WO2019031738A1 - Complex-type electric shock prevention device and portable electronic device having same - Google Patents

Complex-type electric shock prevention device and portable electronic device having same Download PDF

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Publication number
WO2019031738A1
WO2019031738A1 PCT/KR2018/008470 KR2018008470W WO2019031738A1 WO 2019031738 A1 WO2019031738 A1 WO 2019031738A1 KR 2018008470 W KR2018008470 W KR 2018008470W WO 2019031738 A1 WO2019031738 A1 WO 2019031738A1
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WIPO (PCT)
Prior art keywords
varistor
capacitor
electrode
electrodes
barrier layer
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PCT/KR2018/008470
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French (fr)
Korean (ko)
Inventor
최재우
류지황
오성엽
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주식회사 아모텍
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Publication of WO2019031738A1 publication Critical patent/WO2019031738A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105Varistor cores
    • H01C7/108Metal oxide
    • H01C7/112ZnO type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/018Dielectrics
    • H01G4/06Solid dielectrics
    • H01G4/08Inorganic dielectrics
    • H01G4/12Ceramic dielectrics
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/018Dielectrics
    • H01G4/06Solid dielectrics
    • H01G4/08Inorganic dielectrics
    • H01G4/12Ceramic dielectrics
    • H01G4/1209Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1218Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
    • H01G4/1227Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/40Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00Screening of apparatus or components against electric or magnetic fields
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00Screening of apparatus or components against electric or magnetic fields
    • H05K9/0067Devices for protecting against damage from electrostatic discharge

Definitions

  • the present invention relates to an electric shock prevention device for an electronic device such as a smart phone, and more particularly to a hybrid electric shock prevention device capable of realizing a high electrostatic response characteristic and a high capacity, And more particularly, to a portable electronic device equipped with the same.
  • a metal housing used in a portable electronic device has excellent electrical conductivity due to the nature of its material, so that an electrical path can be formed between the external housing and the built-in circuit depending on the particular device or part.
  • the circuit part such as an IC or the like is damaged if a separate circuit protection element is not provided.
  • the leakage current generated by the AC power source is propagated to the metal housing along the ground portion of the circuit part, it may cause an electric shock which may cause injury to the user if the user gives an uncomfortable feeling or a severe case. have.
  • the circuit protection device since the portable electronic device essentially involves a communication function, it is required that the circuit protection device has a capacitance of a high capacity in order to stably process the communication signal without attenuation while the circuit protection device is provided. Particularly, Capacitances of various capacitances may be required depending on the position of the substrate.
  • heterogeneous bonding of a varistor element and a capacitor element has been proposed as a countermeasure for realizing various high capacity capacitances while enhancing the electrostatic resistance for each position where the leakage current is blocked in the portable electronic device and the position where the static electricity is easy to flow.
  • Korean Patent No. 10-1760887 discloses a method of reducing the difference in shrinkage ratio after simultaneous sintering by laminating sheets containing mutual substances in a part of a varistor and a capacitor and performing simultaneous sintering.
  • the varistor contains a material forming a capacitor as in Korean Patent No. 10-1760887, the characteristics of the varistor are rapidly deteriorated.
  • a material forming a varistor is included in the capacitor, the insulation resistance of the capacitor is lowered, It is not suitable for use as a composite device capable of simultaneously passing communication signals and protecting static electricity.
  • the present invention has been made in view of the above-mentioned problems, and it is an object of the present invention to provide a semiconductor device and a manufacturing method thereof, which can prevent material transfer between dissimilar materials to prevent warping or peeling due to heterojunction, An object of the present invention is to provide a composite type electric shock prevention device capable of realizing a high capacity capacitance suitable for communication and a portable electronic device having the same.
  • a method of manufacturing a varistor including a plurality of varistor material layers, at least two first inner electrodes provided in one varistor material layer, and at least one second inner electrode provided in another varistor material layer,
  • a varistor portion comprising;
  • a barrier layer disposed between the varistor part and the capacitor part;
  • a pair of external terminals provided on both sides of the varistor part and the capacitor part and connected to the plurality of capacitor electrodes, the first internal electrode, or the second internal electrode .
  • the varistor portion, the capacitor portion, and the barrier layer are stacked and cofired in a green sheet state, and the barrier layer includes ZrO 3 as a main component, and ZnO is contained for controlling the shrinkage ratio of the capacitor portion and the varistor portion.
  • the barrier layer may block mass transfer between the varistor part and the capacitor part.
  • the insulator may contain 0.5 to 1.5 wt% of ZnO.
  • the barrier layer may further include a metal electrode.
  • the metal electrode may not be connected to the pair of external electrodes.
  • the metal electrode may include a first electrode connected to one of the pair of external electrodes; And a second electrode connected to the other of the pair of external electrodes and spaced apart from the first electrode by a predetermined distance.
  • the first electrode and the second electrode may be arranged vertically or on the same plane.
  • the insulator may include an air gap between the first electrode and the second electrode.
  • the varistor material layer may be formed of ZnO, Zr, Nb, Pr, Bi, Co. Si, Cr, and Mn, and the dielectric sheet layer contains at least one or more oxides of Ti, Si, Sr, Bi, W, and Nd as main components of BaTiO 3 .
  • the capacitor electrode, the first internal electrode, and the second internal electrode may include at least one of Ag, Pd, Pt, Au, Ni, and Cu.
  • the distance between the capacitor electrodes may be 20 ⁇ ⁇ or more.
  • a connector comprising: a conductor including a tip portion protruding outward from a conductive case; Circuitry; And a composite type anti-static device for electrically connecting the conductor and the circuit portion.
  • the electric shock protection device may be preferably an electric shock protection device of various embodiments having the above-described structure and characteristics.
  • the conductor includes a side key, or the leading end may include one end of a connector insertion port for connection with an external device.
  • the barrier layer including the insulator is provided between the varistor portion and the capacitor portion, the material movement between the varistor material layer and the dielectric is blocked during the co-firing process, thereby preventing the deterioration of the electrical characteristics due to the heterojunction So that the reliability of the product can be improved.
  • the barrier layer is formed of a material having a high adhesion affinity between the varistor material layer and the dielectric material, adhesion stability between the varistor material layer and the dielectric material can be ensured, It is possible to reduce the difference in shrinkage ratio and to prevent distortion, peeling, cracking, or the like caused by the heterojunction.
  • the present invention can more effectively block the transfer of material between the varistor material layer and the dielectric, thereby improving the reliability and electrical characteristics of the product.
  • the electrostatic discharge structure is provided in parallel with the varistor portion, the electrostatic discharge characteristic of the varistor portion can be improved by further having the electrostatic discharge structure in the barrier layer.
  • FIG. 1 is a cross-sectional view of a composite-type electric shock-preventing device according to a first embodiment of the present invention
  • FIG. 2 is a cross-sectional view of a composite-type electro-static discharge device according to a second embodiment of the present invention
  • FIG. 3 is a cross-sectional view of a composite-type electric shock-preventing device according to a third embodiment of the present invention.
  • FIG. 4 is a cross-sectional view of a composite-type electric shock-preventing device according to a fourth embodiment of the present invention.
  • FIG. 5 is a cross-sectional view of a composite-type electric shock-preventing device according to a fifth embodiment of the present invention.
  • FIG. 6 is a cross-sectional view of a composite-type electric shock-preventing device according to a sixth embodiment of the present invention.
  • the composite type anti-electrostatic device 100 includes a varistor part 110, a capacitor part 120, a barrier layer 130, and an external terminal 140, .
  • the composite type anti-electrostatic device 100 is formed of a dissimilar material in which the varistor portion 110 and the capacitor portion 120 are different from each other.
  • the varistor portion 110 a high electrostatic response characteristic is realized.
  • the capacitor portion 120 Capacitors can be implemented to smoothly pass communication signals.
  • the varistor portion 110 and the capacitor portion 120 are stacked on each other, and one of them may be stacked on the other.
  • the capacitor portion 120 is disposed on the soldered portion of the circuit board, and the varistor portion 110 is disposed on the capacitor portion 120 on the soldered portion. This is because the element constituting the capacitor section 120 is more reliable than the element constituting the varistor section 110 when the hybrid anti-electrostatic element 100 is mounted on the circuit board through soldering.
  • the hybrid anti-electric device 100 may include a barrier layer 130 between the varistor part 110 and the capacitor part 120.
  • the barrier layer 130 is interposed between the varistor part 110 and the capacitor part 120 in a green sheet state and is formed by simultaneously firing the varistor part 110, the capacitor part 120 and the barrier layer 130, It is possible to realize the composite type electric shock protection device 100. [ If the varistor portion 110 and the capacitor portion 120 are fired simultaneously, the manufacturing process is simplified, and the productivity can be improved.
  • the hybrid anti-shock device 100 includes one varistor portion 110 and one capacitor portion 120.
  • the present invention is not limited thereto, and the varistor portion 110 or the capacitor A plurality of units 120 may be provided.
  • the varistor part 110 at the center and the capacitor part 120 at the upper side and the lower side, respectively, with the barrier layer 130 interposed therebetween.
  • the varistor portion 110 includes a varistor material layer 110a, first internal electrodes 112, 114 and 118, and a second internal electrode 116, and has a luminescence current blocking function and an electrostatic protection function.
  • the varistor material layer 110a includes a varistor material.
  • the varistor material layer 110a may include ZnO, Zn, Nb, Pr, Bi, Co. And oxides of Si, Cr, and Mn.
  • a plurality of varistor material layers 110a are formed. That is, since the first inner electrodes 112, 114 and 118 or the second inner electrodes 116 are provided on one varistor material layer 110a, the arrangement of the first inner electrodes 112, 114 and 118 and the second inner electrodes 116 As shown in FIG.
  • the first internal electrodes 112, 114, and 118 are spaced apart from each other on the same varistor material layer 110a and include at least two or more of them.
  • the first internal electrodes 112 and 114 disposed at both ends are electrically connected to the pair of external electrodes 140, and the first internal electrodes 118 and 118 are also connected to the external electrodes 140, May be formed.
  • the intermediate first internal electrode 118 may be disposed at a position facing a space between at least one second internal electrode 116, which will be described later.
  • the first internal electrodes 112, 114, and 118 may be spaced apart from each other by a predetermined distance.
  • the second internal electrode 116 is provided on at least one varistor material layer 110a different from the first internal electrodes 112, 114, and 118, For example, when there are two first internal electrodes 112 and 114, the second internal electrode 116 is disposed on only one of the first internal electrodes 112 and 114 on the cross section of the composite anti-skid device 100, In the case where the electrodes 112, 114 and 118 are three, the second internal electrode 116 may be disposed on the cross section of the composite anti-skid device 100, one each between the first internal electrodes 112, 114 and 118. At this time, the second internal electrode 116 may be disposed so as not to be electrically connected to the external electrode 140.
  • first internal electrodes 112, 114, and 118 and the second internal electrodes 116 are partially overlapped with each other, but the present invention is not limited thereto.
  • the first internal electrodes 112, 114, and 118 may be disposed without overlapping each other.
  • the distance between the first internal electrodes 112, 114, and 118 may be greater than the distance between the first internal electrodes 112, 114, and 118 and the second internal electrodes 116.
  • the varistor portion 110 may be formed such that the gap between the first internal electrodes 112, 114, and 118 and the second internal electrodes 116 and the particle diameter of the varistor material satisfy the breakdown voltage Vbr.
  • the breakdown voltage Vbr of the varistor unit 110 is applied between the first internal electrode 112 and the second internal electrode 116, between the second internal electrode 116 and the first internal electrode 118, The sum of the unit breakdown voltages between the internal electrode 118 and the second internal electrode 116 and between the second internal electrode 116 and the first internal electrode 114, respectively.
  • the breakdown voltage Vbr of the varistor part 110 may be greater than the rated voltage Vin of the external power source so as to block the leakage current due to the external power source of the portable electronic device to which the hybrid anti- have.
  • the external power source may be a commercial power source.
  • the varistor part 110 can be turned on to pass the static electricity because the voltage of the static electricity is larger than the breakdown voltage Vbr.
  • the breakdown voltage Vbr is larger than the rated voltage of the power supply, so that the leakage current can be cut off.
  • the second internal electrode 116 is shown as being not connected to the external electrode 140, the present invention is not limited thereto.
  • the first internal electrode 112, the second internal electrode 114, The first internal electrode 112 may be connected to one external electrode 140 and the second internal electrode 116 may be connected to the other external electrode 140.
  • the first internal electrodes 112, 114, and 118 may be disposed above and below the second internal electrode 116. That is, the varistor material layer 110a including the varistor material layer 110a having the first internal electrodes 112, 114, and 118 and the second internal electrode 116 may be repeatedly stacked. Accordingly, since a plurality of static electricity paths are provided in parallel, the response characteristic to static electricity can be further improved.
  • the first internal electrodes 112 and 114 and the second internal electrodes 116 may include at least one of Ag, Pd, Pt, Au, Ni, and Cu.
  • Ag may contain at least one of the components listed above and may be alloyed .
  • the capacitor portion 120 includes a dielectric sheet layer 120a and capacitor electrodes 122,
  • the dielectric sheet layer 120a may include at least one or more of Ba, Ti, Si, Sr, Bi, W, and Nd oxides as a main component including BaTiO 3 .
  • the plurality of dielectric sheet layers 120a are formed. That is, since one capacitor electrode 122 and 124 is provided on one dielectric sheet layer 120a, the capacitor electrodes 122 and 124 may be formed in plural numbers according to the arrangement of the capacitor electrodes 122 and 124.
  • the varistor unit 110 which is not easy to implement a large capacitance, can be complemented to easily realize capacitance with various values in a large capacity .
  • the capacitor unit 120 eliminates the influence of the varistor unit 110, so that the interval between the capacitor electrodes 122 and 124 laminated in the inside can be more densely formed, thereby increasing the number of stacked capacitor electrodes 122 and 124 , It is easy to realize a capacitance of a high capacity by using the dielectric sheet layer 120a having high dielectric constant.
  • the capacitor unit 120 can transmit the per-band communication signal corresponding to the communication purpose without attenuation.
  • Capacitor electrodes 122 and 124 may be provided one on each dielectric sheet layer 120a.
  • the capacitor unit 120 may include a plurality of dielectric sheet layers 120a having the capacitor electrodes 122 and 124 sequentially stacked.
  • the dielectric sheet layers 120a each having the capacitor electrodes 122 and the capacitor electrodes 124 at positions symmetrical to each other can be alternately stacked.
  • the capacitor unit 120 may have an insulation breakdown voltage Vcp that is higher than the rated voltage Vin of the external power source. Accordingly, when the leakage current due to the external power source flows into the capacitor unit 110, the capacitor unit 110 can prevent the user from electric shock by blocking the leakage current.
  • the distance between the capacitor electrodes 122 and 124 may be 20 ⁇ ⁇ or more. As described above, by sufficiently ensuring the interval between the capacitor electrodes 122 and 124, the capacitance suitable for wireless communication can be realized and the dielectric breakdown voltage Vcp for blocking the leakage current can be increased.
