WO2018223820A1 - 承载装置及半导体加工设备 - Google Patents

承载装置及半导体加工设备 Download PDF

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Publication number
WO2018223820A1
WO2018223820A1 PCT/CN2018/086851 CN2018086851W WO2018223820A1 WO 2018223820 A1 WO2018223820 A1 WO 2018223820A1 CN 2018086851 W CN2018086851 W CN 2018086851W WO 2018223820 A1 WO2018223820 A1 WO 2018223820A1
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Prior art keywords
carrying device
heat transfer
heating plate
zone
heat insulating
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PCT/CN2018/086851
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English (en)
French (fr)
Inventor
常青
李冰
赵梦欣
Original Assignee
北京北方华创微电子装备有限公司
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Application filed by 北京北方华创微电子装备有限公司 filed Critical 北京北方华创微电子装备有限公司
Priority to US16/619,651 priority Critical patent/US20200095671A1/en
Publication of WO2018223820A1 publication Critical patent/WO2018223820A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C23C16/466—Cooling of the substrate using thermal contact gas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67366—Closed carriers characterised by materials, roughness, coatings or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67383—Closed carriers characterised by substrate supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67389—Closed carriers characterised by atmosphere control
    • H01L21/67393—Closed carriers characterised by atmosphere control characterised by the presence of atmosphere modifying elements inside or attached to the closed carrierl
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Definitions

  • the present invention relates to the field of semiconductor processing, and more particularly to a carrier device and a semiconductor processing apparatus.
  • the wafer needs to be placed on a carrier of the semiconductor processing apparatus, and the heating function of the carrier is used to heat the wafer to the process temperature and maintain the process temperature during the process.
  • the present invention aims to solve at least one of the problems existing in the prior art, and proposes a carrying device and a semiconductor processing device which can not only prevent the process from being stopped due to excessive temperature, but also maintain uniform temperature throughout the process. Therefore, it is possible to provide a qualified and stable process temperature for the workpiece to be processed, and finally obtain better process results.
  • a carrying device comprising a heating plate and a cooling plate, the heating plate and the cooling plate being spaced apart, and a heat insulating region is formed between the heating plate and the cooling plate .
  • the heat insulating region is an enclosed space; and the heat transfer speed is adjusted by adjusting a gas pressure in the isolation region.
  • the insulated area is in communication with a non-atmospheric environment; or the insulated area is in communication with an atmospheric environment.
  • a heat insulating structure is further disposed between the heating plate and the cooling plate to divide the heat insulating region into at least one heat insulating region and at least one heat transfer region.
  • the heat transfer region is in communication with an atmospheric environment; the insulated region is in communication with a non-atmospheric environment.
  • the gas pressure of the thermal insulation zone is less than the gas pressure of the heat transfer zone.
  • a ratio of an orthographic projection area of the heat transfer zone on the heating plate and an orthographic area of the heat insulation zone on the heating plate ranges from 0.01 to 10.
  • the isolation structure comprises a ring body, and a space inside the ring body serves as the heat transfer area to communicate with an atmospheric environment; a space outside the ring body serves as a connection between the heat insulation area and a non-atmospheric environment.
  • the heat insulating structure includes a plurality of ring bodies having different inner diameters and mutually concentric rings, and the plurality of ring bodies divide the heat insulating area into a plurality of subspaces, and any one of the subspaces serves as a Insulation zone or heat transfer zone.
  • the isolation structure is made of a heat insulating material, and the thermal conductivity of the isolation structure is less than 16 W/m ⁇ K.
  • the contact area of the heating plate with the isolation structure does not exceed 5% of the area of the heating disk that is orthographically projected on the cooling plate.
  • a first protrusion is disposed on a surface of the cooling plate opposite to the heat insulating area;
  • a second protrusion is disposed on a surface of the heating plate opposite to the heat insulating region.
  • an atmospheric passage is disposed on the cooling plate, and the heat transfer region communicates with the atmospheric environment through the atmospheric passage.
  • the longitudinal height of the heat insulating region is less than or equal to 1 mm.
  • a heat sink is further disposed in the cooling plate.
  • the present invention also provides a semiconductor processing apparatus including a chamber and the above-described carrying device provided by the present invention, the carrying device being installed in the chamber.
  • the present invention provides a carrying device that can separate the heating plate from the cooling plate by spacing the heating plate and the cooling plate, and by forming a heat insulating region between the heating plate and the cooling plate, the cooling plate can pass through the partition
  • the hot zone takes away excess heat in the heating plate during the process, thereby avoiding the process of stopping the process due to the excessive temperature of the heating plate, thereby reducing the production cost and increasing the productivity of the device; meanwhile, due to the interval between the heating plate and the cooling plate, This can avoid a large amount of heat transfer between the heating plate and the cooling plate, so that the temperature can be uniformly stabilized throughout the process, thereby providing a stable and stable process temperature for the workpiece to be processed, and finally obtaining better process results.
  • the semiconductor processing equipment provided by the invention not only can avoid stopping the process due to excessive temperature, but also can maintain the temperature uniformity throughout the whole process, thereby providing a qualified and stable process temperature for the workpiece to be processed. In the end, better process results can be obtained.
