WO2018235493A1 - Batterie rechargeable, et procédé de production de batterie rechargeable - Google Patents

Batterie rechargeable, et procédé de production de batterie rechargeable Download PDF

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Publication number
WO2018235493A1
WO2018235493A1 PCT/JP2018/019575 JP2018019575W WO2018235493A1 WO 2018235493 A1 WO2018235493 A1 WO 2018235493A1 JP 2018019575 W JP2018019575 W JP 2018019575W WO 2018235493 A1 WO2018235493 A1 WO 2018235493A1
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Prior art keywords
block
electrode
blocks
layer
secondary battery
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PCT/JP2018/019575
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English (en)
Japanese (ja)
Inventor
秀憲 安藤
大輔 長谷川
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株式会社日本マイクロニクス
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Publication of WO2018235493A1 publication Critical patent/WO2018235493A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/36—Arrangements for testing, measuring or monitoring the electrical condition of accumulators or electric batteries, e.g. capacity or state of charge [SoC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/04—Construction or manufacture in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a technology for achieving desired performance of a secondary battery.
  • Patent Document 1 discloses a method of estimating the state of charge of a battery provided with a plurality of cells.
  • the method of U.S. Pat. No. 5,075,059 comprises the steps of determining the state of charge of each cell of the battery.
  • the battery use range is determined based on the difference between the state of charge of the most charged cell and the state of charge of the least charged cell.
  • This invention is made in view of said subject, and it aims at providing the technique for making a secondary battery the desired performance.
  • a laminating step of laminating a charge layer having an n-type metal oxide material and an insulating material on a first electrode A manufacturing step of manufacturing a laminate divided into a plurality of blocks by a forming step of forming a second electrode divided into the blocks; an evaluation step of evaluating the performance of the charge layer for each block; A selection step of selecting an arbitrary block from the plurality of blocks based on the evaluation result of layer performance, and a connection step of connecting the blocks selected by the selection step with a conductor is there.
  • connection step before forming the conductor, an insulator is formed on the second electrode so as to straddle between adjacent blocks in the selected block;
  • the conductor that passes over the edges of the insulator may be formed from above the insulator so as to connect the second electrodes of the adjacent blocks.
  • connection step in the selected block, the second electrode of the selected block is straddled between the selected blocks before forming the conductor, And forming an insulator on a second electrode of the block disposed between the selected blocks, and connecting the second electrodes of the selected block to each other, both ends of the insulator
  • the conductor over the edge of the conductor may be formed from above the insulator.
  • the plurality of blocks are divided into two or more groups according to the measurement result of the performance of the charge layer, and in the selection step, based on the grouping result.
  • an arbitrary block may be selected from the plurality of blocks.
  • the charging layer may be divided into the plurality of blocks by irradiating the charging layer with the laser beam.
  • the second electrode in the forming step, may be divided and formed on the charging layer using a grid-like mask for forming the plurality of blocks.
  • the performance of the charge layer for each block is evaluated based on one or more measurement data of charge current amount, charge power amount, discharge current amount, energy density, charge / discharge efficiency.
  • an n-type oxide semiconductor layer is disposed between the first electrode and the charge layer, and a p-type oxide semiconductor layer is disposed between the second electrode and the charge layer.
  • the secondary battery according to the present embodiment includes a first electrode integrally formed, an n-type metal oxide material and an insulating material, and a charging layer disposed on the first electrode, and the charge.
  • a plurality of second electrodes disposed on the layer, an insulator disposed on the adjacent second electrode so as to straddle a dividing line between the adjacent second electrodes, and both ends of the insulator And an electric conductor disposed on the insulator so as to change over the edge of and connecting the adjacent second electrodes.
  • the charge layer may be divided based on the plurality of second electrodes.
  • the charge layer may be integrally formed on the first electrode.
  • an n-type oxide semiconductor layer is disposed between the first electrode and the charge layer, and a p-type oxide semiconductor layer is disposed between the second electrode and the charge layer. It may be
  • FIG. 3 is a flowchart showing a method of manufacturing the secondary battery according to the first embodiment. It is a figure for demonstrating the defect of a secondary battery. It is a graph which shows the difference in the battery performance by the presence or absence of a defect. It is sectional drawing which shows the structure of the secondary battery after block division. It is a figure which shows typically the structure of the secondary battery after block division. It is a table which shows the performance evaluation result for every block. It is a figure which shows a selection block and NG block typically. It is a figure which shows typically the structure of the secondary battery after block connection. It is sectional drawing which shows the structure of the secondary battery after block connection.
  • FIG. 7 is a flowchart showing a method of manufacturing a secondary battery according to a second embodiment. It is sectional drawing for demonstrating the formation process of a 2nd electrode using a mask. It is sectional drawing which shows the structure of the secondary battery after block connection. It is a figure which shows typically the result of having divided blocks into groups.
