WO2018180305A1 - Glass frit, glass frit production method, and aluminium paste - Google Patents
Glass frit, glass frit production method, and aluminium paste Download PDFInfo
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- WO2018180305A1 WO2018180305A1 PCT/JP2018/008740 JP2018008740W WO2018180305A1 WO 2018180305 A1 WO2018180305 A1 WO 2018180305A1 JP 2018008740 W JP2018008740 W JP 2018008740W WO 2018180305 A1 WO2018180305 A1 WO 2018180305A1
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- Prior art keywords
- glass frit
- mol
- glass
- aluminum
- vanadium
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- 239000011521 glass Substances 0.000 title claims abstract description 131
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 111
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 104
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000004411 aluminium Substances 0.000 title abstract 4
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 35
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims abstract description 35
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052788 barium Inorganic materials 0.000 claims abstract description 33
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims abstract description 33
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000006060 molten glass Substances 0.000 claims abstract description 25
- 229910052742 iron Inorganic materials 0.000 claims abstract description 17
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 15
- 238000010298 pulverizing process Methods 0.000 claims abstract description 15
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 14
- 239000011651 chromium Substances 0.000 claims abstract description 14
- 229910052802 copper Inorganic materials 0.000 claims abstract description 14
- 239000010949 copper Substances 0.000 claims abstract description 14
- 239000000155 melt Substances 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 239000011575 calcium Substances 0.000 claims description 25
- 238000005245 sintering Methods 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 24
- 239000010703 silicon Substances 0.000 claims description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 22
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 18
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 18
- 239000000654 additive Substances 0.000 claims description 18
- 229910052796 boron Inorganic materials 0.000 claims description 18
- 229910052791 calcium Inorganic materials 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 13
- 229910052593 corundum Inorganic materials 0.000 claims description 13
- 229910052698 phosphorus Inorganic materials 0.000 claims description 13
- 239000011574 phosphorus Substances 0.000 claims description 13
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 13
- 239000012634 fragment Substances 0.000 claims description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 11
- PSGCRHLFZJRYEA-UHFFFAOYSA-N phosphorus p2o5 Chemical compound P.O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 PSGCRHLFZJRYEA-UHFFFAOYSA-N 0.000 claims description 11
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 9
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 8
- 230000000996 additive effect Effects 0.000 claims description 7
- 229910052681 coesite Inorganic materials 0.000 claims description 7
- 229910052906 cristobalite Inorganic materials 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 229910052682 stishovite Inorganic materials 0.000 claims description 7
- 229910052905 tridymite Inorganic materials 0.000 claims description 7
- 239000001506 calcium phosphate Substances 0.000 claims description 6
- QORWJWZARLRLPR-UHFFFAOYSA-H tricalcium bis(phosphate) Chemical compound [Ca+2].[Ca+2].[Ca+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O QORWJWZARLRLPR-UHFFFAOYSA-H 0.000 claims description 6
- 235000019731 tricalcium phosphate Nutrition 0.000 claims description 5
- 229910000391 tricalcium phosphate Inorganic materials 0.000 claims description 5
- 229940078499 tricalcium phosphate Drugs 0.000 claims description 5
- 229910019142 PO4 Inorganic materials 0.000 claims description 4
- 239000012752 auxiliary agent Substances 0.000 claims description 4
- ROPDWRCJTIRLTR-UHFFFAOYSA-L calcium metaphosphate Chemical compound [Ca+2].[O-]P(=O)=O.[O-]P(=O)=O ROPDWRCJTIRLTR-UHFFFAOYSA-L 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 9
- 239000002184 metal Substances 0.000 abstract description 9
- 238000001816 cooling Methods 0.000 abstract description 7
- 150000002739 metals Chemical class 0.000 abstract description 4
- 239000002994 raw material Substances 0.000 description 25
