WO2018155701A1 - Magnetic sensor - Google Patents

Magnetic sensor Download PDF

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Publication number
WO2018155701A1
WO2018155701A1 PCT/JP2018/007127 JP2018007127W WO2018155701A1 WO 2018155701 A1 WO2018155701 A1 WO 2018155701A1 JP 2018007127 W JP2018007127 W JP 2018007127W WO 2018155701 A1 WO2018155701 A1 WO 2018155701A1
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Prior art keywords
magnetic
magnetic layer
wiring
magnetic sensor
layer
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PCT/JP2018/007127
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French (fr)
Japanese (ja)
Inventor
剛男 五木田
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Tdk株式会社
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Priority to JP2019501869A priority Critical patent/JP7099438B2/en
Publication of WO2018155701A1 publication Critical patent/WO2018155701A1/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Definitions

  • the present invention relates to a magnetic sensor, and more particularly to a magnetic sensor including a magnetoresistive effect element and a magnetic layer formed on a substrate.
  • Magnetic sensors using magnetoresistive elements are widely used in ammeters, magnetic encoders, and the like, and may include a magnetic layer for converging magnetic flux to the magnetoresistive elements.
  • a magnetoresistive element is arranged in a gap formed by two magnetic layers (thin film yokes), and thereby a magnetic flux in a predetermined direction is efficiently applied to the magnetoresistive element. ing.
  • the magnetic sensor described in Patent Document 1 uses the magnetic layer as a part of the signal wiring, when an electromagnetic wave flying from the outside enters the magnetic layer, the signal is transmitted through the magnetic layer. There was a problem that noise was superimposed on the wiring.
  • the magnetoresistive effect element and the magnetic layer may be insulated and separated, but even in this case, the magnetoresistive effect element and the magnetic layer need to be arranged close to each other. Therefore, both of them are capacitively coupled, and high frequency noise may be superimposed on the signal wiring.
  • an object of the present invention is to prevent noise caused by electromagnetic waves flying from the outside from being superimposed on a signal wiring in a magnetic sensor including a magnetoresistive effect element and a magnetic layer formed on a substrate.
  • a magnetic sensor according to the present invention is provided on a substrate, a magnetoresistive effect element provided on the substrate and connected between a power supply wiring and a signal wiring, and adjacent to the magnetoresistive effect element. And a magnetic layer connected to the power supply wiring.
  • the magnetic layer adjacent to the magnetoresistive effect element since the magnetic layer adjacent to the magnetoresistive effect element is connected to the power supply wiring, noise due to electromagnetic waves flying from the outside does not directly overlap the signal wiring. In addition, since the magnetic layer is connected to the power supply wiring, noise due to electromagnetic waves can be released to the power supply wiring. Furthermore, since the magnetic layer and the magnetoresistive effect element are connected to the same power supply wiring, an increase in the number of wirings can be minimized.
  • the magnetic sensor according to the present invention may further include a resistance element connected between the magnetic layer and the power supply wiring and having a resistance value lower than that of the magnetoresistance effect element.
  • the magnetic layer need not be directly connected to the power supply wiring, and may be connected via a resistance element having a lower resistance value than the magnetoresistive effect element.
  • the magnetic layer includes first and second magnetic layers, and the magnetoresistive element is formed by a gap between the first magnetic layer and the second magnetic layer. It is preferable to be disposed on the magnetic path. According to this, effective magnetic collection can be performed by the two magnetic layers, and high directivity can be provided.
  • the first magnetic layer is connected to the power line
  • the second magnetic layer is insulated from both the power line and the signal line
  • the area of the first magnetic layer May be larger than the area of the second magnetic layer.
  • the magnetic sensor according to the present invention preferably further comprises a resistance element connected between the signal wiring and another power supply wiring. According to this, it becomes possible to take out a change in the resistance value of the magnetoresistive effect element as a change in voltage.
  • the resistance element may be another magnetoresistance effect element.
  • the magnetic layer further includes a third magnetic layer, and the magnetoresistive element is formed by a gap between the first magnetic layer and the second magnetic layer.
  • the magnetic path includes a plurality of magnetoresistive elements arranged on the magnetic path and bridged by the magnetic path formed by the gap between the second magnetic layer and the third magnetic layer. . This makes it possible to further increase the amplitude of the output signal.
  • the power supply wiring is preferably a ground wiring. According to this, it is possible to reliably stabilize the potential of the magnetic layer and to prevent the occurrence of an unexpected short circuit failure.
  • a magnetic sensor including a magnetoresistive element and a magnetic layer formed on a substrate, it is possible to effectively prevent noise caused by electromagnetic waves flying from the outside from being superimposed on the signal wiring. It becomes possible.
  • FIG. 1 is a schematic plan view for explaining the configuration of the magnetic sensor 10A according to the first embodiment of the present invention.
  • FIG. 2 is a schematic cross-sectional view along the line AA shown in FIG.
  • FIG. 3 is a schematic plan view for explaining the configuration of the magnetic sensor 10B according to the second embodiment of the present invention.
  • FIG. 4 is a schematic plan view for explaining the configuration of a magnetic sensor 10C according to the third embodiment of the present invention.
  • FIG. 5 is a schematic plan view for explaining the configuration of a magnetic sensor 10D according to the fourth embodiment of the present invention.
  • FIG. 6 is a schematic plan view for explaining the configuration of a magnetic sensor 10E according to the fifth embodiment of the present invention.
  • FIG. 1 is a schematic plan view for explaining the configuration of the magnetic sensor 10A according to the first embodiment of the present invention.
  • FIG. 2 is a schematic cross-sectional view along the line AA shown in FIG.
  • FIG. 3 is a schematic plan view for explaining the configuration of the magnetic sensor 10B
  • FIG. 7 is a schematic plan view for explaining the configuration of the magnetic sensor 10F according to the sixth embodiment of the present invention.
  • FIG. 8 is a schematic plan view for explaining the configuration of a magnetic sensor 10G according to the seventh embodiment of the present invention.
  • FIG. 9 is a schematic plan view for explaining the configuration of the magnetic sensor 10H according to the eighth embodiment of the present invention.
  • FIG. 10 is a schematic cross-sectional view along the line DD shown in FIG.
  • FIG. 11 is a cross-sectional view showing a first modification of the magnetic sensor 10H.
  • FIG. 12 is a cross-sectional view showing a second modification of the magnetic sensor 10H.
  • FIG. 13 is a cross-sectional view showing a third modification of the magnetic sensor 10H.
  • FIG. 14 is a schematic plan view for explaining the configuration of the magnetic sensor 10I according to the ninth embodiment of the present invention.
  • FIG. 1 is a schematic plan view for explaining the configuration of the magnetic sensor 10A according to the first embodiment of the present invention.
  • FIG. 2 is a schematic cross-sectional view along the line AA shown in FIG.
  • the magnetic sensor 10 ⁇ / b> A includes the first and second magnetic layers 21 and 22 arranged in the x direction and the first (in the z direction) view in plan view. And a magnetoresistive effect element 11 disposed at a position overlapping with a gap provided between the first and second magnetic layers 21 and 22.
  • the magnetoresistive effect element 11 is an element whose electric resistance changes according to the direction and strength of the magnetic field.
  • the longitudinal direction of the magnetoresistive effect element 11 is the y direction
  • the sensitivity direction (fixed magnetization direction) is the direction indicated by the arrow B in FIGS. 1 and 2 (plus side in the x direction).
  • the first and second magnetic layers 21 and 22 function to collect the magnetic flux to be detected, align the direction of the magnetic flux, and apply this to the magnetoresistive element 11.
  • the first and second magnetic layers 21 and 22 may be a film made of a composite magnetic material in which a magnetic filler is dispersed in a resin material, or a thin film or foil made of a soft magnetic material such as nickel or permalloy. It may be a thin film or a bulk sheet made of ferrite or the like.
  • the magnetoresistive effect element 11 and the first and second magnetic layers 21 and 22 are both provided on the substrate 30.
  • a thin insulating layer 31 is formed on the surface of the substrate 30, and the magnetoresistive effect element 11 is formed on the surface of the insulating layer 31.
  • the magnetoresistive effect element 11 is covered with another insulating layer 32, and first and second magnetic layers 21 and 22 are formed on the surface of the insulating layer 32.
  • the insulating layer 32 may be omitted, and the magnetoresistive element 11 and the first and second magnetic layers 21 and 22 may be formed on the surface of the insulating layer 31.
  • the magnetoresistive effect element 11 and the first and second magnetic layers 21 and 22 are arranged so as to be adjacent to each other in the x direction. Therefore, when receiving a magnetic field in the x direction, a magnetic flux is generated from the first magnetic layer 21 to the second magnetic layer 22 (or from the second magnetic layer 22 to the first magnetic layer 21). At that time, the magnetic flux crosses the magnetoresistive element 11 in the x direction. As a result, the resistance value of the magnetoresistive effect element 11 changes depending on the direction and strength of the magnetic flux.
  • one end of the magnetoresistive effect element 11 in the y direction is connected to the ground wiring G, and the other end is connected to the signal wiring S.
  • the ground wiring G is a power supply wiring to which the ground potential GND is supplied.
  • a resistance element R is connected between the power supply wiring P to which the power supply potential Vcc is supplied and the signal wiring S.
  • the resistance element R may be a metal film resistance having a substantially constant resistance value, or may be a resistance value changing like a magnetoresistance effect element.