  • the capacitor electrodes 122 and 124 may include at least one of Ag, Pd, Pt, Ni, Au, and Cu.
  • the capacitor electrodes 122 and 124 may be alloyed by containing at least one of the above-listed components in the Ag since ESD resistance may deteriorate when Ag alone is used.
  • the varistor portion 110 and the capacitor portion 120 may have substantially the same thickness, but the present invention is not limited thereto.
  • the varistor portion 110 and the capacitor portion 120 may have different thicknesses depending on the application.
  • the sum of the thicknesses of the varistor part 110 and the capacitor part 120 is set so as to satisfy the specification of the composite anti-skid device 100.
  • the varistor portion 110 and the capacitor portion 120 are each 0.3 mm or less in total thickness of the composite anti-skid device 100 It may be provided in a thickness of 1/3 to 2/3 times.
  • the barrier layer 130 is disposed between the varistor portion 110 and the capacitor portion 120.
  • the barrier layer 130 may include a varistor material layer 110a and a dielectric sheet layer 120a constituting the varistor part 110 and the capacitor part 120 when the varistor part 110 and the capacitor part 120 are simultaneously fired. To prevent each of the materials constituting the layer from moving to another layer during the co-firing process.
  • the barrier layer 130 is made of ZrO 3 as a main component and an insulator containing a relatively small amount of ZnO as compared with ZrO 3 for controlling the shrinkage ratio after firing of the varistor part 110 and the capacitor part 120 .
  • the barrier layer 130 may contain 0.5 to 1.5 wt% of ZnO. That is, the barrier layer 130 may have a composition of ZrO 3 and ZnO of about 9: 1.
  • the material flow between the varistor part 110 and the capacitor part 120 can be suppressed by the barrier layer 130 so that the material of the capacitor part 120 can be prevented from being mixed with the material of the varistor part 110 It is possible to suppress the mixing of the varistor material and warping phenomena due to the difference in shrinkage ratio occurring in the simultaneous firing process of different materials. Therefore, it is possible to provide sufficient ESD characteristic inherent to the varistor, The communication signal can be passed smoothly.
  • the barrier layer 130 is formed of an insulator to completely isolate the varistor portion 110 and the capacitor portion 120 from each other to electrically isolate the characteristics of the varistor portion 110 and the capacitor portion 120 from each other. Therefore, the respective electrostatic protection functions and the communication signal passing function are not interfered with each other, and deterioration of the characteristics of the element parts can be suppressed.
  • the barrier layer 130 contains ZnO similar to the materials of the varistor part 110 and the capacitor part 120, the adhesion affinity to the varistor part 110 and the capacitor part 120 is high, It is possible to stably secure the coupling property between the varistor part 110 and the capacitor part 120 when co-firing.
  • the proportion of ZnO contained in the barrier layer 130 can be adjusted according to the shrinkage ratio due to the physical properties of the varistor portion 110 and the capacitor portion 120.
  • the barrier layer 130 has a function of joining the varistor portion 110 and the capacitor portion 120, and a function of electrically and thermally separating the varistor portion 110 and the capacitor portion 120 to prevent deterioration of characteristics .
  • the external terminal 140 is provided on both sides of the varistor part 110 and the capacitor part 120 and is connected to the plurality of capacitor electrodes 122 and 124 and the first internal electrodes 112, 114 and 118 or the second internal electrodes 116, It is made up of a pair.
  • the external terminal 140 is an electrode for electrically connecting the varistor part 110 and the capacitor part 120 in parallel and soldering the composite anti-static device 100 to the circuit board, Shape.
  • the varistor portion 110 and the capacitor portion 120 selectively operate with respect to the static electricity, the leakage current of the external power supply, and the communication signal, so that the hybrid type anti-electric device 100 can be protected against static electricity, Transfer function can be performed.
  • the external terminal 140 may include Ag and glass.
  • the external terminal 140 may include Ag and glass.
  • the external terminal 140 may have a minimum adjacent distance between the first internal electrode 112, 114, and 118 or the second internal electrode 116 that is not connected to the external terminal 140, As a result, it is possible to prevent a signal, such as static electricity, traveling between the first internal electrodes 112, 114, and 118 and the second internal electrodes 116 from being changed in the path to the external terminal 140, as described above.
  • the external terminal 140 may have a minimum adjacent distance with the capacitor electrodes 122 and 124 not connected to the external terminal 140 of 20 m or more. That is, the distance between one capacitor electrode 122 and the external terminal 140 connected to the other capacitor electrode 124 may be 20 ⁇ m or more.
  • the external terminal 140 may further be plated with Ni / Sn or Ni / Au to improve the bonding property with the outside of the circuit board and the like and electrical characteristics.
  • the metal electrode 232 may be disposed in the barrier layer 230.
  • the hybrid anti-electrostatic device 200 may further include a single-layer metal electrode 232 in the barrier layer 230.
  • the barrier layer 230 may include a plurality of insulating layers.
  • the metal electrode 232 is provided on one insulating layer, another insulating layer may be provided on the upper side of the metal electrode 232. That is, the barrier layer 130 may include a plurality of insulating layers depending on the number of stacked metal electrodes 232.
  • the firing temperature of the metal is lower than that of the insulators of the varistor part 110, the capacitor part 120 and the barrier layer 230, the metal electrode 232 is sintered earlier than the firing step, And the material of the capacitor unit 120 can be further suppressed.
  • the metal electrode 232 is provided to have an area approximate to the junction area between the varistor part 110 and the capacitor part 120 in order to minimize the mass transfer between the varistor part 110 and the capacitor part 120 . And may preferably be formed to have an area smaller than the bonding area.
  • the metal electrode 232 may not be connected to the varistor portion 110 and the pair of external electrodes 140 disposed on both sides of the capacitor portion 120. That is, when both ends of the metal electrode 232 are electrically connected to the external electrode 140, the composite type anti-skid device 100 is short-circuited. To prevent this, the metal electrode 232 is connected to the external electrode 140, respectively.
  • both ends of the metal electrode 232 may be disposed so as to be separated from the outer electrode 140 by 20 ⁇ ⁇ or more.
  • the electrode layer having a relatively lower firing temperature than the varistor portion 110 and the capacitor portion 120 is provided in the barrier layer 230 as described above, the material movement between the varistor portion 110 and the capacitor portion 120 can be effectively Can be blocked.
  • the electrode layer includes a glass having a low firing temperature
  • the firing temperature of the glass is lower than that of the varistor portion 110 and the capacitor portion 120, so that the glass can be firstly sintered to suppress the movement of the material at high temperature.
  • two layers of first and second metal electrodes 332 and 334 may be disposed in the barrier layer 330.
  • the hybrid anti-electrostatic device 300 may include first and second metal electrodes 332 and 334 in a double layer in a barrier layer 330.
  • the first and second metal electrodes 332 and 334 are electrically connected to the varistor part 110 or the capacitor part 120 even if the material of the varistor part 110 or the capacitor part 120 moves through one metal electrode. By suppressing the movement, mass transfer between the varistor portion 110 and the capacitor portion 120 can be further suppressed.
  • first and second metal electrodes 332 and 334 may be connected to the external electrode 140 in a state where the first and second metal electrodes 332 and 334 partially overlap each other in the vertical direction. That is to say, since one end of the first metal electrode 332 and one end of the second metal electrode 224 are connected to the outer electrode 140, the gap between the varistor portion 110 and the capacitor portion 120 It is possible to suppress the movement of the material over a wider area than the single-layer metal electrode 232 of FIG.
  • first and second metal electrodes 332 and 334 are disposed in a double layer, it is not necessary to dispose the first and second metal electrodes 332 and 334 and the outer electrode 140 apart from each other to prevent short- The degree of freedom can be improved.
  • the first metal electrode 332 may be connected to one of the outer electrodes 140 and the second metal electrode 334 may be connected to the other outer electrode 140. At this time, the first and second metal electrodes 332 and 334 may be spaced apart from each other by a predetermined distance so as not to be short-circuited. At this time, since the barrier layer 330 is an insulator, it may not be electrically short-circuited.
  • the floating metal electrodes 336 and 338 may be provided between the first and second metal electrodes 332 and 334 of the double layer.
  • the hybrid anti-electric device 300 includes floating metal electrodes 336 and 338 spaced apart from each other by a predetermined distance between the first and second metal electrodes 332 and 334 in the blocking layer 330' As shown in FIG.
  • the vertical distance between the metal electrodes 332, 334, 336, and 338 is increased by the number of the floating metal electrodes 336.338 because the breakdown voltage between the outer electrodes 140 against the metal electrodes provided in the blocking layer 330 ' It is possible to arrange them close to each other, thereby suppressing an increase in volume caused by the blocking layer 330 '.
  • first and second metal electrodes 332 and 334 and the floating metal electrodes 336 and 338 may be spaced apart from each other by a predetermined distance in the horizontal direction and the vertical direction, and may be partially overlapped in the vertical direction.
  • an air gap 436 may be provided between the first and second metal electrodes 432 and 434.
  • the hybrid anti-electrostatic device 400 may include first and second metal electrodes 432 and 434 and an air gap 436 in the barrier layer 430.
  • first and second metal electrodes 432 and 434 may be disposed on the same plane and connected to the external electrode 140, respectively. That is, the first and second metal electrodes 432 and 434 may be horizontally spaced apart from each other. An air gap 436 may be disposed between the first and second metal electrodes 432 and 434.
  • the first and second metal electrodes 432 and 434 are provided as a single layer, and movement of the material over a wider area than that of the metal electrode 232 of FIG. 2 can be suppressed. That is, since the first and second metal electrodes 432 and 434 are connected to the respective outer electrodes 140 and the material can not move through the air gap 436, the metal electrode 232 and the outer electrode 140, so that the movement of the substance can be further suppressed.
  • the composite anti-electrostatic device 400 may include a suppressor in parallel with the varistor portion 110.
  • the varistor unit 110 which operates quickly, first clamps the voltage of the ESD to perform the electrostatic protection operation.
  • the ESD can be further discharged by the first and second metal electrodes 432 and 434, thereby allowing the ESD protection device to further enhance the electrostatic protection characteristics of the protection device.
  • first and second metal electrodes 532 and 534 may be vertically spaced from each other in the composite type anti-skid device 500 according to the sixth embodiment of the present invention.
  • the hybrid anti-static device 500 may include first and second metal electrodes 532 and 534 and an air gap 536 in the barrier layer 530.
  • first and second metal electrodes 532 and 534 may be vertically spaced apart and connected to the external electrode 140, respectively. At this time, the first and second metal electrodes 532 and 534 may be partially overlapped. In addition, an air gap 536 may be disposed between the first and second metal electrodes 532 and 534.
  • the first and second metal electrodes 532 and 534 are provided in two layers and the overlapped portion is minimized compared to the metal electrodes 332 and 334 of FIG. 3, the amount of the applied metal electrode is reduced, 110 and the capacitor unit 120 can be suppressed.
  • the composite anti-static device 500 may include a suppressor in parallel with the varistor portion 110.
  • the varistor unit 110 which operates quickly, first clamps the voltage of the ESD to perform the electrostatic protection operation.
  • the electrostatic protection characteristic of the protection device can be further improved by passing high energy through the electrostatic discharge (ESD) by the supercrelector.
  • Such a composite type of anti-electrostatic device (100, 200, 300, 300 ', 400, 500) may be arranged to electrically connect a conductor such as an external metal case and a circuit part in a portable electronic device.
  • the hybrid type anti-electrostatic devices 100, 200, 300, 300 ', 400, and 500 are directly connected to the ground of the circuit part so that the static electricity introduced by turning on the varistor part 110 can be bypassed to the ground without transmitting to the circuit part.
  • hybrid anti-electrostatic elements 100, 200, 300, 300 ', 400, 500 are not directly connected to the ground of the circuitry, that is, they only electrically connect the conductor and circuitry to pass static electricity. It is possible to provide a separate protection element for bypassing the memory cell. Such a protection element may be a single element, a suppressor or a varistor.
  • the composite type anti-electric devices 100, 200, 300, 300 ', 400, and 500 can pass the static electricity by turning on the varistor part 110. That is, since the breakdown voltage (Vbr) of the composite-type electric-shock-resistant devices 100, 200, 300, 300 ', 400, 500 is smaller than the instantaneous voltage of the static electricity, the electric- As a result, when the static electricity is introduced from an external conductor of an electronic device such as a metal case, the electric shock resistance of the composite type electric shock protection device 100, 200, 300, 300 ', 400 or 500 is lowered so that static electricity passes therethrough. The conductor and the circuit portion can be kept open.
  • the dielectric breakdown voltage Vcp of the capacitor part 120 provided in the hybrid type anti-electric devices 100, 200, 300, 300 ', 400 and 500 is larger than the breakdown voltage Vbr of the varistor part 110, 120, but can only pass through the varistor portion 110.
  • the composite type anti-electrostatic devices 100, 200, 300, 300 ', 400 and 500 transmit the leakage current to the conductor by the turn-off of the varistor part 110 and the capacitor part 120 .
  • the composite type anti-skid devices 100, 200, 300, 300 ', 400 and 500 are arranged such that the breakdown voltage Vbr thereof is the overvoltage It can be kept open.
  • the composite type anti-electrostatic elements 100, 200, 300, 300 ', 400, and 500 are maintained in an open state without being electrically conducted because the breakdown voltage Vbr thereof is larger than the rated voltage of the external power source of the portable electronic device, It is possible to prevent the leakage current from being transmitted to the contactable conductor.
  • the capacitor unit 120 provided in the hybrid type anti-electrostatic devices 100, 200, 300, 300 ', 400, and 500 can block the DC component included in the leakage current, and the AC component of the leakage current is relatively low Frequency, it is possible to block the leakage current by acting with a large impedance with respect to the frequency.
  • the hybrid type anti-electrostatic devices 100, 200, 300, 300 ', 400, and 500 can shield the user from the electric shock by blocking the leakage current due to the external power source flowing from the ground of the circuit part.
  • the composite type electric shock protection device 100, 200, 300, 300 ', 400, 500 may allow a communication signal flowing through the conductor to pass by the capacitor part 120.
  • the varistors 110 and 210 are turned off, so that the hybrid anti-skid devices 100, 200, 300, 300 ', 400 and 500 can function as a capacitor.
  • the comb-type anti-electric devices 100, 200, 300, 300 ', 400, and 500 may keep the varistors 110 and 210 open to shut off the conductor and the circuit, but pass the communication signal through the capacitor 120.
  • the capacitor portion 120 of the hybrid type anti-electrostatic devices 100, 200, 300, 300 ', 400, and 500 can provide the inflow path of the communication signal.
  • the portable electronic device may be in the form of a portable electronic device that is portable and portable.
  • the portable electronic device may be a portable terminal such as a smart phone, a cellular phone, and the like, and may be a smart watch, a digital camera, a DMB terminal, an electronic book, a netbook, a tablet PC,
  • Such electronic devices may comprise any suitable electronic components including antenna structures for communication with external devices.
  • it may be a device using local area network communication such as WiFi and Bluetooth.
