WO2018098814A1 - 光纤预制棒的制造设备及其制造方法 - Google Patents

光纤预制棒的制造设备及其制造方法 Download PDF

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Publication number
WO2018098814A1
WO2018098814A1 PCT/CN2016/108397 CN2016108397W WO2018098814A1 WO 2018098814 A1 WO2018098814 A1 WO 2018098814A1 CN 2016108397 W CN2016108397 W CN 2016108397W WO 2018098814 A1 WO2018098814 A1 WO 2018098814A1
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Prior art keywords
temperature
deposition
preset
diameter
burner
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PCT/CN2016/108397
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English (en)
French (fr)
Inventor
钱宜刚
沈一春
薛济萍
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中天科技精密材料有限公司
江苏中天科技股份有限公司
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Priority to PCT/CN2016/108397 priority Critical patent/WO2018098814A1/zh
Priority to KR1020197006408A priority patent/KR102196000B1/ko
Publication of WO2018098814A1 publication Critical patent/WO2018098814A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01—Manufacture of glass fibres or filaments
    • C03B37/012—Manufacture of preforms for drawing fibres or filaments
    • C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
    • C03B37/018—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD] by glass deposition on a glass substrate, e.g. by inside-, modified-, plasma-, or plasma modified- chemical vapour deposition [ICVD, MCVD, PCVD, PMCVD], i.e. by thin layer coating on the inside or outside of a glass tube or on a glass rod
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01—Manufacture of glass fibres or filaments
    • C03B37/012—Manufacture of preforms for drawing fibres or filaments
    • C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
    • C03B37/018—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD] by glass deposition on a glass substrate, e.g. by inside-, modified-, plasma-, or plasma modified- chemical vapour deposition [ICVD, MCVD, PCVD, PMCVD], i.e. by thin layer coating on the inside or outside of a glass tube or on a glass rod
    • C03B37/01876—Means for heating tubes or rods during or immediately prior to deposition, e.g. electric resistance heaters
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01—Manufacture of glass fibres or filaments
    • C03B37/012—Manufacture of preforms for drawing fibres or filaments
    • C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
    • C03B37/018—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD] by glass deposition on a glass substrate, e.g. by inside-, modified-, plasma-, or plasma modified- chemical vapour deposition [ICVD, MCVD, PCVD, PMCVD], i.e. by thin layer coating on the inside or outside of a glass tube or on a glass rod
    • C03B37/01884—Means for supporting, rotating and translating tubes or rods being formed, e.g. lathes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/48—Thermography; Techniques using wholly visual means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00—Technologies relating to the processing of minerals
    • Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57—Improving the yield, e-g- reduction of reject rates

Definitions

  • the present invention relates to the field of optical fiber preform manufacturing technology, and in particular to an optical fiber preform manufacturing apparatus and a manufacturing method thereof.
  • Optical fiber preform manufacturing is divided into mandrel manufacturing and outer cladding manufacturing, that is, the mandrel (including the core layer and the optical cladding) is first manufactured, and then the cladding is deposited outside the mandrel to prepare an optical fiber preform.
  • the manufacturing methods of optical fiber preform rods mainly include axial vapor deposition (VAD), modified chemical vapor deposition (MCVD), plasma chemical vapor deposition (PCVD) and extra-tube vapor deposition (OVD), and outer cladding.
  • VAD axial vapor deposition
  • MCVD modified chemical vapor deposition
  • PCVD plasma chemical vapor deposition
  • OTD extra-tube vapor deposition
  • outer cladding outer cladding
  • An apparatus for manufacturing an optical fiber preform comprising: a deposition target rod, a first burner, and a first central control device, wherein the deposition target rod is used for attaching a powder to form a core rod during deposition, the core rod comprising a core layer and An optical cladding coated on the core layer, the burner port of the first burner is disposed toward the deposition target rod, the first burner is connected to the first central control device, and the manufacturing apparatus further includes a temperature measuring unit connected to the first central control device, the temperature measuring unit is configured to monitor a deposition temperature of the core layer and feed back the detected deposition temperature to the first central control device every preset time And the first central control device controls the H 2 flow rate of the first torch according to the detected deposition temperature.
  • the first central control device pre-stores a preset target temperature and a preset temperature deviation, and the detected deposition temperature is a detection deposition temperature, and the detection deposition temperature constitutes a first group, the first The group includes t1, t2, t3, ... t(i-1), ti according to the detection sequence, and the first central control device takes an average value of the detected deposition temperatures for N consecutive times, and the average value constitutes the second group.
  • the group, the second group according to the average order includes t1', t2', t3'...t(i-1)', ti', and t(i-1)' is the pre-value of ti'. Comparing ti' with the preset target temperature, when the deviation of ti' from the preset target temperature is not greater than the preset temperature deviation, the H 2 flow rate in the first burner remains unchanged .
  • ti' is compared with t(i-1)', If ti 'is greater than t (i-1)', the first torch is adjusted to reduce the flow rate of H 2; if ti 'less than t (i-1)', the H 2 flow rate remains unchanged.
  • ti' is compared with t(i-1)', If ti' is less than t(i-1)', then the adjustment increases the H 2 flow in the first burner.
