WO2019022564A1 - Substrat - Google Patents

Substrat Download PDF

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Publication number
WO2019022564A1
WO2019022564A1 PCT/KR2018/008549 KR2018008549W WO2019022564A1 WO 2019022564 A1 WO2019022564 A1 WO 2019022564A1 KR 2018008549 W KR2018008549 W KR 2018008549W WO 2019022564 A1 WO2019022564 A1 WO 2019022564A1
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WO
WIPO (PCT)
Prior art keywords
less
spacer
substrate
layer
hemispherical
Prior art date
Application number
PCT/KR2018/008549
Other languages
English (en)
Korean (ko)
Inventor
송철옥
황지영
서한민
박성은
배남석
이승헌
유정선
Original Assignee
주식회사 엘지화학
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020180087289A external-priority patent/KR102118371B1/ko
Application filed by 주식회사 엘지화학 filed Critical 주식회사 엘지화학
Priority to JP2019571647A priority Critical patent/JP6953668B2/ja
Priority to CN201880048881.0A priority patent/CN110959135B/zh
Priority to EP18837543.0A priority patent/EP3660581B1/fr
Publication of WO2019022564A1 publication Critical patent/WO2019022564A1/fr
Priority to US16/751,866 priority patent/US11428994B2/en

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13398—Spacer materials; Spacer properties

Definitions

  • the present application is directed to a substrate.
  • Patent Document 1 discloses a so-called GH cell (Guest host cell) applying a mixture of a liquid crystal host (liqid crystal host) and a dichroic dye guest.
  • spacers are located between the substrates to maintain the spacing between the substrates.
  • Patent Document 1 European Patent Publication No. 0022311
  • the present application provides a substrate.
  • it is a black spacer which exhibits high optical density and is provided with a spacer which is attached to the substrate layer or the electrode layer on the substrate layer with excellent adhesion and does not cause defects such as light leakage when applied to a product.
  • the purpose It is another object of the present invention to provide a method of manufacturing a substrate to which such a spacer is applied.
  • ambient temperature is a natural, non-warming or non-warming temperature, usually at a temperature within the range of about 10 ° C to 30 ° C, or about 23 ° C or about 25 ° C.
  • the unit of temperature is degrees Celsius.
  • the physical properties measured at normal pressure are those measured when the measured pressure affects the result in the physical properties mentioned in this specification.
  • the term atmospheric pressure is a natural temperature without being pressurized or depressurized, and usually about 1 atm is referred to as atmospheric pressure.
  • the substrate of the present application comprises a base layer and a spacer present on the base layer.
  • the substrate layer any base layer used in a substrate in a configuration of a known optical device such as, for example, a liquid crystal display (LCD) can be applied without particular limitation.
  • the substrate layer may be an inorganic substrate layer or an organic substrate layer.
  • the inorganic base layer a glass base layer and the like can be exemplified.
  • the organic base layer various plastic films and the like can be exemplified.
  • Plastic films include TAC (triacetyl cellulose) film; Cycloolefin copolymer (COP) films such as norbornene derivatives; Polyacrylate films such as PMMA (poly (methyl methacrylate), polycarbonate films, polyolefin films such as PE (polyethylene) or PP (polypropylene), polyvinyl alcohol films, DAC (diacetyl cellulose)
  • a polyether sulfone (PES) film, a polyetheretherketone (PES) film, a polyphenylsulfone (PPS) film, a polyetherimide (PEI) film, a polyethylenemaphthatate (PEN) film, a polyethyleneterephtalate (PET) Film or PAR (polyarylate) film, and the like can be exemplified, but are not limited thereto.
  • the thickness of the substrate layer in the substrate of the present application is not particularly limited, and an appropriate range may be selected depending on the application.
  • Spacers are present on the base layer.
  • the spacer may be fixed to the substrate layer.
  • the spacer may be fixed directly in contact with the substrate layer, or may be fixed on the other layer if there is another layer between the substrate layer and the spacer.
  • the kind of the other layer includes a known layer necessary for driving the optical device, and for example, an electrode layer described later can be exemplified.
  • the substrate may have a structure in which an electrode layer is further present between the base layer and the column spacer, and the spacer is in contact with the electrode layer.
  • Fig. 1 is a view showing a case where the spacer 200 is formed on the base layer 100.
  • Fig. 2 is a plan view showing the case where the electrode layer 300 is formed on the base layer 100 and the spacer 200 is formed Fig.
  • the spacer may be a black column spacer.
  • the layer containing the same components as the black spacer in the above may be formed by, for example, coating, vapor deposition or plating. At this time, the thickness of the formed layer may be the same as the height of the black spacer, or about 12 mu m.
  • the optical density of the layer having a thickness of about 12 mu m formed of the same component is in the above-mentioned range
  • the optical density of the actual black spacer is in the above range
  • a case where a value obtained by converting the optical density of a layer having a thickness of about 12 mu m in consideration of the thickness of the actual black spacer falls within the above range may be included.
  • Such optical density can be obtained, for example, by a method for evaluating the optical density of the spacer of the following example or comparative example.
  • the optical density may be about 3.8 or less, about 3.6 or less, about 3.4 or less, about 3.2 or less, about 3 or less, about 2.8 or less, about 2.6 or less, about 2.4 or less, about 2.2 or less, , 1.4 or more, or 1.6 or more.
  • the area where the spacer is present is optically inactive.
  • the application of the above-mentioned optical density black spacer It is possible to prevent the occurrence of defects and ensure a uniform optical performance.
  • Such a black spacer can be produced, for example, by adding a component capable of realizing black to a material for forming a column spacer.
  • the spacer may include a pigment or dye capable of darkening, and specifically, a metal oxide, a metal nitride, a metal oxynitride, a carbon black, a graphite, an azo pigment, a phthalocyanine pigment, . ≪ / RTI >
  • a metal oxide which can be applied in the above
  • examples of the metal oxide include chromium oxide (CrxOy and the like), copper oxide (CuxOy and the like) and metal oxynitride include aluminum oxynitride (AlxOyNz and the like)
  • the carbon-based material include porous carbon such as carbon nanotube (CNT), graphene, and activated carbon.
  • the present invention is not limited thereto.
  • the black spacer can be manufactured by mixing the material (e.g., carbon-based material) together with the curable resin and then curing the material, or by applying the material itself to the deposition or plating or the like in an appropriate manner.
  • material e.g., carbon-based material
  • the types of pigments, dyes and the like that can be used in the present application are not limited to the above, and appropriate types may be selected depending on the intended darkening (optical density) and the like, . ≪ / RTI >
  • the height of the spacer may be in the range of 1 ⁇ ⁇ to 50 ⁇ ⁇ in one example.
