TWI678730B - 在氣體流路形成沒有龜裂的塗敷膜的氣體噴頭 - Google Patents
在氣體流路形成沒有龜裂的塗敷膜的氣體噴頭 Download PDFInfo
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- 238000000576 coating method Methods 0.000 title claims abstract description 98
- 239000011248 coating agent Substances 0.000 title claims abstract description 91
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 10
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 239000007921 spray Substances 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 229910001026 inconel Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 50
- 238000005530 etching Methods 0.000 abstract description 15
- 238000005019 vapor deposition process Methods 0.000 abstract description 4
- 239000000843 powder Substances 0.000 description 19
- 238000007740 vapor deposition Methods 0.000 description 13
- 238000009826 distribution Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- 238000005507 spraying Methods 0.000 description 7
- 238000007743 anodising Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000007790 solid phase Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000000443 aerosol Substances 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229940098458 powder spray Drugs 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000010288 cold spraying Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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Abstract
本發明涉及用於蝕刻工序或蒸鍍工序的氣體噴頭。本發明提供氣體噴頭,其特徵在於,氣體流路形成至下部面,包含釔元素的相同成分的塗敷膜以沒有龜裂的方式形成於上述下部面及氣體流路。
Description
本發明涉及用於蝕刻(etching)工序或蒸鍍(deposition)工序的氣體噴頭(gas showerhead)。
半導體工序中,蝕刻工序或蒸鍍工序中,為了工序氣體的均勻供給及分配,氣體噴頭為在半導體製造產業中的標準。
只是,上述蝕刻工序或蒸鍍工序中使用的氣體噴頭因工序氣體及等離子被腐蝕(corrosion),並同時發生離子,為了抑制這種現象,需要在氣體噴頭的工序氣體及等離子露出面形成塗敷膜。
在氣體噴頭中,向工序氣體及等離子露出的面為氣體流路的出口形成的下端面。但是,上述氣體流路的出口在氣體噴頭的下端面形成數百至數千個,上述氣體流路的出口的直徑過小(例如,直徑為1mm以下),因此,在塗敷膜形成過程中,上述氣體流路的出口有可能被堵塞,因此,需要解決這種問題的方法。
用於解決上述問題的以往方法及以此形成的氣體供給部件大體分為以下3種類型。
