TW201828417A - Ceramic circuit substrate, power module, and light emission device - Google Patents

Ceramic circuit substrate, power module, and light emission device Download PDF

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TW201828417A
TW201828417A TW106132397A TW106132397A TW201828417A TW 201828417 A TW201828417 A TW 201828417A TW 106132397 A TW106132397 A TW 106132397A TW 106132397 A TW106132397 A TW 106132397A TW 201828417 A TW201828417 A TW 201828417A
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ceramic circuit
circuit board
conductor layer
light
metal film
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TW106132397A
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Chinese (zh)
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TWI651815B (en
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本多輝行
細井義博
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京瓷股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0239—Combinations of electrical or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

Abstract

The present invention pertains to a ceramic circuit substrate in which the strength of bonding with a sealing resin is enhanced, and a power module and a light emission device with which it is possible to achieve a high degree of reliability. The ceramic circuit substrate 1 is provided with a ceramic substrate 2, a conductor layer 3 made of Cu, and a metal coating 4 coating the conductor layer 3. The metal coating 4 is made of a material having, as the main component, one or more elements selected from the group consisting of Ir, Rh, Pd, Pt, Al, Ti, W, Ta, and Nb.

Description

陶瓷電路基板、電力模組及發光裝置Ceramic circuit substrate, power module and light emitting device

本發明係關於一種陶瓷電路基板、電力模組及發光裝置。The invention relates to a ceramic circuit substrate, a power module and a light-emitting device.

於陶瓷電路基板中，存在基於例如將電阻抑制得較低等理由而對信號配線等之導電體材料使用Cu(銅)之情形(例如，參照專利文獻1)。另一方面，搭載於陶瓷電路基板之表面之半導體元件係由樹脂材料密封以進行保護(例如，參照專利文獻2)。 [先前技術文獻] [專利文獻] [專利文獻1]國際公開第2015/114987號 [專利文獻2]日本專利特開平8-213547號公報In the ceramic circuit board, Cu (copper) is used for the conductor material such as the signal wiring, for example, because the resistance is kept low (for example, see Patent Document 1). On the other hand, the semiconductor element mounted on the surface of the ceramic circuit board is sealed by a resin material for protection (for example, see Patent Document 2). [Prior Art Document] [Patent Document 1] [Patent Document 1] International Publication No. 2015/114987 [Patent Document 2] Japanese Patent Laid-Open No. Hei 8-213547

本發明之陶瓷電路基板具備：陶瓷基板；由Cu構成之導體層，其具有供搭載半導體元件之搭載區域，配設於上述陶瓷基板之表面；及金屬皮膜，其被覆上述導體層之至少除上述搭載區域以外之區域。金屬皮膜包含以選自由Ir、Rh、Pd、Pt、Al、Ti、W、Ta及Nb所組成之群中之1種或2種以上為主成分的材料。 本發明之電力模組具備：上述之陶瓷電路基板；電力元件，其係搭載於上述搭載區域之半導體元件；殼體，其收納上述陶瓷電路基板與上述電力元件；及密封樹脂，其被填充至上述殼體內，而將上述電力元件密封。 本發明之發光裝置具備：上述之陶瓷電路基板；發光元件，其係搭載於上述搭載區域之半導體元件；及密封樹脂，其將上述發光元件密封。The ceramic circuit board of the present invention includes: a ceramic substrate; a conductor layer made of Cu, having a mounting region on which the semiconductor element is mounted, disposed on a surface of the ceramic substrate; and a metal film covering at least the conductor layer It is equipped with an area outside the area. The metal film contains a material selected from the group consisting of Ir, Rh, Pd, Pt, Al, Ti, W, Ta, and Nb as a main component. The power module of the present invention includes: the ceramic circuit board described above; a power element mounted on the semiconductor element in the mounting region; a case in which the ceramic circuit board and the power element are housed; and a sealing resin filled in The power element is sealed in the housing. The light-emitting device of the present invention includes: the ceramic circuit board described above; a light-emitting element mounted on the semiconductor element in the mounting region; and a sealing resin that seals the light-emitting element.

