WO2018101767A1 - Module d'antennes ems, son procédé de fabrication, et ensemble semi-conducteur le comprenant - Google Patents
Module d'antennes ems, son procédé de fabrication, et ensemble semi-conducteur le comprenant Download PDFInfo
- Publication number
- WO2018101767A1 WO2018101767A1 PCT/KR2017/013910 KR2017013910W WO2018101767A1 WO 2018101767 A1 WO2018101767 A1 WO 2018101767A1 KR 2017013910 W KR2017013910 W KR 2017013910W WO 2018101767 A1 WO2018101767 A1 WO 2018101767A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- ems
- encapsulant
- antenna module
- radiation angle
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/24—Supports; Mounting means by structural association with other equipment or articles with receiving set
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/24—Supports; Mounting means by structural association with other equipment or articles with receiving set
- H01Q1/241—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM
- H01Q1/242—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM specially adapted for hand-held use
- H01Q1/243—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM specially adapted for hand-held use with built-in antennas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6661—High-frequency adaptations for passive devices
- H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/24153—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
- H01L2224/24195—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being a discrete passive component
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
Definitions
- the present invention relates to an EMS antenna module, a method for manufacturing the same, and a semiconductor package including the same. More particularly, the present invention relates to an EMS antenna module capable of adjusting a signal emission angle of an antenna, thereby improving signal transmission speed and distance, A semiconductor package capable of preventing signal interference.
- Electromagnetic Compatibility or Electromagnetic Compatibility refers to the ability of an electromagnetic wave from a device that generates electromagnetic waves to function normally without the effects of electromagnetic waves from other devices. Electrons are called electromagnetic interference or electromagnetic interference (EMI). Unnecessary electromagnetic waves, which are incidentally generated from electronic devices, are radiated into spaces or conducted through power lines, causing electromagnetic interference to devices or other devices. . The latter is called electromagnetic immunity or electromagnetic susceptibility (EMS), and the ability of an equipment or system to operate without degradation in the presence of electromagnetic interference, while maintaining its inherent performance from the effects of radiated or conducted unwanted electromagnetic waves. It is the ability to act.
- a semiconductor package including an antenna for handling a signal such as a network module, is required to have various electromagnetic shielding or radiating structures in order to not only miniaturize, but also to realize excellent electromagnetic interference (EMI) or electromagnetic wave immunity (EMS) characteristics.
- EMI electromagnetic interference
- EMS electromagnetic wave immunity
- a semiconductor chip is attached to the PCB substrate having the antenna pattern embedded therein using an adhesive and electrically connected to the PCB substrate through wire bonding.
- Such a conventional package structure may receive electromagnetic interference from an external device or the like for signal transmission of the antenna, and it is difficult to expect a high transmission speed due to a low signal concentration of the antenna.
- the final package thickness due to the wire bonding and PCB substrate is not only thickened, but also has the disadvantage that the electrical performance is reduced as the loop length of the wire is increased.
- the present invention is to provide a fan-out package by inserting the EMS structure to optimize the radiation angle of the antenna module to improve the transmission speed and distance, and to embed the EMS antenna module in a semiconductor package to protect from oxidation and damage.
- an EMS antenna module including an upper surface on which an antenna pattern is formed and a lower surface facing the upper surface; A first encapsulant provided on an upper surface of the substrate; And a radiation angle adjusting unit positioned to surround the substrate and the first encapsulation material and adjusting a signal radiation angle of the antenna pattern, wherein the radiation angle adjusting unit may be spaced apart from the antenna pattern.
- the substrate may include via holes penetrating through upper and lower surfaces of the substrate, and the antenna pattern may be electrically connected through the via holes.
- the via hole may include a connection extension part that extends along the lower surface of the substrate from the bottom of the via hole.
- the upper surface of the substrate may be provided with a protective layer covering the antenna pattern
- the lower surface of the substrate may be provided with a protective layer covering the connection extension.
- the upper surface of the radiation angle control unit may be coplanar with the upper surface of the first encapsulant.
- the bottom surface of the radiation angle control unit may be coplanar with the bottom surface of the substrate.
- the radiation angle control unit may be provided with an inner surface inclined so that the signal radiation angle of the antenna pattern is small.
- a method of manufacturing an EMS antenna module includes arranging a substrate having an antenna pattern on a first carrier, sealing the substrate with a first encapsulant, and surrounding and spaced apart from the antenna pattern. And forming recesses recessed from the upper surface of the first encapsulant, filling the recesses with a conductive member, cutting the conductive member and the substrate into separate modules.
- the upper surface of the first encapsulant may be ground before removing the first carrier.
- first tape may be attached to a surface from which the first carrier is removed before the groove is formed, and the first tape may be removed after the groove is formed.
- a second tape may be attached to the lower surface of the substrate.
- the semiconductor package including the EMS antenna module according to an embodiment of the present invention for solving the above problem is, a substrate having an antenna pattern formed on the upper surface and connected to the antenna pattern, provided on the substrate
- An EMS antenna module including a first encapsulation material and a radiation angle adjusting unit positioned to surround the substrate and the first encapsulation material to adjust a signal radiation angle of the antenna pattern;
- Semiconductor chips A second encapsulant molding the EMS antenna module and the semiconductor chip to be integrated;
- a wiring unit provided below the EMS antenna module and the semiconductor chip and electrically connected to the EMS antenna module and the semiconductor chip; And an external connection terminal electrically connected to the wiring unit.