- 239000000843 powder Substances 0.000 description 23
- 229960005069 calcium Drugs 0.000 description 15
- 238000002844 melting Methods 0.000 description 14
- 230000008018 melting Effects 0.000 description 14
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 12
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 8
- 238000002474 experimental method Methods 0.000 description 7
- 230000002411 adverse Effects 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000010304 firing Methods 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- 229910002092 carbon dioxide Inorganic materials 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 238000004090 dissolution Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- -1 phosphorus compound Chemical class 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000004017 vitrification Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910000389 calcium phosphate Inorganic materials 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- KXWBWCWPLXBJAN-UHFFFAOYSA-N [Sb].[W] Chemical compound [Sb].[W] KXWBWCWPLXBJAN-UHFFFAOYSA-N 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- YYRMJZQKEFZXMX-UHFFFAOYSA-L calcium bis(dihydrogenphosphate) Chemical compound [Ca+2].OP(O)([O-])=O.OP(O)([O-])=O YYRMJZQKEFZXMX-UHFFFAOYSA-L 0.000 description 1
- 229940062672 calcium dihydrogen phosphate Drugs 0.000 description 1
- 229960001714 calcium phosphate Drugs 0.000 description 1
- 235000011010 calcium phosphates Nutrition 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Substances OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000013373 food additive Nutrition 0.000 description 1
- 239000002778 food additive Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 235000019691 monocalcium phosphate Nutrition 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/08—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances quartz; glass; glass wool; slag wool; vitreous enamels
- H01B3/084—Glass or glass wool in binder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/08—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances quartz; glass; glass wool; slag wool; vitreous enamels
Abstract
Description
バリウムBaO 22.22モル%
・サンプルNo.2:バナジウムV2O5 65モル%
バリウムBaO2 . 25モル%
アルミAl2O3 5モル%
ボロンB2O3 3モル%
シリコンSiO2 2モル%
・サンプルNo.3:バナジウムV2O5 60モル%
バリウムBaO2 . 25モル%
アルミAl2O3 6モル%
ボロンB2O3 5モル%
シリコンSiO2 4モル%
S2は、ガラス破片(3ー5mm)を作製する。これは、下側に記載したように、S1で作製した溶融ガラスを冷やした金属ローラーに流し込みながら作製する。即ち、溶融ガラスを水冷した回転する金属ローラーの間に流し込み急速冷却して3-5mm程度のガラス破片を作製する。 ・ Sample No. 1: Vanadium V2O5 77.78 mol%
Barium BaO 22.22 mol%
・ Sample No. 2: Vanadium V2O5 65 mol%
Barium BaO2. 25 mol%
Aluminum Al2O3 5 mol%
Boron B2O3 3mol%
・ Sample No. 3: Vanadium V2O5 60 mol%
Barium BaO2. 25 mol%
Aluminum Al2O3 6mol%
Boron B2O3 5mol%
S2 produces glass fragments (3-5 mm). As described below, this is produced while pouring the molten glass produced in S1 into a cooled metal roller. That is, the molten glass is poured between rotating metal rollers cooled with water and rapidly cooled to produce glass fragments of about 3-5 mm.
・サンプルNo.1:バナジウムV2O5 77.78モル%
バリウムBaO 22.22モル%
の原料からなる。他のサンプルも図示の原料からなる。 (B) of FIG. 2 shows the mol% of the raw material of each sample. For example, sample no. 1 is
・ Sample No. 1: Vanadium V2O5 77.78 mol%
Barium BaO 22.22 mol%
Made of raw materials. Other samples also consist of the raw materials shown.
・バリウムBaO 15~30モル%
・亜鉛ZnO -
・ニッケルNiO 0モル%
・アルミAl2O3 0~10モル%
・ボロンB2O3 0~7モル%
・シリコンSiO2 0~7モル%
・鉄Fe2O3 0モル%
図2の(c)は、調合比(g)を示す。これは、各原料を図2の(b)のモル%の割合で、調合したときのgの1例を表したものである。 ・ Vanadium V2O5 55-80 mol%
・ Barium BaO 15-30 mol%
・ Zinc ZnO −
・ Aluminum Al2O3 0-10 mol%
・ Boron B2O3 0-7 mol%
・ Silicon SiO2 0-7 mol%
-
(C) of FIG. 2 shows a preparation ratio (g). This represents one example of g when each raw material is blended in the proportion of mol% of (b) in FIG.
、 ・軟化性観察:図1で作製したガラスフリットをルツボに入れて温度を上昇させた場合に、
・サンプルNo.1は570℃で表面が溶け始め、595度で完全に溶けた。 ・ Sample No. 2, no. It was observed that none of 3 was crystallized.
Softness observation: When the glass frit produced in FIG. 1 is put in a crucible and the temperature is raised,
・ Sample No. No. 1 started to melt at 570 ° C. and completely melted at 595 degrees.
・ボロンB2O3(0~7モル%):
・シリコンSiO2(0~7モル%):
・この3成分の配合比率のバランスが良いことが重要である。そうでないと均一性が保たれず結晶が析出してしまう。任意の2成分又は1成分又はなしでもよい。但し耐水性を保つにはシリコンSiO2を入れるのが良い。 Aluminum Al2O3 (0 to 10 mol%):
Boron B2O3 (0-7 mol%):
-Silicon SiO2 (0-7 mol%):
-It is important that the mixing ratio of these three components is well balanced. Otherwise, uniformity is not maintained and crystals are deposited. There may be any two components or one component or none. However, it is preferable to add silicon SiO2 in order to maintain water resistance.
