WO2018209759A1 - 利用准分子激光退火制作低温多晶硅的系统及其承载装置 - Google Patents

利用准分子激光退火制作低温多晶硅的系统及其承载装置 Download PDF

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Publication number
WO2018209759A1
WO2018209759A1 PCT/CN2017/089703 CN2017089703W WO2018209759A1 WO 2018209759 A1 WO2018209759 A1 WO 2018209759A1 CN 2017089703 W CN2017089703 W CN 2017089703W WO 2018209759 A1 WO2018209759 A1 WO 2018209759A1
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Prior art keywords
carrier body
carrier
thermally conductive
heating element
excimer laser
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English (en)
French (fr)
Inventor
余威
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3456—Polycrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]

Definitions

  • the invention relates to the technical field of low-temperature polysilicon manufacturing methods, in particular to a system for producing low-temperature polysilicon by excimer laser annealing and a bearing device thereof.
  • FIG. 1 is a schematic structural view of a method for preparing low-temperature polysilicon by excimer laser annealing in the prior art.
  • the method generally comprises placing a glass substrate 11 on a carrying platform 10, and growing a buffer layer 12 on the glass substrate 11. Then, amorphous silicon 13 is grown, and after high temperature dehydrogenation, it passes through HF (High). Frequency High frequency) pre-cleaning, and then scanning the amorphous silicon 13 with the laser 14 of the ELA, and the amorphous silicon is recrystallized by high temperature to form polycrystalline silicon.
  • HF High. Frequency High frequency
  • FIG. 2 is a schematic view showing a state in which amorphous silicon is recrystallized after heating in the prior art, and reference numeral 15 in the figure is a crystal grain. If the crystal grain direction of the crystal grain 15 is random, the intergranular grain boundary is excessive. The grain size is small, which in turn affects the carrier mobility of the polysilicon.
  • Embodiments of the present invention provide a system for fabricating low-temperature polysilicon by excimer laser annealing and a carrier device thereof, to solve the problem of crystallizing a crystalline silicon material during recrystallization in the prior art by using excimer laser annealing to produce low-temperature polysilicon.
  • the problem of the grain boundary between the grains caused by the disordered direction is too large, and the crystal grains are small, which further reduces the carrier mobility of the polycrystalline silicon.
  • an embodiment of the present invention provides a carrier device for preparing a low temperature polysilicon system for excimer laser annealing, the carrier device comprising a carrier body and a heating element; wherein the heating element is used for The carrier body is heated, and the upper surface of the carrier body is provided with a heat conductive support body.
  • the heat conductive support body is used for supporting the glass substrate, and the bearing is carried The heat of the body is transferred to the glass substrate.
  • Another aspect of the present invention provides a system for fabricating low temperature polycrystalline silicon by excimer laser annealing, the system comprising an excimer laser generator and the carrier device according to any of the above embodiments,
  • the molecular laser generator is configured to generate an excimer laser to heat the amorphous silicon material disposed on the carrying device, and the carrying device heats the glass substrate carrying the amorphous silicon material to heat the non-heated
  • the crystalline silicon material has a stable low temperature region and a high temperature region during the crystallization process, thereby obtaining a polycrystalline silicon material capable of controlling the crystal orientation.
  • the present invention provides a system for producing low-temperature polysilicon by excimer laser annealing and a bearing device thereof, which can be used for supporting a glass carrying polysilicon material by providing a heating element and a carrier body structure with a heat-conducting support body.
  • the substrate is locally heated, and a stable low temperature region and a high temperature region can be formed in the recrystallization process, so as to obtain a polycrystalline silicon material capable of controlling the crystal orientation, so that the polycrystalline silicon material has less intergranular grain boundaries, large crystal grains, and polycrystalline silicon loading.
  • the feature of high sub-movement rate is provided.
  • FIG. 1 is a schematic structural view of a method for preparing low temperature polysilicon by excimer laser annealing in the prior art
  • FIG. 2 is a schematic view showing a state of recrystallization of amorphous silicon after heating in the prior art
  • FIG. 3 is a schematic view showing the structural composition of a system for producing low-temperature polycrystalline silicon by the method of excimer laser annealing
  • FIG. 4 is a schematic structural view of an embodiment of a carrying device in the embodiment of FIG. 3;
  • FIG. 5 is a schematic structural view of another embodiment of a carrier device used in excimer laser annealing to produce a low temperature polysilicon system
  • FIG. 6 is a schematic structural view of another embodiment of a heat conductive support
  • Fig. 7 is a schematic view showing the state of crystallization of crystal grains during recrystallization by the carrying device of the embodiment of the present invention.
  • first”, “second”, and “third” in the present invention are used for descriptive purposes only, and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, features defining “first”, “second”, and “third” may include at least one of the features, either explicitly or implicitly. In the description of the present invention, the meaning of "a plurality” is at least two, such as two, three, etc., unless specifically defined otherwise.