- the wiring unit may include a first insulating layer exposing the signal pad of the semiconductor chip and a via hole of the EMS antenna module, a redistribution layer electrically connected to the signal pad and the via hole, and a second insulating layer. It may include an insulating layer and a bump metal layer electrically connected to the redistribution layer.
- the second encapsulation material may be the same material as the first encapsulation material.
- the radiation angle control unit may extend below the substrate and be connected to the wiring unit.
- the radiation angle control unit may be provided with an inner surface inclined so that the signal radiation angle of the antenna pattern is small.
- EMS antenna module and a semiconductor package including the same can improve the transmission speed of the antenna signal by adjusting the optimal radiation angle.
- an EMS antenna module rather than a wire bonded PCB board with built-in antennas, can reduce overall package thickness and improve electrical signaling rates.
- an EMS antenna module is built into the package to protect it from oxidation and damage.
- FIG. 1 is a cross-sectional view illustrating an EMS antenna module according to an embodiment of the present invention.
- FIG. 2 to 9 are cross-sectional views illustrating a method of manufacturing the EMS antenna module of FIG. 1.
- FIG. 10 is a cross-sectional view illustrating a wire bonded semiconductor package in which a conventional antenna is incorporated.
- FIG. 11 is a cross-sectional view for describing a semiconductor package including the EMS antenna module of FIG. 1.
- 12 to 18 are cross-sectional views illustrating a method of manufacturing the semiconductor package of FIG. 11.
- 19 is a cross-sectional view illustrating a semiconductor package according to an embodiment of the present invention.
- 20 is a cross-sectional view illustrating a semiconductor package according to an embodiment of the present invention.
- FIG. 1 is a cross-sectional view illustrating an EMS antenna module 100 according to an embodiment of the present invention.
- an EMS antenna module 100 includes a substrate 110 on which an antenna pattern 113 is formed, a first encapsulant 120, and a radiation angle adjusting unit 130. do.
- the substrate 110 may be a via frame including a via hole 114 that vertically penetrates the substrate 110.
- the substrate 110 may be a printed circuit board (PCB) on which the antenna pattern 113 is formed, or may be an insulation frame.
- the insulating frame may comprise an insulating material. For example, it may include silicon, glass, ceramic, plastic, or polymer.
- An antenna pattern 113 may be provided on the upper surface 111 of the substrate 110.
- the antenna pattern 113 may extend along the upper surface 111 of the substrate 110 to form a pattern.
- the antenna pattern 113 may be a conductive material, for example, may include a metal, and may include copper (Cu), aluminum (Al), silver (Ag), or an alloy thereof.
- the antenna pattern 113 may be formed using various methods such as deposition and plating.
- the antenna pattern 113 may be formed on the upper surface 111 of the substrate 110 by a laser direct structuring (LDS) method.
- LDS method refers to forming a metal pattern through a plating process after performing a pattern processing using a laser on the surface of the thermoplastic resin formed by injection or the like.
- the resin surface processed through laser processing may have a rough surface, so that the adhesion of the plated metal may increase due to the anchoring effect.
- the antenna pattern 113 may be formed in various ways in addition to the above method.
- the via hole 114 may be formed to penetrate the upper surface 111 of the substrate 110 on which the antenna pattern 113 is formed and the lower surface 112 of the substrate 110.
- the via hole 114 may be filled with a conductive material, and the conductive material may include a metal, and may include, for example, copper (Cu), aluminum (Al), silver (Ag), or an alloy thereof. .
- the conductive material and the antenna pattern 113 filled in the via hole 114 may be the same conductive material and may be connected to one end of the antenna pattern 113. Therefore, the antenna pattern 113 may be connected to the lower surface 112 of the substrate through the via hole 114.
- connection extension 115 extending from the lower surface 112 of the substrate 110 along the lower surface 112 of the conductive material filled in the via hole 114 may be formed.
- the connection extension part 115 may be provided to have an area larger than that of the via hole 114, thereby improving connection reliability with the wiring part of the package in which the EMS antenna module 100 is mounted.
- the antenna pattern 113 and the connection extension 115 may be integrally formed with the via hole 114.
- the connection extension 115 may have a pad shape attached to one end of the via hole 114.
- the substrate 110 may further include a protective layer 116 on the upper surface 111 and the lower surface 112.
- the protective layer 116 is formed to cover the upper surface 111 of the substrate 110 on which the antenna pattern 113 is formed and the lower surface 112 on which the connection extension 115 is formed, thereby forming the antenna pattern 113 and the connection. It may serve to protect the extension 115.
- the protective layer 116 may be a solder resist.
- Solder resist is a functional coating material to be applied to a printed circuit board, masking and protecting the surface circuit of the substrate, it is possible to prevent solder bridge during soldering (solder bridge).
- the solder resist may be formed by a photo process such as PSR (Photo Solder Resist), LPI (Liquid Photo Imaging), or an Infra Red (IR) process.
- the first encapsulant 120 may be formed on the upper surface 111 of the substrate 110.
- the first encapsulant 120 may include an insulating material, and may include, for example, an epoxy molding compound (EMC), an encapsulant, a prepreg (PPG), or a polyimide (PI). have.
