WO2018171143A1 - 一种薄膜封装结构、薄膜封装方法及显示装置 - Google Patents

一种薄膜封装结构、薄膜封装方法及显示装置 Download PDF

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WO2018171143A1
WO2018171143A1 PCT/CN2017/102933 CN2017102933W WO2018171143A1 WO 2018171143 A1 WO2018171143 A1 WO 2018171143A1 CN 2017102933 W CN2017102933 W CN 2017102933W WO 2018171143 A1 WO2018171143 A1 WO 2018171143A1
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layer
buffer layer
thin film
plasma
organic
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PCT/CN2017/102933
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English (en)
French (fr)
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宋文峰
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京东方科技集团股份有限公司
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Priority to US15/779,996 priority Critical patent/US11588132B2/en
Publication of WO2018171143A1 publication Critical patent/WO2018171143A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

Definitions

  • the invention relates to a packaging technology of a photovoltaic device, in particular to a thin film packaging structure, a thin film packaging method and a display device.
  • OLED Organic Light-Emitting Diode
  • LCD Liquid Crystal Display
  • the present disclosure provides a thin film encapsulation structure, a thin film encapsulation method, and a display device, which can improve the contact surface characteristics of the organic layer coating in the multi-layer stacked thin film encapsulation structure, and improve the package quality.
  • Embodiments of the present invention provide a thin film encapsulation structure, including:
  • An inorganic layer, a buffer layer and an organic layer which are sequentially covered from the inside to the outside outside the electroluminescent unit structure;
  • the composition of the buffer layer is an organic substance, and the thickness of the buffer layer is smaller than the thickness of the organic layer.
  • the buffer layer is deposited by chemical vapor deposition PECVD;
  • the deposition of the buffer layer is in the same process chamber as the deposition of the inorganic layer.
  • the curing of the buffer layer is performed in a chemical vapor deposition PECVD chamber; or in a pre-treatment chamber of an inkjet printing IJP process; wherein the organic layer is performed by an inkjet printing IJP method Deposition.
  • the curing of the buffer layer is passed into a plasma;
  • the plasma comprises: an oxygen-containing plasma and/or a fluorine-containing plasma;
  • the curing of the buffer layer is different in the concentration of plasma that is introduced in different regions, or the type of plasma that is introduced in different regions is different;
  • the curing of the buffer layer is different in the concentration of the plasma introduced in different regions, including: the concentration of the plasma passing through the edge region of the buffer layer is lower than the plasma entering the central region. concentration;
  • the curing of the buffer layer is different in the type of plasma that is introduced in different regions, including: the edge region of the buffer layer is fed with a fluorine-containing plasma, and the central region is opened with an oxygen-containing plasma;
  • composition of the buffer layer includes: hexamethyldisiloxane, HMDSO.
  • the buffer layer has a thickness of from 0.1 micron to 0.3 micron.
  • Embodiments of the present invention provide a thin film encapsulation method, including:
  • the composition of the buffer layer is an organic substance, and the thickness of the buffer layer is smaller than the thickness of the organic layer.
  • the buffer layer is deposited by chemical vapor deposition PECVD;
  • the deposition of the buffer layer is in the same process chamber as the deposition of the inorganic layer.
  • the curing of the buffer layer is performed in a chemical vapor deposition PECVD chamber; or in a pre-treatment chamber of an inkjet printing IJP process; wherein the organic layer is performed by an inkjet printing IJP method Deposition.
  • the curing of the buffer layer is passed into a plasma;
  • the plasma comprises: an oxygen-containing plasma and/or a fluorine-containing plasma;
  • the curing of the buffer layer is different in the concentration of plasma that is introduced in different regions, or the type of plasma that is introduced in different regions is different;
  • the curing of the buffer layer is different in the concentration of the plasma introduced in different regions, including: the concentration of the plasma passing through the edge region of the buffer layer is lower than the plasma entering the central region. concentration;
  • the curing of the buffer layer is different in the type of plasma that is introduced in different regions, including: the edge region of the buffer layer is fed with a fluorine-containing plasma, and the central region is opened with an oxygen-containing plasma;
  • composition of the buffer layer includes: hexamethyldisiloxane, HMDSO.
  • the buffer layer has a thickness of from 0.1 micron to 0.3 micron.
  • Embodiments of the present invention provide a display device including an organic electroluminescent diode OLED device having the above-described thin film encapsulation structure.
  • Embodiments of the present invention provide a thin film encapsulation structure, including:
  • the main components of the inorganic layer include: tin oxide SnO x ;
  • the organic layer was coated by an inkjet printing IJP method.
  • the inorganic layer further comprises one or more of the following auxiliary components: tin fluoride SnF 2 , phosphorus pentoxide P 2 O 5 , tungsten trioxide WO 3 .
  • the organic layer when the organic layer is coated by the inkjet printing IJP method, it is heated in the stage region of the substrate and the heating amount in different regions is different.
  • the heating amount of the edge region is greater than the heating amount of the central region when the substrate region of the substrate is heated.
  • the embodiment of the invention further provides a film encapsulation method, comprising:
  • the organic layer was coated on the inorganic layer by an inkjet printing IJP method, and the substrate was heated at the bottom of the substrate during the coating process and the heating amount of the different regions was different.
  • the heating amount of the edge region is greater than the heating amount of the central region when the substrate region of the substrate is heated.
  • the inorganic layer further comprises one or more of the following auxiliary components: tin fluoride SnF 2 , phosphorus pentoxide P 2 O 5 , tungsten trioxide WO 3 .
  • Embodiments of the present invention provide a display device including an organic electroluminescent diode OLED device having the above-described thin film encapsulation structure.
  • a thin film encapsulation structure, a thin film encapsulation method and a display device disclosed in the embodiments of the present invention cover the inorganic layer, the buffer layer and the organic layer from the inside to the outside of the electroluminescent unit structure, and have organic
  • the organic layer is coated on the thin buffer layer of the layer property, which can improve the contact surface characteristics of the organic layer coating in the multilayer packaged film package structure and improve the package quality.
  • FIG. 1 is a schematic diagram of a multi-layer stacked thin film package structure in the prior art
  • FIG. 2 is a flowchart of a method for packaging a thin film according to Embodiment 1 of the present invention
  • FIG. 3 is a schematic structural view of a thin film encapsulation structure according to Embodiment 2 of the present invention.