1、類型1:在氣體分配噴頭下流側面形成等離子噴射塗敷膜之後,穿過氣體流路來形成的方法及通過上述方法形成的氣體供給部件。
(1)相關現有技術文獻
韓國專利申請號KR 10-2012-7019028“具有用於半導體處理的塗敷物質的氣體分配噴頭”
PCT國際申請號PCT/US2001/022418、美國專利申請號US 2011/0198034“Gas Distribution Showerhead With Coating Material For Semiconductor Processing”
(2)內容及分析
參照前述韓國專利申請號KR 10-2012-7019028說明書中的圖2a顯示,本類型1技術中,準備從背面至露出面形成第一組孔(210)的氣體分配板(200);圖2b顯示,在上述氣體分配板(200)的露出面形成塗敷膜(220)之後;圖2c顯示,在上述塗敷膜(220)中形成與第一組孔(220)相連接的第二組孔(240)。
只是,根據這種類型1技術,無法在氣體分配板(200)的氣體流路內壁形成塗敷膜,因此,無法防止工序氣體及等離子所引起的氣體流路的腐蝕。
並且,並非直接在氣體噴頭的貫通孔形成塗敷膜,因此,貫通孔不會堵塞,相反,貫通上述塗敷膜(220)的數百至數千個孔(240)(第二組的孔)很難與預先在上述氣體分配板(200)形成的孔(210)(第一組的孔)相連通的方式貫通,從而生產性降低。
同時,根據前述韓國申請專利KR 10-2012-7019028的[0013]段落之文獻記載,上述塗敷膜(220)通過等離子噴射形成,因此,在塗敷膜一直存在龜裂。
2、類型2:氣體流路的氣體排出口部分呈彎曲面,塗敷形成上述氣體排出口的露出面(氣體噴頭下部面)和上述彎曲面,在氣體流路內徑不會形成塗敷膜,由此,沒有應力集中的部分的方法及通過上述方法形成的氣體供給部件。
(1)相關現有技術文獻
美國專利號US 9236229”as Supply Member,Plasma Treatment Method,and Method of Forming Yttria-Containing Film”
日本專利號JP 5389282“氣體供給部件等離子體裝置及含有氧化釔的膜的形成方法”
日本專利號JP 5198611“氣體供給部等離子體裝置及含有氧化釔的膜的形成方法”
(2)內容及分析
以下,參照前述日本專利號JP 5389282及JP 5198611說明書中的圖5所示,通常,上述類型2技術為以往的氣體供給部件,類型2技術中,氣體流路和氣體排出口的邊界位置和上述氣體排出口和氣體噴頭下部件的邊界位置集中應力,從而導致裂痕(56)的發生。
類型2技術為了解決上述裂痕問題,請參照前述日本專利號JP 5389282及JP 5198611說明書中的圖8所示,氣體排出口部分呈彎曲面,去除應力集中的邊緣(參照說明書中圖8的附圖標記(44)部分),去除在氣體流路內部突出的塗敷部分或者隔斷氣體流路的內部的塗敷(參照說明書中圖8的附圖標記(43)部分),不會發生裂痕。
但是,很難使在數百至數千個的氣體排出口呈彎曲面,同樣,很難一一去除在數百至數千個的氣體流路內部突出的塗敷部分或者一一隔斷氣體流路內部的塗敷。
並且,類型2技術中,若在氣體流路內形成突出的塗敷膜,則在對應部分發生裂痕,氣體及等離子的滲透成為問題,即便如此,若未在氣體流路形成塗敷膜,則無法防止氣體流路的腐蝕。
同時,類型2技術的塗敷膜通過化學氣相沉積(CVD,Chemical Vapor Deposition)法、氣溶膠沉積(Aerosol Deposition)法、冷噴塗法、氣相沉積法、靜電粒子衝擊塗敷法、衝擊燒結法等的方法形成50-100μm或10-100μm的厚度,但是,上述化學氣相沉積法、氣溶膠沉積法、靜電微粒衝擊塗層法、衝擊燒結法,上述數十μm至數百μm厚度,沒有龜裂及脫離地形成塗敷膜。具體地,上述噴霧法、冷噴霧法、氣體沉積法形成的塗敷膜一直存在龜裂問題,通過化學氣相沉積、氣溶膠沉積、靜電微粒衝擊塗層法、衝擊燒結法,很難沒有剝離地形成數十μm以上厚度的塗敷膜。
3、類型3:不在氣體部件通過噴射等的方法進行塗敷,而是進行陽極氧化(anodizing),在氣體供給部件形成氧化鋁膜的噴頭及去除氧化鋁膜的區域形成氧化釔膜的氣體供給部件。
(1)相關現有技術文獻
韓國專利申請號KR 10-2011-7029814“陽極氧化被處理的噴頭”
