WO2018138961A1 - Ceramic circuit substrate, power module, and light emission device - Google Patents

Ceramic circuit substrate, power module, and light emission device Download PDF

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Publication number
WO2018138961A1
WO2018138961A1 PCT/JP2017/033853 JP2017033853W WO2018138961A1 WO 2018138961 A1 WO2018138961 A1 WO 2018138961A1 JP 2017033853 W JP2017033853 W JP 2017033853W WO 2018138961 A1 WO2018138961 A1 WO 2018138961A1
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Prior art keywords
ceramic circuit
circuit board
conductor layer
metal film
ceramic
Prior art date
Application number
PCT/JP2017/033853
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French (fr)
Japanese (ja)
Inventor
輝行 本多
細井　義博
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京セラ株式会社
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Publication of WO2018138961A1 publication Critical patent/WO2018138961A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0239—Combinations of electrical or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

Definitions

  • the present invention relates to a ceramic circuit board, a power module, and a light emitting device.
  • a ceramic circuit board for example, Cu (copper) may be used as a conductor material such as signal wiring for the purpose of keeping electric resistance low (see, for example, Patent Document 1).
  • the semiconductor element mounted on the surface of the ceramic circuit board is sealed with a resin material for protection (see, for example, Patent Document 2).
  • a ceramic circuit board includes a ceramic substrate, a conductive layer made of Cu disposed on a surface of the ceramic substrate, and a mounting region on which the semiconductor element is mounted, and at least the mounting region of the conductive layer.
  • the metal film is made of a material mainly composed of one or more selected from the group consisting of Ir, Rh, Pd, Pt, Al, Ti, W, Ta, and Nb.
  • a power module includes the above-described ceramic circuit board, a power element that is a semiconductor element mounted in the mounting region, a casing in which the ceramic circuit board and the power element are stored, and the casing A sealing resin that is filled and seals the power element.
  • a light-emitting device of the present disclosure includes the above-described ceramic circuit board, a light-emitting element that is a semiconductor element mounted in the mounting region, and a sealing resin that seals the light-emitting element.
  • the ceramic circuit board 1 includes a ceramic substrate 2, a conductor layer 3 made of Cu, and a metal film 4 that covers the conductor layer 3.
  • the ceramic substrate 2 is a substrate for mounting a semiconductor element made of a ceramic sintered body and having a relatively large amount of heat generation such as a power element or a light emitting element.
  • the ceramic substrate 2 has characteristics such as high mechanical strength and high heat transfer characteristics (cooling characteristics).
  • a known material can be used as the ceramic sintered body.
  • an alumina (Al 2 O 3 ) sintered body, an aluminum nitride (AlN) sintered body, a silicon nitride (Si 3 N 4 ) sintered body, or the like can be used.
  • the ceramic substrate 2 can be manufactured by a known manufacturing method.
  • a known production method can be produced, for example, by adding a sintering aid to a raw material powder such as alumina, forming it into a substrate, and then firing it.
  • the conductor layer 3 of the present embodiment is made of Cu (copper) and is disposed on at least one surface of the ceramic substrate 2 in a pattern shape such as a wiring shape.
  • the conductor layer 3 is electrically connected to a semiconductor element to be mounted by a connecting member such as a bonding wire. Furthermore, the conductor layer 3 is electrically connected to an external electric circuit or the like, and transmits electric power and control signals between the semiconductor element and the external electric circuit.
  • the conductor layer 3 Since the semiconductor element and the conductor layer 3 are electrically connected, at least a part of the conductor layer 3 is disposed on the same surface as the semiconductor element mounting surface of the ceramic substrate 2. If it does so, sealing resin which protects a semiconductor element will cover a part of conductor layer 3 which consists of Cu with a semiconductor element.
  • an oxide film (copper oxide film) grows on the surface of the conductor layer 3 to increase the film thickness, and the oxide film is easily broken. In the portion where the sealing resin covers the conductor layer 3, the bonding strength may be reduced due to breakdown in the film.
  • the conductor layer 3 can be formed by printing and applying a paste containing Cu powder and a binder resin, and simultaneously firing with the ceramic substrate 2 to form a metallized layer.
  • the conductor layer 3 can be formed by bonding a Cu foil (Cu plate) on the ceramic substrate 2 or forming a Cu plating film on the ceramic substrate 2.
  • the paste When the paste is printed and applied, it may be printed and applied in a pattern shape to be formed in advance.
  • a pattern may be formed by etching or the like after bonding to the entire surface.
  • an underlayer may be formed by a thin film or a metallized layer and formed by electrolytic plating or by electroless plating using a mask.
  • the conductor layer 3 is provided with a mounting region 3a for mounting the semiconductor element 6 via, for example, a bonding material 5 containing Ag.
  • the metal coating 4 covers a portion other than the mounting region 3 a among the exposed portions of the conductor layer 3.
  • the portion other than the mounting region 3a of the conductor layer 3 is a portion where the sealing resin is directly contacted and joined to the conductor layer 3, and is a portion where a copper oxide film is formed.
  • this portion is covered with a metal film 4 made of a material mainly containing a specific metal species.
  • the metal film 4 only needs to cover at least a portion other than the mounting area 3a. Even if the metal film 4 is configured not to cover the mounting area 3a as in the present embodiment, the mounting area 3a as in the second embodiment described later. Also, it may be configured to cover.
  • the metal film 4 is made of a material mainly composed of one or more selected from the group consisting of Ir, Rh, Pd, Pt, Al, Ti, W, Ta and Nb.
  • the metal film 4 may be made of a material mainly composed of one or more selected from the group consisting of Ir, Rh, Pd and Pt.
  • the metal film 4 may be made of a material mainly composed of Pd.
  • the main component is a material occupying 90% by mass or more in the material constituting the metal film 4.
  • the material constituting the metal film 4 may contain, for example, P (phosphorus), B (boron), etc. in addition to the main component.
  • the metal film 4 is a kind whose main component is selected from the group consisting of Ir, Rh, Pd, Pt, Al, Ti, W, Ta, and Nb, so that it becomes a high temperature state due to heat generation of the mounted semiconductor element 6.
  • a passive film which is an oxide film having a relatively small thickness is formed on the surface of the metal film 4, and the film hardly grows (thickness does not increase). Furthermore, this thin passive film is firmly bonded by hydrogen bonding with the sealing resin.
  • the conductor layer 3 made of Cu is covered with the metal film 4, the copper oxide film which causes the reduction of the bonding strength is not formed on the surface because the Cu is not oxidized even at a high temperature state. Therefore, in the ceramic circuit board 1 of this embodiment, even when the semiconductor element 6 is mounted and resin-sealed, the bonding strength between the ceramic circuit board 1 and the sealing resin can be improved.
  • Ceramic circuit boards differing only in the presence or absence of the metal film 4 were prepared and sealed with resin, and then the tensile strength of the sealing resin was measured by a tensile test.
  • the ceramic circuit board 1 of the present embodiment provided with the metal film 4 exhibited a tensile strength approximately twice that of the ceramic circuit board not provided with the metal film 4.
  • the metal film 4 may be formed by any method as long as it can cover a portion other than the mounting region 3 a of the conductor layer 3.
  • a film may be formed on the conductor layer 3 by a thin film forming method such as sputtering or vapor deposition, or a plating method such as electroless plating or electrolytic plating.
  • the metal film 4 is a material mainly composed of one or more selected from the group consisting of Ir, Rh, Pd and Pt among Ir, Rh, Pd, Pt, Al, Ti, W, Ta and Nb. When it consists of, it is easy to form by the plating method which is low-cost and excellent in mass productivity compared with vapor deposition etc.
  • the metal film 4 may directly cover the conductor layer 3 made of Cu, and a base layer made of Ni or the like may be provided between the metal film 4 and the conductor layer 3.
  • the ceramic substrate 2, the conductor layer 3, and the metal coating 4 have shapes, thicknesses, widths, and the like according to required characteristics depending on the type of semiconductor element to be mounted, the type of device in which the ceramic circuit board 1 is incorporated, and the like.
