WO2018152882A1 - 栅极驱动电路的检测装置及检测方法 - Google Patents

栅极驱动电路的检测装置及检测方法 Download PDF

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Publication number
WO2018152882A1
WO2018152882A1 PCT/CN2017/076553 CN2017076553W WO2018152882A1 WO 2018152882 A1 WO2018152882 A1 WO 2018152882A1 CN 2017076553 W CN2017076553 W CN 2017076553W WO 2018152882 A1 WO2018152882 A1 WO 2018152882A1
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WIPO (PCT)
Prior art keywords
connecting portion
electrically connected
driving circuit
gate driving
metal layer
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PCT/CN2017/076553
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English (en)
French (fr)
Inventor
王景龙
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to US15/523,047 priority Critical patent/US20180331091A1/en
Publication of WO2018152882A1 publication Critical patent/WO2018152882A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/911—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using passive elements as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H10P74/273—Interconnections for measuring or testing, e.g. probe pads
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264—Details of driving circuits
    • G09G2310/0267—Details of drivers for scan electrodes, other than drivers for liquid crystal, plasma or OLED displays
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/12—Test circuits or failure detection circuits included in a display system, as permanent part thereof

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a detection device for a gate driving circuit, and to a method for detecting a gate driving circuit.
  • a metal pad is usually used to connect the output end of the gate driving circuit with a test pad (also referred to as a test point). Bits) are directly connected together.
  • the probe component of the thin film transistor display detects the signal output from the test pad, and determines whether the gate drive circuit of the thin film transistor display is abnormal.
  • test pads typically use bulk metal, which is often susceptible to electrostatic hazards.
  • ESD electrostatic discharge
  • the technical problem to be solved by the present invention is that since the output end of the gate driving circuit is always connected with the test pad composed of a large piece of metal, the gate driving circuit is used in the production and transportation of the product.
  • the electrostatic discharge (ESD) caused by the connection of the output terminal to the test pad is easily introduced into the gate drive circuit, resulting in breakdown and damage of the thin film transistor constituting the gate drive circuit.
  • the present invention provides a detecting device and a detecting method for a gate driving circuit.
  • a detecting device for a gate driving circuit comprising a test pad and electricity Connecting the gate drive circuit and the connector of the test pad, the connector comprising a first connection portion, a second connection portion and a third connection portion;
  • the first end of the first connecting portion is electrically connected to the output end of the gate driving circuit, and the first end of the second connecting portion is electrically connected to the test pad;
  • the second end of the first connecting portion is electrically connected to the third connecting portion, and the second end of the second connecting portion is electrically insulated from the third connecting portion.
  • the first connecting portion and the second connecting portion are disposed on the first metal layer
  • the third connecting portion is disposed on the second metal layer
  • the first metal layer and the second metal layer are insulated Settings.
  • an insulating layer is disposed between the first metal layer and the second metal layer to insulate the first metal layer and the second metal layer.
  • the insulating layer is provided with at least one via hole, and the second end of the first connecting portion is electrically connected to the third connecting portion through the via hole.
  • the first metal layer further includes a pattern of scan lines of the display panel and a pattern of gates of the switching elements of the display panel.
  • the second metal layer further includes a pattern of data lines of the display panel and a pattern of source and drain of the switching elements of the display panel.
  • the insulating layer is made of silicon nitride; and/or
  • the first metal layer is made of molybdenum/aluminum and the second metal layer is made of molybdenum/aluminum/iridium.
  • the insulating material between the second end of the second connecting portion and the third connecting portion is melted by laser, so that the second end of the second connecting portion is The third connecting portion is electrically connected.
  • a method of detecting a gate driving circuit comprising:
  • a detecting device comprising a test pad and a connector electrically connecting the gate driving circuit and the test pad, the connector comprising a first connecting portion, a second connecting portion and a third connection
  • the first end of the first connecting portion is electrically connected to the output end of the gate driving circuit, and the first end of the second connecting portion is electrically connected to the test pad;
  • a second end of the connecting portion is electrically connected to the third connecting portion, and a second end of the second connecting portion is electrically insulated from the third connecting portion;
  • the insulating material between the second end of the second connecting portion and the third connecting portion is melted by laser to make the second connecting portion The end is electrically connected to the third connecting portion Then, the output signal of the gate driving circuit is sequentially outputted through the connecting member and the test pad.
  • the method further comprises:
  • the third connecting portion corresponds to a one-time switch for electrically connecting the first connecting portion and the second connecting portion when the panel abnormality needs to be detected. It can be seen that the first connection portion and the second connection portion are disconnected from each other when the detection panel is not required. The first connecting portion and the second connecting portion are electrically connected through the third connecting portion only when the detecting panel is abnormal, so that the output signal of the gate driving circuit sequentially passes through the first connecting portion, the third connecting portion and the second The connection is conducted to the test pad. Therefore, the electrostatic discharge caused by the output terminal of the gate driving circuit always being connected to the test pad does not cause damage to the gate driving circuit, thereby avoiding breakdown and damage of the thin film transistor constituting the gate driving circuit. In other words, the present invention is advantageous for improving the product yield of the liquid crystal display panel.
