WO2019019313A1 - 传送装置、基板离子植入系统以及方法 - Google Patents

传送装置、基板离子植入系统以及方法 Download PDF

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Publication number
WO2019019313A1
WO2019019313A1 PCT/CN2017/102539 CN2017102539W WO2019019313A1 WO 2019019313 A1 WO2019019313 A1 WO 2019019313A1 CN 2017102539 W CN2017102539 W CN 2017102539W WO 2019019313 A1 WO2019019313 A1 WO 2019019313A1
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WIPO (PCT)
Prior art keywords
substrate
ion implantation
chamber
magnetic pole
group
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Ceased
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PCT/CN2017/102539
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English (en)
French (fr)
Inventor
谢锐
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US15/577,114 priority Critical patent/US20190385879A1/en
Publication of WO2019019313A1 publication Critical patent/WO2019019313A1/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3202—Mechanical details, e.g. rollers or belts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H01J37/3172—Maskless patterned ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3204—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations using magnetic elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/204—Means for introducing and/or outputting objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs

Definitions

  • the present invention relates to the field of display panel manufacturing, and more particularly to a transfer device, a substrate ion implantation system, and a method.
  • the channel layer semiconductor material of the TFT (Thin Film Transistor) backplane mainly includes amorphous silicon (a-Si), microcrystalline silicon (u-Si), low temperature polysilicon (LTPS), Single crystal silicon, organic matter, oxides, and the like.
  • a-Si amorphous silicon
  • u-Si microcrystalline silicon
  • LTPS low temperature polysilicon
  • Single crystal silicon organic matter, oxides, and the like.
  • OLED Organic Light Emitting Diode
  • LTPS Low-temperature polysilicon
  • TFT backplane technology in order to prepare a polysilicon channel layer, amorphous silicon is deposited on the glass substrate by ion implantation in the process, and then the amorphous silicon film is absorbed by laser or non-laser. The energy, the atoms are rearranged to form a polysilicon structure.
  • the largest size of ion implantation equipment in the LTPS industry of OLED is G6 generation glass size equipment.
  • LTPS technology will be applied in the field of large-size display, which requires the application of OLED OLED technology to size.
  • the application of current ion implantation equipment to large-sized glass substrates results in high fragmentation rates and low productivity.
  • the technical problem to be solved by the present invention is to provide a transfer device, a substrate ion implantation system, and a method capable of improving the productivity of the ion implantation system.
  • a technical solution adopted by the present invention is to provide a transmitting device, the transmitting device comprising:
  • first rail a first rail, a second rail and a carrying platform, wherein the first rail and the second rail are disposed in parallel on the two sides of the carrying platform;
  • the first rail and the second rail are respectively provided with a first magnetic pole group, and the loading platform is provided with a second magnetic pole group, and the second magnetic pole group is disposed corresponding to the first magnetic pole group, and can be changed between the first magnetic pole group and the second magnetic pole group
  • the magnetic action drives the carrier to reciprocate in the direction in which the rail extends.
  • a substrate ion implantation system comprising:
  • a substrate holder an ion implantation device connected to the substrate stage, the substrate can enter the ion implantation device from the substrate platform; the ion implantation device includes an operation cavity, and the substrate can be transferred to the operation cavity through the ion implantation device to perform ions Implant; a transfer chamber for transferring the substrate after ion implantation to the substrate stage.
  • another technical solution adopted by the present invention is to provide a method for substrate ion implantation, which comprises: performing ion implantation using the substrate ion implantation system in the above embodiment, and removing the substrate from the substrate.
  • the cap is transported to the ion implantation device; the substrate is ion implanted in the ion implantation device; and the substrate after ion implantation is transferred back to the substrate cap by the transfer chamber.
  • the invention has the beneficial effects that the substrate needs to be erected when the substrate is ion implanted compared to the prior art, and the operating chamber is occupied when the vacuum arm transfers the substrate between the operating chamber and the transfer chamber, and the ion of the invention
  • the implant system includes a transfer chamber that will perform substrate back-transfer after ion implantation, reducing the time required to occupy the operation chamber, and improving the productivity of the ion implantation system.
  • FIG. 1 is a schematic structural view of an embodiment of a conveying device of the present invention
  • Figure 2 is a schematic structural view of the side view structure of the conveyor shown in Figure 1;
  • FIG. 3 is a schematic structural view of an embodiment of a support body of the present invention.
  • Figure 4 is a schematic view showing the structure of another embodiment of the support of the present invention.
  • FIG. 5 is a schematic structural view of an embodiment of a substrate ion implantation system of the present invention.
  • FIG. 6 is a schematic flow chart of an embodiment of a method for implanting a substrate ion implantation according to the present invention.