PCT國際申請號PCT/US2010/034806;美國專利申請號US 2010/0288197“Anodized Showerhead”
美國專利申請號US 2014/0231251(“Gas Supply Member,Plasma Processing Apparatus and Method of Fabricating Gas Supply Member”;JP 2014-157944)
韓國專利申請號KR 10-2011-7029814為在作為化學氣相沉積工序部件的氣體噴頭進行陽極氧化處理的技術。只是,在陽極氧化處理的噴頭表面發生龜裂,會發生因蝕刻引起的粒子生成及飛弧發生。
(2)內容及分析
參照前述美國專利申請號US 2014/0231251說明書中的圖5及圖2所示,其中,在氣體流路形成通過陽極氧化處理形成的鋁膜(52),在氣體排出口和噴頭的下部面形成氧化釔膜(51)。通過陽極氧化處理,在上述氣體流路、氣體排出口及噴頭下部面形成鋁膜(52)之後,去除上述氣體排出口和氣體噴頭下部面的鋁膜,並形成氧化釔膜(51)。在通過陽極氧化處理形成的鋁膜發生龜裂,因此,在與工序氣體一同與等離子接觸的噴頭下部面和氣體排出口部分形成對於工序氣體及等離子的阻抗性大的氧化釔膜。
但是,對氣體供給部件整體進行陽極氧化處理之後,在一部分(氣體排出口及氣體噴頭下部面)去除陽極氧化的鋁膜,在上述去除的區域再次塗敷氧化釔膜需要雙重時間,因此,生產性降低。並且,很難一一去除數百至數千個的微細氣體排出口的鋁膜。
現有技術文獻
專利文獻
(專利文獻0001)1.韓國專利申請號KR 10-2012-7019028“具有用於半導體處理的塗敷物質的氣體分配噴頭”(PCT/US2001/022418,US 2011/0198034)
(專利文獻0002)2、美國專利號US 9236229“Gas Supply Member,Plasma Treatment Method,and Method of Forming Yttria-Containing Film”(JP 5389282;JP 5198611)
(專利文獻0003)3、韓國專利申請號KR 10-2011-7029814“陽極氧化被處理的噴頭”;PCT/US2010/034806;US 2010/0288197“Anodized Showerhead”
(專利文獻0004)4、美國專利申請號US 2014/0231251 A1“Gas Supply Member,Plasma Processing Apparatus and Method of Fabricating Gas Supply Member”(JP 2014-157944)
本發明提供防止工序氣體及等離子的腐蝕或粒子發生的氣體噴頭,更詳細地,提供在向工序氣體及等離子露出的氣體噴頭下部面及氣體流路形成包含釔元素且沒有龜裂的塗敷膜的氣體噴頭。
為了上述問題,本發明提供氣體噴頭,其特徵在於,氣體流路形成至下部面,包含釔元素的相同成分的塗敷膜以沒有龜裂的方式形成於上述下部面及氣體流路。
上述氣體噴頭中,除上述塗敷膜之外的本體可由鋁、不銹鋼、鉻鎳鐵合金(inconel)、鎳(nickel)中的一種金屬材料形成。
上述塗敷膜可向與上述下部面形成的入射角度(θ,0°<θ<90°)噴射包含釔元素的粉末,上述粉末可以為Y2O3、Y2O3/2OZr2、Y2O3/ZrO2/Nb2O5、ZrO2/3Y2O3、Y2O3/ZrO2/HfO2、YAG、Al2O3/YAG、YF3、YOF中的一種。並且,上述下部面的塗敷膜厚度處於1μm-10μm範圍,上述氣體流路的塗敷膜厚度處於0.1μm-10μm範圍。
本發明提供下部面積氣體流路,包含釔元素的灰色塗敷膜沒有龜裂地形成的氣體噴頭,由此,具有如下效果。
1.以往,可通過相同物質進行塗敷的部分局限於氣體噴頭的下部面及氣體排出口,相反,本發明可在氣體噴頭的下部面積氣體流路以相同物質形成沒有龜裂的塗敷膜,因此,蝕刻工序及蒸鍍工序中抑制飛弧(arcing)的發生。
2.以往,氣體排出口的塗敷膜厚度除數十μm至數百μm範圍,通過在氣體流路和氣體排出口連接的彎曲部形成塗敷膜等的方法來去除塗敷膜並防止氣體流路的堵塞,相反,本發明的氣體噴頭中,在下部面的塗敷膜厚度處於1μm-10μm、氣體流路的塗敷膜厚度處於0.1μm-10μm範圍中沒有龜裂地形成,由此,防止上述氣體流路被堵塞或者剝離現象。