  • FIG. 1 is a schematic structural view of a detecting device of a gate driving circuit according to an embodiment of the present invention
  • FIG. 2 is a schematic cross-sectional view showing a region where the second connecting portion overlaps with the third connecting portion when the detecting panel is not required;
  • FIG. 3 is a schematic cross-sectional view showing an overlapping region of the second connecting portion and the third connecting portion when the detecting panel is abnormal;
  • FIG. 4 is a flow chart showing a method of detecting a gate driving circuit according to an embodiment of the present invention.
  • the technical problem to be solved by the present invention is that the output end of the gate driving circuit is always made up of large blocks due to the prior art.
  • the test pads made of metal are connected together, so in the process of production, transportation, etc., the electrostatic discharge (ESD) caused by the connection of the output terminal 4 of the gate drive circuit to the test pad 5 is always easily introduced into the gate drive circuit, resulting in the formation of the gate. Breakdown and damage of the thin film transistor of the pole drive circuit.
  • an embodiment of the present invention provides a detecting device for a gate driving circuit.
  • Fig. 1 is a view showing the structure of a gate driving circuit detecting device of this embodiment.
  • the detecting device of the gate driving circuit of the embodiment of the present invention mainly includes a first connecting portion 11, a second connecting portion 12, and a third connecting portion 21.
  • the first connecting portion 11, the second connecting portion 12, and the third connecting portion 21 are all metal connecting portions.
  • the first connection portion 11 and the second connection portion 12 are disposed on the first metal layer. That is, the first metal layer includes the pattern of the first connection portion 11 and the pattern of the second connection portion 12. Further, the first connecting portion 11 and the second connecting portion 12 are spaced apart from each other.
  • the third connection portion 21 is disposed on the second metal layer.
  • the second metal layer and the first metal layer are different metal layers. That is, the second metal layer includes a pattern of the third connection portion 21.
  • an insulating layer 30 is disposed between the first metal layer and the second metal layer.
  • the first end of the first connecting portion 11 is electrically connected to the output end 4 of the gate driving circuit. That is, the first end of the first connecting portion 11 is electrically connected to the object to be measured (ie, the gate driving circuit).
  • the first end of the second connecting portion 12 is electrically connected to the test pad 5 .
  • the second end of the first connecting portion 11 is electrically connected to the third connecting portion 21 through a via 31 provided on the insulating layer 30.
  • the second end of the first connecting portion 11 is always electrically connected to the third connecting portion 21.
  • the second end of the first connecting portion 11 is electrically connected to the third connecting portion 21 through at least two via holes 31 provided on the insulating layer 30.
  • the number of via holes 31 is an integer greater than or equal to 2. It can be seen that the embodiment advantageously ensures the reliable connection of the first connecting portion 11 and the third connecting portion 21, so that the signal transmission is more stable and reliable.
  • the second end of the second connecting portion 12 is electrically insulated from the third connecting portion 21.
  • the third connecting portion 21 and the second connecting portion 12 are separated by an insulating layer 30.
  • the second end of the second connecting portion 12 is electrically insulated from the third connecting portion 21 when the liquid crystal display panel is in a normal state (that is, when the detecting panel is not required to be abnormal).
  • the output 4 of the gate drive circuit is thus electrically isolated from the test pad 5.
  • the electrostatic discharge caused by the connection of the output terminal 4 of the gate driving circuit to the test pad 5 is not conducted to the gate driving circuit, and the gate driving circuit is not damaged, thereby avoiding the formation of the gate driving. Breakdown and damage of the thin film transistor of the circuit.
  • the embodiments of the present invention are advantageous for improving the product yield of the liquid crystal display panel.
  • This embodiment further optimizes the structure of the detecting device in the first embodiment.
  • the insulating material between the second end of the second connecting portion 12 and the third connecting portion 21 ie, in the insulating layer 30
  • the insulating material is melted by laser so that the second end of the second connecting portion 12 is electrically connected to the third connecting portion 21.
  • FIG. 2 is a schematic cross-sectional view showing an area where the second connecting portion 12 overlaps with the third connecting portion 21 when the detecting panel is not required.
  • FIG. 3 is a schematic cross-sectional view showing an area where the second connecting portion 12 overlaps with the third connecting portion 21 when the detecting panel is abnormal. Referring to FIG. 3, when the panel is abnormal, the insulating material between the third connecting portion 21 and the second end of the second connecting portion 12 is melted by laser.
  • laser has characteristics of high luminance, high directivity, high monochromaticity, and high coherence.
  • the laser beam can generate a high temperature of several thousand degrees or even tens of thousands of degrees directly above the third connecting portion 21.
  • the region where the surface of the third connecting portion 21 is irradiated with the laser beam starts to dissolve, thereby forming a flowing liquid metal.
  • the liquid metal passes through (corresponding to melting) the insulating layer 30 and is welded to the second connecting portion 12.
  • the second end of the second connecting portion 12 and the third connecting portion 21 can be electrically connected. It can be seen that the second end of the second connecting portion 12 is electrically connected to the third connecting portion 21 by the action of the laser welding, so that the second end of the second connecting portion 12 and the third connecting portion 21 are electrically connected.