  • references to "an embodiment” herein mean that a particular feature, structure, or characteristic described in connection with the embodiments can be included in at least one embodiment of the invention.
  • the appearances of the phrases in various places in the specification are not necessarily referring to the same embodiments, and are not exclusive or alternative embodiments that are mutually exclusive. Those skilled in the art will understand and implicitly understand that the embodiments described herein can be combined with other embodiments.
  • FIG. 3 is a schematic structural diagram of a system for fabricating low temperature polycrystalline silicon by the method of excimer laser annealing.
  • the system includes an excimer laser generator 100 and a carrier device 200.
  • the excimer laser generator 100 is configured to generate the excimer laser 110 to heat the amorphous silicon material 330 disposed on the carrier device 200, and the carrier device 200 performs the glass substrate 310 carrying the amorphous silicon material.
  • the heating causes the heated amorphous silicon material 330 to have a stable low temperature region and a high temperature region during the crystallization process, thereby obtaining a polycrystalline silicon material capable of controlling the crystal orientation.
  • 320 is shown as a buffer layer.
  • FIG. 4 is a schematic structural view of an embodiment of the carrying device in the embodiment of FIG. 3.
  • the carrying device 200 may include a carrying body 210 and a heating element 220.
  • the heating element 220 is used to heat the carrying body 210.
  • the heating element 220 is coupled to the carrier body 210, and the heating element 220 heats the carrier body 210 by means of contact heat transfer, for example, the heating element 220 may be a heating tube or a heating wire or the like.
  • the heating element 220 can be in other forms of heating, such as flame heating or the like.
  • the middle portion of the carrying body 210 is provided with a receiving cavity, and the heating element 220 is disposed in the receiving cavity.
  • the carrier body 210 is made of a thermally conductive material, preferably a metal material such as copper, steel, or the like.
  • FIG. 5 is a schematic structural view of another embodiment of a carrier device for manufacturing a low temperature polysilicon system by excimer laser annealing.
  • the difference from the previous embodiment is that the heating element 220 is disposed in the embodiment.
  • the outer side of the carrying body 210 may specifically be a bottom portion, and may of course be a side surface. It suffices that the carrier body 210 can be heated.
  • the upper surface of the carrier body 210 is further provided with a heat-conducting support body 230 for supporting the glass substrate 310 during the process of manufacturing low-temperature polysilicon by excimer laser annealing.
  • the heat of the carrier body 210 is transferred to the glass substrate 310.
  • the heat conductive support body 230 may include a plurality of heat conduction support units 231 disposed on the upper surface of the carrier body 210 in an irregular arrangement.
  • the thermally conductive support unit 231 may be a metal pin structure.
  • the thermally conductive support 230 (including the plurality of thermally conductive support units 231 ) may be integrated with the carrier body 210 , or each of the thermally conductive support units 231 may also be a separate metal pin (needle, or column) structure that is adhered to the carrier body 210 .
  • the connection or the contact connection is only a thermal contact connection with the carrier body 210.
  • FIG. 6 is a schematic structural diagram of another embodiment of a thermally conductive support.
  • the thermally conductive support 230 may include a connecting body 232 in addition to the plurality of thermally conductive supporting units 231.
  • a plurality of thermally conductive support units 231 are connected.
  • the connecting body 232 and the plurality of thermally conductive supporting units 231 are integrated.
  • the carrier device 200 further includes a thermal insulation layer 240 disposed on the upper surface of the carrier body 210 and filled between the plurality of thermal conductive support units 231 for the thermal conductive support unit 231 .
  • the upper surface of the carrier body 210 and the gap of the glass substrate 310 are insulated from each other. In this way, the heat transfer region (contact position with the heat conduction support unit 231) of the glass substrate 310 can be better distinguished from the non-heat transfer region, thereby forming a low temperature region and a high temperature region.
  • FIG. 7 is a schematic view showing the state of crystallization of crystal grains during recrystallization by the carrying device of the embodiment of the present invention.
  • the crystal is crystallized from a low temperature to a high temperature. Therefore, the structure of the carrier device 200 in the embodiment can make the crystal have a stable crystal direction during crystallization, so that the polysilicon material has intergranularity.
  • the grain boundary is small, the crystal grain is large, and the mobility of the polysilicon carrier is high.
  • Reference numeral 331 in the figure is denoted as a crystal grain. The arrows on the grains indicate the direction of crystallization.
  • the present invention provides a system for producing low-temperature polysilicon by excimer laser annealing and a bearing device thereof, which can be used for supporting a glass carrying polysilicon material by providing a heating element and a carrier body structure with a heat-conducting support body.
  • the substrate is locally heated, and a stable low temperature region and a high temperature region can be formed in the recrystallization process, so as to obtain a polycrystalline silicon material capable of controlling the crystal orientation, so that the polycrystalline silicon material has less intergranular grain boundaries, large crystal grains, and polycrystalline silicon loading.
  • the feature of high sub-movement rate is provided.

