WO2018180577A1 - Dispositif à semi-conducteur et appareil électronique - Google Patents

Dispositif à semi-conducteur et appareil électronique Download PDF

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WO2018180577A1
WO2018180577A1 PCT/JP2018/010395 JP2018010395W WO2018180577A1 WO 2018180577 A1 WO2018180577 A1 WO 2018180577A1 JP 2018010395 W JP2018010395 W JP 2018010395W WO 2018180577 A1 WO2018180577 A1 WO 2018180577A1
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substrate
light
semiconductor device
light emitting
emitting element
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PCT/JP2018/010395
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English (en)
Japanese (ja)
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章太 北村
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ソニーセミコンダクタソリューションズ株式会社
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/127—Active-matrix OLED [AMOLED] displays comprising two substrates, e.g. display comprising OLED array and TFT driving circuitry on different substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses

Definitions

  • the present technology relates to a semiconductor device and an electronic device, and more particularly, to a semiconductor device and an electronic device that enable further miniaturization in a device including both a light emitting element and a light receiving element.
  • a device having a light receiving element in a display area of a display device and having both an image display function and a light receiving function has been proposed.
  • Patent Document 1 also disclose a structure in which a light emitting element is formed on a substrate on which a light receiving element is formed.
  • the light emitting structure and the light receiving structure are configured on a single substrate, the light emitting element and the light receiving element are different elements, and therefore, the areas must be laid out separately.
  • the driving voltage and the driving timing are different between the light emitting element and the light receiving element, it is necessary to provide an electrical separation layer for suppressing the mutual influence to suppress the influence of noise. Since the separation layer is a value that is physically close to the limit value even at present, further miniaturization has become difficult.
  • Patent Document 3 a structure is proposed in which a substrate on which a light emitting element is formed and a substrate on which a light receiving element is formed are separated and stacked.
  • Patent Document 3 since the electrical connection between the substrates is performed at the edge of the screen edge, wiring from each element in the screen to the screen edge is required, and there is a limit to miniaturization.
  • the present technology has been made in view of such a situation, and enables further miniaturization in an apparatus including both a light emitting element and a light receiving element.
  • a semiconductor device includes a first substrate including a first transistor that drives a light receiving element, and a second substrate including a second transistor that drives a light emitting element.
  • the substrate includes the light emitting element and the light receiving element, and a through electrode that passes through the first substrate and transmits a drive signal of the light emitting element from the second substrate.
  • An electronic apparatus includes a first substrate that includes a first transistor that drives a light receiving element, and a second substrate that includes a second transistor that drives a light emitting element.
  • the substrate includes a semiconductor device having the light emitting element and the light receiving element, and a through electrode that passes through the first substrate and transmits a drive signal of the light emitting element from the second substrate.
  • a first substrate including a first transistor that drives a light receiving element and a second substrate including a second transistor that drives a light emitting element are provided,
  • One substrate is provided with the light emitting element and the light receiving element, and a through electrode that passes through the first substrate and transmits a drive signal of the light emitting element from the second substrate.
  • the semiconductor device and the electronic device may be independent devices, or may be modules incorporated in other devices.
  • FIG. 1 It is a sectional view concerning a 1st embodiment of a semiconductor device to which this art is applied. It is a figure which shows the circuit structure of each of a 1st board
  • FIG. 1 is a cross-sectional view according to a first embodiment of a semiconductor device to which the present technology is applied.
  • the semiconductor device 1 shown in FIG. 1 is a device having two functions of a light emitting function and an imaging function.
  • the light emitting function may be a display function for displaying a predetermined image, or may be a lighting function.
  • the semiconductor device 1 has a structure in which two substrates of a first substrate 21 and a second substrate 51 are stacked.
  • the first substrate 21 and the second substrate 51 are configured by a silicon substrate using, for example, silicon (Si) as a semiconductor.
  • FIG. 1 is a cross-sectional view of a portion of the semiconductor device 1 corresponding to one pixel in the pixel array unit 101 (FIG. 2) in which pixels are two-dimensionally arranged in a matrix in the row direction and the column direction.
  • each pixel includes a G light emitting unit 11G that emits light of G (green) color, an R light emitting unit 11R that emits light of R (red) color, and a B (blue) light.
  • a B light emitting unit 11B that emits light of a color and a light receiving unit 12 that receives light are arranged side by side in the planar direction.
  • positioning of G light emission part 11G, R light emission part 11R, B light emission part 11B, and the light-receiving part 12 is not limited to the example of FIG. 1, It is arbitrary.
  • a wiring layer 24 composed of a plurality of stacked metal wirings 22 and an interlayer insulating film 23 therebetween. Is formed.
  • a wiring layer 54 including a plurality of stacked metal wirings 52 and an interlayer insulating film 53 therebetween is also provided on the surface of the second substrate 51 facing the first substrate 21 (the upper surface in FIG. 1). Is formed.
  • copper (Cu), tungsten (W), aluminum (Al), or the like is used as a material for the metal wiring 22 and the metal wiring 52.
  • the wiring layer 24 of the first substrate 21 and the wiring layer 54 of the second substrate 51 are electrically connected by directly joining metal wirings in a part of the region.
  • the metal wiring 22-1 and the metal wiring 52-1 are electrically connected by Cu—Cu bonding.
  • the metal wiring 22-2 and the metal wiring 52-2, and the metal wiring 22-3 and the metal wiring 52-3 are electrically connected by Cu—Cu bonding.
  • a low voltage transistor Tra driven at a low voltage of about 1.0 to 1.8V and a photo formed in the region of the light receiving portion 12 in the first substrate 21.
  • a PD drive transistor Trb for driving the diode (PD) 25 is formed.
  • the photodiode 25 is a photoelectric conversion unit that converts incident light into an electrical signal (photoelectric conversion).
  • the PD drive transistor Trb is driven at a higher voltage than the low voltage transistor Tra, for example, about 2.0 to 4.0V.
  • the PD drive transistor Trb and the low voltage transistor Tra are CMOS transistors formed by a general CMOS process.
  • a through electrode 26 penetrating the first substrate 21 is formed in each region of the G light emitting unit 11 G, the R light emitting unit 11 R, and the B light emitting unit 11 B.
  • An insulating film 27 for insulating the through electrode 26 and the first substrate 21 is formed.
  • STI (Shallow Trench Isolation) 28 is formed at the boundary between the G light emitting portion 11G, the R light emitting portion 11R, the B light emitting portion 11B, and the light receiving portion 12 in the first substrate 21.
  • a fixed charge film 31 having a negative fixed charge for suppressing the generation of dark current.
  • the insulating films 32 and 33 are laminated.
  • a light emitting layer 40 formed by laminating a lower electrode 41, an organic EL film (light emitting element) 42, and an upper electrode 43 is disposed on the upper side of the insulating films 32 and 33.
  • the lower electrode 41 is made of a metal material
  • the upper electrode 43 is a transparent electrode that transmits light.
  • the lower electrode 41 is, for example, an anode electrode
  • the upper electrode 43 is a cathode electrode. The polarities of the lower electrode 41 and the upper electrode 43 may be reversed.
  • the organic EL film 42 as the intermediate layer can be a combination of various organic films.
