WO2018151462A1 - Pomme d'arrosoir à gaz à canal d'écoulement de gaz à film de revêtement sans craquelure - Google Patents

Pomme d'arrosoir à gaz à canal d'écoulement de gaz à film de revêtement sans craquelure Download PDF

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WO2018151462A1
WO2018151462A1 PCT/KR2018/001701 KR2018001701W WO2018151462A1 WO 2018151462 A1 WO2018151462 A1 WO 2018151462A1 KR 2018001701 W KR2018001701 W KR 2018001701W WO 2018151462 A1 WO2018151462 A1 WO 2018151462A1
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Prior art keywords
gas
coating film
gas flow
flow path
shower head
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PCT/KR2018/001701
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English (en)
Korean (ko)
Inventor
김옥민
김옥률
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주식회사 펨빅스
김옥민
김옥률
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Publication of WO2018151462A1 publication Critical patent/WO2018151462A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment

Definitions

  • the present invention relates to a gas showerhead for use in an etching process or a deposition process.
  • Gas showerheads have been adopted and used as a standard in the semiconductor manufacturing industry for the uniform supply and distribution of process gases in etching or deposition processes during semiconductor processing.
  • the gas showerhead used in the etching process or the deposition process is corroded due to the process gas and plasma, and particles are generated due to the process gas and plasma. There is a need to form a coating film.
  • the surface exposed to the process gas and the plasma in the gas showerhead is the bottom surface formed with the outlet of the gas flow path.
  • the outlet of the gas flow path is formed hundreds to thousands at the bottom surface of the gas shower head, and the outlet of the gas flow path is very small in diameter (for example, 1 mm or less in diameter)
  • the gas in the process of forming the coating film Since the exit of the flow path may be blocked, a way to solve this was needed.
  • the conventional method for solving the above problems and the gas supply member formed thereby can be largely divided into the following four types.
  • Type 1 Method of forming a plasma spray coating film on the downstream side of the gas distribution shower head and then forming a gas flow path and a gas supply member formed by the method
  • This type 1 technique prepares a gas distribution plate 200 in which a set of holes 210 are formed from the back side to the exposed surface, as shown in FIG. 13, and as shown in FIG. 14. After the coating film 220 is formed on the exposed surface of the gas distribution plate 200, as shown in FIG. 15, two sets of holes 240 extending from the coating film 220 to one set of holes 220. ) Is formed.
  • the coating film is not directly formed in the through-hole of the gas shower head, the through-hole is not blocked, while the gas distribution distributes hundreds to thousands of holes 240 (the second set of holes) through the coating film 220.
  • the gas distribution distributes hundreds to thousands of holes 240 (the second set of holes) through the coating film 220.
  • Type 2 The gas flow outlet portion of the gas flow path is formed by the curved surface, and the exposed surface (the gas shower head lower surface) and the curved surface on which the gas flow outlet is formed are stressed by not forming a coating film in the gas flow path inner diameter. And a gas supply member formed by the method so that there is no concentrated portion
  • Predecessor 4 Gas Section Section Prasma Rizo's Oyster Trial Formation Method
  • the type 2 technique has a problem that cracks are generated due to stress concentration at the boundary point between the gas flow path and the gaseous outlet and the boundary point between the gaseous outlet and the bottom surface of the gas shower head.
  • FIG. 16 illustrates a problem of the crack 56 as described above.
  • the type 2 technology forms a gaseous exit portion as a curved surface as shown in FIG. 17 to eliminate edges where stress is concentrated, and to remove the coating portion protruding from the gas flow passage or to coat the inside of the gas flow passage. This prevents cracks from occurring.
  • the type 2 technology is that if a coating film protruding in the gas flow path is formed, cracks are generated in the corresponding portion, and the penetration of gas and plasma becomes a problem. do.
  • the coating film of the type 2 technology has a thickness of 50 ⁇ m to 100 ⁇ m or about 10 ⁇ m to 100 ⁇ m, such as CVD (Chemical Vapor Deposition), Aerosol Deposition, Cold Spray, Gas Deposition, Electrostatic It is described that it is formed by a method such as a fine particle impact coating method, an impact sintering method, but the above CVD method, aerosol deposition method, electrostatic fine particle impact coating method, impact sintering method without cracks and peeling in the gas flow path with the thickness of several tens of micrometers to several hundred micrometers It is difficult to form a coating film itself.
