JP2020155425A - Wire bonding device - Google Patents

Abstract

To improve capability which suppresses oxidation of a free air ball, and to secure satisfactory bonding quality as a result.SOLUTION: A feeder unit 40 of a wire bonding device comprises: a bonding stage 43 supporting a substrate 101 including an opening 101h in a wire connection region 101c, and including an opening 43h blowing an inert gas to the substrate; a wind clamper 44 including multiple openings 44h which are opened correspondingly to the wire connection region of the substrate, and fixing the substrate to the bonding stage; a bonding tool including a capillary crimping a wire in the wire connection region; and a shutter plate which is disposed at an upper side of the wind clamper and includes an opening where the capillary passes, for leading out the inert gas to a tip end of the capillary by restricting a channel of the inert gas passing the opening.SELECTED DRAWING: Figure 8

Description

The present invention relates to a wire bonding apparatus.

When a wire is bonded to an electrode of a semiconductor chip, ball bonding is performed. In ball bonding, the tip of a wire protruding from the tip of a capillary is melted to form a free air ball. Then, the free air ball is pressed against the electrode. Since the free air ball is a molten metal, it is relatively easy to oxidize. Oxidation of free air balls can cause poor connection with the electrodes.

JP-A-2007-294975 U.S. Patent Application Publication No. 2007/0251980 Japanese Unexamined Patent Publication No. 5-235080

Patent Documents 1 to 3 disclose a technique for providing an inert gas to a region where free air balls are formed in order to suppress oxidation of free air balls. In the techniques disclosed in Patent Documents 1 and 2, a discharge port of a gas supply pipe is arranged near the tip of the capillary, and cover gas is provided from the discharge port toward the ball. The technique disclosed in Patent Document 3 ejects an oxidation-suppressing gas such as nitrogen gas supplied to the closed feeder toward the capillary tool.

In the technical field, an oxidation suppression technique for free air balls using an inert gas (Patent Documents 1 to 3) is known, but further improvement in the oxidation suppression ability is desired.

Therefore, the present invention provides a wire bonding apparatus capable of improving the ability to suppress oxidation of free air balls and thus ensuring good bonding quality.

One embodiment of the present invention corresponds to a bonding stage having a second opening that supports a substrate having a first opening in the wire connection region and blowing a first inert gas onto the substrate, and a wire connection region of the substrate. A wind clamper having a plurality of third openings to open and fixing the substrate to the bonding stage, an upper bonding mechanism having a capillary for crimping the wire to the wire connection region, and an upper bonding mechanism arranged above the wind clamper through which the capillary passes. A shutter having a fourth opening that draws out the first inert gas at the tip of the capillary by narrowing the flow path of the first inert gas that has passed through the first opening, the second opening, and the third opening. , Equipped with.

The first inert gas supplied from the second opening of the bonding stage is sprayed onto the substrate. According to this configuration, it is possible to form an inert gas region around the substrate. Then, after the first inert gas sprayed on the substrate passes through the first opening and the third opening, the flow is throttled at the fourth opening in the shutter. That is, the first inert gas is led out to the tip of the capillary of the upper bonding mechanism by the fourth opening. According to this configuration, it is possible to form an inert gas region at the tip of the capillary. Therefore, since the inert gas region can be suitably formed around the free air ball at the tip of the capillary, the ability to suppress the oxidation of the free air ball can be improved, and thus good bonding quality can be ensured.

According to the present invention, the ability to suppress the oxidation of free air balls can be improved, and thus good bonding quality can be ensured.

FIG. 1 is a perspective view showing a first embodiment of the wire bonding apparatus according to the present embodiment. FIG. 2 is a perspective view showing the movable arm in an exploded manner. FIG. 3 is a plan view showing a left chamber block and a right chamber block. FIG. 4 is a front view showing a left chamber block and a right chamber block. FIG. 5 is a perspective view showing the inert gas region. FIG. 6 is a perspective view showing a second form of the wire bonding apparatus. FIG. 7 is a side view showing a second form of the wire bonding apparatus. FIG. 8 is an enlarged cross-sectional perspective view showing the configuration of the feeder unit. FIG. 9 is a cross-sectional view of the feeder unit and the shutter unit showing the flow of the inert gas. FIG. 10 is an enlarged perspective view showing the vicinity of the shutter opening of the shutter unit. FIG. 11 is a diagram showing a cross section of the shutter plate. FIG. 12 is another cross-sectional view of the feeder unit and the shutter unit showing the flow of the inert gas. FIG. 13 is a cross-sectional view of a feeder unit and a shutter unit according to a comparative example showing the flow of the inert gas.

Hereinafter, embodiments for carrying out the present invention will be described in detail with reference to the accompanying drawings. In the description of the drawings, the same elements are designated by the same reference numerals, and duplicate description will be omitted.

The wire bonding apparatus 1 shown in FIG. 1 crimps a wire to an electrode of a semiconductor chip or a substrate. The wire bonding device 1 has a base unit 2 (base portion), a capillary unit 3 (capillary portion), and a chamber unit 4 (chamber member). The base unit 2, the capillary unit 3, and the chamber unit 4 form a bonding tool 10 (upper bonding mechanism). The wire bonding device 1 has other components such as a housing and a control device, but these are omitted in the following description and drawings.

The wire bonding device 1 holds the wire so as to slightly protrude from the capillary unit 3, and then forms a free air ball at the tip of the protruding wire. Next, the wire bonding device 1 performs ball bonding. Specifically, the capillary unit 3 presses the free air ball against the electrode of the semiconductor chip. By this operation, the wire is joined to the electrode.