  • Hole injection layer HIL: Hole Injection Layer
  • hole transport layer HTL: Hole Transport Layer
  • organic light emitting layer EML: Emission Transport Layer
  • electron transport layer ETL: Electron Transport Layer
  • EIL Electron Injection Layer
  • organic materials used include phthalocyanines, organic ions (Metal organometallic complexes), triphenylamines (Triarylamines), metal hydroxyquinolates (Metal 8-hydroxyquionlates), fullerenes, etc. Is mentioned.
  • the lower electrode 41 is formed separately for each of the G light emitting part 11G, the R light emitting part 11R, and the B light emitting part 11B, and is a lower electrode 41G, a lower electrode 41R, and a lower electrode 41B, respectively.
  • light emission is controlled for each of the G light emitting unit 11G, the R light emitting unit 11R, and the B light emitting unit 11B based on the drive signal transmitted from the second substrate 51 through the through electrode 26.
  • a G color filter 45G is formed on the upper side of the light emitting layer 40 (upper electrode 43) of the G light emitting portion 11G via a planarizing film 44.
  • the G light emitting portion 11G emits light in G color.
  • an R color filter 45R is formed above the R light emitting unit 11R
  • a B color filter 45B is formed above the B light emitting unit 11B.
  • the R light emitting unit 11R emits light of R color and emits B light.
  • the unit 11B emits light in the B color.
  • a protective film 46 is formed on the planarization film 44 and the upper surfaces of the color filters 45G, 45R, and 45B.
  • incident light is collected on the photodiode 25 on the same plane as the surface on which the light emitting layer 40 is formed and above the photodiode 25 formed in the first substrate 21.
  • An on-chip lens 47 that emits light is disposed.
  • the upper surface of the on-chip lens 47 is covered with a planarizing film 44, and a light shielding wall 48 is formed around the side.
  • a light shielding wall 49 is also provided on the outer periphery of the photodiode 25 in the first substrate 21.
  • the light shielding walls 48 and 49 block light so as not to be affected by light from the outside.
  • a low voltage transistor Trc driven at a low voltage of about 1.0 to 1.8V and a light emission driving transistor Trd for driving the light emitting layer 40 are formed.
  • the light emission drive transistor Trd and the low voltage transistor Trc are CMOS transistors formed by a general CMOS process.
  • the light emission drive transistor Trd is formed for each of the light emitting units 11 of the G light emitting unit 11G, the R light emitting unit 11R, and the B light emitting unit 11B, and is driven at a higher voltage than the low voltage transistor Trc, for example, about 10V.
  • the light emission drive transistor Trd is formed in units of R, G, B of each pixel, but only one is arranged in units of R, G, B of adjacent pixels. It is also possible to adopt a form in which the light emission drive transistor Trd drives the light emitting units 11 of the same color of a plurality of pixels.
  • An STI 55 is formed at the boundary between the G light emitting unit 11G, the R light emitting unit 11R, the B light emitting unit 11B, and the light receiving unit 12.
  • the semiconductor device 1 configured as described above drives the first substrate 21 including the PD drive transistor Trb (first transistor) that drives the photodiode 25 (light receiving element) and the organic EL film 42 (light emitting element). And a second substrate 51 including a light emission drive transistor Trd (second transistor).
  • the first substrate 21 passes through the photodiode 25 and the light emitting layer 40 and the first substrate 21 and transmits a drive signal for driving the organic EL film 42 from the light emission drive transistor Trd of the second substrate 51.
  • a through electrode 26 is provided.
  • the photodiode 25 is a back-illuminated light receiving element that receives light incident from the surface opposite to the surface on which the wiring layer 24 of the first substrate 21 is formed.
  • FIG. 2 shows a circuit configuration formed on each of the first substrate 21 and the second substrate 51 of the semiconductor device 1.
  • the first substrate 21 is provided with a pixel array unit 101, a constant current circuit 102, an ADC circuit 103, a row drive circuit 104, a logic circuit 105, an IF circuit 106, a power supply circuit 107, and an I / O circuit 108. ing.
  • the pixels 100 are periodically arranged in a matrix in the row direction and the column direction.
  • One pixel 100 includes, for example, a through electrode 26 formed in each region of the G light emitting unit 11G, R light emitting unit 11R, and B light emitting unit 11B, a photodiode 25 formed in the region of the light receiving unit 12, and PD driving. Includes transistor Trb.
  • the constant current circuit 102 has one load transistor (MOS transistor) corresponding to each pixel column of the pixel array unit 101, and constitutes a transistor and a source follower circuit in the pixel circuit.
  • MOS transistor load transistor
  • the ADC circuit 103 has one ADC (Analog-Digital Converter) corresponding to each pixel column of the pixel array unit 101, and converts a pixel signal output from the pixels in the same column into a CDS (Correlated Double Double Sampling). Sampling) processing and AD conversion processing.
  • ADC Analog-Digital Converter
  • the row driving circuit 104 drives the low voltage transistor Tra and the PD driving transistor Trb of each pixel 100 of the pixel array unit 101, and receives a light receiving period (exposure period) at the photodiode 25 and outputs a pixel signal to the ADC circuit 103. To control.
  • the logic circuit 105 and the IF circuit 106 perform signal conversion processing of input signals input from the outside, signal conversion processing of pixel signals generated by the pixel array unit 101, arithmetic processing, and the like.
  • the power supply circuit 107 converts the power supplied via the I / O circuit 108 into a predetermined power supply voltage and supplies it to each part of the first substrate 21 and the second substrate 51.
  • the I / O circuit 108 performs input / output of signals with the outside.
  • the second substrate 51 is provided with a pixel array unit 121, a vertical drive circuit 122, a horizontal drive circuit 123, logic circuits 124 and 125, an IF circuit 126, and an I / O circuit 127.
  • each region of the G light emitting unit 11G, the R light emitting unit 11R, and the B light emitting unit 11B is provided for each pixel 100 so as to correspond to the pixel 100 of the pixel array unit 101 of the first substrate 21.
  • a light emission driving transistor Trd and a low voltage transistor Trc for outputting a driving signal for driving the organic EL film 42 formed in the above are disposed.
  • the drive signal output from the light emission drive transistor Trd is transmitted in the order of the wiring layer 54 of the second substrate 51, the wiring layer 24 of the first substrate 21, and the through electrode 26, and is supplied to the lower electrode 41 of the light emitting layer 40.
  • the vertical drive circuit 122 controls the drive timing of each pixel 100 in the vertical direction
  • the horizontal drive circuit 123 controls the drive timing of each pixel 100 in the horizontal direction.
  • the vertical drive circuit 122 drives the low voltage transistor Trc, the light emission drive transistor Trd, and the like of each pixel 100, and controls the light emission periods of the G light emission unit 11G, the R light emission unit 11R, and the B light emission unit 11B of each pixel 100. .
  • the logic circuits 124 and 125 and the IF circuit 126 perform a signal conversion process from an input signal input from the outside to a drive signal, a predetermined calculation process, and the like.
  • the I / O circuit 127 performs input / output of signals with the outside.
  • control circuit that controls the imaging function is disposed on the first substrate 21, and the control circuit that controls the light emitting function is disposed on the second substrate 51.
  • the imaging function and the light emitting function are driven with different operation timings and operating voltages.