  • CVD Chemical Vapor Deposition
  • Aerosol Deposition Aerosol Deposition
  • Cold Spray Gas Deposition
  • Electrostatic Electrostatic
  • the coating film formed by the spray method, the cold spray method, the gas deposition method has a problem that there is always a crack, CVD method, aerosol deposition method, electrostatic fine particle impact coating method, impact sintering method dozens of ⁇ m or more thickness It is difficult to form a coating film without peeling.
  • Type 3 A gas supply member in which an anodizing treatment is performed on a gas supply member to remove a shower head and an alumina oxide film formed on the gas supply member, and a yttrium film is formed on the removed region.
  • Prior art 6 is an anodizing technique for a gas shower head which is a CVD process component.
  • the surface of the anodized shower head has a disadvantage in that cracks are generated to generate particles and arcing due to etching.
  • Prior art 8 forms an alumina film 52 by anodizing in a gas flow path as shown in FIGS. 18 and 19, and an yttria film 51 on the bottom of the gas outlet and the shower head. It is formed.
  • the alumina film 52 was formed on the gas flow passage and the lower surface of the shower head by the anodization treatment, the alumina film on the gas outlet and the lower surface of the gas shower head was removed and the yttria film 51 was formed. Since cracks occur in the alumina film formed by the anodizing treatment, an yttria film having a high resistance to process gas and plasma is formed on the lower surface of the showerhead and the gaseous exit portion where contact with the plasma is problematic along with the process gas.
  • Type 4 Gas supply member formed by spraying powder directly on the lower surface of gas distribution shower head and gas flow path to form a coating film
  • Prior art 9 shows that the coating films 291 and 296 formed on the shower head as shown in FIG. 20 are formed by a thermal spraying method such as plasma spraying, and the showerhead extends from the main body and the main body.
  • the coating films formed on the showerhead of the prior art 9 are formed by a thermal spray method. That is, the thermal spraying method inevitably exhibits cracks in the coating film due to the coating method characteristic of dissolving and spraying powder, thereby expressing the coating film effect of the gas shower head of the present invention formed without cracks on the lower surface and the gas flow path. There is a problem that cannot be done.
  • aerosol deposition (aerosol deposition) method is known since 1997 as a representative method that can directly spray the powder in addition to the thermal quarter method, this method is aerosolization (aerosol generator; After aerosolization, the aerosol is spray coated.
  • aerosol deposition method the powder is essentially supplied to the aerosolization process of the aerosol generating device, at this time, the gas shower head because of the characteristic of the method that the powder supplied to the transport pipe in the aerosol generating device irregularly and quantitatively supplied Hundreds to thousands of fine gas flow paths have a problem that the coating film is not formed on the exit or inner wall of the hole without being coated without cracking and peeling.
  • the present invention is to provide a gas shower head to prevent corrosion or particles generated by the process gas and plasma, and more particularly, there is no crack containing a yttrium element in the lower surface and the gas flow path exposed to the process gas and plasma
  • the purpose is to provide a gas shower head with a coating film formed thereon.
  • the present invention provides that the gas flow path is formed to the bottom surface, and a coating film containing a yttrium element is formed on the bottom surface and the gas flow path without cracking, and the coating film is gray color. It provides a gas shower head 'characterized in that.
  • the main body excluding the coating layer may be made of one metal material of aluminum, stainless steel, inconel, and nickel.
  • the coating film may be formed by injecting powder containing yttrium element into the flowing transport gas and spraying the lower surface and the gas flow path.
  • the powder containing the yttrium element may be formed by spraying at the incident angle ( ⁇ , 0 ° ⁇ ⁇ 90 °) formed with the lower surface, and the powder is Y 2 O 3 , Y 2 O 3 / 2OZr 2 , Y 2 O 3 Any one of / ZrO 2 / Nb 2 O 5 , ZrO 2 / 3Y 2 O 3 , Y 2 O 3 / ZrO 2 / HfO 2 , YAG, Al 2 O 3 / YAG, YF 3 , and YOF may be applied.
