WO2018165819A1

WO2018165819A1 - Circuit line connection method

Info

Publication number: WO2018165819A1
Application number: PCT/CN2017/076435
Authority: WO
Inventors: 胡川; 刘俊军
Original assignee: 深圳修远电子科技有限公司
Priority date: 2017-03-13
Filing date: 2017-03-13
Publication date: 2018-09-20

Abstract

Disclosed is a circuit line connection method, comprising: arranging a first circuit layer (300) on a substrate (200), the first circuit layer (300) comprising a line (310) and connection portions (320), arranging a protective layer (400) on the first circuit layer (300), wherein the protective layer (400) covers the line (310); the protective layer (400) is provided with operating windows; the connection portions (320) correspond to the operating windows, and manufacturing thickening layers (500) on the connection portions (320) by means of the operating windows, the thickening layers (500) being electrically connected to the connection portions (320); placing an electronic part on the substrate (200), wherein the electronic part is provided with part pins, and the part pins are electrically connected to the thickening layers (500); or the substrate (200) also being provided with a second circuit layer (810), manufacturing connecting holes on the substrate (200), wherein one end of each of the connecting holes is butt-jointed with the connection portions (320), and the other end is butt-jointed with the second circuit layer (810), and arranging conductor layers in the connecting holes, the conductor layers electrically connecting the connection portions (320) to the second circuit layer (810). A high-density line can be obtained, and the line can be protected when a circuit pattern is connected to the outside.

Description

Circuit connection method

Technical field

The invention belongs to the field of electronics, and in particular relates to a circuit connection method.

Background technique

In electronic technology, it is usually necessary to make a circuit pattern, which includes several circuit connections, and it is usually necessary to electrically connect some circuit wires with another circuit or electronic component. The conventional circuit wiring method uses a soldering method, which is liable to cause a thin-walled burn-in damage, thereby limiting the refinement of the circuit pattern and failing to obtain a high-density circuit pattern.

Summary of the invention

Based on this, the present invention overcomes the deficiencies of the prior art and provides a circuit wiring method that can obtain a high-density connection and can protect the connection when the circuit pattern is externally connected.

Its technical solutions are as follows:

A circuit manufacturing method is characterized in that a first circuit layer is disposed on a substrate, the first circuit layer includes a connection and a connection portion, and a protection layer is disposed on the first circuit layer, and the protection layer covers the In the connection, the protective layer is provided with an operation window through which an thickened layer is formed in the operation window, and the thickened layer is electrically connected to the connection or the connection portion.

In one embodiment, the thickening layer is electrically connected to the connecting portion, the electronic component is placed on the substrate, the electronic component is provided with a component pin, and the component pin is electrically connected to the thickening layer .

In one of the embodiments, the component leads of the electronic component are soldered to the thickened layer.

In one embodiment, the connecting portions are at least two, and at least one of the connecting portions is provided with the thickening layer.

In one embodiment, the substrate is further provided with a second circuit layer, and a connection hole is formed in the substrate, one side of the connection portion is electrically connected to the thickening layer, and the other side of the connection portion Interfacing with the connection hole, the connection hole also abutting the second circuit layer, and providing a conductor layer in the connection hole, The conductor layer electrically connects the connection portion and the second circuit layer.

In one of the embodiments, an encapsulation layer is disposed on the substrate, the electronic component being located between the substrate and the encapsulation layer, the encapsulation layer securing the electronic component package.

In one embodiment, the substrate is disposed on the carrier, the thickening layer is disposed under the support of the carrier, and the encapsulation layer is formed, and the encapsulation layer is used to encapsulate the electronic component. The carrier is detached from the substrate.

In one embodiment, after the carrier is detached from the substrate, the second circuit layer is formed on the bottom surface of the substrate.

In one embodiment, the first circuit layer, the electronic component, and the encapsulation layer are disposed on a same side of the substrate, and the encapsulation layer fixes the first circuit layer and the electronic component package .

In one embodiment, the thickening layer is electrically connected to the connecting portion, and a particle beam or a photon beam is emitted to the substrate, and the particle beam or photon beam is formed on the substrate through the substrate. The connection hole, the particle beam or the photon beam cannot pass through the entirety of the thickened layer.

In one embodiment, the particle beam is a plasma beam or the photon beam is a laser beam.

In one embodiment, a metal layer is disposed on a surface of the substrate, the metal layer is provided with a guiding hole, and the guiding hole corresponds to the connecting portion, and a particle beam or a photon beam is emitted toward a bottom surface of the substrate, The particle beam or photon beam cannot pass through the metal layer, and the particle beam or photon beam passes through the guiding hole to form the connecting hole in the substrate.