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  • Recrystallisation Techniques (AREA)

Abstract

一种利用准分子激光退火制作低温多晶硅的系统及其承载装置（200），承载装置包括承载主体（210）以及加热元件（220）；加热元件用于对承载主体进行加热，承载主体的上表面设有导热支撑体（230），承载装置通过设置加热元件以及带有导热支撑体的承载主体结构，可以对承载多晶硅材料的玻璃基板（310）进行局部加热。

Description

利用准分子激光退火制作低温多晶硅的系统及其承载装置
【技术领域】
本发明涉及低温多晶硅制作方法的技术领域，具体是涉及一种利用准分子激光退火制作低温多晶硅的系统及其承载装置。
【背景技术】
随着平板显示的发展，高分辨率，低能耗的面板需求不断被提出，非晶硅电子迁移率低，低温多晶硅因可在低温下制作，且拥有高的电子迁移率及可制作C-MOS电路被广泛研究用以达到面板高分辨率，低能耗的需求。
目前制作低温多晶硅的方法包括固相结晶（SPC，Solid Phase Crystallization），金属诱导结晶（MIC，Metal Induced Crystallization）和准分子镭射退火（ELA，Excimer Laser Annealing）几种，其中准分子镭射退火（ELA）是目前使用最为广泛的方法。
请参阅图1，图1是现有技术中准分子激光退火制作低温多晶硅方法的结构示意图，该方法一般是将玻璃基板11置于承载台10上，在玻璃基板11上生长一缓冲层12，然后生长非晶硅13，高温去氢后经过HF（High Frequency 高频）预清洗，再利用ELA的激光14扫描非晶硅13，非晶硅受到高温熔化重结晶形成多晶硅。
多晶硅晶粒的大小对多晶硅的电学性能有重要影响，在ELA制程中，非晶硅接收激光能量升温后变成近似完全熔融（nearly completely melts）状态，然后重结晶形成多晶硅。重结晶时会按照低能量向高能量方向结晶，即低温向高温方向结晶；但是现有技术中的结构方法中，因低温区域是随机的，所以结晶的起点和方向是凌乱的，请参阅图2，图2是现有技术中非晶硅加热后重结晶的状态示意图，图中标号15为晶粒，如果晶粒15的结晶方向是随机的话，就会导致晶粒间晶界偏多，晶粒偏小，进而会影响多晶硅的载子移动率。
【发明内容】
本发明实施例提供一种利用准分子激光退火制作低温多晶硅的系统及其承载装置，以解决现有技术中在利用准分子激光退火制作低温多晶硅时，由于晶硅材料在重结晶过程中，结晶方向凌乱导致的晶粒间晶界偏多，晶粒偏小，进而使多晶硅的载子移动率低的技术问题。
为解决上述问题，本发明实施例一方面提供了一种用于准分子激光退火制作低温多晶硅系统中的承载装置，所述承载装置包括承载主体以及加热元件；其中，所述加热元件用于对所述承载主体进行加热，所述承载主体的上表面设有导热支撑体，在利用准分子激光退火法制作低温多晶硅的过程中，所述导热支撑体用于支撑玻璃基板，并将所述承载主体的热量传递到玻璃基板上。
本发明实施例另一方面还提供一种利用准分子激光退火的方法制作低温多晶硅的系统，所述系统包括准分子激光发生器以及上述实施例中任一项所述的承载装置，所述准分子激光发生器用于产生准分子激光，以对设于所述承载装置上的非晶硅材料进行加热，所述承载装置通过对承载非晶硅材料的玻璃基板进行加热，使被加热后的非晶硅材料在结晶过程中具有稳定的低温区以及高温区，进而获得可控制结晶方向的多晶硅材料。