  • FIG. 1 is a cross-sectional view of a carrier device in accordance with an embodiment of the present invention.
  • FIG. 2A is a top plan view of an isolation structure employed in accordance with an embodiment of the present invention.
  • 2B is another top view of an isolation structure employed in accordance with an embodiment of the present invention.
  • FIG 3 is a top plan view of a cooling disk and a spacer of a carrier device in accordance with another embodiment of the present invention.
  • Figure 4 is a cross-sectional view taken along line A-A of Figure 2;
  • Figure 5 is a cross-sectional view showing an embodiment of a semiconductor processing apparatus of the present invention.
  • Carrying device-1 heating plate-11, heating element-111, spacer-12, ring body-121, ring body-122, cooling plate-13, first protrusion-131, heat sink-132, atmospheric passage- 133, cooling pipe - 134, insulation zone - 14, heat transfer zone - 15, connector - 16, process chamber - 2.
  • the present invention provides a carrying device provided in a chamber for carrying a workpiece to be processed and heating it.
  • the carrying device includes a heating plate and a cooling plate, and the heating plate and the cooling plate are spaced apart, and an insulating region is formed therebetween.
  • the heat insulating region still has a certain thermal conductivity, and the cooling plate can remove excess heat in the heating plate during the process through the heat insulating region, thereby avoiding the temperature of the heating plate being too high. Stopping the process, which in turn reduces production costs and increases equipment capacity; at the same time, because of the spacing between the heating plate and the cooling plate, this avoids a large amount of heat transfer between the heating plate and the cooling plate, thereby maintaining the temperature throughout the process.
  • the uniformity is stable, which in turn can provide a qualified and stable process temperature for the workpiece to be processed, and finally obtain better process results.
  • the heating plate and the cooling plate spacing can be implemented in any manner.
  • a corresponding partition member may be used to isolate the chamber interior or the heat insulating region from the external atmosphere.
  • the above-mentioned heat insulating region may be an enclosed space.
  • the heat insulating region is a space independent of the inside of the chamber and the outside of the chamber, which can also function to transfer heat.
  • the heat transfer rate can be adjusted by adjusting the gas pressure in the isolation region. Specifically, the greater the gas pressure in the heat insulating region, the smaller the heat transfer rate; conversely, the smaller the gas pressure in the heat insulating region, the greater the heat transfer rate.
  • the insulated area may be in communication with a non-atmospheric environment, such as within the interior of the chamber; or the insulated area may be in communication with the atmosphere.
  • the heat transferred between the insulated area and the non-atmospheric environment is less than the heat transmitted through the atmosphere.
  • the insulated area can be connected to the atmospheric environment or the non-atmospheric environment according to actual needs.
  • the carrying device 1 includes a heating plate 11 and a cooling plate 13, which are spaced apart, and a heat insulating region is formed between the heating plate 11 and the cooling plate 13.
  • the heating plate 11 can directly carry the workpiece to be processed, and can also carry the tray, and the workpiece to be processed can be placed on the tray.
  • the workpiece to be processed is usually a wafer or a wafer.
  • a heating element 111 for heating is provided in the heating plate 11 to heat the workpiece to be processed on the heating plate 11.
  • the heating element 111 can be any heat generating element such as a heating wire.
  • the carrier device 1 further includes an isolation structure 12 disposed between the heating plate 11 and the cooling plate 13 to divide the insulation region into at least one insulation zone 14 and at least one heat transfer zone 15. Also, the heat insulating zone 14 transfers less heat than the heat transfer zone 15 transfers.
  • the heat transfer zone 15 can transfer more heat, it can take away excess heat in the heating plate 12 during the process, thereby avoiding stopping the process due to the excessive temperature of the heating plate, thereby reducing the cost and increasing the productivity of the device.
  • the heat transfer area 14 transfers less heat relative to the heat transfer area 15, a large amount of heat transfer between the heating plate 11 and the cooling plate 13 can be further avoided, so that the temperature can be uniformly stabilized throughout the process. In turn, a stable and stable process temperature can be provided for the workpiece to be processed, and finally a better process result can be obtained.
  • isolation structure 11 is also capable of isolating the interior of the chamber from the outside atmosphere to ensure the vacuum of the chamber.
  • the insulated zone 14 is in communication with a non-atmospheric environment.
  • the non-atmospheric environment may for example be the environment of the process chamber in which the carrier device 1 is located, or an environment in which the vacuum is artificially set.
  • the heat transfer zone 15 is in communication with the atmosphere.
  • the heat insulating zone 14 is connected to the non-atmospheric environment, and the heat transfer zone 15 is connected to the atmospheric environment and has a good heat transfer effect, is easy to implement, and has low cost.
  • an air passage 133 is provided on the cooling plate 13, and the heat transfer region 15 communicates with the atmospheric environment through the atmospheric passage 133.
  • the heat transfer region 15 communicates with the atmospheric environment through the atmospheric passage 133, and has a good heat transfer effect, is easy to implement, and has low cost.
  • the heat transfer rate of the thermal insulation zone 14 and the heat transfer zone 15 can be controlled by controlling the gas pressure within the thermal insulation zone 14 and the heat transfer zone 15 such that there is a difference in heat transfer between the two.