  • the dimensions may be set as appropriate.
  • the ceramic substrate 2 has a rectangular plate shape, and may have a length of 2 to 60 mm, a width of 2 to 60 mm, and a thickness of 0.2 to 1.0 mm.
  • the conductor layer 3 has a predetermined pattern shape and may have a thickness of 0.01 to 4.0 mm.
  • the metal film 4 has substantially the same shape as the conductor layer 3 and may have a thickness of 0.05 to 0.5 ⁇ m.
  • the bonding material 5 for bonding the semiconductor element 6 to the conductor layer 3 may be applied as a brazing material to the surface of the conductor layer 3 or the metal film 4 in the mounting region 3a.
  • the bonding material 5 may be formed as a plating layer by electrolytic plating only on the surface of the conductor layer 3 or the metal film 4 in the mounting region 3a using a mask or the like.
  • the bonding material 5 may be etched so as to leave a portion of the mounting region 3a after forming a plating layer by electrolytic plating on the entire surface of the conductor layer 3 or the metal film 4.
  • the ceramic circuit board 1 described above constitutes a power module by mounting a power element as the semiconductor element 6.
  • the power module of this embodiment is filled in the ceramic circuit board 1, the power element mounted on the mounting region 3a, the ceramic circuit board 1 and the power element, and the casing. And a sealing resin for sealing the power element.
  • FIG. 1 is a cross-sectional view showing a configuration of a power module 100 as an example of the first embodiment.
  • the power module 100 of the present example is mounted with a housing 102 having an inner space S, lead terminals 103 led out from the inner space S through the housing 102, and a semiconductor element 6 as a power element.
  • the ceramic circuit board 1 and the sealing resin 107 filled in the inner space S are provided.
  • the housing 102 includes a frame body 104 and a heat radiating plate 105 that closes one opening of the frame body 104.
  • a space surrounded by the frame body 104 and the heat radiating plate 105 is an inner space S.
  • the lead terminal 103 passes through the frame body 104.
  • the power module 100 is used in, for example, an automobile, and is used in various control units such as an ECU (engine control unit), a power assist handle, and a motor drive.
  • the power element is a semiconductor element used for power control in such a control unit.
  • the ceramic circuit board 1 is formed, for example, by bonding a conductive layer 3 made of a Cu plate having a thickness of 0.3 mm to 0.8 mm to a ceramic substrate 2 with an active brazing material containing an active metal, and electrolessly bonding the surface of the conductive layer 3.
  • a Pd metal film having a thickness of 0.05 ⁇ m to 0.5 ⁇ m is formed by plating with Ni having a thickness of 0.5 ⁇ m to 8 ⁇ m as a base layer.
  • the frame body 104 is made of a resin material, a metal material, or a mixed material thereof, and one opening is closed by the heat radiating plate 105 to form an inner space S in which the ceramic circuit board 1 is accommodated.
  • the material used for the frame body 104 is a metal material such as copper or aluminum or a resin such as polybutyl terephthalate (PBT) or polyphenylene sulfite (PPS) in terms of heat dissipation, heat resistance, environmental resistance and lightness. Material can be used. Among these, PBT resin is easily available. Moreover, in order to increase mechanical strength, PBT resin can be made into fiber reinforced resin by adding glass fiber.
  • the lead terminal 103 is a conductive terminal attached so as to penetrate from the inner space S to the outside through the frame body 104.
  • the end of the lead terminal 103 on the inner space S side is electrically connected to the conductor layer 3 of the ceramic circuit board 1.
  • the external end of the lead terminal 103 is electrically connected to an external electronic circuit (not shown) or a power supply device (not shown).
  • an external electronic circuit not shown
  • a power supply device not shown
  • various metal materials used for the lead terminal 103 for example, Cu and Cu alloy, Al and Al alloy, Fe and Fe alloy, stainless steel (SUS) and the like can be used.
  • the heat radiating plate 105 is for radiating heat generated in the power element during operation to the outside of the power module 100.
  • the heat radiating plate 105 can be made of a highly heat conductive material such as Al, Cu, or Cu—W.
  • Al has higher thermal conductivity than a metal material as a general structural material such as Fe. Since Al can dissipate heat generated in the power element more efficiently to the outside of the power module 100, the power element can be stably operated normally.
  • Al is easily available and inexpensive compared with other high thermal conductivity materials such as Cu or Cu—W, it is advantageous for reducing the cost of the power module 100.
  • the heat sink 105 and the ceramic circuit board 1 may be firmly joined with a brazing material or the like, may be joined with grease or the like, and may be further joined with a sealing resin 107 as described later.
  • the sealing resin 107 fills the inner space S and seals and protects the power element mounted on the ceramic circuit board 1.
  • the bonding of the ceramic circuit board 1 and the heat sink 105 and the sealing of the inner space S may be performed with the same sealing resin 107. In this case, joining of the ceramic circuit board 1 and the heat sink 105 and resin sealing can be performed in the same process.
  • the sealing resin 107 may be a thermosetting resin such as a silicone resin, an epoxy resin, or a phenol resin from the viewpoint of thermal conductivity, insulation, environment resistance, and sealing properties.
  • the power module 100 cools cooling fins or the like via grease 106 or the like on the exposed surface of the heat dissipation plate 105 opposite to the side on which the ceramic circuit board 1 is bonded.
  • the vessel 108 may be joined.
  • the bonding strength of the sealing resin 107 can be improved, and the power module 100 having high reliability can be realized.
  • the ceramic circuit board 1 described above constitutes a light emitting device by mounting a light emitting element as the semiconductor element 6.
  • the light emitting device of the present embodiment includes the ceramic circuit board 1 described above, a light emitting element mounted on the mounting region 3a, and a sealing resin that seals the light emitting element.
  • FIG. 2 is a cross-sectional view illustrating a configuration of a light emitting device 200 that is an example of the present embodiment.
  • the light emitting device 200 of this example includes a ceramic circuit board 1, a semiconductor element 6 that is a light emitting element mounted on the ceramic circuit board 1, a sealing resin 207 that seals the light emitting element, and an external connection wiring 209. .
  • the light emitting element is a semiconductor element that emits light, such as an LED (light emitting diode) or an LD (semiconductor laser).
  • the sealing resin 207 protects the light emitting element, the conductor layer 3 and the metal film 4. Even if the sealing resin 207 has a function of absorbing and radiating heat generated in the light emitting element and a wavelength converting function of emitting fluorescence excited by light emitted from the light emitting element by including a fluorescent substance or the like. Good.
  • the sealing resin 207 may have an optical lens function for converging or diverging light emitted by forming a curved surface as in the present embodiment.
  • the sealing resin 207 for example, a translucent resin that transmits light emitted from the light emitting element such as a silicone resin, an acrylic resin, or an epoxy resin can be used.
  • the ceramic substrate 2 of the ceramic circuit board 1 has a recess, the light emitting element is mounted on the mounting area 3a on the bottom surface of the recess, and the sealing resin 207 covers the light emitting element, the conductor layer 3, and the metal film 4 in the recess. It may be filled.
  • the ceramic circuit board 1 is formed by forming a conductive layer 3 made of Cu having a thickness of 0.1 m to 0.5 m by electrolytic plating by forming a base layer as a thin film on the ceramic substrate 2, for example.
  • a Pd metal film 4 having a thickness of 0.05 ⁇ m to 0.5 ⁇ m is formed on the surface of the substrate 3 by electrolytic plating and using Ni having a thickness of 0.5 ⁇ m to 8 ⁇ m as an underlayer.
  • the ceramic circuit board 1 includes an external connection wiring 209 for connection to an external electric circuit or the like.
  • the external connection wiring 209 for example, a through conductor that penetrates the ceramic substrate 2 in the thickness direction and is connected to the conductor layer 3, a connection pad that is connected to the through conductor, and the like can be appropriately combined.
  • the bonding strength of the sealing resin 207 can be improved, and the light emitting device 200 having high reliability can be realized.