In one embodiment, after the connection holes are formed, the metal layer is formed into the second circuit layer.

In one embodiment, the electronic component is a chip or an electronic component.

In one embodiment, the line width of the line is less than 5 microns, or the line has a thickness of less than 5 microns.

In one embodiment, the wires are at least two, and a gap is provided between the two wires, and the protective layer covers a gap between the wires.

In one of the embodiments, the gap of the wires is less than 10 microns.

In one embodiment, the thickness of the thickened layer and the connecting portion is greater than that of the whole The thickness of the connection.

In one embodiment, the thickness of the thickened layer and the joint is greater than 10 microns.

In one of the embodiments, the thickened layer is formed by a method of immersion gold/nickel.

In one of the embodiments, the operation window is at least two.

In one embodiment, the substrate is disposed on a carrier, the carrier provides support for the substrate, the protective layer is disposed, or the thickened layer is formed, or an electronic component is placed and the electronic component is placed The component leads are electrically connected to the thickened layer.

The beneficial effects of the invention are:

1. Circuit connection methods include:

a first circuit layer is disposed on the substrate, the first circuit layer includes a connection line and a connection portion, a protection layer is disposed on the first circuit layer, the protection layer covers the connection line, the protection layer is provided with an operation window, and the connection portion corresponds to the operation window. A thickened layer is formed in the operating window through the opening of the operating window through an operating window, the thickened layer being electrically connected to the wire or the connecting portion.

When the first circuit layer is fabricated, the wiring and the connecting portion are generally synchronously manufactured to improve the production efficiency, and the thickness of the connecting portion and the connecting portion are substantially the same, and a line having a narrow line width is formed, so that as many as possible in the same space. The layout is wired to obtain a high-density connection, thereby obtaining more connection paths and improving the data processing capability of the circuit. Since the aspect ratio of the connection is too large, the connection is tilted and the adhesion is short-circuited, so that the thickness of the connection is reduced while the thickness of the connection is reduced, and the thickness of the connection portion and the connection are obtained. In order to avoid problems caused by the connection process when the connection portion having a very thin thickness cannot be subjected to the connection, for example, by laser burnout, high temperature burnt by soldering, or passivation or diffusion by a metal material, in the method of the present invention:

On one hand, a thickening layer is separately formed at the joint portion, the thickness of the joint portion is increased by the thickening layer, and the thickening layer and the joint portion are electrically connected, so that the thickened layer or the joint portion can be electrically connected to the electronic component or the second circuit layer. Expanding the circuit function; at this time, the thickness of the thickened layer and the connecting portion is greater than the thickness of the connecting portion itself, and the increase in thickness makes it possible to withstand the influence of the joining process, for example, it can resist the burning or welding of the laser. High temperature, sufficient for metal passivation or diffusion;

On the other hand, the connection is covered by the protective layer, and the protective layer provides protection for the connection. The thickening layer is not affected by the connection. The connection still retains the original narrow line width and thin thickness (less than 10 microns). ), thereby obtaining a high connection density and improving the data processing capability of the circuit; and in the connection process, the protective layer can also provide a certain protection for the connection.

Wherein, the line width of the connection refers to the width of the cross section of the connection, as shown by D1 in FIG. 4; the thickness of the connection refers to the height of the cross section of the connection, as shown by H in FIG.

In addition, since the method of the invention has high connection density, thin thickness and narrow line width, the fault tolerance is weak, and the misalignment caused by the displacement or deformation of the connection should be avoided in various processes, and the protective layer is covered to cover the connection. It is also possible to limit the misalignment of the connection and further increase the yield.

2. The electronic components are placed on the substrate, the electronic components are provided with component leads, and the component leads are electrically connected with the thickened layer; the parts of the electronic components are soldered to the thickened layer. The thickness of the thickened layer is increased to withstand the effects of soldering, such as the high temperature of soldering; or when soldering is used, such as solder, the thickness of the thickened layer is sufficient for metal diffusion and passivation by the flux. .

3. The thickened layer is formed by electroless plating. It is possible to simultaneously form a thickened layer on all the connecting portions on the substrate, which is highly efficient. At the same time, the thickening layer can be made of the same material as the connecting portion, the thickening layer and the connecting portion are better integrated, and the electrical connection performance is better.