  • the first central control device pre-stores a preset target temperature and a preset temperature deviation
  • the detected deposition temperature is a detection deposition temperature
  • the detection deposition temperature constitutes a first group, which includes t1. T2, t3, ... t(i-1), ti, averaging all or part of the detected deposition temperatures of the first group, when the deviation between the average value and the preset temperature target is not greater than Presetting the temperature deviation, the H 2 flow rate of the first torch remains unchanged; when the deviation between the average value and the preset temperature target is greater than the preset temperature deviation, the adjustment increases the first H 2 flow of the blowtorch.
  • the preset target temperature is 1050 ° C
  • the preset temperature deviation is 2 ° C.
  • the first central control device adjusts the flow rate of the H 2 of the first burner to be 0.1 L/min.
  • the temperature measuring unit is an infrared thermal imager.
  • a method of manufacturing an optical fiber preform comprising a core rod and an outer cladding coated on an outer side surface of the core rod, the core rod comprising a core layer and an optical package coated on an outer side surface of the core layer a layer, the manufacturing method comprising monitoring a deposition temperature of the core layer, and controlling a H 2 flow rate in the first burner that provides the core growth material according to the deposition temperature of the monitoring core layer.
  • the deposition temperature of the core layer is detected every predetermined time interval, and the detected deposition temperature is a detection deposition temperature, and the detection deposition temperature is a first group, and the first group includes the detection sequence.
  • T1, t2, t3, ... t(i-1), ti taking the average of the detected deposition temperatures for N consecutive times, the average value constitutes the second group, and the second group is in the average order Including t1', t2', t3'...t(i-1)', ti', let t(i-1)' be the pre-value of ti', compare ti' with the preset target temperature, when When the deviation of ti' from the preset target temperature is not greater than the preset temperature deviation, the H 2 flow rate in the first torch remains unchanged, when ti' is between the preset target temperature When the deviation is greater than the preset temperature deviation, comparing ti' with t(i-1)', and adjusting the first burner according to the difference between the t
  • the optical fiber preform manufacturing apparatus and the manufacturing method thereof provide real-time control of adjusting the flow rate of H 2 according to the detection deposition temperature, ensuring the stability of the surface temperature of the mandrel, and thereby improving the refractive index of the mandrel. Stability also improves the product yield of optical fiber preforms.
  • Figure 1 is a schematic illustration of an optical fiber preform manufacturing system in accordance with a preferred embodiment of the present invention.
  • Figure 2 is a schematic view of the end face of the preform.
  • Figure 3 is a schematic view of a first manufacturing apparatus.
  • Figure 4 is a comparison of the original process and the single bar refractive index axial test of the present embodiment.
  • Figure 5 is a schematic illustration of a mandrel.
  • Figure 6 is a schematic view of a second manufacturing apparatus.
  • Optical fiber preform manufacturing system 300 Preform 400 Mandrel 401 Outsourcing layer 403 Core layer 405 Optical cladding 407 Axis 409, 101 First manufacturing equipment 100 Second manufacturing equipment 200 Deposition chamber 11 Lifting device 12 Rotating device 13 Deposition target 14,207 First blowtorch 15 Second blowtorch 16 Gas supply device 17 Temperature measuring unit 18 Measuring unit 19 First central control unit 20 Ranging unit 201 Deposition blowtorch 203 Second central control device 205
  • the present invention provides an optical fiber preform manufacturing system 300 for fabricating a preform 400.
  • the preform 400 includes a core rod 401 and an outer cladding 403 coated on the core rod 401.
  • the optical fiber preform manufacturing system 300 includes a first manufacturing apparatus 100 and a second manufacturing apparatus 200.
  • the first manufacturing apparatus 100 is for depositing and manufacturing a mandrel 401 including a starting rod made of a glass material for providing a growth base and a core layer formed by depositing a powder at an end of the starting rod 405 and an optical cladding 407 coated on the core layer 405.
  • the core layer 405 has a higher refractive index than the optical cladding 407.
  • the second manufacturing apparatus 200 is used to deposit the outer cladding 403.
  • the first manufacturing apparatus 100 prepares the mandrel 401 by axial vapor deposition (VAD); the second manufacturing apparatus 200 deposits on the mandrel 401 by an out-of-pipe vapor deposition method (OVD) to form an outer cladding 403.
  • VAD axial vapor deposition
  • ODD out-of-pipe vapor deposition method
  • the first manufacturing apparatus 100 includes a deposition chamber 11 , a lifting device 12 , a rotating device 13 , a deposition target rod 14 , a first torch 15 , a second torch 16 , a gas supply device 17 , and a temperature measuring unit 18 .
  • the caliper unit 19 and the first central control unit 20 are included in the first manufacturing apparatus 100 .
  • the lifting device 12 is disposed above the deposition chamber 11, and the rotating device 13 is mounted on the lifting device 12.
  • the deposition target rod 14 is mounted on the rotating device 13 and housed in the deposition chamber 11.
  • the rotating device 13 is provided with an axis 101.
  • the lifting device 12 is used to drive the deposition target rod 14 to ascend or descend along the axis 101, and the rotating device 13 is used to drive the deposition target rod 14 to rotate about the axis 101.
  • the deposition target rod 40 is used to adhere the powder to form the core rod 401 during deposition.
  • the first torch 15 and the second torch 16 are located on the lower side of the deposition chamber 11.
  • the burner port (not shown) of the first burner 15 and the burner port (not shown) of the second burner 16 are located inside the deposition chamber 11 and are disposed toward the deposition target 14.
  • the core layer 405 is formed by depositing powder at the end of the mandrel 401 with the first torch 15 to cause the core layer 405 to grow downward from the end of the mandrel 401.