  • the PD drive transistor Trb that drives the photodiode 25 is driven with a drive voltage of about 2.0 to 4.0 V, for example, and the light emission drive transistor Trd that drives the organic EL film 42 has a drive voltage of about 10 V, for example. Driven.
  • the semiconductor device 1 is arranged separately on different substrates of the first substrate 21 and the second substrate 51, A robust structure can be realized without mutual interference.
  • a control circuit for controlling the imaging function is arranged on the first substrate 21 to control the light emitting function.
  • the control circuit is arranged on the second substrate 51, and the driving signal for driving the organic EL film 42 is directly transmitted from the lower side to the upper side of the organic EL film 42 by using the through electrode 26, whereby the driving signal is transmitted.
  • the wiring space for transmission can be omitted, thereby reducing the area of the entire chip. That is, further miniaturization can be realized.
  • the process until the wiring layer is formed is performed independently on each of the first substrate 21 and the second substrate 51.
  • the STI 28, the low voltage transistor Tra, the PD driving transistor Trb, the photodiode (PD) 25, and the like are formed on one interface with respect to the first substrate 21. Thereafter, a wiring layer 24 including a plurality of metal wirings 22 and an interlayer insulating film 23 therebetween is formed. In the uppermost layer of the wiring layer 24, the necessary number and positions of the metal wirings 22 for electrical connection with the metal wirings 52 of the second substrate 51 are formed.
  • the metal wiring 22 is formed using, for example, copper (Cu), aluminum (Al), tungsten (W) or the like, and the interlayer insulating film 23 is formed of, for example, a silicon oxide film, a silicon nitride film, or the like.
  • the plurality of metal wirings 22 and the interlayer insulating film 23 may be formed of the same material in all layers, or two or more materials may be used depending on the layer.
  • the first substrate 21 shown in FIG. 3 is in a state before the first substrate 21 is thinned, and has a thickness of about 700 ⁇ m, for example.
  • the second substrate 51 includes a plurality of metal wirings 52 and an interlayer insulating film 53 therebetween.
  • a wiring layer 54 is formed. In the uppermost layer of the wiring layer 54, the necessary number and positions of the metal wirings 52 for electrical connection with the metal wirings 22 of the first substrate 21 are formed.
  • the metal wiring 52 is formed using, for example, copper (Cu), aluminum (Al), tungsten (W) or the like, and the interlayer insulating film 53 is formed of, for example, a silicon oxide film, a silicon nitride film, or the like.
  • the plurality of metal wirings 52 and the interlayer insulating film 53 may be formed of the same material in all layers, or two or more materials may be used depending on the layer.
  • the first substrate 21 and the second substrate 51 manufactured separately are inverted so that the wiring layers face each other. It is pasted together.
  • the surface of the wiring layer to be bonded is subjected to surface treatment, and alignment is performed so that the bonding position does not shift.
  • the metal wiring 22-1 and the metal wiring 52-1, the metal wiring 22-2 and the metal wiring 52-2, and the metal wiring 22-3 and the metal wiring 52-3 are arranged in the most
  • the metal wirings 22 and 52 formed in the upper layer are electrically connected by metal bonding such as Cu-Cu bonding.
  • FIG. 5 after the first substrate 21 on which the photodiodes 25 and the like are formed is thinned to such an extent that the device characteristics are not affected, for example, about 2 to 10 ⁇ m, FIG. As shown in FIG. 2, a fixed charge film 31 for suppressing the generation of dark current and an insulating film 32 are formed on the surface of the first substrate 21 by, for example, a plasma CVD method.
  • the through electrode 26 that penetrates the first substrate 21 and the insulation outside the through electrode 26 A film 27 is formed.
  • the through electrode 26 and the insulating film 27 are formed by first patterning a resist so that a position where the through electrode 26 is formed is opened, and then forming a through hole in the first substrate 21 by dry etching.
  • the through hole is formed so as to reach the first metal wiring 22 of the wiring layer 24.
  • the insulating film 27 is formed in the formed through-hole using a plasma CVD method and the portion of the insulating film 27 connected to the first metal wiring 22 of the wiring layer 24 is removed using an etch-back method.
  • the through electrode 26 is formed by embedding copper in the through hole.
  • a method of embedding copper in the through hole for example, the following method can be adopted. First, a barrier metal film and a Cu seed layer for electroplating are formed using a sputtering method, and the Cu seed layer is reinforced by an electroless plating method or the like as necessary. Thereafter, after the copper is filled by the electrolytic plating method, excess copper is removed by the CMP method, whereby the through electrode 26 is formed.
  • a light shielding wall 49 is formed on the outer periphery of the photodiode 25.
  • a metal material such as copper (Cu), tungsten (W), aluminum (Al), etc., similar to the through electrode 26 can be used.
  • the material of the light shielding wall 49 the fixed charge film 31, the insulating film 32, and other oxide films may be embedded. Further, similarly to the through electrode 26, the inner metal material and the outer insulating film may be used.
  • the light shielding wall 49 may employ a structure in which a plurality of insulating films or a plurality of metal films are stacked in the depth direction, or a structure in which an insulating film and a metal film are stacked in the depth direction.
  • the through electrode 26 and the light shielding wall 49 are formed in separate steps, but may be formed simultaneously in the same step.
  • the G light emitting unit 11G, the R light emitting unit 11R, and the B light emitting unit 11B are formed.
  • the lower electrodes 41G, 41R, and 41B are formed by etching so as to leave only the corresponding portion of the metal film.
  • the organic EL film 42 and the upper electrode 43 are laminated and formed.
  • the upper electrode 43 is made of a transparent conductive material such as indium tin oxide (ITO), zinc oxide, or indium zinc oxide.
  • ITO indium tin oxide
  • zinc oxide zinc oxide
  • indium zinc oxide instead of the organic EL film 42, an inorganic film may be used.
  • the organic EL film 42 and the upper electrode 43 on the upper surface of the photodiode 25 are removed and opened, and an on-chip lens 47 and a light shielding wall 48 are formed there.
  • the material of the on-chip lens 47 for example, a silicon nitride film (SiN) or a resin material such as a styrene resin, an acrylic resin, a styrene-acrylic copolymer resin, or a siloxane resin is used.
  • a black resin (black organic film) or the like can be used in addition to a metal material such as tungsten or aluminum.
  • each region of the G light emitting unit 11G, the R light emitting unit 11R, and the B light emitting unit 11B is applied. Further, color filters 45G, 45R, and 45B are formed. As in the present embodiment, the color filter 45 may arrange the three primary colors R, G, and B in a predetermined arrangement (for example, a Bayer arrangement), cyan (C), magenta (M), yellow ( A complementary color of Y) or white (a filter that transmits light in the entire wavelength band) may be disposed.
  • a predetermined arrangement for example, a Bayer arrangement
  • C cyan
  • M magenta
  • yellow A complementary color of Y
  • white a filter that transmits light in the entire wavelength band
  • the protective film 46 may be omitted.
  • FIG. 14 is a cross-sectional view showing a first modification of the first embodiment.
  • a light shielding wall 201 is newly added to block light from adjacent sides and prevent mutual interference.
  • a black resin (black organic film) or the like can be used in addition to a metal material such as tungsten or aluminum, similarly to the light shielding wall 48 formed around the on-chip lens 47.
