WO2018120108A1 - 顶发光型oled显示单元、制作方法及显示面板 - Google Patents

顶发光型oled显示单元、制作方法及显示面板 Download PDF

Info

Publication number
WO2018120108A1
WO2018120108A1 PCT/CN2016/113703 CN2016113703W WO2018120108A1 WO 2018120108 A1 WO2018120108 A1 WO 2018120108A1 CN 2016113703 W CN2016113703 W CN 2016113703W WO 2018120108 A1 WO2018120108 A1 WO 2018120108A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
layer
oled display
display unit
luminescent material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2016/113703
Other languages
English (en)
French (fr)
Inventor
唐岳军
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan China Star Optoelectronics Technology Co Ltd
Original Assignee
Wuhan China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuhan China Star Optoelectronics Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Technology Co Ltd
Priority to US15/327,135 priority Critical patent/US10276642B2/en
Publication of WO2018120108A1 publication Critical patent/WO2018120108A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/102—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising tin oxides, e.g. fluorine-doped SnO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/321—Inverted OLED, i.e. having cathode between substrate and anode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80522—Cathodes combined with auxiliary electrodes

Definitions

  • the present invention belongs to the field of display technologies, and in particular, to a top-emitting OLED display unit, a manufacturing method thereof, and a display panel.
  • OLED display devices have become more and more widely used due to their advantages of being lightweight, collapsible, wide viewing angle and low cost.
  • the OLED light-emitting display unit includes a first electrode 101 disposed on a substrate 1 and the first electrode 101. It is an anode and is a reflective electrode, and is simultaneously used as a pixel electrode in a display device, and is formed of a conductive metal having a high work function.
  • the anode is generally a two-layer structure comprising a reflective layer and a transparent layer.
  • the second electrode 301 is located above the luminescent material layer 201.
  • the second electrode 301 is a cathode and is formed of a conductive metal having a low work function.
  • the formation of the cathode electrode requires application of a common voltage to the pixel unit. Therefore, in order to facilitate application of a common voltage to all of the pixel units, the structure of the cathode electrode is in the form of a common electrode that is connected for each pixel unit.
  • the first electrode 101 needs a two-layer structure to ensure that light can be reflected, and the thickness of the second electrode 301 needs to be strictly controlled to ensure light transmission. Therefore, in the prior art process, the electrode layer material of the first electrode is consumed in a large amount, and the second electrode control process is complicated.
  • the present invention proposes a solution to the above problems.
  • One of the technical problems to be solved by the present invention is to simplify the work of the existing top-emitting OLED display unit. Art process to reduce material consumption.
  • an embodiment of the present application first provides a top-emitting type OLED display unit including a first electrode disposed above a flat layer adjacent to a substrate and composed of a conductive metal having a low work function, An electrode is used as a common electrode for reflecting light emitted by the luminescent material layer; a luminescent material layer is disposed above the first electrode for emitting light under the action of an applied electric field to form an image display; and the second electrode is disposed at the Above the luminescent material layer, it is composed of a conductive metal having a high work function, and the second electrode serves as a pixel electrode for transmitting light emitted by the luminescent material layer and light reflected by the first electrode.
  • the conductive metal having a low work function includes magnesium, calcium, aluminum, silver, or the conductive metal having a low work function is an alloy composed of at least two of magnesium, calcium, aluminum, and silver.
  • the thickness of the first electrode is configured such that the light reflectance of the first electrode is greater than 30%.
  • the second electrode is a transparent electrode.
  • the conductive metal having a high work function comprises indium tin oxide, indium zinc oxide, tin oxide or zinc oxide.
  • a pixel defining layer is further disposed between the first electrode and the second electrode, and a reserve electrode is disposed between the pixel defining layer and the flat layer, and the reserved electrode is in the flat layer
  • the first via is connected to the pixel voltage signal output of the driving circuit
  • the second electrode is connected to the reserved electrode via a second via in the pixel defining layer.
  • the reserved electrode and the first electrode are made of the same material.
  • an auxiliary electrode disposed under the pixel defining layer and disposed above the first electrode is further included.
  • Embodiments of the present application also provide a method for fabricating an OLED display unit, comprising: fabricating a first via in a planar layer adjacent to a substrate, the bottom of the first via being connected to a pixel voltage signal of a driver circuit An output end; a conductive metal layer for forming a first electrode is formed over the flat layer; the conductive metal layer is patterned to form a first electrode and a reserve electrode; and an auxiliary electrode is formed over the first electrode; Forming a pixel defining layer over the reserved electrode and the auxiliary electrode; forming a second via hole and a luminescent material layer receiving region in the pixel defining layer, and connecting a bottom of the second via hole to the reservation An electrode; a luminescent material layer is formed in the luminescent material layer receiving region; and a second electrode is formed over the pixel defining layer and the luminescent material layer.