＜第1實施形態＞ (陶瓷電路基板) 第1實施形態之陶瓷電路基板1具備陶瓷基板2、由Cu構成之導體層3、及被覆導體層3之金屬皮膜4。 陶瓷基板2係由陶瓷燒結體構成且用以搭載如電力元件或發光元件之發熱量相對較多之半導體元件的基板。陶瓷基板2具有較高之機械強度及較高之傳熱特性(冷卻特性)等特性。作為陶瓷燒結體，可使用公知之材料。作為公知之材料，例如可使用氧化鋁(Al2 O3 )燒結體、氮化鋁(AlN)燒結體及氮化矽(Si3 N4 )燒結體等。 陶瓷基板2可藉由公知之製造方法而製造。公知之製造方法係例如可藉由於氧化鋁等原料粉末中添加燒結助劑使之成形為基板狀之後進行焙燒而製造。 本實施形態之導體層3係由Cu(銅)構成，於陶瓷基板2之至少一表面上呈例如配線狀等圖案形狀而配設。導體層3係利用例如接合線等連接構件而與所搭載之半導體元件電性連接。進而，導體層3係與外部之電路等電性連接，且於半導體元件與外部之電路之間進行電力之傳輸、控制信號之傳輸。 由於半導體元件與導體層3電性連接，故而導體層3之至少一部分配設於陶瓷基板2之與半導體元件之搭載面相同之面。如此一來，保護半導體元件之密封樹脂將由Cu構成之導體層3之一部分與半導體元件一起覆蓋。 於半導體元件之發熱相對較大之情形時，在導體層3之表面，氧化皮膜(氧化銅皮膜)生長而膜厚增加，從而變得容易產生氧化皮膜內之破壞。密封樹脂有時會於覆蓋導體層3之部分因皮膜內破壞而接合強度降低。 導體層3可藉由印刷塗佈包含Cu粉末與黏合劑樹脂等之漿料並與陶瓷基板2同時焙燒形成金屬化層而形成。或者，導體層3可藉由於陶瓷基板2上接合Cu箔(Cu板)或於陶瓷基板2上形成Cu之鍍覆覆膜而形成。於印刷塗佈漿料之情形時，只要預先以應形成之圖案形狀進行印刷塗佈即可。於使用Cu箔(Cu板)之情形時，只要於整面接合後藉由蝕刻等進行圖案形成即可。於形成鍍覆覆膜之情形時，可利用薄膜或金屬化層形成底層，並以電解鍍覆形成或使用遮罩以無電解鍍覆形成。 於導體層3，設置有用以經由包含例如Ag之接合材5而搭載半導體元件6之搭載區域3a。本實施形態中，金屬皮膜4被覆導體層3之露出部分中之除搭載區域3a以外之部分。導體層3之除搭載區域3a以外之部分先前係密封樹脂與導體層3直接接觸而接合之部分，且係形成有氧化銅之皮膜之部分。本實施形態中係將該部分利用包含以特定之金屬種類為主成分之材料之金屬皮膜4被覆。再者，金屬皮膜4只要被覆至少除搭載區域3a以外之部分即可，既可為如本實施形態般不被覆搭載區域3a之構成，亦可為如下述之第2實施形態般亦被覆搭載區域3a之構成。 金屬皮膜4包含以選自由Ir、Rh、Pd、Pt、Al、Ti、W、Ta及Nb所組成之群中之1種或2種以上為主成分的材料。金屬皮膜4亦可為包含以選自由Ir、Rh、Pd及Pt所組成之群中之1種或2種以上為主成分的材料者。金屬皮膜4還可為包含以Pd為主成分之材料者。 於本實施形態中，所謂主成分係構成金屬皮膜4之材料中占90質量%以上之材料。本實施形態中，作為構成金屬皮膜4之材料，除主成分以外，亦可含有例如P(磷)、B(硼)等。 金屬皮膜4由於主成分為選自由Ir、Rh、Pd、Pt、Al、Ti、W、Ta及Nb所組成之群中之一種，故而於因所搭載之半導體元件6之發熱而成為高溫狀態之情形時，於金屬皮膜4之表面形成厚度相對較薄之作為氧化膜之鈍態膜，基本不存在膜生長(厚度不會增加)。進而，該較薄之鈍態膜係藉由與密封樹脂之氫鍵結而牢固地接合。 又，由Cu構成之導體層3被金屬皮膜4被覆，因此即便成為高溫狀態，亦不會產生Cu之氧化，從而不會於表面形成會成為接合強度降低之原因之氧化銅皮膜。因此，本實施形態之陶瓷電路基板1中，即便於搭載有半導體元件6且被予以樹脂密封之情形時，亦可提高陶瓷電路基板1與密封樹脂之接合強度。 分別準備不同之處僅在於金屬皮膜4之有無之陶瓷電路基板，進行樹脂密封之後，藉由拉伸試驗而測定密封樹脂之拉伸強度。設置有金屬皮膜4之本實施形態之陶瓷電路基板1與未設置有金屬皮膜4之陶瓷電路基板相比，顯示出約2倍之拉伸強度。 金屬皮膜4只要能夠被覆導體層3之除搭載區域3a以外之部分，則用任何方法形成均可。例如，藉由濺鍍、蒸鍍等薄膜形成法、無電解鍍覆、電解鍍覆等鍍覆法於導體層3上形成皮膜即可。金屬皮膜4於包含以選自由Ir、Rh、Pd、Pt、Al、Ti、W、Ta及Nb之中的Ir、Rh、Pd及Pt所組成之群中之1種或2種以上為主成分之材料的情形時，容易藉由與蒸鍍等相比為低成本且量產性優異之鍍覆法而形成。其等之中，尤其於包含以Pd為主成分之材料之情形時，藉由使用鍍覆法，能夠以更低之成本形成。又，金屬皮膜4可直接被覆由Cu構成之導體層3，亦可於與導體層3之間設置例如由Ni等構成之底層。 陶瓷基板2、導體層3及金屬皮膜4只要根據所要搭載之半導體元件之種類、陶瓷電路基板1所要組入之裝置之種類等，並按照所要求之特性，而適當設定其形狀、及厚度、寬度等尺寸即可。 作為一例，陶瓷基板2可為矩形板狀，且縱為2～60 mm，橫為2～60 mm，厚度為0.2～1.0 mm。導體層3可為預先確定之圖案形狀，且厚度為0.01～4.0 mm。金屬皮膜4可為與導體層3大致相同之形狀，且厚度為0.05～0.5 μm。 用以將半導體元件6接合於導體層3之接合材5可作為釺料而塗佈於搭載區域3a之導體層3表面或金屬皮膜4表面。接合材5可使用遮罩等僅在搭載區域3a之導體層3表面或金屬皮膜4表面作為利用電解鍍覆形成之鍍覆層而形成。接合材5亦可於導體層3表面或金屬皮膜4表面之整體形成利用電解鍍覆形成之鍍覆層之後，以保留搭載區域3a之部分之方式進行蝕刻。 (電力模組) 本實施形態中，上述之陶瓷電路基板1係搭載電力元件作為半導體元件6而構成電力模組者。本實施形態之電力模組具備：上述之陶瓷電路基板1、搭載於搭載區域3a之電力元件、收納陶瓷電路基板1與電力元件之殼體、及被填充至殼體內而將電力元件密封之密封樹脂。 圖1係表示作為第1實施形態之一例之電力模組100之構成的剖視圖。本例之電力模組100具備：殼體102，其具有內側空間S；引線端子103，其自內側空間S貫通殼體102而向外部導出；陶瓷電路基板1，其搭載有作為電力元件之半導體元件6；及密封樹脂107，其被填充至內側空間S。本例中，殼體102係由框體104、及封堵框體104之一開口之散熱板105所構成。由框體104與散熱板105所包圍之空間成為內側空間S。引線端子103貫通框體104。 電力模組100例如用於汽車等，使用於ECU(engine control unit，引擎控制單元)及動力輔助把手、馬達驅動器等各種控制單元。電力元件於此種控制單元中係用於進行電力控制之半導體元件。 陶瓷電路基板1例如為如下者：於陶瓷基板2利用包含活性金屬之活性釺料接合由厚度為0.3 mm～0.8 mm之Cu板構成之導體層3，且於導體層3之表面藉由無電解鍍覆形成以厚度為0.5 μm～8 μm之Ni為底層的厚度為0.05 μm～0.5 μm之Pd之金屬皮膜。 框體104係由樹脂材料、金屬材料或其等之混合材料構成，且由散熱板105封堵一開口而形成收納陶瓷電路基板1之內側空間S。作為框體104所用之材料，就散熱性、耐熱性、耐環境性及輕量性方面而言，可使用銅、鋁等金屬材料或聚對苯二甲酸丁二酯(PBT)、聚苯硫醚(PPS)等樹脂材料。其等之中，尤其PBT樹脂更易取得。又，PBT樹脂可為了增大機械強度而添加玻璃纖維以製成纖維強化樹脂。 引線端子103係以自內側空間S貫通框體104向外部導出之方式安裝的導電性之端子。該引線端子103之內側空間S側之端部係與陶瓷電路基板1之導體層3電性連接。引線端子103之外部側之端部係與外部之電子電路(未圖示)或電源裝置(未圖示)等電性連接。該引線端子103所用之各種金屬材料可使用例如Cu及Cu合金、Al及Al合金、Fe及Fe合金、不鏽鋼(SUS)等。 散熱板105係用以將動作時於電力元件產生之熱散發至電力模組100之外部者。該散熱板105可使用Al、Cu、Cu-W等高熱導性材料。尤其，Al與Fe等作為一般結構材料之金屬材料相比，熱導性較高。Al能夠將於電力元件產生之熱更有效率地散發至電力模組100之外部，因此能夠使電力元件穩定且正常地動作。又，Al與Cu或Cu-W等其他高熱導性材料相比較，容易取得且價格低廉，因此亦有利於電力模組100之低成本化。 散熱板105與陶瓷電路基板1既可利用釺料等牢固地接合，亦可利用滑酯等接合，進而，還可如下所述般利用密封樹脂107接合。 密封樹脂107係被填充至內側空間S以用於將搭載於陶瓷電路基板1之電力元件密封而予以保護者。可將陶瓷電路基板1與散熱板105之接合以及內側空間S之密封利用相同之密封樹脂107進行。於該情形時，能夠將陶瓷電路基板1與散熱板105之接合、及樹脂密封於同一步驟中進行。 對於密封樹脂107，就熱導性、絕緣性、耐環境性及密封性方面而言，可使用聚矽氧樹脂、環氧樹脂、酚樹脂等熱固性樹脂。 電力模組100亦可為了進一步提高散熱特性，而於散熱板105之與接合有陶瓷電路基板1之側相反之側之露出面，經由滑酯106等接合冷卻片等冷卻器108。 藉由對電力模組100使用陶瓷電路基板1，能夠提高密封樹脂107之接合強度，從而能夠實現具有較高之可靠性之電力模組100。 (發光裝置) 本實施形態中，上述之陶瓷電路基板1係搭載發光元件作為半導體元件6而構成發光裝置者。本實施形態之發光裝置具備上述之陶瓷電路基板1、搭載於搭載區域3a之發光元件、及將發光元件密封之密封樹脂。 圖2係表示作為本實施形態之一例之發光裝置200之構成的剖視圖。本例之發光裝置200具備陶瓷電路基板1、搭載於陶瓷電路基板1之發光元件即半導體元件6、將發光元件密封之密封樹脂207、及外部連接配線209。 發光元件係LED(發光二極體)或LD(半導體雷射)等將光出射之半導體元件。密封樹脂207保護發光元件及導體層3、金屬皮膜4。密封樹脂207亦可具有將發光元件所產生之熱吸收及發散之功能、出射藉由包含螢光物質等而被自發光元件出射之光激發之螢光的波長轉換功能。密封樹脂207亦可藉由如本實施形態般形成為曲面狀而具有使出射之光聚焦或發散之光學透鏡功能等。密封樹脂207可使用例如聚矽氧樹脂、丙烯酸系樹脂、環氧樹脂等使自發光元件出射之光透過之透光性樹脂。陶瓷電路基板1之陶瓷基板2係具有凹部者，可於凹部底面之搭載區域3a搭載發光元件，且密封樹脂207覆蓋發光元件及導體層3、金屬皮膜4而填充至凹部內。 本例中，陶瓷電路基板1例如為如下者：於陶瓷基板2利用電解鍍覆形成由以薄膜形成底層且厚度為0.1 m～0.5 m之Cu構成之導體層3，並於導體層3之表面利用電解鍍覆形成以厚度為0.5 μm～8 μm之Ni為底層的厚度為0.05 μm～0.5 μm之Pd之金屬皮膜4。又，陶瓷電路基板1為了與外部之電路等進行連接而具備外部連接配線209。外部連接配線209例如可將於厚度方向貫通陶瓷基板2而與導體層3連接之貫通導體、或連接於貫通導體之連接墊等適當組合。 