  • the height may be 3 ⁇ or more, 5 ⁇ or more, 7 ⁇ or more, 9 ⁇ or more, 11 ⁇ or more, 13 ⁇ or more, 15 ⁇ or more, 17 ⁇ or more, 19 ⁇ or more, 21 ⁇ or more, Mu m or more or 27 mu m or more.
  • the height may be 48 ⁇ or less, 46 ⁇ or less, 44 ⁇ or less, 42 ⁇ or less, 40 ⁇ or less, 38 ⁇ or less, 36 ⁇ or less, 34 ⁇ or less, 32 ⁇ or less, 30 ⁇ or less, Mu m or less.
  • the shape of the column spacer in the present application is not particularly limited and may be, for example, a cylindrical shape, a polygonal column shape such as a triangular shape, a square shape, a pentagonal shape or a hexagonal column shape, or a hemispherical shape, mesh shape, .
  • the spacer may be a hemispherical spacer having at least a hemispherical portion formed thereon.
  • hemispherical portion in the present application may mean a portion of a spacer including a curved shape in which the trajectory of the cross section has a predetermined curvature.
  • the trajectory of the cross section of the hemispherical portion may include a curved portion in which the center of curvature exists inside the cross section trajectory.
  • the hemispherical portion may have a maximum curvature of a cross-sectional locus of 2,000 mm < -1 > or less.
  • the curvature is a numerical value representing the degree of curvature of a line, and is defined as an inverse number of a radius of curvature which is a radius of a contact point at a predetermined point of the curve. In the case of a straight line, the curvature is zero, and as the curvature increases, the curve bends further.
  • the degree of curvature of the hemispherical portion is controlled so that the maximum curvature of the cross-sectional locus of the hemispherical portion is 2,000 mm < -1 > or less so that uniform alignment treatment can be performed even when the alignment treatment of the alignment layer is performed on the hemispherical portion.
  • the section for confirming the cross-sectional locus of the hemispherical portion may be any arbitrary plane for the base layer.
  • the maximum curvature may mean the largest curvature among the curvatures for all the contact sources that can be obtained on the cross-sectional locus of the hemispherical portion.
  • the end face of said hemispherical locus may not include a portion bent to a curvature greater than about 2,000 mm -1.
  • the maximum curvature is In another example 1,800 mm -1 or less, 1,600 mm -1 or less, 1,400 mm -1 or less, 1,200 mm -1 or less, 1,000 mm -1 or less, 900 mm -1 or less, 950 mm -1 or less, 850 mm -1 or less, 800 mm -1 or less, 750 mm -1 or less, 700 mm -1 or less, 650 mm -1 or less, 600 mm -1 or less, 550 mm -1 or less, 500 mm -1 or less, 450 mm - 1 or less, 400 mm -1 or less, 350 mm -1 or less, 300 mm -1 or less, 250 mm -1 or less, 200 mm -1 or 150 mm -1 or less.
  • the maximum curvature may be at least 5 mm -1, at least 10 mm -1, at least 15 mm -1, at least 20 mm -1, at least 25 mm -1, at least 30 mm -1, at least 35 mm -1 , At least 40 mm -1, at least 45 mm -1, or at least 50 mm -1 .
  • the cross-sectional locus of the hemispherical portion may or may not include a portion having a curvature of zero, that is, a linear portion.
  • FIG. 3 is an example of a cross-sectional locus of a hemispherical portion that does not include a portion having a curvature of 0
  • FIG. 4 is an example of a cross-sectional locus of a hemispherical portion including a portion having a curvature of zero.
  • the spacer includes at least the hemispherical portion as described above.
  • the spacer may be formed in various shapes as long as it includes the hemispherical portion.
  • the hemispherical spacer may be a directly formed hemisphere on the base layer surface as shown in Fig. 3 or 4, or it may be a columnar spacer comprising hemispheres at the top as shown in Fig. 5 or 6.
  • the hemispherical portion of the hemispherical spacer may not include a portion having a curvature of zero in a cross-sectional locus, or a portion having a cross- (A flat surface at the top).
  • the hemispherical portion of the same shape as that of the hemispherical portion of the spacer of FIG. 3 or 5 is referred to as a hemispherical portion and a hemispherical portion of a shape having a flat surface on the upper portion like the hemispherical portion of the spacer of FIG.
  • the portion can be referred to as a flat hemispherical portion.
  • H2 is the height of the hemispherical portion
  • R is the radius of curvature of the hemispherical portion
  • W1 is the length (width) of the flat surface of the flat hemispherical portion
  • W2 is the width of the spacer
  • H1 is the height Min < / RTI >
  • the hemispherical portion may be a complete hemispherical shape or an approximately hemispherical shape.
  • the complete hemispherical shape is a hemispherical shape that satisfies the following relational expression 1
  • the approximate hemispherical shape can be a hemispherical shape that satisfies any of the following relational expressions 2 to 4.
  • the hemispherical section may have a shape in which the cross-sectional shape satisfies any one of the following relational formulas (1) to (4).
  • a is the horizontal length of the hemispherical section measured at the center of the imaginary contact circle of the hemispherical section
  • b is the vertical length of the hemispherical section measured at the center of the virtual contact circle of the hemispherical section
  • the radius of curvature in the relational expressions 1 to 4 corresponds to the length indicated by R in Figs.
  • the virtual contact circle may mean a contact circle having the largest radius of curvature among a plurality of imaginary contact radii in contact with the curved line forming the hemispherical portion.
  • the contact circle having the largest radius of curvature among the plurality of imaginary contact radii at arbitrary points of the curved line is expressed by the relational expressions 1 to 4 Can be a virtual contact circle. If the hemispherical portion is a flat hemispherical portion as shown in Figs. 4 and 6, a contact circle having the greatest radius of curvature among a plurality of imaginary contact radii, which are arbitrary points of both curves except the upper flat line, It becomes a virtual contact circle as referred to in relational expressions 1 to 4.
  • the horizontal length is a length measured in a direction parallel to the substrate layer surface (100 in Figs. 3 to 6) at the center point of the virtual contact circle, (100 in Figs. 3 to 6).
  • a is the distance from the center of the imaginary contact circle of the hemispherical section in the horizontal direction to the point where the hemispherical portion measured ends.
  • the horizontal length may be a length measured from the center of the virtual contact circle in the rightward direction and two lengths measured in the leftward direction.
  • the a applied in the relational expressions 1 to 4 is a short length of the two lengths Length. 3 and 5, the horizontal length a is a numerical value corresponding to 1/2 of the width W2 of the spacer. 4 and 6, the value (2a + W1) obtained by adding the length (width) W1 of the flat portion to twice the horizontal length (a) may correspond to the width W2 of the spacer.
