WO2018152728A1 - Cigs thin-film solar cell - Google Patents

Cigs thin-film solar cell Download PDF

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WO2018152728A1
WO2018152728A1 PCT/CN2017/074542 CN2017074542W WO2018152728A1 WO 2018152728 A1 WO2018152728 A1 WO 2018152728A1 CN 2017074542 W CN2017074542 W CN 2017074542W WO 2018152728 A1 WO2018152728 A1 WO 2018152728A1
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layer
solar cell
zno window
film solar
cigs
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PCT/CN2017/074542
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French (fr)
Chinese (zh)
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张强强
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海门黄海创业园服务有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • the invention belongs to the field of photovoltaic technology, and in particular relates to a CIGS thin film solar cell.
  • Solar cells also known as “solar chips” or “photovoltaic cells” are optoelectronic semiconductor wafers that use solar light to generate electricity directly. As long as they are illuminated by certain illuminance conditions, they can output voltage instantaneously and in the presence of loops. The current is generated, which is called Photovoltaic (PV), or PV for short.
  • PV Photovoltaic
  • a solar cell is a device that directly converts light energy into electrical energy through a photoelectric effect or a photochemical effect.
  • the crystalline silicon solar cell operating with photoelectric effect is the mainstream, while the solar cell operating with the photochemical effect is still in its infancy.
  • CIGS thin-film solar cells which are composed of Cu (copper), In (indium), Ga (gallium), and Se (selenium), constitute the best proportion of chalcopyrite crystalline thin-film solar cells, which is the key technology for composing panels. Due to its strong light absorption capacity, good power generation stability, high conversion efficiency, long daytime power generation, high power generation, low production cost and short energy recovery cycle, CIGS solar cells are the future of solar cell products. Star can compete with traditional crystalline silicon solar cells. However, the conductivity and light transmittance of the CIGS thin film solar cell in the prior art are greatly affected by the n-type layer, which limits the photoelectric conversion efficiency of the CIGS thin film solar cell to some extent.
  • the present invention provides a CIGS thin film solar cell.
  • the present invention provides a CIGS thin film solar cell, which in turn comprises:
  • the ZnO window layer includes a first ZnO window layer and a second ZnO window layer on the first ZnO window layer, wherein the first ZnO window layer has a higher resistance than the second ZnO The resistance of the window layer;
  • a CdS buffer layer is further disposed between the CIGS absorber layer and the ZnO window layer.
  • the first electrode layer is a Cu electrode layer
  • the second electrode layer is a Ni-Al alloy electrode layer.
  • the anti-reflection layer is a MgF 2 anti-reflection layer.
  • the substrate is a glass substrate.
  • the CIGS absorber layer has a thickness of from 1,000 to 2,000 nm.
  • the first ZnO window has a thickness of 10 to 100 nm
  • the second ZnO window has a thickness of 200 to 300 nm.
  • the CIGS thin film solar cell of the invention has high electrical conductivity and light transmittance, low manufacturing cost, stable performance, strong anti-irradiation ability and superior photoelectric performance.
  • FIG. 1 is a schematic structural view of a CIGS thin film solar cell according to an embodiment of the present invention.
  • a CIGS thin film solar cell As shown in FIG. 1 , a CIGS thin film solar cell according to an embodiment of the present invention, the CIGS thin film solar cell includes:
  • the ZnO window layer 40 on the absorption layer of the CIGS, the ZnO window layer 40 in the present invention comprises a first ZnO window layer 41 and a second ZnO window layer 42 on the first ZnO window layer, wherein the first ZnO window layer The resistance is higher than the resistance of the second ZnO window layer;
  • a CdS buffer layer 70 is further disposed between the CIGS absorber layer 30 and the ZnO window layer 40 in the present embodiment for reducing the energy band discontinuity between the CIGS absorber layer 30 and the ZnO window layer 40.
  • the first electrode layer 20 is a Cu electrode layer
  • the second electrode layer 60 is a Ni-Al alloy electrode layer
  • the anti-reflection layer 50 is a MgF 2 anti-reflection layer.
  • the substrate 10 is a glass substrate. Of course, other materials may be used in other embodiments.
  • the material is used as a substrate, such as a ceramic substrate or the like.
  • the CIGS absorber layer acts as a p-type absorber layer, and the ZnO window layer 40 is a direct bandgap semiconductor material as a heterojunction n-type region.
  • the thickness of the CIGS absorber layer in the present embodiment is 1000 to 2000 nm
  • the thickness of the first ZnO window is 10 to 100 nm
  • the thickness of the second ZnO window is 200 to 300 nm.
  • the conductivity and light transmittance of the window layer can be greatly improved by providing two layers of window layers.
  • the CIGS thin film solar cell of the invention has high electrical conductivity and light transmittance, low manufacturing cost, stable performance, strong anti-irradiation ability and superior photoelectric performance.

