WO2019024193A1 - 一种掩膜板 - Google Patents

一种掩膜板 Download PDF

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Publication number
WO2019024193A1
WO2019024193A1 PCT/CN2017/102584 CN2017102584W WO2019024193A1 WO 2019024193 A1 WO2019024193 A1 WO 2019024193A1 CN 2017102584 W CN2017102584 W CN 2017102584W WO 2019024193 A1 WO2019024193 A1 WO 2019024193A1
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WO
WIPO (PCT)
Prior art keywords
reflectance
mask
layer
pattern layer
alignment region
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PCT/CN2017/102584
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English (en)
French (fr)
Inventor
蒋谦
陈永胜
Original Assignee
武汉华星光电半导体显示技术有限公司
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Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Priority to US15/736,329 priority Critical patent/US20190044068A1/en
Publication of WO2019024193A1 publication Critical patent/WO2019024193A1/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Definitions

  • the present invention relates to the field of organic electroluminescence display technology, and in particular to a mask.
  • Organic light-emitting diode (OLED) displays have the advantages of self-luminous, thin thickness, light weight, fast response, wide viewing angle, rich color, high brightness, low power consumption, high temperature resistance, etc., widely used in mobile phones, watches, computers, televisions. Machine and other products.
  • the production of organic light-emitting diodes generally adopts vacuum real-plating technology, that is, heating organic/metal materials in a vacuum environment, the materials are sublimated by heat, and a certain shape of organic/metal thin film is formed on the surface of the substrate through a mask having a special pattern, and undergoes Continuous deposition of a plurality of materials into a film forms an OLED structure having a multilayer film, ultimately forming an OLED display.
  • the mask and the substrate need to be aligned to ensure that the formed pattern meets the requirements of process precision.
  • the alignment area on the mask is irradiated by light, and then the alignment system of the true plating machine is used. Obtaining the picture sharpness of the alignment mark on the alignment area to align the mask.
  • the reflectivity of the mask to the illumination determines the sharpness of the alignment mark, which further determines the The accuracy of the bit mark.
  • the invention mainly provides a mask board, which aims to solve the problem that the light source strength or the screen contrast needs to be adjusted when the different types of mask sheets are aligned after the switching in the same production line, thereby increasing the manual adjustment operation and reducing the production efficiency.
  • the present invention adopts a technical solution to provide a mask, wherein the mask includes a aligning area for obtaining a preset reflection under a certain intensity of illumination. Rateing the alignment; performing a reflection process on the alignment region such that the mask has a reflectance in the same range as the predetermined reflectance; wherein the predetermined reflectance is at the certain The reflectivity of a particular material under intensity illumination; the mask is a metal mask.
  • another technical solution adopted by the present invention is to provide a mask board, wherein the mask board includes a aligning area for obtaining a preset under a certain intensity of illumination.
  • the reflectance is aligned; the alignment region is subjected to a reflection process such that the mask has a reflectance in the same range as the predetermined reflectance.
  • the present invention performs reflection processing on the alignment area of the mask, so that the mask has the same range of reflectance as the preset reflectance, thereby making different types
  • the mask is aligned, it is not necessary to adjust the intensity of the light source or the contrast of the screen to obtain the same picture resolution suitable for the corresponding mask, which reduces the manual adjustment work and improves the production efficiency.
  • FIG. 1 is a schematic structural view of an embodiment of a mask provided by the present invention.
  • Figure 2 is a schematic view of the alignment area of the mask of Figure 1 in the alignment position
  • FIG. 3 is a schematic cross-sectional view of the first type of mask in FIG. 1 after reflection treatment
  • FIG. 4 is a schematic cross-sectional view of the second type of mask in FIG. 1 after reflection treatment
  • FIG. 5 is a schematic cross-sectional view of the third type of mask in FIG. 1 after reflection treatment.
  • a mask embodiment provided by the present invention includes a registration area 101.
  • the mask board includes a mask body 10, and the metal mask board is taken as an example.
  • the mask body 10 is a metal foil and is fixed on the metal frame 11.