3.本發明具有如下效果,在氣體流路開放的狀態下,通過粉末噴射,在氣體噴頭的下部面(下面)及氣體流路形成塗敷膜,通過光刻膠、蓋等的框架(tool)堵塞數百至數千個的氣體流路並進行塗敷之後,無需再次去除上述蓋等的框架等的附加工序,因此,提高生產性。
4.本發明的氣體噴頭的塗敷膜呈灰色(grey color),與通過以往的噴霧方法體現的白色的塗敷膜相比,反射度提高,由此,基板整體面積中,溫度會均勻地分佈。
5.本發明的氣體噴頭中,在下部面及氣體流路形成沒有龜裂的塗敷膜,溫度均勻度提高,在蒸鍍之後,反應生成物很少附著於噴頭,因此,若在蒸鍍工序適用本發明的氣體噴頭,則與以往相比,蒸鍍厚度的偏差減少,蒸鍍膜厚度的均勻度進一步提高。
6.若在蝕刻工序適用本發明的氣體噴頭,則與以往相比,因蝕刻而引起的副產物(by-product)及粒子附著量進一步減少。
10‧‧‧氣體噴頭本體
11‧‧‧氣體噴頭的氣體供給口
12‧‧‧氣體噴頭的下部面
13‧‧‧氣體噴頭的氣體流路
14‧‧‧氣體噴頭的氣體流路出口
20‧‧‧塗敷膜
20a‧‧‧氣體噴頭下部面的塗敷膜
20b‧‧‧氣體流路的塗敷膜
d1‧‧‧氣體噴頭下部面的塗敷膜厚度
d2‧‧‧氣體流路的塗敷膜厚度
Di‧‧‧氣體流路的直徑
Do‧‧‧氣體流路的出口直徑
Max(Lc)‧‧‧氣體流路的最大塗敷膜形成深度
θ‧‧‧粉末噴射角度(degree;與氣體噴頭下部面形成的角度)
圖1為用於蝕刻工序或蒸鍍工序的氣體噴頭一例的剖面示意圖。
圖2為氣體流路具有規定直徑的氣體噴頭剖面的一例。
圖3為氣體流路向下逐漸擴孔的氣體噴頭剖面的一例。
圖4為氣體流路末端的出口形成高度差的氣體噴頭剖面的一例。
圖5為氣體流路具有規定直徑並向下方逐漸擴孔的氣體噴頭剖面的一例。
圖6為本發明的氣體噴頭下面側的照片。
圖7為本發明的氣體噴頭下面側的放大照片。
圖8至圖12為示出氣體流路的直徑Di和氣體流路出口的直徑Do變化、粉末噴射角度(與氣體噴頭下部面形成的角度)的本發明的噴頭氣體流路的最大塗敷膜形成深度Max(Lc)的剖面示意圖的例。
本發明提供氣體噴頭,其特徵在於,氣體流路形成至下部面,在上述下部面積氣體流路,包含釔元素的相同成分的塗敷膜沒有龜裂地形成。
以下,參照附圖,詳細說明本發明。
本發明涉及氣體噴頭,使用蝕刻工序或蒸鍍工序。本發明所提供的氣體噴頭由塗敷膜20和除上述塗敷膜20之外的本體10構成,上述本體10可
由鋁、不銹鋼、鉻鎳鐵合金、鎳中的一種金屬材料形成,本發明與上述噴頭本體的形態無關地形成。
圖1中示出向上端的氣體供給口11供給的供給氣體通過朝向下部面12的氣體流路13排出的氣體噴頭本體10的例。只是,本發明除圖1所示的例之外,與上述本體10的形態特徵無關地均可適用。
本發明的特徵在於在上述下部面12及氣體流路13,包含釔元素的相同成分的塗敷膜沒有龜裂地形成,並且,上述塗敷膜為灰色,上述氣體流路13的直徑和形態、氣體流路的出口形態等可以以多種方式構成,本發明與這些形態無關地適用。
如圖2所示,本發明均可適用于氣體流路具有規定直徑(以下,實施例1),如圖3所示,氣體流路向下逐漸擴孔(以下,實施例2)、氣體流路向下逐漸收縮(以下,實施例3)、如圖4所示,氣體流路的末端的出口具有高度差(以下,實施例4)、如圖5所示,氣體流路具有規定直徑並向下逐漸擴孔(以下,實施例5)等。
即,本發明的氣體噴頭包括與上述實施例1至實施例5相同的類型。
本發明的塗敷膜向與上述下部面形成的入射角度(θ,0°<θ<90°)噴射包含釔元素的粉末來形成,上述粉末可以為Y2O3、Y2O3/2OZr2、Y2O3/ZrO2/Nb2O5、ZrO2/3Y2O3、Y2O3/ZrO2/HfO2、YAG,Al2O3/YAG、YF3、YOF中的一種。上述成分的粉末為在蝕刻工序及蒸鍍工序中使用的工序氣體[F(氟)類的氣體或Cl(氯)類的氣體]及對等離子阻抗性高的塗敷物質。
上述粉末的噴射方法可利用韓國專利授權第1094725號“氧化釔塗敷膜及氧化釔塗敷方法”、韓國專利授權第1568287號“固相粉末塗敷裝置及塗敷方法”、韓國專利授權第1447890號“固相粉末塗敷裝置及塗敷方法”、韓國專利授權第0916944“固相粉末連續蒸鍍裝置及固相粉末連續蒸鍍方法”等,尤其,可使用韓國專利授權第1065271號“固相粉末塗敷裝置”等。
並且,上述塗敷膜體現出韓國專利授權第1500517號“氧化釔結構物”的特性。
在本發明中,上述下部面的塗敷膜厚度d1可處於1μm-10μm範圍,上述氣體流路的塗敷膜厚度d2處於0.1μm-10μm範圍。通過這種塗敷膜厚度,在塗敷過程中,不會發生上述氣體流路堵塞的現象,在形成的塗敷膜也不會發生龜裂和脫離。
