WO2018211764A1 - Superconducting wire material, superconducting coil, superconducting magnet, and superconducting device - Google Patents

Superconducting wire material, superconducting coil, superconducting magnet, and superconducting device Download PDF

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Publication number
WO2018211764A1
WO2018211764A1 PCT/JP2018/006499 JP2018006499W WO2018211764A1 WO 2018211764 A1 WO2018211764 A1 WO 2018211764A1 JP 2018006499 W JP2018006499 W JP 2018006499W WO 2018211764 A1 WO2018211764 A1 WO 2018211764A1
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superconducting
wire
superconducting material
layer
particles
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PCT/JP2018/006499
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French (fr)
Japanese (ja)
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康太郎 大木
永石　竜起
加藤　丈晴
大作 横江
司 平山
雄一 幾原
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住友電気工業株式会社
一般財団法人ファインセラミックスセンター
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Publication of WO2018211764A1 publication Critical patent/WO2018211764A1/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B12/00—Superconductive or hyperconductive conductors, cables, or transmission lines
    • H01B12/02—Superconductive or hyperconductive conductors, cables, or transmission lines characterised by their form
    • H01B12/06—Films or wires on bases or cores
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F6/00—Superconducting magnets; Superconducting coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F6/00—Superconducting magnets; Superconducting coils
    • H01F6/06—Coils, e.g. winding, insulating, terminating or casing arrangements therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H10N60/81—Containers; Mountings

Definitions

  • the present invention relates to a superconducting wire, a superconducting coil, a superconducting magnet, and a superconducting device.
  • the present application claims priority based on Japanese Patent Application No. 2017-099668, which is a Japanese patent application filed on May 19, 2017. All the descriptions described in the Japanese patent application are incorporated herein by reference.
  • Patent Document 1 includes a first wire including a first superconducting material layer, a second wire including a second superconducting material layer, a first superconducting material layer, and a first superconducting material layer.
  • a superconducting wire provided with a superconducting material joining layer that joins two superconducting material layers is disclosed.
  • the superconducting wire includes a first wire having a first superconducting material layer, a second wire having a second superconducting material layer, and a superconducting material bonding layer. Part of the first wire and part of the second wire are joined via the superconducting material joining layer so that the first superconducting material layer and the second superconducting material layer are overlapped.
  • the superconducting material bonding layer at least one of a plurality of particles functioning as a pinning center and a plurality of voids is dispersed.
  • the superconducting coil according to one aspect of the present invention includes the superconducting wire according to one aspect of the present invention.
  • the superconducting wire is wound around the central axis of the superconducting coil.
  • a superconducting magnet includes a superconducting coil according to an aspect of the present invention, a cryostat that houses the superconducting coil, and a refrigerator that cools the superconducting coil.
  • the superconducting device includes the superconducting magnet according to one aspect of the present invention.
  • FIG. 1 is a schematic sectional view of a superconducting wire according to the first embodiment.
  • FIG. 2 is a schematic partial enlarged cross-sectional view of region II shown in FIG.
  • FIG. 3 is a schematic partial enlarged sectional view of region III shown in FIG.
  • FIG. 4 is a diagram showing an SEM image of the cross-sectional structure of the superconducting material bonding layer.
  • FIG. 5 is a flowchart showing a method of manufacturing a superconducting wire according to the first embodiment.
  • FIG. 6 is a schematic cross-sectional view of the superconducting wire according to the second embodiment.
  • FIG. 7 is a schematic partial enlarged sectional view of region VII shown in FIG.
  • FIG. 8 is a schematic cross-sectional view of a superconducting magnet according to the third embodiment.
  • FIG. 9 is a schematic cross-sectional view of a superconducting device according to the fourth embodiment.
  • An object of one embodiment of the present invention is to provide superconducting characteristics in a magnetic field of a superconducting wire including a superconducting material joining layer that joins a first superconducting material layer of a first wire and a second superconducting material layer of a second wire. Is to improve.
  • An object of one aspect of the present invention is to provide a superconducting coil, a superconducting magnet, and a superconducting device including such a superconducting wire.
  • Superconducting wires 1 and 1b (see FIGS. 1 and 6) according to an aspect of the present invention have a first wire 10 having a first superconducting material layer 13 and a second superconducting material layer 23.
  • a second wire 20 and superconducting material bonding layers 40 and 42 are provided.
  • the superconducting material bonding layers 40 and 42 are formed so that the part 17 of the first wire 10 and the part 27 of the second wire 20 overlap the first superconducting material layer 13 and the second superconducting material layer 23. It is joined via.
  • at least one of a plurality of particles 44 functioning as a pinning center and a plurality of voids 46 (see FIG. 3) is dispersed.
  • the particles 44 and the voids 46 dispersed in the superconducting material bonding layers 40 and 42 function as pinning centers. Therefore, in the magnetic field of the superconducting material bonding layers 40 and 42 The critical current density Jc can be improved. Thereby, the superconducting characteristic in the magnetic field of the superconducting wire 1 and 1b can be improved.
  • the embodiment of the present invention includes a case where the first wire 10 and the second wire 20 are a common wire. For example, this is the case when a part 17 of the first wire 10 constitutes one end of one wire, and a part 27 of the second wire 20 constitutes the other end of the one wire. Applicable. This embodiment can be applied in a situation where a superconducting coil is formed by winding the one wire.
  • the area ratio of the plurality of particles 44 and the plurality of voids 46 per unit area in the cross section in the thickness direction of the superconducting material bonding layers 40 and 42 is 1% or more and 70% or less. It is.
  • the area ratio of the particles 44 and the voids 46 per unit cross-sectional area of the superconducting material bonding layer 40 is the area of the particles 44 and the voids 46 with respect to the area of the observation region of 10 ⁇ m ⁇ the thickness of the superconducting material bonding layer.
  • the ratio of The area of the particle 44 and the void 46 refers to the total value of the cross-sectional areas of all the particles 44 and the void 46 detected in the observation region.
  • each of the plurality of particles 44 and the plurality of voids 46 has a particle size of 10 nm to 2000 nm.
  • each of the particles 44 and the voids 46 can sufficiently function as a pinning center without interrupting the superconductor in the superconducting material bonding layers 40 and 42.
  • the particle size of the particles 44 refers to the long diameter of the particles 44 (or the voids 46) measured from an image (two-dimensional planar projection image) obtained by SEM.
  • the superconducting material bonding layers 40 and 42 are formed of RE 1 Ba 2 Cu 3 O y (where RE: rare earth element, Ba: barium, Cu: copper). , O: oxygen), and the plurality of particles 44 include RE 2 O 3 .
  • RE 2 O 3 (RE oxide) precipitated from the crystal can function as a pinning center in the superconducting material bonding layers 40 and 42 formed of the RE123-based oxide superconductor. Since RE 2 O 3 is dispersed in the superconducting material bonding layers 40 and 42, a high pinning function can be obtained.
  • the superconducting material bonding layer is composed of an RE123-based oxide superconductor, and the plurality of particles 44 include CuO.
  • CuO (copper oxide) precipitated from the crystal can function as a pinning center in the superconducting material bonding layers 40 and 42 formed of the RE123-based oxide superconductor. Since CuO is dispersed in the superconducting material bonding layers 40 and 42, a high pinning function can be obtained.
  • a superconducting coil 70 (see FIG. 8) according to an aspect of the present invention is a superconducting coil having a central axis, and includes the superconducting wires 1 and 1b according to the above (1) to (5).
  • the superconducting wires according to the above (1) to (5) are wound around the central axis.
  • the superconducting coil 70 according to the above (6) can generate a strong magnetic field.
  • a superconducting magnet 100 (see FIG. 8) according to one aspect of the present invention includes a superconducting coil 70 according to (6) above, a cryostat 105 that houses the superconducting coil 70, and a refrigerator 102 that cools the superconducting coil 70. With.
  • the superconducting magnet 100 according to the above (6) can generate a strong magnetic field.
  • a superconducting device 200 (see FIG. 9) according to an aspect of the present invention includes the superconducting magnet 100 according to (7) above.
  • the superconducting device 200 according to the above (8) can generate a strong magnetic field.
  • FIG. 1 is a schematic cross-sectional view of superconducting wire 1 according to the first embodiment.
  • FIG. 2 is a schematic partial enlarged cross-sectional view of region II shown in FIG.
  • the superconducting wire 1 mainly includes a first wire 10, a second wire 20, and a superconducting material bonding layer 40.
  • the first wire 10 includes a first superconducting material layer 13 having a first main surface 13s. Specifically, the first wire 10 is provided on the first metal substrate 11, the first intermediate layer 12 provided on the first metal substrate 11, and the first intermediate layer 12. The first superconducting material layer 13 may be included.
  • the second wire 20 includes a second superconducting material layer 23 having a second main surface 23s. Specifically, the second wire 20 is provided on the second metal substrate 21, the second intermediate layer 22 provided on the second metal substrate 21, and the second intermediate layer 22. The second superconducting material layer 23 may be included.
  • Each of the first metal substrate 11 and the second metal substrate 21 may be an oriented metal substrate.
  • An oriented metal substrate means a substrate in which crystal orientations are aligned with respect to the biaxial direction in the plane of the substrate surface.
  • the oriented metal substrate may be a clad type metal substrate in which, for example, a nickel layer and a copper layer are arranged on a SUS or Hastelloy (registered trademark) base metal substrate.
  • the first intermediate layer 12 may be made of a material that has extremely low reactivity with the first superconducting material layer 13 and does not deteriorate the superconducting characteristics of the first superconducting material layer 13.
  • the second intermediate layer 22 may be made of a material that has extremely low reactivity with the second superconducting material layer 23 and does not deteriorate the superconducting characteristics of the second superconducting material layer 23.
  • Each of the first intermediate layer 12 and the second intermediate layer 22 includes, for example, YSZ (yttrium stabilized zirconia), CeO 2 (cerium oxide), MgO (magnesium oxide), Y 2 O 3 (yttrium oxide), Al It may be composed of at least one of 2 O 3 (aluminum oxide), LaMnO 3 (lanthanum manganese oxide), and SrTiO 3 (strontium titanate).
  • YSZ yttrium stabilized zirconia
  • CeO 2 cerium oxide
  • MgO magnesium oxide
  • Y 2 O 3 yttrium oxide
  • Al It may be composed of at least one of 2 O 3 (aluminum oxide), LaMnO 3 (lanthanum manganese oxide), and SrTiO 3 (strontium titanate).
  • Each of the first intermediate layer 12 and the second intermediate layer 22 may be composed of a plurality of layers.
  • a non-oriented substrate whose surface is not oriented and crystallized such as a SUS substrate or a Hastelloy substrate
  • the first intermediate layer 12 and the second intermediate substrate 12 The layer 22 may be a crystal orientation layer formed by, for example, an IBAD (Ion Beam Assisted Deposition) method.
  • IBAD Ion Beam Assisted Deposition
  • the first intermediate layer 12 reduces the difference in crystal orientation between the first metal substrate 11 and the first superconducting material layer 13. Also good.
  • the second metal substrate 21 has crystal orientation on its surface
  • the second intermediate layer 22 reduces the difference in crystal orientation between the second metal substrate 21 and the second superconducting material layer 23. Also good.
  • the first superconducting material layer 13 is a portion of the first wire 10 through which a superconducting current flows.
  • the second superconducting material layer 23 is a portion of the second wire 20 through which a superconducting current flows.
  • the first superconducting material layer 13 and the second superconducting material layer 23 are not particularly limited, but may be composed of an oxide superconducting material.
  • the first superconducting material layer 13 may be made of RE1 1 Ba 2 Cu 3 O y1 (6.0 ⁇ y1 ⁇ 8.0, where RE1 represents a rare earth element).
  • the second superconducting material layer 23 may be composed of RE2 1 Ba 2 Cu 3 O y2 (6.0 ⁇ y2 ⁇ 8.0, where RE2 represents a rare earth element).
  • RE2 may be the same as or different from RE1. More specifically, RE1 and RE2 may each be yttrium (Y), gadolinium (Gd), samarium (Sm), or holmium (Ho). More specifically, y1 and y2 may be 6.8 or more and 7.0 or less, respectively.
  • the first superconducting material bonding layer 40 includes a first portion 17 of the first main surface 13 s of the first superconducting material layer 13 and a second portion of the second main surface 23 s of the second superconducting material layer 23. 27 is joined.
  • the first superconducting material bonding layer 40 is not particularly limited, but may be composed of an oxide superconducting material.
  • the first superconducting material bonding layer 40 may be made of RE3 1 Ba 2 Cu 3 O y3 (6.0 ⁇ y3 ⁇ 8.0, where RE3 represents a rare earth element).
  • RE3 may be the same as or different from RE1.
  • RE3 may be the same as or different from RE2.
  • RE3 is yttrium (Y), gadolinium (Gd), dysprosium (Dy), europium (Eu), lanthanum (La), neodymium (Nd), erbium (Er), thulium (Tm), ytterbium. (Yb), lutetium (Lu), samarium (Sm) or holmium (Ho) may be used. More specifically, y3 may be 6.8 or more and 7.0 or less.
  • FIG. 3 is a schematic partial enlarged sectional view of region III shown in FIG.
  • a plurality of particles 44 and a plurality of voids 46 are dispersed in the superconducting material bonding layer 40.
  • the plurality of particles 44 include at least one of RE3 2 O 3 and CuO.
  • Each of the particles 44 and the voids 46 can function as a magnetic flux pinning point (hereinafter referred to as “pinning center”) in the superconducting material bonding layer 40.
  • the pinning center functions to prevent the movement of the magnetic flux lines by capturing and fixing (pinning) the magnetic flux lines that have entered the superconducting material bonding layer 40 under a magnetic field.
  • the critical current density Jc in the magnetic field of the superconducting material bonding layer 40 can be improved.
  • the superconducting characteristic in the magnetic field of the superconducting wire 1 can be improved.
  • the interface between the normal conducting particles and the void crystal grains functions as a pinning center. Therefore, if at least one of the particles 44 and the voids 46 is dispersed in the superconducting material bonding layer 40, the critical current density Jc in the magnetic field is improved. It becomes possible.
  • FIG. 4 shows the result of observing the cross-sectional structure of the superconducting material bonding layer 40 with a scanning electron microscope (SEM).
  • FIG. 4 is a cross-sectional SEM image of region III shown in FIG. 3 in superconducting wire 1 in which RE1, RE2, and RE3 are all Gd.
  • Gd 2 O 3 particles are formed in the superconducting material bonding layer 40.
  • the particles of Gd 2 O 3 can function as pinning centers.
  • the particle size of each of the particles 44 and the voids 46 included in the superconducting material bonding layer 40 is preferably 10 nm or more and 1000 nm or less. If the size of the particles 44 and the voids 46 is too small, the surface area of the particles 44 and the voids 46 becomes small, so that the function as the pinning center cannot be sufficiently exhibited. On the other hand, if the size of the particles 44 and the voids 46 is too large, the oxide superconductor in the superconducting material bonding layer 40 is disconnected by the particles 44 and the voids 46, and the superconducting characteristics of the superconducting wire 1 may be degraded. .
  • the particle size of particles (or voids) refers to the long diameter of particles (or voids) measured from an image (two-dimensional planar projection image) obtained by SEM.
  • the area ratio of the particles 44 and the voids 46 per unit cross-sectional area of the superconducting material bonding layer 40 is preferably 2% or more and 70% or less. If the area ratio of the particles 44 and the voids 46 is too low, a sufficient amount of pinning centers cannot be obtained. On the other hand, if the area ratio of the particles 44 and the voids 46 is too high, the density of the oxide superconductor constituting the superconducting material bonding layer 40 is lowered, and there is a possibility that the superconducting characteristics such as the critical current Ic are deteriorated.