  • the third connection portion 21 is electrically insulated from the second end of the second connection portion 12 when the detection panel is not required. Only when the detection panel is abnormal, the third connection portion 21 and the second end of the second connection portion 12 are electrically connected.
  • the output end 4 of the gate drive circuit - the first connection portion 11 - the third connection
  • the above signal transmission channel is formed only when the detection panel is abnormal. In this way, it is possible to avoid damage to the gate driving circuit caused by the electrostatic discharge caused by the output terminal 4 of the gate driving circuit always being connected to the test pad 5 in the prior art, thereby avoiding the breakdown of the thin film transistor constituting the gate driving circuit. damage.
  • the second end of the second connecting portion 12 and the third connecting portion 21 are electrically connected to each other when the panel is abnormally detected by means of laser welding.
  • the third connecting portion 21 corresponds to a disposable switch for electrically connecting the first connecting portion 11 and the second connecting portion 12 when the detecting panel is abnormal. It can be seen that the first connecting portion 11 and the second connecting portion 12 are disconnected from each other when the detecting panel is not required. The first connecting portion 11 and the second connecting portion 12 are electrically connected through the third connecting portion 21 only when the detecting panel is abnormal, so that the output signal of the output terminal 4 of the gate driving circuit sequentially passes through A connecting portion 11, a third connecting portion 21 and a second connecting portion 12 are conducted to the test pad 5.
  • the embodiments of the present invention are advantageous for improving the product yield of the liquid crystal display panel.
  • connection structure of each connection portion in this embodiment is simple and uncomplicated, and is advantageous for outputting an effective signal to the test pad 5 when the detection panel is abnormal.
  • This embodiment optimizes the patterns of the first metal layer and the second metal layer, and the materials of the respective metals and the insulating layer 30 on the basis of the first embodiment or the second embodiment.
  • the first metal layer includes, in addition to the pattern of the first connecting portion 11 and the pattern of the second connecting portion 12, a pattern of scanning lines of the display panel and a pattern of gates of switching elements of the display panel. That is, the first connection portion 11 and the second connection portion 12 are provided in the same layer as the scanning line of the display panel and the gate of the switching element. It can be seen that the embodiment is advantageous for reducing the manufacturing process of the display panel.
  • the first metal layer is preferably formed using a molybdenum/aluminum double layer metal structure, but the invention is not limited thereto.
  • the first metal layer may also be formed using a molybdenum/tungsten double layer metal structure or an aluminum single layer metal structure.
  • the second metal layer includes, in addition to the pattern of the third connection portion 21, a pattern of data lines of the display panel and a pattern of source and drain electrodes of the switching elements of the display panel. That is, the third connection portion 21 is provided in the same layer as the data line of the display panel and the drain and source of the switching element. It can be seen that the embodiment is advantageous for reducing the manufacturing process of the display panel.
  • the second metal layer is preferably formed of a three-layer metal structure of molybdenum/aluminum/iridium, but the invention is not limited thereto.
  • the second metal layer may also adopt a titanium/aluminum/titanium three-layer metal structure.
  • the insulating layer 30 may be made of silicon nitride.
  • the material of the insulating layer 30 may also be one or both of silicon nitride (SiNx) and silicon oxide (SiOx). It should be noted that the embodiment of the present invention does not limit the material of the insulating layer 30, as long as the material properties of the insulating layer 30 used can meet the performance requirements of the detecting device of the gate driving circuit.
  • This embodiment provides a detection method of the detecting device based on the gate driving circuit in the first embodiment, the second embodiment or the third embodiment.
  • FIG. 4 is a flow chart showing a method of detecting a gate driving circuit according to an embodiment of the present invention.
  • the detection method of the gate driving circuit of this embodiment mainly includes steps S101 to S103.
  • a detecting device in step 101, includes a test pad 5 and a connector electrically connecting the gate driving circuit and the test pad 5.
  • the connector includes a first connecting portion 11, a second connecting portion 12, and a third connecting portion 21.
  • the first metal layer includes a pattern of the first connection portion 11 and a pattern of the second connection portion 12
  • the second metal layer includes a pattern of the third connection portion 21, and is disposed between the first metal layer and the second metal layer
  • the first end of the first connecting portion 11 is electrically connected to the output end 4 of the gate driving circuit
  • the first end of the second connecting portion 12 is electrically connected to the test pad 5 .
  • the second end of the first connecting portion 11 is electrically connected to the third connecting portion 21
  • the second end of the second connecting portion 12 is electrically insulated from the third connecting portion 21 .
  • the detecting device provided in this step is the detecting device of any one of Embodiments 1 to 3 above.
  • step 102 it is determined whether it is necessary to detect the gate driving circuit.
  • step 103 when it is determined in step 102 that the gate driving circuit needs to be detected, the insulating material between the second end of the second connecting portion 12 and the third connecting portion 21 is melted by laser to make the second connecting portion 12 The second end is electrically connected to the third connecting portion 21, so that the output signal of the gate driving circuit is sequentially output through the connecting member and the test pad 5.