  • the first and second magnetic layers 21 and 22 and the signal wiring S need to be separated so as not to be directly connected.
  • the first and second magnetic layers 21 and 22 are connected to the ground wiring G, whereby the first and second magnetic layers 21 and 22 are fixed to the ground potential GND. Has been. For this reason, since the potentials of the first and second magnetic layers 21 and 22 hardly change even when an electromagnetic wave flying from the outside is received, no noise is generated in the output signal OUT due to the external electromagnetic wave.
  • the first and second magnetic layers 21 and 22 provided adjacent to the magnetoresistive element 11 are fixed to the ground potential GND. It is possible to suppress noise caused by electromagnetic waves.
  • the ground potential GND is applied to the first and second magnetic layers 21 and 22.
  • the present invention is not limited to this, and the ground potential GND is set to a fixed potential. It is not limited. Therefore, instead of applying the ground potential GND, the power supply potential Vcc may be supplied through the power supply wiring P.
  • it is effective to connect to a power supply wiring having a lower impedance, so it is most preferable to apply the ground potential GND.
  • the magnetoresistive effect element 11 and the first and second magnetic layers 21 and 22 are connected to the same power supply wiring (ground wiring G), but this point is not essential in the present invention. . Therefore, for example, the magnetoresistive effect element 11 may be connected to the ground wiring G, and the first and second magnetic layers 21 and 22 may be connected to the power supply wiring P. However, if the magnetoresistive effect element 11 and the first and second magnetic layers 21 and 22 are connected to the same power supply line as in this embodiment, an unexpected short circuit failure can be prevented and necessary. It is possible to reduce the number of wires.
  • FIG. 3 is a schematic plan view for explaining the configuration of the magnetic sensor 10B according to the second embodiment of the present invention.
  • the magnetic sensor 10B according to the present embodiment is different from the magnetic sensor 10B according to the first embodiment in that resistance elements R1 and R2 are connected between the first and second magnetic layers 21 and 22 and the ground wiring G, respectively. It is different from the sensor 10A. Since other configurations are the same as those of the magnetic sensor 10A according to the first embodiment, the same elements are denoted by the same reference numerals, and redundant description is omitted.
  • the resistance elements R1 and R2 are interposed therebetween. It doesn't matter.
  • the resistance values of the resistance elements R1 and R2 are preferably lower than the resistance value of the magnetoresistive effect element 11.
  • FIG. 4 is a schematic plan view for explaining the configuration of a magnetic sensor 10C according to the third embodiment of the present invention.
  • the magnetoresistive effect element 11 is divided into two magnetoresistive effect elements 11a and 11b, and another magnetic substance is provided between the magnetoresistive effect element 11a and the magnetoresistive effect element 11b.
  • the magnetic sensor 10A according to the first embodiment is different in that the layer 20 is disposed. Since other configurations are the same as those of the magnetic sensor 10A according to the first embodiment, the same elements are denoted by the same reference numerals, and redundant description is omitted.
  • each of the magnetoresistive effect elements 11a and 11b extends in the y direction, and both ends thereof are connected to each other through a wiring L.
  • the magnetic layer 20 is also an elongated magnetic body extending in the y direction, and is made of the same material as the first and second magnetic layers 21 and 22. By adding such a magnetic layer 20, it is possible to reduce the magnetic resistance between the first magnetic layer 21 and the second magnetic layer 22.
  • the magnetic layer 20 is not connected to any wiring and is in an electrically floating state, but a ground potential GND may be applied through the ground wiring G. Further, instead of dividing the magnetoresistive effect element 11 into the two magnetoresistive effect elements 11a and 11b, the magnetoresistive effect element 11 itself may be folded back into a U shape.
  • FIG. 5 is a schematic plan view for explaining the configuration of a magnetic sensor 10D according to the fourth embodiment of the present invention.
  • the area of the second magnetic layer 22 is smaller than the area of the first magnetic layer 21, and the second magnetic layer 22 is in an electrically floating state. However, it is different from the magnetic sensor 10A according to the first embodiment. Since other configurations are the same as those of the magnetic sensor 10A according to the first embodiment, the same elements are denoted by the same reference numerals, and redundant description is omitted.
  • the second magnetic layer 22 when the area of the second magnetic layer 22 is small, the influence of the external electromagnetic wave is small, and therefore the second magnetic layer 22 may be in a floating state without being connected to any wiring. . According to this, the number of wirings on the substrate 30 can be reduced.
  • FIG. 6 is a schematic plan view for explaining the configuration of a magnetic sensor 10E according to the fifth embodiment of the present invention.
  • the magnetic sensor 10E according to the present embodiment is different from the magnetic sensor 10A according to the first embodiment in that the second magnetic layer 22 is deleted. Since other configurations are the same as those of the magnetic sensor 10A according to the first embodiment, the same elements are denoted by the same reference numerals, and redundant description is omitted.
  • the magnetoresistive element 11 As illustrated in the present embodiment, it is not essential to sandwich the magnetoresistive element 11 between the two magnetic layers 21 and 22 in the present invention, and at least one magnetic layer 21 is adjacent to the magnetoresistive element 11. If it is arranged like this, it is enough.
  • FIG. 7 is a schematic plan view for explaining the configuration of the magnetic sensor 10F according to the sixth embodiment of the present invention.
  • the magnetic sensor 10F according to the present embodiment is different from the magnetic sensor 10A according to the first embodiment in that a magnetoresistive effect element 12 is provided instead of the resistance element R. Since other configurations are the same as those of the magnetic sensor 10A according to the first embodiment, the same elements are denoted by the same reference numerals, and redundant description is omitted.
  • the magnetoresistive effect element 12 is disposed at a position overlapping with the gap between the first magnetic layer 21 and the second magnetic layer 22, similarly to the magnetoresistive effect element 11.
  • the sensitivity direction (fixed magnetization direction) of the magnetoresistive effect element 11 is the direction indicated by the arrow C in FIG. 7 (minus side in the x direction). That is, the fixed magnetization directions of the magnetoresistive effect element 11 and the magnetoresistive effect element 12 are 180 ° different from each other.
  • the change in the resistance value of the magnetoresistive effect element 11 and the change in the resistance value of the magnetoresistive effect element 12 are complementary, the plus side magnetic field and the minus side magnetic field in the x direction Both can be detected and higher detection sensitivity can be obtained.
  • FIG. 8 is a schematic plan view for explaining the configuration of a magnetic sensor 10G according to the seventh embodiment of the present invention.
  • the first magnetic layer 21 is divided into two magnetic layers 21a and 21b
  • the second magnetic layer 22 is divided into two magnetic layers 22a and 22b.
  • the present embodiment is different from the magnetic sensor 10F according to the sixth embodiment. Since the other configuration is the same as that of the magnetic sensor 10F according to the sixth embodiment, the same elements are denoted by the same reference numerals, and redundant description is omitted.
  • the magnetic layers 21a, 21b, 22a, and 22b are all connected to the ground wiring G. For this reason, it becomes possible to acquire the effect similar to the magnetic sensor 10F by 6th Embodiment. Moreover, since both the first and second magnetic layers 21 and 22 are divided in the y direction, the magnetic resistance in the y direction is increased. As a result, it becomes difficult to be affected by the magnetic field in the y direction that is not the detection target, and the directivity is improved.
  • FIG. 9 is a schematic plan view for explaining the configuration of the magnetic sensor 10H according to the eighth embodiment of the present invention.
  • FIG. 10 is a schematic cross-sectional view along the line DD shown in FIG.
  • the magnetic sensor 10H according to the present embodiment is different from the magnetic sensor 10F according to the sixth embodiment in that magnetoresistive elements 13 and 14 and a third magnetic layer 23 are added.
  • the third magnetic layer 23 is connected to the ground wiring G in the same manner as the first and second magnetic layers 21 and 22.
  • the magnetoresistive effect elements 13 and 14 are arranged at a position overlapping the gap between the second magnetic layer 22 and the third magnetic layer 23.
  • the sensitivity directions (fixed magnetization directions) of these four magnetoresistive elements 11 to 14 are all directions indicated by the arrow B in FIG. 9 (plus side in the x direction), and are bridge-connected as shown in FIG. Yes.
  • the magnetoresistive elements 14 and 11 are connected in series, and the output signal OUT1 is output from the signal wiring S1 that is the contact point, and the magnetoresistive effect elements 12 and 13 are connected in series and the signal that is the contact point.
  • An output signal OUT2 is output from the wiring S2.
  • an external magnetic body 40 is disposed on the second magnetic layer 22, and external magnetic bodies 41 and 42 are disposed at both ends in the x direction of the substrate 30.
  • the external magnetic bodies 40 to 42 are blocks made of a soft magnetic material having a high magnetic permeability such as ferrite. Since the other configuration is the same as that of the magnetic sensor 10F according to the sixth embodiment, the same elements are denoted by the same reference numerals, and redundant description is omitted.
  • the external magnetic body 40 has a role of collecting magnetic flux ⁇ in the z direction (perpendicular to the main surface of the substrate 30) and distributing it to the left and right via the second magnetic layer 22. Fulfill. That is, half of the z-direction magnetic flux ⁇ collected by the external magnetic body 40 is bent toward the first magnetic layer 21 via the magnetoresistive effect elements 11 and 12, and the other half is magnetoresistive effect element. Bent to the third magnetic layer 23 side through 13 and 14. The force for bending the magnetic flux is enhanced by using the external magnetic bodies 41 and 42. Since these magnetoresistive elements 11 to 14 are bridge-connected, a potential difference corresponding to the density of the magnetic flux ⁇ is generated between the output signal OUT1 and the output signal OUT2.