  • a top emission type OLED display panel including the top emission type OLED is provided The display unit is connected to the first electrodes of the top emission type OLED display units.
  • the second electrode is disposed above the luminescent material layer, and the anode is used as the pixel electrode, and the cathode is a common electrode having a cavity structure and guiding the anode at the cavity position.
  • FIG. 1 is a schematic structural view of a conventional top-emitting OLED light-emitting display unit in the prior art
  • FIG. 2 is a schematic structural diagram of a top emission type OLED display unit according to an embodiment of the invention.
  • FIG. 3 is a schematic structural view of a driving unit of an OLED display unit
  • FIG. 4 is a schematic structural diagram of a top emission type OLED display unit according to another embodiment of the present invention.
  • FIG. 5 is a schematic flow chart of a method for fabricating a top-emitting OLED display unit according to still another embodiment of the present invention.
  • 6a-6e are schematic diagrams showing the fabrication of a top-emitting OLED display unit according to still another embodiment of the present invention.
  • each film layer in the figure is a substrate 1, a buffer layer 2, a gate insulating layer 3, and an interlayer layer from bottom to top.
  • the insulating layer 4, the flat layer 5, and the pixel defining layer 6, the top-emitting OLED display unit of the present embodiment includes a first electrode 10, a luminescent material layer 20, and a second electrode 30.
  • the first electrode 10 is disposed above the flat layer of the substrate 1, the first electrode 10 is a cathode, and the first electrode 10 is a reflective electrode for reflecting light emitted by the luminescent material layer 20.
  • the first electrode 10 is composed of a conductive metal having a low work function.
  • the metal may be selected from magnesium Mg, calcium Ca, aluminum Al, silver Ag or an alloy composed of at least two of magnesium, calcium, aluminum, and silver.
  • the first electrode 10 uses these materials to form a thickness sufficient to reflect light.
  • the thickness sufficient to reflect light here may be, for example, such that the light reflectance of the first electrode 10 is greater than 30%.
  • the first electrode 10 is used as a common electrode of the panel, and the first electrodes of the OLED display units are connected to each other as a whole, and receive a common electrode voltage signal.
  • the luminescent material layer 20 is disposed above the first electrode 10 and is mainly composed of an organic electroluminescent material, and can emit light under the action of an applied electric field to form an image display.
  • the second electrode 30 is disposed above the luminescent material layer 20, and the second electrode 30 is an anode.
  • the second electrode 30 is a transparent electrode, and is mainly used for transmitting light emitted by the luminescent material layer 20 and Light reflected by the first electrode 10.
  • the second electrode 30 serves as an anode and needs to be composed of a conductive metal having a high work function. Therefore, in the present embodiment, the electrode material layer for the second electrode 30 may be an indium tin oxide (ITO) layer and oxidized. An indium zinc (IZO) layer, a tin oxide (SnO) layer or a zinc oxide (ZnO) layer.
  • ITO indium tin oxide
  • IZO indium zinc
  • SnO tin oxide
  • ZnO zinc oxide
  • the second electrode 30 is used as a pixel electrode of the panel, and the second electrodes 30 of each OLED display unit can respectively receive different pixel voltage signals.
  • the second electrode 30 since the second electrode 30 is disposed above the first electrode 10 and the second electrode 30 is used as the transmissive electrode, the second electrode 30 can be fabricated by using a single layer structure, which can be significant The consumption of the electrode material of the second electrode 30 is saved.
  • the second electrode 30 is disposed above the first electrode 10 and the first electrode 10 is used as the reflective electrode, the thickness of the first electrode 10 is no longer required to be relatively strictly controlled, which is advantageous for Simplify the manufacture of panels to increase productivity.
  • the cathode (first electrode) covering all the pixel electrodes (second electrode, anode) in a large display must be subjected to strict thickness control, the wire resistance is increased to cause a voltage drop, which causes uneven illumination of the display and And power consumption increases.
  • the first electrode (cathode) serves as a reflective electrode, and not only does not need to perform relatively strict thickness control, but also needs to form a sufficient thickness to have the characteristic of reflecting light, thereby contributing to reducing cathode resistance and reducing Illumination unevenness and power consumption caused by voltage drop are generated.
  • a reserve electrode 40 is further disposed between the pixel defining layer 6 and the flat layer 5 between the first electrode 10 and the second electrode 30.
  • the reserve electrode 40 is connected to the pixel voltage signal output end of the driving circuit via the first via 41 in the flat layer 5, specifically the source and drain of the TFT switch.
  • the second electrode 30 is connected to the reserve electrode 40 via the second via 31 in the pixel defining layer 6.
  • the pixel voltage signal output end of the driving circuit in the embodiment is actually one transistor (T2) in the driving unit of the OLED display unit composed of a plurality of thin film transistors 7, for example, in FIG. 7 shows the location.
  • a driving unit circuit may be located in each pixel region, and a plurality of wires including a scanning line S, a data line D, and a Vdd line V may be coupled to the driving unit.
  • the circuit is electrically connected.
  • various wires may be further provided in addition to the scan line S, the data line D, and the Vdd line V (ie, the driving power source) according to the configuration of the driving unit circuit.