  • the flow returns to step 102 to continue the above determination.
  • the method further includes determining the state of the gate drive circuit based on the signal output by the test pad 5.
  • laser has characteristics of high luminance, high directivity, high monochromaticity, and high coherence.
  • the laser beam can generate a high temperature of several thousand degrees or even tens of thousands of degrees directly above the third connecting portion 21.
  • the region where the surface of the third connecting portion 21 is irradiated with the laser beam starts to dissolve, thereby forming a flowing liquid metal.
  • the liquid metal passes through the insulating layer 30 and is welded to the second connecting portion 12.
  • the second end of the second connecting portion 12 and the third connecting portion 21 can be electrically connected. It can be seen that the second end of the second connecting portion 12 is electrically connected to the third connecting portion 21 by the action of the laser welding, so that the second end of the second connecting portion 12 and the third connecting portion 21 are electrically connected.
  • the following signal transmission channels are formed: the output terminal 4 of the gate drive circuit - the first connection portion 11 - the third connection portion 21 - the second connection portion 12 - the test pad 5. That is, the output signal of the gate driving circuit is sequentially conducted to the test pad 5 through the first connection portion 11, the third connection portion 21, and the second connection portion 12.
  • the second connecting portion 12 and the third connecting portion 21 are electrically connected only when the detecting panel is abnormal. Therefore, it is possible to avoid the destruction of the gate driving circuit by the electrostatic discharge caused by the output terminal 4 of the gate driving circuit always being connected to the test pad 5 in the prior art, thereby avoiding the breakdown of the thin film transistor constituting the gate driving circuit. damage.
  • the method of laser welding is skillfully adopted, and the second connecting portion 12 is made to be abnormal when the detecting panel is abnormal.
  • the second end is electrically connected to the third connecting portion 21 .
  • the detecting device includes a third connecting portion 21 corresponding to the first connecting portion 11 and the second connecting portion 12 being abnormal in the detecting panel.
