WO2018214192A1 - 微发光二极管阵列基板的封装结构及其封装方法 - Google Patents

微发光二极管阵列基板的封装结构及其封装方法 Download PDF

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WO2018214192A1
WO2018214192A1 PCT/CN2017/089083 CN2017089083W WO2018214192A1 WO 2018214192 A1 WO2018214192 A1 WO 2018214192A1 CN 2017089083 W CN2017089083 W CN 2017089083W WO 2018214192 A1 WO2018214192 A1 WO 2018214192A1
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micro
emitting diode
light
diode array
micro light
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French (fr)
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陈黎暄
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a package structure of a micro light emitting diode array substrate and a packaging method thereof.
  • a micro-light-emitting diode is a device with a size ranging from a few micrometers to a few hundred micrometers. Since it is much smaller than a normal LED, it is possible to use a single LED as a pixel (Pixel) for display.
  • the Micro LED display is a display that uses a high-density Micro LED array as a display pixel array to realize image display. Like a large-sized outdoor LED display, each pixel can be addressed and individually driven to be lit. The reduced version of the outdoor LED display reduces the pixel distance from millimeters to micrometers.
  • Micro LED displays and organic light-emitting diode (OLED) displays are self-luminous displays, but compared to micro LED displays. OLED displays also have the advantages of better material stability, longer life, no image imprinting, etc., and are considered to be the biggest competitors of OLED displays.
  • Micro LED devices Due to lattice matching, Micro LED devices must be grown by molecular beam epitaxy on a sapphire-based supply substrate, followed by laser lift-off (LLO) technology to micro-light-emitting diode bare chips (bare chip) It is separated from the supply substrate, and then transferred to a receiving substrate on which a circuit pattern has been prepared in advance by a micro transfer printing (NTP) technique to form a Micro LED array, thereby forming a Micro LED display panel.
  • LLO laser lift-off
  • NTP micro transfer printing
  • the basic principle of micro transfer is roughly: using a patterned transfer head, such as a polydimethylsiloxane (PDMS) type transfer head having a convex structure, through a sticky PDMS
  • the transfer layer adsorbs the Micro LED bare chip from the supply substrate, and then aligns the PDMS transfer head with the receiving substrate, and then attaches the Micro LED bare chip adsorbed by the PDMS transfer head to the preset position of the receiving substrate. Then, the PDMS transfer head is peeled off from the receiving substrate to complete the transfer of the Micro LED bare chip to form a Micro LED array substrate.
  • the receiving substrate is a silicon substrate that has been prepared in advance to form a circuit pattern, which may be Flexibility can also be rigid.
  • An object of the present invention is to provide a package structure of a micro light-emitting diode array substrate, which can protect a micro light-emitting diode and a substrate driven therewith, and can improve the light-emitting effect of the micro light-emitting diode array substrate.
  • Another object of the present invention is to provide a method for packaging a micro light emitting diode array substrate, which can protect the micro light emitting diode and the substrate on which the micro light emitting diode is driven, and can improve the light emitting effect of the micro light emitting diode array substrate.
  • the present invention provides a package structure of a micro light emitting diode array substrate, comprising a substrate, a micro light emitting diode array disposed on the substrate, and a photoresist protection layer disposed on the substrate;
  • the micro-light-emitting diode array includes a plurality of micro-light-emitting diodes arranged in an array; the photoresist protection layer is provided with a plurality of array-arranged vias corresponding to the positions of the plurality of micro-light-emitting diodes, and the plurality of micro-light-emitting diodes Located in each of the plurality of via holes;
  • Each of the via holes is filled with a UV resin microlens having a convex surface on the upper surface; each of the UV resin microlenses respectively covers the micro light emitting diodes in the corresponding via holes.
  • the material of the photoresist protective layer and the material of the UV resin microlens are respectively one of a hydrophobic material and a hydrophilic material;
  • the material of the photoresist protective layer and the material of the UV resin microlens are both transparent materials.
  • the thickness of the photoresist protection layer is greater than 1/3 of the height of the micro light emitting diode.
  • Each of the vias respectively corresponds to one or more micro-light-emitting diodes, that is, one or more micro-light-emitting diodes are respectively accommodated in each of the via holes.
  • the shape of the via hole is a rectangle, a circle, or an ellipse.
  • the invention also provides a method for packaging a micro light emitting diode array substrate, comprising the following steps:
  • Step S1 providing a substrate, the substrate is provided with a micro light-emitting diode array, and coating a light-resisting layer on the substrate and the micro-light-emitting diode array;
  • the micro light emitting diode array includes a plurality of micro light emitting diodes arranged in an array
  • Step S2 exposing and developing the photoresist layer by using a mask, forming a plurality of array-arranged via holes corresponding to the positions of the plurality of micro-light-emitting diodes to obtain a photoresist protective layer, and the plurality of micro-lights Diodes are respectively located in the plurality of via holes;
  • Step S3 spraying UV resin droplets into the plurality of via holes, so that each via has a UV resin material, and the upper surface of the UV resin material in each via hole is convex, and then UV curing the UV resin material in the plurality of vias so that each via is
  • the UV resin material changes from a liquid state to a solid state, and a UV resin microlens having a convex surface on the upper surface is obtained for each via hole, and each of the UV resin microlenses respectively covers the micro light emitting diodes in the corresponding via holes.