藉由對發光裝置200使用陶瓷電路基板1，能夠提高密封樹脂207之接合強度，從而能夠實現具有較高之可靠性之發光裝置200。 ＜第2實施形態＞ (陶瓷電路基板) 第2實施形態之陶瓷電路基板1A具備陶瓷基板2、由Cu構成之導體層3、及被覆導體層3之金屬皮膜4A。 第2實施形態之陶瓷電路基板1A係除金屬皮膜4A之構成不同以外，與第1實施形態之陶瓷電路基板1相同，因此，以下對金屬皮膜4A進行說明，對於其他構成則省略詳細說明。 如上所述，第1實施形態之金屬皮膜4被覆導體層3之露出部分中之除搭載區域3a以外之部分。相對於此，本實施形態之金屬皮膜4A亦被覆搭載區域3a。即，本實施形態之金屬皮膜4A被覆導體層3之露出部分之整體。 半導體元件6經由包含Ag之接合材5而搭載於導體層3。包含Ag之接合材5具有氧透過性，於導體層3之表面，氧化皮膜(氧化銅皮膜)生長而膜厚增加，從而不易產生氧化皮膜內之破壞。接合材5有時於覆蓋導體層3之搭載區域3a亦會因皮膜內破壞而導致接合強度降低。 本實施形態中，藉由金屬皮膜4A亦被覆搭載區域3a，而使接合材5不與導體層3接合，而與金屬皮膜4A接合。藉此，不會產生搭載區域3a之Cu之氧化，故不會於表面形成會成為接合強度降低之原因之氧化銅皮膜。因此，本實施形態之陶瓷電路基板1A中，除了能夠提高陶瓷電路基板1與密封樹脂之接合強度，亦能夠提高陶瓷電路基板1A與半導體元件6之接合強度。 (電力模組) 本實施形態中，上述之陶瓷電路基板1A係搭載電力元件而構成電力模組者。圖3係表示作為第2實施形態之一例之電力模組100A之構成的剖視圖。電力模組100A具備：上述之陶瓷電路基板1A、搭載於搭載區域3a之電力元件(半導體元件6)、收納陶瓷電路基板1A與電力元件之殼體102、及被填充至殼體102內而將電力元件密封之密封樹脂107。 本例之電力模組100A除具備陶瓷電路基板1A以代替陶瓷電路基板1以外，與作為第1實施形態之一例之電力模組100相同，因此省略詳細說明。 藉由對電力模組100A使用陶瓷電路基板1A，能夠提高密封樹脂107之接合強度及半導體元件6之接合強度，從而能夠實現具有較高之可靠性之電力模組100A。 (發光裝置) 本實施形態中，上述之陶瓷電路基板1A係搭載發光元件而構成發光裝置者。圖4係表示作為本實施形態之一例之發光裝置200A之構成的剖視圖。發光裝置200A具備陶瓷電路基板1A、搭載於陶瓷電路基板1A之發光元件(半導體元件6)、將發光元件密封之密封樹脂207、及外部連接配線209。 本例之發光裝置200A除具備陶瓷電路基板1A以代替陶瓷電路基板1以外，與作為第1實施形態之一例之發光裝置200相同，因此省略詳細說明。 藉由對發光裝置200A使用陶瓷電路基板1A，能夠提高密封樹脂207之接合強度及發光元件之接合強度，從而能夠實現具有較高之可靠性之發光裝置200A。 本發明只要不脫離其精神或主要特徵則能以其他各種形態來實施。因此，上述之實施形態所有內容僅為例示，本發明之範圍係申請專利範圍所示者，並不受說明書本文任何約束。進而，屬於申請專利範圍之變化或變更均為本發明之範圍內者。<First embodiment> (ceramic circuit board) The ceramic circuit board 1 of the first embodiment includes a ceramic substrate 2, a conductor layer 3 made of Cu, and a metal film 4 covering the conductor layer 3. The ceramic substrate 2 is a substrate made of a ceramic sintered body and mounted with a semiconductor element having a relatively large amount of heat generation of a power element or a light-emitting element. The ceramic substrate 2 has characteristics such as high mechanical strength and high heat transfer characteristics (cooling characteristics). As the ceramic sintered body, a known material can be used. As a known material, for example, an alumina (Al 2 O 3 ) sintered body, an aluminum nitride (AlN) sintered body, a tantalum nitride (Si 3 N 4 ) sintered body, or the like can be used. The ceramic substrate 2 can be produced by a known manufacturing method. A known production method can be produced, for example, by adding a sintering aid to a raw material powder such as alumina to form a substrate, followed by baking. The conductor layer 3 of the present embodiment is made of Cu (copper), and is disposed on at least one surface of the ceramic substrate 2 in a pattern shape such as a wiring. The conductor layer 3 is electrically connected to the mounted semiconductor element by a connection member such as a bonding wire. Further, the conductor layer 3 is electrically connected to an external circuit, and transmits power and control signals between the semiconductor element and an external circuit. Since the semiconductor element is electrically connected to the conductor layer 3, at least a part of the conductor layer 3 is disposed on the same surface of the ceramic substrate 2 as the mounting surface of the semiconductor element. As a result, the sealing resin protecting the semiconductor element covers a portion of the conductor layer 3 made of Cu together with the semiconductor element. When the heat generation of the semiconductor element is relatively large, the oxide film (copper oxide film) grows on the surface of the conductor layer 3, and the film thickness increases, so that destruction in the oxide film is likely to occur. The sealing resin may be damaged in the portion of the covering conductor layer 3 due to breakage in the film. The conductor layer 3 can be formed by printing a paste containing a Cu powder and a binder resin or the like and baking it simultaneously with the ceramic substrate 2 to form a metallized layer. Alternatively, the conductor layer 3 may be formed by bonding a Cu foil (Cu plate) on the ceramic substrate 2 or forming a Cu plating film on the ceramic substrate 2. In the case of printing a coating slurry, it is only necessary to perform printing coating in advance in a pattern shape to be formed. In the case of using a Cu foil (Cu plate), patterning may be performed by etching or the like after bonding over the entire surface. In the case of forming a plating film, a film or a metallization layer may be used to form a bottom layer, which is formed by electrolytic plating or formed by electroless plating using a mask. In the conductor layer 3, a mounting region 3a for mounting the semiconductor element 6 via a bonding material 5 containing, for example, Ag