WO2018170995A1 - 阵列基板及其制造方法、液晶显示面板及液晶显示装置 - Google Patents

阵列基板及其制造方法、液晶显示面板及液晶显示装置 Download PDF

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WO2018170995A1
WO2018170995A1 PCT/CN2017/081531 CN2017081531W WO2018170995A1 WO 2018170995 A1 WO2018170995 A1 WO 2018170995A1 CN 2017081531 W CN2017081531 W CN 2017081531W WO 2018170995 A1 WO2018170995 A1 WO 2018170995A1
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array substrate
opening
common electrode
insulating layer
data line
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French (fr)
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徐向阳
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US15/536,791 priority Critical patent/US10451929B2/en
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133553—Reflecting elements
    • G02F1/133555—Transflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136218—Shield electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate

Definitions

  • the present invention relates to the field of touch screen technologies, and in particular, to an array substrate and a method for fabricating the same, a liquid crystal display panel, and a liquid crystal display device.
  • a trans-flective liquid crystal display device has both transmissive and reflective characteristics.
  • the transflective liquid crystal panel includes a transmissive region with a transparent electrode and a reflective region with a reflective layer in one pixel domain. .
  • the transmission area and the backlight of the pixel area can be used to display the image, and the reflection area of the pixel area and the external light can be used to display the image in a bright place. Therefore, the transflective liquid crystal display device can be widely applied to adapt to different bright and dark environments.
  • the invention provides a transflective array substrate and a liquid crystal display panel which can adapt to different bright and dark environments.
  • the invention also provides an array substrate manufacturing method and a liquid crystal display device.
  • the array substrate provided by the present application includes a substrate, a gate, a gate insulating layer, an active layer, a source and a drain, a data line, an organic insulating layer, a pixel electrode, and a common electrode, wherein the pixel electrode corresponds to the data line
  • the locations are each provided with an opening, the data line having a reflective effect and forming a reflective area for reflecting light entering through the opening through the common electrode layer.
  • the width of the opening is smaller than the width of the data line. That is to say, the data line is partially projected on the organic insulating layer and partially overlaps the pixel electrodes on both sides of the opening to prevent light leakage from affecting the pixel.
  • the layer where the pixel electrode is located and the layer where the common electrode is located are stacked and passed through the insulating layer Intervals, and the width of the orthographic projection of the opening on the corresponding common electrode is less than the width of the common electrode for light to pass and to prevent light leakage.
  • the width of the common electrode corresponding to the opening is the same as the width of the data line corresponding to the opening.
  • the array substrate includes a transmissive region spaced apart from the reflective region.
  • the opening is formed in the same step as the pixel electrode.
  • the common electrode has a structure with a slit, and the common electrode corresponding to the opening has a gap.
  • the present application provides a liquid crystal display panel, including a color filter substrate, the array substrate, and a liquid crystal layer sandwiched between the color filter substrate and the array substrate, the color film substrate corresponding to the opening The location does not have a black matrix.
  • the method for fabricating an array substrate includes sequentially forming a pixel electrode, an insulating layer, and a common electrode on an organic insulating layer of a substrate, wherein the pixel electrode includes an opening corresponding to a data line under the organic insulating layer on the substrate, and Both sides of the common electrode corresponding to the opening are slits.
  • the present application provides a liquid crystal display device including the liquid crystal display panel and a backlight module.
  • the liquid crystal display panel described in the present application can display a portrait in a dark place by using a transmissive area of a pixel area and a backlight, and display a portrait in a bright place by using a reflection area of the pixel area and external light to realize a transflective liquid crystal display. .
  • FIG. 1 is a schematic view of a liquid crystal display panel of the present invention.
  • FIG. 2 is a schematic cross-sectional view of the array substrate shown in FIG. 1.
  • FIG. 3 is a flow chart of a method of manufacturing an array substrate according to the present invention.
  • the liquid crystal display panel includes a color filter substrate 20 , the array substrate 10 , and a liquid crystal layer 30 between the color filter substrate 20 and the array substrate 10 .
  • the array substrate 10 in the convex 1 is a schematic view, and the specific structure is referred to FIG.
  • the array substrate 10 includes a substrate 11, a gate electrode 12, a gate insulating layer 13, an active layer 14, a source and a drain 15, a data line 16, an organic insulating layer 17, a pixel electrode 18, and a common electrode. 19.
  • the data line 16 has a reflection effect and forms a reflective area A for reflecting light entering through the pixel electrode 18 entering by the common electrode layer 19.