  • a disposable switch that is electrically connected at all times. It can be seen that the first connecting portion 11 and the second connecting portion 12 are disconnected from each other when the detecting panel is not required.
  • the first connecting portion 11 and the second connecting portion 12 are electrically connected through the third connecting portion 21 only when the detecting panel is abnormal, so that the output signal of the gate driving circuit output terminal 4 sequentially passes through the first connecting portion 11 ,
  • the third connection portion 21 and the second connection portion 12 are conducted to the test pad 5.
  • the embodiment is advantageous for improving the product yield of the liquid crystal display panel.

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  • Physics & Mathematics (AREA)
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Abstract

公开了一种栅极驱动电路的检测装置及检测方法。该检测装置包括测试垫（5）和连接栅极驱动电路和测试垫（5）的连接件。连接件包括第一连接部（11）、第二连接部（12）和第三连接部（21）。第一连接部（11）的第一端与栅极驱动电路的输出端（4）电性连接，第二连接部（12）的第一端与测试垫（5）电性连接。第一连接部（11）的第二端与第三连接部（21）连接。第二连接部（12）的第二端与第三连接部（21）电性绝缘。该技术方案能够避免由栅极驱动电路的输出端始终与测试垫连接导致的静电释放对栅极驱动电路的破坏，有利于提高液晶显示面板的产品良率。

Description

栅极驱动电路的检测装置及检测方法
本申请要求享有2017年2月23日提交的名称为“栅极驱动电路的检测装置及检测方法”的中国专利申请CN201710099275.9的优先权，其全部内容通过引用并入本文中。
技术领域
本发明涉及显示技术领域，尤其涉及一种栅极驱动电路的检测装置，还涉及一种栅极驱动电路的检测方法。
背景技术
目前，越来越多的液晶显示面板采用在阵列基板上制作栅极驱动电路(Gate Driver on Array,GOA)技术来减少阵列基板的边框宽度，从而迎合液晶显示面板的窄边框设计趋势。为了对异常液晶显示面板进行输出信号检测和分析，需要增加对应检测电路。
在现有的用于检测薄膜晶体管显示器(TFT-LCD)的栅极驱动电路的检测电路中，通常利用金属走线将栅极驱动电路的输出端与测试垫(Test Pad，也称为测试点位)直接连接在一起。在检测面板异常时，薄膜晶体管显示器的探针部件检测测试垫输出的信号，并据此判定该薄膜晶体管显示器的栅极驱动电路是否出现异常。然而，测试垫一般采用大块金属，而大块金属通常易引起静电风险。在产品生产运输等过程中，由于测试垫与栅极驱动电路的输出端始终连接，因此由栅极驱动电路的输出端始终与测试垫连接导致的静电释放(ESD)容易导入栅极驱动电路，导致构成栅极驱动电路的薄膜晶体管的击穿和损坏。
发明内容
本发明所要解决的技术问题是：由于现有技术将栅极驱动电路的输出端始终与由大块金属构成的测试垫连接在一起，因此在产品生产运输等过程中，由栅极驱动电路的输出端始终与测试垫连接导致的静电释放(ESD)容易导入栅极驱动电路，导致构成栅极驱动电路的薄膜晶体管的击穿和损坏。
为了解决上述技术问题，本发明提供了一种栅极驱动电路的检测装置及检测方法。
根据本发明的第一个方面，提供了一种栅极驱动电路的检测装置，其包括测试垫及电 连接所述栅极驱动电路和所述测试垫的连接件，所述连接件包括第一连接部、第二连接部和第三连接部；
其中，所述第一连接部的第一端与所述栅极驱动电路的输出端电性连接，所述第二连接部的第一端与所述测试垫电性连接；
所述第一连接部的第二端与所述第三连接部电性连接，所述第二连接部的第二端与所述第三连接部电性绝缘。
优选的是，所述第一连接部和所述第二连接部设置在第一金属层，所述第三连接部设置在第二金属层，且所述第一金属层和第二金属层绝缘设置。
优选的是，所述第一金属层和第二金属层之间设置有绝缘层，以使所述第一金属层和第二金属层绝缘设置。
优选的是，所述绝缘层上设置有至少一个过孔，所述第一连接部的第二端通过所述过孔与所述第三连接部电性连接。
优选的是，所述第一金属层还包括显示面板的扫描线的图案以及所述显示面板的开关元件的栅极的图案。
优选的是，所述第二金属层还包括显示面板的数据线的图案以及所述显示面板的开关元件的源极和漏极的图案。
优选的是，所述绝缘层由氮化硅制成；和/或
所述第一金属层由钼/铝制成，所述第二金属层由钼/铝/锗制成。
优选的是，在检测面板异常时，所述第二连接部的第二端与所述第三连接部之间的绝缘材料通过镭射被熔化，以使得所述第二连接部的第二端与所述第三连接部电性连接。