  • FIG. 1 is a cross-sectional view showing a basic laminated structure of a secondary battery.
  • the XYZ three-dimensional orthogonal coordinate system is suitably shown by the following figures for clarification of description.
  • the Z direction is the thickness direction (stacking direction) of the sheet-like secondary battery
  • the XY plane is a plane parallel to the sheet-like secondary battery.
  • the secondary battery is rectangular, and the X direction and the Y direction are parallel to the edge of the secondary battery.
  • the sheet-like battery 10 has a stacked structure in which an n-type oxide semiconductor layer 13, a charge layer 14, a p-type oxide semiconductor layer 16, and a second electrode 17 are stacked in this order on a substrate 11. have.
  • This laminated structure is referred to as a laminated body 20. That is, the stacked body 20 includes the base 11, the n-type oxide semiconductor layer 13, the charge layer 14, the p-type oxide semiconductor layer 16, and the second electrode 17.
  • the base 11 is formed of a conductive substance such as metal and functions as a first electrode.
  • the base material 11 is a negative electrode.
  • metal foil sheets such as a SUS sheet and an aluminum sheet, can be used, for example.
  • the first electrode may be formed on the base 11 by preparing the base 11 made of an insulating material. That is, the base material 11 should just be a structure containing a 1st electrode.
  • metal materials such as chromium (Cr) or titanium (Ti)
  • Cr chromium
  • Ti titanium
  • An alloy film containing aluminum (Al), silver (Ag) or the like may be used as the material of the first electrode.
  • the n-type oxide semiconductor layer 13 includes an n-type oxide semiconductor material (a second n-type oxide semiconductor material).
  • a second n-type oxide semiconductor material titanium dioxide (TiO 2 ), tin oxide (SnO 2 ), zinc oxide (ZnO) or the like can be used as the n-type oxide semiconductor layer 13.
  • the n-type oxide semiconductor layer 13 can be deposited on the substrate 11 by sputtering or vapor deposition. It is preferable to use titanium dioxide (TiO 2 ) as a material of the n-type oxide semiconductor layer 13.
  • the charge layer 14 is formed on the n-type oxide semiconductor layer 13.
  • the charge layer 14 is formed of a mixture of an insulating material and an n-type oxide semiconductor material.
  • a particulate n-type oxide semiconductor can be used as the n-type oxide semiconductor material (first n-type oxide semiconductor material) of the charge layer 14.
  • the n-type oxide semiconductor undergoes light excitation structural change by irradiation with ultraviolet light, and becomes a layer provided with a charge function.
  • a silicone resin can be used as the insulating material of the charge layer 14.
  • the insulating material it is preferable to use a silicon compound (silicone) having a main skeleton by siloxane bond such as silicon oxide.
  • the charge layer 14 is formed of silicon oxide and titanium dioxide using the first n-type oxide semiconductor material as titanium dioxide.
  • tin oxide (SnO 2 ) or zinc oxide (ZnO) is suitable as an n-type oxide semiconductor material that can be used in the charge layer 14. It is also possible to use a combination of two or all of titanium dioxide, tin oxide and zinc oxide.
  • a coating solution in which a solvent is mixed with a mixture of a precursor of titanium oxide, tin oxide, or zinc oxide and silicone oil is prepared.
  • a coating solution is prepared by mixing fatty acid titanium and silicone oil in a solvent.
  • the coating liquid is applied onto the n-type oxide semiconductor layer 13 by a spin coating method, a slit coating method, or the like.
  • the charge layer 14 can be formed on the n-type oxide semiconductor layer 13 by drying and baking the coating film.
  • titanium stearate which is a precursor of titanium oxide can be used, for example. Titanium oxide, tin oxide and zinc oxide are formed by decomposition from aliphatic acid salts which are precursors of metal oxides.
  • the charge layer 14 may be irradiated with ultraviolet light to be cured.
  • fine particles of an oxide semiconductor can also be used without using a precursor.
  • a mixture is formed by mixing titanium oxide or zinc oxide nanoparticles with silicone oil.
  • a coating liquid is produced
  • the coating solution is applied onto the n-type oxide semiconductor layer 13 by spin coating, slit coating, or the like.
  • the charge layer 14 can be formed by performing drying, baking, and UV irradiation on the coating film.
  • the first n-type oxide semiconductor material contained in charge layer 14 and the second n-type oxide semiconductor material contained in n-type oxide semiconductor layer 13 may be the same or different. Good.
  • the n-type oxide semiconductor material contained in the n-type oxide semiconductor layer 13 is tin oxide
  • the n-type oxide semiconductor material of the charge layer 14 may be tin oxide, or n other than tin oxide It may be an oxide semiconductor material.
  • the p-type oxide semiconductor layer 16 is formed on the charge layer 14.