  • FIG. 7 is a schematic structural view of a substrate ion implantation system corresponding to the method shown in FIG. 6.
  • FIG. 7 is a schematic structural view of a substrate ion implantation system corresponding to the method shown in FIG. 6.
  • FIG. 1 is a schematic structural view of an embodiment of a conveying device of the present invention
  • FIG. 2 is a structural schematic view of a side view structure of the conveying device of FIG.
  • the conveying device 100 includes a first rail 101, a second rail 102, and a carrying platform 103.
  • the first rail 101 and the second rail 102 are disposed in parallel on both sides of the carrying platform 103.
  • the first magnetic pole group 104 is symmetrically disposed on the first rail 101 and the second rail 102, and the first magnetic pole group 104 is a permanent magnet group in which the N pole and the S pole are sequentially arranged in a cross arrangement, as understood by those skilled in the art, the first The magnetic pole group 104 is a permanent magnet group, that is, the magnetic properties of the N pole and the S pole of the first magnetic pole group 104 are unchanged, and the order of the N pole and the S pole in the first magnetic pole group 104 is unchanged, and the first magnetic pole group
  • the number of the permanent magnets in the 104 is determined according to the size of the first rail 101 and the second rail 102 and the size of the permanent magnet, which is not limited herein.
  • the carrying platform 103 includes a top plate 201 of a unitary structure, a first side plate 202, and a second side plate 203.
  • the top plate 201 is suspended above the first rail 101 and the second rail 102.
  • the first side plate 202 and the second side plate 203 are disposed on a side of the loading platform 103 adjacent to the first rail 101 and the second rail 102.
  • the first side panel 202 corresponds to the first rail 101, and the second side panel 203 is disposed corresponding to the second rail 102.
  • the first side plate 202 and the second side plate 203 are respectively symmetrically disposed with a second magnetic pole group 105.
  • the second magnetic pole group 105 includes a first coil group 106 and a second coil group 107.
  • the first side plate 202 corresponds to the first rail 101.
  • the first magnetic pole group 104 is provided with a first coil group 106
  • the first magnetic pole group 104 corresponding to the second rail 102 of the second side plate 203 is provided with a second coil group 107, a first coil group 106 and a second coil group 107.
  • the current directions of the coils of the first coil group 106 and the second coil group 107 are different from those of the adjacent coils, and the direction of the current passing through the first coil group 106 and the second coil group 107 is changed, thereby changing the
  • the magnetic poles of a coil group 106 and the second coil group 107, the first magnetic pole group 104 on the first rail 101 and the second rail 102 are respectively matched with the first coil group 106 and the second coil group 107 whose magnetic poles are constantly changing.
  • the drive stage 103 reciprocates in the extending direction of the first rail 101 and the second rail 102.
  • the isotropic magnetic poles are attracted, and the opposite magnetic poles are repulsive. Therefore, the first coil group 106 and the first magnetic pole group 104 on the first rail 101 and the second rail 102 are respectively changed with the first coil group 106 and the magnetic pole.
  • the two coil groups 107 are coupled to each other to drive the stage 103 to reciprocate in the extending direction of the first rail 101 and the second rail 102.
  • the size and current magnitude of the coils in the first coil group 106 and the second coil group 107, and the current direction change rate are based on the weight of the stage 103, the moving speed of the stage 103, and the permanent magnets in the first pole group 105.
  • the size of the magnetic force is not limited here.
  • the first magnetic pole group 104 is a permanent magnet group
  • the second magnetic pole group 105 is a variable magnetic pole group.
  • the first magnetic pole group 104 is coupled with the second magnetic pole group 105, thereby driving the loading platform 103 to move, obviously, as in the field.
  • the first magnetic pole group may be a variable magnetic pole group
  • the second magnetic pole group may be a permanent magnet group.
  • the clamping method may also be driven by the cooperation method described in the above embodiments, or the first magnetic pole group and the first magnetic pole group
  • the second magnetic pole group is the same variable magnetic pole group, and only the magnetic poles have the same conversion rate, and the magnetic poles in the first magnetic pole group and the magnetic poles in the second magnetic pole group are opposite in magnetism, and the two attract each other. This is not limited.
  • FIG. 3 is a schematic structural view of an embodiment of the support body of the present invention.
  • the carrying platform 103 further includes a first supporting body 301 and a second supporting body 302.
  • the first supporting body 301 and the second supporting body 302 are provided with a third magnetic pole group 303, and the third magnetic pole group 303 is opposite to the first
  • the top of the magnetic pole group 104 is disposed, the third magnetic pole group 303 is a permanent magnet group, and the arrangement order is the same as that of the permanent magnets in the first magnetic pole group 104, so that the first magnetic pole group 104 and the third magnetic pole group 303 appear to be mutually exclusive.