  • the light emission efficiency of the light emitting layer 40 can be increased by further providing a light shielding wall 201 at the boundary between the G light emitting unit 11G, the R light emitting unit 11R, and the B light emitting unit 11B.
  • FIG. 15 is a cross-sectional view showing a second modification of the first embodiment.
  • a filter 211 that passes only light of a predetermined wavelength such as infrared light (IR), R, G, B, etc. is formed on the upper surface of the flat film 44 above the on-chip lens 47.
  • the filter 211 may be configured by an interference film or a diffraction grating structure. By providing the filter 211 that allows only light of a predetermined wavelength to pass above the on-chip lens 47, the photodiode 25 can receive only desired light.
  • the filter 211 may be disposed on all the pixels in the pixel array unit 101 or may be disposed on only some of the pixels.
  • FIG. 16 is a cross-sectional view according to a second embodiment of a semiconductor device to which the present technology is applied.
  • Organic EL films 241G, 241R, and 241B are provided.
  • the organic EL films 241G, 241R, and 241B are separately formed in the same region as the lower electrode 41G, the lower electrode 41R, and the lower electrode 41B. Between the organic EL films 241G, 241R, and 241B and between the lower electrode 41G, the lower electrode 41R, and the lower electrode 41B are filled with an insulating film 242.
  • the light-emitting film of the light-emitting layer 40 is changed from a film that emits white light (single color) to a film that emits light of R, G, and B colors, so that the color filter 45G, 45R and 45B are omitted.
  • FIG. 17 is a cross-sectional view according to a third embodiment of a semiconductor device to which the present technology is applied.
  • two photodiodes 25 ⁇ are formed in the first substrate 21 of the light receiving unit 12 in the depth direction. 1 and 25-2 are formed.
  • the upper photodiode 25-1 near the on-chip lens 47 is a photoelectric conversion unit that receives B light
  • the upper photodiode 25-2 is a photoelectric conversion unit that receives R light.
  • the photoelectric conversion film 262 is a film that photoelectrically converts green light, and is formed of an organic photoelectric conversion material containing, for example, a rhodamine dye, a melocyanine dye, or quinacridone.
  • the photoelectric conversion film 262 and the lower electrode 261 and the upper electrode 263 sandwiching the photoelectric conversion film 262 between the upper and lower sides are photoelectric conversion units that photoelectrically convert green light.
  • the lower electrode 261 and the upper electrode 263 are formed of a transparent electrode film such as an indium tin oxide (ITO) film or an indium zinc oxide film.
  • ITO indium tin oxide
  • the insulating film 264 is provided to insulate the upper electrode 263 from the lower electrode 41 of the light emitting layer 40.
  • the light receiving unit 12 receives light of all wavelengths of visible light, whereas in the third embodiment, the light receiving unit 12 is green. Light is photoelectrically converted by the photoelectric conversion film 262 formed outside the first substrate 21, and blue and red light is photoelectrically converted by the photodiodes 25-1 and 25-2 in the first substrate 21. .
  • wavelength (color) light is received by which layer is not limited to this example, and can be arbitrarily determined.
  • FIG. 18 is a cross-sectional view according to a fourth embodiment of a semiconductor device to which the present technology is applied.
  • the glass substrate 281 on which the color filters 45G, 45R, and 45B are formed is disposed above the planarizing film 44.
  • the glass substrate 281 on which the color filters 45G, 45R, and 45B are formed may be arranged with a predetermined gap as shown in FIG. 18, or may be in close contact with the planarization film 44.
  • the semiconductor device 1 can employ a three-layer structure using the glass substrate 281 in addition to the two-layer structure of the first substrate 21 and the second substrate 51.
  • FIG. 19 is a cross-sectional view according to a fifth embodiment of a semiconductor device to which the present technology is applied.
  • the on-chip lens 47 is formed on the upper surface of the protective film 46 instead of the upper surface of the insulating film 32 above the photodiode 25.
  • an organic film is used as the protective film 46.
  • the formation position of the on-chip lens 47 can be arranged at a predetermined position above the photodiode 25 according to the optical design.
  • an on-chip lens 47 may be formed on the upper surface of the insulating film 33.
  • 20 is an example in which the arrangement of the on-chip lens 47 is changed with respect to the first embodiment of FIG. 1.
  • the on-chip lens 47 is arranged on the upper surface of the insulating film 33.
  • the light shielding wall 49 is also formed in the depth direction from the insulating film 33.
  • the semiconductor device 1 has two functions of a light emitting function and an imaging function, and the first substrate 21 on which a control circuit for controlling the imaging function (light receiving function) is formed. And a laminated structure of the second substrate 51 on which a control circuit for controlling the light emitting function is formed.
  • the light emitting operation of the organic EL film 42 and the light receiving operation of the photodiode 25 are executed at different timings, and the operating voltages are also different.
  • the control circuit for the light emitting operation and the control circuit for the light receiving operation are arranged separately on different substrates of the first substrate 21 and the second substrate 51, so that the semiconductor device 1 is robust against mutual interference. Can be realized.
  • the photodiode 25 and the organic EL film 42 are arranged on the first substrate 21 in the planar direction, and the drive signal of the organic EL film 42 is directly transmitted from the lower side to the upper side of the organic EL film 42 using the through electrode 26.
  • the wiring space for transmitting the drive signal can be omitted, and the area of the entire chip can be reduced. That is, further miniaturization can be realized.
  • the semiconductor device 1 described above includes, for example, a display device such as a head-mounted display and a head-up display, an imaging device such as a digital still camera and a digital video camera, a mobile phone having an imaging function, or an audio player having an imaging function. It can be applied to various electronic devices.
  • FIG. 21 is a block diagram illustrating a configuration example of an imaging apparatus as an electronic apparatus to which the present technology is applied.
  • An imaging device 301 shown in FIG. 21 includes an optical system 302, a shutter device 303, a semiconductor device 304, a control circuit 305, a signal processing circuit 306, a monitor 307, and a memory 308, and captures still images and moving images. Is possible.
  • the optical system 302 includes one or a plurality of lenses, guides light (incident light) from the subject to the semiconductor device 304 and forms an image on the light receiving surface of the semiconductor device 304.
  • the shutter device 303 is disposed between the optical system 302 and the semiconductor device 304, and controls the light irradiation period and the light shielding period to the semiconductor device 304 according to the control of the control circuit 305.
  • the semiconductor device 304 is configured by the semiconductor device 1 described above.
  • the semiconductor device 304 accumulates signal charges for a certain period according to the light imaged on the light receiving surface via the optical system 302 and the shutter device 303.
  • the signal charge accumulated in the semiconductor device 304 is transferred according to a drive signal (timing signal) supplied from the control circuit 305.
  • the semiconductor device 304 emits light at a predetermined timing in accordance with a drive signal (timing signal) supplied from the control circuit 305.
  • the light emission of the semiconductor device 304 may be used as an illumination function or a display function.
  • the semiconductor device 304 may be configured as a single chip as a single unit, or may be configured as a part of a camera module packaged together with the optical system 302 or the signal processing circuit 306.