  • the coating film thickness of the lower surface may be formed in the range of 1 ⁇ m ⁇ 10 ⁇ m
  • the coating thickness of the gas flow path may be formed in the range of 0.1 ⁇ m ⁇ 10 ⁇ m.
  • the present invention has the following effects by providing a gas shower head in which a crack-free gray coating film containing yttrium element is formed on a lower surface and a gas flow path.
  • the part which can be coated with the same material was limited to the lower surface and gaseous outlet of the gas shower head, whereas the present invention can form a coating film free of cracks on the lower surface and gas flow path of the gas shower head. Because of this, arcing is suppressed in the etching process and the deposition process.
  • the coating film thickness of the gaseous outlet was formed in the range of several tens of micrometers to several hundreds of micrometers, and the coating film was removed by polishing the coating film in the bent portion where the gas flow path and the gaseous outlet were connected to prevent the gas flow passage from being blocked.
  • the gas shower head according to the present invention has a thickness of 1 ⁇ m to 10 ⁇ m in the lower surface of the gas shower head and a thickness of the gas channel in the range of 0.1 ⁇ m to 10 ⁇ m without cracking, thereby preventing the gas channel from clogging or peeling off the coating layer. It is effective.
  • the coating film is formed on the lower surface of the gas shower head and the gas flow path by powder injection while the gas flow path is open, hundreds to thousands of gas flow paths are formed by using a tool such as a photoresist or a stopper. After the coating and coating with), no additional process such as removing the tool such as the stopper is needed again, thereby improving productivity.
  • the coating film of the gas shower head according to the present invention is embodied in gray color, so that the reflectivity is better controlled than that of the white color coating film implemented by the conventional spraying method. Is uniformly distributed.
  • the gas shower head according to the present invention has a coating film without cracks formed on the lower surface and the gas flow path, so that the temperature uniformity is improved and the reaction product is less attached to the shower head after deposition. When applied to, the variation in deposition thickness is reduced compared to the prior art, thereby improving the uniformity of the thickness of the deposited film.
  • FIG. 1 is a schematic cross-sectional view of an example of a gas shower head used in an etching process or a deposition process.
  • FIG. 2 is an example of a cross section of a gas shower head in which a gas flow path is formed to have a constant diameter.
  • 3 is an example of a cross section of a gas shower head formed such that a gas passage gradually expands downward.
  • FIG. 4 is an example of a cross section of a gas shower head in which an outlet at a gas flow path end is stepped.
  • FIG. 5 is an example of a cross section of a gas shower head formed such that a gas flow passage is formed to have a constant diameter and gradually expands downward.
  • FIG. 6 is a photograph of the lower surface side of the gas shower head according to the present invention.
  • FIG. 7 is an enlarged photograph of the bottom surface of the gas shower head according to the present invention.
  • FIG 8 to 12 are views of the shower head gas according to the present invention according to the diameter Di of the gas channel, the diameter Do of the outlet of the gas channel, and the powder spray angle ⁇ (angle formed with the lower surface of the gas shower head). It is an example of the cross section which shows the maximum coating film formation depth Max (Lc) of a flow path.
  • FIGS. 13 to 15 correspond to FIGS. 2A, 2B and 2C of the prior art 1, respectively.
  • FIG. 16 and FIG. 17 correspond to FIGS. 5 and 8 of the prior art 4, respectively.
  • FIG. 18 and FIG. 19 correspond to FIGS. 5 and 6 of the prior art 8.
  • FIG. 18 and FIG. 19 correspond to FIGS. 5 and 6 of the prior art 8.
  • FIG. 20 corresponds to FIG. 2 of the prior art 9.
  • FIG. 20 corresponds to FIG. 20 of the prior art 9.
  • FIG. 21 is a cross-sectional electron microscope (SEM) image of a crack-free coating film formed on a lower surface and a gas flow path of a gas shower head according to an embodiment of the present invention.
  • the best mode for carrying out the present invention is that the gas flow path is formed to the lower surface, and the lower surface and the outlet of the gas flow path are formed hundreds to thousands, and the yttrium element is formed on the lower surface and the gas flow path.
  • the coating film is formed without cracks, and the coating film is gray color, and the main body except the coating film is made of one metal material of aluminum, stainless steel, inconel, and nickel. Gas shower head, wherein the coating film thickness d2 of the gas flow path is 0.1 ⁇ m to 10 ⁇ m.