  • the area ratio of the particles 44 and the voids 46 per unit cross-sectional area of the superconducting material bonding layer 40 is the area of the particles 44 and the voids 46 with respect to the area of the observation region of 10 ⁇ m ⁇ superconducting material bonding layer 40 thickness.
  • the ratio of The area of the particle 44 and the void 46 refers to the total value of the cross-sectional areas of all the particles 44 and the void 46 detected in the observation region.
  • first superconducting material layer 13 and second superconducting material layer 23 is a microcrystal composed of the material of first superconducting material bonding layer 40.
  • the method of manufacturing superconducting wire 1 includes a microcrystal generation step (S10), a bonding step (S20), and a heating and pressing step (S30).
  • S10 microcrystal generation step
  • S20 bonding step
  • S30 heating and pressing step
  • the microcrystal production step (S10) includes a coating film formation step (S11), a temporary combustion formation step (S12), and a temporary fired film decomposition step (S13). After performing the temporary fired film decomposition step (S12), the bonding step (S20) is performed. Then, through the main combustion treatment step as the heating and pressurizing step (S30), the superconducting material bonding layer 40 including the oxide superconductor shown in FIG. The superconducting wire 1 is manufactured by joining the superconducting material layer 13 and the second superconducting material layer 23 together. Hereinafter, each process is demonstrated in order.
  • Microcrystal production process In the microcrystal production process (S10), as shown below, it passes through a coating-film formation process (S11), a temporary combustion formation process (S12), and a temporary baking film
  • (A) Coating film forming step In the coating film forming step (S11), on at least one of the first portion 17 of the first superconducting material layer 13 and the second portion 27 of the second superconducting material layer 23, A solution containing a metal organic compound constituting the first superconducting material bonding layer 40 is applied and then dried to form a coating film.
  • a raw material solution in the MOD method that is, an organic compound of an element constituting RE3 1 Ba 2 Cu 3 O y which is a material of the first superconducting material bonding layer 40 (for example, organic A solution in which a metal compound or an organometallic complex) is dissolved in an organic solvent is used.
  • the organic compound may be an organic compound not containing fluorine.
  • the coating method include a die coating method and an inkjet method, but other coating methods may be employed.
  • the coating is applied to the entire surface of at least one of the first portion 17 and the second portion 27, and the thickness of the coating film is appropriately set.
  • the raw material solution is prepared with each of the RE3, Ba, and Cu organometallic compounds so that the composition ratio of RE3, Ba, and Cu (RE3: Ba: Cu) is a: 2: b. It is prepared by dissolving in a solvent.
  • the composition ratio (RE3: Ba: Cu) refers to an atomic concentration ratio (molar ratio) of RE3, Ba, and Cu.
  • the composition ratio of the superconducting material bonding layer 40 to be formed can be controlled by adjusting the composition ratio of the raw material solution.
  • a is preferably selected within a range satisfying 1 ⁇ a ⁇ 1.5, It is more preferable to select within the range of 1.1 ⁇ a ⁇ 1.3.
  • b is preferably selected within a range satisfying 3 ⁇ b ⁇ 3.5, and more preferably selected within a range satisfying 3.1 ⁇ b ⁇ 3.4.
  • the total cation concentration of RE3 3+ , Ba 2+ and Cu 2+ in the raw material solution is 1 mol / L.
  • the composition ratio (RE: Ba: Cu) is 1: 2: 3.
  • at least one of the RE atom concentration and the Cu atom concentration is made higher than that of this general RE123-based oxide superconductor.
  • oxide particles such as RE3 2 O 3 and CuO can be precipitated in the superconducting material bonding layer 40.
  • RE3 2 O 3 and CuO constitute a plurality of particles 44 dispersed in the superconducting material bonding layer 40 and have a pinning function. That is, by increasing at least one of the RE atom concentration and the Cu atom concentration, the pinning center can be efficiently introduced into the superconducting material bonding layer 40.
  • the density of the RE123-based oxide superconductor in the superconducting material bonding layer 40 decreases, so that there is a possibility that the superconducting characteristics may deteriorate instead.
  • the pinning centers can be appropriately dispersed in the superconducting material bonding layer 40 without deteriorating the superconducting characteristics.
  • the dried coating film is heat-treated at the first temperature.
  • the first temperature is equal to or higher than the decomposition temperature of the organometallic compound and lower than the temperature at which the oxide superconductor constituting the first superconducting material bonding layer 40 is generated.
  • the organometallic compound of the coating film is thermally decomposed to become a precursor of the oxide superconductor (hereinafter, a film containing this precursor is referred to as “calcined film”).
  • the precursor of the oxide superconductor includes, for example, BaCO 3 which is a carbon compound of Ba, RE3 2 O 3 which is a rare earth element oxide, and CuO.
  • the pre-combustion process may be performed, for example, in an atmosphere having a temperature of about 500 ° C. (first temperature) and an oxygen concentration of 20% or more.
  • the calcined film pyrolysis step (S13) the calcined film is heated at a second temperature higher than the first temperature, and the carbon compound contained in the calcined film is changed. Thermally decompose. 650 degreeC or more and 800 degrees C or less may be sufficient as 2nd temperature, for example.
  • the carbon compound contained in the calcined film is thermally decomposed to obtain an oxide superconductor constituting the first superconducting material bonding layer 40.
  • the calcined film pyrolysis step (S13) is performed in an atmosphere having a first oxygen concentration.
  • the first oxygen concentration is 1% to 100% (oxygen partial pressure 1 atm).
  • the microcrystal grows and the average grain size of the microcrystal becomes larger than 300 nm.
  • Heating and pressing step In the heating and pressing step (S30), heat is applied while applying pressure to the first wire 10 and the second wire 20. Specifically, the first wire 10 and the second wire 20 are pressed against each other by applying pressure to the first wire 10 and the second wire 20 at a pressure of 1 MPa or more using a pressing jig. In this state, the first wire 10, the second wire 20, and the microcrystal are heated at a third temperature and in an atmosphere having a second oxygen concentration.
  • the third temperature is equal to or higher than the second temperature and equal to or higher than the temperature at which the oxide superconductor constituting the first superconductive material bonding layer 40 is generated.
  • the second oxygen concentration is lower than the first oxygen concentration.
  • the second oxygen concentration may be 100 ppm, for example.
  • the microcrystals generated in the pre-baked film pyrolysis step (S20) grow to generate the first superconducting material bonding layer 40 composed of crystals having a large particle size.
  • the A microcrystal grows along the crystal orientation of at least one of the first superconducting material layer 13 and the second superconducting material layer 23 on which the coating film has been formed in the coating film forming step (S11).
  • the material bonding layer 40 is obtained.
  • the first superconducting material layer 13 of the first wire 10 and the second superconducting material layer 23 of the second wire 20 are joined to each other via the first superconducting material joining layer 40.
  • the voids 46 can be dispersed and formed in the first superconducting material bonding layer 40.
  • the particle size of the void 46 is preferably 10 nm or more and 1000 nm or less.
  • the particle size of the microcrystal formed in the pre-baked film pyrolysis step (S13) and / or the third temperature and the second temperature in the heating and pressurizing step (S30) are prepared. It can be controlled by adjusting conditions such as oxygen concentration.
  • the pre-fired film pyrolysis step (S13) includes fine crystals having a particle size of 100 nm or more and 300 nm or less.
  • the second temperature may be 650 ° C. or higher and 800 ° C. or lower.
  • the first oxygen concentration may be 50% or more and 100% or less.
  • the second oxygen concentration may be 50 ppm or more and 0.01% or less.
  • the method for manufacturing the superconducting wire 1 according to the present embodiment may further include an oxygen annealing step (S40).
  • the oxygen annealing step (S40) is performed at a fourth temperature and in an atmosphere having a third oxygen concentration.
  • the fourth temperature is equal to or lower than the third temperature.
  • the fourth temperature may be 200 ° C. or higher and 500 ° C. or lower.
  • the third oxygen concentration is higher than the second oxygen concentration.
  • the third oxygen concentration may be, for example, 100% (oxygen partial pressure 1 atm).
  • oxygen can be sufficiently supplied to the first superconducting material layer 13, the first superconducting material bonding layer 40, and the second superconducting material layer.
  • Superconducting wire 1 according to the present embodiment can be manufactured through the above steps.
  • a first superconducting material bonding layer that joins the first superconducting material layer 13 of the first wire 10 and the second superconducting material layer 23 of the second wire 20.
  • At least one of the plurality of particles 44 and the plurality of voids 46 is dispersed in 40 (see FIG. 3). According to this, since at least one of the plurality of particles 44 and the plurality of voids 46 functions as a pinning center in the superconducting material bonding layer 40, the critical current density Jc in the magnetic field can be improved. As a result, the superconducting characteristic in the magnetic field of the superconducting wire 1 can be improved.
  • FIG. 6 is a schematic cross-sectional view of superconducting wire 1 according to the second embodiment.
  • FIG. 7 is a schematic partial enlarged sectional view of region VII shown in FIG.
  • the superconducting wire 1b according to the present embodiment has the same configuration as the superconducting wire 1 according to the first embodiment and has the same effect, but is mainly different in the following points.
  • the superconducting wire 1b according to the present embodiment further includes a third wire 30 and a second superconducting material bonding layer 42.
  • the third wire 30 includes a third superconducting material layer 33 having a third main surface 33s. Specifically, the third wire 30 is provided on the third metal substrate 31, the third intermediate layer 32 provided on the third metal substrate 31, and the third intermediate layer 32. The third superconducting material layer 33 may be included. The third wire 30 may be configured in the same manner as the first wire 10.
  • the third metal substrate 31 may be an oriented metal substrate.
  • An oriented metal substrate means a metal substrate having a uniform crystal orientation on the surface of the metal substrate.
  • the oriented metal substrate may be, for example, a clad type metal substrate in which a nickel layer, a copper layer, and the like are arranged on a SUS or Hastelloy (registered trademark) base metal substrate.
  • the third intermediate layer 32 may be made of a material that has extremely low reactivity with the third superconducting material layer 33 and does not deteriorate the superconducting characteristics of the third superconducting material layer 33.
  • the third intermediate layer 32 may be composed of, for example, at least one of YSZ, CeO 2 , MgO, Y 2 O 3 , Al 2 O 3 , LaMnO 3 , Gd 2 Zr 2 O 7 and SrTiO 3 .
  • the third intermediate layer 32 may be composed of a plurality of layers.
  • the third intermediate layer 32 may be a crystal orientation layer formed by, for example, an IBAD method.
  • the third intermediate layer 32 reduces the difference in crystal orientation between the third metal substrate 31 and the third superconducting material layer 33. Also good.
  • the third superconducting material layer 33 is a portion of the third wire 30 through which the superconducting current flows.
  • the third superconducting material layer 33 is not particularly limited, but may be composed of an oxide superconducting material.
  • the third superconducting material layer 33 may be made of RE4 1 Ba 2 Cu 3 O y4 (6.0 ⁇ y4 ⁇ 8.0, where RE4 represents a rare earth element).
  • RE4 may be the same as or different from RE1.
  • RE4 may be the same as or different from RE2. More specifically, RE4 may be Y, Gd, Sm, or Ho. More specifically, y4 may be 6.8 or more and 7.0 or less.
  • the second length of the second wire 20 in the longitudinal direction of the second wire 20 is the first length of the first wire 10 and the length of the third wire 30 in the longitudinal direction of the first wire 10. Shorter than the third length of the third wire 30 in the direction.
  • the first wire 10 has a first end face 10e.
  • the third wire 30 has a second end face 30e.
  • the second end surface 30e is opposed to the first end surface 10e with a space between the second end surface 30e and the first end surface 10e.
  • the first main surface 13 s of the first superconducting material layer 13 and the second main surface 23 s of the second superconducting material layer 23 are bonded to each other through the first superconducting material bonding layer 40.
  • the second main surface 23 s of the second superconducting material layer 23 and the third main surface 33 s of the third superconducting material layer 33 are joined to each other via the second superconducting material joining layer 42.
  • the second wire 20 straddles the first end surface 10 e of the first wire 10 and the second end surface 30 e of the third wire 30.
  • the second superconducting material layer 23 bridges the first superconducting material layer 13 and the third superconducting material layer 33.
  • the second superconducting material bonding layer 42 includes a third portion 28 of the second main surface 23 s of the second superconducting material layer 23 and a fourth portion of the third main surface 33 s of the third superconducting material layer 33. 38 is joined.
  • the third portion 28 is different from the second portion 27.
  • the second superconducting material bonding layer 42 is not particularly limited, but may be composed of an oxide superconducting material.
  • the second superconducting material bonding layer 42 may be made of RE5 1 Ba 2 Cu 3 O y5 (6.0 ⁇ y5 ⁇ 8.0, where RE5 represents a rare earth element).
  • RE5 may be the same as RE2, or may be different.
  • RE5 may be the same as RE3 or different.
  • RE5 may be the same as RE4 or different. More specifically, RE5 may be Y, Gd, Dy, Eu, La, Nd, Er, Tm, Yb, Lu, Sm or Ho. More specifically, y5 may be 6.8 or more and 7.0 or less.
  • the method of joining the second superconducting material layer 23 and the third superconducting material layer 33 through the second superconducting material joining layer 42 is the same as that of the first superconducting material joining layer 40 in the first embodiment. This is the same as the method of joining the first superconducting material layer 13 and the second superconducting material layer 23 (see FIG. 5).
  • the superconducting wire 1b according to the present embodiment has the same effects as the superconducting wire 1 according to the first embodiment as follows.
  • the first superconducting material bonding layer 40 that joins the first superconducting material layer 13 and the second superconducting material layer 23, and the second superconducting material layer 23 and the second superconducting material layer 23.
  • each of the second superconducting material joining layers 42 joining the three superconducting material layers 33 at least one of the plurality of particles 44 and the plurality of voids 46 is dispersed.
  • at least one of the plurality of particles 44 and the plurality of voids 46 functions as a pinning center, so that the critical current density Jc in the magnetic field of each superconducting material bonding layer can be improved.
  • the superconducting characteristic in the magnetic field of the superconducting wire 1b can be improved.
  • the superconducting wire 1b may be applied to a superconducting coil that can be used in the permanent current mode.
  • the superconducting closed loop circuit may be configured by connecting the first wire 10 and the third wire 30 to a superconducting coil (not shown).
  • Superconducting magnet 100 includes a superconducting coil 70 including any of superconducting wires 1 and 1b according to the first and second embodiments, a cryostat 105 housing superconducting coil 70, and a refrigeration for cooling superconducting coil 70.
  • the superconducting magnet 100 may further include a heat shield 106 held inside the cryostat 105 and a magnetic shield 140.
  • superconducting coil 70 one of superconducting wires 1 and 1b according to the first and second embodiments is wound around the central axis of superconducting coil 70.
  • Superconducting coil body 110 including superconducting coil 70 is housed in cryostat 105.
  • Superconducting coil body 110 is held inside heat shield 106.
  • Superconducting coil body 110 includes a plurality of superconducting coils 70, an upper support portion 114, and a lower support portion 111.
  • a plurality of superconducting coils 70 are stacked. The upper and lower end surfaces of the superconducting coils 70 stacked are arranged so that the upper support portion 114 and the lower support portion 111 sandwich the upper end surface and the lower end surface.
  • a cooling plate 113 is disposed on the upper end surface of the superconducting coil 70 that is laminated and on the lower end surface of the superconducting coil 70 that is laminated.
