TWI681477B - Wire bonding device - Google Patents

Abstract

The object of the present invention is to improve the ability to suppress the oxidation of airless solder balls and to ensure good bonding quality. The wire bonding apparatus 1 of the present invention includes: a bonding platform 43 that supports a substrate 101 having an opening 101h in the wire bonding area 101c, and an opening 43h for blowing an inert gas on the substrate 101; a pneumatic gripper 44 having a substrate 101 A plurality of openings 44h corresponding to the wire bonding connection area 101c, and fixes the substrate 101 to the bonding platform 43; the bonding tool 10 has a capillary tube 6 for crimping the wire bonding to the wire bonding connection area 101c; and the shutter 31 is arranged at Above the pneumatic gripper 44, the capillary 6 is passed, and it has an opening 31h that narrows the flow path of the inert gas passing through the openings 101h, 43h, and 44h and leads the inert gas toward the front end of the capillary 6.

Description

Wire bonding device

The invention relates to a wire bonding device.

When bonding wires to the electrodes of the semiconductor wafer, ball bonding is performed. In ball bonding, the tip of the wire sticking out from the tip of the capillary is melted to form a free air ball. Then, press the airless solder ball on the electrode. Since airless solder balls are molten metal, they are relatively easy to oxidize. Oxidation of airless solder balls can cause poor connection to electrodes.

[Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2007-294975

[Patent Document 2] US Patent Application Publication No. 2007/0251980 specification

[Patent Document 3] Japanese Patent Laid-Open No. 5-235080

Patent Documents 1 to 3 disclose a technique of supplying an inert gas to a region where air-free solder balls are formed to suppress oxidation of air-free solder balls. The technique disclosed in Patent Documents 1 and 2 is to arrange the discharge port of the gas supply pipe near the front end of the capillary tube, and to supply the cover gas from the discharge port toward the ball. The technology disclosed in Patent Document 3 is to make the supply Oxidation inhibiting gas such as nitrogen to the closed feeder is ejected toward the capillary tool.

In the above-mentioned technical field, an air-free solder ball oxidation suppression technology using inert gas is known (Patent Documents 1 to 3), but it is expected that the oxidation suppression ability is further improved.

Therefore, the present invention provides a wire bonding apparatus capable of improving the ability to suppress the oxidation of airless solder balls and further ensuring good bonding quality.

A method of the present invention includes: a bonding stage that supports a substrate having a first opening in a wire bonding area, and a second opening that sprays a first inert gas on the substrate; a pneumatic gripper (wind clamper) having a plurality of third openings that open corresponding to the wire bonding area of the substrate and fix the substrate to the bonding platform; the upper bonding mechanism has a capillary for crimping the wire bonding to the wire bonding area; and A shutter is arranged above the pneumatic gripper, through which the capillary passes, and has a flow path for the first inert gas passing through the first opening, the second opening, and the third opening to narrow and reduce The fourth opening where the first inert gas is led out toward the tip of the capillary.

The first inert gas supplied from the second opening of the bonding stage is blown onto the substrate. According to this configuration, an inert gas region can be formed around the substrate. Then, after the first inert gas blown onto the substrate passes through the first opening and the third opening, the flow is narrowed in the fourth opening of the gate. That is, the first inert gas is led out to the tip of the capillary included in the upper bonding mechanism through the fourth opening. According to this configuration, an inert gas region can be formed at the tip of the capillary. Therefore, since the capillary An inert gas region is preferably formed around the air-free solder ball at the tip of the, so that the ability to suppress the oxidation of the air-free solder ball can be improved, and a good bonding quality can be ensured.

According to the present invention, the ability to suppress the oxidation of airless solder balls can be improved, and further, good bonding quality can be ensured.

