WO2019009429A1 - Wire bonding device - Google Patents

Wire bonding device Download PDF

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Publication number
WO2019009429A1
WO2019009429A1 PCT/JP2018/025859 JP2018025859W WO2019009429A1 WO 2019009429 A1 WO2019009429 A1 WO 2019009429A1 JP 2018025859 W JP2018025859 W JP 2018025859W WO 2019009429 A1 WO2019009429 A1 WO 2019009429A1
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WO
WIPO (PCT)
Prior art keywords
capillary
inert gas
opening
unit
chamber block
Prior art date
Application number
PCT/JP2018/025859
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French (fr)
Japanese (ja)
Inventor
貴義 小作
Original Assignee
株式会社新川
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Publication date
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Publication of WO2019009429A1 publication Critical patent/WO2019009429A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/781—Means for controlling the bonding environment, e.g. valves, vacuum pumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/787—Means for aligning
    • H01L2224/78703—Mechanical holding means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85053—Bonding environment
    • H01L2224/85054—Composition of the atmosphere
    • H01L2224/85075—Composition of the atmosphere being inert
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Definitions

  • the present disclosure relates to a wire bonding apparatus.
  • Patent documents 1 to 3 disclose techniques for suppressing the oxidation of free air balls. These techniques provide an inert gas to the area where free air balls are formed. The techniques disclosed in Patent Documents 1 and 2 place the exhaust port of the gas supply pipe near the tip of the capillary. Then, a cover gas is provided from the outlet toward the ball. According to the technology disclosed in Patent Document 3, an oxidation suppression gas such as nitrogen gas supplied to a closed feeder is jetted toward a capillary tool.
  • an oxidation suppression gas such as nitrogen gas supplied to a closed feeder is jetted toward a capillary tool.
  • Patent Documents 1 to 3 techniques for suppressing free air ball oxidation using an inert gas.
  • Patent Documents 1 to 3 Further improvement in the ability to suppress oxidation is desired.
  • the present disclosure describes a wire bonding apparatus that can improve the ability to inhibit the oxidation of free air balls and thus ensure good bonding quality.
  • a wire bonding apparatus supports a substrate having a first opening in a wire connection region, and has a bonding stage having a second opening for spraying a first inert gas onto the substrate, and wire connection of the substrate.
  • a window clamper having a plurality of third openings that open corresponding to the area, a window clamper for fixing the substrate to the bonding stage, an upper bonding mechanism having a capillary for crimping a wire to the wire connection area, and And the passage of the first inert gas passing through the first opening, the second opening and the third opening as the capillary passes, and the fourth opening for leading the first inert gas to the tip of the capillary And a shutter having a part.
  • the first inert gas supplied from the second opening of the bonding stage is sprayed to the substrate. According to this configuration, it is possible to form an inert gas region around the substrate. Then, after passing through the first opening and the third opening, the flow of the first inert gas blown to the substrate is narrowed at the fourth opening of the shutter. That is, the first inert gas is led to the tip of the capillary of the upper bonding mechanism by the fourth opening. According to this configuration, it is possible to form an inert gas region at the tip of the capillary. Therefore, an inert gas region can be suitably formed around the free air ball at the tip of the capillary. As a result, the ability to suppress the oxidation of the free air ball is improved. Therefore, the wire bonding apparatus can ensure good bonding quality.
  • the ability to suppress the oxidation of free air balls can be improved, and as a result, good bonding quality can be ensured.
  • FIG. 1 is a perspective view showing a first embodiment of a wire bonding apparatus according to the present embodiment.
  • FIG. 2 is an exploded perspective view of the movable arm.
  • FIG. 3 is a plan view showing the left chamber block and the right chamber block.
  • FIG. 4 is a front view showing the left chamber block and the right chamber block.
  • FIG. 5 is a perspective view showing an inert gas region.
  • FIG. 6 is a perspective view showing a second embodiment of the wire bonding apparatus.
  • FIG. 7 is a side view showing a second embodiment of the wire bonding apparatus.
  • FIG. 8 is an enlarged cross-sectional perspective view of the feeder unit.
  • FIG. 9 is a cross-sectional view of a feeder unit and a shutter unit showing the flow of inert gas.
  • FIG. 9 is a cross-sectional view of a feeder unit and a shutter unit showing the flow of inert gas.
  • FIG. 10 is an enlarged perspective view showing the vicinity of the shutter opening of the shutter unit.
  • FIG. 11 is a view showing a cross section of the shutter plate.
  • FIG. 12 is another cross-sectional view of the feeder unit and the shutter unit showing the flow of inert gas.
  • FIG. 13 is a cross-sectional view of a feeder unit and a shutter unit according to a comparative example showing a flow of inert gas.
  • the wire bonding apparatus 1 shown in FIG. 1 crimps a wire to an electrode of a semiconductor chip or an electrode of a substrate.
  • the wire bonding apparatus 1 has a base unit 2 (base portion), a capillary unit 3 (capillary portion), and a chamber unit 4 (chamber member).
  • the base unit 2, the capillary unit 3 and the chamber unit 4 constitute a bonding tool 10 (upper bonding mechanism).
  • the wire bonding apparatus 1 has other components such as a housing and a control device. However, they are omitted in the following description and drawings.
  • the wire bonding apparatus 1 holds the wire so as to slightly protrude from the capillary unit 3. Next, the wire bonding apparatus 1 forms a free air ball (Free Air Ball) at the tip of the protruding wire. Next, the wire bonding apparatus 1 performs ball bonding. Specifically, the free air ball is pressed against the electrode of the semiconductor chip using the capillary unit 3. This action bonds the wire to the electrode.
  • a free air ball Free Air Ball
  • the wire bonding apparatus 1 takes a closed form (first form) as shown in FIG. 1, and the inert gas area SB (second Form an active gas region).
  • the chamber unit 4 blows an inert gas (for example, nitrogen gas) in the area where the free air ball is disposed.
  • an inert gas region SB (see FIGS. 1, 4 and 5) is formed.
  • the chamber unit 4 physically encloses the area to which this inert gas is blown.
  • the inert gas is confined to the enclosed area.
  • the wire bonding apparatus 1 can maintain a good inert gas area SB.
  • the vertical direction D1 is a direction along the vertical direction or an extension direction of the capillary 6 described later.
  • the longitudinal direction D2 is a direction from the wire bonding apparatus 1 toward the worker.
  • the worker side is "front”.
  • the device side is "after”.
  • the left-right direction D3 is a direction orthogonal to each of the vertical direction D1 and the front-rear direction D2.
  • "right” and “left” are for convenience of description. “Right” and “left” correspond to “right” and “left” as viewed from a worker standing in front of the wire bonding apparatus 1.
  • the base unit 2 is a base that supports the capillary unit 3 and the chamber unit 4. While the wire bonding apparatus 1 is in operation, the base unit 2 maintains a predetermined position.
  • the capillary unit 3 and the chamber unit 4 are provided movably with respect to the base unit 2. For example, the capillary unit 3 reciprocates in the vertical direction D1.
  • the capillary unit 3 has a capillary 6 and a capillary arm 7.
  • the capillary 6 bonds the wire to the electrode of the semiconductor chip.
  • the capillary 6 is a cylindrical member extending along the vertical direction D1.
  • the upper end of the capillary 6 is detachably held by the capillary arm 7.
  • the capillary 6 has a through hole extending from the upper end side to the lower end side. An opening is provided at the lower end of the capillary 6.
  • the wire is inserted through the through hole.
  • the capillary 6 switches between the state of holding the wire and the state of releasing the wire according to a configuration not shown.
  • the capillary arm 7 connects the capillary 6 to the base unit 2.
  • the capillary arm 7 is a cantilever extending in the front-rear direction D2.
  • the rear end of the capillary arm 7 is reciprocably coupled to the base unit 2 along the vertical direction D1.
  • the front end of the capillary arm 7 detachably holds the upper end of the capillary 6.
  • the chamber unit 4 has a left chamber unit 4L and a right chamber unit 4R.
  • One of the left chamber unit 4L and the right chamber unit 4R is movable relative to the other.
  • the left chamber unit 4L is fixed to the base unit 2. That is, the left chamber unit 4L does not move at all.
  • the right chamber unit 4R is movable relative to the base unit 2. In other words, the right chamber unit 4R is movable relative to the left chamber unit 4L fixed to the base unit 2.
  • the left chamber unit 4L has a left arm 8L (holding unit), a left gas supply unit 9L (see FIG. 3 and the like), and a left chamber block 11L (second chamber block).
  • the proximal end side of the left arm 8L is fixed to the base unit 2.
  • the left chamber block 11L is fixed to the tip side of the left arm 8L.
  • the right chamber unit 4R has a right arm 8R, a right gas supply unit 9R, and a right chamber block 11R (first chamber block).
  • the left chamber block 11L and the right chamber block 11R constitute a chamber 11 (chamber member). Therefore, the left chamber block 11L and the right chamber block 11R are separate from each other.
  • the left gas supply unit 9L and the right gas supply unit 9R constitute a gas supply unit 9 (inert gas supply path).
  • the proximal end side of the right arm 8R is fixed to the base unit 2.
  • the right chamber block 11R is fixed to the front end side of the right arm 8R.
  • the right arm 8R has a fixed arm 12 and a movable arm 13.
  • the proximal end of the fixed arm 12 is fixed to the base unit 2.
  • the movable arm 13 is connected to the fixed arm 12.
  • the movable arm 13 has an L-shaped shape.
  • the proximal end 13 a of the movable arm 13 is rotatably coupled to the fixed arm 12.
  • the right chamber block 11R is fixed to the tip 13b of the movable arm 13. That is, when the movable arm 13 rotates with respect to the fixed arm 12, the right chamber block 11R moves relative to the left chamber block 11L.
  • the movable arm 13 is coupled to the fixed arm 12 using a bolt 14.
  • the shaft portion 14 a of the bolt 14 is inserted into the insertion hole 13 h of the movable arm 13.
  • the tip of the shaft portion 14 a is screwed into the connection hole 12 a of the fixed arm 12.
  • the diameter of the shaft portion 14a is slightly smaller than the inner diameter of the insertion hole 13h. Accordingly, the movable arm 13 rotates smoothly with respect to the bolt 14.
  • the connection hole 12a, the insertion hole 13h, and the bolt 14 constitute a movable mechanism 15 (movable portion).
  • the right chamber unit 4R may have a latch mechanism 17 as needed.
  • the latch mechanism 17 holds the position of the movable arm 13. Specifically, the position of the right chamber block 11R in the closed mode (first mode, see FIG. 1) is held, and the position of the right chamber block 11R in the open mode (second mode, see FIG. 6) is kept.
  • the latch mechanism 17 has a first suction unit 18 and a second suction unit 19.
  • the first adsorption unit 18 has a first magnet M1 and a second magnet M2.
  • the first suction unit 18 maintains the position of the right chamber block 11R. That is, the first suction unit 18 maintains the position of the movable arm 13 with respect to the fixed arm 12. This maintenance is based on the attraction between the first magnet M1 and the second magnet M2. Therefore, when a force in the opposite direction larger than the suction force is applied to the movable arm 13, the state in which the position of the right chamber block 11R is maintained is released.
  • the second adsorption unit 19 includes a first magnet M1 and a third magnet M3.
  • the second suction unit 19 maintains the position of the right chamber block 11R. That is, the second suction unit 19 maintains the position of the movable arm 13 with respect to the fixed arm 12. This maintenance is based on the attraction between the first magnet M1 and the third magnet M3. Therefore, when a force in the opposite direction larger than the suction force is applied to the movable arm 13, the state in which the position of the right chamber block 11R is maintained is released.
  • the wire bonding apparatus 1 When the wire bonding apparatus 1 is in operation, various components in the wire bonding apparatus 1 are mechanically moved. According to the first suction unit 18, the displacement of the position of the right chamber block 11R can be suppressed by vibration or the like caused by the movement of these components. Therefore, while the wire bonding apparatus 1 is in operation, the inert gas area SB can be suitably maintained.
  • the position of the right chamber block 11R can be held. For example, even if the worker mistakenly touches the movable arm 13, the position of the right chamber block 11R can be maintained.
  • the latch mechanism 17 may further include a first buffer 21 and a second buffer 22.
  • the first buffer portion 21 dampens the force of the movable arm 13 when switching from the open mode to the closed mode. Therefore, collision of the movable arm 13 with the fixed arm 12 can be suppressed. That is, when switching from the open mode to the closed mode, the movable arm 13 is held by the first suction unit 18 after the momentum is reduced by the first buffer unit 21.
  • the second buffer 22 dampens the momentum of the movable arm 13 when switching from the closed mode to the open mode. That is, when the mode is switched from the closed mode to the open mode, the movable arm 13 is held by the second suction unit 19 after the second cushioning section 22 reduces the force.
  • the first buffer unit 21 has a fourth magnet M4 and a fifth magnet M5.
  • the fourth magnet M4 is disposed on the fixed arm 12.
  • the fifth magnet M5 is disposed on the movable arm 13.
  • the fourth magnet M4 and the fifth magnet M5 face each other. That is, the first buffer unit 21 plays its function immediately before the transition to the closed mode is completed.
  • the first buffer unit 21 reduces the force of the movable arm 13 using the repulsive force generated by the fourth magnet M4 and the fifth magnet M5. Therefore, the faces of the same poles of the fourth magnet M4 and the fifth magnet M5 face each other.
  • the second buffer portion 22 has a fourth magnet M4 and a sixth magnet M6.
  • the sixth magnet M6 is disposed on the fixed arm 12. When in the open configuration, the fourth magnet M4 and the sixth magnet M6 face each other. That is, the second buffer unit 22 plays its function immediately before the transition to the open mode is completed. The faces of the same poles of the fourth magnet M4 and the sixth magnet M6 face each other.
  • the left chamber block 11L has a third surrounding surface P3 and a left gas supply hole 9La.
  • the left chamber block 11L is disposed on the left side of the capillary 6.
  • the tip end 11La of the left chamber block 11L is disposed rearward of the front end face 7c of the capillary arm 7. That is, the left chamber block 11L partially surrounds the left side surface 7a of the capillary arm 7.
  • the portion facing the left side surface 7a of the capillary arm 7 is a third surrounding surface P3.
  • the third surrounding surface P3 is a surface orthogonal to the left-right direction D3.
  • the chamber plate 16 (plate member) is attached to the block lower surface 11Lb of the left chamber block 11L.
  • the chamber plate 16 is provided with a passage hole 16 a through which the capillary 6 is inserted.
  • the chamber plate 16 extends from the third surrounding surface P3 toward the right chamber block 11R described later.
  • the chamber plate 16 is disposed further below the bottom surface 7 d of the capillary arm 7 when the capillary arm 7 is positioned at the lowermost position.
  • the chamber plate 16 covers the bottom surface 7 d of the capillary arm 7.
  • the left gas supply hole 9La has a discharge opening formed in the third surrounding surface P3.
  • the left gas supply hole 9La discharges the inert gas supplied from the left gas supply pipe 9Lb from the discharge opening.
  • the axis A2 of the discharge opening of the left gas supply hole 9La intersects with the axis A1 of the capillary 6.
  • the right chamber block 11R has a first surrounding surface P1, a second surrounding surface P2, a first right gas supply hole 9Ra, and a second right gas supply hole 9Rc.
  • the right chamber block 11R is disposed on the right side of the capillary 6.
  • the right chamber block 11R surrounds the capillary arm 7 from the right side surface 7b of the capillary arm 7 to the front end surface 7c.
  • the portion facing the right side surface 7b of the capillary arm 7 is a first surrounding surface P1.
  • a portion facing the front end surface 7c of the capillary arm 7 is a second surrounding surface P2.
  • the first surrounding surface P1 faces the third surrounding surface P3.
  • the first surrounding surface P1 is a surface orthogonal to the left-right direction D3.
  • the second surrounding surface P2 is a surface intersecting with the front-rear direction D2.
  • the second surrounding surface P2 includes a right surrounding surface P2a and a left surrounding surface P2b.
  • the right surrounding surface P2a is continuous with the first surrounding surface P1.
  • the left surrounding surface P2b is continuous with the right surrounding surface P2a.
  • the angle between the right surrounding surface P2a and the left surrounding surface P2b is about 90 degrees.
  • the boundary between the right surrounding surface P2a and the left surrounding surface P2b may pass through the axis A1 and intersect with an axis parallel to the front-rear direction D2.
  • the right surrounding surface P2a faces the right side of the front end surface 7c of the capillary arm 7.
  • the left surrounding surface P2b faces the left side of the front end surface 7c of the capillary arm 7.
  • a gap is provided between the tip of the left surrounding surface P2b and the tip 11La of the left chamber block 11L.
  • the gas pipe 9Rb is connected to the first right gas supply hole 9Ra.
  • the first right gas supply hole 9Ra has a discharge opening formed in the second surrounding surface P2.
  • the discharge opening discharges the inert gas toward the capillary 6.
  • the axis A3 of the discharge opening of the first right gas supply hole 9Ra passes through the axis A1.
  • the gas pipe 9Rd is connected to the second right gas supply hole 9Rc.
  • the second right gas supply hole 9Rc has an exhaust opening formed on the lower surface of the right chamber block 11R.
  • the discharge opening discharges the inert gas.