  • Such a portable electronic device includes an outer housing made of conductive materials such as metal (aluminum, stainless steel, etc.) or carbon-fiber synthetic material or other fiber-based composites, glass, ceramic, plastic and combinations thereof .
  • conductive materials such as metal (aluminum, stainless steel, etc.) or carbon-fiber synthetic material or other fiber-based composites, glass, ceramic, plastic and combinations thereof .
  • the housing of the portable electronic device may include a conductor made of metal and exposed to the outside.
  • the conductor may include at least one of an antenna for communication between the electronic device and the external device, a metal case, and conductive ornaments.
  • the metal case may be provided to partially surround or partially surround the side of the housing of the portable electronic device.
  • the metal case may be provided to surround the camera, which is exposed to the outside on the front surface or the rear surface of the housing of the electronic device.
  • the hybrid anti-shock devices 100, 200, 300, 300 ', 400, and 500 may be suitably provided in accordance with the number of metal cases provided in the housing of the portable electronic device. However, when a plurality of metal cases are provided, each of the metal cases may be embedded in the housing of the portable electronic device so that the combined type anti-electrostatic devices 100, 200, 300, 300 ', 400, and 500 are individually connected.
  • the hybrid type anti-electrostatic devices 100, 200, 300, 300 ', 400, and 500 may be used to connect a metal case to a circuit board or to provide a matching circuit (for example, R and L components) between a metal case and an FFM Or between the metal case with the antenna and the IC implementing the communication function through the antenna, or may be disposed between the short pin of the PIFA (Planar Inverted F Antenna) antenna and the matching circuit .
  • a matching circuit for example, R and L components
  • the conductor may include a tip portion protruding outward from the conductive case.
  • the conductor may include a side key.
  • the distal end portion may include one end of a connector insertion port into which a connector, for example, an earphone, a charging cable, a data cable, or the like, is inserted.
  • the composite type electric shock protection devices 100, 200, 300, 300 ', 400 and 500 according to the embodiment of the present invention, A high response characteristic and a high capacity capacitance can be realized at the same time.

Abstract

A complex-type electric shock prevention device and a portable electronic device having the same are provided. The complex-type electric shock prevention device, according to one embodiment of the present invention, comprises: a varistor unit including a plurality of varistor material layers, at least two first inner electrodes provided in any one varistor material layer, and at least one second inner electrode provided in another one varistor material layer; a capacitor unit including a plurality of dielectric sheet layers, and a plurality of capacitor electrodes provided on the respective dielectric sheet layers; a blocking layer arranged between the varistor unit and the capacitor unit; and a pair of external terminals provided on both sides of the varistor unit and the capacitor unit so as to be connected to the plurality of capacitor electrodes, the first inner electrodes, or the second inner electrode, wherein the varistor unit, the capacitor unit, and the blocking layer are stacked in a green sheet state so as to be simultaneously sintered, and the blocking layer has ZrO3 as a main component thereof and can be an insulator containing ZnO for the contraction rate control of the capacitor unit and the varistor unit.

Description

복합형 감전방지소자 및 이를 구비한 휴대용 전자장치Hybrid type electric shock prevention device and portable electronic device having the same
본 발명은 스마트폰 등과 같은 전자장치용 감전방지소자에 관한 것으로, 더욱 상세하게는 높은 정전기 응답 특성과 고용량 커패시턴스의 구현이 가능한 동시에 이종재료간 접합 안전성을 확보할 수 있는 복합형 감전방지소자 및 이를 구비한 휴대용 전자장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an electric shock prevention device for an electronic device such as a smart phone, and more particularly to a hybrid electric shock prevention device capable of realizing a high electrostatic response characteristic and a high capacity, And more particularly, to a portable electronic device equipped with the same.
최근 휴대용 전자장치에 채용되는 메탈 재질의 하우징은 재질의 특성상 전기전도도가 우수하기 때문에, 특정 소자를 통하여 또는 부위에 따라 외장 하우징과 내장 회로부 사이에 전기적 경로가 형성될 수 있다. BACKGROUND ART [0002] In recent years, a metal housing used in a portable electronic device has excellent electrical conductivity due to the nature of its material, so that an electrical path can be formed between the external housing and the built-in circuit depending on the particular device or part.
특히, 외부의 노출면적이 큰 메탈 하우징과 같은 전도체를 통하여 순간적으로 높은 전압을 갖는 정전기가 유입되는 경우, 별도의 회로보호소자를 구비하지 않으면 IC 등의 회로부를 파손시킨다. 또한, AC 전원에 의해 발생되는 누설전류가 회로부의 접지부를 따라 메탈 하우징으로 전파되면, 사용자에게 불쾌감을 주거나 심한 경우, 사용자에게 상해를 입힐 수 있는 감전 사고를 초래하기 때문에, 이에 대한 대책이 요구되고 있다. Particularly, when a static electricity having a high voltage instantly flows through a conductor such as a metal housing having a large exposed surface area, the circuit part such as an IC or the like is damaged if a separate circuit protection element is not provided. In addition, if the leakage current generated by the AC power source is propagated to the metal housing along the ground portion of the circuit part, it may cause an electric shock which may cause injury to the user if the user gives an uncomfortable feeling or a severe case. have.
더욱이, 정전기의 경우, 그 특성상 평면보다는 뾰족한 형상의 첨단부로 더 잘 유입되기 때문에, 이러한 부분에는 정전기의 내성을 더 강화시킬 수 있는 보호소자가 요구되고 있다. Moreover, in the case of static electricity, since it flows into the tip portion of a pointed shape rather than the flat surface due to its characteristics, there is a need for such a portion to have a protective device capable of further enhancing the immunity of static electricity.
한편, 휴대용 전자장치는 통신 기능을 필수적으로 수반하기 때문에 회로보호소자를 구비하면서도 통신신호를 감쇄 없이 안정적으로 처리하기 위해서는 회로보호소자가 고용량의 커패시턴스를 가질 것이 요구되며, 특히, 회로보호소자가 설치되는 회로기판의 위치에 따라 다양한 용량의 커패시턴스가 요구될 수 있다. On the other hand, since the portable electronic device essentially involves a communication function, it is required that the circuit protection device has a capacitance of a high capacity in order to stably process the communication signal without attenuation while the circuit protection device is provided. Particularly, Capacitances of various capacitances may be required depending on the position of the substrate.
이러한 실정에서, 휴대용 전자장치에서 누설전류를 차단하면서도 정전기 유입이 용이한 위치별로 정전기 내성을 강화시키는 동시에 다양한 고용량 커패시턴스를 구현하기 위한 대책으로서, 바리스터 소자와 커패시터 소자의 이종 접합이 제안되고 있다.In such a situation, heterogeneous bonding of a varistor element and a capacitor element has been proposed as a countermeasure for realizing various high capacity capacitances while enhancing the electrostatic resistance for each position where the leakage current is blocked in the portable electronic device and the position where the static electricity is easy to flow.
한국등록특허 10-1760887호에서는 바리스터와 커패시터의 일부에 상호간의 물질이 함유된 시트를 적층하여 동시 소결함으로써 동시 소결후 수축률 차이를 감소시키는 방안이 개시되어 있다. Korean Patent No. 10-1760887 discloses a method of reducing the difference in shrinkage ratio after simultaneous sintering by laminating sheets containing mutual substances in a part of a varistor and a capacitor and performing simultaneous sintering.
그러나 한국등록특허 10-1760887호에서와 같이 바리스터에 커패시터를 이루는 물질이 함유되면, 바리스터의 특성이 급격하게 열화되고, 반대로 커패시터에 바리스터를 이루는 물질이 함유되면, 커패시터의 절연 저항이 낮아지기 때문에 내압이 작아지고, 온도특성이 악화되는 등 신뢰성이 떨어지기 때문에, 통신 신호 통과와 정전기 보호를 동시에 수행할 수 있는 복합소자로 사용하는데 적합하지 않다.However, when the varistor contains a material forming a capacitor as in Korean Patent No. 10-1760887, the characteristics of the varistor are rapidly deteriorated. On the contrary, when a material forming a varistor is included in the capacitor, the insulation resistance of the capacitor is lowered, It is not suitable for use as a composite device capable of simultaneously passing communication signals and protecting static electricity.
본 발명은 상기와 같은 점을 감안하여 안출한 것으로, 이종 재료 상호간의 물질이동을 차단시킴으로써, 이종 접합에 의한 뒤틀림이나 박리를 방지하면서도 반복적인 사용에도 신뢰성이 높고, 정전기 응답특성이 양호하며, 무선 통신에 적합한 고용량 커패시턴스를 구현할 수 있는 복합형 감전방지소자 및 이를 구비한 휴대용 전자장치를 제공하는데 그 목적이 있다.Disclosure of the Invention The present invention has been made in view of the above-mentioned problems, and it is an object of the present invention to provide a semiconductor device and a manufacturing method thereof, which can prevent material transfer between dissimilar materials to prevent warping or peeling due to heterojunction, An object of the present invention is to provide a composite type electric shock prevention device capable of realizing a high capacity capacitance suitable for communication and a portable electronic device having the same.
상술한 과제를 해결하기 위하여 본 발명은 복수 개의 바리스터 물질층, 어느 하나의 바리스터 물질층에 구비된 적어도 두 개의 제1내부전극 및 다른 하나의 바리스터 물질층에 구비된 적어도 하나의 제2내부전극을 포함하는 바리스터부; 복수 개의 유전체 시트층 및 상기 각 유전체 시트층 상에 구비되는 복수 개의 커패시터 전극을 포함하는 커패시터부; 상기 바리스터부와 상기 커패시터부 사이에 배치되는 차단층; 및 상기 바리스터부와 상기 커패시터부의 양측에 구비되어 상기 복수 개의 커패시터 전극, 상기 제1내부전극, 또는 상기 제2내부전극에 연결되는 한 쌍의 외부단자;를 포함하는 복합형 감전방지소자를 제공한다. 여기서, 상기 바리스터부, 상기 커패시터부 및 상기 차단층은 그린 시트 상태로 적층되어 동시 소성되며, 상기 차단층은 ZrO3을 주성분으로 하고, 상기 커패시터부 및 상기 바리스터부의 수축률 제어를 위해 ZnO가 함유되는 절연체일 수 있다. According to an aspect of the present invention, there is provided a method of manufacturing a varistor including a plurality of varistor material layers, at least two first inner electrodes provided in one varistor material layer, and at least one second inner electrode provided in another varistor material layer, A varistor portion comprising; A capacitor portion including a plurality of dielectric sheet layers and a plurality of capacitor electrodes provided on the dielectric sheet layers; A barrier layer disposed between the varistor part and the capacitor part; And a pair of external terminals provided on both sides of the varistor part and the capacitor part and connected to the plurality of capacitor electrodes, the first internal electrode, or the second internal electrode . Here, the varistor portion, the capacitor portion, and the barrier layer are stacked and cofired in a green sheet state, and the barrier layer includes ZrO 3 as a main component, and ZnO is contained for controlling the shrinkage ratio of the capacitor portion and the varistor portion. Lt; / RTI >
본 발명의 바람직한 실시예에 의하면, 상기 차단층은 상기 바리스터부와 상기 커패시터부 사이의 물질이동을 차단할 수 있다.According to a preferred embodiment of the present invention, the barrier layer may block mass transfer between the varistor part and the capacitor part.
또한, 상기 절연체는 ZnO이 0.5~1.5 wt% 함유할 수 있다.The insulator may contain 0.5 to 1.5 wt% of ZnO.
또한, 상기 차단층은 금속전극을 더 포함할 수 있다.The barrier layer may further include a metal electrode.
이때, 상기 금속전극은 상기 한 쌍의 외부전극과 연결되지 않을 수 있다. At this time, the metal electrode may not be connected to the pair of external electrodes.
아울러, 상기 금속전극은, 상기 한 쌍의 외부전극 중 어느 하나에 연결되는 제1전극; 및 상기 한 쌍의 외부전극 중 다른 하나에 연결되며 상기 제1전극과 일정간격 이격되어 배치되는 제2전극을 포함할 수 있다.The metal electrode may include a first electrode connected to one of the pair of external electrodes; And a second electrode connected to the other of the pair of external electrodes and spaced apart from the first electrode by a predetermined distance.
이때, 상기 제1전극 및 상기 제2전극은 수직으로 배치되거나 동일 평면 상에 배치될 수 있다.At this time, the first electrode and the second electrode may be arranged vertically or on the same plane.
이때, 상기 절연체는 상기 제1전극과 상기 제2전극 사이에 에어갭을 포함할 수 있다.At this time, the insulator may include an air gap between the first electrode and the second electrode.
또한, 상기 바리스터 물질층은 ZnO를 주성분으로 Zr, Nb, Pr, Bi, Co. Si, Cr, 및 Mn의 산화물 중 적어도 1종 이상을 포함하고, 상기 유전체 시트층은 BaTiO3을 주성분으로, Ti, Si, Sr, Bi, W, 및 Nd의 산화물 중 적어도 1종 이상을 포함할 수 있다.The varistor material layer may be formed of ZnO, Zr, Nb, Pr, Bi, Co. Si, Cr, and Mn, and the dielectric sheet layer contains at least one or more oxides of Ti, Si, Sr, Bi, W, and Nd as main components of BaTiO 3 .
또한, 상기 커패시터 전극, 상기 제1내부전극, 및 상기 제2내부전극은 Ag, Pd, Pt, Au, Ni, 및 Cu 중 적어도 1종 이상을 포함할 수 있다.The capacitor electrode, the first internal electrode, and the second internal electrode may include at least one of Ag, Pd, Pt, Au, Ni, and Cu.
또한, 상기 커패시터 전극 사이의 거리는 20㎛ 이상일 수 있다. Further, the distance between the capacitor electrodes may be 20 占 퐉 or more.
한편, 본 발명은 도전성 케이스에서 외측으로 돌출 형성되는 첨단부를 포함하는 전도체; 회로부; 및 상기 전도체와 회로부를 전기적으로 연결하는 복합형 감전방지소자를 포함하는 휴대용 전자장치를 제공한다. 여기서, 상기 전기적 충격 보호소자는, 상술한 바와 같은 구조 및 특성을 갖는 다양한 실시예의 전기적 충격 보호소자가 바람직하게 이용될 수 있다.According to another aspect of the present invention, there is provided a connector comprising: a conductor including a tip portion protruding outward from a conductive case; Circuitry; And a composite type anti-static device for electrically connecting the conductor and the circuit portion. Here, the electric shock protection device may be preferably an electric shock protection device of various embodiments having the above-described structure and characteristics.
본 발명의 바람직한 실시예에 의하면, 상기 전도체는 사이드 키를 포함하거나, 상기 첨단부는 외부 기기와 연결을 위한 커넥터의 삽입구의 일단을 포함할 수 있다.According to a preferred embodiment of the present invention, the conductor includes a side key, or the leading end may include one end of a connector insertion port for connection with an external device.