1, 200‧‧‧ wire bonding device

2‧‧‧Base unit

3‧‧‧Capillary unit

4‧‧‧Chamber unit

4L‧‧‧Left chamber unit

4R‧‧‧Right chamber unit

6‧‧‧Capillary

7‧‧‧Capillary arm

7a‧‧‧Left side

7b‧‧‧right side

7c‧‧‧Front face

7d‧‧‧Bottom

8L‧‧‧Left arm

8R‧‧‧right arm

9‧‧‧Gas Supply Department

9L‧‧‧Left gas supply unit

9La‧‧‧Left gas supply hole

9Lb‧‧‧Left gas supply pipe

9R‧‧‧Right gas supply unit

9Ra‧‧‧First right gas supply hole

9Rb, 9Rd‧‧‧trachea

9Rc‧‧‧ 2nd right gas supply hole

10‧‧‧bonding tool

11‧‧‧ chamber

11L‧‧‧Left chamber block

11La‧‧‧Front end

11Lb‧‧‧block lower surface

11R‧‧‧Right chamber block

11Rb‧‧‧block lower surface

11s‧‧‧chamber flange

12‧‧‧fixed arm

12a‧‧‧Link hole

13‧‧‧movable arm

13a‧‧‧End

13b‧‧‧Front end

13h‧‧‧Plug through hole

14‧‧‧bolt

14a‧‧‧Shaft

14b‧‧‧Head

15‧‧‧ Activity organization

16‧‧‧Chamber plate

16a‧‧‧Through hole

16c‧‧‧Board lower surface

17‧‧‧Latch mechanism

18‧‧‧The first adsorption section

19‧‧‧The second adsorption unit

20‧‧‧Inert gas area formation department

21‧‧‧First buffer

22‧‧‧The second buffer

30‧‧‧Brake unit

31‧‧‧Shutter

31a‧‧‧Main

31b‧‧‧Back

31c‧‧‧block to face

31h, 41h, 43h, 44h, 101h

32a‧‧‧Capillary introduction hole

32b‧‧‧Block introduction hole

32L‧‧‧Left Link

32R‧‧‧Right link

40‧‧‧Feeder unit

41‧‧‧Housing

41a‧‧‧Housing upper plate

41b‧‧‧Housing lower plate

42‧‧‧Gas Supply Department

42a‧‧‧Main

42b‧‧‧Back

42c‧‧‧Gas receiving tube

42h‧‧‧gas supply hole

43‧‧‧joining platform

43a‧‧‧Main

43b‧‧‧Back

43s‧‧‧Allocation area

44‧‧‧Pneumatic gripper

44a‧‧‧Main

44b‧‧‧Back

44c‧‧‧Clamping Department

100‧‧‧Semiconductor chip unit

101‧‧‧ substrate

101a‧‧‧Main

101b‧‧‧Back

101c‧‧‧Wire connection area

A1, A2, A3, A4, AR ‧‧‧ axis

D1‧‧‧Up and down direction

D2‧‧‧Fore and aft direction

D3‧‧‧direction

M1‧‧‧First magnet

M2‧‧‧ 2nd magnet

M3‧‧‧The third magnet

M4‧‧‧ 4th magnet

M5‧‧‧ 5th magnet

M6‧‧‧ 6th magnet

P1‧‧‧The first surrounding surface

P2‧‧‧The second surrounding surface

P2a‧‧‧Right surround

P2b‧‧‧Enclosure

P3‧‧‧The third surrounding surface

S2‧‧‧Working space

SA, SB‧‧‧ inert gas area

FIG. 1 is a perspective view showing a first form of the wire bonding apparatus of the present embodiment.

2 is a perspective view showing the movable arm exploded.

FIG. 3 is a plan view showing a left chamber block and a right chamber block.

4 is a front view showing the left chamber block and the right chamber block.

5 is a perspective view showing an inert gas region.

6 is a perspective view showing a second form of the wire bonding apparatus.

7 is a side view showing a second form of the wire bonding apparatus.

8 is an enlarged cross-sectional perspective view showing the configuration of the feeder unit.

9 is a cross-sectional view of a feeder unit and a gate unit showing the flow of inert gas.

FIG. 10 is a perspective view showing the vicinity of the gate opening of the gate unit enlarged.

11 is a diagram showing a cross section of a shutter.

12 is another cross-sectional view of the feeder unit and the gate unit showing the flow of inert gas.

13 is a feeder unit and gate showing a comparative example of the flow of inert gas Yuan's cross-sectional view.

Hereinafter, the method for implementing the present invention will be described in detail while referring to the accompanying drawings. In the description of the drawings, the same symbols are given to the same members, and repeated explanations are omitted.

The wire bonding apparatus 1 shown in FIG. 1 is for bonding wires to electrodes on a semiconductor wafer or a substrate. The wire bonding apparatus 1 includes a base unit 2 (base part), a capillary unit 3 (capillary part), and a chamber unit (Chamber unit) 4 (chamber member). The base unit 2, the capillary unit 3, and the chamber unit 4 constitute a bonding tool 10 (upper bonding mechanism). In addition, the wire bonding apparatus 1 has other components such as a housing and a control device, but these components are omitted in the following description and drawings.

After the wire bonding apparatus 1 holds the wire so as to protrude slightly from the capillary unit 3, a free air ball (Free Air Ball) is formed at the tip of the protruding wire. Next, the wire bonding apparatus 1 performs ball bonding. Specifically, the capillary unit 3 presses the airless solder balls against the electrodes of the semiconductor wafer. By this action, the bonding wire is joined to the electrode.

Here, when performing ball bonding, as described above, an airless solder ball is formed at the tip of the wire bonding. Since the airless solder ball is, for example, molten copper, it is easily oxidized. Therefore, the wire bonding apparatus 1 adopts a closed form (first form) as shown in FIG. 1, and the chamber unit 4 forms an inert gas area SB (second inert gas area) that is an area that suppresses the oxidation of airless solder balls. . 4 pairs of chamber units An inert gas (for example, nitrogen) is blown into the area of the gas solder ball to form an inert gas area SB (refer to FIGS. 1, 4, and 5 ). Furthermore, the chamber unit 4 physically surrounds the area where the inert gas is sprayed. Therefore, since the inert gas is retained in the enclosed area, the good inert gas area SB can be maintained.

Hereinafter, a specific configuration of the wire bonding apparatus 1 will be described. When describing the wire bonding apparatus 1, for convenience of description, the up-down direction D1, the front-rear direction D2, and the left-right direction D3 are used. These directions are relative directions viewed from an operator who operates the wire bonding apparatus 1. For example, the vertical direction D1 may also be referred to as the direction along the vertical direction or the extending direction of the capillary 6 described later. The front-rear direction D2 is the direction from the wire bonding apparatus 1 toward the operator, with the operator's side as "front" and the device side as "rear". The left-right direction D3 can also be said to be a direction orthogonal to the up-down direction D1 and the front-rear direction D2. In addition, "right" and "left" mentioned here are for convenience of explanation. The "right" and "left" correspond to the "right" and "left" when the worker standing on the front of the wire bonding apparatus 1 observes.

The base unit 2 is a base that supports the capillary unit 3 and the chamber unit 4. During the operation of the wire bonding apparatus 1, the base unit 2 maintains a predetermined position. The capillary unit 3 and the chamber unit 4 are arranged to be movable relative to the base unit 2. For example, the capillary unit 3 reciprocates in the vertical direction D1.

The capillary unit 3 has a capillary 6 and a capillary arm 7. The capillary 6 bonds the wires to the electrodes of the semiconductor wafer. The capillary 6 is a cylindrical member extending in the vertical direction D1. The upper end of the capillary 6 is detachably held on the capillary arm 7. The capillary 6 has a through hole extending from the upper end side to the lower end side, and the capillary 6 The lower end of the is provided with an opening. A wire is inserted into the through hole. The capillary 6 has a structure not shown, and switches between the state of holding the wire and the state of releasing the wire. The capillary arm 7 connects the capillary 6 to the base unit 2. The capillary arm 7 is a cantilever beam extending in the front-rear direction D2. The rear end of the capillary arm 7 is connected to the base unit 2 so as to reciprocate in the vertical direction D1. The front end of the capillary arm 7 detachably holds the upper end of the capillary 6.