  • the repulsive force between the first magnetic pole group 104 and the third magnetic pole group 303 is balanced with the gravity of the loading platform 103, thereby controlling the loading platform 103 and the first rail 101 and the second rail 102 to be vertical.
  • the gap D in the straight direction is obviously limited according to the structural requirements of the conveying device 100, and is not limited herein.
  • FIG. 4 is a schematic structural view of another embodiment of the support body of the present invention.
  • the loading platform 103 further includes a first supporting body 401 and a second supporting body 402.
  • the first supporting body 401 and the second supporting body 402 are disposed with a third magnetic pole group 403, and the third magnetic pole group 403 is opposite to the first
  • the bottom of the magnetic pole group 104 is disposed, the third magnetic pole group 403 is a permanent magnet group, and the arrangement order is opposite to the arrangement order of the permanent magnets in the first magnetic pole group 104, so that the first magnetic pole group 104 and the third magnetic pole group 403 appear to attract each other.
  • the attractive force between the first magnetic pole group 104 and the third magnetic pole group 403 is balanced with the gravity of the loading platform 103, thereby controlling the loading platform 103 and the first rail 101 and the second rail 102 to be vertical.
  • the gap W in the straight direction is obviously limited according to the structural requirements of the conveying device 100, and is not limited herein.
  • FIG. 5 is a schematic structural view of an embodiment of an ion implantation system of the present invention.
  • the ion implantation system 500 includes a substrate holder 501 and an ion implantation device 502 connected to the substrate holder.
  • the substrate can enter the ion implantation device 502 from the substrate holder 501.
  • the first transport mechanism 503 is used to transport the substrate from the substrate stage 501 to the ion implantation apparatus 502 by the first transport mechanism 503.
  • the transfer of the substrate at the ion implantation device 502 is achieved by the transfer device 100 of the above embodiment, and the transfer device 100 is disposed at the bottom of the ion implantation device 502, and will not be described herein.
  • the first transport mechanism 503 can be an automated operating mechanism such as a robot arm, which is not limited herein. As understood by those skilled in the art, the first transport mechanism 503 works by clamping the substrate from a platform to the substrate. Another platform to carry.
  • the ion implantation device 502 includes an operation chamber 504 for transferring the substrate entering the ion implantation device 502 to the operation chamber 504 for ion implantation, and the substrate needs to be erected for ionization compared to the prior art.
  • the ion source 505 in the operation chamber 504 in the embodiment is disposed at a position facing the front surface of the substrate, and the substrate can be ion implanted without operating the substrate, thereby reducing the probability of fragmentation due to the position of the adjustment substrate.
  • ion implantation is a conventional means for those skilled in the art, and will not be described herein.
  • the substrate ion implantation system 500 includes a transfer chamber 506 for transferring back the substrate after ion implantation to the substrate stage 501.
  • the ion implantation device 502 is connected to the transfer chamber 506 by a second transport mechanism 507, and the substrate is transported from the ion implantation device 502 to the transfer chamber 506 by the second transport mechanism 507, and is transferred back to the substrate through the transfer chamber 506.
  • the stage 501, the substrate stage 501 and the transfer chamber 506 are connected by a first transport mechanism 503, and the substrate returned by the transfer chamber 506 is transported to the substrate stage 501.
  • the transfer chamber 506 includes the transfer device 100 in the above embodiment.
  • the conveying device 100 is disposed at the bottom of the transfer chamber 506 for transferring the substrate, and details are not described herein.
  • the second transport mechanism 507 has the same structure as the first transport mechanism 503 in the above embodiment, and details are not described herein again.
  • the ion implantation device 502 further includes a first exchange cavity 508, a second exchange cavity 509, a first buffer cavity group 510, and a second buffer cavity group 511.
  • the first exchange cavity 508 is disposed in the ion implantation device. 502 is adjacent to one end of the first transport mechanism 503, and the second exchange chamber 509 is disposed at one end of the ion implantation device 502 near the second transport mechanism 507.
  • the first exchange chamber 508 and the second exchange chamber 509 are vacuum chambers for use as The substrate is exchange medium from the atmosphere into the vacuum environment.
  • the first buffer chamber group 510 and the second buffer chamber group 511 respectively include at least two sets of buffer chamber units 512.
  • the first buffer chamber group 510 is disposed between the first exchange chamber 508 and the operation chamber 504, and the second buffer chamber group 511 is disposed.
  • the buffer chamber unit 512 is a vacuum chamber for buffering when the substrate is transported in the ion implantation device 502, thereby reducing collision between the substrate and the ion implantation device 502. Reduce the wear of the substrate.
  • the first buffer chamber group 510 and the buffer chamber unit 512 in the second buffer chamber group 511 are determined according to the needs of the substrate ion implantation process.