본 발명에 의하면, 바리스터부와 커패시터부 사이에 절연체를 포함하는 차단층을 구비함으로써, 동시소성을 하는 과정 중에 바리스터 물질층과 유전체 사이의 물질이동을 차단하여 이종접합에 의한 전기적 특성의 열화를 방지하여 제품의 신뢰성을 향상시킬 수 있다. According to the present invention, since the barrier layer including the insulator is provided between the varistor portion and the capacitor portion, the material movement between the varistor material layer and the dielectric is blocked during the co-firing process, thereby preventing the deterioration of the electrical characteristics due to the heterojunction So that the reliability of the product can be improved.
또한, 본 발명은 바리스터 물질층과 유전체와의 접착 친화도가 높은 물질로 차단층을 구현함으로써, 바리스터 물질층과 유전체 사이의 접착 안정성을 확보할 수 있으므로, 동시소성 후 바리스터 물질층과 유전체 사이의 수축률의 차이를 감소시키고 이종 접합에 의한 뒤틀림이나 박리, 또는 크랙 등을 방지할 수 있다. In addition, since the barrier layer is formed of a material having a high adhesion affinity between the varistor material layer and the dielectric material, adhesion stability between the varistor material layer and the dielectric material can be ensured, It is possible to reduce the difference in shrinkage ratio and to prevent distortion, peeling, cracking, or the like caused by the heterojunction.
또한, 본 발명은 차단층에 금속전극을 포함함으로써, 바리스터 물질층과 유전체 사이의 물질이동을 더욱 효과적으로 차단하여 제품의 신뢰성과 전기적 특성을 향상시킬 수 있다.In addition, by including a metal electrode in the barrier layer, the present invention can more effectively block the transfer of material between the varistor material layer and the dielectric, thereby improving the reliability and electrical characteristics of the product.
또한, 본 발명은 차단층 내에 별도의 정전기 방전 구조를 구비함으로써, 이 정전기 방전 구조가 바리스터부와 병렬로 연결되어 바리스터부의 정전기 특성을 보완하므로 정전기 특성을 더욱 향상시킬 수 있다. Further, since the electrostatic discharge structure is provided in parallel with the varistor portion, the electrostatic discharge characteristic of the varistor portion can be improved by further having the electrostatic discharge structure in the barrier layer.
도 1은 본 발명의 제1실시예에 따른 복합형 감전방지소자의 단면도, 1 is a cross-sectional view of a composite-type electric shock-preventing device according to a first embodiment of the present invention,
도 2는 본 발명의 제2실시예에 따른 복합형 감전방지소자의 단면도, 2 is a cross-sectional view of a composite-type electro-static discharge device according to a second embodiment of the present invention,
도 3은 본 발명의 제3실시예에 따른 복합형 감전방지소자의 단면도, 3 is a cross-sectional view of a composite-type electric shock-preventing device according to a third embodiment of the present invention,
도 4는 본 발명의 제4실시예에 따른 복합형 감전방지소자의 단면도, 4 is a cross-sectional view of a composite-type electric shock-preventing device according to a fourth embodiment of the present invention,
도 5는 본 발명의 제5실시예에 따른 복합형 감전방지소자의 단면도, 그리고,5 is a cross-sectional view of a composite-type electric shock-preventing device according to a fifth embodiment of the present invention,
도 6은 본 발명의 제6실시예에 따른 복합형 감전방지소자의 단면도이다. 6 is a cross-sectional view of a composite-type electric shock-preventing device according to a sixth embodiment of the present invention.
이하, 첨부한 도면을 참고로 하여 본 발명의 실시예에 대하여 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자가 용이하게 실시할 수 있도록 상세히 설명한다. 본 발명은 여러 가지 상이한 형태로 구현될 수 있으며 여기에서 설명하는 실시예에 한정되지 않는다. 도면에서 본 발명을 명확하게 설명하기 위해서 설명과 관계없는 부분은 생략하였으며, 명세서 전체를 통하여 동일 또는 유사한 구성요소에 대해서는 동일한 참조부호를 부가한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings, which will be readily apparent to those skilled in the art to which the present invention pertains. The present invention may be embodied in many different forms and is not limited to the embodiments described herein. In order to clearly illustrate the present invention, parts not related to the description are omitted, and the same reference numerals are assigned to the same or similar components throughout the specification.
본 발명의 제1실시예에 따른 복합형 감전방지소자(100)는 도 1에 도시된 바와 같이, 바리스터부(110), 커패시터부(120), 차단층(130), 및 외부단자(140)를 포함한다. 1, the composite type anti-electrostatic device 100 according to the first embodiment of the present invention includes a varistor part 110, a capacitor part 120, a barrier layer 130, and an external terminal 140, .
상기 복합형 감전방지소자(100)는 바리스터부(110)와 커패시터부(120)가 서로 상이한 이종재료로 구성된 것으로 바리스터부(110)에서는 높은 정전기 응답특성이 구현되고, 커패시터부(120)에서는 고용량 커패시터가 구현되어 통신신호를 원활하게 통과시킬 수 있다.The composite type anti-electrostatic device 100 is formed of a dissimilar material in which the varistor portion 110 and the capacitor portion 120 are different from each other. In the varistor portion 110, a high electrostatic response characteristic is realized. In the capacitor portion 120, Capacitors can be implemented to smoothly pass communication signals.
여기서, 바리스터부(110) 및 커패시터부(120)는 서로 적층되는 구조로서, 어느 하나가 다른 하나의 상부에 적층될 수 있다. 본 실시예에 따르면, 회로기판에 솔더링되는 부분에 커패시터부(120)가 배치되고, 그 상측에 바리스터부(110)가 적층 배치되는 것이 좋다. 이는 회로기판에 솔더링을 통해 복합형 감전방지소자(100)를 실장할 때, 커패시터부(120)를 구성하고 있는 소체가 바리스터부(110)를 구성하는 소체에 비해 신뢰성이 우수하기 때문이다.Here, the varistor portion 110 and the capacitor portion 120 are stacked on each other, and one of them may be stacked on the other. According to the present embodiment, it is preferable that the capacitor portion 120 is disposed on the soldered portion of the circuit board, and the varistor portion 110 is disposed on the capacitor portion 120 on the soldered portion. This is because the element constituting the capacitor section 120 is more reliable than the element constituting the varistor section 110 when the hybrid anti-electrostatic element 100 is mounted on the circuit board through soldering.
이때, 복합형 감전방지소자(100)는 바리스터부(110)와 커패시터부(120) 사이에 차단층(130)을 포함할 수 있다. 차단층(130)은 그린 시트 상태에서 바리스터부(110)와 커패시터부(120) 사이에 개재되는 것으로, 바리스터부(110)와 커패시터부(120) 및 차단층(130)을 동시소성하여 원칩화된 복합형 감전방지소자(100)를 구현할 수 있다. 이와 같이, 바리스터부(110)와 커패시터부(120)를 동시 소성하면, 제조공정이 단순화되므로 생산성이 향상될 수 있다.At this time, the hybrid anti-electric device 100 may include a barrier layer 130 between the varistor part 110 and the capacitor part 120. The barrier layer 130 is interposed between the varistor part 110 and the capacitor part 120 in a green sheet state and is formed by simultaneously firing the varistor part 110, the capacitor part 120 and the barrier layer 130, It is possible to realize the composite type electric shock protection device 100. [ If the varistor portion 110 and the capacitor portion 120 are fired simultaneously, the manufacturing process is simplified, and the productivity can be improved.
아울러, 도 1에는 복합형 감전방지소자(100)가 하나의 바리스터부(110)와 하나의 커패시터부(120)를 포함하는 것으로 도시되고 설명되었으나, 이에 한정되지 않고, 바리스터부(110) 또는 커패시터부(120)가 복수로 구비될 수도 있다. 예컨대, 도시하지는 않았지만, 바리스터부(110)를 중앙에 배치하고, 그 상측과 하측 각각에 커패시터부(120)를 차단층(130)의 개재하에 구비하는 것도 가능하다.1, the hybrid anti-shock device 100 includes one varistor portion 110 and one capacitor portion 120. However, the present invention is not limited thereto, and the varistor portion 110 or the capacitor A plurality of units 120 may be provided. For example, although not shown, it is also possible to dispose the varistor part 110 at the center and the capacitor part 120 at the upper side and the lower side, respectively, with the barrier layer 130 interposed therebetween.
바리스터부(110)는 바리스터 물질층(110a), 제1내부전극(112,114,118), 및 제2내부전극(116)을 포함하며, 누선전류 차단기능 및 정전기 보호기능을 갖는다. The varistor portion 110 includes a varistor material layer 110a, first internal electrodes 112, 114 and 118, and a second internal electrode 116, and has a luminescence current blocking function and an electrostatic protection function.
바리스터 물질층(110a)은 바리스터 물질을 포함하며, 일례로, ZnO를 주성분으로 Zn, Nb, Pr, Bi, Co. Si, Cr, 및 Mn의 산화물 중 적어도 1종 이상을 포함할 수 있다. 여기서, 바리스터 물질층(110a)은 복수 개로 이루어진다. 즉, 하나의 바리스터 물질층(110a) 상에 제1내부전극(112,114,118) 또는 제2내부전극(116)이 구비되기 때문에, 제1내부전극(112,114,118) 및 제2내부전극(116)의 배치 구성에 따라 복수 개로 구성될 수 있다.The varistor material layer 110a includes a varistor material. For example, the varistor material layer 110a may include ZnO, Zn, Nb, Pr, Bi, Co. And oxides of Si, Cr, and Mn. Here, a plurality of varistor material layers 110a are formed. That is, since the first inner electrodes 112, 114 and 118 or the second inner electrodes 116 are provided on one varistor material layer 110a, the arrangement of the first inner electrodes 112, 114 and 118 and the second inner electrodes 116 As shown in FIG.
제1내부전극(112,114,118)들은 동일 바리스터 물질층(110a) 상에 일정간격 이격되어 구비되며, 적어도 두 개 이상으로 구성된다. 일례로, 양 단부에 배치되는 제1내부전극(112,114)은 한 쌍의 외부전극(140)에 각각 통전 가능하게 연결되고, 외부전극(140)에 연결되지 않은 위치에도 중간 제1내부전극(118)이 형성될 수 있다. 이때, 중간 제1내부전극(118)은 후술할 적어도 하나 이상의 제2내부전극(116) 사이 공간부를 마주보는 위치에 배치될 수 있다. 여기서, 제1내부전극(112,114,118) 각각은 서로 일정 간격 이격되어 배치될 수 있다. The first internal electrodes 112, 114, and 118 are spaced apart from each other on the same varistor material layer 110a and include at least two or more of them. For example, the first internal electrodes 112 and 114 disposed at both ends are electrically connected to the pair of external electrodes 140, and the first internal electrodes 118 and 118 are also connected to the external electrodes 140, May be formed. At this time, the intermediate first internal electrode 118 may be disposed at a position facing a space between at least one second internal electrode 116, which will be described later. Here, the first internal electrodes 112, 114, and 118 may be spaced apart from each other by a predetermined distance.
제2내부전극(116)은 복수 개의 제1내부전극(112,114,118)과 상이한 바리스터 물질층(110a) 상에 구비되며, 적어도 하나 이상으로 구성된다. 일례로, 제1내부전극(112,114)이 두 개인 경우, 제2내부전극(116)은 복합형 감전방지소자(100)의 단면 상에서 제1내부전극(112,114) 사이에 하나만 배치되고, 제1내부전극(112,114,118)이 세 개인 경우, 제2내부전극(116)은 복합형 감전방지소자(100)의 단면 상에서 제1내부전극(112,114,118) 사이에 각각 하나씩 두 개가 배치될 수 있다. 이때, 제2내부전극(116)은 외부전극(140)과 전기적으로 연결되지 않도록 배치될 수 있다.The second internal electrode 116 is provided on at least one varistor material layer 110a different from the first internal electrodes 112, 114, and 118, For example, when there are two first internal electrodes 112 and 114, the second internal electrode 116 is disposed on only one of the first internal electrodes 112 and 114 on the cross section of the composite anti-skid device 100, In the case where the electrodes 112, 114 and 118 are three, the second internal electrode 116 may be disposed on the cross section of the composite anti-skid device 100, one each between the first internal electrodes 112, 114 and 118. At this time, the second internal electrode 116 may be disposed so as not to be electrically connected to the external electrode 140.
여기서, 제1내부전극(112,114,118)과 제2내부전극(116)은 서로 대향하여 일부가 중첩되는 것으로 도시되고 설명되었으나, 이에 한정되지 않고, 서로 중첩되지 않게 배치될 수도 있다. Here, the first internal electrodes 112, 114, and 118 and the second internal electrodes 116 are partially overlapped with each other, but the present invention is not limited thereto. The first internal electrodes 112, 114, and 118 may be disposed without overlapping each other.
이때, 제1내부전극(112,114,118)들 사이의 거리는 제1내부전극(112,114,118)과 제2내부전극(116) 사이의 거리보다 크게 형성될 수 있다. 이에 의해 외부전극(140)으로부터 유입되는 정전기는 제1내부전극(112), 제2내부전극(116), 제1내부전극(118), 제2내부전극(116) 및 제1내부전극(114) 순서의 경로로 바리스터 물질층(110a)을 통해 전파될 수 있다.At this time, the distance between the first internal electrodes 112, 114, and 118 may be greater than the distance between the first internal electrodes 112, 114, and 118 and the second internal electrodes 116. The static electricity flowing from the external electrode 140 flows through the first internal electrode 112, the second internal electrode 116, the first internal electrode 118, the second internal electrode 116, and the first internal electrode 114 Lt; RTI ID = 0.0 > 110a < / RTI >
이때, 바리스터부(110)는 제1내부전극(112,114,118)과 제2내부전극(116) 사이의 간격 및 바리스터 물질의 입경이 항복전압(Vbr)을 만족할 수 있도록 형성될 수 있다. 여기서, 바리스터부(110)의 항복전압(Vbr)은 제1내부전극(112)과 제2내부전극(116) 사이, 제2내부전극(116)과 제1내부전극(118) 사이, 제1내부전극(118)과 제2내부전극(116) 사이, 및 제2내부전극(116)과 제1내부전극(114) 사이의 각각의 단위 항복전압의 총합이다. At this time, the varistor portion 110 may be formed such that the gap between the first internal electrodes 112, 114, and 118 and the second internal electrodes 116 and the particle diameter of the varistor material satisfy the breakdown voltage Vbr. The breakdown voltage Vbr of the varistor unit 110 is applied between the first internal electrode 112 and the second internal electrode 116, between the second internal electrode 116 and the first internal electrode 118, The sum of the unit breakdown voltages between the internal electrode 118 and the second internal electrode 116 and between the second internal electrode 116 and the first internal electrode 114, respectively.
아울러, 바리스터부(110)의 항복전압(Vbr)은 복합형 감전방지소자(100)가 적용되는 휴대용 전자장치의 외부전원에 의한 누설전류를 차단하도록 상기 외부전원의 정격전압(Vin)보다 클 수 있다. 여기서, 외부전원은 상용 전원일 수 있다. The breakdown voltage Vbr of the varistor part 110 may be greater than the rated voltage Vin of the external power source so as to block the leakage current due to the external power source of the portable electronic device to which the hybrid anti- have. Here, the external power source may be a commercial power source.
