WO2018121611A1 - 基于iii-v族氮化物半导体的led全彩显示器件结构及制备方法 - Google Patents

基于iii-v族氮化物半导体的led全彩显示器件结构及制备方法 Download PDF

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WO2018121611A1
WO2018121611A1 PCT/CN2017/119025 CN2017119025W WO2018121611A1 WO 2018121611 A1 WO2018121611 A1 WO 2018121611A1 CN 2017119025 W CN2017119025 W CN 2017119025W WO 2018121611 A1 WO2018121611 A1 WO 2018121611A1
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led
conversion film
iii
gate
drain
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张希娟
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张希娟
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Definitions

  • the invention belongs to the technical field of semiconductors, and in particular relates to a structure and a preparation method of an LED full color display device based on a III-V nitride semiconductor.
  • III-V nitride (III-Nitride) semiconductor LED chip technology and production process the ultra-high brightness epitaxial wafer and chip production and packaging key technologies continue to break through, and its cost is also continuously reduced, based on LED display of nitride (III-Nitride) semiconductor LED pixel becomes LCOS and OLED with its superior performance over liquid-crystal-on-silicon (LCOS) and organic-semiconductor LED (OLED) Beyond another technology-competitive and promising microdisplay technology.
  • LCOS liquid-crystal-on-silicon
  • OLED organic-semiconductor LED
  • RGB filter pixel patterns are formed on the white LED chip array, and each red, green or blue filter pixel is overlaid on the corresponding white LED chip to form corresponding RGB color illuminating pixels.
  • an opaque shielding wall is used to prevent crosstalk, and color display effect is realized (PCT/CN2014/073773, CN105047681); 3. Multiple short waves are fabricated on a single LED chip.
  • these tiny LED pixel devices have the same LED chip substrate, forming a tiny LED pixel array integrated on a single chip, each tiny LED pixel in the array has a lateral current conduction structure, That is, both the cathode Ohmic metal contact and the anode Ohmic metal contact are directed toward the side facing away from the LED chip substrate, and the electrode faces of the driving pixels on the CMOS silicon-based backplane are connected by bonding, and the current is in the tiny LED pixel device.
  • the first three types of patented technologies are separated and independent of multiple LED chips.
  • the final color illuminating pixel array is formed, and the distance of all adjacent pixels in the display array is difficult to reach a small ( ⁇ 5 ⁇ m), resulting in a low resolution ( ⁇ 500ppi) of the color display.
  • the fourth type of patented technology manufactures a plurality of tiny LED pixel devices on a single LED chip. These tiny LED pixel devices have the same LED chip substrate, and the tiny spacing between the pixels can form narrow air by using semiconductor micro-nano processing technology.
  • the pixel pitch can be as small as a micron or even a submicron range (0 ⁇ t ⁇ 10 ⁇ m).
  • all of the tiny LED pixel devices in the fourth type of patented technology are distributed on a common LED chip substrate, and the thickness of the chip substrate cannot be processed to a very thin ( ⁇ 80 ⁇ m), and this larger thickness of the chip substrate.
  • the red, green, blue or white light conversion film used to form the color display needs to be placed on the surface of the substrate, and the distance of the light emitting layer of the tiny LED pixel device is greater than the thickness of the substrate ( ⁇ 80 ⁇ m), which is emitted by each pixel.
  • a non-conductive chip substrate (such as the commonly used sapphire substrate) requires current in the device structure to be laterally transmitted parallel to the surface of the LED chip substrate in the tiny LED pixel device, resulting in a higher device.
  • the operating voltage (Vf) reduces the luminous efficiency of the pixels in the display.
  • the gradation signal is temporarily registered in the gate capacitance of the MOS capacitor or the MOS transistor. The leakage of charge in these capacitors causes the gate voltage of the driving transistor to drift, which causes the current flowing through the LED to drift, resulting in a change in the brightness of the LED, which does not accurately restore the gray level that it should have.
  • an object of the present invention is to provide a III-V nitride semiconductor-based LED full color display device structure and a preparation method for solving the prior art due to nitride (III- Nitride) semiconductor LED color display device structure uses separate and independent multiple LED chips and the distance between all adjacent pixels is difficult to achieve, resulting in low resolution of color display; because tiny LED pixel devices have the same A thicker LED chip substrate causes significant crosstalk in a full-color display structure of small-pitch pixels, which inevitably causes a problem of low resolution of color display, and a non-conductive chip substrate The device structure requires current to be transmitted laterally parallel to the surface of the LED chip substrate in the tiny LED pixel device, resulting in higher device operating voltage, lowering the luminous efficiency of the pixels in the display; and temporary registration due to gray scale signals Driving circuit gate voltage drift caused by MOS capacitor or gate capacitance of MOS transistor, thereby causing electricity flowing through the LED Drift, resulting in LED brightness variation, and thus can not accurately restore
  • the present invention provides a III-V nitride semiconductor-based LED full color display device structure, and the III-V nitride semiconductor-based LED full color display device structure includes:
  • An active matrix driven silicon-based backplane the active matrix driving silicon-based backplane includes a plurality of driving units, each of the driving units including an anode and a common cathode;
  • An LED micro-pixel array on the surface of the active matrix driving silicon-based backplane includes a plurality of LED micro-pixels; the LED micro-pixels are arranged in an array on the surface of the active matrix driving silicon substrate; each of the LED micro-pixels Each of the anodes of the LED micro-pixels is disposed on a surface of the active matrix driving silicon-based backplane, and is respectively connected to an anode of the driving unit corresponding thereto; the luminescent material layer Located on the anode surface of the LED micropixel;
  • a first conductive type III-V nitride layer located on a surface of the luminescent material layer of each of the LED micro-pixels, and connecting each of the LED micro-pixels;
  • the color display required color conversion film is located on the surface of the III-V nitride layer of the first conductivity type.
  • the luminescent material layer comprises a quantum well layer and a second conductive type III-V nitride layer, A second conductivity type III-V nitride layer is located on an anode surface of the LED micropixel, and the quantum well layer is on a surface of the second conductivity type III-V nitride layer.
  • the number of the driving units is the same as the number of the LED micro pixels.
  • the III-V nitride semiconductor-based LED full color display device structure further includes a transparent electrode layer located at the a surface of the first conductive type III-V nitride layer, and located between the first conductive type III-V nitride layer and the color conversion film, forming a common cathode of the LED micro pixel array,
  • the transparent electrode layer and the common cathode of the active matrix driven silicon-based backplane are connected by a bridge metal.
  • the III-V nitride semiconductor-based LED full color display device structure further includes an insulating transparent film, An insulating transparent film is located on the surface of the transparent electrode layer and between the transparent electrode layer and the color conversion film.
  • the III-V nitride semiconductor-based LED full color display device structure further includes an edge common cathode and an insulating transparent a thin film, the edge common cathode being located outside the LED micro pixel array and located on a surface of the first conductive type III-V nitride layer, the edge common cathode and the active matrix driving silicon based backplane a common cathode is connected by a bridge metal; the insulating transparent film is located on a surface of the first conductive type III-V nitride layer, and is located in the first conductive type III-V nitride layer and the color conversion Between the membranes.
  • the LED micro pixel is a violet LED micro pixel or an ultraviolet LED micro pixel
  • the color conversion film includes: red a light conversion film, a green light conversion film, and a blue light conversion film, wherein the red light conversion film, the green light conversion film, and the blue light conversion film are arrayed on the surface of the first conductive type III-V nitride layer And one-to-one correspondingly disposed directly above the LED micro-pixel.
  • the LED micro pixel is a short wavelength optical LED micro pixel of less than 480 nm
  • the color conversion film comprises: red light filter a light film, a green light filter film, a blue light filter film, and a white light conversion film, the white light conversion film being located on a surface of the first conductive type III-V nitride layer, the red light filter film, the green
  • the light filter film and the blue light filter film are arranged in an array on the surface of the white light conversion film, and are disposed in one-to-one correspondence directly above the LED micro-pixel.
  • the thickness of the white light conversion film is less than 5 times the spacing between adjacent LED micro pixels.
  • the LED micro pixel is a blue LED micro pixel
  • the color conversion film includes a red light conversion film and a green light conversion.
  • the red light conversion film and the green light conversion film are arranged in an array on the surface of the first conductive type III-V nitride layer, and are disposed one by one in a portion directly above the LED micro pixel.
  • a preferred embodiment of the III-V nitride semiconductor-based LED full color display device structure of the present invention further includes a passivation layer, the passivation layer being located in the exposed light emitting material in each of the LED micropixels a surface of the layer and a surface of the first conductive type III-V nitride layer between each of the LED micropixels.
  • the driving unit comprises:
  • a switch-driving transistor comprising a gate, a source and a drain; a drain of the switch-drive transistor being connected to a current source, and a source being connected to an anode of the LED micro-pixel;
  • a first switching transistor comprising a gate, a source and a drain; a gate of the first switching transistor is connected to a synchronous switching signal line, and a source is connected to a gate of the switching-driving transistor;
  • a latch register includes an input end and an output end; the input end of the latch register is coupled to a pulse width or amplitude modulation signal, and the output end is coupled to a drain of the first switching transistor.
  • the driving unit further includes a second switching transistor including a gate, a source, and a drain.
  • the gate of the second switching transistor is connected to the address bus, the drain is connected to the data bus, and the source is connected to the input of the latch register.
  • the latch register includes;
  • a first PMOS transistor including a gate, a source and a drain; a drain of the first PMOS transistor is connected to a power supply voltage;
  • a second PMOS transistor including a gate, a source and a drain; a drain of the second PMOS transistor is connected to the power supply voltage;
  • a first NMOS transistor including a gate, a source and a drain; a gate of the first NMOS transistor is connected to a gate of the first PMOS transistor, and a drain is connected to a source of the first PMOS transistor Connected as an output of the latch register, the source is grounded;
  • a second NMOS transistor including a gate, a source and a drain; a gate of the second NMOS transistor is connected to a gate of the second PMOS transistor, and a drain is connected to a source of the second PMOS transistor Connected as the input to the latch register, the source is grounded.
  • the latch register includes;
  • a third NMOS transistor including a gate, a source and a drain; a gate of the third NMOS transistor is connected to the address bus, and a drain is an output of the latch register;
  • a capacitor is connected at one end to the source of the third NMOS transistor as an output of the latch register and at the other end to ground.
  • the invention also provides a method for preparing a full-color LED display device structure based on a III-V nitride semiconductor, and the method for preparing the LED full-color display device structure based on the III-V nitride semiconductor comprises the following steps:
  • the active matrix driving silicon-based backplane includes a plurality of driving units, each of the driving units including an anode and a common cathode;
  • step 3) bonding the structure obtained in step 3) to the surface of the active matrix driving silicon-based backplane, the anode surface of the LED micro-pixel is a bonding surface, and the anode of the LED micro-pixel and the driving unit The anode is connected;
  • step 2) As a preferred solution of the method for fabricating the III-V nitride semiconductor-based LED full color display device structure of the present invention, the following steps are further included between step 2) and step 3):
  • step 2 Forming a passivation layer on the surface of the structure obtained in step 2), the passivation layer covering the surface of each of the LED micropixels and the first conductive between the LED micropixels and outside the LED pixel microarray a surface of a type III-V nitride layer;
  • the driving unit comprises:
  • a switch-driving transistor comprising a gate, a source and a drain; a drain of the switch-drive transistor being connected to a current source, and a source being connected to an anode of the LED micro-pixel;
  • a first switching transistor comprising a gate, a source and a drain; a gate of the first switching transistor is connected to a synchronous switching signal line, and a source is connected to a gate of the switching-driving transistor;
  • a latch register includes an input end and an output end; the input end of the latch register is coupled to a pulse width or amplitude modulation signal, and the output end is coupled to a drain of the first switching transistor.
  • the driving unit further includes a second switching transistor, the second switching transistor including a gate and a source And a drain and a drain, the gate of the second switching transistor is connected to the address bus, the drain is connected to the data bus, and the source is connected to the input end of the latch register.
  • the latch register includes:
  • a first PMOS transistor including a gate, a source and a drain; a drain of the first PMOS transistor is connected to a power supply voltage;
  • a second PMOS transistor including a gate, a source and a drain; a drain of the second PMOS transistor is connected to the power supply voltage;
  • a first NMOS transistor including a gate, a source and a drain; a gate of the first NMOS transistor is connected to a gate of the first PMOS transistor, and a drain is connected to a source of the first PMOS transistor Connected as an output of the latch register, the source is grounded;
  • a second NMOS transistor including a gate, a source and a drain; a gate of the second NMOS transistor is connected to a gate of the second PMOS transistor, and a drain is connected to a source of the second PMOS transistor Connected as the input to the latch register, the source is grounded.
  • the latch register includes:
  • a third NMOS transistor including a gate, a source and a drain; a gate of the third NMOS transistor is connected to the address bus, and a drain is an output of the latch register;
  • a capacitor is connected at one end to the source of the third NMOS transistor as an output of the latch register and at the other end to ground.
  • the step 5) comprises the following steps:
  • step 3 The structure obtained in the step 3) is bonded to the surface of the active matrix driving silicon-based back sheet by flip chip bonding via the bump underlayer metal layer and the bonding pad.
  • step 6) As a preferred solution of the method for fabricating the III-V nitride semiconductor-based LED full color display device structure of the present invention, the following steps are further included between step 6) and step 7):
  • step 7 Forming a transparent electrode layer on the surface of the first conductive type III-V nitride layer to form a common cathode of the LED micro pixel array; in step 7), the color conversion film is formed on the surface of the transparent electrode layer.
  • step 6) As a preferred solution of the method for fabricating the III-V nitride semiconductor-based LED full color display device structure of the present invention, the following steps are further included between step 6) and step 7):
  • An insulating transparent film is formed on the surface of the transparent electrode layer; in the step 7), the color conversion film is formed on the surface of the insulating transparent film.
  • step 6) As a preferred solution of the method for fabricating the III-V nitride semiconductor-based LED full color display device structure of the present invention, the following steps are further included between step 6) and step 7):
  • step 7 Forming an insulating transparent film on the surface of the first conductive type III-V nitride layer; in step 7), the color conversion film is formed on the surface of the insulating transparent film.
  • the LED micro pixel is a violet LED micro pixel or an ultraviolet LED micro pixel, which is formed in step 7)
  • the color conversion film includes: a red light conversion film, a green light conversion film, and a blue light conversion film, the red light conversion film, the green light conversion film, and the blue light conversion film in the first conductive type III-
  • the surface of the group V nitride layer is distributed in an array, and is disposed in one-to-one correspondence directly above the LED micro-pixel.
