WO2018120306A1 - 显示面板及显示装置 - Google Patents

显示面板及显示装置 Download PDF

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Publication number
WO2018120306A1
WO2018120306A1 PCT/CN2017/071159 CN2017071159W WO2018120306A1 WO 2018120306 A1 WO2018120306 A1 WO 2018120306A1 CN 2017071159 W CN2017071159 W CN 2017071159W WO 2018120306 A1 WO2018120306 A1 WO 2018120306A1
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WO
WIPO (PCT)
Prior art keywords
wire
adapter member
thin film
film transistor
transistor array
Prior art date
Application number
PCT/CN2017/071159
Other languages
English (en)
French (fr)
Inventor
赵丽
徐向阳
Original Assignee
深圳市华星光电技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市华星光电技术有限公司 filed Critical 深圳市华星光电技术有限公司
Priority to US15/329,460 priority Critical patent/US10578907B2/en
Publication of WO2018120306A1 publication Critical patent/WO2018120306A1/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13452—Conductors connecting driver circuitry and terminals of panels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a display panel and a display device.
  • a conventional display panel generally includes a display device and a wire combination, and the display device is disposed in a display area of the display panel, and the wire combination is disposed in a peripheral area of the display panel.
  • the wire assembly includes a predetermined number of wires that are electrically connected to the display device.
  • the wires are used to deliver electrical signals to the display device.
  • the size of the peripheral area may be reduced.
  • the line width of the wire causes the wire to have a wire breakage defect.
  • An object of the present invention is to provide a display panel and a display device capable of preventing the wire from being broken due to the reduction of the line width of the wire when the peripheral area of the display panel is limited in size and the number of wires is fixed. defect.
  • a display panel is provided with a display area and a peripheral area, the peripheral area is disposed on at least one side of the display area, the display panel includes: a thin film transistor array substrate, the thin film transistor array substrate and a circuit device is disposed at a position corresponding to the display area, and the first transistor and the conductive member are disposed at a position corresponding to the peripheral region of the thin film transistor array substrate, and the first wire is connected to the circuit device; a film substrate, wherein the color film substrate is provided with a common electrode at a position corresponding to the display area, the color film substrate is provided with a second wire at a position corresponding to the peripheral region; and a liquid crystal layer, the liquid crystal layer And being disposed between the thin film transistor array substrate and the color filter substrate; wherein the second wire is used when the thin film transistor array substrate and the color film substrate are superimposed and integrated, and the conductive member And the first wire is in contact to electrically conduct a current path between the conductive member and the first wire; the first wire includes a first end and
  • a first elastic conductive block is further disposed between the first adapter member and the third adapter member; and between the second adapter member and the fourth adapter member A second elastic conductive block is provided.
  • the common electrode and the second wire are provided with a first electrode layer at a position corresponding to the display region and the peripheral region of the color filter substrate, and the first electrode
  • the electrode layer is formed by laser cutting at least a portion of the peripheral region.
  • the common electrode and the second wire are provided with a second electrode layer at a position corresponding to the display region and the peripheral region of the color filter substrate, and the second electrode layer
  • the electrode layer is formed by performing a mask process and removing at least a portion of the second electrode layer located in the peripheral region.
  • a display panel is provided with a display area and a peripheral area, the peripheral area is disposed on at least one side of the display area, the display panel includes: a thin film transistor array substrate, the thin film transistor array substrate and a circuit device is disposed at a position corresponding to the display area, and the first transistor and the conductive member are disposed at a position corresponding to the peripheral region of the thin film transistor array substrate, and the first wire is connected to the circuit device; a film substrate, wherein the color film substrate is provided with a common electrode at a position corresponding to the display area, the color film substrate is provided with a second wire at a position corresponding to the peripheral region; and a liquid crystal layer, the liquid crystal layer And being disposed between the thin film transistor array substrate and the color filter substrate; wherein the second wire is used when the thin film transistor array substrate and the color film substrate are superimposed and integrated, and the conductive member And contacting the first wire to electrically connect a current path between the conductive member and the first wire.
  • the first wire includes a first end and a second end
  • the second wire includes a third end and a fourth end, the first end being connected to the circuit device, the third a position of the end in the color filter substrate corresponding to a position of the conductive member in the thin film transistor array substrate, a position of the second end in the thin film transistor array substrate and the fourth end being The position in the color filter substrate corresponds to the position.
  • the thin film transistor array substrate is further provided with a first switching member and a second switching member at a position corresponding to the peripheral region, and the first switching member is connected to the conductive member.
  • the second switching member is connected to the second end of the first wire; when the thin film transistor array substrate and the color film substrate are superimposed and integrated, the third of the second wire The end is in contact with the first adapter member, and the fourth end of the second wire is in contact with the second adapter member.
  • the color filter substrate is further provided with a third adapter member and a fourth adapter member at a position corresponding to the peripheral region, the third adapter member and the second conductor
  • the third end connection is connected to the fourth end of the second wire; when the thin film transistor array substrate and the color film substrate are superimposed and integrated, the third The adapter member is in contact with the first adapter member, and the fourth adapter member is in contact with the second adapter member.
  • a first elastic conductive block is further disposed between the first adapter member and the third adapter member; and between the second adapter member and the fourth adapter member A second elastic conductive block is provided.
  • the surface of the first wire is provided with a first insulating film
  • the surface of the second wire is coated with a second insulating film.