  • the gas pressure of the thermal insulation zone 14 is less than the gas pressure of the heat transfer zone 15, such that the heat transfer rate of the heat transfer zone 15 is greater than the heat transfer rate of the thermal insulation zone 14.
  • the gas pressure of the thermal insulation zone 14 can be controlled to be much less than the standard atmospheric pressure, and the gas pressure of the heat transfer zone 15 can be controlled to the standard atmospheric pressure.
  • the difference between the gas pressure of the thermal insulation zone 14 and the gas pressure of the heat transfer zone 15 can be achieved in a variety of ways.
  • two pumps may be provided in communication with the thermal insulation zone 14 and the heat transfer zone 15, respectively, which may be a vacuum pump or an air pump or the like.
  • the difference between the gas pressure of the heat insulating zone 14 and the gas pressure of the heat transfer zone 15 can be controlled by the suction of the vacuum pump or the blowing of the air pump.
  • the thermal insulation zone 14 can be placed in communication with the chamber in which the carrier device 1 is located, with the heat transfer zone 15 being placed in communication with the atmosphere.
  • the thermal insulation zone 14 has the same degree of vacuum as the chamber, and the gas pressure in the heat transfer zone 15 is equal to the pressure of the atmospheric environment.
  • the ratio of the orthographic projection area of the heat transfer zone 15 on the heating plate 11 to the orthographic projection area of the thermal insulation zone 14 on the heating plate 11 ranges from 0.01 to 10, preferably, the ratio ranges from 0.01 to 1. That is, when the area of the heat transfer area 15 on the heating disk 11 is a, and the area of the heat insulating area 14 on the heating plate 11 is b, the ratio of a to b ranges from 0.01 to 10.
  • the range of the ratio of the orthographic projection area of the heat transfer zone 15 on the heating plate 11 to the orthographic projection area of the heat insulating zone 14 on the heating plate 11 is selected to facilitate reasonable control of the heat transferred from the heating plate 11 and avoid heating. The heat of the disk 11 is too much to be taken away.
  • the ratio of the orthographic projection area of the appropriate heat transfer zone 15 on the heating plate 11 to the orthographic area of the thermal insulation zone 14 on the heating plate 11 can be selected in the range of 0.01-10 depending on the heating temperature requirement of the heating plate 11. .
  • the heating plate 11, the isolation structure 12, and the cooling plate 13 are disposed in order from top to bottom.
  • the isolation structure 12 can be used to support the heating plate 11 such that it is positioned above the cooling disk 13 to form a space between the heating plate 11 and the cooling disk 13.
  • the isolation structure 12 can have various designs as long as the area between the heating plate 11 and the cooling disk 13 can be separated into at least one heat insulating region 14 and at least one heat transfer region 15.
  • the isolation structure 12 can also be flexibly selected according to actual needs.
  • the isolation structure 12 can include a ring body that is easy to implement and less costly.
  • the ring body can be an O-ring.
  • the ring body may be a complete ring body or may be composed of a plurality of block structures.
  • the isolation structure 12 may be a complete ring body 121, and the space inside thereof serves as the heat transfer region 14 to communicate with the atmospheric environment; the space outside the ring body serves as the heat insulation region 15 and the non-atmosphere.
  • Environmental connectivity may also be two ring bodies (121, 122) having different inner diameters and mutually concentric rings, and the two ring bodies (121, 122) separate the heat insulation area into a plurality of sub-portions.
  • any one of the subspaces serves as the thermal insulation zone 14 or the heat transfer zone 15, for example, the central subspace serves as the heat transfer zone 15, and the remaining subspaces serve as the thermal insulation zone 14.
  • the isolation structure 12 can also be a structure having a hollow cavity.
  • the material of the isolation structure 12 can also be flexibly selected according to actual needs.
  • the isolation structure 12 is made of a ceramic material.
  • the isolation structure 12 is made of a metallic material.
  • the longitudinal height of the above-mentioned heat insulating region is less than or equal to 1 mm.
  • the longitudinal height refers to the height of the heat insulating region in a direction perpendicular to the opposing surfaces of the heating disk 11 and the cooling disk 13.
  • the selection of the longitudinal height of the insulated area facilitates a reasonable control of the heat exchange between the heating plate 11 and the cooling plate 13 to prevent the heat of the heating plate 11 from being too fast and being carried away excessively by the cooling plate 13.
  • Those skilled in the art can select the appropriate longitudinal height of the insulated area within a range of no more than 1 mm depending on the heating temperature requirement of the heating plate 11.
  • the isolation structure 12 is made of a heat insulating material, and the thermal conductivity of the isolation structure 12 is less than 16 W/m ⁇ K.
  • the selection of an isolation structure 12 of suitable thermal conductivity facilitates reducing the effect of the isolation structure 12 on the excess heat loss of the heating disk 11.
  • the isolation structure 12 made of a material having a suitable thermal conductivity can be selected according to the heating temperature requirement of the specific heating plate 11.