  • the UV resin droplets are sprayed into the plurality of via holes by the inkjet printing apparatus, and the diameter of the printing head is smaller than the maximum aperture of the via hole.
  • the material of the photoresist protective layer and the material of the UV resin microlens are respectively one of a hydrophobic material and a hydrophilic material;
  • the material of the photoresist protective layer and the material of the UV resin microlens are both transparent materials.
  • the thickness of the photoresist protection layer is greater than 1/3 of the height of the micro light emitting diode.
  • Each of the plurality of via holes formed in the step S2 corresponds to one or more micro light emitting diodes, that is, each of the via holes respectively accommodates one or more micro light emitting diodes;
  • the shape is rectangular, circular, or elliptical.
  • the invention further provides a package structure of a micro light-emitting diode array substrate, comprising a substrate, a micro light-emitting diode array disposed on the substrate, and a photoresist protection layer disposed on the substrate;
  • the micro-light-emitting diode array includes a plurality of micro-light-emitting diodes arranged in an array; the photoresist protection layer is provided with a plurality of array-arranged vias corresponding to the positions of the plurality of micro-light-emitting diodes, and the plurality of micro-light-emitting diodes Located in each of the plurality of via holes;
  • Each via hole is filled with a UV resin microlens having a convex surface on the upper surface; each UV resin microlens respectively covers the micro light emitting diode in the corresponding via hole;
  • the material of the photoresist protective layer and the material of the UV resin microlens are respectively one of a hydrophobic material and a hydrophilic material;
  • the material of the photoresist protective layer and the material of the UV resin microlens are both transparent materials;
  • the thickness of the photoresist protection layer is greater than 1/3 of the height of the micro light emitting diode.
  • the package structure of the micro light-emitting diode array substrate of the present invention comprises a substrate, a micro light-emitting diode array, and a photoresist protection layer;
  • the micro-light-emitting diode array comprises a plurality of micro-light emitting diodes arranged in an array;
  • the photoresist layer is provided with a plurality of arrayed vias corresponding to the positions of the plurality of micro-light-emitting diodes, wherein the plurality of micro-light-emitting diodes are respectively located in the plurality of via holes; each of the via holes is filled with A UV resin microlens having a convex surface on the upper surface and covering the micro light-emitting diodes in the corresponding via holes; capable of protecting the micro light emitting diode and the substrate on which the micro light emitting diode is driven, and improving the light emitting effect of the micro light emitting diode array substrate.
  • the method for packaging the micro light-emitting diode array substrate of the present invention can protect the micro light-emitting diode and the substrate under which the micro light-emitting diode is driven, and can improve the light-emitting effect of the micro light-emitting diode array substrate, and the method is simple and easy.
  • FIG. 1 is a schematic view showing a package structure of a micro LED array substrate according to the present invention.
  • FIG. 2 is a schematic view showing the arrangement of vias of a shape on a photoresist protective layer in a package structure of a micro LED array substrate according to the present invention
  • FIG. 3 is a schematic view showing the arrangement of via holes of another shape on the photoresist protective layer in the package structure of the micro LED array substrate of the present invention
  • FIG. 4 is a schematic flow chart of a method for packaging a micro light emitting diode array substrate according to the present invention.
  • step S1 is a schematic diagram of step S1 of a method for packaging a micro light emitting diode array substrate according to the present invention
  • FIG. 6 is a schematic diagram of step S2 of the method of packaging the micro LED array substrate of the present invention.
  • the present invention firstly provides a package structure of a micro light emitting diode array substrate, comprising a substrate 1 , a micro light emitting diode array 3 disposed on the substrate 1 , and a photoresist protective layer disposed on the substrate 1 . 2;
  • the micro-light-emitting diode array 3 includes a plurality of arrays of micro-light-emitting diodes 31.
  • the photoresist layer 2 is provided with a plurality of arrays of vias 21 corresponding to the positions of the plurality of micro-light-emitting diodes 31.
  • a plurality of micro light emitting diodes 31 are respectively located in the plurality of via holes 21;
  • Each of the via holes 21 is filled with a UV resin microlens 41 having a convex surface on the upper surface; each of the UV resin microlenses 41 respectively covers the micro light emitting diodes 31 in the corresponding via holes 21, thereby all the UV resin microlenses 41 constitutes a UV resin microlens array.