  • the wire bonding apparatus 1 can switch between a closed mode (see FIG. 1) and an open mode (see FIGS. 6 and 7).
  • the wire bonding apparatus 1 is in a closed form when performing wire bonding.
  • the wire bonding apparatus 1 is in an open form.
  • This operation includes inspection work and maintenance work.
  • an operation of replacing the capillary 6 may be mentioned as an example of the operation.
  • the switching operation may be performed, for example, by the worker manually moving the movable arm 13.
  • the position of the right chamber block 11R is different between the closed mode and the open mode.
  • the positions of the left chamber block 11L are the same as each other.
  • the position of the capillary 6 does not matter in the closed mode and the open mode.
  • the closed mode is a mode for forming the inert gas region SB.
  • the inactive gas region SB is a region that suppresses the oxidation of the free air ball, as described in terms of its function.
  • the inert gas region SB is a region surrounded by at least the left chamber block 11L and the right chamber block 11R, as described from the structure thereof.
  • the inert gas region SB is a space surrounded by the third surrounding surface P3, the chamber plate 16, the first surrounding surface P1, the right surrounding surface P2a, and the left surrounding surface P2b. That is, the inert gas area SB is an area in which five surfaces are enclosed.
  • the position of the right chamber block 11R for surrounding the periphery of the capillary 6 in this manner is called a first position. Therefore, when the right chamber block 11R is in the first position, a part of the right chamber block 11R (a part of the first surrounding surface P1 and the second surrounding surface P2) is disposed on the front side of the capillary 6.
  • the capillary arm 7 is disposed above the free air ball (see FIG. 4). Therefore, the inert gas area SB is an area where six surfaces are surrounded by adding the bottom surface 7 d of the capillary arm 7.
  • the inert gas is contained in the third surrounding surface P3, the chamber plate 16, the first surrounding surface P1, the right surrounding surface P2a, the left surrounding surface P2b, and the bottom surface of the capillary arm 7. It can be confined in the space surrounded by 7d. Therefore, it is possible to keep the inert gas in the inert gas region SB. As a result, oxidation of the free air ball can be suitably suppressed.
  • the open mode is a mode for forming the work space S2, as described from the function thereof.
  • an area that is, a work space S2
  • the open configuration is a configuration in which the right chamber block 11R is separated from the capillary arm 7, as described from the structure thereof. This spaced position is the second position of the right chamber block 11R.
  • the right chamber block 11R in each axial direction will be described.
  • the right chamber block 11R is disposed above the tip of the capillary arm 7 and the capillary 6.
  • the right chamber block 11R is disposed behind the tip of the capillary arm 7 and the capillary 6. This position is between the tip of capillary arm 7 and capillary 6 and base unit 2.
  • the right chamber block 11R is separated to the right from the tip of the capillary arm 7 and the capillary 6.
  • the right chamber block 11R moves obliquely backward right with respect to the tip of the capillary arm 7.
  • the configuration in which the right chamber block 11R is separated from the capillary arm 7 is realized by the movable mechanism 15.
  • the axis AR of the bolt 14 of the movable mechanism 15 is orthogonal to the front-rear direction D2. Further, the axis AR is inclined with respect to each of the vertical direction D1 and the horizontal direction D3. For example, the axis AR of the bolt 14 is inclined 45 degrees with respect to the left-right direction D3.
  • the axis AR is disposed between the capillary 6 and the base unit 2.
  • the right side surface 7b and the front end surface 7c of the capillary arm 7 can be opened. That is, the operator can visually observe the front end surface 7c side of the capillary arm 7 from the front. Further, the operator can access from the side of the right side surface 7 b of the capillary arm 7 and perform the replacement work of the capillary 6 or the like.
  • the right chamber block 11R is located above the front end surface 7c of the capillary arm 7. As a result, the operator can access the right side surface 7 b of the capillary arm 7 from right to left. Therefore, the workability can be further improved.
  • the wire bonding apparatus 1 includes a shutter unit 30 and a feeder unit 40.
  • the shutter unit 30 is disposed on the feeder unit 40. Then, the shutter unit 30 guides the inert gas discharged from the feeder unit 40 to the lower side of the capillary 6.
  • the shutter unit 30 cooperates with the chamber unit 4 to form an inert gas area forming unit 20.
  • the feeder unit 40 sequentially transports the semiconductor chip unit 100 (described later) to which the wire is not connected below the capillary 6. Further, the feeder unit 40 carries out the semiconductor chip unit 100 to which the wire is connected from below the capillary 6. Furthermore, the feeder unit 40 forms a closed space. An inert gas is supplied to this enclosed space.
  • an inert gas region is formed inside the feeder unit 40.
  • the inert gas region includes where the free air ball is connected to the electrode. Therefore, it is possible to suppress the oxidation of free air balls and the oxidation of electrodes during wire connection. That is, the wire bonding apparatus 1 forms an inert gas region.
  • the inert gas region includes from the position where the capillary 6 forms the free air ball to the position where the capillary 6 connects the free air ball to the electrode.
  • the feeder unit 40 includes a housing 41, a gas supply unit 42, a bonding stage 43, and a window clamper 44.
  • the housing 41 has a hollow box shape.
  • the housing 41 transports the semiconductor chip unit 100 in the left-right direction D3 by a transport mechanism (not shown).
  • the housing 41 extends along the left-right direction D3.
  • the housing 41 has a housing upper plate 41a, a housing lower plate 41b, and an opening 41h.
  • the housing upper plate 41 a faces the shutter unit 30.
  • the opening 41 h is formed in the housing upper plate 41 a.
  • the opening 41 h has a rectangular shape in plan view.
  • the gas supply unit 42 is disposed inside the housing 41.
  • the gas supply unit 42 supplies an inert gas to the periphery of the semiconductor chip unit 100.
  • the gas supply unit 42 has a main surface 42a, a back surface 42b, a gas receiving pipe 42c, and a gas supply hole 42h.
  • the gas supply unit 42 has a box shape.
  • the gas supply unit 42 is connected to an external gas source using a gas receiving pipe 42c.
  • the main surface 42a faces the housing upper plate 41a.
  • the back surface 42b faces the housing lower plate 41b.
  • the gas supply holes 42 h are provided in the main surface 42 a.
  • the bonding stage 43 supports the semiconductor chip unit 100. In addition, the bonding stage 43 distributes the inert gas supplied from the gas supply unit 42 around the semiconductor chip unit 100.
  • Bonding stage 43 has main surface 43a, back surface 43b, distribution region 43s, and opening 43h (second opening).
  • the main surface 43a faces the housing upper plate 41a.
  • the semiconductor chip unit 100 is mounted on the main surface 43a.
  • the back surface 43 b faces the main surface 42 a of the gas supply unit 42.
  • the distribution area 43s is provided on the back surface 43b.
  • the distribution area 43s is an area recessed from the back surface 43b in the thickness direction.
  • the opening 43 h is a thin hole penetrating from the distribution area 43 s to the main surface 43 a.
  • Bonding stage 43 has a plurality of openings 43 h.
  • the semiconductor chip unit 100 is mounted on the main surface 43 a of the bonding stage 43.
  • the semiconductor chip unit 100 has a substrate 101 and a plurality of semiconductor chips (not shown).
  • the substrate 101 has a main surface 101 a and a back surface 101 b.
  • the main surface 101 a contacts the wind clamper 44.
  • a plurality of wire connection areas 101c are set on the main surface 101a.
  • the wire connection area 101 c includes a conductive connection portion to which a wire is connected using the capillary 6 and an opening 101 h (first opening).
  • the openings 101 h are formed regularly or irregularly. Some openings 101h communicate with the openings 43h.
  • the back surface 101 b is in contact with the bonding stage 43.
  • the wind clamper 44 is attached to the housing 41. Specifically, the window clamper 44 is attached to the housing upper plate 41a. As a result, the wind clamper 44 closes the opening 41 h of the housing 41.
  • the window clamper 44 presses the film-like semiconductor chip unit 100 against the bonding stage 43. As a result, the position of the semiconductor chip unit 100 is held. That is, the semiconductor chip unit 100 is held by the window clamper 44 and the bonding stage 43.
  • the window clamper 44 has a main surface 44a, a back surface 44b, a clamp portion 44c, and an opening 44h (third opening).
  • the main surface 44 a faces the shutter unit 30.
  • the back surface 44 b faces the housing upper plate 41 a, the bonding stage 43 and the semiconductor chip unit 100.
  • the clamp portion 44c is provided on the back surface 44b. Further, the clamp portion 44 c protrudes toward the semiconductor chip unit 100.
  • the clamp unit 44 c contacts the semiconductor chip unit 100.
  • the clamp portion 44 c is formed on the semiconductor chip unit 100.
  • the openings 44h of the wind clamper 44 are provided in two rows along the left-right direction D3.
  • a plurality of openings 44 h are provided in the front-rear direction D2.
  • the opening 44 h is a through hole penetrating from the main surface 44 a to the contact surface of the clamp portion 44 c.
  • the openings 44 h communicate with any of the openings 101 h provided in the semiconductor chip unit 100.
  • the opening 44 h is provided corresponding to the wire connection area 101 c.
  • the opening 44 h guides the tip of the capillary 6 to the semiconductor chip unit 100.
  • the opening 44 h exposes the wire connection area 101 c.
  • the wire connection area 101 c includes a conductive connection portion such as an electrode pad of the semiconductor chip unit 100 to which bonding is performed.
  • One opening 44 h may expose one wire connection area 101 c.
  • one opening 44 h may expose a plurality of wire connection areas 101 c.
  • the shutter unit 30 is disposed on the feeder unit 40.
  • the shutter unit 30 has a shutter plate 31 (shutter), a right connecting portion 32R, and a left connecting portion 32L.
  • the shutter plate 31 covers a part of the housing upper plate 41a.
  • the right connecting portion 32R and the left connecting portion 32L connect the shutter plate 31 to the bonding tool 10.
  • the bonding tool 10 moves along the horizontal surface (the plane formed by the front-rear direction D2 and the left-right direction D3)
  • the shutter unit 30 also moves in the horizontal direction as the bonding tool 10 moves. . That is, the shutter unit 30 moves relative to the window clamper 44 and the substrate 101 together with the capillary 6 when the capillary 6 connects a wire to the wire connection area 101 c.
  • the shutter plate 31 is disposed on the window clamper 44 of the feeder unit 40.
  • the shutter plate 31 covers the wind clamper 44. More specifically, the shutter plate 31 is disposed on the opening 44 h of the window clamper 44.
  • the shutter plate 31 has a main surface 31a, a back surface 31b, an opening 31h (fourth opening), and a block facing portion 31c (first facing portion) (see FIG. 10). A slight gap is formed between the back surface 31 b of the shutter plate 31 and the main surface 44 a of the window clamper 44.
  • the opening 31h includes a capillary introducing hole 32a and a block introducing hole 32b.
  • the capillary introduction hole 32a is provided at a position intersecting the movement trajectory (vertical direction D1) of the capillary 6.
  • the opening 31 h exposes a part of the wind clamper 44.
  • a portion of the wind clamper 44 includes an opening 44 h. Accordingly, the tip of the capillary 6 can reach the semiconductor chip unit 100 through the capillary introduction hole 32a and the opening 44h.
  • the block introduction hole 32b accommodates a part of the left chamber block 11L. As shown in FIG. 11, specifically, the block introduction hole 32b accommodates the lower portion of the left chamber block 11L, the chamber plate 16, and the chamber flange 11s.
  • the plate lower surface 16 c of the chamber plate 16 may be disposed between the main surface 31 a and the back surface 31 b of the shutter plate 31. Also, the plate lower surface 16c may be disposed flush with the back surface 31b.
  • the block facing portion 31c is formed in the vicinity of the opening 31h.
  • the block facing portion 31c faces the block lower surface 11Rb of the right chamber block 11R.
  • the right chamber block 11R is disposed at a position where a slight gap is formed between the right chamber block 11R and the main surface 31a. Therefore, the right chamber block 11R does not enter the shutter plate 31 like the left chamber block 11L.
  • the right connecting portion 32R is fixed to the main surface 31a.
  • the right connecting portion 32R is connected to the right arm 8R via an angle member.
  • the left connecting portion 32L is fixed to the main surface 31a.
  • the left connecting portion 32L is separated from the right connecting portion 32R in the left direction.
  • the left connecting portion 32L is connected to the left arm 8L. That is, the shutter unit 30 is connected to the bonding tool 10 via the right arm 8R and the left arm 8L.
  • the inert gas supplied from the opening 43 h of the bonding stage 43 is sprayed to the substrate 101.
  • the inert gas sprayed onto the substrate 101 passes through the openings 101 h and 44 h, and then the flow is narrowed at the opening 31 h in the shutter plate 31. That is, the inert gas is led to the tip of the capillary 6 which the bonding tool 10 has by the opening 31 h.
  • the inert gas areas SA and SB can be suitably formed around the free air ball at the tip of the capillary 6, the ability to suppress the oxidation of the free air ball is improved. As a result, the wire bonding apparatus 1 can ensure good bonding quality.
  • FIG. 13 shows a cross section of the feeder unit 40 along a plane orthogonal to the left-right direction D3 in the wire bonding apparatus 200 according to the comparative example. Arrow lines indicate the movement of the inert gas.
  • the inert gas is discharged upward from the gas supply holes 42h. As a result, the inert gas moves to the distribution area 43s. Next, the inert gas is exhausted from the distribution area 43s through the plurality of openings 43h. The discharged inert gas is further discharged upward through the opening 101 h of the substrate 101 and the opening 44 h of the wind clamper 44.
  • an opening 44h formed below the right chamber block 11R and the left chamber block 11L is covered. However, all the other openings 44h are open. Then, the inert gas is discharged to the atmosphere from the opened opening 44h. The discharged inert gas is not reused.
  • the shutter unit 30 is disposed above the opening 44h with a gap therebetween. Then, the inert gas discharged from the opening 44h moves in the front-rear direction D2 through the gap between the back surface 31b and the main surface 44a. Then, when the inert gas reaches the opening 31 h, it moves upward again. An inert gas region SB surrounded by the right chamber block 11R and the left chamber block 11L is formed above the opening 31h. That is, the inert gas discharged from the feeder unit 40 is led to the inert gas region SB by the shutter unit 30.
  • the inert gas in the feeder unit 40 is used in two modes.
  • the inert gas is used to form an inert gas area SA (first inert gas area) around the semiconductor chip unit 100.
  • an inert gas is used to form an inert gas area SB around the free air ball.
  • An inert gas is supplied to the inert gas area SB from the first right gas supply hole 9Ra, the second right gas supply hole 9Rc, and the left gas supply hole 9La. Therefore, the inert gas is supplied from two places to the inert gas region SB. As a result, it is possible to form an inactive region capable of sufficiently suppressing the oxidation of the free air ball.
  • the above-described induction of the inert gas also occurs in the left-right direction D3.
  • an inert gas is introduced from a gas receiving pipe 42c. Then, the inert gas is discharged upward from the gas supply hole 42 h. Next, the inert gas is discharged further upward through the plurality of openings 43 h, the opening 101 h and the opening 44 h of the wind clamper 44.
  • a plurality of openings 44 h are provided along the left-right direction D3.
  • the shutter unit 30 is disposed so as to close the other opening 44h except the opening 44h for exposing the wire connection area 101c to be operated. According to such a configuration, the inert gas is retained in the opening 44 h.
  • an inert gas area SA is formed. Then, the inert gas moves in the left-right direction D3 via the gap between the back surface 31b and the main surface 44a. Next, after reaching the opening 31 h, the inert gas moves upward again and is led to the inert gas region SB.
  • the wire bonding apparatus 1 can effectively use the inert gas provided to the feeder unit 40. Then, in forming the inert gas region SB for the free air ball, the wire bonding apparatus 1 further adds to the inert gas supplied from the gas supply unit 42 of the right chamber block 11R and the left chamber block 11L, , An inert gas derived from the feeder unit 40 is used. Therefore, the wire bonding apparatus 1 can improve the ability to form a gas atmosphere. As a result, the wire bonding apparatus 1 can form an inert gas region SB having a desired oxygen concentration. The wire bonding apparatus 1 can form a free air ball of good quality. Therefore, the wire bonding apparatus 1 can ensure good bonding quality.
  • the shutter plate 31 moves relative to the window clamper 44 and the substrate 101 together with the capillary 6 when the capillary 6 connects a wire to the wire connection area 101 c.
  • the inert gas area SA can be formed using the inert gas discharged from the feeder unit 40 without providing a complicated mechanism.
  • the bonding tool 10 includes a chamber plate 16 having a passage hole 16a through which the tip of the capillary 6 passes, a chamber unit 4 surrounding the capillary 6, a second inert gas in a region surrounded by the chamber plate 16 and the chamber unit 4 And supplying an inert gas supply path.
  • the inert gas area SB can be further formed. Therefore, the wire bonding apparatus 1 can more preferably suppress the oxidation of the free air ball.
  • the inert gas that has passed through the opening 44 h forms an inert gas area SA.
  • the inert gas area SA is a space in which the tip of the capillary 6 which has passed through the passage hole 16a downward is disposed.
  • the inert gas supply path is constituted by the first right gas supply hole 9Ra, the second right gas supply hole 9Rc, and the left gas supply hole 9La.
  • the inert gas supplied from the inert gas supply path forms an inert gas region SB.
