WO2018123545A1 - マルチプレクサ - Google Patents

マルチプレクサ Download PDF

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Publication number
WO2018123545A1
WO2018123545A1 PCT/JP2017/044421 JP2017044421W WO2018123545A1 WO 2018123545 A1 WO2018123545 A1 WO 2018123545A1 JP 2017044421 W JP2017044421 W JP 2017044421W WO 2018123545 A1 WO2018123545 A1 WO 2018123545A1
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WO
WIPO (PCT)
Prior art keywords
filter
inductor
parallel arm
arm resonator
inductance value
Prior art date
Application number
PCT/JP2017/044421
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English (en)
French (fr)
Japanese (ja)
Inventor
陽平 小中
Original Assignee
株式会社村田製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社村田製作所 filed Critical 株式会社村田製作所
Priority to CN201790001476.4U priority Critical patent/CN209823720U/zh
Publication of WO2018123545A1 publication Critical patent/WO2018123545A1/ja

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/72—Networks using surface acoustic waves
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/50—Circuits using different frequencies for the two directions of communication

Definitions

  • the present invention relates to a multiplexer.
  • the multiplexer in which a plurality of filters are connected to the common terminal on the antenna end side, when the ladder type filter described in Patent Document 1 is used as a filter corresponding to a high frequency band, the parallel arm resonator is connected to the ground. In some cases, the loss characteristic of the filter corresponding to the low frequency band may be deteriorated by the inductor connected to.
  • one aspect of a multiplexer includes a first filter that passes a high-frequency signal and a ladder filter that passes a high-frequency signal in a higher frequency band than the first filter.
  • a second filter wherein the second filter is connected in series between a common terminal to which the first filter and the second filter are connected, and an input / output terminal opposite to the common terminal.
  • a plurality of parallel arm resonators connected between a node to which the series arm resonator is connected and a ground, and the plurality of parallel arm resonators.
  • the first parallel arm resonator And ground the first inductor is greater inductance than the inductance value between the second parallel arm resonator and the ground are connected.
  • the inductance value between the first parallel arm resonator and the ground and the inductance value between the second parallel arm resonator and the ground are the frequencies of the second filter. Affects the formation of bands.
  • the inductance value between the second parallel arm resonator close to the common terminal and the ground is more than the inductance value between the first parallel arm resonator far from the common terminal and the ground.
  • the influence on the pass characteristics of the filter is large. Therefore, the inductance value of the first inductor connected between the first parallel arm resonator far from the common terminal and the ground is made larger than the inductance value between the second parallel arm resonator and the ground. Accordingly, it is possible to improve the pass characteristic of the first filter corresponding to the frequency band lower than that of the second filter without deteriorating the pass characteristic of the second filter.
  • a second inductor having an inductance value smaller than that of the first inductor may be connected between the second parallel arm resonator and the ground.
  • an inductor having an inductance value of 0 is arranged between the second parallel arm resonator and the ground. Therefore, the inductance value of the first inductor is larger than the inductance value between the second parallel arm resonator and the ground. Thereby, the pass characteristic of the 1st filter corresponding to a lower frequency band than the 2nd filter can be improved, without degrading the pass characteristic of the 2nd filter.
  • At least one other filter in which a frequency band of a high-frequency signal to be passed is different from that of the first filter and the second filter may be further provided.
  • the second filter corresponds to the highest frequency band among the plurality of filters, the pass characteristics of the filter are compared with all other filters corresponding to the frequency band lower than the second filter. Can be improved.
  • a multiplexer capable of improving the pass characteristic of a filter corresponding to a low frequency band connected to a ladder filter at a common terminal.
  • FIG. 4B is a diagram illustrating a pass characteristic of the second filter in the multiplexer according to the embodiment.
  • FIG. 5A is a diagram illustrating a pass characteristic of the first filter in the multiplexer according to the embodiment.
  • FIG. 5B is a diagram illustrating pass characteristics of other filters in the multiplexer according to the embodiment.