  • the first torch 15 is used to provide a core growth material.
  • the second cladding lamp 16 is used to deposit a powder on the end of the mandrel 401 to form an optical cladding 407, so that the optical cladding 407 is deposited on the core layer 405 and grown downward from the end of the mandrel 401.
  • the second torch 16 is used to provide an optical cladding growth material.
  • the gas supply means 17 is connected to the first burner 50 and the second burner 60 for supplying the first burner 50 and the second burner 60 with a gas such as SiCl 4 , GeCl 4 or the like, and a fuel such as a mixture of hydrogen and oxygen.
  • the gas supply device 17 includes a plurality of gas supply portions (not shown).
  • the plurality of gas supply units include a SiCl 4 supply unit, a GeCl 4 supply unit, an Ar supply unit, an O 2 supply unit, an H 2 supply unit, and the like, and the plurality of gas supply units respectively pass through the pipeline and the first A burner 50 and a second burner 60 are connected.
  • a gas control unit (not shown) is provided between each gas supply unit and the corresponding burner for controlling the gas flow at different stages.
  • a plurality of gas control units are communicatively coupled to the first central control unit 20.
  • the flow rate of SiCl 4 can be adjusted between 0.1g/min and 20g/min. At high temperature, the flame is hydrolyzed to form SiO 2 , which is used to form the cladding and core layer of the preform; the flow rate of GeCl 4 can be from 0.01g/min to 1.0. Adjusted between g/min, the flame is hydrolyzed to form GeO 2 at high temperature, and is doped in the core layer to increase the refractive index of the core layer.
  • the surface of the pipe for transporting SiCl 4 and GeCl 4 requires a heating belt and the temperature is controlled at 100 °C.
  • the H 2 flow rate can be adjusted from 0.1 L/min to 30 L/min; the O 2 flow rate can be adjusted from 0.1 L/min to 50 L/min, wherein H 2 acts as a combustion, O 2 serves as a combustion aid, and, in addition, H 2 is completely reacted, and it is necessary to set the O 2 flow rate to be surplus when the flow rate is set.
  • Ar flow can be adjusted from 0.1 L/min to 10 L/min.
  • Ar acts as a carrier gas to carry the raw material gas; and secondly, separates H 2 and O 2 to prevent mixing and reaction in the torch.
  • the temperature measuring unit 18 is located below the deposition chamber 11 and is spaced apart from the first burner 15 and the second burner 16.
  • the temperature measuring unit 18 is for monitoring the deposition temperature of the core layer 405 at the end of the mandrel 401, and feeds back the detected deposition temperature to the first central control device 20 every predetermined time.
  • the deposition temperature detected by the temperature measuring unit 18 is referred to as a detection deposition temperature.
  • the temperature measuring unit 18 is an infrared thermal imager.
  • the first central control device 20 pre-stores a preset target temperature, a preset temperature deviation, and a preset adjustment flow rate.
  • the first central control device 20 performs a calculation process on the detected deposition temperature and the preset target temperature, and controls the H 2 supply unit to perform the first and second blowers 15 and 16 according to the processing result of the first central control device 20 . Perform gas supply.
  • the detected deposition temperature is a detection deposition temperature
  • the detection deposition temperature constitutes a first group
  • the first group includes t1, t2, t3, ... t(i-1), ti according to the detection sequence.
  • the first central control device 20 takes an average of the detected deposition temperatures for N consecutive times, the average value constitutes a second group, and the second group includes t1', t2', and t3 in an average order.
  • the temperature measuring unit 18 detects the deposition temperature of the core layer 405 of the mandrel 401 at a time interval of 10 seconds, which are sequentially recorded as t1, t2, t3, ... t(i-1), ti.
  • the detecting deposition temperature constitutes a first group, which includes t1, t2, t3, ... t(i-1), ti according to the detection order.
  • the temperature measuring unit 18 feeds back the detected deposition temperature to the first central control unit 20.
  • the first central control unit 20 takes the detection deposition temperature five times in succession and calculates an average value. For example, the average value of t1 to t5 is recorded as t1', the average value of t2 to t6 is recorded as t2', and so on.
  • the average constitutes a second group.
  • the second group includes t1', t2', t3'... t(i-1)', ti'. Let t(i-1)' be the previous value of ti', for example, t2' is the previous value of t1'.
  • Each average is compared with 1050 ° C and the previous value (such as t2 'compared with 1050 ° C and t1 '; t3 ' compared with 1050 ° C and t2 ' ...), such as an average deviation from the 1050 ° C If the average value is greater than 2 ° C, the H 2 flow rate remains unchanged; if the average value is greater than 2 ° C above the 1050 ° C, compared with the previous value, taking t2 ' as an example, if t2 ' is greater than t1 ', the H 2 flow rate is decreased.
  • the H 2 flow rate in the burner can be controlled according to the detection deposition temperature without taking the average value.
  • the H 2 flow rate is increased by 0.1 L/min without being compared with the previous value.
  • N detection deposition temperatures are not limited to a continuous detection sequence, which may also be randomly selected N detection deposition temperatures.
  • the temperature measuring unit 18 is not limited to detect the deposition temperature once every 10S interval, and it can also detect the acquisition at other times.
  • the preset target temperature, the preset temperature deviation, and the preset adjustment flow rate can be set according to the actual deposition process of manufacturing the preform.
  • the central control device 20 calculates a preset adjustment flow control H 2 to adjust the flow rate according to the detected deposition temperature and the processing result.