相对于现有技术，本发明提供的利用准分子激光退火制作低温多晶硅的系统及其承载装置，该承载装置通过设置加热元件以及带有导热支撑体的承载主体结构，可以对承载多晶硅材料的玻璃基板进行局部加热，进而在重结晶过程中可以形成稳定的低温区和高温区，以便获得可控制结晶方向的多晶硅材料，使多晶硅材料具有晶粒间晶界少，晶粒大，且多晶硅的载子移动率高的特点。
【附图说明】
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是现有技术中准分子激光退火制作低温多晶硅方法的结构示意图；
图2是现有技术中非晶硅加热后重结晶的状态示意图；
图3是本发明利用准分子激光退火的方法制作低温多晶硅的系统的结构组成示意图；
图4是图3实施例中承载装置一实施例的结构示意图；
图5是本发明用于准分子激光退火制作低温多晶硅系统中的承载装置另一实施例的结构示意图；
图6是导热支撑体另一实施例的结构示意图；
图7是利用本发明实施例承载装置进行重结晶过程中晶粒结晶状态的示意图。
【具体实施方式】
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。
本发明中的术语“第一”、“第二”、“第三”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”、“第三”的特征可以明示或者隐含地包括至少一个该特征。本发明的描述中，“多个”的含义是至少两个，例如两个，三个等，除非另有明确具体的限定。本发明实施例中所有方向性指示（诸如上、下、左、右、前、 后……）仅用于解释在某一特定姿态（如附图所示）下各部件之间的相对位 置关系、运动情况等，如果该特定姿态发生改变时，则该方向性指示也相应地随之改变。此外，术语“包括”和“具有”以及它们任何变形，意图在于覆盖不排他的包含。例如包含了一系列步骤或单元的过程、方法、系统、产品或设备没有限定于已列出的步骤或单元，而是可选地还包括没有列出的步骤或单元，或可选地还包括对于这些过程、方法、产品或设备固有的其它步骤或单元。
在本文中提及“实施例”意味着，结合实施例描述的特定特征、结构或特性可以包含在本发明的至少一个实施例中。在说明书中的各个位置出现该短语并不一定均是指相同的实施例，也不是与其它实施例互斥的独立的或备选的实施例。本领域技术人员显式地和隐式地理解的是，本文所描述的实施例可以与其它实施例相结合。
请参阅图3，图3是本发明利用准分子激光退火的方法制作低温多晶硅的系统的结构组成示意图，该系统包括准分子激光发生器100以及承载装置200。
具体而言，准分子激光发生器100用于产生准分子激光110，以对设于承载装置200上的非晶硅材料330进行加热，承载装置200通过对承载非晶硅材料的玻璃基板310进行加热，使被加热后的非晶硅材料330在结晶过程中具有稳定的低温区以及高温区，进而获得可控制结晶方向的多晶硅材料。图中320表示为缓冲层。关于准分子激光发生器100的具体结构技术特征，在本领域技术人员的理解范围内，此处不再详述。下面对承载装置200的技术方案进行介绍。