  • the photoresist protective layer 2 on the substrate 1 and the UV resin microlens 41 together function to protect the micro light-emitting diode 31 and the substrate 1, and the UV resin microlens 41
  • the light path of the light emitted from the micro light-emitting diode 31 can be adjusted, and the UV resin microlens array is also advantageously pre-designed by computer simulation, so that the required light can be obtained by adjusting the thickness and size of the UV resin microlens 41.
  • the type distribution can further improve the light-emitting effect of the micro-light-emitting diode array substrate.
  • the material of the photoresist protective layer 2 and the material of the UV resin microlens 41 are both transparent materials.
  • the material of the photoresist protective layer 2 and the material of the UV resin microlens 41 are respectively One of the hydrophobic material and the hydrophilic material, that is, the material of the photoresist protective layer 2 and the material of the UV resin microlens 41 are always opposite in hydrophobicity, and then the material of the UV resin microlens 41 and the photoresist protective layer 2 are There may be a repulsive force; further, the UV resin microlens 41 is formed by ultraviolet (UV) curing in a corresponding via hole 21 via a low viscosity high transmittance UV resin material, thereby being fabricated in the UV resin microlens 41.
  • UV ultraviolet
  • the UV resin material filled in each via hole 21 has a repulsion force between the surface of the photoresist layer 2 and its own interfacial tension, and the upper surface will have a convex shape.
  • a UV resin microlens 41 having a convex shape on the upper surface can be formed.
  • the material of the photoresist protective layer 2 is a hydrophobic material
  • the UV resin material for forming the UV resin microlens 41 has a hydrophilic property
  • the upper surface of the UV resin material in each of the via holes 21 is convex, so that the UV resin microlens 41 has a convex upper surface.
  • the thickness of the photoresist layer 2 is greater than 1/3 of the height of the micro-light-emitting diode 31, that is, the via 21 on the photoresist layer 2 has a sufficient depth so that the UV resin microlens 41 In the manufacturing process, the UV resin material for forming the UV resin microlens 41 is defined in the specific via hole 21.
  • the substrate 1 is a TFT array substrate, and the micro light emitting diode array 3 is driven thereon, so that the package structure of the micro light emitting diode array substrate can be further used to fabricate a micro light emitting diode display.
  • each of the via holes 21 corresponds to one or more micro light-emitting diodes 31, that is, one or more micro light-emitting diodes 31 are respectively accommodated in each of the via holes 21, that is, each via hole 21 can correspond to One or more sub-pixel units in the micro-light-emitting diode display may also be pixel units corresponding to one or more.
  • the shape of the via hole 21 is a rectangle, a circle, or an ellipse; for example, as shown in FIG. 2, the shape of the via hole 21 is a rectangle, and each of the via holes 21 may be respectively associated with one or The plurality of micro-light-emitting diodes 31 correspond to each other; or, as shown in FIG. 3, the via holes 21 are elliptical in shape, and each of the via holes 21 may also correspond to one or more micro-light-emitting diodes 31, respectively.
  • the present invention further provides a method for packaging a micro LED array substrate, including the following steps:
  • Step S1 as shown in FIG. 5, a substrate 1 is provided.
  • the substrate 1 is provided with a micro light emitting diode array 3, and a transparent photoresist layer 2 is formed on the substrate 1 and the micro light emitting diode array 3. '.
  • the micro light emitting diode array 3 includes a plurality of micro light emitting diodes 31 arranged in an array.
  • the substrate 1 is a TFT array substrate, and the micro light emitting diode array 3 is driven thereon, so that the micro light emitting diode array substrate can be further used to fabricate a micro light emitting diode display after being packaged.
  • Step S2 as shown in FIG. 6, the photoresist layer 2 is exposed and developed by using a mask, and a plurality of arrays of via holes 21 are formed at positions corresponding to the plurality of micro-light-emitting diodes 31 to obtain a photoresist.
  • the protective layer 2, the plurality of micro light emitting diodes 31 are respectively located in the plurality of via holes 21.
  • each of the via holes 21 respectively corresponds to one or more micro light emitting diodes 31, that is, one or more micros are respectively accommodated in each of the via holes 21
  • the light emitting diode 31; the shape of the via hole 21 is rectangular, circular, or elliptical.
  • Step S3 spraying UV resin droplets into the plurality of via holes 21 such that each of the via holes 21 has a UV resin material, and the upper surface of the UV resin material in each via hole 21 is convex. And then UV-curing the UV resin material in the plurality of via holes 21 such that the UV resin material in each of the via holes 21 changes from a liquid state to a solid state, and an upper surface is convex corresponding to each of the via holes 21.
  • the UV resin microlenses 41 are formed, and each of the UV resin microlenses 41 respectively covers the micro light emitting diodes 31 in the corresponding via holes 21, thereby obtaining a package structure of the micro light emitting diode array substrate as shown in FIG.