이에 의해, 바리스터부(110)는 정전기가 유입되는 경우, 정전기의 전압이 항복전압(Vbr)보다 크기 때문에 턴온되어 정전기를 통과시킬 수 있고, 아울러, 외부전원에 의한 누설전류가 유입되는 경우, 외부전원의 정격전압보다 항복전압(Vbr)이 크기 때문에 턴오프되어 누설전류를 차단할 수 있다.Accordingly, when the static electricity is introduced, the varistor part 110 can be turned on to pass the static electricity because the voltage of the static electricity is larger than the breakdown voltage Vbr. In addition, when the leakage current due to the external power source flows, The breakdown voltage Vbr is larger than the rated voltage of the power supply, so that the leakage current can be cut off.
여기서, 제2내부전극(116)은 외부전극(140)에 연결되지 않은 것으로 도시되고 설명되었으나, 이에 한정되지 않고, 제1내부전극(112,114,118) 및 제2내부전극(116)의 배치 순서에 따라 제1내부전극(112)이 하나의 외부전극(140)에 연결되고, 제2내부전극(116)이 다른 하나의 외부전극(140)에 연결될 수도 있다. Although the second internal electrode 116 is shown as being not connected to the external electrode 140, the present invention is not limited thereto. The first internal electrode 112, the second internal electrode 114, The first internal electrode 112 may be connected to one external electrode 140 and the second internal electrode 116 may be connected to the other external electrode 140.
아울러, 제1내부전극(112,114,118)은 제2내부전극(116)을 중심으로 상하에 배치될 수 있다. 즉, 제1내부전극(112,114,118)이 구비된 바리스터 물질층(110a)과 제2내부전극(116)이 구비된 바리스터 물질층(110a)이 반복적으로 적층될 수 있다. 이에 의해 정전기의 경로가 병렬로 복수 개가 구비되므로 정전기에 대한 응답특성을 더욱 향상시킬 수 있다. In addition, the first internal electrodes 112, 114, and 118 may be disposed above and below the second internal electrode 116. That is, the varistor material layer 110a including the varistor material layer 110a having the first internal electrodes 112, 114, and 118 and the second internal electrode 116 may be repeatedly stacked. Accordingly, since a plurality of static electricity paths are provided in parallel, the response characteristic to static electricity can be further improved.
이때, 제1내부전극(112,114) 및 제2내부전극(116)은 Ag, Pd, Pt, Au, Ni, 및 Cu 중 적어도 1종 이상을 포함할 수 있다. 일례로, 제1내부전극(112,114,118) 및 제2내부전극(116)은 Ag 단독으로 사용되는 경우 정전기(ESD) 내성이 열화될 수 있기 때문에 Ag에 상기 열거된 성분 중 적어도 하나를 함유시켜 합금화할 수 있다. At this time, the first internal electrodes 112 and 114 and the second internal electrodes 116 may include at least one of Ag, Pd, Pt, Au, Ni, and Cu. For example, since the first internal electrodes 112, 114, and 118 and the second internal electrode 116 may be deteriorated in electrostatic ESD resistance when Ag is used alone, Ag may contain at least one of the components listed above and may be alloyed .
커패시터부(120)는 유전체 시트층(120a) 및 커패시터 전극(122,124)을 포함한다. The capacitor portion 120 includes a dielectric sheet layer 120a and capacitor electrodes 122,
유전체 시트층(120a)은 유전체를 포함하며, 일례로, BaTiO3을 주성분으로, Ba, Ti, Si, Sr, Bi, W, 및 Nd의 산화물 중 적어도 1종 이상을 포함할 수 있다. 여기서, 유전체 시트층(120a)은 복수 개로 이루어진다. 즉, 하나의 유전체 시트층(120a) 상에 하나의 커패시터 전극(122,124)이 구비되기 때문에, 커패시터 전극(122,124)의 배치 구성에 따라 복수 개로 구성될 수 있다.The dielectric sheet layer 120a may include at least one or more of Ba, Ti, Si, Sr, Bi, W, and Nd oxides as a main component including BaTiO 3 . Here, the plurality of dielectric sheet layers 120a are formed. That is, since one capacitor electrode 122 and 124 is provided on one dielectric sheet layer 120a, the capacitor electrodes 122 and 124 may be formed in plural numbers according to the arrangement of the capacitor electrodes 122 and 124. [
이와 같이, 바리스터 물질과 상이한 이종의 유전체를 이용하여 커패시터부(120)를 구현함으로써, 커패시턴스의 대용량 구현이 용이하지 않은 바리스터부(110)의 특성을 보완하여 대용량으로 다양한 값으로 커패시턴스를 용이하게 구현할 수 있다.As described above, by implementing the capacitor unit 120 using different kinds of dielectrics different from the varistor material, the varistor unit 110, which is not easy to implement a large capacitance, can be complemented to easily realize capacitance with various values in a large capacity .
특히, 커패시터부(120)는 바리스터부(110)와의 영향이 배제되어 내부에 적층 형성되는 커패시터 전극(122,124)의 간격을 보다 조밀하게 형성할 수 있어 커패시터 전극(122,124)의 적층 수를 증가시키거나, 고유전율의 유전체 시트층(120a)을 이용하여 고용량의 커패시턴스의 구현이 용이할 수 있다. Particularly, the capacitor unit 120 eliminates the influence of the varistor unit 110, so that the interval between the capacitor electrodes 122 and 124 laminated in the inside can be more densely formed, thereby increasing the number of stacked capacitor electrodes 122 and 124 , It is easy to realize a capacitance of a high capacity by using the dielectric sheet layer 120a having high dielectric constant.
이에 의해 커패시터부(120)는 통신 목적에 대응하는 대역별 통신신호를 감쇄없이 전달할 수 있다.Thus, the capacitor unit 120 can transmit the per-band communication signal corresponding to the communication purpose without attenuation.
커패시터 전극(122,124)은 각각의 유전체 시트층(120a) 상에 하나씩 구비될 수 있다. Capacitor electrodes 122 and 124 may be provided one on each dielectric sheet layer 120a.
이와 같이, 커패시터부(120)는 커패시터 전극(122,124)이 구비된 복수 개의 유전체 시트층(120a)이 순차적으로 적층될 수 있다. 여기서, 서로 대칭되는 위치에 커패시터 전극(122) 및 커패시터 전극(124)이 각각 구비되는 유전체 시트층(120a)이 교대로 적층될 수 있다.As described above, the capacitor unit 120 may include a plurality of dielectric sheet layers 120a having the capacitor electrodes 122 and 124 sequentially stacked. Here, the dielectric sheet layers 120a each having the capacitor electrodes 122 and the capacitor electrodes 124 at positions symmetrical to each other can be alternately stacked.
이때, 커패시터부(120)는 외부전원의 정격전압(Vin)보다 큰 절연파괴 전압(Vcp)을 가질 수 있다. 이에 의해 커패시터부(110)는 외부전원에 의한 누설전류가 유입되는 경우, 누설전류를 차단하여 사용자의 감전을 방지할 수 있다.At this time, the capacitor unit 120 may have an insulation breakdown voltage Vcp that is higher than the rated voltage Vin of the external power source. Accordingly, when the leakage current due to the external power source flows into the capacitor unit 110, the capacitor unit 110 can prevent the user from electric shock by blocking the leakage current.
여기서, 커패시터 전극(122,124) 사이의 거리는 20㎛ 이상일 수 있다. 이와 같이, 커패시터 전극(122,124)은 사이의 간격을 충분히 확보함으로써, 무선 통신에 적합한 커패시턴스를 구현하는 동시에 누설전류 차단을 위한 절연파괴 전압(Vcp)을 증대시킬 수 있다. Here, the distance between the capacitor electrodes 122 and 124 may be 20 占 퐉 or more. As described above, by sufficiently ensuring the interval between the capacitor electrodes 122 and 124, the capacitance suitable for wireless communication can be realized and the dielectric breakdown voltage Vcp for blocking the leakage current can be increased.
이때, 커패시터 전극(122,124)은 Ag, Pd, Pt, Ni, Au, 및 Cu 중 적어도 1종 이상을 포함할 수 있다. 일례로, 커패시터 전극(122,124)은 Ag 단독으로 사용되는 경우 정전기(ESD) 내성이 열화될 수 있기 때문에 Ag에 상기 열거된 성분 중 적어도 하나를 함유시켜 합금화할 수 있다.At this time, the capacitor electrodes 122 and 124 may include at least one of Ag, Pd, Pt, Ni, Au, and Cu. For example, the capacitor electrodes 122 and 124 may be alloyed by containing at least one of the above-listed components in the Ag since ESD resistance may deteriorate when Ag alone is used.
여기서, 바리스터부(110)와 커패시터부(120)는 대략 동일한 두께로 구비될 수 있지만, 이에 한정되지 않으며, 용도에 따라 서로 상이한 두께로 구비될 수도 있다. 이때, 바리스터부(110)와 커패시터부(120)의 두께의 합은 복합형 감전방지소자(100)의 규격을 만족하도록 설정된다. 일례로, 1005 규격(소자의 가로 길이 1㎜, 세로 길이 0.5㎜)의 경우, 바리스터부(110)와 커패시터부(120)는 각각 0.3㎜ 이하로 복합형 감전방지소자(100)의 전체 두께의 1/3~2/3배의 두께로 구비될 수 있다.Here, the varistor portion 110 and the capacitor portion 120 may have substantially the same thickness, but the present invention is not limited thereto. The varistor portion 110 and the capacitor portion 120 may have different thicknesses depending on the application. At this time, the sum of the thicknesses of the varistor part 110 and the capacitor part 120 is set so as to satisfy the specification of the composite anti-skid device 100. For example, in the case of the 1005 standard (1 mm width and 0.5 mm length), the varistor portion 110 and the capacitor portion 120 are each 0.3 mm or less in total thickness of the composite anti-skid device 100 It may be provided in a thickness of 1/3 to 2/3 times.
차단층(130)은 바리스터부(110)와 커패시터부(120) 사이에 배치된다. 여기서, 차단층(130)은 바리스터부(110)와 커패시터부(120)의 동시 소성시 바리스터부(110)와 커패시터부(120)를 구성하는 바리스터 물질층(110a)과 유전체 시트층(120a)을 구성하는 각각의 물질들이 동시 소성 과정에서 다른 층으로 이동하는 것을 차단하는 기능을 수행할 수 있다.The barrier layer 130 is disposed between the varistor portion 110 and the capacitor portion 120. The barrier layer 130 may include a varistor material layer 110a and a dielectric sheet layer 120a constituting the varistor part 110 and the capacitor part 120 when the varistor part 110 and the capacitor part 120 are simultaneously fired. To prevent each of the materials constituting the layer from moving to another layer during the co-firing process.
이때, 상기 차단층(130)은 ZrO3을 주성분으로 하고, 바리스터부(110)와 커패시터부(120)의 소성후 수축률 제어를 위하여, ZrO3에 비해 상대적으로 적은 양의 ZnO가 함유되는 절연체를 포함할 수 있다. 일례로, 차단층(130)은 ZnO이 0.5~1.5 wt% 함유될 수 있다. 즉, 차단층(130)은 ZrO3과 ZnO가 대략 9:1로 구성될 수 있다. At this time, the barrier layer 130 is made of ZrO 3 as a main component and an insulator containing a relatively small amount of ZnO as compared with ZrO 3 for controlling the shrinkage ratio after firing of the varistor part 110 and the capacitor part 120 . For example, the barrier layer 130 may contain 0.5 to 1.5 wt% of ZnO. That is, the barrier layer 130 may have a composition of ZrO 3 and ZnO of about 9: 1.
이에 의해, 동시 소성시 바리스터부(110)나 커패시터부(120)로부터 차단층(130)으로의 물질이동이 있을 수 있으나, 차단층(130)으로부터 바리스터부(110)나 커패시터부(120)로의 물질이동은 실질적으로 억제할 수 있다. Thereby, there is a possibility of transferring material from the barrier layer 130 to the varistor part 110 or the capacitor part 120 from the varistor part 110 or the capacitor part 120, Substance transfer can be substantially inhibited.
결과적으로, 차단층(130)에 의해 바리스터부(110)와 커패시터부(120) 사이의 물질이동이 억제될 수 있어 동시 소성에 따라 커패시터부(120)의 물질이 바리스터부(110)의 물질과 혼합되는 것을 억제할 수 있고, 이종 재질의 동시 소성 과정에서 발생하는 수축률 차이에 의한 뒤틀림 현상들이 개선되므로 동시 소성이 가능하면서도 바리스터 고유의 충분한 정전기(ESD) 특성을 확보하고, 충분한 커패시턴스를 구현할 수 있어 통신신호를 원활하게 통과시킬 수 있다. As a result, the material flow between the varistor part 110 and the capacitor part 120 can be suppressed by the barrier layer 130 so that the material of the capacitor part 120 can be prevented from being mixed with the material of the varistor part 110 It is possible to suppress the mixing of the varistor material and warping phenomena due to the difference in shrinkage ratio occurring in the simultaneous firing process of different materials. Therefore, it is possible to provide sufficient ESD characteristic inherent to the varistor, The communication signal can be passed smoothly.
또한, 차단층(130)은 절연체로 형성되어, 바리스터부(110)와 커패시터부(120)의 전기적 특성을 완전히 차단하므로, 바리스터부(110)와 커패시터부(120) 상호간의 특성을 전기적으로 분리하므로, 각각의 정전기 보호 기능과 통신신호 통과기능이 간섭되지 않아 소자부품의 특성 열화를 억제할 수 있다.The barrier layer 130 is formed of an insulator to completely isolate the varistor portion 110 and the capacitor portion 120 from each other to electrically isolate the characteristics of the varistor portion 110 and the capacitor portion 120 from each other. Therefore, the respective electrostatic protection functions and the communication signal passing function are not interfered with each other, and deterioration of the characteristics of the element parts can be suppressed.
또한, 차단층(130)은 바리스터부(110)와 커패시터부(120)의 물질과 유사한 ZnO가 함유되기 때문에, 바리스터부(110)와 커패시터부(120) 각각에 대한 접착 친화도가 높으므로, 동시 소성시 바리스터부(110)와 커패시터부(120)의 결합성을 안정적으로 확보할 수도 있다.Since the barrier layer 130 contains ZnO similar to the materials of the varistor part 110 and the capacitor part 120, the adhesion affinity to the varistor part 110 and the capacitor part 120 is high, It is possible to stably secure the coupling property between the varistor part 110 and the capacitor part 120 when co-firing.
이때, ZnO은 바리스터부(110)나 커패시터부(120)의 물성에 의한 수축률에 따라 차단층(130)에 함유되는 비율이 조정될 수 있다. At this time, the proportion of ZnO contained in the barrier layer 130 can be adjusted according to the shrinkage ratio due to the physical properties of the varistor portion 110 and the capacitor portion 120.