  • the common electrode and the second wire are provided with a first electrode layer at a position corresponding to the display region and the peripheral region of the color filter substrate, and the first electrode
  • the electrode layer is formed by laser cutting at least a portion of the peripheral region.
  • the common electrode and the second wire are provided with a second electrode layer at a position corresponding to the display region and the peripheral region of the color filter substrate, and the second electrode layer
  • the electrode layer is formed by performing a mask process and removing at least a portion of the second electrode layer located in the peripheral region.
  • a display device includes: a backlight module; and a display panel, the display panel is provided with a display area and a peripheral area, the peripheral area is disposed on at least one side of the display area, the display panel And including: a thin film transistor array substrate, wherein the thin film transistor array substrate is provided with a circuit device at a position corresponding to the display area, and the thin film transistor array substrate is provided with a first wire and a conductive member at a position corresponding to the peripheral region The first wire is connected to the circuit device; the color filter substrate is disposed at a position corresponding to the display area, and a common electrode is disposed, and the color film substrate is located at a position corresponding to the peripheral area Providing a second wire; and a liquid crystal layer disposed between the thin film transistor array substrate and the color filter substrate; wherein the second wire is used in the thin film transistor array substrate and When the color film substrate is superimposed and integrated, contacting the conductive member and the first wire to connect the conductive member and the first wire Conducting current path.
  • the first wire includes a first end and a second end
  • the second wire includes a third end and a fourth end, the first end being connected to the circuit device, the third a position of the end in the color filter substrate corresponding to a position of the conductive member in the thin film transistor array substrate, a position of the second end in the thin film transistor array substrate and the fourth end being The position in the color filter substrate corresponds to the position.
  • the thin film transistor array substrate is further provided with a first switching member and a second switching member at a position corresponding to the peripheral region, and the first switching member is connected to the conductive member.
  • the second switching member is connected to the second end of the first wire; when the thin film transistor array substrate and the color film substrate are superimposed and integrated, the third of the second wire The end is in contact with the first adapter member, and the fourth end of the second wire is in contact with the second adapter member.
  • the color filter substrate is further provided with a third adapter member and a fourth adapter member at a position corresponding to the peripheral region, the third adapter member and the second conductor
  • the third end connection is connected to the fourth end of the second wire; when the thin film transistor array substrate and the color film substrate are superimposed and integrated, the third The adapter member is in contact with the first adapter member, and the fourth adapter member is in contact with the second adapter member.
  • a first elastic conductive block is further disposed between the first adapter member and the third adapter member; and between the second adapter member and the fourth adapter member A second elastic conductive block is provided.
  • the surface of the first wire is provided with a first insulating film
  • the surface of the second wire is coated with a second insulating film.
  • the common electrode and the second wire are provided with a first electrode layer at a position corresponding to the display region and the peripheral region of the color filter substrate, and the first electrode
  • the electrode layer is formed by laser cutting at least a portion of the peripheral region.
  • the common electrode and the second wire are provided with a second electrode layer at a position corresponding to the display region and the peripheral region of the color filter substrate, and the second electrode
  • the electrode layer is formed by performing a mask process and removing at least a portion of the second electrode layer located in the peripheral region.
  • the present invention provides a second wire disposed on the color filter substrate, the second wire is connected to the first wire and the conductive member on the thin film transistor array substrate, and thus the a portion of the wire in the peripheral region of the thin film transistor array substrate is transferred to the color filter substrate, and a position corresponding to the peripheral region on the thin film transistor array substrate has sufficient space for the wire (for example, the first A wire arrangement eliminates the need to reduce the line width of the wires located in the peripheral region, so that wire breakage defects can be avoided.
  • FIG. 1 is a schematic view of a thin film transistor array substrate of a display panel of the present invention.
  • FIG. 2 is a schematic view of a color filter substrate of a display panel of the present invention.
  • FIG. 1 is a schematic diagram of a thin film transistor array substrate 101 of a display panel of the present invention
  • FIG. 2 is a schematic view of a color filter substrate 401 of the display panel of the present invention.
  • the display device of the present invention includes a backlight module and a display panel.
  • the display panel is a TFT-LCD (Thin Film) Transistor Liquid Crystal Display, thin film transistor liquid crystal display panel).
  • a first embodiment of the display panel of the present invention is provided with a display area 201 and a peripheral area 301.
  • the peripheral area 301 is disposed on at least one side of the display area 201.
  • the display panel includes a thin film transistor array substrate 101 and a color film. The substrate 401 and the liquid crystal layer.
  • the thin film transistor array substrate 101 is provided with a circuit device at a position corresponding to the display area 201, and the thin film transistor array substrate 101 is provided with a first wire 1012 and a conductive member 1011 at a position corresponding to the peripheral region 301.
  • the first wire 1012 is coupled to the circuit device.
  • the circuit device can be, for example, a scan line, a combination of data lines and pixel cells, or a driver chip.
  • the color film substrate 401 is provided with a common electrode at a position corresponding to the display area 201, and the color film substrate 401 is provided with a second wire 4011 at a position corresponding to the peripheral area 301.
  • the liquid crystal layer is disposed between the thin film transistor array substrate 101 and the color filter substrate 401.
  • the second wire 4011 is used to contact the conductive member 1011 and the first wire 1012 when the thin film transistor array substrate 101 and the color filter substrate 401 are integrally combined.
  • the current path between the conductive member 1011 and the first wire 1012 is turned on.
