CN102856427A - Printed thin-film solar cell and production - Google Patents
Printed thin-film solar cell and production Download PDFInfo
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- CN102856427A CN102856427A CN201210075633XA CN201210075633A CN102856427A CN 102856427 A CN102856427 A CN 102856427A CN 201210075633X A CN201210075633X A CN 201210075633XA CN 201210075633 A CN201210075633 A CN 201210075633A CN 102856427 A CN102856427 A CN 102856427A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses printed thin-film solar cell and production. The printed thin-film solar cell comprises a glass substrate, a conductive layer (MO), an absorption layer (CIGS), a transition layer (CdS), a window layer (i-ZnO), a window layer (n-ZnO) and an aluminum electrode (Al). A raw material coating for the printed thin-film solar cell and production adopts a CIS++G technology, solar raw materials are printed on a base material through a laminated printing mode, the photoelectricity conversion rate can be realized up to 9-10%, the photoelectricity conversion rate can break up by 12-16% through adopting an intelligent sensitization technology, great technology upgrading potential and development potential can be achieved, and the intelligent sensitization technology is a technology having the most development potential on the photoelectricity conversion rate of solar cells.
Description
Technical field
The present invention relates to area of solar cell, particularly relate to a kind of printing-type thin-film solar cells and making.
Background technology
The development of human society is accompanied by the increase of energy resource consumption, meanwhile, conventional energy resource (such as oil, coal etc.) reserves are reducing year by year, and use conventional energy resource to cause the pollution of environment and the deterioration of weather, cause the pollution of ball ecological environment, destruction is on the rise.Therefore, human research to regenerative resource, green energy resource, serve the meal and utilization seems more and more urgent, this wherein, solar energy is undoubtedly the primary selection of the human future energy.
Solar energy distributes the widest on earth, and reserves are maximum, stable, lasting, also are the most cheap regenerative resources.In the research of solar energy, photovoltaic technology is with fastest developing speed, most active research field in this year.1839, French physicist Becquerel found unexpectedly, enters the voltaic cell that solution consists of with two metals, produced extra voltaic electromotive force during illumination, and he is called " photovoltaic effect " to this phenomenon.1883, there is the people to find the solid photovoltaic effect at semiconductor selenium and metal connecting synapsis.Later on people namely play the device of effect and call " photovoltaic device " producing photovoltaic.Semiconductor PN device photoelectric conversion rate in the sun is the highest, usually claims this class photovoltaic device to be " solar cell ".
Silicon materials are leading materials of present solar cell, in finished product solar cell cost share, silicon materials have nearly accounted for 40%, and the thickness of amorphous silicon solar cell is less than 1 μ m, 1/100 of not enough crystal-silicon solar cell thickness, this just greatly reduces manufacturing cost, again because the manufacturing of amorphous silicon solar cell stable very low (~ 200 ℃), be easy to realize the advantages such as large tracts of land, make it in thin film solar cell, occupy space of top prominence, the electron cyclotron resonace method is arranged aspect manufacture method, the photo chemical vapor deposition method, the direct current glow discharge method, rf glow discharge method, spatter Xie Fa and heat wire method etc.
Summary of the invention
The technical problem that the present invention mainly solves provides a kind of printing-type thin-film solar cells and making, and the opto-electronic conversion 12-16% that adopted Intelligent light-sensitive technological break-through possesses great technology upgrading potentiality and development potentiality.
For solving the problems of the technologies described above, the technical scheme that the present invention adopts is: a kind of printing-type thin-film solar cells and making are provided.Comprise: be followed successively by from the bottom up: glass substrate (Glass), conductive layer (MO), absorbed layer (CIGS), transition zone (CdS), Window layer (i-ZnO), Window layer (n-ZnO), aluminium electrode (Al).In a preferred embodiment of the present invention: raw material adopts copper indium diselenide ++ gallium (CIS++G) dust grain hybrid technology, by the production technology of stack printing, with layer by layer silk screen printing of gallium on base material.
In a preferred embodiment of the present invention, obtain gallium by the separation of dust grain isolation technics, and apply in (CIS++G) material doped mixing.
In a preferred embodiment of the present invention, come the production thin-film solar cells with the numerical control print system in conjunction with silk-screen printing technique.
The invention has the beneficial effects as follows: the raw material coating of printing-type thin-film solar cells of the present invention and making adopts copper indium diselenide ++ gallium (CIS++G) technology, mode of printing is printed on the solar energy raw material on the base material by being layering, realize that photoelectric conversion rate is up to 9-10%, the opto-electronic conversion 12-16% that adopted Intelligent light-sensitive technological break-through, possessing great technology upgrading potentiality and development potentiality, is the technology that the thin-film solar cell photoelectric transfer ratio has development potentiality most.
Description of drawings
Fig. 1 is the structural representation of a kind of printing-type thin-film solar cells of the present invention and making;
Fig. 2 is a kind of printing-type thin-film solar cells of the present invention and makes complete process flow figure.
The mark of each parts is as follows in the accompanying drawing: 1, aluminium electrode, 2, Window layer (n-ZnO), 3, Window layer (i-ZnO), 4, transition zone (CdS), 5, absorbed layer (CIGS), 6, conductive layer (MO), 7, glass substrate (Glass).
Embodiment
Below in conjunction with accompanying drawing preferred embodiment of the present invention is described in detail, thereby so that advantages and features of the invention can be easier to be it will be appreciated by those skilled in the art that protection scope of the present invention is made more explicit defining.