  • the mask body 10 is provided with four alignment areas. 101, and each of the alignment areas 101 is provided with an alignment mark 102. Further, the mask body 10 is further provided with a pattern opening area 103.
  • the alignment mark 102 is a circular through hole.
  • the light emitted by the light source illuminates the alignment area 101 and the alignment mark 102 on the alignment area 101 and the alignment mark 104 on the substrate are obtained by the alignment system. These alignment marks are acquired by the alignment system at the appropriate picture resolution to align the mask.
  • the alignment area 101 in this embodiment is used to obtain a preset reflectance under illumination to perform alignment.
  • the alignment region 101 is subjected to reflection processing so that the mask has a reflectance in the same range as the preset reflectance.
  • the preset reflectance is a reflectance of a specific material under a certain intensity of illumination, that is, the reflectance range obtained by the alignment 101 of the mask in the embodiment is the same as the reflectance range of the specific material.
  • the specific material is an iron-nickel alloy.
  • the first type of mask is a metal mask of a single layer structure, including a first pattern layer 20, the first pattern layer 20 is provided with a aligning area 201, and the aligning area 201 is provided with a pair
  • the first pattern layer 20 is further provided with a plurality of pattern opening regions 203.
  • the manner of performing the reflection processing on the alignment region 201 of the first type of mask is specifically: forming a first material using a specific material.
  • the reflectance obtained by the pattern layer 20 and the alignment region 201 under the illumination as shown in the figure is the reflectivity of the specific material, thereby ensuring that the mask has the same range of reflection under the illumination as the specific material. rate.
  • the first type of mask is an etched precision metal mask that can be used to prepare a low resolution OLED display.
  • the etched precision metal mask is based on a metal foil and undergoes chemical etching.
  • the surface of the metal foil is patterned to form a mask.
  • the material of the metal foil is an iron-nickel alloy, that is, the first pattern layer 20 is an iron-nickel alloy layer, and the reflectance obtained by the alignment region 201 under illumination is iron.
  • the reflectivity of a nickel alloy that is, the reflectivity of a particular material.
  • the second type of mask is a metal mask of a multi-layer structure, and includes a second pattern layer 30.
  • the second pattern layer 30 is provided with a aligning area 301, and the aligning area 301 is provided with a aligning layer.
  • the first pattern layer 30 is further provided with a plurality of pattern opening regions 303.
  • the manner in which the alignment region 301 of the second type mask is subjected to reflection processing is specifically: on the second pattern layer 30.
  • the first material layer 304 covering the alignment region 301 is formed such that the alignment region 301 obtains a reflectance in the same range as the preset reflectance under illumination.
  • the method may include two types.
  • the first one is: forming a first material layer 304 covering the alignment region 301 on the second pattern layer 30 by using a specific material, that is, the first material layer 304 is a specific material layer,
  • the reflectance obtained by the bit area 301 under illumination as shown in the figure is the reflectivity of the specific material, wherein the coverage of the first material layer 304 may be only covering the corresponding position of the alignment area 301, or may be a cover pair.
  • the second type is: when the reflectivity of the second pattern layer 30 is greater than the reflectivity of the specific material, the silicon nitride material is used in the second pattern layer
  • a first material layer 304 covering the alignment region 301 is formed on 30, that is, the first material layer 304 is a silicon nitride layer, so that the alignment region 301 obtains a mixed reflection of the second pattern layer 30 and the silicon nitride layer under illumination.
  • the silicon nitride in the embodiment has a translucent property, and the reflectance of the second pattern layer 30 can be reduced under illumination.
  • the second pattern layer 30 can be determined by controlling the thickness of the silicon nitride layer according to actual conditions. The degree of decrease in reflectivity, resulting in a lower Reflectivity with a preset range of the same reflectance, and therefore, the reflectance of the mixed bit area 301 obtained with a preset range of the same reflectance.
  • the second type of mask is an electroformed precision metal mask capable of preparing a medium and high resolution OLED display
  • the electroforming precision metal mask is made of a metal foil as a body, through photoresist coating, exposure and After developing and energizing the metal foil in the chemical tank, a pattern is formed on the surface of the metal foil to form a mask.