  • b is the distance from the center of the virtual contact circle of the hemispherical cross section to the point where the hemispherical portion first contacts with the hemisphere portion in the vertical direction.
  • Such a vertical length b may be generally equal to the height of the hemispherical portion, for example, the length denoted by H2 in Figs. 3-6.
  • Fig. 7 shows a case in which the curved line of the hemispherical portion of the hemispherical portion satisfying the relational expression 1 has a complete circle curve, that is, a curve having the same virtual contact circle.
  • a tapered portion may be formed at a lower portion of the spacer, for example, at a lower portion contacting the base layer side, the curved portion having a curvature center on the outer surface of the cross section.
  • the dimensions of the spacer of the above-described type are not particularly limited, and can be suitably selected in consideration of, for example, the cell gap of the desired optical device, the aperture ratio, and the like.
  • the height of the hemispherical portion may be in the range of 1 ⁇ to 20 ⁇ .
  • the height may be 2 ⁇ or more, 3 ⁇ or more, 4 ⁇ or more, 5 ⁇ or more, 6 ⁇ or more, 7 ⁇ or more, 8 ⁇ or more, 9 ⁇ or more, 10 ⁇ or 11 ⁇ or more in another example.
  • the height may also be 19 ⁇ m or less, 18 ⁇ m or less, 17 ⁇ m or less, 16 ⁇ m or less, 15 ⁇ m or less, 14 ⁇ m or less, 13 ⁇ m or less, 12 ⁇ m or less or 11 ⁇ m or less in other examples.
  • the width of the hemispherical portion may be in the range of 2 ⁇ to 40 ⁇ .
  • the width may be 4 ⁇ or more, 6 ⁇ or more, 8 ⁇ or more, 10 ⁇ or more, 12 ⁇ or more, 14 ⁇ or more, 16 ⁇ or more, 18 ⁇ or more, 20 ⁇ or 22 ⁇ or more in other examples.
  • the width may be 38 ⁇ m or less, 36 ⁇ m or less, 34 ⁇ m or less, 32 ⁇ m or less, 30 ⁇ m or less, 28 ⁇ m or less, 26 ⁇ m or less, 24 ⁇ m or less or 22 ⁇ m or less in other examples.
  • the height of the spacer is the same as the height of the hemispherical portion when the spacer has the shape as shown in FIG. 3 or 4, and in the case of the shapes as shown in FIGS. 5 and 6, the height of the hemispherical portion plus the height H1 of the column It can be a number.
  • the height may be in the range of 1 [mu] m to 50 [mu] m in one example.
  • the height may be 3 ⁇ or more, 5 ⁇ or more, 7 ⁇ or more, 9 ⁇ or more, 11 ⁇ or more, 13 ⁇ or more, 15 ⁇ or more, 17 ⁇ or more, 19 ⁇ or more, 21 ⁇ or more, Mu m or more or 27 mu m or more.
  • the height may be 48 ⁇ or less, 46 ⁇ or less, 44 ⁇ or less, 42 ⁇ or less, 40 ⁇ or less, 38 ⁇ or less, 36 ⁇ or less, 34 ⁇ or less, 32 ⁇ or less, 30 ⁇ or less, Mu m or less.
  • the hemispherical spacer or the hemispherical column spacer as described above, it is possible to uniformly perform the alignment treatment even on the alignment film formed on the spacer, maintain a uniform cell gap, The performance of the device can be maintained excellent.
  • the spacer can be produced by mixing the above-mentioned dyestuff or pigments for darkening, for example, in a resin used for manufacturing a column spacer or the like at an appropriate ratio.
  • the spacer may be formed by including an ultraviolet curable resin together with the above-mentioned pigment or dye.
  • the ultraviolet curable compound can be formed by curing while keeping the shape of the ultraviolet curable compound in a state capable of forming a desired shape by an imprinting method described later.
  • the ultraviolet curable compound A resin can form the spacer.
  • the specific kind of ultraviolet curable compound that can be used for forming the spacer is not particularly limited, and for example, an acrylate-based polymer material or an epoxy-based polymer may be used, but the present invention is not limited thereto.
  • the method of manufacturing the spacer of the above-described type by applying the above-mentioned materials in the present application is not particularly limited, in order to manufacture the hemispherical spacer having excellent adhesion according to the intended design content, the following imprinting method It is necessary to apply.
  • the spacer can be manufactured by applying an imprinting mask including a light shielding layer as schematically shown in FIG.
  • the mask shown in Fig. 13 has a concave hemispherical shape 9011 formed on one surface of a light transmissive body, for example, ultraviolet ray permeable body, and a portion where the hemispherical shape is not formed on the surface on which the hemispherical shape 9011 is formed A light shielding film 902 is formed.
  • the hemispherical shape 9011 is formed by forming an imprinting mold 901 on one surface of the main body 9 of the imprinting mask, and forming the hemispherical shape 9011 and the light shielding film 902 on the mold 901 . If necessary, the surface on which the light-shielding film 902 is formed may be subjected to appropriate mold releasing treatment.
  • FIG. 1 An exemplary process for making the spacer using a mask of this type is shown in Fig.
  • a layer 200 of an ultraviolet curable compound is formed on the surface of the base material layer 100 and the concave portion of the mask 900 is pressed on the layer 200 as shown in Fig.
  • the compound is cured according to the hemispherical shape formed in the mask 900 to form a spacer.
  • the spacer may then be formed in a fixed form on the substrate layer 100 by removing the mask 900 and removing the uncured compound.
  • the target hemispherical or hemispherical columnar spacer can be manufactured by adjusting the amount of ultraviolet light, the degree of squeezing of the mask, and / or the hemispherical shape of the mask 900 irradiated in the above process.
  • FIG. 14 a mask for manufacturing hemispherical spacers is shown.
  • the shape of the spacer is not limited as described above, the shape of the mask can be changed according to the shape of the desired spacer.
  • the substrate of the present application may include, in addition to the substrate layer and the spacer, other elements required for driving the optical device. These elements are variously known, and typically include an electrode layer and the like. In one example, the substrate may further include an electrode layer between the substrate layer and the spacer. As the electrode layer, a known material can be applied. For example, the electrode layer may comprise a metal alloy, an electrically conductive compound, or a mixture of two or more thereof.
  • metal such as gold, CuI, indium tin oxide (ITO), indium zinc oxide (IZO), zinc tin oxide (ZTO), zinc oxide doped with aluminum or indium, magnesium indium oxide, nickel tungsten oxide, Metal oxides such as ZnO, SnO 2 or In 2 O 3 , metal serrides such as gallium nitride and zinc selenide, and metal sulfides such as zinc sulfide.