  • a cooling plate (not shown) is also disposed between the superconducting coils 70 adjacent to each other.
  • One end of the cooling plate 113 is connected to the second cooling head 131 of the refrigerator 102.
  • a cooling plate (not shown) disposed between the superconducting coils 70 adjacent to each other is also connected to the second cooling head 131 at one end thereof.
  • the first cooling head 132 of the refrigerator 102 may be connected to the wall portion of the heat shield 106. Therefore, the wall portion of the heat shield 106 can also be cooled by the refrigerator 102.
  • the lower support part 111 of the superconducting coil body 110 has a size larger than the planar shape of the superconducting coil 70.
  • the lower support portion 111 is fixed to the heat shield 106 by a plurality of support members 115.
  • the plurality of support members 115 are rod-shaped members, and connect the upper wall of the heat shield 106 and the outer peripheral portion of the lower support portion 111.
  • a plurality of support members 115 are arranged on the outer periphery of the superconducting coil body 110. Support members 115 are arranged to surround superconducting coil 70 at the same interval.
  • the heat shield 106 that holds the superconducting coil body 110 is connected to the cryostat 105 by the connecting portion 120.
  • the connecting portions 120 are arranged at equal intervals along the outer peripheral portion of the superconducting coil body 110 so as to surround the central axis of the superconducting coil body 110.
  • the connection part 120 connects the lid body 135 of the cryostat 105 and the upper wall of the heat shield 106.
  • the refrigerator 102 is arranged so as to extend from the upper part of the lid 135 of the cryostat 105 to the inside of the heat shield 106.
  • the refrigerator 102 cools the superconducting coil body 110.
  • the main body 133 and the motor 134 of the refrigerator 102 are disposed above the upper surface of the lid 135.
  • the refrigerator 102 is arranged so as to reach the inside of the heat shield 106 from the main body 133.
  • the refrigerator 102 may be, for example, a Gifford McMahon refrigerator.
  • the refrigerator 102 is connected through a pipe 137 to a compressor (not shown) that compresses the refrigerant.
  • the refrigerant for example, helium gas
  • the refrigerant is expanded by a displacer driven by a motor 134, whereby the regenerator material provided in the refrigerator 102 is cooled.
  • the refrigerant which has become low pressure due to expansion, is returned to the compressor and is increased in pressure again.
  • the first cooling head 132 of the refrigerator 102 cools the heat shield 106 to prevent external heat from entering the heat shield 106.
  • the second cooling head 131 of the refrigerator 102 cools the superconducting coil 70 via the cooling plate 113.
  • the superconducting coil 70 is in a superconducting state.
  • the cryostat 105 includes a cryostat main body 136 and a lid body 135.
  • the periphery of the main body 133 and the motor 134 is surrounded by a magnetic shield 140.
  • the magnetic shield 140 can prevent a part of the magnetic field generated from the superconducting coil body 110 from entering the motor 134.
  • the superconducting magnet 100 is formed with an opening 107 that penetrates the cryostat 105 and the heat shield 106 and reaches the bottom wall of the cryostat main body 136 from the lid body 135 of the cryostat 105.
  • the opening 107 is disposed so as to penetrate the central portion of the superconducting coil 70 of the superconducting coil body 110.
  • a detected body 210 (see FIG. 13) is disposed inside the opening 107, and a magnetic field generated from the superconducting coil body 110 is applied to the detected body 210.
  • Superconducting coil 70 of the present embodiment includes superconducting coil 70 including any of superconducting wires 1 and 1b according to the first and second embodiments. Any of superconducting wires 1 and 1b according to the first and second embodiments is wound around the central axis of the superconducting coil. Therefore, the superconducting coil 70 of the present embodiment can generate a strong magnetic field.
  • Superconducting magnet 100 of the present embodiment includes a superconducting coil 70 including any of superconducting wires 1 and 1b according to the first and second embodiments, a cryostat 105 that accommodates superconducting coil 70, and a refrigerator that cools superconducting coil 70. 102. Therefore, superconducting magnet 100 according to the present embodiment can generate a strong magnetic field.
  • Superconducting device 200 may be, for example, a magnetic resonance imaging (MRI) apparatus.
  • MRI magnetic resonance imaging
  • Superconducting device 200 mainly includes superconducting magnet 100 according to the third embodiment.
  • Superconducting device 200 according to the present embodiment may further include a movable table 202 and a control unit 208.
  • the movable table 202 includes a top plate 205 on which the detected object 210 is placed and a drive unit 204 that moves the top plate 205.
  • the control unit 208 is connected to the superconducting magnet 100 and the drive unit 204.
  • the control unit 208 drives the superconducting magnet 100 to generate a uniform magnetic field in the opening 107 of the superconducting magnet 100.
  • the control unit 208 moves the movable table 202 and causes the detected object 210 placed on the movable table 202 to enter the opening 107 of the superconducting magnet 100.
  • the control unit 208 moves the movable table 202 and causes the detected object 210 placed on the movable table 202 to exit from the opening 107 of the superconducting magnet 100.
  • Superconducting device 200 according to the present embodiment includes superconducting magnet 100. Therefore, superconducting device 200 according to the present embodiment can generate a strong magnetic field. Using the superconducting device 200 according to the present embodiment, the detected object 210 can be accurately imaged.
  • Embodiment 1-4 disclosed this time is illustrative in all respects and not restrictive.
  • the scope of the present invention is shown not by the above-described first to fifth embodiments but by the scope of claims, and is intended to include meanings equivalent to the scope of claims and all modifications within the scope.
  • 1, 1b superconducting wire 10 first wire, 10e first end face, 11 first metal substrate, 12 first intermediate layer, 13 first superconducting material layer, 13s first main surface, 17 first Part 20, 20 second wire, 21 second metal substrate, 22 second intermediate layer, 23 second superconducting material layer, 23s second main surface, 27 second part, 28 third part, 30 3rd wire, 30e 2nd end face, 31 3rd metal substrate, 32 3rd intermediate layer, 33 3rd superconducting material layer, 33s 3rd main surface, 38 4th part, 40 1st Superconducting material joining layer, 42 second superconducting material joining layer, 70 superconducting coil, 100 superconducting magnet, 102 refrigerator, 105 cryostat, 106 heat shield, 107 opening, 110 superconducting coil body, 111 Lower support part, 113 cooling plate, 114 upper support part, 115 support member, 120 connection part, 131 second cooling head, 132 first cooling head, 133 main body part, 134 motor, 135 lid body, 136 cry

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Abstract

This superconducting wire material is provided with a first wire material having a first superconducting material layer, a second wire material having a second superconducting material layer, and a superconducting material joining layer. A portion of the first wire material and a portion of the second wire material are joined via the superconducting material joining layer such that the first superconducting material layer and the second superconducting material layer overlap. A plurality of particles and/or a plurality of voids, both of which functioning as a pinning center, are dispersed within the superconducting material joining layer.

Description

超電導線材、超電導コイル、超電導マグネットおよび超電導機器Superconducting wire, superconducting coil, superconducting magnet and superconducting equipment
　この発明は、超電導線材、超電導コイル、超電導マグネットおよび超電導機器に関する。本出願は、２０１７年５月１９日に出願した日本特許出願である特願２０１７－０９９６６８号に基づく優先権を主張する。当該日本特許出願に記載された全ての記載内容は、参照によって本明細書に援用される。 The present invention relates to a superconducting wire, a superconducting coil, a superconducting magnet, and a superconducting device. The present application claims priority based on Japanese Patent Application No. 2017-099668, which is a Japanese patent application filed on May 19, 2017. All the descriptions described in the Japanese patent application are incorporated herein by reference.
　国際公開第２０１６／１２９４６９号（特許文献１）は、第１の超電導材料層を含む第１の線材と、第２の超電導材料層を含む第２の線材と、第１の超電導材料層と第２の超電導材料層とを接合する超電導材料接合層とを備える超電導線材を開示している。 International Publication No. 2016/129469 (Patent Document 1) includes a first wire including a first superconducting material layer, a second wire including a second superconducting material layer, a first superconducting material layer, and a first superconducting material layer. A superconducting wire provided with a superconducting material joining layer that joins two superconducting material layers is disclosed.
国際公開第２０１６／１２９４６９号International Publication No. 2016/129469
　本発明の一態様に係る超電導線材は、第１の超電導材料層を有する第１の線材と、第２の超電導材料層を有する第２の線材と、超電導材料接合層とを備える。第１の線材の一部と第２の線材の一部とは、第１の超電導材料層と第２の超電導材料層とが重ね合わさるように、超電導材料接合層を介して接合される。超電導材料接合層中には、ピンニング中心として機能する複数の粒子および複数の空隙の少なくとも一方が分散されている。 The superconducting wire according to one embodiment of the present invention includes a first wire having a first superconducting material layer, a second wire having a second superconducting material layer, and a superconducting material bonding layer. Part of the first wire and part of the second wire are joined via the superconducting material joining layer so that the first superconducting material layer and the second superconducting material layer are overlapped. In the superconducting material bonding layer, at least one of a plurality of particles functioning as a pinning center and a plurality of voids is dispersed.
　本発明の一態様に係る超電導コイルは、本発明の一態様に係る超電導線材を備える。超電導線材は、超電導コイルの中心軸周りに巻き回されている。 The superconducting coil according to one aspect of the present invention includes the superconducting wire according to one aspect of the present invention. The superconducting wire is wound around the central axis of the superconducting coil.
　本発明の一態様に係る超電導マグネットは、本発明の一態様に係る超電導コイルと、超電導コイルを収容するクライオスタットと、超電導コイルを冷却する冷凍機とを備える。 A superconducting magnet according to an aspect of the present invention includes a superconducting coil according to an aspect of the present invention, a cryostat that houses the superconducting coil, and a refrigerator that cools the superconducting coil.
　本発明の一態様に係る超電導機器は、本発明の一態様に係る超電導マグネットを備える。 The superconducting device according to one aspect of the present invention includes the superconducting magnet according to one aspect of the present invention.
図１は、実施の形態１に従う超電導線材の概略断面図である。FIG. 1 is a schematic sectional view of a superconducting wire according to the first embodiment. 図２は、図１に示される領域ＩＩの概略部分拡大断面図である。FIG. 2 is a schematic partial enlarged cross-sectional view of region II shown in FIG. 図３は、図２に示される領域ＩＩＩの概略部分拡大断面図である。FIG. 3 is a schematic partial enlarged sectional view of region III shown in FIG. 図４は、超電導材料接合層の断面構造のＳＥＭ画像を示す図である。FIG. 4 is a diagram showing an SEM image of the cross-sectional structure of the superconducting material bonding layer. 図５は、実施の形態１に係る超電導線材の製造方法を示すフローチャートである。FIG. 5 is a flowchart showing a method of manufacturing a superconducting wire according to the first embodiment. 図６は、実施の形態２に従う超電導線材の概略断面図である。FIG. 6 is a schematic cross-sectional view of the superconducting wire according to the second embodiment. 図７は、図６に示される領域ＶＩＩの概略部分拡大断面図である。FIG. 7 is a schematic partial enlarged sectional view of region VII shown in FIG. 図８は、実施の形態３に従う超電導マグネットの概略断面図である。FIG. 8 is a schematic cross-sectional view of a superconducting magnet according to the third embodiment. 図９は、実施の形態４に従う超電導機器の概略断面図である。FIG. 9 is a schematic cross-sectional view of a superconducting device according to the fourth embodiment.
[本開示が解決しようとする課題]
　本発明の一態様の目的は、第１の線材の第１の超電導材料層と第２の線材の第２の超電導材料層とを接合する超電導材料接合層を備える超電導線材の磁場中における超電導特性を改善することである。本発明の一態様の目的は、このような超電導線材を含む超電導コイル、超電導マグネットおよび超電導機器を提供することである。
[本開示の効果]
　上記によれば、第１の線材の第１の超電導材料層と第２の線材の第２の超電導材料層とを接合する超電導材料接合層の磁場中における臨界電流密度を向上させることができる。上記によれば、超電導線材の磁場中における超電導特性を改善することができるため、該超電導線材を含む超電導コイル、超電導マグネットおよび超電導機器の各々において、強い磁場を発生し得る。 [Problems to be solved by this disclosure]
An object of one embodiment of the present invention is to provide superconducting characteristics in a magnetic field of a superconducting wire including a superconducting material joining layer that joins a first superconducting material layer of a first wire and a second superconducting material layer of a second wire. Is to improve. An object of one aspect of the present invention is to provide a superconducting coil, a superconducting magnet, and a superconducting device including such a superconducting wire.
[Effects of the present disclosure]
Based on the above, it is possible to improve the critical current density in the magnetic field of the superconducting material joining layer that joins the first superconducting material layer of the first wire and the second superconducting material layer of the second wire. According to the above, since the superconducting characteristics of the superconducting wire in the magnetic field can be improved, a strong magnetic field can be generated in each of the superconducting coil, superconducting magnet, and superconducting device including the superconducting wire.
　[本発明の実施形態の説明]
　最初に本発明の実施態様を列記して説明する。 [Description of Embodiment of the Present Invention]
First, embodiments of the present invention will be listed and described.
　（１）本発明の一態様に係る超電導線材１，１ｂ（図１および図６参照）は、第１の超電導材料層１３を有する第１の線材１０と、第２の超電導材料層２３を有する第２の線材２０と、超電導材料接合層４０，４２とを備える。第１の線材１０の一部１７と第２の線材２０の一部２７とは、第１の超電導材料層１３第２の超電導材料層２３とが重ね合わさるように、超電導材料接合層４０，４２を介して接合される。超電導材料接合層４０，４２中には、ピンニング中心として機能する複数の粒子４４および複数の空隙４６（図３参照）の少なくとも一方が分散されている。 (1) Superconducting wires 1 and 1b (see FIGS. 1 and 6) according to an aspect of the present invention have a first wire 10 having a first superconducting material layer 13 and a second superconducting material layer 23. A second wire 20 and superconducting material bonding layers 40 and 42 are provided. The superconducting material bonding layers 40 and 42 are formed so that the part 17 of the first wire 10 and the part 27 of the second wire 20 overlap the first superconducting material layer 13 and the second superconducting material layer 23. It is joined via. In the superconducting material bonding layers 40 and 42, at least one of a plurality of particles 44 functioning as a pinning center and a plurality of voids 46 (see FIG. 3) is dispersed.
　上記（１）に係る超電導線材１，１ｂでは、超電導材料接合層４０，４２中に分散されている粒子４４および空隙４６がピンニング中心として機能するため、超電導材料接合層４０，４２の磁場中における臨界電流密度Ｊｃを向上させることができる。これにより、超電導線材１，１ｂの磁場中における超電導特性を改善することができる。 In the superconducting wires 1 and 1b according to the above (1), the particles 44 and the voids 46 dispersed in the superconducting material bonding layers 40 and 42 function as pinning centers. Therefore, in the magnetic field of the superconducting material bonding layers 40 and 42 The critical current density Jc can be improved. Thereby, the superconducting characteristic in the magnetic field of the superconducting wire 1 and 1b can be improved.
　なお、本発明の実施態様には、第１の線材１０と第２の線材２０とが共通の線材である場合も含まれる。たとえば、第１の線材１０の一部１７が１本の線材の一方端部を構成し、第２の線材２０の一部２７が該１本の線材の他方端部を構成する場合がこれに該当する。本実施態様は、該１本の線材を巻き回して超電導コイルが形成される場面において適用され得る。 The embodiment of the present invention includes a case where the first wire 10 and the second wire 20 are a common wire. For example, this is the case when a part 17 of the first wire 10 constitutes one end of one wire, and a part 27 of the second wire 20 constitutes the other end of the one wire. Applicable. This embodiment can be applied in a situation where a superconducting coil is formed by winding the one wire.