The chamber unit 4 has a left chamber unit 4L and a right chamber unit 4R. One of the left chamber unit 4L and the right chamber unit 4R is relatively movable relative to the other. Specifically, the left chamber unit 4L is fixed to the base unit 2. That is, the left chamber unit 4L does not move at all. On the other hand, the right chamber unit 4R is relatively movable with respect to the base unit 2. In other words, the right chamber unit 4R is relatively movable with respect to the left chamber unit 4L fixed to the base unit 2.

The left chamber unit 4L includes a left arm 8L (holding section), a left gas supply section 9L (see FIG. 3 and the like), and a left chamber block 11L (second chamber block). The base end side of the left arm 8L is fixed to the base unit 2. The left chamber block 11L is fixed to the front end side of the left arm 8L.

The right chamber unit 4R has a right arm 8R, a right gas supply portion 9R, and a right chamber block 11R (first chamber block). In the present embodiment, the left chamber block 11L and the right chamber block 11R constitute the chamber 11 (chamber member). Therefore, the left chamber block 11L and the right chamber block 11R are independent individuals. Moreover, the left gas supply part 9L and the right gas supply part 9R comprise the gas supply part 9 (inert gas supply path).

The base end side of the right arm 8R is fixed to the base unit 2. In front of the right arm 8R The right chamber block 11R is fixed on the end side. The right arm 8R has a fixed arm 12 and a movable arm 13. The base end of the fixed arm 12 is fixed to the base unit 2. A movable arm 13 is connected to the fixed arm 12. The movable arm 13 has an L-shape. The base end 13a of the movable arm 13 is rotatably connected to the fixed arm 12. The right chamber block 11R is fixed to the front end 13b of the movable arm 13. That is, when the movable arm 13 rotates with respect to the fixed arm 12, the right chamber block 11R moves relative to the left chamber block 11L.

As shown in FIG. 2, the movable arm 13 is connected to the fixed arm 12 by bolts 14. The shaft portion 14a of the bolt 14 is inserted into the insertion hole 13h of the movable arm 13. Furthermore, the tip of the shaft portion 14a is screwed into the coupling hole 12a of the fixed arm 12. Then, the movable arm 13 is sandwiched between the head 14b of the bolt 14 and the fixed arm 12. The diameter of the shaft portion 14a is slightly smaller than the inner diameter of the insertion hole 13h, so the movable arm 13 can be smoothly rotated relative to the bolt 14. These connecting hole 12a, insertion hole 13h, and bolt 14 constitute a movable mechanism 15 (movable portion).

Furthermore, the right chamber unit 4R may have a latch mechanism 17 as needed. The latch mechanism 17 maintains the position of the movable arm 13. Specifically, the position of the right chamber block 11R in the closed form (first form, see FIG. 1) is maintained, and the position of the right chamber block 11R in the open form (second form, see FIG. 6) is maintained. . The latch mechanism 17 has a first suction portion 18 and a second suction portion 19.

The first attraction portion 18 has a first magnet M1 and a second magnet M2. When the wire bonding apparatus 1 is in the closed form, the first suction portion 18 maintains the position of the right chamber block 11R. That is, the first suction portion 18 maintains the position of the movable arm 13 relative to the fixed arm 12. The maintenance is based on the attractive force between the first magnet M1 and the second magnet M2 get on. Therefore, when a force greater than the attractive force in the opposite direction is applied to the movable arm 13, the state of maintaining the position of the right chamber block 11R is released.

The second suction portion 19 has a first magnet M1 and a third magnet M3. When the wire bonding apparatus 1 is in an open form, the second suction portion 19 maintains the position of the right chamber block 11R. That is, the second suction portion 19 maintains the position of the movable arm 13 relative to the fixed arm 12. The maintenance is performed based on the attractive force between the first magnet M1 and the third magnet M3. Therefore, when a force greater than the attractive force in the opposite direction is applied to the movable arm 13, the state of maintaining the position of the right chamber block 11R is released.

When the wire bonding apparatus 1 is actuated, each component on the wire bonding apparatus 1 will mechanically operate. According to the first suction portion 18, it is possible to suppress the position of the right chamber block 11R from shifting due to vibration or the like caused by the operation of these parts. Therefore, during the period when the wire bonding apparatus 1 is actuated, the inert gas region SB can be preferably maintained.

Furthermore, according to the second suction portion 19, when the operator replaces the capillary 6, the position of the right chamber block 11R can be maintained. For example, even when the operator touches the movable arm 13 by mistake, the position of the right chamber block 11R can be maintained continuously.

The latch mechanism 17 may further have a first buffer portion 21 and a second buffer portion 22.

The first buffer portion 21 attenuates the momentum of the movable arm 13 when switching from the open form to the closed form. Therefore, the movable arm 13 can be prevented from colliding with the fixed arm 12. That is, when switching from the open mode to the closed mode, the movable arm 13 is held by the first suction section 18 after the momentum is weakened by the first buffer section 21. Similarly, the second buffer 22 attenuates the momentum of the movable arm 13 when switching from the closed form to the open form. That is, when switching from the closed form to the open form, the movable arm 13 is After the punching portion 22 weakens the momentum, the second suction portion 19 forms a holding state.

The first buffer portion 21 has a fourth magnet M4 and a fifth magnet M5. The fourth magnet M4 is arranged on the movable arm 13. The fifth magnet M5 is arranged on the fixed arm 12. When the closed form is formed, the fourth magnet M4 and the fifth magnet M5 face each other. That is, the first buffer portion 21 exerts its function immediately before the transition to the closed form is ended. The first buffer portion 21 uses the repulsive force generated by the fourth magnet M4 and the fifth magnet M5 to reduce the momentum of the movable arm 13. Therefore, the fourth magnet M4 and the fifth magnet M5 face the same pole.