  • Example 4 is a schematic view showing a structure of a thin film package according to Example 1 of the present invention.
  • FIG. 5 is a flowchart of a method for packaging a thin film according to Embodiment 3 of the present invention.
  • FIG. 6 is a schematic structural view of a thin film encapsulation structure according to Embodiment 4 of the present invention.
  • FIG. 7 is a schematic view showing a structure of a thin film package according to Example 2 of the present invention.
  • a multi-layer stacked thin film encapsulation structure includes, in order from the inside to the outside: 1) Subatrate 10, which can be used with glass Or a flexible substrate; 2) an electroluminescent unit (Electroluminescent Unit, EL Unit for short) 20, the layer includes an organic light-emitting unit of R, G, B three-color pixel array distribution; 3) an inorganic-organic overlapping structure; 4) Barrier film 40: This layer uses a flexible material for encapsulation protection of the entire organic light emitting unit.
  • the deposition of the inorganic layer is mainly performed by chemical enhanced chemical vapor deposition (PECVD) and atomic layer deposition (ALD). It can achieve efficient water and oxygen barrier requirements.
  • the organic layer deposition methods include: Vitex polymer monomer deposition method by Vitex, hybrid organic layer by PECVD method, and Ink Jet Printing (IJP).
  • Vitex polymer monomer deposition technology is prone to plugging problems and equipment maintenance costs are high, so this technology has not been widely promoted after development; and PECVD deposition of hexamethyldisiloxane HMDSO / silicon carbonitride
  • SiCN organic layer technology has problems in that the process is unstable and Mask cleaning is difficult. Therefore, the IJP technology is becoming more and more widely used in the thin film packaging process of the multilayer stack of the inorganic layer/organic layer/inorganic layer because the patterning requires no mask and high process stability.
  • inorganic layer deposition for example, PECVD
  • organic layer coating for example, IJP process
  • inorganic layer deposition corresponds to a high vacuum environment
  • the organic layer coating corresponds to a nitrogen N2 environment
  • a film encapsulation method includes:
  • the composition of the buffer layer is an organic substance, and the thickness of the buffer layer is smaller than the thickness of the organic layer;
  • the method may also include the following features:
  • the thickness t of the buffer layer satisfies the following condition: t is greater than or equal to 0.1 micrometer and less than or equal to 0.3 micrometer;
  • the composition of the buffer layer comprises: hexamethyldisiloxane, HMDSO;
  • the thin buffer layer has a shorter deposition time than the conventional thick organic layer, thereby facilitating the reduction of the difference in the interface between the organic layer and the inorganic layer; on the other hand, depositing a thin buffer layer on the surface of the inorganic layer compared to Depositing a conventional thick organic layer is more conducive to mask cleaning;
  • the buffer layer is deposited by chemical vapor deposition PECVD;
  • the deposition of the buffer layer and the deposition of the inorganic layer may be in the same process chamber, and a process flow is adopted, which can reduce the substrate alignment time, the process is continuous, and the intermediate interface has no defects. , can get better film;
  • the curing of the buffer layer is performed in a chemical vapor deposition PECVD chamber or in a pre-treatment chamber of an inkjet printing IJP process, wherein the organic layer is performed by an inkjet printing IJP method Deposition
  • the curing of the buffer layer may be placed in the PECVD chamber; if the time interval is long, The curing of the buffer layer can be placed in the IJP process pre-treatment chamber to ensure good contact angle characteristics.
  • the curing of the buffer layer is passed into a plasma;
  • the plasma comprises: an oxygen-containing plasma and/or a fluorine-containing plasma;
  • the curing of the buffer layer is different in the concentration of plasma that is introduced in different regions, or the type of plasma that is introduced in different regions is different;
  • the buffer layer is cured to pass an oxygen-containing plasma in a central region, and a fluorine-containing plasma is introduced in the edge region;
  • the curing of the buffer layer is different in the concentration of the plasma introduced in different regions, including: the concentration of the plasma passing through the edge region of the buffer layer is lower than the plasma entering the central region. concentration;
  • the organic layer is coated on the surface of the buffer layer by an inkjet printing IJP method
  • the interface characteristics can be accurately controlled; the plasma curing of the intensity can be improved by using sub-regions (around the periphery and the center portion). The edge of the ink flows.
  • a plasma oxygen-containing plasma or fluorine-containing plasma
  • a thin film encapsulation structure includes:
  • An inorganic layer 302, a buffer layer 303 and an organic layer 304 which are sequentially covered from the inside out in the exterior of the electroluminescent unit structure 301;
  • the composition of the buffer layer is an organic substance, and the thickness of the buffer layer is smaller than the thickness of the organic layer;
  • the thin film encapsulation structure may further include the following features:
  • the thickness t of the buffer layer satisfies the following condition: t is greater than or equal to 0.1 micrometer and Less than or equal to 0.3 microns;
  • the composition of the buffer layer comprises: hexamethyldisiloxane, HMDSO;
  • the thin buffer layer has a shorter deposition time than the conventional thick organic layer, thereby facilitating the reduction of the difference in the interface between the organic layer and the inorganic layer; on the other hand, depositing a thin buffer layer on the surface of the inorganic layer compared to Depositing a conventional thick organic layer is more conducive to mask cleaning;
  • the buffer layer is deposited by chemical vapor deposition PECVD;
  • the deposition of the buffer layer and the deposition of the inorganic layer may be in the same process chamber, and a process flow is adopted, which can reduce the substrate alignment time, the process is continuous, and the intermediate interface has no defects. , can get better film;
  • the curing of the buffer layer is performed in a chemical vapor deposition PECVD chamber or in a pre-treatment chamber of an inkjet printing IJP process, wherein the organic layer is performed by an inkjet printing IJP method Deposition
  • the curing of the buffer layer may be placed in the PECVD chamber; if the time interval is long, The curing of the buffer layer can be placed in the IJP process pre-treatment chamber to ensure good contact angle characteristics.