  • the driving unit circuit may include a first TFT T1 connected to the scan line S and the data line D, a second TFT T2 connected to the first TFT T1 and the Vdd line V, and the first TFT T1 and the Two TFT T2 connected capacitors Cst.
  • the first TFT T1 may function as a switching transistor
  • the second TFT T2 may function as a driving transistor.
  • the second electrode 30 is electrically connected to the second TFT T2.
  • the number of TFTs and the number of capacitors are not limited to the number shown in FIG. Depending on the configuration of the drive unit circuit, a combination of two or more TFTs and one or more capacitors may also be provided. Further, in conjunction with the positions of the broken line frames in other drawings in the present application, the dotted frame area not indicated by the reference numeral may be the position of the first TFT T1, located below the luminescent material layer without affecting the luminescent display.
  • the reserve electrode 40 and the first electrode 10 are made of the same material. Generally, the reserving electrode 40 and the first electrode 10 can be fabricated in the same process. For details, refer to the related content of the OLED display unit.
  • FIG. 4 is a schematic structural view of a top-emission type OLED display unit according to another embodiment of the present invention. As shown in the figure, in the embodiment, under the pixel defining layer 6, at the same time, the first electrode 10 is further disposed. There is an auxiliary electrode 50.
  • the auxiliary electrode 50 may be made of the same material as the first electrode, or may be selected from other conductive metal materials, which is not limited in this embodiment.
  • the auxiliary electrode 50 is fabricated prior to the luminescent material layer 20, so that damage to the luminescent material layer 20 can be avoided. The effect of aging, simplifying the production process, and facilitating the fabrication of the auxiliary electrode 50.
  • FIG. 5 is a schematic flow chart of a method for fabricating a top-emitting OLED display unit according to still another embodiment of the present invention. As shown in the figure, the method includes the following steps:
  • Step S510 forming a first via hole in the flat layer near the substrate, and connecting the bottom of the first via hole to the pixel voltage signal output end of the driving circuit, as shown in FIG. 6a.
  • Step S520 forming a conductive metal layer for constituting the first electrode over the flat layer.
  • Step S530 patterning the conductive metal layer to form a first electrode and a reserved electrode.
  • the first electrodes other than the reserved electrodes are connected, and the reserved electrodes are in the form of islands, and the first vias are simultaneously filled when the reserved electrodes are formed. Therefore, the formed reserve electrodes are formed.
  • the first via is connected to the pixel voltage signal output terminal of the driving circuit, that is, the source and drain of the thin film transistor.
  • Step S540 forming an auxiliary electrode above the first electrode.
  • Step S550 forming a pixel defining layer above the reserved electrode and the auxiliary electrode.
  • Step S560 forming a second via hole and a luminescent material layer receiving region in the pixel defining layer, and connecting the bottom of the second via hole to the reserved electrode, as shown in FIG. 6c.
  • Step S570 forming a layer of luminescent material in the luminescent material layer receiving region, as shown in FIG. 6d.
  • Step S580 forming a second electrode above the pixel defining layer and the luminescent material layer.
  • the metal material simultaneously fills the inside of the second via hole, and thus the formed second electrode is connected to the reserve electrode via the second via hole.
  • Step S530 patterning the conductive metal layer to form a reserved area of the first electrode and the reserved electrode. Reserved The electrode-free area has no electrode layer, leaving room for subsequent reserved electrode fabrication.
  • Step S540 preparing the auxiliary electrode and the reserved electrode, forming an auxiliary electrode above the first electrode, and forming a reserved electrode in the reserved area by using the auxiliary electrode material, and the specific method may be performed by etching after forming an auxiliary electrode material.
  • the auxiliary electrodes other than the reserved electrodes are connected, the reserved electrodes are in the form of islands, and the first via holes are simultaneously filled when the reserved electrodes are formed, and therefore, the formed reserve electrodes are connected to the driving circuit via the first via holes
  • the pixel voltage signal output terminal that is, the source and drain of the thin film transistor are connected.
  • Poly-Si is used as the semiconductor active layer in the schematic diagram of the embodiment of the present invention, but is not limited thereto, and the semiconductor active layer may also be IGZO or a-Si or the like.
  • the TFT of the top gate structure is shown in the schematic diagram of the embodiment of the present invention, but is not limited thereto.
  • the TFT structure may also be a TFT device structure suitable for the bottom gate type and other semiconductor active layers.
  • the pixel electrode which is patterned by providing the anode is located above the light-emitting layer
  • the cathode is a common electrode having a cavity structure and guiding the anode at the cavity position, so that the anode located above the layer of the light-emitting material only needs to be made one layer.
  • the high work function transparent electrode simplifies anode fabrication and reduces electrode material consumption.
  • the cathode is a common electrode and is located below the luminescent material layer, facilitating the fabrication of the auxiliary electrode.
  • the present invention is exemplified by a top-emission type OLED display, but is not limited thereto, and may be, for example, a transparent OLED display or the like.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种顶发光型OLED显示单元、制作方法及显示面板，顶发光型OLED显示单元，包括第一电极(10)，第一电极(10)作为公共电极；发光材料层(20)，设置于第一电极(10)上方；第二电极(30)，设置于发光材料层(20)上方，第二电极(30)作为像素电极。这样的OLED显示单元能够简化第一电极(10)和第二电极(30)的工艺制程，且有利于减小电极材料的消耗。