  • the material of the metal foil is nickel-cobalt alloy, that is, the second pattern layer 30 is nickel-cobalt alloy.
  • the layer is made of an iron-nickel alloy as a specific material, and an iron-nickel alloy layer covering the alignment region 301 is formed on the nickel-cobalt alloy layer, and the composition ratio of the formed iron-nickel alloy layer is the same as that of the specific material of the iron-nickel alloy.
  • the reflectance obtained by the alignment region under illumination is the reflectance of the iron-nickel alloy; and since the reflectance of the nickel-cobalt alloy is greater than that of the iron-nickel alloy, it is also possible to form a layer on the nickel-cobalt alloy layer as described above.
  • the silicon nitride layer is used to reduce the reflectance of the nickel-cobalt alloy layer such that the reflectance obtained by the alignment region 301 under illumination is the same as the preset reflectance range.
  • the silicon nitride layer has a thickness of 10 angstroms to 9000 nanometers.
  • the third type of mask includes a third pattern layer 40 and a second material layer 41.
  • the second material layer 41 is provided with a matching area 401, and the alignment area 401 is provided with a registration mark 402.
  • a pattern opening area 403 is further provided, wherein the reflecting area 401 of the third type mask is subjected to reflection processing in a specific manner: the third pattern layer 40 is formed by using a specific material, and the corresponding position of the alignment area 401 is removed.
  • the second material layer 41 exposes the third pattern layer 40, that is, the portion shown by the broken line in FIG. 5 is removed, and the reflectance obtained by the alignment region 401 under illumination is the reflectance of the third pattern layer 40, that is, the specific material. Reflectivity.
  • the third type of mask is a hybrid precision metal mask
  • the hybrid precision metal mask can be used to prepare medium and high resolution OLED displays
  • the hybrid precision metal mask forms a polymerization on the metal foil.
  • the film is formed on the metal foil and the polymer film by chemical or laser opening to form a mask.
  • the iron-nickel alloy is used as a specific material
  • the metal foil of the hybrid precision metal mask can be used.
  • the iron-nickel alloy is used, that is, the third pattern layer 40 is an iron-nickel alloy layer, and the polymer film is the second material layer 41. After the polymer film at the corresponding position of the alignment region 401 is removed, the alignment region 401 is illuminated.
  • the reflectance obtained below is the reflectance of the iron-nickel alloy, that is, the reflectance of a specific material.
  • the same production line prepares OLED displays of different resolutions, and different types of masks to be used are used in the above three types of etching precision metal masks, electroforming precision metal masks and hybrid precision metals.
  • the first pattern layer of the precision metal mask can be etched into a specific material layer, that is, an iron-nickel alloy layer.
  • the intensity of the light source is adjusted according to the reflectance of the iron-nickel alloy to obtain a suitable one.
  • the picture clarity, further, the electroforming precision metal mask and the hybrid precision metal mask are reflected by the above method, and need to be switched to the electroforming precision metal mask or the hybrid precision metal mask.
  • the film is formed, the same picture definition as that of the etching precision metal mask can be obtained, and the image definition of the alignment area suitable for the electroforming precision metal mask and the hybrid precision metal mask can be obtained.