  • the inert gas region SB is a space in which the tip of the capillary 6 located above the passage hole 16a is disposed.
  • the inert gas regions SA and SB are focused on with reference to FIG.
  • the inert gas area SA suppresses oxidation of the free air ball and the conductive connection when bonding the free air ball to the substrate 101 in the wire connection area 101c.
  • the inert gas area SB suppresses the oxidation of the free air ball formed at the tip of the capillary 6.
  • the inert gas area SA is formed below the inert gas area SB along the vertical direction D1.
  • the thresholds of the inert gas area SA and the inert gas area SB may be, for example, the chamber plate 16. That is, the inactive area formed below the chamber plate 16 is the inert gas area SA.
  • the inactive area formed above the chamber plate 16 is an inert gas area SB.
  • the chamber unit 4 includes a right chamber block 11R, a left chamber block 11L separate from the right chamber block 11R, and a movable mechanism 15 for moving the right chamber block 11R relative to the capillary 6.
  • the movable mechanism 15 has a first form in which the periphery of the capillary 6 is surrounded by the right chamber block 11R and the right chamber block 11R, and a second form in which a part of the periphery of the capillary 6 is opened by moving the right chamber block 11R. , Switch between each other.
  • the movable mechanism 15 switches from the open mode to the closed mode by moving the left chamber block 11L.
  • the closed mode the capillary 6 is surrounded by the left chamber block 11L and the right chamber block 11R. Accordingly, the inert gas can be retained around the capillary 6. As a result, oxidation of free air balls can be suppressed.
  • the movable mechanism 15 moves the left chamber block 11L in the opposite direction.
  • the closed mode is switched to the open mode.
  • the open mode a part of the periphery of the capillary 6 is open. Therefore, the wire bonding apparatus 1 can secure the work space S2. Therefore, the wire bonding apparatus 1 can improve the workability of wire bonding. As a result, the wire bonding apparatus 1 can ensure both good bonding quality and improvement in workability.
  • the wire bonding apparatus 1 includes a movable mechanism 15 that moves the right chamber block 11R.
  • the shutter unit 30 includes a block facing portion 31c facing the block lower surface 11Lb of the right chamber block 11R. According to this configuration, the block facing portion 31c covers the opening 44h. That is, the area of the shutter plate 31 covering the opening 44 h is increased. Therefore, the wire bonding apparatus 1 can efficiently guide the inert gas discharged from the feeder unit 40 to the inert gas area SB.
  • the chamber unit 4 of the wire bonding apparatus 1 further includes a left arm 8L that holds the relative position of the left chamber block 11L to the capillary 6.
  • the shutter unit 30 further includes an opening 31 h for receiving the lower surface 11 Lb of the left chamber block 11 L and the chamber plate 16. According to this configuration, the opening 31 h becomes large. As a result, the shutter plate 31 can be reduced in weight. And, according to the shutter plate 31 which is reduced in weight, the inertial force caused by the mass is reduced. Therefore, the high speed operation of the bonding tool 10 is not impeded. Further, the opening 44h not covered by the shutter plate 31 is covered by the left chamber block 11L or the like received in the opening 31h. That is, the left chamber block 11L can substitute the function of the shutter plate 31. Therefore, the wire bonding apparatus 1 can efficiently guide the inert gas discharged from the feeder unit 40 to the inert gas area SB.
  • the wire bonding apparatus according to the present disclosure has been described in detail based on the embodiment.
  • the wire bonding apparatus according to the present disclosure is not limited to the above embodiment.
  • the wire bonding apparatus according to the present disclosure can be variously modified without departing from the scope of the invention.
  • the left chamber block 11L is fixed, and the right chamber block 11R is moved.
  • the left chamber block 11L may be operated by the second movable portion (second mechanism).
  • the shutter unit 30 further includes a block facing portion 31d (second facing portion) facing the block lower surface 11Lb of the left chamber block 11L. That is, the opening 31 h is further reduced. As a result, the inert gas discharged from the feeder unit 40 can be more efficiently guided to the inert gas region SB.
  • the gas supply part 9 was provided in both the left chamber block 11L and the right chamber block 11R.
  • the gas supply unit 9 may be provided only in one of the left chamber block 11L and the right chamber block 11R.
  • the second position of the right chamber block 11 ⁇ / b> R is obliquely above the right with respect to the capillary 6 and further rearward.
  • the second position of the right chamber block 11R is not limited to this arrangement as long as the capillary 6 and a part of the tip of the capillary arm 7 can be opened.

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  • Wire Bonding (AREA)

Abstract

A wire bonding device 1 is provided with: a bonding stage 43 which supports a substrate 101 including an opening 101h in a wire connection region 101c, and which includes an opening 43h for spraying inert gas onto the substrate 101; a window clamper 44 which includes a plurality of openings 44h opened in correspondence to the wire connection region 101c of the substrate 101, and which fixes the substrate 101 onto the bonding stage 43; a bonding tool 10 which includes a capillary 6 for press-attaching a wire to the wire connection region 101c; and a shutter plate 31 which is disposed above the window clamper 44 and includes an opening 31h through which the capillary 6 is passed, the opening 31h narrowing the flow passageway of the inert gas that has passed through the openings 101h, 43h, 44h and guiding the inert gas to a distal end of the capillary 6.

Description

ワイヤボンディング装置Wire bonding equipment
　本開示は、ワイヤボンディング装置に関する。 The present disclosure relates to a wire bonding apparatus.
　半導体チップの電極にワイヤを接合するとき、ボールボンディングが行われる。ボールボンディングでは、キャピラリ先端から突出させたワイヤの先端を溶融させる。その結果、ワイヤの先端にフリーエアボールが形成される。そして、フリーエアボールを電極に押圧する。フリーエアボールは、溶融金属であるので酸化しやすい。フリーエアボールの酸化は、ワイヤと電極との接続不良の原因になる。 When bonding a wire to an electrode of a semiconductor chip, ball bonding is performed. In ball bonding, the tip of the wire protruding from the tip of the capillary is melted. As a result, a free air ball is formed at the tip of the wire. Then, the free air ball is pressed against the electrode. Free air balls are easily oxidized because they are molten metal. Oxidation of the free air ball causes poor connection between the wire and the electrode.
特開２００７－２９４９７５号公報JP 2007-294975 A 米国特許出願公開第２００７／０２５１９８０号明細書U.S. Patent Application Publication No. 2007/0251980 特開平５－２３５０８０号公報Unexamined-Japanese-Patent No. 5-235080
　特許文献１～３は、フリーエアボールの酸化を抑制する技術を開示する。これらの技術は、フリーエアボールが形成される領域へ不活性ガスを提供する。特許文献１，２に開示された技術は、キャピラリの先端の近傍にガス供給管の排出口を配置する。そして、当該排出口からボールに向けてカバーガスを提供する。特許文献３に開示された技術は、密閉型フィーダに供給される窒素ガス等の酸化抑制ガスをキャピラリツールに向けて噴出させる。 Patent documents 1 to 3 disclose techniques for suppressing the oxidation of free air balls. These techniques provide an inert gas to the area where free air balls are formed. The techniques disclosed in Patent Documents 1 and 2 place the exhaust port of the gas supply pipe near the tip of the capillary. Then, a cover gas is provided from the outlet toward the ball. According to the technology disclosed in Patent Document 3, an oxidation suppression gas such as nitrogen gas supplied to a closed feeder is jetted toward a capillary tool.
　当該技術分野においては、不活性ガスを利用するフリーエアボールの酸化抑制技術（特許文献１～３）が知られている。しかし、当該技術分野においては、酸化抑制能力の更なる向上が望まれている。 In the related art, techniques for suppressing free air ball oxidation using an inert gas (Patent Documents 1 to 3) are known. However, in the art, further improvement in the ability to suppress oxidation is desired.
　そこで本開示は、フリーエアボールの酸化を抑制する能力を向上させ、ひいては良好なボンディング品質を確保できるワイヤボンディング装置を説明する。 Thus, the present disclosure describes a wire bonding apparatus that can improve the ability to inhibit the oxidation of free air balls and thus ensure good bonding quality.
　本開示の一形態であるワイヤボンディング装置は、ワイヤ接続領域に第１開口部を有する基板を支持し、基板に第１不活性ガスを吹き付ける第２開口部を有するボンディングステージと、基板のワイヤ接続領域に対応して開口する複数の第３開口部を有し、基板をボンディングステージに固定するウインドクランパと、ワイヤ接続領域にワイヤを圧着するキャピラリを有する上部ボンディング機構と、ウインドクランパの上方に配置され、キャピラリが通過すると共に、第１開口部、第２開口部及び第３開口部を通過した第１不活性ガスの流路を絞りキャピラリの先端に第１不活性ガスを導出する第４開口部を有するシャッタと、を備える。 A wire bonding apparatus according to an embodiment of the present disclosure supports a substrate having a first opening in a wire connection region, and has a bonding stage having a second opening for spraying a first inert gas onto the substrate, and wire connection of the substrate. A window clamper having a plurality of third openings that open corresponding to the area, a window clamper for fixing the substrate to the bonding stage, an upper bonding mechanism having a capillary for crimping a wire to the wire connection area, and And the passage of the first inert gas passing through the first opening, the second opening and the third opening as the capillary passes, and the fourth opening for leading the first inert gas to the tip of the capillary And a shutter having a part.
　ボンディングステージの第２開口部から供給された第１不活性ガスは、基板に吹き付けられる。この構成によれば、基板の周囲に不活性ガス領域を形成することが可能である。そして、基板に吹き付けられた第１不活性ガスは、第１開口部、第３開口部を通過した後に、シャッタにおける第４開口部において、その流れが絞られる。すなわち、第１不活性ガスは、第４開口部によって上部ボンディング機構が有するキャピラリの先端に導出される。この構成によれば、キャピラリの先端に不活性ガス領域を形成することが可能である。従って、キャピラリの先端におけるフリーエアボールの周囲に、不活性ガス領域を好適に形成できる。その結果、フリーエアボールの酸化を抑制する能力が向上する。従って、ワイヤボンディング装置は、良好なボンディング品質を確保することができる。 The first inert gas supplied from the second opening of the bonding stage is sprayed to the substrate. According to this configuration, it is possible to form an inert gas region around the substrate. Then, after passing through the first opening and the third opening, the flow of the first inert gas blown to the substrate is narrowed at the fourth opening of the shutter. That is, the first inert gas is led to the tip of the capillary of the upper bonding mechanism by the fourth opening. According to this configuration, it is possible to form an inert gas region at the tip of the capillary. Therefore, an inert gas region can be suitably formed around the free air ball at the tip of the capillary. As a result, the ability to suppress the oxidation of the free air ball is improved. Therefore, the wire bonding apparatus can ensure good bonding quality.
　本開示に係るワイヤボンディング装置によれば、フリーエアボールの酸化を抑制する能力を向上させ、ひいては良好なボンディング品質を確保できる。 According to the wire bonding apparatus according to the present disclosure, the ability to suppress the oxidation of free air balls can be improved, and as a result, good bonding quality can be ensured.
図１は、本実施形態に係るワイヤボンディング装置の第１形態を示す斜視図である。FIG. 1 is a perspective view showing a first embodiment of a wire bonding apparatus according to the present embodiment. 図２は、可動アームを分解して示す斜視図である。FIG. 2 is an exploded perspective view of the movable arm. 図３は、左チャンバブロック及び右チャンバブロックを示す平面図である。FIG. 3 is a plan view showing the left chamber block and the right chamber block. 図４は、左チャンバブロック及び右チャンバブロックを示す正面図である。FIG. 4 is a front view showing the left chamber block and the right chamber block. 図５は、不活性ガス領域を示す斜視図である。FIG. 5 is a perspective view showing an inert gas region. 図６は、ワイヤボンディング装置の第２形態を示す斜視図である。FIG. 6 is a perspective view showing a second embodiment of the wire bonding apparatus. 図７は、ワイヤボンディング装置の第２形態を示す側面図である。FIG. 7 is a side view showing a second embodiment of the wire bonding apparatus. 図８は、フィーダユニットの構成を拡大して示す断面斜視図である。FIG. 8 is an enlarged cross-sectional perspective view of the feeder unit. 図９は、不活性ガスの流れを示すフィーダユニット及びシャッタユニットの断面図である。FIG. 9 is a cross-sectional view of a feeder unit and a shutter unit showing the flow of inert gas. 図１０は、シャッタユニットのシャッタ開口の近傍を拡大して示す斜視図である。FIG. 10 is an enlarged perspective view showing the vicinity of the shutter opening of the shutter unit. 図１１は、シャッタ板の断面を示す図である。FIG. 11 is a view showing a cross section of the shutter plate. 図１２は、不活性ガスの流れを示すフィーダユニット及びシャッタユニットの別の断面図である。FIG. 12 is another cross-sectional view of the feeder unit and the shutter unit showing the flow of inert gas. 図１３は、不活性ガスの流れを示す比較例に係るフィーダユニット及びシャッタユニットの断面図である。FIG. 13 is a cross-sectional view of a feeder unit and a shutter unit according to a comparative example showing a flow of inert gas.
　以下、添付図面を参照しながら本開示のワイヤボンディング装置を実施するための形態を詳細に説明する。図面の説明において同一の要素には同一の符号を付し、重複する説明を省略する。 Hereinafter, an embodiment for implementing the wire bonding apparatus of the present disclosure will be described in detail with reference to the attached drawings. In the description of the drawings, the same elements will be denoted by the same reference symbols, without redundant description.
　図１に示すワイヤボンディング装置１は、半導体チップの電極又は基板の電極にワイヤを圧着する。ワイヤボンディング装置１は、ベースユニット２（基体部）と、キャピラリユニット３（キャピラリ部）と、チャンバユニット４（チャンバ部材）とを有する。ベースユニット２、キャピラリユニット３およびチャンバユニット４は、ボンディングツール１０（上部ボンディング機構）を構成する。なお、ワイヤボンディング装置１は、筐体及び制御装置といったその他の構成要素を有する。しかし、以下の説明及び図面においてはそれらを省略する。 The wire bonding apparatus 1 shown in FIG. 1 crimps a wire to an electrode of a semiconductor chip or an electrode of a substrate. The wire bonding apparatus 1 has a base unit 2 (base portion), a capillary unit 3 (capillary portion), and a chamber unit 4 (chamber member). The base unit 2, the capillary unit 3 and the chamber unit 4 constitute a bonding tool 10 (upper bonding mechanism). The wire bonding apparatus 1 has other components such as a housing and a control device. However, they are omitted in the following description and drawings.
　ワイヤボンディング装置１は、キャピラリユニット３から僅かに突出するようにワイヤを保持する。次に、ワイヤボンディング装置１は、突出させたワイヤの先端にフリーエアボール（Free Air Ball）を形成する。次に、ワイヤボンディング装置１は、ボールボンドを行う。具体的には、キャピラリユニット３を利用してフリーエアボールを半導体チップの電極に押し当てる。この動作により、ワイヤが電極に接合される。 The wire bonding apparatus 1 holds the wire so as to slightly protrude from the capillary unit 3. Next, the wire bonding apparatus 1 forms a free air ball (Free Air Ball) at the tip of the protruding wire. Next, the wire bonding apparatus 1 performs ball bonding. Specifically, the free air ball is pressed against the electrode of the semiconductor chip using the capillary unit 3. This action bonds the wire to the electrode.
　ボールボンドを行うとき、上述したように、ワイヤの先端にフリーエアボールを形成する。フリーエアボールは、例えば溶融した銅である。従ってフリーエアボールは、酸化しやすい。そこで、ワイヤボンディング装置１は、図１に示されるような閉鎖形態（第１形態）をとり、チャンバユニット４によって、フリーエアボールの酸化を抑制する領域としての不活性ガス領域ＳＢ（第２不活性ガス領域）を形成する。チャンバユニット４は、フリーエアボールが配置される領域に不活性ガス（例えば、窒素ガス）を吹付ける。その結果、不活性ガス領域ＳＢ（図１、図４及び図５参照）が形成される。さらに、チャンバユニット４は、この不活性ガスが吹付けられる領域を物理的に囲う。従って、不活性ガスは囲われた領域に留められる。その結果、ワイヤボンディング装置１は、良好な不活性ガス領域ＳＢを維持することができる。 When performing ball bonding, as described above, free air balls are formed at the tip of the wire. The free air ball is, for example, molten copper. Therefore, free air balls are easily oxidized. Therefore, the wire bonding apparatus 1 takes a closed form (first form) as shown in FIG. 1, and the inert gas area SB (second Form an active gas region). The chamber unit 4 blows an inert gas (for example, nitrogen gas) in the area where the free air ball is disposed. As a result, an inert gas region SB (see FIGS. 1, 4 and 5) is formed. Furthermore, the chamber unit 4 physically encloses the area to which this inert gas is blown. Thus, the inert gas is confined to the enclosed area. As a result, the wire bonding apparatus 1 can maintain a good inert gas area SB.