Description

顶发光型OLED显示单元、制作方法及显示面板
相关申请的交叉引用
本申请要求享有2016年12月27日提交的名称为“顶发光型OLED显示单元、制作方法及显示面板”的中国专利申请CN201611227134.2的优先权，该申请的全部内容通过引用并入本文中。
技术领域
本发明属于显示技术领域，尤其涉及一种顶发光型OLED显示单元、制作方法及显示面板。
背景技术
有机发光二极管(Organic Light Emitting Display，OLED)显示装置因其具有轻便、可折叠、视角广以及成本低等优点而获得了越来越广泛的应用。
图1为现有技术中一种常用的顶发光型OLED发光显示单元的结构示意图，如图所示，该OLED发光显示单元包括，设置于基底1上的第一电极101，该第一电极101为阳极，且为反射电极，同时用于作为显示装置中的像素电极，由具有高功函的导电金属制作形成。阳极一般为包含反射层和透明层构成的双层结构。位于发光材料层201上方的第二电极301，该第二电极301为阴极，由具有低功函的导电金属制作形成。与阳极电极不同的是，阴极电极的形成需要对像素单元施加常用电压。因此，为便于对所有像素单元施加常用电压，阴极电极的结构为对于每一像素单元而言是连通的公共电极的形式。
从上述顶发光型OLED发光显示单元的结构可知，第一电极101需要双层结构，以保证光线能够被反射出来，第二电极301的厚度需要严格控制，以保证光线能够透过。因此导致现有工艺制程中，第一电极的电极层材料使用消耗较大，第二电极控制工艺较为复杂。
本发明针对上述问题提出解决方案。
发明内容
本发明所要解决的技术问题之一是简化现有顶发光型OLED显示单元的工 艺制程，减少材料消耗。
为了解决上述技术问题，本申请的实施例首先提供了一种顶发光型OLED显示单元，包括第一电极，设置于靠近基底的平坦层上方，由具有低功函的导电金属构成，所述第一电极作为公共电极，用于反射发光材料层发出的光；发光材料层，设置于所述第一电极上方，用于在外加电场的作用下发光以形成图像显示；第二电极，设置于所述发光材料层上方，由具有高功函的导电金属构成，所述第二电极作为像素电极，用于透射所述发光材料层发出的光以及所述第一电极反射的光。
优选地，所述具有低功函的导电金属包括镁、钙、铝、银，或者所述具有低功函的导电金属为由镁、钙、铝、银中的至少两种组成的合金。
优选地，所述第一电极的厚度被配置成使所述第一电极的光反射率大于30％。
优选地，所述第二电极为透明电极。
优选地，所述具有高功函的导电金属包括氧化铟锡、氧化铟锌、氧化锡或者氧化锌。
优选地，在所述第一电极与第二电极之间还设置有像素限定层，在所述像素限定层与所述平坦层之间设置有预留电极，所述预留电极经由平坦层中的第一过孔与驱动电路的像素电压信号输出端相连接，所述第二电极经由像素限定层中的第二过孔与所述预留电极相连接。
优选地，所述预留电极与所述第一电极采用同种材料制作。
优选地，还包括设置在所述像素限定层的下方并设置在所述第一电极的上方的辅助电极。
本申请的实施例还提供了一种用于制作OLED显示单元的方法，包括：在靠近基底的平坦层中制作第一过孔，所述第一过孔的底部连通至驱动电路的像素电压信号输出端；在所述平坦层上方形成用于构成第一电极的导电金属层；图案化所述导电金属层，以形成第一电极与预留电极；在所述第一电极上方形成辅助电极；在所述预留电极与辅助电极上方形成像素限定层；在所述像素限定层中形成第二过孔和发光材料层容纳区，并使所述第二过孔的底部连通至所述预留电极；在所述发光材料层容纳区内形成发光材料层；在所述像素限定层与所述发光材料层上方形成第二电极。
另一方面，提供了一种顶发光型OLED显示面板，包括所述顶发光型OLED 显示单元，各顶发光型OLED显示单元的第一电极相互连接。
与现有技术相比，上述方案中的一个或多个实施例可以具有如下优点或有益效果：
通过将第一电极(阴极)设置在发光材料层下方，将第二电极(阳极)设置在发光材料层上方，且以阳极作为像素电极，阴极为具有空洞结构并在空洞位置引导阳极的公共电极，简化了第一电极和第二电极的工艺制程，且有利于减小电极材料的消耗。
本发明的其他优点、目标，和特征在某种程度上将在随后的说明书中进行阐述，并且在某种程度上，基于对下文的考察研究对本领域技术人员而言将是显而易见的，或者可以从本发明的实践中得到教导。本发明的目标和其他优点可以通过下面的说明书，权利要求书，以及附图中所特别指出的结构来实现和获得。
附图说明