　（２）上記（１）の超電導線材において、超電導材料接合層４０，４２の厚さ方向での断面における単位面積当たりの複数の粒子４４および複数の空隙４６の面積率は１％以上７０％以下である。 (2) In the superconducting wire of (1) above, the area ratio of the plurality of particles 44 and the plurality of voids 46 per unit area in the cross section in the thickness direction of the superconducting material bonding layers 40 and 42 is 1% or more and 70% or less. It is.
　このようにすると、超電導材料接合層４０，４２における超電導体の密度を低下させることなく、臨界電流密度Ｊｃの向上に適当な量のピンニング中心を超電導材料接合層４０，４２中に導入することができる。 In this way, an appropriate amount of pinning centers for improving the critical current density Jc can be introduced into the superconducting material bonding layers 40, 42 without reducing the density of the superconductor in the superconducting material bonding layers 40, 42. it can.
　なお、本明細書において、超電導材料接合層４０の単位断面積当たりの粒子４４および空隙４６の面積率とは、１０μｍ×超電導材料接合層の厚みの観察領域の面積に対する粒子４４および空隙４６の面積の割合をいう。粒子４４および空隙４６の面積とは、上記観察領域内に検出される全ての粒子４４および空隙４６の断面積の合計値をいう。 In this specification, the area ratio of the particles 44 and the voids 46 per unit cross-sectional area of the superconducting material bonding layer 40 is the area of the particles 44 and the voids 46 with respect to the area of the observation region of 10 μm × the thickness of the superconducting material bonding layer. The ratio of The area of the particle 44 and the void 46 refers to the total value of the cross-sectional areas of all the particles 44 and the void 46 detected in the observation region.
　（３）上記（１）または（２）に係る超電導線材において、複数の粒子４４および複数の空隙４６の各々の粒径は１０ｎｍ以上２０００ｎｍ以下である。 (3) In the superconducting wire according to (1) or (2) above, each of the plurality of particles 44 and the plurality of voids 46 has a particle size of 10 nm to 2000 nm.
　このようにすると、超電導材料接合層４０，４２内部において超電導体を途切れさせることなく、粒子４４および空隙４６の各々がピンニング中心としての機能を十分に発揮することができる。 In this way, each of the particles 44 and the voids 46 can sufficiently function as a pinning center without interrupting the superconductor in the superconducting material bonding layers 40 and 42.
　なお、本明細書において、粒子４４（または空隙４６）の粒径とは、ＳＥＭで得られた像（２次元平面投影像）から計測した粒子４４（または空隙４６）の長径をいう。 In this specification, the particle size of the particles 44 (or the voids 46) refers to the long diameter of the particles 44 (or the voids 46) measured from an image (two-dimensional planar projection image) obtained by SEM.
　（４）上記（１）から（３）に係る超電導線材において、超電導材料接合層４０，４２は、ＲＥ１Ｂａ２Ｃｕ３Ｏｙ（式中、ＲＥ：希土類元素、Ｂａ：バリウム、Ｃｕ：銅、Ｏ：酸素）で表されるＲＥ１２３系酸化物超電導体により構成されており、複数の粒子４４はＲＥ２Ｏ３を含む。 (4) In the superconducting wire according to the above (1) to (3), the superconducting material bonding layers 40 and 42 are formed of RE 1 Ba 2 Cu 3 O y (where RE: rare earth element, Ba: barium, Cu: copper). , O: oxygen), and the plurality of particles 44 include RE 2 O 3 .
　これによると、ＲＥ１２３系酸化物超電導体により構成された超電導材料接合層４０，４２において、結晶中から析出したＲＥ２Ｏ３（ＲＥ酸化物）がピンニング中心として機能し得る。ＲＥ２Ｏ３は超電導材料接合層４０，４２中に分散されているため、高いピン止めの機能を得ることができる。 According to this, RE 2 O 3 (RE oxide) precipitated from the crystal can function as a pinning center in the superconducting material bonding layers 40 and 42 formed of the RE123-based oxide superconductor. Since RE 2 O 3 is dispersed in the superconducting material bonding layers 40 and 42, a high pinning function can be obtained.
　（５）上記（１）から（４）に係る超電導線材において、超電導材料接合層は、ＲＥ１２３系酸化物超電導体により構成されており、複数の粒子４４はＣｕＯを含む。 (5) In the superconducting wires according to the above (1) to (4), the superconducting material bonding layer is composed of an RE123-based oxide superconductor, and the plurality of particles 44 include CuO.
　これによると、ＲＥ１２３系酸化物超電導体により構成された超電導材料接合層４０，４２において、結晶中から析出したＣｕＯ（酸化銅）がピンニング中心として機能し得る。ＣｕＯは超電導材料接合層４０，４２中に分散されているため、高いピン止めの機能を得ることができる。 According to this, CuO (copper oxide) precipitated from the crystal can function as a pinning center in the superconducting material bonding layers 40 and 42 formed of the RE123-based oxide superconductor. Since CuO is dispersed in the superconducting material bonding layers 40 and 42, a high pinning function can be obtained.
　（６）本発明の一態様に係る超電導コイル７０（図８参照）は、中心軸を有する超電導コイルであって、上記（１）から（５）に係る超電導線材１，１ｂを備える。上記（１）から（５）に係る超電導線材は、中心軸周りに巻き回されている。上記（６）に係る超電導コイル７０は、強い磁場を発生し得る。 (6) A superconducting coil 70 (see FIG. 8) according to an aspect of the present invention is a superconducting coil having a central axis, and includes the superconducting wires 1 and 1b according to the above (1) to (5). The superconducting wires according to the above (1) to (5) are wound around the central axis. The superconducting coil 70 according to the above (6) can generate a strong magnetic field.
　（７）本発明の一態様に係る超電導マグネット１００（図８参照）は、上記（６）に係る超電導コイル７０と、超電導コイル７０を収容するクライオスタット１０５と、超電導コイル７０を冷却する冷凍機１０２とを備える。上記（６）に係る超電導マグネット１００は、強い磁場を発生し得る。 (7) A superconducting magnet 100 (see FIG. 8) according to one aspect of the present invention includes a superconducting coil 70 according to (6) above, a cryostat 105 that houses the superconducting coil 70, and a refrigerator 102 that cools the superconducting coil 70. With. The superconducting magnet 100 according to the above (6) can generate a strong magnetic field.
　（８）本発明の一態様に係る超電導機器２００（図９参照）は、上記（７）に係る超電導マグネット１００を備える。上記（８）に係る超電導機器２００は、強い磁場を発生し得る。 (8) A superconducting device 200 (see FIG. 9) according to an aspect of the present invention includes the superconducting magnet 100 according to (7) above. The superconducting device 200 according to the above (8) can generate a strong magnetic field.
　[本発明の実施形態の詳細]
　以下、本発明の実施の形態について図面に基づいて説明する。なお、以下の図面において、同一または相当する部分には同一の参照符号を付し、その説明は繰り返さない。 [Details of the embodiment of the present invention]
Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following drawings, the same or corresponding parts are denoted by the same reference numerals, and the description thereof will not be repeated.
　［実施の形態１］
　（超電導線材）
　図１は、実施の形態１に係る超電導線材１の概略断面図である。図２は、図１に示される領域ＩＩの概略部分拡大断面図である。 [Embodiment 1]
(Superconducting wire)
FIG. 1 is a schematic cross-sectional view of superconducting wire 1 according to the first embodiment. FIG. 2 is a schematic partial enlarged cross-sectional view of region II shown in FIG.
　図１および図２に示されるように、本実施の形態に係る超電導線材１は、第１の線材１０と、第２の線材２０と、超電導材料接合層４０とを主に備える。 1 and 2, the superconducting wire 1 according to the present embodiment mainly includes a first wire 10, a second wire 20, and a superconducting material bonding layer 40.
　第１の線材１０は、第１の主面１３ｓを有する第１の超電導材料層１３を含む。特定的には、第１の線材１０は、第１の金属基板１１と、第１の金属基板１１上に設けられた第１の中間層１２と、第１の中間層１２上に設けられた第１の超電導材料層１３とを含んでもよい。 The first wire 10 includes a first superconducting material layer 13 having a first main surface 13s. Specifically, the first wire 10 is provided on the first metal substrate 11, the first intermediate layer 12 provided on the first metal substrate 11, and the first intermediate layer 12. The first superconducting material layer 13 may be included.
　第２の線材２０は、第２の主面２３ｓを有する第２の超電導材料層２３を含む。特定的には、第２の線材２０は、第２の金属基板２１と、第２の金属基板２１上に設けられた第２の中間層２２と、第２の中間層２２上に設けられた第２の超電導材料層２３とを含んでもよい。 The second wire 20 includes a second superconducting material layer 23 having a second main surface 23s. Specifically, the second wire 20 is provided on the second metal substrate 21, the second intermediate layer 22 provided on the second metal substrate 21, and the second intermediate layer 22. The second superconducting material layer 23 may be included.
　第１の金属基板１１および第２の金属基板２１の各々は、配向金属基板であってもよい。配向金属基板は、基板表面の面内の２軸方向に関して結晶方位が揃っている基板を意味する。配向金属基板は、たとえばＳＵＳまたはハステロイ（登録商標）のベース金属基板上にニッケル層および銅層などが配置されたクラッドタイプの金属基板であってもよい。 Each of the first metal substrate 11 and the second metal substrate 21 may be an oriented metal substrate. An oriented metal substrate means a substrate in which crystal orientations are aligned with respect to the biaxial direction in the plane of the substrate surface. The oriented metal substrate may be a clad type metal substrate in which, for example, a nickel layer and a copper layer are arranged on a SUS or Hastelloy (registered trademark) base metal substrate.
　第１の中間層１２は、第１の超電導材料層１３との反応性が極めて低く、第１の超電導材料層１３の超電導特性を低下させないような材料を用いることができる。第２の中間層２２は、第２の超電導材料層２３との反応性が極めて低く、第２の超電導材料層２３の超電導特性を低下させないような材料を用いることができる。第１の中間層１２および第２の中間層２２の各々は、たとえば、ＹＳＺ（イットリウム安定化ジルコニア）、ＣｅＯ２（酸化セリウム）、ＭｇＯ（酸化マグネシウム）、Ｙ２Ｏ３（酸化イットリウム）、Ａｌ２Ｏ３（酸化アルミニウム）、ＬａＭｎＯ３（酸化ランタンマンガン）およびＳｒＴｉＯ３（チタン酸ストロンチウム）の少なくとも１つから構成されてもよい。 The first intermediate layer 12 may be made of a material that has extremely low reactivity with the first superconducting material layer 13 and does not deteriorate the superconducting characteristics of the first superconducting material layer 13. The second intermediate layer 22 may be made of a material that has extremely low reactivity with the second superconducting material layer 23 and does not deteriorate the superconducting characteristics of the second superconducting material layer 23. Each of the first intermediate layer 12 and the second intermediate layer 22 includes, for example, YSZ (yttrium stabilized zirconia), CeO 2 (cerium oxide), MgO (magnesium oxide), Y 2 O 3 (yttrium oxide), Al It may be composed of at least one of 2 O 3 (aluminum oxide), LaMnO 3 (lanthanum manganese oxide), and SrTiO 3 (strontium titanate).
　第１の中間層１２および第２の中間層２２の各々は、複数の層により構成されていてもよい。第１の金属基板１１および第２の金属基板２１としてＳＵＳ基板またはハステロイ基板等、表面が配向結晶化されていない無配向基板が用いられる場合には、第１の中間層１２および第２の中間層２２は、たとえばＩＢＡＤ（Ion　Beam　Assisted　Deposition）法にて形成された結晶配向層であってもよい。第１の金属基板１１がその表面に結晶配向性を有するとき、第１の中間層１２は、第１の金属基板１１と第１の超電導材料層１３との結晶配向性の差を緩和してもよい。第２の金属基板２１がその表面に結晶配向性を有するとき、第２の中間層２２は、第２の金属基板２１と第２の超電導材料層２３との結晶配向性の差を緩和してもよい。 Each of the first intermediate layer 12 and the second intermediate layer 22 may be composed of a plurality of layers. When a non-oriented substrate whose surface is not oriented and crystallized, such as a SUS substrate or a Hastelloy substrate, is used as the first metal substrate 11 and the second metal substrate 21, the first intermediate layer 12 and the second intermediate substrate 12 The layer 22 may be a crystal orientation layer formed by, for example, an IBAD (Ion Beam Assisted Deposition) method. When the first metal substrate 11 has crystal orientation on its surface, the first intermediate layer 12 reduces the difference in crystal orientation between the first metal substrate 11 and the first superconducting material layer 13. Also good. When the second metal substrate 21 has crystal orientation on its surface, the second intermediate layer 22 reduces the difference in crystal orientation between the second metal substrate 21 and the second superconducting material layer 23. Also good.
　第１の超電導材料層１３は、第１の線材１０のうち、超電導電流が流れる部分である。第２の超電導材料層２３は、第２の線材２０のうち、超電導電流が流れる部分である。第１の超電導材料層１３および第２の超電導材料層２３は、特に限定されないが、酸化物超電導材料で構成されてもよい。特定的には、第１の超電導材料層１３は、ＲＥ１１Ｂａ２Ｃｕ３Ｏｙ１（６．０≦ｙ１≦８．０、ＲＥ１は希土類元素を表す）により構成されてもよい。第２の超電導材料層２３は、ＲＥ２１Ｂａ２Ｃｕ３Ｏｙ２（６．０≦ｙ２≦８．０、ＲＥ２は希土類元素を表す）により構成されてもよい。ＲＥ２は、ＲＥ１と同じであってもよいし、異なってもよい。さらに特定的には、ＲＥ１及びＲＥ２は、各々、イットリウム（Ｙ）、ガドリニウム（Ｇｄ）、サマリウム（Ｓｍ）またはホルミウム（Ｈｏ）であってもよい。さらに特定的には、ｙ１およびｙ２は、各々、６．８以上７．０以下であってもよい。 The first superconducting material layer 13 is a portion of the first wire 10 through which a superconducting current flows. The second superconducting material layer 23 is a portion of the second wire 20 through which a superconducting current flows. The first superconducting material layer 13 and the second superconducting material layer 23 are not particularly limited, but may be composed of an oxide superconducting material. Specifically, the first superconducting material layer 13 may be made of RE1 1 Ba 2 Cu 3 O y1 (6.0 ≦ y1 ≦ 8.0, where RE1 represents a rare earth element). The second superconducting material layer 23 may be composed of RE2 1 Ba 2 Cu 3 O y2 (6.0 ≦ y2 ≦ 8.0, where RE2 represents a rare earth element). RE2 may be the same as or different from RE1. More specifically, RE1 and RE2 may each be yttrium (Y), gadolinium (Gd), samarium (Sm), or holmium (Ho). More specifically, y1 and y2 may be 6.8 or more and 7.0 or less, respectively.
