WO2018192221A1 - 一种集成表贴发光器件的生产工艺 - Google Patents

一种集成表贴发光器件的生产工艺 Download PDF

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Publication number
WO2018192221A1
WO2018192221A1 PCT/CN2017/112774 CN2017112774W WO2018192221A1 WO 2018192221 A1 WO2018192221 A1 WO 2018192221A1 CN 2017112774 W CN2017112774 W CN 2017112774W WO 2018192221 A1 WO2018192221 A1 WO 2018192221A1
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light
substrate
led chip
light emitting
production process
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PCT/CN2017/112774
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French (fr)
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朱希婕
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深圳巿梓光智能科技有限公司
毛秀中
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Publication of WO2018192221A1 publication Critical patent/WO2018192221A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages

Definitions

  • the invention relates to the technical field of light-emitting components, in particular to a production process of an integrated surface-mount light-emitting device.
  • the SMD package is to fix the LED chip with the conductive adhesive and insulating glue on the pad of the lamp holder, and then perform the LED chip conduction performance soldering. After the functional test, the ring is used. Oxygen resin is encapsulated and then split, cut and taped.
  • the SMD package has only a single RGB chip in the light-emitting device. Although the single-lamp monolithic package is easy to process, the four-corner or hexagonal bracket used in the package brings technical difficulties and reliability to the subsequent production process. Hidden dangers. When a high-resolution display is required, the density of the light-emitting point increases, and the light-emitting device needs to be processed onto the display circuit board. This SMD package structure has a large number of bracket pin soldering yield problems, and cannot produce high resolution. Display.
  • the present invention proposes a production process of an integrated surface-mount light-emitting device, which fills a blank of a high-definition, high-resolution display screen.
  • the technical solution adopted by the present invention is to design a production process of an integrated surface-mount light-emitting device, comprising the following steps:
  • Step 1 Arranging a plurality of light-emitting point groups on the front surface of the substrate, each light-emitting point group comprising at least one red LED chip, at least one green LED chip, and at least one blue LED chip, all of which are packaged in COB.
  • each light-emitting point group comprising at least one red LED chip, at least one green LED chip, and at least one blue LED chip, all of which are packaged in COB.
  • Step 2 the substrate is cut into a plurality of independent light-emitting devices, and each light-emitting device is provided with a light-emitting point group;
  • Step 3 illuminating the test wavelength and the brightness value of the red LED chip, the green LED chip and the blue LED chip in each of the light-emitting devices, and dividing all the light-emitting devices into BIN according to the test data;
  • Step 4. Test the forward voltage and reverse leakage current of each of the light-emitting devices, and pick out the unqualified ones.
  • each of the light-emitting point groups in step 1 comprises a plurality of red LED chips, a plurality of green LED chips and a plurality of blue LED chips, and the red LED chip, the green LED chip and the blue light in the light-emitting point group.
  • the LED chip row and column pitch can be arbitrarily arranged and combined.
  • all of the LED chips in step 1 are packaged in a COB package or a flip-chip COB package.
  • the front surface of the substrate is provided with a pad for packaging the LED chip, and the back surface of the substrate is provided with a pin pad for soldering the control pin.
  • the substrate is a black double-sided circuit board or a multilayer circuit board, and the material of the substrate is BT, carbon fiber or FR4.
  • the production process further includes: step 5, arranging the qualified light emitting device array on the circuit board of the high resolution display screen, and covering the mask on the circuit board.
  • the substrate before the substrate is cut in the step 2, the substrate is first molded and sealed so that the front surface of the substrate is covered with a transparent gel.
  • the thickness of the gum ranges from 0.8 mm to 1.2 mm.
  • the production process further includes: Step 5, arranging the light-emitting devices that are qualified and located in the same BIN range into the carrier tape, and heat-sealing the protective film on the carrier tape.
  • the invention integrates COB package and SMD package technology, and several red, green and blue primary color LED chips are packaged on the substrate by COB, the spacing between the LED chips can be adjusted as needed, and the LED chip package is completed and then cut into independent light-emitting devices.
  • the light-emitting device is small in size, and a light-emitting device can be packaged with a set of red, green and blue LED chips or a plurality of sets of red, green and blue LED chips.
  • the resolution of the light-emitting device is high, and is suitable for processing high-resolution and high-brightness products.
  • the LED chip of the invention is packaged on the substrate by COB, and the bracket in the traditional SMD package is removed, and the number of LED chips in a single light-emitting device can be increased.