4. The substrate is further provided with a second circuit layer, and a connection hole is formed in the substrate. One end of the connection hole is butted to the connection portion, and the other end is butted to the second circuit layer. A conductor layer is disposed in the connection hole, and the conductor layer is connected to the second portion. The circuit layers are electrically connected. Providing a substrate on a carrier, the carrier providing support for the substrate, providing the protective layer, or fabricating the thickened layer, or placing the electronic component, or placing the component pin with the Thickened layers are electrically connected. Since the method of the invention has high connection density, thin thickness and narrow line width, the fault tolerance is weak, and the support plate is used as the support of the substrate, so that the connection position can be kept fixed and the misalignment of the connection can be restricted.

In particular, when the substrate is a flexible circuit board or the substrate thickness is thin, when the thin or soft substrate is insufficient to provide support, the support of the carrier plate can ensure that the substrate and the connection are not deformed, which is advantageous for implementation of various processes. The flexible circuit board is suitable for use in a wearable device in combination with the thin-walled high-density wiring of the present invention; the thin substrate of the thickness can be used to form the substrate, the first circuit layer, and the electronic component. The overall thickness is very thin and made into an ultra-thin circuit board.

5. An encapsulation layer is disposed on the substrate, the electronic component is located between the substrate and the encapsulation layer, and the encapsulation layer encapsulates the electronic component. The encapsulation layer fixes and fixes the electronic components, and fixes the relative positions of the electric components and the wires, the connecting portions, and the thickened layers to limit the misalignment.

6. After the package layer is fixed by the electronic component, the carrier board is detached from the substrate, the electronic component is fixed by the encapsulation layer, and the position is no longer changed. At this time, the carrier board completes its supporting function, and the carrier board can be detached from the substrate. By reducing the overall thickness of the substrate, the first circuit layer, and the electronic component, an ultra-thin circuit board can be obtained.

7. After the carrier is detached from the substrate, a second circuit layer is formed on the bottom surface of the substrate. Making a second circuit layer on the bottom surface of the substrate and connecting the first circuit layer and the second circuit layer can achieve more circuit connections and improve the overall performance of the circuit. And the top surface of the substrate is packaged and fixed by the encapsulation layer, and the encapsulation layer can provide support for forming the second circuit layer, thereby avoiding deformation and dislocation of the second circuit layer, so that the line width of the second circuit layer can be made narrow, and the second circuit is improved. The wiring density of the layer.

The material of the encapsulating layer can be selected as needed, for example, a resin material is selected as the encapsulating layer, and the curing of the resin material can be sufficiently strong to fix the electronic component, and is sufficient to provide support for the second circuit layer. And, after the second insulating layer is disposed on the second circuit layer, the third circuit layer is formed on the second insulating layer, the third insulating layer is disposed on the third circuit layer, and the fourth circuit layer is formed on the third insulating layer. , and so on, to make multi-layer 3D circuits.

8. The first circuit layer, the electronic component and the encapsulation layer are disposed on the top surface of the substrate, and the encapsulation layer simultaneously fixes the first circuit layer and the electronic component package, defines a position between the electronic component and the first circuit layer, and ensures the electronic component and The connection between the first circuit layers is reliable.

9. After the encapsulation layer fixes the first circuit layer and the electronic component package, the carrier board and the substrate are separated from the first circuit layer and the electronic component. The electronic component and the first circuit layer are fixed by the encapsulation layer, and the relative positions thereof are no longer changed. At this time, the carrier board and the substrate complete the supporting action, and the carrier board and the substrate can be detached, and the first circuit layer, the electronic component and the package are separated from the substrate. The layers constitute a circuit board, and the overall thickness of the first circuit layer, the electronic component, and the package layer is reduced, and an ultra-thin circuit board can be obtained. After the detachment, other circuit structures may be formed on the bottom surface of the first circuit layer, for example, after the first insulating layer is provided, the first insulating layer is fabricated. The second circuit layer is provided with a second insulating layer on the second circuit layer and a third circuit layer on the second insulating layer, and so on.

10. A particle beam or a photon beam is emitted to the substrate, and the particle beam or the photon beam passes through the substrate to form a connection hole on the substrate, and the particle beam or the photon beam cannot pass through the entirety of the connection portion and the thickening layer. It is possible to simultaneously emit a particle beam or a photon beam to the entire substrate, and simultaneously make all the connection holes to improve production efficiency.