- EMC epoxy molding compound
- PPG prepreg
- PI polyimide
- the first encapsulation member 120 may cover the upper portion of the substrate 110 to protect the antenna pattern 113 formed on the upper surface 111 from external impact.
- the radiation angle controller 130 may surround the substrate 110 and the first encapsulant 120 and be spaced apart from each other without being connected to the antenna pattern 113.
- the radiation angle adjusting unit 130 is formed on both sides of the EMS antenna module 100 to be spaced apart from the antenna pattern 113 to adjust the signal radiation angle (A) of the antenna It can be located to.
- the radial angle adjustment unit 130 may be a rectangular shape or a triangular shape in the vertical direction. Although illustrated in the drawings a rectangular shape, in addition to the above formation may be provided in a variety of shapes, of course.
- Radiation angle control unit 130 may include a metal, for example, may include copper (Cu), gold (Au), silver (Ag), titanium (Ti) or alloys thereof.
- the radiation angle control unit 130 may be formed by a process such as electroless plating, electrolytic plating, sputtering or printing.
- the upper surface of the radiation angle adjusting unit 130 may be coplanar with the upper surface of the first encapsulant 120. This is to adjust the signal radiation angle A of the antenna pattern 113 by forming the height of the radiation angle adjusting unit 130 by the thickness of the first encapsulant 120.
- the lower surface of the radiation angle adjusting unit 130 may be equal to or lower than the height at which the antenna pattern 113 of the EMS antenna module 100 is formed. That is, the lower surface of the radiation angle adjusting unit 130 is located at the interface between the first encapsulant 120 and the substrate 110 or at a core layer (not shown) of the substrate 110 under the first encapsulant 120. can do. This is to prevent the signal of the antenna pattern 113 from being radiated laterally so as not to affect other elements (not shown) mounted together.
- the bottom surface of the radiation angle controller 130 may be coplanar with the bottom surface of the substrate 110 (see FIG. 19).
- the upper and lower lengths of the radiation angle adjusting unit 130 may be the same as the height of the EMS antenna module 100 to ground to the ground, by absorbing the signal radiated to the side to prevent interference such as crosstalk (crosstalk) Can be.
- the lower surface of the radiation angle control unit 130 may be connected to the wiring unit.
- the radiation angle adjusting unit 130 may be provided to be inclined so that the signal radiation angle A of the antenna pattern 113 is reduced (see FIG. 20).
- the radial angle control unit 130 may have an inverted trapezoidal shape having an upper side longer than a lower side, or an inverted triangle shape having a lower side up and a vertex down. 20 illustrates an inverted trapezoidal shape, but is not limited thereto. Any shape may be included in the technical spirit of the present invention as long as the signal radiation angle A of the antenna can be reduced. By reducing the signal emission angle A of the antenna, the signal can be concentrated, and thus the signal transmission speed can be improved.
- FIG. 2 to 9 are cross-sectional views for explaining a method of manufacturing the EMS antenna module 100 of FIG. 1 according to an embodiment of the present invention according to the process steps.
- FIG 2 illustrates a process of attaching the substrate 110 to the first carrier 140.
- a strip substrate 110a in which a unit substrate 110 including an antenna pattern 113 connected to a via hole 114 is continuously provided is prepared, and the strip substrate 110a is formed as a first substrate. It is disposed on the carrier 140.
- the strip substrate 110a may be fixed to the first carrier 140 by the first adhesive layer 141. In this case, the strip substrate 110a is disposed on the first carrier 140 so that the antenna pattern 113 faces upward.
- the drawing shows a strip substrate 110a to which two unit substrates 110 are connected
- a plurality of EMS antenna modules are processed in one process, including using a strip substrate to which three or more unit substrates 110 are connected. 100 can be manufactured.
- the first carrier 140 may support the strip substrate 110a and may be formed of a material having considerable rigidity and low thermal deformation.
- the first carrier 140 may be of a solid type and may include silicon, glass, ceramic, plastic, or polymer, for example For example, a molded article or a polyimide tape may be used.
- the first adhesive layer 141 may use a double-sided adhesive film.
- the first adhesive layer 141 may be attached to and fixed on the first carrier 140 on one surface thereof, and the strip substrate 110a may be attached to the other surface.
- FIG. 3 illustrates a process of molding the first encapsulant 120.
- the first encapsulant 120 may be injected into a fluid state between the first carrier 140 and an upper mold (not shown) and provided on the first carrier 140.
- the mold may be pressed and hardened in a high temperature state.
- the first encapsulation material 120 is injected to cover the upper side of the strip substrate 110a and surround the side surface, and is cured and integrated with time.
- first encapsulant 120 has been described as being injected in a fluid state as a method of sealing the first encapsulant 120, a method such as being coated or printed may be used. In addition, various techniques conventionally used in the art may be used as a molding method of the encapsulant.
- the first encapsulant 120 when the first encapsulant 120 is thickly molded on the strip substrate 110a, a process of adjusting the thickness of the first encapsulant 120 may be added by grinding it. Since the thickness of the first encapsulant 120 is related to the height of the above-described radiation angle adjusting unit 130, it may be formed at an appropriate height according to the design of the signal radiation angle A. FIG.
- FIG 4 illustrates a process of removing the first carrier 140 and attaching the first tape 150a.