  • the first The buffering unit 510 and the second buffering chamber group 511 respectively include two sets of buffering chamber units 512 as an example to describe the ion implantation system 500 of the present embodiment, and thus the number of the buffering chamber units 512 in the embodiment is not limited.
  • the first buffer chamber group 510 and the second buffer chamber group 511 may respectively include a group of buffer chamber units 512.
  • the first exchange cavity 508 and the first handling mechanism 503 are connected by a gate valve 513.
  • the second exchange chamber 509 and the second transport mechanism 507 are connected by a gate valve 513, and the first exchange chamber 508 and the first buffer chamber group 510 are connected by a gate valve 513, and the second exchange chamber 509 and the second
  • the buffer chamber groups 511 are connected by a gate valve 513.
  • the buffer chamber units 512 of the first buffer chamber group 510 are connected by a gate valve 513, and each group of buffer chamber units 512 of the second buffer chamber group 511 is connected. They are connected by a gate valve 513.
  • the gate valve 513 described in the above embodiment is a separation medium between different chambers and stations.
  • the corresponding gate valve is opened to allow After the substrate passes, after the substrate passes, the corresponding gate valve is closed, maintaining the vacuum degree of different chambers or stations, thereby avoiding the influence on the vacuum environment of the chamber or the station, thereby affecting the process of the substrate.
  • the gate valve 513 can be a valve assembly such as a socket valve or a wedge gate valve, which can conveniently block the space between different chambers or stations, and is not limited herein.
  • the ion implantation system of the present invention provides a transfer cavity, the transfer cavity will carry back the substrate after ion implantation, reducing the time for occupying the operation cavity, and does not need to adjust the substrate position during ion implantation. It can increase the productivity of the ion implantation system and reduce the fragmentation rate of the substrate.
  • FIG. 6 is a schematic flow chart of an embodiment of a substrate ion implantation method according to the present invention
  • FIG. 7 is a schematic structural view of a substrate ion implantation system corresponding to the method shown in FIG. It should be noted that the substrate ion implantation method in the embodiment is realized by the structure of the substrate ion implantation system in the above embodiment. The method includes but is not limited to the following steps:
  • S601 transporting the substrate from the substrate platform 701 to the ion implantation device 702;
  • the substrate is transported from the substrate platform 701 to the ion implantation device 702 by the first transport mechanism 703.
  • the specific structure and operation of the first transport mechanism 703 have been described in detail in the above embodiments. This will not go into details.
  • the substrate is transferred to the operation chamber 704 of the ion implantation device 702 in the ion implantation device 702 by the transfer device 100 in the above embodiment, and the substrate is ion implanted.
  • the ion source 705 of the operation chamber 704 is disposed on the front surface of the substrate.
  • the position of the substrate is not required to be adjusted, and ion implantation can be performed, which can reduce the wear and even fragmentation of the substrate due to the position of the adjustment substrate. The chance.
  • the substrate after ion implantation is transported to the transfer chamber 706 by the second transport mechanism 707.
  • the specific structure and operation mode of the second transport mechanism 707 have been elaborated in the above embodiments. I won't go into details.
  • the conveying device 100 described in the above embodiment is disposed at the bottom of the transfer chamber 706, and the transfer chamber 706 transfers the ion-implanted substrate back to the substrate stage 701 through the transfer device 100.
  • the present invention provides a transfer chamber, the transfer chamber will perform back-transfer of the substrate after ion implantation, reducing the time for occupying the operation chamber, and does not need to adjust the position of the substrate during ion implantation, thereby improving ion implantation.
  • the capacity of the system reduces the fragmentation rate of the substrate.