Abstract

A CIGS thin-film solar cell, comprising in sequence: a substrate (10); a first electrode layer (20) positioned on the substrate; a CIGS absorption layer (30) positioned on the first electrode layer; a ZnO window layer (40) positioned on the CIGS absorption layer; the ZnO window layer comprises a first ZnO window layer (41) and a second ZnO window layer (42) positioned on the first ZnO window layer, the electrical resistance of the first ZnO window layer being greater than the electrical resistance of the second ZnO window layer; a reflection reducing layer (50) positioned on the ZnO window layer; and a second electrode layer (60) positioned on the reflection reducing layer. The present CIGS thin-film solar cell has strong conductivity and light transmittance, low manufacturing costs, stable performance, a strong anti-irradiation capability, and excellent photoelectric properties.

Description

一种CIGS薄膜太阳能电池CIGS thin film solar cell 技术领域Technical field
本发明属于光伏技术领域，特别是涉及一种CIGS薄膜太阳能电池。The invention belongs to the field of photovoltaic technology, and in particular relates to a CIGS thin film solar cell.
背景技术Background technique
太阳能电池又称为“太阳能芯片”或“光电池”，是一种利用太阳光直接发电的光电半导体薄片，它只要被满足一定照度条件的光照到，瞬间就可输出电压及在有回路的情况下产生电流，在物理学上称为太阳能光伏(Photovoltaic，缩写为PV)，简称光伏。Solar cells, also known as "solar chips" or "photovoltaic cells", are optoelectronic semiconductor wafers that use solar light to generate electricity directly. As long as they are illuminated by certain illuminance conditions, they can output voltage instantaneously and in the presence of loops. The current is generated, which is called Photovoltaic (PV), or PV for short.
太阳能电池是通过光电效应或者光化学效应直接把光能转化成电能的装置。以光电效应工作的晶硅太阳能电池为主流，而以光化学效应工作的薄膜电池实施太阳能电池则还处于萌芽阶段。A solar cell is a device that directly converts light energy into electrical energy through a photoelectric effect or a photochemical effect. The crystalline silicon solar cell operating with photoelectric effect is the mainstream, while the solar cell operating with the photochemical effect is still in its infancy.
CIGS薄膜太阳能电池，由Cu(铜)、In(铟)、Ga(镓)、Se(硒)四种元素构成最佳比例的黄铜矿结晶薄膜太阳能电池，是组成电池板的关键技术。由于该产品具有光吸收能力强，发电稳定性好、转化效率高，白天发电时间长、发电量高、生产成本低以及能源回收周期短等诸多优势，CIGS太阳能电池已是太阳能电池产品的明日之星，可以与传统的晶硅太阳能电池相抗衡。然而现有技术中的CIGS薄膜太阳能电池的电导率和光透过率受n型层的影响较大，这在一定程度上制约了CIGS薄膜太阳能电池的光电转换效率。CIGS thin-film solar cells, which are composed of Cu (copper), In (indium), Ga (gallium), and Se (selenium), constitute the best proportion of chalcopyrite crystalline thin-film solar cells, which is the key technology for composing panels. Due to its strong light absorption capacity, good power generation stability, high conversion efficiency, long daytime power generation, high power generation, low production cost and short energy recovery cycle, CIGS solar cells are the future of solar cell products. Star can compete with traditional crystalline silicon solar cells. However, the conductivity and light transmittance of the CIGS thin film solar cell in the prior art are greatly affected by the n-type layer, which limits the photoelectric conversion efficiency of the CIGS thin film solar cell to some extent.
因此，针对上述问题，有必要提出一种CIGS薄膜太阳能电池。Therefore, in view of the above problems, it is necessary to propose a CIGS thin film solar cell.
发明内容Summary of the invention
有鉴于此，本发明提供了一种CIGS薄膜太阳能电池。In view of this, the present invention provides a CIGS thin film solar cell.
为了实现上述发明目的，本发明提供一种CIGS薄膜太阳能电池，所述CIGS薄膜太阳能电池依次包括： In order to achieve the above object, the present invention provides a CIGS thin film solar cell, which in turn comprises:
衬底；Substrate