  • the p-type oxide semiconductor layer 16 includes a p-type oxide semiconductor material.
  • a material of the p-type oxide semiconductor layer 16 nickel oxide (NiO), copper aluminum oxide (CuAlO 2 ) or the like can be used.
  • the p-type oxide semiconductor layer 16 is a nickel oxide film having a thickness of 400 nm.
  • the p-type oxide semiconductor layer 16 is deposited on the charge layer 14 by a deposition method such as evaporation or sputtering.
  • the second electrode 17 may be formed of a conductive film.
  • a metal material such as chromium (Cr) or copper (Cu) can be used.
  • Another metal material is, for example, a silver (Ag) alloy containing aluminum (Al).
  • the formation method include vapor phase film formation methods such as sputtering, ion plating, electron beam evaporation, vacuum evaporation, and chemical vapor deposition.
  • the metal electrode can be formed by electrolytic plating, electroless plating, or the like.
  • As a metal used for plating it is generally possible to use copper, copper alloy, nickel, aluminum, silver, gold, zinc or tin.
  • the second electrode 17 is an Al film with a thickness of 300 nm.
  • the stacked body 20 includes the base 11, the n-type oxide semiconductor layer 13, the charge layer 14, the p-type oxide semiconductor layer 16, and the second electrode 17. Therefore, the second electrode 17 is disposed on the outermost surface of the sheet-like battery 10.
  • the base material (first electrode) 11 and the n-type oxide semiconductor layer 13 constitute a negative electrode layer 21.
  • the p-type oxide semiconductor layer 16 and the second electrode 17 constitute a positive electrode layer 22.
  • the n-type oxide semiconductor layer 13 is disposed below the charge layer 14 and the p-type oxide semiconductor layer 16 is disposed above the charge layer 14.
  • the layer 13 and the p-type oxide semiconductor layer 16 may be in an opposite arrangement. That is, the n-type oxide semiconductor layer 13 may be disposed on the charge layer 14, and the p-type oxide semiconductor layer 16 may be disposed below the charge layer 14.
  • the substrate 11 is a positive electrode
  • the second electrode 17 is a negative electrode. That is, as long as the charge layer 14 is sandwiched between the n-type oxide semiconductor layer 13 and the p-type oxide semiconductor layer 16, the n-type oxide semiconductor layer 13 is disposed on the charge layer 14.
  • the p-type oxide semiconductor layer 16 may be disposed.
  • the sheet-like battery 10 includes the first electrode (base material 11), the first conductivity type oxide semiconductor layer (n-type oxide semiconductor layer 13 or p-type oxide semiconductor layer 16), the charge layer 14, and It may be a configuration in which the two conductivity type semiconductor layers (p-type oxide semiconductor layer 16 or n-type oxide semiconductor layer 13) and the second electrode 17 are stacked in order.
  • the sheet-like battery 10 includes a first electrode (base material 11), a first conductive oxide semiconductor layer (n-type oxide semiconductor layer 13 or p-type oxide semiconductor layer 16), a charge layer 14, and a second conductive layer. May be configured to include layers other than the second semiconductor layer 17 (p-type oxide semiconductor layer 16 or n-type oxide semiconductor layer 13).
  • the base 11 and the n-type oxide semiconductor layer 13 are used as the negative electrode layer 21.
  • the p-type oxide semiconductor layer 16 and the second electrode 17 are used as the positive electrode layer 22.
  • the laminate 20 shown in FIG. 1 some layers may be omitted, or other layers may be added. Specifically, it may be configured to include at least a positive electrode, a negative electrode, and a charge layer. Therefore, the negative electrode layer 21 may be only the substrate 11 or may have other layers.
  • the positive electrode layer 22 may be only the second electrode 17 or may have other layers.
  • the sheet-like secondary battery 10 is rectangular in the XY plane.
  • the secondary battery 10 is a 300 mm ⁇ 300 mm square.
  • the planar shape of the secondary battery 10 is not particularly limited.
  • FIG. 2 is a flowchart showing a method of manufacturing the secondary battery 10.
  • the laminated body 20 of the laminated structure shown in FIG. 1 is manufactured (S10). That is, the n-type oxide semiconductor layer 13, the charge layer 14, the p-type oxide semiconductor layer 16, and the second electrode 17 are sequentially formed on the base material 11. Thereby, the laminated body 20 used as the secondary battery 10 is prepared.
  • S10 is a lamination process of laminating a charge layer having an n-type metal oxide material and an insulating material on the first electrode.
  • performance evaluation of the secondary battery 10 is performed (S11).
  • performance evaluation for example, the charge / discharge characteristics of the secondary battery 10 are measured, and the charge / discharge performance of the secondary battery 10 is evaluated based on the measurement results.
  • the defect 31 of the secondary battery when the defect 31 of the secondary battery is present, the discharge characteristic is degraded.