결과적으로, 차단층(130)은 바리스터부(110)와 커패시터부(120)를 접합하는 기능과 전기적 및 열적으로 바리스터부(110)와 커패시터부(120)를 분리하여 특성 열화를 방지하는 기능을 갖는다. As a result, the barrier layer 130 has a function of joining the varistor portion 110 and the capacitor portion 120, and a function of electrically and thermally separating the varistor portion 110 and the capacitor portion 120 to prevent deterioration of characteristics .
이에 의해, 바리스터부(110)와 커패시터부(120)의 상이한 온도특성에 의한 상호간의 특성 열화를 방지할 수 있고, 따라서 바리스터 고유의 우수한 정전기(ESD) 내성을 가짐과 동시에 안정적인 온도특성을 제공할 수 있으며, 통신신호를 원활하게 투과할 수 있는 고용량의 커패시턴스를 용이하게 구현할 수 있다. 통상적으로 매칭 소자로 본 소자를 사용할 때에는 30pF 내지 150pF의 커패시턴스 값이 가장 많이 사용될 수 있다.As a result, it is possible to prevent deterioration of mutual characteristics due to different temperature characteristics of the varistor portion 110 and the capacitor portion 120, and thus to provide excellent ESD resistance inherent to the varistor and to provide stable temperature characteristics And it is possible to easily realize a capacitance of a high capacity which can smoothly transmit a communication signal. Typically, when using this device as a matching device, a capacitance value of 30 pF to 150 pF can be used the most.
외부단자(140)는 바리스터부(110) 및 커패시터부(120)의 양측에 구비되며, 복수 개의 커패시터 전극(122,124) 및 제1내부전극(112,114,118) 또는 제2내부전극(116)에 연결되며, 한 쌍으로 이루어진다. The external terminal 140 is provided on both sides of the varistor part 110 and the capacitor part 120 and is connected to the plurality of capacitor electrodes 122 and 124 and the first internal electrodes 112, 114 and 118 or the second internal electrodes 116, It is made up of a pair.
상기 외부단자(140)는 바리스터부(110)와 커패시터부(120) 사이를 전기적으로 병렬 연결하는 동시에, 복합형 감전방지소자(100)를 회로기판에 솔더링하기 위한 전극으로서, 단면상 "ㄷ"자 형상으로 이루어질 수 있다. The external terminal 140 is an electrode for electrically connecting the varistor part 110 and the capacitor part 120 in parallel and soldering the composite anti-static device 100 to the circuit board, Shape.
이에 의해, 정전기, 외부전원의 누설전류 및 통신 신호에 대하여 바리스터부(110) 및 커패시터부(120)가 선별적으로 동작함으로써, 복합형 감전방지소자(100)는 정전기 보호, 감전방지 및 통신신호 전달기능을 모두 수행할 수 있다.Thereby, the varistor portion 110 and the capacitor portion 120 selectively operate with respect to the static electricity, the leakage current of the external power supply, and the communication signal, so that the hybrid type anti-electric device 100 can be protected against static electricity, Transfer function can be performed.
이때, 외부단자(140)는 Ag와 글라스를 포함할 수 있다. 이에 의해 제1내부전극(112,114,218) 또는 제2내부전극(116)과 연결하는 전기적 특성을 향상시키는 동시에 바리스터부(110) 및 커패시터부(120)와의 접착성을 향상시킬 수 있다. At this time, the external terminal 140 may include Ag and glass. Thus, it is possible to improve the electrical characteristics of connection to the first internal electrodes 112, 114, and 218 or the second internal electrodes 116, and to improve the adhesion to the varistor part 110 and the capacitor part 120.
아울러, 외부단자(140)는 그와 연결되지 않은 제1내부전극(112,114,118) 또는 제2내부전극(116)과의 최소 인접거리가 20㎛ 이상일 수 있다. 이에 의해, 상술한 바와 같이 제1내부전극(112,114,118) 및 제2내부전극(116) 사이에서 진행하는 정전기 등과 같은 신호가 외부단자(140)로 그 진행경로가 변경되는 것을 방지할 수 있다.In addition, the external terminal 140 may have a minimum adjacent distance between the first internal electrode 112, 114, and 118 or the second internal electrode 116 that is not connected to the external terminal 140, As a result, it is possible to prevent a signal, such as static electricity, traveling between the first internal electrodes 112, 114, and 118 and the second internal electrodes 116 from being changed in the path to the external terminal 140, as described above.
또한, 외부단자(140)는 그와 연결되지 않은 커패시터 전극(122,124)과의 최소 인접거리가 20㎛ 이상일 수 있다. 즉, 하나의 커패시터 전극(122)과, 다른 커패시터 전극(124)이 연결된 외부단자(140) 사이의 거리가 20㎛ 이상일 수 있다. In addition, the external terminal 140 may have a minimum adjacent distance with the capacitor electrodes 122 and 124 not connected to the external terminal 140 of 20 m or more. That is, the distance between one capacitor electrode 122 and the external terminal 140 connected to the other capacitor electrode 124 may be 20 μm or more.
여기서, 외부단자(140)는 회로기판 등의 외부와의 결합성 및 전기적 특성을 향상시키기 위해 추가로 Ni/Sn 또는 Ni/Au로 도금될 수 있다. Here, the external terminal 140 may further be plated with Ni / Sn or Ni / Au to improve the bonding property with the outside of the circuit board and the like and electrical characteristics.
한편, 본 발명의 제2실시예에 따른 복합형 감전방지소자(200)는 차단층(230) 내에 금속전극(232)이 배치될 수 있다. Meanwhile, in the composite type anti-electrostatic device 200 according to the second embodiment of the present invention, the metal electrode 232 may be disposed in the barrier layer 230.
도 2에 도시된 바와 같이, 복합형 감전방지소자(200)는 차단층(230) 내에 단층의 금속전극(232)을 추가로 포함할 수 있다.2, the hybrid anti-electrostatic device 200 may further include a single-layer metal electrode 232 in the barrier layer 230. [
이때, 차단층(230)은 복수 개의 절연층을 포함할 수 있다. 일례로, 금속전극(232)은 하나의 절연층 상에 구비되기 때문에, 금속전극(232)의 상측에도 다른 절연층이 구비될 수 있다. 즉, 차단층(130)은 금속전극(232)의 적층 수에 따라 복수 개의 절연층을 포함할 수 있다.At this time, the barrier layer 230 may include a plurality of insulating layers. For example, since the metal electrode 232 is provided on one insulating layer, another insulating layer may be provided on the upper side of the metal electrode 232. That is, the barrier layer 130 may include a plurality of insulating layers depending on the number of stacked metal electrodes 232.
여기서, 금속은 바리스터부(110), 커패시터부(120) 및 차단층(230)의 절연체보다 그 소성 온도가 낮기 때문에, 금속전극(232)은 이들보다 먼저 빠르게 소결되므로 소결 이전의 바리스터부(110)와 커패시터부(120) 물질의 이동을 더욱 억제할 수 있다.Since the firing temperature of the metal is lower than that of the insulators of the varistor part 110, the capacitor part 120 and the barrier layer 230, the metal electrode 232 is sintered earlier than the firing step, And the material of the capacitor unit 120 can be further suppressed.
이때, 금속전극(232)은 바리스터부(110)와 커패시터부(120) 사이의 물질이동을 최대한 억제하기 위해 바리스터부(110)와 커패시터부(120) 사이의 접합면적에 근사한 면적을 갖도록 구비될 수 있다. 바람직하게는 접합면적보다는 작은 면적을 가지도록 형성될 수 있다. The metal electrode 232 is provided to have an area approximate to the junction area between the varistor part 110 and the capacitor part 120 in order to minimize the mass transfer between the varistor part 110 and the capacitor part 120 . And may preferably be formed to have an area smaller than the bonding area.
여기서, 금속전극(232)은 바리스터부(110) 및 커패시터부(120) 양측에 배치된 한 쌍의 외부전극(140)에 연결되지 않을 수 있다. 즉, 금속전극(232)의 양단이 외부전극(140)과 전기적으로 연결되는 경우, 복합형 감전방지소자(100)가 단락(short)되므로, 이를 방지하기 위해 금속전극(232)은 외부전극(140)과 일정한 거리로 이격되어 배치될 수 있다. 일례로, 금속전극(232)의 양 단부는 외부전극(140)으로부터 20㎛ 이상 이격되도록 배치될 수 있다.Here, the metal electrode 232 may not be connected to the varistor portion 110 and the pair of external electrodes 140 disposed on both sides of the capacitor portion 120. That is, when both ends of the metal electrode 232 are electrically connected to the external electrode 140, the composite type anti-skid device 100 is short-circuited. To prevent this, the metal electrode 232 is connected to the external electrode 140, respectively. For example, both ends of the metal electrode 232 may be disposed so as to be separated from the outer electrode 140 by 20 占 퐉 or more.
이와 같이, 차단층(230) 내에 바리스터부(110)나 커패시터부(120)에 비하여 소성 온도가 상대적으로 낮은 전극층을 구비함으로써, 바리스터부(110)와 커패시터부(120) 사이의 물질이동을 효과적으로 차단할 수 있다. Since the electrode layer having a relatively lower firing temperature than the varistor portion 110 and the capacitor portion 120 is provided in the barrier layer 230 as described above, the material movement between the varistor portion 110 and the capacitor portion 120 can be effectively Can be blocked.
그러나 상기 전극층이 소성 온도가 낮은 글라스를 포함하는 경우, 글라스가 바리스터부(110)나 커패시터부(120)보다 소성 온도가 낮아 먼저 소결되어 고온에서 물질의 이동을 억제할 수는 있지만, 저온에서는 물질의 이동이 발생하므로 내부에 결함이 발생하기 때문에 글라스를 이용하여 전극층을 형성하는 것은 적합하지 않다. However, when the electrode layer includes a glass having a low firing temperature, the firing temperature of the glass is lower than that of the varistor portion 110 and the capacitor portion 120, so that the glass can be firstly sintered to suppress the movement of the material at high temperature. However, It is not suitable to form an electrode layer using a glass because a defect occurs inside.
한편, 본 발명의 제3실시예에 따른 복합형 감전방지소자(300)는 차단층(330) 내에 2층의 제1 및 제2 금속전극(332,334)이 배치될 수도 있다. Meanwhile, in the hybrid anti-electric device 300 according to the third embodiment of the present invention, two layers of first and second metal electrodes 332 and 334 may be disposed in the barrier layer 330.
도 3에 도시된 바와 같이, 복합형 감전방지소자(300)는 차단층(330) 내에 이중층의 제 1 및 제 2 금속전극(332,334)을 포함할 수 있다.As shown in FIG. 3, the hybrid anti-electrostatic device 300 may include first and second metal electrodes 332 and 334 in a double layer in a barrier layer 330.
이에 의해, 하나의 금속전극을 통해 바리스터부(110) 또는 커패시터부(120)의 물질이 이동하더라도 추가적인 제 1 및 제 2 금속전극(332,334)이 바리스터부(110) 또는 커패시터부(120)의 물질 이동을 억제함으로써, 바리스터부(110)와 커패시터부(120) 사이의 물질 이동을 한층 더 억제할 수 있다. The first and second metal electrodes 332 and 334 are electrically connected to the varistor part 110 or the capacitor part 120 even if the material of the varistor part 110 or the capacitor part 120 moves through one metal electrode. By suppressing the movement, mass transfer between the varistor portion 110 and the capacitor portion 120 can be further suppressed.
아울러, 이중의 제 1 및 제 2 금속전극(332,334)이 수직 방향으로 일부가 중첩된 상태에서 외부전극(140)에 각각 연결될 수 있다. 즉, 제 1 금속전극(332)의 일측 단부와 제 2 금속전극(224)의 일측 단부가 각각 외부전극(140)에 연결되기 때문에, 바리스터부(110)와 커패시터부(120)의 계면에서 도 2의 단층 금속전극(232)에 비하여 더 넓은 면적에 걸쳐 물질의 이동을 억제할 수 있다. In addition, the first and second metal electrodes 332 and 334 may be connected to the external electrode 140 in a state where the first and second metal electrodes 332 and 334 partially overlap each other in the vertical direction. That is to say, since one end of the first metal electrode 332 and one end of the second metal electrode 224 are connected to the outer electrode 140, the gap between the varistor portion 110 and the capacitor portion 120 It is possible to suppress the movement of the material over a wider area than the single-layer metal electrode 232 of FIG.
또한, 이중으로 제 1 및 제 2 금속전극(332,334)이 배치되기 때문에, 제 1 및 제 2 금속전극(332,334)과 외부전극(140) 사이를 소자의 단락 방지를 위해 이격 배치할 필요가 없어 설계 자유도가 향상될 수 있다.In addition, since the first and second metal electrodes 332 and 334 are disposed in a double layer, it is not necessary to dispose the first and second metal electrodes 332 and 334 and the outer electrode 140 apart from each other to prevent short- The degree of freedom can be improved.
여기서, 제 1 금속전극(332)은 어느 하나의 외부전극(140)에 연결되고, 제 2 금속전극(334)은 다른 하나의 외부전극(140)에 연결될 수 있다. 이때, 제 1 및 제 2 금속전극(332,334)은 서로 단락되지 않도록 일정 거리 이격 배치될 수 있다. 이때, 차단층(330)은 절연체이므로 전기적으로 단락 되지 않을 수 있다.The first metal electrode 332 may be connected to one of the outer electrodes 140 and the second metal electrode 334 may be connected to the other outer electrode 140. At this time, the first and second metal electrodes 332 and 334 may be spaced apart from each other by a predetermined distance so as not to be short-circuited. At this time, since the barrier layer 330 is an insulator, it may not be electrically short-circuited.
한편, 본 발명의 제4실시예에 따른 복합형 감전방지소자(300')는 이중층의 제 1 및 제 2 금속전극(332,334) 사이에 플로팅 금속전극(336,338)이 구비될 수 있다. Meanwhile, in the hybrid anti-electro-static device 300 'according to the fourth embodiment of the present invention, the floating metal electrodes 336 and 338 may be provided between the first and second metal electrodes 332 and 334 of the double layer.
도 4에 도시된 바와 같이, 복합형 감전방지소자(300')는 차단층(330') 내에서 제 1 및 제 2 금속전극(332,334) 사이에 일정 거리로 이격 배치되는 플로팅 금속전극(336,338)을 더 포함할 수 있다. 4, the hybrid anti-electric device 300 'includes floating metal electrodes 336 and 338 spaced apart from each other by a predetermined distance between the first and second metal electrodes 332 and 334 in the blocking layer 330' As shown in FIG.
이에 의해, 차단층(330') 내에 구비된 금속전극에 대한 외부전극(140) 사이의 내압이 플로팅 금속전극(336.338)의 수에 따라 증가하기 때문에, 금속전극(332,334,336,338) 사이의 수직 간격을 더욱 근접하게 배치할 수 있어 차단층(330')에 의한 부피의 증가를 억제할 수 있다. The vertical distance between the metal electrodes 332, 334, 336, and 338 is increased by the number of the floating metal electrodes 336.338 because the breakdown voltage between the outer electrodes 140 against the metal electrodes provided in the blocking layer 330 ' It is possible to arrange them close to each other, thereby suppressing an increase in volume caused by the blocking layer 330 '.
