JP7099438B2 - Magnetic sensor - Google Patents

Description

The present invention relates to a magnetic sensor, and more particularly to a magnetic sensor including a magnetoresistive element and a magnetic material layer formed on a substrate.

A magnetic sensor using a magnetoresistive sensor is widely used in a current meter, a magnetic encoder, and the like, and may be provided with a magnetic material layer for converging a magnetic flux on the magnetoresistive element. In the magnetic sensor described in Patent Document 1, a magnetoresistive effect element is arranged in a gap formed by two magnetic material layers (thin film yokes), whereby a magnetic flux in a predetermined direction is efficiently applied to the magnetic resistance effect element. ing.

Japanese Unexamined Patent Publication No. 2005-257605

However, since the magnetic sensor described in Patent Document 1 uses the magnetic material layer as a part of the signal wiring, when an electromagnetic wave coming from the outside enters the magnetic material layer, a signal is transmitted through the magnetic material layer. There was a problem that noise was superimposed on the wiring. In order to solve such a problem, the magnetoresistive effect element and the magnetic material layer may be isolated from each other by insulation, but even in this case, the magnetoresistive effect element and the magnetic material layer need to be arranged close to each other. Because of this, both were capacitively coupled, and high-frequency noise was sometimes superimposed on the signal wiring.

Therefore, an object of the present invention is to prevent noise due to electromagnetic waves coming from the outside from being superimposed on signal wiring in a magnetic sensor including a magnetoresistive effect element and a magnetic material layer formed on a substrate.

The magnetic sensor according to the present invention is provided on the substrate, the magnetoresistive element provided on the substrate and connected between the power supply wiring and the signal wiring, and the magnetic resistance effect element adjacent to the magnetic resistance effect element. It is characterized by including a magnetic material layer connected to the power supply wiring.

According to the present invention, since the magnetic material layer adjacent to the magnetoresistive effect element is connected to the power supply wiring, noise due to electromagnetic waves coming from the outside is not directly superimposed on the signal wiring. Moreover, since the magnetic layer is connected to the power supply wiring, noise due to electromagnetic waves can be released to the power supply wiring. Further, since the magnetic material layer and the magnetoresistive sensor are connected to the same power supply wiring, the increase in the number of wirings can be minimized.

The magnetic sensor according to the present invention may further include a resistance element that is connected between the magnetic material layer and the power supply wiring and has a lower resistance value than the magnetoresistive effect element. As described above, the magnetic material layer does not need to be directly connected to the power supply wiring, and may be connected via a resistance element having a resistance value lower than that of the magnetoresistive effect element.

In the present invention, the magnetic material layer includes the first and second magnetic material layers, and the magnetoresistive effect element is formed by a gap between the first magnetic material layer and the second magnetic material layer. It is preferable that the magnetic path is arranged on the magnetic path. According to this, it is possible to perform effective magnetic collection by the two magnetic material layers and to have high directivity.

In this case, the first magnetic material layer is connected to the power supply wiring, the second magnetic material layer is insulated from both the power supply wiring and the signal wiring, and the area of the first magnetic material layer is May have a configuration larger than the area of the second magnetic material layer. As described above, since the magnetic material layer having a small area is not easily affected by external electromagnetic waves, such a magnetic material layer may be separated from the power supply wiring. According to this, it is possible to suppress an increase in the number of wirings.

It is preferable that the magnetic sensor according to the present invention further includes a resistance element connected between the signal wiring and another power supply wiring. According to this, it is possible to take out the change in the resistance value of the magnetoresistive effect element as the change in voltage.

In this case, the resistance element may be another magnetoresistive effect element. This makes it possible to increase the amplitude of the output signal. Further, in this case, the magnetic material layer further includes a third magnetic material layer, and the magnetic resistance effect element is formed by a gap between the first magnetic material layer and the second magnetic material layer. It is preferably composed of a plurality of magnetic resistance effect elements arranged on the magnetic path and on the magnetic path formed by the gap between the second magnetic material layer and the third magnetic material layer and connected by a bridge. .. This makes it possible to further increase the amplitude of the output signal.

In this case, it is preferable to further include an external magnetic material arranged on the second magnetic material layer. According to this, the magnetic flux in the direction perpendicular to the substrate can be efficiently collected, and the magnetic flux can be distributed to the plurality of magnetoresistive elements connected by the bridge.

In the present invention, the power supply wiring is preferably ground wiring. According to this, it is possible to surely stabilize the potential of the magnetic material layer and prevent the occurrence of unexpected short-circuit defects.