　第１の超電導材料接合層４０は、第１の超電導材料層１３の第１の主面１３ｓの第１の部分１７と第２の超電導材料層２３の第２の主面２３ｓの第２の部分２７とを接合する。第１の超電導材料接合層４０は、特に限定されないが、酸化物超電導材料で構成されてもよい。特定的には、第１の超電導材料接合層４０は、ＲＥ３１Ｂａ２Ｃｕ３Ｏｙ３（６．０≦ｙ３≦８．０、ＲＥ３は希土類元素を表す）により構成されてもよい。ＲＥ３は、ＲＥ１と同じであってもよいし、異なってもよい。ＲＥ３は、ＲＥ２と同じであってもよいし、異なってもよい。さらに特定的には、ＲＥ３は、イットリウム（Ｙ）、ガドリニウム（Ｇｄ）、ジスプロシウム（Ｄｙ）、ユウロピウム（Ｅｕ）、ランタン（Ｌａ）、ネオジム（Ｎｄ）、エルビウム（Ｅｒ）、ツリウム（Ｔｍ）、イッテルビウム（Ｙｂ）、ルテチウム（Ｌｕ）、サマリウム（Ｓｍ）またはホルミウム（Ｈｏ）であってもよい。さらに特定的には、ｙ３は、６．８以上７．０以下であってもよい。 The first superconducting material bonding layer 40 includes a first portion 17 of the first main surface 13 s of the first superconducting material layer 13 and a second portion of the second main surface 23 s of the second superconducting material layer 23. 27 is joined. The first superconducting material bonding layer 40 is not particularly limited, but may be composed of an oxide superconducting material. Specifically, the first superconducting material bonding layer 40 may be made of RE3 1 Ba 2 Cu 3 O y3 (6.0 ≦ y3 ≦ 8.0, where RE3 represents a rare earth element). RE3 may be the same as or different from RE1. RE3 may be the same as or different from RE2. More specifically, RE3 is yttrium (Y), gadolinium (Gd), dysprosium (Dy), europium (Eu), lanthanum (La), neodymium (Nd), erbium (Er), thulium (Tm), ytterbium. (Yb), lutetium (Lu), samarium (Sm) or holmium (Ho) may be used. More specifically, y3 may be 6.8 or more and 7.0 or less.
　図３は、図２に示される領域ＩＩＩの概略部分拡大断面図である。
　図３に示されるように、超電導材料接合層４０中には、複数の粒子４４および複数の空隙４６が分散している。複数の粒子４４は、ＲＥ３２Ｏ３およびＣｕＯの少なくとも１つを含んでいる。 FIG. 3 is a schematic partial enlarged sectional view of region III shown in FIG.
As shown in FIG. 3, a plurality of particles 44 and a plurality of voids 46 are dispersed in the superconducting material bonding layer 40. The plurality of particles 44 include at least one of RE3 2 O 3 and CuO.
　粒子４４および空隙４６の各々は、超電導材料接合層４０中において、磁束ピン止め点（以下、「ピンニング中心」という）として機能し得る。ピンニング中心は、磁場下において超電導材料接合層４０の内部に侵入した磁束線を捕捉して固定（ピン止め）することにより、磁束線の運動を妨げる働きをする。超電導材料接合層４０にピンニング中心を導入することにより、超電導材料接合層４０の磁場中における臨界電流密度Ｊｃを向上させることができる。この結果、超電導線材１の磁場中における超電導特性を改善することができる。 Each of the particles 44 and the voids 46 can function as a magnetic flux pinning point (hereinafter referred to as “pinning center”) in the superconducting material bonding layer 40. The pinning center functions to prevent the movement of the magnetic flux lines by capturing and fixing (pinning) the magnetic flux lines that have entered the superconducting material bonding layer 40 under a magnetic field. By introducing a pinning center into the superconducting material bonding layer 40, the critical current density Jc in the magnetic field of the superconducting material bonding layer 40 can be improved. As a result, the superconducting characteristic in the magnetic field of the superconducting wire 1 can be improved.
　なお、常電導粒子および空隙結晶粒界面はピンニング中心として機能するため、超電導材料接合層４０中に粒子４４および空隙４６の少なくとも一方が分散されていれば、磁場中における臨界電流密度Ｊｃを向上させることが可能となる。 The interface between the normal conducting particles and the void crystal grains functions as a pinning center. Therefore, if at least one of the particles 44 and the voids 46 is dispersed in the superconducting material bonding layer 40, the critical current density Jc in the magnetic field is improved. It becomes possible.
　図４に、超電導材料接合層４０の断面構造を、走査型電子顕微鏡（ＳＥＭ：Scanning　Electron　Microscope）によって観察した結果を示す。図４は、ＲＥ１、ＲＥ２およびＲＥ３がともにＧｄである超電導線材１における、図３に示される領域ＩＩＩの断面ＳＥＭ像である。 FIG. 4 shows the result of observing the cross-sectional structure of the superconducting material bonding layer 40 with a scanning electron microscope (SEM). FIG. 4 is a cross-sectional SEM image of region III shown in FIG. 3 in superconducting wire 1 in which RE1, RE2, and RE3 are all Gd.
　図４に示されるように、超電導材料接合層４０中にＧｄ２Ｏ３の粒子が形成されている。Ｇｄ２Ｏ３の粒子はピンニング中心として機能し得る。 As shown in FIG. 4, Gd 2 O 3 particles are formed in the superconducting material bonding layer 40. The particles of Gd 2 O 3 can function as pinning centers.
　本実施の形態に係る超電導線材１において、超電導材料接合層４０中に含まれる粒子４４および空隙４６の各々の粒径は１０ｎｍ以上１０００ｎｍ以下であることが好ましい。粒子４４および空隙４６のサイズが小さすぎると、粒子４４および空隙４６の表面積が小さくなるため、ピンニング中心としての機能を十分に発揮させることができない。一方、粒子４４および空隙４６のサイズが大きすぎると、超電導材料接合層４０中の酸化物超電導体が粒子４４および空隙４６によって断絶されることとなり、超電導線材１の超電導特性を低下させる虞がある。なお、本明細書において、粒子（または空隙）の粒径とは、ＳＥＭで得られた像（２次元平面投影像）から計測した粒子（または空隙）の長径をいう。 In the superconducting wire 1 according to the present embodiment, the particle size of each of the particles 44 and the voids 46 included in the superconducting material bonding layer 40 is preferably 10 nm or more and 1000 nm or less. If the size of the particles 44 and the voids 46 is too small, the surface area of the particles 44 and the voids 46 becomes small, so that the function as the pinning center cannot be sufficiently exhibited. On the other hand, if the size of the particles 44 and the voids 46 is too large, the oxide superconductor in the superconducting material bonding layer 40 is disconnected by the particles 44 and the voids 46, and the superconducting characteristics of the superconducting wire 1 may be degraded. . In this specification, the particle size of particles (or voids) refers to the long diameter of particles (or voids) measured from an image (two-dimensional planar projection image) obtained by SEM.
　また、本実施の形態に係る超電導線材１において、超電導材料接合層４０の単位断面積当たりの粒子４４および空隙４６の面積率は２％以上７０％以下であることが好ましい。粒子４４および空隙４６の面積率が低すぎると、十分な量のピンニング中心を得ることができない。一方で、粒子４４および空隙４６の面積率が高すぎると、超電導材料接合層４０を構成する酸化物超電導体の密度が低くなり、臨界電流Ｉｃなどの超電導特性を低下させる虞がある。 In the superconducting wire 1 according to the present embodiment, the area ratio of the particles 44 and the voids 46 per unit cross-sectional area of the superconducting material bonding layer 40 is preferably 2% or more and 70% or less. If the area ratio of the particles 44 and the voids 46 is too low, a sufficient amount of pinning centers cannot be obtained. On the other hand, if the area ratio of the particles 44 and the voids 46 is too high, the density of the oxide superconductor constituting the superconducting material bonding layer 40 is lowered, and there is a possibility that the superconducting characteristics such as the critical current Ic are deteriorated.
　なお、本明細書において、超電導材料接合層４０の単位断面積当たりの粒子４４および空隙４６の面積率とは、１０μｍ×超電導材料接合層４０厚みの観察領域の面積に対する粒子４４および空隙４６の面積の割合をいう。粒子４４および空隙４６の面積とは、上記観察領域内に検出される全ての粒子４４および空隙４６の断面積の合計値をいう。 In the present specification, the area ratio of the particles 44 and the voids 46 per unit cross-sectional area of the superconducting material bonding layer 40 is the area of the particles 44 and the voids 46 with respect to the area of the observation region of 10 μm × superconducting material bonding layer 40 thickness. The ratio of The area of the particle 44 and the void 46 refers to the total value of the cross-sectional areas of all the particles 44 and the void 46 detected in the observation region.
　（超電導線材の製造方法）
　次に、図５を参照して、本実施の形態に係る超電導線材１の製造方法について説明する。本実施の形態に係る超電導線材１の製造方法は、第１の超電導材料層１３および第２の超電導材料層２３の少なくとも一方に、第１の超電導材料接合層４０の材料により構成される微結晶を生成させる微結晶生成工程（Ｓ１０）を有している。 (Manufacturing method of superconducting wire)
Next, with reference to FIG. 5, the manufacturing method of the superconducting wire 1 which concerns on this Embodiment is demonstrated. In the method of manufacturing superconducting wire 1 according to the present embodiment, at least one of first superconducting material layer 13 and second superconducting material layer 23 is a microcrystal composed of the material of first superconducting material bonding layer 40. A microcrystal generation step (S10) for generating.
　本実施の形態では、熱塗布分解（ＭＯＤ：Metal　Organic　Decomposition）法を例に挙げて説明する。図５に示すように、本実施の形態に係る超電導線材１の製造方法は、微結晶生成工程（Ｓ１０）、貼り合わせ工程（Ｓ２０）および加熱加圧工程（Ｓ３０）を含む。 In the present embodiment, a thermal coating decomposition (MOD: Metal Organic Decomposition) method will be described as an example. As shown in FIG. 5, the method of manufacturing superconducting wire 1 according to the present embodiment includes a microcrystal generation step (S10), a bonding step (S20), and a heating and pressing step (S30).
　微結晶生成工程（Ｓ１０）は、塗膜形成工程（Ｓ１１）、仮燃成工程（Ｓ１２）および仮焼成膜分解工程（Ｓ１３）を含む。仮焼成膜分解工程（Ｓ１２）を行なった後に、貼り合わせ工程（Ｓ２０）を行なう。そして、加熱加圧工程（Ｓ３０）としての本燃焼処理工程を経て、図２に示した酸化物超電導体を含む超電導材料接合層４０を形成することにより、超電導材料接合層４０を介して第１の超電導材料層１３および第２の超電導材料層２３を接合して長尺化された超電導線材１を製造する。以下、それぞれの工程を順に説明する。 The microcrystal production step (S10) includes a coating film formation step (S11), a temporary combustion formation step (S12), and a temporary fired film decomposition step (S13). After performing the temporary fired film decomposition step (S12), the bonding step (S20) is performed. Then, through the main combustion treatment step as the heating and pressurizing step (S30), the superconducting material bonding layer 40 including the oxide superconductor shown in FIG. The superconducting wire 1 is manufactured by joining the superconducting material layer 13 and the second superconducting material layer 23 together. Hereinafter, each process is demonstrated in order.
　（１）微結晶生成工程
　微結晶生成工程（Ｓ１０）においては、以下に示すように、塗膜形成工程（Ｓ１１）、仮燃成工程（Ｓ１２）、仮焼成膜熱分解工程（Ｓ１３）を経て微結晶を生成させる。 (1) Microcrystal production process In the microcrystal production process (S10), as shown below, it passes through a coating-film formation process (S11), a temporary combustion formation process (S12), and a temporary baking film | membrane thermal decomposition process (S13). Microcrystals are formed.
　（ａ）塗膜形成工程
　塗膜形成工程（Ｓ１１）では、第１の超電導材料層１３の第１の部分１７および第２の超電導材料層２３の第２の部分２７の少なくとも一方の上に、第１の超電導材料接合層４０を構成する金属の有機化合物を含む溶液を塗布した後、乾燥させて塗膜を形成する。 (A) Coating film forming step In the coating film forming step (S11), on at least one of the first portion 17 of the first superconducting material layer 13 and the second portion 27 of the second superconducting material layer 23, A solution containing a metal organic compound constituting the first superconducting material bonding layer 40 is applied and then dried to form a coating film.
　このような溶液として、具体的には、ＭＯＤ法における原料溶液、すなわち、第１の超電導材料接合層４０の材料であるＲＥ３１Ｂａ２Ｃｕ３Ｏｙを構成する元素の有機化合物（たとえば、有機金属化合物または有機金属錯体）を有機溶媒に溶解した溶液が用いられる。有機化合物は、フッ素を含まない有機化合物であってもよい。 As such a solution, specifically, a raw material solution in the MOD method, that is, an organic compound of an element constituting RE3 1 Ba 2 Cu 3 O y which is a material of the first superconducting material bonding layer 40 (for example, organic A solution in which a metal compound or an organometallic complex) is dissolved in an organic solvent is used. The organic compound may be an organic compound not containing fluorine.
　具体的な塗布方法としては、たとえば、ダイコート方法またはインクジェット方法などを挙げることができるが、それ以外の塗布方法を採用してもよい。また、塗布に際しては、第１の部分１７および第２の部分２７の少なくとも一方の全面に塗布するが、塗膜の厚みは適宜設定する。 Specific examples of the coating method include a die coating method and an inkjet method, but other coating methods may be employed. In addition, the coating is applied to the entire surface of at least one of the first portion 17 and the second portion 27, and the thickness of the coating film is appropriately set.
　本実施の形態では、原料溶液を、ＲＥ３、Ｂａ、Ｃｕの各有機金属化合物を、ＲＥ３、Ｂａ、Ｃｕの組成比（ＲＥ３：Ｂａ：Ｃｕ）がａ：２：ｂとなるように調製して溶媒に溶解することによって作製する。なお、本明細書において、組成比（ＲＥ３：Ｂａ：Ｃｕ）とは、ＲＥ３、Ｂａ、Ｃｕの原子濃度比（モル比）をいう。ＭＯＤ法では、原料溶液の組成比を調製することによって、形成される超電導材料接合層４０の組成比を制御することができる。 In the present embodiment, the raw material solution is prepared with each of the RE3, Ba, and Cu organometallic compounds so that the composition ratio of RE3, Ba, and Cu (RE3: Ba: Cu) is a: 2: b. It is prepared by dissolving in a solvent. In the present specification, the composition ratio (RE3: Ba: Cu) refers to an atomic concentration ratio (molar ratio) of RE3, Ba, and Cu. In the MOD method, the composition ratio of the superconducting material bonding layer 40 to be formed can be controlled by adjusting the composition ratio of the raw material solution.
　上記組成比（ａ：２：ｂ）において、超電導材料接合層４０にピンニング中心を効率的に導入するためには、ａは１≦ａ≦１．５を満たす範囲内で選択することが好ましく、１．１≦ａ≦１．３の範囲内で選択することがより好ましい。また上記組成比において、ｂは、３≦ｂ≦３．５を満たす範囲内で選択することが好ましく、３．１≦ｂ≦３．４を満たす範囲内で選択することがより好ましい。なお、本実施の形態では、原料溶液のＲＥ３３＋、Ｂａ２＋、Ｃｕ２＋を合わせた総カチオン濃度は１ｍｏｌ／Ｌとする。 In the composition ratio (a: 2: b), in order to efficiently introduce the pinning center into the superconducting material bonding layer 40, a is preferably selected within a range satisfying 1 ≦ a ≦ 1.5, It is more preferable to select within the range of 1.1 ≦ a ≦ 1.3. In the composition ratio, b is preferably selected within a range satisfying 3 ≦ b ≦ 3.5, and more preferably selected within a range satisfying 3.1 ≦ b ≦ 3.4. In the present embodiment, the total cation concentration of RE3 3+ , Ba 2+ and Cu 2+ in the raw material solution is 1 mol / L.