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

公开了一种传送装置（100）、基板离子植入系统（500）以及方法。该系统（500）包括：基板承台（103）和与基板承台（103、501）连接的离子植入装置（502），基板可从基板承台（103、501）进入离子植入装置（502）；离子植入装置（502）包括操作腔（504），基板可通过离子植入装置（502）被传送至操作腔（504）中进行离子植入；传送腔（506），用于将进行离子植入后的基板回传至基板（103、501）。通过上述方式，能够提高离子植入系统（500）的产能。

Description

传送装置、基板离子植入系统以及方法
【技术领域】
本发明涉及显示面板制造领域，特别是涉及一种传送装置、基板离子植入系统以及方法。
【背景技术】
在OLED（有机发光二极管）制备工艺中，TFT（薄膜晶体管）背板的沟道层半导体材料主要有非晶硅（a-Si）、微晶硅（u-Si）、低温多晶硅（LTPS）、单晶硅、有机物和氧化物等。应用于OLED中最成熟的TFT背板技术是低温多晶硅（LTPS）技术。
TFT背板技术应用的低温多晶硅（LTPS）技术，为了制备多晶硅沟道层，工艺流程中通过离子植入在玻璃基板上沉积非晶硅，而后采用激光或者非激光的方式使非晶硅薄膜吸收能量，原子重新排列以形成多晶硅结构。
目前，OLED的LTPS产业中的离子植入设备最大尺寸为G6代玻璃尺寸设备，随着OLED的发展，LTPS技术将会应用在大尺寸显示屏领域，这就需要OLED的LTPS技术应用到尺寸更大的玻璃基板上，目前的离子植入设备应用到大尺寸玻璃基板上会导致破片率高，并且产能较低。
【发明内容】
有鉴于此，本发明主要解决的技术问题是提供一种传送装置、基板离子植入系统以及方法，能够提高离子植入系统的产能。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种传送装置，该传送装置包括：
第一导轨、第二导轨以及承载台，第一导轨和第二导轨平行对称设置于承载台的两侧；
第一导轨和第二导轨分别设有第一磁极组，承载台设有第二磁极组，第二磁极组与第一磁极组对应设置，可通过改变第一磁极组与第二磁极组之间的磁性作用进行驱动承载台在导轨延伸方向上往复移动。
为解决上述技术问题，本发明采用的又一个技术方案是：提供一种基板离子植入系统，该系统包括：
基板承台；与基板承台连接的离子植入装置，基板可从基板承台进入离子植入装置；离子植入装置包括操作腔，基板可通过离子植入装置被传送至操作腔中进行离子植入；传送腔，用于将进行离子植入后的基板回传至基板承台。
为解决上述技术问题，本发明采用的又一个技术方案是：提供一种基板离子植入的方法，该方法包括：利用上述实施例中的基板离子植入系统进行离子植入，将基板从基板承台搬运至离子植入装置；在离子植入装置中对基板进行离子植入；利用传送腔将进行离子植入后的基板回传至基板承台。
本发明的有益效果是：相比于现有技术对基板进行离子植入时需要将基板竖起，而且在真空手臂将基板在操作腔和传送腔之间传递时占用操作腔，本发明的离子植入系统包括传送腔，传送腔将进行离子植入后的基板回传，减少占用操作腔的时间，能够提高离子植入系统的产能。
【附图说明】
图1是本发明传送装置一实施例的结构示意图；
图2是图1所示传送装置侧视结构的结构示意图；
图3是本发明支撑体一实施例的结构示意图；
图4是本发明支撑体另一实施例的结构示意图；
图5是本发明基板离子植入系统一实施例的结构示意图；
图6是本发明基板离子植入方法一实施例的流程示意图；
图7是图6所示方法对应的基板离子植入系统的结构示意图。
【具体实施方式】
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。
请参阅图1-2，图1是本发明传送装置一实施例的结构示意图，图2是图1所示传送装置侧视结构的结构示意图。
在本实施例中，传送装置100包括：第一导轨101、第二导轨102以及承载台103。第一导轨101和第二导轨102平行对称设置于承载台103的两侧。第一导轨101和第二导轨102上分别对称设置有第一磁极组104，第一磁极组104为N极和S极依次交叉排列组成的永磁铁组，如本领域技术人员所理解，第一磁极组104为永磁铁组，也就是说，第一磁极组104的N极和S极的磁性不变，且第一磁极组104中N极和S极的排列顺序不变，第一磁极组104中永磁铁的个数根据第一导轨101和第二导轨102的尺寸以及永磁铁的尺寸而定，在此不做限定。