  • the magnetic sensor 10H includes the external magnetic body 40 and the four magnetoresistance effect elements 11 to 14 are bridge-connected, so that the magnetic flux ⁇ in the z direction can be detected with high sensitivity. Is possible.
  • the magnetoresistive elements 11 to 14 are formed on the lower insulating layer 31, and the magnetic layers 21 to 23 are formed on the upper insulating layer 32.
  • the positions of the elements 11 to 14 and the magnetic layers 21 to 23 in the z direction are slightly different.
  • the magnetoresistive elements 11 to 14 are arranged at positions slightly offset in the z direction with respect to the gap formed by the magnetic layers 21 to 23, but are formed by the presence of the gap. Since it is located on the magnetic path, it can receive a magnetic flux flowing from one magnetic layer to the other magnetic layer. As described above, the position where the magnetoresistive effect element is provided may be slightly shifted from the gap formed by the two magnetic layers.
  • the width of the magnetoresistive effect elements 11 to 14 in the x direction is set to two magnetic materials as shown in FIG.
  • the gap formed by the layers may be larger than the width in the x direction.
  • the gap formed by the two magnetic layers may be formed in the z direction by using the three insulating layers 31 to 33. That is, the gap need not be planar.
  • the magnetoresistive effect element 11 is arranged in the gap formed by the overlap of the magnetic layer 21 and the magnetic layer 22, and the gap formed by the overlap of the magnetic layer 22 and the magnetic layer 23 is formed.
  • a magnetoresistive effect element 13 is arranged.
  • the magnetic layers 21 and 23 and the magnetic layer 22 may be formed on different planes and do not overlap each other.
  • the gap formed by the two magnetic layers is oblique.
  • the magnetoresistive effect element 11 is disposed in an oblique gap formed between the edge of the magnetic layer 21 and the edge of the magnetic layer 22, and the edge of the magnetic layer 22 and the magnetic body
  • the magnetoresistive element 13 is disposed in an oblique gap formed between the edge of the layer 23.
  • the gap formed by the two magnetic layers may be planar or three-dimensional.
  • the magnetoresistive effect element does not need to be strictly located in the gap, and may be located on the magnetic path formed by the existence of the gap.
  • FIG. 14 is a schematic plan view for explaining the configuration of the magnetic sensor 10I according to the ninth embodiment of the present invention.
  • the second and third magnetic layers 22 and 23 are not directly connected to the ground wiring G, but are connected to the ground wiring G through the first magnetic layer 21. This is different from the magnetic sensor 10H according to the eighth embodiment. Since the other configuration is the same as that of the magnetic sensor 10H according to the eighth embodiment, the same elements are denoted by the same reference numerals, and redundant description is omitted.
  • the present invention it is not essential that all the magnetic layers are directly connected to the power supply wiring such as the ground wiring G, and some of the magnetic layers are replaced with other magnetic layers. It may be connected to the power supply wiring. According to this, since it becomes easy to route power supply wiring such as the ground wiring G, the degree of freedom in design is increased.

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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Abstract

[Problem] To provide a magnetic sensor that prevents noise from being generated by electromagnetic waves from the outside. [Solution] The present invention comprises: a magnetoresistance effect element 11 that is provided upon a substrate and is connected between ground wiring G and signal wiring S; and magnetic layers 21, 22 that are provided upon the substrate so as to be adjacent to the magnetoresistance effect element 11 and are connected to the ground wiring G. Because the magnetic layers that are adjacent to the magnetoresistance effect element are connected to the ground wiring without touching the signal wiring, noise caused by electromagnetic waves that come in from the outside is not directly superimposed on the signal wiring. In addition, because the magnetic layers are connected to power supply wiring, the noise caused by the electromagnetic waves can be released along the power supply wiring.

Description

磁気センサMagnetic sensor
　本発明は磁気センサに関し、特に、基板上に形成された磁気抵抗効果素子及び磁性体層を含む磁気センサに関する。 The present invention relates to a magnetic sensor, and more particularly to a magnetic sensor including a magnetoresistive effect element and a magnetic layer formed on a substrate.
　磁気抵抗効果素子を用いた磁気センサは、電流計や磁気エンコーダなどに広く用いられており、磁束を磁気抵抗効果素子に収束させるための磁性体層を備えることがある。特許文献１に記載された磁気センサは、２つの磁性体層（薄膜ヨーク）によって形成されるギャップに磁気抵抗効果素子を配置し、これによって所定方向の磁束を磁気抵抗効果素子に効率よく印加している。 Magnetic sensors using magnetoresistive elements are widely used in ammeters, magnetic encoders, and the like, and may include a magnetic layer for converging magnetic flux to the magnetoresistive elements. In the magnetic sensor described in Patent Document 1, a magnetoresistive element is arranged in a gap formed by two magnetic layers (thin film yokes), and thereby a magnetic flux in a predetermined direction is efficiently applied to the magnetoresistive element. ing.
特開２００５－２５７６０５号公報JP 2005-257605 A
　しかしながら、特許文献１に記載された磁気センサは、磁性体層を信号配線の一部として利用していることから、外部から飛来する電磁波が磁性体層に入射すると、磁性体層を介して信号配線にノイズが重畳するという問題があった。このような問題を解決するには、磁気抵抗効果素子と磁性体層とを絶縁分離すればよいが、この場合であっても、磁気抵抗効果素子と磁性体層は互いに近接して配置する必要があることから、両者が容量結合し、高周波ノイズが信号配線に重畳することがあった。 However, since the magnetic sensor described in Patent Document 1 uses the magnetic layer as a part of the signal wiring, when an electromagnetic wave flying from the outside enters the magnetic layer, the signal is transmitted through the magnetic layer. There was a problem that noise was superimposed on the wiring. In order to solve such a problem, the magnetoresistive effect element and the magnetic layer may be insulated and separated, but even in this case, the magnetoresistive effect element and the magnetic layer need to be arranged close to each other. Therefore, both of them are capacitively coupled, and high frequency noise may be superimposed on the signal wiring.
　したがって、本発明は、基板上に形成された磁気抵抗効果素子及び磁性体層を含む磁気センサにおいて、外部から飛来する電磁波によるノイズが信号配線に重畳することを防止することを目的とする。 Accordingly, an object of the present invention is to prevent noise caused by electromagnetic waves flying from the outside from being superimposed on a signal wiring in a magnetic sensor including a magnetoresistive effect element and a magnetic layer formed on a substrate.
　本発明による磁気センサは、基板と、前記基板上に設けられ、電源配線と信号配線との間に接続された磁気抵抗効果素子と、前記磁気抵抗効果素子と隣接するよう前記基板上に設けられ、前記電源配線に接続された磁性体層とを備えることを特徴とする。 A magnetic sensor according to the present invention is provided on a substrate, a magnetoresistive effect element provided on the substrate and connected between a power supply wiring and a signal wiring, and adjacent to the magnetoresistive effect element. And a magnetic layer connected to the power supply wiring.
　本発明によれば、磁気抵抗効果素子と隣接する磁性体層が電源配線に接続されていることから、外部から飛来する電磁波によるノイズが信号配線に直接重畳することがない。しかも、磁性体層が電源配線に接続されていることから、電磁波によるノイズを電源配線に逃がすことが可能となる。さらに、磁性体層と磁気抵抗効果素子は互いに同じ電源配線に接続されていることから、配線本数の増大を最小限に抑えることができる。 According to the present invention, since the magnetic layer adjacent to the magnetoresistive effect element is connected to the power supply wiring, noise due to electromagnetic waves flying from the outside does not directly overlap the signal wiring. In addition, since the magnetic layer is connected to the power supply wiring, noise due to electromagnetic waves can be released to the power supply wiring. Furthermore, since the magnetic layer and the magnetoresistive effect element are connected to the same power supply wiring, an increase in the number of wirings can be minimized.
　本発明による磁気センサは、前記磁性体層と前記電源配線との間に接続され、前記磁気抵抗効果素子よりも抵抗値の低い抵抗素子をさらに備えていても構わない。このように、磁性体層は電源配線に直接接続されている必要はなく、磁気抵抗効果素子よりも抵抗値の低い抵抗素子を介して接続されていても構わない。 The magnetic sensor according to the present invention may further include a resistance element connected between the magnetic layer and the power supply wiring and having a resistance value lower than that of the magnetoresistance effect element. As described above, the magnetic layer need not be directly connected to the power supply wiring, and may be connected via a resistance element having a lower resistance value than the magnetoresistive effect element.
　本発明において、前記磁性体層は第１及び第２の磁性体層を含み、前記磁気抵抗効果素子は、前記第１の磁性体層と前記第２の磁性体層との間のギャップによって形成される磁路上に配置されていることが好ましい。これによれば、２つの磁性体層によって効果的な集磁を行うことができるとともに、高い指向性を持たせることが可能となる。 In the present invention, the magnetic layer includes first and second magnetic layers, and the magnetoresistive element is formed by a gap between the first magnetic layer and the second magnetic layer. It is preferable to be disposed on the magnetic path. According to this, effective magnetic collection can be performed by the two magnetic layers, and high directivity can be provided.