Here, when ball bonding is performed, a free air ball is formed at the tip of the wire as described above. Since this free air ball is, for example, molten copper, it is easily oxidized. Therefore, the wire bonding apparatus 1 takes a closed form (first form) as shown in FIG. 1, and the inert gas region SB (second non-function) as a region for suppressing the oxidation of free air balls by the chamber unit 4 The active gas region) is formed. The chamber unit 4 blows an inert gas (for example, nitrogen gas) onto the region where the free air balls are arranged to form an inert gas region SB (see FIGS. 1, 4 and 5). Further, the chamber unit 4 physically surrounds the area where the inert gas is blown. Therefore, since the inert gas is retained in the enclosed region, a good inert gas region SB can be maintained.

Hereinafter, a specific configuration of the wire bonding apparatus 1 will be described. In the description of the wire bonding apparatus 1, for convenience of explanation, the vertical direction D1, the front-rear direction D2, and the horizontal direction D3 are used. These directions are relative directions as seen from the operator who operates the wire bonding device 1. For example, the vertical direction D1 can be said to be a direction along the vertical direction or a extending direction of the capillary 6 described later. The front-rear direction D2 is a direction from the wire bonding device 1 toward the worker, and the worker side is "front" and the device side is "rear". It can be said that the left-right direction D3 is a direction orthogonal to each of the vertical direction D1 and the front-back direction D2. Further, the terms "right" and "left" here are for convenience of explanation. The "right" and "left" correspond to the "right" and "left" when viewed from an operator standing in front of the wire bonding apparatus 1.

The base unit 2 is a base that supports the capillary unit 3 and the chamber unit 4. The base unit 2 maintains a predetermined position during the period in which the wire bonding apparatus 1 is in operation. A capillary unit 3 and a chamber unit 4 are movably provided with respect to the base unit 2. For example, the capillary unit 3 reciprocates in the vertical direction D1.

The capillary unit 3 has a capillary 6 and a capillary arm 7. The capillary 6 joins the wire to the electrode of the semiconductor chip. The capillary 6 is a cylindrical member extending along the vertical direction D1. The upper end of the capillary 6 is detachably held by the capillary arm 7. The capillary 6 has a through hole extending from the upper end side to the lower end side, and an opening is provided at the lower end of the capillary 6. A wire is inserted through this through hole. The capillary 6 switches between a state of holding the wire and a state of releasing the wire by a configuration (not shown). The capillary arm 7 connects the capillary 6 to the base unit 2. The capillary arm 7 is a cantilever beam extending in the front-rear direction D2. The rear end of the capillary arm 7 is connected to the base unit 2 so as to be reciprocally movable along the vertical direction D1. The front end of the capillary arm 7 holds the upper end of the capillary 6 detachably.

The chamber unit 4 has a left chamber unit 4L and a right chamber unit 4R. One of the left chamber unit 4L and the right chamber unit 4R is movable relative to the other. Specifically, the left chamber unit 4L is fixed to the base unit 2. That is, the left chamber unit 4L does not move at all. On the other hand, the right chamber unit 4R is movable relative to the base unit 2. In other words, the right chamber unit 4R is movable relative to the left chamber unit 4L fixed to the base unit 2.

The left chamber unit 4L has a left arm 8L (holding unit), a left gas supply unit 9L (see FIG. 3 and the like), and a left chamber block 11L (second chamber block). The base end side of the left arm 8L is fixed to the base unit 2. The left chamber block 11L is fixed to the tip end side of the left arm 8L.

The right chamber unit 4R has a right arm 8R, a right gas supply unit 9R, and a right chamber block 11R (first chamber block). In the present embodiment, the left chamber block 11L and the right chamber block 11R constitute a chamber 11 (chamber member). Therefore, the left chamber block 11L and the right chamber block 11R are separate from each other. Further, the left gas supply unit 9L and the right gas supply unit 9R form a gas supply unit 9 (inert gas supply path).

The base end side of the right arm 8R is fixed to the base unit 2. The right chamber block 11R is fixed to the tip end side of the right arm 8R. The right arm 8R has a fixed arm 12 and a movable arm 13. The base end of the fixing arm 12 is fixed to the base unit 2. A movable arm 13 is connected to the fixed arm 12. The movable arm 13 has an L-shape. The base end 13a of the movable arm 13 is rotatably connected to the fixed arm 12. The right chamber block 11R is fixed to the tip 13b of the movable arm 13. That is, as the movable arm 13 rotates with respect to the fixed arm 12, the right chamber block 11R moves relative to the left chamber block 11L.

As shown in FIG. 2, the movable arm 13 is connected to the fixed arm 12 by a bolt 14. The shaft portion 14a of the bolt 14 is inserted into the insertion hole 13h of the movable arm 13. Then, the tip of the shaft portion 14a is screwed into the connecting hole 12a of the fixing arm 12. Then, the movable arm 13 is sandwiched between the head 14b of the bolt 14 and the fixed arm 12. Since the diameter of the shaft portion 14a is slightly smaller than the inner diameter of the insertion hole 13h, the movable arm 13 can be smoothly rotated with respect to the bolt 14. These connecting holes 12a, insertion holes 13h and bolts 14 form a movable mechanism 15 (movable portion).

The right chamber unit 4R may have a latch mechanism 17 if necessary. The latch mechanism 17 holds the position of the movable arm 13. Specifically, the position of the right chamber block 11R in the closed form (first form, see FIG. 1) is held, and the position of the right chamber block 11R in the open form (second form, see FIG. 6) is held. The latch mechanism 17 has a first suction portion 18 and a second suction portion 19.