  • the present invention performs reflection processing on the alignment area of the mask, so that the mask has the same range of reflectance as the preset reflectance, and thus, when different types of masks are aligned, It is also possible to obtain the same picture resolution suitable for the corresponding mask without adjusting the intensity of the light source or the contrast of the picture, which reduces manual work and improves production efficiency.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
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Abstract

一种掩膜板，掩膜板包括对位区(101)，对位区(101)用于在一定强度光照下获得预设反射率以进行对位；对对位区(101)进行反射处理，以使得掩膜板具有与预设反射率相同范围的反射率。通过这种反射处理，使得不同类型的掩膜板在对位时，不需要调整光源强度或画面对比度也能获得相同且适合相应掩膜板的画面清晰度，减少了人工作业，提高了生产效率。

Description

一种掩膜板
【技术领域】
本发明涉及有机电致发光显示技术领域，特别是涉及一种掩膜板。
【背景技术】
有机发光二极管(OLED)显示器具有自主发光、厚度薄、重量轻、响应速度快、视角广、色彩丰富以及高亮度、低功耗、耐高低温等优点，广泛应用于手机、手表、电脑、电视机等产品中。有机发光二极管的制作一般采用真空真镀技术，即在真空环境中加热有机/金属材料，材料受热升华，通过具有特殊图案的掩膜板，在基板表面形成具有一定形状的有机\金属薄膜，经历多种材料的连续沉积成膜，即可形成具有多层薄膜的OLED结构，最终形成OLED显示器。在这一过程中，需要先对掩膜板和基板进行对位以保证形成的图案符合工艺精度的要求，一般采用光照射掩膜板上的对位区，然后由真镀机台的对位系统获取对位区上的对位标记的画面清晰度以对掩膜板进行对位，在对位过程中，掩膜板对光照的反射率决定了对位标记的画面清晰度，进一步决定了对位标记的获取准确性。
在生产OLED显示器的过程中，对于不同分辨率的OLED显示器需要使用不同类型的掩膜板，而在同一生产线生产不同分辨率的OLED显示器时，就需要根据OLED显示器分辨率的不同切换对应的掩膜板，进而需要对切换后的掩膜板进行对位。
现有技术中，在同一生产线中，对于不同类型的掩膜板在切换之后进行对位的过程中，由于不同类型的掩膜板的材质不同，对光的反射率也不同，为了保证对位精确，需要根据不同的反射率人为的调整光源强度或画面对比度，以便获取适合每一类型掩膜板相应的对位标记的画面清晰度，增加了人力调整作业，降低了生产效率。
【发明内容】
本发明主要提供一种掩膜板，旨在解决同一生产线中，不同类型的掩膜板在切换之后进行对位时需要调整光源强度或画面对比度而增加人力调整作业、降低生产效率的问题。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种掩膜板，其中，所述掩膜板包括对位区，所述对位区用于在一定强度光照下获得预设反射率以进行对位；对所述对位区进行反射处理，以使得所述掩膜板具有与所述预设反射率相同范围的反射率；其中，所述预设反射率为在所述一定强度光照下特定材料的反射率；所述掩膜板为金属掩膜板。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种掩膜板，其中，所述掩膜板包括对位区，所述对位区用于在一定强度光照下获得预设反射率以进行对位；对所述对位区进行反射处理，以使得所述掩膜板具有与所述预设反射率相同范围的反射率。