  • the temperature measuring unit 18 is not limited to an infrared thermal imager, which may also be other temperature sensors.
  • the detection deposition temperature constitutes a first group, which includes t1, t2, t3, ... t(i-1), ti, and averages all detected deposition temperatures of the first group. If the deviation between the average value and the preset temperature target is not greater than the preset temperature deviation, the H 2 flow rate of the first torch 15 remains unchanged; when the deviation between the average value and the preset temperature target deviation greater than a preset temperature, H 2 is adjusted to increase the flow rate, wherein each large 1 °C, the H 2 flow rate is adjusted first torch 15 is increased 0.1L / min, for example, large 1 °C, adjusting the first burner 15 The flow rate of H 2 is 0.1 L/min, and when it is 2 ° C, the flow rate of H 2 of the first burner 15 is adjusted to be 0.2 L/min.
  • gas supply means 17 may be omitted and the first manufacturing apparatus 100 is connected to an external gas supply means.
  • the lifting device 12, the rotating device 13, and the deposition chamber 11 can be omitted.
  • the first central control device 20 controls the H 2 in real time according to the detected deposition temperature.
  • the flow rate ensures the stability of the surface temperature of the mandrel 401, thereby improving the stability of the refractive index of the mandrel 405.
  • the gas flow rate is adjusted in real time, and the deposition of the mandrel 401 is accurately controlled, which can effectively prevent the core rod from cracking due to a large density gradient, thereby improving product quality and yield.
  • the caliper unit 19 includes a first caliper unit 191 and a second caliper unit 193.
  • the first caliper unit 191 is located below the side of the deposition chamber 11, adjacent to the temperature measuring unit 18 and disposed away from the first burner 15 for measuring the diameter of the end core 405 of the mandrel 401.
  • the second caliper unit 193 is located below the side of the deposition chamber 11 and is disposed adjacent to the second torch 16 for measuring the diameter of the optical cladding 407 at the end of the mandrel 401.
  • the first caliper unit 191 and the second caliper unit 193 are CCD cameras.
  • the diameter of the core layer detected by the first caliper unit 191 is the diameter of the detection core layer
  • the diameter of the optical cladding layer detected by the second caliper unit 193 is the diameter of the detection optical cladding.
  • the first caliper unit 191 detects the end core diameter every interval of the first predetermined caliper time and feeds back the detected core layer diameter to the first central control device 20, and the second caliper unit 193 is spaced apart by the second
  • the optical cladding is detected by a preset caliper time and the detected optical cladding diameter is fed back to the first central control device 20.
  • the diameter of the core layer is d, and the diameter of the optical cladding is D.
  • the caliper unit 191 detects the diameter of the end core layer every 1 minute.
  • the first central control device 20 pre-stores the core layer diameter target.
  • the predetermined core layer diameter target is a predetermined core layer diameter range, and the predetermined core layer diameter ranges from 58.3 to 58.7 mm.
  • the flow rate of SiCl 4 of the first burner 15 is constant; if the diameter of the detection core layer is smaller than the minimum threshold of the predetermined core diameter range, 58.3 Mm, the first central control device 20 controls the flow rate of the SiCl 4 of the first burner 15 to be increased by 0.05 g/min, and if the diameter of the detection core layer is greater than the maximum threshold of the predetermined core diameter range of 58.7 mm, the first A central control unit 20 controls the flow rate of the SiCl 4 of the first burner 15 to be lowered by 0.05 g/min.
  • the end point of the preform 400 adjacent to the lifting device 12 is an origin, and a position along the axial direction of the preform 400 (consistent with the length direction) is a rod position, and each rod has Corresponding length (distance between the position and the origin), core diameter d and optical cladding diameter D and rod diameter (diameter of preform 400).
  • the first caliper unit 191 detects that the detected core layer diameter of the rod position L is d, and records both L and d into the first central control device 20.
  • the first central control device 20 calculates a predetermined optical cladding diameter target corresponding to the corresponding rod position according to the rod position L and its corresponding core diameter d, and the optical cladding target is the detection core diameter of the corresponding rod position. 4.15 times d.
  • the second caliper unit 193 detects the optical cladding diameter every 1 minute, and transmits the detection optical cladding diameter to the first central control device 20.
  • the second torch 16 has an initial SiCl 4 flow rate of 50 g/min, which is adjusted based on the detected optical cladding diameter.
  • the flow rate of SiCl 4 of the second burner 16 is increased by 0.5 g/min, when the diameter of the detection optical cladding is larger than the optical cladding of the corresponding rod With the diameter target, the flow of SiCl 4 of the second burner 16 is reduced by 0.5 g/min.
  • the diameter of the core layer ranges from 58 to 60 mm, and the diameter of the optical cladding is in the range of 240 to 258 mm.
  • the diameter of the core layer d along the axial direction is different from that of the optical cladding diameter D, D/d
  • the fluctuation is 0.2.
  • the diameter of the core layer deposited is in the range of 58 to 59 mm
  • the diameter of the optical cladding is in the range of 240 to 244 mm
  • the fluctuation in D/d is 0.05.
  • the first central control device 20 adjusts the flow rate of the SiCl 4 of the first torch 15 according to the diameter of the monitoring core layer, thereby ensuring the consistency of the core diameter of the deposition growth.