The first suction unit 18 has a first magnet M1 and a second magnet M2. When the wire bonding device 1 is in the closed form, the first suction portion 18 maintains the position of the right chamber block 11R. That is, the first suction unit 18 maintains the position of the movable arm 13 with respect to the fixed arm 12. This maintenance is based on the attractive force between the first magnet M1 and the second magnet M2. Therefore, when a force in the opposite direction larger than the suction force is applied to the movable arm 13, the state in which the position of the right chamber block 11R is maintained is released.

The second suction unit 19 has a first magnet M1 and a third magnet M3. When the wire bonding device 1 is in the open form, the second suction unit 19 maintains the position of the right chamber block 11R. That is, the second suction unit 19 maintains the position of the movable arm 13 with respect to the fixed arm 12. This maintenance is based on the attractive force between the first magnet M1 and the third magnet M3. Therefore, when a force in the opposite direction larger than the suction force is applied to the movable arm 13, the state in which the position of the right chamber block 11R is maintained is released.

When the wire bonding device 1 is in operation, various parts are mechanically moving in the wire bonding device 1. According to the first suction unit 18, it is possible to prevent the right chamber block 11R from being displaced due to vibration caused by the movement of these parts. Therefore, the inert gas region SB can be suitably maintained while the wire bonding apparatus 1 is in operation.

Further, according to the second suction unit 19, the position of the right chamber block 11R can be maintained when the operator replaces the capillary 6. For example, even if the operator accidentally touches the movable arm 13, the position of the right chamber block 11R can be maintained.

The latch mechanism 17 may further have a first buffer portion 21 and a second buffer portion 22.

The first buffer portion 21 damps the momentum of the movable arm 13 when switching from the open form to the closed form. Therefore, it is possible to prevent the movable arm 13 from colliding with the fixed arm 12. That is, when switching from the open form to the closed form, the movable arm 13 is put into a holding state by the first suction portion 18 after the momentum is weakened by the first buffer portion 21. Similarly, the second buffer 22 damps the momentum of the movable arm 13 when switching from the closed form to the open form. That is, when switching from the closed form to the open form, the movable arm 13 is put into a holding state by the second suction portion 19 after the momentum is weakened by the second buffer portion 22.

The first buffer portion 21 has a fourth magnet M4 and a fifth magnet M5. The fourth magnet M4 is arranged on the fixed arm 12. The fifth magnet M5 is arranged on the movable arm 13. When the closed form is adopted, the fourth magnet M4 and the fifth magnet M5 face each other. That is, the first buffer 21 performs its function immediately before the transition to the closed form is completed. The first buffer portion 21 weakens the momentum of the movable arm 13 by utilizing the repulsive force generated by the fourth magnet M4 and the fifth magnet M5. Therefore, the surfaces of the same poles of the fourth magnet M4 and the fifth magnet M5 face each other.

The second buffer portion 22 has a fourth magnet M4 and a sixth magnet M6. The sixth magnet M6 is arranged on the fixed arm 12. In the open form, the fourth magnet M4 and the sixth magnet M6 face each other. That is, the second buffer portion 22 performs its function immediately before the transition to the open form is completed. The surfaces of the same poles of the fourth magnet M4 and the sixth magnet M6 face each other.

Subsequently, the left chamber block 11L and the right chamber block 11R will be described in detail.

As shown in FIG. 3, the left chamber block 11L has a third surrounding surface P3 and a left gas supply hole 9La. The left chamber block 11L is arranged on the left side of the capillary 6. The tip 11La of the left chamber block 11L is located behind the front end surface 7c of the capillary arm 7. That is, the left chamber block 11L partially surrounds the left side surface 7a of the capillary arm 7. The portion of the capillary arm 7 facing the left side surface 7a is the third surrounding surface P3. It can be said that the third surrounding surface P3 is a surface orthogonal to the left-right direction D3.

As shown in FIG. 4, a chamber plate 16 (plate member) is attached to the block lower surface 11Lb of the left chamber block 11L. The chamber plate 16 is provided with a passage hole 16a through which the capillary 6 is inserted. The chamber plate 16 extends from the third surrounding surface P3 toward the right chamber block 11R described later. The chamber plate 16 is located further below the bottom surface 7d of the capillary arm 7 when the capillary arm 7 is located at the lowest position. That is, the chamber plate 16 covers the bottom surface 7d of the capillary arm 7.

As shown again in FIG. 3, the left gas supply hole 9La has a discharge opening formed in the third surrounding surface P3. The left gas supply hole 9La discharges the inert gas supplied from the left gas supply pipe 9Lb from the discharge opening. The axis A2 of the discharge opening of the left gas supply hole 9La intersects the axis A1 of the capillary 6.

The right chamber block 11R has a first surrounding surface P1, a second surrounding surface P2, a first right gas supply hole 9Ra, and a second right gas supply hole 9Rc. The right chamber block 11R is arranged on the right side of the capillary 6. The right chamber block 11R surrounds the capillary arm 7 from the right side surface 7b of the capillary arm 7 to the front end surface 7c. The portion of the capillary arm 7 facing the right side surface 7b is the first surrounding surface P1, and the portion facing the front end surface 7c of the capillary arm 7 is the second surrounding surface P2.