- the first carrier 140 supporting the strip substrate 110a may be removed.
- the first tape 150a may be attached to a surface from which the first carrier 140 is removed.
- the first tape 150a adheres to the frame in order to prevent the wafer, the chip, and the like from falling from the equipment during the sawing process.
- the first tape 150a may be used to attach the strip substrate 110a integrated with the first encapsulant 120 to the sawing equipment in a foil mount process.
- the first tape 150a may be a UV tape.
- the UV tape adheres to the material and firmly fixes the material with high adhesive strength before UV irradiation, and after UV irradiation, the adhesive force decreases due to curing, so that the surface is easily peeled off without contamination or damage to the surface of the material.
- the first tape 150a may be used as long as the tape can fix the strip substrate 110a.
- it may be a double-sided adhesive film.
- a recess 160 recessed from an upper surface of the first encapsulant 120 integrated with the strip substrate 110a may be formed.
- the recess 160 fixes the strip substrate 110a integrated with the first encapsulant 120 on the first tape 150a and fixes the strip substrate 110a. It can be formed through.
- Half-sawing may be performed using a blade, a laser unit, or an equivalent thereof, and in the case of a blade, materials may be used differently depending on a target. As an example, a diamond blade may be used.
- the recess 160 may surround a region where the antenna pattern 113 is provided and be spaced apart from the antenna pattern 113.
- the recess 160 may surround a region where the antenna pattern 113 is provided, but may be formed to be separated from the boundary of the region.
- the recess 160 may be formed deeper than the height at which the antenna pattern 113 is provided.
- the shape of the radiation angle adjusting unit 130 may be variously designed to adjust the signal radiation angle A of the antenna as described above.
- the shape may also be provided in various ways.
- the upper side may have an inverted trapezoidal shape longer than the lower side, or an inverted triangle shape having the lower side up and the vertex down.
- FIG. 6 shows a process of removing the first tape 150a.
- the first tape 150a remaining on the lower surface of the first strip substrate 110a may be removed to facilitate pick-up of the strip substrate 110a.
- the first tape 150a when the first tape 150a is a UV tape, the first tape 150a may be peeled without contamination or damage by irradiating and curing UV. UV radiation can be performed for this purpose.
- FIG. 7 illustrates a process of filling the recess 160 with the conductive member 161.
- the conductive member 161 is filled according to the shape of the groove 160, and the drawing illustrates the conductive member 161 filled in the rectangular groove 160.
- the conductive member 161 may be filled to form the same plane as the upper surface of the first encapsulant 120. If the upper surface of the filled conductive member 161 and the upper surface of the first encapsulant 120 is not the same plane, it may be further performed by grinding them to form the same plane.
- the conductive member 161 may include a metal.
- a metal For example, copper (Cu), gold (Au), silver (Ag), titanium (Ti) or an alloy thereof may be included.
- the conductive member 161 may be formed by a method such as electroless plating, electrolytic plating, sputtering or printing.
- the strip substrate 110a needs to be fixed in order to cut into each unit EMS antenna module 100.
- the second tape 150b may be attached to the lower surface of the strip substrate 110a.
- the second tape 150b may be made of the same material as the first tape 150a. That is, the second tape 150b may be a UV tape.
- the UV tape adheres to the material and firmly fixes the material with high adhesive strength before UV irradiation, and after UV irradiation, the adhesive force decreases due to curing, so that the surface is easily peeled off without contamination or damage to the surface of the material.
- the second tape 150b may be made of a different material from that of the first tape 150a, and any tape may be used as long as the tape may fix the strip substrate 110a during the sawing process.
- it may be a double-sided adhesive film.
- the strip substrate 110a fixed by attaching and fixing the second tape 150b may be cut and separated into each unit EMS antenna module 100.
- the conductive member 161 filled in the groove 160 is cut, the conductive member 161 is positioned to surround the antenna pattern 113 of the unit EMS antenna module 100 to adjust the signal radiation angle (A). )
- the sawing process may cut from the upper surface of the conductive member 161 to the lower surface of the strip substrate 110a to which the second tape 150b is attached in a direction perpendicular to the upper surface of the conductive member 161. Cutting may be performed using a diamond blade, laser unit or equivalent thereof.
- a strip substrate 110a in which two unit substrates 110 are continuously provided is illustrated. 8 and 9, the conductive member 161 positioned between the two unit substrates 110 may be cut once or twice or more. Two or more cuttings may be required to form a narrow width of the radial angle adjusting unit 130 formed by cutting the conductive member 161. On the other hand, the conductive member 161 located at both ends of the strip substrate 110a may be sufficient for one cutting.
- the first encapsulant 120 sealing the side surface of the strip substrate 110a may be cut to be removed, or the first encapsulant 120 may be cut to remain after cutting.
- the unit EMS antenna module 100 cut to remove the first encapsulant 120 is illustrated.
- the semiconductor package 1000 including the EMS antenna module 100 and a manufacturing method thereof will be described.
- FIG. 10 is a cross-sectional view illustrating a wire bonding fan-out semiconductor package in which a conventional antenna is incorporated.
- a semiconductor chip 201 is attached to a printed circuit board 401 having an antenna pattern 101 embedded therein, and is electrically connected to the printed circuit board 401 through wire 102 bonding.