  • the ceramic circuit board 1 ⁇ / b> A of the second embodiment includes a ceramic substrate 2, a conductor layer 3 made of Cu, and a metal film 4 ⁇ / b> A that covers the conductor layer 3.
  • the ceramic circuit board 1A of the second embodiment is the same as the ceramic circuit board 1 of the first embodiment except that the configuration of the metal film 4A is different, the metal film 4A will be described below, and the other structures will be described. Detailed description will be omitted.
  • the metal film 4 of the first embodiment covers a portion other than the mounting region 3a among the exposed portions of the conductor layer 3.
  • the metal film 4A of the present embodiment also covers the mounting region 3a. That is, the metal film 4 ⁇ / b> A of the present embodiment covers the entire exposed portion of the conductor layer 3.
  • the semiconductor element 6 is mounted on the conductor layer 3 via a bonding material 5 containing Ag.
  • the bonding material 5 containing Ag has oxygen permeability, and an oxide film (copper oxide film) grows on the surface of the conductor layer 3 to increase the film thickness, which is likely to cause breakdown in the oxide film. Become. Even in the mounting region 3 a where the bonding material 5 covers the conductor layer 3, the bonding strength may be reduced due to breakage in the film.
  • the metal coating 4A also covers the mounting region 3a, so that the bonding material 5 is not bonded to the conductor layer 3 but bonded to the metal coating 4A.
  • the oxidation of Cu in the mounting region 3a does not occur, and a copper oxide film that causes a decrease in bonding strength is not formed on the surface. Therefore, in the ceramic circuit board 1A of the present embodiment, in addition to improving the bonding strength between the ceramic circuit board 1 and the sealing resin, the bonding strength between the ceramic circuit board 1A and the semiconductor element 6 can also be improved.
  • FIG. 3 is a cross-sectional view illustrating a configuration of a power module 100A that is an example of the second embodiment.
  • the power module 100A includes the ceramic circuit board 1A, a power element (semiconductor element 6) mounted in the mounting area 3a, a casing 102 in which the ceramic circuit board 1A and the power element are stored, And a sealing resin 107 that seals the power element.
  • the power module 100A of this example is the same as the power module 100 as an example of the first embodiment except that the ceramic circuit board 1A is provided instead of the ceramic circuit board 1, detailed description thereof is omitted.
  • the bonding strength of the sealing resin 107 and the bonding strength of the semiconductor element 6 can be improved, and the power module 100A having high reliability can be realized.
  • the ceramic circuit board 1A described above constitutes a light emitting device by mounting a light emitting element.
  • FIG. 4 is a cross-sectional view illustrating a configuration of a light emitting device 200A that is an example of the present embodiment.
  • the light emitting device 200A includes a ceramic circuit board 1A, a light emitting element (semiconductor element 6) mounted on the ceramic circuit board 1A, a sealing resin 207 that seals the light emitting element, and an external connection wiring 209.
  • the light-emitting device 200A of this example is the same as the light-emitting device 200 that is an example of the first embodiment except that the ceramic circuit substrate 1A is provided instead of the ceramic circuit substrate 1, and thus detailed description thereof is omitted.
  • the bonding strength of the sealing resin 207 and the bonding strength of the light emitting element can be improved, and the light emitting device 200A having high reliability can be realized.

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  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
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Abstract

The present invention pertains to a ceramic circuit substrate in which the strength of bonding with a sealing resin is enhanced, and a power module and a light emission device with which it is possible to achieve a high degree of reliability. The ceramic circuit substrate 1 is provided with a ceramic substrate 2, a conductor layer 3 made of Cu, and a metal coating 4 coating the conductor layer 3. The metal coating 4 is made of a material having, as the main component, one or more elements selected from the group consisting of Ir, Rh, Pd, Pt, Al, Ti, W, Ta, and Nb.

Description

セラミック回路基板、パワーモジュールおよび発光装置Ceramic circuit board, power module and light emitting device
　本発明は、セラミック回路基板、パワーモジュールおよび発光装置に関する。 The present invention relates to a ceramic circuit board, a power module, and a light emitting device.
　セラミック回路基板において、例えば電気抵抗を低く抑えるなどの理由で、信号配線などの導電体材料にＣｕ（銅）を用いる場合がある（例えば、特許文献１参照）。一方で、セラミック回路基板の表面に搭載された半導体素子は、保護のために樹脂材料により封止される（例えば、特許文献２参照）。 In a ceramic circuit board, for example, Cu (copper) may be used as a conductor material such as signal wiring for the purpose of keeping electric resistance low (see, for example, Patent Document 1). On the other hand, the semiconductor element mounted on the surface of the ceramic circuit board is sealed with a resin material for protection (see, for example, Patent Document 2).
国際公開第２０１５／１１４９８７号International Publication No. 2015/114987 特開平８－２１３５４７号公報JP-A-8-213547
　本開示のセラミック回路基板は、セラミック基板と、半導体素子が搭載される搭載領域を有する、前記セラミック基板の表面に配設された、Ｃｕからなる導体層と、前記導体層の、少なくとも前記搭載領域以外の領域を被覆する金属皮膜と、を備える。金属皮膜は、Ｉｒ、Ｒｈ、Ｐｄ、Ｐｔ、Ａｌ、Ｔｉ、Ｗ、ＴａおよびＮｂからなる群から選ばれる１種または２種以上を主成分とする材料からなる。 A ceramic circuit board according to the present disclosure includes a ceramic substrate, a conductive layer made of Cu disposed on a surface of the ceramic substrate, and a mounting region on which the semiconductor element is mounted, and at least the mounting region of the conductive layer. A metal film covering a region other than the above. The metal film is made of a material mainly composed of one or more selected from the group consisting of Ir, Rh, Pd, Pt, Al, Ti, W, Ta, and Nb.
　本開示のパワーモジュールは、上記のセラミック回路基板と、前記搭載領域に搭載された半導体素子であるパワー素子と、前記セラミック回路基板と前記パワー素子とが収納される筐体と、前記筐体内に充填されて、前記パワー素子を封止する封止樹脂と、を備える。 A power module according to the present disclosure includes the above-described ceramic circuit board, a power element that is a semiconductor element mounted in the mounting region, a casing in which the ceramic circuit board and the power element are stored, and the casing A sealing resin that is filled and seals the power element.
　本開示の発光装置は、上記のセラミック回路基板と、前記搭載領域に搭載された半導体素子である発光素子と、前記発光素子を封止する封止樹脂と、を備える。 A light-emitting device of the present disclosure includes the above-described ceramic circuit board, a light-emitting element that is a semiconductor element mounted in the mounting region, and a sealing resin that seals the light-emitting element.
　本発明の目的、特色、および利点は、下記の詳細な説明と図面とからより明確になるであろう。
第１実施形態の一例であるパワーモジュールの構成を示す断面図である。 第１実施形態の一例である発光装置の構成を示す断面図である。 第２実施形態の一例であるパワーモジュールの構成を示す断面図である。 第２実施形態の一例である発光装置の構成を示す断面図である。 Objects, features, and advantages of the present invention will become more apparent from the following detailed description and drawings.
It is sectional drawing which shows the structure of the power module which is an example of 1st Embodiment. It is sectional drawing which shows the structure of the light-emitting device which is an example of 1st Embodiment. It is sectional drawing which shows the structure of the power module which is an example of 2nd Embodiment. It is sectional drawing which shows the structure of the light-emitting device which is an example of 2nd Embodiment.
＜第１実施形態＞
（セラミック回路基板）
　第１実施形態のセラミック回路基板１は、セラミック基板２と、Ｃｕからなる導体層３と、導体層３を被覆する金属皮膜４と、を備えている。 <First Embodiment>
(Ceramic circuit board)
The ceramic circuit board 1 according to the first embodiment includes a ceramic substrate 2, a conductor layer 3 made of Cu, and a metal film 4 that covers the conductor layer 3.