  • the first wire 1012 includes a first end and a second end
  • the second wire 4011 includes a third end and a fourth end, the first end being connected to the circuit device a position of the third end in the color filter substrate 401 corresponding to a position of the conductive member 1011 in the thin film transistor array substrate 101, and the second end is in the thin film transistor array substrate 101 The position corresponds to a position of the fourth end in the color filter substrate 401.
  • the thin film transistor array substrate 101 is further provided with a first switching member 1013 and a second switching member 1014 at a position corresponding to the peripheral region 301, the first switching member 1013 is coupled to the conductive member 1011, and the second adapter member 1014 is coupled to the second end of the first wire 1012.
  • the third end of the second wire 4011 is in contact with the first adapter member 1013, and the second wire is The fourth end of the 4011 is in contact with the second adapter member 1014.
  • the common electrode and the second wire 4011 are provided with an electrode layer at a position corresponding to the display region 201 and the peripheral region 301 of the color filter substrate 401 (No.
  • An electrode layer) is formed by laser cutting the electrode layer (the first electrode layer) at least a portion of the peripheral region 301.
  • the color filter substrate 401 is further provided with a third adapter member 4012 and a fourth adapter member 4013 at a position corresponding to the peripheral region 301, and the third adapter member 4012 and the second lead 4011 The third end connection is connected, and the fourth adapter member 4013 is connected to the fourth end of the second wire 4011.
  • the third adapter member 4012 is in contact with the first adapter member 1013, and the fourth adapter member 4013 is The second adapter member 1014 is in contact.
  • the surface of the first wire 1012 is provided with a first insulating film, and the surface of the second wire 4011 is coated with a second insulating film.
  • a first elastic conductive block is further disposed between the first switching member 1013 and the third switching member 4012, and the first elastic conductive block is used in the thin film transistor array substrate. 101 and a gap between the first adapter member 1013 and the third adapter member 4012 when the color film substrate 401 is integrated in alignment to prevent the first adapter member 1013 from being The third adapter member 4012 is in poor contact.
  • a second elastic conductive block is further disposed between the second adapter member 1014 and the fourth adapter member 4013, and the second elastic conductive block is used in the thin film transistor array substrate 101 and the color film Filling a gap between the second adapter member 1014 and the fourth adapter member 4013 when the substrate 401 is integrated in position to prevent the second adapter member 1014 and the fourth adapter member 4013 Poor contact.
  • the first elastic conductive block and the second elastic conductive block are rubber blocks whose surface is coated with a conductive material (for example, a conductive paste).
  • the surfaces of the first adapter member 1013, the second adapter member 1014, the third adapter member 4012, and the fourth adapter member 4013 are each provided with an array of protrusions, the array of protrusions including At least two protrusions, the ends of the protrusions being pointed, and at least two of the protrusions are for engaging the first elastic conductive block and/or the second elastic conductive block.
  • a first recess and a second recess are respectively disposed on opposite surfaces of the first elastic conductive block, and a shape and an area of the first recess correspond to a shape and an area of the first adapter member 1013.
  • the shape and area of the second recess correspond to the shape and area of the third adapter member 4012.
  • the first recess and the second recess are respectively engaged with the first adapter member 1013 and the third adapter member 4012.
  • a third recess and a fourth recess are respectively disposed on opposite surfaces of the second elastic conductive block, and a shape and an area of the third recess correspond to a shape and an area of the second adapter member 1014.
  • the shape and area of the fourth cavity correspond to the shape and area of the fourth adapter member 4013.
  • the third recess and the fourth recess are respectively engaged with the second adapter member 1014 and the fourth adapter member 4013.
  • the second embodiment of the display panel of the present invention is similar to the first embodiment described above, except that:
  • the common electrode and the second wire 4011 are provided with an electrode layer (second electrode layer) at a position corresponding to the display region 201 and the peripheral region 301 of the color filter substrate 401, and
  • the electrode layer (the second electrode layer) is formed by performing a mask process and removing at least a portion of the electrode layer (the second electrode layer) located in the peripheral region 301.
  • the second wire 4011 is disposed on the color filter substrate 401, and the second wire 4011 is connected to the first wire 1012 and the conductive member 1011 on the thin film transistor array substrate 101. Therefore, a part of the wires of the thin film transistor array substrate located in the peripheral region 301 can be transferred onto the color filter substrate 401, and a position corresponding to the peripheral region 301 on the thin film transistor array substrate 101 is sufficient.
  • the space is arrangable for the wires (for example, the first wires) without reducing the line width of the wires located in the peripheral region 301, so that the wires may be prevented from being broken. That is, the present invention can prevent the wire from being broken due to the reduction of the line width of the wire in the case where the peripheral area 301 of the display panel is limited in size and the number of the wires is fixed.
  • the present invention can also avoid electrostatic discharge due to crossover in the thin film transistor array substrate (ESD, Electro Static Discharge) phenomenon.