- a conventional package structure may receive electromagnetic interference for signal transmission of an antenna from an external device, etc., and it is difficult to expect a fast transmission speed because signal concentration cannot be adjusted because the signal radiation angle of the antenna cannot be adjusted.
- the final package thickness due to the wire 102 bonding and the printed circuit board 401 is not only thickened, but also has the disadvantage that the electrical performance is reduced as the loop length of the wire 102 is increased.
- FIG. 11 is a cross-sectional view illustrating a semiconductor package 1000 according to an embodiment of the present invention.
- the semiconductor package 1000 may include an EMS antenna module 100, a semiconductor chip 200, a second encapsulant 300, a wiring unit 400, and an external connection terminal. 500 may be included.
- the EMS antenna module 100 may include a via hole 114 having an antenna pattern 113 formed on an upper surface 111 and penetrating through the upper surface 111 and the lower surface 112 to be connected to the antenna pattern 113.
- a substrate 110 including the substrate 110, a first encapsulant 120 provided on the substrate 110, and the antenna pattern 113 surrounded by the substrate 110 and the first encapsulant 120. It may include a radial angle control unit 130 spaced apart from).
- the connection extension 115 extending along the lower surface 112 of the substrate 110 and connected to the via hole 114 is provided on the upper surface 111 and the lower surface 112 of the substrate 110.
- the protective layer 116 may be further included.
- the antenna pattern 113 of the EMS antenna module 100 is connected to the via hole 114 and may be electrically connected to the signal pad 210 of the semiconductor chip 200 through the wiring unit 400. Accordingly, the antenna pattern 113 may receive and transmit a signal from the semiconductor chip 200.
- the first encapsulant 120 provided on the substrate 110 and the second encapsulant 300 for sealing the semiconductor package 1000 may transmit a signal, and are controlled by the radiation angle controller 130. By adjusting the signal radiation angle A (see FIG. 1), it is possible to concentrate the signal and improve the transmission speed.
- the radiation angle adjusting unit 130 of the EMS antenna module 100 adjusts the signal radiation angle A, and simultaneously absorbs the signal radiated to the side to the semiconductor chip 200 or another device (not shown). It is possible to prevent the occurrence of electromagnetic interference (EMI).
- EMI electromagnetic interference
- electromagnetic wave immunity may be provided to shield an electromagnetic wave emitted from another device (not shown) and transmit a signal normally.
- the semiconductor chip 200 may be, for example, an integrated circuit (Die or IC).
- the semiconductor chip 200 may be a memory chip or a logic chip.
- the memory chip may include DRAM, SRAM, flash, PRAM, ReRAM, FeRAM, or MRAM.
- the logic chip may be a controller for controlling memory chips.
- the semiconductor chip 200 may have an active surface including an active region in which a circuit is formed, and an inactive surface opposite to the active surface.
- a signal pad 210 may be formed on the active surface for exchanging signals with the outside.
- the signal pad 210 may be integrally formed with the semiconductor chip 200, and the signal pad 210 and the active surface may be provided in the same plane.
- the bumps may be attached to one surface of the semiconductor chip 200 instead of the signal pad 210 integrally formed with the semiconductor chip.
- the bumps may be copper pillar bumps or solder bumps.
- the signal pad 210 is electrically connected to the wiring unit 400.
- the connection of the signal pad 210 and the wiring unit 400 may be based on a bump or a conductive adhesive material.
- it may be solder joint bonding by a molten material of a metal (including lead (Pb) or tin (Sn)).
- the semiconductor chip 200 may be disposed to face the active part on which the signal pad 210 is formed to face downwards. At this time, the active surface of the semiconductor chip 200 and the lower surface of the EMS antenna module 100 may form the same plane.
- the EMS antenna module 100 may be disposed together, and may be electrically connected to the wiring unit 400 through the signal pad 210.
- the second encapsulant 300 may be molded to integrate the EMS antenna module 100 and the semiconductor chip 200.
- the second encapsulant 300 may include an insulator and may include, for example, an epoxy mold compound (EMC) or an encapsulant.
- EMC epoxy mold compound
- the second encapsulant 300 may be hardened in a high temperature environment after being injected in a fluid state. For example, it may include a step of heating and pressurizing the second encapsulant 300 at the same time, and at this time, a gas may be removed from the second encapsulant 300 by adding a vacuum process. As the second encapsulant 300 is cured, the EMS antenna module 100 and the semiconductor chip 200 are integrated to form a structure. After the second encapsulant 300 is sealed, the semiconductor package 1000 may have a rectangular cross section.
- the second encapsulant 300 may be filled between the EMS antenna module 100 and the semiconductor chip 200.
- the second encapsulant 300 may be provided to surround the top and side surfaces of the EMS antenna module 100 and the semiconductor chip 200. Therefore, the EMS antenna module 100 and the semiconductor chip 200 may be surrounded by the second encapsulant 300 and may not be exposed to the outside, and may be protected from external impact.
- the second encapsulant 300 may be made of the same material as the first encapsulant 120 of the EMS antenna module 100.
- the wiring unit 400 is positioned below the EMS antenna module 100 and the semiconductor chip 200 to electrically connect them, and may also electrically connect an external connection terminal 500 to be described later.
- the wiring unit 400 includes insulating layers 410 and 430 and wiring layers 420 and 440.