  • the LED micropixel is a short-wavelength light LED micro pixel of less than 480 nm, and the step formed in the step 7)
  • the color conversion film includes: a red light filter film, a green light filter film, a blue light filter film, and a white light conversion film, wherein the white light conversion film is located on a surface of the first conductive type III-V nitride layer,
  • the red light filter film, the green light filter film and the blue light filter film are arranged in an array on the surface of the white light conversion film, and are disposed in a one-to-one correspondence directly above the LED micro pixels.
  • the thickness of the white light conversion film is less than 5 times the spacing between adjacent LED micro pixels.
  • the LED micro pixel is a blue LED micro pixel
  • the color conversion film formed in the step 7) a red light conversion film and a green light conversion film, wherein the red light conversion film and the green light conversion film are arranged in an array on the surface of the first conductive type III-V nitride layer, and one-to-one correspondingly disposed in a portion
  • the LED micropixel is directly above.
  • the III-V nitride semiconductor-based LED full color display device structure and the preparation method of the present invention have the following beneficial effects: the III-V nitride semiconductor-based LED full color display device structure of the present invention
  • Each of the LED micro-pixels and each of the color conversion films are connected by a first conductivity type III-V nitride layer having a small thickness, which can reduce the spacing between adjacent LED micro-pixels to improve the resolution thereof.
  • the crosstalk between adjacent color conversion films is reduced, thereby significantly improving the contrast of the display device structure of the present invention; meanwhile, the display structure of the present invention has the characteristics of high resolution, high contrast, high luminous efficiency, and the device structure is simple to prepare. And easy to implement.
  • FIG. 1 and FIG. 2 are schematic cross-sectional views showing the structure of a full-color LED display device based on a III-V nitride semiconductor according to a first embodiment of the present invention.
  • Fig. 3 is a schematic enlarged view showing the area A of Fig. 1.
  • FIG. 4 is a schematic diagram showing lateral expansion of light emitted from a layer of luminescent material in an LED full color display device structure having a substrate after being refracted via an epitaxial layer and a substrate.
  • FIG. 5 is a circuit diagram showing a driving unit in an active matrix driving silicon-based backplane in a III-V nitride semiconductor-based LED full color display device structure according to Embodiment 1 of the present invention.
  • FIG. 6 and FIG. 7 are circuit diagrams showing a latch register in a driving unit in an active matrix driving silicon-based backplane in a III-V nitride semiconductor-based LED full color display device structure according to Embodiment 1 of the present invention. .
  • FIG. 8 is a flow chart showing a method for fabricating a III-V nitride semiconductor-based LED full color display device structure according to Embodiment 2 of the present invention.
  • FIG. 9 to FIG. 20 are schematic cross-sectional views showing the steps of a method for fabricating a full-color LED display device based on a III-V nitride semiconductor according to a second embodiment of the present invention.
  • the present invention provides a III-V nitride semiconductor-based LED full color display device structure
  • the III-V nitride semiconductor-based LED full color display device structure includes: active The matrix drives a silicon-based backplane 1, the active matrix driving silicon-based backplane 1 includes a plurality of driving units 11, each of which includes an anode (not shown) and a common cathode (not shown)
  • the surface of the LED micro-pixels 2 includes an illuminant layer 21 and an anode 22, and the anodes 22 of each of the LED micro-pixels 2 are located on the surface of the active matrix-driven silicon-based backplane 1 and respectively Connected to the anode of the corresponding driving unit 11; the luminescent material layer 21 is located on the surface of the anode 22 of
  • the LED micropixel 2 and the first conductive type III-V nitride layer 3 are bonded to the surface of the active matrix driving silicon-based backplane 1 by a flip chip bonding process, the LED The anode 22 of the micropixel 2 is bonded to the surface of the active matrix driving silicon-based backsheet 1 via a bump underlayer metal layer and a bonding pad 9.
  • the anode 22 of the LED micropixel 2 may also be bonded to the surface of the active matrix driving silicon-based backsheet 1 by solder pillars, eutectic bonding or anisotropic conductive adhesive.
  • the metal material used for bonding (the material of the bump underlayer metal layer and the bonding pad 9 in this embodiment) may include, but is not limited to, Au, Al, Ag, Pb, AuSn, AgSn, AgIn, Cu, and In. .
  • the horizontal direction represents the lateral expansion radius of the LED micro-pixel luminescence
  • ⁇ represents the half-width of the LED micro-pixel luminescence in the III-V nitride layer
  • the t- epitaxial layer and the t- substrate respectively represent the III-V nitride layer.
  • the thickness and the thickness of the growth substrate, the n epitaxial layer and the n substrate represent the refractive indices of the III-V nitride layer and the substrate, respectively. It can be seen from the above formula that when the thickness of the III-V nitride layer is much smaller than the thickness of the growth substrate, the removal of the growth substrate can greatly reduce the red-green color caused by the lateral expansion of the LED micro-pixel illumination.
  • Each of the LED micropixels 2 and each of the color conversion films 4 of the III-V nitride semiconductor-based LED full color display device structure of the present invention is connected by a first conductivity type III-V nitride layer 3 having a small thickness.
  • the spacing between adjacent LED micropixels 2 can be reduced to increase the resolution thereof, and the crosstalk between adjacent color conversion films 4 can be reduced, thereby significantly improving the contrast of the display device structure of the present invention.
  • the LED micropixel 2 has a micro mesa structure, and the LED micropixel 2 may be a square micro mesa structure, a rectangular micro mesa structure, a circular micro mesa structure or a hexagonal micro mesa structure; the LED micro pixel 2
  • the height is greater than the height of the luminescent material layer 21.
  • the width of the air groove limits the phase.
  • the minimum distance between adjacent micropixels which in turn limits the density of the LED pixel array, limits the resolution of the color display device on the LED chip.
  • the LED micro-pixels 2 in the device structure of the present invention are located on the same surface of the first conductive type III-V nitride layer 3, and there is no shared growth substrate, that is, the device structure of the present invention is present.
  • the growth substrate is stripped, and the depth of the air grooves (that is, the height of the luminescent material layer 21) only needs to be slightly larger than the sum of the thicknesses of the luminescent material layers 21 (0.1 to 3 um).
  • the air groove depth (5-20 um) required for the first conductive type III-V nitride layer 3 is smaller, and at the same time, the width of the isolation layer is greatly reduced with the decrease of the depth, so the LED full color of the present invention
  • the density of the LED micropixels 2 in the display device structure is much higher than in the prior art color displays employing fully separate and independent LED pixel structures.
  • the luminescent material layer 21 includes a quantum well layer 211 and a second conductive type III-V nitride layer 212, and the second conductive type III-V nitride layer 212 is located at The surface of the anode 22 of the LED micropixel 2 is located, and the quantum well layer 211 is located on the surface of the second conductivity type III-V nitride layer 212.
  • the second conductivity type is different from the first conductivity type, that is, when the first conductivity type III-V nitride layer 3 is a P-type III-V nitride layer, the second The conductive type III-V nitride layer 212 is an N-type III-V nitride layer; when the first conductive type III-V nitride layer 3 is an N-type III-V nitride layer, the first The second conductivity type III-V nitride layer 212 is a P-type III-V nitride layer.
  • the first conductive type III-V nitride layer 3 has a thickness of less than or equal to 20 um.
  • the materials of the first conductive type III-V nitride layer 3 and the second conductive type nitride layer 212 may each be, but are not limited to, GaN, AlN, AlGaN, InGaN, InAlN, or InAlGaN.
  • the material of the anode 22 of the LED micropixel 2 may be, but not limited to, an ohmic electrode material such as Cr, Ni, Au, Ag, Al, Pt, ITO, SnO, or ZnO.
  • the thickness of the LED micropixel 2 may be, but not limited to, 0.001 to 50 um.
  • the number of the driving units 11 is the same as the number of the LED micro pixels 2.
  • the III-V nitride semiconductor-based LED full color display device structure further includes a transparent electrode layer 5, and the transparent electrode layer 5 is located in the first conductive type III-V nitride layer 3 a surface, and located between the first conductive type III-V nitride 3 and the color conversion film 4, forming a common cathode of the LED micro pixel array, the transparent electrode layer 5 and active matrix driving silicon
  • the common cathode of the base backing plate 1 is connected by a bridging metal 51; the transparent electrode layer 5 serves as a common cathode for some or all of the LED micropixels 2.
  • the transparent electrode layer 5 may be a transparent or translucent ohmic thin film electrode, and the material of the transparent electrode layer 5 may be, but not limited to, Cr, Ni, Au, Ag, Al, Pt, ITO, SnO, ZnO or graphene. Equal ohmic electrode material.
  • the transparent electrode layer 5 may be connected to a common cathode in the active matrix driven silicon-based backplane by a bridge metal 51.
  • the transparent electrode layer 5 as a common cathode of the LED micropixel 2 in the LED full color display device structure, and driving the transparent electrode layer 5 and the active matrix to drive the silicon based backplane 1
  • the common cathodes are connected such that the driving current in the LED micropixels 2 can be transmitted in a direction perpendicular to the first conductive type III-V nitride layer 3, realizing vertical current transmission in the LED micropixels 2
  • the current uniformity is enhanced, thereby solving the problems of uneven current distribution and large electric resistance caused by the lateral conduction of the common cathode current.
  • the III-V nitride semiconductor-based LED full color display device structure further includes an insulating transparent film (not shown) including the transparent electrode layer 5, the insulating transparent The film is located on the surface of the transparent electrode layer 5 and is located between the transparent electrode layer 5 and the color conversion film 4.
  • the material of the insulating transparent film may include an inorganic dielectric material and an organic molecular material.
  • the III-V nitride semiconductor-based LED full color display device structure further includes an edge common cathode (not shown) and an insulating transparent film (not shown), the edge common cathode being located Outside the LED micro-pixel array, and on the surface of the first conductive type III-V nitride layer 3, the edge common cathode and the common cathode of the active matrix driving silicon-based backplane 1 pass through the bridge metal 51 Connecting; that is, compared to the foregoing example, the III-V nitride semiconductor-based LED full color display device structure in this example includes only the edge common cathode and the insulating transparent film, and does not include the transparent electrode layer 5 The insulating transparent film is located on the surface of the first conductive type III-V nitride layer 3 and between the first conductive type III-V nitride layer 3 and the color conversion film 4.
  • the LED micropixel 2 is a violet LED micropixel or an ultraviolet LED micropixel, and the LED micropixel 2 emits violet or ultraviolet light shorter than 440 nm;
  • the color conversion film 4 includes: a red light conversion film 41, a green light conversion film 42 and a blue light conversion film 43, the red light conversion film 41, the green light conversion film 42 and the blue light conversion film 43 being in the first conductivity type III
  • the surface of the -V group nitride layer 3 is arranged in an array, and is disposed one by one directly above the LED micropixel 2; that is, the red light conversion film 41, the green light conversion film 42, and the blue light conversion film 43 Arranging periodically on the surface of the first conductive type III-V nitride layer 3 in a micro-array array, the size of each of the micro-area arrays being the same or similar to the size of the LED micro-pixels 2, And including one of the color conversion films.
  • the violet or ultraviolet light emitted by the LED micropixel 2 excites the red light
  • materials of the red light conversion film 41, the green light conversion film 42, and the blue light conversion film 43 include inorganic phosphors and phosphorescent materials, organic dyes, organic fluorescent or phosphorescent materials, and inorganic semiconductor nano materials, which may Convert violet or ultraviolet light into red, green and blue light.
  • the LED micropixel 2 is a blue LED micropixel, and the LED micropixel 2 emits blue light having a wavelength of 440 nm to 490 nm;
  • the color conversion film 4 includes a red light conversion film 41 and a green light conversion film.
  • the red light conversion film 41 and the green light conversion film 42 are arranged in an array on the surface of the first conductive type III-V nitride layer 3, and are disposed in one part to the part of the LED micro pixel 2 Directly above, the red light conversion film 41 and the green light conversion film 42 are periodically alternately arranged on the surface of the first conductive type III-V nitride layer 3 in the form of a micro-array array, each of which is described above.
  • the size of the micro-area array is the same as or similar to the size of the LED micro-pixel 2, and each of the red light conversion film 41 and the green light conversion film 42 corresponds to one of the LED micro-pixels 2.
  • the blue light emitted by the LED micropixel 2 excites the red light conversion film 41 and the green light conversion film 42 to emit red light and green light respectively, and the full color display requires blue light emitted by the LED micro pixel 2 provide.
  • the red light conversion film 41 and the green light conversion film 42 are located directly above a portion of the LED micro pixels 2, that is, some of the LED micro pixels 2 are not above the red color.
  • the light conversion film 41 or the green light conversion film 42 are located directly above a portion of the LED micro pixels 2, that is, some of the LED micro pixels 2 are not above the red color.
  • the materials of the red light conversion film 41 and the green light conversion film 42 include inorganic phosphors and phosphorescent materials, organic dyes, organic fluorescent or phosphorescent materials, and inorganic semiconductor nano materials, which can convert blue light into red light and Green light.
  • the LED micropixel 2 is a short-wavelength light LED micropixel of less than 480 nm, and the LED micropixel 2 emits short-wavelength light having a wavelength shorter than 480 nm; the color conversion film 4
  • the red light filter film 45, the green light filter film 46, the blue light filter film 47, and the white light conversion film 44 are disposed on the surface of the first conductive type III-V nitride layer 3.
  • the red light filter film 45, the green light filter film 46, and the blue light filter film 47 are distributed in an array on the surface of the white light conversion film 44, and are disposed one by one in the LED micro pixel 2
  • the red light filter film 45, the green light filter film 46, and the blue light filter film 47 are periodically arranged alternately on the surface of the white light conversion film 22 in the form of a micro-area array, each of which The size of the array of microdomains is identical or similar to the size of the LED micropixels 2 and comprises one of the color conversion films.
  • the material of the white light conversion film 44 includes an inorganic phosphor and a phosphorescent material, an organic dye, an organic fluorescent or phosphorescent material, and an inorganic semiconductor nano material, which can be converted and mixed by color when illuminated by blue-violet light or ultraviolet light. Converting the transmitted light into white light; the material of the red light filter film 45, the green light filter film 46, and the blue light filter film 47 includes an organic molecular material and a dielectric film material, which can selectively absorb or reflect each Light of a wavelength that transmits the desired red, green, and blue light.
  • the thickness of the white light conversion film 44 is less than 5 times the spacing between adjacent LED micropixels 2 in order to reduce crosstalk between each of the LED micropixels 2.
  • the LED full color display device structure further includes a passivation layer 7 located on a surface of the exposed luminescent material layer 21 in each of the LED micropixels 2 and The surface of the first conductive type III-V nitride layer 3 between each of the LED micropixels 2.
  • the material of the passivation layer 7 may be, but not limited to, SiO 2
  • the thickness of the passivation layer 7 may be, but not limited to, 0.1 to 2000 nm.
