CN108987323A - 一种承载装置及半导体加工设备 - Google Patents

一种承载装置及半导体加工设备 Download PDF

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CN108987323A
CN108987323A CN201710413268.1A CN201710413268A CN108987323A CN 108987323 A CN108987323 A CN 108987323A CN 201710413268 A CN201710413268 A CN 201710413268A CN 108987323 A CN108987323 A CN 108987323A
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heating dish
bogey
heat transfer
cooler pan
separator
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CN108987323B (zh
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常青
李冰
赵梦欣
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Beijing Naura Microelectronics Equipment Co Ltd
Beijing North Microelectronics Co Ltd
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Beijing North Microelectronics Co Ltd
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Priority to TW107116465A priority patent/TWI701756B/zh
Priority to PCT/CN2018/086851 priority patent/WO2018223820A1/zh
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Abstract

本发明提供了一种承载装置及半导体加工设备。该承载装置包括加热盘、隔离件和冷却盘，其中，隔离件位于加热盘和冷却盘之间，以将加热盘和冷却盘之间的区域分隔为至少一个隔热区和至少一个传热区。本发明承载装置可实现加热盘与冷却盘的分离，且通过隔离件可将二者之间的区域分隔为至少一个隔热区和至少一个传热区，通过传热区的设置，可将工艺过程中由沉积到待加工工件的金属离子所导致的多余热量带走；同时通过隔热区的设置，可限制加热盘与冷却盘之间大量的热量传递，使得承载装置在整个工艺过程中维持温度均一稳定，从而可给待加工工件提供合格稳定的工艺温度，最终可获得更佳的工艺结果。

Description

一种承载装置及半导体加工设备
技术领域
本发明涉及半导体加工领域，更具体地，涉及一种承载装置及半导体加工设备。
背景技术
随着半导体行业的不断发展，半导体制程变得越来越多样化。无论是哪种制程，温度都是极其重要的一环，其直接影响到设备成本和产能。
通常，在加工半导体的过程中，需要将晶片放置到半导体加工设备的承载装置上。利用承载装置的加功能上将晶片加热到工艺温度，并在工艺过程中维持该工艺温度。
实际操作中，受工艺气体及工艺制程的影响，较难实现承载装置的温度的有效控制。例如，在物理气相沉积(PVD)工艺中，通过溅射(Sputtering)沉积技术将靶材上的离子沉积到晶片上。溅射后的金属离子温度过高，沉积过程中金属离子的热量会通过晶片传递到承载装置，使得承载装置的温度升高，导致工艺操作一段时间后必须停止工艺，以对承载装置进行降温。这种停止工艺降温的操作会极大的影响了生产成本和设备的产能。