- the wiring unit 400 may include a first insulating layer 410, a redistribution layer 420, a second insulating layer 430, and a bump metal layer 440.
- the first insulating layer 410 may be disposed under the EMS antenna module 100 and the semiconductor chip 200.
- the redistribution layer 420 may be disposed between the first insulating layer 410 and the second insulating layer 430, and may include the signal pad 210 of the semiconductor chip 200 and the via hole 114 of the EMS antenna module 100. Can be connected.
- the second insulating layer 430 may be disposed between the redistribution layer 420 and the bump metal layer 440.
- the bump metal layer 440 may be connected to the redistribution layer 420.
- the redistribution layer 420 and the bump metal layer 440 may include a conductive material, for example, a metal.
- a conductive material for example, a metal.
- copper (Cu), aluminum (Al) or an alloy thereof may be included.
- the first insulating layer 410 and the second insulating layer 430 may include an organic or inorganic insulating material.
- the first insulating layer 410 and the second insulating layer 430 may include, for example, an organic insulating material such as an epoxy resin, and an inorganic insulating material such as silicon oxide (SiOx) or silicon nitride (SiNx). It may include.
- the wiring unit 400 may be formed by a metallization relocation process (RDL).
- RDL metallization relocation process
- a metal pattern having a fine pattern may be formed on one surface of the semiconductor chip 200 on which the signal pad 210 is formed, that is, the active surface by using a photoresist process and a plating process.
- the first insulating layer 410 and the second insulating layer 430 may be formed of a dielectric coating.
- the wiring unit 400 may rearrange the semiconductor chip 200 to form a circuit. That is, since the semiconductor chip 200 is rearranged by the wiring unit 400, the semiconductor package 1000 may have a fan-out structure. Therefore, the input / output terminals of the semiconductor chip 200 may be miniaturized and the number of input / output terminals may be increased.
- the external connection terminal 500 may be connected to the bump metal layer 440 to electrically connect the semiconductor package 1000 to an external circuit or another semiconductor package (not shown).
- solder ball is illustrated as an example of the external connection terminal 500 in the drawing, it may be a solder bump and may be made of a material other than solder.
- the surface of the external connection terminal 500 may be subjected to surface treatment such as organic coating or metal plating to prevent the surface from being oxidized.
- the organic material may be an organic solder preservation (OSP) coating
- the metal plating may be treated with gold (Au), nickel (Ni), lead (Pb), silver (Ag) plating, or the like.
- 12 to 18 are cross-sectional views illustrating a method of manufacturing the semiconductor package 1000 of FIG. 11 according to an embodiment of the present invention according to process steps.
- FIG. 12 illustrates a process of attaching the EMS antenna module 100 and the semiconductor chip 200 on the second carrier 600.
- the EMS antenna module 100 and the semiconductor chip 200 are disposed on the second carrier 600.
- the EMS antenna module 100 and the semiconductor chip 200 may be fixed to the second carrier 600 by the second adhesive layer 610.
- the EMS antenna module 100 is disposed on the second carrier 600 so that the first encapsulant 120 and the radiation angle adjusting unit 130 face upwards, and the semiconductor chip 200 includes a signal pad ( An active surface (not shown) having the 210 formed thereon is disposed on the second carrier 600 to face downward.
- the EMS antenna module 100 and the semiconductor chip 200 may be disposed to be spaced apart from each other.
- a single semiconductor chip 200 is disposed together with the EMS antenna module 100 in the drawing, alternatively, a plurality of semiconductor chips may be arranged according to a design.
- one semiconductor package 1000 is manufactured on the second carrier 600 in the drawing, in contrast, on the second carrier 600, a plurality of EMS antenna modules 100 and a semiconductor chip are spaced at predetermined intervals.
- the 200 may be attached to simultaneously manufacture a plurality of semiconductor packages 1000 in a single process.
- the second carrier 600 supports the EMS antenna module 100 and the semiconductor chip 200, and may be formed of a material having considerable rigidity and low thermal deformation.
- the second carrier 600 may be a material of a solid type. For example, a material such as a mold molding or a polyimide tape may be used.
- the second adhesive layer 610 may use a double-sided adhesive film, and one surface may be attached and fixed on the second carrier 600, and the EMS antenna module 100 and the semiconductor chip 200 may be attached to the other surface. .
- FIG. 13 illustrates a process of molding the second encapsulant 300.
- the second encapsulant 300 may be injected in a state of fluidity between the third carrier 600 and the upper mold (not shown) and provided on the second carrier 600.
- the mold may be pressed and hardened in a high temperature state.
- the second encapsulant 300 is injected to cover the upper side of the EMS antenna module 100 and the semiconductor chip 200 and surround the side surface, and is cured and integrated with time.
- the second encapsulant 300 is injected in a fluid state as a method of sealing the second encapsulant 300, a method such as being applied or printed may be used.
- various techniques conventionally used in the art may be used as a molding method of the encapsulant.
- the third carrier 700 may be attached to a surface facing the removed surface.
- the upper surface of the sealed second encapsulant 300 may be fixed to the third carrier 700 by the third adhesive layer 710.
- the third carrier 700 may be made of the same material as the second carrier 600, and the third adhesive layer 710 may also be made of the same material as the second adhesive layer 610.