  • the substrate is cut into a single light-emitting device, and then separately The light-emitting device is split and tested to solve the problem that the product pass rate is difficult to control and the yield is low in the conventional COB package.
  • FIG. 1 is a schematic view showing the structure of a whole plate when the substrate is not cut in the present invention
  • FIG. 2 is a schematic view showing the arrangement of front side pads of a single light emitting device region on a substrate in the present invention
  • FIG. 3 is a schematic view showing the arrangement of the back surface pin pads of a single light emitting device region on the substrate in the present invention
  • FIG. 4 is a schematic structural view of an LED chip packaged on a substrate in the present invention.
  • Figure 5 is a schematic view showing the structure of a single light-emitting device without sealing in the present invention.
  • Fig. 6 is a schematic view showing the structure of a single light-emitting device encapsulant in the present invention.
  • the production process of the light-emitting device proposed by the invention includes steps of packaging, cutting, dividing BIN, testing and the like.
  • Step 1 the substrate 1 is pre-designed as needed.
  • the upper and lower sides of the substrate 1 are provided with a process edge 11 , and the process edge 11 is provided with a positioning hole 12 for subsequent processing on the substrate 1 .
  • the substrate 1 is a black double-sided circuit board or a multi-layer circuit board.
  • the material of the substrate 1 is BT, carbon fiber or FR4, and the surface is an immersion gold process, except that the entire printing plate is black-welded, and the double-sided line is blind through the hole. hole.
  • the front surface of the substrate 1 is provided with a plurality of pads 13 for encapsulating the LED chips, and the back surface of the substrate 1 is provided with a plurality of pin pads 14 for soldering control pins.
  • Each light-emitting point group includes at least one red LED chip, at least one green LED chip, and at least one blue LED chip, and all the LED chips.
  • 2 is a single primary color bare chip, and is encapsulated on the substrate 1 by COB.
  • each of the light-emitting point groups in the first step includes a plurality of red LED chips, a plurality of green LED chips, and a plurality of blue light.
  • the LED chip and the three-color LED chips in the light-emitting point group are arranged and combined arbitrarily, and the spacing between the three-color LED chips is adjusted according to actual needs, and the adjacent three-color LED chips in the light-emitting point group are mixed to form a virtual light-emitting point, and pass through several
  • the combination of the light-emitting points forms a micro-matrix light-emitting device 3 having different dot pitches.
  • a plurality of three-color LED chips can be arranged in the light-emitting device 3 processed by the invention, and the spacing of the three-color LED chips can be adjusted at will, and the volume is small and the resolution is high.
  • all the LED chips 2 in step 1 may be in a positive COB package or a flip-chip COB package.
  • the COB is placed on the substrate 1 in the positive COB, and the LED chip and the substrate are electrically connected by wire bonding. Reverse mounting COB will place the bare chip on the substrate 1 and the LED chip 2 will be directly connected to the substrate through the chip electrode.
  • the size of the flip-chip COB can be made smaller, the optical is easier to match, the heat dissipation function, the chip life and the anti-static ability are good. .
  • Step 2 After the light-emitting point group is packaged, as shown in FIG. 5, the substrate 1 is cut into a plurality of independent light-emitting devices 3, and each light-emitting device 3 is provided with a light-emitting point group, and the size of the light-emitting device 3 is 15 ⁇ . Within 15mm, the front surface of the light-emitting device 3 emits light, and the bottom surface is provided with a control pin 31;
  • Step 3 the three color LED chips in each of the light-emitting devices 3 respectively illuminate the test wavelength and the brightness value, and all the light-emitting devices are divided into BIN according to the test data;
  • Step 4 Single-point scanning tests the forward voltage and reverse leakage current of each of the light-emitting devices 3, and picks up the unqualified ones.
  • the production process further includes: step 5, curing the qualified light-emitting device 3 and arranging and mounting on the circuit board, and the process of curing the light-emitting device 3 is the LED chip of the light-emitting device 3. 2 surface dispensing, covering the LED chip 2 to prevent it from being oxidized, covering the circuit board to protect the LED chip 2 on the light-emitting device, the light emitted by the LED chip is emitted through the mask, and the mask covering form is convenient for post-disassembly maintenance, and The light is more uniform and brighter.
  • the imprinted substrate is first molded and sealed, so that the front surface of the substrate 1 is covered with a transparent gel 4, and the gel 4 is passed through the gel 4 .
  • the LED chip 2 is protected, and the light emitted from the LED chip 2 is emitted through the gel 4.
  • the thickness of the gel 4 ranges from 0.8 mm to 1.2 mm.
  • the production process further includes: Step 5, arranging the light-emitting devices 3 that are qualified and located in the same BIN range into the carrier tape, and heat-sealing the protective film on the carrier tape.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
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Abstract