  • the control circuit 305 outputs drive signals for controlling the transfer operation of the semiconductor device 304 and the shutter operation of the shutter device 303 to drive the semiconductor device 304 and the shutter device 303.
  • the signal processing circuit 306 performs various signal processing on the pixel signal output from the semiconductor device 304.
  • An image (image data) obtained by the signal processing by the signal processing circuit 306 is supplied to the monitor 307 and displayed, or supplied to the memory 308 and stored (recorded).
  • the imaging device 301 such as a video camera, a digital still camera, or a camera module for mobile devices such as a mobile phone can also be provided with a light emitting function and an imaging function, and downsizing of the device can be realized.
  • FIG. 22 is a diagram illustrating a usage example when the above-described semiconductor device 1 is used as an image sensor.
  • the image sensor using the semiconductor device 1 described above can be used in various cases for sensing light such as visible light, infrared light, ultraviolet light, and X-ray as follows.
  • Devices for taking images for viewing such as digital cameras and mobile devices with camera functions
  • Devices used for traffic such as in-vehicle sensors that capture the back, surroundings, and interiors of vehicles, surveillance cameras that monitor traveling vehicles and roads, and ranging sensors that measure distances between vehicles, etc.
  • Equipment used for home appliances such as TVs, refrigerators, air conditioners, etc. to take pictures and operate the equipment according to the gestures ⁇ Endoscopes, equipment that performs blood vessel photography by receiving infrared light, etc.
  • Equipment used for medical and health care ⁇ Security equipment such as security surveillance cameras and personal authentication cameras ⁇ Skin measuring instrument for photographing skin and scalp photography Such as a microscope to do beauty Equipment used for sports-Equipment used for sports such as action cameras and wearable cameras for sports applications-Used for agriculture such as cameras for monitoring the condition of fields and crops apparatus
  • the technology according to the present disclosure can be applied to various products.
  • the technology according to the present disclosure may be applied to an in-vivo information acquisition system for a patient using a capsule endoscope.
  • FIG. 23 is a block diagram illustrating an example of a schematic configuration of a patient in-vivo information acquisition system using a capsule endoscope to which the technique according to the present disclosure (present technique) can be applied.
  • the in-vivo information acquisition system 10001 includes a capsule endoscope 10100 and an external control device 10200.
  • the capsule endoscope 10100 is swallowed by the patient at the time of examination.
  • the capsule endoscope 10100 has an imaging function and a wireless communication function, and moves inside the organ such as the stomach and the intestine by peristaltic motion or the like until it is spontaneously discharged from the patient.
  • Images (hereinafter also referred to as in-vivo images) are sequentially captured at predetermined intervals, and information about the in-vivo images is sequentially wirelessly transmitted to the external control device 10200 outside the body.
  • the external control device 10200 comprehensively controls the operation of the in-vivo information acquisition system 10001. Further, the external control device 10200 receives information about the in-vivo image transmitted from the capsule endoscope 10100 and, based on the received information about the in-vivo image, displays the in-vivo image on the display device (not shown). The image data for displaying is generated.
  • an in-vivo image obtained by imaging the inside of the patient's body can be obtained at any time in this manner until the capsule endoscope 10100 is swallowed and discharged.
  • the capsule endoscope 10100 includes a capsule-type casing 10101.
  • a light source unit 10111 In the casing 10101, a light source unit 10111, an imaging unit 10112, an image processing unit 10113, a wireless communication unit 10114, a power supply unit 10115, and a power supply unit 10116 and the control unit 10117 are stored.
  • the light source unit 10111 is composed of a light source such as an LED (Light Emitting Diode), for example, and irradiates the imaging field of the imaging unit 10112 with light.
  • a light source such as an LED (Light Emitting Diode), for example, and irradiates the imaging field of the imaging unit 10112 with light.
  • the image capturing unit 10112 includes an image sensor and an optical system including a plurality of lenses provided in front of the image sensor. Reflected light (hereinafter referred to as observation light) of light irradiated on the body tissue to be observed is collected by the optical system and enters the image sensor. In the imaging unit 10112, in the imaging element, the observation light incident thereon is photoelectrically converted, and an image signal corresponding to the observation light is generated. The image signal generated by the imaging unit 10112 is provided to the image processing unit 10113.
  • the image processing unit 10113 is configured by a processor such as a CPU (Central Processing Unit) or a GPU (Graphics Processing Unit), and performs various signal processing on the image signal generated by the imaging unit 10112.
  • the image processing unit 10113 provides the radio communication unit 10114 with the image signal subjected to signal processing as RAW data.
  • the wireless communication unit 10114 performs predetermined processing such as modulation processing on the image signal that has been subjected to signal processing by the image processing unit 10113, and transmits the image signal to the external control apparatus 10200 via the antenna 10114A.
  • the wireless communication unit 10114 receives a control signal related to drive control of the capsule endoscope 10100 from the external control device 10200 via the antenna 10114A.
  • the wireless communication unit 10114 provides a control signal received from the external control device 10200 to the control unit 10117.
  • the power feeding unit 10115 includes a power receiving antenna coil, a power regeneration circuit that regenerates power from a current generated in the antenna coil, a booster circuit, and the like. In the power feeding unit 10115, electric power is generated using a so-called non-contact charging principle.
  • the power supply unit 10116 is composed of a secondary battery, and stores the electric power generated by the power supply unit 10115.
  • FIG. 23 in order to avoid complication of the drawing, illustration of an arrow or the like indicating a power supply destination from the power supply unit 10116 is omitted, but the power stored in the power supply unit 10116 is stored in the light source unit 10111.
  • the imaging unit 10112, the image processing unit 10113, the wireless communication unit 10114, and the control unit 10117 can be used for driving them.
  • the control unit 10117 includes a processor such as a CPU, and a control signal transmitted from the external control device 10200 to drive the light source unit 10111, the imaging unit 10112, the image processing unit 10113, the wireless communication unit 10114, and the power feeding unit 10115. Control accordingly.
  • a processor such as a CPU
  • the external control device 10200 is configured by a processor such as a CPU or GPU, or a microcomputer or a control board in which a processor and a storage element such as a memory are mounted.
  • the external control device 10200 controls the operation of the capsule endoscope 10100 by transmitting a control signal to the control unit 10117 of the capsule endoscope 10100 via the antenna 10200A.
  • the capsule endoscope 10100 for example, the light irradiation condition for the observation target in the light source unit 10111 can be changed by a control signal from the external control device 10200.
  • an imaging condition for example, a frame rate or an exposure value in the imaging unit 10112
  • a control signal from the external control device 10200 can be changed by a control signal from the external control device 10200.
  • the contents of processing in the image processing unit 10113 and the conditions (for example, the transmission interval, the number of transmission images, etc.) by which the wireless communication unit 10114 transmits an image signal may be changed by a control signal from the external control device 10200. .
  • the external control device 10200 performs various image processing on the image signal transmitted from the capsule endoscope 10100, and generates image data for displaying the captured in-vivo image on the display device.
  • image processing for example, development processing (demosaic processing), high image quality processing (band enhancement processing, super-resolution processing, NR (Noise reduction) processing and / or camera shake correction processing, etc.), and / or enlargement processing ( Various signal processing such as electronic zoom processing can be performed.
  • the external control device 10200 controls driving of the display device to display an in-vivo image captured based on the generated image data.