  • the substrate 11 is a glass plate.
  • a gate electrode 12 is formed on a surface of the substrate 11.
  • the gate insulating layer 13 covers the surface of the substrate 11 and the gate electrode 12.
  • the active layer 14 is formed on the gate insulating layer 13.
  • the source and the drain are formed on the active layer 14 and spaced apart, and the source and drain electrodes 15 form a trench with the active layer 14. Road.
  • the data line 16 is formed simultaneously with the active layer 14 and the source and drain electrodes 15 and is located in the same layer.
  • the active layer 14, the source and drain electrodes 15, and the data line 16 are covered with a first insulating layer 160.
  • the organic insulating layer 17 is laminated on the first insulating layer 160.
  • the pixel electrode 18, the insulating layer 180, and the common electrode 19 are sequentially laminated on the organic insulating layer 17.
  • the pixel electrode 18 is connected to the source or the drain through a via hole penetrating the first insulating layer 160 and the insulating layer 17.
  • the pixel electrode 18 is provided with an opening 181 at a position corresponding to the data line 16 , and the width of the opening 181 is smaller than the width of the data line 16 . That is to say, the data line 16 is orthographically projected on the organic insulating layer 17 and partially overlaps the pixel electrodes 18 on both sides of the opening to prevent light leakage from affecting the pixel.
  • the layer where the pixel electrode 18 is located is stacked with the layer where the common electrode 19 is located and is spaced by the insulating layer 180, and the width of the orthographic projection of the opening 181 on the corresponding common electrode 191 is smaller than the width of the common electrode 19, so that Light enters the reflecting surface of the data line 16 through the opening 181.
  • the reflective area A is a portion of the reflective surface of the data line 16 to the common electrode 19.
  • the width of the common electrode 19 corresponding to the opening 181 is the same as the width of the data line 16 corresponding to the opening 181.
  • the array substrate 10 includes a transmissive region (not labeled) spaced apart from the reflective region A.
  • the opening 181 is formed in the same step as the pixel electrode 18.
  • the common electrode 19 is a structure having a slit, and a common electric power opposite to each of the openings 181
  • the two sides of the pole 19 are slits so that light enters the reflection zone.
  • the present application further provides a method for fabricating the array substrate, which comprises, in step S1, an organic insulating layer 17 on a substrate 11.
  • step S2 the pixel electrode 18, the insulating layer 180 and the common electrode 19 are sequentially formed on the organic insulating layer 17 of the substrate 11, wherein the pixel electrode 18 includes an opening 181 corresponding to the data line 16 under the organic insulating layer 17 on the substrate 11. And the common electrode 19 corresponding to the opening 181 is a slit on both sides.
  • the step S1 includes forming a first metal layer formed on the substrate 11, and patterning the first metal layer to form the gate electrode 12.
  • a gate insulating layer 13 is deposited on the surfaces of the gate electrode 12 and the substrate 11.
  • the material of the gate insulating layer 13 is selected from one of silicon oxide, a silicon nitride layer, a silicon oxynitride layer, and a combination thereof.
  • a semiconductor layer and a second metal layer are sequentially formed on the gate insulating layer 13, and the semiconductor layer and the second metal layer are patterned to form the active layer 14, the source and drain electrodes 15, and the source and drain electrodes, respectively.
  • a data line 16 having a reflective function is provided at intervals.
  • the material of the second metal layer is selected from one of copper, tungsten, chromium, aluminum, and combinations thereof. Wherein the semiconductor layer is used to form a channel that is turned on or off between the source and the drain.
  • the patterning process comprises forming a gate line 12, an active layer 14, and a source as shown in FIG. 1 by a patterning process such as exposure, development, metal wet etching, etching, burnt resistance, and lift-off through a gray tone mask. Drain 15, data line 16.
  • the formation also includes forming the organic insulating layer 17, the first insulating layer 13, the insulating layer 180, the pixel electrode 18, and the common electrode 19 by depositing a base layer, performing exposure, development, and etching using a mask.
  • the position of the color filter substrate 20 of the liquid crystal display panel of the present application corresponding to the opening 181 is not provided with a black matrix for light to enter, and the processing process and the thickness of the color filter substrate are saved.
  • the liquid crystal display panel described in the present application can display a portrait in a dark place by using a transmissive area of a pixel area and a backlight, and display a portrait in a bright place by using a reflection area of the pixel area and external light to realize a transflective liquid crystal display. .
  • the present application further provides a liquid crystal display device including the liquid crystal display panel and a backlight module.
  • the liquid crystal display panel is stacked on the backlight module to provide a light source through the backlight module.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Liquid Crystal (AREA)