　セラミック基板２は、セラミックス焼結体からなり、パワー素子または発光素子のような発熱量が比較的多い半導体素子を搭載するための基板である。セラミック基板２は、高い機械的強度および高い伝熱特性（冷却特性）などの特性を有する。セラミックス焼結体としては、公知の材料を用いることができる。公知の材料としては、例えば、アルミナ（Ａｌ２Ｏ３）焼結体、窒化アルミニウム（ＡｌＮ）焼結体および窒化ケイ素（Ｓｉ３Ｎ４）焼結体などを用いることができる。 The ceramic substrate 2 is a substrate for mounting a semiconductor element made of a ceramic sintered body and having a relatively large amount of heat generation such as a power element or a light emitting element. The ceramic substrate 2 has characteristics such as high mechanical strength and high heat transfer characteristics (cooling characteristics). A known material can be used as the ceramic sintered body. As a known material, for example, an alumina (Al 2 O 3 ) sintered body, an aluminum nitride (AlN) sintered body, a silicon nitride (Si 3 N 4 ) sintered body, or the like can be used.
　セラミック基板２は、公知の製造方法によって製造することができる。公知の製造方法は、例えば、アルミナなどの原料粉末に焼結助剤を添加し、基板状に成形したのち、焼成することで製造することができる。 The ceramic substrate 2 can be manufactured by a known manufacturing method. A known production method can be produced, for example, by adding a sintering aid to a raw material powder such as alumina, forming it into a substrate, and then firing it.
　本実施形態の導体層３は、Ｃｕ（銅）からなり、セラミック基板２の少なくとも一表面上に、例えば配線状などのパターン形状で配設される。導体層３は、搭載される半導体素子と、例えばボンディングワイヤなどの接続部材で電気的に接続される。さらに導体層３は、外部の電気回路などと電気的に接続され、半導体素子と外部の電気回路との間で、電力の伝送、制御信号の伝送を行う。 The conductor layer 3 of the present embodiment is made of Cu (copper) and is disposed on at least one surface of the ceramic substrate 2 in a pattern shape such as a wiring shape. The conductor layer 3 is electrically connected to a semiconductor element to be mounted by a connecting member such as a bonding wire. Furthermore, the conductor layer 3 is electrically connected to an external electric circuit or the like, and transmits electric power and control signals between the semiconductor element and the external electric circuit.
　半導体素子と導体層３とは、電気的に接続されるので、導体層３の少なくとも一部がセラミック基板２の半導体素子の搭載面と同じ面に配設される。そうすると、半導体素子を保護する封止樹脂は、半導体素子とともにＣｕからなる導体層３の一部を覆うこととなる。 Since the semiconductor element and the conductor layer 3 are electrically connected, at least a part of the conductor layer 3 is disposed on the same surface as the semiconductor element mounting surface of the ceramic substrate 2. If it does so, sealing resin which protects a semiconductor element will cover a part of conductor layer 3 which consists of Cu with a semiconductor element.
　半導体素子の発熱が比較的大きい場合、導体層３の表面において、酸化皮膜（酸化銅皮膜）が成長して膜厚が増加し、酸化皮膜内での破壊が生じ易くなる。封止樹脂が、導体層３を覆う部分において、皮膜内破壊によって接合強度が低下してしまうことがある。 When the heat generation of the semiconductor element is relatively large, an oxide film (copper oxide film) grows on the surface of the conductor layer 3 to increase the film thickness, and the oxide film is easily broken. In the portion where the sealing resin covers the conductor layer 3, the bonding strength may be reduced due to breakdown in the film.
　導体層３は、Ｃｕ粉末とバインダ樹脂などを含むペーストを印刷塗布し、セラミック基板２と同時焼成してメタライズ層を形成することで形成できる。あるいは、導体層３は、セラミック基板２上にＣｕ箔（Ｃｕ板）を接合したり、セラミック基板２上にＣｕのめっき被膜を形成することで形成できる。ペーストを印刷塗布する場合は、予め形成すべきパターン形状で印刷塗布すればよい。Ｃｕ箔（Ｃｕ板）を用いる場合は、全面に接合後にエッチングなどによりパターン形成すればよい。めっき被膜を形成する場合は、薄膜やメタライズ層で下地層を形成して電解めっきで形成あるいはマスクを用いて無電解めっきで形成してもよい。 The conductor layer 3 can be formed by printing and applying a paste containing Cu powder and a binder resin, and simultaneously firing with the ceramic substrate 2 to form a metallized layer. Alternatively, the conductor layer 3 can be formed by bonding a Cu foil (Cu plate) on the ceramic substrate 2 or forming a Cu plating film on the ceramic substrate 2. When the paste is printed and applied, it may be printed and applied in a pattern shape to be formed in advance. When using a Cu foil (Cu plate), a pattern may be formed by etching or the like after bonding to the entire surface. In the case of forming a plating film, an underlayer may be formed by a thin film or a metallized layer and formed by electrolytic plating or by electroless plating using a mask.
　導体層３には、例えばＡｇを含む接合材５を介して半導体素子６が搭載されるための搭載領域３ａが設けられる。本実施形態では、金属皮膜４は、導体層３の露出した部分のうち、搭載領域３ａ以外の部分を被覆している。導体層３の搭載領域３ａ以外の部分は、従来では、封止樹脂が導体層３に直接接触して接合される部分であり、酸化銅の皮膜が形成されてしまう部分である。本実施形態では、この部分を、特定の金属種を主成分とする材料からなる金属皮膜４で被覆している。なお、金属皮膜４は、少なくとも搭載領域３ａ以外の部分を被覆すればよく、本実施形態のように搭載領域３ａを被覆しない構成であっても、後述の第２実施形態のように搭載領域３ａも被覆する構成であってもよい。 The conductor layer 3 is provided with a mounting region 3a for mounting the semiconductor element 6 via, for example, a bonding material 5 containing Ag. In the present embodiment, the metal coating 4 covers a portion other than the mounting region 3 a among the exposed portions of the conductor layer 3. Conventionally, the portion other than the mounting region 3a of the conductor layer 3 is a portion where the sealing resin is directly contacted and joined to the conductor layer 3, and is a portion where a copper oxide film is formed. In the present embodiment, this portion is covered with a metal film 4 made of a material mainly containing a specific metal species. The metal film 4 only needs to cover at least a portion other than the mounting area 3a. Even if the metal film 4 is configured not to cover the mounting area 3a as in the present embodiment, the mounting area 3a as in the second embodiment described later. Also, it may be configured to cover.
　金属皮膜４は、Ｉｒ、Ｒｈ、Ｐｄ、Ｐｔ、Ａｌ、Ｔｉ、Ｗ、ＴａおよびＮｂからなる群から選ばれる１種または２種以上を主成分とする材料からなる。金属皮膜４は、Ｉｒ、Ｒｈ、ＰｄおよびＰｔからなる群から選ばれる１種または２種以上を主成分とする材料からなるものであってもよい。金属皮膜４は、Ｐｄを主成分とする材料からなるものであってもよい。 The metal film 4 is made of a material mainly composed of one or more selected from the group consisting of Ir, Rh, Pd, Pt, Al, Ti, W, Ta and Nb. The metal film 4 may be made of a material mainly composed of one or more selected from the group consisting of Ir, Rh, Pd and Pt. The metal film 4 may be made of a material mainly composed of Pd.
　本実施形態において、主成分とは、金属皮膜４を構成する材料中、９０質量％以上を占める材料である。本実施形態では、金属皮膜４を構成する材料として、主成分以外に例えばＰ（りん）、Ｂ（ホウ素）などを含有していてもよい。 In the present embodiment, the main component is a material occupying 90% by mass or more in the material constituting the metal film 4. In the present embodiment, the material constituting the metal film 4 may contain, for example, P (phosphorus), B (boron), etc. in addition to the main component.