  • the contact area of the heating plate 11 with the isolation structure 12 does not exceed 5% of the area of the heating disk 11 that is orthographically projected on the cooling disk 13. That is, when the area of the portion where the heating disk 11 is in contact with the isolation structure 12 is e, and the area of the orthographic projection of the heating disk 11 on the cooling disk 13 is f, e is less than or equal to 5% of f.
  • This arrangement is more advantageous in reducing the contact area between the heating disk 11, the isolation structure 12, and the cooling disk 13, thereby reducing the influence of heat loss on the heating disk 11 by the three contacts.
  • the ratio between the contact area of the appropriate heating plate 11 and the isolation structure 12 and the surface area of the heating plate 11 and the cooling plate 13 may be selected within a range of not more than 5% depending on the heating temperature requirement of the heating plate 11, for example, , optional 3%.
  • a first protrusion is provided on a surface of the cooling disk 13 opposite the thermal insulation zone 14; and/or a second protrusion is provided on a surface of the heating disk 11 opposite the thermal insulation zone 14.
  • the size of the space of the thermal insulation region 14 can be adjusted to further adjust the heat transfer rate of the thermal insulation region 14. According to actual needs, it is possible to select only the first protrusion on the cooling plate 13, or to provide the second protrusion only on the heating plate 11, or to provide the first protrusion on the cooling plate 13, while on the heating plate 11. Set the second protrusion.
  • a first protrusion 131 is provided on a surface of the cooling disk 13 opposite to the heat insulating region 14.
  • the first protrusions 131 may constitute different patterns or patterns on the surface of the cooling disk 13 according to actual needs.
  • a heat sink 132 may be disposed in the cooling plate 13 .
  • the heat sink 132 can further improve the heat dissipation efficiency of the cooling disk 13.
  • the material of the heat sink 132 may be aluminum or graphite.
  • the carrier device 1 further comprises a connector 16.
  • the connecting member 16 can be provided for fixedly connecting the heating plate 11 and the cooling plate 13, thereby fixing the heating plate 11 and the cooling plate 13 more reliably together.
  • the connecting member 16 may be disposed at an edge region of the heating plate 11 and the cooling plate 13.
  • the connector 16 can be a hollow bolt or pin or the like.
  • the semiconductor processing apparatus comprises a chamber 2 and a carrier device 1 provided by the present invention, which is mounted in a chamber 2.
  • the semiconductor processing apparatus of the present invention can prevent the process from being stopped due to excessive temperature by using the above-mentioned carrying device 1, and can maintain the temperature uniformity throughout the whole process, thereby providing a qualified and stable process temperature for the workpiece to be processed. In the end, better process results can be obtained.
  • the process chamber 2 is a vacuum chamber.
  • the carrying device 1 includes a heating plate 11 and a cooling plate 13, which are spaced apart from each other, and a heat insulating region is formed between the heating plate 11 and the cooling plate 13.
  • the carrying device 1 further comprises an isolating structure 12 disposed between the heating plate 11 and the cooling plate 13 to divide the insulating region into at least one insulating zone 14 and at least one heat transfer zone 15. Also, the heat insulating zone 14 transfers less heat than the heat transfer zone 15 transfers.
  • the insulating zone 14 is in communication with the chamber 2, that is, the degree of vacuum of the insulating zone 14 is the same as the degree of vacuum of the chamber 2.
  • the heat transfer zone 15 is in communication with the external environment of the chamber 2.
  • the external environment of the chamber 2 is usually an atmospheric environment.
  • the heat transfer zone 15 can communicate with the external environment of the chamber 2 through a structure such as a connecting pipe.
  • a heating element 111 for heating may be provided in the heating plate 11.
  • the heating element 111 can in particular be a heating wire.
  • a cooling duct 134 is provided in the cooling plate 13, and a cooling duct 134 is provided for the flow of the cooling medium.
  • a cooling tube in communication with the cooling conduit 134 can be provided within the semiconductor processing apparatus to input and output cooling medium to the cooling conduit 134.
  • the above cooling medium may be, for example, cooling water or the like.
  • the semiconductor processing apparatus can be a magnetron sputtering deposition apparatus.
  • a target is provided in a common magnetron sputtering deposition apparatus.
  • the DC power source applies a bias voltage to the target to make it a negative pressure with respect to the grounded process chamber 2, and argon gas discharges in a vacuum environment to generate plasma, and the negative bias voltage can simultaneously
  • the positively charged argon ions are attracted to the target.
  • the energy of the argon ions is sufficiently high and bombards the target under the magnetic field formed by the magnetron, the metal atoms escape the surface of the target and are deposited by diffusion on the workpiece to be processed of the carrier device 1.