  • the base material 11 which is the first electrode and the second electrode 17 are short-circuited due to the defect 31, there is a possibility that the charge and discharge can not be appropriately performed.
  • the secondary battery 10 having the defect 31 will be described as “sample A”, and the secondary battery 10 having no defect 31 will be described as “sample B”. Further, in the drawings following FIG.
  • FIG. 4 is a graph showing the difference in battery performance depending on the presence or absence of a defect. Specifically, FIG. 4 shows the time change of the voltage when the secondary battery is discharged at a constant current. In FIG. 4, the graph of the time change of sample A and the graph of the time change of sample B are shown. In the sample A, the voltage drops earlier than in the sample B. Thus, the sample A has a reduced discharge capacity.
  • the process ends. That is, when the performance of the secondary battery is equal to or higher than the reference value, it can be determined that there is no problem in the performance of the secondary battery, so the processing is ended as it is. Therefore, the sheet-like secondary battery 10 after the determination is used as it is.
  • the secondary battery 10 is divided into n blocks (S13). If the performance is less than the reference value (S12: YES), the secondary battery 10 is divided into n blocks (S13). If the performance of the secondary battery is below the reference value, it is assumed that there is a defect 31 in the secondary battery 10. In that case, the secondary battery 10 is irradiated with a laser beam by a laser processing device such as a laser scribing device. Thereby, as shown in FIG. 5 and FIG. 6, a plurality of blocks 32 divided by the plurality of dividing lines 33 are formed on the base material 11.
  • 5 is a cross-sectional view showing the configuration of the secondary battery 10 divided into a plurality of blocks 32
  • FIG. 6 is a top view of FIG.
  • the second electrode 17, the p-type oxide semiconductor layer 16, and the charge layer 14 are divided by the dividing line 33 into a plurality of blocks.
  • the dividing lines 33 are formed in a lattice by laser light.
  • the second electrode 17, the p-type oxide semiconductor layer 16, and the charge layer 14 are divided in a grid shape by the dividing line 33 along the X direction and the Y direction.
  • a plurality of blocks 32 are arranged side by side in the X direction and the Y direction.
  • six blocks in the X direction and five blocks 32 in the Y direction are arranged. That is, thirty blocks 32 are formed in the secondary battery 10.
  • blocks 32 of the same size are formed.
  • the dividing line 33 is a scribe line formed by the laser scrubbing apparatus.
  • one block 32 has a rectangular shape with a size of 50 mm to 60 mm on one side.
  • the dividing line 33 between two adjacent blocks 32 may have a width of 40 ⁇ m to 150 ⁇ m, for example. That is, two adjacent blocks 32 are separated by 40 ⁇ m to 150 ⁇ m.
  • the direction of the dividing line 33, the width of the dividing line 33, the size of the block, and the number of blocks are not limited to those described above.
  • the block 32 corresponds to a certain area of the secondary battery 10 divided by planes (XZ plane and YZ plane) in which the dividing line 33 is extended in the Z direction.
  • the block 32 is a three-dimensional area that is a rectangular parallelepiped.
  • the block 20 includes the first electrode 11, the n-type oxide semiconductor layer 13, the charge layer 14, the p-type oxide semiconductor layer 16, and the second electrode 17.
  • the laminate 20 may include at least the base 11, the charge layer 14, and the second electrode 17.
  • the second electrode 17 is disposed on the charging layer 14 and divided into a plurality of blocks 32.
  • the charge layer 14 is disposed on the base material (first electrode) 11 and includes an n-type metal oxide material and an insulating material.
  • S13 is a forming step of forming the second electrode 17 divided into a plurality of blocks on the charge layer 14.
  • the laminating step of S10 and the forming step of S13 constitute a manufacturing step of manufacturing a laminated body divided into a plurality of blocks.
  • a 1 (S14).
  • "a" is a block number for identifying a block. It is.
  • block No. Perform the performance evaluation of a (S15).
  • block no. A charge / discharge device is connected to the block 32 a, and a charge / discharge test is performed.
  • the base material 11 which is the first electrode and No. 1
  • the second electrode 17 of the block 32 a is connected to the charge / discharge device.
  • the charge / discharge device measures voltage characteristics when the charge layer 14 of the block 32 is discharged at a constant current.
  • At least one data of the charging current amount, the charging power amount, the discharging power amount, the energy efficiency, and the charging and discharging efficiency is measured. Then, based on the measured data, the performance of the charge layer 14 (hereinafter, block performance) is evaluated for each block 32.
  • FIG. 5 since 30 blocks are divided, No. 1 to No.
  • the block performance is evaluated sequentially for the thirty 30 blocks 32.
  • a table as shown in FIG. 7 is created.
  • the measurement data of the charge current amount, the charge power amount, the discharge current amount, the energy density, and the charge / discharge efficiency are associated with each other and held.