可选地，承载台103包括一体结构的顶板201、第一侧板202、第二侧板203。顶板201悬设在第一导轨101以及第二导轨102上方，第一侧板202以及第二侧板203设置于承载台103靠近第一导轨101以及第二导轨102的一侧，第一侧板202对应第一导轨101设置，第二侧板203对应第二导轨102设置。第一侧板202以及第二侧板203分别对称设置有第二磁极组105，第二磁极组105包括第一线圈组106以及第二线圈组107，第一侧板202上对应第一导轨101的第一磁极组104设有第一线圈组106，第二侧板203上对应第二导轨102的第一磁极组104设有第二线圈组107，第一线圈组106与第二线圈组107为电磁感应线圈组，第一线圈组106与第二线圈组107中各线圈与相邻线圈的电流方向不同，通过改变经过第一线圈组106与第二线圈组107的电流方向，从而改变第一线圈组106与第二线圈组107的磁极，第一导轨101以及第二导轨102上的第一磁极组104分别与磁极不断发生改变的第一线圈组106与第二线圈组107之间配合，驱动承载台103在第一导轨101和第二导轨102的延伸方向上往复移动。
如本领域技术人员所理解，同性磁极相吸，异性磁极相斥，因此通过第一导轨101以及第二导轨102上的第一磁极组104分别与磁极不断发生改变的第一线圈组106与第二线圈组107之间配合，能够驱动承载台103在第一导轨101和第二导轨102的延伸方向上往复移动。显然，第一线圈组106与第二线圈组107中的线圈的尺寸以及电流大小，电流方向变换速率，是根据承载台103的重量，承载台103的移动速度以及第一磁极组105中永磁铁的磁力大小而定，在此不做限定。
本实施例为第一磁极组104为永磁铁组，第二磁极组105为变磁极组，通过第一磁极组104与第二磁极组105配合，从而驱动承载台103移动，显然，如本领域技术人员所理解，第一磁极组可以是变磁极组，第二磁极组可以是永磁铁组，通过上述实施例所阐述的配合方法，也可以驱动承载台103移动，又或者第一磁极组与第二磁极组同为变磁极组，只需两者磁极的变换速率一致，且第一磁极组中的磁极与第二磁极组中相邻的磁极的磁性相反，两者相互吸引即可，在此不做限定。
请参阅图3，图3是本发明支撑体一实施例的结构示意图。
在本实施例中，承载台103还包括第一支撑体301以及第二支撑体302，第一支撑体301以及第二支撑体302设置有第三磁极组303，第三磁极组303相对第一磁极组104的顶部设置，第三磁极组303为永磁铁组且排列顺序与第一磁极组104中的永磁铁排列顺序相同，从而第一磁极组104与第三磁极组303表现为相互排斥，如本领域技术人员所理解，第一磁极组104与第三磁极组303之间的排斥力与承载台103所受重力平衡，进而控制承载台103与第一导轨101以及第二导轨102在竖直方向上的间隙D，显然，承载台103与第一导轨101以及第二导轨102在竖直方向上的间隙D大小是根据传送装置100的结构需求而定，在此不做限定。
请参阅图4，图4是本发明支撑体另一实施例的结构示意图。
在本实施例中，承载台103还包括第一支撑体401以及第二支撑体402，第一支撑体401以及第二支撑体402设置有第三磁极组403，第三磁极组403相对第一磁极组104的底部设置，第三磁极组403为永磁铁组且排列顺序与第一磁极组104中的永磁铁排列顺序相反，从而第一磁极组104与第三磁极组403表现为相互吸引，如本领域技术人员所理解，第一磁极组104与第三磁极组403之间的吸引力与承载台103所受重力平衡，进而控制承载台103与第一导轨101以及第二导轨102在竖直方向上的间隙W，显然，承载台103与第一导轨101以及第二导轨102在竖直方向上的间隙W大小是根据传送装置100的结构需求而定，在此不做限定。
请参阅图5，图5是本发明离子植入系统一实施例的结构示意图。
离子植入系统500包括：基板承台501以及与基板承台连接的离子植入装置502，基板可从基板承台501进入离子植入装置502；基板承台501与离子植入装置502之间通过第一搬运机构503连接，第一搬运机构503用于将基板从基板承台501搬运至离子植入装置502。基板在离子植入装置502的传送是通过上述实施例中的传送装置100实现，传送装置100设置于离子植入装置502底部，在此就不再赘述。
可选地，第一搬运机构503可以为机械手臂等自动化操作机构，在此不做限定，如本领域技术人员所理解，第一搬运机构503工作方式为通过夹持基板将基板从一个平台往另外一个平台搬运。
在本实施例中，离子植入装置502包括操作腔504，用于对进入离子植入装置502的基板传送至操作腔504进行离子植入，相比于现有技术需要将基板竖起进行离子植入，本实施例中的操作腔504中的离子源505设置在正对基板正面的位置，不需要操作基板，就可对基板进行离子植入，从而降低由于调整基板位置造成破片的几率，此处离子植入为本领域技术人员惯用手段，在此就不再赘述。