附图用来提供对本申请的技术方案或现有技术的进一步理解，并且构成说明书的一部分。其中，表达本申请实施例的附图与本申请的实施例一起用于解释本申请的技术方案，但并不构成对本申请技术方案的限制。
图1为现有技术中一种常用的顶发光型OLED发光显示单元的结构示意图；
图2为根据本发明一实施例的顶发光型OLED显示单元的结构示意图；
图3为OLED显示单元的驱动单元的结构示意图；
图4为根据本发明另一实施例的顶发光型OLED显示单元的结构示意图；
图5为根据本发明再一实施例的顶发光型OLED显示单元的制作方法的流程示意图；
图6a-图6e为根据本发明再一实施例的顶发光型OLED显示单元的制作示意图。
具体实施方式
以下将结合附图及实施例来详细说明本发明的实施方式，借此对本发明如何应用技术手段来解决技术问题，并达成相应技术效果的实现过程能充分理解并据以实施。本申请实施例以及实施例中的各个特征，在不相冲突前提下可以相互结 合，所形成的技术方案均在本发明的保护范围之内。
图2为根据本发明一实施例的顶发光型OLED显示单元的结构示意图，如图所示，图中各膜层从下至上依次为基底1，缓冲层2、栅极绝缘层3、层间绝缘层4、平坦层5以及像素限定层6，本实施例的顶发光型OLED显示单元包括第一电极10、发光材料层20与第二电极30。
第一电极10设置于靠近基底1的平坦层上方，第一电极10是阴极,并且第一电极10为反射电极，用于反射发光材料层20发出的光。
第一电极10由具有低功函的导电金属构成。例如,该金属可选自镁Mg、钙Ca、铝Al、银Ag或者为由镁、钙、铝、银中的至少两种组成的合金。且第一电极10使用这些材料形成足以反光的厚度。这里所说足以反光的厚度可以例如是使第一电极10的光反射率大于30％。
在利用本实施例中的OLED显示单元构成显示面板时，第一电极10作为面板的公共电极使用，各OLED显示单元的第一电极相互连接成为一整体，并且接受公共电极电压信号。
发光材料层20设置于第一电极10上方，主要由有机电致发光材料构成，可以在外加电场的作用下发光以形成图像显示。
第二电极30设置于发光材料层20的上方，第二电极30为阳极，对于顶发光型OLED显示单元，第二电极30为透明电极，主要用于透射由发光材料层20所发出的光以及由第一电极10所反射的光。
同时，第二电极30作为阳极，需要由具有高功函的导电金属构成，因此，在本实施例中，用于第二电极30的电极材料层可选为氧化铟锡(ITO)层、氧化铟锌(IZO)层、氧化锡(SnO)层或氧化锌(ZnO)层。
在利用本实施例中的OLED显示单元构成显示面板时，第二电极30作为面板的像素电极使用，各OLED显示单元的第二电极30可以分别接收不同的像素电压信号。
在本发明实施例中，由于将第二电极30设置在第一电极10的上方，并以第二电极30作为透射电极，因此，第二电极30只需采用单层结构制作即可，可以显著地节省第二电极30的电极材料的消耗。
在本发明实施例中，由于将第二电极30设置在第一电极10的上方，并以第一电极10作为反射电极，因此第一电极10的厚度不再需要进行相对严格的控制，有利于简化面板的制成，提高产率。
另外，由于在大型显示器中覆盖所有像素电极(第二电极、阳极)的阴极(第一电极)必须进行严格的厚度控制，因此会增加导线电阻而产生电压降，将导致显示器的发光不均匀和以及功耗增加。而在本发明实施例中，第一电极(阴极)作为反射电极，不但不需要进行相对严格的厚度控制，还需要形成足够的厚度以便具有反射光线的特性，因此有利于降低阴极电阻，减小产生电压降导致的发光不均匀和功耗增加。
进一步如图2所示，在第一电极10与第二电极30之间的像素限定层6与平坦层5之间还设置有预留电极40。预留电极40经由平坦层5中的第一过孔41与驱动电路的像素电压信号输出端相连接，具体的为TFT开关的源漏极。第二电极30经由像素限定层6中的第二过孔31与预留电极40相连接。
需要注意的是，在本实施例中所说的驱动电路的像素电压信号输出端，实际为由多个薄膜晶体管7组成的OLED显示单元的驱动单元中的一个晶体管(T2)，例如图2中7所示出的位置。
图3为OLED显示单元的驱动单元的结构示意图，如图所示，驱动单元电路可以位于每一像素区域中，并且多个包括扫描线S、数据线D和Vdd线V的导线可以与驱动单元电路电连接。在某些实施方案中，根据驱动单元电路的配置，除了扫描线S、数据线D和Vdd线V(即驱动电源)可以进一步提供各种导线。