11. A metal layer is disposed on the bottom surface of the substrate, and the metal layer is provided with a guiding hole corresponding to the connecting portion, and a particle beam or a photon beam is emitted toward the bottom surface of the substrate, and the particle beam or the photon beam cannot pass through the metal layer, the particle beam or the photon. After the bundle passes through the guide hole, a connection hole is formed in the substrate. The guiding hole provides positioning for making the connecting hole, and the connecting hole can be made only at the position where the guiding hole is provided. It is possible to simultaneously emit a particle beam or a photon beam to the entire substrate, and simultaneously make all the connection holes to improve production efficiency.

12. After the connection hole is formed, the metal layer is made into the second circuit layer. The metal layer can provide positioning for making the connection holes, and is also a raw material for making the second circuit layer, saving steps and improving efficiency. The metal layer may be formed into the second circuit layer by photolithography.

13. Electronic components are chips or electronic components. When the electronic component is a chip, the high-density connection obtained by the present invention can provide more connection and increase the data transmission speed of the chip due to the fast calculation speed of the chip and the fast data transmission speed.

14. The line width of the connection is less than 5 microns. The smaller the line width of the connection, the more the connection can be arranged in the same space.

Alternatively, the thickness of the connection is less than 5 microns. On the one hand, the thickness of the connection corresponds to the line width to prevent the connection from sticking. On the other hand, with the method of the present invention, the thickness of the wiring does not affect the connection of the connecting portion, and the thickness of the wiring can be made as small as possible.

15. The connection is at least two, and there is a gap between the two lines, and the protective layer covers the gap between the lines. The protective layer covers the surface and side of the wire. In addition to protecting the wire surface, it also protects the cable from short-circuiting. In particular, the thick gold layer can be used to form a thickened layer simultaneously on all the joints on the substrate, and the efficiency is high. When a thickened layer is formed by evaporation, sputtering, electroplating, etc., the protective layer is used. Covering the gap between the wires and the wires, the metal is not grown in the height direction of the wires, and the metal is not grown in the thickness direction of the wires. The wires maintain the original high density state without being affected. ring. A sufficient gap is reserved between the connecting portions to avoid the influence of metal growth in the thickness direction of the connecting portion.

16. The gap between the wires is less than 10 microns. The smaller the gap between the wires, the more wires can be placed in the same space. The gap width of the two wires is shown as D2 in FIG.

17. The thickness of the entire thickened layer and the connecting portion is greater than the thickness of the connecting line. With the method of the present invention, the thickening is provided separately at the joint without breaking the original line width and thickness of the wire, and the increased thickness helps to electrically connect the joint or thickened layer to the electronic component or the second circuit layer.

18. The connecting portion is at least two, and at least one connecting portion is provided with a thickening layer. The connecting portion may be a contact, and a connecting portion may be formed in a connecting portion that requires an increased thickness as the case may be.

19. The at least two connecting portions have a thickened layer, wherein one of the connecting portions is electrically connected to the component pins through the thickening layer, and the other connecting portion is electrically connected to the second circuit layer. Parts that are connected to the connection can be selected as needed.

DRAWINGS

1 is a schematic diagram of a chip connection method according to an embodiment of the present invention;

Figure 2 is an enlarged view of A in Figure 1;

Figure 3 is a plan view of Figure 3;

4 is a schematic view showing line width, thickness, and spacing of a connection according to an embodiment of the present invention;

FIG. 5 is a schematic diagram of a protective layer according to an embodiment of the present invention; FIG.

6 is a schematic view of a thickening layer according to an embodiment of the present invention;

FIG. 7 is a schematic diagram of a chip mounted according to an embodiment of the present invention; FIG.

FIG. 8 is a schematic diagram of an encapsulation layer package according to an embodiment of the present invention; FIG.

9 is a schematic view of a carrier after being detached according to an embodiment of the present invention;

FIG. 10 is a schematic diagram of making a connection hole according to an embodiment of the present invention; FIG.

11 is a schematic view showing a conductor layer provided in an embodiment of the present invention;

FIG. 12 is a schematic diagram of a method for connecting a chip according to an embodiment of the present invention.

Description of the reference signs:

100, carrier board, 110, bonding medium, 200, substrate, 300, first circuit layer, 310, wiring, 320, connection, 400, protective layer, 500, thickening layer, 510, flux, 600, Chip, 610, chip pin, 620, adhesive layer, 700, encapsulation layer, 800, metal layer, 810, second circuit layer, 900, laser.

detailed description

The present invention will be further described in detail below, but embodiments of the invention are not limited thereto.