  • the first central control device 20 sets the optical cladding target according to the detection core diameter of the corresponding rod position, and adjusts the flow of the SiCl 4 of the second burner 16 according to the optical cladding target and the detection optical cladding diameter to perform dynamic precision
  • the regulation ensures the consistency of the optical cladding diameter and further ensures the consistency of the core-package ratio, thereby improving the manufacturing yield of the mandrel 401.
  • the time when the first caliper unit 191 and the second caliper unit 193 detect the interval is not limited.
  • first caliper unit 191 and the second caliper unit 193 are not limited to a CCD camera, and may also be other measurement distance sensors, such as an ultrasonic sensor.
  • the caliper unit 190 can be a caliper unit disposed under the deposition chamber 11, and then the image is processed by the image processing unit in the first central control device 20 to obtain the core diameter and the diameter of the optical cladding. .
  • the first central control device 20 pre-stores corresponding preset core layer diameter range, core layer diameter target and optical cladding diameter target according to each rod position, according to the detected core layer diameter and the preset core layer diameter range. adjusting the flow rate of SiCl 4 of a second burner 16, based on the monitored optical cladding diameter and the clad diameter of the optical target adjusting SiCl 4 detector 16 flow of the second torch.
  • the second manufacturing apparatus 200 is for depositing on the mandrel 401 by an out-of-pipe vapor deposition method (OVD) to form an outer cladding 403 to form the preform 400.
  • ODD out-of-pipe vapor deposition method
  • the preform 400 coincides with the axis 101 along its longitudinal axis.
  • the second manufacturing apparatus 200 is provided with a distance measuring unit 201, a deposition torch 203, a second central control unit 205, and a deposition target rod 207.
  • the ranging unit 201 and the deposition torch 203 are communicatively coupled to the second central control unit 205.
  • the ranging unit 201 is used to monitor the rod diameter of the preform 400.
  • the distance measuring unit 201 is an ultrasonic range finder. It will be appreciated that the second manufacturing apparatus 200 also includes other necessary or non-essential structures, such as deposition cavities, which are not described herein.
  • the preform 400 has an axis 409 (along the length of the preform).
  • the ranging unit 201 and the deposition torch 203 are movable relative to the preform 400 along an axis generally parallel to the axis 409.
  • the second central control device 205 pre-stores the first motion path of the ranging unit 201 along an axis parallel to the axis 409, and controls the ranging unit 201 to move according to the first motion path when detecting the rod diameter, and controls the ranging Unit 201 detects the rod diameter and its corresponding rod position at regular intervals.
  • the second central control device 205 pre-stores a second path of motion of the deposition torch 203 along an axis parallel to the axis 409 and controls the deposition torch 203 to move in accordance with the second path of motion and to record the bar relative to the preform 400 .
  • the distance measuring unit 201 and the deposition torch 203 are movable relative to the preform 400.
  • the rod diameter of the preform 400 is detected and the detection rod diameter is fed back to the
  • the second central control device 205 the central control device 205 presets a reference rod diameter, and the second central control device 205 compares the detection rod diameter corresponding to each rod position with the reference rod diameter.
  • the flow of SiCl 4 when the deposition torch 203 is moved to the corresponding rod position is adjusted.
  • the ranging unit 201 and the deposition torch 203 do not define movement relative to the preform 400 along an axis parallel to the axis 409 of the preform 400, and the ranging unit 201 can measure the diameter of the preform 400.
  • the deposition torch 203 can provide the preform 400 with a material for deposition growth.
  • the ranging unit 201 is configured to monitor the rod diameter of the preform 400 and feed back the detected detection rod diameter to the second central control device 205, and the second central control device 205 is configured according to the The rod diameter is adjusted to adjust the flow of SiCl 4 of the deposition torch.
  • the deposition temperature of the core layer is detected every predetermined time interval, and the detected deposition temperature is a detection deposition temperature, and the detection deposition temperature is a first group, and the first group includes the detection sequence.
  • T1, t2, t3, ... t(i-1), ti taking the average of the detected deposition temperatures for N consecutive times, the average value constitutes the second group, and the second group is in the average order Including t1', t2', t3'...t(i-1)', ti', let t(i-1)' be the pre-value of ti', compare ti' with the preset target temperature, when When the deviation of ti' from the preset target temperature is not greater than the preset temperature deviation, the H 2 flow rate in the first torch remains unchanged, when ti' is between the preset target temperature When the deviation is greater than the preset temperature deviation, comparing ti' with t(i-1)', and adjusting the first burner according to the difference between the t
  • the H 2 flow rate of the first burner is increased by 0.1 L/min without being compared with the previous value.
  • the detecting optical cladding diameter is smaller than the optical cladding diameter target of the corresponding rod position, adjusting the flow rate of the second burner for providing the optical cladding growth material; when the detection optical cladding diameter is larger than The optical cladding diameter target of the corresponding rod position is adjusted to reduce the flow rate of the second burner for providing the optical cladding growth material.
  • the flow rate of the second burner 16 is increased by 0.5 g/min, when the diameter of the detection optical cladding is larger than the optical cladding diameter target of the corresponding rod Then, the flow rate of the second burner 16 is reduced by 0.5 g/min.
  • the distance measuring unit is an ultrasonic range finder.
  • the ranging unit detects the rod diameter and its corresponding rod position at regular intervals.
  • the ranging unit tests the real-time bar diameter distribution every 5 minutes.