Abstract

一种阵列基板（10），包括基板（11）、栅极（12）、栅极绝缘层（13）、有源层（14）、源漏极（15）、数据线（16），有机绝缘层（17）、像素电极（18）及公共电极（19），像素电极（18）与数据线（16）对应的位置均设有开口（181），数据线（16）具有反射作用并形成反射区，用于反射由公共电极（19）进入的通过开口（181）的光线。

Description

阵列基板及其制造方法、液晶显示面板及液晶显示装置
本发明要求2017年3月20日递交的发明名称为“阵列基板及其制造方法、液晶显示面板及液晶显示装置”的申请号201710171629.6的在先申请优先权，上述在先申请的内容以引入的方式并入本文本中。
技术领域
本发明涉及触摸屏技术领域，尤其涉及一种阵列基板及其制造方法、液晶显示面板及液晶显示装置。
背景技术
半透半反式液晶显示装置(Trans-flective Liquid Crystal Display)同时具有透射式和反射式特性，半透半反式液晶面板在一个像素域内包括有透明电极的透射区和有反射层的反射区。在黑暗的地方可以利用像素区域的透射区和背光源来显示画像，在明亮的地方利用像素区域的反射区和外光来显示画像。因此，半透半反式液晶显示装置可以适应不同的亮暗环境而得到广泛应用。
发明内容
本发明提供一种可以适应不同的亮暗环境的半透半反式阵列基板及液晶显示面板。
本发明还提供一种阵列基板制造方法及液晶显示装置。
本申请提供的阵列基板，包括基板、栅极、栅极绝缘层、有源层、源漏极、数据线，有机绝缘层、像素电极及公共电极，所述像素电极与所述数据线对应的位置均设有开口，所述数据线具有反射作用并形成反射区，用于反射由公共电极层进入的通过开口的光线。
其中，所述开口的宽度小于所述数据线的宽度。也就是说与所述数据线在有机绝缘层上正投影与开口两侧的像素电极有部分重叠，避免发生漏光影响像素。
其中，所述像素电极所在层与所述公共电极所在层层叠设置并通过绝缘层 间隔，并且所述开口在对应的公共电极上的正投影的宽度小于该公共电极的宽度，以便光的通过并防止漏光。
其中，与所述开口对应的公共电极的宽度与该开口对应的数据线的宽度相同。
其中，所述阵列基板包括与所述反射区间隔设置的透射区。
其中，所述开口与所述像素电极同一步骤形成。
其中，所述公共电极为具有缝隙的结构，与所述开口相对应的公共电极两个均有缝隙。
本申请提供一种液晶显示面板，包括彩膜基板、所述的阵列基板以及夹持于所述彩膜基板与阵列基板之间的液晶层，所述彩膜基板上与所述开口相对应的位置未设有黑矩阵。
本申请提供的阵列基板制造方法，包括，在基底的有机绝缘层上依次形成像素电极、绝缘层及公共电极，其中像素电极包括与基底上的有机绝缘层下的数据线对应的开口，并且所述开口对应的公共电极两侧为缝隙。
本申请提供一种液晶显示装置，包括所述的液晶显示面板及背光模组。
本申请所述的液晶显示面板在黑暗的地方可以利用像素区域的透射区和背光源来显示画像，在明亮的地方利用像素区域的反射区和外光来显示画像，实现半透半反射液晶显示。
附图说明
为更清楚地阐述本发明的构造特征和功效，下面结合附图与具体实施例来对其进行详细说明。
图1是本发明液晶显示面板示意图。
图2是图1所示的阵列基板的截面示意图。
图3是本发明所述阵列基板制造方法流程图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。其中，附图仅用于示例性说明，表示的仅是示意图，不能理 解为对本专利的限制。
请参阅图1，本发明提供一种阵列基板10及液晶显示面板，其中，液晶显示面板包括彩膜基板20、所述阵列基板10及位于彩膜基板20与阵列基板10之间的液晶层30。其中凸1中阵列基板10为示意图，具体结构参照图2。