is provided. In the present embodiment, the metal film 4 covers a portion other than the mounting region 3a of the exposed portion of the conductor layer 3. A portion of the conductor layer 3 excluding the mounting region 3a is a portion where the sealing resin is directly in contact with the conductor layer 3 and is joined, and a portion of the film of copper oxide is formed. In the present embodiment, the portion is covered with a metal film 4 containing a material having a specific metal species as a main component. In addition, the metal film 4 may be provided with a portion other than the mounting region 3a, and may be configured to cover the mounting region 3a as in the present embodiment, or may be covered as in the second embodiment described below. The composition of 3a. The metal film 4 contains one or more selected from the group consisting of Ir, Rh, Pd, Pt, Al, Ti, W, Ta, and Nb as a main component. The metal film 4 may be one containing one or two or more selected from the group consisting of Ir, Rh, Pd, and Pt as a main component. The metal film 4 may also be a material containing Pd as a main component. In the present embodiment, the main component is a material which constitutes 90% by mass or more of the material of the metal film 4. In the present embodiment, the material constituting the metal film 4 may contain, for example, P (phosphorus) or B (boron) in addition to the main component. The metal film 4 has a main component selected from the group consisting of Ir, Rh, Pd, Pt, Al, Ti, W, Ta, and Nb, and thus becomes a high temperature state due to heat generation of the mounted semiconductor element 6. In the case, a passive film which is a relatively thin film as an oxide film is formed on the surface of the metal film 4, and there is substantially no film growth (thickness does not increase). Further, the thin passive film is firmly bonded by hydrogen bonding with the sealing resin. Further, since the conductor layer 3 made of Cu is covered with the metal film 4, even if it is in a high temperature state, oxidation of Cu does not occur, and a copper oxide film which causes a decrease in bonding strength is not formed on the surface. Therefore, in the ceramic circuit board 1 of the present embodiment, even when the semiconductor element 6 is mounted and resin-sealed, the bonding strength between the ceramic circuit board 1 and the sealing resin can be improved. A ceramic circuit board having a difference in the presence or absence of the metal film 4 was prepared, and after the resin sealing, the tensile strength of the sealing resin was measured by a tensile test. The ceramic circuit board 1 of the present embodiment in which the metal film 4 is provided exhibits about twice the tensile strength as compared with the ceramic circuit board on which the metal film 4 is not provided. The metal film 4 may be formed by any method as long as it can cover a portion other than the mounting region 3a of the conductor layer 3. For example, a film may be formed on the conductor layer 3 by a plating method such as sputtering, vapor deposition or the like, electroless plating or electrolytic plating. The metal film 4 contains one or more of a group consisting of Ir, Rh, Pd, and Pt selected from the group consisting of Ir, Rh, Pd, Pt, Al, Ti, W, Ta, and Nb as a main component. In the case of the material, it is easy to form by a plating method which is low in cost and excellent in mass productivity compared with vapor deposition or the like. Among them, in particular, when a material containing Pd as a main component is contained, it can be formed at a lower cost by using a plating method. Further, the metal film 4 may be directly coated with the conductor layer 3 made of Cu, or a bottom layer made of, for example, Ni or the like may be provided between the metal film and the conductor layer 3. The ceramic substrate 2, the conductor layer 3, and the metal film 4 are appropriately set in shape, thickness, and thickness according to the type of the semiconductor device to be mounted, the type of the device to be incorporated in the ceramic circuit board 1, and the like. The width and other dimensions can be used. As an example, the ceramic substrate 2 may have a rectangular plate shape and have a longitudinal direction of 2 to 60 mm, a lateral width of 2 to 60 mm, and a thickness of 0.2 to 1.0 mm. The conductor layer 3 may have a predetermined pattern shape and has a thickness of 0.01 to 4.0 mm. The metal film 4 may have substantially the same shape as the conductor layer 3 and has a thickness