基板离子植入系统500包括传送腔506，用于将进行离子植入后的基板回传至基板承台501。离子植入装置502与传送腔506之间通过第二搬运机构507连接，通过第二搬运机构507将基板从离子植入装置502中搬运至传送腔506，借由传送腔506回传至基板承台501，基板承台501与传送腔506之间通过第一搬运机构503连接，将通过传送腔506回传的基板搬运至基板承台501，传送腔506包括上述实施例中的传送装置100，传送装置100设置于传送腔506底部，用以传送基板，在此就不再赘述。
可选地，第二搬运机构507与上述实施例中的第一搬运机构503采用相同结构，在此就不再赘述。
在本实施例中，离子植入装置502进一步包括第一交换腔508、第二交换腔509、第一缓冲腔组510以及第二缓冲腔组511，第一交换腔508设置于离子植入装置502的靠近第一搬运机构503一端，第二交换腔509设置于离子植入装置502的靠近第二搬运机构507一端，第一交换腔508与第二交换腔509为真空腔体，用以作为基板由大气进入真空环境的交换媒介。
第一缓冲腔组510以及第二缓冲腔组511分别包括至少两组缓冲腔单元512，第一缓冲腔组510设置于第一交换腔508与操作腔504之间，第二缓冲腔组511设置于第二交换腔509与操作腔504之间，缓冲腔单元512为真空腔体，用于基板在离子植入装置502中传送时起到缓冲作用，减少基板与离子植入装置502间的碰撞，降低基板的磨损。
显然，如本领域技术人员所理解，第一缓冲腔组510以及第二缓冲腔组511中的缓冲腔单元512，是根据基板离子植入制程的需要而确定，在本实施例中，取第一缓冲腔组510以及第二缓冲腔组511中分别包括两组缓冲腔单元512为例进行阐述本实施例的离子植入系统500，并非因此对本实施例中的缓冲腔单元512数进行限定，显然，本实施例中第一缓冲腔组510以及第二缓冲腔组511可以分别包括一组缓冲腔单元512。
可选地，第一交换腔508与第一搬运机构503之间通过闸式阀门513连接 ，第二交换腔509与第二搬运机构507之间通过闸式阀门513连接，第一交换腔508与第一缓冲腔组510之间通过闸式阀门513连接，第二交换腔509与第二缓冲腔组511之间通过闸式阀门513连接，第一缓冲腔组510中的各组缓冲腔单元512之间通过闸式阀门513连接，第二缓冲腔组511中的各组缓冲腔单元512之间通过闸式阀门513连接。
上述实施例所阐述闸式阀门513，为不同腔室以及工位间的分隔媒介，当基板要从一个腔室或工位进入另一个腔室或工位时，对应的闸式阀门打开以让基板通过，在基板通过之后，对应的闸式阀门就会关闭，保持不同腔室或工位各自的真空度，避免对腔室或工位真空环境造成影响，致使影响基板的制程。
可选地，闸式阀门513可以为承插闸阀、楔式闸阀等阀门组件，能够方便阻断不同腔室或工位之间的空间，在此不做限定。
以上可以看出，本发明的离子植入系统通过设置传送腔，传送腔将进行离子植入后的基板回传，减少占用操作腔的时间，并且在进行离子植入时不需要调整基板位置，能够提高离子植入系统的产能，降低基板破片率。
请参阅图6-7，图6是本发明基板离子植入方法一实施例的流程示意图，图7是图6所示方法对应的基板离子植入系统的结构示意图。需要说明的是，本实施例中的基板离子植入方法利用上述实施例中的基板离子植入系统的结构实现。该方法包括但不限于以下步骤：
S601：将基板从基板承台701搬运至离子植入装置702；
在本实施例中，利用第一搬运机构703将基板从基板承台701搬运至离子植入装置702，第一搬运机构703的具体结构以及工作方式已在上述实施例中进行了详细阐述，在此就不再赘述。
S602：在离子植入装置702中对基板进行离子植入；
在本实施例中，基板在离子植入装置702中通过上述实施例中的传送装置100进行传送至离子植入装置702的操作腔704，对基板进行离子植入。如本领域技术人员所理解，操作腔704的离子源705正对基板正面设置，本实施例中不需要调整基板的位置，就可进行离子植入，可以降低由于调整基板位置造成基板磨损甚至破片的几率。
S603：利用传送腔706将进行离子植入后的基板回传至基板承台701；
在本实施例中，将进行离子植入后的基板通过第二搬运机构707搬运至传送腔706，第二搬运机构707的具体结构以及工作方式已在上述实施例中进行了详细阐述，在此就不再赘述。传送腔706底部设置有上述实施例中所阐述的传送装置100，传送腔706通过传送装置100将进行离子植入后的基板回传至基板承台701。
综上所述，本发明通过设置传送腔，传送腔将进行离子植入后的基板回传，减少占用操作腔的时间，并且在进行离子植入时不需要调整基板位置，能够提高离子植入系统的产能，降低基板破片率。
以上所述仅为本发明的实施方式，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (12)