如图2所示，所述阵列基板10包括基板11、栅极12、栅极绝缘层13、有源层14、源漏极15、数据线16，有机绝缘层17、像素电极18及公共电极19。所述数据线16具有反射作用并形成反射区A，用于反射由公共电极层19进入的通过像素电极18的光线。
所述基板11为玻璃板。栅极12形成于所述基板11表面。所述栅极绝缘层13覆盖所述基板11表面及栅极12。所述有源层14形成于所述栅极绝缘层13上，所述源极及漏极形成于所述有源层14上并间隔设置，源漏极15与所述有源层14构成沟道。所述数据线16与所述有源层14及源漏极15同时形成并位于同一层。所述有源层14、源漏极15、数据线16上覆盖第一绝缘层160。有机绝缘层17层叠于所述第一绝缘层160上。所述像素电极18、绝缘层180及公共电极19依次层叠于所述有机绝缘层17上。所述像素电极18通过贯穿所述第一绝缘层160及机绝缘层17的通孔连接源极或者漏极。
进一步的，所述像素电极18与所述数据线16对应的位置设有开口181，所述开口181的宽度小于所述数据线16的宽度。也就是说与所述数据线16在有机绝缘层17上正投影与开口两侧的像素电极18有部分重叠，避免发生漏光影响像素。
所述像素电极18所在层与所述公共电极19所在层层叠设置并通过绝缘层180间隔，并且所述开口181在对应的公共电极191上的正投影的宽度小于该公共电极19的宽度，以便光线通过开口181射入所述数据线16的反射面。本实施例中，所述反射区A为所述数据线16的反射面到公共电极19的部分。
进一步的，与所述开口181对应的公共电极19的宽度与该开口181对应的数据线16的宽度相同。
所述阵列基板10包括与所述反射区A间隔设置的透射区(图未标)。所述开口181与所述像素电极18同一步骤形成。
所述公共电极19为具有缝隙的结构，与每一所述开口181相对的公共电 极19两边为缝隙，以便光线进入反射区。
请参阅图3，本申请还提供一种所述阵列基板制造方法，该方法包括，步骤S1，在基底11的有机绝缘层17。
步骤S2，在基底11的有机绝缘层17上依次形成像素电极18、绝缘层180及公共电极19，其中像素电极18包括与基底11上的有机绝缘层17下的数据线16对应的开口181，并且所述开口181对应的公共电极19两侧为缝隙。
具体的，所述步骤S1包括在基底11上形成形成第一金属层，图案化所述第一金属层形成所述栅极12。
在所述栅极12及所述基板11的表面上沉积栅极绝缘层13。所述栅极绝缘层13的材质选择氧化硅、氮化硅层，氮氧化硅层及其组合的其中之一。
在所述栅极绝缘层13上依次形成半导体层及第二金属层，图案化所述半导体层及第二金属层分别形成所述有源层14、源漏极15以及与所述源漏极间隔设置的具有反射功能的数据线16。所述第二金属层的材质选自铜、钨、铬、铝及其组合的其中之一。其中所述半导体层用于形成所述源极和漏极之间导通或者断开的沟道。
其中，图案化工艺包括通过灰色调掩模板进行曝光、显影、金属湿刻、蚀刻、烧光阻和剥离的等构图成膜工艺形成如图1所示的栅线12、有源层14、源漏极15、数据线16。同样包括通过沉积基础层、使用掩模板进行曝光、显影、蚀刻形成有机绝缘层17、第一绝缘13、绝缘层180、像素电极18及公共电极19。
本申请所述的液晶显示面板的彩膜基板20上与所述开口181相对应的位置未设有黑矩阵，以便光线进入，同时节省加工工艺及彩膜基板厚度。本申请所述的液晶显示面板在黑暗的地方可以利用像素区域的透射区和背光源来显示画像，在明亮的地方利用像素区域的反射区和外光来显示画像，实现半透半反射液晶显示。
本申请还提供一种液晶显示装置，其包括所述的液晶显示面板及背光模组，所述液晶显示面板层叠于所述背光模组上，通过背光模组提供光源。
以上所述是本发明的优选实施例，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些 改进和润饰也视为本发明的保护范围。