  • the curing of the buffer layer is passed into a plasma;
  • the plasma comprises: an oxygen-containing plasma and/or a fluorine-containing plasma;
  • the curing of the buffer layer is different in the concentration of plasma that is introduced in different regions, or the type of plasma that is introduced in different regions is different;
  • the buffer layer is cured to pass an oxygen-containing plasma in a central region, and a fluorine-containing plasma is introduced in the edge region;
  • the curing of the buffer layer is different in the concentration of the plasma introduced in different regions, including: the concentration of the plasma passing through the edge region of the buffer layer is lower than the plasma entering the central region. concentration;
  • the organic layer is coated on the surface of the buffer layer by an inkjet printing IJP method
  • the interface characteristics can be accurately controlled; the plasma curing of the intensity can be improved by using sub-regions (around the periphery and the center portion). The edge of the ink flows.
  • a plasma oxygen-containing plasma or fluorine-containing plasma
  • an "inorganic layer-buffer organic layer-organic layer” multi-layer stacked film package structure used in the present example may include the following components in order from the inside to the outside:
  • Subatrate 10 optional glass or flexible substrate
  • an electroluminescent unit (Electroluminescent Unit, EL Unit for short) 20: completing the fabrication of the organic light-emitting unit by evaporation; the layer includes an organic light-emitting unit of a R, G, B three-color pixel array;
  • Capping layer 30 can be carried out by evaporation, preferably ultraviolet absorption of organic substances; this layer is mainly used to reduce the impact of plasma damage (plamsa damage) and ultraviolet (UV) light The effect on the electroluminescent unit;
  • a first inorganic layer (Inorganic Layer) 401 mainly by using a PECVD method to deposit silicon nitride SiNx, silicon dioxide SiO2, silicon oxynitride SiON, aluminum oxide AlOx and other inorganic layers;
  • Buffer layer 402 depositing a thin organic layer by PECVD
  • the thickness of the buffer layer ranges from 0.1 micrometer to 0.3 micrometer; the thin buffer layer has a shorter deposition time than the conventional thick organic layer, thereby facilitating the reduction of the interface between the organic layer and the inorganic layer; Depositing a thin buffer layer on the surface of the inorganic layer is more conducive to mask cleaning than depositing a conventional thick organic layer;
  • the buffer layer is deposited by chemical vapor deposition PECVD; the buffer layer and the inorganic layer can be deposited in the same process chamber, and a process flow is adopted, which can reduce the substrate transmission alignment time, the process is continuous, and the intermediate interface is Poor defects, can get better film;
  • the material of the buffer layer is preferably plasma polymerized pp-hexamethyldisiloxane ether HMDSO;
  • the buffer layer can be cured by plasma (for example, oxygen-containing plasma, fluorine-containing plasma) to achieve accurate and timely control of the surface characteristics of the film; the process can be completed in a PECVD chamber or can be placed
  • plasma for example, oxygen-containing plasma, fluorine-containing plasma
  • the processing chamber is performed in the IJP process; considering the time interval between the organic layer and the buffer organic layer, and the contact angle characteristics may vary with time. According to the condition of the production line equipment, if the time interval is short, the curing of the buffer layer can be placed in the PECVD chamber; if the time interval is long, the curing of the buffer layer can be placed in the IJP process pre-treatment chamber to ensure good contact angle characteristics. .
  • plasma curing of different concentrations may be performed when the buffer layer is solidified; for example, the concentration of the plasma introduced into the edge region of the buffer layer is lower than the central region. The concentration of plasma that is passed in.
  • different plasmas may be introduced into the buffer layer when it is cured; for example, the buffer layer is cured by passing an oxygen-containing plasma in a central region and a fluorine-containing plasma in an edge region.
  • Organic Layer 403 coating of the organic layer by inkjet printing, mainly an epoxy resin-based organic material; curing of the layer is preferably carried out in a "heating + visible light” manner;
  • a second inorganic layer (Inorganic Layer) 404 mainly by PECVD deposition of silicon nitride SiNx, silicon dioxide SiO 2 , silicon oxynitride SiON, aluminum oxide AlOx and other inorganic layers;
  • Barrier film 50 The layer is packaged and protected by a flexible material such as polyethylene terephthalate PET or polyethylene naphthalate phthalate PEN;
  • a film encapsulation method includes:
  • the main components of the inorganic layer include: tin oxide SnO x ;
  • the method may also include the following features:
  • the inorganic layer further comprises one or more of the following auxiliary components: tin fluoride SnF 2 , phosphorus pentoxide P 2 O 5 , tungsten trioxide WO 3 ;
  • depositing an inorganic layer outside the electroluminescent unit structure comprises: depositing an inorganic layer by sputtering;
  • the inorganic layer has a thickness greater than or equal to 0.5 microns and less than or equal to 1 micron;
  • the organic layer coating process uses infrared heating when the substrate at the bottom of the substrate is heated, and the heating temperature is less than 100 degrees;
  • the heating amount of the edge region is greater than the heating amount of the central region when the substrate region of the substrate is heated.
  • the rheological properties of the inorganic layer can be controlled by adjusting the amount of heating and/or doping different auxiliary components, thereby improving the perforation condition of the inorganic layer, and also heating the edge and the central portion. Synchronization improves the interface characteristics of different regions, thereby precisely controlling the interface contact angle between the inorganic layer and the organic layer, thereby enhancing the controllability of diffusion of the IJP ink on the surface of the inorganic layer.
  • a thin film encapsulation structure includes:
  • An inorganic layer 602 and an organic layer 603 which are sequentially covered from the inside to the outside outside the electroluminescent unit structure 601;
  • the main component of the inorganic layer comprises: tin oxide SnOx; the organic layer is coated by inkjet printing IJP method;
  • the thin film encapsulation structure includes the following features:
  • the inorganic layer further comprises one or more of the following auxiliary components: tin fluoride SnF 2 , phosphorus pentoxide P 2 O 5 , tungsten trioxide WO 3 ;
  • the inorganic layer is deposited by sputtering
  • the inorganic layer has a thickness greater than or equal to 0.5 microns and less than or equal to 1 micron;
  • the organic layer is coated on the inorganic layer by an inkjet printing IJP method, and the substrate is heated at the bottom of the substrate during the coating process and the heating amount of different regions is different;
  • the heating amount of the edge region is greater than the heating amount of the central region when the substrate region of the substrate is heated
  • the organic layer coating process uses infrared heating when the substrate at the bottom of the substrate is heated, and the heating temperature is less than 100 degrees;
  • the rheological properties of the inorganic layer can be controlled by adjusting the amount of heating and/or doping different auxiliary components, thereby improving the perforation condition of the inorganic layer, and also heating the edge and the central portion. Synchronization improves the interface characteristics of different regions, thereby precisely controlling the interface contact angle between the inorganic layer and the organic layer, thereby enhancing the controllability of diffusion of the IJP ink on the surface of the inorganic layer.