　この場合、前記第１の磁性体層は、前記電源配線に接続され、前記第２の磁性体層は、前記電源配線及び前記信号配線の両方から絶縁され、前記第１の磁性体層の面積は、前記第２の磁性体層の面積よりも大きい構成であっても構わない。このように、面積の小さい磁性体層は、外来電磁波の影響を受けにくいため、このような磁性体層については電源配線から分離しても構わない。これによれば、配線本数の増大を抑制することが可能となる。 In this case, the first magnetic layer is connected to the power line, the second magnetic layer is insulated from both the power line and the signal line, and the area of the first magnetic layer May be larger than the area of the second magnetic layer. As described above, since the magnetic layer having a small area is not easily affected by external electromagnetic waves, such a magnetic layer may be separated from the power supply wiring. According to this, an increase in the number of wirings can be suppressed.
　本発明による磁気センサは、前記信号配線と別の電源配線との間に接続された抵抗素子をさらに備えることが好ましい。これによれば、磁気抵抗効果素子の抵抗値の変化を電圧の変化として取り出すことが可能となる。 The magnetic sensor according to the present invention preferably further comprises a resistance element connected between the signal wiring and another power supply wiring. According to this, it becomes possible to take out a change in the resistance value of the magnetoresistive effect element as a change in voltage.
　この場合、前記抵抗素子は別の磁気抵抗効果素子であっても構わない。これによれば、出力信号の振幅を拡大することが可能となる。さらにこの場合、前記磁性体層は第３の磁性体層をさらに含み、前記磁気抵抗効果素子は、前記第１の磁性体層と前記第２の磁性体層との間のギャップによって形成される磁路上、並びに、前記第２の磁性体層と前記第３の磁性体層との間のギャップによって形成される磁路上に配置され、ブリッジ接続された複数の磁気抵抗効果素子からなることが好ましい。これによれば、出力信号の振幅をさらに拡大することが可能となる。 In this case, the resistance element may be another magnetoresistance effect element. As a result, the amplitude of the output signal can be increased. Furthermore, in this case, the magnetic layer further includes a third magnetic layer, and the magnetoresistive element is formed by a gap between the first magnetic layer and the second magnetic layer. It is preferable that the magnetic path includes a plurality of magnetoresistive elements arranged on the magnetic path and bridged by the magnetic path formed by the gap between the second magnetic layer and the third magnetic layer. . This makes it possible to further increase the amplitude of the output signal.
　この場合、前記第２の磁性体層上に配置された外部磁性体をさらに備えることが好ましい。これによれば、基板に対して垂直方向の磁束を効率よく集磁することができるとともに、ブリッジ接続された複数の磁気抵抗効果素子に対して磁束を分配することが可能となる。 In this case, it is preferable to further include an external magnetic body disposed on the second magnetic layer. According to this, it is possible to efficiently collect magnetic flux in the direction perpendicular to the substrate, and to distribute magnetic flux to a plurality of bridge-connected magnetoresistive elements.
　本発明において、前記電源配線はグランド配線であることが好ましい。これによれば、磁性体層の電位を確実に安定させることができるとともに、予期せぬショート不良の発生などを防止することが可能となる。 In the present invention, the power supply wiring is preferably a ground wiring. According to this, it is possible to reliably stabilize the potential of the magnetic layer and to prevent the occurrence of an unexpected short circuit failure.
　このように、本発明によれば、基板上に形成された磁気抵抗効果素子及び磁性体層を含む磁気センサにおいて、外部から飛来する電磁波によるノイズが信号配線に重畳することを効果的に防止することが可能となる。 As described above, according to the present invention, in a magnetic sensor including a magnetoresistive element and a magnetic layer formed on a substrate, it is possible to effectively prevent noise caused by electromagnetic waves flying from the outside from being superimposed on the signal wiring. It becomes possible.
図１は、本発明の第１の実施形態による磁気センサ１０Ａの構成を説明するための略平面図である。FIG. 1 is a schematic plan view for explaining the configuration of the magnetic sensor 10A according to the first embodiment of the present invention. 図２は、図１に示すＡ－Ａ線に沿った略断面図である。FIG. 2 is a schematic cross-sectional view along the line AA shown in FIG. 図３は、本発明の第２の実施形態による磁気センサ１０Ｂの構成を説明するための略平面図である。FIG. 3 is a schematic plan view for explaining the configuration of the magnetic sensor 10B according to the second embodiment of the present invention. 図４は、本発明の第３の実施形態による磁気センサ１０Ｃの構成を説明するための略平面図である。FIG. 4 is a schematic plan view for explaining the configuration of a magnetic sensor 10C according to the third embodiment of the present invention. 図５は、本発明の第４の実施形態による磁気センサ１０Ｄの構成を説明するための略平面図である。FIG. 5 is a schematic plan view for explaining the configuration of a magnetic sensor 10D according to the fourth embodiment of the present invention. 図６は、本発明の第５の実施形態による磁気センサ１０Ｅの構成を説明するための略平面図である。FIG. 6 is a schematic plan view for explaining the configuration of a magnetic sensor 10E according to the fifth embodiment of the present invention. 図７は、本発明の第６の実施形態による磁気センサ１０Ｆの構成を説明するための略平面図である。FIG. 7 is a schematic plan view for explaining the configuration of the magnetic sensor 10F according to the sixth embodiment of the present invention. 図８は、本発明の第７の実施形態による磁気センサ１０Ｇの構成を説明するための略平面図である。FIG. 8 is a schematic plan view for explaining the configuration of a magnetic sensor 10G according to the seventh embodiment of the present invention. 図９は、本発明の第８の実施形態による磁気センサ１０Ｈの構成を説明するための略平面図である。FIG. 9 is a schematic plan view for explaining the configuration of the magnetic sensor 10H according to the eighth embodiment of the present invention. 図１０は、図９に示すＤ－Ｄ線に沿った略断面図である。FIG. 10 is a schematic cross-sectional view along the line DD shown in FIG. 図１１は、磁気センサ１０Ｈの第１の変形例を示す断面図である。FIG. 11 is a cross-sectional view showing a first modification of the magnetic sensor 10H. 図１２は、磁気センサ１０Ｈの第２の変形例を示す断面図である。FIG. 12 is a cross-sectional view showing a second modification of the magnetic sensor 10H. 図１３は、磁気センサ１０Ｈの第３の変形例を示す断面図である。FIG. 13 is a cross-sectional view showing a third modification of the magnetic sensor 10H. 図１４は、本発明の第９の実施形態による磁気センサ１０Ｉの構成を説明するための略平面図である。FIG. 14 is a schematic plan view for explaining the configuration of the magnetic sensor 10I according to the ninth embodiment of the present invention.
　以下、添付図面を参照しながら、本発明の好ましい実施形態について詳細に説明する。 Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
＜第１の実施形態＞
　図１は、本発明の第１の実施形態による磁気センサ１０Ａの構成を説明するための略平面図である。図２は、図１に示すＡ－Ａ線に沿った略断面図である。 <First Embodiment>
FIG. 1 is a schematic plan view for explaining the configuration of the magnetic sensor 10A according to the first embodiment of the present invention. FIG. 2 is a schematic cross-sectional view along the line AA shown in FIG.
　図１及び図２に示すように、本実施形態による磁気センサ１０Ａは、ｘ方向に配列された第１及び第２の磁性体層２１，２２と、平面視で（ｚ方向から見て）第１及び第２の磁性体層２１，２２との間に設けられたギャップと重なる位置に配置された磁気抵抗効果素子１１とを備えている。磁気抵抗効果素子１１は、磁界の向き及び強さに応じて電気抵抗が変化する素子である。本実施形態においては、磁気抵抗効果素子１１の長手方向がｙ方向であり、感度方向（固定磁化方向）は図１及び図２の矢印Ｂが示す方向（ｘ方向におけるプラス側）である。 As shown in FIGS. 1 and 2, the magnetic sensor 10 </ b> A according to the present embodiment includes the first and second magnetic layers 21 and 22 arranged in the x direction and the first (in the z direction) view in plan view. And a magnetoresistive effect element 11 disposed at a position overlapping with a gap provided between the first and second magnetic layers 21 and 22. The magnetoresistive effect element 11 is an element whose electric resistance changes according to the direction and strength of the magnetic field. In the present embodiment, the longitudinal direction of the magnetoresistive effect element 11 is the y direction, and the sensitivity direction (fixed magnetization direction) is the direction indicated by the arrow B in FIGS. 1 and 2 (plus side in the x direction).
　第１及び第２の磁性体層２１，２２は、検出すべき磁束を集磁し、磁束の向きを揃え、これを磁気抵抗効果素子１１に印加する役割を果たす。第１及び第２の磁性体層２１，２２としては、樹脂材料に磁性フィラーが分散された複合磁性材料からなる膜であっても構わないし、ニッケル又はパーマロイなどの軟磁性材料からなる薄膜もしくは箔であっても構わないし、フェライトなどからなる薄膜又はバルクシートであっても構わない。 The first and second magnetic layers 21 and 22 function to collect the magnetic flux to be detected, align the direction of the magnetic flux, and apply this to the magnetoresistive element 11. The first and second magnetic layers 21 and 22 may be a film made of a composite magnetic material in which a magnetic filler is dispersed in a resin material, or a thin film or foil made of a soft magnetic material such as nickel or permalloy. It may be a thin film or a bulk sheet made of ferrite or the like.