As described above, according to the present invention, in the magnetic sensor including the magnetoresistive effect element and the magnetic material layer formed on the substrate, noise due to electromagnetic waves coming from the outside is effectively prevented from being superimposed on the signal wiring. It becomes possible.

FIG. 1 is a schematic plan view for explaining the configuration of the magnetic sensor 10A according to the first embodiment of the present invention. FIG. 2 is a schematic cross-sectional view taken along the line AA shown in FIG. FIG. 3 is a schematic plan view for explaining the configuration of the magnetic sensor 10B according to the second embodiment of the present invention. FIG. 4 is a schematic plan view for explaining the configuration of the magnetic sensor 10C according to the third embodiment of the present invention. FIG. 5 is a schematic plan view for explaining the configuration of the magnetic sensor 10D according to the fourth embodiment of the present invention. FIG. 6 is a schematic plan view for explaining the configuration of the magnetic sensor 10E according to the fifth embodiment of the present invention. FIG. 7 is a schematic plan view for explaining the configuration of the magnetic sensor 10F according to the sixth embodiment of the present invention. FIG. 8 is a schematic plan view for explaining the configuration of the magnetic sensor 10G according to the seventh embodiment of the present invention. FIG. 9 is a schematic plan view for explaining the configuration of the magnetic sensor 10H according to the eighth embodiment of the present invention. FIG. 10 is a schematic cross-sectional view taken along the line DD shown in FIG. FIG. 11 is a cross-sectional view showing a first modification of the magnetic sensor 10H. FIG. 12 is a cross-sectional view showing a second modification of the magnetic sensor 10H. FIG. 13 is a cross-sectional view showing a third modification of the magnetic sensor 10H. FIG. 14 is a schematic plan view for explaining the configuration of the magnetic sensor 10I according to the ninth embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

<First Embodiment>
FIG. 1 is a schematic plan view for explaining the configuration of the magnetic sensor 10A according to the first embodiment of the present invention. FIG. 2 is a schematic cross-sectional view taken along the line AA shown in FIG.

As shown in FIGS. 1 and 2, the magnetic sensor 10A according to the present embodiment has the first and second magnetic material layers 21 and 22 arranged in the x direction and the second magnetic sensor 10A in a plan view (when viewed from the z direction). It is provided with a magnetoresistive effect element 11 arranged at a position overlapping the gap provided between the first and the second magnetic material layers 21 and 22. The magnetoresistive effect element 11 is an element whose electrical resistance changes according to the direction and strength of the magnetic field. In the present embodiment, the longitudinal direction of the magnetoresistive effect element 11 is the y direction, and the sensitivity direction (fixed magnetization direction) is the direction indicated by the arrow B in FIGS. 1 and 2 (plus side in the x direction).

The first and second magnetic material layers 21 and 22 play a role of collecting magnetic fluxes to be detected, aligning the directions of the magnetic fluxes, and applying the magnetic fluxes to the magnetoresistive effect element 11. The first and second magnetic material layers 21 and 22 may be a film made of a composite magnetic material in which a magnetic filler is dispersed in a resin material, or a thin film or a foil made of a soft magnetic material such as nickel or permalloy. It may be a thin film or a bulk sheet made of ferrite or the like.

The magnetoresistive effect element 11 and the first and second magnetic material layers 21 and 22 are both provided on the substrate 30. In the example shown in FIG. 2, a thin insulating layer 31 is formed on the surface of the substrate 30, and the magnetoresistive effect element 11 is formed on the surface of the insulating layer 31. The magnetoresistive effect element 11 is covered with another insulating layer 32, and the first and second magnetic material layers 21 and 22 are formed on the surface of the insulating layer 32. However, the insulating layer 32 may be omitted, and the magnetoresistive effect element 11 and the first and second magnetic material layers 21 and 22 may be formed on the surface of the insulating layer 31.

The magnetoresistive effect element 11 and the first and second magnetic material layers 21 and 22 are arranged so as to be adjacent to each other in the x direction. Therefore, when a magnetic field in the x direction is received, a magnetic flux is generated from the first magnetic material layer 21 to the second magnetic material layer 22 (or from the second magnetic material layer 22 to the first magnetic material layer 21). At that time, the magnetic flux crosses the magnetoresistive effect element 11 in the x direction. As a result, the resistance value of the magnetoresistive element 11 changes depending on the direction and strength of the magnetic flux.