根据本发明的第二个方面，提供了一种栅极驱动电路的检测方法，其包括：
提供一检测装置，并使所述检测装置包括测试垫及电连接所述栅极驱动电路和所述测试垫的连接件，所述连接件包括第一连接部、第二连接部和第三连接部；其中，所述第一连接部的第一端与所述栅极驱动电路的输出端电性连接，所述第二连接部的第一端与所述测试垫电性连接；所述第一连接部的第二端与所述第三连接部电性连接，所述第二连接部的第二端与所述第三连接部电性绝缘；
判断是否需要检测所述栅极驱动电路；
在判断出需要检测所述栅极驱动电路时，通过镭射熔化所述第二连接部的第二端与所述第三连接部之间的绝缘材料，以使所述第二连接部的第二端与所述第三连接部电性连 接，从而使栅极驱动电路的输出信号依次经过所述连接件和所述测试垫输出。
优选的是，还包括：
根据所述测试垫输出的信号，确定所述栅极驱动电路的状态。
与现有技术相比，上述方案中的一个或多个实施例可以具有如下优点或有益效果：
应用本发明提供的栅极驱动电路检测装置，第三连接部相当于用于使第一连接部和第二连接部在需要检测面板异常时才电性连接的一次性开关。可见，在不需要检测面板时，第一连接部与第二连接部彼此断开。只有在检测面板异常时，才通过第三连接部使第一连接部和第二连接部电性连接，以使栅极驱动电路的输出信号依次通过第一连接部、第三连接部和第二连接部传导到测试垫上。因此，由栅极驱动电路的输出端始终与测试垫连接导致的静电释放不会对栅极驱动电路造成破坏，从而避免了构成栅极驱动电路的薄膜晶体管的击穿与损坏。换句话说，本发明有利于提高液晶显示面板的产品良率。
本发明的其它特征和优点将在随后的说明书中阐述，并且部分地从说明书中变得显而易见，或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
附图说明
附图用来提供对本发明的进一步理解，并且构成说明书的一部分，与本发明的实施例共同用于解释本发明，并不构成对本发明的限制。在附图中：
图1示出了本发明实施例栅极驱动电路的检测装置的结构示意图；
图2示出了在不需要检测面板时第二连接部与第三连接部交叠区域的剖面示意图；
图3示出了在检测面板异常时第二连接部与第三连接部交叠区域的剖面示意图；
图4示出了本发明实施例栅极驱动电路的检测方法的流程示意图。
具体实施方式
以下将结合附图及实施例来详细说明本发明的实施方式，借此对本发明如何应用技术手段来解决技术问题，并达成技术效果的实现过程能充分理解并据以实施。需要说明的是，只要不构成冲突，本发明中的各个实施例以及各实施例中的各个特征可以相互结合，所形成的技术方案均在本发明的保护范围之内。
本发明所要解决的技术问题是：由于现有技术将栅极驱动电路的输出端始终与由大块 金属构成的测试垫连接在一起，因此在产品生产运输等过程中，由栅极驱动电路的输出端4始终与测试垫5连接导致的静电释放(ESD)容易导入栅极驱动电路，导致构成栅极驱动电路的薄膜晶体管的击穿和损坏。为解决上述技术问题，本发明实施例提供了一种栅极驱动电路的检测装置。
实施例一
图1示出了本实施例栅极驱动电路检测装置的结构示意图。如图1所示，本发明实施例栅极驱动电路的检测装置主要包括第一连接部11、第二连接部12和第三连接部21。其中，第一连接部11、第二连接部12和第三连接部21均为金属连接部。第一连接部11和第二连接部12设置在第一金属层。即，第一金属层包括第一连接部11的图案和第二连接部12的图案。并且，第一连接部11和第二连接部12之间间隔设置。第三连接部21设置在第二金属层。这里，第二金属层和第一金属层是不同的金属层。即，第二金属层包括第三连接部21的图案。如图2所示，第一金属层和第二金属层之间设置有绝缘层30。
第一连接部11的第一端与栅极驱动电路的输出端4电性连接。即，第一连接部11的第一端与被测对象(即栅极驱动电路)电性连接。第二连接部12的第一端与测试垫5电性连接。
第一连接部11的第二端通过设置在绝缘层30上的过孔31与第三连接部21电性连接。这样，第一连接部11的第二端始终与第三连接部21电性连接。
这里，在本发明一优选的实施例中，第一连接部11的第二端通过设置在绝缘层30上的至少两个过孔31与第三连接部21电性连接。这里，过孔31的数量为大于或者等于2的整数。可见本实施例有利于保证第一连接部11与第三连接部21的可靠连接，从而使得信号传输得更稳定、可靠。
重要地，第二连接部12的第二端与第三连接部21电性绝缘。本实施例中，第三连接部21与第二连接部12之间通过绝缘层30隔离。
应用本发明实施例提供的栅极驱动电路检测装置，在液晶显示面板的常态(即不需要检测面板异常时)下，第二连接部12的第二端与第三连接部21电性绝缘，从而栅极驱动电路的输出端4与测试垫5电性绝缘。这样，由栅极驱动电路的输出端4始终与测试垫5连接导致的静电释放不会传导到栅极驱动电路中，也就不会对栅极驱动电路造成破坏，从而避免了构成栅极驱动电路的薄膜晶体管的击穿与损坏。换句话说，本发明实施例有利于提高液晶显示面板的产品良率。
实施例二
本实施例对实施例一中检测装置的结构做进一步优化。
在本实施例中，当液晶面板出现异常，需要查找异常的原因而检测电性时，第二连接部12的第二端与第三连接部21之间的绝缘材料(即绝缘层30中的绝缘材料)通过镭射而熔化，以使得第二连接部12的第二端与第三连接部21电性连接。
图2示出了在不需要检测面板时第二连接部12与第三连接部21交叠区域的剖面示意图。参照图2，在不需要检测面板时，由于绝缘层30的作用，第二连接部12的第二端与第三连接部21彼此绝缘。图3示出了在检测面板异常时第二连接部12与第三连接部21交叠区域的剖面示意图。参照图3，在检测面板异常时，通过镭射的方法熔化第三连接部21与第二连接部12的第二端之间的绝缘材料。