发明内容
本发明旨在至少解决现有技术中存在的问题之一，提出了一种承载装置及半导体加工设备。该承载装置可实现加热盘与冷却盘的分离，且通过隔离件可将二者之间的区域分隔为至少一个隔热区和至少一个传热区，通过传热区的设置，可将工艺过程中由沉积到待加工工件的金属离子所导致的多余热量带走；同时通过隔热区的设置，可限制加热盘与冷却盘之间大量的热量传递，使得承载装置在整个工艺过程中维持温度均一稳定，从而可给待加工工件提供合格稳定的工艺温度，最终可获得更佳的工艺结果。
为实现本发明的目的而提供一种承载装置。该承载装置包括加热盘、隔离件和冷却盘，其中，所述隔离件位于所述加热盘和所述冷却盘之间，以将所述加热盘和所述冷却盘之间的区域分隔为至少一个隔热区和至少一个传热区。
可选地，所述隔热区的气体压强小于所述传热区的气体压强。
可选地，所述隔热区被设置为与非大气环境相连通；
所述传热区被设置为与大气环境相连通。
可选地，所述加热盘和所述冷却盘之间区域的纵向高度不大于1mm。
可选地，所述传热区在所述加热盘上的投影面积和所述隔热区在所述加热盘上的投影面积的比值范围为0.01-10。
可选地，所述隔离件具有环状结构。
可选地，所述隔离件采用隔热材料制成，所述隔离件的导热系数小于16W/m·K。
可选地，所述加热盘与所述隔离件的接触面积不超过所述加热盘在所述冷却盘上投影的面积的5％。
可选地，所述冷却盘形成所述隔热区的表面上设置有第一凸起；和/或
所述加热盘形成所述隔热区的表面上设置有第二凸起。
可选地，所述冷却盘内还设有散热片。
本发明还提供了一种半导体加工设备。该半导体加工设备包括工艺腔室和承载装置，该承载装置采用本发明中所述的承载装置，所述承载装置安装在所述工艺腔室内。
可选地，所述工艺腔室为真空腔，所述隔热区被设置为与所述工艺腔室相连通；
所述传热区被设置为与所述工艺腔室的外界环境相连通。
可选地，所述冷却盘上设有大气通道，所述大气通道被设置为用于将所述传热区与大气环境相连通。
本发明具有以下有益效果：
本发明的承载装置可实现加热盘与冷却盘的分离，且通过隔离件可将二者之间的区域分隔为至少一个隔热区和至少一个传热区，通过传热区的设置，可将工艺过程中由沉积到待加工工件的金属离子所导致的多余热量带走；同时通过隔热区的设置，可限制加热盘与冷却盘之间大量的热量传递，使得承载装置在整个工艺过程中维持温度均一稳定，从而可给待加工工件提供合格稳定的工艺温度，最终可获得更佳的工艺结果。
本发明的半导体加工设备，通过采用上述承载装置，有利于整个工艺过程中承载装置维持温度均一稳定，从而给待加工工件提供合格的工艺温度，最终可获得更佳的工艺结果。
通过以下参照附图对本发明的示例性实施例的详细描述，本发明的其它特征及其优点将会变得清楚。
附图说明
被结合在说明书中并构成说明书的一部分的附图示出了本发明的实施例，并且连同其说明一起用于解释本发明的原理。
图1为本发明一实施例中承载装置的剖示图。
图2为本发明另一实施例中承载装置的冷却盘和隔离件的俯视图。
图3为图2沿A-A向的剖示图。
图4为本发明半导体加工设备实施例的剖示图。
图中标示如下：
承载装置-1，加热盘-11，加热元件-111，隔离件-12，冷却盘-13，第一凸起-131，散热片-132，大气通道-133，冷却管道-134，隔热区-14，传热区-15，连接件-16，工艺腔室-2。
具体实施方式
现在将参照附图来详细描述本发明的各种示例性实施例。应注意到：除非另外具体说明，否则在这些实施例中阐述的部件和步骤的相对布置、数字表达式和数值不限制本发明的范围。
以下对至少一个示例性实施例的描述实际上仅仅是说明性的，决不作为对本发明及其应用或使用的任何限制。
对于相关领域普通技术人员已知的技术、方法和设备可能不作详细讨论，但在适当情况下，所述技术、方法和设备应当被视为说明书的一部分。
在这里示出和讨论的所有例子中，任何具体值应被解释为仅仅是示例性的，而不是作为限制。因此，示例性实施例的其它例子可以具有不同的值。