  • the gas flow path is formed to the lower surface, and a coating film containing a yttrium element is formed on the lower surface and the gas flow path without cracking, and the coating film is gray color.
  • shower head is formed to the lower surface, and a coating film containing a yttrium element is formed on the lower surface and the gas flow path without cracking, and the coating film is gray color.
  • the present invention relates to a gas showerhead and is used in an etching process or a deposition process.
  • the gas shower head provided by the present invention includes a coating film 20 and a main body 10 except for the coating film 20, wherein the main body 10 is made of aluminum, stainless steel, inconel, and nickel. It can be composed of one metal material, the present invention can be applied irrespective of the shape of the shower head body.
  • FIG. 1 shows an example of a gas shower head body 10 configured to discharge the process gas supplied to the gas supply port 11 at the upper end through the gas flow passage 13 facing the lower surface 12.
  • the present invention may be applied regardless of the shape features of the main body 10 in addition to the example shown in FIG.
  • the present invention is characterized in that the coating film containing the yttrium element is formed on the lower surface 12 and the gas flow passage 13 without cracking, and the coating film is gray color.
  • the diameter and shape of (13), the outlet shape of the gas flow path and the like can be configured in various ways, the present invention can be applied irrespective of their shape.
  • the gas passage is formed to have a constant diameter (hereinafter, Example 1), and as shown in FIG. 3, the gas passage gradually expands downward (hereinafter, Example 2), the gas flow path is gradually reduced in the downward direction (hereinafter, Example 3), the outlet of the gas flow path end is formed stepped as shown in Figure 4 (hereinafter, Example 4), As shown in FIG. 5, the gas flow passage may be formed to have a constant diameter and then gradually expand in the downward direction (hereinafter, Example 5).
  • the gas showerhead according to the present invention includes all the same types as in the first to fifth embodiments.
  • the coating film of the present invention may be formed by spraying a powder containing yttrium element at an incident angle ( ⁇ , 0 ° ⁇ ⁇ 90 °) formed with the lower surface, and the powder is Y 2 O 3 , Y 2 O 3 / 2OZr 2 , Y 2 O 3 / ZrO 2 / Nb 2 O 5 , ZrO 2 / 3Y 2 O 3 , Y 2 O 3 / ZrO 2 / HfO 2 , YAG, Al 2 O 3 / YAG, YF 3 , YOF Applicable Powder of the above components is a coating material having a high resistance to the process gas (F (fluorine) gas or Cl (chlorine) gas) and plasma used in the etching process and the deposition process.
  • F fluorine
  • Cl chlorine
  • the coating film of the present invention can be formed by injecting a powder containing yttrium element into the flowing transport gas to be injected into the lower surface and the gas flow path of the gas shower head.
  • the powder is introduced into the air stream of the transport gas in the state where the air flow of the transport gas is first formed through the transport pipe so as to be sprayed on the lower surface and the inner wall of the gas flow path.
  • the aerosol deposition method is previously aerosolized by dispersing the powder in a gas through an aerosol generator (aerosol generator) and then supplying the aerosol to the transport pipe.
  • aerosol generator aerosol generator
  • the method of forming a coating film according to the present invention in view of whether or not a coating film can be formed on the inner wall of the gas shower head without cracking and peeling with a very small diameter (for example, 1 mm or less in diameter) of the gas shower head. There is a significant difference between this method and the aerosol deposition method.
  • the aerosol-generating device which is an essential component, in that the aerosolized powder is irregularly and quantitatively supplied to the transport pipe. Is stacked without coating.
  • FIG. 21 illustrates a cross-sectional electron microscope (SEM) image of a crack-free coating film formed on a lower surface of a gas shower head and a gas flow path as an example of the present invention. It is well known in the art that the coating film is not formed on the inner wall of the gas shower head gas flow path as shown in FIG. 21 as the aerosol deposition method.