具体地，镭射(激光)具有高亮度、高方向性、高单色性和高相干性的特性。激光束能在第三连接部21的正上方产生数千度乃至上万度的高温。第三连接部21表面被激光束照射的区域开始溶解，从而形成流动的液态金属。该液态金属穿过(相当于熔解)绝缘层30后与第二连接部12熔接在一起。这样，第二连接部12的第二端与第三连接部21能够电性连接。可见，通过镭射熔接的作用，使得第二连接部12的第二端与第三连接部21导通，从而使第二连接部12的第二端与第三连接部21电性导通。
可以看出，在不需要检测面板时，第三连接部21与第二连接部12的第二端电性绝缘。只有在检测面板异常时，第三连接部21与第二连接部12的第二端才电性导通。
于是，在第三连接部21与第二连接部12的第二端电性导通后，即形成了以下信号传输通道：栅极驱动电路的输出端4—第一连接部11—第三连接部21—第二连接部12—测试垫5。即，栅极驱动电路的输出信号依次通过第一连接部11、第三连接部21和第二连接部12传导到测试垫5上。上述信号传输通道只有在检测面板异常时才形成。这样，能够避免现有技术中由栅极驱动电路的输出端4始终与测试垫5连接导致的静电释放对栅极驱动电路的破坏，从而避免了构成栅极驱动电路的薄膜晶体管的击穿与损坏。
在本实施例中，巧妙地采用镭射熔接的方式，在检测面板异常时使第二连接部12的第二端与第三连接部21电性导通。
应用本实施例的检测装置，第三连接部21相当于用于使第一连接部11和第二连接部12在检测面板异常时才电性连接的一次性开关。可见，在不需要检测面板时，第一连接部11与第二连接部12彼此断开。只有在检测面板异常时，才通过第三连接部21使第一连接部11和第二连接部12电性连接，以使栅极驱动电路输出端4的输出信号依次通过第 一连接部11、第三连接部21和第二连接部12传导到测试垫5上。
因此，由栅极驱动电路的输出端4始终与测试垫5连接导致的静电释放不会传导到栅极驱动电路中，也就不会对栅极驱动电路造成破坏，从而避免了构成栅极驱动电路的薄膜晶体管的击穿与损坏。换句话说，本发明实施例有利于提高液晶显示面板的产品良率。
此外，本实施例中各连接部的连接结构简单不复杂，有利于在检测面板异常时输出信号到测试垫5的有效传输。
实施例三
本实施例在实施例一或实施例二的基础上，对第一金属层和第二金属层的图案，以及各金属和绝缘层30的材料进行了优化。
在本实施例中，第一金属层除了包括第一连接部11的图案和第二连接部12的图案外，还包括显示面板的扫描线的图案以及显示面板的开关元件的栅极的图案。即，第一连接部11、第二连接部12与显示面板的扫描线和开关元件的栅极同层设置。可见，本实施例有利于减少显示面板的制作工艺。这里，第一金属层优选采用钼/铝双层金属结构形成，但本发明并不限制于此。例如，第一金属层也可采用钼/钨双层金属结构或铝单层金属结构形成。
在本实施例中，第二金属层除了包括第三连接部21的图案外，还包括显示面板的数据线的图案以及显示面板的开关元件的源极和漏极的图案。即，第三连接部21与显示面板的数据线和开关元件的漏极和源极同层设置。可见，本实施例有利于减少显示面板的制作工艺。这里，第二金属层优选采用钼/铝/锗三层金属结构形成，但本发明并不限制于此。例如，第二金属层也可采用钛/铝/钛三层金属结构。
在本实施例中，绝缘层30可以由氮化硅制成。绝缘层30的材料也可为氮化硅(SiNx)和氧化硅(SiOx)中的一种或两种。需要说明的是，本发明实施例并不限制绝缘层30的材料，只要是所采用的绝缘层30的材料性能可以满足栅极驱动电路的检测装置的性能要求即可。
实施例四
本实施例提供了基于上述实施例一、实施例二或者实施例三中栅极驱动电路的检测装置的检测方法。
图4示出了本发明实施例栅极驱动电路的检测方法的流程示意图。参照图4，本实施例栅极驱动电路的检测方法主要包括步骤S101至步骤S103。
结合图1至图3，在步骤101中，提供一检测装置，并使检测装置包括测试垫5及电连接栅极驱动电路和测试垫5的连接件。连接件包括第一连接部11、第二连接部12和第三连接部21。其中，第一金属层包括第一连接部11的图案和第二连接部12的图案，第二金属层包括第三连接部21的图案，并且，第一金属层和第二金属层之间设置有绝缘层30。此外，第一连接部11的第一端与栅极驱动电路的输出端4电性连接，第二连接部12的第一端与测试垫5电性连接。第一连接部11的第二端与第三连接部21电性连接，第二连接部12的第二端与第三连接部21电性绝缘。
具体地，此步骤中提供的检测装置为上述实施例一至实施例三中任意一个实施例的检测装置。
在步骤102中，判断是否需要检测栅极驱动电路。
在步骤103中，在步骤102判断出需要检测栅极驱动电路时，通过镭射熔化第二连接部12的第二端与第三连接部21之间的绝缘材料，以使第二连接部12的第二端与第三连接部21电性连接，从而使栅极驱动电路的输出信号依次经过连接件和测试垫5输出。在步骤102判断出不需要检测栅极驱动电路时，返回步骤102继续进行上述判断。在一优选的实施例中，上述方法还包括根据测试垫5输出的信号，确定栅极驱动电路的状态。
具体地，镭射(激光)具有高亮度、高方向性、高单色性和高相干性的特性。激光束能在第三连接部21的正上方产生数千度乃至上万度的高温。第三连接部21表面被激光束照射的区域开始溶解，从而形成流动的液态金属。该液态金属穿过绝缘层30后与第二连接部12熔接在一起。这样，第二连接部12的第二端与第三连接部21能够电性连接。可见，通过镭射熔接的作用，使得第二连接部12的第二端与第三连接部21导通，从而使第二连接部12的第二端与第三连接部21电性导通。
于是，即形成了以下信号传输通道：栅极驱动电路的输出端4—第一连接部11—第三连接部21—第二连接部12—测试垫5。即，栅极驱动电路的输出信号依次通过第一连接部11、第三连接部21和第二连接部12传导到测试垫5上。第二连接部12与第三连接部21只在检测面板异常时才电性导通。因此，能够避免现有技术中由栅极驱动电路的输出端4始终与测试垫5连接导致的静电释放对栅极驱动电路的破坏，进而避免了构成栅极驱动电路的薄膜晶体管的击穿与损坏。