本发明的有益效果是：区别于现有技术的情况，本发明通过对掩膜板的对位区进行反射处理，使得掩膜板具有与预设反射率相同范围的反射率，进而使得不同类型的掩膜板在对位时，不需要调整光源强度或画面对比度也能获得相同且适合相应掩膜板的画面清晰度，减少了人工调整作业，提高了生产效率。
【附图说明】
图1是本发明提供的掩膜板实施例的结构示意图；
图2是图1中掩膜板在对位时对位区的示意图；
图3是图1中第一类掩膜板反射处理后的截面示意图；
图4是图1中第二类掩膜板反射处理后的截面示意图；
图5是图1中第三类掩膜板反射处理后的截面示意图。
【具体实施方式】
为使本领域的技术人员更好地理解本实用新型的技术方案，下面结合附图和具体实施方式对本实用新型所提供的一种掩膜板做进一步详细描述。
参阅图1，本发明提供的掩膜板实施例包括对位区101。
具体地，掩膜板包括掩膜板本体10，以金属掩膜板为例，掩膜板本体10为金属薄片，固定于金属框架11上，掩膜板本体10上设有四个对位区101，且每个对位区101设有对位标记102，进一步地，掩膜板本体10上还设有图案开口区103。
可选的，对位标记102为圆形通孔。
参阅图2，在使用光学对掩膜板进行对位时，通过光源发射的光照射对位区101并由对位系统获取对位区101上的对位标记102及基板上的对位标记104，在合适的画面清晰度下由对位系统获取这些对位标记以对掩膜板进行对位。
其中，本实施例中的对位区101用于在光照下获得预设反射率以进行对位。
具体地，对对位区101进行反射处理，以使得掩膜板具有与预设反射率相同范围的反射率。
其中，预设反射率为在一定强度光照下特定材料的反射率，也就是说本实施例中的掩膜板的对位101在光照下获得的反射率范围与特定材料的反射率范围相同。
可选的，特定材料为铁镍合金。
共同参阅图3至图5，对不同类型掩膜板的对位区进行反射处理的方式不同，本实施例以三类掩膜板为例进行说明。
如图3所示，第一类掩膜板为单层结构的金属掩膜板，包括第一图案层20，第一图案层20上设有对位区201，对位区201上设有对位标记202，进一步地，第一图案层20还设有多个图案开口区203；其中，该第一类掩膜板的对位区201进行反射处理的方式具体为：使用特定材料形成第一图案层20，对位区201在如图所示的光照下获得的反射率即为特定材料的反射率，即可保证了该类掩膜板在光照下获得与特定材料反射率相同范围的反射率。
可选的，第一类掩膜板为可用于制备低分辨率的OLED显示器的蚀刻法精密金属掩膜板，蚀刻法精密金属掩膜板是以金属薄片为本体，经历化学药剂蚀刻之后，在金属薄片表面形成图案以形成掩膜板，一般的，该金属薄片的材料为铁镍合金，即第一图案层20为铁镍合金层，对位区201在光照下获得的反射率即为铁镍合金的反射率，也即特定材料的反射率。
如图4所示，第二类掩膜板为多层结构的金属掩膜板，包括第二图案层30，第二图案层30设有对位区301，对位区301上设有对位标记302，进一步地，第一图案层30还设有多个图案开口区303；其中，该第二类掩膜板的对位区301进行反射处理的方式具体为：在第二图案层30上形成覆盖对位区301的第一材料层304，以使得对位区301在光照下获得与预设反射率相同范围的反射率。
具体地，该方式可包括两种，第一种为：使用特定材料在第二图案层30上形成覆盖对位区301的第一材料层304，即第一材料层304为特定材料层，对位区301在如图所示的光照下获得的反射率即为特定材料的反射率，其中，第一材料层304的覆盖方式可以是仅覆盖对位区301相应的位置，也可以是覆盖对位区301且与第二图案层30相对应的一层材料层；第二种为：当第二图案层30的反射率大于特定材料的反射率时，使用氮化硅材料在第二图案层30上形成覆盖对位区301的第一材料层304，即第一材料层304为氮化硅层，以使得对位区301在光照下获得第二图案层30与氮化硅层的混合反射率，其中，本实施例中氮化硅具有半透明特性，在光照下能够降低第二图案层30的反射率，可根据实际情况，通过控制氮化硅层的厚度来确定第二图案层30的反射率降低的程度，使得降低后的反射率与预设反射率的范围相同，因此，对位区301获得的混合反射率与预设反射率的范围相同。