As shown in FIG. 1, in the present embodiment, one end of the magnetoresistive element 11 in the y direction is connected to the ground wiring G, and the other end is connected to the signal wiring S. The ground wiring G is a power supply wiring to which the ground potential GND is supplied. Further, a resistance element R is connected between the power supply wiring P to which the power supply potential Vcc is supplied and the signal wiring S. As a result, the output signal OUT appearing in the signal wiring S changes depending on the resistance value of the magnetoresistive effect element 11, and it becomes possible to detect the direction and strength of the magnetic field. The resistance element R may be a metal film resistance having a substantially constant resistance value, or may have a resistance value that changes like a magnetoresistive effect element. As a matter of course, the first and second magnetic material layers 21 and 22 and the signal wiring S need to be separated so as not to be directly connected.

Further, in the present embodiment, the first and second magnetic material layers 21 and 22 are connected to the ground wiring G, whereby the first and second magnetic material layers 21 and 22 are fixed to the ground potential GND. Has been done. Therefore, since the potentials of the first and second magnetic material layers 21 and 22 hardly change even when the electromagnetic waves coming from the outside are received, noise is not generated in the output signal OUT due to the external electromagnetic waves.

As described above, in the magnetic sensor 10A according to the present embodiment, since the first and second magnetic material layers 21 and 22 provided adjacent to the magnetoresistive effect element 11 are fixed to the ground potential GND, they are foreign. It is possible to suppress noise caused by electromagnetic waves. In the present embodiment, the ground potential GND is given to the first and second magnetic material layers 21 and 22, but the present invention is not limited to this, and if it is a fixed potential, the ground potential GND is used. Not limited. Therefore, instead of giving the ground potential GND, the power potential Vcc may be given via the power supply wiring P. However, in order to enhance the effect of the present invention, it is effective to connect to a power supply wiring having a lower impedance, so it is most preferable to give a ground potential GND.

Further, in the present embodiment, the magnetoresistive effect element 11 and the first and second magnetic material layers 21 and 22 are connected to the same power supply wiring (ground wiring G), but this point is not essential in the present invention. .. Therefore, for example, the magnetoresistive effect element 11 may be connected to the ground wiring G, and the first and second magnetic material layers 21 and 22 may be connected to the power supply wiring P. However, if the magnetoresistive sensor 11 and the first and second magnetic material layers 21 and 22 are connected to the same power supply wiring as in the present embodiment, it is possible to prevent unexpected short circuit defects and the like, and it is necessary. It is possible to reduce the number of wirings.

<Second embodiment>
FIG. 3 is a schematic plan view for explaining the configuration of the magnetic sensor 10B according to the second embodiment of the present invention.

The magnetic sensor 10B according to the first embodiment is magnetic according to the first embodiment in that resistance elements R1 and R2 are connected between the first and second magnetic material layers 21 and 22 and the ground wiring G, respectively. It is different from the sensor 10A. Since the other configurations are the same as those of the magnetic sensor 10A according to the first embodiment, the same elements are designated by the same reference numerals, and duplicate description will be omitted.

As illustrated by the present embodiment, in the present invention, it is not essential to directly connect the first and second magnetic material layers 21 and 22 to the ground wiring G, and the resistance elements R1 and R2 are interposed between the first and second magnetic material layers 21 and 22. It doesn't matter. If such resistance elements R1 and R2 are interposed, there is an advantage that noise caused by external electromagnetic waves is less likely to sneak into the magnetoresistive effect element 11 via the ground wiring G. In order to sufficiently reduce the influence of external electromagnetic waves, it is preferable that the resistance values of the resistance elements R1 and R2 are lower than the resistance values of the magnetoresistive effect element 11.

<Third embodiment>
FIG. 4 is a schematic plan view for explaining the configuration of the magnetic sensor 10C according to the third embodiment of the present invention.

In the magnetic sensor 10C according to the present embodiment, the magnetoresistive effect element 11 is divided into two magnetoresistive effect elements 11a and 11b, and another magnetic material is provided between the magnetoresistive effect element 11a and the magnetoresistive element 11b. It differs from the magnetic sensor 10A according to the first embodiment in that the layer 20 is arranged. Since the other configurations are the same as those of the magnetic sensor 10A according to the first embodiment, the same elements are designated by the same reference numerals, and duplicate description will be omitted.