如图3所示，驱动单元电路可以包括与扫描线S和数据线D连接的第一TFT T1、与第一TFT T1和Vdd线V连接的第二TFT T2，以及与第一TFT T1和第二TFT T2连接的电容器Cst。此处，第一TFT T1可以用作开关晶体管，并且第二TFT T2可以用作驱动晶体管。而在前述实施例中，第二电极30正是与第二TFT T2电连接。
TFT的数量和电容器的数量不限于图3所示的数量。根据驱动单元电路的配置,还可以提供两个或多个的TFT和一个或多个电容器的组合。进一步结合结合本申请中其他附图中虚线框的位置可知，未以标号标示的虚线框区域可以为第一TFT T1的位置，位于发光材料层下方而不影响发光显示。
需要说明的是，上述内容仅用于说明本发明的具体的实施方式，并不构成对本发明的限定。
进一步地，预留电极40与第一电极10采用同种材料制作。且一般可以将预留电极40与第一电极10在同一工艺制程中制作完成，具体请参见本申请后面关于OLED显示单元的制作方法的相关内容。
图4示出本发明另一实施例的顶发光型OLED显示单元的结构示意图，如图所示，在该实施例中，在像素限定层6的下方，同时在第一电极10的上方还设置有一个辅助电极50。
由于在大型显示器中覆盖所有像素电极(第二电极、阳极)的阴极(第一电极)增加的导线电阻产生电压降，将导致显示器的发光不均匀和以及功耗增加，通过设置辅助电极50可以减小由于产生电压降二导致的发光不均匀和功耗的增加。
辅助电极50可以采用与第一电极相同的材料进行制作，也可以选择其他的导电金属材料，本实施例中对其不作限定。
由于本发明实施例的OLED显示单元的第一电极10设置在发光材料层20的下方，辅助电极50的制作会先于发光材料层20的制作，这样就可以避免对发光材料层20产生破坏或老化影响，简化生产工艺，便于辅助电极50的制作。
图5为根据本发明再一实施例的顶发光型OLED显示单元的制作方法的流程示意图，如图所示，具体包括以下步骤：
步骤S510、在靠近基底的平坦层中制作第一过孔，且使该第一过孔的底部连通至驱动电路的像素电压信号输出端，如图6a所示。
步骤S520、在平坦层上方形成用于构成第一电极的导电金属层。
步骤S530、图案化导电金属层，以形成第一电极与预留电极。如图6b所示，除预留电极以外的其他第一电极是连通的，预留电极为孤岛的形式，且在制作预留电极时同时填充第一过孔，因此，形成的预留电极经由第一过孔与驱动电路的像素电压信号输出端，即薄膜晶体管的源漏极相连接。
步骤S540、在第一电极上方形成辅助电极。
步骤S550、在预留电极与辅助电极上方形成像素限定层。
步骤S560、在像素限定层中形成第二过孔和发光材料层容纳区，并使第二过孔的底部连通至预留电极，如图6c所示。
步骤S570、在发光材料层容纳区内形成发光材料层，如图6d所示。
步骤S580、在像素限定层与发光材料层上方形成第二电极。如图6e所示，在形成第二电极时，金属材料同时填充第二过孔内部，因此形成的第二电极经由第二过孔与预留电极相连接。
在上述制作步骤S530和S540中，还可以是：
步骤S530、图案化导电金属层，以形成第一电极与预留电极的预留区。预留 电极的预留区无电极层，为后续预留电极制作留下空间。
步骤S540、辅助电极和预留电极制作，在第一电极上方形成辅助电极，用辅助电极材料在预留区制作预留电极，具体方法可以为制作一层辅助电极材料后通过蚀刻的的方法留出辅助电极的和预留电极的图案。除预留电极以外的其他辅助电极是连通的，预留电极为孤岛的形式，且在制作预留电极时同时填充第一过孔，因此，形成的预留电极经由第一过孔与驱动电路的像素电压信号输出端，即薄膜晶体管的源漏极相连接。
需要注意的是，在本发明实施例示意图中示出了Poly-Si作为半导体活性层，但并不限于此，半导体活性层还可以采用IGZO或者a-Si等。本发明实施例示意图中示出了顶栅型结构的TFT，但并不限于此，TFT结构还可以是底栅型以及其他半导体活性层适用的TFT器件结构。
在本发明实施例中，通过设置阳极为图案化的像素电极位于发光层上方，阴极为具有空洞结构并在空洞位置引导阳极的公共电极，使得位于发光材料层上方的阳极，只需要制作一层高功函的透明电极，可以简化阳极制作和减小电极材料消耗。同时，阴极为公共电极且位于发光材料层下方，便于辅助电极的制作。
本发明以顶发光型OLED显示器做为示例，但并不限于此，例如还可以为透明OLED显示器等。
虽然本发明所揭露的实施方式如上，但所述的内容只是为了便于理解本发明而采用的实施方式，并非用以限定本发明。任何本发明所属技术领域内的技术人员，在不脱离本发明所揭露的精神和范围的前提下，可以在实施的形式上及细节上作任何的修改与变化，但本发明的专利保护范围，仍须以所附的权利要求书所界定的范围为准。