　金属皮膜４は、主成分が、Ｉｒ、Ｒｈ、Ｐｄ、Ｐｔ、Ａｌ、Ｔｉ、Ｗ、ＴａおよびＮｂからなる群から選ばれる一種であるので、搭載された半導体素子６の発熱により高温状態となった場合に、金属皮膜４の表面には厚さが比較的薄い酸化膜である不動態膜が形成され、殆んど膜成長しない（厚さが増加しない）。さらに、この薄い不動態膜は、封止樹脂との水素結合によって強固に接合される。 The metal film 4 is a kind whose main component is selected from the group consisting of Ir, Rh, Pd, Pt, Al, Ti, W, Ta, and Nb, so that it becomes a high temperature state due to heat generation of the mounted semiconductor element 6. In this case, a passive film which is an oxide film having a relatively small thickness is formed on the surface of the metal film 4, and the film hardly grows (thickness does not increase). Furthermore, this thin passive film is firmly bonded by hydrogen bonding with the sealing resin.
　また、Ｃｕからなる導体層３は、金属皮膜４によって被覆されているので、高温状態となってもＣｕの酸化が生じず、接合強度低下の原因となる酸化銅皮膜が表面に形成されない。したがって、本実施形態のセラミック回路基板１では、半導体素子６が搭載されて樹脂封止された場合であっても、セラミック回路基板１と封止樹脂との接合強度を向上させることができる。 Further, since the conductor layer 3 made of Cu is covered with the metal film 4, the copper oxide film which causes the reduction of the bonding strength is not formed on the surface because the Cu is not oxidized even at a high temperature state. Therefore, in the ceramic circuit board 1 of this embodiment, even when the semiconductor element 6 is mounted and resin-sealed, the bonding strength between the ceramic circuit board 1 and the sealing resin can be improved.
　金属皮膜４の有無のみが異なるセラミック回路基板をそれぞれ準備し、樹脂封止したのち、引っ張り試験によって封止樹脂の引っ張り強度を測定した。金属皮膜４が設けられた本実施形態のセラミック回路基板１は、金属皮膜４が設けられていないセラミック回路基板に比べて、およそ２倍の引っ張り強度を示した。 Ceramic circuit boards differing only in the presence or absence of the metal film 4 were prepared and sealed with resin, and then the tensile strength of the sealing resin was measured by a tensile test. The ceramic circuit board 1 of the present embodiment provided with the metal film 4 exhibited a tensile strength approximately twice that of the ceramic circuit board not provided with the metal film 4.
　金属皮膜４は、導体層３の搭載領域３ａ以外の部分を被覆できれば、どのような方法で形成してもよい。例えば、スパッタ、蒸着などの薄膜形成法、無電解めっき、電解めっきなどのめっき法によって導体層３上に皮膜を形成すればよい。金属皮膜４は、Ｉｒ、Ｒｈ、Ｐｄ、Ｐｔ、Ａｌ、Ｔｉ、Ｗ、ＴａおよびＮｂのうち、Ｉｒ、Ｒｈ、ＰｄおよびＰｔからなる群から選ばれる１種または２種以上を主成分とする材料からなる場合は、蒸着等に比較して低コストで量産性に優れるめっき法により形成することが容易である。これらの中でもＰｄを主成分とする材料からなる場合にはめっき法を用いることで、より低コストで形成することができる。また、金属皮膜４は、Ｃｕからなる導体層３を直接被覆してもよく、導体層３との間に、例えば、Ｎｉなどからなる下地層を設けてもよい。 The metal film 4 may be formed by any method as long as it can cover a portion other than the mounting region 3 a of the conductor layer 3. For example, a film may be formed on the conductor layer 3 by a thin film forming method such as sputtering or vapor deposition, or a plating method such as electroless plating or electrolytic plating. The metal film 4 is a material mainly composed of one or more selected from the group consisting of Ir, Rh, Pd and Pt among Ir, Rh, Pd, Pt, Al, Ti, W, Ta and Nb. When it consists of, it is easy to form by the plating method which is low-cost and excellent in mass productivity compared with vapor deposition etc. Among these, when made of a material containing Pd as a main component, it can be formed at a lower cost by using a plating method. Further, the metal film 4 may directly cover the conductor layer 3 made of Cu, and a base layer made of Ni or the like may be provided between the metal film 4 and the conductor layer 3.
　セラミック基板２、導体層３および金属皮膜４は、搭載する半導体素子の種類、セラミック回路基板１が組み込まれる装置の種類などにより、要求される特性に応じて、その形状、および厚さ、幅などの寸法を適宜設定すればよい。 The ceramic substrate 2, the conductor layer 3, and the metal coating 4 have shapes, thicknesses, widths, and the like according to required characteristics depending on the type of semiconductor element to be mounted, the type of device in which the ceramic circuit board 1 is incorporated, and the like. The dimensions may be set as appropriate.
　一例として、セラミック基板２は、矩形板状であり、縦が２～６０ｍｍ、横が２～６０ｍｍ厚さが０．２～１．０ｍｍであってもよい。導体層３は、予め定めるパターン形状であり、厚さが、０．０１～４．０ｍｍであってもよい。金属皮膜４は、導体層３とほぼ同じ形状であり、厚さが、０．０５～０．５μｍであってもよい。 As an example, the ceramic substrate 2 has a rectangular plate shape, and may have a length of 2 to 60 mm, a width of 2 to 60 mm, and a thickness of 0.2 to 1.0 mm. The conductor layer 3 has a predetermined pattern shape and may have a thickness of 0.01 to 4.0 mm. The metal film 4 has substantially the same shape as the conductor layer 3 and may have a thickness of 0.05 to 0.5 μm.
　半導体素子６を導体層３に接合するための接合材５は、ろう材として搭載領域３ａの導体層３表面または金属皮膜４表面に塗布してもよい。接合材５は、マスクなどを用いて搭載領域３ａの導体層３表面または金属皮膜４表面にのみ電解めっきによるめっき層として形成してもよい。接合材５は、導体層３表面または金属皮膜４表面の全体に電解めっきによるめっき層を形成したのち、搭載領域３ａの部分を残すようにエッチングしてもよい。 The bonding material 5 for bonding the semiconductor element 6 to the conductor layer 3 may be applied as a brazing material to the surface of the conductor layer 3 or the metal film 4 in the mounting region 3a. The bonding material 5 may be formed as a plating layer by electrolytic plating only on the surface of the conductor layer 3 or the metal film 4 in the mounting region 3a using a mask or the like. The bonding material 5 may be etched so as to leave a portion of the mounting region 3a after forming a plating layer by electrolytic plating on the entire surface of the conductor layer 3 or the metal film 4.
（パワーモジュール）
　本実施形態では、上記のセラミック回路基板１が、半導体素子６としてパワー素子を搭載してパワーモジュールを構成するものである。本実施形態のパワーモジュールは、上記のセラミック回路基板１と、搭載領域３ａに搭載されたパワー素子と、セラミック回路基板１とパワー素子とが収納される筐体と、筐体内に充填されて、パワー素子を封止する封止樹脂と、を備える。 (Power module)
In the present embodiment, the ceramic circuit board 1 described above constitutes a power module by mounting a power element as the semiconductor element 6. The power module of this embodiment is filled in the ceramic circuit board 1, the power element mounted on the mounting region 3a, the ceramic circuit board 1 and the power element, and the casing. And a sealing resin for sealing the power element.
　図１は、第１実施形態の一例であるパワーモジュール１００の構成を示す断面図である。本例のパワーモジュール１００は、内側空間Ｓを有する筐体１０２と、内側空間Ｓから筐体１０２を貫通して外部へ導出されたリード端子１０３と、パワー素子である半導体素子６が搭載されたセラミック回路基板１と、内側空間Ｓに充填された封止樹脂１０７とを備えている。本例では、筐体１０２は、枠体１０４と、この枠体１０４の一方の開口を塞ぐ放熱板１０５とで構成されている。枠体１０４と放熱板１０５とで囲まれた空間が内側空間Ｓとなる。リード端子１０３は、枠体１０４を貫通している。 FIG. 1 is a cross-sectional view showing a configuration of a power module 100 as an example of the first embodiment. The power module 100 of the present example is mounted with a housing 102 having an inner space S, lead terminals 103 led out from the inner space S through the housing 102, and a semiconductor element 6 as a power element. The ceramic circuit board 1 and the sealing resin 107 filled in the inner space S are provided. In this example, the housing 102 includes a frame body 104 and a heat radiating plate 105 that closes one opening of the frame body 104. A space surrounded by the frame body 104 and the heat radiating plate 105 is an inner space S. The lead terminal 103 passes through the frame body 104.