As shown in FIG. 4, the magnetoresistive effect elements 11a and 11b both extend in the y direction, and their ends are connected to each other via the wiring L. As a result, the change in the resistance value due to the magnetic field can be made larger than in the case of using one magnetoresistive element 11. Further, the magnetic material layer 20 is also an elongated magnetic material extending in the y direction, and is made of the same material as the first and second magnetic material layers 21 and 22. By adding such a magnetic material layer 20, it is possible to reduce the magnetic resistance between the first magnetic material layer 21 and the second magnetic material layer 22.

In the present embodiment, the magnetic material layer 20 is not connected to any of the wirings and is electrically in a floating state, but the ground potential GND may be applied via the ground wiring G. Further, instead of dividing the magnetoresistive effect element 11 into two magnetic resistance effect elements 11a and 11b, the magnetoresistive effect element 11 itself may be folded back into a U shape.

<Fourth Embodiment>
FIG. 5 is a schematic plan view for explaining the configuration of the magnetic sensor 10D according to the fourth embodiment of the present invention.

In the magnetic sensor 10D according to the present embodiment, the area of the second magnetic material layer 22 is smaller than the area of the first magnetic material layer 21, and the second magnetic material layer 22 is electrically in a floating state. Is different from the magnetic sensor 10A according to the first embodiment. Since the other configurations are the same as those of the magnetic sensor 10A according to the first embodiment, the same elements are designated by the same reference numerals, and duplicate description will be omitted.

As described above, when the area of the second magnetic material layer 22 is small, the influence of external electromagnetic waves is also small, so that the second magnetic material layer 22 may be in a floating state without being connected to any wiring. .. According to this, it is possible to reduce the number of wirings on the substrate 30.

<Fifth Embodiment>
FIG. 6 is a schematic plan view for explaining the configuration of the magnetic sensor 10E according to the fifth embodiment of the present invention.

The magnetic sensor 10E according to the present embodiment is different from the magnetic sensor 10A according to the first embodiment in that the second magnetic material layer 22 is deleted. Since the other configurations are the same as those of the magnetic sensor 10A according to the first embodiment, the same elements are designated by the same reference numerals, and duplicate description will be omitted.

As illustrated by the present embodiment, it is not essential to sandwich the magnetoresistive element 11 between the two magnetic body layers 21 and 22 in the present invention, and at least one magnetic body layer 21 is adjacent to the magnetic resistance effect element 11. It is enough if it is arranged like this.

<Sixth Embodiment>
FIG. 7 is a schematic plan view for explaining the configuration of the magnetic sensor 10F according to the sixth embodiment of the present invention.

The magnetic sensor 10F according to the present embodiment is different from the magnetic sensor 10A according to the first embodiment in that a magnetoresistive effect element 12 is provided instead of the resistance element R. Since the other configurations are the same as those of the magnetic sensor 10A according to the first embodiment, the same elements are designated by the same reference numerals, and duplicate description will be omitted.

Similar to the magnetoresistive element 11, the magnetoresistive effect element 12 is arranged at a position overlapping the gap between the first magnetic material layer 21 and the second magnetic material layer 22. The sensitivity direction (fixed magnetization direction) of the magnetoresistive element 11 is the direction indicated by the arrow C in FIG. 7 (minus side in the x direction). That is, the fixed magnetization directions of the magnetoresistive element 11 and the magnetoresistive element 12 differ from each other by 180 °.

According to such a configuration, the change in the resistance value of the magnetoresistive effect element 11 and the change in the resistance value of the magnetoresistive effect element 12 are complementary to each other. Both can be detected and higher detection sensitivity can be obtained.

<7th Embodiment>
FIG. 8 is a schematic plan view for explaining the configuration of the magnetic sensor 10G according to the seventh embodiment of the present invention.

In the magnetic sensor 10G according to the present embodiment, the first magnetic material layer 21 is divided into two magnetic material layers 21a and 21b, and the second magnetic material layer 22 is divided into two magnetic material layers 22a and 22b. In that respect, it is different from the magnetic sensor 10F according to the sixth embodiment. Since the other configurations are the same as those of the magnetic sensor 10F according to the sixth embodiment, the same elements are designated by the same reference numerals, and duplicate description will be omitted.

Also in this embodiment, the magnetic layer 21a, 21b, 22a, 22b are all connected to the ground wiring G. Therefore, it is possible to obtain the same effect as that of the magnetic sensor 10F according to the sixth embodiment. Moreover, since the first and second magnetic material layers 21 and 22 are both divided in the y direction, the magnetic resistance in the y direction becomes high. As a result, it is less likely to be affected by the magnetic field in the y direction, which is not the detection target, and the directivity is enhanced.