Claims (16)

  1. 一种阵列基板，包括基板、栅极、栅极绝缘层、有源层、源漏极、数据线，有机绝缘层、像素电极及公共电极，其中，所述像素电极与所述数据线对应的位置均设有开口，所述数据线具有反射作用并形成反射区，用于反射由公共电极层进入的通过开口的光线。
  2. 如权利要求1所述的阵列基板，其中，所述开口的宽度小于所述数据线的宽度。
  3. 如权利要求2所述的阵列基板，其中，所述像素电极所在层与所述公共电极所在层层叠设置并通过绝缘层间隔，并且所述开口在对应的公共电极上的正投影的宽度小于该公共电极的宽度。
  4. 如权利要求3所述的阵列基板，其中，与所述开口对应的公共电极的宽度与该开口对应的数据线的宽度相同。
  5. 如权利要求4所述的阵列基板，其中，所述阵列基板包括与所述反射区间隔设置的透射区。
  6. 如权利要求1所述的阵列基板，其中，所述开口与所述像素电极同一步骤形成。
  7. 如权利要求1所述的阵列基板，其中，所述公共电极为具有缝隙的结构，与所述开口相对应的公共电极两个均有缝隙。
  8. 一种液晶显示面板，其中，包括彩膜基板、阵列基板以及夹持于所述彩膜基板与阵列基板之间的液晶层，所述彩膜基板上与所述开口相对应的位置未设有黑矩阵，所述阵列基板包括基板、栅极、栅极绝缘层、有源层、源漏极、数据线，有机绝缘层、像素电极及公共电极，其中，所述像素电极与所述数据线对应的位置均设有开口，所述数据线具有反射作用并形成反射区，用于反射由公共电极层进入的通过开口的光线。
  9. 如权利要求8所述的阵列基板，其中，所述开口的宽度小于所述数据线的宽度。
  10. 如权利要求9所述的阵列基板，其中，所述像素电极所在层与所述公共电极所在层层叠设置并通过绝缘层间隔，并且所述开口在对应的公共电极上 的正投影的宽度小于该公共电极的宽度。
  11. 如权利要求10所述的阵列基板，其中，与所述开口对应的公共电极的宽度与该开口对应的数据线的宽度相同。
  12. 如权利要求11所述的阵列基板，其中，所述阵列基板包括与所述反射区间隔设置的透射区。
  13. 如权利要求8所述的阵列基板，其中，所述开口与所述像素电极同一步骤形成。
  14. 如权利要求8所述的阵列基板，其中，所述公共电极为具有缝隙的结构，与所述开口相对应的公共电极两个均有缝隙。
  15. 一种阵列基板制造方法，其中，方法包括，在基地上形成有机绝缘层；
    在基底的有机绝缘层上依次形成像素电极、绝缘层及公共电极，其中像素电极包括与基底上的有机绝缘层下的数据线对应的开口，并且所述开口对应的公共电极两侧为缝隙。
  16. 一种液晶显示装置，其中，包括权利要求8所述的液晶显示面板及背光模组，所述背光模组与所述液晶面板层叠为所述液晶面板提供光源。
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Publication number Priority date Publication date Assignee Title
CN110504275B (zh) * 2018-05-17 2021-11-12 京东方科技集团股份有限公司 阵列基板及其制作方法、显示面板和显示装置
TWI690316B (zh) * 2018-08-23 2020-04-11 黃聰珍 噴水馬達用之噴水蓋結構
CN111640766B (zh) * 2020-06-22 2023-12-12 武汉华星光电技术有限公司 一种阵列基板及其制作方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102176095A (zh) * 2011-02-24 2011-09-07 华映视讯（吴江）有限公司 液晶显示面板的薄膜晶体管基板