提供一种集成表贴发光器件（3）的生产工艺，包括以下步骤：步骤1、将若干个发光点组排列封装在基板（1）的正面上，每个发光点组包含至少一个红光发光二极管（LED）芯片、至少一个绿光LED芯片和至少一个蓝光LED芯片，所有LED芯片采用板上芯片封装工艺（COB）封装在基板（1）上；步骤2、将基板（1）切割分成若干个独立的发光器件（3），每个发光器件（3）内设有一个发光点组；步骤3、将每个发光器件（3）内的红光LED芯片、绿光LED芯片及蓝光LED芯片分别点亮测试波长和亮度值，按照测试数据将所有发光器件（3）根据分光档次级别（BIN）进行划分；步骤4、测试每个发光器件（3）的正向电压和反向漏电流，将不合格的挑出。该生产工艺简单，生产的发光器件（3）分辨率高。

Description

一种集成表贴发光器件的生产工艺 技术领域
本发明涉及发光元器件技术领域，尤其涉及一种集成表贴发光器件的生产工艺。
背景技术
现有的发光显示器件大部分采用SMD封装，SMD封装是将LED芯片用导电胶和绝缘胶固定在灯珠支架的焊盘上，然后进行LED芯片导通性能焊接，那功能测试后，用环氧树脂胶包封，再进行分光、切割和打编带。
这种SMD封装制成的发光器件内仅有单个RGB芯片，单灯珠单体化分装虽然容易加工，但其封装中使用的四角或六角支架为后续的生产环节带来了技术困难和可靠性隐患。当需要生产高分辨率显示屏时，发光点密度增加，发光器件需要贴片加工到显示屏电路板上，这种SMD封装结构存在数量庞大的支架管脚焊接良率问题，无法生产高分辨率显示屏。
发明内容
为了解决现有技术中存在的上述缺陷，本发明提出一种集成表贴发光器件的生产工艺，填补了高清、高分辨率显示屏的空白。
本发明采用的技术方案是，设计一种集成表贴发光器件的生产工艺，包括以下步骤：
步骤1、将若干个发光点组排列封装在基板的正面上，每个发光点组包含至少一个红光LED芯片、至少一个绿光LED芯片和至少一个蓝光LED芯片，所有LED芯片采用COB封装在基板上；
步骤2、将基板切割分成若干个独立的发光器件，每个发光器件内设有一个发光点组；
步骤3、将每个发光器件内的红光LED芯片、绿光LED芯片及蓝光LED芯片分别点亮测试波长和亮度值，按照测试数据将所有发光器件分BIN；
步骤4、测试每个发光器件的正向电压和反向漏电流，将不合格的挑出。
较优的，步骤1中每个发光点组内包含多个红光LED芯片、多个绿光LED芯片及多个蓝光LED芯片，发光点组内的红光LED芯片、绿光LED芯片及蓝光LED芯片行列间距可任意排列组合。
优选的，步骤1中所有LED芯片采用正装COB封装或倒装COB封装。
优选的，基板正面设有用于封装LED芯片的焊盘，基板的背面设有用于焊接控制引脚的引脚焊盘。
优选的，基板为黑色双面线路板或多层线路板，基板的材料为BT、碳纤维或FR4。
在第一实施例中，生产工艺还包括：步骤5、将合格的发光器件排列安装在高分辨率显示屏的电路板上，在电路板上覆盖面罩。
在第二实施例中，步骤2中切割基板之前，先对基板进行模压封胶，使基板的正面覆盖一层透明的胶质。优选的，胶质的厚度范围为0.8mm至1.2mm。在第二实施例中，生产工艺还包括：步骤5、将合格并位于同一BIN范围的发光器件编入载带，在载带上热封保护膜。
本发明集成了COB封装及SMD封装技术，将若干个红绿蓝基色LED芯片采用COB封装在基板上，LED芯片之间的间距可按照需要调整，LED芯片封装完成后再切割成独立的发光器件，发光器件体积小，且一个发光器件内可封装有一组红绿蓝LED芯片或多组红绿蓝LED芯片，发光器件的分辨率高，适用于加工高分辨率及高亮度产品。
与现有技术相比，本发明的LED芯片采用COB封装在基板上，去除传统SMD封装中的支架，可提高单个发光器件内的LED芯片数量，封装后将基板切割形成单个发光器件，再分别对发光器件进行分光、测试，解决了传统COB封装中产品一次通过率难控制、成品率低的问题。