of 0.05 to 0.5 μm. The bonding material 5 for bonding the semiconductor element 6 to the conductor layer 3 can be applied as a coating to the surface of the conductor layer 3 of the mounting region 3a or the surface of the metal film 4. The bonding material 5 can be formed only on the surface of the conductor layer 3 of the mounting region 3a or the surface of the metal film 4 as a plating layer formed by electrolytic plating using a mask or the like. The bonding material 5 may be formed by forming a plating layer formed by electrolytic plating on the surface of the conductor layer 3 or the entire surface of the metal film 4, and then etching the portion of the mounting region 3a. (Power Module) In the present embodiment, the ceramic circuit board 1 described above is mounted with a power element as the semiconductor element 6 to constitute a power module. The power module of the present embodiment includes the above-described ceramic circuit board 1 , a power element mounted on the mounting region 3 a , a case in which the ceramic circuit board 1 and the power element are housed, and a case in which the power element is sealed by being filled in the case. Resin. Fig. 1 is a cross-sectional view showing a configuration of a power module 100 as an example of the first embodiment. The power module 100 of the present example includes a casing 102 having an inner space S, and a lead terminal 103 that passes through the casing 102 from the inner space S and is led out to the outside. The ceramic circuit board 1 is mounted with a semiconductor as a power component. The element 6; and the sealing resin 107 are filled into the inner space S. In this example, the casing 102 is composed of a casing 104 and a heat dissipation plate 105 that is open to one of the sealing frames 104. The space surrounded by the frame 104 and the heat sink 105 becomes the inner space S. The lead terminal 103 penetrates the frame 104. The power module 100 is used, for example, in an automobile or the like, and is used in various control units such as an ECU (engine control unit), a power assist handle, and a motor driver. The power component is used in such a control unit for a semiconductor component for power control. The ceramic circuit board 1 is, for example, a conductor layer 3 made of a Cu plate having a thickness of 0.3 mm to 0.8 mm bonded to the ceramic substrate 2 by an active material containing an active metal, and electroless on the surface of the conductor layer 3 A metal film of Pd having a thickness of 0.05 μm to 0.5 μm having a thickness of 0.5 μm to 8 μm as a base layer is formed by plating. The casing 104 is made of a resin material, a metal material, or the like, and is sealed by an opening 107 to form an inner space S in which the ceramic circuit board 1 is housed. As a material used for the frame 104, a metal material such as copper or aluminum or polybutylene terephthalate (PBT) or polyphenylene sulfide can be used in terms of heat dissipation, heat resistance, environmental resistance, and lightness. Resin material such as ether (PPS). Among them, PBT resin is especially easy to obtain. Further, the PBT resin may be a fiber-reinforced resin by adding glass fibers in order to increase mechanical strength. The lead terminal 103 is a conductive terminal that is attached to the outside from the inner space S through the frame 104. The end portion of the lead terminal 103 on the inner space S side is electrically connected to the conductor layer 3 of the ceramic circuit board 1. The end portion on the outer side of the lead terminal 103 is electrically connected to an external electronic circuit (not shown) or a power supply device (not shown). As the metal material used for the lead terminal 103, for example, Cu and a Cu alloy, Al and an Al alloy, Fe and Fe alloy, stainless steel (SUS) or the like can be used. The heat sink 105 is used to dissipate heat generated by the power components during operation to the outside of the power module 100. The heat dissipation plate 105 can use a highly thermally conductive material such as Al, Cu, or Cu-W. In particular, Al has a higher thermal conductivity than a metal material such as Fe as a general structural material. Since Al can radiate heat generated by the power element more efficiently to the outside of the power module 100, the power element can be stably and normally operated. Further, since Al is easily available and inexpensive compared with other high thermal conductivity materials such as Cu or Cu-W, it is also advantageous in reducing the cost of the power