It can be said that the first surrounding surface P1 faces the third surrounding surface P3 and is orthogonal to the left-right direction D3. It can be said that the second surrounding surface P2 is a surface that intersects the front-rear direction D2. The second surrounding surface P2 includes a right surrounding surface P2a and a left surrounding surface P2b. The right surrounding surface P2a is continuous with the first surrounding surface P1. The left surrounding surface P2b is continuous with the right surrounding surface P2a. The angle between the right surrounding surface P2a and the left surrounding surface P2b is about 90 degrees, and the boundary between the right surrounding surface P2a and the left surrounding surface P2b passes through the axis A1 and intersects the axis parallel to the front-rear direction D2. You may. Therefore, the right surrounding surface P2a faces the right side of the front end surface 7c of the capillary arm 7. The left surrounding surface P2b faces the left side of the front end surface 7c of the capillary arm 7. A gap is provided between the tip of the left surrounding surface P2b and the tip 11La of the left chamber block 11L.

The first right gas supply hole 9Ra to which the gas pipe 9Rb is connected has a discharge opening formed in the second surrounding surface P2, and discharges the inert gas from the discharge opening toward the capillary 6. The axis A3 of the discharge opening of the first right gas supply hole 9Ra passes through the axis A1.

The second right gas supply hole 9Rc to which the gas pipe 9Rd is connected has a discharge opening formed on the lower surface of the right chamber block 11R, and the inert gas is discharged from the discharge opening. When the axis A4 of the second right gas supply hole 9Rc is viewed in a plan view, the axis A4 intersects the axis A2 of the left gas supply hole 9La and the axis A3 of the first right gas supply hole 9Ra on the axis A1.

The operation of the wire bonding apparatus 1 will be described below. The wire bonding apparatus 1 is capable of switching between a closed form (see FIG. 1) and an open form (see FIGS. 6 and 7). The wire bonding device 1 is in a closed form when wire bonding is performed. On the other hand, the wire bonding device 1 is in an open form when an operator performs some operation on the wire bonding device 1. This operation can include inspection work and maintenance work, and includes, for example, work of replacing the capillary 6. This switching may be performed, for example, by the operator manually moving the movable arm 13.

The position of the right chamber block 11R is different between the closed form and the open form. On the other hand, the positions of the left chamber blocks 11L are the same in the closed form and the open form. Further, the position of the capillary 6 does not matter in the closed form and the open form.

As shown in FIG. 5, when the wire bonding apparatus 1 is in the closed form, the inert gas region SB is formed. That is, it can be said that the closed form is a form for forming the inert gas region SB. The inert gas region SB is a region that suppresses the oxidation of free air balls, as explained from its function. On the other hand, the inert gas region SB is a region surrounded by at least the left chamber block 11L and the right chamber block 11R, according to its structure.

Specifically, the inert gas region SB is a space surrounded by the third enclosing surface P3, the chamber plate 16, the first enclosing surface P1, the right enclosing surface P2a, and the left enclosing surface P2b. That is, the inert gas region SB is a region surrounded by five surfaces. The position of the right chamber block 11R for surrounding the periphery of the capillary 6 in this way is referred to as a first position. Therefore, when the right chamber block 11R is in the first position, a part of the right chamber block 11R (a part of the first surrounding surface P1 and the second surrounding surface P2) is located in front of the capillary 6. Further, when the free air ball is formed, the capillary arm 7 is arranged above the free air ball (see FIG. 4). Therefore, it can be said that the inert gas region SB is a region surrounded by six surfaces when the bottom surface 7d of the capillary arm 7 is added.

According to such a closed form, the inert gas is introduced into the third enclosing surface P3, the chamber plate 16, the first enclosing surface P1, the right enclosing surface P2a, the left enclosing surface P2b, and the bottom surface of the capillary arm 7. It can be confined in the space surrounded by 7d. Therefore, since the inert gas can be retained in the inert gas region SB, the oxidation of the free air balls can be suitably suppressed.

As shown in FIGS. 6 and 7, the work space S2 is formed when the wire bonding apparatus 1 is in the open form. That is, it can be said that the open form is a form for forming the work space S2 in terms of its function. That is, in the open form, a region (that is, a work space S2) that is not blocked by physical parts is formed between the operator and the tip of the capillary arm 7. Explaining from the structure, the open form is a form in which the right chamber block 11R is separated from the capillary arm 7. This separated position is the second position of the right chamber block 11R.

More specifically, the position of the right chamber block 11R in each axial direction will be described. First, in the vertical direction D1, the right chamber block 11R is located above the tip of the capillary arm 7 and the capillary 6. Next, in the front-rear direction D2, the right chamber block 11R is located at the tip of the capillary arm 7 and behind the capillary 6. It can be said that this position is between the tip of the capillary arm 7 and the capillary 6 and the base unit 2. Further, in the left-right direction D3, the right chamber block 11R is separated from the tip of the capillary arm 7 and the capillary 6 on the right side.

That is, when switching from the closed form to the open form, the right chamber block 11R moves diagonally rearward to the right with respect to the tip of the capillary arm 7. The configuration that separates the right chamber block 11R from the capillary arm 7 is realized by the movable mechanism 15. The axis AR of the bolt 14 of the movable mechanism 15 is orthogonal to the front-rear direction D2 and is inclined with respect to each of the vertical direction D1 and the horizontal direction D3. For example, the axis AR of the bolt 14 is tilted 45 degrees with respect to the left-right direction D3. Further, the axis AR is arranged between the capillary 6 and the base unit 2.

According to such a second position, the right side surface 7b and the front end surface 7c of the capillary arm 7 can be opened. That is, the operator can visually check the front end surface 7c side of the capillary arm 7 from the front. Further, the operator can access from the side of the right side surface 7b of the capillary arm 7 and perform the replacement work of the capillary 6. At this time, since the right chamber block 11R is located above the front end surface 7c of the capillary arm 7, the operator can access the right side surface 7b of the capillary arm 7 from right to left. Therefore, workability can be further improved.