附图说明
下面结合实施例和附图对本发明进行详细说明，其中：
图1是本发明中基板未切割时的整版结构示意图；
图2是本发明中基板上单个发光器件区域的正面焊盘排布示意图；
图3是本发明中基板上单个发光器件区域的背面引脚焊盘排布示意图；
图4是本发明中LED芯片封装在基板上的结构示意图；
图5是本发明中单个发光器件未封胶的结构示意图；
图6是本发明中单个发光器件封胶的结构示意图。
具体实施方式
本发明提出的发光器件的生产工艺，包括封装、切割、分BIN、测试等步骤。
下面详细阐述每个步骤：
步骤1、如图1所示，基板1按照需要预先进行拼版设计，基板1的上下两侧设有工艺边11，工艺边11上设有定位孔12，便于在基板1上进行后续加工。基板1为黑色双面线路板或多层线路板，基板1的材料为BT、碳纤维或FR4，表面为沉金工艺，除发光区域整版均为黑色组焊，双面线路导通过孔为盲孔。如图2、3所示，基板1正面设有若干个用于封装LED芯片的焊盘13，基板1的背面设有若干个用于焊接控制引脚的引脚焊盘14。
如图4所示，将若干个发光点组排列封装在基板1的正面上，每个发光点组包含至少一个红光LED芯片、至少一个绿光LED芯片和至少一个蓝光LED芯片，所有LED芯片2为单基色裸芯片，且采用COB封装在基板1上。
为了便于描述，本文中提到的三色LED芯片是红光LED芯片、绿光LED芯片及蓝光LED芯片的简称。各发光点组内三色LED芯片的数量和排列可相同或者不相同，较优的，步骤1中每个发光点组内包含多个红光LED芯片、多个绿光LED芯片及多个蓝光LED芯片，发光点组内的三色LED芯片任意排列组合，按照实际需要调整三色LED芯片之间的间距，发光点组内相邻的三色LED芯片颜色混合形成一个虚拟发光点，通过若干发光点的组合形成点间距各异的微型矩阵发光器件3。相比于现有SMD元件来说，采用本发明加工的发光器件3内可排布若干个三色LED芯片，且可随意调整三色LED芯片的间距，体积小、分辨率高。
另外，步骤1中所有LED芯片2可采用正装COB封装或倒装COB封装，正装COB即将裸芯片正置放在基板1上，通过引线键合实现LED芯片与基板的导通。反装COB即将裸芯片倒置放在基板1上，LED芯片2直接通过芯片电极与基板导通，倒装COB尺寸可以做到更小，光学更容易匹配，散热功能、芯片寿命及抗静电能力好。
步骤2、发光点组封装完成后，如图5所示，将基板1切割分成若干个独立的发光器件3，每个发光器件3内设有一个发光点组，发光器件3的尺寸在15×15mm以内，发光器件3正面发光、底面设有控制引脚31；
步骤3、将每个发光器件3内的三色LED芯片分别点亮测试波长和亮度值，按照测试数据将所有发光器件3分BIN；
步骤4、单点扫描测试每个发光器件3的正向电压和反向漏电流，将不合格的挑出。
在第一实施例中，如图5所示，生产工艺还包括：步骤5、将合格的发光器件3固化后排列安装在电路板上，发光器件3固化的过程就是在发光器件3的LED芯片2表面点胶，覆盖LED芯片2防止其被氧化，在电路板上覆盖面罩保护发光器件上的LED芯片2，LED芯片发出的光线穿过面罩射出，面罩覆盖的形式有利于后期拆卸维护，且发光更均匀、更亮。
在第二实施例中，如图6所示，步骤2中切割基板1之前，先对整版基板进行模压封胶，使基板1的正面覆盖一层透明的胶质4，通过该胶质4保护LED芯片2，LED芯片2发出的光线穿过胶质4射出。较优的，胶质4的厚度范围为0.8mm至1.2mm。在第二实施例中，生产工艺还包括：步骤5、将合格并位于同一BIN范围的发光器件3编入载带，在载带上热封保护膜。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。