　磁気抵抗効果素子１１と第１及び第２の磁性体層２１，２２は、いずれも基板３０上に設けられる。図２に示す例では、基板３０の表面に薄い絶縁層３１が形成され、絶縁層３１の表面に磁気抵抗効果素子１１が形成される。磁気抵抗効果素子１１は別の絶縁層３２で覆われ、絶縁層３２の表面に第１及び第２の磁性体層２１，２２が形成されている。但し、絶縁層３２を省略し、絶縁層３１の表面に磁気抵抗効果素子１１と第１及び第２の磁性体層２１，２２を形成しても構わない。 The magnetoresistive effect element 11 and the first and second magnetic layers 21 and 22 are both provided on the substrate 30. In the example shown in FIG. 2, a thin insulating layer 31 is formed on the surface of the substrate 30, and the magnetoresistive effect element 11 is formed on the surface of the insulating layer 31. The magnetoresistive effect element 11 is covered with another insulating layer 32, and first and second magnetic layers 21 and 22 are formed on the surface of the insulating layer 32. However, the insulating layer 32 may be omitted, and the magnetoresistive element 11 and the first and second magnetic layers 21 and 22 may be formed on the surface of the insulating layer 31.
　磁気抵抗効果素子１１と第１及び第２の磁性体層２１，２２は、ｘ方向に隣接するように配置されている。このため、ｘ方向の磁界を受けると、第１の磁性体層２１から第２の磁性体層２２（或いは、第２の磁性体層２２から第１の磁性体層２１）への磁束が発生し、その際に磁気抵抗効果素子１１を磁束がｘ方向に横切ることになる。これにより、磁気抵抗効果素子１１の抵抗値が磁束の向き及び強さによって変化することになる。 The magnetoresistive effect element 11 and the first and second magnetic layers 21 and 22 are arranged so as to be adjacent to each other in the x direction. Therefore, when receiving a magnetic field in the x direction, a magnetic flux is generated from the first magnetic layer 21 to the second magnetic layer 22 (or from the second magnetic layer 22 to the first magnetic layer 21). At that time, the magnetic flux crosses the magnetoresistive element 11 in the x direction. As a result, the resistance value of the magnetoresistive effect element 11 changes depending on the direction and strength of the magnetic flux.
　図１に示すように、本実施形態においては、磁気抵抗効果素子１１のｙ方向における一端がグランド配線Ｇに接続され、他端が信号配線Ｓに接続されている。グランド配線Ｇは、グランド電位ＧＮＤが供給される電源配線である。また、電源電位Ｖｃｃが供給される電源配線Ｐと信号配線Ｓとの間には、抵抗素子Ｒが接続されている。これにより、信号配線Ｓに現れる出力信号ＯＵＴは、磁気抵抗効果素子１１の抵抗値によって変化することになり、磁界の向き及び強さを検出することが可能となる。抵抗素子Ｒは、抵抗値がほぼ一定である金属皮膜抵抗であっても構わないし、磁気抵抗効果素子のように抵抗値が変化するものであっても構わない。当然ながら、第１及び第２の磁性体層２１，２２と信号配線Ｓは、直接接続されないよう分離しておく必要がある。 As shown in FIG. 1, in this embodiment, one end of the magnetoresistive effect element 11 in the y direction is connected to the ground wiring G, and the other end is connected to the signal wiring S. The ground wiring G is a power supply wiring to which the ground potential GND is supplied. Further, a resistance element R is connected between the power supply wiring P to which the power supply potential Vcc is supplied and the signal wiring S. As a result, the output signal OUT appearing on the signal wiring S changes depending on the resistance value of the magnetoresistive effect element 11, and the direction and strength of the magnetic field can be detected. The resistance element R may be a metal film resistance having a substantially constant resistance value, or may be a resistance value changing like a magnetoresistance effect element. Naturally, the first and second magnetic layers 21 and 22 and the signal wiring S need to be separated so as not to be directly connected.
　さらに、本実施形態においては、第１及び第２の磁性体層２１，２２がグランド配線Ｇに接続されており、これにより第１及び第２の磁性体層２１，２２がグランド電位ＧＮＤに固定されている。このため、外部から飛来する電磁波を受けても第１及び第２の磁性体層２１，２２の電位がほとんど変化しないため、外来電磁波によって出力信号ＯＵＴにノイズが発生することがない。 Further, in the present embodiment, the first and second magnetic layers 21 and 22 are connected to the ground wiring G, whereby the first and second magnetic layers 21 and 22 are fixed to the ground potential GND. Has been. For this reason, since the potentials of the first and second magnetic layers 21 and 22 hardly change even when an electromagnetic wave flying from the outside is received, no noise is generated in the output signal OUT due to the external electromagnetic wave.
　このように、本実施形態による磁気センサ１０Ａは、磁気抵抗効果素子１１に隣接して設けられた第１及び第２の磁性体層２１，２２がグランド電位ＧＮＤに固定されていることから、外来電磁波に起因するノイズを抑制することが可能となる。尚、本実施形態においては第１及び第２の磁性体層２１，２２にグランド電位ＧＮＤを与えているが、本発明がこれに限定されるものではなく、固定電位であればグランド電位ＧＮＤに限定されるものではない。したがって、グランド電位ＧＮＤを与える代わりに、電源配線Ｐを介して電源電位Ｖｃｃを与えても構わない。しかしながら、本発明による効果を高めるためには、よりインピーダンスの低い電源配線に接続することが有効であるため、グランド電位ＧＮＤを与えることが最も好ましい。 As described above, in the magnetic sensor 10A according to the present embodiment, the first and second magnetic layers 21 and 22 provided adjacent to the magnetoresistive element 11 are fixed to the ground potential GND. It is possible to suppress noise caused by electromagnetic waves. In the present embodiment, the ground potential GND is applied to the first and second magnetic layers 21 and 22. However, the present invention is not limited to this, and the ground potential GND is set to a fixed potential. It is not limited. Therefore, instead of applying the ground potential GND, the power supply potential Vcc may be supplied through the power supply wiring P. However, in order to enhance the effect of the present invention, it is effective to connect to a power supply wiring having a lower impedance, so it is most preferable to apply the ground potential GND.
　また、本実施形態においては、磁気抵抗効果素子１１と第１及び第２の磁性体層２１，２２を同じ電源配線（グランド配線Ｇ）に接続しているが、本発明においてこの点は必須でない。したがって、例えば、磁気抵抗効果素子１１をグランド配線Ｇに接続し、第１及び第２の磁性体層２１，２２を電源配線Ｐに接続しても構わない。しかしながら、本実施形態のように磁気抵抗効果素子１１と第１及び第２の磁性体層２１，２２を同じ電源配線に接続すれば、予期せぬショート不良などを防止することができるとともに、必要な配線の本数を低減することが可能となる。 In the present embodiment, the magnetoresistive effect element 11 and the first and second magnetic layers 21 and 22 are connected to the same power supply wiring (ground wiring G), but this point is not essential in the present invention. . Therefore, for example, the magnetoresistive effect element 11 may be connected to the ground wiring G, and the first and second magnetic layers 21 and 22 may be connected to the power supply wiring P. However, if the magnetoresistive effect element 11 and the first and second magnetic layers 21 and 22 are connected to the same power supply line as in this embodiment, an unexpected short circuit failure can be prevented and necessary. It is possible to reduce the number of wires.
＜第２の実施形態＞
　図３は、本発明の第２の実施形態による磁気センサ１０Ｂの構成を説明するための略平面図である。 <Second Embodiment>
FIG. 3 is a schematic plan view for explaining the configuration of the magnetic sensor 10B according to the second embodiment of the present invention.
　本実施形態による磁気センサ１０Ｂは、第１及び第２の磁性体層２１，２２とグランド配線Ｇとの間に抵抗素子Ｒ１，Ｒ２がそれぞれ接続されている点において、第１の実施形態による磁気センサ１０Ａと相違している。その他の構成は第１の実施形態による磁気センサ１０Ａと同一であることから、同一の要素には同一の符号を付し、重複する説明は省略する。 The magnetic sensor 10B according to the present embodiment is different from the magnetic sensor 10B according to the first embodiment in that resistance elements R1 and R2 are connected between the first and second magnetic layers 21 and 22 and the ground wiring G, respectively. It is different from the sensor 10A. Since other configurations are the same as those of the magnetic sensor 10A according to the first embodiment, the same elements are denoted by the same reference numerals, and redundant description is omitted.
　本実施形態が例示するように、本発明において第１及び第２の磁性体層２１，２２をグランド配線Ｇに直接接続することは必須でなく、両者間に抵抗素子Ｒ１，Ｒ２が介在していても構わない。このような抵抗素子Ｒ１，Ｒ２を介在させれば、外来電磁波に起因するノイズがグランド配線Ｇを介して磁気抵抗効果素子１１に回り込みにくくなるという利点がある。尚、外来電磁波の影響を十分に低減するためには、抵抗素子Ｒ１，Ｒ２の抵抗値は磁気抵抗効果素子１１の抵抗値よりも低いことが好ましい。 As illustrated in the present embodiment, it is not essential to directly connect the first and second magnetic layers 21 and 22 to the ground wiring G in the present invention, and the resistance elements R1 and R2 are interposed therebetween. It doesn't matter. When such resistance elements R1 and R2 are interposed, there is an advantage that noise caused by an external electromagnetic wave hardly enters the magnetoresistive effect element 11 via the ground wiring G. In order to sufficiently reduce the influence of external electromagnetic waves, the resistance values of the resistance elements R1 and R2 are preferably lower than the resistance value of the magnetoresistive effect element 11.