또한, 복합형 감전방지소자(300') 전체의 사이즈 규격을 달성하기 위해 바리스터부(110) 또는 커패시터부(120)의 부피를 감소시킬 필요가 없이 그 전기적 특성의 열화를 방지할 있다. In addition, it is not necessary to reduce the volume of the varistor portion 110 or the capacitor portion 120 in order to achieve the size specification of the entirety of the hybrid anti-electric device 300 ', and deterioration of its electrical characteristics can be prevented.
이때, 제 1 및 제 2 금속전극(332,334)과 플로팅 금속전극(336,338)은 각각이 수평 방향 및 수직 방향으로 일정거리 이격되어 배치되고, 수직 방향으로 일부가 중첩되게 배치될 수 있다.At this time, the first and second metal electrodes 332 and 334 and the floating metal electrodes 336 and 338 may be spaced apart from each other by a predetermined distance in the horizontal direction and the vertical direction, and may be partially overlapped in the vertical direction.
한편, 본 발명의 제5실시예에 따른 복합형 감전방지소자(400)는 제 1 및 제 2 금속전극(432,434) 사이에 에어갭(436)이 구비될 수 있다.In the composite anti-shock device 400 according to the fifth embodiment of the present invention, an air gap 436 may be provided between the first and second metal electrodes 432 and 434.
도 5에 도시된 바와 같이, 복합형 감전방지소자(400)는 차단층(430) 내에서 제 1 및 제 2 금속전극(432,434) 및 에어갭(436)을 포함할 수 있다.5, the hybrid anti-electrostatic device 400 may include first and second metal electrodes 432 and 434 and an air gap 436 in the barrier layer 430.
여기서, 제 1 및 제 2 금속전극(432,434)은 동일 평면 상에 배치되어 외부전극(140)에 각각 연결될 수 있다. 즉, 제 1 및 제 2 금속전극(432,434)은 수평으로 서로 이격 배치될 수 있다. 또한, 제 1 및 제 2 금속전극(432,434)의 사이에는 에어갭(436)이 배치될 수 있다. Here, the first and second metal electrodes 432 and 434 may be disposed on the same plane and connected to the external electrode 140, respectively. That is, the first and second metal electrodes 432 and 434 may be horizontally spaced apart from each other. An air gap 436 may be disposed between the first and second metal electrodes 432 and 434.
이에 의해, 제 1 및 제 2 금속전극(432,434)이 단층으로 구비되면서도 도 2의 금속전극(232)에 비하여 더 넓은 면적에 걸쳐 물질의 이동을 억제할 수 있다. 즉, 제 1 및 제 2 금속전극(432,434)은 외부전극(140) 각각에 연결되고, 에어갭(436)을 통해서는 물질이 이동할 수 없기 때문에, 도 2의 금속전극(232)과 외부전극(140) 사이의 간격에 대응하는 면적만큼 넓게 형성되어 물질의 이동을 더욱 억제할 수 있다.As a result, the first and second metal electrodes 432 and 434 are provided as a single layer, and movement of the material over a wider area than that of the metal electrode 232 of FIG. 2 can be suppressed. That is, since the first and second metal electrodes 432 and 434 are connected to the respective outer electrodes 140 and the material can not move through the air gap 436, the metal electrode 232 and the outer electrode 140, so that the movement of the substance can be further suppressed.
이때, 제 1 및 제 2 금속전극(432,434) 및 에어갭(436)은 써프레서 구조이므로, 복합형 감전방지소자(400)는 바리스터부(110)와 병렬로 써프레서를 구비할 수 있다.Since the first and second metal electrodes 432 and 434 and the air gap 436 are of a supercritical structure, the composite anti-electrostatic device 400 may include a suppressor in parallel with the varistor portion 110.
이에 의해, 정전기(ESD)의 유입시 먼저 빠르게 동작하는 바리스터부(110)에 의해 정전기(ESD)의 전압을 클램핑하여 정전기 보호 동작을 수행하는데, 정전기의 양이 많거나 상대적으로 긴 시간동안 정전기가 인가되면, 추가적으로 제 1 및 제 2 금속전극(432,434)로 구성되는 써프레서에 의해 정전기(ESD)를 방전하여 유입된 정전기의 높은 에너지를 통과시킴으로써 보호소자의 정전기 보호 특성을 더욱 향상시킬 수 있다. Accordingly, when the ESD is introduced, the varistor unit 110, which operates quickly, first clamps the voltage of the ESD to perform the electrostatic protection operation. However, when the amount of static electricity is large or static electricity is generated for a relatively long time The ESD can be further discharged by the first and second metal electrodes 432 and 434, thereby allowing the ESD protection device to further enhance the electrostatic protection characteristics of the protection device.
한편, 본 발명의 제6실시예에 따른 복합형 감전방지소자(500)는 제 1 및 제 2 금속전극(532,534)이 수직으로 이격 배치될 수 있다.Meanwhile, the first and second metal electrodes 532 and 534 may be vertically spaced from each other in the composite type anti-skid device 500 according to the sixth embodiment of the present invention.
도 6에 도시된 바와 같이, 복합형 감전방지소자(500)는 차단층(530) 내에서 제 1 및 제 2 금속전극(532,534) 및 에어갭(536)을 포함할 수 있다. 6, the hybrid anti-static device 500 may include first and second metal electrodes 532 and 534 and an air gap 536 in the barrier layer 530. [
여기서, 제 1 및 제 2 금속전극(532,534)은 수직으로 이격되어 배치되고, 외부전극(140)에 각각 연결될 수 있다. 이때, 제 1 및 제 2 금속전극(532,534)은 일부가 중첩되게 배치될 수 있다. 또한, 제 1 및 제 2 금속전극(532,534)의 사이에는 에어갭(536)이 배치될 수 있다. Here, the first and second metal electrodes 532 and 534 may be vertically spaced apart and connected to the external electrode 140, respectively. At this time, the first and second metal electrodes 532 and 534 may be partially overlapped. In addition, an air gap 536 may be disposed between the first and second metal electrodes 532 and 534.
이에 의해, 제 1 및 제 2 금속전극(532,534)이 이층으로 구비되면서도 도 3의 금속전극(332,334)에 비하여 중첩되는 부분을 최소화함으로써, 적용되는 금속전극의 양을 감소시키므로 더 저비용으로 바리스터부(110)와 커패시터부(120) 사이의 물질 이동을 억제할 수 있다.Accordingly, since the first and second metal electrodes 532 and 534 are provided in two layers and the overlapped portion is minimized compared to the metal electrodes 332 and 334 of FIG. 3, the amount of the applied metal electrode is reduced, 110 and the capacitor unit 120 can be suppressed.
이때, 제 1 및 제 2 금속전극(532,534) 및 에어갭(536)은 써프레서 구조이므로, 복합형 감전방지소자(500)는 바리스터부(110)와 병렬로 써프레서를 구비할 수 있다.Since the first and second metal electrodes 532 and 534 and the air gap 536 are of a supercell structure, the composite anti-static device 500 may include a suppressor in parallel with the varistor portion 110.
이에 의해, 정전기(ESD)의 유입시 먼저 빠르게 동작하는 바리스터부(110)에 의해 정전기(ESD)의 전압을 클램핑하여 정전기 보호 동작을 수행하는데, 정전기의 양이 많거나 상대적으로 긴 시간동안 정전기가 인가되면, 추가적으로 써프레서에 의해 정전기(ESD) 방전을 통해 높은 에너지를 통과시킴으로써 보호소자의 정전기 보호 특성을 더욱 향상시킬 수 있다. Accordingly, when the ESD is introduced, the varistor unit 110, which operates quickly, first clamps the voltage of the ESD to perform the electrostatic protection operation. However, when the amount of static electricity is large or static electricity is generated for a relatively long time When applied, the electrostatic protection characteristic of the protection device can be further improved by passing high energy through the electrostatic discharge (ESD) by the supercrelector.
이와 같은 복합형 감전방지소자(100,200,300,300',400,500)는 휴대용 전자 장치에서, 외장 메탈케이스와 같은 전도체와 회로부 사이를 전기적으로 연결하도록 배치될 수 있다. 이때, 복합형 감전방지소자(100,200,300,300',400,500)는 회로부의 접지에 직접 연결되어 바리스터부(110)의 턴온에 의해 유입되는 정전기를 회로부로 전달하지 않고 접지로 바이패스시킬 수 있다. Such a composite type of anti-electrostatic device (100, 200, 300, 300 ', 400, 500) may be arranged to electrically connect a conductor such as an external metal case and a circuit part in a portable electronic device. At this time, the hybrid type anti-electrostatic devices 100, 200, 300, 300 ', 400, and 500 are directly connected to the ground of the circuit part so that the static electricity introduced by turning on the varistor part 110 can be bypassed to the ground without transmitting to the circuit part.
선택적으로, 복합형 감전방지소자(100,200,300,300',400,500)가 회로부의 접지에 직접 연결되지 않은 경우, 즉, 전도체와 회로부를 전기적으로 연결하여 정전기를 통과시키기만 하는 경우, 휴대용 전자장치는 정전기를 접지로 바이패스하기 위한 별도의 보호소자를 구비할 수 있다. 이러한 보호소자는 단일 소자로 이루어진 써프레서 또는 바리스터일 수 있다. Alternatively, when the hybrid anti-electrostatic elements 100, 200, 300, 300 ', 400, 500 are not directly connected to the ground of the circuitry, that is, they only electrically connect the conductor and circuitry to pass static electricity, It is possible to provide a separate protection element for bypassing the memory cell. Such a protection element may be a single element, a suppressor or a varistor.
이와 같이, 복합형 감전방지소자(100,200,300,300',400,500)는 전도체로부터 정전기가 유입되는 경우, 바리스터부(110)의 턴온에 의해 정전기를 통과시킬 수 있다. 즉, 복합형 감전방지소자(100,200,300,300',400,500)는 그 항복전압(Vbr)이 정전기의 순간 전압보다 작기 때문에, 전기적으로 도통되어 정전기를 통과시킬 수 있다. 결과적으로, 복합형 감전방지소자(100,200,300,300',400,500)는 메탈 케이스와 같은 전자기기의 외부 전도체로부터 정전기 유입시에는 전기적 저항이 낮아져 정전기를 통과시키고, 정전기가 더 이상 유입되지 않으면 다시 원상태로 복귀하여 전도체와 회로부를 오픈 상태로 유지할 수 있다.As described above, when the static electricity flows from the conductor, the composite type anti-electric devices 100, 200, 300, 300 ', 400, and 500 can pass the static electricity by turning on the varistor part 110. That is, since the breakdown voltage (Vbr) of the composite-type electric-shock- resistant devices 100, 200, 300, 300 ', 400, 500 is smaller than the instantaneous voltage of the static electricity, the electric- As a result, when the static electricity is introduced from an external conductor of an electronic device such as a metal case, the electric shock resistance of the composite type electric shock protection device 100, 200, 300, 300 ', 400 or 500 is lowered so that static electricity passes therethrough. The conductor and the circuit portion can be kept open.
이때, 복합형 감전방지소자(100,200,300,300',400,500) 내에 구비된 커패시터부(120)는 그 절연파괴 전압(Vcp)이 바리스터부(110)의 항복전압(Vbr)보다 크기 때문에, 정전기는 커패시터부(120)로 유입되지 않고, 바리스터부(110)로만 통과될 수 있다.At this time, since the dielectric breakdown voltage Vcp of the capacitor part 120 provided in the hybrid type anti-electric devices 100, 200, 300, 300 ', 400 and 500 is larger than the breakdown voltage Vbr of the varistor part 110, 120, but can only pass through the varistor portion 110. [
또한, 복합형 감전방지소자(100,200,300,300',400,500)는 회로부의 접지로부터 외부전원의 누설전류가 유입되는 경우, 바리스터부(110)의 턴오프 및 커패시터부(120)에 의해 누설전류가 전도체로 전달되지 않도록 차단될 수 있다. When the leakage current of the external power source flows from the ground of the circuit part, the composite type anti-electrostatic devices 100, 200, 300, 300 ', 400 and 500 transmit the leakage current to the conductor by the turn-off of the varistor part 110 and the capacitor part 120 .
즉, 회로부의 회로기판, 예를 들면, 접지를 통하여 외부전원의 누설전류가 전도체로 유입되는 경우, 복합형 감전방지소자(100,200,300,300',400,500)는 그 항복전압(Vbr)이 누설전류에 의한 과전압에 비하여 크기 때문에, 오픈 상태로 유지될 수 있다. 환원하면, 복합형 감전방지소자(100,200,300,300',400,500)는 그의 항복전압(Vbr)이 휴대용 전자장치의 외부전원의 정격전압보다 크기 때문에, 전기적으로 도통되지 않고 오픈 상태를 유지하여 메탈 케이스 등과 같은 인체접촉 가능한 전도체로 누설전류가 전달되는 것을 차단할 수 있다. That is, when the leakage current of the external power source flows into the conductor through the circuit board of the circuit part, for example, the ground, the composite type anti-skid devices 100, 200, 300, 300 ', 400 and 500 are arranged such that the breakdown voltage Vbr thereof is the overvoltage It can be kept open. The composite type anti-electrostatic elements 100, 200, 300, 300 ', 400, and 500 are maintained in an open state without being electrically conducted because the breakdown voltage Vbr thereof is larger than the rated voltage of the external power source of the portable electronic device, It is possible to prevent the leakage current from being transmitted to the contactable conductor.
이때, 복합형 감전방지소자(100,200,300,300',400,500) 내에 구비된 커패시터부(120)는 누설전류에 포함된 DC 성분을 차단할 수 있고, 아울러, 누설 전류의 AC 성분이 무선통신 대역에 비하여 상대적으로 낮은 주파수를 갖기 때문에, 해당 주파수에 대하여 큰 임피던스로 작용함으로써 누설전류를 차단할 수 있다.At this time, the capacitor unit 120 provided in the hybrid type anti-electrostatic devices 100, 200, 300, 300 ', 400, and 500 can block the DC component included in the leakage current, and the AC component of the leakage current is relatively low Frequency, it is possible to block the leakage current by acting with a large impedance with respect to the frequency.
결과적으로, 복합형 감전방지소자(100,200,300,300',400,500)는 회로부의 접지로부터 유입되는 외부전원에 의한 누설전류를 차단하여 사용자를 감전으로부터 보호할 수 있다.As a result, the hybrid type anti-electrostatic devices 100, 200, 300, 300 ', 400, and 500 can shield the user from the electric shock by blocking the leakage current due to the external power source flowing from the ground of the circuit part.
또한, 복합형 감전방지소자(100,200,300,300',400,500)는 전도체가 안테나의 일부로 구성되는 경우, 전도체를 통해 유입되는 통신 신호를 커패시터부(120)에 의해 통과시킬 수 있다. 이때, 바리스터부(110,210)는 턴오프되어 복합형 감전방지소자(100,200,300,300',400,500)는 커패시터로서 기능할 수 있다. Also, in the case where the conductor is constituted as a part of the antenna, the composite type electric shock protection device 100, 200, 300, 300 ', 400, 500 may allow a communication signal flowing through the conductor to pass by the capacitor part 120. At this time, the varistors 110 and 210 are turned off, so that the hybrid anti-skid devices 100, 200, 300, 300 ', 400 and 500 can function as a capacitor.