  • the transparent positive hole injecting electrode layer can also be formed using a metal thin film of Au, Ag or Cu and a laminate of a transparent material of high refractive index such as ZnS, TiO 2 or ITO.
  • the electrode layer can be formed by any means such as vapor deposition, sputtering, chemical vapor deposition or electrochemical means. Patterning of the electrode layer is also possible in a known manner without any particular limitation, and may be patterned through a process using, for example, a known photolithography or a shadow mask.
  • the substrate of the present application may further include an alignment layer present on the substrate layer and the spacer.
  • another exemplary substrate of the present application comprises a substrate layer; A spacer present on the base layer; And an alignment layer formed on the base layer and the spacer.
  • the kind of the alignment layer formed on the base layer and the spacer is not particularly limited, and a well-known alignment film, for example, a well-known rubbing alignment film or a photo alignment film can be applied.
  • the method of forming the alignment film on the base layer and the spacer and performing the alignment treatment thereon is also in accordance with a known method.
  • the alignment layer may have a specific shape depending on the shape of the spacer.
  • Fig. 15 is a diagram schematically showing the cross-section locus of such an orientation film.
  • Fig. 15 shows an example of the cross-sectional shape of the alignment film formed on the spacer, and shows a hemispherical shape in which the center of curvature is formed on the inner side of the cross section with the predetermined width W3 and height H3.
  • the alignment film may also include the hemispherical portion described above.
  • the hemispherical portion may have a maximum curvature of the cross-sectional locus of 2,000 mm < -1 > or less as in the case of the spacer.
  • the maximum curvature is In another example 1,800 mm -1 or less, 1,600 mm -1 or less, 1,400 mm -1 or less, 1,200 mm -1 or less, 1,000 mm -1 or less, 900 mm -1 or less, 950 mm -1 or less, 850 mm -1 or less, 800 mm -1 or less, 750 mm -1 or less, 700 mm -1 or less, 650 mm -1 or less, 600 mm -1 or less, 550 mm -1 or less, 500 mm -1 or less, 450 mm - 1 or less, 400 mm -1 or less, 350 mm -1 or less, 300 mm -1 or less, 250 mm -1 or less, 200 mm -1 or 150 mm -1 or less.
  • the maximum curvature may be at least 5 mm -1, at least 10 mm -1, at least 15 mm -1, at least 20 mm -1, at least 25 mm -1, at least 30 mm -1, at least 35 mm -1 , At least 40 mm -1, at least 45 mm -1, or at least 50 mm -1 .
  • the cross-sectional locus of the hemispherical portion of the alignment film may or may not include a portion having a curvature of zero, that is, a linear portion.
  • the height or width of the alignment layer formed on the spacer as described above is not particularly limited as long as it is determined according to the height and width of the spacer existing therebelow and the thickness of the formed alignment layer.
  • the height of the hemispherical portion may be in the range of 1 ⁇ to 50 ⁇ .
  • the height may be 2 ⁇ or more, 3 ⁇ or more, 4 ⁇ or more, 5 ⁇ or more, 6 ⁇ or more, 7 ⁇ or more, 8 ⁇ or more, 9 ⁇ or more, 10 ⁇ or 11 ⁇ or more in another example.
  • the height is not more than 48 ⁇ m, not more than 46 ⁇ m, not more than 44 ⁇ m, not more than 42 ⁇ m, not more than 40 ⁇ m, not more than 38 ⁇ m, not more than 36 ⁇ m, not more than 34 ⁇ m, not more than 32 ⁇ m, Less than or equal to 26 ⁇ , less than or equal to 24 ⁇ , less than or equal to 22 ⁇ , less than or equal to 19 ⁇ , less than or equal to 18 ⁇ , less than or equal to 17 ⁇ , less than or equal to 16 ⁇ , less than or equal to 15 ⁇ , less than or equal to 14 ⁇ , less than or equal to 13 ⁇ , less than or equal to 12.
  • the width of the hemispherical portion may be in the range of 1 ⁇ to 80 ⁇ .
  • the width may be 2 ⁇ or more, 3 ⁇ or more, 4 ⁇ or more, 6 ⁇ or more, 8 ⁇ or more, 10 ⁇ or more, 12 ⁇ or more, 14 ⁇ or more, 16 ⁇ or more, 18 ⁇ or more, Or more.
  • the width is not more than 78 ⁇ m, not more than 76 ⁇ m, not more than 74 ⁇ m, not more than 72 ⁇ m, not more than 70 ⁇ m, not more than 68 ⁇ m, not more than 66 ⁇ m, not more than 64 ⁇ m, 45 ⁇ m or less, 44 ⁇ m or less, 42 ⁇ m or less, 40 ⁇ m or less, 38 ⁇ m or less, 36 ⁇ m or less, 34 ⁇ m or less, 32 ⁇ m or less Or less, 30 mu m or less, 28 mu m or less, 26 mu m or less, 24 mu m or less, or 22 mu m or less.
  • alignment treatment of the alignment film formed on the spacer by adjusting the shape of the spacer to a specific hemispherical shape can be performed uniformly without being influenced by the step difference of the spacer.
  • the shape of the alignment layer can be further controlled.
  • the cross-section of the alignment film may be a curved line in which the center of curvature is formed on the outer side of the cross-section as shown in Fig. 15 and Fig.
  • This shape can be formed, for example, in accordance with the shape of the spacer and the formation conditions of the orientation film. Thereby, even when the alignment treatment such as rubbing treatment is performed on the alignment film, a uniform alignment treatment which is not affected by the step of the spacer can be performed.
  • the base layer may include a plurality of spacers by including the same or different spacers, including hemispherical spacers as mentioned above. Such a plurality of spacers may be disposed on the base layer at the same time with predetermined regularity and irregularity. Specifically, at least a part of the plurality of spacers on the base layer is irregular in terms of being arranged so as to have mutually different pitches, but it may be regular in terms of being arranged with substantially the same density between regions determined according to a predetermined rule .
  • At least some of the spacers disposed on the substrate layer may be arranged to have different pitches from one another.
  • pitch can be defined as the length of the side of the closed figure when a part of the plurality of spacers is selected so as to form a closed figure in which no other spacer is present therein. Unless otherwise specified, the unit of the pitch is ⁇ .
  • the formed figure to be formed may be triangular, square or hexagonal. That is, when three arbitrary spacers among a plurality of spacers are selected and connected to each other, the triangle is formed. When the four spacers are selected and connected to each other, the square is formed, and the six spacers are selected, When connected, the hexagon is formed.
  • a quadrangle which is a closed shape is formed.
  • the closed figure formed at the time of determining the pitch is formed such that no spacer is present therein.
  • spacers constituting a closed figure are formed such that another spacer is present therein, It is not a figure.