　一般的なＲＥ１２３系酸化物超電導体では、組成比（ＲＥ：Ｂａ：Ｃｕ）は１：２：３である。本実施の形態では、この一般的なＲＥ１２３系酸化物超電導体に比べて、ＲＥ原子濃度およびＣｕ原子濃度の少なくとも一方を高くする。このようにすると、超電導材料接合層４０中にＲＥ３２Ｏ３およびＣｕＯなどの酸化物粒子を多く析出させることができる。図３に示したように、ＲＥ３２Ｏ３およびＣｕＯは、超電導材料接合層４０中に分散された複数の粒子４４を構成し、ピン止めの機能を有している。すなわち、ＲＥ原子濃度およびＣｕ原子濃度の少なくとも一方を高くすることで、超電導材料接合層４０中にピンニング中心を効率良く導入することができる。 In a general RE123-based oxide superconductor, the composition ratio (RE: Ba: Cu) is 1: 2: 3. In this embodiment, at least one of the RE atom concentration and the Cu atom concentration is made higher than that of this general RE123-based oxide superconductor. In this way, a large amount of oxide particles such as RE3 2 O 3 and CuO can be precipitated in the superconducting material bonding layer 40. As shown in FIG. 3, RE3 2 O 3 and CuO constitute a plurality of particles 44 dispersed in the superconducting material bonding layer 40 and have a pinning function. That is, by increasing at least one of the RE atom concentration and the Cu atom concentration, the pinning center can be efficiently introduced into the superconducting material bonding layer 40.
　ただし、超電導材料接合層４０中に形成される酸化物粒子が多くなりすぎると、超電導材料接合層４０におけるＲＥ１２３系酸化物超電導体の密度が減少するため、却って超電導特性が低下する可能性がある。上述した範囲内でＲＥ濃度およびＣｕ濃度を選択することで、超電導特性を低下させることなく、超電導材料接合層４０中に適当にピンニング中心を分散させることができる。 However, if too many oxide particles are formed in the superconducting material bonding layer 40, the density of the RE123-based oxide superconductor in the superconducting material bonding layer 40 decreases, so that there is a possibility that the superconducting characteristics may deteriorate instead. . By selecting the RE concentration and the Cu concentration within the above-mentioned ranges, the pinning centers can be appropriately dispersed in the superconducting material bonding layer 40 without deteriorating the superconducting characteristics.
　（ｂ）仮燃成工程
　仮燃成工程（Ｓ１２）では、乾燥した塗膜を熱処理することにより熱分解して、第１の超電導材料接合層４０を構成する元素の有機化合物を含む膜を仮焼成する。 (B) Temporary Combustion Step In the temporary combustion formation step (S12), the dried coating film is thermally decomposed by heat treatment, and a film containing an organic compound of an element constituting the first superconducting material bonding layer 40 is temporarily added. Bake.
　具体的には、乾燥した塗膜に対して、第１の温度で加熱処理する。第１の温度は、有機金属化合物の分解温度以上、かつ、第１の超電導材料接合層４０を構成する酸化物超電導体が生成される温度未満である。これにより、塗膜の有機金属化合物が熱分解して、酸化物超電導体の前駆体となる（以下、この前駆体を含む膜を「仮焼膜」という）。酸化物超電導体の前駆体は、たとえば、Ｂａの炭素化合物であるＢａＣＯ３、希土類元素酸化物であるＲＥ３２Ｏ３、ＣｕＯを含む。仮燃成工程は、たとえば、約５００℃の温度（第１の温度）で、かつ、２０％以上の酸素濃度の雰囲気下で行なわれてもよい。 Specifically, the dried coating film is heat-treated at the first temperature. The first temperature is equal to or higher than the decomposition temperature of the organometallic compound and lower than the temperature at which the oxide superconductor constituting the first superconducting material bonding layer 40 is generated. Thereby, the organometallic compound of the coating film is thermally decomposed to become a precursor of the oxide superconductor (hereinafter, a film containing this precursor is referred to as “calcined film”). The precursor of the oxide superconductor includes, for example, BaCO 3 which is a carbon compound of Ba, RE3 2 O 3 which is a rare earth element oxide, and CuO. The pre-combustion process may be performed, for example, in an atmosphere having a temperature of about 500 ° C. (first temperature) and an oxygen concentration of 20% or more.
　（ｃ）仮燃成膜熱分解工程
　仮焼膜熱分解工程（Ｓ１３）では、第１の温度よりも高い第２の温度で仮焼膜を加熱して、仮焼膜に含まれる炭素化合物を熱分解させる。第２の温度は、たとえば、６５０℃以上８００℃以下であってもよい。仮焼膜に含まれる炭素化合物が熱分解されて、第１の超電導材料接合層４０を構成する酸化物超電導体が得られる。仮焼膜熱分解工程（Ｓ１３）は、第１の酸素濃度の雰囲気下で行なわれる。第１の酸素濃度は、１％以上１００％以下（酸素分圧１ａｔｍ）である。そのため、微結晶が成長して微結晶の平均粒径が３００ｎｍより大きくなることが抑制される。こうして、第１の超電導材料層１３の第１の部分１７および第２の超電導材料層２３の第２の部分２７の少なくとも一方の上に、第１の超電導材料接合層４０を構成する酸化物超電導体の微結晶が形成される。 (C) Calcined film formation pyrolysis step In the calcined film pyrolysis step (S13), the calcined film is heated at a second temperature higher than the first temperature, and the carbon compound contained in the calcined film is changed. Thermally decompose. 650 degreeC or more and 800 degrees C or less may be sufficient as 2nd temperature, for example. The carbon compound contained in the calcined film is thermally decomposed to obtain an oxide superconductor constituting the first superconducting material bonding layer 40. The calcined film pyrolysis step (S13) is performed in an atmosphere having a first oxygen concentration. The first oxygen concentration is 1% to 100% (oxygen partial pressure 1 atm). Therefore, it is suppressed that the microcrystal grows and the average grain size of the microcrystal becomes larger than 300 nm. In this way, the oxide superconductivity constituting the first superconducting material bonding layer 40 on at least one of the first portion 17 of the first superconducting material layer 13 and the second portion 27 of the second superconducting material layer 23. Microcrystals of the body are formed.
　（２）貼り合わせ工程（Ｓ２０）
　貼り合わせ工程（Ｓ２０）では、微結晶を介して、第１の線材１０の一部と第２の線材２０の一部とを重ね合わせる。第１の線材１０の一部は第１の線材１０の第１の部分１７であってもよく、第２の線材２０の一部は第２の線材２０の第２の部分２７であってもよい。 (2) Bonding step (S20)
In the bonding step (S20), a part of the first wire rod 10 and a part of the second wire rod 20 are overlapped via the microcrystal. A part of the first wire 10 may be the first part 17 of the first wire 10, and a part of the second wire 20 may be the second part 27 of the second wire 20. Good.
　（３）加熱加圧工程
　加熱加圧工程（Ｓ３０）では、第１の線材１０および第２の線材２０に圧力を加えながら熱を加える。具体的には、押圧治具を用いて、１ＭＰａ以上の圧力で第１の線材１０および第２の線材２０に圧力を加えて、第１の線材１０と第２の線材２０とを互いに押し付ける。この状態で、第１の線材１０、第２の線材２０および微結晶を、第３の温度で、かつ、第２の酸素濃度の雰囲気下で加熱する。第３の温度は第２の温度以上であり、かつ、第１の超電導材料接合層４０を構成する酸化物超電導体が生成される温度以上である。第２の酸素濃度は、第１の酸素濃度よりも低い。第２の酸素濃度は、たとえば、１００ｐｐｍであってもよい。 (3) Heating and pressing step In the heating and pressing step (S30), heat is applied while applying pressure to the first wire 10 and the second wire 20. Specifically, the first wire 10 and the second wire 20 are pressed against each other by applying pressure to the first wire 10 and the second wire 20 at a pressure of 1 MPa or more using a pressing jig. In this state, the first wire 10, the second wire 20, and the microcrystal are heated at a third temperature and in an atmosphere having a second oxygen concentration. The third temperature is equal to or higher than the second temperature and equal to or higher than the temperature at which the oxide superconductor constituting the first superconductive material bonding layer 40 is generated. The second oxygen concentration is lower than the first oxygen concentration. The second oxygen concentration may be 100 ppm, for example.
　加熱加圧工程（Ｓ３０）では、仮焼成膜熱分解工程（Ｓ２０）において生成された微結晶が成長して、大きな粒径を有する結晶により構成される第１の超電導材料接合層４０が生成される。塗膜形成工程（Ｓ１１）において塗膜が形成されていた第１の超電導材料層１３および第２の超電導材料層２３の少なくとも一方の結晶方位に沿って微結晶が成長して、第１の超電導材料接合層４０になる。こうして、第１の超電導材料接合層４０を介して、第１の線材１０の第１の超電導材料層１３と第２の線材２０の第２の超電導材料層２３とは互いに接合される。 In the heating and pressurizing step (S30), the microcrystals generated in the pre-baked film pyrolysis step (S20) grow to generate the first superconducting material bonding layer 40 composed of crystals having a large particle size. The A microcrystal grows along the crystal orientation of at least one of the first superconducting material layer 13 and the second superconducting material layer 23 on which the coating film has been formed in the coating film forming step (S11). The material bonding layer 40 is obtained. Thus, the first superconducting material layer 13 of the first wire 10 and the second superconducting material layer 23 of the second wire 20 are joined to each other via the first superconducting material joining layer 40.
　加熱加圧工程（Ｓ３０）によって、第１の超電導材料接合層４０中には空隙４６（図３参照）が分散して形成され得る。上述したように、空隙４６がピンニング中心として機能するためには、空隙４６の粒径は１０ｎｍ以上１０００ｎｍ以下であることが好ましい。空隙４６の粒径は、仮焼成膜熱分解工程（Ｓ１３）で形成される微結晶の粒径を調製すること、および／または、加熱加圧工程（Ｓ３０）における第３の温度および第２の酸素濃度などの条件を調製することで、制御することができる。 By the heating and pressurizing step (S30), the voids 46 (see FIG. 3) can be dispersed and formed in the first superconducting material bonding layer 40. As described above, in order for the void 46 to function as a pinning center, the particle size of the void 46 is preferably 10 nm or more and 1000 nm or less. As for the particle size of the void 46, the particle size of the microcrystal formed in the pre-baked film pyrolysis step (S13) and / or the third temperature and the second temperature in the heating and pressurizing step (S30) are prepared. It can be controlled by adjusting conditions such as oxygen concentration.
　具体的には、仮焼成膜熱分解工程（Ｓ１３）において、１００ｎｍ以上３００ｎｍ以下の粒径の微結晶を含むことが好ましい。これには、第２の温度を６５０℃以上８００℃以下にすればよい。また、第１の酸素濃度を５０％以上１００％以下にすればよい。また、加熱加圧工程（Ｓ３０）において、第３の温度を６５０℃以上８００℃以下にすればよい。また、第２の酸素濃度を５０ｐｐｍ以上０．０１％以下にすればよい。 Specifically, it is preferable that the pre-fired film pyrolysis step (S13) includes fine crystals having a particle size of 100 nm or more and 300 nm or less. For this purpose, the second temperature may be 650 ° C. or higher and 800 ° C. or lower. Further, the first oxygen concentration may be 50% or more and 100% or less. Moreover, what is necessary is just to make 3rd temperature into 650 degreeC or more and 800 degrees C or less in a heating-pressing process (S30). The second oxygen concentration may be 50 ppm or more and 0.01% or less.
　本実施の形態に係る超電導線材１の製造方法は、酸素アニール工程（Ｓ４０）をさらに備えてもよい。酸素アニール工程（Ｓ４０）は、第４の温度で、かつ、第３の酸素濃度の雰囲気下で行なわれる。第４の温度は、第３の温度以下である。第４の温度は、２００℃以上５００℃以下であってもよい。第３の酸素濃度は、第２の酸素濃度よりも高い。第３の酸素濃度は、たとえば、１００％（酸素分圧１ａｔｍ）であってもよい。酸素アニール工程（Ｓ５０）において、第１の超電導材料層１３、第１の超電導材料接合層４０および第２の超電導材料層２３に、酸素が十分に供給され得る。以上の工程によって、本実施の形態に係る超電導線材１は製造され得る。 The method for manufacturing the superconducting wire 1 according to the present embodiment may further include an oxygen annealing step (S40). The oxygen annealing step (S40) is performed at a fourth temperature and in an atmosphere having a third oxygen concentration. The fourth temperature is equal to or lower than the third temperature. The fourth temperature may be 200 ° C. or higher and 500 ° C. or lower. The third oxygen concentration is higher than the second oxygen concentration. The third oxygen concentration may be, for example, 100% (oxygen partial pressure 1 atm). In the oxygen annealing step (S50), oxygen can be sufficiently supplied to the first superconducting material layer 13, the first superconducting material bonding layer 40, and the second superconducting material layer. Superconducting wire 1 according to the present embodiment can be manufactured through the above steps.
　以下、本実施の形態に係る超電導線材１の効果について説明する。
　本実施の形態に係る超電導線材１において、第１の線材１０の第１の超電導材料層１３と、第２の線材２０の第２の超電導材料層２３とを接合する第１の超電導材料接合層４０中に、複数の粒子４４および複数の空隙４６の少なくとも一方が分散されている（図３参照）。これによると、複数の粒子４４および複数の空隙４６の少なくとも一方は、超電導材料接合層４０内でピンニング中心として機能するため、磁場中における臨界電流密度Ｊｃを向上させることができる。この結果、超電導線材１の磁場中における超電導特性を改善することができる。 Hereinafter, the effect of the superconducting wire 1 according to the present embodiment will be described.
In the superconducting wire 1 according to the present embodiment, a first superconducting material bonding layer that joins the first superconducting material layer 13 of the first wire 10 and the second superconducting material layer 23 of the second wire 20. At least one of the plurality of particles 44 and the plurality of voids 46 is dispersed in 40 (see FIG. 3). According to this, since at least one of the plurality of particles 44 and the plurality of voids 46 functions as a pinning center in the superconducting material bonding layer 40, the critical current density Jc in the magnetic field can be improved. As a result, the superconducting characteristic in the magnetic field of the superconducting wire 1 can be improved.
　［実施の形態２］
　図２、図６および図７を参照して、実施の形態２に従う超電導線材１ｂについて説明する。図６は、実施の形態２に従う超電導線材１の概略断面図である。図７は、図６に示される領域ＶＩＩの概略部分拡大断面図である。 [Embodiment 2]
A superconducting wire 1b according to the second embodiment will be described with reference to FIG. 2, FIG. 6, and FIG. FIG. 6 is a schematic cross-sectional view of superconducting wire 1 according to the second embodiment. FIG. 7 is a schematic partial enlarged sectional view of region VII shown in FIG.
　本実施の形態に係る超電導線材１ｂは、実施の形態１に従う超電導線材１と同様の構成を備え、かつ、同様の効果を奏するが、以下の点で主に異なる。 The superconducting wire 1b according to the present embodiment has the same configuration as the superconducting wire 1 according to the first embodiment and has the same effect, but is mainly different in the following points.
　本実施の形態に係る超電導線材１ｂは、第３の線材３０と、第２の超電導材料接合層４２とをさらに備える。 The superconducting wire 1b according to the present embodiment further includes a third wire 30 and a second superconducting material bonding layer 42.
　第３の線材３０は、第３の主面３３ｓを有する第３の超電導材料層３３を含む。特定的には、第３の線材３０は、第３の金属基板３１と、第３の金属基板３１上に設けられた第３の中間層３２と、第３の中間層３２上に設けられた第３の超電導材料層３３とを含んでもよい。第３の線材３０は、第１の線材１０と同様に構成されてもよい。 The third wire 30 includes a third superconducting material layer 33 having a third main surface 33s. Specifically, the third wire 30 is provided on the third metal substrate 31, the third intermediate layer 32 provided on the third metal substrate 31, and the third intermediate layer 32. The third superconducting material layer 33 may be included. The third wire 30 may be configured in the same manner as the first wire 10.