  • SEM cross-sectional electron microscope
  • the present invention unlike the conventional thermal spray (thermal spray) method and aerosol deposition (aerosol deposition) method and the like to implement a coating film of the gas shower head lower surface and the gas flow path of the present invention as described above Patent No. 1094725 "Yttrium oxide coating film And yttrium coating method ", Patent No. 1568287” Solid powder coating apparatus and coating method ", Patent No. 1447890” Solid powder coating apparatus and coating method ", Patent No. 0916944” Solid powder continuous deposition apparatus and solid powder continuous deposition method "And the like, and patent 1065271” solid powder coating apparatus “and the like can be used.
  • the coating film may be formed to express the characteristics of the patent "1500 structure".
  • the coating film thickness d1 of the lower surface may be formed in a range of 1 ⁇ m to 10 ⁇ m
  • the coating film thickness d2 of the gas flow path may be formed in a range of 0.1 ⁇ m to 10 ⁇ m. Due to the coating film thickness, the phenomenon that the gas flow path is not blocked in the coating process does not occur, and cracks and detachment do not occur even in the formed coating film.
  • the color of the coating layer is shown in gray color.
  • low gloss 10GU (less than 85 °)
  • semi gloss 10-70GU (60 °)
  • high gloss High
  • Gloss Adjust the gloss by polishing the surface of the gas showerhead body 10 and the surface of the coating film 20 so as to exhibit a gloss of one of 70GU or more (20 °). Can be.
  • the reflectivity is lower than that of the gas supply member in which the gray coating film according to the present invention is formed.
  • the process substrate temperature tends to drift as the reflectivity of the gas showerhead changes, and the change in reflectivity of the gas showerhead affects the temperature of the process region and the temperature of the substrate, which is formed on the substrate. Affects membrane and membrane properties.
  • the temperature may be uniformly distributed over the entire area of the substrate in the etching process or the deposition process.
  • the present invention is characterized in that the coating film is formed on the lower surface of the gas shower head as well as the gas flow path.
  • the incident angle ⁇ of the powder is the spray angle of the powder formed on the lower surface of the gas shower head, and the maximum coating film formation depth Max (Lc) in the gas passage is determined according to the incident angle and the diameter and shape of the gas passage. (See FIG. 8 to FIG. 12).
  • the coating film formation depth Lc of the gas flow path is expressed as a function of the powder injection angle ⁇ , the diameter of the gas flow path Di, and the outlet diameter Do of the gas flow path, which form the lower surface of the gas head.
  • FIG. 10 shows the third embodiment, wherein the maximum value ((Max (Lc)) of the formation depth of the coating film formed in the gas flow path is Appears.
  • a process of blocking the gas flow path by inserting a tool such as a photoresist or plug into the gas flow path is unnecessary.
  • a powder containing yttrium element is directly injected at an incident angle ( ⁇ , 0 ° ⁇ ⁇ 90 °) formed with the lower surface of the gas shower head to open the lower surface and the gas without clogging the gas channel. It is to form a coating film without cracks in the flow path.
  • uncoated residual powder may remain in the gas flow path, and the residual powder may become impurity particles in a deposition process or an etching process, and thus a work for removing them is necessary.
  • a pumping method of injecting a liquid into a gas flow path and discharging the residual powder to the outside may be applied.
  • the temperature uniformity is improved and the reaction product is less attached to the shower head after deposition.
  • the variation in deposition thickness is reduced compared to the prior art, thereby improving the uniformity of the thickness of the deposited film.
  • the present invention can be applied to a gas showerhead for uniform supply and distribution of process gases in an etching process or a deposition process during a semiconductor process.

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Abstract

La présente invention concerne une pomme d'arrosoir à gaz utilisée pour un traitement de gravure ou un traitement de dépôt. L'invention concerne une pomme d'arrosoir à gaz comportant un canal d'écoulement de gaz formé vers le bas jusqu'à une surface inférieure, dans laquelle un film de revêtement contenant un élément d'yttrium est formé sans craquelure sur la surface inférieure et sur le canal d'écoulement de gaz.
PCT/KR2018/001701 2017-02-15 2018-02-08 Pomme d'arrosoir à gaz à canal d'écoulement de gaz à film de revêtement sans craquelure WO2018151462A1 (fr)

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KR10-2017-0020450 2017-02-15
KR1020170020450A KR20170024592A (ko) 2017-02-15 2017-02-15 가스유로에 균열이 없는 코팅막이 형성되어 있는 가스 샤워헤드

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