　以下、ワイヤボンディング装置１の具体的な構成について説明する。ワイヤボンディング装置１の説明では、説明の便宜上、上下方向Ｄ１、前後方向Ｄ２及び左右方向Ｄ３を用いる。これらの方向は、ワイヤボンディング装置１を操作する作業者から見た相対的な方向である。例えば、上下方向Ｄ１は、鉛直方向に沿う方向又は後述するキャピラリ６の延在方向である。前後方向Ｄ２は、ワイヤボンディング装置１から作業者に向かう方向である。そして、作業者側は「前」である。装置側は「後」である。左右方向Ｄ３は、上下方向Ｄ１及び前後方向Ｄ２のそれぞれに直交する方向である。また、「右」及び「左」とは、説明の便宜上のものである。「右」及び「左」は、ワイヤボンディング装置１の正面に立つ作業者から見たときの「右」及び「左」に一致する。 The specific configuration of the wire bonding apparatus 1 will be described below. In the description of the wire bonding apparatus 1, for convenience of explanation, the vertical direction D1, the longitudinal direction D2, and the lateral direction D3 are used. These directions are relative directions seen from the operator who operates the wire bonding apparatus 1. For example, the vertical direction D1 is a direction along the vertical direction or an extension direction of the capillary 6 described later. The longitudinal direction D2 is a direction from the wire bonding apparatus 1 toward the worker. And the worker side is "front". The device side is "after". The left-right direction D3 is a direction orthogonal to each of the vertical direction D1 and the front-rear direction D2. Also, "right" and "left" are for convenience of description. “Right” and “left” correspond to “right” and “left” as viewed from a worker standing in front of the wire bonding apparatus 1.
　ベースユニット２は、キャピラリユニット３とチャンバユニット４とを支持する基体である。ワイヤボンディング装置１が稼働している期間において、ベースユニット２は、予め定められた位置を維持する。キャピラリユニット３及びチャンバユニット４は、ベースユニット２に対して移動可能に設けられる。例えば、キャピラリユニット３は、上下方向Ｄ１に往復移動する。 The base unit 2 is a base that supports the capillary unit 3 and the chamber unit 4. While the wire bonding apparatus 1 is in operation, the base unit 2 maintains a predetermined position. The capillary unit 3 and the chamber unit 4 are provided movably with respect to the base unit 2. For example, the capillary unit 3 reciprocates in the vertical direction D1.
　キャピラリユニット３は、キャピラリ６と、キャピラリアーム７と、を有する。キャピラリ６は、ワイヤを半導体チップの電極に接合する。キャピラリ６は、上下方向Ｄ１に沿って延在する円筒状の部材である。キャピラリ６の上端は、キャピラリアーム７に着脱可能に保持される。キャピラリ６は、上端側から下端側に向けて延びる貫通孔を有する。キャピラリ６の下端には開口が設けられる。貫通孔には、ワイヤが挿通される。キャピラリ６は、図示しない構成によって、ワイヤを保持する状態とワイヤを解放する状態とを相互に切り替える。キャピラリアーム７は、キャピラリ６をベースユニット２に対して連結する。キャピラリアーム７は、前後方向Ｄ２に延びる片持ち梁である。キャピラリアーム７の後端は、ベースユニット２に対して上下方向Ｄ１に沿って往復移動が可能に連結される。キャピラリアーム７の前端は、キャピラリ６の上端を着脱可能に保持する。 The capillary unit 3 has a capillary 6 and a capillary arm 7. The capillary 6 bonds the wire to the electrode of the semiconductor chip. The capillary 6 is a cylindrical member extending along the vertical direction D1. The upper end of the capillary 6 is detachably held by the capillary arm 7. The capillary 6 has a through hole extending from the upper end side to the lower end side. An opening is provided at the lower end of the capillary 6. The wire is inserted through the through hole. The capillary 6 switches between the state of holding the wire and the state of releasing the wire according to a configuration not shown. The capillary arm 7 connects the capillary 6 to the base unit 2. The capillary arm 7 is a cantilever extending in the front-rear direction D2. The rear end of the capillary arm 7 is reciprocably coupled to the base unit 2 along the vertical direction D1. The front end of the capillary arm 7 detachably holds the upper end of the capillary 6.
　チャンバユニット４は、左チャンバユニット４Ｌと、右チャンバユニット４Ｒと、を有する。左チャンバユニット４Ｌ及び右チャンバユニット４Ｒは、一方が他方に対して相対的に移動可能である。具体的には、左チャンバユニット４Ｌは、ベースユニット２に対して固定されている。つまり、左チャンバユニット４Ｌは、なんらの移動も行わない。一方、右チャンバユニット４Ｒは、ベースユニット２に対して相対的に移動可能である。換言すると、右チャンバユニット４Ｒは、ベースユニット２に固定された左チャンバユニット４Ｌに対して相対的に移動可能である。 The chamber unit 4 has a left chamber unit 4L and a right chamber unit 4R. One of the left chamber unit 4L and the right chamber unit 4R is movable relative to the other. Specifically, the left chamber unit 4L is fixed to the base unit 2. That is, the left chamber unit 4L does not move at all. On the other hand, the right chamber unit 4R is movable relative to the base unit 2. In other words, the right chamber unit 4R is movable relative to the left chamber unit 4L fixed to the base unit 2.
　左チャンバユニット４Ｌは、左アーム８Ｌ（保持部）と、左ガス供給部９Ｌ（図３等参照）と、左チャンバブロック１１Ｌ（第２チャンバブロック）と、を有する。左アーム８Ｌの基端側は、ベースユニット２に対して固定される。左アーム８Ｌの先端側には、左チャンバブロック１１Ｌが固定される。 The left chamber unit 4L has a left arm 8L (holding unit), a left gas supply unit 9L (see FIG. 3 and the like), and a left chamber block 11L (second chamber block). The proximal end side of the left arm 8L is fixed to the base unit 2. The left chamber block 11L is fixed to the tip side of the left arm 8L.
　右チャンバユニット４Ｒは、右アーム８Ｒと、右ガス供給部９Ｒと、右チャンバブロック１１Ｒ（第１チャンバブロック）と、を有する。本開示においては、左チャンバブロック１１Ｌ及び右チャンバブロック１１Ｒは、チャンバ１１（チャンバ部材）を構成する。従って、左チャンバブロック１１Ｌ及び右チャンバブロック１１Ｒは、互いに別体である。また、左ガス供給部９Ｌ及び右ガス供給部９Ｒは、ガス供給部９（不活性ガス供給路）を構成する。 The right chamber unit 4R has a right arm 8R, a right gas supply unit 9R, and a right chamber block 11R (first chamber block). In the present disclosure, the left chamber block 11L and the right chamber block 11R constitute a chamber 11 (chamber member). Therefore, the left chamber block 11L and the right chamber block 11R are separate from each other. The left gas supply unit 9L and the right gas supply unit 9R constitute a gas supply unit 9 (inert gas supply path).
　右アーム８Ｒの基端側は、ベースユニット２に対して固定される。右アーム８Ｒの先端側には、右チャンバブロック１１Ｒが固定される。右アーム８Ｒは、固定アーム１２と、可動アーム１３とを有する。固定アーム１２の基端は、ベースユニット２に対して固定される。固定アーム１２には、可動アーム１３が連結される。可動アーム１３は、Ｌ字状の形状を呈する。可動アーム１３の基端１３ａは、固定アーム１２に対して回動可能に連結される。可動アーム１３の先端１３ｂには、右チャンバブロック１１Ｒが固定される。つまり、可動アーム１３が固定アーム１２に対して回動することにより、右チャンバブロック１１Ｒが左チャンバブロック１１Ｌに対して相対的に移動する。 The proximal end side of the right arm 8R is fixed to the base unit 2. The right chamber block 11R is fixed to the front end side of the right arm 8R. The right arm 8R has a fixed arm 12 and a movable arm 13. The proximal end of the fixed arm 12 is fixed to the base unit 2. The movable arm 13 is connected to the fixed arm 12. The movable arm 13 has an L-shaped shape. The proximal end 13 a of the movable arm 13 is rotatably coupled to the fixed arm 12. The right chamber block 11R is fixed to the tip 13b of the movable arm 13. That is, when the movable arm 13 rotates with respect to the fixed arm 12, the right chamber block 11R moves relative to the left chamber block 11L.
　図２に示すように、可動アーム１３は、固定アーム１２に対してボルト１４を利用して連結される。ボルト１４の軸部１４ａは、可動アーム１３の挿通穴１３ｈに挿通される。軸部１４ａの先端は、固定アーム１２の連結穴１２ａにねじ込まれる。その結果、可動アーム１３は、ボルト１４のヘッド１４ｂと固定アーム１２との間に挟み込まれる。軸部１４ａの直径は、挿通穴１３ｈの内径よりも僅かに小さい。従って、可動アーム１３は、ボルト１４に対して滑らかに回動する。これら連結穴１２ａ、挿通穴１３ｈ及びボルト１４は、可動機構１５（可動部）を構成する。 As shown in FIG. 2, the movable arm 13 is coupled to the fixed arm 12 using a bolt 14. The shaft portion 14 a of the bolt 14 is inserted into the insertion hole 13 h of the movable arm 13. The tip of the shaft portion 14 a is screwed into the connection hole 12 a of the fixed arm 12. As a result, the movable arm 13 is sandwiched between the head 14 b of the bolt 14 and the fixed arm 12. The diameter of the shaft portion 14a is slightly smaller than the inner diameter of the insertion hole 13h. Accordingly, the movable arm 13 rotates smoothly with respect to the bolt 14. The connection hole 12a, the insertion hole 13h, and the bolt 14 constitute a movable mechanism 15 (movable portion).
　なお、右チャンバユニット４Ｒは、必要に応じてラッチ機構１７を有してもよい。ラッチ機構１７は、可動アーム１３の位置を保持する。具体的には、閉鎖形態（第１形態、図１参照）における右チャンバブロック１１Ｒの位置を保持すると共に、開放形態（第２形態、図６参照）における右チャンバブロック１１Ｒの位置を保持する。ラッチ機構１７は、第１吸着部１８と第２吸着部１９とを有する。 The right chamber unit 4R may have a latch mechanism 17 as needed. The latch mechanism 17 holds the position of the movable arm 13. Specifically, the position of the right chamber block 11R in the closed mode (first mode, see FIG. 1) is held, and the position of the right chamber block 11R in the open mode (second mode, see FIG. 6) is kept. The latch mechanism 17 has a first suction unit 18 and a second suction unit 19.
　第１吸着部１８は、第１磁石Ｍ１及び第２磁石Ｍ２を有する。ワイヤボンディング装置１が閉鎖形態であるとき、第１吸着部１８が右チャンバブロック１１Ｒの位置を維持する。つまり、第１吸着部１８は、固定アーム１２に対して可動アーム１３の位置を維持する。この維持は、第１磁石Ｍ１と第２磁石Ｍ２との間の吸引力に基づく。従って、可動アーム１３に吸引力より大きい逆方向の力を加えると、右チャンバブロック１１Ｒの位置が維持された状態が解除される。 The first adsorption unit 18 has a first magnet M1 and a second magnet M2. When the wire bonding apparatus 1 is in the closed mode, the first suction unit 18 maintains the position of the right chamber block 11R. That is, the first suction unit 18 maintains the position of the movable arm 13 with respect to the fixed arm 12. This maintenance is based on the attraction between the first magnet M1 and the second magnet M2. Therefore, when a force in the opposite direction larger than the suction force is applied to the movable arm 13, the state in which the position of the right chamber block 11R is maintained is released.
　第２吸着部１９は、第１磁石Ｍ１及び第３磁石Ｍ３を有する。ワイヤボンディング装置１が開放形態であるとき、第２吸着部１９が右チャンバブロック１１Ｒの位置を維持する。つまり、第２吸着部１９は、固定アーム１２に対して可動アーム１３の位置を維持する。この維持は、第１磁石Ｍ１と第３磁石Ｍ３との間の吸引力に基づく。従って、可動アーム１３に吸引力より大きい逆方向の力を加えると、右チャンバブロック１１Ｒの位置が維持された状態が解除される。 The second adsorption unit 19 includes a first magnet M1 and a third magnet M3. When the wire bonding apparatus 1 is in the open mode, the second suction unit 19 maintains the position of the right chamber block 11R. That is, the second suction unit 19 maintains the position of the movable arm 13 with respect to the fixed arm 12. This maintenance is based on the attraction between the first magnet M1 and the third magnet M3. Therefore, when a force in the opposite direction larger than the suction force is applied to the movable arm 13, the state in which the position of the right chamber block 11R is maintained is released.
　ワイヤボンディング装置１が稼働しているとき、ワイヤボンディング装置１においては種々の部品が機械的に動いている。第１吸着部１８によれば、これらの部品の動きに起因する振動などによって、右チャンバブロック１１Ｒの位置がずれることを抑制できる。従って、ワイヤボンディング装置１が稼働している間において、不活性ガス領域ＳＢを好適に維持することができる。 When the wire bonding apparatus 1 is in operation, various components in the wire bonding apparatus 1 are mechanically moved. According to the first suction unit 18, the displacement of the position of the right chamber block 11R can be suppressed by vibration or the like caused by the movement of these components. Therefore, while the wire bonding apparatus 1 is in operation, the inert gas area SB can be suitably maintained.
　第２吸着部１９によれば、作業者がキャピラリ６を交換する場合に、右チャンバブロック１１Ｒの位置を保持することができる。例えば、作業者が誤って可動アーム１３に触れた場合であっても右チャンバブロック１１Ｒの位置を維持し続けることができる。 According to the second suction unit 19, when the operator replaces the capillary 6, the position of the right chamber block 11R can be held. For example, even if the worker mistakenly touches the movable arm 13, the position of the right chamber block 11R can be maintained.
　ラッチ機構１７は、さらに第１緩衝部２１と第２緩衝部２２とを有してもよい。 The latch mechanism 17 may further include a first buffer 21 and a second buffer 22.
　第１緩衝部２１は、開放形態から閉鎖形態へ切り替えるときに可動アーム１３の勢いを減衰させる。従って、可動アーム１３が固定アーム１２に衝突することを抑制できる。つまり、開放形態から閉鎖形態へ切り替えるとき、可動アーム１３は、第１緩衝部２１によって勢いが弱められた後に、第１吸着部１８によって保持状態とされる。同様に、第２緩衝部２２は、閉鎖形態から開放形態へ切り替えるときに可動アーム１３の勢いを減衰させる。つまり、閉鎖形態から開放形態へ切り替えるとき、可動アーム１３は、第２緩衝部２２によって勢いが弱められた後に、第２吸着部１９によって保持状態とされる。 The first buffer portion 21 dampens the force of the movable arm 13 when switching from the open mode to the closed mode. Therefore, collision of the movable arm 13 with the fixed arm 12 can be suppressed. That is, when switching from the open mode to the closed mode, the movable arm 13 is held by the first suction unit 18 after the momentum is reduced by the first buffer unit 21. Similarly, the second buffer 22 dampens the momentum of the movable arm 13 when switching from the closed mode to the open mode. That is, when the mode is switched from the closed mode to the open mode, the movable arm 13 is held by the second suction unit 19 after the second cushioning section 22 reduces the force.
　第１緩衝部２１は、第４磁石Ｍ４と第５磁石Ｍ５とを有する。第４磁石Ｍ４は、固定アーム１２に配置される。第５磁石Ｍ５は、可動アーム１３に配置される。閉鎖形態とされたとき、第４磁石Ｍ４と第５磁石Ｍ５とは互いに対面する。つまり、第１緩衝部２１は、閉鎖形態への移行が完了する直前にその機能を奏する。第１緩衝部２１は、第４磁石Ｍ４及び第５磁石Ｍ５により生じる反発力を利用して、可動アーム１３の勢いを弱める。そこで、第４磁石Ｍ４及び第５磁石Ｍ５は、同極の面が対面する。 The first buffer unit 21 has a fourth magnet M4 and a fifth magnet M5. The fourth magnet M4 is disposed on the fixed arm 12. The fifth magnet M5 is disposed on the movable arm 13. When in the closed mode, the fourth magnet M4 and the fifth magnet M5 face each other. That is, the first buffer unit 21 plays its function immediately before the transition to the closed mode is completed. The first buffer unit 21 reduces the force of the movable arm 13 using the repulsive force generated by the fourth magnet M4 and the fifth magnet M5. Therefore, the faces of the same poles of the fourth magnet M4 and the fifth magnet M5 face each other.
　第２緩衝部２２は、第４磁石Ｍ４と第６磁石Ｍ６とを有する。第６磁石Ｍ６は、固定アーム１２に配置される。開放形態とされたとき、第４磁石Ｍ４と第６磁石Ｍ６とは互いに対面する。つまり、第２緩衝部２２は、開放形態への移行が完了する直前にその機能を奏する。第４磁石Ｍ４及び第６磁石Ｍ６は、同極の面が対面する。 The second buffer portion 22 has a fourth magnet M4 and a sixth magnet M6. The sixth magnet M6 is disposed on the fixed arm 12. When in the open configuration, the fourth magnet M4 and the sixth magnet M6 face each other. That is, the second buffer unit 22 plays its function immediately before the transition to the open mode is completed. The faces of the same poles of the fourth magnet M4 and the sixth magnet M6 face each other.
　続いて、左チャンバブロック１１Ｌ及び右チャンバブロック１１Ｒについて詳細に説明する。 Subsequently, the left chamber block 11L and the right chamber block 11R will be described in detail.