　パワーモジュール１００は、例えば、自動車などに用いられ、ＥＣＵ（engine control unit）およびパワーアシストハンドル、モータドライブなどの各種制御ユニットに使用される。パワー素子は、このような制御ユニットにおいて、電力制御のために用いられる半導体素子である。 The power module 100 is used in, for example, an automobile, and is used in various control units such as an ECU (engine control unit), a power assist handle, and a motor drive. The power element is a semiconductor element used for power control in such a control unit.
　セラミック回路基板１は、例えば、セラミック基板２に厚みが０．３ｍｍ～０．８ｍｍのＣｕ板からなる導体層３を、活性金属を含む活性ろう材で接合し、導体層３の表面に無電解めっきにより厚みが０．５μｍ～８μｍのＮｉを下地層とする、厚みが０．０５μｍ～０．５μｍのＰｄの金属皮膜を形成したものである。 The ceramic circuit board 1 is formed, for example, by bonding a conductive layer 3 made of a Cu plate having a thickness of 0.3 mm to 0.8 mm to a ceramic substrate 2 with an active brazing material containing an active metal, and electrolessly bonding the surface of the conductive layer 3. A Pd metal film having a thickness of 0.05 μm to 0.5 μm is formed by plating with Ni having a thickness of 0.5 μm to 8 μm as a base layer.
　枠体１０４は、樹脂材料、金属材料またはこれらの混合材料からなり、放熱板１０５により一方の開口が塞がれてセラミック回路基板１を収納する内側空間Ｓを形成している。枠体１０４に用いられる材料としては、放熱性、耐熱性、耐環境性および軽量性の点から、銅、アルミニウムなどの金属材料またはポリブチルテレフタレート（ＰＢＴ）、ポリフェニレンサルファイト（ＰＰＳ）などの樹脂材料を使用することができる。これらの中でも、ＰＢＴ樹脂が入手しやすい。また、ＰＢＴ樹脂は、機械的強度を増大させるために、ガラス繊維を添加して繊維強化樹脂とすることができる。 The frame body 104 is made of a resin material, a metal material, or a mixed material thereof, and one opening is closed by the heat radiating plate 105 to form an inner space S in which the ceramic circuit board 1 is accommodated. The material used for the frame body 104 is a metal material such as copper or aluminum or a resin such as polybutyl terephthalate (PBT) or polyphenylene sulfite (PPS) in terms of heat dissipation, heat resistance, environmental resistance and lightness. Material can be used. Among these, PBT resin is easily available. Moreover, in order to increase mechanical strength, PBT resin can be made into fiber reinforced resin by adding glass fiber.
　リード端子１０３は、内側空間Ｓから枠体１０４を貫通して外部へ導出するように取り付けられている、導電性の端子である。このリード端子１０３の内側空間Ｓ側の端部はセラミック回路基板１の導体層３と電気的に接続される。リード端子１０３の外部側の端部は外部の電子回路（図示せず）または電源装置（図示せず）などと電気的に接続される。このリード端子１０３に用いられる各種の金属材料は、例えばＣｕおよびＣｕ合金、ＡｌおよびＡｌ合金、ＦｅおよびＦｅ合金、ステンレススチール（ＳＵＳ）等を用いることができる。 The lead terminal 103 is a conductive terminal attached so as to penetrate from the inner space S to the outside through the frame body 104. The end of the lead terminal 103 on the inner space S side is electrically connected to the conductor layer 3 of the ceramic circuit board 1. The external end of the lead terminal 103 is electrically connected to an external electronic circuit (not shown) or a power supply device (not shown). As various metal materials used for the lead terminal 103, for example, Cu and Cu alloy, Al and Al alloy, Fe and Fe alloy, stainless steel (SUS) and the like can be used.
　放熱板１０５は、動作時にパワー素子で生じた熱を、パワーモジュール１００の外部に放熱するためのものである。この放熱板１０５には、Ａｌ、Ｃｕ、Ｃｕ－Ｗなどの高熱伝導性材料を使用することができる。特に、ＡｌはＦｅなどの一般的な構造材料としての金属材料と比べて熱伝導性が高い。Ａｌはパワー素子で生じた熱をより効率的にパワーモジュール１００の外部に放熱できるので、パワー素子を安定して正常に動作させることが可能となる。また、ＡｌはＣｕあるいはＣｕ－Ｗなどの他の高熱伝導性材料と比較して、入手しやすく安価であることから、パワーモジュール１００の低コスト化にも有利になる。 The heat radiating plate 105 is for radiating heat generated in the power element during operation to the outside of the power module 100. The heat radiating plate 105 can be made of a highly heat conductive material such as Al, Cu, or Cu—W. In particular, Al has higher thermal conductivity than a metal material as a general structural material such as Fe. Since Al can dissipate heat generated in the power element more efficiently to the outside of the power module 100, the power element can be stably operated normally. In addition, since Al is easily available and inexpensive compared with other high thermal conductivity materials such as Cu or Cu—W, it is advantageous for reducing the cost of the power module 100.
　放熱板１０５とセラミック回路基板１とは、ろう材などで強固に接合してもよく、グリスなどで接合してもよく、さらに後述のように封止樹脂１０７によって接合してもよい。 The heat sink 105 and the ceramic circuit board 1 may be firmly joined with a brazing material or the like, may be joined with grease or the like, and may be further joined with a sealing resin 107 as described later.
　封止樹脂１０７は、内側空間Ｓに充填され、セラミック回路基板１に搭載されたパワー素子を封止して保護するものである。セラミック回路基板１と放熱板１０５との接合と内側空間Ｓの封止とを同じ封止樹脂１０７で行なってもよい。この場合、セラミック回路基板１と放熱板１０５との接合と、樹脂封止と、を同一工程で行うことができる。 The sealing resin 107 fills the inner space S and seals and protects the power element mounted on the ceramic circuit board 1. The bonding of the ceramic circuit board 1 and the heat sink 105 and the sealing of the inner space S may be performed with the same sealing resin 107. In this case, joining of the ceramic circuit board 1 and the heat sink 105 and resin sealing can be performed in the same process.
　封止樹脂１０７には、熱伝導性、絶縁性、耐環境性および封止性の点から、シリコーン樹脂、エポキシ樹脂、フェノール樹脂などの熱硬化性樹脂を使用することができる。 The sealing resin 107 may be a thermosetting resin such as a silicone resin, an epoxy resin, or a phenol resin from the viewpoint of thermal conductivity, insulation, environment resistance, and sealing properties.
　パワーモジュール１００は、さらに放熱特性を向上させるために、放熱板１０５の、セラミック回路基板１が接合されている側とは反対側の露出した面に、グリス１０６などを介して冷却フィンなどの冷却器１０８を接合してもよい。 In order to further improve the heat dissipation characteristics, the power module 100 cools cooling fins or the like via grease 106 or the like on the exposed surface of the heat dissipation plate 105 opposite to the side on which the ceramic circuit board 1 is bonded. The vessel 108 may be joined.
　パワーモジュール１００に、セラミック回路基板１を用いることで、封止樹脂１０７の接合強度を向上させることができ、高い信頼性を有するパワーモジュール１００を実現できる。 By using the ceramic circuit board 1 for the power module 100, the bonding strength of the sealing resin 107 can be improved, and the power module 100 having high reliability can be realized.
（発光装置）
　本実施形態では、上記のセラミック回路基板１が、半導体素子６として発光素子を搭載して発光装置を構成するものである。本実施形態の発光装置は、上記のセラミック回路基板１と、搭載領域３ａに搭載された発光素子と、発光素子を封止する封止樹脂と、を備える。 (Light emitting device)
In the present embodiment, the ceramic circuit board 1 described above constitutes a light emitting device by mounting a light emitting element as the semiconductor element 6. The light emitting device of the present embodiment includes the ceramic circuit board 1 described above, a light emitting element mounted on the mounting region 3a, and a sealing resin that seals the light emitting element.