The second buffer portion 22 has a fourth magnet M4 and a sixth magnet M6. The sixth magnet M6 is arranged on the fixed arm 12. When the open shape is formed, the fourth magnet M4 and the sixth magnet M6 face each other. That is, the second buffer unit 22 exerts its function immediately before the end of the transition to the open form. The fourth magnet M4 and the sixth magnet M6 face the same pole.

Next, the left chamber block 11L and the right chamber block 11R will be described in detail.

As shown in FIG. 3, the left chamber block 11L has a third surrounding surface P3 and a left gas supply hole 9La. The left chamber block 11L is arranged on the left side of the capillary 6. The front end 11La of the left chamber block 11L is located more rearward than the front end surface 7c of the capillary arm 7. That is, the left chamber block 11L partially surrounds the left side surface 7a of the capillary arm 7. The portion facing the left side surface 7a of the capillary arm 7 is the third surrounding surface P3. The third surrounding surface P3 can also be said to be a surface orthogonal to the left-right direction D3.

As shown in FIG. 4, a block lower surface 11Lb of the left chamber block 11L is installed The chamber plate 16 (plate member) is installed. The chamber plate 16 is provided with a through hole 16a through which the capillary 6 is inserted. The chamber plate 16 extends from the third surrounding surface P3 toward the right chamber block 11R described later. The chamber plate 16 is located below the bottom surface 7d of the capillary arm 7 when the capillary arm 7 is at the bottom. That is, the chamber plate 16 covers the bottom surface 7d of the capillary arm 7.

As shown in FIG. 3 again, the left gas supply hole 9La has a discharge opening formed on the third surrounding surface P3. The left gas supply hole 9La ejects the inert gas supplied from the left gas supply pipe 9Lb from the discharge opening. The axis A2 of the discharge opening of the left gas supply hole 9La crosses the axis A1 of the capillary 6.

The right chamber block 11R has a first surrounding surface P1, a second surrounding surface P2, a first right gas supply hole 9Ra, and a second right gas supply hole 9Rc. The right chamber block 11R is arranged on the right side of the capillary tube 6. The right chamber block 11R surrounds the capillary arm 7 from the right side surface 7b of the capillary arm 7 to the front end surface 7c. The portion facing the right side surface 7b of the capillary arm 7 is the first surrounding surface P1, and the portion facing the front end surface 7c of the capillary arm 7 is the second surrounding surface P2.

The first surrounding surface P1 can also be said to be a surface facing the third surrounding surface P3 and orthogonal to the left-right direction D3. The second surrounding surface P2 can also be said to be a surface crossing the front-rear direction D2. The second surrounding surface P2 includes a right surrounding surface P2a and a left surrounding surface P2b. The right surrounding surface P2a is continuous with the first surrounding surface P1. The left surrounding surface P2b is continuous with the right surrounding surface P2a. The angle between the right surrounding surface P2a and the left surrounding surface P2b is about 90 degrees, and the boundary between the right surrounding surface P2a and the left surrounding surface P2b may cross an axis passing through the axis A1 and parallel to the front-back direction D2. Therefore, the right surrounding surface P2a faces the right side of the front end surface 7c of the capillary arm 7. The left surrounding surface P2b and the left side of the front end surface 7c of the capillary arm 7 Opposite side. A gap is provided between the front end of the left surrounding surface P2b and the front end 11La of the left chamber block 11L.

The first right gas supply hole 9Ra to which the gas pipe 9Rb is connected has a discharge opening formed on the second surrounding surface P2, and an inert gas is discharged from the discharge opening to the capillary 6. The axis A3 of the discharge opening of the first right gas supply hole 9Ra passes through the axis A1.

The second right gas supply hole 9Rc to which the gas pipe 9Rd is connected has a discharge opening formed on the lower surface of the right chamber block 11R, and an inert gas is discharged from the discharge opening. When looking at the axis A4 of the second right gas supply hole 9Rc, the axis A4 crosses the axis A2 of the left gas supply hole 9La and the axis A3 of the first right gas supply hole 9Ra on the axis A1.

Hereinafter, the operation of the wire bonding apparatus 1 will be described. The wire bonding apparatus 1 can switch between a closed form (see FIG. 1) and an open form (see FIGS. 6 and 7 ). The wire bonding apparatus 1 is in a closed form when performing wire bonding. On the other hand, the wire bonding apparatus 1 forms an open form when the operator performs some operations on the wire bonding apparatus 1. The operation may include inspection work and maintenance work. For example, the work of replacing the capillary tube 6 may be mentioned. The switching can be performed, for example, by the operator manually moving the movable arm 13.

In the closed form and the open form, the positions of the right chamber block 11R are different from each other. On the other hand, in the closed form and the open form, the positions of the left chamber block 11L are the same as each other. Furthermore, in the closed form and the open form, the position of the capillary tube 6 is not limited.

As shown in FIG. 5, when the wire bonding apparatus 1 is in the closed form, the Inert gas area SB. That is, the so-called closed form can also be described as a form for forming the inert gas region SB. In terms of its function, the inert gas region SB is a region that suppresses the oxidation of airless solder balls. In contrast, in terms of its structure, the inert gas region SB is a region surrounded by at least the left chamber block 11L and the right chamber block 11R.

Specifically, the inert gas region SB is a space surrounded by the third surrounding surface P3, the chamber plate 16, the first surrounding surface P1, the right surrounding surface P2a, and the left surrounding surface P2b. That is, the inert gas region SB is a region surrounded by five planes. In this way, the position of the right chamber block 11R for surrounding the capillary 6 is referred to as the first position. Therefore, when the right chamber block 11R is located at the first position, a part of the right chamber block 11R (part of the first surrounding surface P1 and the second surrounding surface P2) is located on the front side of the capillary 6. Furthermore, when forming the airless solder ball, the capillary arm 7 is arranged above the airless solder ball (see FIG. 4 ). Therefore, if the bottom surface 7d of the capillary arm 7 is added to the inert gas region SB, it can be called a region surrounded by six surfaces.