  • ESD Electro Static Discharge

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种显示面板及显示装置。显示面板包括薄膜晶体管阵列基板(101)、彩膜基板(401)和液晶层，薄膜晶体管阵列基板(101)与显示面板的外围区(301)对应的位置处设置有第一导线(1012)和导电构件(1011)；彩膜基板(401)与外围区(301)对应的位置处设置有第二导线(4011)；第二导线(4011)用于与导电构件(1011)和第一导线(1012)相接触，从而能避免因缩减导线的线宽而导致导线出现断线缺陷。

Description

显示面板及显示装置 技术领域
本发明涉及显示技术领域，特别涉及一种显示面板及显示装置。
 背景技术
传统的显示面板一般包括显示器件和导线组合，所述显示器件设置于所述显示面板的显示区中，所述导线组合设置于所述显示面板的外围区中。
所述导线组合包括预定数量的导线，所述导线与所述显示器件电性连接。所述导线用于向所述显示器件输送电信号。
在所述显示区的尺寸增大的情况下，所述外围区的尺寸会被缩减，此时，为了在所述外围区中设置预定数量的所述导线，需要缩减所述导线的线宽，然而，缩减所述导线的线宽会导致所述导线出现断线缺陷。
故，有必要提出一种新的技术方案，以解决上述技术问题。
 技术问题
本发明的目的在于提供一种显示面板及显示装置，其能在显示面板的外围区尺寸有限并且导线的数量固定的情况下，避免因缩减所述导线的线宽而导致所述导线出现断线缺陷。
 技术解决方案
为解决上述问题，本发明的技术方案如下：
一种显示面板，所述显示面板设置有显示区和外围区，所述外围区设置于所述显示区的至少一侧，所述显示面板包括：薄膜晶体管阵列基板，所述薄膜晶体管阵列基板与所述显示区对应的位置处设置有电路器件，所述薄膜晶体管阵列基板与所述外围区对应的位置处设置有第一导线和导电构件，所述第一导线与所述电路器件连接；彩膜基板，所述彩膜基板与所述显示区对应的位置处设置有共通电极，所述彩膜基板与所述外围区对应的位置处设置有第二导线；以及液晶层，所述液晶层设置于所述薄膜晶体管阵列基板和所述彩膜基板之间；其中，所述第二导线用于在所述薄膜晶体管阵列基板与所述彩膜基板叠加组合为一体时，与所述导电构件以及所述第一导线相接触，以使所述导电构件与所述第一导线之间的电流通道导通；所述第一导线包括第一末端和第二末端，所述第二导线包括第三末端和第四末端，所述第一末端与所述电路器件连接，所述第三末端在所述彩膜基板中的位置与所述导电构件在所述薄膜晶体管阵列基板中的位置对应，所述第二末端在所述薄膜晶体管阵列基板中的位置与所述第四末端在所述彩膜基板中的位置对应；所述第一导线的表面设置有第一绝缘膜，所述第二导线的表面涂覆有第二绝缘膜；所述薄膜晶体管阵列基板与所述外围区对应的位置处还设置有第一转接构件和第二转接构件，所述第一转接构件与所述导电构件连接，所述第二转接构件与所述第一导线的所述第二末端连接；在所述薄膜晶体管阵列基板与所述彩膜基板叠加组合为一体时，所述第二导线的所述第三末端与所述第一转接构件相接触，所述第二导线的所述第四末端与所述第二转接构件相接触；所述彩膜基板与所述外围区对应的位置处还设置有第三转接构件和第四转接构件，所述第三转接构件与所述第二导线的所述第三末端连接，所述第四转接构件与所述第二导线的所述第四末端连接；在所述薄膜晶体管阵列基板与所述彩膜基板叠加组合为一体时，所述第三转接构件与所述第一转接构件相接触，所述第四转接构件与所述第二转接构件相接触。
在上述显示面板中，所述第一转接构件和所述第三转接构件之间还设置有第一弹性导电块；所述第二转接构件和所述第四转接构件之间还设置有第二弹性导电块。
在上述显示面板中，所述共通电极和所述第二导线是通过在所述彩膜基板与所述显示区和所述外围区对应的位置处设置第一电极层，并对所述第一电极层位于所述外围区的至少一部分进行激光切割来形成的。
在上述显示面板中，所述共通电极和所述第二导线是通过在所述彩膜基板与所述显示区和所述外围区对应的位置处设置第二电极层，并对所述第二电极层实施光罩制程，以及去除所述第二电极层中位于所述外围区的至少一部分来形成的。
一种显示面板，所述显示面板设置有显示区和外围区，所述外围区设置于所述显示区的至少一侧，所述显示面板包括：薄膜晶体管阵列基板，所述薄膜晶体管阵列基板与所述显示区对应的位置处设置有电路器件，所述薄膜晶体管阵列基板与所述外围区对应的位置处设置有第一导线和导电构件，所述第一导线与所述电路器件连接；彩膜基板，所述彩膜基板与所述显示区对应的位置处设置有共通电极，所述彩膜基板与所述外围区对应的位置处设置有第二导线；以及液晶层，所述液晶层设置于所述薄膜晶体管阵列基板和所述彩膜基板之间；其中，所述第二导线用于在所述薄膜晶体管阵列基板与所述彩膜基板叠加组合为一体时，与所述导电构件以及所述第一导线相接触，以使所述导电构件与所述第一导线之间的电流通道导通。
在上述显示面板中，所述第一导线包括第一末端和第二末端，所述第二导线包括第三末端和第四末端，所述第一末端与所述电路器件连接，所述第三末端在所述彩膜基板中的位置与所述导电构件在所述薄膜晶体管阵列基板中的位置对应，所述第二末端在所述薄膜晶体管阵列基板中的位置与所述第四末端在所述彩膜基板中的位置对应。