＜第３の実施形態＞
　図４は、本発明の第３の実施形態による磁気センサ１０Ｃの構成を説明するための略平面図である。 <Third Embodiment>
FIG. 4 is a schematic plan view for explaining the configuration of a magnetic sensor 10C according to the third embodiment of the present invention.
　本実施形態による磁気センサ１０Ｃは、磁気抵抗効果素子１１が２つの磁気抵抗効果素子１１ａ，１１ｂに分割されているとともに、磁気抵抗効果素子１１ａと磁気抵抗効果素子１１ｂとの間に別の磁性体層２０が配置されている点において、第１の実施形態による磁気センサ１０Ａと相違している。その他の構成は第１の実施形態による磁気センサ１０Ａと同一であることから、同一の要素には同一の符号を付し、重複する説明は省略する。 In the magnetic sensor 10C according to the present embodiment, the magnetoresistive effect element 11 is divided into two magnetoresistive effect elements 11a and 11b, and another magnetic substance is provided between the magnetoresistive effect element 11a and the magnetoresistive effect element 11b. The magnetic sensor 10A according to the first embodiment is different in that the layer 20 is disposed. Since other configurations are the same as those of the magnetic sensor 10A according to the first embodiment, the same elements are denoted by the same reference numerals, and redundant description is omitted.
　図４に示すように、磁気抵抗効果素子１１ａ，１１ｂはいずれもｙ方向に延在しており、両者の端部が配線Ｌを介して互いに接続されている。これにより、１個の磁気抵抗効果素子１１を用いる場合と比べて、磁界による抵抗値の変化をより大きくすることができる。また、磁性体層２０もｙ方向に延在する細長い磁性体であり、第１及び第２の磁性体層２１，２２と同じ材料によって構成される。このような磁性体層２０を追加することによって、第１の磁性体層２１と第２の磁性体層２２との間の磁気抵抗を低減することが可能となる。 As shown in FIG. 4, each of the magnetoresistive effect elements 11a and 11b extends in the y direction, and both ends thereof are connected to each other through a wiring L. Thereby, compared with the case where the one magnetoresistive effect element 11 is used, the change of the resistance value by a magnetic field can be enlarged more. The magnetic layer 20 is also an elongated magnetic body extending in the y direction, and is made of the same material as the first and second magnetic layers 21 and 22. By adding such a magnetic layer 20, it is possible to reduce the magnetic resistance between the first magnetic layer 21 and the second magnetic layer 22.
　本実施形態においては磁性体層２０がいずれの配線にも接続されておらず、電気的にフローティング状態であるが、グランド配線Ｇを介してグランド電位ＧＮＤを与えても構わない。また、磁気抵抗効果素子１１を２つの磁気抵抗効果素子１１ａ，１１ｂに分割するのではなく、磁気抵抗効果素子１１自体をＵ字型に折り返しても構わない。 In the present embodiment, the magnetic layer 20 is not connected to any wiring and is in an electrically floating state, but a ground potential GND may be applied through the ground wiring G. Further, instead of dividing the magnetoresistive effect element 11 into the two magnetoresistive effect elements 11a and 11b, the magnetoresistive effect element 11 itself may be folded back into a U shape.
＜第４の実施形態＞
　図５は、本発明の第４の実施形態による磁気センサ１０Ｄの構成を説明するための略平面図である。 <Fourth Embodiment>
FIG. 5 is a schematic plan view for explaining the configuration of a magnetic sensor 10D according to the fourth embodiment of the present invention.
　本実施形態による磁気センサ１０Ｄは、第２の磁性体層２２の面積が第１の磁性体層２１の面積よりも小さく、且つ、第２の磁性体層２２が電気的にフローティング状態である点において、第１の実施形態による磁気センサ１０Ａと相違している。その他の構成は第１の実施形態による磁気センサ１０Ａと同一であることから、同一の要素には同一の符号を付し、重複する説明は省略する。 In the magnetic sensor 10D according to the present embodiment, the area of the second magnetic layer 22 is smaller than the area of the first magnetic layer 21, and the second magnetic layer 22 is in an electrically floating state. However, it is different from the magnetic sensor 10A according to the first embodiment. Since other configurations are the same as those of the magnetic sensor 10A according to the first embodiment, the same elements are denoted by the same reference numerals, and redundant description is omitted.
　このように、第２の磁性体層２２の面積が小さい場合には、外来電磁波の影響も小さくなるため、第２の磁性体層２２をいずれの配線にも接続せずフローティング状態としても構わない。これによれば、基板３０上における配線本数を削減することが可能となる。 As described above, when the area of the second magnetic layer 22 is small, the influence of the external electromagnetic wave is small, and therefore the second magnetic layer 22 may be in a floating state without being connected to any wiring. . According to this, the number of wirings on the substrate 30 can be reduced.
＜第５の実施形態＞
　図６は、本発明の第５の実施形態による磁気センサ１０Ｅの構成を説明するための略平面図である。 <Fifth Embodiment>
FIG. 6 is a schematic plan view for explaining the configuration of a magnetic sensor 10E according to the fifth embodiment of the present invention.
　本実施形態による磁気センサ１０Ｅは、第２の磁性体層２２が削除されている点において、第１の実施形態による磁気センサ１０Ａと相違している。その他の構成は第１の実施形態による磁気センサ１０Ａと同一であることから、同一の要素には同一の符号を付し、重複する説明は省略する。 The magnetic sensor 10E according to the present embodiment is different from the magnetic sensor 10A according to the first embodiment in that the second magnetic layer 22 is deleted. Since other configurations are the same as those of the magnetic sensor 10A according to the first embodiment, the same elements are denoted by the same reference numerals, and redundant description is omitted.
　本実施形態が例示するように、本発明において磁気抵抗効果素子１１を２つの磁性体層２１，２２によって挟み込むことは必須でなく、少なくとも１つの磁性体層２１が磁気抵抗効果素子１１と隣接するように配置されていれば足りる。 As illustrated in the present embodiment, it is not essential to sandwich the magnetoresistive element 11 between the two magnetic layers 21 and 22 in the present invention, and at least one magnetic layer 21 is adjacent to the magnetoresistive element 11. If it is arranged like this, it is enough.
＜第６の実施形態＞
　図７は、本発明の第６の実施形態による磁気センサ１０Ｆの構成を説明するための略平面図である。 <Sixth Embodiment>
FIG. 7 is a schematic plan view for explaining the configuration of the magnetic sensor 10F according to the sixth embodiment of the present invention.
　本実施形態による磁気センサ１０Ｆは、抵抗素子Ｒの代わりに磁気抵抗効果素子１２が設けられている点において、第１の実施形態による磁気センサ１０Ａと相違している。その他の構成は第１の実施形態による磁気センサ１０Ａと同一であることから、同一の要素には同一の符号を付し、重複する説明は省略する。 The magnetic sensor 10F according to the present embodiment is different from the magnetic sensor 10A according to the first embodiment in that a magnetoresistive effect element 12 is provided instead of the resistance element R. Since other configurations are the same as those of the magnetic sensor 10A according to the first embodiment, the same elements are denoted by the same reference numerals, and redundant description is omitted.
　磁気抵抗効果素子１２は、磁気抵抗効果素子１１と同様、第１の磁性体層２１と第２の磁性体層２２との間のギャップと重なる位置に配置されている。磁気抵抗効果素子１１の感度方向（固定磁化方向）は、図７の矢印Ｃが示す方向（ｘ方向におけるマイナス側）である。つまり、磁気抵抗効果素子１１と磁気抵抗効果素子１２の固定磁化方向は、互いに１８０°相違している。 The magnetoresistive effect element 12 is disposed at a position overlapping with the gap between the first magnetic layer 21 and the second magnetic layer 22, similarly to the magnetoresistive effect element 11. The sensitivity direction (fixed magnetization direction) of the magnetoresistive effect element 11 is the direction indicated by the arrow C in FIG. 7 (minus side in the x direction). That is, the fixed magnetization directions of the magnetoresistive effect element 11 and the magnetoresistive effect element 12 are 180 ° different from each other.
　このような構成によれば、磁気抵抗効果素子１１の抵抗値の変化と磁気抵抗効果素子１２の抵抗値の変化が相補的となることから、ｘ方向におけるプラス側の磁界及びマイナス側の磁界の両方を検出することができるとともに、より高い検出感度を得ることが可能となる。 According to such a configuration, since the change in the resistance value of the magnetoresistive effect element 11 and the change in the resistance value of the magnetoresistive effect element 12 are complementary, the plus side magnetic field and the minus side magnetic field in the x direction Both can be detected and higher detection sensitivity can be obtained.
＜第７の実施形態＞
　図８は、本発明の第７の実施形態による磁気センサ１０Ｇの構成を説明するための略平面図である。 <Seventh Embodiment>
FIG. 8 is a schematic plan view for explaining the configuration of a magnetic sensor 10G according to the seventh embodiment of the present invention.