Embodiment 1

As shown in FIG. 1 , it is a structural cross-sectional view of the chip connection method of the present embodiment. The substrate 200 is disposed on the carrier 100 , and the first circuit layer 300 is formed on the substrate 200 by using the carrier 100 as a support. The first circuit layer 300 is disposed. (Unless limited to the embodiment, the first circuit layer 300 may be disposed on the substrate 200, and then the substrate 200 and the first circuit layer 300 may be transferred to the carrier 100).

The first circuit layer 300 includes a wire 310 and a connection 320. The line width of the connection line 310 is less than 5 micrometers, and the line width of the connection line 310 refers to the width of the cross section of the connection line 310. As shown by D1 in FIG. 4, the smaller the line width of the connection line 310, the more space can be in the same space. More connections 310 are placed inside. The thickness of the wire 310 is less than 5 microns, and the thickness of the wire 310 refers to the height of the cross section of the wire 310, as shown by H in FIG. In one aspect, the thickness of the wire 310 corresponds to the line width to prevent the wire 310 from tipping over. On the other hand, with the method of the present invention, the thickness of the wiring 310 does not affect the connection of the connecting portion 320, and the thickness of the wiring 310 can be made as small as possible. The connection line 310 is at least two, and a gap is provided between the two lines 310, and the gap of the connection line 310 is less than 10 micrometers. The smaller the gap of the wiring 310, the more the wiring 310 can be arranged in the same space, and the gap width of the two wirings 310 is as shown by D2 in FIG. The connecting portions 320 are at least two, and one operating window may correspond to one or more connecting portions 320.

When the first circuit layer 300 is formed, the connection 310 and the connection portion 320 are generally synchronously formed to improve the production efficiency. The thickness of the connection 310 and the connection portion 320 are substantially the same. In this embodiment, a layer is disposed on the top surface of the substrate 200. Metal material, the metal material is made into a wire 310 and a connecting portion 320, and the materials are the same. As shown in FIG. 2 and FIG. 3, the thickness of the connecting wire 310 and the connecting portion 320 are the same, and constitute a whole, but not Limited to FIGS. 2 and 3, the wire 310 and the connecting portion 320 may have other shapes.

As shown in FIG. 5, a protective layer 400 is disposed on the first circuit layer 300. The protective layer 400 covers the connection 310. The protective layer 400 is provided with an operation window. The connection portion 320 corresponds to the operation window, and the operation window can expose the connection portion 320. The connection portion 320 can be connected to another electronic device through the operation window, or the connection portion 320 can be used as a connection contact. The protective layer 400 provides shielding and protection for the connection 310, which can prevent the subsequent process from damaging the connection 310. Since the line width of the connection 310 is narrow, the thickness is small, and the pitch is small, the protective layer 400 can be disposed between the connections 310. Misconnection.

As shown in FIG. 6, a thickening layer 500 is formed on the connecting portion 320 by an immersion gold/nickel method or an electroplating method through an operation window, and the thickening layer 500 is electrically connected to the connecting portion 320. A thickening layer 500 is disposed on at least one of the connecting portions 320. The connecting portion 320 may be a contact, and the connecting portion 320 may be formed in the connecting portion 320 where the thickness is increased, as the case may be. The thickness of the obtained thickened layer 500 and the connecting portion 320 as a whole is greater than the thickness of the connecting line 310. In the present embodiment, the thickening layer 500 is made of the same material as the connecting portion 320, and the thickening layer 500 and the connecting portion 320 are better integrated and the electrical connection performance is better. On the one hand, the thickness is increased in the connecting portion 320 alone without breaking the original line width and thickness of the connecting line 310, and the thickness of the connecting portion 320 is increased by the thickening layer 500, so that the thickening layer 500 can be subjected to the joining process. The effect, for example, can resist the high temperature of the cauterization or soldering of the laser 900, sufficient metal passivation or diffusion; on the other hand, the wiring 310 is covered by the protective layer 400, and the protective layer 400 provides protection for the wiring 310 to form the thickening layer 500. No impact on the connection 310, the connection 310 still retains the original narrow line width, very thin thickness (less than 10 microns), thereby obtaining a high density of the connection 310, improving the data processing capability of the circuit; In the bonding process, the protective layer 400 can also provide a certain protection for the wiring 310. Further, the thickened layer 500 is formed by a method of vapor deposition, sputtering, or electroplating. The thickening layer 500 can be formed simultaneously on all the connecting portions 320 on the substrate 200, and the efficiency is high.