  • the ratio (%) of the number of sides having the same length among the sides of the triangle, quadrangle, or hexagon, which is the closed figure formed as described above (100 x (number of sides of the same length) 100 ⁇ (number of sides of the same length) / 4 in the case of hexagonal, and 100 ⁇ (number of sides of the same length) / 6 in the case of a hexagon can be 85% or less.
  • the ratio may be 84% or less, 80% or less, 76% or less, 67% or less, 55% or 40% or less.
  • the lower limit of the ratio is not particularly limited. That is, in some cases, since the lengths of all sides of the closed diagram may not be the same, the lower limit of the ratio may be 0%.
  • the arrangement of the spacers of the present application is irregular in that at least some of them have different pitches, but this irregularity is controlled under a certain regularity.
  • the regularity described above may mean that the arrangement density of the spacers is substantially close to each other in a certain region.
  • the normal pitch of the plurality of irregularly arranged spacers is P
  • a plurality of square regions having a length of one side of 10P on the surface of the substrate layer are arbitrarily selected.
  • the standard deviation of the number of spacers is 2 or less.
  • normal pitch means that a plurality of spacers arranged on the base layer in an irregular manner are arranged so that virtually all of the spacers are arranged at the same pitch in consideration of the number of the spacers and the area of the base layer, Means the distance between the centers of the spacers.
  • the standard deviation is a numerical value representing the scattering degree of the number of the spacers, and is a numerical value determined by the square root of the amount of dispersion.
  • a standard deviation of the number of spacers existing in the region after designating at least two or more of the square regions is arbitrarily set on the surface on which the spacer of the base layer is formed, its standard deviation is 2 or less.
  • the standard deviation may be 1.5 or less, 1 or less, or 0.5 or less in other examples.
  • the lower limit of the standard deviation means that the desired regularity is achieved as the numerical value is lower, so that the lower limit is not particularly limited and may be zero, for example.
  • the number of the rectangular regions specified above is not particularly limited as long as it is two or more, in one example, the rectangular regions are arbitrarily selected so as not to overlap each other on the surface of the base layer, At least 10%, at least 20%, at least 30%, at least 40%, at least 50%, at least 60%, at least 70%, at least 80% or at least 90% of the total area of the substrate.
  • the range of the normal pitch P forming one side of the arbitrary rectangular area is not particularly limited as long as it can be determined by the number of spacers existing on the base layer and the area of the base layer as described above, And may be determined within the range of 100 mu m to 1,000 mu m.
  • the average number of spacers present in the randomly selected square regions as described above may be, for example, about 80 to about 150.
  • the average number may be 82 or more, 84 or more, 86 or more, 88 or more, 90 or more, 92 or more, 94 or more, 96 or 98 or more.
  • the average number is 148 or less, 146 or less, 144 or less, 142 or less, 140 or less, 138 or less, 136 or less, 134 or less, 132 or less, 130 or less, 128 Or less, 126 or less, 124 or less, 122 or less, 120 or less, 118 or less, 116 or less, 114 or less, or 112 or less.
  • the ratio SD / A of the average number A of the spacers to the standard deviation SD mentioned above may be 0.1 or less. In other examples, the ratio may be 0.09 or less, 0.08 or less, 0.07 or less, 0.06 or less, 0.05 or less, 0.04 or less, or 0.03 or less.
  • the average number (A) and the ratio (SD / A) may be changed depending on the case.
  • the transmittance, the cell gap, and / or the uniformity of the cell gap required in the device to which the substrate is applied The above values may be changed.
  • the standard deviation of the number of the spacers in each unit region may be 2 or less.
  • the standard deviation thereof is 2 or less.
  • the shape of each divided unit area is not particularly limited as long as the unit areas are divided so as to have the same area, but may be, for example, a triangular, square, or hexagonal area.
  • the standard deviation in the above state may be 1.5 or less, 1 or less, or 0.5 or less in other examples, and the lower limit thereof is not particularly limited as described above, and may be 0, for example.
  • the number of unit regions is not particularly limited, but in one example, the base layer may be divided into two or more, four or more, six or more, eight or more, or ten or more regions having the same area.
  • the average number of the spacers existing in the area is 0 to 4 It can be in range.
  • the average number may be 3.5 or less, 3 or less, 2.5 or less, 2 or less, or 1.5 or less in other examples.
  • the average number may also be greater than or equal to 0.5 in other examples.
  • the number of square regions having a normal pitch P of one side arbitrarily specified is not particularly limited as long as the number of square regions is two or more.
  • the square regions are arbitrarily selected so as not to overlap each other on the surface of the base layer,
  • the area occupied by the randomly selected area is at least about 10%, at least 20%, at least 30%, at least 40%, at least 50%, at least 60%, at least 70%, at least 80%, or at least 90% Or more.
  • the total density of the plurality of spacers can be adjusted so that the ratio of the area occupied by the spacers to the entire area of the base layer is about 50% or less. In another example, less than or equal to about 45%, less than or equal to about 40%, less than or equal to about 35%, less than or equal to about 30%, less than or equal to about 25%, less than or equal to about 20%, less than or equal to about 15%, less than or equal to about 10% , Not more than 9%, not more than 8.5%, not more than 8%, not more than 7.5%, not more than 7%, not more than 6.5%, not more than 6%, not more than 5.5%, not more than 5%, not more than 4.5% Or less, 2.5% or less, 2% or less, or 1.5% or less. In another example, the ratio may be about 0.1% or more, 0.2% or more, 0.3% or more, 0.4% or more, 0.5% or more, 0.6% or more, 0.7% or more, 0.8% or more, 0.9% or more or 0.95% or more.
  • the spacers are formed so as to maintain the uniform cell gap between the substrates, while ensuring uniform optical characteristics without causing so- can do.
  • the above numerical values can be changed when necessary, for example, the numerical values can be changed in consideration of the transmittance, the cell gap, and / or the uniformity of the cell gap required in the device to which the substrate is applied .
  • the plurality of spacers may be arranged such that the spacing normal distribution diagram represents a predetermined shape.
  • the spacing normal distribution diagram is a distribution diagram showing the pitch between the spacers as the X-axis and the ratio of the spacers having the corresponding pitches as the Y-axis among all the spacers, wherein the ratio of the spacers was 1 It is the ratio that is obtained when.
  • the pitch in the description related to the above-described spacing normal distribution is the length of a side in a triangle, a quadrangle, or a hexagon, which is the above-mentioned closed shape.
  • the distribution diagram can be obtained by using a known random number coordinate program, for example, a CAD, MATLAB or STELLA random number coordinate program or the like.
  • the plurality of spacers may be arranged such that the half height area in the distribution diagram is in the range of 0.4 to 0.95.