如圖6及圖7的照片所示,上述塗敷膜的顏色可以為灰色。
根據由鋁、不銹鋼、鉻鎳鐵合金、鎳中的一個金屬材料構成的氣體噴頭本體10的表面亮度(surface roughness)及形成於上述本體10的塗敷膜20的表面亮度,體現為深灰色(dark grey)或淺灰色(light grey)的灰色。
並且,根據上述本體10的表面亮度和上述塗敷膜20的表面亮度,以能夠選擇低光澤(Low Gloss:10GU(小於85°)、中間光澤(Semi Gloss:10-70GU(60°))、高光澤(High Gloss:70GU以上(20°))中的一種光澤的方式通過拋光(polishing)等的方法調節氣體噴頭本體10的表面及上述塗敷膜20的表面狀態。
相反,在以往的氣體噴頭通過噴射(等離子噴射)方法形成的塗敷膜的顏色為白色(white),與本發明的形成灰色的塗敷膜的氣體供給部件相比,反射度低。
工序基板溫度隨著氣體噴頭的反射度的變化,存在偏向(drift)的傾向,上述氣體噴頭的反射度變化對工序區域的溫度及基板的溫度產生影響,這對形成於基本的膜及膜特性產生影響。
由此,調節氣體噴頭下部面(形成塗敷膜的下部面)的反射度,由此,在蝕刻工序或蒸鍍工序中的基板整體面積,溫度均勻地分佈。
本發明的特徵在於,塗敷膜形成於氣體噴頭的下部面至氣體流路。上述粉末的入射角度θ為與上述氣體噴頭的下部面形成的噴射角度,根據上述入射角度和上述氣體流路的直徑及形態,確定在上述氣體流路內的最大塗敷膜形成深度Max(Lc)(參照圖8至圖12)。
上述氣體流路的塗敷膜形成深度Lc通過與上述氣體噴頭的下部面形成的粉末噴射角度θ、氣體流路的直徑Di、氣體流路的出口直徑Do的函數表現,形成於上述氣體流路的塗敷膜的形成深度的最大值Max(Lc)可體現為
Do[tanθ]、Di[tanθ]、、
中的一個值。
圖8示出上述實施例1,氣體流路的直徑Di、氣體流路的出口直徑Do相同,形成于氣體流路的塗敷膜的形成深度的最大值Max(Lc)為Do[tanθ]或Di[tanθ]。
當形成上述塗敷膜時,向氣體流路插入光刻膠或者蓋等的框架,從而無需堵塞上述氣體流路的過程等。在氣體噴頭下部面的氣體流路開放的狀態下,直接向與上述下部面形成的入射角度(θ,0°<θ<90°)噴射包含釔元素的粉末,沒有上述氣體流路的堵塞,從而在上述下部面及氣體流路形成沒有龜裂的塗敷膜。
只是,可殘留未在上述氣體流路塗敷的殘留粉末,這種殘留粉末在蒸鍍工序或蝕刻工序中變為不純物粉末,因此,需要去除這些的作業。
上述殘留粉末去除作業可適用向氣體流路注入液體來向外部排出上述殘留粉末的泵(pumping)方法。
本發明所提供的氣體噴頭中,在下部面及氣體流路形成沒有龜裂的塗敷膜,溫度均勻度提高,在蒸鍍之後,反應生成物很少附著在噴頭,若在蒸
鍍工序適用本發明的氣體噴頭,則與以往相比,蒸鍍厚度的偏差減少,蒸鍍膜厚度的均勻度進一步提高。
並且,以往,很難在氣體噴頭的氣體流路形成沒有龜裂的塗敷膜,通過陽極氧化處理,在上述氣體流路形成膜,上述鋁膜也存在龜裂,因此,存在飛弧及粒子生成問題。形成于本發明的氣體噴頭的塗敷膜中,直至上述氣體流路的塗敷膜形成深度(Lc)沒有龜裂,因此,在用於蝕刻工序的情況下,因蝕刻引起的副產物及顆粒附著量減少,並不會發生飛弧。
本發明與附圖相關地進行了說明,但是,在不超出本發明的主旨的範圍內,可進行多少修改及變形,可適用於多種領域。因此,本發明的發明要求保護範圍包括本發明的真正範圍內的修改及變形。
Claims (6)
- 一種氣體噴頭,其特徵在於, 氣體流路形成至下部面, 包含釔元素的相同成分的塗敷膜以沒有龜裂的方式形成於所述下部面及氣體流路。
- 如請求項1之氣體噴頭,其特徵在於,所述塗敷膜為灰色。
- 如請求項1之氣體噴頭,其特徵在於,除所述塗敷膜之外的本體由鋁、不銹鋼、鉻鎳鐵合金及鎳中的一種金屬材料形成。
- 如請求項1之氣體噴頭,其特徵在於,所述下部面的塗敷膜的厚度d1為1μm~10μm。
- 如請求項1之氣體噴頭,其特徵在於,所述氣體流路的塗敷膜的厚度d2為0.1μm~10μm。
- 如請求項1之氣體噴頭,其特徵在於,形成於所述氣體流路的塗敷膜的形成深度的最大值Max(Lc)為、、、中的一種。
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