应用本实施例，巧妙地采用镭射熔接的方式，在检测面板异常时使第二连接部12的 第二端与第三连接部21电性导通。
总体来讲，应用本发明实施例提供的栅极驱动电路检测方法，所提供的检测装置包括的第三连接部21相当于用于使第一连接部11和第二连接部12在检测面板异常时才电性连接的一次性开关。可见，在不需要检测面板时，第一连接部11与第二连接部12彼此断开。只有在检测面板异常时，才通过第三连接部21使第一连接部11和第二连接部12电性连接，以使栅极驱动电路输出端4的输出信号依次通过第一连接部11、第三连接部21和第二连接部12传导到测试垫5上。
因此，由栅极驱动电路的输出端4始终与测试垫5连接导致的静电释放不会传导到栅极驱动电路中，也就不会对栅极驱动电路造成破坏，从而避免了构成栅极驱动电路的薄膜晶体管的击穿与损坏。换句话说，本实施例有利于提高液晶显示面板的产品良率。
虽然本发明所公开的实施方式如上，但所述的内容只是为了便于理解本发明而采用的实施方式，并非用以限定本发明。任何本发明所属技术领域内的技术人员，在不脱离本发明所公开的精神和范围的前提下，可以在实施的形式上及细节上作任何的修改与变化，但本发明的保护范围，仍须以所附的权利要求书所界定的范围为准。

Claims (16)

  1. 一种栅极驱动电路的检测装置，包括测试垫及电连接所述栅极驱动电路和所述测试垫的连接件，所述连接件包括第一连接部、第二连接部和第三连接部；
    其中，所述第一连接部的第一端与所述栅极驱动电路的输出端电性连接，所述第二连接部的第一端与所述测试垫电性连接；
    所述第一连接部的第二端与所述第三连接部电性连接，所述第二连接部的第二端与所述第三连接部电性绝缘。
  2. 根据权利要求1所述的检测装置，其中，所述第一连接部和所述第二连接部设置在第一金属层，所述第三连接部设置在第二金属层，且所述第一金属层和第二金属层绝缘设置。
  3. 根据权利要求2所述的检测装置，其中，所述第一金属层和第二金属层之间设置有绝缘层，以使所述第一金属层和第二金属层绝缘设置。
  4. 根据权利要求3所述的检测装置，其中，所述绝缘层上设置有至少一个过孔，所述第一连接部的第二端通过所述过孔与所述第三连接部电性连接。
  5. 根据权利要求2所述的检测装置，其中，所述第一金属层还包括显示面板的扫描线的图案以及所述显示面板的开关元件的栅极的图案。
  6. 根据权利要求2所述的检测装置，其中，所述第二金属层还包括显示面板的数据线的图案以及所述显示面板的开关元件的源极和漏极的图案。
  7. 根据权利要求2所述的检测装置，其中，所述绝缘层由氮化硅制成；和/或
    所述第一金属层由钼/铝制成，所述第二金属层由钼/铝/锗制成。
  8. 根据权利要求1所述的检测装置，其中，
    在检测面板异常时，所述第二连接部的第二端与所述第三连接部之间的绝缘材料通过镭射被熔化，以使得所述第二连接部的第二端与所述第三连接部电性连接。
  9. 根据权利要求2所述的检测装置，其中，
    在检测面板异常时，所述第二连接部的第二端与所述第三连接部之间的绝缘材料通过镭射被熔化，以使得所述第二连接部的第二端与所述第三连接部电性连接。
  10. 根据权利要求3所述的检测装置，其中，
    在检测面板异常时，所述第二连接部的第二端与所述第三连接部之间的绝缘材料通过 镭射被熔化，以使得所述第二连接部的第二端与所述第三连接部电性连接。
  11. 根据权利要求4所述的检测装置，其中，
    在检测面板异常时，所述第二连接部的第二端与所述第三连接部之间的绝缘材料通过镭射被熔化，以使得所述第二连接部的第二端与所述第三连接部电性连接。
  12. 根据权利要求5所述的检测装置，其中，
    在检测面板异常时，所述第二连接部的第二端与所述第三连接部之间的绝缘材料通过镭射被熔化，以使得所述第二连接部的第二端与所述第三连接部电性连接。
  13. 根据权利要求6所述的检测装置，其中，
    在检测面板异常时，所述第二连接部的第二端与所述第三连接部之间的绝缘材料通过镭射被熔化，以使得所述第二连接部的第二端与所述第三连接部电性连接。
  14. 根据权利要求7所述的检测装置，其中，
    在检测面板异常时，所述第二连接部的第二端与所述第三连接部之间的绝缘材料通过镭射被熔化，以使得所述第二连接部的第二端与所述第三连接部电性连接。
  15. 一种栅极驱动电路的检测方法，包括：
    提供一检测装置，并使所述检测装置包括测试垫及电连接所述栅极驱动电路和所述测试垫的连接件，所述连接件包括第一连接部、第二连接部和第三连接部；其中，所述第一连接部的第一端与所述栅极驱动电路的输出端电性连接，所述第二连接部的第一端与所述测试垫电性连接；所述第一连接部的第二端与所述第三连接部电性连接，所述第二连接部的第二端与所述第三连接部电性绝缘；
    判断是否需要检测所述栅极驱动电路；
    在判断出需要检测所述栅极驱动电路时，通过镭射熔化所述第二连接部的第二端与所述第三连接部之间的绝缘材料，以使所述第二连接部的第二端与所述第三连接部电性连接，从而使栅极驱动电路的输出信号依次经过所述连接件和所述测试垫输出。
  16. 根据权利要求15所述的检测方法，其中，还包括：
    根据所述测试垫输出的信号，确定所述栅极驱动电路的状态。
PCT/CN2017/076553 2017-02-23 2017-03-14 栅极驱动电路的检测装置及检测方法 Ceased WO2018152882A1 (zh)

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