位于衬底上的第一电极层；a first electrode layer on the substrate;
位于第一电极层上的CIGS吸收层；a CIGS absorber layer on the first electrode layer;
位于CIGS吸收层上的ZnO窗口层，所述ZnO窗口层包括第一ZnO窗口层及位于第一ZnO窗口层上的第二ZnO窗口层，其中，第一ZnO窗口层的电阻高于第二ZnO窗口层的电阻；a ZnO window layer on the CIGS absorber layer, the ZnO window layer includes a first ZnO window layer and a second ZnO window layer on the first ZnO window layer, wherein the first ZnO window layer has a higher resistance than the second ZnO The resistance of the window layer;
位于ZnO窗口层上的减反射层；An anti-reflection layer on the ZnO window layer;
以及，位于减反射层上的第二电极层。And a second electrode layer on the anti-reflection layer.
作为本发明的进一步改进，所述CIGS吸收层与ZnO窗口层之间还设有CdS缓冲层。As a further improvement of the present invention, a CdS buffer layer is further disposed between the CIGS absorber layer and the ZnO window layer.
作为本发明的进一步改进，所述第一电极层为Cu电极层，第二电极层为Ni-Al合金电极层。As a further improvement of the present invention, the first electrode layer is a Cu electrode layer, and the second electrode layer is a Ni-Al alloy electrode layer.
作为本发明的进一步改进，所述减反射层为MgF2减反射层。As a further improvement of the present invention, the anti-reflection layer is a MgF 2 anti-reflection layer.
作为本发明的进一步改进，所述衬底为玻璃衬底。As a further improvement of the invention, the substrate is a glass substrate.
作为本发明的进一步改进，所述CIGS吸收层的厚度为1000～2000nm。As a further improvement of the present invention, the CIGS absorber layer has a thickness of from 1,000 to 2,000 nm.
作为本发明的进一步改进，所述第一ZnO窗口的厚度为10～100nm，第二ZnO窗口的厚度为200～300nm。As a further improvement of the present invention, the first ZnO window has a thickness of 10 to 100 nm, and the second ZnO window has a thickness of 200 to 300 nm.
与现有技术相比，本发明的有益效果是：Compared with the prior art, the beneficial effects of the present invention are:
本发明的CIGS薄膜太阳能电池具有较高的电导率和光透过率，制造成本低、性能稳定、且抗辐照能力较强，具有优越的光电性能。The CIGS thin film solar cell of the invention has high electrical conductivity and light transmittance, low manufacturing cost, stable performance, strong anti-irradiation ability and superior photoelectric performance.
附图说明DRAWINGS
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面 描述中的附图仅仅是本发明中记载的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the description of the prior art will be briefly described below, obviously, the following The drawings in the description are only some of the embodiments described in the present invention, and those skilled in the art can obtain other drawings based on these drawings without any creative work.
图1为本发明一具体实施方式中CIGS薄膜太阳能电池的结构示意图。1 is a schematic structural view of a CIGS thin film solar cell according to an embodiment of the present invention.
具体实施方式detailed description
下面将对本发明实施例中的技术方案进行详细的描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。The technical solutions in the embodiments of the present invention will be described in detail below. It is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments of the present invention without creative efforts are within the scope of the present invention.
参图1所示，本发明一具体实施方式中的一种CIGS薄膜太阳能电池，该CIGS薄膜太阳能电池依次包括：As shown in FIG. 1 , a CIGS thin film solar cell according to an embodiment of the present invention, the CIGS thin film solar cell includes:
衬底10； Substrate 10;
位于衬底上的第一电极层20；a first electrode layer 20 on the substrate;
位于第一电极层上的CIGS吸收层30；a CIGS absorber layer 30 on the first electrode layer;
位于CIGS吸收层上的ZnO窗口层40，本发明中的ZnO窗口层40包括第一ZnO窗口层41及位于第一ZnO窗口层上的第二ZnO窗口层42，其中，第一ZnO窗口层的电阻高于第二ZnO窗口层的电阻；The ZnO window layer 40 on the absorption layer of the CIGS, the ZnO window layer 40 in the present invention comprises a first ZnO window layer 41 and a second ZnO window layer 42 on the first ZnO window layer, wherein the first ZnO window layer The resistance is higher than the resistance of the second ZnO window layer;