(1)アルミ微粉末、(2)本発明のガラスフリット(微粉末)、(3)有機材、(4)有機溶媒、(5)樹脂の順番(あるいは順番を入れ替えてもよい)を容器に入れて良く攪拌することにより作製する。 In order to prepare an aluminum paste mixed with glass frit, for example, (1) aluminum fine powder, (2) glass frit of the present invention (fine powder), (3) organic material, (4) organic solvent, (5) ) Prepare by placing the resin order (or the order may be changed) in a container and stirring well.
原料(材料)
V2O5 25 24 24
BaO 28 25 25
B2O3 15 17 15
Al2O3 2 2 2
P2O5 13 13 13
CaO 13 13 13
ZnO 4 4 4
WO3 0 0 2
SbO3 0 2 2
(単位はモル%である。)
S12は、ガラス破片(3ー5mm)を作製する。これは、下側に記載したように、S11で作製した溶融ガラスを冷やした金属ローラーに流し込みながら作製する。即ち、溶融ガラスを水冷した回転する金属ローラーの間に流し込み急速冷却して3-5mm程度のガラス破片を作製する。
Raw material (material)
(The unit is mol%.)
S12 produces a glass piece (3-5 mm). As described below, this is produced while pouring the molten glass produced in S11 into a cooled metal roller. That is, the molten glass is poured between rotating metal rollers cooled with water and rapidly cooled to produce glass fragments of about 3-5 mm.
例えばサンプル11は、
・バナジウムV2O5 25モル%
・バリウムBaO 28モル%
・ボロンB2O3 15モル%
・アルミAl2O3 2モル%
・リンP2O5 13モル%
・カルシウムCa 13モル%
・亜鉛ZnO 4モル%
・タングステンを3 0モル%
・アンチモンSbO3 0モル%
の原料からなる。 In FIG. 8, “molar ratio%” in “molar ratio% (range)” of (b) indicates the molar% of the raw material of the sample.
For example,
・
・ Barium BaO 28mol%
・ Boron B2O3 15mol%
・ Aluminum Al2O3 2mol%
・ Phosphorus P2O5 13mol%
・
・ Zinc ZnO 4mol%
・ 30 mol% tungsten
-
Made of raw materials.
・バリウムBaO 10~40モル%
・ボロンB2O3 1~20モル%
・アルミAl2O3 1~10モル%
・リンP2O5 5~20モル%
・カルシウムCa 5~20モル%
・亜鉛ZnO 1~10モル%
・タングステンを3 0
・アンチモンSbO3 0
図8において、(c)は、質量(g)を示す。これは、各原料を図8の(b)のモル%の割合で、調合したときのgの1例を表したものである。 ・ Vanadium V2O5 10-55 mol%
・ Barium BaO 10-40 mol%
・
・
・ Phosphorus P2O5 5-20 mol%
・ Calcium Ca 5-20 mol%
・
・ Tungsten is 30
In FIG. 8, (c) shows mass (g). This represents one example of g when each raw material is blended in the proportion of mol% of (b) in FIG.
・ボロンB2O3(5~20モル%):
・この2成分の配合比率のバランスが重要である。そうでないと均一性が保たれず結晶が析出してしまい、ガラス化しない。 Aluminum Al2O3 (1 to 10 mol%):
Boron B2O3 (5 to 20 mol%):
-The balance of the mixing ratio of these two components is important. Otherwise, uniformity will not be maintained and crystals will be deposited and will not vitrify.
・純度:99.7%以上
・平均粒度:1~20μm
・形状:球状、楕円球状
(2)本発明のバナジン酸塩ガラス(ガラスフリット):
・粒径:1~3μm
・アルミペースト全体の重量比0.1~1%
(3)その他のガラス粉末:
・粒径:1~3μm
・アルミペースト全体の重量比0~1%
(4)樹脂:
・アルミペースト全体の重量比0.1~3%
・エチルセルローズ類、ニトロセルローズ類等
(5)溶剤:
・アルミペースト全体の重量比~25%位(スクリーン印刷等に適する粘土)
・ジエチレングリコール、モノブチルエーテル等
図13は、本発明のアルミペーストの製造フローチャートを示す。 (1) Aluminum powder:
・ Purity: 99.7% or more ・ Average particle size: 1 to 20 μm
Shape: spherical, oval spherical (2) Vanadate glass (glass frit) of the present invention:
・ Particle size: 1 to 3 μm
-Weight ratio of aluminum paste as a whole 0.1-1%
(3) Other glass powders:
・ Particle size: 1 to 3 μm
-Weight ratio of aluminum paste as a whole: 0 to 1%
(4) Resin:
-Weight ratio of aluminum paste as a whole 0.1-3%
・ Ethylcelluloses, nitrocelluloses, etc. (5) Solvent:
・ Approximately 25% by weight of aluminum paste (clay suitable for screen printing)
-Diethylene glycol, monobutyl ether, etc. FIG. 13 shows a production flowchart of the aluminum paste of the present invention.