Further, as shown in FIG. 1, the wire bonding apparatus 1 according to the present embodiment includes a shutter unit 30 and a feeder unit 40. The shutter unit 30 is arranged on the feeder unit 40 and guides the inert gas discharged from the feeder unit 40 to the lower part of the capillary 6. The shutter unit 30 cooperates with the chamber unit 4 to form the inert gas region forming portion 20. The feeder unit 40 sequentially conveys the semiconductor chip unit 100 (described later) to which the wire is not connected to the lower side of the capillary 6. Further, the feeder unit 40 carries out the semiconductor chip unit 100 to which the wire is connected from below the capillary 6. Further, the feeder unit 40 forms a closed space. An inert gas is supplied to this closed space. Therefore, an inert gas region is formed inside the feeder unit 40. This inert gas region includes where the free air ball is connected to the electrode. Therefore, oxidation of the free air ball and the electrode during wire connection can be suppressed. That is, the wire bonding device 1 includes a position from the position where the capillary 6 is above to form a free air ball to a position where the capillary 6 is lowered toward the semiconductor chip unit 100 to connect the free air ball to the electrode. Form an inert gas region.

As shown in FIG. 8, the feeder unit 40 includes a housing 41, a gas supply unit 42, a bonding stage 43, and a wind clamper 44.

The housing 41 has a hollow box shape. The housing 41 transports the semiconductor chip unit 100 in the left-right direction D3 by a transport mechanism (not shown). The housing 41 extends along the left-right direction D3. The housing 41 has a housing upper plate 41a, a housing lower plate 41b, and an opening 41h. The housing upper plate 41a faces the shutter unit 30. The opening 41h is formed in the housing upper plate 41a. The opening 41h has a rectangular shape in a plan view.

The gas supply unit 42 is arranged inside the housing 41. The gas supply unit 42 supplies the inert gas to the periphery of the semiconductor chip unit 100. The gas supply unit 42 has a main surface 42a, a back surface 42b, a gas receiving pipe 42c, and a gas supply hole 42h. The gas supply unit 42 has a box shape and is connected to an external gas source by a gas receiving pipe 42c. The main surface 42a faces the housing upper plate 41a. The back surface 42b faces the housing lower plate 41b. The gas supply hole 42h is provided on the main surface 42a.

The bonding stage 43 supports the semiconductor chip unit 100 and distributes the inert gas provided by the gas supply unit 42 around the semiconductor chip unit 100. The bonding stage 43 has a main surface 43a, a back surface 43b, a distribution region 43s, and an opening 43h (second opening). The main surface 43a faces the housing upper plate 41a. Further, the semiconductor chip unit 100 is placed on the main surface 43a. The back surface 43b faces the main surface 42a of the gas supply unit 42. The distribution region 43s is provided on the back surface 43b. The distribution region 43s is a region recessed in the thickness direction from the back surface 43b. The opening 43h is a pore penetrating from the distribution region 43s to the main surface 43a. The bonding stage 43 has a plurality of openings 43h.

The semiconductor chip unit 100 is placed on the main surface 43a of the bonding stage 43. The semiconductor chip unit 100 includes a substrate 101 and a plurality of semiconductor chips (not shown). The substrate 101 has a main surface 101a and a back surface 101b. The main surface 101a comes into contact with the wind clamper 44. Further, a plurality of wire connection regions 101c are set on the main surface 101a. The wire connection region 101c includes a conductive connection portion to which the wire is connected by the capillary 6 and an opening 101h (first opening). The openings 101h are formed regularly or irregularly, and some openings 101h communicate with the openings 43h. The back surface 101b comes into contact with the bonding stage 43.

The wind clamper 44 is attached to the housing 41. Specifically, the wind clamper 44 is attached to the housing upper plate 41a so as to close the opening 41h of the housing 41. The wind clamper 44 holds the position of the semiconductor chip unit 100 by pressing the film-shaped semiconductor chip unit 100 against the bonding stage 43. That is, the semiconductor chip unit 100 is sandwiched between the wind clamper 44 and the bonding stage 43.

The wind clamper 44 has a main surface 44a, a back surface 44b, a clamp portion 44c, and an opening 44h (third opening). The main surface 44a faces the shutter unit 30. The back surface 44b faces the housing upper plate 41a, the bonding stage 43, and the semiconductor chip unit 100. The clamp portion 44c is provided on the back surface 44b and projects toward the semiconductor chip unit 100. The clamp portion 44c comes into contact with the semiconductor chip unit 100. That is, the clamp portion 44c is formed on the semiconductor chip unit 100.

The openings 44h of the wind clamper 44 are provided in two rows along the left-right direction D3, and a plurality of openings 44h are provided in the front-rear direction D2. The opening 44h is a through hole penetrating from the main surface 44a to the contact surface of the clamp portion 44c, and communicates with any opening 101h provided in the semiconductor chip unit 100. The opening 44h is provided corresponding to the wire connection region 101c. That is, the tip of the capillary 6 is guided to the semiconductor chip unit 100. Specifically, the wire connection region 101c including the conductive connection portion such as the electrode pad of the semiconductor chip unit 100 to be bonded is exposed. That is, one opening 44h may expose one wire connection region 101c, or one opening 44h may expose a plurality of wire connection regions 101c.