JP2011227116A (ja) * 2010-04-15 2011-11-10 Seiko Epson Corp 液晶装置、液晶装置の製造方法、および投射型表示装置
CN103901686A (zh) * 2012-12-26 2014-07-02 乐金显示有限公司 边缘场开关模式液晶显示装置的阵列基板及其制造方法
CN104280932A (zh) * 2014-10-20 2015-01-14 京东方科技集团股份有限公司 一种显示面板和显示装置
CN206020892U (zh) * 2016-08-31 2017-03-15 京东方科技集团股份有限公司 阵列基板、显示面板及显示装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080049176A1 (en) * 2006-08-25 2008-02-28 Samsung Electronics Co., Ltd. Thin film transistor-array substrate, transflective liquid crystal display device with the same, and method for manufacturing the same
KR101517034B1 (ko) * 2008-12-04 2015-05-04 엘지디스플레이 주식회사 반사투과형 액정표시장치용 어레이 기판
CN102768444A (zh) * 2011-05-06 2012-11-07 瀚宇彩晶股份有限公司 液晶显示面板
CN103439840B (zh) * 2013-08-30 2017-06-06 京东方科技集团股份有限公司 一种阵列基板、显示装置及阵列基板的制造方法
CN103715206A (zh) * 2013-12-31 2014-04-09 信利半导体有限公司 一种像素单元、阵列基板及显示面板
CN104345511B (zh) * 2014-09-30 2017-09-15 南京中电熊猫液晶显示科技有限公司 像素结构及其制造方法、显示面板
KR102315816B1 (ko) * 2015-03-09 2021-10-20 엘지디스플레이 주식회사 액정 표시 장치
CN105974692A (zh) * 2016-07-25 2016-09-28 京东方科技集团股份有限公司 一种阵列基板和液晶显示面板

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011227116A (ja) * 2010-04-15 2011-11-10 Seiko Epson Corp 液晶装置、液晶装置の製造方法、および投射型表示装置
CN102176095A (zh) * 2011-02-24 2011-09-07 华映视讯（吴江）有限公司 液晶显示面板的薄膜晶体管基板
CN103901686A (zh) * 2012-12-26 2014-07-02 乐金显示有限公司 边缘场开关模式液晶显示装置的阵列基板及其制造方法
CN104280932A (zh) * 2014-10-20 2015-01-14 京东方科技集团股份有限公司 一种显示面板和显示装置
CN206020892U (zh) * 2016-08-31 2017-03-15 京东方科技集团股份有限公司 阵列基板、显示面板及显示装置

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