  • FIG. 5C is a diagram illustrating a pass characteristic of another filter in the multiplexer according to the embodiment.
  • FIG. 6 is a diagram illustrating the relationship between the loss deterioration amount and the inductance value of the multiplexer according to the embodiment.
  • FIG. 7 is a conceptual diagram showing a configuration of a multiplexer according to a modified example.
  • FIG. 1 is a schematic configuration diagram showing a configuration of a multiplexer 1 according to the present embodiment.
  • the multiplexer 1 includes filters 11, 12, 13, and 14 having different frequency bands.
  • the filters 11, 12, 13 and 14 are each connected to a common terminal 20 connected to the antenna 2.
  • the opposite side of the filters 11, 12, 13, and 14 to the common terminal 20 side is connected to input / output terminals 21, 22, 23, and 24, respectively.
  • the filter 11 is a transmission filter having a band 3 transmission band (1710-1785 MHz) of the LTE (Long Term Evolution) standard as a pass band, for example.
  • LTE Long Term Evolution
  • the filter 12 is a reception filter having a band 3 reception band (1805 to 1880 MHz) as a pass band, for example.
  • the filter 13 is, for example, a transmission filter having a band 1 transmission band (1920-1980 MHz) as a pass band.
  • the filter 13 is a first filter.
  • the filter 14 is, for example, a reception filter having a band 1 reception band (2110-2170 MHz) as a pass band.
  • the filter 14 is a filter used in a higher frequency band than the filters 11, 12 and 13. That is, the filter 14 is a filter that passes a high-frequency signal in the highest frequency band among the plurality of filters provided in the multiplexer 1.
  • the filter 14 includes a ladder type filter including five series arm resonators and four parallel arm resonators. In the present embodiment, the filter 14 is a second filter.
  • one end of the parallel arm resonator 34b is connected to the node between the series arm resonators 32b and 32c
  • one end of the parallel arm resonator 34c is connected to the node between the series arm resonators 32c and 32d.
  • One end of a parallel arm resonator 34d is connected to a node between the arm resonators 32d and 32e.
  • Inductors 36b, 36c, and 36d are connected between the other ends of the parallel arm resonators 34b, 34c, and 34d and the ground, respectively.
  • the parallel arm resonator 34d is a first parallel arm resonator.
  • the inductor 36d is a first inductor.
  • the series arm resonators 32a, 32b, 32c, 32d and 32e, the parallel arm resonators 34a, 34b, 34c and 34d, and the inductors 36a, 36b, 36c and 36d as described above make the filter 14 as a ladder filter. It is configured.
  • the inductance value L1 of the inductor 36a and the inductance value L4 of the inductor 36d are set larger than the inductance value L2 of the inductor 36b and the inductance value L3 of the inductor 36c.
  • the inductance values L1, L2, L3, and L4 of the inductors 36a, 36b, 36c, and 36d are not limited to the values described above, and may be other values.
  • the series arm resonators 32a, 32b, 32c, 32d, and 32e, and the parallel arm resonators 34a, 34b, 34c, and 34d are resonators formed of, for example, surface acoustic wave filters.
  • FIG. 2 is a schematic diagram showing the configuration of the surface acoustic wave filter 100 that constitutes the series arm resonators 32a, 32b, 32c, 32d, and 32e and the parallel arm resonators 34a, 34b, 34c, and 34d.
  • 2A is a plan view
  • FIG. 2B is a cross-sectional view taken along the one-dot chain line shown in FIG.
  • the series arm resonators 32a, 32b, 32c, 32d, and 32e and the parallel arm resonators 34a, 34b, 34c, and 34d have the same configuration, but are not limited thereto.
  • the IDT electrode 101a and the IDT electrode 101b have a structure in which an adhesion layer 107 and a main electrode layer 108 are laminated as shown in FIG.
  • the adhesion layer 107 is a layer for improving the adhesion between the piezoelectric substrate 106 and the main electrode layer 108.
  • a material for example, NiCr is used.
  • the film thickness of the adhesion layer 17 is, for example, 10 nm.
  • the protective layer 109 is formed so as to cover the IDT electrodes 101a and 101b.
  • the protective layer 109 is a layer for the purpose of protecting the main electrode layer 108 from the external environment, adjusting frequency temperature characteristics, and improving moisture resistance, for example, a film containing silicon dioxide as a main component. .
  • the protective layer 109 may have a single layer structure or a laminated structure.
  • the materials constituting the adhesion layer 107, the main electrode layer 108, and the protective layer 109 are not limited to the materials described above. Furthermore, the IDT electrodes 101a and 101b do not have to have the above laminated structure.