According to this closed form, the inert gas can be enclosed in the space surrounded by the third surrounding surface P3, the chamber plate 16, the first surrounding surface P1, the right surrounding surface P2a, the left surrounding surface P2b, and the bottom surface 7d of the capillary arm 7 Inside. Therefore, since the inert gas can be retained in the inert gas region SB, the oxidation of the airless solder ball can be preferably suppressed.

As shown in FIGS. 6 and 7, when the wire bonding apparatus 1 is opened, the working space S2 is formed. In other words, the open form is also a form for forming the working space S2 in terms of its function. That is, when it is in an open form, an area not blocked by a solid part is formed between the operator and the front end of the capillary arm 7 (ie, Work space S2). The open form is a form in which the right chamber block 11R is separated from the capillary arm 7 in terms of its structure. The separated position is the second position of the right chamber block 11R.

The position of the right chamber block 11R in each axis direction will be described more specifically. First, in the vertical direction D1, the right chamber block 11R is located above the front end of the capillary arm 7 and the capillary 6. Next, in the front-rear direction D2, the right chamber block 11R is located more rearward than the front end of the capillary arm 7 and the capillary 6. The position can also be said to be between the front end of the capillary arm 7 and between the capillary 6 and the base unit 2. Furthermore, in the left-right direction D3, the right chamber block 11R is separated to the right from the front end of the capillary arm 7 and the capillary 6.

That is, when the self-closing mode is switched to the open mode, the right chamber block 11R moves diagonally rightward with respect to the front end of the capillary arm 7. The movable mechanism 15 can separate the right chamber block 11R from the capillary arm 7. The axis AR of the bolt 14 of the movable mechanism 15 is orthogonal to the front-rear direction D2, and is inclined with respect to the up-down direction D1 and the left-right direction D3, respectively. For example, the axis AR of the bolt 14 is inclined at 45 degrees with respect to the left-right direction D3. In addition, the axis AR is arranged between the capillary 6 and the base unit 2.

According to this second position, the right side surface 7b and the front end surface 7c of the capillary arm 7 can be opened. That is, the operator can see the front end surface 7c side of the capillary arm 7 from the front. Furthermore, the operator can access from the right side 7b side of the capillary arm 7 to perform the replacement operation of the capillary 6. At this time, since the right chamber block 11R is located above the front end surface 7c of the capillary arm 7, the operator can The right side 7b enters from right to left. Therefore, workability can be further improved.

Furthermore, as shown in FIG. 1, the wire bonding apparatus 1 of the present embodiment includes a gate unit 30 and a feeder unit 40. The gate unit 30 is arranged on the feeder unit 40 and guides the inert gas discharged from the feeder unit 40 to below the capillary 6. The gate unit 30 cooperates with the chamber unit 4 to constitute an inert gas region forming portion 20. The feeder unit 40 sequentially transports the semiconductor wafer unit 100 (to be described later) to which the wire bonding is not connected downward of the capillary 6. In addition, the feeder unit 40 carries out the semiconductor wafer unit 100 to which the wire bonding is connected from below the capillary 6. Furthermore, the feeder unit 40 forms a closed space. The closed space is supplied with inert gas. Therefore, an inert gas region is formed inside the feeder unit 40. The inert gas area includes a place where the airless solder ball is connected to the electrode. Therefore, the oxidation of the airless solder balls and electrodes during wire bonding can be suppressed. That is, the wire bonding apparatus 1 forms an inert gas region including the position where the capillary 6 is positioned above to form the airless solder ball until the capillary 6 is lowered toward the semiconductor wafer unit 100 to connect the airless solder ball to the electrode On the location.

As shown in FIG. 8, the feeder unit 40 has a housing 41, a gas supply 42, a bonding platform 43, and a pneumatic gripper 44.

The housing 41 has a hollow box shape. The housing 41 transports the semiconductor wafer unit 100 in the left-right direction D3 by a transport mechanism (not shown). The housing 41 extends in the left-right direction D3. The housing 41 has a housing upper plate 41a, a housing lower plate 41b, and an opening 41h. The upper plate 41a of the case faces the gate unit 30. The opening 41h is formed in the housing upper plate 41a. The opening 41h has a rectangular shape in plan view.

The gas supply unit 42 is arranged inside the housing 41. The gas supply unit 42 supplies an inert gas around the semiconductor wafer unit 100. The gas supply unit 42 has a main surface 42a, a back surface 42b, a gas receiving tube 42c, and a gas supply hole 42h. The gas supply part 42 has a box shape, and is connected to an external gas source through a gas receiving pipe 42c. The main surface 42a faces the housing upper plate 41a. The back surface 42b faces the lower plate 41b of the housing. The gas supply hole 42h is provided on the main surface 42a.

The bonding platform 43 supports the semiconductor wafer unit 100 and distributes the inert gas supplied from the gas supply part 42 to the periphery of the semiconductor wafer unit 100. The bonding platform 43 has a main surface 43a, a back surface 43b, a distribution area 43s, and an opening 43h (second opening). The main surface 43a faces the housing upper plate 41a. In addition, the semiconductor wafer unit 100 is placed on the main surface 43a. The back surface 43b faces the main surface 42a of the gas supply unit 42. The distribution area 43s is provided on the back surface 43b. The distribution region 43s is a region recessed in the thickness direction from the back surface 43b. The opening 43h is a fine hole penetrating the main surface 43a from the distribution area 43s. The joint platform 43 has a plurality of openings 43h.

The semiconductor wafer unit 100 is placed on the main surface 43 a of the bonding table 43. The semiconductor wafer unit 100 includes a substrate 101 and a plurality of semiconductor wafers (not shown). The substrate 101 has a main surface 101a and a back surface 101b. The main surface 101a is in contact with the pneumatic gripper 44. In addition, a plurality of wire bonding regions 101c are set on the main surface 101a. The wire bonding area 101c includes a conductive connection portion to which a wire bonding is connected via the capillary tube 6, and an opening 101h (first opening). The opening 101h is formed regularly or irregularly, and several openings 101h communicate with the opening 43h. The back 101b is in contact with the bonding platform 43.