  • a multi-layer stacked film package structure of an "inorganic layer-organic layer-inorganic layer" used in the embodiment of the present invention may include the following components in order from the inside to the outside:
  • Subatrate 10 optional glass or flexible substrate
  • an electroluminescent unit (Electroluminescent Unit, EL Unit for short) 20: completing the fabrication of the organic light-emitting unit by evaporation; the layer comprises an array of organic light-emitting units;
  • Capping layer 30 can be carried out by evaporation, preferably ultraviolet absorption of organic substances; this layer is mainly used to reduce the impact of plasma damage (plamsa damage) and ultraviolet (UV) light The effect on the electroluminescent unit;
  • a first inorganic layer (Inorganic Layer) 401 mainly deposited by sputtering method tin oxide SnOx;
  • tin fluoride SnF2 phosphorus pentoxide P 2 O 5
  • tungsten trioxide WO 3 may be added as needed, which can effectively improve rheological properties, water blocking and interface characteristics;
  • the inorganic layer is deposited to a thickness of 0.5 ⁇ m to 1 ⁇ m;
  • Organic layer 402 coating the organic layer by inkjet printing, mainly epoxy resin organic material; curing of the layer is preferably carried out in a "heating + visible light” manner;
  • the substrate is heated at the bottom of the substrate during the coating process and the heating amount of the different regions is different; for example, when the organic layer is coated by the inkjet printing IJP method, When the substrate area at the bottom of the substrate is heated, the heating amount of the edge region is greater than the heating amount of the central region;
  • infrared heating is adopted when heating the substrate at the bottom of the substrate, and the heating temperature is less than 100 degrees;
  • the rheological properties of the inorganic layer can be controlled by adjusting the amount of heating, and the pore condition of the inorganic layer can be improved, and the heating amount of the edge and the central portion can be synchronized, and the interface of different regions can be improved.
  • Characteristics By controlling the heating amount of the edge and the central portion, the interface angle of the inorganic layer and the organic layer can be precisely controlled, thereby enhancing the controllability of the diffusion of the inkjet printing ink on the surface of the inorganic layer.
  • a second inorganic layer (Inorganic Layer) 404 mainly by PECVD deposition of silicon nitride SiNx, silicon dioxide SiO 2 , silicon oxynitride SiON, aluminum oxide AlOx and other inorganic layers;
  • Barrier film 50 The layer is packaged and protected by a flexible material such as polyethylene terephthalate PET or polyethylene naphthalate phthalate PEN;