  • the distance measuring unit detects the rod diameter relative to the preform movement along an axis parallel to the axis of the preform and records the detection rod diameter and the corresponding position, for example, the first rod diameter B1 and its corresponding rod position L1, and second The rod diameter B2 and its corresponding rod position L2, the third rod diameter..., and so on.
  • the ranging unit can move relative to the preform, the preform has a rod position, and when the ranging unit moves to a corresponding rod position, the rod diameter of the preform is detected, corresponding to each rod position.
  • the flow of SiCl 4 when the deposition burner is moved to the corresponding rod position is adjusted.
  • the optical fiber preform manufacturing device and the manufacturing method thereof provide real-time control of adjusting the flow rate of H 2 according to the detection deposition temperature, thereby ensuring the stability of the surface temperature of the mandrel, thereby improving the stability of the refractive index of the mandrel and improving the stability of the core rod.
  • the optical cladding target and the detection optical cladding diameter adjust the flow rate of the second burner to perform dynamic precise adjustment, ensure the consistency of the optical cladding diameter, and further ensure the consistency of the core-package ratio, and improve the manufacturing yield of the core rod .
  • the deposition torch is adjusted to adjust the flow of SiCl 4 at the corresponding rod position, thereby realizing the correction of the rod diameter during the deposition process, so that the rod diameter of the preform is very consistent. To further improve the performance and manufacturing yield of the preform.

Abstract

一种光纤预制棒的制造设备(100)，其包括沉积靶棒(14)、第一喷灯(15)、第一中控装置(20)及温度测量单元(18)，沉积靶棒(14)用于在沉积过程中附着粉末形成芯棒，芯棒(401)包括芯层(405)及包覆于所述芯层上的光学包层(407)，第一喷灯(14)的喷灯口朝向所述沉积靶棒(14)设置，温度测量单元(18)用于监测所述芯层(405)的沉积温度且每隔预设时间将检测到的沉积温度反馈至所述第一中控装置(20)，第一中控装置(20)依据检测到的沉积温度控制调节第一喷灯(15)的H2流量。

Description

光纤预制棒的制造设备及其制造方法 技术领域
本发明涉及光纤预制棒制造技术领域，特别涉及一种光纤预制棒的制造设备及其制造方法。
背景技术
光纤预制棒制造分为芯棒制造与外包层制造，即先制造芯棒（包括芯层和光学包层），再在芯棒外面沉积包层而制得光纤预制棒。光纤预制棒芯棒的制造方法主要有轴向气相沉积法（VAD）、改进的化学气相沉积法（MCVD）、等离子体化学气相沉积法（PCVD）和管外气相沉积法（OVD），外包层制造以直接OVD合成和石英套管组装为主。然而，不管通过哪种方法制造光纤预制棒，其在制造过程中，出于某些因素的影响，造成产品良率不高，诸如，排气时因气流波动会造成芯棒所处的环境温度波动，致使所述芯层中的掺杂物分布不均，会造成轴向剖面一致性不好。
发明内容
有鉴于此，有必要提供一种避免上述问题的光纤预制棒的制造设备及其制造方法。
一种光纤预制棒的制造设备，其包括沉积靶棒、第一喷灯及第一中控装置，所述沉积靶棒用于在沉积过程中附着粉末形成芯棒，所述芯棒包括芯层及包覆于所述芯层上的光学包层，所述第一喷灯的喷灯口朝向所述沉积靶棒设置，所述第一喷灯与所述第一中控装置连接，所述制造设备还包括与所述第一中控装置连接的温度测量单元，所述温度测量单元用于监测所述芯层的沉积温度且每隔预设时间将检测到的沉积温度反馈至所述第一中控装置，所述第一中控装置依据所述检测到的沉积温度控制调节所述第一喷灯的H2流量。