　図３に示すように、左チャンバブロック１１Ｌは、第３包囲面Ｐ３と、左ガス供給穴９Ｌａとを有する。左チャンバブロック１１Ｌは、キャピラリ６の左側に配置される。左チャンバブロック１１Ｌの先端１１Ｌａは、キャピラリアーム７の前端面７ｃよりも後側に配置される。つまり、左チャンバブロック１１Ｌは、キャピラリアーム７の左側面７ａを部分的に包囲する。キャピラリアーム７の左側面７ａと対面する部分は、第３包囲面Ｐ３である。第３包囲面Ｐ３は、左右方向Ｄ３と直交する面である。 As shown in FIG. 3, the left chamber block 11L has a third surrounding surface P3 and a left gas supply hole 9La. The left chamber block 11L is disposed on the left side of the capillary 6. The tip end 11La of the left chamber block 11L is disposed rearward of the front end face 7c of the capillary arm 7. That is, the left chamber block 11L partially surrounds the left side surface 7a of the capillary arm 7. The portion facing the left side surface 7a of the capillary arm 7 is a third surrounding surface P3. The third surrounding surface P3 is a surface orthogonal to the left-right direction D3.
　図４に示すように、チャンバプレート１６（板部材）は、左チャンバブロック１１Ｌのブロック下面１１Ｌｂに取り付けられる。チャンバプレート１６には、キャピラリ６が挿通される通過孔１６ａが設けられる。チャンバプレート１６は、第３包囲面Ｐ３から後述する右チャンバブロック１１Ｒに向けて延びる。チャンバプレート１６は、キャピラリアーム７が最も下方に位置したときのキャピラリアーム７の底面７ｄよりもさらに下方に配置される。チャンバプレート１６は、キャピラリアーム７の底面７ｄを覆う。 As shown in FIG. 4, the chamber plate 16 (plate member) is attached to the block lower surface 11Lb of the left chamber block 11L. The chamber plate 16 is provided with a passage hole 16 a through which the capillary 6 is inserted. The chamber plate 16 extends from the third surrounding surface P3 toward the right chamber block 11R described later. The chamber plate 16 is disposed further below the bottom surface 7 d of the capillary arm 7 when the capillary arm 7 is positioned at the lowermost position. The chamber plate 16 covers the bottom surface 7 d of the capillary arm 7.
　図３に示すように、左ガス供給穴９Ｌａは、第３包囲面Ｐ３に形成された排出開口を有する。左ガス供給穴９Ｌａは、左ガス供給管９Ｌｂから供給される不活性ガスを排出開口から吐き出す。左ガス供給穴９Ｌａの排出開口の軸線Ａ２は、キャピラリ６の軸線Ａ１と交差する。 As shown in FIG. 3, the left gas supply hole 9La has a discharge opening formed in the third surrounding surface P3. The left gas supply hole 9La discharges the inert gas supplied from the left gas supply pipe 9Lb from the discharge opening. The axis A2 of the discharge opening of the left gas supply hole 9La intersects with the axis A1 of the capillary 6.
　右チャンバブロック１１Ｒは、第１包囲面Ｐ１と、第２包囲面Ｐ２と、第１右ガス供給穴９Ｒａと、第２右ガス供給穴９Ｒｃと、を有する。右チャンバブロック１１Ｒは、キャピラリ６の右側に配置される。右チャンバブロック１１Ｒは、キャピラリアーム７の右側面７ｂから前端面７ｃに亘ってキャピラリアーム７を包囲する。キャピラリアーム７の右側面７ｂと対面する部分は、第１包囲面Ｐ１である。キャピラリアーム７の前端面７ｃと対面する部分は、第２包囲面Ｐ２である。 The right chamber block 11R has a first surrounding surface P1, a second surrounding surface P2, a first right gas supply hole 9Ra, and a second right gas supply hole 9Rc. The right chamber block 11R is disposed on the right side of the capillary 6. The right chamber block 11R surrounds the capillary arm 7 from the right side surface 7b of the capillary arm 7 to the front end surface 7c. The portion facing the right side surface 7b of the capillary arm 7 is a first surrounding surface P1. A portion facing the front end surface 7c of the capillary arm 7 is a second surrounding surface P2.
　第１包囲面Ｐ１は、第３包囲面Ｐ３と対面する。また、第１包囲面Ｐ１は、左右方向Ｄ３と直交する面である。第２包囲面Ｐ２は、前後方向Ｄ２と交差する面である。第２包囲面Ｐ２は、右包囲面Ｐ２ａと左包囲面Ｐ２ｂとを含む。右包囲面Ｐ２ａは、第１包囲面Ｐ１に連続する。左包囲面Ｐ２ｂは、右包囲面Ｐ２ａに連続する。右包囲面Ｐ２ａと左包囲面Ｐ２ｂとの間の角度は、約９０度である。右包囲面Ｐ２ａと左包囲面Ｐ２ｂとの境界部は、軸線Ａ１をとおり前後方向Ｄ２と平行な軸線と交差してもよい。従って、右包囲面Ｐ２ａは、キャピラリアーム７の前端面７ｃにおける右側と対面する。左包囲面Ｐ２ｂは、キャピラリアーム７の前端面７ｃにおける左側と対面する。左包囲面Ｐ２ｂの先端と、左チャンバブロック１１Ｌの先端１１Ｌａとの間には、隙間が設けられる。 The first surrounding surface P1 faces the third surrounding surface P3. The first surrounding surface P1 is a surface orthogonal to the left-right direction D3. The second surrounding surface P2 is a surface intersecting with the front-rear direction D2. The second surrounding surface P2 includes a right surrounding surface P2a and a left surrounding surface P2b. The right surrounding surface P2a is continuous with the first surrounding surface P1. The left surrounding surface P2b is continuous with the right surrounding surface P2a. The angle between the right surrounding surface P2a and the left surrounding surface P2b is about 90 degrees. The boundary between the right surrounding surface P2a and the left surrounding surface P2b may pass through the axis A1 and intersect with an axis parallel to the front-rear direction D2. Therefore, the right surrounding surface P2a faces the right side of the front end surface 7c of the capillary arm 7. The left surrounding surface P2b faces the left side of the front end surface 7c of the capillary arm 7. A gap is provided between the tip of the left surrounding surface P2b and the tip 11La of the left chamber block 11L.
　ガス管９Ｒｂは、第１右ガス供給穴９Ｒａに接続されている。第１右ガス供給穴９Ｒａは、第２包囲面Ｐ２に形成された排出開口を有する。当該排出開口は、キャピラリ６に向けて不活性ガスを吐き出す。第１右ガス供給穴９Ｒａの排出開口の軸線Ａ３は、軸線Ａ１をとおる。 The gas pipe 9Rb is connected to the first right gas supply hole 9Ra. The first right gas supply hole 9Ra has a discharge opening formed in the second surrounding surface P2. The discharge opening discharges the inert gas toward the capillary 6. The axis A3 of the discharge opening of the first right gas supply hole 9Ra passes through the axis A1.
　ガス管９Ｒｄは、第２右ガス供給穴９Ｒｃに接続されている。第２右ガス供給穴９Ｒｃは、右チャンバブロック１１Ｒの下面に形成された排出開口を有する。当該排出開口は、不活性ガスを吐き出す。第２右ガス供給穴９Ｒｃの軸線Ａ４を平面視したとき、軸線Ａ４は、軸線Ａ１上において、左ガス供給穴９Ｌａの軸線Ａ２及び第１右ガス供給穴９Ｒａの軸線Ａ３と交差する。 The gas pipe 9Rd is connected to the second right gas supply hole 9Rc. The second right gas supply hole 9Rc has an exhaust opening formed on the lower surface of the right chamber block 11R. The discharge opening discharges the inert gas. When the axis A4 of the second right gas supply hole 9Rc is viewed in plan, the axis A4 intersects the axis A2 of the left gas supply hole 9La and the axis A3 of the first right gas supply hole 9Ra on the axis A1.
　以下、ワイヤボンディング装置１の動作について説明する。ワイヤボンディング装置１は、閉鎖形態（図１参照）と開放形態（図６及び図７参照）とを相互に切替可能である。ワイヤボンディング装置１は、ワイヤボンドを行う場合に、閉鎖形態とされる。一方、ワイヤボンディング装置１は、作業者がワイヤボンディング装置１に対して何らかの操作を行う場合に、開放形態とされる。この操作には、点検作業及び保守作業を含む。例えば、操作の一例として、キャピラリ６を交換する作業などが挙げられる。切り替え動作は、例えば、作業者が可動アーム１３を手動で動かすことにより行われてもよい。 Hereinafter, the operation of the wire bonding apparatus 1 will be described. The wire bonding apparatus 1 can switch between a closed mode (see FIG. 1) and an open mode (see FIGS. 6 and 7). The wire bonding apparatus 1 is in a closed form when performing wire bonding. On the other hand, when the operator performs some operation on the wire bonding apparatus 1, the wire bonding apparatus 1 is in an open form. This operation includes inspection work and maintenance work. For example, an operation of replacing the capillary 6 may be mentioned as an example of the operation. The switching operation may be performed, for example, by the worker manually moving the movable arm 13.
　閉鎖形態と開放形態とでは、右チャンバブロック１１Ｒの位置が互いに相違する。一方、閉鎖形態と開放形態とでは、左チャンバブロック１１Ｌの位置が互いに同じである。さらに、閉鎖形態と開放形態とにおいて、キャピラリ６の位置は問われない。 The position of the right chamber block 11R is different between the closed mode and the open mode. On the other hand, in the closed mode and the open mode, the positions of the left chamber block 11L are the same as each other. Furthermore, the position of the capillary 6 does not matter in the closed mode and the open mode.
　図５に示すように、ワイヤボンディング装置１を閉鎖形態としたとき、不活性ガス領域ＳＢが形成される。従って、閉鎖形態とは、不活性ガス領域ＳＢを形成するための形態である。不活性ガス領域ＳＢは、その機能から説明すると、フリーエアボールの酸化を抑制する領域である。これに対して、不活性ガス領域ＳＢは、その構造から説明すると、少なくとも左チャンバブロック１１Ｌと右チャンバブロック１１Ｒとに囲まれた領域である。 As shown in FIG. 5, when the wire bonding apparatus 1 is in the closed mode, an inert gas region SB is formed. Therefore, the closed mode is a mode for forming the inert gas region SB. The inactive gas region SB is a region that suppresses the oxidation of the free air ball, as described in terms of its function. On the other hand, the inert gas region SB is a region surrounded by at least the left chamber block 11L and the right chamber block 11R, as described from the structure thereof.
　具体的には、不活性ガス領域ＳＢは、第３包囲面Ｐ３と、チャンバプレート１６と、第１包囲面Ｐ１と、右包囲面Ｐ２ａと、左包囲面Ｐ２ｂとに囲まれた空間である。すなわち、不活性ガス領域ＳＢは、５つの面が囲まれた領域である。このようにキャピラリ６の周囲を囲むための右チャンバブロック１１Ｒの位置を、第１位置と呼ぶ。従って、右チャンバブロック１１Ｒが第１位置にあるとき、右チャンバブロック１１Ｒの一部（第１包囲面Ｐ１の一部及び第２包囲面Ｐ２）は、キャピラリ６よりも前側に配置される。フリーエアボールが形成されるときには、フリーエアボールの上方にはキャピラリアーム７が配置される（図４参照）。従って、不活性ガス領域ＳＢは、キャピラリアーム７の底面７ｄを加えると、６つの面が囲まれた領域である。 Specifically, the inert gas region SB is a space surrounded by the third surrounding surface P3, the chamber plate 16, the first surrounding surface P1, the right surrounding surface P2a, and the left surrounding surface P2b. That is, the inert gas area SB is an area in which five surfaces are enclosed. The position of the right chamber block 11R for surrounding the periphery of the capillary 6 in this manner is called a first position. Therefore, when the right chamber block 11R is in the first position, a part of the right chamber block 11R (a part of the first surrounding surface P1 and the second surrounding surface P2) is disposed on the front side of the capillary 6. When the free air ball is formed, the capillary arm 7 is disposed above the free air ball (see FIG. 4). Therefore, the inert gas area SB is an area where six surfaces are surrounded by adding the bottom surface 7 d of the capillary arm 7.
　このような閉鎖形態によれば、不活性ガスを、第３包囲面Ｐ３と、チャンバプレート１６と、第１包囲面Ｐ１と、右包囲面Ｐ２ａと、左包囲面Ｐ２ｂと、キャピラリアーム７の底面７ｄとに囲まれた空間に、閉じ込めることができる。従って、不活性ガスを不活性ガス領域ＳＢに留めることが可能になる。その結果、フリーエアボールの酸化を好適に抑制することができる。 According to such a closed mode, the inert gas is contained in the third surrounding surface P3, the chamber plate 16, the first surrounding surface P1, the right surrounding surface P2a, the left surrounding surface P2b, and the bottom surface of the capillary arm 7. It can be confined in the space surrounded by 7d. Therefore, it is possible to keep the inert gas in the inert gas region SB. As a result, oxidation of the free air ball can be suitably suppressed.
　図６及び図７に示すように、ワイヤボンディング装置１を開放形態としたとき、作業スペースＳ２が形成される。開放形態は、その機能から説明すると、作業スペースＳ２を形成するための形態である。開放形態であるとき、作業者とキャピラリアーム７の先端との間には、物理的な部品で遮られていない領域（つまり作業スペースＳ２）が形成される。開放形態は、その構造から説明すると、右チャンバブロック１１Ｒをキャピラリアーム７から離間させた形態である。この離間させた位置は、右チャンバブロック１１Ｒの第２位置である。 As shown in FIGS. 6 and 7, when the wire bonding apparatus 1 is in the open mode, a work space S2 is formed. The open mode is a mode for forming the work space S2, as described from the function thereof. When in the open configuration, an area (that is, a work space S2) not blocked by physical parts is formed between the worker and the tip of the capillary arm 7. The open configuration is a configuration in which the right chamber block 11R is separated from the capillary arm 7, as described from the structure thereof. This spaced position is the second position of the right chamber block 11R.
　より具体的に、各軸線方向における右チャンバブロック１１Ｒの位置を説明する。まず、上下方向Ｄ１においては、右チャンバブロック１１Ｒは、キャピラリアーム７の先端及びキャピラリ６よりも上方に配置される。次に、前後方向Ｄ２においては、右チャンバブロック１１Ｒは、キャピラリアーム７の先端及びキャピラリ６よりも後ろ側に配置される。この位置は、キャピラリアーム７の先端及びキャピラリ６とベースユニット２との間である。さらに、左右方向Ｄ３においては、右チャンバブロック１１Ｒは、キャピラリアーム７の先端及びキャピラリ６よりも右側に離間する。 More specifically, the position of the right chamber block 11R in each axial direction will be described. First, in the vertical direction D1, the right chamber block 11R is disposed above the tip of the capillary arm 7 and the capillary 6. Next, in the front-rear direction D2, the right chamber block 11R is disposed behind the tip of the capillary arm 7 and the capillary 6. This position is between the tip of capillary arm 7 and capillary 6 and base unit 2. Furthermore, in the left-right direction D3, the right chamber block 11R is separated to the right from the tip of the capillary arm 7 and the capillary 6.
　閉鎖形態から開放形態に切り替えるとき、右チャンバブロック１１Ｒは、キャピラリアーム７の先端に対して、右斜め後ろに移動する。右チャンバブロック１１Ｒをキャピラリアーム７から離間させる構成は、可動機構１５によって実現される。可動機構１５のボルト１４の軸線ＡＲは、前後方向Ｄ２に対して直交する。さらに、軸線ＡＲは、上下方向Ｄ１及び左右方向Ｄ３のそれぞれに対して傾いている。例えば、ボルト１４の軸線ＡＲは、左右方向Ｄ３に対して４５度傾いている。また、軸線ＡＲは、キャピラリ６とベースユニット２との間に配置される。 When switching from the closed mode to the open mode, the right chamber block 11R moves obliquely backward right with respect to the tip of the capillary arm 7. The configuration in which the right chamber block 11R is separated from the capillary arm 7 is realized by the movable mechanism 15. The axis AR of the bolt 14 of the movable mechanism 15 is orthogonal to the front-rear direction D2. Further, the axis AR is inclined with respect to each of the vertical direction D1 and the horizontal direction D3. For example, the axis AR of the bolt 14 is inclined 45 degrees with respect to the left-right direction D3. The axis AR is disposed between the capillary 6 and the base unit 2.
　このような第２位置によれば、キャピラリアーム７の右側面７ｂと前端面７ｃとを開放することができる。つまり、作業者は、キャピラリアーム７の前端面７ｃ側を正面から目視することが可能になる。さらに、作業者は、キャピラリアーム７の右側面７ｂの側からアクセスし、キャピラリ６の交換作業などを行うことができる。このとき、右チャンバブロック１１Ｒは、キャピラリアーム７の前端面７ｃよりも上方に位置する。その結果、作業者は、キャピラリアーム７の右側面７ｂに対して右から左に向かってアクセスすることができる。従って、作業性をより向上させ得る。 According to such a second position, the right side surface 7b and the front end surface 7c of the capillary arm 7 can be opened. That is, the operator can visually observe the front end surface 7c side of the capillary arm 7 from the front. Further, the operator can access from the side of the right side surface 7 b of the capillary arm 7 and perform the replacement work of the capillary 6 or the like. At this time, the right chamber block 11R is located above the front end surface 7c of the capillary arm 7. As a result, the operator can access the right side surface 7 b of the capillary arm 7 from right to left. Therefore, the workability can be further improved.