  • the external control device 10200 may cause the generated image data to be recorded on a recording device (not shown) or may be printed out on a printing device (not shown).
  • the technology according to the present disclosure can be applied to the imaging unit 10112 among the configurations described above.
  • the semiconductor device 1 according to each of the above-described embodiments can be applied as the imaging unit 10112.
  • the capsule endoscope 10100 can be further downsized, and thus the burden on the patient can be further reduced.
  • the size of the capsule endoscope 10100 can be reduced, and a clearer surgical part image can be obtained. Therefore, the accuracy of the examination is improved.
  • the technology according to the present disclosure can be applied to various products.
  • the technology according to the present disclosure may be applied to an endoscopic surgery system.
  • FIG. 24 is a diagram illustrating an example of a schematic configuration of an endoscopic surgery system to which the technology (present technology) according to the present disclosure can be applied.
  • FIG. 24 shows a state in which an operator (doctor) 11131 is performing an operation on a patient 11132 on a patient bed 11133 using an endoscopic operation system 11000.
  • an endoscopic surgery system 11000 includes an endoscope 11100, other surgical instruments 11110 such as an insufflation tube 11111 and an energy treatment instrument 11112, and a support arm device 11120 that supports the endoscope 11100. And a cart 11200 on which various devices for endoscopic surgery are mounted.
  • the endoscope 11100 includes a lens barrel 11101 in which a region having a predetermined length from the distal end is inserted into the body cavity of the patient 11132, and a camera head 11102 connected to the proximal end of the lens barrel 11101.
  • a lens barrel 11101 in which a region having a predetermined length from the distal end is inserted into the body cavity of the patient 11132, and a camera head 11102 connected to the proximal end of the lens barrel 11101.
  • an endoscope 11100 configured as a so-called rigid mirror having a rigid lens barrel 11101 is illustrated, but the endoscope 11100 may be configured as a so-called flexible mirror having a flexible lens barrel. Good.
  • An opening into which the objective lens is fitted is provided at the tip of the lens barrel 11101.
  • a light source device 11203 is connected to the endoscope 11100, and light generated by the light source device 11203 is guided to the tip of the lens barrel by a light guide extending inside the lens barrel 11101. Irradiation is performed toward the observation target in the body cavity of the patient 11132 through the lens.
  • the endoscope 11100 may be a direct endoscope, a perspective mirror, or a side endoscope.
  • An optical system and an image sensor are provided inside the camera head 11102, and reflected light (observation light) from the observation target is condensed on the image sensor by the optical system. Observation light is photoelectrically converted by the imaging element, and an electrical signal corresponding to the observation light, that is, an image signal corresponding to the observation image is generated.
  • the image signal is transmitted to a camera control unit (CCU: Camera Control Unit) 11201 as RAW data.
  • CCU Camera Control Unit
  • the CCU 11201 is configured by a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), and the like, and comprehensively controls operations of the endoscope 11100 and the display device 11202. Further, the CCU 11201 receives an image signal from the camera head 11102 and performs various kinds of image processing for displaying an image based on the image signal, such as development processing (demosaic processing), for example.
  • a CPU Central Processing Unit
  • GPU Graphics Processing Unit
  • the display device 11202 displays an image based on an image signal subjected to image processing by the CCU 11201 under the control of the CCU 11201.
  • the light source device 11203 is composed of a light source such as an LED (Light Emitting Diode), for example, and supplies irradiation light to the endoscope 11100 when photographing a surgical site or the like.
  • a light source such as an LED (Light Emitting Diode), for example, and supplies irradiation light to the endoscope 11100 when photographing a surgical site or the like.
  • the input device 11204 is an input interface for the endoscopic surgery system 11000.
  • a user can input various information and instructions to the endoscopic surgery system 11000 via the input device 11204.
  • the user inputs an instruction to change the imaging conditions (type of irradiation light, magnification, focal length, etc.) by the endoscope 11100.
  • the treatment instrument control device 11205 controls the drive of the energy treatment instrument 11112 for tissue ablation, incision, blood vessel sealing, or the like.
  • the pneumoperitoneum device 11206 passes gas into the body cavity via the pneumoperitoneum tube 11111.
  • the recorder 11207 is an apparatus capable of recording various types of information related to surgery.
  • the printer 11208 is a device that can print various types of information related to surgery in various formats such as text, images, or graphs.
  • the light source device 11203 that supplies the irradiation light when the surgical site is imaged to the endoscope 11100 can be configured by, for example, a white light source configured by an LED, a laser light source, or a combination thereof.
  • a white light source is configured by a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high accuracy. Therefore, the light source device 11203 adjusts the white balance of the captured image. It can be carried out.
  • the driving of the light source device 11203 may be controlled so as to change the intensity of the output light every predetermined time. Synchronously with the timing of changing the intensity of the light, the drive of the image sensor of the camera head 11102 is controlled to acquire an image in a time-sharing manner, and the image is synthesized, so that high dynamic without so-called blackout and overexposure A range image can be generated.
  • the light source device 11203 may be configured to be able to supply light of a predetermined wavelength band corresponding to special light observation.
  • special light observation for example, by utilizing the wavelength dependence of light absorption in body tissue, the surface of the mucous membrane is irradiated by irradiating light in a narrow band compared to irradiation light (ie, white light) during normal observation.
  • a so-called narrow band imaging is performed in which a predetermined tissue such as a blood vessel is imaged with high contrast.
  • fluorescence observation may be performed in which an image is obtained by fluorescence generated by irradiating excitation light.
  • the body tissue is irradiated with excitation light to observe fluorescence from the body tissue (autofluorescence observation), or a reagent such as indocyanine green (ICG) is locally administered to the body tissue and applied to the body tissue. It is possible to obtain a fluorescence image by irradiating excitation light corresponding to the fluorescence wavelength of the reagent.
  • the light source device 11203 can be configured to be able to supply narrowband light and / or excitation light corresponding to such special light observation.
  • FIG. 25 is a block diagram illustrating an example of functional configurations of the camera head 11102 and the CCU 11201 illustrated in FIG.
  • the camera head 11102 includes a lens unit 11401, an imaging unit 11402, a drive unit 11403, a communication unit 11404, and a camera head control unit 11405.
  • the CCU 11201 includes a communication unit 11411, an image processing unit 11412, and a control unit 11413.
  • the camera head 11102 and the CCU 11201 are connected to each other by a transmission cable 11400 so that they can communicate with each other.
  • the lens unit 11401 is an optical system provided at a connection portion with the lens barrel 11101. Observation light taken from the tip of the lens barrel 11101 is guided to the camera head 11102 and enters the lens unit 11401.
  • the lens unit 11401 is configured by combining a plurality of lenses including a zoom lens and a focus lens.
  • the imaging unit 11402 includes an imaging element.
  • One (so-called single plate type) image sensor may be included in the imaging unit 11402, or a plurality (so-called multi-plate type) may be used.
  • image signals corresponding to RGB may be generated by each imaging element, and a color image may be obtained by combining them.
  • the imaging unit 11402 may be configured to include a pair of imaging elements for acquiring right-eye and left-eye image signals corresponding to 3D (Dimensional) display. By performing the 3D display, the operator 11131 can more accurately grasp the depth of the living tissue in the surgical site.