  • the driving unit 11 includes: a switch-driving transistor 111, the switch-driving transistor 111 includes a gate, a source and a drain; and a drain of the switch-driving transistor 111 A current source 115 is connected, a source is connected to an anode of the LED micro pixel; a first switching transistor 112, the first switching transistor 112 includes a gate, a source and a drain; and the first switching transistor 112 a gate connected to the synchronous switch signal line, a source connected to the gate of the switch-drive transistor 111, a latch register 113, the latch register 113 including an input and an output; the latch register An input of 113 is coupled to the pulse width or amplitude modulation signal, and an output is coupled to the drain of the first switching transistor 112.
  • the driving unit 11 further includes a second switching transistor 114, the second switching transistor 114 includes a gate, a source and a drain, and a gate of the second switching transistor 114 is connected to the address bus, and the drain The pole is coupled to the data bus and the source is coupled to the input of the latch register 113.
  • a gradation modulation signal from the data bus is registered in the latch register 113 and transmitted to the gate of the switch-drive transistor 111 to control the current conduction time or intensity flowing through the LED micropixel 2. , forming a gray scale.
  • the latch register 113 includes: a first PMOS transistor 1131, the first PMOS transistor 1131 includes a gate, a source, and a drain; and the first PMOS transistor 1131 The drain is connected to the power supply voltage VDD; the second PMOS transistor 1132, the second PMOS transistor 1132 includes a gate, a source and a drain; and the drain of the second PMOS transistor 1132 is connected to the power supply voltage VDD a first NMOS transistor 1133, the first NMOS transistor 1133 includes a gate, a source and a drain; a gate of the first NMOS transistor 1133 is connected to a gate of the first PMOS transistor 1131, and a drain Connected to the source of the first PMOS transistor 1131 as an output terminal of the latch register 113, the source of the first NMOS transistor 1133 is grounded; the second NMOS transistor 1134, the second NMOS transistor 1134 includes a gate, a source and a drain; a gate of the second NMOS transistor 1131 The drain is connected to the
  • the latch register 113 includes a third NMOS transistor 1135 including a gate, a source, and a drain; a gate of the third NMOS transistor 1135 and the An address bus is connected, a drain of the third NMOS transistor 1135 is an output end of the latch register 113, and a capacitor 1136, one end of the capacitor 1136 is connected to a source of the third NMOS transistor 1135 as the latch The output of the lock register 113 is grounded at the other end.
  • the LED micropixels 2 are formed by closely arranging to form a high density array, and the operating voltage or current of each of the LED micropixels 2 is connected by the anode connected thereto
  • the source matrix drives the driving unit 11 in the silicon-based backplane 1 to control, and modulates the duration or intensity of the LED micropixels 2 to achieve gray scale control of each of the LED micropixels 2, and each
  • the short-wavelength light emission of the LED micro-pixel 2 further excites the color conversion film 4 corresponding thereto to form a spatial distribution of periodic red-green-blue pixel illumination on the surface of the device, and adjacent red-green-blue pixels
  • the different gray scales are combined to produce various color illuminating patterns on the surface of the LED full color display device.
  • the present invention further provides a method for fabricating a full-color LED display device structure based on a III-V nitride semiconductor, the preparation method being suitable for preparing the LED full color display device structure described in the first embodiment.
  • the method for preparing a III-V nitride semiconductor-based LED full color display device structure includes the following steps:
  • the active matrix driving silicon-based backplane includes a plurality of driving units, each of the driving units including an anode and a common cathode;
  • step 3) bonding the structure obtained in step 3) to the surface of the active matrix driving silicon-based backplane, the anode surface of the LED micro-pixel is a bonding surface, and the anode of the LED micro-pixel and the driving unit The anode is connected;
  • step 1) referring to step S1 in FIG. 8 and FIG. 9, a growth substrate 8 is provided, and a buffer layer (not shown) is sequentially grown on the surface of the growth substrate 8, and the first conductivity type III-V group is grown.
  • the growth substrate 8 may include, but is not limited to, a sapphire substrate, a SiC substrate, or a Si substrate.
  • the first conductive type III-V nitride layer 3 has a thickness of less than or equal to 20 um.
  • the materials of the first conductive type III-V nitride layer 3 and the second conductive type nitride layer 212 may each be, but are not limited to, GaN, AlN, AlGaN, InGaN, InAlN, or InAlGaN.
  • the second conductivity type is different from the first conductivity type, that is, the first conductivity type III-V nitride layer 3 is a P-type III-V nitride layer
  • the second conductivity type III-V nitride layer 212 is an N-type III-V nitride layer; when the first conductivity type III-V nitride layer 3 is an N-type III-V nitride layer,
  • the second conductive type III-V nitride layer 212 is a P-type III-V nitride layer.
  • step 2) referring to the step S2 in FIG. 8 and FIG. 10 to FIG. 11, the second conductive type III-V nitride layer 212 and the quantum well layer 211 are selectively etched until exposed. a first conductive type III-V nitride layer 3 to form a micro LED mesa array while forming a recess exposing the first conductive type III-V nitride layer 3 outside the micro LED mesa array .
  • the second conductive type III-V nitride layer 212 and the quantum well layer 211 may be etched by a conventional etching process to form the micro LED mesa array, and the etching process is well known to those skilled in the art. , no longer repeat here.
  • the micro-mesa surface of the LED mesa array may be a square micro-mesa structure, a rectangular micro-mesa structure, a circular micro-mesa structure or a hexagonal micro-top structure.
  • the micro-tablet is rectangular.
  • the size of each of the micro-mesa and the spacing between the adjacent micro-tops can be set according to actual needs.
  • the size of each of the micro-mesa is 10 um ⁇ 10 um, adjacent to the The spacing between the micro-tablets is 2um.
  • the size of each of the micro mesas and the spacing between the adjacent micro mesas may be set to other values, and are not limited thereto.
  • step 2) the following steps are further included:
  • a passivation layer 7 on the surface of the structure obtained in the step 2), the passivation layer 7 covering the surface of each of the LED micro-pixels 2 and between the LED micro-pixels 2 and the outside of the LED micro-pixel array The surface of the first conductivity type III-V nitride layer 3;
  • step 3 referring to step S3 in FIG. 8 and FIG. 10 to FIG. 11, an anode 22 is formed on the surface of the second conductive type III-V nitride layer 212 in the micro LED mesa array.
  • the anode 22, the quantum well layer 211, and the second conductivity type III-V nitride layer 212 together constitute an LED micropixel 2, and each of the LED micropixels 2 collectively form an LED micropixel array.
  • the anode 22 may be directly formed on the surface of the second conductive type III-V nitride layer 212 by a photolithography etching process; in another example, As shown in FIG. 11, metal is deposited in the opening and unwanted metal is removed to obtain the anode 22.
  • the material of the anode 22 of the LED micro pixel 2 may be at least one of ohmic electrode materials such as Cr, Ni, Au, Ag, Al, Pt, ITO, SnO or ZnO;
  • the thickness of the anode 22 of the LED micropixel 2 is preferably Cr/Cu or Ni/Au and has a thickness of 1-2 um.
  • step 4 referring to step S4 in FIG. 8 and FIG. 5, FIG. 6, FIG. 7 and FIG. 12, an active matrix driving silicon-based backplane 1 is provided, and the active matrix is driven in the silicon-based backplane 1
  • a plurality of drive units 11 are included, each of which includes an anode and a common cathode.
  • the driving unit 11 includes: a switch-driving transistor 111, the switch-driving transistor 111 includes a gate, a source and a drain; and a drain of the switch-driving transistor 111
  • a current source 115 is connected, a source is connected to an anode of the LED micro pixel; a first switching transistor 112, the first switching transistor 112 includes a gate, a source and a drain; and the first switching transistor 112
  • the gate is connected to the synchronous switch signal line, the source is connected to the gate of the switch-drive transistor 111; the register 113, the register 113 includes an input end and an output terminal; and the input end of the register 113 is pulsed
  • the wide or amplitude modulated signals are coupled and the output is coupled to the drain of the first switching transistor 112.
  • the driving unit 11 further includes a second switching transistor 114, the second switching transistor 114 includes a gate, a source and a drain, and a gate of the second switching transistor 114 is connected to the address bus, and the drain The pole is coupled to the data bus and the source is coupled to the input of the register 113.
  • a gradation modulation signal from the data bus is registered in the latch register 113 and transmitted to the gate of the switch-drive transistor 111 to control the current conduction time or intensity flowing through the LED micropixel 2. , forming a gray scale.
  • the register 113 is a latch register, including: a first PMOS transistor 1131, the first PMOS transistor 1131 includes a gate, a source, and a drain; the first PMOS The drain of the transistor 1131 is connected to the power supply voltage VDD; the second PMOS transistor 1132, the second PMOS transistor 1132 includes a gate, a source and a drain; a drain of the second PMOS transistor 1132 and the power supply voltage VDD is connected; a first NMOS transistor 1133, the first NMOS transistor 1133 includes a gate, a source and a drain; a gate of the first NMOS transistor 1133 is connected to a gate of the first PMOS transistor 1131 a drain is connected to a source of the first PMOS transistor 1131 as an output terminal of the latch register 113, a source of the first NMOS transistor 1133 is grounded; a second NMOS transistor 1134, the second NMOS The transistor 1134 includes a gate, a source and a drain;
  • the register 113 includes: a third NMOS transistor 1135 including a gate, a source, and a drain; a gate of the third NMOS transistor 1135 and the address bus Connected, the drain of the third NMOS transistor 1135 is the output of the latch register 113; the capacitor 1136, one end of the capacitor 1136 is connected to the source of the third NMOS transistor 1135 as the latch register The output of 113 is grounded.
  • step 5 referring to step S5 in FIG. 8 and FIG. 13, the structure obtained in step 3) is bonded to the surface of the active matrix driving silicon-based backplane 1, and the anode 22 of the LED micro-pixel 2
  • the surface is a bonding surface, and the anode 22 of the LED micropixel 2 is connected to the anode of the driving unit 11.
  • step 5 includes the following steps:
  • step 3 The structure obtained in the step 3) is bonded to the surface of the active matrix driving silicon-based back sheet 1 by flip chip bonding via the bump underlayer metal layer and the bonding pad 9.
  • the structure obtained in step 3) may also be bonded to the surface of the active matrix driving silicon-based backsheet 1 by soldering, eutectic bonding, or anisotropic conductive adhesive or the like.
  • step 6 referring to step S6 in FIG. 8 and FIG. 14, the growth substrate 8 is removed.
  • the growth substrate 8 may be removed using a chemical etching process, a laser lift-off process, or a plasma etching process.
  • the transparent electrode layer 5 constitutes a common cathode of the LED micro pixel array; and the transparent The electrode layer 5 is connected to the common cathode of the active matrix driving silicon-based backplane 1 through the wiring structure 51, as shown in FIG. 16; at this time, in the subsequent step 7), the color conversion film is formed in the The surface of the transparent electrode layer 5.
  • a transparent electrode layer 5 on the surface of the first conductive type III-V nitride layer 3, the transparent electrode layer 5 forming a common cathode of the LED micro pixel array;
  • An insulating transparent film 6 is formed on the surface of the transparent electrode layer 5; at this time, in the subsequent step 7), the color conversion film is formed on the surface of the insulating transparent thin film 6.
  • An insulating transparent film (not shown) is formed on the exposed surface of the first conductive type III-V nitride layer 3; at this time, in the subsequent step 7), the color conversion film is formed on the insulating transparent film 6 surface.
  • step 7 referring to step S7 in FIG. 8 and FIGS. 19 to 20, a color conversion film 4 required for color display is formed on the surface of the first conductive type III-V nitride layer 3.
  • FIGS. 19 and 20 are exemplified by forming the transparent electrode layer 5 on the surface of the first conductive type III-V nitride layer 3, that is, the color conversion film 4 is formed on the transparent electrode layer 5. s surface.
  • the LED micropixel 2 is a violet LED micropixel or an ultraviolet LED micropixel, and the LED micropixel 2 emits violet or ultraviolet light shorter than 440 nm;
  • the color conversion film 4 includes: a red light conversion film 41, a green light conversion film 42 and a blue light conversion film 43, the red light conversion film 41, the green light conversion film 42 and the blue light conversion film 43 being in the first conductivity type III
  • the surface of the -V group nitride layer 3 is arranged in an array, and is disposed one by one directly above the LED micropixel 2; that is, the red light conversion film 41, the green light conversion film 42, and the blue light conversion film 43 Arranging periodically on the surface of the first conductive type III-V nitride layer 3 in a micro-array array, the size of each of the micro-area arrays being the same or similar to the size of the LED micro-pixels 2, And including one of the color conversion films.
  • the violet or ultraviolet light emitted by the LED micropixel 2 excites the red light
  • materials of the red light conversion film 41, the green light conversion film 42, and the blue light conversion film 43 include inorganic phosphors and phosphorescent materials, organic dyes, organic fluorescent or phosphorescent materials, and inorganic semiconductor nano materials, which may Convert violet or ultraviolet light into red, green and blue light.
  • the LED micropixel 2 is a blue LED micropixel, and the LED micropixel 2 emits blue light having a wavelength of 440 nm to 490 nm;
  • the color conversion film 4 includes a red light conversion film 41 and a green light conversion film.
  • the red light conversion film 41 and the green light conversion film 42 are arranged in an array on the surface of the first conductive type III-V nitride layer 3, and are disposed in one part to the part of the LED micro pixel 2 Directly above, the red light conversion film 41 and the green light conversion film 42 are periodically alternately arranged on the surface of the first conductive type III-V nitride layer 3 in the form of a micro-array array, each of which is described above.
  • the size of the micro-area array is the same as or similar to the size of the LED micro-pixel 2, and each of the red light conversion film 41 and the green light conversion film 42 corresponds to one of the LED micro-pixels 2.
  • the blue light emitted by the LED micropixel 2 excites the red light conversion film 41 and the green light conversion film 42 to emit red light and green light respectively, and the full color display requires blue light emitted by the LED micro pixel 2 provide.
  • the red light conversion film 41 and the green light conversion film 42 are located directly above a portion of the LED micro pixels 2, that is, some of the LED micro pixels 2 are not above the red color.
  • the light conversion film 41 or the green light conversion film 42 are located directly above a portion of the LED micro pixels 2, that is, some of the LED micro pixels 2 are not above the red color.
  • the materials of the red light conversion film 41 and the green light conversion film 42 include inorganic phosphors and phosphorescent materials, organic dyes, organic fluorescent or phosphorescent materials, and inorganic semiconductor nano materials, which can convert blue light into red light and Green light.
  • the LED micropixel 2 is a short-wavelength light LED micropixel of less than 480 nm, and the LED micropixel 2 emits short-wavelength light having a wavelength shorter than 480 nm; the color conversion film 4
  • the red light filter film 45, the green light filter film 46, the blue light filter film 47, and the white light conversion film 44 are disposed on the surface of the first conductive type III-V nitride layer 3.