Wherein, the protective layer 400 covers the gap between the wires 310. The protective layer 400 covers the surface and the side of the wiring 310, and in addition to protecting the surface of the wiring 310, it can protect the connection 310 from short-circuiting. In particular, the immersion gold/nickel method for forming the thickening layer 500 can simultaneously form the thickening layer 500 on all the connecting portions 320 on the substrate 200, and the efficiency is high. When the thickening layer 500 is formed by the method of immersion gold/nickel, the protective layer 400 covers the gap between the connection line 310 and the connection line 310, neither the metal is grown in the height direction of the connection line 310 nor the metal is grown in the thickness direction of the connection line 310, and the connection line 310 remains original. The high density state is not affected. Further, a sufficient gap is reserved between the connecting portions 320 to avoid the influence of the growth of metal in the thickness direction of the connecting portion 320.

After the thickening layer 500 is formed, the electronic component can be placed on the substrate 200, the electronic component is provided with a component pin, and the component pin is electrically connected to the thickening layer 500 to realize electrical connection between the electronic component and the first circuit layer 300. . The electronic component is a chip 600 or an electronic component, and the electronic component includes but is not limited to an electronic component or device such as a resistor, a capacitor, a diode, a triode, an antenna, etc. In this embodiment, the electronic component is a chip 600, as shown in FIG. The chip 600 is adhered to the substrate 200 through the adhesive layer 620. The chip 600 is provided with a chip lead 610, and the chip lead 610 is soldered to the thickening layer 500 through the flux 510 to realize electrical connection between the chip 600 and the first circuit layer 300. . The thickness of the thickening layer 500 is increased to withstand the influence of soldering, such as high temperature of soldering; or when the solder 510 such as solder is used for soldering, the thickness of the thickening layer 500 is sufficient for the metal brought by the flux 510. Diffusion and passivation.

As shown in FIG. 8, an encapsulation layer 700 is disposed on the substrate 200. The chip 600 and the first circuit layer 300 are located between the substrate 200 and the encapsulation layer 700. The encapsulation layer 700 simultaneously fixes the first circuit layer 300 and the electronic component package, and is defined. The position between the electronic component and the first circuit layer 300 ensures a reliable connection between the electronic component and the first circuit layer 300.

As shown in FIG. 9, after the package layer 700 is fixed by the electronic component package, the carrier 100 is detached from the substrate 200, and the chip 600 and the first circuit layer 300 are fixed by the package layer 700, and the position is no longer changed. The board 100 completes its supporting function, and the carrier board 100 can be detached from the substrate 200, so that the overall thickness of the substrate 200, the first circuit layer 300, and the chip 600 is reduced, and an ultra-thin circuit board can be obtained.

After the carrier 100 is detached from the substrate 200, a metal layer 800 is provided on the bottom surface of the substrate 200. As shown in FIG. 10, the metal layer 800 is provided with a guiding hole, and the guiding hole corresponds to the connecting portion 320, and emits particles toward the bottom surface of the substrate 200. A beam or photon beam, including but not limited to a plasma beam, including but not limited to a laser 900 beam. In this embodiment, a laser beam 900 is used, and the laser beam 900 cannot pass through the metal layer 800. After the laser beam 900 passes through the guiding hole, a connection hole is formed in the substrate 200. The guiding hole provides positioning for making the connecting hole, and the connecting hole can be made only at the position where the guiding hole is provided. The particle beam or the photon beam cannot pass through the entirety of the connecting portion and the thickened layer, and the fine connecting portion is prevented from being damaged by the particle beam or the laser beam, thereby ensuring the integrity of the connecting portion. Therefore, the connection portion can be made thinner and thinner, and the density of the connection portion can be increased. Thereby, a higher density electrical connection line can be set to increase the data transmission speed. In addition, it is possible to simultaneously emit a laser beam 900 to the entire substrate 200, and simultaneously make all the connection holes, thereby improving production efficiency.

As shown in FIG. 11, after the connection hole is formed, the metal layer 800 is formed into a second circuit layer 810, and a conductor layer is disposed in the connection hole, and the conductor layer electrically connects the thickening layer 500 and the metal layer 800 or the second circuit layer 810. . The metal layer 800 can provide positioning for making the connection holes, and is also a raw material for fabricating the second circuit layer 810, saving steps and improving efficiency. The metal layer 800 can be formed into a second circuit layer 810 by photolithography. At this time, the top surface of the substrate 200 is encapsulated and fixed by the encapsulation layer 700, and the encapsulation layer 700 can provide support for forming the second circuit layer 810, thereby preventing the second circuit layer 810 from being deformed and dislocated, so that the line width of the second circuit layer 810 can be made. It is narrow and the wiring density of the second circuit layer 810 is increased.