- 15 to 17 illustrate a redistribution process of forming the wiring unit 400 of the semiconductor package 1000 and a process of attaching the external connection terminal 500.
- the first insulating layer 410 may be formed on the substrate.
- the first insulating layer 410 may coat the insulating material and then expose the connection extension 115 and the signal pad 210 through an etching process.
- the redistribution layer 420 is formed on the first insulating layer 410.
- the redistribution layer 420 is connected to the exposed connection extension 115 and the signal pad 210 and connects the EMS antenna module 100 and the semiconductor chip 200.
- the redistribution layer 420 may form a metal pattern through a photoresist process after coating a metal material on the first insulating layer 410.
- the redistribution layer 420 may be coated through a general plating process.
- the semiconductor package 1000 may have a fan-out structure.
- a second insulating layer 430 is formed on the redistribution layer 420, and a bump metal layer 440 connected to the redistribution layer 420 is formed on the second insulating layer 430.
- the second insulating layer 430 may expose a hole having a predetermined interval of the redistribution layer 420 through an etching process after coating an insulating material on the redistribution layer 420.
- the bump metal layer 440 is formed on the second insulating layer 430 and may be connected to the redistribution layer 420 through the exposed hole.
- the bump metal layer 440 may be formed by coating a metal material on the second insulating layer 430 and then performing a photoresist process.
- an external connection terminal 500 is formed on the bump metal layer 440 of the wiring unit 400.
- the external connection terminal 500 may be connected to the bump metal layer 440.
- the external connection terminal 500 may be electrically connected to the wiring unit 400, and may be used as a medium for connecting the semiconductor package 1000 to an external circuit or another semiconductor package (not shown).
- one side of the external connection terminal 500 may be connected to the bump lower metal layer 24, and the other side thereof may be exposed to the outside.
- the third adhesive layer 710 may also be removed at the same time.
- FIG. 19 and 20 are cross-sectional views illustrating another example of a semiconductor package 1000 according to an example embodiment.
- the semiconductor packages 2000 and 3000 according to another exemplary embodiment of the present invention have the same configuration except that the shapes of the semiconductor package 1000 and the radiation angle controllers 130-1 and 130-2 of FIG. 11 are different from each other. Bar overlapping descriptions will be simplified or omitted.
- a semiconductor package 2000 may include an EMS antenna module 100, a semiconductor chip 200, a second encapsulant 300, a wiring unit 400, and an external connection terminal. 500.
- the bottom surface of the radiation angle control unit 130-1 of the EMS antenna module 100 is provided in the same plane as the bottom surface of the substrate 110, and the radiation angle control unit 130-1 is connected to the wiring unit ( 400).
- the upper and lower lengths of the radiation angle adjusting unit 130-1 to be the same as the height of the EMS antenna module 100 to be grounded to the wiring unit 400, the noise emitted to the side can be absorbed to reduce noise. .
- the radiation angle adjusting unit 130-1 grounded to the wiring unit 400 is a strip substrate, not half sawing, in the process of forming the recess 160 during the manufacturing process of the EMS antenna module 100. It can be formed by cutting all to the lower surface of (110a). In this case, the strip substrate 110a integrated with the first encapsulant 120 may be firmly fixed using the first tape 150a.
- the semiconductor package 3000 may include an EMS antenna module 100, a semiconductor chip 200, a second encapsulant 300, a wiring unit 400, and an external connection terminal. 500.
- the radiation angle adjusting unit 130-2 of the EMS antenna module 100 may be inclined.
- the inner surface of the radiation angle adjusting unit 130-2 may be inclined to reduce the signal radiation angle A of the antenna pattern 113, the signal can be concentrated and the signal transmission speed can be improved.
- the radial angle adjusting unit 130-2 may have an inverted trapezoidal shape having an upper side longer than a lower side, or an inverted triangle shape having a lower side up and a vertex down.
- the drawing shows an inverted trapezoidal shape, but is not limited thereto. Any shape may be included in the technical spirit of the present invention as long as the signal radiation angle A of the antenna can be reduced.
- the radial angle adjusting unit 130-2 having the inner side inclined in the process of forming the groove 160 during the manufacturing process of the EMS antenna module 100 includes a groove such as an inverted triangle or an inverted triangle instead of a rectangular shape. It can be formed by forming 160.