  • the photoresist protective layer 2 on the substrate 1 and the UV resin microlens 41 together function to protect the micro light-emitting diode 31 and the substrate 1, and the UV resin microlens 41
  • the light emitted from the micro-light-emitting diode 31 can be optically adjusted, so that the required light distribution can be obtained by adjusting the thickness and size of the UV resin microlens 41, and the light-emitting effect of the micro-light-emitting diode array substrate can be improved.
  • the UV resin droplets are sprayed into the plurality of via holes 21 by the inkjet printing apparatus, and the diameter of the printing head is smaller than the maximum aperture of the via hole 21.
  • the inkjet printing apparatus sprays UV resin droplets into the plurality of via holes 21 by using a continuous inkjet printing system, and the UV resin microlens 41 in each of the via holes 41
  • the thickness can be adjusted by spraying the number of UV resin droplets within the respective vias 21, and the amount of sprayed UV resin droplets in each via 21 can be determined by computer analysis in a continuous inkjet printing system.
  • the material of the photoresist protective layer 2 and the material of the UV resin microlens 41 are respectively one of a hydrophobic material and a hydrophilic material; that is, a material of the photoresist protective layer 2 and a material for forming the UV
  • the hydrophilicity of the UV resin material of the resin microlens 41 is reversed, and then there is a repulsive force between the UV resin material and the photoresist layer 2. Therefore, in the step S3, the UV resin material filled in each via hole 21 has a repulsive force existing between the surface of the photoresist layer 2 and its own interfacial tension, and the upper surface is convex.
  • a UV resin microlens 41 having a convex shape on the upper surface can be formed.
  • the material of the photoresist protective layer 2 is a hydrophobic material
  • the UV resin material for forming the UV resin microlens 41 has a hydrophilic property
  • the upper surface of the UV resin material in each of the via holes 21 is convex, so that the UV resin microlens 41 has a convex upper surface.