应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步讨论。
作为本发明的一个方面本发明提供了一种承载装置。
如图1所示，该承载装置1包括加热盘11、隔离件12和冷却盘13。隔离件11位于加热盘12和冷却盘13之间，以将加热盘11和冷却盘13之间的区域分隔为至少一个隔热区14和至少一个传热区15。
本发明的承载装置1可通过加热盘11与冷却盘13之间的区域进行热交换，有利于避免加热盘11与冷却盘13二者由于直接接触导致的加热盘11上的热量大量流失的问题。隔离件12可将加热盘11和冷却盘13之间的区域分隔为至少一个隔热区14和至少一个传热区15，通过传热区15的设置，可将工艺过程中由沉积到待加工工件的金属离子所导致的多余热量带走；同时通过隔热区14的设置，可限制加热盘11与冷却盘13之间大量的热量传递，使得承载装置1在整个工艺过程中维持温度均一稳定，从而可给待加工工件提供合格稳定的工艺温度，最终可获得更佳的工艺结果。
隔热区14和传热区15可通过传热差异来进行区别。具体地，传热区15相较于隔热区14可传递更多的热量。
承载装置1中的加热盘11上可直接承载待加工工件，也可承载托盘，待加工工件可放置在该托盘上。上述待加工工件通常为晶片或晶圆。加热盘11内设有用于加热的加热元件111，以对加热盘11上的待加工元件进行加热。加热元件111可为加热丝等任意实现加热效果的部件。
加热盘11、隔离件12和冷却盘13自上而下依次设置。隔离件12可将加热盘11支撑在冷却盘13上，从而在加热盘11和冷却盘13之间形成一定的区域。其中，隔离件12可具有多种设计，只要实现可将加热盘11和冷却盘13之间的区域分隔为至少一个隔热区14和至少一个传热区15即可。对于隔离件12的结构，也可根据实际需求灵活选择。例如，隔离件12可具有环状结构，即为隔离环。或者，隔离件12可具有块状结构。又或者，隔离件12为具有中空腔的结构。对于隔离件12的数量，也可根据需求灵活选择。例如，当隔离件12为隔离环时，可在加热盘11和冷却盘13之间设置一个隔离环。或者，可在加热盘11和冷却盘13之间设置多个以同心圆的方式排布的隔离环。对于隔离件12的材质也可根据实际需求灵活选择。例如，隔离件12由陶瓷材料制成。或者，隔离件12由金属材料制成。
通过不同结构和/或不同数量的隔离件12，可将加热盘11和冷却盘13之间的区域分隔成不同数量的隔热区14和传热区15。例如，当隔离件12具有环状结构，且隔离件12的数量为一个时，加热盘11和冷却盘13之间的区域被分隔为一个隔热区14和一个传热区15。又例如，当隔离件12具有环状结构，且隔离件12的数量为多个时，加热盘11和冷却盘13之间的区域被分隔为多个隔热区14和多个传热区15。通过选择不同数量的隔热区14和/或传热区15，可控制加热盘11和冷却盘13之间分隔出的空间的传热效率。
具体实施时，可通过控制隔热区14和传热区15内的气体压强来控制隔热区14和传热区15的传热速率，使得两者之间具有传热差异。可选地，隔热区14的气体压强小于传热区15的气体压强，从而使得传热区15的传热速率大于隔热区14的传热速率。优选地，可将隔热区14的气体压强控制为远小于标准大气压，将传热区15的气体压强控制为标准大气压。
隔热区14的气体压强与传热区15的气体压强之间的差异可通过多种方式实现。例如，可设置两个分别与隔热区14和传热区15相连通的泵，上述泵可为真空泵或空气泵等。通过真空泵的抽气或空气泵的吹气可控制实现隔热区14的气体压强和传热区15的气体压强的不同。又例如，可将隔热区14设置为与承载装置1所处的腔室相连通，将传热区15设置为与大气环境相连通。这样，承载装置1工作时隔热区14具有与腔室相同的真空度，传热区15内的气体压强等于大气环境的压强。
可选地，隔热区14被设置为与非大气环境相连通。该非大气环境可例如为承载装置1所处的工艺腔室的环境，或者是人为设置真空度的环境。传热区15被设置为与大气环境相连通。隔热区14与非大气环境相连通，传热区15与大气环境相连通传热效果好，易于实现，成本低。