可选的，第二类掩膜板为可制备中高分辨率的OLED显示器的电铸法精密金属掩膜，电铸法精密金属掩膜板以金属薄片为本体，通过光阻涂布、曝光及显影，并在化学药剂槽中将金属薄片通电后，在金属薄片表面形成图案以形成掩膜板，一般的，该金属薄片的材料为镍钴合金，也即第二图案层30为镍钴合金层，以铁镍合金为特定材料，可在镍钴合金层上形成覆盖对位区301的铁镍合金层，且形成的铁镍合金层的成分比例与特定材料的铁镍合金的成分比例相同，则对位区在光照下获得的反射率即为铁镍合金的反射率；而且由于镍钴合金的反射率大于铁镍合金，因此，还可以如上述的在镍钴合金层上形成一层氮化硅层，以降低镍钴合金层的反射率，使得对位区301在光照下获得的反射率与预设反射率范围相同。
可选的，氮化硅层的厚度为10埃~9000纳米。
如图5所示，第三类掩膜板包括依次层叠第三图案层40及第二材料层41，第二材料层41上设有对位区401，对位区401设有对位标记402，还设有图案开口区403，其中，该第三类掩膜板的对位区401进行反射处理的方式具体为：使用特定材料形成第三图案层40，并去除对位区401相应位置的第二材料层41以露出第三图案层40，即去除图5中虚线所示的部分，对位区401在光照下获得的反射率即为第三图案层40的反射率，也即特定材料的反射率。
可选的，第三类掩膜板为混合型精密金属掩膜板，混合型精密金属掩膜板可用于制备中高分辨率的OLED显示器，混合型精密金属掩膜板通过在金属薄片上形成聚合物薄膜，在通过化学或激光开孔在金属薄片及聚合物薄膜上形成图案以形成掩膜板，本实施例中，以铁镍合金为特定材料，混合型精密金属掩膜板的金属薄片可使用铁镍合金，也即第三图案层40为铁镍合金层，聚合物薄膜即为第二材料层41，在去除了对位区401相应位置的聚合物薄膜后，对位区401在光照下获得的反射率即为铁镍合金的反射率，也即特定材料的反射率。
在具体应用中，同一生产线制备不同分辨率的OLED显示器，需要使用的不同类型的掩膜板以上述三类的蚀刻法精密金属掩膜板、电铸法精密金属掩膜板及混合型精密金属掩膜板为例，可以以蚀刻法精密金属掩膜板的第一图案层为特定材料层，即铁镍合金层，在对位时，根据铁镍合金的反射率调整光源强度以获得合适的画面清晰度，进一步地，通过上述的方式对电铸法精密金属掩膜板及混合型精密金属掩膜板进行反射处理，在需要切换至电铸法精密金属掩膜板或混合型精密金属掩膜板时，即可获得与蚀刻法精密金属掩膜板相同的画面清晰度，进而获得适合电铸法精密金属掩膜板及混合型精密金属掩膜板的对位区的画面清晰度。
区别于现有技术，本发明通过对掩膜板的对位区进行反射处理，使得掩膜板具有与预设反射率相同范围的反射率，进而使得不同类型的掩膜板在对位时，不需要调整光源强度或画面对比度也能获得相同且适合相应掩膜板的画面清晰度，减少了人工作业，提高了生产效率。
以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (19)

  1. 一种掩膜板，其中，所述掩膜板包括对位区，所述对位区用于在一定强度光照下获得预设反射率以进行对位；
    对所述对位区进行反射处理，以使得所述掩膜板具有与所述预设反射率相同范围的反射率；
    其中，所述预设反射率为在所述一定强度光照下特定材料的反射率；
    所述掩膜板为金属掩膜板。
  2. 根据权利要求1所述的掩膜板，其中，所述特定材料为铁镍合金。
  3. 根据权利要求1所述的掩膜板，其中，所述掩膜板为单层结构的金属掩膜板，所述掩膜板包括第一图案层，所述第一图案层设有所述对位区，所述对所述对位区进行反射处理，以使得所述掩膜板具有与所述预设反射率相同范围的反射率包括：
    使用所述特定材料形成所述第一图案层，以使得所述对位区在所述光照下获得所述特定材料的反射率。
  4. 根据权利要求1所述的掩膜板，其中，所述掩膜板为多层结构的金属掩膜板，所述掩膜板包括第二图案层，所述第一图案层设有所述对位区，所述对所述对位区进行反射处理，以使得所述掩膜板具有与所述预设反射率相同范围的反射率包括：
    在所述第二图案层上形成覆盖所述对位区的第一材料层，以使得所述对位区在所述光照下获得与所述预设反射率相同范围的反射率。