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Abstract

本发明提供了一种承载装置及半导体加工设备。该承载装置包括加热盘和冷却盘，加热盘和冷却盘间隔设置，且在加热盘和冷却盘之间形成有隔热区域。本发明承载装置，其不仅可以避免因温度过高而停止工艺，而且可以在整个工艺过程中维持温度均一稳定，从而可以为待加工工件提供合格稳定的工艺温度，最终可获得更佳的工艺结果。

Description

承载装置及半导体加工设备 技术领域
本发明涉及半导体加工领域，更具体地，涉及一种承载装置及半导体加工设备。
背景技术
随着半导体行业的不断发展，半导体制程变得越来越多样化。无论是哪种制程，温度都是极其重要的一环，其直接影响到设备成本和产能。
通常，在加工半导体的过程中，需要将晶片放置到半导体加工设备的承载装置上，并利用承载装置的加热功能将晶片加热至工艺温度，并在工艺过程中维持该工艺温度。
在实际操作中，受工艺气体及工艺制程的影响，较难实现承载装置的温度的有效控制。例如，在物理气相沉积(PVD)工艺中，通过溅射(Sputtering)沉积技术将靶材上的离子沉积到晶片上。由于自靶材溅射出的金属离子温度过高，导致沉积在晶片上的金属离子的热量会通过晶片传递到承载装置，使得承载装置的温度升高。为此，在工艺进行了一段时间之后必须停止工艺，以对承载装置进行降温。这种停止工艺降温的操作极大的影响了生产成本和设备的产能。
发明内容
本发明旨在至少解决现有技术中存在的问题之一，提出了一种承载装置及半导体加工设备，其不仅可以避免因温度过高而停止工艺，而且可以在整个工艺过程中维持温度均一稳定，从而可以为待加工工件提供合格稳定的工艺温度，最终可获得更佳的工艺结果。
为实现本发明的目的而提供一种承载装置，包括加热盘和冷却盘，所述加热盘和所述冷却盘间隔设置，且在所述加热盘和所述冷却盘之间形成有隔热区域。
可选的，所述隔热区域为封闭空间；通过调节所述隔离区域中的气体压强，来调节传热速度。
可选的，所述隔热区域与非大气环境连通；或者，所述隔热区域与大气环境连通。
可选的，还包括隔热结构，所述隔热结构设置在所述加热盘和所述冷却盘之间，以将所述隔热区域分隔为至少一个隔热区和至少一个传热区。
可选的，所述传热区域与大气环境连通；所述隔热区域与非大气环境连通。
可选的，所述隔热区的气体压强小于所述传热区的气体压强。
可选的，所述传热区在所述加热盘上的正投影面积和所述隔热区在所述加热盘上的正投影面积的比值范围为0.01-10。
可选的，所述隔离结构包括环体，所述环体内侧的空间用作所述传热区与大气环境连通；所述环体外侧的空间用作所述隔热区与非大气环境连通；或者，所述隔热结构包括内径不同，且互为同心环的多个环体，多个所述环体将所述隔热区域分隔为多个子空间，任意一个所述子空间用作所述隔热区或者传热区。
可选的，所述隔离结构采用隔热材料制成，所述隔离结构的导热系数小于16W/m·K。
可选的，所述加热盘与所述隔离结构的接触面积不超过所述加热盘在所述冷却盘上正投影的面积的5％。
可选的，在所述冷却盘的与所述隔热区相对的表面上设置有第一凸起；和/或
在所述加热盘的与所述隔热区相对的表面上设置有第二凸起。
可选的，在所述冷却盘上设有大气通道，所述传热区通过所述大气通道与大气环境连通。
可选的，所述隔热区域的纵向高度小于等于1mm。
可选的，所述冷却盘内还设有散热片。
作为另一个技术方案，本发明还提供一种半导体加工设备，包括腔室和本发明提供的上述承载装置，所述承载装置安装在所述腔室内。
本发明具有以下有益效果：
本发明提供的承载装置，其通过使加热盘和冷却盘间隔设置，可实现加热盘与冷却盘的分离，且通过在加热盘和冷却盘之间形成有隔热区域，冷却盘能够通过该隔热区域将工艺过程中加热盘中的多余热量带走，从而可以避免因加热盘温度过高而停止工艺，进而可以降低生产成本，提高设备的产能；同时，由于加热盘和冷却盘间隔设置，这可以避免加热盘与冷却盘之间产生大量的热量传递，从而可以在整个工艺过程中维持温度均一稳定，进而可以为待加工工件提供合格稳定的工艺温度，最终可获得更佳的工艺结果。
本发明提供的半导体加工设备，其通过采用上述承载装置，不仅可以避免因温度过高而停止工艺，而且可以在整个工艺过程中维持温度均一稳定，从而可以为待加工工件提供合格稳定的工艺温度，最终可获得更佳的工艺结果。
通过以下参照附图对本发明的示例性实施例的详细描述，本发明的其它特征及其优点将会变得清楚。
附图说明
被结合在说明书中并构成说明书的一部分的附图示出了本发明的实施例，并且连同其说明一起用于解释本发明的原理。
图1为本发明一实施例中承载装置的剖示图。
图2A为本发明一实施例采用的隔离结构的一种俯视图。
图2B为本发明一实施例采用的隔离结构的另一种俯视图。
图3为本发明另一实施例中承载装置的冷却盘和隔离件的俯视图。
图4为图2沿A-A向的剖示图。