  • the table may store one or more measurement data of the charge current amount, the charge power amount, the discharge current amount, the energy density, and the charge and discharge efficiency.
  • the table is created for each sheet-like secondary battery 10.
  • the necessary blocks are selected according to the evaluation result (S18). For example, since it is divided into thirty blocks 32 in FIG. 5, when all thirty blocks 32 have been evaluated, some blocks 32 are extracted from the thirty blocks 32.
  • the block selected in S18 is set as a selected block.
  • a block 32 having a low evaluation result of the block 32 is set as an NG (defective) block 35, and the other blocks 32 are set as selection blocks 34. That is, a block 32 whose block performance satisfies a predetermined condition is set as a selection block 34, and a block 32 which does not satisfy the predetermined condition is set as an NG block 35.
  • the evaluation of the block performance may be performed by the user, or may be performed automatically by a computer program or the like.
  • connection of the selection block 34 is performed (S19). Specifically, as shown in FIG. 9, adjacent selection blocks 34 are connected by the conductor 41.
  • the conductor 41 is formed on the second electrode 17 so as to straddle the dividing line 33.
  • the second electrodes 17 of the two blocks 32 divided by the dividing line 33 are connected by the conductor 41.
  • the conductor 41 connects the second electrodes 17 of two selection blocks 34 adjacent to each other in the X direction, or connects the second electrodes 17 of two selection blocks 34 adjacent to each other in the Y direction.
  • the conductor 41 is not connected to the NG block 35.
  • FIG. 10 is a cross-sectional view schematically showing a configuration of secondary battery 10 provided with conductor 41. As shown in FIG. In FIG. 10, an insulator 42 is disposed between the conductor 41 and the second electrode 17.
  • the insulator 42 is formed on the second electrode 17.
  • An insulator 42 is disposed across the selection blocks 34. That is, the insulator 42 is arranged to straddle the dividing line 33.
  • an insulating resin film or resin paste can be used for the insulator 42.
  • the insulator 42 is not particularly limited as long as it is a material such as a resin having an insulating property.
  • the conductor 41 is formed on the insulator 42.
  • the conductor 41 is formed to protrude to the outside of the insulator 42 (that is, to cover the insulator 42). That is, the conductor 41 is formed to connect the second electrodes 17 of the adjacent selection blocks 34 with each other. One end of the conductor 41 is in contact with the second electrode 17 of the selection block 34, and the other end is in contact with the second electrode 17 of the selection block 34 next to it.
  • the conductor 41 protrudes from the both ends of the insulator 42 in the connection direction of the conductor 41 to above the second electrode 17. Therefore, at both ends of the insulator 42, the conductor 41 extends over the edge of the insulator 42 to the top of the second electrode 17 at both ends of the insulator 42. Note that the conductor 41 does not protrude from the insulator 42 above the dividing line 33.
  • the conductor 41 metal, conductive paste, conductive film, or conductive resin can be used. By doing so, the conductor 41 can be prevented from contacting the n-type oxide semiconductor layer 13, the charge layer 14, the p-type oxide semiconductor layer 16 and the like at the position of the dividing line 33. Thus, the second electrode 17 can be prevented from conducting to the n-type oxide semiconductor layer 13, the charge layer 14, and the like.
  • all the selection blocks 34 are connected in parallel.
  • the NG block 35 in which the defect occurs can be excluded.
  • a portion shorted due to a defect can be removed together with the block, so that the battery capacity can be improved. Therefore, the desired performance of the secondary battery 10 can be obtained.
  • the p-type oxide semiconductor layer 16 and the negative electrode layer are formed by laser processing. 21 is divided into blocks. That is, the second electrode 17, the p-type oxide semiconductor layer 16, and the charge layer 14 are laser processed. Not only the positive electrode layer 22 but also the charge layer 14 can be divided. Therefore, as shown in FIG. 5, patterns of a plurality of charge layers 14 are integrally formed on the n-type oxide semiconductor layer 13. By dividing the charging layer 14, the influence of the portion shorted by the defect can be more reliably removed.
  • the charging layer 14 may not be divided at the time of laser processing. That is, only the p-type oxide semiconductor layer 16 and the second electrode 17 may be divided into blocks. In this case, patterns of a plurality of p-type oxide semiconductor layers 16 are formed on the integrally formed charging layer 14. Alternatively, only the second electrode 17 may be divided into the blocks 32. In this case, the patterns of the plurality of second electrodes 17 are formed on the integrally formed p-type oxide semiconductor layer 16. The irradiation intensity of the laser may be determined according to the material and thickness of the layer to be cut. Furthermore, the second electrode 17 may be divided by a method other than laser processing.
  • the secondary battery 10 is divided into uniform blocks 32 in S13, but may be divided into non-uniform blocks 32.