  5. 根据权利要求4所述的掩膜板，其中，所述在所述第二图案层上形成覆盖所述对位区的第一材料层，以使得所述对位区在所述光照下获得与所述预设反射率相同范围的反射率包括：
    使用所述特定材料在所述第二图案层上形成覆盖所述对位区的第一材料层，以使得所述对位区在所述光照下获得所述特定材料的反射率。
  6. 根据权利要求4所述的掩膜板，其中，所述第二图案层的反射率大于所述特定材料的反射率，所述在所述第二图案层上形成覆盖所述对位区的第一材料层，以使得所述对位区在所述光照下获得与所述预设反射率相同范围的反射率包括：
    使用氮化硅材料在所述第二图案层上形成覆盖所述对位区的第一材料层，以使得所述对位区在所述光照下获得所述第二图案层与所述氮化硅层的混合反射率。
  7. 根据权利要求6所述的掩膜板，其中，所述第二图案层为镍钴合金层。
  8. 根据权利要求1所述的掩膜板，其中，所述掩膜板包括依次层叠的第三图案层及第二材料层，所述第二材料层设有所述对位区，所述对所述对位区进行反射处理，以使得所述掩膜板具有与所述预设反射率相同范围的反射率包括：
    使用所述特定材料形成所述第三图案层，并去除所述对位区相应位置的所述第二材料层以露出所述第三图案层，进而使得所述对位区在所述光照下获得所述特定材料的反射率。
  9. 根据权利要求8所述的掩膜板，其中，所述第二材料层为聚合物薄膜层。
  10. 一种掩膜板，其中，所述掩膜板包括对位区，所述对位区用于在一定强度光照下获得预设反射率以进行对位；
    对所述对位区进行反射处理，以使得所述掩膜板具有与所述预设反射率相同范围的反射率。
  11. 根据权利要求10所述的掩膜板，其中，所述预设反射率为在所述一定强度光照下特定材料的反射率。
  12. 根据权利要求11所述的掩膜板，其中，所述特定材料为铁镍合金。
  13. 根据权利要求11所述的掩膜板，其中，所述掩膜板为单层结构的金属掩膜板，所述掩膜板包括第一图案层，所述第一图案层设有所述对位区，所述对所述对位区进行反射处理，以使得所述掩膜板具有与所述预设反射率相同范围的反射率包括：
    使用所述特定材料形成所述第一图案层，以使得所述对位区在所述光照下获得所述特定材料的反射率。
  14. 根据权利要求11所述的掩膜板，其中，所述掩膜板为多层结构的金属掩膜板，所述掩膜板包括第二图案层，所述第一图案层设有所述对位区，所述对所述对位区进行反射处理，以使得所述掩膜板具有与所述预设反射率相同范围的反射率包括：
    在所述第二图案层上形成覆盖所述对位区的第一材料层，以使得所述对位区在所述光照下获得与所述预设反射率相同范围的反射率。
  15. 根据权利要求14所述的掩膜板，其中，所述在所述第二图案层上形成覆盖所述对位区的第一材料层，以使得所述对位区在所述光照下获得与所述预设反射率相同范围的反射率包括：
    使用所述特定材料在所述第二图案层上形成覆盖所述对位区的第一材料层，以使得所述对位区在所述光照下获得所述特定材料的反射率。
  16. 根据权利要求14所述的掩膜板，其中，所述第二图案层的反射率大于所述特定材料的反射率，所述在所述第二图案层上形成覆盖所述对位区的第一材料层，以使得所述对位区在所述光照下获得与所述预设反射率相同范围的反射率包括：
    使用氮化硅材料在所述第二图案层上形成覆盖所述对位区的第一材料层，以使得所述对位区在所述光照下获得所述第二图案层与所述氮化硅层的混合反射率。
  17. 根据权利要求16所述的掩膜板，其中，所述第二图案层为镍钴合金层。
  18. 根据权利要求11所述的掩膜板，其中，所述掩膜板包括依次层叠的第三图案层及第二材料层，所述第二材料层设有所述对位区，所述对所述对位区进行反射处理，以使得所述掩膜板具有与所述预设反射率相同范围的反射率包括：
    使用所述特定材料形成所述第三图案层，并去除所述对位区相应位置的所述第二材料层以露出所述第三图案层，进而使得所述对位区在所述光照下获得所述特定材料的反射率。
  19. 根据权利要求18所述的掩膜板，其中，所述第二材料层为聚合物薄膜层。
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