<Eighth Embodiment>
FIG. 9 is a schematic plan view for explaining the configuration of the magnetic sensor 10H according to the eighth embodiment of the present invention. FIG. 10 is a schematic cross-sectional view taken along the line DD shown in FIG.

The magnetic sensor 10H according to the present embodiment is different from the magnetic sensor 10F according to the sixth embodiment in that the magnetoresistive effect elements 13 and 14 and the third magnetic material layer 23 are added. The third magnetic material layer 23 is connected to the ground wiring G like the first and second magnetic material layers 21 and 22. The magnetoresistive effect elements 13 and 14 are arranged at positions overlapping with the gap between the second magnetic material layer 22 and the third magnetic material layer 23. The sensitivity directions (fixed magnetization directions) of these four magnetoresistive elements 11 to 14 are all the directions indicated by the arrow B in FIG. 9 (plus side in the x direction), and are bridge-connected as shown in FIG. There is. That is, the magnetoresistive effect elements 14 and 11 are connected in series, the output signal OUT1 is output from the signal wiring S1 which is the contact thereof, and the magnetoresistive effect elements 12 and 13 are connected in series, and the signal which is the contact thereof. The output signal OUT2 is output from the wiring S2.

Further, the external magnetic material 40 is arranged on the second magnetic material layer 22, and the external magnetic materials 41 and 42 are arranged at both ends of the substrate 30 in the x direction. The external magnetic materials 40 to 42 are blocks made of a soft magnetic material having a high magnetic permeability such as ferrite. Since the other configurations are the same as those of the magnetic sensor 10F according to the sixth embodiment, the same elements are designated by the same reference numerals, and duplicate description will be omitted.

As shown in FIG. 10, the external magnetic material 40 collects the magnetic flux φ in the z direction (perpendicular to the main surface of the substrate 30) and distributes the magnetic flux φ to the left and right via the second magnetic material layer 22. Fulfill. That is, half of the magnetic flux φ in the z direction collected by the external magnetic material 40 is bent toward the first magnetic material layer 21 via the magnetoresistive effect elements 11 and 12, and the other half is the magnetic resistance effect element. It is bent toward the third magnetic material layer 23 via 13 and 14. The force for bending the magnetic flux is strengthened by using the external magnetic bodies 41 and 42. Since the magnetoresistive elements 11 to 14 are bridge-connected, a potential difference is generated between the output signal OUT1 and the output signal OUT2 according to the density of the magnetic flux φ.

As described above, since the magnetic sensor 10H according to the present embodiment includes the external magnetic body 40 and the four magnetoresistive effect elements 11 to 14 are bridge-connected, the magnetic flux φ in the z direction can be detected with high sensitivity. Is possible.

As shown in FIG. 10, the magnetoresistive effect elements 11 to 14 are formed on the insulating layer 31 of the lower layer, and the magnetic material layers 21 to 23 are formed on the insulating layer 32 of the upper layer, so that the magnetoresistive effect is obtained. The positions of the elements 11 to 14 and the magnetic material layers 21 to 23 in the z direction are slightly different. Therefore, the magnetoresistive effect elements 11 to 14 are arranged at positions slightly offset in the z direction with respect to the gap formed by the magnetic material layers 21 to 23, but are formed by the presence of the gap. Since it is located on the magnetic path, it can receive the magnetic flux flowing from one magnetic material layer to the other magnetic material layer. As described above, the position where the magnetoresistive effect element is provided may be slightly deviated from the gap formed by the two magnetic material layers. In this way, when the magnetoresistive effect elements 11 to 14 and the magnetic material layers 21 to 23 are formed in different layers, as shown in FIG. 11, the widths of the magnetic resistance effect elements 11 to 14 in the x direction are set to two magnetic materials. It may be larger than the width of the gap formed by the layers in the x direction.

Further, as shown in FIG. 12, the gap formed by the two magnetic material layers may be formed in the z direction by using the three insulating layers 31 to 33. That is, the gap does not have to be flat. In the example shown in FIG. 12, the magnetoresistive effect element 11 is arranged in the gap formed by the overlap of the magnetic material layer 21 and the magnetic material layer 22, and the gap formed by the overlap of the magnetic material layer 22 and the magnetic material layer 23 is formed. The magnetoresistive effect element 13 is arranged.