　さらに、図１に示すように、本開示に係るワイヤボンディング装置１は、シャッタユニット３０と、フィーダユニット４０とを有する。シャッタユニット３０は、フィーダユニット４０の上に配置される。そして、シャッタユニット３０は、フィーダユニット４０から排出される不活性ガスをキャピラリ６の下方まで導く。シャッタユニット３０は、チャンバユニット４と協働して不活性ガス領域形成部２０を構成する。フィーダユニット４０は、ワイヤが接続されていない半導体チップユニット１００（後述）をキャピラリ６の下方に順次搬送する。また、フィーダユニット４０は、ワイヤが接続された半導体チップユニット１００をキャピラリ６の下方から搬出する。さらに、フィーダユニット４０は、閉鎖空間を形成する。この閉鎖空間には、不活性ガスが供給される。従って、フィーダユニット４０の内部には、不活性ガス領域が形成される。この不活性ガス領域は、フリーエアボールを電極に接続する場所を含む。従って、ワイヤ接続中におけるフリーエアボールの酸化及び電極の酸化を抑制できる。つまり、ワイヤボンディング装置１は、不活性ガス領域を形成する。不活性ガス領域は、キャピラリ６がフリーエアボールを形成する位置から、キャピラリ６がフリーエアボールを電極に接続する位置までを包含する。 Furthermore, as shown in FIG. 1, the wire bonding apparatus 1 according to the present disclosure includes a shutter unit 30 and a feeder unit 40. The shutter unit 30 is disposed on the feeder unit 40. Then, the shutter unit 30 guides the inert gas discharged from the feeder unit 40 to the lower side of the capillary 6. The shutter unit 30 cooperates with the chamber unit 4 to form an inert gas area forming unit 20. The feeder unit 40 sequentially transports the semiconductor chip unit 100 (described later) to which the wire is not connected below the capillary 6. Further, the feeder unit 40 carries out the semiconductor chip unit 100 to which the wire is connected from below the capillary 6. Furthermore, the feeder unit 40 forms a closed space. An inert gas is supplied to this enclosed space. Therefore, an inert gas region is formed inside the feeder unit 40. The inert gas region includes where the free air ball is connected to the electrode. Therefore, it is possible to suppress the oxidation of free air balls and the oxidation of electrodes during wire connection. That is, the wire bonding apparatus 1 forms an inert gas region. The inert gas region includes from the position where the capillary 6 forms the free air ball to the position where the capillary 6 connects the free air ball to the electrode.
　図８に示すように、フィーダユニット４０は、ハウジング４１と、ガス供給部４２と、ボンディングステージ４３と、ウインドクランパ４４と、を有する。 As shown in FIG. 8, the feeder unit 40 includes a housing 41, a gas supply unit 42, a bonding stage 43, and a window clamper 44.
　ハウジング４１は、中空の箱状を呈する。ハウジング４１は、図示しない搬送機構によって、半導体チップユニット１００を左右方向Ｄ３に搬送する。ハウジング４１は、左右方向Ｄ３に沿って延びる。ハウジング４１は、ハウジング上板４１ａと、ハウジング下板４１ｂと、開口４１ｈと、を有する。ハウジング上板４１ａは、シャッタユニット３０と対面する。開口４１ｈは、ハウジング上板４１ａに形成される。開口４１ｈは、平面視して矩形状を呈する。 The housing 41 has a hollow box shape. The housing 41 transports the semiconductor chip unit 100 in the left-right direction D3 by a transport mechanism (not shown). The housing 41 extends along the left-right direction D3. The housing 41 has a housing upper plate 41a, a housing lower plate 41b, and an opening 41h. The housing upper plate 41 a faces the shutter unit 30. The opening 41 h is formed in the housing upper plate 41 a. The opening 41 h has a rectangular shape in plan view.
　ガス供給部４２は、ハウジング４１の内部に配置される。ガス供給部４２は、半導体チップユニット１００の周囲に対して不活性ガスを供給する。ガス供給部４２は、主面４２ａと、裏面４２ｂと、ガス受入管４２ｃと、ガス供給穴４２ｈとを有する。ガス供給部４２は、箱状を呈する。ガス供給部４２は、ガス受入管４２ｃを利用して外部のガス源と接続される。主面４２ａは、ハウジング上板４１ａと対面する。裏面４２ｂは、ハウジング下板４１ｂと対面する。ガス供給穴４２ｈは、主面４２ａに設けられる。 The gas supply unit 42 is disposed inside the housing 41. The gas supply unit 42 supplies an inert gas to the periphery of the semiconductor chip unit 100. The gas supply unit 42 has a main surface 42a, a back surface 42b, a gas receiving pipe 42c, and a gas supply hole 42h. The gas supply unit 42 has a box shape. The gas supply unit 42 is connected to an external gas source using a gas receiving pipe 42c. The main surface 42a faces the housing upper plate 41a. The back surface 42b faces the housing lower plate 41b. The gas supply holes 42 h are provided in the main surface 42 a.
　ボンディングステージ４３は、半導体チップユニット１００を支持する。また、ボンディングステージ４３は、ガス供給部４２から提供された不活性ガスを半導体チップユニット１００の周囲に分配する。ボンディングステージ４３は、主面４３ａと、裏面４３ｂと、分配領域４３ｓと、開口４３ｈ（第２開口部）と、を有する。主面４３ａは、ハウジング上板４１ａと対面する。主面４３ａには、半導体チップユニット１００が載置される。裏面４３ｂは、ガス供給部４２の主面４２ａと対面する。分配領域４３ｓは、裏面４３ｂに設けられる。分配領域４３ｓは、裏面４３ｂから厚み方向に凹んだ領域である。開口４３ｈは、分配領域４３ｓから主面４３ａに貫通する細い孔である。ボンディングステージ４３は、複数の開口４３ｈを有する。 The bonding stage 43 supports the semiconductor chip unit 100. In addition, the bonding stage 43 distributes the inert gas supplied from the gas supply unit 42 around the semiconductor chip unit 100. Bonding stage 43 has main surface 43a, back surface 43b, distribution region 43s, and opening 43h (second opening). The main surface 43a faces the housing upper plate 41a. The semiconductor chip unit 100 is mounted on the main surface 43a. The back surface 43 b faces the main surface 42 a of the gas supply unit 42. The distribution area 43s is provided on the back surface 43b. The distribution area 43s is an area recessed from the back surface 43b in the thickness direction. The opening 43 h is a thin hole penetrating from the distribution area 43 s to the main surface 43 a. Bonding stage 43 has a plurality of openings 43 h.
　半導体チップユニット１００は、ボンディングステージ４３の主面４３ａ上に載置される。半導体チップユニット１００は、基板１０１と複数の半導体チップ（不図示）とを有する。基板１０１は、主面１０１ａと裏面１０１ｂと、を有する。主面１０１ａは、ウインドクランパ４４と接触する。主面１０１ａには、複数のワイヤ接続領域１０１ｃが設定される。ワイヤ接続領域１０１ｃは、キャピラリ６を利用してワイヤが接続される導電接続部と、開口１０１ｈ（第１開口部）と、を含む。開口１０１ｈは、規則的又は不規則的に形成されている。いくつかの開口１０１ｈは、開口４３ｈと連通する。裏面１０１ｂは、ボンディングステージ４３と接触する。 The semiconductor chip unit 100 is mounted on the main surface 43 a of the bonding stage 43. The semiconductor chip unit 100 has a substrate 101 and a plurality of semiconductor chips (not shown). The substrate 101 has a main surface 101 a and a back surface 101 b. The main surface 101 a contacts the wind clamper 44. A plurality of wire connection areas 101c are set on the main surface 101a. The wire connection area 101 c includes a conductive connection portion to which a wire is connected using the capillary 6 and an opening 101 h (first opening). The openings 101 h are formed regularly or irregularly. Some openings 101h communicate with the openings 43h. The back surface 101 b is in contact with the bonding stage 43.
　ウインドクランパ４４は、ハウジング４１に取り付けられる。具体的には、ウインドクランパ４４は、ハウジング上板４１ａに取り付けられる。その結果、ウインドクランパ４４は、ハウジング４１の開口４１ｈを閉鎖する。ウインドクランパ４４は、フィルム状の半導体チップユニット１００をボンディングステージ４３に押し当てる。その結果、半導体チップユニット１００の位置が保持される。つまり、半導体チップユニット１００は、ウインドクランパ４４とボンディングステージ４３とによって挟持される。 The wind clamper 44 is attached to the housing 41. Specifically, the window clamper 44 is attached to the housing upper plate 41a. As a result, the wind clamper 44 closes the opening 41 h of the housing 41. The window clamper 44 presses the film-like semiconductor chip unit 100 against the bonding stage 43. As a result, the position of the semiconductor chip unit 100 is held. That is, the semiconductor chip unit 100 is held by the window clamper 44 and the bonding stage 43.
　ウインドクランパ４４は、主面４４ａと、裏面４４ｂと、クランプ部４４ｃと、開口４４ｈ（第３開口部）とを有する。主面４４ａは、シャッタユニット３０と対面する。裏面４４ｂは、ハウジング上板４１ａ、ボンディングステージ４３及び半導体チップユニット１００と対面する。クランプ部４４ｃは、裏面４４ｂに設けられている。また、クランプ部４４ｃは、半導体チップユニット１００に向けて突出する。クランプ部４４ｃは、半導体チップユニット１００に接触する。クランプ部４４ｃは、半導体チップユニット１００上に形成される。 The window clamper 44 has a main surface 44a, a back surface 44b, a clamp portion 44c, and an opening 44h (third opening). The main surface 44 a faces the shutter unit 30. The back surface 44 b faces the housing upper plate 41 a, the bonding stage 43 and the semiconductor chip unit 100. The clamp portion 44c is provided on the back surface 44b. Further, the clamp portion 44 c protrudes toward the semiconductor chip unit 100. The clamp unit 44 c contacts the semiconductor chip unit 100. The clamp portion 44 c is formed on the semiconductor chip unit 100.
　ウインドクランパ４４の開口４４ｈは、左右方向Ｄ３に沿って２列に設けられている。開口４４ｈは、前後方向Ｄ２に複数個設けられる。開口４４ｈは、主面４４ａからクランプ部４４ｃの当接面まで貫通する貫通穴である。開口４４ｈは、半導体チップユニット１００に設けられたいずれかの開口１０１ｈと連通する。開口４４ｈは、ワイヤ接続領域１０１ｃに対応して設けられる。開口４４ｈは、キャピラリ６の先端を半導体チップユニット１００まで導く。具体的には、開口４４ｈは、ワイヤ接続領域１０１ｃを露出させる。ワイヤ接続領域１０１ｃは、ボンディングが行われる半導体チップユニット１００の電極パッドといった導電接続部を含む。一つの開口４４ｈは、一つのワイヤ接続領域１０１ｃを露出させてもよい。また、一つの開口４４ｈは、複数のワイヤ接続領域１０１ｃを露出させてもよい。 The openings 44h of the wind clamper 44 are provided in two rows along the left-right direction D3. A plurality of openings 44 h are provided in the front-rear direction D2. The opening 44 h is a through hole penetrating from the main surface 44 a to the contact surface of the clamp portion 44 c. The openings 44 h communicate with any of the openings 101 h provided in the semiconductor chip unit 100. The opening 44 h is provided corresponding to the wire connection area 101 c. The opening 44 h guides the tip of the capillary 6 to the semiconductor chip unit 100. Specifically, the opening 44 h exposes the wire connection area 101 c. The wire connection area 101 c includes a conductive connection portion such as an electrode pad of the semiconductor chip unit 100 to which bonding is performed. One opening 44 h may expose one wire connection area 101 c. Also, one opening 44 h may expose a plurality of wire connection areas 101 c.
　図９に示すように、フィーダユニット４０上には、シャッタユニット３０が配置される。シャッタユニット３０は、シャッタ板３１（シャッタ）と、右連結部３２Ｒと、左連結部３２Ｌとを有する。シャッタ板３１は、ハウジング上板４１ａの一部を覆う。右連結部３２Ｒ及び左連結部３２Ｌは、シャッタ板３１をボンディングツール１０に連結する。このような構成によれば、ボンディングツール１０が水平面（前後方向Ｄ２及び左右方向Ｄ３が形成する平面）に沿って移動したとき、シャッタユニット３０もボンディングツール１０の移動に伴って水平方向に移動する。つまり、シャッタユニット３０は、キャピラリ６がワイヤ接続領域１０１ｃにワイヤを接続するときに、キャピラリ６と共にウインドクランパ４４及び基板１０１に対して移動する。 As shown in FIG. 9, the shutter unit 30 is disposed on the feeder unit 40. The shutter unit 30 has a shutter plate 31 (shutter), a right connecting portion 32R, and a left connecting portion 32L. The shutter plate 31 covers a part of the housing upper plate 41a. The right connecting portion 32R and the left connecting portion 32L connect the shutter plate 31 to the bonding tool 10. According to such a configuration, when the bonding tool 10 moves along the horizontal surface (the plane formed by the front-rear direction D2 and the left-right direction D3), the shutter unit 30 also moves in the horizontal direction as the bonding tool 10 moves. . That is, the shutter unit 30 moves relative to the window clamper 44 and the substrate 101 together with the capillary 6 when the capillary 6 connects a wire to the wire connection area 101 c.
　シャッタ板３１は、フィーダユニット４０のウインドクランパ４４上に配置されている。シャッタ板３１は、ウインドクランパ４４を覆う。より具体的には、シャッタ板３１は、ウインドクランパ４４の開口４４ｈ上に配置される。 The shutter plate 31 is disposed on the window clamper 44 of the feeder unit 40. The shutter plate 31 covers the wind clamper 44. More specifically, the shutter plate 31 is disposed on the opening 44 h of the window clamper 44.
　シャッタ板３１は、主面３１ａと、裏面３１ｂと、開口３１ｈ（第４開口部）と、ブロック対面部３１ｃ（第１対面部）（図１０参照）と、を有する。シャッタ板３１の裏面３１ｂとウインドクランパ４４の主面４４ａとの間には僅かな隙間が形成される。 The shutter plate 31 has a main surface 31a, a back surface 31b, an opening 31h (fourth opening), and a block facing portion 31c (first facing portion) (see FIG. 10). A slight gap is formed between the back surface 31 b of the shutter plate 31 and the main surface 44 a of the window clamper 44.
　図１０に示すように、開口３１ｈは、キャピラリ導入穴部３２ａとブロック導入穴部３２ｂとを含む。キャピラリ導入穴部３２ａは、キャピラリ６の移動軌跡（上下方向Ｄ１）と交差する位置に設けられる。開口３１ｈは、ウインドクランパ４４の一部を露出させる。ウインドクランパ４４の一部は、開口４４ｈを含む。従って、キャピラリ６の先端は、キャピラリ導入穴部３２ａ及び開口４４ｈを介して半導体チップユニット１００へ到達することができる。 As shown in FIG. 10, the opening 31h includes a capillary introducing hole 32a and a block introducing hole 32b. The capillary introduction hole 32a is provided at a position intersecting the movement trajectory (vertical direction D1) of the capillary 6. The opening 31 h exposes a part of the wind clamper 44. A portion of the wind clamper 44 includes an opening 44 h. Accordingly, the tip of the capillary 6 can reach the semiconductor chip unit 100 through the capillary introduction hole 32a and the opening 44h.
　ブロック導入穴部３２ｂは、左チャンバブロック１１Ｌの一部を収容する。図１１に示すように、具体的には、ブロック導入穴部３２ｂは、左チャンバブロック１１Ｌの下部と、チャンバプレート１６と、チャンバフランジ１１ｓと、を収容する。例えば、チャンバプレート１６のプレート下面１６ｃは、シャッタ板３１の主面３１ａと裏面３１ｂとの間に配置されてもよい。また、プレート下面１６ｃは、裏面３１ｂと面一に配置されてもよい。 The block introduction hole 32b accommodates a part of the left chamber block 11L. As shown in FIG. 11, specifically, the block introduction hole 32b accommodates the lower portion of the left chamber block 11L, the chamber plate 16, and the chamber flange 11s. For example, the plate lower surface 16 c of the chamber plate 16 may be disposed between the main surface 31 a and the back surface 31 b of the shutter plate 31. Also, the plate lower surface 16c may be disposed flush with the back surface 31b.
　図１０に示すように、ブロック対面部３１ｃは、開口３１ｈの近傍に形成される。ブロック対面部３１ｃは、右チャンバブロック１１Ｒのブロック下面１１Ｒｂと対面する。右チャンバブロック１１Ｒは、主面３１ａとの間に僅かな隙間を形成する位置に配置される。従って、右チャンバブロック１１Ｒは、左チャンバブロック１１Ｌのように、シャッタ板３１に入り込まない。 As shown in FIG. 10, the block facing portion 31c is formed in the vicinity of the opening 31h. The block facing portion 31c faces the block lower surface 11Rb of the right chamber block 11R. The right chamber block 11R is disposed at a position where a slight gap is formed between the right chamber block 11R and the main surface 31a. Therefore, the right chamber block 11R does not enter the shutter plate 31 like the left chamber block 11L.