位于ZnO窗口层40上的减反射层50；An anti-reflection layer 50 on the ZnO window layer 40;
以及，位于减反射层50上的第二电极层60。And a second electrode layer 60 on the anti-reflection layer 50.
优选地，本实施方式中的CIGS吸收层30与ZnO窗口层40之间还设有CdS缓冲层70，用于降低CIGS吸收层30与ZnO窗口层40之间的能带不连续现象。Preferably, a CdS buffer layer 70 is further disposed between the CIGS absorber layer 30 and the ZnO window layer 40 in the present embodiment for reducing the energy band discontinuity between the CIGS absorber layer 30 and the ZnO window layer 40.
本实施方式中的第一电极层20为Cu电极层，第二电极层60为Ni-Al合金电极层，减反射层50为MgF2减反射层。In the present embodiment, the first electrode layer 20 is a Cu electrode layer, the second electrode layer 60 is a Ni-Al alloy electrode layer, and the anti-reflection layer 50 is a MgF 2 anti-reflection layer.
其中，衬底10为玻璃衬底，当然，在其他实施方式中也可以采用其他材 料作为衬底，如陶瓷基板等。The substrate 10 is a glass substrate. Of course, other materials may be used in other embodiments. The material is used as a substrate, such as a ceramic substrate or the like.
CIGS吸收层作为p型吸收层，ZnO窗口层40是直接带隙半导体材料，作为异质结n型区。优选地，本实施方式中的CIGS吸收层的厚度为1000～2000nm，第一ZnO窗口的厚度为10～100nm，第二ZnO窗口的厚度为200～300nm。通过设置两层窗口层可以大大提高窗口层的电导率和光透过率。The CIGS absorber layer acts as a p-type absorber layer, and the ZnO window layer 40 is a direct bandgap semiconductor material as a heterojunction n-type region. Preferably, the thickness of the CIGS absorber layer in the present embodiment is 1000 to 2000 nm, the thickness of the first ZnO window is 10 to 100 nm, and the thickness of the second ZnO window is 200 to 300 nm. The conductivity and light transmittance of the window layer can be greatly improved by providing two layers of window layers.
由以上技术方案可以看出，本发明的CIGS薄膜太阳能电池具有较高的电导率和光透过率，制造成本低、性能稳定、且抗辐照能力较强，具有优越的光电性能。It can be seen from the above technical solutions that the CIGS thin film solar cell of the invention has high electrical conductivity and light transmittance, low manufacturing cost, stable performance, strong anti-irradiation ability and superior photoelectric performance.
对于本领域技术人员而言，显然本发明不限于上述示范性实施例的细节，而且在不背离本发明的精神或基本特征的情况下，能够以其他的具体形式实现本发明。因此，无论从哪一点来看，均应将实施例看作是示范性的，而且是非限制性的，本发明的范围由所附权利要求而不是上述说明限定，因此旨在将落在权利要求的等同要件的含义和范围内的所有变化囊括在本发明内。不应将权利要求中的任何附图标记视为限制所涉及的权利要求。It is apparent to those skilled in the art that the present invention is not limited to the details of the above-described exemplary embodiments, and the present invention can be embodied in other specific forms without departing from the spirit or essential characteristics of the invention. Therefore, the present embodiments are to be considered as illustrative and not restrictive, and the scope of the invention is defined by the appended claims instead All changes in the meaning and scope of equivalent elements are included in the present invention. Any reference signs in the claims should not be construed as limiting the claim.
此外，应当理解，虽然本说明书按照实施方式加以描述，但并非每个实施方式仅包含一个独立的技术方案，说明书的这种叙述方式仅仅是为清楚起见，本领域技术人员应当将说明书作为一个整体，各实施例中的技术方案也可以经适当合，形成本领域技术人员可以理解的其他实施方式。 In addition, it should be understood that although the description is described in terms of embodiments, not every embodiment includes only one independent technical solution. The description of the specification is merely for the sake of clarity, and those skilled in the art should regard the specification as a whole. The technical solutions in the respective embodiments may also be combined to form other embodiments that can be understood by those skilled in the art.