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Abstract

一种薄膜封装结构、薄膜封装方法及显示装置。薄膜封装结构包括：在电致发光单元结构（301）外部由内而外依次覆盖的无机层（302）、缓冲层（303）和有机层（304）；缓冲层（303）的成分是有机物，缓冲层（303）的厚度小于有机层（304）的厚度。薄膜封装方法包括：在包覆电致发光单元结构（301）的无机层（302）上覆盖缓冲层（303）；在缓冲层（303）的表面覆盖有机层（304）；缓冲层（303）的成分是有机物，缓冲层（303）的厚度小于有机层（304）的厚度。本技术方案能够改善多层堆叠的薄膜封装结构中有机层涂布的接触面特性，提高封装质量。

Description

一种薄膜封装结构、薄膜封装方法及显示装置
交叉引用
本申请要求于2017年3月21日提交的申请号为201710171082.X、名称为“一种薄膜封装结构、薄膜封装方法及显示装置”的中国专利申请的优先权，该中国专利申请的全部内容通过引用全部并入本公开。
技术领域
本发明涉及光电器件的封装技术，尤指一种薄膜封装结构、薄膜封装方法及显示装置。
背景技术
OLED(Organic Light-Emitting Diode，有机电致发光二极管)器件由于其具有全固态结构、高亮度、全视角、响应速度快、可柔性显示等一系列优点，已成为极具竞争力和发展前景的下一代显示技术。相较于LCD(Liquid Crystal Display，液晶显示器)显示技术，OLED显示中使用的有机发光材料对水氧气尤其敏感，为满足基本的使用寿命，通常对水、氧气的渗透率有很严格的要求，因此对OLED封装提出了更高要求。
发明内容
本公开提供了一种薄膜封装结构、薄膜封装方法及显示装置，能够改善多层堆叠的薄膜封装结构中有机层涂布的接触面特性，提高封装质量。
本发明实施例提供了一种薄膜封装结构，包括：
在电致发光单元结构外部由内而外依次覆盖的无机层、缓冲层和有机层；所述缓冲层的成分是有机物，所述缓冲层的厚度小于所述有机层的厚度。
在一种实施方式中，所述缓冲层的沉积采用化学气相沉积PECVD方式；
所述缓冲层的沉积与所述无机层的沉积同处一个工艺腔室。
在一种实施方式中，所述缓冲层的固化在化学气相沉积PECVD腔室中进行；或者在喷墨打印IJP工艺前处理腔室中进行；其中，所述有机层采用喷墨打印IJP方式进行沉积。
在一种实施方式中，所述缓冲层的固化通入等离子体；所述等离子体包括：含氧等离子体和/或含氟等离子体；
所述缓冲层的固化在不同区域通入的等离子体的浓度不同，或者在不同区域通入的等离子体的种类不同；
在一种实施方式中，所述缓冲层的固化在不同区域通入的等离子体的浓度不同，包括：所述缓冲层的边缘区域通入的等离子体的浓度低于中心区域通入的等离子体的浓度；
在一种实施方式中，所述缓冲层的固化在不同区域通入的等离子体的种类不同，包括：所述缓冲层的边缘区域通入含氟等离子体，中心区域通入含氧等离子体；
所述缓冲层的成分包括：六甲基二甲硅醚HMDSO。
在一种实施方式中，所述缓冲层的厚度是：0.1微米～0.3微米。
本发明实施例提供了一种薄膜封装方法，包括：
在包覆电致发光单元结构的无机层上覆盖缓冲层；
在所述缓冲层的表面覆盖有机层；
所述缓冲层的成分是有机物，所述缓冲层的厚度小于所述有机层的厚度。
在一种实施方式中，所述缓冲层的沉积采用化学气相沉积PECVD方式；
所述缓冲层的沉积与所述无机层的沉积同处一个工艺腔室。
在一种实施方式中，所述缓冲层的固化在化学气相沉积PECVD腔室中进行；或者在喷墨打印IJP工艺前处理腔室中进行；其中，所述有机层采用喷墨打印IJP方式进行沉积。
在一种实施方式中，所述缓冲层的固化通入等离子体；所述等离子体包括：含氧等离子体和/或含氟等离子体；
所述缓冲层的固化在不同区域通入的等离子体的浓度不同，或者在不同区域通入的等离子体的种类不同；
在一种实施方式中，所述缓冲层的固化在不同区域通入的等离子体的浓度不同，包括：所述缓冲层的边缘区域通入的等离子体的浓度低于中心区域通入的等离子体的浓度；
在一种实施方式中，所述缓冲层的固化在不同区域通入的等离子体的种类不同，包括：所述缓冲层的边缘区域通入含氟等离子体，中心区域通入含氧等离子体；
所述缓冲层的成分包括：六甲基二甲硅醚HMDSO。
在一种实施方式中，所述缓冲层的厚度是：0.1微米～0.3微米。
本发明实施例提供了一种显示装置，包括有机电致发光二极管OLED器件，所述OLED器件具有上述薄膜封装结构。
本发明实施例提供了一种薄膜封装结构，包括：
在电致发光单元结构外部由内而外依次覆盖的无机层和有机层；
所述无机层的主要成分包括：氧化锡SnOx；
所述有机层是采用喷墨打印IJP方式涂布的。
在一种实施方式中，所述无机层还包括以下一种或多种辅助成分：氟化锡SnF2、五氧化二磷P2O5、三氧化钨WO3。
在一种实施方式中，所述有机层在采用喷墨打印IJP方式进行涂布时，在基板底部载台区域加热且不同区域的加热量不同。
在一种实施方式中，所述有机层在采用喷墨打印IJP方式进行涂布时，在基板底部载台区域加热时，边缘区域的加热量大于中心区域的加热量。
本发明实施例还提供了一种薄膜封装方法，包括：
在电致发光单元结构外部沉积无机层，所述无机层的主要成分包括：氧化锡SnOx；
在所述无机层上采用喷墨打印IJP方式涂布有机层，涂布过程中在基板底部载台区域加热且不同区域的加热量不同。
在一种实施方式中，所述有机层在采用喷墨打印IJP方式进行涂布时，在基板底部载台区域加热时，边缘区域的加热量大于中心区域的加热量。
在一种实施方式中，所述无机层还包括以下一种或多种辅助成分：氟化锡SnF2、五氧化二磷P2O5、三氧化钨WO3。
本发明实施例提供了一种显示装置，包括有机电致发光二极管OLED器件，所述OLED器件具有上述薄膜封装结构。
与相关技术相比，本发明实施例公开的一种薄膜封装结构、薄膜封装方法及显示装置，在电致发光单元结构外部由内而外依次覆盖无机层、缓冲层和有机层，在具有有机层特性的薄缓冲层上涂布有机层，能够改善多层堆叠的薄膜封装结构中有机层涂布的接触面特性，提高封装质量。
本发明的其它特征和优点将在随后的说明书中阐述，并且，部分地从说明书中变得显而易见，或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