즉, 복합형 감전방지소자(100,200,300,300',400,500)는 바리스터부(110,210)가 오픈 상태로 유지되어 전도체와 회로부를 차단하지만, 내부의 커패시터부(120)가 유입된 통신 신호를 통과시킬 수 있다. 이와 같이, 복합형 감전방지소자(100,200,300,300',400,500)의 커패시터부(120)는 통신 신호의 유입 경로를 제공할 수 있다. That is, the comb-type anti-electric devices 100, 200, 300, 300 ', 400, and 500 may keep the varistors 110 and 210 open to shut off the conductor and the circuit, but pass the communication signal through the capacitor 120. As described above, the capacitor portion 120 of the hybrid type anti-electrostatic devices 100, 200, 300, 300 ', 400, and 500 can provide the inflow path of the communication signal.
여기서, 상기 휴대용 전자장치는 휴대가 가능하고 운반이 용이한 휴대용 전자기기의 형태일 수 있다. 일례로, 상기 휴대용 전자장치는 스마트폰, 셀룰러폰 등과 같은 휴대단말기일 수 있으며, 스마트 워치, 디지털 카메라, DMB 단말, 전자책, 넷북, 태블릿 PC, 휴대용 컴퓨터 등일 수 있다. 이러한 전자장치들은 외부기기와의 통신을 위한 안테나 구조들을 포함하는 임의의 적절한 전자 컴포넌트들을 구비할 수 있다. 더불어, 와이파이(WiFi) 및 블루투스와 같은 근거리 네트워크 통신을 사용하는 기기일 수 있다. Here, the portable electronic device may be in the form of a portable electronic device that is portable and portable. For example, the portable electronic device may be a portable terminal such as a smart phone, a cellular phone, and the like, and may be a smart watch, a digital camera, a DMB terminal, an electronic book, a netbook, a tablet PC, Such electronic devices may comprise any suitable electronic components including antenna structures for communication with external devices. In addition, it may be a device using local area network communication such as WiFi and Bluetooth.
이와 같은 휴대용 전자장치는 금속(알루미늄, 스테인리스 스틸 등)과 같은 도전성 재료들, 또는 탄소-섬유 합성 재료 또는 기타 섬유 계열 합성물들, 유리, 세라믹, 플라스틱 및 이들을 조합한 재료로 이루어진 외부 하우징을 포함할 수 있다. Such a portable electronic device includes an outer housing made of conductive materials such as metal (aluminum, stainless steel, etc.) or carbon-fiber synthetic material or other fiber-based composites, glass, ceramic, plastic and combinations thereof .
이때, 휴대용 전자장치의 하우징은 금속으로 이루어지고 외부로 노출되는 전도체를 포함할 수 있다. 여기서, 상기 전도체는 상기 전자장치와 외부기기의 통신을 위한 안테나, 메탈 케이스, 및 도전성 장신구 중 적어도 하나를 포함할 수 있다.At this time, the housing of the portable electronic device may include a conductor made of metal and exposed to the outside. Here, the conductor may include at least one of an antenna for communication between the electronic device and the external device, a metal case, and conductive ornaments.
특히, 상기 메탈 케이스는 상기 휴대용 전자장치의 하우징의 측부를 부분적으로 둘러싸거나 전체적으로 둘러싸도록 구비될 수 있다. 또한, 상기 메탈 케이스는 상기 전자장치의 하우징의 전면 또는 후면에 외부로 노출되도록 구비되는 카메라를 둘러싸도록 구비될 수 있다.In particular, the metal case may be provided to partially surround or partially surround the side of the housing of the portable electronic device. In addition, the metal case may be provided to surround the camera, which is exposed to the outside on the front surface or the rear surface of the housing of the electronic device.
여기서, 복합형 감전방지소자(100,200,300,300',400,500)는 상기 휴대용 전자장치의 하우징에 구비되는 메탈 케이스의 개수에 맞춰 적절하게 구비될 수 있다. 다만, 상기 메탈 케이스가 복수 개로 구비되는 경우 각각의 메탈 케이스는 모두 복합형 감전방지소자(100,200,300,300',400,500)가 개별적으로 연결되도록 상기 휴대용 전자장치의 하우징에 내장될 수 있다.Here, the hybrid anti-shock devices 100, 200, 300, 300 ', 400, and 500 may be suitably provided in accordance with the number of metal cases provided in the housing of the portable electronic device. However, when a plurality of metal cases are provided, each of the metal cases may be embedded in the housing of the portable electronic device so that the combined type anti-electrostatic devices 100, 200, 300, 300 ', 400, and 500 are individually connected.
아울러, 복합형 감전방지소자(100,200,300,300',400,500)는 메탈 케이스와 회로기판 사이를 연결하거나, 안테나인 메탈 케이스와 FFM(front End Module) 사이에서 정합회로(예를 들면, R 및 L 성분)를 통하여 배치되거나, 안테나가 구비된 메탈 케이스와 해당 안테나를 통한 통신 기능을 구현하는 IC 사이에 배치되거나, PIFA(Planar Inverted F Antenna) 안테나의 쇼트 핀(short pin)과 매칭회로 사이에 배치될 수 있다. In addition, the hybrid type anti-electrostatic devices 100, 200, 300, 300 ', 400, and 500 may be used to connect a metal case to a circuit board or to provide a matching circuit (for example, R and L components) between a metal case and an FFM Or between the metal case with the antenna and the IC implementing the communication function through the antenna, or may be disposed between the short pin of the PIFA (Planar Inverted F Antenna) antenna and the matching circuit .
또한, 상기 전도체는 도전성 케이스에서 외측으로 돌출 형성되는 첨단부를 포함할 수 있다. 일례로, 상기 전도체는 사이드 키를 포함할 수 있다. 아울러, 상기 첨단부는 외부 기기와 연결을 위한 커넥터의 삽입구, 일례로, 이어폰, 충전 케이블, 데이터 케이블 등이 삽입되는 커넥터의 삽입구의 일단을 포함할 수 있다.Further, the conductor may include a tip portion protruding outward from the conductive case. In one example, the conductor may include a side key. The distal end portion may include one end of a connector insertion port into which a connector, for example, an earphone, a charging cable, a data cable, or the like, is inserted.
즉, 본 발명의 실시예에 따른 복합형 감전방지소자(100,200,300,300',400,500)는 정전기의 유입 가능성이 높은 외부로 돌출된 부분이나 뾰족한 형상을 갖는 부분과 회로부를 연결하는 경우, 정전기(ESD)에 대한 높은 응답특성 및 고용량 커패시턴스를 동시에 구현할 수 있다. That is, in the case of connecting the circuit portions to the outwardly protruding portion or the pointed portion, which is highly likely to enter the static electricity, the composite type electric shock protection devices 100, 200, 300, 300 ', 400 and 500 according to the embodiment of the present invention, A high response characteristic and a high capacity capacitance can be realized at the same time.
이상에서 본 발명의 일 실시예에 대하여 설명하였으나, 본 발명의 사상은 본 명세서에 제시되는 실시 예에 제한되지 아니하며, 본 발명의 사상을 이해하는 당업자는 동일한 사상의 범위 내에서, 구성요소의 부가, 변경, 삭제, 추가 등에 의해서 다른 실시 예를 용이하게 제안할 수 있을 것이나, 이 또한 본 발명의 사상범위 내에 든다고 할 것이다.While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (13)

  1. 복수 개의 바리스터 물질층, 어느 하나의 바리스터 물질층에 구비된 적어도 두 개의 제1내부전극 및 다른 하나의 바리스터 물질층에 구비된 적어도 하나의 제2내부전극을 포함하는 바리스터부; A varistor portion including at least two first inner electrodes provided in one of the varistor material layers and at least one second inner electrode provided in the other varistor material layer;
    복수 개의 유전체 시트층 및 상기 각 유전체 시트층 상에 구비되는 복수 개의 커패시터 전극을 포함하는 커패시터부; A capacitor portion including a plurality of dielectric sheet layers and a plurality of capacitor electrodes provided on the dielectric sheet layers;
    상기 바리스터부와 상기 커패시터부 사이에 배치되는 차단층; 및 A barrier layer disposed between the varistor part and the capacitor part; And
    상기 바리스터부와 상기 커패시터부의 양측에 구비되어 상기 복수 개의 커패시터 전극, 상기 제1내부전극, 또는 상기 제2내부전극에 연결되는 한 쌍의 외부단자;를 포함하고, And a pair of external terminals provided on both sides of the varistor portion and the capacitor portion and connected to the plurality of capacitor electrodes, the first internal electrode, or the second internal electrode,
    상기 바리스터부, 상기 커패시터부 및 상기 차단층은 그린 시트 상태로 적층되어 동시 소성되며, The varistor portion, the capacitor portion, and the barrier layer are stacked and co-fired in a green sheet state,
    상기 차단층은 ZrO3을 주성분으로 하고, 상기 커패시터부 및 상기 바리스터부의 수축률 제어를 위해 ZnO가 함유되는 절연체인 복합형 감전방지소자.The barrier layer is mainly composed of ZrO 3, wherein the capacitor section and the hybrid electric shock prevention insulator containing ZnO for shrinkage control the varistor device portion.
  2. 제1항에 있어서, The method according to claim 1,
    상기 차단층은 상기 바리스터부와 상기 커패시터부 사이의 물질이동을 차단하는 복합형 감전방지소자.Wherein the barrier layer blocks mass transfer between the varistor part and the capacitor part.
  3. 제1항에 있어서, The method according to claim 1,
    상기 절연체는 ZnO이 0.5~1.5 wt% 함유되는 복합형 감전방지소자.Wherein the insulator contains 0.5 to 1.5 wt% of ZnO.
  4. 제1항에 있어서, The method according to claim 1,
    상기 차단층은 금속전극을 더 포함하는 복합형 감전방지소자.Wherein the barrier layer further comprises a metal electrode.
  5. 제4항에 있어서,5. The method of claim 4,
    상기 금속전극은 상기 한 쌍의 외부전극과 연결되지 않는 복합형 감전방지소자.Wherein the metal electrode is not connected to the pair of external electrodes.
  6. 제4항에 있어서,5. The method of claim 4,
    상기 금속전극은, The metal electrode
    상기 한 쌍의 외부전극 중 어느 하나에 연결되는 제1전극; 및 A first electrode connected to one of the pair of external electrodes; And
    상기 한 쌍의 외부전극 중 다른 하나에 연결되며 상기 제1전극과 일정간격 이격되어 배치되는 제2전극을 포함하는 복합형 감전방지소자.And a second electrode connected to the other one of the pair of external electrodes and spaced apart from the first electrode by a predetermined distance.
  7. 제6항에 있어서, The method according to claim 6,
    상기 제1전극 및 상기 제2전극은 수직으로 배치되거나 동일 평면 상에 배치되는 복합형 감전방지소자.Wherein the first electrode and the second electrode are arranged vertically or coplanarly.
  8. 제6항에 있어서, The method according to claim 6,
    상기 절연체는 상기 제1전극과 상기 제2전극 사이에 에어갭을 포함하는 복합형 감전방지소자.Wherein the insulator includes an air gap between the first electrode and the second electrode.
  9. 제1항에 있어서, The method according to claim 1,
    상기 바리스터 물질층은 ZnO를 주성분으로 Zr, Nb, Pr, Bi, Co. Si, Cr, 및 Mn의 산화물 중 적어도 1종 이상을 포함하고, The varistor material layer includes ZnO as a main component, Zr, Nb, Pr, Bi, Co. At least one or more oxides of Si, Cr, and Mn,
    상기 유전체 시트층은 BaTiO3을 주성분으로, Ti, Si, Sr, Bi, W, 및 Nd의 산화물 중 적어도 1종 이상을 포함하는 복합형 감전방지소자.Wherein the dielectric sheet layer comprises BaTiO 3 as a main component and at least one or more oxides of Ti, Si, Sr, Bi, W, and Nd.
  10. 제1항에 있어서, The method according to claim 1,
    상기 커패시터 전극, 상기 제1내부전극, 및 상기 제2내부전극은 Ag, Pd, Pt, Au, Ni, 및 Cu 중 적어도 1종 이상을 포함하는 복합형 감전방지소자.Wherein the capacitor electrode, the first internal electrode, and the second internal electrode include at least one of Ag, Pd, Pt, Au, Ni, and Cu.
  11. 제1항에 있어서, The method according to claim 1,
    상기 커패시터 전극 사이의 거리는 20㎛ 이상인 복합형 감전방지소자. And the distance between the capacitor electrodes is 20 占 퐉 or more.
  12. 도전성 케이스에서 외측으로 돌출 형성되는 첨단부를 포함하는 전도체; A conductor including a tip portion protruding outward from the conductive case;
    회로부; 및 Circuitry; And
    상기 전도체와 회로부를 전기적으로 연결하는 청구항 1 내지 청구항 11 중 어느 한 항에 기재된 복합형 감전방지소자를 포함하는 휴대용 전자장치. The portable electronic device according to any one of claims 1 to 11, which electrically connects the conductor and the circuit portion.
  13. 제12항에 있어서,13. The method of claim 12,
    상기 전도체는 사이드 키를 포함하거나, The conductor includes a side key,
    상기 첨단부는 외부 기기와 연결을 위한 커넥터의 삽입구의 일단을 포함하는 휴대용 전자장치. And the tip portion includes one end of an insertion port of a connector for connection with an external device.
PCT/KR2018/008470 2017-08-07 2018-07-26 Complex-type electric shock prevention device and portable electronic device having same WO2019031738A1 (en)

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Citations (5)

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Publication number Priority date Publication date Assignee Title
JPH06325979A (en) * 1993-05-11 1994-11-25 Murata Mfg Co Ltd Composite electronic part
JPH0982568A (en) * 1995-09-19 1997-03-28 Murata Mfg Co Ltd Ceramic electronic component
KR20130033355A (en) * 2010-02-10 2013-04-03 에프코스 아게 Ceramic multilayer component
KR101598644B1 (en) * 2008-04-16 2016-02-29 에프코스 아게 Multi-layered component
KR101760877B1 (en) * 2016-07-27 2017-07-24 주식회사 모다이노칩 Complex component and electronic device having the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06325979A (en) * 1993-05-11 1994-11-25 Murata Mfg Co Ltd Composite electronic part
JPH0982568A (en) * 1995-09-19 1997-03-28 Murata Mfg Co Ltd Ceramic electronic component
KR101598644B1 (en) * 2008-04-16 2016-02-29 에프코스 아게 Multi-layered component
KR20130033355A (en) * 2010-02-10 2013-04-03 에프코스 아게 Ceramic multilayer component
KR101760877B1 (en) * 2016-07-27 2017-07-24 주식회사 모다이노칩 Complex component and electronic device having the same

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