  • the half height area may be 0.6 or more, 0.7 or more, or 0.85 or more in other examples.
  • the half height area may be 0.9 or less, 0.85 or less, 0.8 or less, 0.75 or less, 0.7 or less, 0.65 or less, 0.6 or less, 0.55 or less or 0.5 or less in another example.
  • the plurality of spacers may be arranged such that the ratio (FWHM / Pm) of the half height width (FWHM) to the average pitch (Pm) in the distribution diagram is 1 or less.
  • the ratio (FWHM / Pm) may be 0.05 or more, 0.1 or more, 0.11 or more, 0.12 or more, or 0.13 or more in another example.
  • the ratio FWHM / Pm is about 0.95 or less, about 0.9 or less, about 0.85 or less, about 0.8 or less, about 0.75 or less, about 0.7 or less, about 0.65 or less, about 0.6 or less, about 0.55 or less, About 0.5 or less, about 0.45 or less, or about 0.4 or less.
  • the average pitch Pm is defined by the spacers selected when at least 80%, at least 85%, at least 90% or at least 95% of the spacers are selected to form the triangular, square or hexagonal shape as described above. Is the average of the length of each side of a triangle, square, or hexagon. Also, in the above, the spacers are selected such that the triangles, squares or hexagons formed do not share vertices with each other.
  • the plurality of spacers may be arranged such that the half height width (FWHM) in the above distribution diagram is in the range of 0.5 mu m to 1,000 mu m.
  • the half height width FWHM may be at least about 1 ⁇ , at least 2 ⁇ , at least 3 ⁇ , at least 4 ⁇ , at least 5 ⁇ , at least 6 ⁇ , at least 7 ⁇ , at least 8 ⁇ , 15 mu m or more, 16 mu m or more, 17 mu m or more, 18 mu m or more, 19 mu m or more, 20 mu m or more, 21 mu m or more, 22 mu m or more, 23 mu m or more, or 24 mu m or more.
  • the half height width is about 900 ⁇ ⁇ , 800 ⁇ ⁇ , 700 ⁇ ⁇ , 600 ⁇ ⁇ , 500 ⁇ ⁇ , 400 ⁇ ⁇ , 300 ⁇ ⁇ , 200 ⁇ ⁇ , Or less, 90 ⁇ m or less, 80 ⁇ m or less, 70 ⁇ m or less, 60 ⁇ m or less, 50 ⁇ m or less, 40 ⁇ m or less, or 30 ⁇ m or less.
  • the plurality of spacers may be arranged such that the maximum height (Fmax) of the spacing normal distribution is at least 0.006 and less than 1.
  • the maximum height Fmax may be about 0.007 or more, about 0.008 or more, about 0.009 or more, or about 0.0095 or more in other examples.
  • the maximum height Fmax is about 0.9 or less, about 0.8 or less, about 0.7 or less, about 0.6 or less, about 0.5 or less, about 0.4 or less, about 0.3 or less, about 0.2 or less, about 0.1 or less, About 0.08 or less, about 0.07 or less, about 0.06 or less, about 0.05 or less, about 0.04 or less, about 0.03 or less, or about 0.02 or less.
  • the spacers When a plurality of spacers are arranged to have a spacing normal distribution of the above-described type, when the optical device is implemented through the substrate, the spacers maintain a uniform cell gap between the substrates while causing a so- So that uniform optical characteristics can be ensured.
  • the normal arrangement state is a state in which a plurality of spacers are arranged on the base layer so as to form an equilateral triangle, a square, or a regular hexagon having the same length on all sides. 17 is a state in which spacers are arranged to form the square as an example.
  • the length P of one side of the square in this state may be equal to the normal pitch mentioned above.
  • a circle area having a radius having a length proportional to the length P of one side is designated on the basis of a point where one spacer exists, and the one spacer is randomly
  • the program is set to move to For example, FIG.
  • FIG. 17 schematically shows a form in which a circle area having a radius of 0.5% of a length of 50% of the length P is set and the spacer moves to an arbitrary point in the area.
  • the above arrangement can be achieved by applying the above movement to spacers of at least 80%, 85%, 90%, 95% or 100% (all spacers).
  • the ratio to the length P which is the radius of the original area
  • the ratio to the length P can be defined to be irregular.
  • the irregularity degree is about 50%.
  • the irregularity in the design scheme is at least about 5%, at least about 10%, at least about 15%, at least about 20%, at least about 25%, at least about 30%, at least about 35% , About 45% or more, about 50% or more, about 55% or more, about 60% or more, or about 65% or more. In one example, the irregularity may be about 95% or less, about 90% or less, about 85% or less, or about 80% or less.
  • the steady state starts from a square.
  • the steady state may be another shape such as an equilateral triangle or a regular hexagon. In this case, the above arrangement can also be achieved.
  • the means for designing the arrangement of the spacers in the above manner is not particularly limited, and a known random number coordinate program, for example, a CAD, MATLAB, STELLA or Excel random number coordinate program can be used.
  • a mask having a pattern according to the design may be manufactured, and the spacer may be implemented by applying the mask to the lithography or imprinting method described above have.
  • the spacer of the present application exhibits excellent adhesion to the base layer or an element (for example, the electrode layer) of the base layer to which the spacer is in contact.
  • an adhesive tape having a peeling force of about 3.72 N / 10 mm to 4.16 N / 10 mm is attached to the surface of the substrate layer on which the spacer is formed, and even if the adhesive tape is peeled off, the pattern of the spacer does not substantially disappear .
  • the adhesive tape may be, for example, a tape known as Nichiban Tape CT-24.
  • the peel force measured at a peel angle of 180 degrees in accordance with JIS Z 1522 standard is about 3.72 N / 10 mm to 4.16 N / 10 mm.
  • the nicotine tape CT-24 After attaching the nicotine tape CT-24 to the surface of the base layer on which the spacers were formed with a rectangular attachment area of 24 mm in width and 40 mm in length, the nicotine tape CT-24 was applied at a rate of about 30 mm / s 13% or less, 11% or less, 9% or less, 8% or less, 7% or less, 6% or less, or less than 10% 5% or less, 4% or less, 3% or less, 2% or less, 1% or less, or 0.5% or less.
  • the loss rate may be a percentage of the number of spacers that have been lost after peeling off the adhesive tape, relative to the number of all the spacers existing within the adhesion area.
  • the number of spacers may be in the range of 10,000 to 40,000, and the proportion of the spacers to be lost among the spacers may be maintained within the above range.
  • the black spacer in order to satisfy the optical density described above, a darkening material such as a dye or a pigment is included. Since the hardening rate of the spacer material is inhibited by such a darkening material, it's difficult.