  • 3D 3D
  • the imaging unit 11402 is not necessarily provided in the camera head 11102.
  • the imaging unit 11402 may be provided inside the lens barrel 11101 immediately after the objective lens.
  • the driving unit 11403 is configured by an actuator, and moves the zoom lens and the focus lens of the lens unit 11401 by a predetermined distance along the optical axis under the control of the camera head control unit 11405. Thereby, the magnification and the focus of the image captured by the imaging unit 11402 can be adjusted as appropriate.
  • the communication unit 11404 is configured by a communication device for transmitting and receiving various types of information to and from the CCU 11201.
  • the communication unit 11404 transmits the image signal obtained from the imaging unit 11402 as RAW data to the CCU 11201 via the transmission cable 11400.
  • the communication unit 11404 receives a control signal for controlling driving of the camera head 11102 from the CCU 11201 and supplies the control signal to the camera head control unit 11405.
  • the control signal includes, for example, information for designating the frame rate of the captured image, information for designating the exposure value at the time of imaging, and / or information for designating the magnification and focus of the captured image. Contains information about the condition.
  • the imaging conditions such as the frame rate, exposure value, magnification, and focus may be appropriately specified by the user, or may be automatically set by the control unit 11413 of the CCU 11201 based on the acquired image signal. Good. In the latter case, a so-called AE (Auto Exposure) function, AF (Auto Focus) function, and AWB (Auto White Balance) function are mounted on the endoscope 11100.
  • AE Auto Exposure
  • AF Automatic Focus
  • AWB Auto White Balance
  • the camera head control unit 11405 controls driving of the camera head 11102 based on a control signal from the CCU 11201 received via the communication unit 11404.
  • the communication unit 11411 is configured by a communication device for transmitting and receiving various types of information to and from the camera head 11102.
  • the communication unit 11411 receives an image signal transmitted from the camera head 11102 via the transmission cable 11400.
  • the communication unit 11411 transmits a control signal for controlling driving of the camera head 11102 to the camera head 11102.
  • the image signal and the control signal can be transmitted by electrical communication, optical communication, or the like.
  • the image processing unit 11412 performs various types of image processing on the image signal that is RAW data transmitted from the camera head 11102.
  • the control unit 11413 performs various types of control related to imaging of the surgical site by the endoscope 11100 and display of a captured image obtained by imaging of the surgical site. For example, the control unit 11413 generates a control signal for controlling driving of the camera head 11102.
  • control unit 11413 causes the display device 11202 to display a picked-up image showing the surgical part or the like based on the image signal subjected to the image processing by the image processing unit 11412.
  • the control unit 11413 may recognize various objects in the captured image using various image recognition techniques.
  • the control unit 11413 detects surgical tools such as forceps, specific biological parts, bleeding, mist when using the energy treatment tool 11112, and the like by detecting the shape and color of the edge of the object included in the captured image. Can be recognized.
  • the control unit 11413 may display various types of surgery support information superimposed on the image of the surgical unit using the recognition result. Surgery support information is displayed in a superimposed manner and presented to the operator 11131, thereby reducing the burden on the operator 11131 and allowing the operator 11131 to proceed with surgery reliably.
  • the transmission cable 11400 for connecting the camera head 11102 and the CCU 11201 is an electric signal cable corresponding to electric signal communication, an optical fiber corresponding to optical communication, or a composite cable thereof.
  • communication is performed by wire using the transmission cable 11400.
  • communication between the camera head 11102 and the CCU 11201 may be performed wirelessly.
  • the technology according to the present disclosure can be applied to the imaging unit 11402 of the camera head 11102 among the configurations described above.
  • the semiconductor device 1 according to each embodiment described above can be applied as the imaging unit 11402.
  • a clearer surgical part image can be obtained while the camera head 11102 is downsized.
  • the technology according to the present disclosure can be applied to various products.
  • the technology according to the present disclosure is realized as a device that is mounted on any type of mobile body such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, and a robot. May be.
  • FIG. 26 is a block diagram illustrating a schematic configuration example of a vehicle control system that is an example of a mobile control system to which the technology according to the present disclosure can be applied.
  • the vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001.
  • the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside information detection unit 12030, an in-vehicle information detection unit 12040, and an integrated control unit 12050.
  • a microcomputer 12051, an audio image output unit 12052, and an in-vehicle network I / F (interface) 12053 are illustrated.
  • the drive system control unit 12010 controls the operation of the device related to the drive system of the vehicle according to various programs.
  • the drive system control unit 12010 includes a driving force generator for generating a driving force of a vehicle such as an internal combustion engine or a driving motor, a driving force transmission mechanism for transmitting the driving force to wheels, and a steering angle of the vehicle. It functions as a control device such as a steering mechanism that adjusts and a braking device that generates a braking force of the vehicle.
  • the body system control unit 12020 controls the operation of various devices mounted on the vehicle body according to various programs.
  • the body system control unit 12020 functions as a keyless entry system, a smart key system, a power window device, or a control device for various lamps such as a headlamp, a back lamp, a brake lamp, a blinker, or a fog lamp.
  • the body control unit 12020 can be input with radio waves transmitted from a portable device that substitutes for a key or signals from various switches.
  • the body system control unit 12020 receives input of these radio waves or signals, and controls a door lock device, a power window device, a lamp, and the like of the vehicle.
  • the vehicle outside information detection unit 12030 detects information outside the vehicle on which the vehicle control system 12000 is mounted.
  • the imaging unit 12031 is connected to the vehicle exterior information detection unit 12030.
  • the vehicle exterior information detection unit 12030 causes the imaging unit 12031 to capture an image outside the vehicle and receives the captured image.
  • the vehicle outside information detection unit 12030 may perform an object detection process or a distance detection process such as a person, a car, an obstacle, a sign, or a character on a road surface based on the received image.
  • the imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of received light.
  • the imaging unit 12031 can output an electrical signal as an image, or can output it as distance measurement information. Further, the light received by the imaging unit 12031 may be visible light or invisible light such as infrared rays.
  • the vehicle interior information detection unit 12040 detects vehicle interior information.
  • a driver state detection unit 12041 that detects a driver's state is connected to the in-vehicle information detection unit 12040.
  • the driver state detection unit 12041 includes, for example, a camera that images the driver, and the vehicle interior information detection unit 12040 determines the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041. It may be calculated or it may be determined whether the driver is asleep.
  • the microcomputer 12051 calculates a control target value of the driving force generator, the steering mechanism, or the braking device based on the information inside / outside the vehicle acquired by the vehicle outside information detection unit 12030 or the vehicle interior information detection unit 12040, and the drive system control unit A control command can be output to 12010.
  • the microcomputer 12051 realizes an ADAS (Advanced Driver Assistance System) function including vehicle collision avoidance or impact mitigation, following traveling based on inter-vehicle distance, vehicle speed maintaining traveling, vehicle collision warning, or vehicle lane departure warning, etc. It is possible to perform cooperative control for the purpose.
  • ADAS Advanced Driver Assistance System
  • the microcomputer 12051 controls the driving force generator, the steering mechanism, the braking device, and the like based on the information around the vehicle acquired by the vehicle exterior information detection unit 12030 or the vehicle interior information detection unit 12040. It is possible to perform cooperative control for the purpose of automatic driving that autonomously travels without depending on the operation.