  1. 一种传送装置，其中，所述传送装置包括：第一导轨、第二导轨以及承载台，所述第一导轨和所述第二导轨平行对称设置于所述承载台的两侧；
    所述第一导轨和所述第二导轨分别设有第一磁极组，所述承载台设有第二磁极组，所述第二磁极组与所述第一磁极组对应设置，可通过改变所述第一磁极组与所述第二磁极组之间的磁性作用进行驱动所述承载台在导轨延伸方向上往复移动。
  2. 根据权利要求1所述的装置，其中，所述承载台进一步包括一支撑体，所述支撑体上设有第三磁极组，所述第三磁极组与所述第一磁极组的顶部或者底部对应设置，所述第三磁极组与所述第一磁极组的磁性相反，以用于控制所述承载台与所述第一导轨以及所述第二导轨在竖直方向上的间隙。
  3. 一种基板离子植入系统，其中，所述系统包括：
    基板承台；
    离子植入装置，所述离子植入装置与所述基板承台连接，基板可从所述基板承台进入所述离子植入装置；
    所述离子植入装置包括操作腔，基板可通过所述离子植入装置被传送至所述操作腔中进行离子植入；
    传送腔，用于将进行离子植入后的基板回传至所述基板承台。
  4. 根据权利要求3所述的系统，其中，
    所述基板承台与所述离子植入装置以及所述传送腔分别通过第一搬运机构连接，所述第一搬运机构用于将基板从所述基板承台搬运至所述离子植入装置，并且将从所述传送腔回传的基板搬运至所述基板承台。
  5. 根据权利要求4所述的系统，其中，
    所述离子植入装置的远离所述基板承台一端与所述传送腔的远离所述基板承台一端之间设有第二搬运机构连接，所述第二搬运机构用于将基板从所述离子植入装置搬运至所述传送腔中，进而使传送腔将基板回传至所述基板承台。
  6. 根据权利要求5所述的系统，其中，
    所述离子植入装置进一步包括第一交换腔、第二交换腔、第一缓冲腔组以及第二缓冲腔组，所述第一交换腔设置于所述离子植入装置的靠近所述第一搬运机构一端，所述第二交换腔设置于所述离子植入装置的靠近所述第二搬运机构一端；
    所述第一缓冲腔组以及所述第二缓冲腔组分别包括至少两组缓冲腔单元，所述第一缓冲腔组设置于所述第一交换腔与所述操作腔之间，所述第二缓冲腔组设置于所述第二交换腔与所述操作腔之间。
  7. 根据权利要求6所述的系统，其中，
    所述第一交换腔与所述第一搬运机构之间通过闸式阀门连接 ，所述第二交换腔与所述第二搬运机构之间通过闸式阀门连接，所述第一交换腔与所述第一缓冲腔组之间通过闸式阀门连接，所述第二交换腔与所述第二缓冲腔组之间通过闸式阀门连接，所述第一缓冲腔组中的各组缓冲腔单元之间通过闸式阀门连接，所述第二缓冲腔组中的各组缓冲腔单元之间通过闸式阀门连接。
  8. 根据权利要求7所述的系统，其中，所述第一交换腔、所述第二交换腔、所述第一缓冲腔组中的缓冲腔单元以及所述第二缓冲腔组中的缓冲腔单元均为真空腔体。
  9. 根据权利要求3所述的系统，其中，所述离子植入装置以及所述传送腔分别包括传送装置，所述传送装置设于所述离子植入装置以及所述传送腔的底部，用于在不同腔室以及工位之间传送基板。
  10. 根据权利要求9所述的系统，其中，所述传送装置包括：第一导轨、第二导轨以及承载台，所述第一导轨和所述第二导轨平行对称设置于所述承载台的两侧；
    所述第一导轨和所述第二导轨分别设有第一磁极组，所述承载台设有第二磁极组，所述第二磁极组与所述第一磁极组对应设置，可通过改变所述第一磁极组与所述第二磁极组之间的磁性作用进行驱动所述承载台在导轨延伸方向上往复移动。
  11. 根据权利要求10所述的系统，其中，所述承载台进一步包括一支撑体，所述支撑体上设有第三磁极组，所述第三磁极组与所述第一磁极组的顶部或者底部对应设置，所述第三磁极组与所述第一磁极组的磁性相反，以用于控制所述承载台与所述第一导轨以及所述第二导轨在竖直方向上的间隙。
  12. 一种基板离子植入的方法，其中，所述方法利用一种基板离子植入系统进行基板离子植入，所述基板离子植入系统包括：
    基板承台；
    离子植入装置，所述离子植入装置与所述基板承台连接，基板可从所述基板承台进入所述离子植入装置；
    所述离子植入装置包括操作腔，基板可通过所述离子植入装置被传送至所述操作腔中进行离子植入；
    传送腔，用于将进行离子植入后的基板回传至所述基板承台；
    所述基板离子植入方法包括：
    将基板从基板承台搬运至离子植入装置；
    在所述离子植入装置中对所述基板进行离子植入；
    利用传送腔将进行离子植入后的基板回传至所述基板承台。
PCT/CN2017/102539 2017-07-24 2017-09-21 传送装置、基板离子植入系统以及方法 Ceased WO2019019313A1 (zh)

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