The pneumatic gripper 44 is mounted on the housing 41. Specifically, the pneumatic gripper 44 is attached to the housing upper plate 41a so as to close the opening 41h of the housing 41. The pneumatic holder 44 holds the position of the semiconductor wafer unit 100 by pressing the film-shaped semiconductor wafer unit 100 against the bonding platform 43. That is, the semiconductor wafer unit 100 is held by the pneumatic holder 44 and the bonding platform 43.

The pneumatic gripper 44 has a main surface 44a, a back surface 44b, a gripping portion 44c, and an opening 44h (third opening portion). The main surface 44a faces the gate unit 30. The back surface 44b faces the housing upper plate 41a, the bonding platform 43, and the semiconductor wafer unit 100. The clamping portion 44c is provided on the back surface 44b and protrudes toward the semiconductor wafer unit 100. The clamping portion 44c is in contact with the semiconductor wafer unit 100. That is, the clamping portion 44c is formed on the semiconductor wafer unit 100.

The openings 44h of the pneumatic gripper 44 are arranged in two rows in the left-right direction D3, and a plurality of openings are provided in the front-rear direction D2. The opening 44h is a through hole that penetrates from the main surface 44a to the contact surface of the clamping portion 44c, and communicates with any opening 101h provided in the semiconductor wafer unit 100. The opening 44h is provided corresponding to the wire bonding area 101c. That is, the tip of the capillary 6 is guided to the semiconductor wafer unit 100. Specifically, the wire bonding area 101c is exposed, and the wire bonding area 101c includes conductive connection portions such as electrode pads of the semiconductor wafer unit 100 for bonding. That is, one wire connecting area 101c may be exposed for one opening 44h, or a plurality of wire connecting areas 101c may be exposed for one opening 44h.

As shown in FIG. 9, a gate unit 30 is arranged on such a feeder unit 40. The gate unit 30 has a shutter 31 (gate portion), a right connecting portion 32R, and a left connecting portion 32L. The shutter 31 covers a part of the housing upper plate 41a. The right connecting portion 32R and the left connecting portion 32L connect the shutter 31 and the bonding tool 10. According to this configuration, when the bonding tool 10 moves along a horizontal plane (a plane formed by the front-rear direction D2 and the left-right direction D3), the gate unit 30 also moves in the horizontal direction along with the movement of the bonding tool 10. That is, when the capillary 6 connects the bonding wire to the bonding connection area 101c, the gate unit 30 moves together with the capillary tube 6 with respect to the pneumatic gripper 44 and the substrate 101.

The shutter 31 is arranged on the pneumatic gripper 44 of the feeder unit 40 and covers the pneumatic gripper 44. More specifically, the shutter 31 is disposed on the opening 44h of the pneumatic gripper 44.

The shutter 31 has a main surface 31a, a back surface 31b, an opening 31h (fourth opening), and a block facing surface 31c (first facing surface) (see FIG. 10). A slight gap is formed between the back surface 31b of the shutter 31 and the main surface 44a of the pneumatic gripper 44.

As shown in FIG. 10, the opening 31h includes a capillary introduction hole 32a and a block introduction hole 32b. The capillary introduction hole 32a is provided at a position crossing the movement trajectory of the capillary 6 (up and down direction D1), and exposes a part of the pneumatic gripper 44. Here, a part of the pneumatic gripper 44 is an area including the opening 44h. Therefore, the tip of the capillary 6 can reach the semiconductor wafer unit 100 via the capillary introduction hole 32a and the opening 44h.

The block introduction hole 32b accommodates a part of the left chamber block 11L. As shown in FIG. 11, specifically, the block introduction hole 32 b accommodates the lower portion of the left chamber block 11L, the chamber plate 16, and the chamber flange 11 s. For example, the lower plate surface of the chamber plate 16 16c may be disposed between the main surface 31a and the back surface 31b of the shutter 31, or may be disposed on the same plane as the back surface 31b.

As shown in FIG. 10 again, the block facing surface 31c is a region formed near the opening 31h. The block facing surface 31c is opposed to the block lower surface 11Rb of the right chamber block 11R. That is, the right chamber block 11R is arranged at a position where a slight gap is formed with the main surface 31a. Therefore, the right chamber block 11R does not enter the shutter 31 like the left chamber block 11L.

The right connecting portion 32R is fixed to the main surface 31a, and is connected to the right arm 8R via a corner member. The left connecting portion 32L is fixed to the main surface 31a so as to be separated from the right connecting portion 32R in the left direction, and is connected to the left arm 8L. That is, the shutter unit 30 is connected to the bonding tool 10 via the right arm 8R and the left arm 8L.

Hereinafter, the operation effect of the wire bonding apparatus 1 will be described.

The inert gas supplied from the opening 43h of the bonding stage 43 is blown onto the substrate 101. According to this configuration, an inert gas area SA can be formed around the substrate 101. Furthermore, after passing through the openings 101h and 44h, the inert gas sprayed to the substrate 101 narrows its flow at the opening 31h of the shutter 31. That is, the inert gas is led out to the tip of the capillary 6 included in the bonding tool 10 through the opening 31h. According to this configuration, the inert gas region SB can be formed at the tip of the capillary 6. Therefore, since the inert gas regions SA and SB can be preferably formed around the air-free solder ball at the tip of the capillary tube 6, the ability to suppress the oxidation of the air-free solder ball can be improved, and good bonding quality can be ensured.

Furthermore, the wire bonding apparatus 200 of the comparative example without the gate unit 30 A comparison will be made and the operation and effect of the wire bonding apparatus 1 of the implementation method will be specifically described.

13 shows a cross section of the feeder unit 40 along a plane orthogonal to the left-right direction D3 in the wire bonding apparatus 200 of the comparative example. The arrows indicate the movement of inert gas.