　第３の金属基板３１は、配向金属基板であってもよい。配向金属基板は、金属基板の表面において、結晶方位が揃っている金属基板を意味する。配向金属基板は、例えば、ＳＵＳまたはハステロイ（登録商標）のベース金属基板上にニッケル層および銅層などが配置されたクラッドタイプの金属基板であってもよい。 The third metal substrate 31 may be an oriented metal substrate. An oriented metal substrate means a metal substrate having a uniform crystal orientation on the surface of the metal substrate. The oriented metal substrate may be, for example, a clad type metal substrate in which a nickel layer, a copper layer, and the like are arranged on a SUS or Hastelloy (registered trademark) base metal substrate.
　第３の中間層３２は、第３の超電導材料層３３との反応性が極めて低く、第３の超電導材料層３３の超電導特性を低下させないような材料を用いることができる。第３の中間層３２は、例えば、ＹＳＺ、ＣｅＯ２、ＭｇＯ、Ｙ２Ｏ３、Ａｌ２Ｏ３、ＬａＭｎＯ３、Ｇｄ２Ｚｒ２Ｏ７およびＳｒＴｉＯ３の少なくとも一つから構成されてもよい。 The third intermediate layer 32 may be made of a material that has extremely low reactivity with the third superconducting material layer 33 and does not deteriorate the superconducting characteristics of the third superconducting material layer 33. The third intermediate layer 32 may be composed of, for example, at least one of YSZ, CeO 2 , MgO, Y 2 O 3 , Al 2 O 3 , LaMnO 3 , Gd 2 Zr 2 O 7 and SrTiO 3 .
　第３の中間層３２は、複数の層により構成されていてもよい。第３の金属基板３１としてＳＵＳ基板またはハステロイ基板が用いられる場合、第３の中間層３２は、例えば、ＩＢＡＤ法にて形成された結晶配向層であってもよい。第３の金属基板３１がその表面に結晶配向性を有するとき、第３の中間層３２は、第３の金属基板３１と第３の超電導材料層３３との結晶配向性の差を緩和してもよい。 The third intermediate layer 32 may be composed of a plurality of layers. When a SUS substrate or a Hastelloy substrate is used as the third metal substrate 31, the third intermediate layer 32 may be a crystal orientation layer formed by, for example, an IBAD method. When the third metal substrate 31 has crystal orientation on its surface, the third intermediate layer 32 reduces the difference in crystal orientation between the third metal substrate 31 and the third superconducting material layer 33. Also good.
　第３の超電導材料層３３は、第３の線材３０のうち、超電導電流が流れる部分である。第３の超電導材料層３３は、特に限定されないが、酸化物超電導材料で構成されてもよい。特定的には、第３の超電導材料層３３は、ＲＥ４１Ｂａ２Ｃｕ３Ｏｙ４（６．０≦ｙ４≦８．０、ＲＥ４は希土類元素を表す）により構成されてもよい。ＲＥ４は、ＲＥ１と同じであってもよいし、異なってもよい。ＲＥ４は、ＲＥ２と同じであってもよいし、異なってもよい。さらに特定的には、ＲＥ４は、Ｙ、Ｇｄ、ＳｍまたはＨｏであってもよい。さらに特定的には、ｙ４は、６．８以上７．０以下であってもよい。 The third superconducting material layer 33 is a portion of the third wire 30 through which the superconducting current flows. The third superconducting material layer 33 is not particularly limited, but may be composed of an oxide superconducting material. Specifically, the third superconducting material layer 33 may be made of RE4 1 Ba 2 Cu 3 O y4 (6.0 ≦ y4 ≦ 8.0, where RE4 represents a rare earth element). RE4 may be the same as or different from RE1. RE4 may be the same as or different from RE2. More specifically, RE4 may be Y, Gd, Sm, or Ho. More specifically, y4 may be 6.8 or more and 7.0 or less.
　第２の線材２０の長手方向における第２の線材２０の第２の長さは、第１の線材１０の長手方向における第１の線材１０の第１の長さおよび第３の線材３０の長手方向における第３の線材３０の第３の長さよりも短い。 The second length of the second wire 20 in the longitudinal direction of the second wire 20 is the first length of the first wire 10 and the length of the third wire 30 in the longitudinal direction of the first wire 10. Shorter than the third length of the third wire 30 in the direction.
　第１の線材１０は、第１の端面１０ｅを有する。第３の線材３０は、第２の端面３０ｅを有する。第２の端面３０ｅは、第１の端面１０ｅとの間に間隔を空けて、第１の端面１０ｅに対向している。第１の超電導材料層１３の第１の主面１３ｓと第２の超電導材料層２３の第２の主面２３ｓとは、第１の超電導材料接合層４０を介して、互いに接合されている。第２の超電導材料層２３の第２の主面２３ｓと第３の超電導材料層３３の第３の主面３３ｓとは、第２の超電導材料接合層４２を介して、互いに接合されている。第２の線材２０は、第１の線材１０の第１の端面１０ｅと第３の線材３０の第２の端面３０ｅとを跨いでいる。第２の超電導材料層２３は、第１の超電導材料層１３と第３の超電導材料層３３とを橋渡ししている。 The first wire 10 has a first end face 10e. The third wire 30 has a second end face 30e. The second end surface 30e is opposed to the first end surface 10e with a space between the second end surface 30e and the first end surface 10e. The first main surface 13 s of the first superconducting material layer 13 and the second main surface 23 s of the second superconducting material layer 23 are bonded to each other through the first superconducting material bonding layer 40. The second main surface 23 s of the second superconducting material layer 23 and the third main surface 33 s of the third superconducting material layer 33 are joined to each other via the second superconducting material joining layer 42. The second wire 20 straddles the first end surface 10 e of the first wire 10 and the second end surface 30 e of the third wire 30. The second superconducting material layer 23 bridges the first superconducting material layer 13 and the third superconducting material layer 33.
　第２の超電導材料接合層４２は、第２の超電導材料層２３の第２の主面２３ｓの第３の部分２８と第３の超電導材料層３３の第３の主面３３ｓの第４の部分３８とを接合する。第３の部分２８は、第２の部分２７とは異なる。第２の超電導材料接合層４２は、特に限定されないが、酸化物超電導材料で構成されてもよい。特定的には、第２の超電導材料接合層４２は、ＲＥ５１Ｂａ２Ｃｕ３Ｏｙ５（６．０≦ｙ５≦８．０、ＲＥ５は希土類元素を表す）により構成されてもよい。ＲＥ５は、ＲＥ２と同じであってもよいし、異なってもよい。ＲＥ５は、ＲＥ３と同じであってもよいし、異なってもよい。ＲＥ５は、ＲＥ４と同じであってもよいし、異なってもよい。さらに特定的には、ＲＥ５は、Ｙ、Ｇｄ、Ｄｙ、Ｅｕ、Ｌａ、Ｎｄ、Ｅｒ、Ｔｍ、Ｙｂ、Ｌｕ、ＳｍまたはＨｏであってもよい。さらに特定的には、ｙ５は、６．８以上７．０以下であってもよい。 The second superconducting material bonding layer 42 includes a third portion 28 of the second main surface 23 s of the second superconducting material layer 23 and a fourth portion of the third main surface 33 s of the third superconducting material layer 33. 38 is joined. The third portion 28 is different from the second portion 27. The second superconducting material bonding layer 42 is not particularly limited, but may be composed of an oxide superconducting material. Specifically, the second superconducting material bonding layer 42 may be made of RE5 1 Ba 2 Cu 3 O y5 (6.0 ≦ y5 ≦ 8.0, where RE5 represents a rare earth element). RE5 may be the same as RE2, or may be different. RE5 may be the same as RE3 or different. RE5 may be the same as RE4 or different. More specifically, RE5 may be Y, Gd, Dy, Eu, La, Nd, Er, Tm, Yb, Lu, Sm or Ho. More specifically, y5 may be 6.8 or more and 7.0 or less.
　第２の超電導材料接合層４２を介して第２の超電導材料層２３と第３の超電導材料層３３とを接合する方法は、実施の形態１における第１の超電導材料接合層４０を介して第１の超電導材料層１３と第２の超電導材料層２３とを接合する方法（図５を参照）と同様である。 The method of joining the second superconducting material layer 23 and the third superconducting material layer 33 through the second superconducting material joining layer 42 is the same as that of the first superconducting material joining layer 40 in the first embodiment. This is the same as the method of joining the first superconducting material layer 13 and the second superconducting material layer 23 (see FIG. 5).
　本実施の形態に係る超電導線材１ｂは、以下のように、実施の形態１に従う超電導線材１と同様の効果を奏する。 The superconducting wire 1b according to the present embodiment has the same effects as the superconducting wire 1 according to the first embodiment as follows.
　本実施の形態に係る超電導線材１ｂでは、第１の超電導材料層１３と第２の超電導材料層２３とを接合する第１の超電導材料接合層４０、および、第２の超電導材料層２３と第３の超電導材料層３３とを接合する第２の超電導材料接合層４２の各々において、複数の粒子４４および複数の空隙４６の少なくとも一方が分散されている。各超電導材料接合層内において、複数の粒子４４および複数の空隙４６の少なくとも一方はピンニング中心として機能するため、各超電導材料接合層の磁場中における臨界電流密度Ｊｃを向上させることができる。この結果、超電導線材１ｂの磁場中における超電導特性を改善することができる。 In the superconducting wire 1b according to the present embodiment, the first superconducting material bonding layer 40 that joins the first superconducting material layer 13 and the second superconducting material layer 23, and the second superconducting material layer 23 and the second superconducting material layer 23. In each of the second superconducting material joining layers 42 joining the three superconducting material layers 33, at least one of the plurality of particles 44 and the plurality of voids 46 is dispersed. In each superconducting material bonding layer, at least one of the plurality of particles 44 and the plurality of voids 46 functions as a pinning center, so that the critical current density Jc in the magnetic field of each superconducting material bonding layer can be improved. As a result, the superconducting characteristic in the magnetic field of the superconducting wire 1b can be improved.
　本実施の形態に係る超電導線材１ｂは、永久電流モードで使用可能な超電導コイルに適用されてもよい。具体的には、第１の線材１０および第３の線材３０が超電導コイル（図示せず）に接続されて、超電導閉ループ回路が構成されてもよい。 The superconducting wire 1b according to the present embodiment may be applied to a superconducting coil that can be used in the permanent current mode. Specifically, the superconducting closed loop circuit may be configured by connecting the first wire 10 and the third wire 30 to a superconducting coil (not shown).
　［実施の形態３］
　図８を参照して、実施の形態３に従う超電導マグネット１００について説明する。 [Embodiment 3]
With reference to FIG. 8, superconducting magnet 100 according to the third embodiment will be described.
　本実施の形態に係る超電導マグネット１００は、実施の形態１および２に従う超電導線材１，１ｂのいずれかを含む超電導コイル７０と、超電導コイル７０を収容するクライオスタット１０５と、超電導コイル７０を冷却する冷凍機１０２とを主に備える。特定的には、超電導マグネット１００は、クライオスタット１０５の内部に保持された熱シールド１０６と、磁性体シールド１４０とをさらに備えてもよい。 Superconducting magnet 100 according to the present embodiment includes a superconducting coil 70 including any of superconducting wires 1 and 1b according to the first and second embodiments, a cryostat 105 housing superconducting coil 70, and a refrigeration for cooling superconducting coil 70. Machine 102. Specifically, the superconducting magnet 100 may further include a heat shield 106 held inside the cryostat 105 and a magnetic shield 140.
　超電導コイル７０では、実施の形態１および２に従う超電導線材１，１ｂのいずれかが、超電導コイル７０の中心軸周りに巻き回されている。超電導コイル７０を含む超電導コイル体１１０は、クライオスタット１０５内に収容されている。超電導コイル体１１０は、熱シールド１０６の内部に保持されている。超電導コイル体１１０は、複数の超電導コイル７０と、上方支持部１１４と、下方支持部１１１とを含む。複数の超電導コイル７０は積層されている。積層された超電導コイル７０の上端面および下端面を上方支持部１１４と下方支持部１１１とが挟むように配置されている。 In superconducting coil 70, one of superconducting wires 1 and 1b according to the first and second embodiments is wound around the central axis of superconducting coil 70. Superconducting coil body 110 including superconducting coil 70 is housed in cryostat 105. Superconducting coil body 110 is held inside heat shield 106. Superconducting coil body 110 includes a plurality of superconducting coils 70, an upper support portion 114, and a lower support portion 111. A plurality of superconducting coils 70 are stacked. The upper and lower end surfaces of the superconducting coils 70 stacked are arranged so that the upper support portion 114 and the lower support portion 111 sandwich the upper end surface and the lower end surface.
　積層された超電導コイル７０の上端面上と、積層された超電導コイル７０の下端面上とに冷却板１１３が配置されている。互いに隣接する超電導コイル７０の間にも冷却板（図示せず）が配置されている。冷却板１１３は、一方端が冷凍機１０２の第２冷却ヘッド１３１に接続されている。互いに隣接する超電導コイル７０の間に配置された冷却板（図示せず）も、その一方端が第２冷却ヘッド１３１に接続されている。冷凍機１０２の第１冷却ヘッド１３２は熱シールド１０６の壁部に接続されてもよい。そのため、冷凍機１０２によって熱シールド１０６の壁部も冷却され得る。 A cooling plate 113 is disposed on the upper end surface of the superconducting coil 70 that is laminated and on the lower end surface of the superconducting coil 70 that is laminated. A cooling plate (not shown) is also disposed between the superconducting coils 70 adjacent to each other. One end of the cooling plate 113 is connected to the second cooling head 131 of the refrigerator 102. A cooling plate (not shown) disposed between the superconducting coils 70 adjacent to each other is also connected to the second cooling head 131 at one end thereof. The first cooling head 132 of the refrigerator 102 may be connected to the wall portion of the heat shield 106. Therefore, the wall portion of the heat shield 106 can also be cooled by the refrigerator 102.
　超電導コイル体１１０の下方支持部１１１は、超電導コイル７０の平面形状より大きいサイズを有する。下方支持部１１１は、複数の支持部材１１５によって熱シールド１０６に固定されている。複数の支持部材１１５は、棒状の部材であって、熱シールド１０６の上壁と下方支持部１１１の外周部とを接続している。複数の支持部材１１５が超電導コイル体１１０の外周部に配置されている。支持部材１１５は、互いに同じ間隔を隔てて超電導コイル７０を囲むように配置されている。 The lower support part 111 of the superconducting coil body 110 has a size larger than the planar shape of the superconducting coil 70. The lower support portion 111 is fixed to the heat shield 106 by a plurality of support members 115. The plurality of support members 115 are rod-shaped members, and connect the upper wall of the heat shield 106 and the outer peripheral portion of the lower support portion 111. A plurality of support members 115 are arranged on the outer periphery of the superconducting coil body 110. Support members 115 are arranged to surround superconducting coil 70 at the same interval.
　超電導コイル体１１０を保持する熱シールド１０６は、接続部１２０によってクライオスタット１０５に接続されている。接続部１２０は、超電導コイル体１１０の中心軸を囲むように、超電導コイル体１１０の外周部に沿って等間隔で配置されている。接続部１２０は、クライオスタット１０５の蓋体１３５と熱シールド１０６の上壁とを接続している。 The heat shield 106 that holds the superconducting coil body 110 is connected to the cryostat 105 by the connecting portion 120. The connecting portions 120 are arranged at equal intervals along the outer peripheral portion of the superconducting coil body 110 so as to surround the central axis of the superconducting coil body 110. The connection part 120 connects the lid body 135 of the cryostat 105 and the upper wall of the heat shield 106.