可选地，加热盘11和冷却盘13之间区域的纵向高度不大于1mm。也即是，加热盘11和冷却盘13之间区域的纵向高度小于或等于1mm。纵向高度是指加热盘11和冷却盘13之间区域沿着垂直于加热盘11和冷却盘13两者相对表面的方向上的高度。加热盘11和冷却盘13之间区域的纵向高度的选择有利于合理地控制自加热盘11与冷却盘13之间热量交换，避免加热盘11的热量过快过多地被冷却盘13带走。本领域技术人员可根据具体的加热盘11加热温度需求，在不大于1mm的范围内选择合适的加热盘11和冷却盘13之间区域的纵向高度。
可选地，传热区15在加热盘11上的投影面积和隔热区14在加热盘11上的投影面积的比值范围为0.01-10。也即，当传热区15在加热盘11上的投影面积为a，隔热区14在加热盘11上的投影面积为b时，a与b的比值范围为0.01-10。传热区15在加热盘11上的投影面积和隔热区14在加热盘11上的投影面积的比值的范围选择，可有利于合理地控制自加热盘11传递出去的热量，避免加热盘11的热量过快过多地带走。可根据具体的加热盘11加热温度需求，在0.01-10的范围内选择合适的传热区15在加热盘11上的投影面积和隔热区14在加热盘11上的投影面积的比值。
进一步可选地，传热区15在加热盘11上的投影面积和隔热区14在加热盘11上的投影面积的比值范围为0.01-1。也即是，当传热区15在加热盘11上的投影面积为c，隔热区14在加热盘11上的投影面积为d时，c与d的比值范围为0.01-1。当传热区15在加热盘11上的投影面积和隔热区14在加热盘11上的投影面积的比值为0.01-1时，加热盘11的多余热量传递速率适中，有利于更高效地给待加工工件提供合格的工艺温度。
可选地，隔离件12具有环状结构。环状结构的隔离件2易于实施，成本较低。具体实施时，隔离件2可为O圈。
可选地，隔离件12采用隔热材料制成，隔离件的导热系数小于16W/m·K。选择合适导热系数的隔离件12有利于减小隔离件12对加热盘11的多余热量散失的影响。可根据具体的加热盘11的加热温度需求，选择由具有合适的导热系数材料制成的隔离件12。
可选地，加热盘11与隔离件12的接触面积不超过加热盘11在冷却盘13上投影的面积的5％。也即，当加热盘11与隔离件12相接触的部分的面积为e，加热盘11在冷却盘13上的投影的面积为f时，e小于或等于f的5％。这种设置更有利于减小加热盘11、隔离件12以及冷却盘13三者之间的接触面积，从而减少通过三者接触对加热盘11的热量散失的影响。可根据具体的加热盘11的加热温度需求，在不超过5％的范围内选择合适的加热盘11与隔离件12的接触面积和加热盘11与冷却盘13相对的表面积之间的比值，例如，可选为3％。
可选地，冷却盘13形成隔热区14的表面上设置有第一凸起；和/或加热盘11形成隔热区14的表面上设置有第二凸起。通过在冷却盘13上设置第一凸起或在加热盘11上设置第二凸起可调控隔热区14空间的大小，从而进一步调节隔热区14的传热速率。可根据实际需求选择仅在冷却盘13上设置第一凸起，或者仅在加热盘11上设置有第二凸起，或者在冷却盘13上设置第一凸起的同时，在加热盘11上设置第二凸起。
如图2和图3所示，冷却盘13形成隔热区14的表面上设置有第一凸起131。根据实际需求，第一凸起131在冷却盘13的表面上可构成不同的图形或图案。通过更换具有不同的高度和/或大小的第一凸起131的冷却盘，可改变隔热区14空间的大小，从而进一步调控隔热区14的传热速率。
可选地，冷却盘13内还可设有散热片132。散热片132可进一步提高冷却盘13的散热效率。散热片132的材质可为铝或石墨等。
可选地，承载装置1还包括连接件16。该连接件16可被设置为用于固定连接加热盘11和冷却盘13，从而将加热盘11和冷却盘13更可靠地固定在一起。连接件16可设置在加热盘11和冷却盘13的边缘区域。连接件16为可为空心螺栓或销等。