Claims (17)

  1. 一种顶发光型OLED显示单元，包括：
    第一电极，设置于靠近基底的平坦层上方，由具有低功函的导电金属构成，所述第一电极作为公共电极，用于反射发光材料层发出的光；
    发光材料层，设置于所述第一电极上方，用于在外加电场的作用下发光以形成图像显示；
    第二电极，设置于所述发光材料层上方，由具有高功函的导电金属构成，所述第二电极作为像素电极，用于透射所述发光材料层发出的光以及所述第一电极反射的光。
  2. 根据权利要求1所述的OLED显示单元，其中，所述具有低功函的导电金属包括镁、钙、铝、银，或者
    所述具有低功函的导电金属为由镁、钙、铝、银中的至少两种组成的合金。
  3. 根据权利要求1所述的OLED显示单元，其中，所述第一电极的厚度被配置成使所述第一电极的光反射率大于30％。
  4. 根据权利要求1所述的OLED显示单元，其中，所述第二电极为透明电极。
  5. 根据权利要求4所述的OLED显示单元，其中，所述具有高功函的导电金属包括氧化铟锡、氧化铟锌、氧化锡或者氧化锌。
  6. 根据权利要求1所述的OLED显示单元，其中，在所述第一电极与第二电极之间还设置有像素限定层，在所述像素限定层与所述平坦层之间设置有预留电极，所述预留电极经由平坦层中的第一过孔与驱动电路的像素电压信号输出端相连接，所述第二电极经由像素限定层中的第二过孔与所述预留电极相连接。
  7. 根据权利要求6所述的OLED显示单元，其中，所述预留电极与所述第一电极采用同种材料制作。
  8. 根据权利要求7所述的OLED显示单元，其中，还包括设置在所述像素限定层的下方并设置在所述第一电极的上方的辅助电极。
  9. 一种用于制作OLED显示单元的方法，包括：
    在靠近基底的平坦层中制作第一过孔，所述第一过孔的底部连通至驱动电路的像素电压信号输出端；
    在所述平坦层上方形成用于构成第一电极的导电金属层；
    图案化所述导电金属层，以形成第一电极与预留电极；
    在所述第一电极上方形成辅助电极；
    在所述预留电极与辅助电极上方形成像素限定层；
    在所述像素限定层中形成第二过孔和发光材料层容纳区，并使所述第二过孔的底部连通至所述预留电极；
    在所述发光材料层容纳区内形成发光材料层；
    在所述像素限定层与所述发光材料层上方形成第二电极。
  10. 一种顶发光型OLED显示面板，包括顶发光型OLED显示单元，
    所述顶发光型OLED显示单元，包括：
    第一电极，设置于靠近基底的平坦层上方，由具有低功函的导电金属构成，所述第一电极作为公共电极，用于反射发光材料层发出的光；
    发光材料层，设置于所述第一电极上方，用于在外加电场的作用下发光以形成图像显示；
    第二电极，设置于所述发光材料层上方，由具有高功函的导电金属构成，所述第二电极作为像素电极，用于透射所述发光材料层发出的光以及所述第一电极反射的光；
    各顶发光型OLED显示单元的第一电极相互连接。
  11. 根据权利要求10所述的OLED显示面板，其中，所述具有低功函的导电金属包括镁、钙、铝、银，或者
    所述具有低功函的导电金属为由镁、钙、铝、银中的至少两种组成的合金。
  12. 根据权利要求10所述的OLED显示面板，其中，所述第一电极的厚度被配置成使所述第一电极的光反射率大于30％。
  13. 根据权利要求10所述的OLED显示面板，其中，所述第二电极为透明电极。
  14. 根据权利要求13所述的OLED显示面板，其中，所述具有高功函的导电金属包括氧化铟锡、氧化铟锌、氧化锡或者氧化锌。
  15. 根据权利要求10所述的OLED显示面板，其中，在所述第一电极与第二电极之间还设置有像素限定层，在所述像素限定层与所述平坦层之间设置有预留电极，所述预留电极经由平坦层中的第一过孔与驱动电路的像素电压信号输出端相连接，所述第二电极经由像素限定层中的第二过孔与所述预留电极相连接。
  16. 根据权利要求15所述的OLED显示面板，其中，所述预留电极与所述第一电极采用同种材料制作。
  17. 根据权利要求16所述的OLED显示面板，其中，还包括设置在所述像素限定层的下方并设置在所述第一电极的上方的辅助电极。
PCT/CN2016/113703 2016-12-27 2016-12-30 顶发光型oled显示单元、制作方法及显示面板 Ceased WO2018120108A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/327,135 US10276642B2 (en) 2016-12-27 2016-12-30 Top-emitting OLED display unit, method for manufacturing the same, and display panel

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201611227134.2A CN106654048B (zh) 2016-12-27 2016-12-27 顶发光型oled显示单元、制作方法及显示面板
CN201611227134.2 2016-12-27

Publications (1)

Publication Number Publication Date
WO2018120108A1 true WO2018120108A1 (zh) 2018-07-05

Family

ID=58831536

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2016/113703 Ceased WO2018120108A1 (zh) 2016-12-27 2016-12-30 顶发光型oled显示单元、制作方法及显示面板

Country Status (3)