Further, as shown in FIG. 13, the magnetic material layers 21 and 23 and the magnetic material layers 22 may be formed on different planes and may not overlap each other. In this case, the gap formed by the two magnetic layer is diagonal. In the example shown in FIG. 13, the magnetoresistive effect element 11 is arranged in the diagonal gap formed between the edge of the magnetic material layer 21 and the edge of the magnetic material layer 22, and the edge of the magnetic material layer 22 and the magnetic material are arranged. The magnetoresistive effect element 13 is arranged in a diagonal gap formed between the layer 23 and the edge of the layer 23.

As illustrated in FIGS. 10 to 13, the gap formed by the two magnetic material layers may be two-dimensional or three-dimensional. Further, the magnetoresistive effect element does not have to be strictly located in the gap, but may be located on the magnetic path formed by the existence of the gap.

<9th embodiment>
FIG. 14 is a schematic plan view for explaining the configuration of the magnetic sensor 10I according to the ninth embodiment of the present invention.

In the magnetic sensor 10I according to the present embodiment, the second and third magnetic material layers 22 and 23 are not directly connected to the ground wiring G, but are connected to the ground wiring G via the first magnetic material layer 21. In that respect, it differs from the magnetic sensor 10H according to the eighth embodiment. Since the other configurations are the same as those of the magnetic sensor 10H according to the eighth embodiment, the same elements are designated by the same reference numerals, and duplicate description will be omitted.

As illustrated by the present embodiment, in the present invention, it is not essential that all the magnetic material layers are directly connected to the power supply wiring such as the ground wiring G, and some magnetic material layers connect to other magnetic material layers. It may be connected to the power supply wiring via. According to this, the power supply wiring such as the ground wiring G can be easily routed, so that the degree of freedom in design is increased.

Although the preferred embodiment of the present invention has been described above, the present invention is not limited to the above embodiment, and various modifications can be made without departing from the gist of the present invention, and these are also the present invention. Needless to say, it is included in the range.

10A to 10I Magnetic sensors 11 to 14, 11a, 11b Magnetoresistive sensor 20 to 23, 21a, 21b, 22a, 22b Magnetic material layer 30 Substrate 31 to 33 Insulation layer 40 to 42 External magnetic material G Ground wiring L Wiring P Power supply Wiring R, R1, R2 Resistive element S, S1, S2 Signal wiring φ Magnetic flux

Claims (9)

With the board
A first magnetoresistive element provided on the substrate and connected between the first power supply wiring and the signal wiring to which a fixed potential is applied , and
A magnetic sensor including a magnetic material layer provided on the substrate so as to be adjacent to the first magnetoresistive element and connected to the first power supply wiring. The magnetic sensor according to claim 1, further comprising a resistance element connected between the magnetic material layer and the first power supply wiring and having a resistance value lower than that of the first magnetoresistive effect element. .. The magnetic material layer includes the first and second magnetic material layers, and includes the first and second magnetic material layers.
Claim 1 or claim 1, wherein the first magnetoresistive sensor is arranged on a magnetic path formed by a gap between the first magnetic material layer and the second magnetic material layer. 2. The magnetic sensor according to 2. The first magnetic material layer is connected to the first power supply wiring and is connected to the first power supply wiring.
The second magnetic material layer is insulated from both the first power supply wiring and the signal wiring.
The magnetic sensor according to claim 3, wherein the area of the first magnetic material layer is larger than the area of the second magnetic material layer. Further, a resistance element connected between the signal wiring and the second power supply wiring to which a fixed potential different from the fixed potential is given is further provided , thereby between the first power supply wiring and the second power supply wiring. The magnetic sensor according to claim 3 , wherein the first magnetoresistive effect element and the resistance element are connected in series . The magnetic sensor according to claim 5, wherein the resistance element is a second magnetoresistive element different from the first magnetoresistive element. The magnetic material layer further includes a third magnetic material layer, and the magnetic material layer further includes a third magnetic material layer.
The first magnetoresistive sensor is on a magnetic path formed by a gap between the first magnetic material layer and the second magnetic material layer, and the second magnetic material layer and the third magnetic material layer. The magnetic sensor according to claim 6, wherein the magnetic sensor is arranged on a magnetic path formed by a gap between the magnetic material layers of the material and comprises a plurality of bridge-connected magnetoresistive effect elements. The magnetic sensor according to claim 7, further comprising an external magnetic material arranged on the second magnetic material layer. The magnetic sensor according to any one of claims 1 to 8, wherein the first power supply wiring is a ground wiring.

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