附图说明
附图用来提供对本发明技术方案的进一步理解，并且构成说明书的一部分，与本公开的实施例一起用于解释本发明的技术方案，并不构成对本发明技术方案的限制。
图1为现有技术中一种多层堆叠的薄膜封装结构示意图；
图2为本发明实施例一的一种薄膜封装方法的流程图；
图3为本发明实施例二的一种薄膜封装结构示意图；
图4为本发明示例1的一种薄膜封装结构示意图；
图5为本发明实施例三的一种薄膜封装方法的流程图；
图6为本发明实施例四的一种薄膜封装结构示意图；
图7为本发明示例2的一种薄膜封装结构示意图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚明白，下文中将结合附图对本发明的实施例进行详细说明。需要说明的是，在不冲突的情况下，本公开中的实施例及实施例中的特征可以相互任意组合。
在附图的流程图示出的步骤可以在诸如一组计算机可执行指令的计算机系统中执行。并且，虽然在流程图中示出了逻辑顺序，但是在某些情况下，可以以不同于此处的顺序执行所示出或描述的步骤。
薄膜封装技术的开发应用极大地满足了OLED封装性能的要求，如图1所示，一种多层堆叠的薄膜封装结构由内而外依次包括：1)基底(Subatrate)10，该层可用玻璃或柔性衬底；2)电致发光单元(Electroluminescent Unit，简称EL Unit)20，该层包括R、G、B三色像素阵列分布的有机发光单元；3)无机-有机交叠结构；4)阻挡层(Barrier film)40：该层采用柔性材料进行整个有机发光单元的封装保护。
目前，无机层/有机层/无机层的多层堆叠结构中，无机层的沉积主要采用化学气相沉积(Plasma Enhanced Chemical Vapor Deposition，简称PECVD)、原子层沉积(Atomic layer deposition，简称ALD)，从而能够达到高效的阻水阻氧要求。而有机层的沉积方式主要有：Vitex公司的Vitex高分子单体沉积法、PECVD方式实现杂化有机层，以及喷墨打印(Ink Jet Printing，简称IJP)方式。
其中，Vitex高分子单体沉积技术容易产生塞孔问题且设备维护成本较高，因此这一技术开发后并未被大面积推广；而PECVD沉积六甲基二甲硅醚HMDSO/碳氮化硅SiCN有机层技术存在着工艺不稳定、Mask cleaning(掩模清理)困难的问题。因此，IJP技术由于图案化无需掩模且工艺稳定性高，正越来越广泛地应用于无机层/有机层/无机层的多层堆叠的薄膜封装工艺中。
但是，由于无机层沉积(比如，PECVD)和有机层涂布(比如，IJP工艺)分别处于不同的环境，无机层沉积对应于高真空环境，有机层涂布时对应于氮气N2环境，因此导致有机层和无机层的接触面特性不一致，有机层喷墨涂布时在无机层表面出现墨水扩散不均匀、边缘不齐整、墨水流淌等现象，影响有机层的涂布效果，进而影响整个薄膜封装的质量。
为解决相关技术的问题，本公开提出以下的技术方案。
实施例一
如图2所示，一种薄膜封装方法，包括：
S210，在包覆电致发光单元结构的无机层上覆盖缓冲层；
S220，在所述缓冲层的表面覆盖有机层；
所述缓冲层的成分是有机物，所述缓冲层的厚度小于所述有机层的厚度；
所述方法还可以包括下述特点：
在一种实施方式中，所述缓冲层的厚度t满足以下条件：t大于或等于0.1微米且小于或等于0.3微米；
在一种实施方式中，所述缓冲层的成分包括：六甲基二甲硅醚HMDSO；
其中，薄的缓冲层相比常规厚有机层，沉积时间更短，从而有利于缩小有机层和无机层界面的差异性；另一方面，在无机层的表面沉积薄的缓冲层，相较于沉积常规厚有机层，更利于掩模清理；
在一种实施方式中，所述缓冲层的沉积采用化学气相沉积PECVD方式；
在一种实施方式中，所述缓冲层的沉积与所述无机层的沉积可以同处一个工艺腔室，采用一个工艺流程，这样能够减少基板传输对位时间，工艺连续，中间界面无不良缺陷，能够得到更优薄膜；
在一种实施方式中，所述缓冲层的固化在化学气相沉积PECVD腔室中进行，或者在喷墨打印IJP工艺前处理腔室中进行，其中，所述有机层采用喷墨打印IJP方式进行沉积；
考虑到有机层与缓冲层工艺时间间隔，且接触角特性会随时间而变化，可根据产线设备状况，若时间间隔短，缓冲层的固化可置于PECVD腔室中；若时间间隔长，缓冲层的固化可置于IJP工艺前处理腔室中，确保良好的接触角特性。
在一种实施方式中，所述缓冲层的固化通入等离子体；所述等离子体包括：含氧等离子体和/或含氟等离子体；
在一种实施方式中，所述缓冲层的固化在不同区域通入的等离子体的浓度不同，或者在不同区域通入的等离子体的种类不同；
在一种实施方式中，所述缓冲层的固化在中心区域通入含氧等离子体，在边缘区域通入含氟等离子体；
在一种实施方式中，所述缓冲层的固化在不同区域通入的等离子体的浓度不同，包括：所述缓冲层的边缘区域通入的等离子体的浓度低于中心区域通入的等离子体的浓度；
在一种实施方式中，所述有机层采用喷墨打印IJP方式在所述缓冲层表面进行涂布；
其中，在缓冲层固化时通过引入等离子体(含氧等离子体或含氟等离子体)，能够精确地控制界面特性；可采用分区域(边缘四周、中心部位)进行强度不等的等离子固化，改善墨水的边缘流淌情况。
实施例二
如图3所示，一种薄膜封装结构，包括：
在电致发光单元结构301外部由内而外依次覆盖的无机层302、缓冲层303和有机层304；
所述缓冲层的成分是有机物，所述缓冲层的厚度小于所述有机层的厚度；
所述薄膜封装结构还可以包括下述特点：
在一种实施方式中，所述缓冲层的厚度t满足以下条件：t大于或等于0.1微米且 小于或等于0.3微米；
在一种实施方式中，所述缓冲层的成分包括：六甲基二甲硅醚HMDSO；
其中，薄的缓冲层相比常规厚有机层，沉积时间更短，从而有利于缩小有机层和无机层界面的差异性；另一方面，在无机层的表面沉积薄的缓冲层，相较于沉积常规厚有机层，更利于掩模清理；
在一种实施方式中，所述缓冲层的沉积采用化学气相沉积PECVD方式；
在一种实施方式中，所述缓冲层的沉积与所述无机层的沉积可以同处一个工艺腔室，采用一个工艺流程，这样能够减少基板传输对位时间，工艺连续，中间界面无不良缺陷，能够得到更优薄膜；
在一种实施方式中，所述缓冲层的固化在化学气相沉积PECVD腔室中进行，或者在喷墨打印IJP工艺前处理腔室中进行，其中，所述有机层采用喷墨打印IJP方式进行沉积；