As shown in FIG. 9, the shutter unit 30 is arranged on such a feeder unit 40. The shutter unit 30 has a shutter plate 31 (shutter), a right connecting portion 32R, and a left connecting portion 32L. The shutter plate 31 covers a part of the housing upper plate 41a. The right connecting portion 32R and the left connecting portion 32L connect the shutter plate 31 to the bonding tool 10. According to such a configuration, when the bonding tool 10 moves along a horizontal plane (a plane formed by the front-rear direction D2 and the left-right direction D3), the shutter unit 30 also moves in the horizontal direction as the bonding tool 10 moves. .. That is, the shutter unit 30 moves with respect to the wind clamper 44 and the substrate 101 together with the capillary 6 when the capillary 6 connects the wire to the wire connection region 101c.

The shutter plate 31 is arranged on the wind clamper 44 of the feeder unit 40 and covers the wind clamper 44. More specifically, the shutter plate 31 is arranged on the opening 44h of the wind clamper 44.

The shutter plate 31 has a main surface 31a, a back surface 31b, an opening 31h (fourth opening), and a block facing portion 31c (first facing portion) (see FIG. 10). A slight gap is formed between the back surface 31b of the shutter plate 31 and the main surface 44a of the wind clamper 44.

As shown in FIG. 10, the opening 31h includes a capillary introduction hole portion 32a and a block introduction hole portion 32b. The capillary introduction hole 32a is provided at a position intersecting the movement locus (vertical direction D1) of the capillary 6 to expose a part of the wind clamper 44. A part of the wind clamper 44 referred to here is a region including the opening 44h. Therefore, the tip of the capillary 6 can reach the semiconductor chip unit 100 through the capillary introduction hole 32a and the opening 44h.

The block introduction hole 32b accommodates a part of the left chamber block 11L. Specifically, as shown in FIG. 11, the block introduction hole portion 32b accommodates the lower portion of the left chamber block 11L, the chamber plate 16, and the chamber flange 11s. For example, the plate lower surface 16c of the chamber plate 16 may be arranged between the main surface 31a and the back surface 31b of the shutter plate 31, or may be arranged flush with the back surface 31b.

As shown again in FIG. 10, the block facing portion 31c is a region formed in the vicinity of the opening 31h. The block facing portion 31c faces the block lower surface 11Rb of the right chamber block 11R. That is, the right chamber block 11R is arranged at a position where a slight gap is formed between the right chamber block 11R and the main surface 31a. Therefore, the right chamber block 11R does not enter the shutter plate 31 like the left chamber block 11L.

The right connecting portion 32R is fixed to the main surface 31a and is connected to the right arm 8R via an angle member. The left connecting portion 32L is fixed to the main surface 31a so as to be separated from the right connecting portion 32R in the left direction, and is connected to the left arm 8L. That is, the shutter unit 30 is connected to the bonding tool 10 via the right arm 8R and the left arm 8L.

Hereinafter, the action and effect of the wire bonding apparatus 1 will be described.

The inert gas supplied from the opening 43h of the bonding stage 43 is sprayed onto the substrate 101. According to this configuration, the inert gas region SA can be formed around the substrate 101. Then, after the inert gas sprayed on the substrate 101 passes through the openings 101h and 44h, its flow is throttled at the opening 31h in the shutter plate 31. That is, the inert gas is led out to the tip of the capillary 6 included in the bonding tool 10 by the opening 31h. According to this configuration, it is possible to form the inert gas region SB at the tip of the capillary 6. Therefore, since the inert gas regions SA and SB can be suitably formed around the free air ball at the tip of the capillary 6, the ability to suppress the oxidation of the free air ball is improved, and good bonding quality is ensured. Can be done.

Further, the operation and effect of the wire bonding apparatus 1 according to the embodiment will be specifically described while comparing with the wire bonding apparatus 200 according to the comparative example which does not have the shutter unit 30.

FIG. 13 shows a cross section of the feeder unit 40 along a plane orthogonal to the left-right direction D3 in the wire bonding apparatus 200 according to the comparative example. The arrow line shows how the inert gas moves.

As shown in FIG. 13, the inert gas is discharged upward from the gas supply hole 42h and moves to the distribution region 43s. Next, the inert gas is discharged from the distribution region 43s through the plurality of openings 43h. The discharged inert gas is further discharged upward through the opening 101h of the substrate 101 and the opening 44h of the wind clamper 44. Here, in the wire bonding apparatus 200 according to the comparative example, the opening 44h below the right chamber block 11R and the left chamber block 11L is covered. However, all the other openings 44h are open. Then, the inert gas is discharged into the atmosphere from the opened opening 44h and is not reused.

As shown in FIG. 12, in the wire bonding apparatus 1, the shutter unit 30 is arranged above the opening 44h with a gap interposed therebetween. Then, the inert gas discharged from the opening 44h moves in the front-rear direction D2 through the gap between the back surface 31b and the main surface 44a. Then, when the inert gas reaches the opening 31h, it moves upward again. Above the opening 31h, an inert gas region SB surrounded by the right chamber block 11R and the left chamber block 11L is formed. That is, the inert gas discharged from the feeder unit 40 is guided to the inert gas region SB by the shutter unit 30.

In other words, in the wire bonding apparatus 1 according to the embodiment, the inert gas in the feeder unit 40 is used in two embodiments. That is, the inert gas is first used for forming the inert gas region SA (first inert gas region) around the semiconductor chip unit 100. The inert gas is then used to form the inert gas region SB around the free air ball.

The inert gas is supplied to the inert gas region SB from the first right gas supply hole 9Ra, the second right gas supply hole 9Rc, and the left gas supply hole 9La. Therefore, since the inert gas is supplied to the inert gas region SB from two locations, an inert region that can sufficiently suppress the oxidation of the free air balls can be formed.