  • the thickness of the photoresist layer 2 ′ formed in the step S1 is greater than 1/3 of the height of the micro light emitting diode 31 , that is, the thickness of the photoresist layer 2 obtained in step S2 is greater than the height of the micro light emitting diode 31 . 1/3 of the film, so that the via hole 21 on the photoresist layer 2 has a sufficient depth, and in the process of fabricating the UV resin microlens 41, the UV resin material for forming the UV resin microlens 41 is limited to a specific one. Among the through holes 21.
  • the package structure of the micro-light-emitting diode array substrate of the present invention comprises a substrate, a micro-light-emitting diode array, and a photoresist protection layer;
  • the micro-light-emitting diode array comprises a plurality of arrays of micro-light-emitting diodes;
  • the photoresist layer is provided with a plurality of array-arranged via holes corresponding to the positions of the plurality of micro-light-emitting diodes, wherein the plurality of micro-light-emitting diodes are respectively located in the plurality of via holes; each of the via holes is filled with one
  • the UV resin microlens having a convex surface on the upper surface and covering the micro light-emitting diodes in the corresponding via holes can protect the micro light emitting diode and the substrate on which the micro light emitting diode is driven, and can improve the light emitting effect of the micro light emitting diode array substrate.
  • the method for packaging the micro light-emitting diode array substrate of the present invention can protect the micro light-emitting diode and the substrate under which the micro light-emitting diode is driven, and can improve the light-emitting effect of the micro light-emitting diode array substrate, and the method is simple and easy.

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Abstract

提供一种微发光二极管阵列基板的封装结构及其封装方法。微发光二极管阵列基板的封装结构包括基板（1）、微发光二极管阵列（3）、及光阻保护层（2）；微发光二极管阵列包括数个阵列排布的微发光二极管（31）；光阻保护层（2）对应数个微发光二极管（31）的位置设有数个阵列排布的过孔（21），数个微发光二极管（31）分别位于数个过孔（21）当中；每一过孔（21）内均填充有一个上表面呈凸起状的并覆盖相应过孔（21）内微发光二极管（31）的UV树脂微透镜（41）；能够保护微发光二极管（31）及其下方对其驱动的基板（1），并能够改善微发光二极管阵列基板的发光效果。

Description

微发光二极管阵列基板的封装结构及其封装方法 技术领域
本发明涉及显示技术领域，尤其涉及一种微发光二极管阵列基板的封装结构及其封装方法。
背景技术
微发光二极管(Micro LED)是一种尺寸在几微米到几百微米之间的器件，由于其较普通LED的尺寸要小很多，从而使得单一的LED作为像素(Pixel)用于显示成为可能，Micro LED显示器便是一种以高密度的Micro LED阵列作为显示像素阵列来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，Micro LED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但Micro LED显示器相比于OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。