  • the red light filter film 45, the green light filter film 46, and the blue light filter film 47 are distributed in an array on the surface of the white light conversion film 44, and are disposed one by one in the LED micro pixel 2
  • the red light filter film 45, the green light filter film 46, and the blue light filter film 47 are periodically arranged alternately on the surface of the white light conversion film 22 in the form of a micro-area array, each of which The size of the array of microdomains is identical or similar to the size of the LED micropixels 2 and comprises one of the color conversion films.
  • the material of the white light conversion film 44 includes an inorganic phosphor and a phosphorescent material, an organic dye, an organic fluorescent or phosphorescent material, and an inorganic semiconductor nano material, which can be converted and mixed by color when illuminated by blue-violet light or ultraviolet light. Converting the transmitted light into white light; the material of the red light filter film 45, the green light filter film 46, and the blue light filter film 47 includes an organic molecular material and a dielectric film material, which can selectively absorb or reflect each Light of a wavelength that transmits the desired red, green, and blue light.
  • the thickness of the white light conversion film 44 is less than 5 times the spacing between adjacent LED micropixels 2 in order to reduce crosstalk between each of the LED micropixels 2.
  • the present invention provides a III-V nitride semiconductor-based LED full color display device structure and a preparation method thereof
  • the III-V nitride semiconductor-based LED full color display device structure includes: active a matrix-driven silicon-based backplane, the active matrix driving silicon-based backplane includes a plurality of driving units, each of the driving units including an anode and a common cathode; and an LED micro-pixel array located in the active matrix driving silicon a surface of the backplane, comprising a plurality of LED micropixels; the LED micropixels are arranged in an array on the surface of the active matrix driving silicon substrate; each of the LED micropixels comprises a luminescent material layer and an anode, and each of the LED micropixels
  • the anodes of the pixels are all located on the surface of the active matrix driving silicon-based backplane, and are respectively connected to the anodes of the driving unit corresponding thereto; the luminescent material layer is located on the anode surface of the LED micro-pixels
  • each of the LED micropixels and each color conversion film is connected by a first conductivity type III-V nitride layer having a small thickness, and Reducing the spacing between adjacent LED micro-pixels to improve the resolution thereof, and reducing the crosstalk between adjacent color conversion films, thereby significantly improving the contrast of the display device structure of the present invention; meanwhile, the display structure of the present invention has High-resolution, high-contrast, high-efficiency luminosity and other characteristics, the device structure is simple and easy to implement.

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Abstract

一种基于III-V族氮化物半导体的LED全彩显示器件结构及制备方法，包括：有源矩阵驱动硅基背板（1），包括若干个驱动单元（11）；LED微像素阵列，位于有源矩阵驱动硅基背板（1）表面，包括若干个LED微像素（2）；各LED微像素（2）均包括发光材料层（21）及阳极（22），各LED微像素（2）的阳极（22）分别与与其对应的驱动单元（11）的阳极（22）相连接；发光材料层（21）位于LED微像素的阳极（22）表面；第一导电类型III-V族氮化物层（3），位于各LED微像素的发光材料层（21）表面，且将各LED微像素（2）相连接；彩色显示所需的颜色转换膜（4），位于第一导电类型的III-V族氮化物层（3）表面。各LED微像素（2）及各颜色转换膜（4）均通过厚度很小的第一导电类型III-V族氮化物层（3）相连接，既可以缩小相邻LED微像素（2）的间距，以提高分辨率，又可以降低相邻颜色转换膜之间的串扰。

Description

基于III-V族氮化物半导体的LED全彩显示器件结构及制备方法 技术领域
本发明属于半导体技术领域，特别是涉及一种基于III-V族氮化物半导体的LED全彩显示器件结构及制备方法。
背景技术
近年来，随着III-V族氮化物(III-Nitride)半导体LED芯片技术和生产工艺的日益进步，超高亮度外延片和芯片生产、封装关键技术的不断突破，其成本也不断降低，基于氮化物(III-Nitride)半导体LED像素的LED显示器以其远超液晶覆硅(liquid-crystal-on-silicon,LCOS)和有机半导体LED(Organic-LED,OLED)的卓越性能，成为LCOS和OLED之外的另一个更具技术竞争力和发展前途的微显示技术。目前，基于氮化物(III-Nitride)半导体LED阵列的显示技术面临的一个挑战是如何实像全彩显示，这主要是由于在现有的技术条件下，还很难在同一单晶衬底上通过外延的方法制造半导体红、绿、蓝LED器件。
在氮化物(III-Nitride)半导体LED彩色显示领域，现有的专利(包括专利申请)技术可以归纳为下面几类：1.采用多颗(至少三颗以上)相互分离并且独立的红、绿、蓝LED芯片通过封装或键和的方式集成到同一硅基电路(薄膜晶体管TFT或单晶硅CMOS)基板上形成二维LED芯片阵列，并单独驱动其中的每一颗芯片，实现彩色显示效果(US09343448，PCT/EP2015/067749，PCT/EP2015/067751，PCT/CN2013/089079,PCT/CN2013/089719)；2.采用多颗相互分离并且独立的白光LED芯片封装在同一电路基板上，形成二维白光LED芯片阵列，然后在白光LED芯片阵列上制作RGB滤光像素图案，每一个红色，绿色或蓝色滤光像素都覆盖在对应的白光LED芯片之上，形成对应的RGB彩色发光像素，相邻的彩色发光像素之间使用不透光的遮挡壁防止串扰，实现彩色显示效果(PCT/CN2014/073773，CN105047681)；3.在单颗LED芯片上制造多个短波长(如蓝光或紫光)微小LED像素器件，这些微小LED像素器件拥有同一个LED芯片衬底，形成在单一芯片上集成的微小LED像素阵列，阵列中每一个微小LED像素都拥有横向电流传导结构，即阴极Ohmic金属接触和阳极Ohmic金属接触都朝向背对LED芯片衬底的一侧，和CMOS硅基背板上的驱动像素的电极面对面通过键合的方式连接，且电流在微小LED像素器件中主要沿着平行于LED芯片衬底表面的方向传输，最后在每一个短波长(如蓝光或紫光)微小LED像素器件的LED芯片衬底上方放置红色或绿色或蓝色颜色转换薄膜，形成对应的红-绿-蓝(RGB)彩色发光像素阵列，实现彩色显示效果(US09047818，US09111464)。
这些现有的氮化物(III-Nitride)LED彩色显示技术由于所采用的结构限制，目前还存在一些重要缺陷和不足：上述的前三类专利技术采用相互分离并且独立的多颗LED芯片，固定到主动驱动的硅基背板电路上，构成最终的彩色发光像素阵列，显示阵列中所有相邻像素的距离很难达到很小(≥5μm)，造成了彩色显示器的低分辨率(≤500ppi)。第四类专利技术在单颗LED芯片上制造多个微小LED像素器件，这些微小LED像素器件拥有同一个LED芯片衬底，像素之间的微小间距可以通过使用半导体微纳加工技术形成狭窄的空气沟槽的方式来实现，像素间距最小可以达到微米甚至亚微米范围(0≤t≤10μm)。但第四类专利技术中所有的微小LED像素器件都分布在共同的LED芯片衬底上，而芯片衬底的厚度无法加工到很薄(≥80μm)，而这一较大厚度的芯片衬底导致两个问题：一方面用于形成彩色显示的红绿蓝或白光转换薄膜需要放置在衬底表面，和微小LED像素器件的发光层距离大于衬底厚度(≥80μm)，每一个像素所发射出来的光在到达颜色转换膜层之前已经扩散到相邻的像素上方，在小间距像素的全彩显示结构里会造成明显的串扰，从而不可避免地造成了彩色显示的低分辨率(≤500ppi)；另一方面，不导电的芯片衬底(如常用的蓝宝石衬底sapphire)在器件结构中要求电流在微小LED像素器件中平行于LED芯片衬底的表面横向传输，造成了较高的器件工作电压(Vf)，降低了显示器中的像素的发光效率。此外，在前述专利的像素驱动电路中，灰度信号暂时寄存于MOS电容或MOS晶体管的栅电容中。这些电容中的电荷泄漏造成驱动晶体管栅压漂移，进而引起流过LED的电流漂移，导致LED亮度变化，从而不能准确还原应有的灰度。
发明内容
鉴于以上所述现有技术的缺点，本发明的目的在于提供一种基于III-V族氮化物半导体的LED全彩显示器件结构及制备方法，用于解决现有技术中由于氮化物(III-Nitride)半导体LED彩色显示器件结构采用相互分离并且独立的多颗LED芯片而存在的所有相邻像素的距离很难达到很小，造成了彩色显示器的低分辨率问题；由于微小LED像素器件拥有同一个较厚的LED芯片衬底而导致的在小间距像素的全彩显示结构里会造成明显的串扰，从而不可避免地造成了彩色显示的低分辨率的问题，以及不导电的芯片衬底在器件结构中要求电流在微小LED像素器件中平行于LED芯片衬底的表面横向传输，造成了较高的器件工作电压，降低了显示器中的像素的发光效率的问题；以及由于灰度信号暂时寄存于MOS电容或MOS晶体管的栅电容中而导致的驱动晶体管栅压漂移，进而引起流过LED的电流漂移，导致LED亮度变化，从而不能准确还原应有的灰度的问题。
为实现上述目的及其他相关目的，本发明提供一种基于III-V族氮化物半导体的LED全彩显示器件结构，所述基于III-V族氮化物半导体的LED全彩显示器件结构包括：
有源矩阵驱动硅基背板，所述有源矩阵驱动硅基背板内包括若干个驱动单元，每个所述驱动单元均包括阳极及公共阴极；
LED微像素阵列，位于所述有源矩阵驱动硅基背板表面，包括若干个LED微像素；所述LED微像素在所述有源矩阵驱动硅基板表面呈阵列分布；各所述LED微像素均包括发光材料层及阳极，各所述LED微像素的阳极均位于所述有源矩阵驱动硅基背板表面，且分别与与其对应的所述驱动单元的阳极相连接；所述发光材料层位于所述LED微像素的所述阳极表面；