  • the spacer produced in the manner referred to in the present application may have excellent adhesion while having the optical density described above due to its unique hemispherical shape and manufacturing method.
  • the orientation film is formed on the surface of the spacer, and the spacer can be stably retained even when the alignment treatment such as rubbing is progressed, so that it is possible to finally manufacture an excellent performance product.
  • the substrate on which the spacer is formed can be maintained in a state in which the protective adhesive film is adhered to the surface on which the spacer is formed until it is applied to an actual product. In such a structure, .
  • the substrate may further comprise a protective film.
  • the substrate may further include a protective adhesive film adhered to a surface of the base layer where the spacer is formed.
  • a known protective adhesive film can be used without any particular limitation.
  • Fig. 18 is a view showing the protective film attached on the substrate shown in Fig. 2.
  • the protective film usually includes a base film 500 and a pressure-sensitive adhesive layer 400 formed on one surface of the base film 500.
  • the present application also relates to a method of making the substrate.
  • the manufacturing method may include a step of curing the photo-curable material forming the black column spacer formed on the base layer in a state in which the photo-curable material is pressed with an imprinting mask containing a light-shielding layer.
  • the type of photocurable material to be used in the above is not particularly limited and a well-known black column spacer material can be used.
  • the imprinting mask including the light shielding layer for example, a mask exemplarily shown in Fig. 13 may be used. Therefore, the imprinting mask including the light shielding layer has a concave hemispherical shape (9011 in Fig. 13) formed on one surface of the light transmissive body (9 in Fig. 13) Shielding film (902 in Fig. 13) may be formed on the surface having no shape. As described above with reference to Fig. 14, the surface on which the concave hemispherical shape of the mask is formed may be formed on the photocurable material The photo-curable material can be cured in a state of being in close contact.
  • an electrode layer is formed on the base layer, and the photo-curable material can be formed on the electrode layer.
  • the specification (for example, diameter, height, etc.) of the concave portion formed in the above process is not particularly limited and can be formed according to the desired hemispherical shape. That is, since the height, the width, and the like of the hemispherical shape substantially follow the shape of the concave portion of the mask, the hemispherical shape control is possible through the hemispherical shape. Also, the amount of light to be irradiated, for example ultraviolet light, is adjustable considering the material used.
  • the present application is also directed to an optical device formed using such a substrate.
  • An exemplary optical device of the present application may include a second substrate opposing the substrate and the substrate and spaced apart from the substrate by a spacer of the substrate.
  • a light-modulating layer may be present in an interval between the two substrates.
  • the term optical modulation layer in the present application may include all known types of layers capable of changing at least one of the characteristics such as the polarization state, transmittance, color tone, and reflectance of the incident light according to purposes.
  • the light modulating layer may be a liquid crystal layer that is switched between a diffusion mode and a transmissive mode by on-off of a voltage, for example, a vertical electric field or a horizontal electric field, A liquid crystal layer switched between a transmissive mode and a cut-off mode, a liquid crystal layer switched between a transmissive mode and a color mode, or a liquid crystal layer switching between color modes of different colors.
  • a light modulating layer for example, a liquid crystal layer, capable of performing the above-described actions is variously known.
  • a liquid crystal layer used in a typical liquid crystal display.
  • the light modulating layer may include various types of so-called guest host liquid crystal layers, polymer dispersed liquid crystals, pixel-isolated liquid crystals, A particle device (Suspended Particle Deivice) or an electrochromic device.
  • the polymer dispersed liquid crystal layer is a superordinate concept including a pixel isolated liquid crystal (PILC), a polymer dispersed liquid crystal (PDLC), a polymer network liquid crystal (PNLC), a polymer stabilized liquid crystal .
  • the polymer dispersed liquid crystal layer (PDLC) may include, for example, a polymer network and a liquid crystal region containing a liquid crystal compound that is dispersed in a state of being phase-separated from the polymer network.
  • optical modulation layer is not particularly limited, and any known method may be employed without any limitations depending on the purpose.
  • the optical device may further include additional known functional layers such as a polarizing layer, a hard coating layer, and / or an antireflection layer, if necessary.
  • additional known functional layers such as a polarizing layer, a hard coating layer, and / or an antireflection layer, if necessary.
  • the present application is directed to a substrate and an optical device using such a substrate and the like.
  • the present application can be applied to an optical device capable of adjusting the transmittance, hue and / or reflectivity of light, thereby preventing the occurrence of light leakage and the like, and securing a uniform optical performance.
  • FIGS 1, 2 and 18 are schematic diagrams of the forms of the substrate of the present application.
  • Figs. 3 to 12 are schematic views for explaining the shape of the hemispherical spacer of the present application. Fig.
  • FIG. 13 is a view showing the shape of a mask which can be used for manufacturing the spacer of the present application.
  • FIG. 14 is a schematic diagram of a process of fabricating a spacer using the mask shown in Fig.
  • 15 and 16 are schematic diagrams of exemplary cross sections of an alignment film formed on a spacer.
  • FIG. 17 is a diagram for explaining a method of implementing the irregularity.
  • Figures 19 and 20 are photographs of hemispherical spacers produced in the examples.
  • 21 is a view of a mask applied to the production of a spacer of a comparative example.
  • Figs. 24 to 26 are photographs showing the results of the adhesion tests of Examples or Comparative Examples. Fig.
  • Optical density described in the following examples or comparative examples is the result of measuring optical density (OD) mentioned in the examples or comparative examples in the following manner.
  • Each UV resin used in the preparation of the column spacer in Examples or Comparative Examples was coated on a substrate layer such as a poly (ethylene terephthalate) film or a polycarbonate film or a transparent layer formed on the substrate layer (wavelength: about 365 nm, ultraviolet ray irradiation amount: 2,200 to 4,400 mJ / cm 2 ) to form a layer on the substrate to form a layer on the substrate To form a phosphorus layer.
  • a substrate layer such as a poly (ethylene terephthalate) film or a polycarbonate film or a transparent layer formed on the substrate layer (wavelength: about 365 nm, ultraviolet ray irradiation amount: 2,200 to 4,400 mJ / cm 2 ) to form a layer on the substrate to form a layer on the substrate To form a phosphorus layer.
  • the thickness of the cured layer is measured using an Optical Profiler measuring instrument (manufacturer: Nano System, trade name: Nano View-E1000). Then, the transmittance and optical density of the formed layer are measured using a measuring device (manufacturer: x-rite, trade name: 341C).
  • An imprinting mask including a light shielding layer of the type shown in FIG. 13 was prepared, and hemispherical black spacer was prepared using the imprinting mask.