As shown in FIG. 13, the inert gas is discharged upward from the gas supply hole 42h, and moves toward the distribution area 43s. Next, the inert gas is discharged from the distribution area 43s through the plurality of openings 43h. The discharged inert gas is further discharged upward through the opening 101h of the substrate 101 and the opening 44h of the pneumatic gripper 44. Here, in the wire bonding apparatus 200 of the comparative example, the opening 44h below the right chamber block 11R and the left chamber block 11L is covered. However, all other openings 44h are opened. Therefore, the inert gas is discharged into the atmosphere from the opened opening 44h without being reused.

As shown in FIG. 12, in the wire bonding apparatus 1, the gate unit 30 is arranged with a gap above the opening 44 h. Then, the inert gas discharged from the opening 44h moves in the front-rear direction D2 through the gap between the back surface 31b and the main surface 44a. Then, when the inert gas reaches the opening 31h, it will move upward again. An inert gas region SB surrounded by the right chamber block 11R and the left chamber block 11L is formed above the opening 31h. That is, the inert gas discharged from the feeder unit 40 is guided to the inert gas region SB by the gate unit 30.

In other words, in the wire bonding apparatus 1 implementing the method, the inert gas of the feeder unit 40 is utilized in two aspects. That is, the inert gas is first used in the inert gas area SA (first inert gas area) around the semiconductor wafer unit 100 Formation. Thereafter, the inert gas is used to form the inert gas region SB around the airless solder ball.

The inert gas is supplied to the inert gas region SB from the first right gas supply hole 9Ra, the second right gas supply hole 9Rc, and the left gas supply hole 9La. Therefore, since the inert gas is supplied to the inert gas region SB from two places, an inert gas region capable of sufficiently suppressing the oxidation of the airless solder ball can be formed.

The induction of the inert gas is generated in the left-right direction D3. As shown in FIG. 9, inert gas is introduced from the gas receiving pipe 42c and discharged upward from the gas supply hole 42h. Next, the inert gas is further discharged upward through the plurality of openings 43h, the opening 101h, and the opening 44h of the pneumatic gripper 44. A plurality of openings 44h are provided in the left-right direction D3. The gate unit 30 is arranged so as to block the opening 44h other than the opening 44h that exposes the wire bonding area 101c to be operated. According to this configuration, the inert gas is retained in the opening 44h to form the inert gas area SA. Then, the inert gas moves in the left-right direction D3 through the gap between the back surface 31b and the main surface 44a. Then, when the inert gas reaches the opening 31h, it moves upward again and is guided to the inert gas region SB.

Therefore, according to the wire bonding apparatus 1 of the embodiment method, the inert gas provided by the feeder unit 40 can be effectively used. In addition, when forming the inert gas region SB for the airless solder ball, the wire bonding apparatus 1 can be used in addition to the inert gas supplied from the gas supply part 42 of the right chamber block 11R and the left chamber block 11L Inert gas induced from the feeder unit 40. Therefore, the wire bonding apparatus 1 can improve the forming ability of the gas environment, so that a desired oxygen concentration can be formed Inert gas area SB. Furthermore, since the wire bonding apparatus 1 can form a high-quality airless solder ball, good bonding quality can be ensured.

In addition, when the capillary 6 connects the bonding wire to the bonding connection area 101c, the shutter 31 moves together with the capillary tube 6 with respect to the pneumatic gripper 44 and the substrate 101. According to this configuration, it is not necessary to provide a complicated mechanism, and the inert gas area SA can be formed using the inert gas discharged from the feeder unit 40.

Furthermore, the bonding tool 10 further includes: a chamber plate 16 having a through hole 16a through which the front end of the capillary 6 passes; a chamber unit 4 surrounding the capillary 6; and an inert gas supply path for the chamber plate 16 and the chamber unit The area surrounded by 4 is supplied with the second inert gas. According to this configuration, in addition to the inert gas region SA, an inert gas region SB can be further formed. Therefore, the oxidation of airless solder balls can be suppressed better.

Further, as shown in FIG. 4, the inert gas area SA is formed through the inert gas at the opening 44h, and the inert gas area SA becomes an environment that passes through the through hole 16a to the tip of the capillary 6 on the lower side; from the first right gas supply hole 9Ra The inert gas supplied from the inert gas supply path constituted by the second right gas supply hole 9Rc and the left gas supply hole 9La forms an inert gas region SB, and the inert gas region SB becomes the environment of the tip of the capillary tube 6 located above the passage hole 16a .

Here, referring to FIG. 4, attention is paid to the inert gas regions SA and SB simultaneously. The inert gas area SA suppresses the oxidation of the airless solder ball and the conductive connection portion when the airless solder ball is bonded to the substrate 101 in the wire bonding area 101c. On the other hand, the inert gas region SB suppresses the oxidation of the airless solder balls formed at the tip of the capillary 6. The inert gas areas SA, SB are along the up-down direction D1, and the inert gas area SA is located It is set on the lower side of the inert gas region SB. The boundary between the inert gas area SA and the inert gas area SB can be used as the chamber plate 16, for example. That is, the inert gas area formed below the chamber plate 16 is the inert gas area SA. In addition, the inert gas region formed above the chamber plate 16 is the inert gas region SB.

Further, the chamber unit 4 includes a right chamber block 11R, a left chamber block 11L that is independent of the right chamber block 11R, and a relative movement of the right chamber block 11R with respect to the capillary tube 6 Event agency 15. The first mechanism of the movable mechanism 15 surrounding the capillary 6 by the left chamber block 11L and the right chamber block 11R, and the first form of opening a part of the circumference of the capillary 6 by moving the right chamber block 11R Switch between 2 forms.