在上述显示面板中，所述薄膜晶体管阵列基板与所述外围区对应的位置处还设置有第一转接构件和第二转接构件，所述第一转接构件与所述导电构件连接，所述第二转接构件与所述第一导线的所述第二末端连接；在所述薄膜晶体管阵列基板与所述彩膜基板叠加组合为一体时，所述第二导线的所述第三末端与所述第一转接构件相接触，所述第二导线的所述第四末端与所述第二转接构件相接触。
在上述显示面板中，所述彩膜基板与所述外围区对应的位置处还设置有第三转接构件和第四转接构件，所述第三转接构件与所述第二导线的所述第三末端连接，所述第四转接构件与所述第二导线的所述第四末端连接；在所述薄膜晶体管阵列基板与所述彩膜基板叠加组合为一体时，所述第三转接构件与所述第一转接构件相接触，所述第四转接构件与所述第二转接构件相接触。
在上述显示面板中，所述第一转接构件和所述第三转接构件之间还设置有第一弹性导电块；所述第二转接构件和所述第四转接构件之间还设置有第二弹性导电块。
在上述显示面板中，所述第一导线的表面设置有第一绝缘膜，所述第二导线的表面涂覆有第二绝缘膜。
在上述显示面板中，所述共通电极和所述第二导线是通过在所述彩膜基板与所述显示区和所述外围区对应的位置处设置第一电极层，并对所述第一电极层位于所述外围区的至少一部分进行激光切割来形成的。
在上述显示面板中，所述共通电极和所述第二导线是通过在所述彩膜基板与所述显示区和所述外围区对应的位置处设置第二电极层，并对所述第二电极层实施光罩制程，以及去除所述第二电极层中位于所述外围区的至少一部分来形成的。
一种显示装置，所述显示装置包括：背光模组；以及显示面板，所述显示面板设置有显示区和外围区，所述外围区设置于所述显示区的至少一侧，所述显示面板包括：薄膜晶体管阵列基板，所述薄膜晶体管阵列基板与所述显示区对应的位置处设置有电路器件，所述薄膜晶体管阵列基板与所述外围区对应的位置处设置有第一导线和导电构件，所述第一导线与所述电路器件连接；彩膜基板，所述彩膜基板与所述显示区对应的位置处设置有共通电极，所述彩膜基板与所述外围区对应的位置处设置有第二导线；以及液晶层，所述液晶层设置于所述薄膜晶体管阵列基板和所述彩膜基板之间；其中，所述第二导线用于在所述薄膜晶体管阵列基板与所述彩膜基板叠加组合为一体时，与所述导电构件以及所述第一导线相接触，以使所述导电构件与所述第一导线之间的电流通道导通。
在上述显示装置中，所述第一导线包括第一末端和第二末端，所述第二导线包括第三末端和第四末端，所述第一末端与所述电路器件连接，所述第三末端在所述彩膜基板中的位置与所述导电构件在所述薄膜晶体管阵列基板中的位置对应，所述第二末端在所述薄膜晶体管阵列基板中的位置与所述第四末端在所述彩膜基板中的位置对应。
在上述显示装置中，所述薄膜晶体管阵列基板与所述外围区对应的位置处还设置有第一转接构件和第二转接构件，所述第一转接构件与所述导电构件连接，所述第二转接构件与所述第一导线的所述第二末端连接；在所述薄膜晶体管阵列基板与所述彩膜基板叠加组合为一体时，所述第二导线的所述第三末端与所述第一转接构件相接触，所述第二导线的所述第四末端与所述第二转接构件相接触。
在上述显示装置中，所述彩膜基板与所述外围区对应的位置处还设置有第三转接构件和第四转接构件，所述第三转接构件与所述第二导线的所述第三末端连接，所述第四转接构件与所述第二导线的所述第四末端连接；在所述薄膜晶体管阵列基板与所述彩膜基板叠加组合为一体时，所述第三转接构件与所述第一转接构件相接触，所述第四转接构件与所述第二转接构件相接触。
在上述显示装置中，所述第一转接构件和所述第三转接构件之间还设置有第一弹性导电块；所述第二转接构件和所述第四转接构件之间还设置有第二弹性导电块。
在上述显示装置中，所述第一导线的表面设置有第一绝缘膜，所述第二导线的表面涂覆有第二绝缘膜。
在上述显示装置中，所述共通电极和所述第二导线是通过在所述彩膜基板与所述显示区和所述外围区对应的位置处设置第一电极层，并对所述第一电极层位于所述外围区的至少一部分进行激光切割来形成的。
在上述显示装置中，所述共通电极和所述第二导线是通过在所述彩膜基板与所述显示区和所述外围区对应的位置处设置第二电极层，并对所述第二电极层实施光罩制程，以及去除所述第二电极层中位于所述外围区的至少一部分来形成的。
 有益效果
相对现有技术，本发明由于在所述彩膜基板上设置第二导线，所述第二导线与位于所述薄膜晶体管阵列基板上的第一导线以及所述导电构件连接，因此可以将所述薄膜晶体管阵列基板位于所述外围区中的部分导线转移到所述彩膜基板上，所述薄膜晶体管阵列基板上与所述外围区对应的位置具有充足的空间可供导线（例如，所述第一导线）布置，无需缩减位于所述外围区中的所述导线的线宽，从而可以避免所述导线出现断线缺陷。
 附图说明
为让本发明的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式，作详细说明如下。
图1为本发明的显示面板的薄膜晶体管阵列基板的示意图。
图2为本发明的显示面板的彩膜基板的示意图。
 本发明的最佳实施方式
本说明书所使用的词语“实施例”意指实例、示例或例证。此外，本说明书和所附权利要求中所使用的冠词“一”一般地可以被解释为“一个或多个”，除非另外指定或从上下文可以清楚确定单数形式。