第一导电类型III-V族氮化物层，位于各所述LED微像素的发光材料层表面，且将各所述LED微像素相连接；
彩色显示所需的颜色转换膜，位于所述第一导电类型的III-V族氮化物层表面。
作为本发明的基于III-V族氮化物半导体的LED全彩显示器件结构的一种优选方案，所述发光材料层包括量子阱层及第二导电类型III-V族氮化物层，所述第二导电类型III-V族氮化物层位于所述LED微像素的阳极表面，所述量子阱层位于所述第二导电类型III-V族氮化物层表面。
作为本发明的基于III-V族氮化物半导体的LED全彩显示器件结构的一种优选方案，所述驱动单元的数量与所述LED微像素的数量相同。
作为本发明的基于III-V族氮化物半导体的LED全彩显示器件结构的一种优选方案，所述基于III-V族氮化物半导体的LED全彩显示器件结构还包括透明电极层，位于所述第一导电类型III-V族氮化物层表面，且位于所述第一导电类型III-V族氮化物层与所述颜色转换膜之间，构成所述LED微像素阵列的公共阴极，所述透明电极层与有源矩阵驱动硅基背板的公共阴极通过桥联金属相连接。
作为本发明的基于III-V族氮化物半导体的LED全彩显示器件结构的一种优选方案，所述基于III-V族氮化物半导体的LED全彩显示器件结构还包括绝缘透明薄膜，所述绝缘透明薄膜位于所述透明电极层表面，且位于所述透明电极层与所述颜色转换膜之间。
作为本发明的基于III-V族氮化物半导体的LED全彩显示器件结构的一种优选方案，所述基于III-V族氮化物半导体的LED全彩显示器件结构还包括边缘公共阴极及绝缘透明薄膜，所述边缘公共阴极位于所述LED微像素阵列外侧，且位于所述第一导电类型III-V族氮化物层表面，所述边缘公共阴极与所述有源矩阵驱动硅基背板的公共阴极通过桥连金属相连接；所述绝缘透明薄膜位于所述第一导电类型III-V族氮化物层表面，且位于所述第一导电类型 III-V族氮化物层与所述颜色转换膜之间。
作为本发明的基于III-V族氮化物半导体的LED全彩显示器件结构的一种优选方案，所述LED微像素为紫光LED微像素或紫外光LED微像素，所述颜色转换膜包括：红光转换膜、绿光转换膜及蓝光转换膜，所述红光转换膜、所述绿光转换膜及所述蓝光转换膜在所述第一导电类型III-V族氮化物层表面呈阵列分布，且一一对应设置于所述LED微像素正上方。
作为本发明的基于III-V族氮化物半导体的LED全彩显示器件结构的一种优选方案，所述LED微像素为小于480nm短波长光LED微像素，所述颜色转换膜包括：红光滤光膜、绿光滤光膜、蓝光滤光膜及白光转换膜，所述白光转换膜位于所述第一导电类型III-V族氮化物层表面，所述红光滤光膜、所述绿光滤光膜及所述蓝光滤光膜在所述白光转换膜表面呈阵列分布，且一一对应设置于所述LED微像素正上方。
作为本发明的基于III-V族氮化物半导体的LED全彩显示器件结构的一种优选方案，所述白光转换膜的厚度小于5倍相邻所述LED微像素之间的间距。
作为本发明的基于III-V族氮化物半导体的LED全彩显示器件结构的一种优选方案，所述LED微像素为蓝光LED微像素，所述颜色转换膜包括红光转换膜及绿光转换膜，所述红光转换膜及所述绿光转换膜在所述第一导电类型III-V族氮化物层表面呈阵列分布，且一一对应设置于部分所述LED微像素正上方。
作为本发明的基于III-V族氮化物半导体的LED全彩显示器件结构的一种优选方案，还包括钝化层，所述钝化层位于各所述LED微像素中裸露的所述发光材料层的表面及各所述LED微像素之间的所述第一导电类型III-V族氮化物层的表面。
作为本发明的基于III-V族氮化物半导体的LED全彩显示器件结构的一种优选方案，所述驱动单元包括：
开关-驱动晶体管，包括栅极、源极及漏极；所述开关-驱动晶体管的漏极与一电流源相连接，源极与所述LED微像素的阳极相连接；
第一开关晶体管，包括栅极、源极及漏极；所述第一开关晶体管的栅极与同步开关信号线相连接，源极与所述开关-驱动晶体管的栅极相连接；
闩锁寄存器，包括输入端及输出端；所述闩锁寄存器的输入端与脉宽或幅度调制信号相连接，输出端与所述第一开关晶体管的漏极相连接。
作为本发明的基于III-V族氮化物半导体的LED全彩显示器件结构的一种优选方案，所述驱动单元还包括第二开关晶体管，所述第二开关晶体管包括栅极、源极及漏极，所述第二开关晶体管的栅极与地址总线相连接，漏极与数据总线相连接，源极与所述闩锁寄存器的输 入端相连接。
作为本发明的基于III-V族氮化物半导体的LED全彩显示器件结构的一种优选方案，所述闩锁寄存器包括；
第一PMOS晶体管，包括栅极、源极及漏极；所述第一PMOS晶体管的漏极与电源电压相连接；
第二PMOS晶体管，包括栅极、源极及漏极；所述第二PMOS晶体管的漏极与所述电源电压相连接；
第一NMOS晶体管，包括栅极、源极及漏极；所述第一NMOS晶体管的栅极与所述第一PMOS晶体管的栅极相连接，漏极与所述第一PMOS管的源极相连接作为所述闩锁寄存器的输出端，源极接地；
第二NMOS晶体管，包括栅极、源极及漏极；所述第二NMOS晶体管的栅极与所述第二PMOS晶体管的栅极相连接，漏极与所述第二PMOS管的源极相连接作为所述闩锁寄存器的输入端，源极接地。
作为本发明的基于III-V族氮化物半导体的LED全彩显示器件结构的一种优选方案，所述闩锁寄存器包括；
第三NMOS晶体管，包括栅极、源极及漏极；所述第三NMOS晶体管的栅极与所述地址总线相连接，漏极为所述闩锁寄存器的输出端；
电容，一端与所述第三NMOS晶体管的源极相连接作为所述闩锁寄存器的输出端，另一端接地。
本发明还提供一种基于III-V族氮化物半导体的LED全彩显示器件结构的制备方法，所述基于III-V族氮化物半导体的LED全彩显示器件结构的制备方法包括如下步骤：
1)提供生长衬底，在所述生长衬底表面依次生长缓冲层、第一导电类型III-V族氮化物层、量子阱层及第二导电类型III-V族氮化物层；
2)选择性刻蚀所述第二导电类型III-V族氮化物层及所述量子阱层直至裸露出所述第一导电类型III-V族氮化物层，以形成微LED台面阵列；
3)在所述微LED台面阵列中的所述第二导电类型III-V族氮化物层表面形成阳极，所述阳极、所述量子阱层及所述第二导电类型III-V族氮化物层共同构成LED微像素，各所述LED微像素共同形成LED微像素阵列；
4)提供有源矩阵驱动硅基背板，所述有源矩阵驱动硅基背板内包括若干个驱动单元，每个所述驱动单元均包括阳极及公共阴极；
5)将步骤3)得到的结构键合于所述有源矩阵驱动硅基背板表面，所述LED微像素的阳极表面为键合面，且所述LED微像素的阳极与所述驱动单元的阳极相连接；
6)去除所述生长衬底；
7)在所述第一导电类型III-V族氮化物层表面形成彩色显示所需的颜色转换膜。
作为本发明的基于III-V族氮化物半导体的LED全彩显示器件结构的制备方法的一种优选方案，步骤2)与步骤3)之间还包括如下步骤：
在步骤2)得到的结构表面形成钝化层，所述钝化层覆盖各所述LED微像素的表面及各所述LED微像素之间及所述LED像素微阵列外侧的所述第一导电类型III-V族氮化物层的表面；
在各所述LED微像素中所述第二导电类型III-V族氮化物顶面及所述LED微像素阵列外侧的所述钝化层中形成开口，所述开口暴露出所述第二导电类型III-V族氮化物层及位于所述LED微像素阵列外侧的所述第一导电类型的III-V族氮化物层。
作为本发明的基于III-V族氮化物半导体的LED全彩显示器件结构的制备方法的一种优选方案，步骤4)中，所述驱动单元包括：
开关-驱动晶体管，包括栅极、源极及漏极；所述开关-驱动晶体管的漏极与一电流源相连接，源极与所述LED微像素的阳极相连接；
第一开关晶体管，包括栅极、源极及漏极；所述第一开关晶体管的栅极与同步开关信号线相连接，源极与所述开关-驱动晶体管的栅极相连接；
闩锁寄存器，包括输入端及输出端；所述闩锁寄存器的输入端与脉宽或幅度调制信号相连接，输出端与所述第一开关晶体管的漏极相连接。
作为本发明的基于III-V族氮化物半导体的LED全彩显示器件结构的制备方法的一种优选方案，所述驱动单元还包括第二开关晶体管，所述第二开关晶体管包括栅极、源极及漏极，所述第二开关晶体管的栅极与地址总线相连接，漏极与数据总线相连接，源极与所述闩锁寄存器的输入端相连接。
作为本发明的基于III-V族氮化物半导体的LED全彩显示器件结构的制备方法的一种优选方案，所述闩锁寄存器包括；
第一PMOS晶体管，包括栅极、源极及漏极；所述第一PMOS晶体管的漏极与电源电压相连接；
第二PMOS晶体管，包括栅极、源极及漏极；所述第二PMOS晶体管的漏极与所述电源电压相连接；
第一NMOS晶体管，包括栅极、源极及漏极；所述第一NMOS晶体管的栅极与所述第一PMOS晶体管的栅极相连接，漏极与所述第一PMOS管的源极相连接作为所述闩锁寄存器的输出端，源极接地；
第二NMOS晶体管，包括栅极、源极及漏极；所述第二NMOS晶体管的栅极与所述第二PMOS晶体管的栅极相连接，漏极与所述第二PMOS管的源极相连接作为所述闩锁寄存器的输入端，源极接地。
作为本发明的基于III-V族氮化物半导体的LED全彩显示器件结构的制备方法的一种优选方案，所述闩锁寄存器包括；
第三NMOS晶体管，包括栅极、源极及漏极；所述第三NMOS晶体管的栅极与所述地址总线相连接，漏极为所述闩锁寄存器的输出端；
电容，一端与所述第三NMOS晶体管的源极相连接作为所述闩锁寄存器的输出端，另一端接地。
作为本发明的基于III-V族氮化物半导体的LED全彩显示器件结构的制备方法的一种优选方案，步骤5)包括以下步骤：
5-1)刻蚀所述有源矩阵驱动硅基背板以裸露出所述驱动单元的阳极及公共阴极；
5-2)在所述驱动单元的阳极表面形成凸块底层金属层及键合焊柱；
5-3)将步骤3)得到的结构通过倒装焊经由所述凸块底层金属层及键合焊柱键合于所述有源矩阵驱动硅基背板表面。
作为本发明的基于III-V族氮化物半导体的LED全彩显示器件结构的制备方法的一种优选方案，步骤6)与步骤7)之间还包括如下步骤：
在所述第一导电类型III-V族氮化物层表面形成透明电极层，构成所述LED微像素阵列的公共阴极；步骤7)中，所述颜色转换膜形成于所述透明电极层表面。
作为本发明的基于III-V族氮化物半导体的LED全彩显示器件结构的制备方法的一种优选方案，步骤6)与步骤7)之间还包括如下步骤：
在所述第一导电类型III-V族氮化物层表面形成透明电极层，构成所述LED微像素阵列的公共阴极；
在所述透明电极层表面形成绝缘透明薄膜；步骤7)中，所述颜色转换膜形成于所述绝缘透明薄膜表面。
作为本发明的基于III-V族氮化物半导体的LED全彩显示器件结构的制备方法的一种优选方案，步骤6)与步骤7)之间还包括如下步骤：
在所述LED微像素阵列外侧的所述第一导电类型的III-V族氮化物层表面形成边缘公共阴极；
在所述第一导电类型III-V族氮化物层表面形成绝缘透明薄膜；步骤7)中，所述颜色转换膜形成于所述绝缘透明薄膜表面。
作为本发明的基于III-V族氮化物半导体的LED全彩显示器件结构的制备方法的一种优选方案，所述LED微像素为紫光LED微像素或紫外光LED微像素，步骤7)中形成的所述颜色转换膜包括：红光转换膜、绿光转换膜及蓝光转换膜，所述红光转换膜、所述绿光转换膜及所述蓝光转换膜在所述第一导电类型III-V族氮化物层表面呈阵列分布，且一一对应设置于所述LED微像素正上方。
作为本发明的基于III-V族氮化物半导体的LED全彩显示器件结构的制备方法的一种优选方案，所述LED微像素为小于480nm短波长光LED微像素，步骤7)中形成的所述颜色转换膜包括：红光滤光膜、绿光滤光膜、蓝光滤光膜及白光转换膜，所述白光转换膜位于所述第一导电类型III-V族氮化物层表面，所述红光滤光膜、所述绿光滤光膜及所述蓝光滤光膜在所述白光转换膜表面呈阵列分布，且一一对应设置于所述LED微像素正上方。
作为本发明的基于III-V族氮化物半导体的LED全彩显示器件结构的制备方法的一种优选方案，所述白光转换膜的厚度小于5倍相邻所述LED微像素之间的间距。
作为本发明的基于III-V族氮化物半导体的LED全彩显示器件结构的制备方法的一种优选方案，所述LED微像素为蓝光LED微像素，步骤7)中形成的所述颜色转换膜包括红光转换膜及绿光转换膜，所述红光转换膜及所述绿光转换膜在所述第一导电类型III-V族氮化物层表面呈阵列分布，且一一对应设置于部分所述LED微像素正上方。
如上所述，本发明的基于III-V族氮化物半导体的LED全彩显示器件结构及制备方法，具有以下有益效果：本发明的基于III-V族氮化物半导体的LED全彩显示器件结构中各LED微像素及各颜色转换膜均通过厚度很小的第一导电类型III-V族氮化物层相连接，既可以缩小相邻LED微像素之间的间距，以提高其分辨率，又可以降低相邻颜色转换膜之间的串扰，从而显著提高本发明的显示器件结构的对比度；同时，本发明的显示器结构具有高分辨率、高对比度、高效发光率等特性，器件结构的制备工艺简单且易于实现。
附图说明
图1及图2显示为本发明实施例一中提供的基于III-V族氮化物半导体的LED全彩显示器件结构的截面结构示意图。
图3显示为图1中A区域的放大结构示意图。
图4显示为具有衬底的LED全彩显示器件结构中发光材料层发出的光经由外延层和衬底折射后横向扩展的示意图。
图5显示为本发明实施例一中提供的基于III-V族氮化物半导体的LED全彩显示器件结构中有源矩阵驱动硅基背板中的驱动单元的电路图。
图6及图7显示为本发明实施例一中提供的基于III-V族氮化物半导体的LED全彩显示器件结构中有源矩阵驱动硅基背板中的驱动单元内的闩锁寄存器的电路图。
图8显示为本发明实施例二中提供的基于III-V族氮化物半导体的LED全彩显示器件结构的制备方法的流程图。
图9至图20显示为本发明实施例二中提供的基于III-V族氮化物半导体的LED全彩显示器件结构的制备方法各步骤中的截面结构示意图。
元件标号说明
1       有源矩阵驱动硅基背板
11      驱动单元
111     开关-驱动晶体管
112     第一开关晶体管
113     闩锁寄存器
1131    第一PMOS晶体管
1132    第二PMOS晶体管
1133    第一NMOS晶体管
1134    第二NMOS晶体管
1135    第三NMOS晶体管
1136    电容
114     第二开关晶体管
2       LED微像素
21      发光材料层
211     量子阱层
212     第二导电类型III-V氮化物层
22      阳极
3       第一导电类型III-V族氮化物层
4       颜色转换膜
41      红光转换膜
42      绿光转换膜
43      蓝光转换膜
44      白光转换膜
45      红光滤光膜
46      绿光滤光膜
47      蓝光滤光膜
5       透明电极层
51      桥联金属