Country Link
US (1) US10276642B2 (zh)
CN (1) CN106654048B (zh)
WO (1) WO2018120108A1 (zh)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108364976A (zh) * 2017-09-25 2018-08-03 广东聚华印刷显示技术有限公司 顶发射显示面板、显示装置及其制作方法
CN108962936B (zh) * 2017-12-11 2021-03-30 广东聚华印刷显示技术有限公司 像素界定结构及其制作方法、显示面板
CN108806593A (zh) * 2018-05-31 2018-11-13 厦门天马微电子有限公司 一种有机发光显示面板及显示装置
US11387305B2 (en) * 2018-08-10 2022-07-12 Boe Technology Group Co., Ltd. Display substrate, display panel, display apparatus, and method of fabricating display substrate
CN110993643A (zh) * 2019-11-05 2020-04-10 深圳市华星光电半导体显示技术有限公司 Oled显示面板
CN110853509B (zh) * 2019-10-16 2021-04-27 Tcl华星光电技术有限公司 显示面板及其制备方法
CN111063813B (zh) * 2019-12-05 2021-02-02 深圳市华星光电半导体显示技术有限公司 一种oled器件结构及其制备方法
CN111146256B (zh) * 2019-12-13 2023-08-22 固安翌光科技有限公司 一种高稳定性有机发光二极管
US11869411B2 (en) 2019-12-20 2024-01-09 Hefei Boe Joint Technology Co., Ltd. Display substrate, manufacturing method thereof, and display device
US12284885B2 (en) * 2020-03-25 2025-04-22 Chengdu Boe Optoelectronics Technology Co., Ltd. Display substrate and display device capable of avoiding color cast
KR102839630B1 (ko) * 2020-12-30 2025-07-28 엘지디스플레이 주식회사 표시 장치
WO2024113102A1 (zh) 2022-11-28 2024-06-06 京东方科技集团股份有限公司 显示基板和显示装置
KR20250063814A (ko) * 2023-10-27 2025-05-09 삼성디스플레이 주식회사 표시 패널
KR20250076715A (ko) * 2023-11-22 2025-05-30 삼성디스플레이 주식회사 표시 패널 및 이의 제조 방법
CN119255661B (zh) * 2024-09-18 2025-09-30 Tcl华星光电技术有限公司 显示面板及其制备方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130044095A1 (en) * 2011-08-18 2013-02-21 Samsung Mobile Display Co., Ltd. Organic light emitting display device and method for manufacturing the same
CN103928474A (zh) * 2014-03-28 2014-07-16 京东方科技集团股份有限公司 一种阵列基板及其制备方法和显示面板
CN104253148A (zh) * 2014-09-23 2014-12-31 京东方科技集团股份有限公司 一种有机发光二极管阵列基板及其制作方法、显示装置
US20150028292A1 (en) * 2013-07-25 2015-01-29 Samsung Display Co., Ltd. Organic light-emitting display device and manufacturing method thereof
CN105932028A (zh) * 2016-06-07 2016-09-07 深圳市华星光电技术有限公司 自发光显示装置
CN106098710A (zh) * 2016-08-29 2016-11-09 京东方科技集团股份有限公司 一种阵列基板及其制备方法、显示装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI257496B (en) * 2001-04-20 2006-07-01 Toshiba Corp Display device and method of manufacturing the same
KR100623844B1 (ko) * 2004-04-30 2006-09-19 엘지.필립스 엘시디 주식회사 유기전계발광 소자 및 그 제조방법
US8053971B2 (en) * 2006-07-31 2011-11-08 Lg Display Co., Ltd. Organic light emitting device and method of fabricating the same
WO2011055631A1 (en) * 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN102664187B (zh) * 2012-05-29 2016-01-20 南京中电熊猫液晶显示科技有限公司 有机发光二极管显示器及其制造方法
CN102779830B (zh) * 2012-06-12 2015-02-04 南京中电熊猫液晶显示科技有限公司 一种金属氧化物的显示装置及其制造方法
KR20150004091A (ko) * 2013-07-02 2015-01-12 삼성디스플레이 주식회사 유기전계발광 표시장치 및 그의 제조방법
CN103715205B (zh) * 2013-12-31 2016-04-13 京东方科技集团股份有限公司 Amoled阵列基板及显示装置
CN105118850A (zh) * 2015-09-22 2015-12-02 深圳市华星光电技术有限公司 一种有源矩阵有机发光二极体基板及其显示装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130044095A1 (en) * 2011-08-18 2013-02-21 Samsung Mobile Display Co., Ltd. Organic light emitting display device and method for manufacturing the same
US20150028292A1 (en) * 2013-07-25 2015-01-29 Samsung Display Co., Ltd. Organic light-emitting display device and manufacturing method thereof
CN103928474A (zh) * 2014-03-28 2014-07-16 京东方科技集团股份有限公司 一种阵列基板及其制备方法和显示面板
CN104253148A (zh) * 2014-09-23 2014-12-31 京东方科技集团股份有限公司 一种有机发光二极管阵列基板及其制作方法、显示装置
CN105932028A (zh) * 2016-06-07 2016-09-07 深圳市华星光电技术有限公司 自发光显示装置
CN106098710A (zh) * 2016-08-29 2016-11-09 京东方科技集团股份有限公司 一种阵列基板及其制备方法、显示装置

Also Published As

Publication number Publication date
CN106654048B (zh) 2019-01-25
CN106654048A (zh) 2017-05-10
US10276642B2 (en) 2019-04-30
US20180212008A1 (en) 2018-07-26

Similar Documents

Publication Publication Date Title
WO2018120108A1 (zh) 顶发光型oled显示单元、制作方法及显示面板
US9825106B2 (en) OLED display substrate and method for manufacturing the same, and display apparatus
CN103456763B (zh) 有机发光二极管显示器
US10333096B2 (en) OLED display unit and method for manufacturing the same
US7575966B2 (en) Method for fabricating pixel structure of active matrix organic light-emitting diode
CN113130587B (zh) 有机发光二极管显示装置及其制造方法
US20180190741A1 (en) Display panel and display device
US11424307B2 (en) Organic light-emitting diode apparatus with color film shielding layer, fabrication method thereof, display panel, and display apparatus
CN110047874B (zh) 显示装置
US20150014658A1 (en) Organic light emitting diode display and method for manufacturing the same
CN106206673A (zh) Amoled显示装置
WO2015043269A1 (zh) Oled像素结构和oled显示装置
JP2005310782A (ja) 有機発光ダイオードを用いたディスプレイパネル
CN108269835A (zh) 显示基板及其制作方法、显示装置
CN107819016B (zh) 显示面板和显示装置
CN103985736A (zh) Amoled阵列基板及制作方法和显示装置
WO2013091520A1 (zh) 双面有机发光二极管及其制造方法、显示装置
CN110797384B (zh) 阵列基板、显示面板及阵列基板的制作方法
CN110164942A (zh) 一种显示面板及其制备方法、显示装置
CN104681587A (zh) 有机发光显示装置及其制造方法
KR102037374B1 (ko) 유기 발광 표시 장치 및 유기 발광 표시 장치 제조 방법
CN110571245B (zh) 显示面板及其制作方法
KR20100137272A (ko) 유기전계발광 표시장치 및 그 제조방법
KR20220111817A (ko) 표시 장치 및 그 제조 방법
JP2008218330A (ja) 有機ｅｌ表示装置

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 15327135

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16925326

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 16925326

Country of ref document: EP

Kind code of ref document: A1