参考图1和图2，图1为本发明的显示面板的薄膜晶体管阵列基板101的示意图，图2为本发明的显示面板的彩膜基板401的示意图。
本发明的显示装置包括背光模组和显示面板。所述显示面板是TFT-LCD（Thin Film Transistor Liquid Crystal Display，薄膜晶体管液晶显示面板）。
本发明的显示面板的第一实施例设置有显示区201和外围区301，所述外围区301设置于所述显示区201的至少一侧，所述显示面板包括薄膜晶体管阵列基板101、彩膜基板401和液晶层。
所述薄膜晶体管阵列基板101与所述显示区201对应的位置处设置有电路器件，所述薄膜晶体管阵列基板101与所述外围区301对应的位置处设置有第一导线1012和导电构件1011，所述第一导线1012与所述电路器件连接。所述电路器件可例如为扫描线、数据线和像素单元的组合或者驱动器芯片。
所述彩膜基板401与所述显示区201对应的位置处设置有共通电极，所述彩膜基板401与所述外围区301对应的位置处设置有第二导线4011。
所述液晶层设置于所述薄膜晶体管阵列基板101和所述彩膜基板401之间。
其中，所述第二导线4011用于在所述薄膜晶体管阵列基板101与所述彩膜基板401叠加组合为一体时，与所述导电构件1011以及所述第一导线1012相接触，以使所述导电构件1011与所述第一导线1012之间的电流通道导通。
在本实施例的显示面板中，所述第一导线1012包括第一末端和第二末端，所述第二导线4011包括第三末端和第四末端，所述第一末端与所述电路器件连接，所述第三末端在所述彩膜基板401中的位置与所述导电构件1011在所述薄膜晶体管阵列基板101中的位置对应，所述第二末端在所述薄膜晶体管阵列基板101中的位置与所述第四末端在所述彩膜基板401中的位置对应。
在本实施例的显示面板中，所述薄膜晶体管阵列基板101与所述外围区301对应的位置处还设置有第一转接构件1013和第二转接构件1014，所述第一转接构件1013与所述导电构件1011连接，所述第二转接构件1014与所述第一导线1012的所述第二末端连接。
在所述薄膜晶体管阵列基板101与所述彩膜基板401叠加组合为一体时，所述第二导线4011的所述第三末端与所述第一转接构件1013相接触，所述第二导线4011的所述第四末端与所述第二转接构件1014相接触。
在本实施例的显示面板中，所述共通电极和所述第二导线4011是通过在所述彩膜基板401与所述显示区201和所述外围区301对应的位置处设置电极层（第一电极层），并对所述电极层（所述第一电极层）位于所述外围区301的至少一部分进行激光切割来形成的。
所述彩膜基板401与所述外围区301对应的位置处还设置有第三转接构件4012和第四转接构件4013，所述第三转接构件4012与所述第二导线4011的所述第三末端连接，所述第四转接构件4013与所述第二导线4011的所述第四末端连接。
在所述薄膜晶体管阵列基板101与所述彩膜基板401叠加组合为一体时，所述第三转接构件4012与所述第一转接构件1013相接触，所述第四转接构件4013与所述第二转接构件1014相接触。
作为一种改进，所述第一导线1012的表面设置有第一绝缘膜，所述第二导线4011的表面涂覆有第二绝缘膜。
作为另一种改进，所述第一转接构件1013和所述第三转接构件4012之间还设置有第一弹性导电块，所述第一弹性导电块用于在所述薄膜晶体管阵列基板101和所述彩膜基板401对位组合为一体时填充所述第一转接构件1013和所述第三转接构件4012之间的间隙，以防止所述第一转接构件1013与所述第三转接构件4012接触不良。
所述第二转接构件1014和所述第四转接构件4013之间还设置有第二弹性导电块，所述第二弹性导电块用于在所述薄膜晶体管阵列基板101和所述彩膜基板401对位组合为一体时填充所述第二转接构件1014和所述第四转接构件4013之间的间隙，以防止所述第二转接构件1014与所述第四转接构件4013接触不良。
所述第一弹性导电块和所述第二弹性导电块均为表面涂覆有导电材料（例如，导电胶）的橡胶块。
所述第一转接构件1013、所述第二转接构件1014、所述第三转接构件4012和所述第四转接构件4013的表面均设置有突起部阵列，所述突起部阵列包括至少两突起部，所述突起部的末端为尖端状，至少两所述突起部用于咬合所述第一弹性导电块和/或所述第二弹性导电块。
所述第一弹性导电块的相对两表面上分别设置有第一凹洞和第二凹洞，所述第一凹洞的形状和面积与所述第一转接构件1013的形状和面积对应，所述第二凹洞的形状和面积与所述第三转接构件4012的形状和面积对应。所述第一凹洞和所述第二凹洞分别与所述第一转接构件1013和所述第三转接构件4012相卡设。
所述第二弹性导电块的相对两表面上分别设置有第三凹洞和第四凹洞，所述第三凹洞的形状和面积与所述第二转接构件1014的形状和面积对应，所述第四凹洞的形状和面积与所述第四转接构件4013的形状和面积对应。所述第三凹洞和所述第四凹洞分别与所述第二转接构件1014和所述第四转接构件4013相卡设。
本发明的显示面板的第二实施例与上述第一实施例相似，不同之处在于：