The parts connected to the connecting portion 320 can be selected as needed. For example, at least two connecting portions 320 have a thickening layer 500, wherein one connecting portion 320 is electrically connected to the chip lead 610 through the thickening layer 500, and another connecting portion 320 is electrically connected to the second circuit layer 810; or The same connection portion 320 is electrically connected to the chip lead 610 through the thickening layer 500 and to the second circuit layer 810.

The material of the encapsulation layer 700 may be selected as desired, for example, a resin material is selected as the encapsulation layer 700, and the resin material curing may be sufficiently strong to fix the electronic component, and is sufficient to provide support for the second circuit layer 810. Moreover, a third circuit layer can be formed on the second insulating layer after the second insulating layer is disposed on the second circuit layer 810, a third insulating layer is disposed on the third circuit layer, and a fourth circuit is formed on the third insulating layer. Layers, and so on, make multi-layer 3D circuits.

This embodiment is particularly applicable to the case where the substrate 200 is a flexible circuit board or the substrate 200 is very thin. When the thin or soft substrate 200 is insufficient to provide support, the support of the carrier 100 can ensure that the substrate 200 and the connection 310 are not deformed. It is conducive to the implementation of various processes. The flexible circuit board is compatible with the thin-density high-density wiring 310 of the present invention, and can be suitably applied to a wearable device; the thin substrate 200 having a thickness can make the substrate 200, the first circuit layer 300, and the chip 600 The overall thickness is very thin and is made into an ultra-thin circuit board.

As shown in FIG. 1, the carrier 100 may be made of glass or metal, and the glass and metal as the carrier 100 have a good flatness and small thermal deformation, which is advantageous for maintaining a reliable connection between the first circuit layer 300 and the chip 600. . The metal material is preferably made of stainless steel to provide a high degree of flatness on the stainless steel surface. Choose to The light-transmissive glass is used to form the carrier 100, and the photosensitive adhesive medium 110 is disposed between the carrier 100 and the substrate 200. The light-transmitting property of the glass material can adjust the illumination of the photosensitive adhesive medium 110 from one side of the carrier 100. The carrier 100 is detached from the substrate 200. The carrier 100 is made of a metal material, and a heat-sensitive adhesive medium 110 is disposed between the carrier 100 and the substrate 200. The temperature of the heat-sensitive adhesive medium 110 is adjusted from one side of the carrier 100 to disengage the carrier 100 from the substrate 200. The metal has good thermal conductivity and facilitates the use of the heat-sensitive adhesive medium 110. Moreover, the metal has high strength and is not easily worn. For example, the carrier plate 100 can be made of stainless steel to prevent rust.

Embodiment 2

The difference between the second embodiment and the first embodiment is:

After the electronic component is not provided, the encapsulation layer 700 encapsulates and fixes the first circuit layer 300, then the carrier 100 is detached from the substrate 200, and then a second circuit layer 810 is formed on the bottom surface of the substrate 200, and a connection hole is formed in the substrate 200. A conductor layer is disposed inside, and the conductor layer electrically connects the thickening layer 500 and the second circuit layer 810 as shown in FIG.

Embodiment 3

The difference between the third embodiment and the first embodiment is:

Directly detach the substrate 200

After the encapsulation layer 700 encapsulates the first circuit layer 300 and the chip 600, the carrier 100 and the substrate 200 are detached from the first circuit layer 300 and the chip 600. The chip 600 and the first circuit layer 300 are fixed by the encapsulation layer 700, and the relative positions of the chip are not changed. At this time, the carrier 100 and the substrate 200 complete their supporting functions, and the carrier 100 and the substrate 200 are detached, and the first circuit is separated. The layer 300, the chip 600, and the encapsulation layer 700 constitute a circuit board, and the overall thickness of the first circuit layer 300, the chip 600, and the encapsulation layer 700 is reduced, and an ultra-thin circuit board can be obtained. After the detachment, other circuit structures may be formed on the bottom surface of the first circuit layer 300. For example, after the first insulating layer is disposed, the second circuit layer 810 is formed on the first insulating layer, and the second circuit layer 810 is provided with the second insulating layer. The layer is formed on the second insulating layer to form a third circuit layer, and so on to make a multilayered 3D circuit.

The technical features of the above embodiments may be arbitrarily combined. For the sake of brevity of description, all possible combinations of the technical features in the above embodiments are not described. However, as long as there is no contradiction in the combination of these technical features, It is considered to be the range described in this specification.

The above embodiments are merely illustrative of several embodiments of the present invention, and the description thereof is more specific and detailed, but is not to be construed as limiting the scope of the invention. It should be noted that a number of variations and modifications may be made by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of the invention should be determined by the appended claims.