本发明另一实施例提供了一种半导体加工设备。如图4所示，该半导体加工设备包括工艺腔室2和本发明的所提供的承载装置1，该承载装置1安装在工艺腔室2内。
本发明的半导体加工设备，通过采用上述承载装置1，有利于整个工艺过程中承载装置1维持温度均一稳定，从而给待加工工件提供合格的工艺温度，最终可获得更佳的工艺结果。
可选地，工艺腔室2为真空腔，隔热区14被设置为与工艺腔室2相连通，也即是，隔热区14的真空度与工艺腔室2的真空度相同。传热区15被设置为与工艺腔室2的外界环境相连通。工艺腔室2的外界环境通常为大气环境。传热区15可通过连接管等结构与工艺腔室2的外界环境相连通。
可选地，冷却盘13上设有大气通道133，大气通道133被设置为用于将传热区15与大气环境相连通。传热区15通过冷却盘13的大气通道133与大气环境相连通的传热效果好，易于实现，成本低。
加热盘11内可设有用于加热的加热元件111。加热元件111具体地可为加热丝。冷却盘13内设有冷却管道134，冷却管道134被设置用于冷却介质的流动。通常，可在半导体加工设备内设置与冷却管道134相连通的冷却管，以将冷却介质输入和输出冷却管道134。上述冷却介质可例如为冷却水等。
该半导体加工设备可为磁控溅射沉积设备。
常见的磁控溅射沉积设备内设置有靶材。溅射工艺时DC电源(直流电源)会施加偏压至靶材，使其相对于接地的工艺腔室2成为负压，在真空的环境下氩气放电而产生等离子体，负偏压同时能将带正电的氩离子吸引至靶材。当氩离子的能量足够高并在磁控管形成的磁场作用下轰击靶材时，会使金属原子逸出靶材表面，并通过扩散沉积在承载装置1的待加工工件上。
虽然已经通过例子对本发明的一些特定实施例进行了详细说明，但是本领域的技术人员应该理解，以上例子仅是为了进行说明，而不是为了限制本发明的范围。本领域的技术人员应该理解，可在不脱离本发明的范围和精神的情况下，对以上实施例进行修改。本发明的范围由所附权利要求来限定。

Claims (13)

1.一种承载装置，其特征在于，包括加热盘、隔离件和冷却盘，其中，所述隔离件位于所述加热盘和所述冷却盘之间，以将所述加热盘和所述冷却盘之间的区域分隔为至少一个隔热区和至少一个传热区。
2.根据权利要求1所述的承载装置，其特征在于，所述隔热区的气体压强小于所述传热区的气体压强。
3.根据权利要求2所述的承载装置，其特征在于，所述隔热区被设置为与非大气环境相连通；
所述传热区被设置为与大气环境相连通。
4.根据权利要求1所述的承载装置，其特征在于，所述加热盘和所述冷却盘之间区域的纵向高度不大于1mm。
5.根据权利要求1所述的承载装置，其特征在于，所述传热区在所述加热盘上的投影面积和所述隔热区在所述加热盘上的投影面积的比值范围为0.01-10。
6.根据权利要求1所述的承载装置，其特征在于，所述隔离件具有环状结构。
7.根据权利要求6所述的承载装置，其特征在于，所述隔离件采用隔热材料制成，所述隔离件的导热系数小于16W/m·K。
8.根据权利要求1所述的承载装置，其特征在于，所述加热盘与所述隔离件的接触面积不超过所述加热盘在所述冷却盘上投影的面积的5％。
9.根据权利要求1所述的承载装置，其特征在于，所述冷却盘形成所述隔热区的表面上设置有第一凸起；和/或
所述加热盘形成所述隔热区的表面上设置有第二凸起。
10.根据权利要求1所述的承载装置，其特征在于，所述冷却盘内还设有散热片。
11.一种半导体加工设备，其特征在于，包括工艺腔室和权利要求1至10任一项中所述的承载装置，所述承载装置安装在所述工艺腔室内。
12.根据权利要求11所述的半导体加工设备，其特征在于，所述工艺腔室为真空腔，所述隔热区被设置为与所述工艺腔室相连通；
所述传热区被设置为与所述工艺腔室的外界环境相连通。
13.根据权利要求12所述的半导体加工设备，其特征在于，所述冷却盘上设有大气通道，所述大气通道被设置为用于将所述传热区与大气环境相连通。
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