module 100. The heat dissipation plate 105 and the ceramic circuit board 1 can be firmly joined by a material such as a crucible or the like, or joined by a slip ester or the like, and further joined by a sealing resin 107 as described below. The sealing resin 107 is filled in the inner space S for sealing and protecting the electric component mounted on the ceramic circuit board 1. The joining of the ceramic circuit board 1 and the heat sink 105 and the sealing of the inner space S can be performed by the same sealing resin 107. In this case, bonding of the ceramic circuit board 1 and the heat dissipation plate 105 and resin sealing can be performed in the same step. For the sealing resin 107, a thermosetting resin such as a polyoxyxylene resin, an epoxy resin, or a phenol resin can be used in terms of thermal conductivity, insulation properties, environmental resistance, and sealing properties. In order to further improve the heat dissipation characteristics, the power module 100 may be connected to the cooler 108 such as a cooling fin via the slip ester 106 or the like on the exposed surface of the heat sink 105 opposite to the side on which the ceramic circuit board 1 is bonded. By using the ceramic circuit board 1 for the power module 100, the bonding strength of the sealing resin 107 can be improved, and the power module 100 having high reliability can be realized. (Light-emitting device) In the present embodiment, the ceramic circuit board 1 described above is a light-emitting device in which a light-emitting element is mounted as the semiconductor element 6. The light-emitting device of the present embodiment includes the ceramic circuit board 1 described above, a light-emitting element mounted on the mounting region 3a, and a sealing resin that seals the light-emitting element. Fig. 2 is a cross-sectional view showing a configuration of a light-emitting device 200 as an example of the embodiment. The light-emitting device 200 of the present embodiment includes a ceramic circuit board 1, a semiconductor element 6 that is a light-emitting element mounted on the ceramic circuit board 1, a sealing resin 207 that seals the light-emitting element, and an external connection wiring 209. The light-emitting element is a semiconductor element that emits light such as an LED (Light Emitting Diode) or an LD (Semiconductor Laser). The sealing resin 207 protects the light-emitting element, the conductor layer 3, and the metal film 4. The sealing resin 207 may have a function of absorbing and diffusing heat generated by the light-emitting element, and a wavelength conversion function of emitting fluorescence that is excited by light emitted from the light-emitting element, including a fluorescent material. The sealing resin 207 can also be formed into a curved shape as in the present embodiment, and has an optical lens function of focusing or diverging the emitted light. As the sealing resin 207, for example, a light-transmitting resin that transmits light emitted from the light-emitting element, such as a polyoxyn resin, an acrylic resin, or an epoxy resin, can be used. In the ceramic substrate 2 of the ceramic circuit board 1 having a concave portion, the light-emitting element can be mounted on the mounting region 3a of the bottom surface of the concave portion, and the sealing resin 207 covers the light-emitting element, the conductor layer 3, and the metal film 4, and is filled in the concave portion. In the present embodiment, the ceramic circuit board 1 is, for example, a conductor layer 3 made of Cu which is formed of a thin film and has a thickness of 0.1 m to 0.5 m on the ceramic substrate 2, and is formed on the surface of the conductor layer 3 by electrolytic plating. A metal film 4 of Pd having a thickness of 0.05 μm to 0.5 μm having a thickness of 0.5 μm to 8 μm as a base layer is formed by electrolytic plating. Moreover, the ceramic circuit board 1 is provided with an external connection wiring 209 in order to connect to an external circuit or the like. The external connection wiring 209 can be appropriately combined, for example, by a through conductor that penetrates the ceramic substrate 2 in the thickness direction, is connected to the conductor layer 3, or a connection pad that is connected to the through conductor. By using the ceramic circuit board 1 for the light-emitting device 200, the bonding strength of the sealing resin 207 can be improved, and the light-emitting device 200 having high reliability can be realized. <Second Embodiment> (Ceramic circuit board) The ceramic circuit