由于晶格匹配的原因，Micro LED器件必须先在蓝宝石类的供给基板上通过分子束外延的方法生长出来，随后通过激光剥离(Laser lift-off，LLO)技术将微发光二极管裸芯片(bare chip)从供给基板上分离开，然后通过微转印(Micro Transfer Print，NTP)技术将其转移到已经预先制备完成电路图案的接受基板上，形成Micro LED阵列，进而做成Micro LED显示面板。其中，微转印的基本原理大致为：使用具有图案化的传送头(Transfer head)，例如具有凸起结构的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)类传送头，通过具有粘性的PDMS传送层(Transfer layer)将Micro LED bare chip从供给基板吸附起来，然后将PDMS传送头与接受基板进行对位，随后将PDMS传送头所吸附的Micro LED bare chip贴附到接受基板预设的位置上，再将PDMS传送头从接受基板上剥离，即可完成Micro LED bare chip的转移，形成Micro LED阵列基板，进一步地，所述接受基板是已经预先制备完成电路图案的硅基板，其可以为柔性也可以为刚性。
在现有Micro LED显示面板的制作过程中，为了保护Micro LED及其下方的驱动基板，并改善Micro LED阵列的发光效果，提出一种新的Micro LED阵列基板的封装结构及其封装方法，是本领域亟需解决的技术问题之 一。
发明内容
本发明的目的在于提供一种微发光二极管阵列基板的封装结构，能够保护微发光二极管及其下方对其进行驱动的基板，并能够改善微发光二极管阵列基板的发光效果。
本发明的目的还在于提供一种微发光二极管阵列基板的封装方法，能够保护微发光二极管及其下方对其进行驱动的基板，并能够改善微发光二极管阵列基板的发光效果。
为实现上述目的，本发明提供了一种微发光二极管阵列基板的封装结构，包括基板、设于所述基板上的微发光二极管阵列、设于所述基板上的光阻保护层；
所述微发光二极管阵列包括数个阵列排布的微发光二极管；所述光阻保护层对应所述数个微发光二极管的位置设有数个阵列排布的过孔，所述数个微发光二极管分别位于所述数个过孔当中；
每一过孔内均填充有一个上表面呈凸起状的UV树脂微透镜；每一UV树脂微透镜分别覆盖相应过孔内的微发光二极管。
所述光阻保护层的材料与UV树脂微透镜的材料分别为疏水材料和亲水材料中的一种；
所述光阻保护层的材料与UV树脂微透镜的材料均为透明材料。
所述光阻保护层的厚度大于所述微发光二极管的高度的1/3。
每一过孔分别与一个或多个微发光二极管相对应，即每一过孔内分别容置有一个或多个微发光二极管。
所述过孔的形状为长方形、圆形、或椭圆形。
本发明还提供一种微发光二极管阵列基板的封装方法，包括如下步骤：
步骤S1、提供基板，所述基板上设有微发光二极管阵列，在所述基板、及微发光二极管阵列上涂布形成一层光阻层；
所述微发光二极管阵列包括数个阵列排布的微发光二极管；
步骤S2、利用掩膜板对所述光阻层进行曝光显影，在对应所述数个微发光二极管的位置形成数个阵列排布的过孔，得到光阻保护层，所述数个微发光二极管分别位于所述数个过孔当中；
步骤S3、向所述数个过孔内喷涂UV树脂微液滴，使得每一过孔内均具有UV树脂材料，且每一过孔内的UV树脂材料的上表面均呈凸起状，然后对所述数个过孔内的UV树脂材料进行紫外光固化，使得每一过孔内的 UV树脂材料由液态变为固态，对应每一过孔得到一个上表面呈凸起状的UV树脂微透镜，每一UV树脂微透镜分别覆盖相应过孔内的微发光二极管。
所述步骤S3中通过喷墨打印设备的喷印头向所述数个过孔内喷涂UV树脂微液滴，所述喷印头的直径小于所述过孔的最大孔径。
所述光阻保护层的材料与UV树脂微透镜的材料分别为疏水材料和亲水材料中的一种；
所述光阻保护层的材料与UV树脂微透镜的材料均为透明材料。
所述光阻保护层的厚度大于所述微发光二极管的高度的1/3。
所述步骤S2形成的数个过孔中，每一过孔分别与一个或多个微发光二极管相对应，即每一过孔内分别容置有一个或多个微发光二极管；所述过孔的形状为长方形、圆形、或椭圆形。
本发明还提供一种微发光二极管阵列基板的封装结构，包括基板、设于所述基板上的微发光二极管阵列、设于所述基板上的光阻保护层；
所述微发光二极管阵列包括数个阵列排布的微发光二极管；所述光阻保护层对应所述数个微发光二极管的位置设有数个阵列排布的过孔，所述数个微发光二极管分别位于所述数个过孔当中；
每一过孔内均填充有一个上表面呈凸起状的UV树脂微透镜；每一UV树脂微透镜分别覆盖相应过孔内的微发光二极管；
其中，所述光阻保护层的材料与UV树脂微透镜的材料分别为疏水材料和亲水材料中的一种；
所述光阻保护层的材料与UV树脂微透镜的材料均为透明材料；
其中，所述光阻保护层的厚度大于所述微发光二极管的高度的1/3。
本发明的有益效果：本发明的微发光二极管阵列基板的封装结构，包括基板、微发光二极管阵列、及光阻保护层；所述微发光二极管阵列包括数个阵列排布的微发光二极管；所述光阻保护层对应所述数个微发光二极管的位置设有数个阵列排布的过孔，所述数个微发光二极管分别位于所述数个过孔当中；每一过孔内均填充有一个上表面呈凸起状的并覆盖相应过孔内微发光二极管的UV树脂微透镜；能够保护微发光二极管及其下方对其进行驱动的基板，并能够改善微发光二极管阵列基板的发光效果。本发明的微发光二极管阵列基板的封装方法，能够保护微发光二极管及其下方对其进行驱动的基板，并能够改善微发光二极管阵列基板的发光效果，且方法简单易行。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为本发明微发光二极管阵列基板的封装结构的示意图；
图2为本发明微发光二极管阵列基板的封装结构中光阻保护层上一种形状的过孔的排布示意图；
图3为本发明微发光二极管阵列基板的封装结构中光阻保护层上另一种形状的过孔的排布示意图；
图4为本发明微发光二极管阵列基板的封装方法的流程示意图；
图5为本发明微发光二极管阵列基板的封装方法的步骤S1的示意图；