　クライオスタット１０５の蓋体１３５の上部から熱シールド１０６の内部まで延在するように冷凍機１０２が配置されている。冷凍機１０２は、超電導コイル体１１０を冷却する。具体的には、蓋体１３５の上部表面の上方に冷凍機１０２の本体部１３３およびモータ１３４が配置される。本体部１３３から熱シールド１０６の内部にまで到達するように冷凍機１０２が配置されている。 The refrigerator 102 is arranged so as to extend from the upper part of the lid 135 of the cryostat 105 to the inside of the heat shield 106. The refrigerator 102 cools the superconducting coil body 110. Specifically, the main body 133 and the motor 134 of the refrigerator 102 are disposed above the upper surface of the lid 135. The refrigerator 102 is arranged so as to reach the inside of the heat shield 106 from the main body 133.
　冷凍機１０２は、たとえばギフォード・マクマホン式冷凍機であってもよい。冷凍機１０２は、配管１３７を通じて、冷媒を圧縮するコンプレッサ（図示せず）に接続されている。コンプレッサで高圧に圧縮された冷媒（たとえば、ヘリウムガス）は冷凍機１０２に供給される。この冷媒がモータ１３４により駆動されるディスプレーサにより膨張されることにより、冷凍機１０２に内設された蓄冷材が冷却される。膨張することにより低圧となった冷媒はコンプレッサに戻されて再び高圧化される。 The refrigerator 102 may be, for example, a Gifford McMahon refrigerator. The refrigerator 102 is connected through a pipe 137 to a compressor (not shown) that compresses the refrigerant. The refrigerant (for example, helium gas) compressed to a high pressure by the compressor is supplied to the refrigerator 102. The refrigerant is expanded by a displacer driven by a motor 134, whereby the regenerator material provided in the refrigerator 102 is cooled. The refrigerant, which has become low pressure due to expansion, is returned to the compressor and is increased in pressure again.
　冷凍機１０２の第１冷却ヘッド１３２が熱シールド１０６を冷却することによって外部の熱が熱シールド１０６内に侵入することが防止される。冷凍機１０２の第２冷却ヘッド１３１が冷却板１１３を介して超電導コイル７０を冷却する。こうして、超電導コイル７０は超電導状態となる。 The first cooling head 132 of the refrigerator 102 cools the heat shield 106 to prevent external heat from entering the heat shield 106. The second cooling head 131 of the refrigerator 102 cools the superconducting coil 70 via the cooling plate 113. Thus, the superconducting coil 70 is in a superconducting state.
　クライオスタット１０５は、クライオスタット本体部１３６と蓋体１３５とを含む。本体部１３３およびモータ１３４の周囲は、磁性体シールド１４０によって囲まれている。磁性体シールド１４０は、超電導コイル体１１０から発生した磁場の一部がモータ１３４に侵入することを防止し得る。 The cryostat 105 includes a cryostat main body 136 and a lid body 135. The periphery of the main body 133 and the motor 134 is surrounded by a magnetic shield 140. The magnetic shield 140 can prevent a part of the magnetic field generated from the superconducting coil body 110 from entering the motor 134.
　超電導マグネット１００には、クライオスタット１０５および熱シールド１０６を貫通し、クライオスタット１０５の蓋体１３５からクライオスタット本体部１３６の底壁まで到達する開口部１０７が形成されている。開口部１０７は、超電導コイル体１１０の超電導コイル７０の中央部を貫通するように配置されている。被検知体２１０（図１３を参照）が開口部１０７の内部に配置されて、被検知体２１０に超電導コイル体１１０から発生した磁場が印加される。 The superconducting magnet 100 is formed with an opening 107 that penetrates the cryostat 105 and the heat shield 106 and reaches the bottom wall of the cryostat main body 136 from the lid body 135 of the cryostat 105. The opening 107 is disposed so as to penetrate the central portion of the superconducting coil 70 of the superconducting coil body 110. A detected body 210 (see FIG. 13) is disposed inside the opening 107, and a magnetic field generated from the superconducting coil body 110 is applied to the detected body 210.
　本実施の形態に係る超電導コイル７０の効果について説明する。本実施の形態の超電導コイル７０は、実施の形態１および２に従う超電導線材１，１ｂのいずれかを含む超電導コイル７０を備える。実施の形態１および２に従う超電導線材１，１ｂのいずれかは、超電導コイルの中心軸周りに巻き回されている。そのため、本実施の形態の超電導コイル７０は、強い磁場を発生し得る。 The effect of the superconducting coil 70 according to the present embodiment will be described. Superconducting coil 70 of the present embodiment includes superconducting coil 70 including any of superconducting wires 1 and 1b according to the first and second embodiments. Any of superconducting wires 1 and 1b according to the first and second embodiments is wound around the central axis of the superconducting coil. Therefore, the superconducting coil 70 of the present embodiment can generate a strong magnetic field.
　本実施の形態の超電導マグネット１００の効果について説明する。本実施の形態の超電導マグネット１００は、実施の形態１および２に従う超電導線材１，１ｂのいずれかを含む超電導コイル７０と、超電導コイル７０を収容するクライオスタット１０５と、超電導コイル７０を冷却する冷凍機１０２とを備える。そのため、本実施の形態に係る超電導マグネット１００は、強い磁場を発生し得る。 The effect of the superconducting magnet 100 of this embodiment will be described. Superconducting magnet 100 of the present embodiment includes a superconducting coil 70 including any of superconducting wires 1 and 1b according to the first and second embodiments, a cryostat 105 that accommodates superconducting coil 70, and a refrigerator that cools superconducting coil 70. 102. Therefore, superconducting magnet 100 according to the present embodiment can generate a strong magnetic field.
　［実施の形態４］
　図９を参照して、実施の形態４に従う超電導機器２００について説明する。本実施の形態の超電導機器２００は、たとえば、磁気共鳴イメージング（ＭＲＩ）装置であってもよい。 [Embodiment 4]
Referring to FIG. 9, superconducting device 200 according to the fourth embodiment will be described. Superconducting device 200 of the present embodiment may be, for example, a magnetic resonance imaging (MRI) apparatus.
　本実施の形態に係る超電導機器２００は、実施の形態３に従う超電導マグネット１００を主に備える。本実施の形態に係る超電導機器２００は、可動台２０２と制御部２０８とをさらに備えてもよい。可動台２０２は、被検知体２１０が載置される天板２０５と、天板２０５を移動させる駆動部２０４とを含む。制御部２０８は、超電導マグネット１００と、駆動部２０４とに接続されている。 Superconducting device 200 according to the present embodiment mainly includes superconducting magnet 100 according to the third embodiment. Superconducting device 200 according to the present embodiment may further include a movable table 202 and a control unit 208. The movable table 202 includes a top plate 205 on which the detected object 210 is placed and a drive unit 204 that moves the top plate 205. The control unit 208 is connected to the superconducting magnet 100 and the drive unit 204.
　制御部２０８は、超電導マグネット１００を駆動して、超電導マグネット１００の開口部１０７内に均一な磁場を発生させる。制御部２０８は、可動台２０２を移動させて、可動台２０２上に載置された被検知体２１０を超電導マグネット１００の開口部１０７内に進入させる。被検知体２１０の撮像を終えると、制御部２０８は可動台２０２を移動させて、可動台２０２上に載置された被検知体２１０を超電導マグネット１００の開口部１０７から退出させる。 The control unit 208 drives the superconducting magnet 100 to generate a uniform magnetic field in the opening 107 of the superconducting magnet 100. The control unit 208 moves the movable table 202 and causes the detected object 210 placed on the movable table 202 to enter the opening 107 of the superconducting magnet 100. When the imaging of the detected object 210 is completed, the control unit 208 moves the movable table 202 and causes the detected object 210 placed on the movable table 202 to exit from the opening 107 of the superconducting magnet 100.
　本実施の形態に係る超電導機器２００の効果について説明する。本実施の形態に係る超電導機器２００は、超電導マグネット１００を備える。そのため、本実施の形態に係る超電導機器２００は、強い磁場を発生し得る。本実施の形態に係る超電導機器２００を用いて、被検知体２１０は精度よく撮像され得る。 The effect of the superconducting device 200 according to the present embodiment will be described. Superconducting device 200 according to the present embodiment includes superconducting magnet 100. Therefore, superconducting device 200 according to the present embodiment can generate a strong magnetic field. Using the superconducting device 200 according to the present embodiment, the detected object 210 can be accurately imaged.
　今回開示された実施の形態１－４はすべての点で例示であって、制限的なものではないと考えられるべきである。本発明の範囲は上記した実施の形態１－５ではなく請求の範囲によって示され、請求の範囲と均等の意味、および範囲内でのすべての変更が含まれることが意図される。 It should be considered that Embodiment 1-4 disclosed this time is illustrative in all respects and not restrictive. The scope of the present invention is shown not by the above-described first to fifth embodiments but by the scope of claims, and is intended to include meanings equivalent to the scope of claims and all modifications within the scope.
１，１ｂ　超電導線材、１０　第１の線材、１０ｅ　第１の端面、１１　第１の金属基板、１２　第１の中間層、１３　第１の超電導材料層、１３ｓ　第１の主面、１７　第１の部分、２０　第２の線材、２１　第２の金属基板、２２　第２の中間層、２３　第２の超電導材料層、２３ｓ　第２の主面、２７　第２の部分、２８　第３の部分、３０　第３の線材、３０ｅ　第２の端面、３１　第３の金属基板、３２　第３の中間層、３３　第３の超電導材料層、３３ｓ　第３の主面、３８　第４の部分、４０　第１の超電導材料接合層、４２　第２の超電導材料接合層、７０　超電導コイル、１００　超電導マグネット、１０２　冷凍機、１０５　クライオスタット、１０６　熱シールド、１０７　開口部、１１０　超電導コイル体、１１１　下方支持部、１１３　冷却板、１１４　上方支持部、１１５　支持部材、１２０　接続部、１３１　第２冷却ヘッド、１３２　第１冷却ヘッド、１３３　本体部、１３４　モータ、１３５　蓋体、１３６　クライオスタット本体部、１３７　配管、１４０　磁性体シールド、２００　超電導機器、２０２　可動台、２０４　駆動部、２０５　天板、２０８　制御部、２１０　被検知体。 1, 1b superconducting wire, 10 first wire, 10e first end face, 11 first metal substrate, 12 first intermediate layer, 13 first superconducting material layer, 13s first main surface, 17 first Part 20, 20 second wire, 21 second metal substrate, 22 second intermediate layer, 23 second superconducting material layer, 23s second main surface, 27 second part, 28 third part, 30 3rd wire, 30e 2nd end face, 31 3rd metal substrate, 32 3rd intermediate layer, 33 3rd superconducting material layer, 33s 3rd main surface, 38 4th part, 40 1st Superconducting material joining layer, 42 second superconducting material joining layer, 70 superconducting coil, 100 superconducting magnet, 102 refrigerator, 105 cryostat, 106 heat shield, 107 opening, 110 superconducting coil body, 111 Lower support part, 113 cooling plate, 114 upper support part, 115 support member, 120 connection part, 131 second cooling head, 132 first cooling head, 133 main body part, 134 motor, 135 lid body, 136 cryostat main body part, 137 Piping, 140 magnetic shield, 200 superconducting equipment, 202 movable base, 204 drive unit, 205 top plate, 208 control unit, 210 object to be detected.

Claims (8)

  1. 　第１の超電導材料層を有する第１の線材と、
    　第２の超電導材料層を有する第２の線材と、
    　超電導材料接合層とを備え、
    　前記第１の線材の一部と前記第２の線材の一部とは、前記第１の超電導材料層と前記第２の超電導材料層とが重ね合わさるように、前記超電導材料接合層を介して接合され、
    　前記超電導材料接合層中には、ピンニング中心として機能する複数の粒子および複数の空隙の少なくとも一方が分散されている、超電導線材。     A first wire having a first superconducting material layer;
    A second wire having a second superconducting material layer;
    A superconducting material bonding layer,
    The part of the first wire and the part of the second wire are arranged via the superconducting material bonding layer so that the first superconducting material layer and the second superconducting material layer overlap each other. Joined and
    In the superconducting material bonding layer, at least one of a plurality of particles functioning as a pinning center and a plurality of voids is dispersed.
  2. 　前記超電導材料接合層の厚さ方向での断面における単位面積当たりの前記複数の粒子および前記複数の空隙の面積率は１％以上７０％以下である、請求項１に記載の超電導線材。 The superconducting wire according to claim 1, wherein an area ratio of the plurality of particles and the plurality of voids per unit area in a cross section in the thickness direction of the superconducting material bonding layer is 1% or more and 70% or less.
  3. 　前記複数の粒子および前記複数の空隙の各々の粒径は１０ｎｍ以上１０００ｎｍ以下である、請求項１または請求項２に記載の超電導線材。 The superconducting wire according to claim 1 or 2, wherein each of the plurality of particles and the plurality of voids has a particle size of 10 nm or more and 1000 nm or less.
  4. 　前記超電導材料接合層は、ＲＥ１Ｂａ２Ｃｕ３Ｏｙ（式中、ＲＥ：希土類元素、Ｂａ：バリウム、Ｃｕ：銅、Ｏ：酸素）で表されるＲＥ１２３系酸化物超電導体により構成されており、
    　前記複数の粒子はＲＥ２Ｏ３を含む、請求項１から請求項３のいずれか１項に記載の超電導線材。     The superconducting material bonding layer is composed of an RE123-based oxide superconductor represented by RE 1 Ba 2 Cu 3 O y (wherein RE: rare earth element, Ba: barium, Cu: copper, O: oxygen). And
    Wherein the plurality of particles comprise RE 2 O 3, the superconducting wire according to any one of claims 1 to 3.
  5. 　前記超電導材料接合層は、ＲＥＢａ２Ｃｕ３Ｏｙ（式中、ＲＥ：希土類元素、Ｂａ：バリウム、Ｃｕ：銅、Ｏ：酸素）で表されるＲＥ１２３系酸化物超電導体により構成されており、
    　前記複数の粒子はＣｕＯを含む、請求項１から請求項４のいずれか１項に記載の超電導線材。     The superconducting material bonding layer is composed of a RE123 oxide superconductor represented by REBa 2 Cu 3 O y (wherein RE: rare earth element, Ba: barium, Cu: copper, O: oxygen),
    The superconducting wire according to any one of claims 1 to 4, wherein the plurality of particles include CuO.
  6. 　中心軸を有する超電導コイルであって、
    　請求項１から請求項５のいずれか１項に記載の前記超電導線材を備え、
    　前記超電導線材は、前記中心軸周りに巻き回されている、超電導コイル。     A superconducting coil having a central axis,
    The superconducting wire according to any one of claims 1 to 5,
    The superconducting wire is a superconducting coil wound around the central axis.
  7. 　請求項６に記載の前記超電導コイルと、
    　前記超電導コイルを収容するクライオスタットと、
    　前記超電導コイルを冷却する冷凍機とを備える、超電導マグネット。     The superconducting coil according to claim 6,
    A cryostat that houses the superconducting coil;
    A superconducting magnet comprising a refrigerator for cooling the superconducting coil.
  8. 　請求項７に記載の前記超電導マグネットを備える、超電導機器。 A superconducting device comprising the superconducting magnet according to claim 7.
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