进一步地，所述第一中控装置预存储预设目标温度及预设温度偏差，设所述检测到的沉积温度为检测沉积温度，所述检测沉积温度组成第一群组，所述第一群组依检测顺序包括t1、t2、t3、……t(i-1)、ti，所述第一中控装置取连续N次的检测沉积温度的平均值，所述平均值组成第二群组，所述第二群组依取平均值顺序包括t1’、t2’、t3’……t(i-1)’、ti’，设t(i-1)’为ti’的前值，将ti’与所述预设目标温度比较，当ti’相较于所述预设目标温度的偏差不大于所述预设温度偏差时，则所述第一喷灯中的H2流量保持不变。
进一步地，当ti’大于所述预设目标温度且ti’与所述预设目标温度之间的偏差大于所述预设温度偏差时，则将ti’与t(i-1)’比较，若ti’大于t(i-1)’，则调节降低所述第一喷灯中的的H2流量；若ti’小于t(i-1)’，则H2流量保持不变。
进一步地，当ti’小于所述预设目标温度且ti’与所述预设目标温度之间的偏差大于所述预设温度偏差时，则将ti’与t(i-1)’比较，若ti’小于t(i-1)’时，则调节增加第一喷灯中H2流量。
进一步地，所述第一中控装置预存储预设目标温度及预设温度偏差，设所述检测到的沉积温度为检测沉积温度，所述检测沉积温度组成第一群组，其包括t1、t2、t3……t(i-1)、ti，对所述第一群组的全部或部分检测沉积温度取平均值，当所述平均值与所述预设温度目标之间的偏差不大于预设温度偏差，则所述第一喷灯的H2流量保持不变；当所述平均值与所述预设温度目标之间的偏差大于所述预设温度偏差，则调节增加所述第一喷灯的H2流量。
进一步地，所述预设目标温度为1050℃，所述预设温度偏差为2℃。
进一步地，所述第一中控装置调节所述第一喷灯的H2的流量为0.1L/min。
进一步地，所述温度测量单元为红外热成像仪。
一种光纤预制棒的制造方法，所述预制棒包括芯棒及包覆于所述芯棒外侧面的外包层，所述芯棒包括芯层及包覆于所述芯层外侧面的光学包层，所述制造方法包括监测芯层的沉积温度，依据所述监测芯层的沉积温度控制调节提供芯层生长原料的第一喷灯的中的H2流量。
进一步地，每间隔一预设时间对芯层的沉积温度进行检测，设检测到的沉积温度为检测沉积温度，所述检测沉积温度组成第一群组，所述第一群组依检测顺序包括t1、t2、t3、……t(i-1)、ti，取连续N次的检测沉积温度的平均值，所述平均值组成第二群组，所述第二群组依取平均值顺序包括t1’、t2’、t3’……t(i-1)’、ti’，设t(i-1)’为ti’的前值，将ti’与所述预设目标温度比较，当ti’相较于所述预设目标温度的偏差不大于所述预设温度偏差时，则所述第一喷灯中的H2流量保持不变，当ti’与所述预设目标温度之间的偏差大于所述预设温度偏差时，将ti’与t(i-1)’比较，并依据所述ti’与t(i-1)’之间的差值调节所述第一喷灯中的H2流量。
相对于现有技术，本发明提供的光纤预制棒制造设备及其制造方法，依据检测沉积温度实时控制调节H2的流量，保证芯棒的表面温度的稳定性，进而提高了芯棒折射率的稳定性，亦提高了光纤预制棒的产品良率。
 附图说明
图1是本发明较佳实施例提供的光纤预制棒制造系统的示意图。
图2是预制棒端面示意图。
图3是第一制造设备示意图。
图4是原工艺与本实施例的单根棒折射率轴向测试对比图。
图5是芯棒的示意图。
图6是第二制造设备示意图。
主要元件符号说明
光纤预制棒制造系统 300
预制棒 400
芯棒 401
外包层 403
芯层 405
光学包层 407
轴线 409、101
第一制造设备 100
第二制造设备 200
沉积腔体 11
提升装置 12
旋转装置 13
沉积靶棒 14、207
第一喷灯 15
第二喷灯 16
气体供应装置 17
温度测量单元 18
测径单元 19
第一中控装置 20
测距单元 201
沉积喷灯 203
第二中控装置 205
下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。在不冲突的情况下，下述的实施例及实施例中的特征可以相互组合。
需要说明的是，在本发明中，当一个组件被认为是与另一个组件“相连”时，它可以是与另一个组件直接相连，也可以是通过居中组件与另一个组件间接相连。
除非另有定义，本文所使用的所有的技术和科学术语与属于本发明的技术领域的技术人员通常理解的含义相同。本文中在本发明的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本发明。
请参阅图1，本发明提供一种光纤预制棒制造系统300，用于制造预制棒400。请参阅图2，所述预制棒400包括芯棒401及包覆在所述芯棒401上的外包层403。
光纤预制棒制造系统300包括第一制造设备100及第二制造设备200。第一制造设备100用于沉积制造芯棒401，芯棒401包括由玻璃材料制成的用于提供生长基的起始棒以及通过在所述起始棒的端部沉积粉末而形成的芯层405及包覆在所述芯层405上的光学包层407。所述芯层405的折射率高于所述光学包层407的折射率。第二制造设备200用于沉积制造外包层403。本实施方式中，第一制造设备100通过轴向气相沉积法（VAD）制备芯棒401；第二制造设备200通过管外气相沉积法（OVD）于芯棒401上沉积形成外包层403。
请参阅图3所示，第一制造设备100包括沉积腔体11、提升装置12、旋转装置13、沉积靶棒14、第一喷灯15、第二喷灯16、气体供应装置17、温度测量单元18、测径单元19及第一中控装置20。
提升装置12设于沉积腔体11的上方，旋转装置13安装于提升装置12上。沉积靶棒14装设于旋转装置13上并收容于沉积腔体11。设旋转装置13具轴线101。提升装置12用于驱动沉积靶棒14沿轴线101上升或下降，旋转装置13用于驱动沉积靶棒14绕轴线101转动。沉积靶棒40用于在沉积过程中附着粉末形成芯棒401。