　本実施形態による磁気センサ１０Ｇは、第１の磁性体層２１が２つの磁性体層２１ａ，２１ｂに分割されており、第２の磁性体層２２が２つの磁性体層２２ａ，２２ｂに分割されている点において、第６の実施形態による磁気センサ１０Ｆと相違している。その他の構成は第６の実施形態による磁気センサ１０Ｆと同一であることから、同一の要素には同一の符号を付し、重複する説明は省略する。 In the magnetic sensor 10G according to the present embodiment, the first magnetic layer 21 is divided into two magnetic layers 21a and 21b, and the second magnetic layer 22 is divided into two magnetic layers 22a and 22b. However, the present embodiment is different from the magnetic sensor 10F according to the sixth embodiment. Since the other configuration is the same as that of the magnetic sensor 10F according to the sixth embodiment, the same elements are denoted by the same reference numerals, and redundant description is omitted.
　本実施形態においても、磁性体層２１ａ，２１ｂ，２２ａ，２２ｂは全てグランド配線Ｇに接続されている。このため、第６の実施形態による磁気センサ１０Ｆと同様の効果を得ることが可能となる。しかも、第１及び第２の磁性体層２１，２２がいずれもｙ方向に分断されているため、ｙ方向における磁気抵抗が高くなる。その結果、検出対象外であるｙ方向の磁界の影響を受けにくくなり、指向性が高められる。 Also in this embodiment, the magnetic layers 21a, 21b, 22a, and 22b are all connected to the ground wiring G. For this reason, it becomes possible to acquire the effect similar to the magnetic sensor 10F by 6th Embodiment. Moreover, since both the first and second magnetic layers 21 and 22 are divided in the y direction, the magnetic resistance in the y direction is increased. As a result, it becomes difficult to be affected by the magnetic field in the y direction that is not the detection target, and the directivity is improved.
＜第８の実施形態＞
　図９は、本発明の第８の実施形態による磁気センサ１０Ｈの構成を説明するための略平面図である。図１０は、図９に示すＤ－Ｄ線に沿った略断面図である。 <Eighth Embodiment>
FIG. 9 is a schematic plan view for explaining the configuration of the magnetic sensor 10H according to the eighth embodiment of the present invention. FIG. 10 is a schematic cross-sectional view along the line DD shown in FIG.
　本実施形態による磁気センサ１０Ｈは、磁気抵抗効果素子１３，１４と第３の磁性体層２３が追加されている点において、第６の実施形態による磁気センサ１０Ｆと相違している。第３の磁性体層２３は、第１及び第２の磁性体層２１，２２と同様、グランド配線Ｇに接続されている。磁気抵抗効果素子１３，１４は、第２の磁性体層２２と第３の磁性体層２３との間のギャップと重なる位置に配置されている。これら４つの磁気抵抗効果素子１１～１４の感度方向（固定磁化方向）は、いずれも図９の矢印Ｂが示す方向（ｘ方向におけるプラス側）であり、図９に示すようにブリッジ接続されている。つまり、磁気抵抗効果素子１４，１１が直列に接続され、その接点である信号配線Ｓ１から出力信号ＯＵＴ１が出力されるとともに、磁気抵抗効果素子１２，１３が直列に接続され、その接点である信号配線Ｓ２から出力信号ＯＵＴ２が出力される。 The magnetic sensor 10H according to the present embodiment is different from the magnetic sensor 10F according to the sixth embodiment in that magnetoresistive elements 13 and 14 and a third magnetic layer 23 are added. The third magnetic layer 23 is connected to the ground wiring G in the same manner as the first and second magnetic layers 21 and 22. The magnetoresistive effect elements 13 and 14 are arranged at a position overlapping the gap between the second magnetic layer 22 and the third magnetic layer 23. The sensitivity directions (fixed magnetization directions) of these four magnetoresistive elements 11 to 14 are all directions indicated by the arrow B in FIG. 9 (plus side in the x direction), and are bridge-connected as shown in FIG. Yes. That is, the magnetoresistive elements 14 and 11 are connected in series, and the output signal OUT1 is output from the signal wiring S1 that is the contact point, and the magnetoresistive effect elements 12 and 13 are connected in series and the signal that is the contact point. An output signal OUT2 is output from the wiring S2.
　また、第２の磁性体層２２上には外部磁性体４０が配置されており、基板３０のｘ方向における両端には外部磁性体４１，４２が配置されている。外部磁性体４０～４２は、フェライトなど透磁率の高い軟磁性材料からなるブロックである。その他の構成は第６の実施形態による磁気センサ１０Ｆと同一であることから、同一の要素には同一の符号を付し、重複する説明は省略する。 Further, an external magnetic body 40 is disposed on the second magnetic layer 22, and external magnetic bodies 41 and 42 are disposed at both ends in the x direction of the substrate 30. The external magnetic bodies 40 to 42 are blocks made of a soft magnetic material having a high magnetic permeability such as ferrite. Since the other configuration is the same as that of the magnetic sensor 10F according to the sixth embodiment, the same elements are denoted by the same reference numerals, and redundant description is omitted.
　図１０に示すように、外部磁性体４０はｚ方向（基板３０の主面に対して垂直方向）の磁束φを集め、これを第２の磁性体層２２を介して左右に分配する役割を果たす。つまり、外部磁性体４０によって集められたｚ方向の磁束φは、半分が磁気抵抗効果素子１１，１２を介して第１の磁性体層２１側に曲げられるとともに、残りの半分が磁気抵抗効果素子１３，１４を介して第３の磁性体層２３側に曲げられる。磁束を曲げる力は、外部磁性体４１，４２を用いることによって強められる。そして、これら磁気抵抗効果素子１１～１４がブリッジ接続されていることから、出力信号ＯＵＴ１と出力信号ＯＵＴ２との間には、磁束φの密度に応じた電位差が生じることになる。 As shown in FIG. 10, the external magnetic body 40 has a role of collecting magnetic flux φ in the z direction (perpendicular to the main surface of the substrate 30) and distributing it to the left and right via the second magnetic layer 22. Fulfill. That is, half of the z-direction magnetic flux φ collected by the external magnetic body 40 is bent toward the first magnetic layer 21 via the magnetoresistive effect elements 11 and 12, and the other half is magnetoresistive effect element. Bent to the third magnetic layer 23 side through 13 and 14. The force for bending the magnetic flux is enhanced by using the external magnetic bodies 41 and 42. Since these magnetoresistive elements 11 to 14 are bridge-connected, a potential difference corresponding to the density of the magnetic flux φ is generated between the output signal OUT1 and the output signal OUT2.
　このように、本実施形態による磁気センサ１０Ｈは、外部磁性体４０を備えるとともに４つの磁気抵抗効果素子１１～１４がブリッジ接続されていることから、ｚ方向の磁束φを高感度に検出することが可能となる。 As described above, the magnetic sensor 10H according to the present embodiment includes the external magnetic body 40 and the four magnetoresistance effect elements 11 to 14 are bridge-connected, so that the magnetic flux φ in the z direction can be detected with high sensitivity. Is possible.
　尚、図１０に示すように、磁気抵抗効果素子１１～１４は下層の絶縁層３１上に形成され、磁性体層２１～２３は上層の絶縁層３２上に形成されているため、磁気抵抗効果素子１１～１４と磁性体層２１～２３のｚ方向における位置は僅かに相違する。このため、磁気抵抗効果素子１１～１４は、磁性体層２１～２３によって形成されるギャップに対してｚ方向に僅かにオフセットした位置に配置されることになるが、ギャップの存在によって形成される磁路上に位置していることから、一方の磁性体層から他方の磁性体層へ流れる磁束を受けることができる。このように、磁気抵抗効果素子を設ける位置は、２つの磁性体層によって形成されるギャップから僅かにずれていても構わない。このように、磁気抵抗効果素子１１～１４と磁性体層２１～２３を異なる層に形成する場合、図１１に示すように、磁気抵抗効果素子１１～１４のｘ方向における幅を２つの磁性体層によって形成されるギャップのｘ方向における幅よりも大きくしても構わない。 As shown in FIG. 10, the magnetoresistive elements 11 to 14 are formed on the lower insulating layer 31, and the magnetic layers 21 to 23 are formed on the upper insulating layer 32. The positions of the elements 11 to 14 and the magnetic layers 21 to 23 in the z direction are slightly different. For this reason, the magnetoresistive elements 11 to 14 are arranged at positions slightly offset in the z direction with respect to the gap formed by the magnetic layers 21 to 23, but are formed by the presence of the gap. Since it is located on the magnetic path, it can receive a magnetic flux flowing from one magnetic layer to the other magnetic layer. As described above, the position where the magnetoresistive effect element is provided may be slightly shifted from the gap formed by the two magnetic layers. Thus, when the magnetoresistive effect elements 11 to 14 and the magnetic material layers 21 to 23 are formed in different layers, the width of the magnetoresistive effect elements 11 to 14 in the x direction is set to two magnetic materials as shown in FIG. The gap formed by the layers may be larger than the width in the x direction.