图5为本发明半导体加工设备实施例的剖示图。
图中标示如下：
承载装置-1，加热盘-11，加热元件-111，隔离件-12，环体-121，环体-122，冷却盘-13，第一凸起-131，散热片-132，大气通道-133，冷却管道-134，隔热区-14，传热区-15，连接件-16，工艺腔室-2。
具体实施方式
下面参照附图详细描述本发明的各种示例性实施例。应注意到：除非另外具体说明，否则在这些实施例中阐述的部件和步骤的相对布置、数字表达式和数值不限制本发明的范围。
以下对至少一个示例性实施例的描述实际上仅仅是说明性的，决不作为对本发明及其应用或使用的任何限制。
对于相关领域普通技术人员已知的技术、方法和设备可能不作详细讨论，但在适当情况下，所述技术、方法和设备应当被视为说明书的一部分。
在这里示出和讨论的所有例子中，任何具体值应被解释为仅仅是示例性的，而不是作为限制。因此，示例性实施例的其它例子可以具有不同的值。
应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步讨论。
作为本发明的一个方面，本发明提供了一种承载装置,其设置在腔室中，用于承载被加工工件，并对其进行加热。承载装置包括加热盘和冷却盘，加 热盘和冷却盘间隔设置，且在二者之间形成有隔热区域。
虽然加热盘和冷却盘间隔设置，但是隔热区域仍然具有一定的导热性，冷却盘能够通过隔热区域将工艺过程中加热盘中的多余热量带走，从而可以避免因加热盘温度过高而停止工艺，进而可以降低生产成本，提高设备的产能；同时，由于加热盘和冷却盘间隔设置，这可以避免加热盘与冷却盘之间产生大量的热量传递，从而可以在整个工艺过程中维持温度均一稳定，进而可以为待加工工件提供合格稳定的工艺温度，最终可获得更佳的工艺结果。
在实际应用中，可以采用任意方式实现加热盘和冷却盘间隔设置。另外，为了避免腔室内部通过隔热区域与腔室外部的大气环境连通，可以采用相应的隔离部件将腔室内部或者隔热区域与外部的大气环境隔离。
在实际应用中，上述隔热区域可以为封闭空间，例如隔热区域是一个相对于腔室内部和腔室外部独立的空间，其同样可以起到传递热量的作用。在这种情况下，可以通过调节隔离区域中的气体压强，来调节传热速度。具体地，隔热区域中的气体压强越大，则传热速度越小；反之，隔热区域中的气体压强越小，则传热速度越大。
或者，隔热区域也可以与非大气环境连通，例如与腔室内部连通；或者，隔热区域还可以与大气环境连通。显然，隔热区域与非大气环境连通传递的热量少于与大气环境连通传递的热量，在实际应用中，可以根据实际需要而选择隔热区域与大气环境或者非大气环境连通。
下面对本发明提供的承载装置的具体实施方式进行详细描述。具体地，如图1所示，承载装置1包括加热盘11和冷却盘13，二者间隔设置，且在加热盘11和冷却盘13之间形成有隔热区域。其中，加热盘11上可直接承载待加工工件，也可承载托盘，待加工工件可放置在该托盘上。上述待加工工件通常为晶片或晶圆。另外，加热盘11内设有用于加热的加热元件111，以对加热盘11上的待加工工件进行加热。加热元件111可为诸如加热丝等的任 意可产生热量的加热元件。
在本实施例中，承载装置1还包括隔离结构12，其设置在加热盘11和冷却盘13之间，以将隔热区域分隔为至少一个隔热区14和至少一个传热区15。并且，隔热区14传递的热量少于传热区15传递的热量。
由于传热区15能够传递较多的热量，其能够在工艺过程中加热盘12中的多余热量带走，从而避免因加热盘温度过高而停止工艺，进而可以降低成本，提高设备的产能。同时，由于隔热区14相对于传热区15传递的热量较少，从而可以进一步避免加热盘11与冷却盘13之间产生大量的热量传递，从而可以在整个工艺过程中维持温度均一稳定，进而可以为待加工工件提供合格稳定的工艺温度，最终可获得更佳的工艺结果。
另外，隔离结构11还能够将腔室内部与外部的大气环境隔离，保证腔室的真空度。
可选地，隔热区14与非大气环境相连通。该非大气环境可例如为承载装置1所处的工艺腔室的环境，或者是人为设置真空度的环境。传热区15与大气环境相连通。隔热区14与非大气环境相连通，传热区15与大气环境相连通传热效果好，易于实现，成本低。
进一步可选的，在冷却盘13上设有大气通道133，传热区15通过大气通道133与大气环境连通。传热区15通过大气通道133与大气环境相连通的传热效果好，易于实现，成本低。
在实际应用中，可通过控制隔热区14和传热区15内的气体压强来控制隔热区14和传热区15的传热速率，使得两者之间具有传热差异。可选地，隔热区14的气体压强小于传热区15的气体压强，从而使得传热区15的传热速率大于隔热区14的传热速率。优选地，可将隔热区14的气体压强控制为远小于标准大气压，将传热区15的气体压强控制为标准大气压。