请参阅图4，图4是图3实施例中承载装置一实施例的结构示意图，该承载装置200可以包括承载主体210以及加热元件220；加热元件220用于对承载主体210进行加热，其中，优选地，加热元件220与承载主体210连接，加热元件220通过接触传热的方式对承载主体210进行加热，譬如加热元件220可以为加热管或者加热丝等。当然，在其他实施例中，加热元件220可以为其他的加热形式，譬如火焰加热等。
在本实施例中，承载主体210的中部设有容置腔，加热元件220设于容置腔内。其中，该承载主体210采用导热性材料制成，优选为金属材料，譬如铜、钢铁等。
请参阅图5，图5是本发明用于准分子激光退火制作低温多晶硅系统中的承载装置另一实施例的结构示意图，与上一实施例不同的是，本实施例中加热元件220设于承载主体210的外侧，具体可以为底部，当然还可以为侧面。只要可以起到对承载主体210加热的目的即可。
请一并参阅图3至图5，承载主体210的上表面还设有导热支撑体230，在利用准分子激光退火法制作低温多晶硅的过程中，导热支撑体230用于支撑玻璃基板310，并将承载主体210的热量传递到玻璃基板310上。
其中，导热支撑体230可以包括多个导热支撑单元231，多个导热支撑单元231以不规则排布的形式设置在承载主体210的上表面。优选地，导热支撑单元231可以为金属pin结构。另外，导热支撑体230（包括多个导热支撑单元231）可以与承载主体210为一体结构，或者每一导热支撑单元231还可以为单独的金属pin（针、或者柱状）结构与承载主体210粘接或者接触连接，只是与承载主体210导热接触连接即可。
请参阅图6，图6是导热支撑体另一实施例的结构示意图，在该实施例中，导热支撑体230除了包括多个导热支撑单元231之外，还可以包括一个连接体232，以将多个导热支撑单元231连接起来。或者说连接体232与多个导热支撑单元231为一体结构。
请继续参阅图4，承载装置200还可以包括隔热层240，该隔热层240设于承载主体210的上表面，且填充于多个导热支撑单元231之间，用于对导热支撑单元231之间的承载主体210上表面与玻璃基板310的空隙进行隔热。如此一来，可以使玻璃基板310的传热区（与导热支撑单元231的接触位置）与非传热区有更好的区分，进而形成低温区和高温区。
请参阅图7，图7是利用本发明实施例承载装置进行重结晶过程中晶粒结晶状态的示意图。根据非晶硅在重结晶过程中的特性，由低温向高温方向结晶，因此本实施例中承载装置200的结构可以使晶体在结晶的过程中具有稳定的结晶方向，使多晶硅材料具有晶粒间晶界少，晶粒大，且多晶硅的载子移动率高的特点。图中标注331表示为晶粒。晶粒上的箭头表示结晶方向。
相对于现有技术，本发明提供的利用准分子激光退火制作低温多晶硅的系统及其承载装置，该承载装置通过设置加热元件以及带有导热支撑体的承载主体结构，可以对承载多晶硅材料的玻璃基板进行局部加热，进而在重结晶过程中可以形成稳定的低温区和高温区，以便获得可控制结晶方向的多晶硅材料，使多晶硅材料具有晶粒间晶界少，晶粒大，且多晶硅的载子移动率高的特点。
以上所述仅为本发明的部分实施例，并非因此限制本发明的保护范围，凡是利用本发明说明书及附图内容所作的等效装置或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (19)