　また、図１２に示すように、３つの絶縁層３１～３３を用いることによって、２つの磁性体層によって形成されるギャップをｚ方向に形成しても構わない。つまり、ギャップは平面的なものである必要はない。図１２に示す例では、磁性体層２１と磁性体層２２の重なりによって形成されるギャップに磁気抵抗効果素子１１が配置され、磁性体層２２と磁性体層２３の重なりによって形成されるギャップに磁気抵抗効果素子１３が配置されている。 In addition, as shown in FIG. 12, the gap formed by the two magnetic layers may be formed in the z direction by using the three insulating layers 31 to 33. That is, the gap need not be planar. In the example shown in FIG. 12, the magnetoresistive effect element 11 is arranged in the gap formed by the overlap of the magnetic layer 21 and the magnetic layer 22, and the gap formed by the overlap of the magnetic layer 22 and the magnetic layer 23 is formed. A magnetoresistive effect element 13 is arranged.
　さらに、図１３に示すように、磁性体層２１，２３と磁性体層２２が互いに異なる平面に形成され、且つ、互いに重なりを有していない構成であっても構わない。この場合、２つの磁性体層によって形成されるギャップは斜め方向となる。図１３に示す例では、磁性体層２１のエッジと磁性体層２２のエッジとの間に形成される斜め方向のギャップに磁気抵抗効果素子１１が配置され、磁性体層２２のエッジと磁性体層２３のエッジとの間に形成される斜め方向のギャップに磁気抵抗効果素子１３が配置されている。 Furthermore, as shown in FIG. 13, the magnetic layers 21 and 23 and the magnetic layer 22 may be formed on different planes and do not overlap each other. In this case, the gap formed by the two magnetic layers is oblique. In the example shown in FIG. 13, the magnetoresistive effect element 11 is disposed in an oblique gap formed between the edge of the magnetic layer 21 and the edge of the magnetic layer 22, and the edge of the magnetic layer 22 and the magnetic body The magnetoresistive element 13 is disposed in an oblique gap formed between the edge of the layer 23.
　図１０～図１３が例示するように、２つの磁性体層によって形成されるギャップは、平面的なものであっても構わないし、立体的なものであっても構わない。また、磁気抵抗効果素子は、厳密にギャップ内に位置している必要はなく、ギャップの存在によって形成される磁路上に位置していれば足りる。 As illustrated in FIGS. 10 to 13, the gap formed by the two magnetic layers may be planar or three-dimensional. In addition, the magnetoresistive effect element does not need to be strictly located in the gap, and may be located on the magnetic path formed by the existence of the gap.
＜第９の実施形態＞
　図１４は、本発明の第９の実施形態による磁気センサ１０Ｉの構成を説明するための略平面図である。 <Ninth Embodiment>
FIG. 14 is a schematic plan view for explaining the configuration of the magnetic sensor 10I according to the ninth embodiment of the present invention.
　本実施形態による磁気センサ１０Ｉは、第２及び第３の磁性体層２２，２３がグランド配線Ｇに直接接続されているのではなく、第１の磁性体層２１を介してグランド配線Ｇに接続されている点において、第８の実施形態による磁気センサ１０Ｈと相違している。その他の構成は第８の実施形態による磁気センサ１０Ｈと同一であることから、同一の要素には同一の符号を付し、重複する説明は省略する。 In the magnetic sensor 10I according to the present embodiment, the second and third magnetic layers 22 and 23 are not directly connected to the ground wiring G, but are connected to the ground wiring G through the first magnetic layer 21. This is different from the magnetic sensor 10H according to the eighth embodiment. Since the other configuration is the same as that of the magnetic sensor 10H according to the eighth embodiment, the same elements are denoted by the same reference numerals, and redundant description is omitted.
　本実施形態が例示するように、本発明において全ての磁性体層がグランド配線Ｇなどの電源配線に直接接続されていることは必須でなく、一部の磁性体層が他の磁性体層を介して電源配線に接続されていても構わない。これによれば、グランド配線Ｇなどの電源配線の引き回しが容易となるため、設計自由度が高められる。 As illustrated in this embodiment, in the present invention, it is not essential that all the magnetic layers are directly connected to the power supply wiring such as the ground wiring G, and some of the magnetic layers are replaced with other magnetic layers. It may be connected to the power supply wiring. According to this, since it becomes easy to route power supply wiring such as the ground wiring G, the degree of freedom in design is increased.
　以上、本発明の好ましい実施形態について説明したが、本発明は、上記の実施形態に限定されることなく、本発明の主旨を逸脱しない範囲で種々の変更が可能であり、それらも本発明の範囲内に包含されるものであることはいうまでもない。 The preferred embodiments of the present invention have been described above, but the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit of the present invention. Needless to say, it is included in the range.
１０Ａ～１０Ｉ　　磁気センサ
１１～１４，１１ａ，１１ｂ　　磁気抵抗効果素子
２０～２３，２１ａ，２１ｂ，２２ａ，２２ｂ　　磁性体層
３０　　基板
３１～３３　　絶縁層
４０～４２　　外部磁性体
Ｇ　　グランド配線
Ｌ　　配線
Ｐ　　電源配線
Ｒ，Ｒ１，Ｒ２　　抵抗素子
Ｓ，Ｓ１，Ｓ２　　信号配線
φ　　磁束 10A to 10I Magnetic sensors 11 to 14, 11a and 11b Magnetoresistive elements 20 to 23, 21a, 21b, 22a and 22b Magnetic layer 30 Substrate 31 to 33 Insulating layers 40 to 42 External magnetic body G Ground wiring L Wiring P Power supply Wiring R, R1, R2 Resistance element S, S1, S2 Signal wiring φ Magnetic flux

Claims (9)

  1. 　基板と、
    　前記基板上に設けられ、電源配線と信号配線との間に接続された磁気抵抗効果素子と、
    　前記磁気抵抗効果素子と隣接するよう前記基板上に設けられ、前記電源配線に接続された磁性体層と、を備えることを特徴とする磁気センサ。     A substrate,
    A magnetoresistive element provided on the substrate and connected between a power supply wiring and a signal wiring;
    And a magnetic layer provided on the substrate so as to be adjacent to the magnetoresistive element and connected to the power supply wiring.
  2. 　前記磁性体層と前記電源配線との間に接続され、前記磁気抵抗効果素子よりも抵抗値の低い抵抗素子をさらに備えることを特徴とする請求項１に記載の磁気センサ。 The magnetic sensor according to claim 1, further comprising a resistance element connected between the magnetic layer and the power supply wiring and having a resistance value lower than that of the magnetoresistance effect element.
  3. 　前記磁性体層は第１及び第２の磁性体層を含み、
    　前記磁気抵抗効果素子は、前記第１の磁性体層と前記第２の磁性体層との間のギャップによって形成される磁路上に配置されていることを特徴とする請求項１又は２に記載の磁気センサ。     The magnetic layer includes first and second magnetic layers,
    The said magnetoresistive effect element is arrange | positioned on the magnetic path formed by the gap between the said 1st magnetic body layer and the said 2nd magnetic body layer, It is characterized by the above-mentioned. Magnetic sensor.
  4. 　前記第１の磁性体層は、前記電源配線に接続され、
    　前記第２の磁性体層は、前記電源配線及び前記信号配線の両方から絶縁され、
    　前記第１の磁性体層の面積は、前記第２の磁性体層の面積よりも大きいことを特徴とする請求項３に記載の磁気センサ。     The first magnetic layer is connected to the power supply wiring,
    The second magnetic layer is insulated from both the power supply wiring and the signal wiring,
    The magnetic sensor according to claim 3, wherein an area of the first magnetic layer is larger than an area of the second magnetic layer.
  5. 　前記信号配線と別の電源配線との間に接続された抵抗素子をさらに備えることを特徴とする請求項３に記載の磁気センサ。 The magnetic sensor according to claim 3, further comprising a resistance element connected between the signal wiring and another power supply wiring.
  6. 　前記抵抗素子は、別の磁気抵抗効果素子であることを特徴とする請求項５に記載の磁気センサ。 6. The magnetic sensor according to claim 5, wherein the resistance element is another magnetoresistance effect element.
  7. 　前記磁性体層は第３の磁性体層をさらに含み、
    　前記磁気抵抗効果素子は、前記第１の磁性体層と前記第２の磁性体層との間のギャップによって形成される磁路上、並びに、前記第２の磁性体層と前記第３の磁性体層との間のギャップによって形成される磁路上に配置され、ブリッジ接続された複数の磁気抵抗効果素子からなることを特徴とする請求項６に記載の磁気センサ。     The magnetic layer further includes a third magnetic layer,
    The magnetoresistive element includes a magnetic path formed by a gap between the first magnetic layer and the second magnetic layer, and the second magnetic layer and the third magnetic body. The magnetic sensor according to claim 6, comprising a plurality of magnetoresistive effect elements arranged on a magnetic path formed by a gap between the layers and bridge-connected.
  8. 　前記第２の磁性体層上に配置された外部磁性体をさらに備えることを特徴とする請求項７に記載の磁気センサ。 The magnetic sensor according to claim 7, further comprising an external magnetic body disposed on the second magnetic layer.
  9. 　前記電源配線は、グランド配線であることを特徴とする請求項１乃至８のいずれか一項に記載の磁気センサ。 The magnetic sensor according to claim 1, wherein the power supply wiring is a ground wiring.
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JP2009276159A (en) * 2008-05-14 2009-11-26 Sae Magnetics (Hk) Ltd Magnetic sensor
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Publication number Priority date Publication date Assignee Title
JP2022088883A (en) * 2020-12-03 2022-06-15 株式会社東芝 Magnetic sensor and inspection device
JP7393319B2 (en) 2020-12-03 2023-12-06 株式会社東芝 Magnetic sensor and inspection equipment

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