Claims (9)

  1. 一种集成表贴发光器件的生产工艺，其特征在于，包括以下步骤：
    步骤1、将若干个发光点组排列封装在基板的正面上，每个发光点组包含至少一个红光LED芯片、至少一个绿光LED芯片和至少一个蓝光LED芯片，所有LED芯片采用COB封装在基板上；
    步骤2、将基板切割分成若干个独立的发光器件，每个发光器件内设有一个发光点组；
    步骤3、将每个发光器件内的红光LED芯片、绿光LED芯片及蓝光LED芯片分别点亮测试波长和亮度值，按照测试数据将所有发光器件分BIN；
    步骤4、测试每个发光器件的正向电压和反向漏电流，将不合格的挑出。
  2. 如权利要求1所述的生产工艺，其特征在于，所述步骤1中每个发光点组内包含多个红光LED芯片、多个绿光LED芯片及多个蓝光LED芯片，发光点组内的红光LED芯片、绿光LED芯片及蓝光LED芯片行列间距可任意排列组合。
  3. 如权利要求2所述的生产工艺，其特征在于，还包括：步骤5、将合格的发光器件排列安装在电路板上，在电路板上覆盖面罩。
  4. 如权利要求1或2所述的生产工艺，其特征在于，所述步骤2中切割基板之前，先对基板进行模压封胶，使基板的正面覆盖一层透明的胶质。
  5. 如权利要求3所述的生产工艺，其特征在于，所述胶质的厚度范围为0.8mm至1.2mm。
  6. 如权利要求4所述的生产工艺，其特征在于，还包括：步骤5、将合格并位于同一BIN范围的发光器件编入载带，在载带上热封保护膜。
  7. 如权利要求1至3任一项所述的生产工艺，其特征在于，所述步骤1中所有LED芯片采用正装COB封装或倒装COB封装。
  8. 如权利要求1至3任一项所述的生产工艺，其特征在于，所述基板正面设有用于封装LED芯片的焊盘，所述基板的背面设有用于焊接控制引脚的引脚焊盘。
  9. 如权利要求1至3任一项所述的生产工艺，其特征在于，所述基板为黑色双面线路板或多层线路板，所述基板的材料为BT、碳纤维或FR4。
PCT/CN2017/112774 2017-04-19 2017-11-24 一种集成表贴发光器件的生产工艺 WO2018192221A1 (zh)

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CN108767087A (zh) * 2018-05-17 2018-11-06 山西高科华兴电子科技有限公司 一种用多层复合玻璃陶瓷基板制造led显示模组的方法
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