  • the IDT electrodes 101a and 101b may be made of, for example, a metal or an alloy such as Ti, Al, Cu, Pt, Au, Ag, or Pd, and a plurality of layers made of the above metals or alloys are laminated. It may also be configured with a stacked structure. Further, the protective layer 109 may not be formed.
  • ⁇ is the repetition pitch of the plurality of electrode fingers 102a and 102b constituting the IDT electrodes 101a and 101b
  • D is the cross width of the IDT electrodes 101a and 101b
  • W is the width of the electrode fingers 102a and 102b
  • S is The width h between the electrode fingers 102a and 102b indicates the height of the IDT electrodes 101a and 101b.
  • the inductor connected to the parallel arm resonator disposed at the position closest to the common terminal and the parallel arm resonator disposed at the position closest to the input / output terminal opposite to the common terminal are connected.
  • the connected inductor is an inductor that greatly influences the determination of the frequency band of the ladder filter. Replacing the inductor values of these inductors does not affect the pass characteristics of the ladder filter itself.
  • the inductor connected to the parallel arm resonator arranged closest to the common terminal is arranged close to other filters connected to the ladder filter, the inductance value of this inductor is large. It is thought that it has a great influence on the pass characteristics of other filters.
  • FIG. 5A is a diagram illustrating the pass characteristic of the filter 13 in the multiplexer 1.
  • FIG. 5B is a diagram illustrating the pass characteristic of the filter 11 in the multiplexer 1.
  • FIG. 5C is a diagram illustrating pass characteristics of the filter 12 in the multiplexer 1.
  • the parallel arm resonators 34a and 34d have the same capacity by adjusting the crossing width and logarithm of the IDT electrodes constituting the parallel arm resonators 34a and 34d.
  • the filter 13 when the relationship between the inductance value L1 of the inductor 36a and the inductance value L4 of the inductor 36d is changed from L4 ⁇ L1 to L1 ⁇ L4, the pass band (1920-1980 MHz) of the filter 13 is obtained. It can be seen that the insertion loss at is reduced and the pass characteristics are improved.
  • the filter 11 when the relationship between the inductance value L1 of the inductor 36a and the inductance value L4 of the inductor 36d is changed from L4 ⁇ L1 to L1 ⁇ L4, the passband (1710-1785 MHz) of the filter 11 is obtained. ) Is reduced, and the pass characteristics are improved.
  • the filter 12 when the relationship between the inductance value L1 of the inductor 36a and the inductance value L4 of the inductor 36d is changed from L4 ⁇ L1 to L1 ⁇ L4, the passband (1805 to 1880 MHz) of the filter 12 is obtained. The insertion loss is reduced, and the pass characteristics are improved.
  • FIG. 6 is a diagram illustrating the relationship between the loss deterioration amount of the high frequency module and the inductance value L1 of the inductor 36a.
  • FIG. 6 shows the loss deterioration amount with respect to the inductance value of the inductor 36a when the Q value (resonance sharpness) is infinite, 40, and 20.
  • the inductance value L1 of the inductor 36a is increased by 0 to 0.2nH, the loss deterioration amount in the parallel arm resonator 34a increases. It can also be seen that the loss degradation amount increases as the Q value decreases.
  • the loss deterioration amount is preferably, for example, 0.03 dB or less. This is because if the loss deterioration amount is 0.03 dB or less, the influence of the filter 14 on the frequency bands of the other filters 11, 12, and 13 can be reduced.
  • the inductance value L1 of the inductor 36a at which the loss degradation amount is 0.03 dB or less is L1 ⁇ 1.8 nH, for example, when Q is 20. Since the inductor 36a is the inductor arranged closest to the common terminal 20 in the filter 14, the inductance value L1 of the inductor 36a greatly affects the other filters 11, 12, and 13. Therefore, it is preferable that the inductance value L1 of the inductor 36a having the greatest influence on the other filters 11, 12, and 13 is L1 ⁇ 1.8 nH. Thereby, the loss degradation amount of the filter 14 can be 0.03 dB or less with a small influence on the frequency bands of the other filters 11, 12, and 13.
  • the Q value of commonly used inductors is 20 to 40. According to FIG. 6, when the Q value is 20 to 40, if the inductance value L1 of the inductor 36a on the common terminal 20 side is L1 ⁇ 1.8 nH, the loss deterioration amount is at least 0.03 dB or less. .
  • the filter 14 is connected to the series arm resonator in the case of a ladder type filter.
  • the number and arrangement of the parallel arm resonators may be changed. Even in this case, by setting the inductance value L1 of the inductor 36a connected to the parallel arm resonator 34a arranged closest to the common terminal 20 to L1 ⁇ 1.8 nH, the filter 14 is connected to the filters 11, 12, and 13. The influence on the frequency band can be reduced.