board 1A of the second embodiment includes a ceramic board 2, a conductor layer 3 made of Cu, and a metal film 4A covering the conductor layer 3. The ceramic circuit board 1A of the second embodiment is the same as the ceramic circuit board 1 of the first embodiment except for the difference in the configuration of the metal film 4A. Therefore, the metal film 4A will be described below, and the detailed description thereof will be omitted. As described above, the metal film 4 of the first embodiment covers a portion other than the mounting region 3a of the exposed portion of the conductor layer 3. On the other hand, the metal film 4A of the present embodiment also covers the mounting region 3a. That is, the metal film 4A of the present embodiment covers the entire exposed portion of the conductor layer 3. The semiconductor element 6 is mounted on the conductor layer 3 via the bonding material 5 containing Ag. The bonding material 5 containing Ag has oxygen permeability, and the oxide film (copper oxide film) grows on the surface of the conductor layer 3, and the film thickness increases, so that damage in the oxide film is less likely to occur. In the bonding material 5 in the mounting region 3a covering the conductor layer 3, the bonding strength may be lowered due to breakage in the film. In the present embodiment, the metal film 4A is also covered with the mounting region 3a, and the bonding material 5 is bonded to the metal film 4A without being bonded to the conductor layer 3. Thereby, oxidation of Cu in the mounting region 3a does not occur, so that a copper oxide film which causes a decrease in bonding strength is not formed on the surface. Therefore, in the ceramic circuit board 1A of the present embodiment, the bonding strength between the ceramic circuit board 1 and the sealing resin can be improved, and the bonding strength between the ceramic circuit board 1A and the semiconductor element 6 can be improved. (Power Module) In the present embodiment, the ceramic circuit board 1A described above is mounted with a power element to constitute a power module. Fig. 3 is a cross-sectional view showing the configuration of a power module 100A as an example of the second embodiment. The power module 100A includes the above-described ceramic circuit board 1A, a power element (semiconductor element 6) mounted on the mounting region 3a, a case 102 that houses the ceramic circuit board 1A and the power element, and is filled in the case 102. The sealing element 107 of the power component sealing. The power module 100A of the present embodiment is the same as the power module 100 as an example of the first embodiment except that the ceramic circuit board 1A is provided instead of the ceramic circuit board 1. Therefore, detailed description thereof will be omitted. By using the ceramic circuit board 1A for the power module 100A, the bonding strength of the sealing resin 107 and the bonding strength of the semiconductor element 6 can be improved, and the power module 100A having high reliability can be realized. (Light-emitting device) In the present embodiment, the above-described ceramic circuit board 1A is provided with a light-emitting element to constitute a light-emitting device. Fig. 4 is a cross-sectional view showing a configuration of a light-emitting device 200A as an example of the embodiment. The light-emitting device 200A includes a ceramic circuit board 1A, a light-emitting element (semiconductor element 6) mounted on the ceramic circuit board 1A, a sealing resin 207 that seals the light-emitting element, and an external connection wiring 209. The illuminating device 200A of the present embodiment is the same as the illuminating device 200 as an example of the first embodiment except that the ceramic circuit board 1A is provided instead of the ceramic circuit board 1. Therefore, detailed description thereof will be omitted. By using the ceramic circuit board 1A for the light-emitting device 200A, the bonding strength of the sealing resin 207 and the bonding strength of the light-emitting elements can be improved, and the light-emitting device 200A having high reliability can be realized. The present invention can be embodied in other various forms without departing from the spirit or essential characteristics thereof. Therefore, the above-described embodiments are merely illustrative, and the scope of the present invention is not limited by the scope of the specification. Further, variations or modifications belonging to the scope of the invention are within the scope of the invention.