As shown in Figure 1, a kind of printing-type thin-film solar cells and making comprise: be followed successively by from the bottom up: glass substrate (Glass), conductive layer (MO), absorbed layer (CIGS), transition zone (CdS), Window layer (i-ZnO), Window layer (n-ZnO), aluminium electrode (Al).
Further, what substrate was selected is common soda-lime glass, dilute hydrochloric acid solution ultrasonic cleaning 10 minutes, and deionized water ultrasonic cleaning 10 minutes, the super ultrasonic cleaning of acetone 10 minutes, deionized water ultrasonic cleaning 10 minutes, ethanol ultrasonic cleaning 10 minutes, high pressure air rifle dries up.
Further, target is 8 * 10 with the circular metal molybdenum target of purity 99.99% at ar pressure
-2Holder, sputtering power is 150W, sputter 3 minutes; Then regulate pressure to 10
-2Holder, sputtering power still is 150W, continues sputter 30 minutes.The Mo of preparation both had good adsorptivity with glass in this way, and lower resistivity is arranged again, and thickness is 1.1 μ m.
Further, raw material adopts copper indium diselenide ++ gallium (CIS++G) dust grain hybrid technology, by the production technology of stack printing, with layer by layer silk screen printing of gallium on conduction.
Further, immersion method precipitation transition zone CdS, the concentration of each composition of reactant liquor is respectively [CdSO
4]=0.01M, [(NH
2)
2CS]=0.1M, [NH
3H
2O]=1M.Bath temperature is controlled at 60 ℃ during precipitation, and thiocarbamide and ammonia spirit are dripped with buret, and the pH value of control solution deposits 20 minutes between 8 ~ 9, and rear taking-up sample cleans the attaching particles of removing the surface in deionized water for ultrasonic, and dehydration is also dry.Thickness is 100nm.
Further, the rf magnetron sputtering Window layer, target is 2% ZnO ceramic target with the Al mass percent, ar pressure is 5 * 10
-2Holder, sputtering power is 250W, sputter 5 minutes, the ZnO film thickness that obtains is 500nm.
Further, mask evaporation Al electrode is made the comb electrode mask plate with aluminium foil, first 150 ℃ of baking substrates, and vacuum thermal evaporation aluminium wire 0.2g then obtains the Al electrode of pectination at the cell substrate surface precipitation, and thickness is 2 μ m.It is very thin that electrode width will be done as far as possible, the smaller the better with the Area Ratio on clad battery surface.
Further, obtain gallium by the separation of dust grain isolation technics, and apply in (CIS++G) material doped mixing.
Further, come the production thin-film solar cells with the numerical control print system in conjunction with silk-screen printing technique.
The above only is embodiments of the invention; be not so limit claim of the present invention; every equivalent structure or equivalent flow process conversion that utilizes specification of the present invention and accompanying drawing content to do; or directly or indirectly be used in other relevant technical fields, all in like manner be included in the scope of patent protection of the present invention.
Claims (3)
1. a printing-type thin-film solar cells and making; comprise: be followed successively by from the bottom up: glass substrate (Glass); conductive layer (MO), absorbed layer (CIGS), transition zone (CdS); Window layer (i-ZnO); Window layer (n-ZnO), aluminium electrode (Al) is characterized in that: raw material adopts copper indium diselenide ++ gallium (CIS++G) dust grain hybrid technology; by the production technology of stack printing, with layer by layer silk screen printing of gallium on base material.
2. a kind of printing-type thin-film solar cells according to claim 1 and making is characterized in that: separate obtaining gallium by dust grain isolation technics, and apply in (CIS++G) material doped mixing.
3. a kind of printing-type thin-film solar cells according to claim 1 and making is characterized in that: come the production thin-film solar cells with the numerical control print system in conjunction with silk-screen printing technique.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210075633XA CN102856427A (en) | 2012-03-21 | 2012-03-21 | Printed thin-film solar cell and production |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210075633XA CN102856427A (en) | 2012-03-21 | 2012-03-21 | Printed thin-film solar cell and production |
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| Publication Number | Publication Date |
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| CN102856427A true CN102856427A (en) | 2013-01-02 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201210075633XA Pending CN102856427A (en) | 2012-03-21 | 2012-03-21 | Printed thin-film solar cell and production |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105118883A (en) * | 2015-07-29 | 2015-12-02 | 南京汉能薄膜太阳能有限公司 | Low-cadmium CIGS-based thin-film solar cell and manufacturing method thereof |
| WO2018152728A1 (en) * | 2017-02-23 | 2018-08-30 | 海门黄海创业园服务有限公司 | Cigs thin-film solar cell |
-
2012
- 2012-03-21 CN CN201210075633XA patent/CN102856427A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105118883A (en) * | 2015-07-29 | 2015-12-02 | 南京汉能薄膜太阳能有限公司 | Low-cadmium CIGS-based thin-film solar cell and manufacturing method thereof |
| CN105118883B (en) * | 2015-07-29 | 2017-04-26 | 南京汉能薄膜太阳能有限公司 | Low-cadmium CIGS-based thin-film solar cell and manufacturing method thereof |
| WO2018152728A1 (en) * | 2017-02-23 | 2018-08-30 | 海门黄海创业园服务有限公司 | Cigs thin-film solar cell |
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Application publication date: 20130102 |