Claims

A circuit manufacturing method is characterized in that a first circuit layer is disposed on a substrate, the first circuit layer includes a connection and a connection portion, and a protection layer is disposed on the first circuit layer, and the protection layer covers the In the connection, the protective layer is provided with an operation window through which an thickened layer is formed in the operation window, and the thickened layer is electrically connected to the connection or the connection portion.
The method of manufacturing a circuit according to claim 1, wherein said thickened layer is electrically connected to said connecting portion, said electronic component is placed on said substrate, said electronic component is provided with a component pin, said component pin Electrically connected to the thickened layer.
The circuit manufacturing method according to claim 2, wherein the component leads of the electronic component are soldered to the thickened layer.
The method of manufacturing a circuit according to claim 4, wherein said connecting portion is at least two, and said thickened layer is provided on at least one of said connecting portions.
The circuit manufacturing method according to claim 1, wherein the substrate is further provided with a second circuit layer, and a connection hole is formed in the substrate, and one side of the connection portion is electrically connected to the thickened layer, The other side of the connecting portion abuts the connecting hole, the connecting hole also interfaces with the second circuit layer, and a conductor layer is disposed in the connecting hole, and the conductor layer connects the connecting portion and the The second circuit layer is electrically connected.
The circuit manufacturing method according to claim 5, wherein an encapsulation layer is disposed on the substrate, the electronic component is located between the substrate and the encapsulation layer, and the encapsulation layer encapsulates the electronic component fixed.
The circuit manufacturing method according to claim 6, wherein the substrate is disposed on the carrier, the thickening layer is disposed under the support of the carrier, and the encapsulation layer is formed, and the encapsulation layer is After the electronic component package is fixed, the carrier is detached from the substrate.
The circuit manufacturing method according to claim 6, wherein the second circuit layer is formed on a bottom surface of the substrate after the carrier is detached from the substrate.
The circuit manufacturing method according to claim 6, wherein the first circuit layer, the electronic component, and the encapsulation layer are disposed on a same side of the substrate, and the encapsulation layer is the first circuit The layer and the electronic component are packaged and fixed.
The method of manufacturing a circuit according to claim 1, wherein said thickening layer is electrically connected to said connecting portion, and a particle beam or a photon beam is emitted toward said substrate, said particle beam or photon beam passing through said The substrate is formed on the substrate as the connection hole, and the particle beam or photon beam cannot pass through the entirety of the thickened layer.
The circuit manufacturing method according to claim 10, wherein the particle beam is a plasma beam, or the photon beam is a laser beam.
The circuit manufacturing method according to claim 10, wherein a metal layer is disposed on a surface of the substrate, the metal layer is provided with a guiding hole, and the guiding hole corresponds to the connecting portion to the substrate The bottom surface emits a beam of particles or a beam of photons that cannot pass through the layer of metal, and the beam of particles or photon beam passes through the guiding aperture to form the connecting hole in the substrate.
The method of manufacturing a circuit according to claim 12, wherein said metal layer is formed into said second circuit layer after said connection hole is formed.
The method of manufacturing a circuit according to any one of claims 1 to 13, wherein the electronic component is a chip or an electronic component.
The method of manufacturing a circuit according to any one of claims 1 to 13, wherein the line width of the line is less than 5 μm, or the thickness of the line is less than 5 μm.
The circuit manufacturing method according to any one of claims 1 to 13, wherein the connection is at least two, and a gap is provided between the two wires, and the protective layer covers the connection between the wires Clearance.
The circuit manufacturing method according to any one of claims 16 to 4, wherein the gap of the wiring is less than 10 μm.
The method of manufacturing a circuit according to any one of claims 1 to 13, characterized in that the thickness of the thickened layer and the connecting portion as a whole is larger than the thickness of the connecting line.
The method of manufacturing a circuit according to claim 18, wherein the thickness of the thickened layer and the connecting portion as a whole is greater than 10 μm.
The method of manufacturing a circuit according to any one of claims 1 to 13, wherein the thickened layer is formed by a method of immersion gold/nickel.
The circuit manufacturing method according to any one of claims 1 to 13, characterized in that the operation window is at least two.
The circuit manufacturing method according to any one of claims 1 to 13, characterized in that the substrate is placed on a carrier, the carrier provides support for the substrate, the protective layer is provided, or the addition is made. Thick layers, or mounting electronic components and electrically connecting the component leads of the electronic component to the thickened layer.