Claims (17)
- 基板に塗布・焼結して導電性電極を形成する導電性ペーストに混入するガラスフリットにおいて、
バナジウムV2O5を55から80モル%とバリウムBaOを15から30モル%を主材料とし加熱して溶融ガラスを生成し、これを急速冷却した破片を粉砕して製造した650℃以下で溶融することを特徴とするガラスフリット。 In a glass frit mixed in a conductive paste that is applied and sintered to a substrate to form a conductive electrode,
Vanadium V2O5 55 to 80 mol% and barium BaO 15 to 30 mol% are heated as main materials to produce a molten glass, and this is melted at 650 ° C or lower produced by pulverizing rapidly cooled fragments. Characteristic glass frit. - 添加物として、アルミAl2O3を0から10モル%、ボロンB2O3を0から7モル%、およびシリコンSiO2を0から7モル%の1つ以上を前記主材料に混入し加熱して前記溶融ガラスを生成したことを特徴とする請求項1に記載のガラスフリット。 As the additive, one or more of aluminum Al2O3 0-10 mol%, boron B2O3 0-7 mol%, and silicon SiO2 0-7 mol% are mixed in the main material and heated to produce the molten glass. The glass frit according to claim 1, wherein the glass frit is formed.
- 鉄、銅、ニッケル、クロムを含まないことを特徴とする請求項1から請求項2のいずれかに記載のガラスフリット。 The glass frit according to claim 1, which does not contain iron, copper, nickel, or chromium.
- 前記導電性ペーストとして、アルミペーストとしたことを特徴とする請求項1から請求項3のいずれかに記載のガラスフリット。 The glass frit according to any one of claims 1 to 3, wherein the conductive paste is an aluminum paste.
- 前記基板に塗布・焼結して導電性電極を形成として、太陽電池の基板に塗布・焼結して導電性アルミ電極を形成としたことを特徴とする請求項1から請求項4のいずれかに記載のガラスフリット。 The conductive aluminum electrode is formed by applying and sintering to the substrate to form a conductive electrode, and applying and sintering to the substrate of the solar cell. The glass frit described in 1.
- 請求項1から請求項5のいずれかに記載のガラスフリットを助剤として添加したアルミペースト。 An aluminum paste to which the glass frit according to any one of claims 1 to 5 is added as an auxiliary agent.
- 基板に塗布・焼結して導電性電極を形成する導電性ペーストに混入するガラスフリットにおいて、
バナジウムV2O5を10から55モル%とバリウムBaOを10から40モル%を主材料とし加熱して溶融ガラスを生成し、これを急速冷却した破片を粉砕して製造した650℃以下で溶融することを特徴とするガラスフリット。 In a glass frit mixed in a conductive paste that is applied and sintered to a substrate to form a conductive electrode,
Heating with 10 to 55 mol% of vanadium V2O5 and 10 to 40 mol% of barium BaO as the main materials produces a molten glass, and melts it at 650 ° C or less produced by pulverizing rapidly cooled fragments. Characteristic glass frit. - 添加物として、アルミAl2O3を1から10モル%およびボロンB2O3を1から20モル%を前記主材料に混入し加熱して前記溶融ガラスを生成したことを特徴とする請求項7に記載のガラスフリット。 The glass frit according to claim 7, wherein 1 to 10 mol% of aluminum Al2O3 and 1 to 20 mol% of boron B2O3 are mixed in the main material as additives and heated to produce the molten glass. .
- 添加物として、リンP2O5を5から20モル%およびカルシウムCaOを5から20ル%を前記主材料に混入し加熱して前記溶融ガラスを生成したことを特徴とする請求項7から請求項8のいずれかに記載のガラスフリット。 9. The molten glass according to claim 7, wherein 5 to 20 mol% of phosphorus P2O5 and 5 to 20 mol% of calcium CaO are mixed in the main material and heated as additives. The glass frit in any one.