The induction of the inert gas described above also occurs in the left-right direction D3. As shown in FIG. 9, the inert gas is introduced from the gas receiving pipe 42c and discharged upward from the gas supply hole 42h. Next, the inert gas is discharged further upward through the plurality of openings 43h, 101h, and 44h of the wind clamper 44. A plurality of openings 44h are provided along the left-right direction D3. The shutter unit 30 is arranged so as to close the other openings 44h except the opening 44h that exposes the wire connection region 101c to be worked. According to such a configuration, the inert gas is retained in the opening 44h, and the inert gas region SA is formed. Then, the inert gas moves in the left-right direction D3 through the gap between the back surface 31b and the main surface 44a. Then, when the inert gas reaches the opening 31h, it moves upward again and is guided to the inert gas region SB.

Therefore, according to the wire bonding apparatus 1 according to the embodiment, the inert gas provided to the feeder unit 40 can be effectively used. Then, when the wire bonding device 1 forms the inert gas region SB for the free air ball, in addition to the inert gas supplied from the gas supply unit 42 of the right chamber block 11R and the left chamber block 11L, the wire bonding device 1 further , The inert gas derived from the feeder unit 40 is used. Therefore, the wire bonding apparatus 1 can improve the ability to form a gas atmosphere, and can form an inert gas region SB having a desired oxygen concentration. As a result, the wire bonding apparatus 1 can form high-quality free air balls, so that good bonding quality can be ensured.

Further, the shutter plate 31 moves with respect to the wind clamper 44 and the substrate 101 together with the capillary 6 when the capillary 6 connects the wire to the wire connecting region 101c. According to this configuration, the inert gas region SA can be formed by using the inert gas discharged from the feeder unit 40 without providing a complicated mechanism.

Further, the bonding tool 10 has a chamber plate 16 having a passage hole 16a through which the tip of the capillary 6 passes, a chamber unit 4 surrounding the capillary 6, and a second inertness in the region surrounded by the chamber plate 16 and the chamber unit 4. It further has an inert gas supply path for supplying gas. According to this configuration, in addition to the inert gas region SA, the inert gas region SB can be further formed. Therefore, the oxidation of free air balls can be more preferably suppressed.

Further, as shown in FIG. 4, the inert gas that has passed through the opening 44h forms an inert gas region SA that serves as an atmosphere at the tip of the capillary 6 that has passed downward through the passage hole 16a, and is the first right gas. The inert gas supplied from the inert gas supply path composed of the supply hole 9Ra, the second right gas supply hole 9Rc, and the left gas supply hole 9La has an atmosphere at the tip of the capillary 6 located above the passage hole 16a. The inert gas region SB is formed.

Here, pay attention to the inert gas regions SA and SB with reference to FIG. The inert gas region SA suppresses oxidation of the free air ball and the conductive connection portion when the free air ball is bonded to the substrate 101 in the wire connection region 101c. On the other hand, the inert gas region SB suppresses the oxidation of the free air balls formed at the tip of the capillary 6. The inert gas regions SA and SB are set so that the inert gas region SA is located below the inert gas region SB along the vertical direction D1. The threshold of the inert gas region SA and the inert gas region SB may be, for example, the chamber plate 16. That is, the inert region formed below the chamber plate 16 is the inert gas region SA. The inert region formed above the chamber plate 16 is the inert gas region SB.

Further, the chamber unit 4 includes a right chamber block 11R, a left chamber block 11L separate from the right chamber block 11R, and a movable mechanism 15 for moving the right chamber block 11R relative to the capillary 6. .. The movable mechanism 15 has a first form in which the right chamber block 11R and the right chamber block 11R surround the periphery of the capillary 6, and a second form in which a part around the capillary 6 is opened by moving the right chamber block 11R. , To each other.

According to the above configuration, the movable mechanism 15 switches from the open form to the closed form by moving the left chamber block 11L. In the closed form, the capillary 6 is surrounded by the left chamber block 11L and the right chamber block 11R. Therefore, since the inert gas can be retained around the capillary 6, the oxidation of the free air ball can be suppressed. Then, the movable mechanism 15 switches from the closed form to the open form by moving the left chamber block 11L in the opposite direction. In the open form, since a part around the capillary 6 is open, it is possible to secure a work space S2. Therefore, the workability of wire bonding can be improved. As a result, the wire bonding apparatus 1 can both ensure good bonding quality and improve workability.

Further, the wire bonding device 1 according to the present embodiment includes a movable mechanism 15 for moving the right chamber block 11R. Further, the shutter unit 30 includes a block facing portion 31c facing the block lower surface 11Lb of the right chamber block 11R. According to this configuration, the block facing portion 31c covers the opening 44h. That is, the area of the shutter plate 31 that covers the opening 44h becomes large. Therefore, the inert gas discharged from the feeder unit 40 can be efficiently guided to the inert gas region SB.

Further, according to the wire bonding device 1 according to the present embodiment, the chamber unit 4 further has a left arm 8L that holds the position of the left chamber block 11L relative to the capillary 6. The shutter unit 30 includes a block lower surface 11Lb of the left chamber block 11L and an opening 31h that receives the chamber plate 16. According to this configuration, since the opening 31h becomes large, the weight of the shutter plate 31 can be reduced. Further, according to the lightweight shutter plate 31, the inertial force caused by the mass is reduced, so that the high-speed operation of the bonding tool 10 is not hindered. Further, the opening 44h that is not covered by the shutter plate 31 is covered by the left chamber block 11L or the like received by the opening 31h. That is, the function of the shutter plate 31 can be replaced by the left chamber block 11L. Therefore, the inert gas discharged from the feeder unit 40 can be efficiently guided to the inert gas region SB.