考虑到有机层与缓冲层工艺时间间隔，且接触角特性会随时间而变化，可根据产线设备状况，若时间间隔短，缓冲层的固化可置于PECVD腔室中；若时间间隔长，缓冲层的固化可置于IJP工艺前处理腔室中，确保良好的接触角特性。
在一种实施方式中，所述缓冲层的固化通入等离子体；所述等离子体包括：含氧等离子体和/或含氟等离子体；
在一种实施方式中，所述缓冲层的固化在不同区域通入的等离子体的浓度不同，或者在不同区域通入的等离子体的种类不同；
在一种实施方式中，所述缓冲层的固化在中心区域通入含氧等离子体，在边缘区域通入含氟等离子体；
在一种实施方式中，所述缓冲层的固化在不同区域通入的等离子体的浓度不同，包括：所述缓冲层的边缘区域通入的等离子体的浓度低于中心区域通入的等离子体的浓度；
在一种实施方式中，所述有机层采用喷墨打印IJP方式在所述缓冲层表面进行涂布；
其中，在缓冲层固化时通过引入等离子体(含氧等离子体或含氟等离子体)，能够精确地控制界面特性；可采用分区域(边缘四周、中心部位)进行强度不等的等离子固化，改善墨水的边缘流淌情况。
示例1
如图4所示，本示例采用的一种“无机层-缓冲有机层-有机层”的多层堆叠薄膜封装结构，按照由内到外的封装顺序，依次可以包括下述组成部分：
1)基底(Subatrate)10:可选用玻璃或柔性衬底；
2)电致发光单元(Electroluminescent Unit，简称EL Unit)20：通过蒸镀方式完成有机发光单元的制作；该层包括R、G、B三色像素阵列分布的有机发光单元；
3)覆盖层(Capping Layer)30:可采用蒸镀方式进行，优选紫外吸收的有机物质；该层主要用于减弱薄膜封装层等离子损伤(plamsa damage)的影响及紫外线(ultraviolet，简称UV)光对电致发光单元的影响；
4)第一无机层(Inorganic Layer)401:主要采用PECVD方式沉积氮化硅SiNx、二氧化硅SiO2、氮氧化硅SiON、氧化铝AlOx等无机层；
5)缓冲有机层(Buffer layer)402：采用PECVD方式沉积薄有机层；
其中，所述缓冲层的厚度范围是：0.1微米～0.3微米；薄的缓冲层相比常规厚有机层，沉积时间更短，从而有利于缩小有机层和无机层界面的差异性；另一方面，在无机层的表面沉积薄的缓冲层，相较于沉积常规厚有机层，更利于掩模清理；
其中，所述缓冲层的沉积采用化学气相沉积PECVD方式；缓冲层与无机层的沉积可以同处一个工艺腔室，采用一个工艺流程，这样能够减少基板传输对位时间，工艺连续，中间界面无不良缺陷，能够得到更优薄膜；
其中，缓冲层的材料优选等离子体聚合pp-六甲基二甲硅醚HMDSO；
可以通入等离子体(比如，含氧等离子体、含氟等离子体)进行缓冲层的固化，以实现薄膜表面特性的精确及时控制；该处理工艺可置于PECVD腔室中进行完成，也可置于IJP工艺前处理腔室进行；考虑到有机层与缓冲有机层工艺时间间隔，且接触角特性会随时间而变化。可根据产线设备状况，若时间间隔短，缓冲层的固化可置于PECVD腔室中；若时间间隔长，缓冲层的固化可置于IJP工艺前处理腔室中，确保良好的接触角特性。
为更好地控制IJP墨水边缘不齐整、流淌等现象，可以在缓冲层固化时分区进行浓度不等的等离子固化；比如，所述缓冲层的边缘区域通入的等离子体的浓度低于中心区域通入的等离子体的浓度。或者，可以在缓冲层固化时分区通入不同的等离子体；比如，所述缓冲层的固化在中心区域通入含氧等离子体，在边缘区域通入含氟等离子体。
6)有机层(Organic Layer)403:通过喷墨打印方式实现有机层的涂布，主要为环氧树脂类有机材料；该层的固化优选“加热+可见光”方式进行；
7)第二无机层(Inorganic Layer)404:主要采用PECVD方式沉积氮化硅SiNx、二氧化硅SiO2、氮氧化硅SiON、氧化铝AlOx等无机层；
8)阻挡层(Barrier film)50：该层采用聚对苯二甲酸乙二酸酯PET、聚萘二甲酸乙二酸酯PEN等柔性材料进行整个有机发光单元的封装保护；
实施例三
如图5所示，一种薄膜封装方法，包括：
S510，在电致发光单元结构外部沉积无机层，所述无机层的主要成分包括：氧化锡SnOx；
S520，在所述无机层上采用喷墨打印IJP方式涂布有机层，涂布过程中在基板底 部载台区域加热且不同区域的加热量不同；
所述方法还可以包括下述特点：
在一种实施方式中，所述无机层还包括以下一种或多种辅助成分：氟化锡SnF2、五氧化二磷P2O5、三氧化钨WO3；
在一种实施方式中，在电致发光单元结构外部沉积无机层，包括：采用溅镀的方式沉积无机层；
在一种实施方式中，所述无机层的厚度大于或等于0.5微米且小于或等于1微米；
在一种实施方式中，有机层涂布过程中在基板底部载台区域加热时采用红外加热的方式，加热温度小于100度；
在一种实施方式中，所述有机层在采用喷墨打印IJP方式进行涂布时，在基板底部载台区域加热时，边缘区域的加热量大于中心区域的加热量。
采用SnO类无机层，可通过调控加热量的多少和/或掺杂不同的辅助成分，调控无机层的流变特性，改善自身的过孔状况，同时也可对边缘及中心部分加热量的不同步，改善不同区域的界面特性，从而对无机层和有机层界面接触角进行精确的控制，进而增强IJP墨水在无机层表面的扩散可控性。
实施例四
如图6所示，一种薄膜封装结构，包括：
在电致发光单元结构601外部由内而外依次覆盖的无机层602和有机层603；
所述无机层的主要成分包括：氧化锡SnOx；所述有机层是采用喷墨打印IJP方式涂布的；
所述薄膜封装结构包括下述特点：
在一种实施方式中，所述无机层还包括以下一种或多种辅助成分：氟化锡SnF2、五氧化二磷P2O5、三氧化钨WO3；
在一种实施方式中，所述无机层采用溅镀的方式进行沉积；
在一种实施方式中，所述无机层的厚度大于或等于0.5微米且小于或等于1微米；
在一种实施方式中，在所述无机层上采用喷墨打印IJP方式涂布有机层，涂布过程中在基板底部载台区域加热且不同区域的加热量不同；
在一种实施方式中，所述有机层在采用喷墨打印IJP方式进行涂布时，在基板底部载台区域加热时，边缘区域的加热量大于中心区域的加热量；
在一种实施方式中，有机层涂布过程中在基板底部载台区域加热时采用红外加热的方式，加热温度小于100度；
采用SnO类无机层，可通过调控加热量的多少和/或掺杂不同的辅助成分，调控无机层的流变特性，改善自身的过孔状况，同时也可对边缘及中心部分加热量的不同步，改善不同区域的界面特性，从而对无机层和有机层界面接触角进行精确的控制，进而增强IJP墨水在无机层表面的扩散可控性。