  • the filter 14 is a filter corresponding to the highest frequency band among the plurality of filters 11, 12, 13, and 14 arranged in the multiplexer 1, another filter corresponding to a frequency band lower than the filter 14 is used.
  • the pass characteristics of all the filters 11, 12 and 13 can be improved.
  • the loss deterioration amount of the filter 14 can be set to 0.03 dB or less. Thereby, the influence which the filter 14 has with respect to the frequency band of the other filters 11, 12, and 13 can be made small, and the pass characteristic of the filters 11, 12, and 13 can be improved.
  • the filter 14 in the multiplexer 1 is a reception filter having a band 1 reception band (2110-2170 MHz) as a pass band, but is not limited thereto.
  • the filter 14 may be a reception filter having another frequency band as a reception band as long as it is not a filter corresponding to the lowest frequency band among the plurality of filters constituting the multiplexer 1.
  • the filter 14 is not limited to a reception filter, and may be a transmission filter or a transmission / reception filter that can perform both transmission and reception.
  • the filter 14 that is a ladder filter connects five series arm resonators 32a, 32b, 32c, 32, and 32e and four parallel arm resonators 34a, 34b, 34c, and 34d.
  • the filter 14 may be configured to include at least one series arm resonator and a plurality (two or more) parallel arm resonators.
  • the multiplexer 1a according to this modification is different from the multiplexer 1 according to the embodiment in that the parallel arm resonator 34a arranged closest to the common terminal 20 in the filter 14a is directly connected to the ground.
  • FIG. 7 is a conceptual diagram showing the configuration of the multiplexer 1a according to this modification.
  • the multiplexer 1a includes filters 11, 12, 13, and 14a.
  • the configurations of the filters 11, 12 and 13 are the same as the configurations of the filters 11, 12 and 13 in the multiplexer 1 shown in the first embodiment, and thus detailed description thereof is omitted.
  • the filter 14a is a ladder type filter, and an inductor 36d is connected between the parallel arm resonator 34d arranged closest to the input / output terminal 24 and the ground. Further, the parallel arm resonator 34a arranged closest to the common terminal 20 is directly connected to the ground. That is, as compared with the multiplexer 1 shown in the above-described embodiment, the inductor 36a shown in the embodiment is not connected between the parallel arm resonator 34a and the ground.
  • the multiplexer 1a has a configuration in which the parallel arm resonator 34a and the ground are directly connected and no inductor is provided between the parallel arm resonator 34a and the ground, the pass characteristic of the filter 14a is deteriorated. Therefore, the pass characteristics of the filters 11, 12 and 13 can be improved.
  • the filter 14 in the multiplexer 1 is a reception filter having a band 1 reception band (2110-2170 MHz) as a pass band, but is not limited thereto.
  • the filter 14 may be a reception filter having another frequency band as a reception band as long as it is not a filter corresponding to the lowest frequency band among the plurality of filters constituting the multiplexer 1.
  • the filter 14 is not limited to a reception filter, and may be a transmission filter or a transmission / reception filter that can perform both transmission and reception.
  • a series arm resonator may be disposed at a position closest to the common terminal 20, or a parallel arm resonator may be disposed.
  • a series arm resonator may be disposed at a position closest to the input / output terminal 24 on the side opposite to the common terminal 20, or a parallel arm resonator may be disposed.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
PCT/JP2017/044421 2016-12-28 2017-12-11 マルチプレクサ WO2018123545A1 (ja)

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Application Number Priority Date Filing Date Title
CN201790001476.4U CN209823720U (zh) 2016-12-28 2017-12-11 多工器

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JP2016256200 2016-12-28
JP2016-256200 2016-12-28

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112290906A (zh) * 2019-07-22 2021-01-29 株式会社村田制作所 滤波器及多工器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010192974A (ja) * 2009-02-16 2010-09-02 Ube Ind Ltd 分波器
WO2014045726A1 (ja) * 2012-09-19 2014-03-27 株式会社村田製作所 フィルタ装置
WO2016015914A1 (de) * 2014-07-31 2016-02-04 Epcos Ag Duplexer mit verbesserter reflektivität

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010192974A (ja) * 2009-02-16 2010-09-02 Ube Ind Ltd 分波器
WO2014045726A1 (ja) * 2012-09-19 2014-03-27 株式会社村田製作所 フィルタ装置
WO2016015914A1 (de) * 2014-07-31 2016-02-04 Epcos Ag Duplexer mit verbesserter reflektivität

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112290906A (zh) * 2019-07-22 2021-01-29 株式会社村田制作所 滤波器及多工器

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