隔热区14的气体压强与传热区15的气体压强之间的差异可通过多种方 式实现。例如，可设置两个分别与隔热区14和传热区15相连通的泵，上述泵可为真空泵或空气泵等。通过真空泵的抽气或空气泵的吹气可控制实现隔热区14的气体压强和传热区15的气体压强的不同。又例如，可将隔热区14设置为与承载装置1所处的腔室相连通，将传热区15设置为与大气环境相连通。这样，承载装置1工作时隔热区14具有与腔室相同的真空度，传热区15内的气体压强等于大气环境的压强。
可选地，传热区15在加热盘11上的正投影面积和隔热区14在加热盘11上的正投影面积的比值范围为0.01-10，优选的，该比值范围为0.01-1。也即，当传热区15在加热盘11上的正投影面积为a，隔热区14在加热盘11上的正投影面积为b时，a与b的比值范围为0.01-10。传热区15在加热盘11上的正投影面积和隔热区14在加热盘11上的正投影面积的比值的范围选择，可有利于合理地控制自加热盘11传递出去的热量，避免加热盘11的热量过快过多地带走。可根据具体的加热盘11加热温度需求，在0.01-10的范围内选择合适的传热区15在加热盘11上的正投影面积和隔热区14在加热盘11上的正投影面积的比值。
在本实施例中，加热盘11、隔离结构12和冷却盘13自上而下依次设置。隔离结构12可用于支撑加热盘11，以使其位于冷却盘13的上方，从而在加热盘11和冷却盘13之间形成间隔。其中，隔离结构12可具有多种设计，只要实现可将加热盘11和冷却盘13之间的区域分隔为至少一个隔热区14和至少一个传热区15即可。
对于隔离结构12的结构，也可根据实际需求灵活选择。例如，隔离结构12可包括环体，环体结构易于实施，成本较低。具体实施时，环体可为O圈。
该环体可以为完整的环体，或者也可以由多个块状结构组成。具体地，如图2A所示，隔离结构12可以为一个完整的环体121，其内侧的空间用作 传热区14与大气环境连通；环体外侧的空间用作隔热区15与非大气环境连通。或者，如图2B所示，隔离结构12也可以为内径不同，且互为同心环的两个环体(121，122)，两个环体(121，122)将隔热区域分隔为多个子空间，任意一个子空间用作隔热区14或者传热区15，例如中心的子空间用作传热区15，其余子空间均用作隔热区14。通过选择不同数量的隔热区14和/或传热区15，可控制加热盘11和冷却盘13之间分隔出的空间的传热效率。
又或者，隔离结构12还可以为具有中空腔的结构。
另外，对于隔离结构12的材质也可根据实际需求灵活选择。例如，隔离结构12由陶瓷材料制成。或者，隔离结构12由金属材料制成。
可选地，上述隔热区域的纵向高度小于等于1mm。纵向高度是指隔热区域在垂直于加热盘11和冷却盘13两者相对表面的方向上的高度。隔热区域的纵向高度的选择有利于合理地控制加热盘11与冷却盘13之间热量交换，避免加热盘11的热量过快、过多地被冷却盘13带走。本领域技术人员可根据具体的加热盘11加热温度需求，在不大于1mm的范围内选择合适的隔热区域的纵向高度。
可选地，隔离结构12采用隔热材料制成，隔离结构12的导热系数小于16W/m·K。选择合适导热系数的隔离结构12有利于减小隔离结构12对加热盘11的多余热量散失的影响。可根据具体的加热盘11的加热温度需求，选择由具有合适的导热系数材料制成的隔离结构12。
可选地，加热盘11与隔离结构12的接触面积不超过加热盘11在冷却盘13上正投影的面积的5％。也即，当加热盘11与隔离结构12相接触的部分的面积为e，加热盘11在冷却盘13上的正投影的面积为f时，e小于或等于f的5％。这种设置更有利于减小加热盘11、隔离结构12以及冷却盘13三者之间的接触面积，从而减少通过三者接触对加热盘11的热量散失的影响。可根据具体的加热盘11的加热温度需求，在不超过5％的范围内选择合 适的加热盘11与隔离结构12的接触面积和加热盘11与冷却盘13相对的表面积之间的比值，例如，可选为3％。
可选地，在冷却盘13的与隔热区14相对的表面上设置有第一凸起；和/或在加热盘11的与隔热区14相对的表面上设置有第二凸起。通过在冷却盘13上设置第一凸起，和/或在加热盘11上设置第二凸起，可调节隔热区14空间的大小，从而进一步调节隔热区14的传热速率。可根据实际需求选择仅在冷却盘13上设置第一凸起，或者仅在加热盘11上设置有第二凸起，或者在冷却盘13上设置第一凸起的同时，在加热盘11上设置第二凸起。
例如，如图3和图4所示，在冷却盘13的与隔热区14相对的表面上设置有第一凸起131。根据实际需求，第一凸起131在冷却盘13的表面上可构成不同的图形或图案。通过更换具有不同的高度和/或大小的第一凸起131的冷却盘，可改变隔热区14空间的大小，从而进一步调节隔热区14的传热速率。
可选地，冷却盘13内还可设有散热片132。散热片132可进一步提高冷却盘13的散热效率。散热片132的材质可为铝或石墨等。