示例2
如图7所示，本发明实施例采用的一种“无机层-有机层-无机层”的多层堆叠薄膜封装结构，按照由内到外的封装顺序，依次可以包括下述组成部分：
1)基底(Subatrate)10:可选用玻璃或柔性衬底；
2)电致发光单元(Electroluminescent Unit，简称EL Unit)20：通过蒸镀方式完成有机发光单元的制作；该层包括阵列分布的有机发光单元；
3)覆盖层(Capping Layer)30:可采用蒸镀方式进行，优选紫外吸收的有机物质；该层主要用于减弱薄膜封装层等离子损伤(plamsa damage)的影响及紫外线(ultraviolet，简称UV)光对电致发光单元的影响；
4)第一无机层(Inorganic Layer)401:主要采用溅镀方式沉积氧化锡SnOx；
其中，可根据需要增加氟化锡SnF2、五氧化二磷P2O5、三氧化钨WO3等组分中的一种或多种，能够有效地改善流变特性、阻水及界面特性；无机层的沉积厚度为0.5微米～1微米；
5)有机层(Organic Layer)402:通过喷墨打印方式实现有机层的涂布，主要为环氧树脂类有机材料；该层的固化优选“加热+可见光”方式进行；
采用喷墨打印IJP方式涂布有机层时，涂布过程中在基板底部载台区域加热且不同区域的加热量不同；比如，所述有机层在采用喷墨打印IJP方式进行涂布时，在基板底部载台区域加热时，边缘区域的加热量大于中心区域的加热量；
有机层涂布过程中在基板底部载台区域加热时采用红外加热的方式，加热温度小于100度；
采用氧化锡SnOx类无机层，可通过调控加热量的多少，调控无机层的流变特性，改善自身的过孔状况，同时也可对边缘及中心部分加热量的不同步，改善不同区域的界面特性；通过对边缘及中心部分加热量的调控，可对无机层和有机层界面接触角进行精确的控制，进而增强喷墨打印墨水在无机层表面的扩散可控性。
6)第二无机层(Inorganic Layer)404:主要采用PECVD方式沉积氮化硅SiNx、二氧化硅SiO2、氮氧化硅SiON、氧化铝AlOx等无机层；
7)阻挡层(Barrier film)50：该层采用聚对苯二甲酸乙二酸酯PET、聚萘二甲酸乙二酸酯PEN等柔性材料进行整个有机发光单元的封装保护；
虽然本发明所揭露的实施方式如上，但所述的内容仅为便于理解本发明而采用的实施方式，并非用以限定本发明。任何本发明所属领域内的技术人员，在不脱离本发明所揭露的精神和范围的前提下，可以在实施的形式及细节上进行任何的修改与变化，但本发明的专利保护范围，仍须以所附的权利要求书所界定的范围为准。

Claims (16)

  1. 一种薄膜封装结构，其中，包括：
    在电致发光单元结构外部由内而外依次覆盖的无机层、缓冲层和有机层；所述缓冲层的成分是有机物，所述缓冲层的厚度小于所述有机层的厚度。
  2. 根据权利要求1所述的薄膜封装结构，其中：
    所述缓冲层的沉积采用化学气相沉积PECVD方式；
    所述缓冲层的沉积与所述无机层的沉积同处一个工艺腔室；
    所述缓冲层的固化在化学气相沉积PECVD腔室中进行；或者在喷墨打印IJP工艺前处理腔室中进行；其中，所述有机层采用喷墨打印IJP方式进行沉积。
  3. 根据权利要求1或2所述的薄膜封装结构，其中：
    所述缓冲层的固化通入等离子体；所述等离子体包括：含氧等离子体和/或含氟等离子体；
    所述缓冲层的固化在不同区域通入的等离子体的浓度不同，或者在不同区域通入的等离子体的种类不同；
    所述缓冲层的成分包括：六甲基二甲硅醚HMDSO。
  4. 根据权利要求1或2所述的薄膜封装结构，其中：
    所述缓冲层的厚度是：0.1微米～0.3微米。
  5. 一种薄膜封装方法，包括：
    在包覆电致发光单元结构的无机层上覆盖缓冲层；
    在所述缓冲层的表面覆盖有机层；
    所述缓冲层的成分是有机物，所述缓冲层的厚度小于所述有机层的厚度。
  6. 根据权利要求5所述的薄膜封装方法，其中：
    所述缓冲层的沉积采用化学气相沉积PECVD方式；
    所述缓冲层的沉积与所述无机层的沉积同处一个工艺腔室；
    所述缓冲层的固化在化学气相沉积PECVD腔室中进行；或者在喷墨打印IJP工艺前处理腔室中进行；其中，所述有机层采用喷墨打印IJP方式进行沉积。
  7. 根据权利要求5或6所述的薄膜封装方法，其中：
    所述缓冲层的固化通入等离子体；所述等离子体包括：含氧等离子体和/或含氟等离子体；
    所述缓冲层的固化在不同区域通入的等离子体的浓度不同，或者在不同区域通入的等离子体的种类不同；
    所述缓冲层的成分包括：六甲基二甲硅醚HMDSO。
  8. 根据权利要求5或6所述的薄膜封装结构，其中：
    所述缓冲层的厚度是：0.1微米～0.3微米。
  9. 一种显示装置，其中，包括有机电致发光二极管OLED器件，所述OLED器件具有 如权利要求1-4中任一项所述的薄膜封装结构。
  10. 一种薄膜封装结构，其中，包括：
    在电致发光单元结构外部由内而外依次覆盖的无机层和有机层；
    所述无机层的主要成分包括：氧化锡SnOx；
    所述有机层是采用喷墨打印IJP方式涂布的。
  11. 根据权利要求10所述的薄膜封装结构，其中：
    所述无机层还包括以下一种或多种辅助成分：氟化锡SnF2、五氧化二磷P2O5、三氧化钨WO3。
  12. 根据权利要求10或11所述的薄膜封装结构，其中：
    所述有机层在采用喷墨打印IJP方式进行涂布时，在基板底部载台区域加热且不同区域的加热量不同。
  13. 根据权利要求10或11所述的薄膜封装结构，其中：
    所述无机层的厚度大于或等于0.5微米且小于或等于1微米。
  14. 一种薄膜封装方法，包括：
    在电致发光单元结构外部沉积无机层，所述无机层的主要成分包括：氧化锡SnOx；
    在所述无机层上采用喷墨打印IJP方式涂布有机层，涂布过程中在基板底部载台区域加热且不同区域的加热量不同。
  15. 根据权利要求14所述的薄膜封装方法，其中：
    所述无机层还包括以下一种或多种辅助成分：氟化锡SnF2、五氧化二磷P2O5、三氧化钨WO3。
  16. 一种显示装置，其中，包括有机电致发光二极管OLED器件，所述OLED器件具有如权利要求10-13中任一项所述的薄膜封装结构。
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