  1. 一种用于准分子激光退火制作低温多晶硅系统中的承载装置，其中，所述承载装置包括承载主体以及加热元件；其中，所述加热元件用于对所述承载主体进行加热，所述承载主体的上表面设有导热支撑体，在利用准分子激光退火法制作低温多晶硅的过程中，所述导热支撑体用于支撑玻璃基板，并将所述承载主体的热量传递到玻璃基板上；所述加热元件与所述承载主体连接，所述加热元件通过接触传热的方式对所述承载主体进行加热；所述导热支撑体包括多个导热支撑单元，所述多个导热支撑单元不规则排布设置在所述承载主体的上表面；所述承载主体采用导热性材料制成。
  2. 一种用于准分子激光退火制作低温多晶硅系统中的承载装置，其中，所述承载装置包括承载主体以及加热元件；其中，所述加热元件用于对所述承载主体进行加热，所述承载主体的上表面设有导热支撑体，在利用准分子激光退火法制作低温多晶硅的过程中，所述导热支撑体用于支撑玻璃基板，并将所述承载主体的热量传递到玻璃基板上。
  3. 根据权利要求2所述的承载装置，其中，所述加热元件与所述承载主体连接，所述加热元件通过接触传热的方式对所述承载主体进行加热。
  4. 根据权利要求3所述的承载装置，其中，承载主体的中部设有容置腔，所述加热元件设于所述容置腔内。
  5. 根据权利要求2所述的承载装置，其中，所述导热支撑体包括多个导热支撑单元，所述多个导热支撑单元不规则排布设置在所述承载主体的上表面。
  6. 根据权利要求2所述的承载装置，其中，所述承载主体采用导热性材料制成。
  7. 根据权利要求6所述的承载装置，其中，所述承载主体为金属材料制成。
  8. 根据权利要求5所述的承载装置，其中，所述导热支撑单元为金属pin结构。
  9. 根据权利要求2所述的承载装置，其中，所述导热支撑体与所述承载主体为一体结构。
  10. 根据权利要求5所述的承载装置，其中，所述承载装置还包括隔热层，所述隔热层设于所述承载主体的上表面，且填充于所述多个导热支撑单元之间，用于对导热支撑单元之间的承载主体上表面与玻璃基板的空隙进行隔热。
  11. 一种利用准分子激光退火的方法制作低温多晶硅的系统，其中，所述系统包括准分子激光发生器以及承载装置，所述准分子激光发生器用于产生准分子激光，以对设于所述承载装置上的非晶硅材料进行加热，所述承载装置通过对承载非晶硅材料的玻璃基板进行加热，使被加热后的非晶硅材料在结晶过程中具有稳定的低温区以及高温区，进而获得可控制结晶方向的多晶硅材料；其中，所述承载装置包括承载主体以及加热元件；所述加热元件用于对所述承载主体进行加热，所述承载主体的上表面设有导热支撑体，在利用准分子激光退火法制作低温多晶硅的过程中，所述导热支撑体用于支撑玻璃基板，并将所述承载主体的热量传递到玻璃基板上。
  12. 根据权利要求11所述的系统，其中，所述加热元件与所述承载主体连接，所述加热元件通过接触传热的方式对所述承载主体进行加热。
  13. 根据权利要求12所述的系统，其中，承载主体的中部设有容置腔，所述加热元件设于所述容置腔内。
  14. 根据权利要求11所述的系统，其中，所述导热支撑体包括多个导热支撑单元，所述多个导热支撑单元不规则排布设置在所述承载主体的上表面。
  15. 根据权利要求11所述的系统，其中，所述承载主体采用导热性材料制成。
  16. 根据权利要求15所述的系统，其中，所述承载主体为金属材料制成。
  17. 根据权利要求14所述的系统，其中，所述导热支撑单元为金属pin结构。
  18. 根据权利要求11所述的系统，其中，所述导热支撑体与所述承载主体为一体结构。
  19. 根据权利要求14所述的系统，其中，所述承载装置还包括隔热层，所述隔热层设于所述承载主体的上表面，且填充于所述多个导热支撑单元之间，用于对导热支撑单元之间的承载主体上表面与玻璃基板的空隙进行隔热。
PCT/CN2017/089703 2017-05-17 2017-06-23 利用准分子激光退火制作低温多晶硅的系统及其承载装置 Ceased WO2018209759A1 (zh)

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