所述共通电极和所述第二导线4011是通过在所述彩膜基板401与所述显示区201和所述外围区301对应的位置处设置电极层（第二电极层），并对所述电极层（所述第二电极层）实施光罩制程，以及去除所述电极层（所述第二电极层）中位于所述外围区301的至少一部分来形成的。
通过上述技术方案，本发明由于在所述彩膜基板401上设置第二导线4011，所述第二导线4011与位于所述薄膜晶体管阵列基板101上的第一导线1012以及所述导电构件1011连接，因此可以将所述薄膜晶体管阵列基板位于所述外围区301中的部分导线转移到所述彩膜基板401上，所述薄膜晶体管阵列基板101上与所述外围区301对应的位置具有充足的空间可供导线（例如，所述第一导线）布置，无需缩减位于所述外围区301中的所述导线的线宽，从而可以避免所述导线出现断线缺陷。即，本发明能在所述显示面板的外围区301尺寸有限并且所述导线的数量固定的情况下，避免因缩减所述导线的线宽而导致所述导线出现断线缺陷。
此外，本发明还可以避免所述薄膜晶体管阵列基板中因跨线而导致的静电释放（ESD，Electro Static Discharge）现象。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种显示面板，其特征在于，所述显示面板设置有显示区和外围区，所述外围区设置于所述显示区的至少一侧，所述显示面板包括：
    薄膜晶体管阵列基板，所述薄膜晶体管阵列基板与所述显示区对应的位置处设置有电路器件，所述薄膜晶体管阵列基板与所述外围区对应的位置处设置有第一导线和导电构件，所述第一导线与所述电路器件连接；
    彩膜基板，所述彩膜基板与所述显示区对应的位置处设置有共通电极，所述彩膜基板与所述外围区对应的位置处设置有第二导线；以及
    液晶层，所述液晶层设置于所述薄膜晶体管阵列基板和所述彩膜基板之间；
    其中，所述第二导线用于在所述薄膜晶体管阵列基板与所述彩膜基板叠加组合为一体时，与所述导电构件以及所述第一导线相接触，以使所述导电构件与所述第一导线之间的电流通道导通；
    所述第一导线包括第一末端和第二末端，所述第二导线包括第三末端和第四末端，所述第一末端与所述电路器件连接，所述第三末端在所述彩膜基板中的位置与所述导电构件在所述薄膜晶体管阵列基板中的位置对应，所述第二末端在所述薄膜晶体管阵列基板中的位置与所述第四末端在所述彩膜基板中的位置对应；
    所述第一导线的表面设置有第一绝缘膜，所述第二导线的表面涂覆有第二绝缘膜；
    所述薄膜晶体管阵列基板与所述外围区对应的位置处还设置有第一转接构件和第二转接构件，所述第一转接构件与所述导电构件连接，所述第二转接构件与所述第一导线的所述第二末端连接；
    在所述薄膜晶体管阵列基板与所述彩膜基板叠加组合为一体时，所述第二导线的所述第三末端与所述第一转接构件相接触，所述第二导线的所述第四末端与所述第二转接构件相接触；
    所述彩膜基板与所述外围区对应的位置处还设置有第三转接构件和第四转接构件，所述第三转接构件与所述第二导线的所述第三末端连接，所述第四转接构件与所述第二导线的所述第四末端连接；
    在所述薄膜晶体管阵列基板与所述彩膜基板叠加组合为一体时，所述第三转接构件与所述第一转接构件相接触，所述第四转接构件与所述第二转接构件相接触。
  2. 根据权利要求1所述的显示面板，其特征在于，所述第一转接构件和所述第三转接构件之间还设置有第一弹性导电块；
    所述第二转接构件和所述第四转接构件之间还设置有第二弹性导电块。
  3. 根据权利要求1所述的显示面板，其特征在于，所述共通电极和所述第二导线是通过在所述彩膜基板与所述显示区和所述外围区对应的位置处设置第一电极层，并对所述第一电极层位于所述外围区的至少一部分进行激光切割来形成的。
  4. 根据权利要求1所述的显示面板，其特征在于，所述共通电极和所述第二导线是通过在所述彩膜基板与所述显示区和所述外围区对应的位置处设置第二电极层，并对所述第二电极层实施光罩制程，以及去除所述第二电极层中位于所述外围区的至少一部分来形成的。
  5. 一种显示面板，其特征在于，所述显示面板设置有显示区和外围区，所述外围区设置于所述显示区的至少一侧，所述显示面板包括：
    薄膜晶体管阵列基板，所述薄膜晶体管阵列基板与所述显示区对应的位置处设置有电路器件，所述薄膜晶体管阵列基板与所述外围区对应的位置处设置有第一导线和导电构件，所述第一导线与所述电路器件连接；
    彩膜基板，所述彩膜基板与所述显示区对应的位置处设置有共通电极，所述彩膜基板与所述外围区对应的位置处设置有第二导线；以及
    液晶层，所述液晶层设置于所述薄膜晶体管阵列基板和所述彩膜基板之间；
    其中，所述第二导线用于在所述薄膜晶体管阵列基板与所述彩膜基板叠加组合为一体时，与所述导电构件以及所述第一导线相接触，以使所述导电构件与所述第一导线之间的电流通道导通。
  6. 根据权利要求5所述的显示面板，其特征在于，所述第一导线包括第一末端和第二末端，所述第二导线包括第三末端和第四末端，所述第一末端与所述电路器件连接，所述第三末端在所述彩膜基板中的位置与所述导电构件在所述薄膜晶体管阵列基板中的位置对应，所述第二末端在所述薄膜晶体管阵列基板中的位置与所述第四末端在所述彩膜基板中的位置对应。