  • the imprinting mask is formed with a concave portion 9011 through a imprinting mold 901 in a poly (ethylene terephthalate) body 9 according to the form shown in FIG. 13, and a concave portion 9011 is formed (AlO x N y) 902 was formed on the surface where the black layer 902 and the recesses 9011 were not formed, and then a release layer was formed on the black layer 902 and the recesses 9011.
  • the concave portion was formed into a hemispherical shape having a width of approximately 24 to 26 mu m and a height of approximately 9 to 10 mu m.
  • the concave portion was formed so that the arrangement of the spacers was about 70% in the degree of irregularity shown in Fig.
  • a crystalline ITO (Indium Tin Oxide) electrode layer was formed on a PET (poly (ethylene terephthalate)) base layer.
  • a mixture of a conventional UV-curable acrylate binder, an initiator and a dispersing agent (UV resin) used in the production of a column space on the electrode layer was coated with carbon black as a darkening material in a ratio of about 3 wt%
  • the black UV resin prepared by mixing is dropped by about 2 to 3 mL and the mixture is dropped by the imprinting mask to form a base layer, an electrode layer, a black layer, a UV resin layer, and an imprinting mask layer (Ultraviolet ray irradiation amount: 1,200 mJ / cm 2 ) by irradiating ultraviolet rays in a state in which a laminated body including the laminate was formed.
  • the optical density of the black UV resin material was about 1.9 when measured in the manner mentioned above.
  • the uncured UV resin layer 200 was removed (developed) to form a black semi-spherical spacer.
  • 19 shows a photograph of a hemispherical spacer manufactured in the above manner.
  • the hemispherical spacer includes a portion reflecting a shape (hemisphere) of the imprinting mask (a replica region) and a residual layer reflecting imprinting travel.
  • the hemispherical spacer exhibited a distribution (average: 11.26 mu m) and a diameter distribution (average: 25.1 mu m) of about 25 to 26 mu m in height (replica area + residual film area) of about 10.5 to 12 mu m.
  • a spacer was prepared in the same manner as in Example 1, except that the ratio of carbon black was adjusted to about 2 wt% in the production of the black UV resin.
  • the optical density of the black UV resin material was about 1.3 when measured in the manner mentioned above.
  • 20 shows a photograph of a hemispherical spacer manufactured in the above manner. As in the case of FIG. 19, the hemispherical spacer of FIG. 20 also includes a portion (replica region) reflecting the shape (hemisphere) of the imprinting mask and a residual layer reflecting imprinting travel.
  • the hemispherical spacer showed a distribution (average: 11.26 mu m) and a diameter distribution (average: 24.1 mu m) of about 23.5 mu m to 25.5 mu m in height (replica area + residual film area) of about 10.5 mu m to 12 mu m.
  • a black column spacer was produced using a known plane photomask as shown in Fig. 21, a light shielding layer 2000 is formed on one side of a main body 1000, which is a polyester film, and then a protective layer 3000 is formed. As shown in FIG. 21, Commercial products of the company were applied.
  • the exposed pattern of the photomask has a circular shape with a diameter of about (25 ⁇ 2) ⁇ m.
  • the black UV resin As the black UV resin, a certain amount of a black ball spacer for controlling the pattern thickness was introduced into the same black UV resin as that used in Example 1.
  • the optical density of the black UV resin was about 1.9 when measured in the above-mentioned manner.
  • the black UV resin was dropped on a substrate having an ITO electrode layer formed on one surface in the same manner as in Example 1, and then the above-mentioned black UV resin was pressed by the photomask to form a base layer, an electrode layer, a UV resin layer, After forming a laminate including a mask layer, ultraviolet light was irradiated and the uncured black UV resin layer was removed to prepare a black column spacer.
  • FIG. 22 and 23 are photographs of the black spacer formed in the above manner, FIG. 22 shows a case where the ultraviolet irradiation amount is about 4,700 mJ / cm 2 at the time of UV curing (Comparative Example 1), FIG. 23 shows the case where the ultraviolet irradiation amount is about 18,700 mJ / cm < 2 >.
  • the inverted-conical (constant tapered) spacer was formed in the case of Comparative Example 1, and the spacer of the columnar (vertical tapered) shape was formed in Comparative Example 2, A hemispherical spacer was not formed. That is, unless the imprinting mask containing the light-shielding layer according to the present application is applied, a large amount of ultraviolet radiation dose is required for forming the spacer, and a hemispherical spacer can not be obtained even if the ultraviolet radiation dose is controlled.
  • Fig. 24 is a view showing the disappearance of the spacers before and after peeling in Example 1, with the left side showing before peeling, and the right side showing peeling.
  • Fig. 25 is a view showing the disappearance of the spacers before and after peeling in Example 2, with the left side showing before peeling, and the right side showing peeling.
  • the disappearance rate was 0%.
  • a known alignment film was formed on the substrate prepared in Examples 1 and 2, and a conventional liquid crystal cell capable of controlling the light transmittance was formed using each substrate on which the alignment film was formed, and then the change in transmittance according to the applied voltage was observed.
  • the transmittance of the substrates prepared in Examples 1 and 2 was changed in accordance with the increase of the driving voltage while the shape of the hemispherical black spacer was maintained in the liquid crystal cell, and the light leakage was also suppressed at the time of black display.

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Abstract

La présente invention concerne un substrat sur lequel un espaceur présentant une forme spécifique est formé, un substrat comprenant un film d'alignement formé sur le l'espaceur et un dispositif optique utilisant un tel substrat. La présente invention peut présenter une structure qui peut former un espaceur qui atteint une opacité souhaitée et présente une hauteur de pas importante.
PCT/KR2018/008549 2017-07-27 2018-07-27 Substrat WO2019022564A1 (fr)

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JP2019571647A JP6953668B2 (ja) 2017-07-27 2018-07-27 基板
CN201880048881.0A CN110959135B (zh) 2017-07-27 2018-07-27 基板
EP18837543.0A EP3660581B1 (fr) 2017-07-27 2018-07-27 Substrat, méthode de production d'un substrat et dispositif optique
US16/751,866 US11428994B2 (en) 2017-07-27 2020-01-24 Substrate

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KR10-2017-0095465 2017-07-27
KR20170095465 2017-07-27
KR1020180087289A KR102118371B1 (ko) 2017-07-27 2018-07-26 기판
KR10-2018-0087289 2018-07-26

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Publication number Priority date Publication date Assignee Title
JP2023509126A (ja) * 2020-02-18 2023-03-07 エルジー・ケム・リミテッド パターンフィルム、パターンフィルムの製造方法、およびこれを含む透過度可変デバイス
JP7443645B2 (ja) 2020-02-18 2024-03-06 エルジー・ケム・リミテッド パターンフィルム、パターンフィルムの製造方法、およびこれを含む透過度可変デバイス

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