  • the secondary battery 10G may be divided into blocks 32 of different sizes.
  • FIG. 11 shows an example divided into 24 blocks 32, and each block is assigned a block number (block No.). The block 32 of the block number 10 is larger than the other blocks.
  • FIG. 12 is a table showing the results of performance evaluation for the block 32 shown in FIG.
  • FIG. 12 shows the results of evaluating the block performance divided into three ranks I to III.
  • the rank column on the right side of the table of FIG. 12 is filled.
  • performance evaluation may be performed by setting two threshold values to measurement data, or performance evaluation may be performed by combining two or more types of measurement data.
  • blocks 32 can be connected per rank. For example, in the table of FIG. It is possible to connect two, eight, sixteen, twenty-two, twenty-four blocks 32 together. In this case, the block 32 of rank I is the selected block. Similarly, rank II blocks 32 can be connected together, and rank III blocks 32 can be connected together.
  • FIG. 13 is a flowchart showing a method for connecting blocks of the same rank.
  • FIG. 14 is a diagram showing a data table used in the flow of FIG.
  • block No. a reference block and block no. It is determined whether the ranks of the search blocks in b match (S32). If the ranks match (S32: YES), the reference block No. of the data table shown in FIG. Search block no. Is added (S33).
  • connection destination block When the connection destination block is added in S33 (S33), or the block No. of the search block. If b reaches the maximum number n of blocks (YES in S34), the block number of the reference block is It is determined whether a has reached the maximum number n of blocks (S36). Block No. of the reference block If a has not reached the maximum number n of blocks (S36: NO), the block No. of the reference block. a is incremented (S35), and the process returns to S31. By repeating the process from S31, it is possible to determine connection destinations of all blocks. Block No. of the reference block If a has reached the maximum number n of blocks (S36: YES), the process ends.
  • the block No. The connection destination block is determined in ascending order of. For example, when blocks of rank I are connected, as shown in FIG. For the connection destination of 2, the block No. 8 is set. Block No. For the connection destination of 8, the block No. 16 is set. Block No. For the 16 connection destinations, block no. 22 is set. Block No. For the 22 connection destinations, block No. 24 is set.
  • FIG. 15 shows a configuration in which blocks 32 of ranks I are connected according to the data table of FIG.
  • the connection destination of each block can be set by executing the process of FIG. That is, it becomes possible to fill the connection destination column of the data table of FIG. Therefore, it becomes possible to determine the connection destination according to the evaluation result.
  • Embodiment 1 although the positive electrode layer 22 integrally formed was divided into blocks 32 by laser processing, in this embodiment, the second electrode 17 divided into each block is formed without performing laser processing. doing. Specifically, the second electrode 17 divided into blocks 32 is formed using a mask when forming the second electrode 17.
  • the configuration and manufacturing method of the secondary battery according to the present embodiment will be described below with reference to the drawings. The basic configuration and the like of the secondary battery 10 are the same as those described above, and thus the description thereof is omitted.
  • FIG. 16 is a flowchart showing a method of manufacturing a secondary battery.
  • the n-type oxide semiconductor layer 13, the charge layer 14, and the p-type oxide semiconductor layer 16 are formed on the base 11 (S20).
  • the charge layer 14 is formed on the n-type oxide semiconductor layer 13.
  • the p-type oxide semiconductor layer 16 is formed on the charge layer 14.
  • S20 is a laminating step of laminating a charge layer having an n-type metal oxide material and an insulating material on the first electrode.
  • the second electrode 17 is formed on the p-type oxide semiconductor layer 16 using a mask for forming a plurality of blocks (S21).
  • S21 is a forming step of forming the second electrode 17 divided into a plurality of blocks on the charge layer 14.
  • the laminating step of S20 and the forming step of S21 constitute a manufacturing step of manufacturing a laminated body divided into a plurality of blocks.
  • FIG. 17 is a cross-sectional view showing the step of forming the second electrode 17 in the secondary battery 10A according to the present embodiment. As shown in FIG. 17, in a state where the mask 45 is disposed on the p-type oxide semiconductor layer 16, the second electrode 17 is formed by vapor deposition or sputtering.
  • the mask 45 is in the form of a lattice corresponding to the dividing line 33 shown in FIG. Accordingly, the metal material that has passed through the opening 45 a of the mask 45 is deposited on the p-type oxide semiconductor layer 16 to form a plurality of second electrodes 17.
  • a laminate 20A including at least the base 11, the charging layer 14, and the second electrode 17 is manufactured.
  • the second electrode 17 is disposed on the charge layer 14 and divided into a plurality of blocks 32.
  • the charge layer 14 is disposed on the base material 11 to be the first electrode, and includes an n-type metal oxide material and an insulating material.