According to the above configuration, the movable mechanism 15 is switched from the open form to the closed form by moving the left chamber block 11L. In the closed form, the capillary 6 is surrounded by the left chamber block 11L and the right chamber block 11R. Therefore, since the inert gas can be retained around the capillary tube 6, the oxidation of the airless solder ball can be suppressed. Then, the movable mechanism 15 switches the left-chamber block 11L in the reverse direction to switch from the closed mode to the open mode. In the open form, part of the periphery of the capillary 6 is opened, so that the working space S2 can be secured. Therefore, the workability of wire bonding can be improved. Thereby, the wire bonding apparatus 1 can ensure both good bonding quality and improvement of workability.

Moreover, the wire bonding apparatus 1 of this embodiment method includes the movable mechanism 15 which moves the right chamber block 11R. Furthermore, the gate unit 30 includes a block facing surface 31c that faces the block lower surface 11Rb of the right chamber block 11R. According to this configuration, the block The facing portion 31c covers the opening 44h. That is, the area of the shutter 31 covering the opening 44h becomes larger. Therefore, the inert gas discharged from the feeder unit 40 can be efficiently induced toward the inert gas region SB.

Furthermore, according to the wire bonding apparatus 1 of the present embodiment, the chamber unit 4 further has a left arm 8L that maintains the relative position of the left chamber block 11L with respect to the capillary tube 6. Moreover, the gate unit 30 includes a block lower surface 11Lb that receives the left chamber block 11L and an opening 31h of the chamber plate 16. According to this configuration, since the opening 31h becomes larger, the shutter 31 can be reduced in weight. Moreover, according to the lightweight shutter 31, since the inertial force due to the mass becomes smaller, the high-speed operation of the bonding tool 10 is not hindered. Furthermore, the opening 44h not covered by the shutter 31 is covered by the left chamber block 11L or the like received by the opening 31h. That is, the left chamber block 11L can replace the function of the shutter 31. Therefore, the inert gas discharged from the feeder unit 40 can be efficiently induced toward the inert gas region SB.

The present invention has been described in detail above based on the implementation method of the present invention. However, the present invention is not limited to the implementation method. The present invention can be variously modified without departing from the gist thereof.

In the implementation method described above, a configuration is adopted in which the left chamber block 11L is fixed and the right chamber block 11R is moved. For example, in addition to the right chamber block 11R, the left chamber block 11L may be actuated by the second movable portion (second mechanism). The gate unit 30 further includes a block facing portion (second pair of faces) facing the block lower surface 11Lb of the left chamber block 11L. That is, since the opening 31h is further narrowed, the inert gas discharged from the feeder unit 40 can be more effectively induced toward the inert gas region SB.

In the implementation method described above, the gas supply section 9 is provided on both the left chamber block 11L and the right chamber block 11R. For example, only one of the left chamber block 11L and the right chamber block 11R may be provided with the gas supply unit 9.

In the above-described embodiment method, the second position of the right chamber block 11R is set to be diagonally upward and rearward with respect to the capillary 6. The second position of the right chamber block 11R may be any position that can open a part of the front end of the capillary tube 6 and the capillary arm 7, and is not limited to this arrangement.

1‧‧‧Wire bonding device

2‧‧‧Base unit

3‧‧‧Capillary unit

4‧‧‧Chamber unit

4L‧‧‧Left chamber unit

4R‧‧‧Right chamber unit

6‧‧‧Capillary

7‧‧‧Capillary arm

8L‧‧‧Left arm

8R‧‧‧right arm

9‧‧‧Gas Supply Department

9R‧‧‧Right gas supply unit

10‧‧‧bonding tool

11‧‧‧ chamber

11L‧‧‧Left chamber block

11R‧‧‧Right chamber block

12‧‧‧fixed arm

13‧‧‧movable arm

13a‧‧‧End

13b‧‧‧Front end

15‧‧‧ Activity organization

20‧‧‧Inert gas area formation department

30‧‧‧Brake unit

40‧‧‧Feeder unit

AR‧‧‧Axis

D1‧‧‧Up and down direction

D2‧‧‧Fore and aft direction

D3‧‧‧direction

M3‧‧‧The third magnet

M4‧‧‧ 4th magnet

M6‧‧‧ 6th magnet

SB‧‧‧Inert gas area

Claims (4)

A wire bonding apparatus includes: a bonding platform, a support substrate, and a second opening for blowing a first inert gas on the substrate, the substrate having a first opening in the wire bonding area; a pneumatic gripper, It has a plurality of third openings that open corresponding to the wire bonding area of the substrate, and fixes the substrate on the bonding platform; an upper bonding mechanism has a wire bonding to the wire bonding A capillary in the area; and a gate portion arranged above the pneumatic gripper for the capillary to pass through, and having a fourth opening, the fourth opening passes through the first opening, the The flow path of the first inert gas in the second opening and the third opening is narrowed, and the fourth opening leads the first inert gas toward the tip of the capillary, and the upper part is joined The mechanism further includes: a plate member having a through hole through which the front end of the capillary passes; a chamber member that surrounds the capillary; and an inert gas supply path that supplies the area surrounded by the plate member and the chamber member In the second inert gas, the plate member separates the first inert gas region formed by the first inert gas from the second inert gas region formed by the second inert gas. The wire bonding apparatus as described in item 1 of the patent application range, wherein the gate portion is opposite to the pneumatic gripper together with the capillary when the capillary connects the wire to the wire bonding area And the substrate moves. The wire bonding apparatus as described in item 1 of the patent application scope, wherein The first inert gas region becomes an environment that passes through the through hole to the tip of the capillary tube on the lower side, and the second inert gas region becomes an environment that is located at the tip of the capillary tube above the through hole. The wire bonding apparatus as described in item 1 of the patent application scope, wherein the chamber member includes: a first chamber block, a second chamber block that is an independent individual from the first chamber block, And an active part that moves one of the first chamber block and the second chamber block relative to the capillary, and the movable part The first form in which the second chamber block surrounds the capillary and the capillary is opened by moving at least one of the first chamber block and the second chamber block The second forms of a part of the surroundings are switched to each other.

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