Claims (7)

  1. 一种CIGS薄膜太阳能电池，其特征在于，所述CIGS薄膜太阳能电池依次包括：A CIGS thin film solar cell, characterized in that the CIGS thin film solar cell comprises:
    衬底；Substrate
    位于衬底上的第一电极层；a first electrode layer on the substrate;
    位于第一电极层上的CIGS吸收层；a CIGS absorber layer on the first electrode layer;
    位于CIGS吸收层上的ZnO窗口层，所述ZnO窗口层包括第一ZnO窗口层及位于第一ZnO窗口层上的第二ZnO窗口层，其中，第一ZnO窗口层的电阻高于第二ZnO窗口层的电阻；a ZnO window layer on the CIGS absorber layer, the ZnO window layer includes a first ZnO window layer and a second ZnO window layer on the first ZnO window layer, wherein the first ZnO window layer has a higher resistance than the second ZnO The resistance of the window layer;
    位于ZnO窗口层上的减反射层；An anti-reflection layer on the ZnO window layer;
    以及，位于减反射层上的第二电极层。And a second electrode layer on the anti-reflection layer.
  2. 根据权利要求1所述的一种CIGS薄膜太阳能电池，其特征在于，所述CIGS吸收层与ZnO窗口层之间还设有CdS缓冲层。The CIGS thin film solar cell according to claim 1, wherein a CdS buffer layer is further disposed between the CIGS absorber layer and the ZnO window layer.
  3. 根据权利要求1所述的一种CIGS薄膜太阳能电池，其特征在于，所述第一电极层为Cu电极层，第二电极层为Ni-Al合金电极层。The CIGS thin film solar cell according to claim 1, wherein the first electrode layer is a Cu electrode layer, and the second electrode layer is a Ni-Al alloy electrode layer.
  4. 根据权利要求1所述的一种CIGS薄膜太阳能电池，其特征在于，所述减反射层为MgF2减反射层。A CIGS thin film solar cell according to claim 1, wherein the antireflection layer is a MgF2 antireflection layer.
  5. 根据权利要求1所述的一种CIGS薄膜太阳能电池，其特征在于，所述衬底为玻璃衬底。A CIGS thin film solar cell according to claim 1, wherein said substrate is a glass substrate.
  6. 根据权利要求1所述的一种CIGS薄膜太阳能电池，其特征在于，所述CIGS吸收层的厚度为1000～2000nm。A CIGS thin film solar cell according to claim 1, wherein the CIGS absorber layer has a thickness of 1000 to 2000 nm.
  7. 根据权利要求1所述的一种CIGS薄膜太阳能电池，其特征在于，所述第一ZnO窗口的厚度为10～100nm，第二ZnO窗口的厚度为200～300nm。 The CIGS thin film solar cell according to claim 1, wherein the first ZnO window has a thickness of 10 to 100 nm, and the second ZnO window has a thickness of 200 to 300 nm.
PCT/CN2017/074542 2017-02-23 2017-02-23 Cigs thin-film solar cell WO2018152728A1 (en)

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CN102544138A (en) * 2012-02-08 2012-07-04 南开大学 Copper indium gallium selenium thin film solar cell provided with aluminum nitride (AIN) thin film layer
CN102856427A (en) * 2012-03-21 2013-01-02 郭丰亮 Printed thin-film solar cell and production
CN105355676A (en) * 2015-11-18 2016-02-24 北京四方创能光电科技有限公司 Back electrode structure of flexible CIGS thin-film solar cell
CN106409934A (en) * 2016-07-07 2017-02-15 天津理工大学 Preparation method of CIGS solar cell absorption layer

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CN101944541A (en) * 2009-07-08 2011-01-12 深圳先进技术研究院 Thin-film photovoltaic cell and manufacturing method thereof
CN102544138A (en) * 2012-02-08 2012-07-04 南开大学 Copper indium gallium selenium thin film solar cell provided with aluminum nitride (AIN) thin film layer
CN102856427A (en) * 2012-03-21 2013-01-02 郭丰亮 Printed thin-film solar cell and production
CN105355676A (en) * 2015-11-18 2016-02-24 北京四方创能光电科技有限公司 Back electrode structure of flexible CIGS thin-film solar cell
CN106409934A (en) * 2016-07-07 2017-02-15 天津理工大学 Preparation method of CIGS solar cell absorption layer

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