　図２は、本実施形態の一例である発光装置２００の構成を示す断面図である。本例の発光装置２００は、セラミック回路基板１と、セラミック回路基板１に搭載される発光素子である半導体素子６と、発光素子を封止する封止樹脂２０７と、外部接続配線２０９とを備える。 FIG. 2 is a cross-sectional view illustrating a configuration of a light emitting device 200 that is an example of the present embodiment. The light emitting device 200 of this example includes a ceramic circuit board 1, a semiconductor element 6 that is a light emitting element mounted on the ceramic circuit board 1, a sealing resin 207 that seals the light emitting element, and an external connection wiring 209. .
　発光素子は、ＬＥＤ（発光ダイオード）またはＬＤ（半導体レーザ）など光を出射する半導体素子である。封止樹脂２０７は、発光素子および導体層３、金属皮膜４を保護する。封止樹脂２０７は、発光素子で生じた熱の吸収および発散する機能、蛍光物質などを含むことにより発光素子から出射された光によって励起された蛍光を出射する波長変換機能を有していてもよい。封止樹脂２０７は、本実施形態のように曲面状に形成することによって出射された光を集束または発散させる光学レンズ機能などを有していてもよい。封止樹脂２０７は、例えば、シリコーン樹脂、アクリル樹脂、エポキシ樹脂など発光素子から出射された光を透過する透光性の樹脂を用いることができる。セラミック回路基板１のセラミック基板２が凹部を有するものであり、凹部底面の搭載領域３ａに発光素子が搭載され、封止樹脂２０７が発光素子および導体層３、金属皮膜４を覆って凹部内に充填されていてもよい。 The light emitting element is a semiconductor element that emits light, such as an LED (light emitting diode) or an LD (semiconductor laser). The sealing resin 207 protects the light emitting element, the conductor layer 3 and the metal film 4. Even if the sealing resin 207 has a function of absorbing and radiating heat generated in the light emitting element and a wavelength converting function of emitting fluorescence excited by light emitted from the light emitting element by including a fluorescent substance or the like. Good. The sealing resin 207 may have an optical lens function for converging or diverging light emitted by forming a curved surface as in the present embodiment. As the sealing resin 207, for example, a translucent resin that transmits light emitted from the light emitting element such as a silicone resin, an acrylic resin, or an epoxy resin can be used. The ceramic substrate 2 of the ceramic circuit board 1 has a recess, the light emitting element is mounted on the mounting area 3a on the bottom surface of the recess, and the sealing resin 207 covers the light emitting element, the conductor layer 3, and the metal film 4 in the recess. It may be filled.
　本例では、セラミック回路基板１は、例えば、セラミック基板２に薄膜で下地層を形成して厚みが０．１ｍ～０．５ｍのＣｕからなる導体層３を、電解めっきで形成し、導体層３の表面に電解めっきにより厚みが０．５μｍ～８μｍのＮｉを下地層とする、厚みが０．０５μｍ～０．５μｍのＰｄの金属皮膜４を形成したものである。また、セラミック回路基板１は、外部の電気回路などと接続するために、外部接続配線２０９を備える。外部接続配線２０９は、例えば、セラミック基板２を厚さ方向に貫通して導体層３と接続する貫通導体や、貫通導体に接続される接続パッドなどを適宜組合わせることができる。 In this example, the ceramic circuit board 1 is formed by forming a conductive layer 3 made of Cu having a thickness of 0.1 m to 0.5 m by electrolytic plating by forming a base layer as a thin film on the ceramic substrate 2, for example. A Pd metal film 4 having a thickness of 0.05 μm to 0.5 μm is formed on the surface of the substrate 3 by electrolytic plating and using Ni having a thickness of 0.5 μm to 8 μm as an underlayer. Further, the ceramic circuit board 1 includes an external connection wiring 209 for connection to an external electric circuit or the like. As the external connection wiring 209, for example, a through conductor that penetrates the ceramic substrate 2 in the thickness direction and is connected to the conductor layer 3, a connection pad that is connected to the through conductor, and the like can be appropriately combined.
　発光装置２００に、セラミック回路基板１を用いることで、封止樹脂２０７の接合強度を向上させることができ、高い信頼性を有する発光装置２００を実現できる。 By using the ceramic circuit board 1 for the light emitting device 200, the bonding strength of the sealing resin 207 can be improved, and the light emitting device 200 having high reliability can be realized.
＜第２実施形態＞
（セラミック回路基板）
　第２実施形態のセラミック回路基板１Ａは、セラミック基板２と、Ｃｕからなる導体層３と、導体層３を被覆する金属皮膜４Ａと、を備えている。 Second Embodiment
(Ceramic circuit board)
The ceramic circuit board 1 </ b> A of the second embodiment includes a ceramic substrate 2, a conductor layer 3 made of Cu, and a metal film 4 </ b> A that covers the conductor layer 3.
　第２実施形態のセラミック回路基板１Ａは、金属皮膜４Ａの構成が異なること以外は第１実施形態のセラミック回路基板１と同様であるので、以下では金属皮膜４Ａについて説明し、その他の構成については、詳細な説明を省略する。 Since the ceramic circuit board 1A of the second embodiment is the same as the ceramic circuit board 1 of the first embodiment except that the configuration of the metal film 4A is different, the metal film 4A will be described below, and the other structures will be described. Detailed description will be omitted.
　上記のように、第１実施形態の金属皮膜４は、導体層３の露出した部分のうち、搭載領域３ａ以外の部分を被覆している。これに対して、本実施形態の金属皮膜４Ａは、搭載領域３ａも被覆している。すなわち、本実施形態の金属皮膜４Ａは、導体層３の露出した部分の全体を被覆している。 As described above, the metal film 4 of the first embodiment covers a portion other than the mounting region 3a among the exposed portions of the conductor layer 3. On the other hand, the metal film 4A of the present embodiment also covers the mounting region 3a. That is, the metal film 4 </ b> A of the present embodiment covers the entire exposed portion of the conductor layer 3.
　半導体素子６は、Ａｇを含む接合材５を介して導体層３に搭載される。Ａｇを含む接合材５は、酸素透過性を有しており、導体層３の表面において、酸化皮膜（酸化銅皮膜）が成長して膜厚が増加し、酸化皮膜内での破壊が生じ易くなる。接合材５が、導体層３を覆う搭載領域３ａにおいても、皮膜内破壊によって接合強度が低下してしまうことがある。 The semiconductor element 6 is mounted on the conductor layer 3 via a bonding material 5 containing Ag. The bonding material 5 containing Ag has oxygen permeability, and an oxide film (copper oxide film) grows on the surface of the conductor layer 3 to increase the film thickness, which is likely to cause breakdown in the oxide film. Become. Even in the mounting region 3 a where the bonding material 5 covers the conductor layer 3, the bonding strength may be reduced due to breakage in the film.
　本実施形態では、金属皮膜４Ａが、搭載領域３ａも被覆していることで、接合材５は、導体層３とは接合せず、金属皮膜４Ａと接合する。これにより、搭載領域３ａでのＣｕの酸化が生じず、接合強度低下の原因となる酸化銅皮膜が表面に形成されない。したがって、本実施形態のセラミック回路基板１Ａでは、セラミック回路基板１と封止樹脂との接合強度の向上に加えて、セラミック回路基板１Ａと半導体素子６との接合強度も向上させることができる。 In this embodiment, the metal coating 4A also covers the mounting region 3a, so that the bonding material 5 is not bonded to the conductor layer 3 but bonded to the metal coating 4A. Thereby, the oxidation of Cu in the mounting region 3a does not occur, and a copper oxide film that causes a decrease in bonding strength is not formed on the surface. Therefore, in the ceramic circuit board 1A of the present embodiment, in addition to improving the bonding strength between the ceramic circuit board 1 and the sealing resin, the bonding strength between the ceramic circuit board 1A and the semiconductor element 6 can also be improved.