- 前記添加物であるリンP2O5と一緒に添加する前記カルシウムCaOとして、リンとアルカリ土類金属の1つあるいは1つ以上との化合物としたことを特徴とする請求項8記載のガラスフリット。 The glass frit according to claim 8, wherein the calcium CaO added together with phosphorus P2O5 as the additive is a compound of phosphorus and one or more of alkaline earth metals.
- 前記添加物であるリンP2O5と一緒に添加する前記カルシウムCaOとして、リンとアルカリ土類金属の1つあるいは1つ以上との化合物である、リン酸三カルシウムCa3(PO4)2あるいはメタリン酸カルシウムCa(PO3)2としたことを特徴とする請求項10記載のガラスフリット。 As the calcium CaO to be added together with the phosphorus P2O5 which is the additive, tricalcium phosphate Ca3 (PO4) 2 or calcium metaphosphate Ca (which is a compound of phosphorus and one or more of alkaline earth metals) The glass frit according to claim 10, wherein PO3) 2.
- 鉄、銅、ニッケル、クロムを含まないことを特徴とする請求項7から請求項11のいずれかに記載のガラスフリット。 The glass frit according to any one of claims 7 to 11, which does not contain iron, copper, nickel, or chromium.
- 前記導電性ペーストとして、アルミペーストとしたことを特徴とする請求項7から請求項12のいずれかに記載のガラスフリット。 The glass frit according to any one of claims 7 to 12, wherein the conductive paste is an aluminum paste.
- 前記基板に塗布・焼結して導電性電極を形成として、太陽電池の基板に塗布・焼結して導電性アルミ電極を形成としたことを特徴とする請求項7から請求項13のいずれかに記載のガラスフリット。 14. A conductive aluminum electrode is formed by applying and sintering to the substrate to form a conductive electrode, and applying and sintering to a substrate of a solar cell. The glass frit described in 1.
- 請求項7から請求項14のいずれかに記載のガラスフリットを助剤として添加したアルミペースト。 An aluminum paste to which the glass frit according to any one of claims 7 to 14 is added as an auxiliary agent.
- 基板に塗布・焼結して導電性電極を形成する導電性ペーストに混入するガラスフリット製造方法において、
バナジウムV2O5を55から80モル%とバリウムBaOを15から30モル%を主材料とし加熱して溶融ガラスを生成し、
該生成した溶融ガラスを急速冷却して破片を生成し、
該生成した破片を粉砕して650℃以下で溶融するガラスフリットを製造する
ことを特徴とするガラスフリット製造方法。 In a glass frit manufacturing method mixed in a conductive paste that is applied and sintered to a substrate to form a conductive electrode,
Vanadium V2O5 55 to 80 mol% and barium BaO 15 to 30 mol% are heated as main materials to produce molten glass,
The generated molten glass is rapidly cooled to produce fragments,
A method for producing a glass frit, characterized by producing a glass frit that is pulverized and melted at 650 ° C. or less. - 基板に塗布・焼結して導電性電極を形成する導電性ペーストに混入するガラスフリット製造方法において、
バナジウムV2O5を10から550モル%とバリウムBaOを10から40モル%を主材料とし加熱して溶融ガラスを生成し、
該生成した溶融ガラスを急速冷却して破片を生成し、
該生成した破片を粉砕して650℃以下で溶融するガラスフリットを製造する
ことを特徴とするガラスフリット製造方法。 In a glass frit manufacturing method mixed in a conductive paste that is applied and sintered to a substrate to form a conductive electrode,
Vanadium V2O5 is heated to 10 to 550 mol% and barium BaO to 10 to 40 mol% as main materials to produce molten glass,
The generated molten glass is rapidly cooled to produce fragments,
A method for producing a glass frit, characterized by producing a glass frit that is pulverized and melted at 650 ° C. or less.
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JP2011201714A (en) * | 2010-03-25 | 2011-10-13 | Hitachi Ltd | Glass composition and conductive paste for aluminum electrode wiring, electronic component provided with the aluminum electrode wiring, and method for producing the electronic component |
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JP2005097086A (en) * | 2003-08-29 | 2005-04-14 | Nippon Electric Glass Co Ltd | Glass paste |
JP2009221048A (en) * | 2008-03-17 | 2009-10-01 | Nippon Electric Glass Co Ltd | Vanadium-based glass composition and vanadium-based material |
JP2011201714A (en) * | 2010-03-25 | 2011-10-13 | Hitachi Ltd | Glass composition and conductive paste for aluminum electrode wiring, electronic component provided with the aluminum electrode wiring, and method for producing the electronic component |
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