The present invention has been described in detail above based on the embodiment. However, the present invention is not limited to the above embodiment. The present invention can be modified in various ways without departing from the gist thereof.

In the above embodiment, the left chamber block 11L is fixed and the right chamber block 11R is movable. For example, in addition to the right chamber block 11R, the left chamber block 11L may be further operated by a second movable portion (second mechanism). The shutter unit 30 further includes a block facing portion 31d (second facing portion) facing the block lower surface 11Lb of the left chamber block 11L. That is, since the opening 31h is further reduced, the inert gas discharged from the feeder unit 40 can be more efficiently guided to the inert gas region SB.

In the above embodiment, the gas supply unit 9 is provided in both the left chamber block 11L and the right chamber block 11R. For example, the gas supply unit 9 may be provided only in either the left chamber block 11L or the right chamber block 11R.

In the above embodiment, the second position of the right chamber block 11R is diagonally upward to the right and further rearward with respect to the capillary 6. The second position of the right chamber block 11R is not limited to this position as long as a part of the tips of the capillary 6 and the capillary arm 7 can be opened.

1,200 ... Wire bonding device, 2 ... Base unit, 3 ... Capillary unit, 4 ... Chamber unit, 4L ... Left chamber unit, 4R ... Right chamber unit, 6 ... Capillary, 7 ... Capillary arm, 7a ... Left side, 7b ... right side, 7c ... front end, 7d ... bottom, 8L ... left arm, 8R ... right arm, 9 ... gas supply, 9L ... left gas supply, 9La ... left gas supply hole, 9Lb ... left gas supply pipe, 9R ... right gas supply unit, 9Ra ... first right gas supply hole, 9Rc ... second right gas supply hole, 10 ... bonding tool, 11 ... chamber, 11L ... left chamber block, 11La ... tip, 11Lb ... block bottom surface, 11R ... right chamber block, 11Rb ... block lower surface, 12 ... fixed arm, 12a ... connecting hole, 13 ... movable arm, 13a ... base end, 13b ... tip, 13h ... insertion hole, 14 ... bolt, 14a ... shaft part, 14b ... Head, 15 ... Movable mechanism, 16 ... Chamber plate, 16a ... Passing hole, 16c ... Plate lower surface, 17 ... Latch mechanism, 18 ... First suction part, 19 ... Second suction part, 20 ... Inert gas region forming part, 21 ... 1st buffer, 22 ... 2nd buffer, 30 ... Shutter unit, 31 ... Shutter plate, 31a ... Main surface, 31b ... Back surface, 31c, 31d ... Block facing portion, 31h, 41h, 43h, 44h, 101h ... opening, 32R ... right connecting part, 32L ... left connecting part, 32a ... capillary introduction hole, 32b ... block introduction hole, 40 ... feeder unit, 41 ... housing, 41a ... housing upper plate, 41b ... housing lower plate, 42 ... Gas supply unit, 42c ... Gas receiving pipe, 42a ... Main surface, 42b ... Back surface, 42h ... Gas supply hole, 43 ... Bonding stage, 43a ... Main surface, 43b ... Back surface, 43s ... Distribution area, 44 ... Wind clamper , 44a ... main surface, 44b ... back surface, 44c ... clamp part, 100 ... semiconductor chip unit, 101 ... substrate, 101a ... main surface, 101b ... back surface, A1, A2, A3, A4, AR ... axis, D1 ... vertical direction , D2 ... front-back direction, D3 ... left-right direction, M1 ... first magnet, M2 ... second magnet, M3 ... third magnet, M4 ... fourth magnet, M5 ... fifth magnet, M6 ... sixth magnet, P1 ... th 1 Surrounding surface, P2 ... 2nd surrounding surface, P2a ... Right surrounding surface, P2b ... Left surrounding surface, P3 ... 3rd surrounding surface, SA, SB ... Inert gas region, S2 ... Working space.

Claims (5)

A bonding stage having a second opening that supports a substrate having a first opening in the wire connection region and sprays the first inert gas onto the substrate.
A wind clamper having a plurality of third openings corresponding to the wire connection region of the substrate and fixing the substrate to the bonding stage.
An upper bonding mechanism having a capillary for crimping a wire to the wire connection region,
Arranged above the wind clamper, the capillary passes through, and at the same time, the flow path of the first inert gas that has passed through the first opening, the second opening, and the third opening is narrowed down to form the capillary. A wire bonding apparatus including a shutter having a fourth opening for leading out the first inert gas at its tip. The wire bonding apparatus according to claim 1, wherein the shutter moves with the capillary to the wind clamper and the substrate when the capillary connects the wire to the wire connection region. The upper bonding mechanism supplies a second inert gas to a plate member having a passage hole through which the tip of the capillary passes, a chamber member surrounding the capillary, and the plate member and the region surrounded by the chamber member. The wire bonding apparatus according to claim 1 or 2, further comprising an inert gas supply path. The first inert gas that has passed through the fourth opening forms a first inert gas region that provides an atmosphere at the tip of the capillary that has passed downward through the passage hole.
The second inert gas region supplied from the inert gas supply path forms a second inert gas region which is an atmosphere at the tip of the capillary located above the passage hole, according to claim 3. Wire bonding equipment. The chamber member moves one of the first chamber block, the second chamber block separate from the first chamber block, and the first chamber block and the second chamber block relative to the capillary. Including moving parts to make
The movable portion is formed by moving at least one of the first chamber block and the second chamber block and the first form surrounding the capillary by the first chamber block and the second chamber block. The wire bonding apparatus according to claim 3, wherein the second mode in which a part of the periphery of the wire is open is switched between the two.

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