图6为本发明微发光二极管阵列基板的封装方法的步骤S2的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明首先提供一种微发光二极管阵列基板的封装结构，包括基板1、设于所述基板1上的微发光二极管阵列3、设于所述基板1上的光阻保护层2；
所述微发光二极管阵列3包括数个阵列排布的微发光二极管31；所述光阻保护层2对应所述数个微发光二极管31的位置设有数个阵列排布的过孔21，所述数个微发光二极管31分别位于所述数个过孔21当中；
每一过孔21内均填充有一个上表面呈凸起状的UV树脂微透镜41；每一UV树脂微透镜41分别覆盖相应过孔21内的微发光二极管31，从而所有的UV树脂微透镜41构成UV树脂微透镜阵列。
本发明的微发光二极管阵列基板的封装结构，基板1上的光阻保护层2与UV树脂微透镜41共同起到保护微发光二极管31、及基板1的作用，且所述UV树脂微透镜41可对微发光二极管31发出的光线进行光路调节，同时所述UV树脂微透镜阵列也有利于通过计算机模拟进行预设计，从而通过对UV树脂微透镜41的厚度及尺寸的调整可得到需要的光型分布，进而能够改善微发光二极管阵列基板的发光效果。
具体地，所述光阻保护层2的材料与UV树脂微透镜41的材料均为透明材料。
具体地，所述光阻保护层2的材料与UV树脂微透镜41的材料分别为 疏水材料和亲水材料中的一种，即光阻保护层2的材料与UV树脂微透镜41的材料亲疏水性总是相反，那么UV树脂微透镜41的材料与光阻保护层2之间便会存在相排斥的力；进一步地，所述UV树脂微透镜41经由低粘度高透过率的UV树脂材料在相应过孔21内经紫外光(UV)固化形成，从而在UV树脂微透镜41制作过程中，每一过孔21内填充的UV树脂材料在与光阻保护层2表面之间所存在的斥力、及其本身界面张力的共同作用下，上表面会呈现出凸起状，那么经紫外光固化后便可形成上表面呈凸起状的UV树脂微透镜41。例如当光阻保护层2的材料为疏水材料，而用于形成UV树脂微透镜41的UV树脂材料具有亲水特性时，由于光阻保护层2表面的疏水性和UV树脂材料本身界面张力的存在，使得每一过孔21内的UV树脂材料的上表面均呈凸起状，进而使得UV树脂微透镜41具有呈凸起状的上表面。
具体地，所述光阻保护层2的厚度大于所述微发光二极管31的高度的1/3，即使得光阻保护层2上的过孔21具有足够的深度，从而在UV树脂微透镜41的制作过程中，用于形成UV树脂微透镜41的UV树脂材料被限定在特定的过孔21当中。
具体地，所述基板1为TFT阵列基板，以对其上的微发光二极管阵列3进行驱动，从而所述微发光二极管阵列基板的封装结构，可进一步用于制作微发光二极管显示器。
具体地，每一过孔21分别与一个或多个微发光二极管31相对应，即每一过孔21内分别容置有一个或多个微发光二极管31，也即每一过孔21可以对应于微发光二极管显示器中的一个或多个的子像素(sub-pixel)单元，也可以是对应于一个或多个的像素(pixel)单元。
具体地，所述过孔21的形状为长方形、圆形、或椭圆形等形状；例如，如图2所示，所述过孔21的形状为长方形，每一过孔21可分别与一个或多个微发光二极管31相对应；或者，如图3所示，所述过孔21的形状为椭圆形，每一过孔21同样也可分别与一个或多个微发光二极管31相对应。
请参阅图4，基于上述的微发光二极管阵列基板的封装结构，本发明还提供一种微发光二极管阵列基板的封装方法，包括如下步骤：
步骤S1、如图5所示，提供基板1，所述基板1上设有微发光二极管阵列3，在所述基板1、及微发光二极管阵列3上涂布形成一层透明的光阻层2’。
具体地，所述微发光二极管阵列3包括数个阵列排布的微发光二极管31。
具体地，所述基板1为TFT阵列基板，以对其上的微发光二极管阵列3进行驱动，从而所述微发光二极管阵列基板进行封装后，可进一步用于制作微发光二极管显示器。
步骤S2、如图6所示，利用掩膜板对所述光阻层2进行曝光显影，在对应所述数个微发光二极管31的位置形成数个阵列排布的过孔21，得到光阻保护层2，所述数个微发光二极管31分别位于所述数个过孔21当中。
具体地，所述步骤S2形成的数个过孔21中，每一过孔21分别与一个或多个微发光二极管31相对应，即每一过孔21内分别容置有一个或多个微发光二极管31；所述过孔21的形状为长方形、圆形、或椭圆形。
步骤S3、向所述数个过孔21内喷涂UV树脂微液滴，使得每一过孔21内均具有UV树脂材料，且每一过孔21内的UV树脂材料的上表面均呈凸起状，然后对所述数个过孔21内的UV树脂材料进行紫外光固化，使得每一过孔21内的UV树脂材料由液态变为固态，对应每一过孔21得到一个上表面呈凸起状的UV树脂微透镜41，每一UV树脂微透镜41分别覆盖相应过孔21内的微发光二极管31，从而得到如图1所示的微发光二极管阵列基板的封装结构。
本发明的微发光二极管阵列基板的封装方法，基板1上的光阻保护层2与UV树脂微透镜41共同起到保护微发光二极管31、及基板1的作用，且所述UV树脂微透镜41可对微发光二极管31发出的光线进行光路调节，从而通过对UV树脂微透镜41的厚度及尺寸的调整可得到需要的光型分布，进而能够改善微发光二极管阵列基板的发光效果。
具体地，所述步骤S3中通过喷墨打印设备的喷印头向所述数个过孔21内喷涂UV树脂微液滴，所述喷印头的直径小于所述过孔21的最大孔径。
具体地，所述步骤S3中，所述喷墨打印设备采用连续性喷墨打印系统向所述数个过孔21内喷涂UV树脂微液滴，每一过孔21内的UV树脂微透镜41的厚度可以通过在相应过孔21内喷涂UV树脂微液滴的数量进行调整，而每一过孔21内喷涂UV树脂微液滴的数量可通过连续性喷墨打印系统中计算机分析得出。