　右連結部３２Ｒは、主面３１ａに固定されている。また、右連結部３２Ｒは、アングル部材を介して右アーム８Ｒに連結される。左連結部３２Ｌは、主面３１ａに固定されている。また、左連結部３２Ｌは、右連結部３２Ｒに対して左方向に離間する。さらに、左連結部３２Ｌは、左アーム８Ｌに連結される。つまり、シャッタユニット３０は、右アーム８Ｒ及び左アーム８Ｌを介して、ボンディングツール１０に連結されている。 The right connecting portion 32R is fixed to the main surface 31a. In addition, the right connecting portion 32R is connected to the right arm 8R via an angle member. The left connecting portion 32L is fixed to the main surface 31a. In addition, the left connecting portion 32L is separated from the right connecting portion 32R in the left direction. Furthermore, the left connecting portion 32L is connected to the left arm 8L. That is, the shutter unit 30 is connected to the bonding tool 10 via the right arm 8R and the left arm 8L.
　以下、ワイヤボンディング装置１の作用効果について説明する。 Hereinafter, the operation and effect of the wire bonding apparatus 1 will be described.
　ボンディングステージ４３の開口４３ｈから供給された不活性ガスは、基板１０１に吹き付けられる。この構成によれば、基板１０１の周囲に不活性ガス領域ＳＡを形成することが可能である。そして、基板１０１に吹き付けられた不活性ガスは、開口１０１ｈ，４４ｈを通過した後に、シャッタ板３１における開口３１ｈにおいて、その流れが絞られる。すなわち、不活性ガスは、開口３１ｈによってボンディングツール１０が有するキャピラリ６の先端に導出される。この構成によれば、キャピラリ６の先端に不活性ガス領域ＳＢを形成することが可能である。従って、キャピラリ６の先端におけるフリーエアボールの周囲に、不活性ガス領域ＳＡ，ＳＢを好適に形成できるので、フリーエアボールの酸化を抑制する能力が向上する。その結果、ワイヤボンディング装置１は、良好なボンディング品質を確保することができる。 The inert gas supplied from the opening 43 h of the bonding stage 43 is sprayed to the substrate 101. According to this configuration, it is possible to form the inert gas area SA around the substrate 101. Then, the inert gas sprayed onto the substrate 101 passes through the openings 101 h and 44 h, and then the flow is narrowed at the opening 31 h in the shutter plate 31. That is, the inert gas is led to the tip of the capillary 6 which the bonding tool 10 has by the opening 31 h. According to this configuration, it is possible to form the inert gas area SB at the tip of the capillary 6. Therefore, since the inert gas areas SA and SB can be suitably formed around the free air ball at the tip of the capillary 6, the ability to suppress the oxidation of the free air ball is improved. As a result, the wire bonding apparatus 1 can ensure good bonding quality.
　さらに、シャッタユニット３０を有しない比較例に係るワイヤボンディング装置２００と比較しつつ、本開示に係るワイヤボンディング装置１の作用効果について具体的に説明する。 Furthermore, the operation and effects of the wire bonding apparatus 1 according to the present disclosure will be specifically described in comparison with the wire bonding apparatus 200 according to the comparative example in which the shutter unit 30 is not provided.
　図１３は、比較例に係るワイヤボンディング装置２００において、左右方向Ｄ３に直交する面に沿ったフィーダユニット４０の断面を示す。矢印線は、不活性ガスが移動する様子を示す。 FIG. 13 shows a cross section of the feeder unit 40 along a plane orthogonal to the left-right direction D3 in the wire bonding apparatus 200 according to the comparative example. Arrow lines indicate the movement of the inert gas.
　図１３に示されるように、不活性ガスは、ガス供給穴４２ｈから上方に排出される。その結果、不活性ガスは、分配領域４３ｓに移動する。次に、不活性ガスは、複数の開口４３ｈを介して分配領域４３ｓから排出される。排出された不活性ガスは、基板１０１の開口１０１ｈ及びウインドクランパ４４の開口４４ｈを介してさらに上方へ排出される。ここで、比較例に係るワイヤボンディング装置２００では、右チャンバブロック１１Ｒ及び左チャンバブロック１１Ｌの下方に形成された開口４４ｈが覆われている。しかし、その他の開口４４ｈは全て開放されている。そうすると、開放された開口４４ｈからは不活性ガスが大気中に排出される。排出された不活性ガスは、再利用されない。 As shown in FIG. 13, the inert gas is discharged upward from the gas supply holes 42h. As a result, the inert gas moves to the distribution area 43s. Next, the inert gas is exhausted from the distribution area 43s through the plurality of openings 43h. The discharged inert gas is further discharged upward through the opening 101 h of the substrate 101 and the opening 44 h of the wind clamper 44. Here, in the wire bonding apparatus 200 according to the comparative example, an opening 44h formed below the right chamber block 11R and the left chamber block 11L is covered. However, all the other openings 44h are open. Then, the inert gas is discharged to the atmosphere from the opened opening 44h. The discharged inert gas is not reused.
　図１２に示すように、ワイヤボンディング装置１では、開口４４ｈの上方に隙間を挟んでシャッタユニット３０が配置されている。そうすると、開口４４ｈから排出された不活性ガスは、裏面３１ｂと主面４４ａとの間の隙間を介して、前後方向Ｄ２に移動する。そして、不活性ガスは、開口３１ｈに達すると、再び上方に向かって移動する。開口３１ｈの上方には、右チャンバブロック１１Ｒ及び左チャンバブロック１１Ｌに囲まれた不活性ガス領域ＳＢが形成されている。つまり、フィーダユニット４０から排出された不活性ガスは、シャッタユニット３０によって不活性ガス領域ＳＢに導かれる。 As shown in FIG. 12, in the wire bonding apparatus 1, the shutter unit 30 is disposed above the opening 44h with a gap therebetween. Then, the inert gas discharged from the opening 44h moves in the front-rear direction D2 through the gap between the back surface 31b and the main surface 44a. Then, when the inert gas reaches the opening 31 h, it moves upward again. An inert gas region SB surrounded by the right chamber block 11R and the left chamber block 11L is formed above the opening 31h. That is, the inert gas discharged from the feeder unit 40 is led to the inert gas region SB by the shutter unit 30.
　換言すると、本開示に係るワイヤボンディング装置１では、フィーダユニット４０における不活性ガスが２個の態様において利用される。不活性ガスは、半導体チップユニット１００の周囲における不活性ガス領域ＳＡ（第１不活性ガス領域）の形成に用いられる。その後、不活性ガスは、フリーエアボールの周囲における不活性ガス領域ＳＢの形成に用いられる。 In other words, in the wire bonding apparatus 1 according to the present disclosure, the inert gas in the feeder unit 40 is used in two modes. The inert gas is used to form an inert gas area SA (first inert gas area) around the semiconductor chip unit 100. Thereafter, an inert gas is used to form an inert gas area SB around the free air ball.
　不活性ガス領域ＳＢには、第１右ガス供給穴９Ｒａ、第２右ガス供給穴９Ｒｃ及び左ガス供給穴９Ｌａから不活性ガスが供給される。従って、不活性ガス領域ＳＢには、２箇所から不活性ガスが供給される。その結果、フリーエアボールの酸化を充分に抑制できる不活性領域を形成することができる。 An inert gas is supplied to the inert gas area SB from the first right gas supply hole 9Ra, the second right gas supply hole 9Rc, and the left gas supply hole 9La. Therefore, the inert gas is supplied from two places to the inert gas region SB. As a result, it is possible to form an inactive region capable of sufficiently suppressing the oxidation of the free air ball.
　上述した不活性ガスの誘導は、左右方向Ｄ３においても生じる。図９に示すように不活性ガスは、ガス受入管４２ｃから導入される。そして、不活性ガスは、ガス供給穴４２ｈから上方に排出される。次に、不活性ガスは、複数の開口４３ｈ、開口１０１ｈ及びウインドクランパ４４の開口４４ｈを介してさらに上方へ排出される。開口４４ｈは、左右方向Ｄ３に沿って複数設けられている。シャッタユニット３０は、作業対象となるワイヤ接続領域１０１ｃを露出させる開口４４ｈを除く他の開口４４ｈを塞ぐように配置されている。このような構成によると、開口４４ｈには、不活性ガスが留められる。その結果、不活性ガス領域ＳＡが形成される。そして、不活性ガスは、裏面３１ｂと主面４４ａとの間の隙間を介して、左右方向Ｄ３に移動する。次に、不活性ガスは、開口３１ｈに達した後に、再び上方に向かって移動し、不活性ガス領域ＳＢに導かれる。 The above-described induction of the inert gas also occurs in the left-right direction D3. As shown in FIG. 9, an inert gas is introduced from a gas receiving pipe 42c. Then, the inert gas is discharged upward from the gas supply hole 42 h. Next, the inert gas is discharged further upward through the plurality of openings 43 h, the opening 101 h and the opening 44 h of the wind clamper 44. A plurality of openings 44 h are provided along the left-right direction D3. The shutter unit 30 is disposed so as to close the other opening 44h except the opening 44h for exposing the wire connection area 101c to be operated. According to such a configuration, the inert gas is retained in the opening 44 h. As a result, an inert gas area SA is formed. Then, the inert gas moves in the left-right direction D3 via the gap between the back surface 31b and the main surface 44a. Next, after reaching the opening 31 h, the inert gas moves upward again and is led to the inert gas region SB.
　従って、本開示に係るワイヤボンディング装置１は、フィーダユニット４０に提供された不活性ガスを有効に利用することができる。そして、ワイヤボンディング装置１は、フリーエアボールのための不活性ガス領域ＳＢを形成するにあたり、右チャンバブロック１１Ｒ及び左チャンバブロック１１Ｌのガス供給部４２から供給される不活性ガスに加えて、さらに、フィーダユニット４０から誘導される不活性ガスを用いる。従って、ワイヤボンディング装置１は、ガス雰囲気の形成能力を向上させることが可能になる。その結果、ワイヤボンディング装置１は、所望の酸素濃度を有する不活性ガス領域ＳＢを形成することができる。ワイヤボンディング装置１は、良質のフリーエアボールを形成することが可能になる。従って、ワイヤボンディング装置１は、良好なボンディング品質を確保できる。 Therefore, the wire bonding apparatus 1 according to the present disclosure can effectively use the inert gas provided to the feeder unit 40. Then, in forming the inert gas region SB for the free air ball, the wire bonding apparatus 1 further adds to the inert gas supplied from the gas supply unit 42 of the right chamber block 11R and the left chamber block 11L, , An inert gas derived from the feeder unit 40 is used. Therefore, the wire bonding apparatus 1 can improve the ability to form a gas atmosphere. As a result, the wire bonding apparatus 1 can form an inert gas region SB having a desired oxygen concentration. The wire bonding apparatus 1 can form a free air ball of good quality. Therefore, the wire bonding apparatus 1 can ensure good bonding quality.
　シャッタ板３１は、キャピラリ６がワイヤ接続領域１０１ｃにワイヤを接続する際にキャピラリ６と共にウインドクランパ４４及び基板１０１に対して移動する。この構成によれば、複雑な機構を設けることなく、フィーダユニット４０から排出される不活性ガスを利用して不活性ガス領域ＳＡを形成することができる。 The shutter plate 31 moves relative to the window clamper 44 and the substrate 101 together with the capillary 6 when the capillary 6 connects a wire to the wire connection area 101 c. According to this configuration, the inert gas area SA can be formed using the inert gas discharged from the feeder unit 40 without providing a complicated mechanism.
　ボンディングツール１０は、キャピラリ６の先端が通過する通過孔１６ａを有するチャンバプレート１６と、キャピラリ６を囲むチャンバユニット４と、チャンバプレート１６及びチャンバユニット４で囲まれた領域に第２不活性ガスを供給する不活性ガス供給路と、をさらに有する。この構成によれば、不活性ガス領域ＳＡに加えて、不活性ガス領域ＳＢをさらに形成することができる。従って、ワイヤボンディング装置１は、フリーエアボールの酸化をさらに好適に抑制することができる。 The bonding tool 10 includes a chamber plate 16 having a passage hole 16a through which the tip of the capillary 6 passes, a chamber unit 4 surrounding the capillary 6, a second inert gas in a region surrounded by the chamber plate 16 and the chamber unit 4 And supplying an inert gas supply path. According to this configuration, in addition to the inert gas area SA, the inert gas area SB can be further formed. Therefore, the wire bonding apparatus 1 can more preferably suppress the oxidation of the free air ball.
　図４に示すように、開口４４ｈを通過した不活性ガスは、不活性ガス領域ＳＡを形成する。不活性ガス領域ＳＡは、通過孔１６ａを下方側に通過したキャピラリ６の先端が配置される空間である。不活性ガス供給路は、第１右ガス供給穴９Ｒａ、第２右ガス供給穴９Ｒｃ及び左ガス供給穴９Ｌａにより構成される。不活性ガス供給路から供給される不活性ガスは、不活性ガス領域ＳＢを形成する。不活性ガス領域ＳＢは、通過孔１６ａよりも上方に位置するキャピラリ６の先端が配置される空間である。 As shown in FIG. 4, the inert gas that has passed through the opening 44 h forms an inert gas area SA. The inert gas area SA is a space in which the tip of the capillary 6 which has passed through the passage hole 16a downward is disposed. The inert gas supply path is constituted by the first right gas supply hole 9Ra, the second right gas supply hole 9Rc, and the left gas supply hole 9La. The inert gas supplied from the inert gas supply path forms an inert gas region SB. The inert gas region SB is a space in which the tip of the capillary 6 located above the passage hole 16a is disposed.
　ここで、図４を参照しつつ、不活性ガス領域ＳＡ，ＳＢに注目する。不活性ガス領域ＳＡは、ワイヤ接続領域１０１ｃにおいてフリーエアボールを基板１０１にボンディングする際におけるフリーエアボール及び導電接続部の酸化を抑制する。一方、不活性ガス領域ＳＢは、キャピラリ６の先端に形成されるフリーエアボールの酸化を抑制する。不活性ガス領域ＳＡは、上下方向Ｄ１に沿って、不活性ガス領域ＳＢの下側に形成される。不活性ガス領域ＳＡ及び不活性ガス領域ＳＢのしきいは、例えば、チャンバプレート１６としてもよい。つまり、チャンバプレート１６より下側に形成される不活性領域は、不活性ガス領域ＳＡである。チャンバプレート１６より上側に形成される不活性領域は、不活性ガス領域ＳＢである。 Here, the inert gas regions SA and SB are focused on with reference to FIG. The inert gas area SA suppresses oxidation of the free air ball and the conductive connection when bonding the free air ball to the substrate 101 in the wire connection area 101c. On the other hand, the inert gas area SB suppresses the oxidation of the free air ball formed at the tip of the capillary 6. The inert gas area SA is formed below the inert gas area SB along the vertical direction D1. The thresholds of the inert gas area SA and the inert gas area SB may be, for example, the chamber plate 16. That is, the inactive area formed below the chamber plate 16 is the inert gas area SA. The inactive area formed above the chamber plate 16 is an inert gas area SB.
　チャンバユニット４は、右チャンバブロック１１Ｒと、右チャンバブロック１１Ｒとは別体の左チャンバブロック１１Ｌと、右チャンバブロック１１Ｒをキャピラリ６に対して相対的に移動させる可動機構１５と、を含む。可動機構１５は、右チャンバブロック１１Ｒ及び右チャンバブロック１１Ｒによってキャピラリ６の周囲を囲む第１形態と、右チャンバブロック１１Ｒを移動させることにより、キャピラリ６の周囲の一部を開放する第２形態と、を相互に切り替える。 The chamber unit 4 includes a right chamber block 11R, a left chamber block 11L separate from the right chamber block 11R, and a movable mechanism 15 for moving the right chamber block 11R relative to the capillary 6. The movable mechanism 15 has a first form in which the periphery of the capillary 6 is surrounded by the right chamber block 11R and the right chamber block 11R, and a second form in which a part of the periphery of the capillary 6 is opened by moving the right chamber block 11R. , Switch between each other.
　上記の構成によれば、可動機構１５は、左チャンバブロック１１Ｌを移動させることにより、開放形態から閉鎖形態に切り替わる。閉鎖形態では、キャピラリ６の周囲が左チャンバブロック１１Ｌ及び右チャンバブロック１１Ｒによって囲まれる。従って、キャピラリ６の周囲に不活性ガスを滞留させることが可能になる。その結果、フリーエアボールの酸化を抑制することができる。そして、可動機構１５は、左チャンバブロック１１Ｌを逆の方向へ移動させる。その結果、閉鎖形態から開放形態に切り替わる。開放形態は、キャピラリ６の周囲の一部が開放されている。従って、ワイヤボンディング装置１は、作業スペースＳ２を確保することが可能である。従って、ワイヤボンディング装置１は、ワイヤボンディングの作業性を向上させることができる。これにより、ワイヤボンディング装置１は、良好なボンディング品質の確保と作業性の向上とを両立することができる。 According to the above configuration, the movable mechanism 15 switches from the open mode to the closed mode by moving the left chamber block 11L. In the closed mode, the capillary 6 is surrounded by the left chamber block 11L and the right chamber block 11R. Accordingly, the inert gas can be retained around the capillary 6. As a result, oxidation of free air balls can be suppressed. Then, the movable mechanism 15 moves the left chamber block 11L in the opposite direction. As a result, the closed mode is switched to the open mode. In the open mode, a part of the periphery of the capillary 6 is open. Therefore, the wire bonding apparatus 1 can secure the work space S2. Therefore, the wire bonding apparatus 1 can improve the workability of wire bonding. As a result, the wire bonding apparatus 1 can ensure both good bonding quality and improvement in workability.