  • the microcomputer 12051 can output a control command to the body system control unit 12020 based on information outside the vehicle acquired by the vehicle outside information detection unit 12030.
  • the microcomputer 12051 controls the headlamp according to the position of the preceding vehicle or the oncoming vehicle detected by the outside information detection unit 12030, and performs cooperative control for the purpose of anti-glare, such as switching from a high beam to a low beam. It can be carried out.
  • the sound image output unit 12052 transmits an output signal of at least one of sound and image to an output device capable of visually or audibly notifying information to a vehicle occupant or the outside of the vehicle.
  • an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are illustrated as output devices.
  • the display unit 12062 may include at least one of an on-board display and a head-up display, for example.
  • FIG. 27 is a diagram illustrating an example of an installation position of the imaging unit 12031.
  • the vehicle 12100 includes imaging units 12101, 12102, 12103, 12104, and 12105 as the imaging unit 12031.
  • the imaging units 12101, 12102, 12103, 12104, and 12105 are provided, for example, at positions such as a front nose, a side mirror, a rear bumper, a back door, and an upper part of a windshield in the vehicle interior of the vehicle 12100.
  • the imaging unit 12101 provided in the front nose and the imaging unit 12105 provided in the upper part of the windshield in the vehicle interior mainly acquire an image in front of the vehicle 12100.
  • the imaging units 12102 and 12103 provided in the side mirror mainly acquire an image of the side of the vehicle 12100.
  • the imaging unit 12104 provided in the rear bumper or the back door mainly acquires an image behind the vehicle 12100.
  • the forward images acquired by the imaging units 12101 and 12105 are mainly used for detecting a preceding vehicle or a pedestrian, an obstacle, a traffic light, a traffic sign, a lane, or the like.
  • FIG. 27 shows an example of the shooting range of the imaging units 12101 to 12104.
  • the imaging range 12111 indicates the imaging range of the imaging unit 12101 provided in the front nose
  • the imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided in the side mirrors, respectively
  • the imaging range 12114 The imaging range of the imaging part 12104 provided in the rear bumper or the back door is shown. For example, by superimposing the image data captured by the imaging units 12101 to 12104, an overhead image when the vehicle 12100 is viewed from above is obtained.
  • At least one of the imaging units 12101 to 12104 may have a function of acquiring distance information.
  • at least one of the imaging units 12101 to 12104 may be a stereo camera including a plurality of imaging elements, or may be an imaging element having pixels for phase difference detection.
  • the microcomputer 12051 based on the distance information obtained from the imaging units 12101 to 12104, the distance to each three-dimensional object in the imaging range 12111 to 12114 and the temporal change in this distance (relative speed with respect to the vehicle 12100).
  • a predetermined speed for example, 0 km / h or more
  • the microcomputer 12051 can set an inter-vehicle distance to be secured in advance before the preceding vehicle, and can perform automatic brake control (including follow-up stop control), automatic acceleration control (including follow-up start control), and the like.
  • automatic brake control including follow-up stop control
  • automatic acceleration control including follow-up start control
  • cooperative control for the purpose of autonomous driving or the like autonomously traveling without depending on the operation of the driver can be performed.
  • the microcomputer 12051 converts the three-dimensional object data related to the three-dimensional object to other three-dimensional objects such as a two-wheeled vehicle, a normal vehicle, a large vehicle, a pedestrian, and a utility pole based on the distance information obtained from the imaging units 12101 to 12104. It can be classified and extracted and used for automatic avoidance of obstacles.
  • the microcomputer 12051 identifies obstacles around the vehicle 12100 as obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see.
  • the microcomputer 12051 determines the collision risk indicating the risk of collision with each obstacle, and when the collision risk is equal to or higher than the set value and there is a possibility of collision, the microcomputer 12051 is connected via the audio speaker 12061 or the display unit 12062. By outputting an alarm to the driver and performing forced deceleration or avoidance steering via the drive system control unit 12010, driving assistance for collision avoidance can be performed.
  • At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared rays.
  • the microcomputer 12051 can recognize a pedestrian by determining whether a pedestrian is present in the captured images of the imaging units 12101 to 12104. Such pedestrian recognition is, for example, whether or not the user is a pedestrian by performing a pattern matching process on a sequence of feature points indicating the outline of an object and a procedure for extracting feature points in the captured images of the imaging units 12101 to 12104 as infrared cameras. It is carried out by the procedure for determining.
  • the audio image output unit 12052 When the microcomputer 12051 determines that there is a pedestrian in the captured images of the imaging units 12101 to 12104 and recognizes the pedestrian, the audio image output unit 12052 has a rectangular contour line for emphasizing the recognized pedestrian.
  • the display unit 12062 is controlled so as to be superimposed and displayed.
  • voice image output part 12052 may control the display part 12062 so that the icon etc. which show a pedestrian may be displayed on a desired position.
  • the technology according to the present disclosure can be applied to the imaging unit 12031 among the configurations described above.
  • the semiconductor device 1 according to each of the above-described embodiments can be applied as the imaging unit 12031.
  • Embodiments of the present technology are not limited to the above-described embodiments, and various modifications can be made without departing from the gist of the present technology.
  • this technique can also take the following structures.
  • a second substrate including a second transistor for driving the light emitting element, The first substrate is The light emitting element and the light receiving element;
  • a semiconductor device comprising: a through electrode that passes through the first substrate and transmits a drive signal of the light emitting element from the second substrate.
  • the light emitting element is an organic EL film.
  • the light emitting element emits white light, The semiconductor device according to (9), further including an R, G, or B color filter on an upper side of the light emitting element.
  • the light emitting element emits white light, The semiconductor device according to (9), further including a glass substrate on which an R, G, or B color filter is formed above the light emitting element.
  • the light emitting element emits light of R, G, or B color.
  • the second substrate and the first substrate are electrically connected by directly bonding metal wirings of the wiring layers of each substrate in a partial region.
  • An electronic apparatus comprising: a semiconductor device having a through electrode that passes through the first substrate and transmits a driving signal of the light emitting element from the second substrate.

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  • Inorganic Chemistry (AREA)
  • Sustainable Development (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Light Receiving Elements (AREA)

Abstract

La présente invention concerne : un dispositif à semi-conducteur qui comprend à la fois un élément électroluminescent et un élément de réception de lumière, ledit dispositif à semi-conducteur permettant une miniaturisation supplémentaire; et un appareil électronique. Ce dispositif à semi-conducteur comprend : un premier substrat, qui comprend un premier transistor qui commande un élément de réception de lumière; et un second substrat, qui comprend un second transistor qui commande un élément électroluminescent. Le premier substrat comprend : l'élément électroluminescent et l'élément de réception de lumière; et une électrode traversante, qui pénètre dans le premier substrat, et transmet, à partir du second substrat, un signal de commande pour l'élément électroluminescent. La présente technologie peut être appliquée, par exemple, à un appareil électronique qui comprend à la fois un élément électroluminescent et un élément de réception de lumière.
PCT/JP2018/010395 2017-03-31 2018-03-16 Dispositif à semi-conducteur et appareil électronique WO2018180577A1 (fr)

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