  • the charge layer 14 and the p-type oxide semiconductor layer 16 are divided into blocks 32, but in the present embodiment, as shown in FIG. 17, the charge layer 14 and the p-type oxide are The object semiconductor layer 16 is not divided. That is, since the mask 45 is used only for the film formation process of the second electrode 17, the charging layer 14 and the p-type oxide semiconductor layer 16 are integrally formed. Accordingly, patterns of the plurality of second electrodes 17 are formed on the integrally formed p-type oxide semiconductor layer 16. In addition, an integrated p-type oxide semiconductor layer 16 is formed on the charge layer 14 which is integrally formed.
  • FIG. 18 shows a cross-sectional configuration in which the selection blocks 34 are connected to each other.
  • adjacent select blocks 34 are connected by a conductor 41. That is, the second electrodes 17 of two adjacent selection blocks 34 are electrically connected via the conductor 41. Furthermore, an insulator 42 is provided between the conductor 41 and the second electrode 17 in the Z direction. Thus, the conductor 41 can be prevented from coming into contact with the p-type oxide semiconductor layer 16 exposed at the dividing line 33.
  • the second electrode 17 is formed using a mask. That is, since the second electrode 17 is divided into blocks by mask film formation, an increase in the number of manufacturing steps can be suppressed. Specifically, the laser processing step as in the first embodiment is not necessary.
  • the p-type oxide semiconductor layer 16 may also be formed using the mask 45. That is, not only the second electrode 17 but also the p-type oxide semiconductor layer 16 may be divided into blocks 32. In this case, patterns of a plurality of p-type oxide semiconductor layers 16 are formed on the integrally formed charging layer 14.
  • blocks are grouped based on the block performance evaluation. Then, based on the grouping result, the selected block is selected.
  • FIG. 19 shows the case where the block 32 is divided into three groups AC.
  • the block 32 belonging to the group A is indicated as a block 32a
  • the block 32 belonging to the group B is indicated as a block 32b
  • the block 32 belonging to the group C is indicated as a block 32c.
  • the secondary battery 10B includes four blocks 32a, eight blocks 32b, and eighteen blocks 32c.
  • block 32a of group A has the best block performance and block 32c of group C has the lowest block performance.
  • Group B block 32b has block capabilities between block 32a and block 32c.
  • grouping is performed in three stages according to the block performance. The grouping is performed on the basis of one or more measurement data of the table shown in FIG. 7, that is, the amount of charge current, the amount of charge energy, the amount of discharge current, the energy density, and the charge / discharge efficiency.
  • the grouping may be performed by the user or may be automatically performed by a computer program or the like.
  • the selection block 34 can be selected according to the required battery capacity.
  • the capacity of the secondary battery 10B can be adjusted according to the number of selection blocks 34. In this way, desired battery performance can be obtained, and battery performance can be made constant.
  • the secondary battery according to the present embodiment is suitable for a stacked battery in which a plurality of sheet-like secondary batteries are stacked.
  • secondary battery 10B when manufacturing the laminated battery which laminated
  • FIG. 20 shows a connection example 1 of the selection block 34.
  • FIG. 20 schematically shows a secondary battery 10C in which the block 32a is a selection block 34. That is, the block 32 b and the block 32 c are non-selected blocks 36. Then, only the selection block 34 is connected by the conductor 41.
  • FIG. 21 schematically shows a secondary battery 10D in which the block 32b is a selection block 34. That is, the block 32 a and the block 32 c are non-selected blocks 36. Then, only the selection block 34 is connected by the conductor 41.
  • FIG. 22 schematically shows a secondary battery 10E in which a part of the block 32a and the whole of the block 32b constitute a selection block 34. That is, two of the four blocks 32a become selected blocks 34, and the remaining two become unselected blocks. Further, all eight blocks 32 b are selected blocks 33. All of the blocks 32c are non-selected blocks 36. Then, only the selection block 34 is connected by the conductor 41.
  • the number of groups and the number of selected blocks can be changed as appropriate.
  • the number of groups into which the block 32 is divided may be two or more.
  • the basic configuration and manufacturing method of the secondary battery are the same as those of the first and second embodiments.
  • the step of dividing into blocks 32 may be laser processing as shown in the first embodiment or mask deposition as shown in the second embodiment.
  • connection example 4 of the selection block 34 is shown in FIG.
  • the secondary battery 10F of FIG. 23 is divided into blocks 32 of different sizes rather than the same size as the secondary batteries (10B to 10D) shown in FIGS. 19 to 22.
  • block No. Blocks 1 to 5 have the smallest size.
  • Block No. Blocks 7 and 9 have the largest size.
  • Block No. The six and eight blocks 32 have an intermediate size.
  • the size of the block 32 may be reduced around the portion where the defect 31 tends to occur. Further, the size of the block 32 may be reduced around the portion where the defect 31 frequently occurs, and the block 32 may be larger around the portion where the defect 31 does not occur much. By doing this, the block 32 can be used effectively. Therefore, the influence of the defect 31 can be suppressed.