6       绝缘透明薄膜
7       钝化层
8       生长衬底
9       凸块底层金属层及键合焊柱
S1～S7  步骤
具体实施方式
以下通过特定的具体实例说明本发明的实施方式，本领域技术人员可由本说明书所揭露的内容轻易地了解本发明的其他优点与功效。本发明还可以通过另外不同的具体实施方式加以实施或应用，本说明书中的各项细节也可以基于不同观点与应用，在没有背离本发明的精神下进行各种修饰或改变。
请参阅图1至图20。需要说明的是，本实施例中所提供的图示仅以示意方式说明本发明的基本构想，虽图示中仅显示与本发明中有关的组件而非按照实际实施时的组件数目、形状及尺寸绘制，其实际实施时各组件的型态、数量及比例可为一种随意的改变，且其组件布局形态也可能更为复杂。
实施例一
请参阅图1至图3，本发明提供一种基于III-V族氮化物半导体的LED全彩显示器件结构，所述基于III-V族氮化物半导体的LED全彩显示器件结构包括：有源矩阵驱动硅基背板1，所述有源矩阵驱动硅基背板1内包括若干个驱动单元11，每个所述驱动单元11均包括阳 极(未示出)及公共阴极(未示出)；LED微像素阵列，所述LED微像素阵列位于所述有源矩阵驱动硅基背板1表面，包括若干个LED微像素2；所述LED微像素2在所述有源矩阵驱动硅基板1表面呈阵列分布；各所述LED微像素2均包括发光材料层21及阳极22，各所述LED微像素2的阳极22均位于所述有源矩阵驱动硅基背板1表面，且分别与与其对应的所述驱动单元11的阳极相连接；所述发光材料层21位于所述LED微像素2的阳极22表面；第一导电类型III-V族氮化物层3，所述第一导电类型III-V族氮化物层3位于各所述LED微像素2的发光材料层21表面，且将各所述LED微像素2相连接；彩色显示所需的颜色转换膜4，所述颜色转换膜4位于所述第一导电类型的III-V族氮化物层3表面。
作为示例，所述LED微像素2及所述第一导电类型III-V族氮化物层3是通过倒装焊工艺键合在所述有源矩阵驱动硅基背板1的表面，所述LED微像素2的阳极22经由凸块底层金属层及键合焊柱9键合于所述有源矩阵驱动硅基背板1的表面。当然，在其他示例中，所述LED微像素2的阳极22还可以通过焊柱、共晶键合或各向异性导电胶键合于所述有源矩阵驱动硅基背板1的表面。键合所使用的金属材料(本实施例中所述凸块底层金属层及键合焊柱9的材料)可以包括但不仅限于Au，Al，Ag，Pb，AuSn,AgSn,AgIn,Cu和In。
对于现有技术中的第一导电类型的III-V族氮化物层生长的生长衬底保留的技术方案来说，由于LED微像素发光在第一导电类型的III-V族氮化物层和生长衬底(未示出)中的横向发散距离随着二者厚度的变化公式为：
Figure PCTCN2017119025-appb-000001
其中 ，l 横向表示LED微像素发光的横向扩展半径，θ表示LED微像素发光在III-V族氮化物层里面的半角宽，t 外延层和t 衬底分别表示III-V族氮化物层的厚度和生长衬底的厚度，n 外延层和n 衬底分别表示III-V族氮化物层和衬底的折射系数。由上式可知，当III-V族氮化物层的厚度远小于生长衬底的厚度时，去除生长衬底可以大幅度降低由于LED微像素发光的横向扩展而在颜色转换膜上引起的红绿蓝发光像素之间的串扰，如图4所示。本发明的基于III-V族氮化物半导体的LED全彩显示器件结构中各LED微像素2及各颜色转换膜4均通过厚度很小的第一导电类型III-V族氮化物层3相连接，既可以缩小相邻LED微像素2之间的间距，以提高其分辨率，又可以降低相邻颜色转换膜4之间的串扰，从而显著提高本发明的显示器件结构的对比度。
作为示例，所述LED微像素2呈微台面结构，所述LED微像素2可以为方形微台面结构、矩形微台面结构、圆形微台面结构或六角形微台面结构；所述LED微像素2的高度大于 所述发光材料层21的高度。在现有的LED全彩显示器件结构中，由于所有LED微像素之间通过空气槽(即相邻LED微像素之间的间隙)和周围的LED微像素隔离绝缘，空气槽的宽度限制了相邻微像素之间的最小距离，进而限制了LED像素阵列的密度，从而限制了LED芯片上彩色显示器件的分辨率。而本发明的器件结构中所有的所述LED微像素2均位于同一所述第一导电类型III-V族氮化物层3表面，并没有共用的生长衬底，即本发明的器件结构在现有的器件结构的基础上剥离了生长衬底，空气槽的深度(亦即所述发光材料层21的高度)仅需略大于所述发光材料层21的厚度之和(0.1～3um)，远小于所述第一导电类型III-V族氮化物层3所需的空气槽深度(5～20um)，同时，又隔离层的宽度随深度的减小大幅度降低，所以本发明的LED全彩显示器件结构中的所述LED微像素2的密度远高于现有技术中采用完全分离而独立的LED像素结构的彩色显示器。
作为示例，如图3所示，所述发光材料层21包括量子阱层211及第二导电类型III-V族氮化物层212，所述第二导电类型III-V族氮化物层212位于所述LED微像素2的阳极22表面，所述量子阱层211位于所述第二导电类型III-V族氮化物层212表面。所述第二导电类型与所述第一导电类型为不同的导电类型，即所述第一导电类型III-V族氮化物层3为P型III-V族氮化物层时，所述第二导电类型III-V族氮化物层212为N型III-V族氮化物层；所述第一导电类型III-V族氮化物层3为N型III-V族氮化物层时，所述第二导电类型III-V族氮化物层212为P型III-V族氮化物层。
作为示例，所述第一导电类型III-V族氮化物层3的厚度小于或等于20um。所述第一导电类型III-V族氮化物层3及所述第二导电类型氮化物层212的材料均可以为但不仅限于GaN、AlN、AlGaN、InGaN、InAlN或InAlGaN。
作为示例，所述LED微像素2的阳极22的材料可以为但不仅限于Cr、Ni、Au、Ag、Al、Pt、ITO、SnO或ZnO等欧姆电极材料。所述LED微像素2的厚度可以为但不仅限于0.001～50um。
作为示例，所述驱动单元11的数量与所述LED微像素2的数量相同。
在一示例中，所述基于III-V族氮化物半导体的LED全彩显示器件结构还包括透明电极层5，所述透明电极层5位于所述第一导电类型III-V族氮化物层3表面，且位于所述第一导电类型III-V族氮化物3与所述颜色转换膜4之间，构成所述LED微像素阵列的公共阴极，所述透明电极层5与有源矩阵驱动硅基背板1的公共阴极通过桥联金属51相连接；所述透明电极层5作为部分或全部所述LED微像素2的公共阴极。所述透明电极层5可以为透明或半透明的欧姆薄膜电极，所述透明电极层5的材料可以为但不仅限于Cr、Ni、Au、Ag、Al、 Pt、ITO、SnO、ZnO或石墨烯等欧姆电极材料。所述透明电极层5可以通过桥联金属51与所述有源矩阵驱动硅基背板中的公共阴极相连接。通过在所述LED全彩显示器件结构内设置所述透明电极层5作为所述LED微像素2的公共阴极，并将所述透明电极层5与所述有源矩阵驱动硅基背板1的公共阴极相连接，使得所述LED微像素2中的驱动电流可以沿垂直于所述第一导电类型III-V族氮化物层3的方向传输，实现所述LED微像素2中的电流垂直传输，增强电流的均匀性，从而解决了目前共阴极电流侧向传导造成的电流分布不均、电阻大等问题。
在另一示例中，所述基于III-V族氮化物半导体的LED全彩显示器件结构在包括有所述透明电极层5的基础上还包括绝缘透明薄膜(未示出)，所述绝缘透明薄膜位于所述透明电极层5表面，且位于所述透明电极层5与所述颜色转换膜4之间。所述绝缘透明薄膜的材料可以包括无机介质材料和有机分子材料。
在又一示例，所述基于III-V族氮化物半导体的LED全彩显示器件结构还包括边缘公共阴极(未示出)及绝缘透明薄膜(未示出)，所述边缘公共阴极位于所述LED微像素阵列外侧，且位于所述第一导电类型III-V族氮化物层3表面，所述边缘公共阴极与所述有源矩阵驱动硅基背板1的公共阴极通过桥连金属51相连接；即相比于前述示例，该示例中所述基于III-V族氮化物半导体的LED全彩显示器件结构只是包括所述边缘公共阴极及绝缘透明薄膜，并不包括所述透明电极层5，所述绝缘透明薄膜位于所述第一导电类型III-V族氮化物层3表面，且位于所述第一导电类型III-V族氮化物层3与所述颜色转换膜4之间。
在一示例中，如图1所示，所述LED微像素2为紫光LED微像素或紫外光LED微像素，所述LED微像素2发出短于440nm的紫光或紫外光；所述颜色转换膜4包括：红光转换膜41、绿光转换膜42及蓝光转换膜43，所述红光转换膜41、所述绿光转换膜42及所述蓝光转换膜43在所述第一导电类型III-V族氮化物层3表面呈阵列分布，且一一对应设置于所述LED微像素2正上方；即所述红光转换膜41、所述绿光转换膜42及所述蓝光转换膜43以微区阵列的方式在所述第一导电类型III-V族氮化物层3表面周期性交替排布，每一个所述微区阵列的尺寸与所述LED微像素2的尺寸一致或相近，且包含一种所述颜色转换膜。所述LED微像素2发出的紫光或紫外光激发所述红光转换膜41、所述绿光转换膜42及所述蓝光转换膜43分别发出全彩显示所需的红光、绿光及蓝光。
作为示例，所述红光转换膜41、所述绿光转换膜42及所述蓝光转换膜43的材料包括无机荧光粉和磷光材料、有机染料、有机荧光或磷光材料以及无机半导体纳米材料，可以将紫光或紫外光转化成红光、绿光和蓝光。
在另一示例中，所述LED微像素2为蓝光LED微像素，所述LED微像素2发出波长为440nm～490nm的蓝光；所述颜色转换膜4包括红光转换膜41及绿光转换膜42，所述红光转换膜41及所述绿光转换膜42在所述第一导电类型III-V族氮化物层3表面呈阵列分布，且一一对应设置于部分所述LED微像素2正上方，所述红光转换膜41及所述绿光转换膜42以微区阵列的方式在所述第一导电类型III-V族氮化物层3表面周期性交替排布，每一个所述微区阵列的尺寸与所述LED微像素2的尺寸一致或相近，每一个所述红光转换膜41及所述绿光转换膜42均对应一个所述LED微像素2。所述LED微像素2发出的蓝光激发所述红光转换膜41及所述绿光转换膜42分别发出红光和绿光，全彩显示所需的蓝光由所述LED微像素2发出的蓝光提供。需要说明的是，在该示例中，所述红光转换膜41及所述绿光转换膜42位于部分所述LED微像素2正上方，即部分所述LED微像素2的上方没有所述红光转换膜41或所述绿光转换膜42。
作为示例，所述红光转换膜41及所述绿光转换膜42的材料包括无机荧光粉和磷光材料、有机染料、有机荧光或磷光材料以及无机半导体纳米材料，可以将蓝光转化成红光及绿光。
在又一示例中，如图2所示，所述LED微像素2为小于480nm短波长光LED微像素，所述LED微像素2发出波长短于480nm的短波长光；所述颜色转换膜4包括：红光滤光膜45、绿光滤光膜46、蓝光滤光膜47及白光转换膜44，所述白光转换膜44位于所述第一导电类型III-V族氮化物层3表面，所述红光滤光膜45、所述绿光滤光膜46及所述蓝光滤光膜47在所述白光转换膜44表面呈阵列分布，且一一对应设置于所述LED微像素2正上方；即所述红光滤光膜45、所述绿光滤光膜46及所述蓝光滤光膜47以微区阵列的方式在所述白光转换膜22表面周期性交替排布，每一个所述微区阵列的尺寸与所述LED微像素2的尺寸一致或相近，且包含一种所述颜色转换膜。
作为示例，所述白光转换膜44的材料包括无机荧光粉和磷光材料、有机染料、有机荧光或磷光材料以及无机半导体纳米材料，在被蓝紫光或紫外光照射时，可以通过颜色转换和混合，将透射光转化为白光；所述红光滤光膜45、所述绿光滤光膜46及所述蓝光滤光膜47的材料包括有机分子材料和介质膜材料，可以选择性吸收或反射各种波长的光，透射所需的红、绿、蓝色光。
作为示例，所述白光转换膜44的厚度小于5倍相邻所述LED微像素2之间的间距，以便减小各所述LED微像素2之间的串扰。
作为示例，如图3所示，所述LED全彩显示器件结构还包括钝化层7，所述钝化层7位于各所述LED微像素2中裸露的所述发光材料层21的表面及各所述LED微像素2之间的所 述第一导电类型III-V族氮化物层3的表面。所述钝化层7的材料可以为但不仅限于SiO 2，所述钝化层7的厚度可以为但不仅限于0.1～2000nm。
作为示例，如图5所示，所述驱动单元11包括：开关-驱动晶体管111，所述开关-驱动晶体管111包括栅极、源极及漏极；所述开关-驱动晶体管111的漏极与一电流源115相连接，源极与所述LED微像素的阳极相连接；第一开关晶体管112，所述第一开关管112包括栅极、源极及漏极；所述第一开关晶体管112的栅极与同步开关信号线相连接，源极与所述开关-驱动晶体管111的栅极相连接；闩锁寄存器113，所述闩锁寄存器113包括输入端及输出端；所述闩锁寄存器113的输入端与脉宽或幅度调制信号相连接，输出端与所述第一开关晶体管112的漏极相连接。
作为示例，所述驱动单元11还包括第二开关晶体管114，所述第二开关晶体管114包括栅极、源极及漏极，所述第二开关晶体管114的栅极与地址总线相连接，漏极与数据总线相连接，源极与所述闩锁寄存器113的输入端相连接。来自所述数据总线的灰度调制信号寄存于所述闩锁寄存器113内，并传输至所述开关-驱动晶体管111的栅极，控制流过所述LED微像素2的电流导通时间或强度，形成灰度。
在一示例中，如图6所示，所述闩锁寄存器113包括；第一PMOS晶体管1131，所述第一PMOS晶体管1131包括栅极、源极及漏极；所述第一PMOS晶体管1131的漏极与电源电压VDD相连接；第二PMOS晶体管1132，所述第二PMOS晶体管1132包括栅极、源极及漏极；所述第二PMOS晶体管1132的漏极与所述电源电压VDD相连接；第一NMOS晶体管1133，所述第一NMOS晶体管1133包括栅极、源极及漏极；所述第一NMOS晶体管1133的栅极与所述第一PMOS晶体管1131的栅极相连接，漏极与所述第一PMOS管1131的源极相连接作为所述闩锁寄存器113的输出端，所述第一NMOS晶体管1133的源极接地；第二NMOS晶体管1134，所述第二NMOS晶体管1134包括栅极、源极及漏极；所述第二NMOS晶体管1134的栅极与所述第二PMOS晶体管1132的栅极相连接，漏极与所述第二PMOS管1132的源极相连接作为所述闩锁寄存器的输入端，所述第二NMOS晶体管1134的源极接地。
在另一示例中，所述闩锁寄存器113包括；第三NMOS晶体管1135，所述第三NMOS晶体管1135包括栅极、源极及漏极；所述第三NMOS晶体管1135的栅极与所述地址总线相连接，所述第三NMOS晶体管1135的漏极为所述闩锁寄存器113的输出端；电容1136，所述电容1136一端与所述第三NMOS晶体管1135的源极相连接作为所述闩锁寄存器113的输出端，另一端接地。