- the groove 160 such as an inverted triangle or an inverted triangle shape, is fixed by mounting the strip substrate 110a integrated with the first encapsulant 120 on the first tape 150a and then half sawing. Can be formed.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Computer Networks & Wireless Communication (AREA)
- Variable-Direction Aerials And Aerial Arrays (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
L'invention concerne un module d'antennes EMS et un ensemble semi-conducteur le comprenant. Selon un mode de réalisation de la présente invention, le module d'antennes EMS comprend : un substrat incluant un motif d'antenne et un trou d'interconnexion ; un premier matériau étanche sur la partie supérieure du substrat ; et une unité de réglage d'angle d'émission pour le réglage d'un angle d'émission de signaux d'une antenne. Une vitesse d'émission de signaux peut être améliorée en maintenant un angle optimal d'émission d'un signal d'antenne grâce à l'unité de réglage d'angle d'émission du module d'antennes EMS, et l'ensemble semi-conducteur le comprenant peut fonctionner normalement tout en maintenant une performance unique contre l'interférence électromagnétique.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2016-0162604 | 2016-12-01 | ||
KR1020160162604A KR101870421B1 (ko) | 2016-12-01 | 2016-12-01 | Ems 안테나 모듈 및 그 제조방법과 이를 포함하는 반도체 패키지 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2018101767A1 true WO2018101767A1 (fr) | 2018-06-07 |
Family
ID=62241630
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2017/013910 WO2018101767A1 (fr) | 2016-12-01 | 2017-11-30 | Module d'antennes ems, son procédé de fabrication, et ensemble semi-conducteur le comprenant |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR101870421B1 (fr) |
WO (1) | WO2018101767A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111403356A (zh) * | 2020-04-02 | 2020-07-10 | 杭州晶通科技有限公司 | 一种模块化天线的扇出型封装结构的制备工艺 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007318469A (ja) * | 2006-05-26 | 2007-12-06 | Murata Mfg Co Ltd | アンテナ装置及び高周波モジュール |
JP2008017421A (ja) * | 2006-07-10 | 2008-01-24 | Seiko Epson Corp | 半導体装置 |
JP2009266979A (ja) * | 2008-04-24 | 2009-11-12 | Shinko Electric Ind Co Ltd | 半導体装置 |
JP2013026438A (ja) * | 2011-07-21 | 2013-02-04 | Teramikros Inc | 半導体装置内蔵基板モジュール及びその製造方法 |
KR20160067961A (ko) * | 2013-12-09 | 2016-06-14 | 인텔 코포레이션 | 패키징된 다이용 세라믹 상의 안테나 |
-
2016
- 2016-12-01 KR KR1020160162604A patent/KR101870421B1/ko active IP Right Grant
-
2017
- 2017-11-30 WO PCT/KR2017/013910 patent/WO2018101767A1/fr active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007318469A (ja) * | 2006-05-26 | 2007-12-06 | Murata Mfg Co Ltd | アンテナ装置及び高周波モジュール |
JP2008017421A (ja) * | 2006-07-10 | 2008-01-24 | Seiko Epson Corp | 半導体装置 |
JP2009266979A (ja) * | 2008-04-24 | 2009-11-12 | Shinko Electric Ind Co Ltd | 半導体装置 |
JP2013026438A (ja) * | 2011-07-21 | 2013-02-04 | Teramikros Inc | 半導体装置内蔵基板モジュール及びその製造方法 |
KR20160067961A (ko) * | 2013-12-09 | 2016-06-14 | 인텔 코포레이션 | 패키징된 다이용 세라믹 상의 안테나 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111403356A (zh) * | 2020-04-02 | 2020-07-10 | 杭州晶通科技有限公司 | 一种模块化天线的扇出型封装结构的制备工艺 |
Also Published As
Publication number | Publication date |
---|---|
KR101870421B1 (ko) | 2018-06-26 |
KR20180063403A (ko) | 2018-06-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7977163B1 (en) | Embedded electronic component package fabrication method | |
US20220320010A1 (en) | Semiconductor device and manufacturing method thereof | |
US7981730B2 (en) | Integrated conformal shielding method and process using redistributed chip packaging | |
US8119455B1 (en) | Wafer level package fabrication method | |
US20200126929A1 (en) | Semiconductor device with an electromagnetic interference (emi) shield | |
WO2017176020A1 (fr) | Boîtier de semi-conducteur et son procédé de fabrication | |
US7129572B2 (en) | Submember mounted on a chip of electrical device for electrical connection | |
US20090072357A1 (en) | Integrated shielding process for precision high density module packaging | |
WO2013176426A1 (fr) | Boîtier de semi-conducteur, son procédé de fabrication, et boîtier sur boîtier | |
WO2011136417A1 (fr) | Module de boîtier métallique de type terminal intégré et procédé d'encapsulation d'un terminal intégré pour un module de boîtier métallique | |
KR101858954B1 (ko) | 반도체 패키지 및 이의 제조 방법 | |
CN113130434A (zh) | 封装结构及其制造方法 | |
JP2023522881A (ja) | 放射遮蔽を用いる統合されたシステムインパッケージ | |
US20170280561A1 (en) | Module with external shield and back-spill barrier for protecting contact pads | |
WO2019194517A1 (fr) | Carte de circuit imprimé et bande de carte de circuit imprimé | |
KR20140123695A (ko) | 팬 아웃 반도체 패키지 및 그 제조 방법 | |
KR20170138605A (ko) | 반도체 패키지, 이의 제조 방법 및 시스템 인 패키지 | |
WO2018101767A1 (fr) | Module d'antennes ems, son procédé de fabrication, et ensemble semi-conducteur le comprenant | |
KR101060120B1 (ko) | 칩 스케일 반도체 패키지 및 그 제조 방법 | |
KR19990065532A (ko) | Cob형 반도체 패키지의 제조방법 | |
KR100708045B1 (ko) | 반도체패키지 및 그 제조 방법 | |
US20220393039A1 (en) | Electronic devices and methods of manufacturing electronic devices | |
US20240087970A1 (en) | Semiconductor device and method of manufacturing semiconductor device | |
US20220344231A1 (en) | Flip chip package unit and associated packaging method | |
WO2021251763A1 (fr) | Carte de circuit imprimé |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 17876851 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 17876851 Country of ref document: EP Kind code of ref document: A1 |