  7. 根据权利要求5或6所述的显示面板，其特征在于，所述薄膜晶体管阵列基板与所述外围区对应的位置处还设置有第一转接构件和第二转接构件，所述第一转接构件与所述导电构件连接，所述第二转接构件与所述第一导线的所述第二末端连接；
    在所述薄膜晶体管阵列基板与所述彩膜基板叠加组合为一体时，所述第二导线的所述第三末端与所述第一转接构件相接触，所述第二导线的所述第四末端与所述第二转接构件相接触。
  8. 根据权利要求7所述的显示面板，其特征在于，所述彩膜基板与所述外围区对应的位置处还设置有第三转接构件和第四转接构件，所述第三转接构件与所述第二导线的所述第三末端连接，所述第四转接构件与所述第二导线的所述第四末端连接；
    在所述薄膜晶体管阵列基板与所述彩膜基板叠加组合为一体时，所述第三转接构件与所述第一转接构件相接触，所述第四转接构件与所述第二转接构件相接触。
  9. 根据权利要求8所述的显示面板，其特征在于，所述第一转接构件和所述第三转接构件之间还设置有第一弹性导电块；
    所述第二转接构件和所述第四转接构件之间还设置有第二弹性导电块。
  10. 根据权利要求5所述的显示面板，其特征在于，所述第一导线的表面设置有第一绝缘膜，所述第二导线的表面涂覆有第二绝缘膜。
  11. 根据权利要求5所述的显示面板，其特征在于，所述共通电极和所述第二导线是通过在所述彩膜基板与所述显示区和所述外围区对应的位置处设置第一电极层，并对所述第一电极层位于所述外围区的至少一部分进行激光切割来形成的。
  12. 根据权利要求5所述的显示面板，其特征在于，所述共通电极和所述第二导线是通过在所述彩膜基板与所述显示区和所述外围区对应的位置处设置第二电极层，并对所述第二电极层实施光罩制程，以及去除所述第二电极层中位于所述外围区的至少一部分来形成的。
  13. 一种显示装置，其特征在于，所述显示装置包括：
    背光模组；以及
    显示面板，所述显示面板设置有显示区和外围区，所述外围区设置于所述显示区的至少一侧，所述显示面板包括：
    薄膜晶体管阵列基板，所述薄膜晶体管阵列基板与所述显示区对应的位置处设置有电路器件，所述薄膜晶体管阵列基板与所述外围区对应的位置处设置有第一导线和导电构件，所述第一导线与所述电路器件连接；
    彩膜基板，所述彩膜基板与所述显示区对应的位置处设置有共通电极，所述彩膜基板与所述外围区对应的位置处设置有第二导线；以及
    液晶层，所述液晶层设置于所述薄膜晶体管阵列基板和所述彩膜基板之间；
    其中，所述第二导线用于在所述薄膜晶体管阵列基板与所述彩膜基板叠加组合为一体时，与所述导电构件以及所述第一导线相接触，以使所述导电构件与所述第一导线之间的电流通道导通。
  14. 根据权利要求13所述的显示装置，其特征在于，所述第一导线包括第一末端和第二末端，所述第二导线包括第三末端和第四末端，所述第一末端与所述电路器件连接，所述第三末端在所述彩膜基板中的位置与所述导电构件在所述薄膜晶体管阵列基板中的位置对应，所述第二末端在所述薄膜晶体管阵列基板中的位置与所述第四末端在所述彩膜基板中的位置对应。
  15. 根据权利要求13或14所述的显示装置，其特征在于，所述薄膜晶体管阵列基板与所述外围区对应的位置处还设置有第一转接构件和第二转接构件，所述第一转接构件与所述导电构件连接，所述第二转接构件与所述第一导线的所述第二末端连接；
    在所述薄膜晶体管阵列基板与所述彩膜基板叠加组合为一体时，所述第二导线的所述第三末端与所述第一转接构件相接触，所述第二导线的所述第四末端与所述第二转接构件相接触。
  16. 根据权利要求15所述的显示装置，其特征在于，所述彩膜基板与所述外围区对应的位置处还设置有第三转接构件和第四转接构件，所述第三转接构件与所述第二导线的所述第三末端连接，所述第四转接构件与所述第二导线的所述第四末端连接；
    在所述薄膜晶体管阵列基板与所述彩膜基板叠加组合为一体时，所述第三转接构件与所述第一转接构件相接触，所述第四转接构件与所述第二转接构件相接触。
  17. 根据权利要求16所述的显示装置，其特征在于，所述第一转接构件和所述第三转接构件之间还设置有第一弹性导电块；
    所述第二转接构件和所述第四转接构件之间还设置有第二弹性导电块。
  18. 根据权利要求13所述的显示装置，其特征在于，所述第一导线的表面设置有第一绝缘膜，所述第二导线的表面涂覆有第二绝缘膜。
  19. 根据权利要求13所述的显示装置，其特征在于，所述共通电极和所述第二导线是通过在所述彩膜基板与所述显示区和所述外围区对应的位置处设置第一电极层，并对所述第一电极层位于所述外围区的至少一部分进行激光切割来形成的。
  20. 根据权利要求13所述的显示装置，其特征在于，所述共通电极和所述第二导线是通过在所述彩膜基板与所述显示区和所述外围区对应的位置处设置第二电极层，并对所述第二电极层实施光罩制程，以及去除所述第二电极层中位于所述外围区的至少一部分来形成的。
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