  • the size of the block 32 may be increased in the vicinity of the portion where the defect 31 tends to occur. That is, the size of the block 32 may be increased around the portion where the defect 31 frequently occurs, and the block 32 may be reduced around the portion where the defect 31 does not occur much. By doing this, the block 32 can be used effectively. Therefore, the influence of the defect 31 can be suppressed.
  • the size of the block 32 can be optimized according to the position where the defect 31 occurs and the frequency thereof. Therefore, the block 32 can be effectively utilized, and the battery performance can be improved. Thus, desired performance can be obtained.
  • the size and number of the blocks 32 can be changed as appropriate.
  • the size and number of the blocks 32 can be arbitrarily changed by changing the irradiation position at the time of laser processing.
  • the size and the number of the blocks 32 can be arbitrarily changed by using the mask 45 having a different shape.
  • FIG. 24 shows a configuration in which two selection blocks 34 are connected. Specifically, FIG. 24 is a cross-sectional view showing a connection configuration in the case where a non-selection block 36 is disposed between two selection blocks 34.
  • two non-selected blocks 36 are arranged between two selected blocks 34.
  • the non-selection block 36 is disposed on the second electrode 17 of the selection block 34 and between the selection blocks 34 so as to cross between the selection blocks 34.
  • the insulator 42 is formed on the second electrode 17 of After the insulator 42 is formed, conductors 41 are formed from above the insulator 42 so as to cross the edges of the insulator 42 so as to connect the second electrodes 17 of the selection block 34 with each other. By doing this, it is possible to connect two non-adjacent selection blocks 34.
  • the selection block 34 is formed by the conductor 41 and the insulator 42 having the same configuration as FIG. It is possible to connect. Further, as shown in FIG. 18, the same connection configuration can be used for a configuration in which the charge layer 14 and the p-type oxide semiconductor layer 16 are not divided by the dividing line 33. Furthermore, the connection configuration of the selection block 34 in the secondary battery 10 may not be all as shown in FIG. For example, in the secondary battery 10, when there are a plurality of connection points for connecting the selection block 34, for some connection points, two adjacent selection blocks 34 are connected as shown in FIG. 10 or FIG. For the connection points of the two selection blocks 34 which are not adjacent as shown in FIG. 24 may be connected.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Secondary Cells (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)
  • Tests Of Electric Status Of Batteries (AREA)

Abstract

L'invention concerne un procédé de production de batterie rechargeable comprenant : une étape de production dans laquelle un stratifié divisé en une pluralité de blocs (32) est formé au moyen d'une étape de stratification dans laquelle une couche de charge (13) ayant un matériau d'oxyde métallique de type n et un matériau isolant est stratifiée sur une première électrode, et une étape de formation consistant à former une seconde électrode (17) divisée en une pluralité de blocs sur la couche de charge (13) ; une étape d'évaluation dans laquelle les performances d'une couche de charge (14) sont évaluées pour chaque bloc (32) ; une étape de sélection dans laquelle des blocs sélectionnés définis de manière arbitraire (34) sont sélectionnés parmi la pluralité de blocs (32) sur la base des résultats d'évaluation des performances de la couche de charge (15) ; et une étape de connexion dans laquelle les blocs sélectionnés (34), sélectionnés dans l'étape de sélection, sont connectés par un conducteur (41).
PCT/JP2018/019575 2017-06-20 2018-05-22 Batterie rechargeable, et procédé de production de batterie rechargeable WO2018235493A1 (fr)

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JP2017-120439 2017-06-20
JP2017120439A JP2019008869A (ja) 2017-06-20 2017-06-20 二次電池、及び二次電池の製造方法

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5769674A (en) * 1980-10-20 1982-04-28 Sanyo Electric Co Ltd Assembled battery
JPH05322930A (ja) * 1992-05-15 1993-12-07 Nippon Maikuronikusu:Kk プローブ組立体およびその製造方法
JP2017034082A (ja) * 2015-07-31 2017-02-09 株式会社日本マイクロニクス 二次電池搭載チップの製造方法
JP2017054871A (ja) * 2015-09-08 2017-03-16 株式会社日本マイクロニクス 二次電池、及び二次電池の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5769674A (en) * 1980-10-20 1982-04-28 Sanyo Electric Co Ltd Assembled battery
JPH05322930A (ja) * 1992-05-15 1993-12-07 Nippon Maikuronikusu:Kk プローブ組立体およびその製造方法
JP2017034082A (ja) * 2015-07-31 2017-02-09 株式会社日本マイクロニクス 二次電池搭載チップの製造方法
JP2017054871A (ja) * 2015-09-08 2017-03-16 株式会社日本マイクロニクス 二次電池、及び二次電池の製造方法

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