　本開示に係るワイヤボンディング装置１は、右チャンバブロック１１Ｒを移動させる可動機構１５を含む。シャッタユニット３０は、右チャンバブロック１１Ｒのブロック下面１１Ｌｂと対面するブロック対面部３１ｃを含む。この構成によれば、ブロック対面部３１ｃが開口４４ｈを覆う。すなわち、シャッタ板３１において開口４４ｈを覆う面積が大きくなる。従って、ワイヤボンディング装置１は、フィーダユニット４０から排出される不活性ガスを効率よく不活性ガス領域ＳＢに誘導できる。 The wire bonding apparatus 1 according to the present disclosure includes a movable mechanism 15 that moves the right chamber block 11R. The shutter unit 30 includes a block facing portion 31c facing the block lower surface 11Lb of the right chamber block 11R. According to this configuration, the block facing portion 31c covers the opening 44h. That is, the area of the shutter plate 31 covering the opening 44 h is increased. Therefore, the wire bonding apparatus 1 can efficiently guide the inert gas discharged from the feeder unit 40 to the inert gas area SB.
　本開示に係るワイヤボンディング装置１のチャンバユニット４は、キャピラリ６に対する左チャンバブロック１１Ｌの相対的な位置を保持する左アーム８Ｌをさらに有する。そして、シャッタユニット３０は、左チャンバブロック１１Ｌのブロック下面１１Ｌｂ及びチャンバプレート１６を受け入れる開口３１ｈを含む。この構成によれば、開口３１ｈが大きくなる。その結果、シャッタ板３１を軽量化することができる。そして、軽量化されたシャッタ板３１によれば、質量に起因する慣性力が小さくなる。従って、ボンディングツール１０の高速動作を妨げない。さらに、シャッタ板３１に覆われない開口４４ｈは、開口３１ｈに受け入れられた左チャンバブロック１１Ｌ等によって覆われる。すなわち、シャッタ板３１の機能を左チャンバブロック１１Ｌが代替することが可能である。従って、ワイヤボンディング装置１は、フィーダユニット４０から排出される不活性ガスを効率よく不活性ガス領域ＳＢに誘導できる。 The chamber unit 4 of the wire bonding apparatus 1 according to the present disclosure further includes a left arm 8L that holds the relative position of the left chamber block 11L to the capillary 6. The shutter unit 30 further includes an opening 31 h for receiving the lower surface 11 Lb of the left chamber block 11 L and the chamber plate 16. According to this configuration, the opening 31 h becomes large. As a result, the shutter plate 31 can be reduced in weight. And, according to the shutter plate 31 which is reduced in weight, the inertial force caused by the mass is reduced. Therefore, the high speed operation of the bonding tool 10 is not impeded. Further, the opening 44h not covered by the shutter plate 31 is covered by the left chamber block 11L or the like received in the opening 31h. That is, the left chamber block 11L can substitute the function of the shutter plate 31. Therefore, the wire bonding apparatus 1 can efficiently guide the inert gas discharged from the feeder unit 40 to the inert gas area SB.
　以上、本開示に係るワイヤボンディング装置をその実施形態に基づいて詳細に説明した。しかし、本開示に係るワイヤボンディング装置は上記実施形態に限定されるものではない。本開示に係るワイヤボンディング装置は、その要旨を逸脱しない範囲で様々な変形が可能である。 Hereinabove, the wire bonding apparatus according to the present disclosure has been described in detail based on the embodiment. However, the wire bonding apparatus according to the present disclosure is not limited to the above embodiment. The wire bonding apparatus according to the present disclosure can be variously modified without departing from the scope of the invention.
　左チャンバブロック１１Ｌを固定し、右チャンバブロック１１Ｒを可動させる構成とした。例えば、右チャンバブロック１１Ｒに加えて、さらに左チャンバブロック１１Ｌを第２可動部（第２機構）によって稼働させてもよい。シャッタユニット３０は、左チャンバブロック１１Ｌのブロック下面１１Ｌｂと対面するブロック対面部３１ｄ（第２対面部）をさらに含む。つまり、開口３１ｈがさらに縮小される。その結果、フィーダユニット４０から排出される不活性ガスをさらに効率よく不活性ガス領域ＳＢに誘導できる。 The left chamber block 11L is fixed, and the right chamber block 11R is moved. For example, in addition to the right chamber block 11R, the left chamber block 11L may be operated by the second movable portion (second mechanism). The shutter unit 30 further includes a block facing portion 31d (second facing portion) facing the block lower surface 11Lb of the left chamber block 11L. That is, the opening 31 h is further reduced. As a result, the inert gas discharged from the feeder unit 40 can be more efficiently guided to the inert gas region SB.
　左チャンバブロック１１Ｌ及び右チャンバブロック１１Ｒの両方にガス供給部９を設けた。例えば、左チャンバブロック１１Ｌ及び右チャンバブロック１１Ｒのいずれか一方にのみガス供給部９を設けてもよい。 The gas supply part 9 was provided in both the left chamber block 11L and the right chamber block 11R. For example, the gas supply unit 9 may be provided only in one of the left chamber block 11L and the right chamber block 11R.
　右チャンバブロック１１Ｒの第２位置を、キャピラリ６に対して右斜め上方であってさらに後方とした。右チャンバブロック１１Ｒの第２位置は、キャピラリ６及びキャピラリアーム７の先端の一部を開放可能な位置であれば、この配置に限定されない。 The second position of the right chamber block 11 </ b> R is obliquely above the right with respect to the capillary 6 and further rearward. The second position of the right chamber block 11R is not limited to this arrangement as long as the capillary 6 and a part of the tip of the capillary arm 7 can be opened.
１，２００…ワイヤボンディング装置、２…ベースユニット、３…キャピラリユニット、４…チャンバユニット、４Ｌ…左チャンバユニット、４Ｒ…右チャンバユニット、６…キャピラリ、７…キャピラリアーム、７ａ…左側面、７ｂ…右側面、７ｃ…前端面、７ｄ…底面、８Ｌ…左アーム、８Ｒ…右アーム、９…ガス供給部、９Ｌ…左ガス供給部、９Ｌａ…左ガス供給穴、９Ｌｂ…左ガス供給管、９Ｒ…右ガス供給部、９Ｒａ…第１右ガス供給穴、９Ｒｃ…第２右ガス供給穴、１０…ボンディングツール、１１…チャンバ、１１Ｌ…左チャンバブロック、１１Ｌａ…先端、１１Ｌｂ…ブロック下面、１１Ｒ…右チャンバブロック、１１Ｒｂ…ブロック下面、１２…固定アーム、１２ａ…連結穴、１３…可動アーム、１３ａ…基端、１３ｂ…先端、１３ｈ…挿通穴、１４…ボルト、１４ａ…軸部、１４ｂ…ヘッド、１５…可動機構、１６…チャンバプレート、１６ａ…通過孔、１６ｃ…プレート下面、１７…ラッチ機構、１８…第１吸着部、１９…第２吸着部、２０…不活性ガス領域形成部、２１…第１緩衝部、２２…第２緩衝部、３０…シャッタユニット、３１…シャッタ板、３１ａ…主面、３１ｂ…裏面、３１ｃ，３１ｄ…ブロック対面部、３１ｈ，４１ｈ，４３ｈ，４４ｈ，１０１ｈ…開口、３２Ｒ…右連結部、３２Ｌ…左連結部、３２ａ…キャピラリ導入穴部、３２ｂ…ブロック導入穴部、４０…フィーダユニット、４１…ハウジング、４１ａ…ハウジング上板、４１ｂ…ハウジング下板、４２…ガス供給部、４２ｃ…ガス受入管、４２ａ…主面、４２ｂ…裏面、４２ｈ…ガス供給穴、４３…ボンディングステージ、４３ａ…主面、４３ｂ…裏面、４３ｓ…分配領域、４４…ウインドクランパ、４４ａ…主面、４４ｂ…裏面、４４ｃ…クランプ部、１００…半導体チップユニット、１０１…基板、１０１ａ…主面、１０１ｂ…裏面、Ａ１，Ａ２，Ａ３，Ａ４，ＡＲ…軸線、Ｄ１…上下方向、Ｄ２…前後方向、Ｄ３…左右方向、Ｍ１…第１磁石、Ｍ２…第２磁石、Ｍ３…第３磁石、Ｍ４…第４磁石、Ｍ５…第５磁石、Ｍ６…第６磁石、Ｐ１…第１包囲面、Ｐ２…第２包囲面、Ｐ２ａ…右包囲面、Ｐ２ｂ…左包囲面、Ｐ３…第３包囲面、ＳＡ，ＳＢ…不活性ガス領域、Ｓ２…作業スペース。 1, 200: wire bonding apparatus, 2: base unit, 3: capillary unit, 4: chamber unit, 4L: left chamber unit, 4R: right chamber unit, 6: capillary, 7: capillary arm, 7a, left side, 7b ... right side surface, 7c ... front end surface, 7d ... bottom surface, 8L ... left arm, 8R ... right arm, 9 ... gas supply unit, 9L ... left gas supply unit, 9La ... left gas supply hole, 9Lb ... left gas supply pipe, 9R: right gas supply unit, 9Ra: first right gas supply hole, 9Rc: second right gas supply hole, 10: bonding tool, 11: chamber, 11L: left chamber block, 11La: tip, 11Lb: block lower surface, 11R ... right chamber block, 11 Rb ... block lower surface, 12 ... fixed arm, 12 a ... connection hole, 13 ... movable arm, 13 a ... proximal end, 13 b ... End, 13h: Insertion hole, 14: Bolt, 14a: Shaft portion, 14b: Head, 15: Movable mechanism, 16: Chamber plate, 16a: Passage hole, 16c: Plate lower surface, 17: Latch mechanism, 18: First adsorption 19: second adsorption unit 20: inert gas area formation unit 21: first buffer unit 22: second buffer unit 30: shutter unit 31: shutter plate 31a: main surface 31b: back surface 31c, 31d: block facing portion, 31h, 41h, 43h, 44h, 101h: opening, 32R: right connecting portion, 32L: left connecting portion, 32a: capillary introduction hole portion, 32b: block introduction hole portion, 40: feeder Unit 41 housing 41a housing upper plate 41b housing lower plate 42 gas supply part 42c gas receiving pipe 42a main surface 42b rear surface 42h 43: A bonding stage 43a: a principal surface 43b: a back surface 43s: a distribution area 44: a window clamper 44a: a principal surface 44b: a back surface 44c: a clamping portion 100: a semiconductor chip unit 101 Substrate, 101a: principal surface, 101b: back surface, A1, A2, A3, A4, AR: axis, D1: up and down direction, D2: front and back direction, D3: left and right direction, M1: first magnet, M2: second magnet, M3 third magnet M4 fourth magnet M5 fifth magnet M6 sixth magnet P1 first surrounding surface P2 second surrounding surface P2a right surrounding surface P2b left surrounding surface P3 ... third surrounding surface, SA, SB ... inert gas region, S2 ... work space.

Claims (5)

  1. 　ワイヤ接続領域に第１開口部を有する基板を支持し、前記基板に第１不活性ガスを吹き付ける第２開口部を有するボンディングステージと、
    　前記基板の前記ワイヤ接続領域に対応して開口する複数の第３開口部を有し、前記基板を前記ボンディングステージに固定するウインドクランパと、
    　前記ワイヤ接続領域にワイヤを圧着するキャピラリを有する上部ボンディング機構と、
    　前記ウインドクランパの上方に配置され、前記キャピラリが通過すると共に、前記第１開口部、前記第２開口部及び前記第３開口部を通過した前記第１不活性ガスの流路を絞り前記キャピラリの先端に前記第１不活性ガスを導出する第４開口部を有するシャッタと、を備える、ワイヤボンディング装置。     A bonding stage supporting a substrate having a first opening in a wire connection area and having a second opening for blowing a first inert gas onto the substrate;
    A window clamper having a plurality of third openings opened corresponding to the wire connection area of the substrate, and fixing the substrate to the bonding stage;
    An upper bonding mechanism having a capillary for crimping a wire to the wire connection area;
    The capillary is disposed above the window clamper, and the passage of the first inert gas passing through the first opening, the second opening, and the third opening is narrowed while passing through the capillary. A shutter having a fourth opening at a tip end for leading out the first inert gas.
  2. 　前記シャッタは、前記キャピラリが前記ワイヤ接続領域に前記ワイヤを接続する際に前記キャピラリと共に前記ウインドクランパ及び前記基板に対して移動する、請求項１に記載のワイヤボンディング装置。 The wire bonding apparatus according to claim 1, wherein the shutter moves relative to the window clamper and the substrate together with the capillary when the capillary connects the wire to the wire connection area.
  3. 　前記上部ボンディング機構は、前記キャピラリの先端が通過する通過孔を有する板部材と、前記キャピラリを囲むチャンバ部材と、前記板部材及び前記チャンバ部材で囲まれた領域に第２不活性ガスを供給する不活性ガス供給路と、をさらに有する、請求項１又は２に記載のワイヤボンディング装置。 The upper bonding mechanism supplies a second inert gas to a plate member having a passage hole through which the tip of the capillary passes, a chamber member surrounding the capillary, and a region surrounded by the plate member and the chamber member. The wire bonding apparatus according to claim 1, further comprising: an inert gas supply path.
  4. 　前記第４開口部を通過した前記第１不活性ガスは、前記通過孔を下方側に通過した前記キャピラリの先端の雰囲気となる第１不活性ガス領域を形成し、
    　前記不活性ガス供給路から供給される第２不活性ガスは、前記通過孔よりも上方に位置する前記キャピラリの先端の雰囲気となる第２不活性ガス領域を形成する、請求項３に記載のワイヤボンディング装置。     The first inert gas that has passed through the fourth opening forms a first inert gas region that is the atmosphere of the tip of the capillary that has passed downward through the passage hole,
    The second inert gas supplied from the inert gas supply passage forms a second inert gas region which is an atmosphere of the tip of the capillary located above the passage hole. Wire bonding equipment.
  5. 　前記チャンバ部材は、第１チャンバブロックと、前記第１チャンバブロックとは別体の第２チャンバブロックと、前記第１チャンバブロック及び前記第２チャンバブロックの一方を前記キャピラリに対して相対的に移動させる可動部と、を含み、
    　前記可動部は、前記第１チャンバブロック及び前記第２チャンバブロックによって前記キャピラリの周囲を囲む第１形態と、前記第１チャンバブロック及び前記第２チャンバブロックの少なくとも一方を移動させることにより、前記キャピラリの周囲の一部を開放する第２形態と、を相互に切り替える、請求項３に記載のワイヤボンディング装置。
          The chamber member moves the first chamber block, a second chamber block separate from the first chamber block, and one of the first chamber block and the second chamber block relative to the capillary. Moving parts, and
    The movable portion moves the capillary by moving at least one of a first form in which the periphery of the capillary is surrounded by the first chamber block and the second chamber block, and at least one of the first chamber block and the second chamber block. The wire bonding apparatus according to claim 3, wherein the second form in which a part of the periphery of the opening is opened is switched with each other.
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JPH06275673A (en) * 1993-03-23 1994-09-30 Rohm Co Ltd Device and method for wire bonding
JP2008034811A (en) * 2006-07-03 2008-02-14 Shinkawa Ltd Ball forming device in wire bonding device, and bonding device
US20080099531A1 (en) * 2006-10-30 2008-05-01 Yam Mo Wong Apparatus for delivering shielding gas during wire bonding
JP2009059878A (en) * 2007-08-31 2009-03-19 Shinkawa Ltd Bonding equipment and bonding method
JP2012504317A (en) * 2008-06-10 2012-02-16 クリック アンド ソッファ インダストリーズ、インク． Gas delivery system for reducing oxidation in wire bonding operations
JP2012039157A (en) * 2011-11-18 2012-02-23 Kaijo Corp Wire bonding device
JP2013058716A (en) * 2011-08-16 2013-03-28 Shinkawa Ltd Wire bonding apparatus
JP2016134478A (en) * 2015-01-19 2016-07-25 株式会社新川 Bonding device and bonding method

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Publication number Priority date Publication date Assignee Title
JPH06275673A (en) * 1993-03-23 1994-09-30 Rohm Co Ltd Device and method for wire bonding
JP2008034811A (en) * 2006-07-03 2008-02-14 Shinkawa Ltd Ball forming device in wire bonding device, and bonding device
US20080099531A1 (en) * 2006-10-30 2008-05-01 Yam Mo Wong Apparatus for delivering shielding gas during wire bonding
JP2009059878A (en) * 2007-08-31 2009-03-19 Shinkawa Ltd Bonding equipment and bonding method
JP2012504317A (en) * 2008-06-10 2012-02-16 クリック アンド ソッファ インダストリーズ、インク． Gas delivery system for reducing oxidation in wire bonding operations
JP2013058716A (en) * 2011-08-16 2013-03-28 Shinkawa Ltd Wire bonding apparatus
JP2012039157A (en) * 2011-11-18 2012-02-23 Kaijo Corp Wire bonding device
JP2016134478A (en) * 2015-01-19 2016-07-25 株式会社新川 Bonding device and bonding method

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