1‧‧‧陶瓷電路基板1‧‧‧ceramic circuit substrate

1A‧‧‧陶瓷電路基板1A‧‧‧ceramic circuit substrate

2‧‧‧陶瓷基板2‧‧‧ceramic substrate

3‧‧‧導體層3‧‧‧Conductor layer

3a‧‧‧搭載區域3a‧‧‧Loading area

4‧‧‧金屬皮膜4‧‧‧Metal film

4A‧‧‧金屬皮膜4A‧‧‧metal film

5‧‧‧接合材5‧‧‧Material

6‧‧‧半導體元件6‧‧‧Semiconductor components

100‧‧‧電力模組100‧‧‧Power Module

100A‧‧‧電力模組100A‧‧‧Power Module

102‧‧‧殼體102‧‧‧ housing

103‧‧‧引線端子103‧‧‧Lead terminal

104‧‧‧框體104‧‧‧ frame

105‧‧‧散熱板105‧‧‧heat plate

106‧‧‧滑酯106‧‧‧Slip ester

107‧‧‧密封樹脂107‧‧‧ Sealing resin

108‧‧‧冷卻器108‧‧‧cooler

200‧‧‧發光裝置200‧‧‧Lighting device

200A‧‧‧發光裝置200A‧‧‧Lighting device

207‧‧‧密封樹脂207‧‧‧ sealing resin

209‧‧‧外部連接配線209‧‧‧External connection wiring

S‧‧‧內側空間S‧‧‧ inside space

本發明之目的、特色、及優點應當會根據下述之詳細說明與圖式而變得更明確。 圖1係表示作為第1實施形態之一例之電力模組之構成的剖視圖。 圖2係表示作為第1實施形態之一例之發光裝置之構成的剖視圖。 圖3係表示作為第2實施形態之一例之電力模組之構成的剖視圖。 圖4係表示作為第2實施形態之一例之發光裝置之構成的剖視圖。The objects, features, and advantages of the invention will be apparent from the description and drawings. Fig. 1 is a cross-sectional view showing the configuration of a power module as an example of the first embodiment. Fig. 2 is a cross-sectional view showing a configuration of a light-emitting device which is an example of the first embodiment. Fig. 3 is a cross-sectional view showing the configuration of a power module as an example of the second embodiment. Fig. 4 is a cross-sectional view showing a configuration of a light-emitting device which is an example of the second embodiment.

Claims (5)

一種陶瓷電路基板，其特徵在於具備：陶瓷基板； 由Cu構成之導體層，其具有供搭載半導體元件之搭載區域，配設於上述陶瓷基板之表面；及 金屬皮膜，其被覆上述導體層之至少除上述搭載區域以外之區域，且包含以選自由Ir、Rh、Pd、Pt、Al、Ti、W、Ta及Nb所組成之群中之1種或2種以上為主成分的材料。A ceramic circuit board comprising: a ceramic substrate; a conductor layer made of Cu, having a mounting region on which the semiconductor element is mounted, disposed on a surface of the ceramic substrate; and a metal film covering at least the conductor layer A region other than the above-described mounting region includes one or more selected from the group consisting of Ir, Rh, Pd, Pt, Al, Ti, W, Ta, and Nb as a main component. 如請求項1之陶瓷電路基板，其中上述金屬皮膜包含以選自由Ir、Rh、Pd及Pt所組成之群中之1種或2種以上為主成分的材料。The ceramic circuit board according to claim 1, wherein the metal film contains one or more selected from the group consisting of Ir, Rh, Pd, and Pt as a main component. 如請求項1之陶瓷電路基板，其中上述金屬皮膜包含以Pd為主成分之材料。The ceramic circuit substrate of claim 1, wherein the metal film comprises a material mainly composed of Pd. 一種電力模組，其特徵在於具備：如請求項1至3中任一項之陶瓷電路基板； 電力元件，其係搭載於上述搭載區域之半導體元件； 殼體，其收納上述陶瓷電路基板與上述電力元件；及 密封樹脂，其被填充至上述殼體內，而將上述電力元件密封。A power module comprising: the ceramic circuit board according to any one of claims 1 to 3; a power element mounted on the semiconductor element in the mounting region; and a case accommodating the ceramic circuit board and the a power component; and a sealing resin that is filled into the housing to seal the power component. 一種發光裝置，其特徵在於具備：如請求項1至3中任一項之陶瓷電路基板； 發光元件，其係搭載於上述搭載區域之半導體元件；及 密封樹脂，其將上述發光元件密封。A light-emitting device comprising: the ceramic circuit substrate according to any one of claims 1 to 3; a light-emitting element mounted on the semiconductor element in the mounting region; and a sealing resin that seals the light-emitting element.
TW106132397A 2017-01-27 2017-09-21 Power module and lighting device TWI651815B (en)

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