（パワーモジュール）
　本実施形態では、上記のセラミック回路基板１Ａが、パワー素子を搭載してパワーモジュールを構成するものである。図３は、第２実施形態の一例であるパワーモジュール１００Ａの構成を示す断面図である。パワーモジュール１００Ａは、上記のセラミック回路基板１Ａと、搭載領域３ａに搭載されたパワー素子（半導体素子６）と、セラミック回路基板１Ａとパワー素子とが収納される筐体１０２と、筐体１０２内に充填されて、パワー素子を封止する封止樹脂１０７と、を備える。 (Power module)
In the present embodiment, the ceramic circuit board 1A described above constitutes a power module by mounting a power element. FIG. 3 is a cross-sectional view illustrating a configuration of a power module 100A that is an example of the second embodiment. The power module 100A includes the ceramic circuit board 1A, a power element (semiconductor element 6) mounted in the mounting area 3a, a casing 102 in which the ceramic circuit board 1A and the power element are stored, And a sealing resin 107 that seals the power element.
　本例のパワーモジュール１００Ａは、セラミック回路基板１に代えてセラミック回路基板１Ａを備えること以外は、第１実施形態の一例であるパワーモジュール１００と同様であるので、詳細な説明を省略する。 Since the power module 100A of this example is the same as the power module 100 as an example of the first embodiment except that the ceramic circuit board 1A is provided instead of the ceramic circuit board 1, detailed description thereof is omitted.
　パワーモジュール１００Ａに、セラミック回路基板１Ａを用いることで、封止樹脂１０７の接合強度および半導体素子６の接合強度を向上させることができ、高い信頼性を有するパワーモジュール１００Ａを実現できる。 By using the ceramic circuit board 1A for the power module 100A, the bonding strength of the sealing resin 107 and the bonding strength of the semiconductor element 6 can be improved, and the power module 100A having high reliability can be realized.
（発光装置）
　本実施形態では、上記のセラミック回路基板１Ａが、発光素子を搭載して発光装置を構成するものである。図４は、本実施形態の一例である発光装置２００Ａの構成を示す断面図である。発光装置２００Ａは、セラミック回路基板１Ａと、セラミック回路基板１Ａに搭載される発光素子（半導体素子６）と、発光素子を封止する封止樹脂２０７と、外部接続配線２０９と、を備える。 (Light emitting device)
In the present embodiment, the ceramic circuit board 1A described above constitutes a light emitting device by mounting a light emitting element. FIG. 4 is a cross-sectional view illustrating a configuration of a light emitting device 200A that is an example of the present embodiment. The light emitting device 200A includes a ceramic circuit board 1A, a light emitting element (semiconductor element 6) mounted on the ceramic circuit board 1A, a sealing resin 207 that seals the light emitting element, and an external connection wiring 209.
　本例の発光装置２００Ａは、セラミック回路基板１に代えてセラミック回路基板１Ａを備えること以外は、第１実施形態の一例である発光装置２００と同様であるので、詳細な説明を省略する。 The light-emitting device 200A of this example is the same as the light-emitting device 200 that is an example of the first embodiment except that the ceramic circuit substrate 1A is provided instead of the ceramic circuit substrate 1, and thus detailed description thereof is omitted.
　発光装置２００Ａに、セラミック回路基板１Ａを用いることで、封止樹脂２０７の接合強度および発光素子の接合強度を向上させることができ、高い信頼性を有する発光装置２００Ａを実現できる。 By using the ceramic circuit board 1A for the light emitting device 200A, the bonding strength of the sealing resin 207 and the bonding strength of the light emitting element can be improved, and the light emitting device 200A having high reliability can be realized.
　本発明は、その精神または主要な特徴から逸脱することなく、他のいろいろな形態で実施できる。したがって、前述の実施形態はあらゆる点で単なる例示に過ぎず、本発明の範囲は特許請求の範囲に示すものであって、明細書本文には何ら拘束されない。さらに、特許請求の範囲に属する変形や変更は全て本発明の範囲内のものである。 The present invention can be implemented in various other forms without departing from the spirit or main features thereof. Therefore, the above-described embodiment is merely an example in all respects, and the scope of the present invention is shown in the claims, and is not restricted by the text of the specification. Further, all modifications and changes belonging to the scope of the claims are within the scope of the present invention.
　１，１Ａ　　　セラミック回路基板
　２　　　セラミック基板
　３　　　導体層
　３ａ　　搭載領域
　４，４Ａ　　　金属皮膜
　５　　　接合材
　６　　　半導体素子
　１００，１００Ａ　パワーモジュール
　１０２　筐体
　１０３　リード端子
　１０４　枠体
　１０５　放熱板
　１０６　グリス
　１０７　封止樹脂
　１０８　冷却器
　２００，２００Ａ　発光装置
　２０７　封止樹脂
　２０９　外部接続配線
　Ｓ　　　内側空間 DESCRIPTION OF SYMBOLS 1,1A Ceramic circuit board 2 Ceramic board 3 Conductor layer 3a Mounting area 4, 4A Metal film 5 Bonding material 6 Semiconductor element 100, 100A Power module 102 Case 103 Lead terminal 104 Frame body 105 Heat sink 106 Grease 107 Sealing resin 108 Cooler 200, 200A Light emitting device 207 Sealing resin 209 External connection wiring S Inner space

Claims (5)

  1. 　セラミック基板と、
    　半導体素子が搭載される搭載領域を有する、前記セラミック基板の表面に配設された、Ｃｕからなる導体層と、
    　前記導体層の、少なくとも前記搭載領域以外の領域を被覆する金属皮膜であって、Ｉｒ、Ｒｈ、Ｐｄ、Ｐｔ、Ａｌ、Ｔｉ、Ｗ、ＴａおよびＮｂからなる群から選ばれる１種または２種以上を主成分とする材料からなる金属皮膜と、を備えることを特徴とするセラミック回路基板。     A ceramic substrate;
    A conductor layer made of Cu disposed on the surface of the ceramic substrate having a mounting region on which a semiconductor element is mounted;
    A metal film covering at least a region other than the mounting region of the conductor layer, and one or more selected from the group consisting of Ir, Rh, Pd, Pt, Al, Ti, W, Ta, and Nb A ceramic circuit board, comprising: a metal film made of a material containing as a main component.
  2. 　前記金属皮膜は、Ｉｒ、Ｒｈ、ＰｄおよびＰｔからなる群から選ばれる１種または２種以上を主成分とする材料からなることを特徴とする請求項１記載のセラミック回路基板。 2. The ceramic circuit board according to claim 1, wherein the metal film is made of a material mainly composed of one or more selected from the group consisting of Ir, Rh, Pd and Pt.
  3. 　前記金属皮膜は、Ｐｄを主成分とする材料からなることを特徴とする請求項１記載のセラミック回路基板。 2. The ceramic circuit board according to claim 1, wherein the metal film is made of a material mainly composed of Pd.
  4. 　請求項１～３のいずれか１つに記載のセラミック回路基板と、
    　前記搭載領域に搭載された半導体素子であるパワー素子と、
    　前記セラミック回路基板と前記パワー素子とが収納される筐体と、
    　前記筐体内に充填されて、前記パワー素子を封止する封止樹脂と、を備えることを特徴とするパワーモジュール。     A ceramic circuit board according to any one of claims 1 to 3,
    A power element that is a semiconductor element mounted in the mounting region;
    A housing that houses the ceramic circuit board and the power element;
    A power module comprising: a sealing resin that fills the housing and seals the power element.
  5. 　請求項１～３のいずれか１つに記載のセラミック回路基板と、
    　前記搭載領域に搭載された半導体素子である発光素子と、
    　前記発光素子を封止する封止樹脂と、を備えることを特徴とする発光装置。     A ceramic circuit board according to any one of claims 1 to 3,
    A light emitting element which is a semiconductor element mounted in the mounting region;
    And a sealing resin that seals the light emitting element.
PCT/JP2017/033853 2017-01-27 2017-09-20 Ceramic circuit substrate, power module, and light emission device WO2018138961A1 (en)

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