本发明的所述LED全彩显示器件结构中，所述LED微像素2通过紧密排列形成高密度 阵列，每个所述LED微像素2的工作电压或电流都由与其通过阳极连接的所述有源矩阵驱动硅基背板1中的驱动单元11进行控制，对所述LED微像素2发光的持续时间或光强进行调制，实现每一个所述LED微像素2的灰度控制，而每个所述LED微像素2的短波长发光又进一步激发与其对应的所述颜色转换膜4，在器件表面形成周期性的红-绿-蓝像素发光的空间分布，相邻的红-绿-蓝像素以不同的灰度组合，从而在所述LED全彩显示器件表面产生各种彩色发光图案。
实施例二
请参阅图8，本发明还提供一种基于III-V族氮化物半导体的LED全彩显示器件结构的制备方法，所述制备方法适于制备实施例一中所述的LED全彩显示器件结构，所述基于III-V族氮化物半导体的LED全彩显示器件结构的制备方法包括如下步骤：
1)提供生长衬底，在所述生长衬底表面依次生长缓冲层、第一导电类型III-V族氮化物层、量子阱层及第二导电类型III-V族氮化物层；
2)选择性刻蚀所述第二导电类型III-V族氮化物层及所述量子阱层直至裸露出所述第一导电类型III-V族氮化物层，以形成微LED台面阵列；
3)在所述微LED台面阵列中的所述第二导电类型III-V族氮化物层表面形成阳极，所述阳极、所述量子阱层及所述第二导电类型III-V族氮化物层共同构成LED微像素，各所述LED微像素共同形成LED微像素阵列；
4)提供有源矩阵驱动硅基背板，所述有源矩阵驱动硅基背板内包括若干个驱动单元，每个所述驱动单元均包括阳极及公共阴极；
5)将步骤3)得到的结构键合于所述有源矩阵驱动硅基背板表面，所述LED微像素的阳极表面为键合面，且所述LED微像素的阳极与所述驱动单元的阳极相连接；
6)去除所述生长衬底；
7)在所述第一导电类型III-V族氮化物层表面形成彩色显示所需的颜色转换膜。
在步骤1)中，请参阅图8中的S1步骤及图9，提供生长衬底8，在所述生长衬底8表面依次生长缓冲层(未示出)、第一导电类型III-V族氮化物层3、量子阱层211及第二导电类型III-V族氮化物层212。
作为示例，所述生长衬底8可以包括但不仅限于蓝宝石衬底、SiC衬底或Si衬底。
作为示例，所述第一导电类型III-V族氮化物层3的厚度小于或等于20um。所述第一导电类型III-V族氮化物层3及所述第二导电类型氮化物层212的材料均可以为但不仅限于GaN、AlN、AlGaN、InGaN、InAlN或InAlGaN。
作为示例，所述第二导电类型与所述第一导电类型为不同的导电类型，即所述第一导电类型III-V族氮化物层3为P型III-V族氮化物层时，所述第二导电类型III-V族氮化物层212为N型III-V族氮化物层；所述第一导电类型III-V族氮化物层3为N型III-V族氮化物层时，所述第二导电类型III-V族氮化物层212为P型III-V族氮化物层。
在步骤2)中，请参阅图8中的S2步骤及图10至图11，选择性刻蚀所述第二导电类型III-V族氮化物层212及所述量子阱层211直至裸露出所述第一导电类型III-V族氮化物层3，以形成微LED台面阵列，同时在所述微LED台面阵列外侧形成裸露出所述第一导电类型III-V族氮化物层3的凹槽。
作为示例，可以采用常规刻蚀工艺刻蚀所述第二导电类型III-V族氮化物层212及所述量子阱层211以形成所述微LED台面阵列，刻蚀工艺为本领域人员所熟知，此处不再累述。
作为示例，所述LED台面阵列中各微台面可以为方形微台面结构、矩形微台面结构、圆形微台面结构或六角形微台面结构，优选地，本实施例中，所述微台面为矩形微台面结构。各所述微台面的尺寸及相邻所述微台面之间的间距可以根据实际需要进行设定，优选地，本实施例中，各所述微台面的尺寸为10um×10um，相邻所述微台面之间的间距2um。当然，在其他示例中，各所述微台面的尺寸及相邻所述微台面之间的间距还可以设定为其他值，并不以此为限。
作为示例，如图11所示，步骤2)之后还包括如下步骤：
在步骤2)得到的结构表面形成钝化层7，所述钝化层7覆盖各所述LED微像素2的表面及各所述LED微像素2之间及所述LED微像素阵列外侧的所述第一导电类型III-V族氮化物层3的表面；
在各所述LED微像素中所述第二导电类型III-V族氮化物212顶面及所述LED微像素阵列外侧的所述钝化层7中形成开口，所述开口暴露出所述第二导电类型III-V族氮化物层212及位于所述LED微像素阵列外侧的所述第一导电类型的III-V族氮化物层3。
在步骤3)中，请参阅图8中的S3步骤及图10至图11，在所述微LED台面阵列中的所述第二导电类型III-V族氮化物层212表面形成阳极22，所述阳极22、所述量子阱层211及所述第二导电类型III-V族氮化物层212共同构成LED微像素2，各所述LED微像素2共同形成LED微像素阵列。
在一示例中，可以如图10中所示，可以借助光刻刻蚀工艺直接在所述第二导电类型III-V族氮化物层212表面形成所述阳极22；在另一示例中，可以如图11中所示，在所述开口内淀积金属，并去除不需要的金属以得到所述阳极22。
作为示例，所述LED微像素2的阳极22的材料可以为Cr、Ni、Au、Ag、Al、Pt、ITO、SnO或ZnO等欧姆电极材料中的至少一种；所述LED微像素2的厚度可以为但不仅限于0.001～50um；优选地，本实施例中，所述LED微像素2的阳极22的材料为Cr/Cu或Ni/Au，厚度为1～2um。
在步骤4)中，请参阅图8中的S4步骤及图5、图6、图7及图12，提供有源矩阵驱动硅基背板1，所述有源矩阵驱动硅基背板1内包括若干个驱动单元11，每个所述驱动单元11均包括阳极及公共阴极。
作为示例，如图5所示，所述驱动单元11包括：开关-驱动晶体管111，所述开关-驱动晶体管111包括栅极、源极及漏极；所述开关-驱动晶体管111的漏极与一电流源115相连接，源极与所述LED微像素的阳极相连接；第一开关晶体管112，所述第一开关管112包括栅极、源极及漏极；所述第一开关晶体管112的栅极与同步开关信号线相连接，源极与所述开关-驱动晶体管111的栅极相连接；寄存器113，所述寄存器113包括输入端及输出端；所述寄存器113的输入端与脉宽或幅度调制信号相连接，输出端与所述第一开关晶体管112的漏极相连接。
作为示例，所述驱动单元11还包括第二开关晶体管114，所述第二开关晶体管114包括栅极、源极及漏极，所述第二开关晶体管114的栅极与地址总线相连接，漏极与数据总线相连接，源极与所述寄存器113的输入端相连接。来自所述数据总线的灰度调制信号寄存于所述闩锁寄存器113内，并传输至所述开关-驱动晶体管111的栅极，控制流过所述LED微像素2的电流导通时间或强度，形成灰度。
在一示例中，如图6所示，所述寄存器113是闩锁寄存器,包括；第一PMOS晶体管1131，所述第一PMOS晶体管1131包括栅极、源极及漏极；所述第一PMOS晶体管1131的漏极与电源电压VDD相连接；第二PMOS晶体管1132，所述第二PMOS晶体管1132包括栅极、源极及漏极；所述第二PMOS晶体管1132的漏极与所述电源电压VDD相连接；第一NMOS晶体管1133，所述第一NMOS晶体管1133包括栅极、源极及漏极；所述第一NMOS晶体管1133的栅极与所述第一PMOS晶体管1131的栅极相连接，漏极与所述第一PMOS管1131的源极相连接作为所述闩锁寄存器113的输出端，所述第一NMOS晶体管1133的源极接地；第二NMOS晶体管1134，所述第二NMOS晶体管1134包括栅极、源极及漏极；所述第二NMOS晶体管1134的栅极与所述第二PMOS晶体管1132的栅极相连接，漏极与所述第二PMOS管1132的源极相连接作为所述闩锁寄存器的输入端，所述第二NMOS晶体管1134的源极接地。
在另一示例中，所述寄存器113包括；第三NMOS晶体管1135，所述第三NMOS晶体管1135包括栅极、源极及漏极；所述第三NMOS晶体管1135的栅极与所述地址总线相连接，所述第三NMOS晶体管1135的漏极为所述闩锁寄存器113的输出端；电容1136，所述电容1136一端与所述第三NMOS晶体管1135的源极相连接作为所述闩锁寄存器113的输出端，另一端接地。
在步骤5)中，请参阅图8中的S5步骤及图13，将步骤3)得到的结构键合于所述有源矩阵驱动硅基背板1表面，所述LED微像素2的阳极22表面为键合面，且所述LED微像素2的阳极22与所述驱动单元11的阳极相连接。
作为示例，步骤5)包括以下步骤：
5-1)刻蚀所述有源矩阵驱动硅基背板1以裸露出所述驱动单元11的阳极及公共阴极；
5-2)在所述驱动单元11的阳极表面形成凸块底层金属层及键合焊柱9；
5-3)将步骤3)得到的结构通过倒装焊经由所述凸块底层金属层及键合焊柱9键合于所述有源矩阵驱动硅基背板1表面。
作为示例，在其他示例中，步骤3)得到的结构还可以通过焊柱、共晶键合或各向异性导电胶等键合于所述有源矩阵驱动硅基背板1表面。
在步骤6)中，请参阅图8中的S6步骤及图14，去除所述生长衬底8。
作为示例，可以采用化学腐蚀工艺、激光剥离工艺或等离子体刻蚀工艺去除所述生长衬底8。
在一示例中，如图15及图16所示，步骤6)之后还包括如下步骤：
在所述第一导电类型III-V族氮化物层3表面形成透明电极层5，如图15所示，所述透明电极层5构成所述LED微像素阵列的公共阴极；并将所述透明电极层5通过连线结构51与所述有源矩阵驱动硅基背板1的公共阴极相连接，如图16所示；此时，后续步骤7)中，所述颜色转换膜形成于所述透明电极层5表面。
在一示例中，如图17所示，步骤6)之后还包括如下步骤：
在所述第一导电类型III-V族氮化物层3表面形成透明电极层5，所述透明电极层5构成所述LED微像素阵列的公共阴极；
在所述透明电极层5表面形成绝缘透明薄膜6；此时，后续步骤7)中，所述颜色转换膜形成于所述绝缘透明薄6膜表面。
在又一示例中，如图18所示，步骤6)之后还包括如下步骤：
在所述LED微像素阵列外侧的所述第一导电类型的III-V族氮化物层3表面形成边缘公 共阴极(未示出)；
在裸露的所述第一导电类型III-V族氮化物层3表面形成绝缘透明薄膜(未示出)；此时，后续步骤7)中，所述颜色转换膜形成于所述绝缘透明薄膜6表面。
在步骤7)中，请参阅图8中的S7步骤及图19至图20，在所述第一导电类型III-V族氮化物层3表面形成彩色显示所需的颜色转换膜4。
需要说明的是，图19及图20以所述第一导电类型III-V族氮化物层3表面形成有透明电极层5作为示例，即所述颜色转换膜4形成于所述透明电极层5的表面。
在一示例中，如图19所示，所述LED微像素2为紫光LED微像素或紫外光LED微像素，所述LED微像素2发出短于440nm的紫光或紫外光；所述颜色转换膜4包括：红光转换膜41、绿光转换膜42及蓝光转换膜43，所述红光转换膜41、所述绿光转换膜42及所述蓝光转换膜43在所述第一导电类型III-V族氮化物层3表面呈阵列分布，且一一对应设置于所述LED微像素2正上方；即所述红光转换膜41、所述绿光转换膜42及所述蓝光转换膜43以微区阵列的方式在所述第一导电类型III-V族氮化物层3表面周期性交替排布，每一个所述微区阵列的尺寸与所述LED微像素2的尺寸一致或相近，且包含一种所述颜色转换膜。所述LED微像素2发出的紫光或紫外光激发所述红光转换膜41、所述绿光转换膜42及所述蓝光转换膜43分别发出全彩显示所需的红光、绿光及蓝光。
作为示例，所述红光转换膜41、所述绿光转换膜42及所述蓝光转换膜43的材料包括无机荧光粉和磷光材料、有机染料、有机荧光或磷光材料以及无机半导体纳米材料，可以将紫光或紫外光转化成红光、绿光和蓝光。
在另一示例中，所述LED微像素2为蓝光LED微像素，所述LED微像素2发出波长为440nm～490nm的蓝光；所述颜色转换膜4包括红光转换膜41及绿光转换膜42，所述红光转换膜41及所述绿光转换膜42在所述第一导电类型III-V族氮化物层3表面呈阵列分布，且一一对应设置于部分所述LED微像素2正上方，所述红光转换膜41及所述绿光转换膜42以微区阵列的方式在所述第一导电类型III-V族氮化物层3表面周期性交替排布，每一个所述微区阵列的尺寸与所述LED微像素2的尺寸一致或相近，每一个所述红光转换膜41及所述绿光转换膜42均对应一个所述LED微像素2。所述LED微像素2发出的蓝光激发所述红光转换膜41及所述绿光转换膜42分别发出红光和绿光，全彩显示所需的蓝光由所述LED微像素2发出的蓝光提供。需要说明的是，在该示例中，所述红光转换膜41及所述绿光转换膜42位于部分所述LED微像素2正上方，即部分所述LED微像素2的上方没有所述红光转换膜41或所述绿光转换膜42。
作为示例，所述红光转换膜41及所述绿光转换膜42的材料包括无机荧光粉和磷光材料、有机染料、有机荧光或磷光材料以及无机半导体纳米材料，可以将蓝光转化成红光及绿光。
在又一示例中，如图20所示，所述LED微像素2为小于480nm短波长光LED微像素，所述LED微像素2发出波长短于480nm的短波长光；所述颜色转换膜4包括：红光滤光膜45、绿光滤光膜46、蓝光滤光膜47及白光转换膜44，所述白光转换膜44位于所述第一导电类型III-V族氮化物层3表面，所述红光滤光膜45、所述绿光滤光膜46及所述蓝光滤光膜47在所述白光转换膜44表面呈阵列分布，且一一对应设置于所述LED微像素2正上方；即所述红光滤光膜45、所述绿光滤光膜46及所述蓝光滤光膜47以微区阵列的方式在所述白光转换膜22表面周期性交替排布，每一个所述微区阵列的尺寸与所述LED微像素2的尺寸一致或相近，且包含一种所述颜色转换膜。
作为示例，所述白光转换膜44的材料包括无机荧光粉和磷光材料、有机染料、有机荧光或磷光材料以及无机半导体纳米材料，在被蓝紫光或紫外光照射时，可以通过颜色转换和混合，将透射光转化为白光；所述红光滤光膜45、所述绿光滤光膜46及所述蓝光滤光膜47的材料包括有机分子材料和介质膜材料，可以选择性吸收或反射各种波长的光，透射所需的红、绿、蓝色光。
作为示例，所述白光转换膜44的厚度小于5倍相邻所述LED微像素2之间的间距，以便减小各所述LED微像素2之间的串扰。
综上所述，本发明提供一种基于III-V族氮化物半导体的LED全彩显示器件结构及制备方法，所述基于III-V族氮化物半导体的LED全彩显示器件结构包括：有源矩阵驱动硅基背板，所述有源矩阵驱动硅基背板内包括若干个驱动单元，每个所述驱动单元均包括阳极及公共阴极；LED微像素阵列，位于所述有源矩阵驱动硅基背板表面，包括若干个LED微像素；所述LED微像素在所述有源矩阵驱动硅基板表面呈阵列分布；各所述LED微像素均包括发光材料层及阳极，各所述LED微像素的阳极均位于所述有源矩阵驱动硅基背板表面，且分别与与其对应的所述驱动单元的阳极相连接；所述发光材料层位于所述LED微像素的所述阳极表面；第一导电类型III-V族氮化物层，位于各所述LED微像素的发光材料层表面，且将各所述LED微像素相连接；彩色显示所需的颜色转换膜，位于所述第一导电类型的III-V族氮化物层表面。本发明的基于III-V族氮化物半导体的LED全彩显示器件结构中各LED微像素及各颜色转换膜均通过厚度很小的第一导电类型III-V族氮化物层相连接，既可以缩小相邻LED微像素之间的间距，以提高其分辨率，又可以降低相邻颜色转换膜之间的串扰，从而显著提高本发明的显示器件结构的对比度；同时，本发明的显示器结构具有高分辨率、高对比 度、高效发光率等特性，器件结构的制备工艺简单且易于实现。