具体地，所述光阻保护层2的材料与UV树脂微透镜41的材料分别为疏水材料和亲水材料中的一种；即所述光阻保护层2的材料与用于形成所述UV树脂微透镜41的UV树脂材料的亲疏水性相反，那么UV树脂材料与光阻保护层2之间便会存在相排斥的力。从而在所述步骤S3中，每一过孔21内填充的UV树脂材料在与光阻保护层2表面之间所存在的斥力、及其本身界面张力的共同作用下，上表面会呈现出凸起状，经紫外光固化后 便可形成上表面呈凸起状的UV树脂微透镜41。例如当光阻保护层2的材料为疏水材料，而用于形成UV树脂微透镜41的UV树脂材料具有亲水特性时，由于光阻保护层2表面的疏水性和UV树脂材料本身界面张力的存在，使得每一过孔21内的UV树脂材料的上表面均呈凸起状，进而使得UV树脂微透镜41具有呈凸起状的上表面。
具体地，所述步骤S1形成的光阻层2’的厚度大于微发光二极管31的高度的1/3，也即步骤S2得到的光阻保护层2的厚度大于所述微发光二极管31的高度的1/3，从而使得光阻保护层2上的过孔21具有足够的深度，在UV树脂微透镜41的制作过程中，用于形成UV树脂微透镜41的UV树脂材料被限定在特定的过孔21当中。
综上所述，本发明的微发光二极管阵列基板的封装结构，包括基板、微发光二极管阵列、及光阻保护层；所述微发光二极管阵列包括数个阵列排布的微发光二极管；所述光阻保护层对应所述数个微发光二极管的位置设有数个阵列排布的过孔，所述数个微发光二极管分别位于所述数个过孔当中；每一过孔内均填充有一个上表面呈凸起状的并覆盖相应过孔内微发光二极管的UV树脂微透镜；能够保护微发光二极管及其下方对其进行驱动的基板，并能够改善微发光二极管阵列基板的发光效果。本发明的微发光二极管阵列基板的封装方法，能够保护微发光二极管及其下方对其进行驱动的基板，并能够改善微发光二极管阵列基板的发光效果，且方法简单易行。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (13)

  1. 一种微发光二极管阵列基板的封装结构，包括基板、设于所述基板上的微发光二极管阵列、设于所述基板上的光阻保护层；
    所述微发光二极管阵列包括数个阵列排布的微发光二极管；所述光阻保护层对应所述数个微发光二极管的位置设有数个阵列排布的过孔，所述数个微发光二极管分别位于所述数个过孔当中；
    每一过孔内均填充有一个上表面呈凸起状的UV树脂微透镜；每一UV树脂微透镜分别覆盖相应过孔内的微发光二极管。
  2. 如权利要求1所述的微发光二极管阵列基板的封装结构，其中，所述光阻保护层的材料与UV树脂微透镜的材料分别为疏水材料和亲水材料中的一种；
    所述光阻保护层的材料与UV树脂微透镜的材料均为透明材料。
  3. 如权利要求1所述的微发光二极管阵列基板的封装结构，其中，所述光阻保护层的厚度大于所述微发光二极管的高度的1/3。
  4. 如权利要求1所述的微发光二极管阵列基板的封装结构，其中，每一过孔分别与一个或多个微发光二极管相对应，即每一过孔内分别容置有一个或多个微发光二极管。
  5. 如权利要求1所述的微发光二极管阵列基板的封装结构，其中，所述过孔的形状为长方形、圆形、或椭圆形。
  6. 一种微发光二极管阵列基板的封装方法，包括如下步骤：
    步骤S1、提供基板，所述基板上设有微发光二极管阵列，在所述基板、及微发光二极管阵列上涂布形成一层光阻层；
    所述微发光二极管阵列包括数个阵列排布的微发光二极管；
    步骤S2、利用掩膜板对所述光阻层进行曝光显影，在对应所述数个微发光二极管的位置形成数个阵列排布的过孔，得到光阻保护层，所述数个微发光二极管分别位于所述数个过孔当中；
    步骤S3、向所述数个过孔内喷涂UV树脂微液滴，使得每一过孔内均具有UV树脂材料，且每一过孔内的UV树脂材料的上表面均呈凸起状，然后对所述数个过孔内的UV树脂材料进行紫外光固化，使得每一过孔内的UV树脂材料由液态变为固态，对应每一过孔得到一个上表面呈凸起状的UV树脂微透镜，每一UV树脂微透镜分别覆盖相应过孔内的微发光二极管。
  7. 如权利要求6所述的微发光二极管阵列基板的封装方法，其中，所 述步骤S3中通过喷墨打印设备的喷印头向所述数个过孔内喷涂UV树脂微液滴，所述喷印头的直径小于所述过孔的最大孔径。
  8. 如权利要求6所述的微发光二极管阵列基板的封装方法，其中，所述光阻保护层的材料与UV树脂微透镜的材料分别为疏水材料和亲水材料中的一种；
    所述光阻保护层的材料与UV树脂微透镜的材料均为透明材料。
  9. 如权利要求6所述的微发光二极管阵列基板的封装方法，其中，所述光阻保护层的厚度大于所述微发光二极管的高度的1/3。
  10. 如权利要求6所述的微发光二极管阵列基板的封装方法，其中，所述步骤S2形成的数个过孔中，每一过孔分别与一个或多个微发光二极管相对应，即每一过孔内分别容置有一个或多个微发光二极管；所述过孔的形状为长方形、圆形、或椭圆形。
  11. 一种微发光二极管阵列基板的封装结构，包括基板、设于所述基板上的微发光二极管阵列、设于所述基板上的光阻保护层；
    所述微发光二极管阵列包括数个阵列排布的微发光二极管；所述光阻保护层对应所述数个微发光二极管的位置设有数个阵列排布的过孔，所述数个微发光二极管分别位于所述数个过孔当中；
    每一过孔内均填充有一个上表面呈凸起状的UV树脂微透镜；每一UV树脂微透镜分别覆盖相应过孔内的微发光二极管；
    其中，所述光阻保护层的材料与UV树脂微透镜的材料分别为疏水材料和亲水材料中的一种；
    所述光阻保护层的材料与UV树脂微透镜的材料均为透明材料；
    其中，所述光阻保护层的厚度大于所述微发光二极管的高度的1/3。
  12. 如权利要求11所述的微发光二极管阵列基板的封装结构，其中，每一过孔分别与一个或多个微发光二极管相对应，即每一过孔内分别容置有一个或多个微发光二极管。
  13. 如权利要求11所述的微发光二极管阵列基板的封装结构，其中，所述过孔的形状为长方形、圆形、或椭圆形。
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