可选地，承载装置1还包括连接件16。该连接件16可被设置为用于固定连接加热盘11和冷却盘13，从而将加热盘11和冷却盘13更可靠地固定在一起。连接件16可设置在加热盘11和冷却盘13的边缘区域。连接件16为可为空心螺栓或销等。
本发明另一实施例提供了一种半导体加工设备。如图5所示，该半导体加工设备包括腔室2和本发明的所提供的承载装置1，该承载装置1安装在腔室2内。
本发明的半导体加工设备，其通过采用上述承载装置1，不仅可以避免因温度过高而停止工艺，而且可以在整个工艺过程中维持温度均一稳定，从而可以为待加工工件提供合格稳定的工艺温度，最终可获得更佳的工艺结果。
可选地，工艺腔室2为真空腔。并且，承载装置1包括加热盘11和冷却盘13，二者间隔设置，且在加热盘11和冷却盘13之间形成有隔热区域。同时，承载装置1还包括隔离结构12，其设置在加热盘11和冷却盘13之间，以将隔热区域分隔为至少一个隔热区14和至少一个传热区15。并且，隔热区14传递的热量少于传热区15传递的热量。
在这种情况下，可选的，隔热区14与腔室2连通，也即是，隔热区14的真空度与腔室2的真空度相同。传热区15与腔室2的外界环境连通。腔室2的外界环境通常为大气环境。传热区15可通过连接管等结构与腔室2的外界环境连通。
加热盘11内可设有用于加热的加热元件111。加热元件111具体地可为加热丝。冷却盘13内设有冷却管道134，冷却管道134被设置用于冷却介质的流动。通常，可在半导体加工设备内设置与冷却管道134相连通的冷却管，以将冷却介质输入和输出冷却管道134。上述冷却介质可例如为冷却水等。
该半导体加工设备可为磁控溅射沉积设备。
常见的磁控溅射沉积设备内设置有靶材。溅射工艺时DC电源(直流电源)会施加偏压至靶材，使其相对于接地的工艺腔室2成为负压，在真空的环境下氩气放电而产生等离子体，负偏压同时能将带正电的氩离子吸引至靶材。当氩离子的能量足够高并在磁控管形成的磁场作用下轰击靶材时，会使金属原子逸出靶材表面，并通过扩散沉积在承载装置1的待加工工件上。
虽然已经通过例子对本发明的一些特定实施例进行了详细说明，但是本领域的技术人员应该理解，以上例子仅是为了进行说明，而不是为了限制本发明的范围。本领域的技术人员应该理解，可在不脱离本发明的范围和精神的情况下，对以上实施例进行修改。本发明的范围由所附权利要求来限定。

Claims (15)

  1. 一种承载装置，包括加热盘和冷却盘，其特征在于，所述加热盘和所述冷却盘间隔设置，且在所述加热盘和所述冷却盘之间形成有隔热区域。
  2. 根据权利要求1所述的承载装置，其特征在于，所述隔热区域为封闭空间；通过调节所述隔离区域中的气体压强，来调节传热速度。
  3. 根据权利要求1所述的承载装置，其特征在于，所述隔热区域与非大气环境连通；或者，所述隔热区域与大气环境连通。
  4. 根据权利要求1所述的承载装置，其特征在于，还包括隔热结构，所述隔热结构设置在所述加热盘和所述冷却盘之间，以将所述隔热区域分隔为至少一个隔热区和至少一个传热区。
  5. 根据权利要求4所述的承载装置，其特征在于，所述传热区域与大气环境连通；所述隔热区域与非大气环境连通。
  6. 根据权利要求4所述的承载装置，其特征在于，所述隔热区的气体压强小于所述传热区的气体压强。
  7. 根据权利要求4所述的承载装置，其特征在于，所述传热区在所述加热盘上的正投影面积和所述隔热区在所述加热盘上的正投影面积的比值范围为0.01-10。
  8. 根据权利要求4所述的承载装置，其特征在于，所述隔离结构包括环体，所述环体内侧的空间用作所述传热区与大气环境连通；所述环体外侧 的空间用作所述隔热区与非大气环境连通；或者，所述隔热结构包括内径不同，且互为同心环的多个环体，多个所述环体将所述隔热区域分隔为多个子空间，任意一个所述子空间用作所述隔热区或者传热区。
  9. 根据权利要求4所述的承载装置，其特征在于，所述隔离结构采用隔热材料制成，所述隔离结构的导热系数小于16W/m·K。
  10. 根据权利要求4所述的承载装置，其特征在于，所述加热盘与所述隔离结构的接触面积不超过所述加热盘在所述冷却盘上正投影的面积的5％。
  11. 根据权利要求4所述的承载装置，其特征在于，在所述冷却盘的与所述隔热区相对的表面上设置有第一凸起；和/或
    在所述加热盘的与所述隔热区相对的表面上设置有第二凸起。
  12. 根据权利要求4所述的承载装置，其特征在于，在所述冷却盘上设有大气通道，所述传热区通过所述大气通道与大气环境连通。
  13. 根据权利要求1所述的承载装置，其特征在于，所述隔热区域的纵向高度小于等于1mm。
  14. 根据权利要求1所述的承载装置，其特征在于，所述冷却盘内还设有散热片。
  15. 一种半导体加工设备，其特征在于，包括腔室和权利要求1至14任一项中所述的承载装置，所述承载装置安装在所述腔室内。
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