上述实施例仅例示性说明本发明的原理及其功效，而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下，对上述实施例进行修饰或改变。因此，举凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或改变，仍应由本发明的权利要求所涵盖。

Claims (29)

  1. 一种基于III-V族氮化物半导体的LED全彩显示器件结构，其特征在于，所述基于III-V族氮化物半导体的LED全彩显示器件结构包括：
    有源矩阵驱动硅基背板，所述有源矩阵驱动硅基背板内包括若干个驱动单元，每个所述驱动单元均包括阳极及共用阴极；
    LED微像素阵列，位于所述有源矩阵驱动硅基背板表面，包括若干个LED微像素；所述LED微像素在所述有源矩阵驱动硅基板表面呈阵列分布；各所述LED微像素均包括发光材料层及阳极，各所述LED微像素的阳极均位于所述有源矩阵驱动硅基背板表面，且分别与与其对应的所述驱动单元的阳极相连接；所述发光材料层位于所述LED微像素的所述阳极表面；
    第一导电类型III-V族氮化物层，位于各所述LED微像素的发光材料层表面，且将各所述LED微像素相连接；
    彩色显示所需的颜色转换膜，位于所述第一导电类型的III-V族氮化物层表面。
  2. 根据权利要求1所述的基于IIII-V族氮化物半导体的LED全彩显示器件结构，其特征在于：所述发光材料层包括量子阱层及第二导电类型IIII-V族氮化物层，所述第二导电类型IIII-V族氮化物层位于所述LED微像素的阳极表面，所述量子阱层位于所述第二导电类型IIII-V族氮化物层表面。
  3. 根据权利要求1所述的基于III-V族氮化物半导体的LED全彩显示器件结构，其特征在于：所述驱动单元的数量与所述LED微像素的数量相同。
  4. 根据权利要求1所述的基于III-V族氮化物半导体的LED全彩显示器件结构，其特征在于：还包括透明电极层，位于所述第一导电类型IIII-V族氮化物层表面，且位于所述第一导电类型IIII-V族氮化物层与所述颜色转换膜之间，构成所述LED微像素阵列的公共阴极，所述透明电极层与所述有源矩阵驱动硅基背板的公共阴极通过桥联金属相连接。
  5. 根据权利要求4所述的基于III-V族氮化物半导体的LED全彩显示器件结构，其特征在于：还包括绝缘透明薄膜，所述绝缘透明薄膜位于所述透明电极层表面，且位于所述透明电极层与所述颜色转换膜之间。
  6. 根据权利要求1所述的基于III-V族氮化物半导体的LED全彩显示器件结构，其特征在于： 还包括边缘公共阴极及绝缘透明薄膜，所述边缘公共阴极位于所述LED微像素阵列外侧，且位于所述第一导电类型III-V族氮化物层表面，所述边缘公共阴极与所述有源矩阵驱动硅基背板的公共阴极通过桥连金属相连接；所述绝缘透明薄膜位于所述第一导电类型IIII-V族氮化物层表面，且位于所述第一导电类型IIII-V族氮化物层与所述颜色转换膜之间。
  7. 根据权利要求1所述的基于III-V族氮化物半导体的LED全彩显示器件结构，其特征在于：所述LED微像素为紫光LED微像素或紫外光LED微像素，所述颜色转换膜包括：红光转换膜、绿光转换膜及蓝光转换膜，所述红光转换膜、所述绿光转换膜及所述蓝光转换膜在所述第一导电类型IIII-V族氮化物层表面呈阵列分布，且一一对应设置于所述LED微像素正上方。
  8. 根据权利要求1所述的基于IIII-V族氮化物半导体的LED全彩显示器件结构，其特征在于：所述LED微像素为小于480nm短波长光LED微像素，所述颜色转换膜包括：红光滤光膜、绿光滤光膜、蓝光滤光膜及白光转换膜，所述白光转换膜位于所述第一导电类型III-V族氮化物表面，所述红光滤光膜、所述绿光滤光膜及所述蓝光滤光膜在所述白光转换膜表面呈阵列分布，且一一对应设置于所述LED微像素正上方。
  9. 根据权利要求8所述的基于IIII-V族氮化物半导体的LED全彩显示器件结构，其特征在于：所述白光转换膜的厚度小于5倍相邻所述LED微像素之间的间距。
  10. 根据权利要求1所述的基于III-V族氮化物半导体的LED全彩显示器件结构，其特征在于：所述LED微像素为蓝光LED微像素，所述颜色转换膜包括红光转换膜及绿光转换膜，所述红光转换膜及所述绿光转换膜在所述第一导电类型IIII-V族氮化物层表面呈阵列分布，且一一对应设置于部分所述LED微像素正上方。
  11. 根据权利要求1所述的基于III-V族氮化物半导体的LED全彩显示器件结构，其特征在于：还包括钝化层，所述钝化层位于各所述LED微像素中裸露的所述发光材料层的表面侧壁及各所述LED微像素之间的所述第一导电类型III-V族氮化物层的表面
  12. 根据权利要求1至11中任一项所述的基于III-V族氮化物半导体的LED全彩显示器 件结构，其特征在于：所述驱动单元包括：
    开关-驱动晶体管，包括栅极、源极及漏极；所述开关-驱动晶体管的漏极与一电流源相连接，源极与所述LED微像素的阳极相连接；
    第一开关晶体管，包括栅极、源极及漏极；所述第一开关晶体管的栅极与同步开关信号线相连接，源极与所述开关-驱动晶体管的栅极相连接；
    闩锁寄存器，包括输入端及输出端；所述闩锁寄存器的输入端与脉宽或幅度调制信号相连接，输出端与所述第一开关晶体管的漏极相连接。
  13. 根据权利要求12所述的基于IIII-V族氮化物半导体的LED全彩显示器件结构，其特征在于：所述驱动单元还包括第二开关晶体管，所述第二开关晶体管包括栅极、源极及漏极，所述第二开关晶体管的栅极与地址总线相连接，漏极与数据总线相连接，源极与所述闩锁寄存器的输入端相连接。
  14. 根据权利要求12所述的基于III-V族氮化物半导体的LED全彩显示器件结构，其特征在于：所述闩锁寄存器包括；
    第一PMOS晶体管，包括栅极、源极及漏极；所述第一PMOS晶体管的漏极与电源电压相连接；
    第二PMOS晶体管，包括栅极、源极及漏极；所述第二PMOS晶体管的漏极与所述电源电压相连接；
    第一NMOS晶体管，包括栅极、源极及漏极；所述第一NMOS晶体管的栅极与所述第一PMOS晶体管的栅极相连接，漏极与所述第一PMOS管的源极相连接作为所述闩锁寄存器的输出端，源极接地；
    第二NMOS晶体管，包括栅极、源极及漏极；所述第二NMOS晶体管的栅极与所述第二PMOS晶体管的栅极相连接，漏极与所述第二PMOS管的源极相连接作为所述闩锁寄存器的输入端，源极接地。
  15. 根据权利要求12所述的基于IIII-V族氮化物半导体的LED全彩显示器件结构，其特征在于：所述闩锁寄存器包括；
    第三NMOS晶体管，包括栅极、源极及漏极；所述第三NMOS晶体管的栅极与所述地址总线相连接，漏极为所述闩锁寄存器的输出端；
    电容，一端与所述第三NMOS晶体管的源极相连接作为所述闩锁寄存器的输出端， 另一端接地。
  16. 一种基于III-V族氮化物半导体的LED全彩显示器件结构的制备方法，其特征在于，所述制备方法包括如下步骤：
    1)提供生长衬底，在所述生长衬底表面依次生长缓冲层、第一导电类型III-V族氮化物层、量子阱层及第二导电类型III-V族氮化物层；
    2)选择性刻蚀所述第二导电类型III-V族氮化物层及所述量子阱层直至裸露出所述第一导电类型III-V族氮化物层，以形成微LED台面阵列；
    3)在所述微LED台面阵列中的所述第二导电类型III-V族氮化物层表面形成阳极，所述阳极、所述量子阱层及所述第二导电类型III-V族氮化物层共同构成LED微像素，各所述LED微像素共同形成LED微像素阵列；
    4)提供有源矩阵驱动硅基背板，所述有源矩阵驱动硅基背板内包括若干个驱动单元，每个所述驱动单元均包括阳极及公共阴极；
    5)将步骤3)和4)得到的结构键合于所述有源矩阵驱动硅基背板表面，所述LED微像素的阳极表面为键合面，且所述LED微像素的阳极与所述驱动单元的阳极相连接；
    6)去除所述生长衬底；
    7)在所述第一导电类型III-V族氮化物层表面形成彩色显示所需的颜色转换膜。
  17. 根据权利要求16所述的基于III-V族氮化物半导体的LED全彩显示器件结构的制备方法，其特征在于：步骤2)与步骤3)之间还包括如下步骤：
    在步骤2)得到的结构表面形成钝化层，所述钝化层覆盖各所述LED微像素的表面及各所述LED微像素之间及所述LED像素微阵列外侧的所述第一导电类型III-V族氮化物层的表面；
    在各所述LED微像素中所述第二导电类型III-V族氮化物顶面及所述LED微像素阵列外侧的所述钝化层中形成开口，所述开口暴露出所述第二导电类型III-V族氮化物层及位于所述LED微像素阵列外侧的所述第一导电类型的III-V族氮化物层。
  18. 根据权利要求16所述的基于III-V族氮化物半导体的LED全彩显示器件结构的制备方法，其特征在于：步骤4)中，所述驱动单元包括：
    开关-驱动晶体管，包括栅极、源极及漏极；所述开关-驱动晶体管的漏极与一电流源相连接，源极与所述LED微像素的阳极相连接；
    第一开关晶体管，包括栅极、源极及漏极；所述第一开关晶体管的栅极与同步开关信号线相连接，源极与所述开关-驱动晶体管的栅极相连接；
    闩锁寄存器，包括输入端及输出端；所述闩锁寄存器的输入端与脉宽或幅度调制信号相连接，输出端与所述第一开关晶体管的漏极相连接。
  19. 根据权利要求18所述的基于III-V族氮化物半导体的LED全彩显示器件结构的制备方法，其特征在于：所述驱动单元还包括第二开关晶体管，所述第二开关晶体管包括栅极、源极及漏极，所述第二开关晶体管的栅极与地址总线相连接，漏极与数据总线相连接，源极与所述闩锁寄存器的输入端相连接。
  20. 根据权利要求18所述的基于III-V族氮化物半导体的LED全彩显示器件结构的制备方法，其特征在于：所述闩锁寄存器包括；
    第一PMOS晶体管，包括栅极、源极及漏极；所述第一PMOS晶体管的漏极与电源电压相连接；
    第二PMOS晶体管，包括栅极、源极及漏极；所述第二PMOS晶体管的漏极与所述电源电压相连接；
    第一NMOS晶体管，包括栅极、源极及漏极；所述第一NMOS晶体管的栅极与所述第一PMOS晶体管的栅极相连接，漏极与所述第一PMOS管的源极相连接作为所述闩锁寄存器的输出端，源极接地；
    第二NMOS晶体管，包括栅极、源极及漏极；所述第二NMOS晶体管的栅极与所述第二PMOS晶体管的栅极相连接，漏极与所述第二PMOS管的源极相连接作为所述闩锁寄存器的输入端，源极接地。
  21. 根据权利要求18所述的基于III-V族氮化物半导体的LED全彩显示器件结构的制备方法，其特征在于：所述闩锁寄存器包括；
    第三NMOS晶体管，包括栅极、源极及漏极；所述第三NMOS晶体管的栅极与所述地址总线相连接，漏极为所述闩锁寄存器的输出端；
    电容，一端与所述第三NMOS晶体管的源极相连接作为所述闩锁寄存器的输出端，另一端接地。
  22. 根据权利要求16所述的基于III-V族氮化物半导体的LED全彩显示器件结构的制备 方法，其特征在于：步骤5)包括以下步骤：
    5-1)刻蚀所述有源矩阵驱动硅基背板以裸露出所述驱动单元的阳极及公共阴极；
    5-2)在所述驱动单元的阳极表面形成凸块底层金属层及键合焊柱；
    5-3)将步骤3)得到的结构通过倒装焊经由所述凸块底层金属层及键合焊柱键合于所述有源矩阵驱动硅基背板表面。
  23. 根据权利要求16所述的基于III-V族氮化物半导体的LED全彩显示器件结构的制备方法，其特征在于：步骤6)与步骤7)之间还包括如下步骤：
    在所述第一导电类型III-V族氮化物层表面形成透明电极层，构成所述LED微像素阵列的公共阴极；步骤7)中，所述颜色转换膜形成于所述透明电极层表面。
  24. 根据权利要求16所述的基于III-V族氮化物半导体的LED全彩显示器件结构的制备方法，其特征在于：步骤6)与步骤7)之间还包括如下步骤：
    在所述第一导电类型III-V族氮化物层表面形成透明电极层，构成所述LED微像素阵列的公共阴极；
    在所述透明电极层表面形成绝缘透明薄膜；步骤7)中，所述颜色转换膜形成于所述绝缘透明薄膜表面。
  25. 根据权利要求16所述的基于III-V族氮化物半导体的LED全彩显示器件结构的制备方法，其特征在于：步骤6)与步骤7)之间还包括如下步骤：
    在所述LED微像素阵列外侧的所述第一导电类型的III-V族氮化物层表面形成边缘公共阴极；
    在所述第一导电类型III-V族氮化物层表面形成绝缘透明薄膜；步骤7)中，所述颜色转换膜形成于所述绝缘透明薄膜表面。
  26. 根据权利要求16所述的基于III-V族氮化物半导体的LED全彩显示器件结构的制备方法，其特征在于：所述LED微像素为紫光LED微像素或紫外光LED微像素，步骤7)中形成的所述颜色转换膜包括：红光转换膜、绿光转换膜及蓝光转换膜，所述红光转换膜、所述绿光转换膜及所述蓝光转换膜在所述第一导电类型III-V族氮化物层表面呈阵列分布，且一一对应设置于所述LED微像素正上方。
  27. 根据权利要求16所述的基于III-V族氮化物半导体的LED全彩显示器件结构的制备方法，其特征在于：所述LED微像素为小于480nm短波长光LED微像素，步骤7)中形成的所述颜色转换膜包括：红光滤光膜、绿光滤光膜、蓝光滤光膜及白光转换膜，所述白光转换膜位于所述第一导电类型III-V族氮化物层表面，所述红光滤光膜、所述绿光滤光膜及所述蓝光滤光膜在所述白光转换膜表面呈阵列分布，且一一对应设置于所述LED微像素正上方。
  28. 根据权利要求27所述的基于III-V族氮化物半导体的LED全彩显示器件结构的制备方法，其特征在于：所述白光转换膜的厚度小于5倍相邻所述LED微像素之间的间距。
  29. 根据权利要求16所述的基于III-V族氮化物半导体的LED全彩显示器件结构的制备方法，其特征在于：所述LED微像素为蓝光LED微像素，步骤7)中形成的所述颜色转换膜包括红光转换膜及绿光转换膜，所述红光转换膜及所述绿光转换膜在所述第一导电类型III-V族氮化物层表面呈阵列分布，且一一对应设置于部分所述LED微像素正上方。
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