第一喷灯15及第二喷灯16位于沉积腔体11的下方一侧。第一喷灯15的喷灯口（图未标）及第二喷灯16的喷灯口（图未标）均位于沉积腔体11的内部并朝向沉积靶棒14设置。利用第一喷灯15于芯棒401的末端沉积粉末形成芯层405，以令芯层405从芯棒401的末端向下生长。换句话说，所述第一喷灯15用于提供芯层生长原料。利用第二喷灯16于芯棒401的端部沉积粉末形成光学包层407，以令光学包层407沉积于芯层405上并从芯棒401的末端向下生长。换句话说，所述第二喷灯16用于提供光学包层生长原料。
气体供应装置17与第一喷灯50及第二喷灯60连接，用于给第一喷灯50及第二喷灯60提供气体，如SiCl4、GeCl4等，以及燃料，如氢和氧的混合物。气体供应装置17包括多个气体供应部（图未示）。本实施例中，多个所述气体供应部包括SiCl4供应部、GeCl4供应部、Ar供应部、O2供应部、H2供应部等，多个所述气体供应部分别通过管道与第一喷灯50及第二喷灯60连接。每一气体供应部与相应喷灯之间设有气体控制单元（图未示），用于控制不同阶段的气流量。多个气体控制单元与第一中控装置20通信连接。
SiCl4流量可在0.1g/min～20g/min间调整），在高温情况下火焰水解生成SiO2，用于形成预制棒的包层与芯层；GeCl4流量可在0.01g/min～1.0g/min间调整，在高温情况下火焰水解生成GeO2，掺杂在芯层以提高芯层折射率。输送SiCl4、GeCl4的管道表面需要敷设加热带，温度控制在100℃。
H2流量可在0.1L/min～30L/min间调整；O2流量可在0.1L/min～50L/min间调整，其中，H2起燃烧作用，O2起助燃作用，另外，为了让H2完全反应，在流量设定时，需要将O2流量设置成富余的。
Ar流量可在0.1L/min到10L/min间调整。Ar的作用主要有两个，其一作为载气，运载原料气体；其二，将H2、O2隔开，防止其在喷灯内混合、反应。
温度测量单元18位于沉积腔体11的下方，并与第一喷灯15及第二喷灯16间隔设置。温度测量单元18用于监测芯棒401末端的芯层405沉积温度，且每隔预设时间将检测到的沉积温度反馈至第一中控装置20。将温度测量单元18检测的沉积温度称为检测沉积温度。本实施例中，温度测量单元18为红外热成像仪。第一中控装置20预存储预设目标温度、预设温度偏差及预设调节流量。第一中控装置20将所述检测沉积温度与所述预设目标温度进行计算处理，并依据第一中控装置20的处理结果控制H2供应部进行对第一喷灯15及第二喷灯16进行气体供应。
设所述检测到的沉积温度为检测沉积温度，所述检测沉积温度组成第一群组，所述第一群组依检测顺序包括t1、t2、t3、……t(i-1)、ti，所述第一中控装置20取连续N次的检测沉积温度的平均值，所述平均值组成第二群组，所述第二群组依取平均值顺序包括t1’、t2’、t3’……t(i-1)’、ti’，设t(i-1)’为ti’的前值，将ti’与所述预设目标温度比较，当ti’相较于所述预设目标温度的偏差不大于所述预设温度偏差时，则所述第一喷灯15中的H2流量保持不变。
当ti’大于所述预设目标温度且ti’与所述预设目标温度之间的偏差大于所述预设温度偏差时，则将ti’与t(i-1)’比较，若ti’大于t(i-1)’，则调节降低所述第一喷灯15中的的H2流量；若ti’小于t(i-1)’，则H2流量保持不变。
当ti’小于所述预设目标温度且ti’与所述预设目标温度之间的偏差大于所述预设温度偏差时，则将ti’与t(i-1)’比较，若ti’小于t(i-1)’时，则调节降增加第一喷灯15中H2流量。
具体地，设1050℃为预设目标温度，设预设温度偏差为2℃，设预设调节流量为0.1L/min。温度测量单元18每间隔10S时间检测采集一次芯棒401末端芯层405的沉积温度，依次记为t1、t2、t3、……t(i-1)、ti。所述检测沉积温度组成第一群组，其依检测顺序包括t1、t2、t3、……t(i-1)、ti。温度测量单元18将所述检测沉积温度反馈至第一中控装置20。第一中控装置20取连续5次的检测沉积温度并计算平均值，例如，t1至t5的平均值记为t1’、t2至t6的平均值记为t2’,依次类推。所述平均值组成第二群组。所述第二群组包括t1’、t2’、t3’…… t(i-1)’、ti’。设t(i-1)’为ti’的前值，例如，t2’为t1’的前值。每个平均值分别与1050℃及所述前值比较（如t2’跟1050℃与t1’比较；t3’跟1050℃与t2’比较……），如一平均值与所述1050℃相比偏差不大于2℃，则H2流量保持不变；如该平均值比所述1050℃大于2℃以上，则与前值比较，以t2’为例，如t2’大于t1’则H2流量降低0.1L/min，如t2’小于t1’，则H2流量保持不变；如比所述预设目标温度小2℃以上，则与前值比较，以t2’为例，如t2’大于t1’则H2流量保持不变，如t2’小于t1’，则H2流量增加0.1L/min。
可以理解，可以不取平均值，而依据检测沉积温度调控喷灯中的H2流量。
可以理解，若平均值与所述预设目标温度之间的偏差大于2℃，在不与所述前值比较的情况下，将H2流量增加0.1L/min。
可以理解，不限定N个检测沉积温度为连续检测顺序，其也可以为随机抽取的N个检测沉积温度。
可以理解，不限定温度测量单元18每间隔10S时间检测采集一次沉积温度，其也可以间隔其它时间检测采集。
可以理解，预设目标温度，预设温度偏差，预设调节流量能够依实际沉积制造预制棒的过程中进行设定。
可以理解，中控装置20依据所述检测沉积温度及处理结果计算预设调节流量控制H2调节流量。
可以理解，不限定温度测量单元18为红外热成像仪，其也可以为其他温度感测器。
可以理解，所述检测沉积温度组成第一群组，其包括t1、t2、t3……t(i-1)、ti，对所述第一群组的全部检测沉积温度取平均值，当所述平均值与预设温度目标之间的偏差不大于预设温度偏差，则所述第一喷灯15的H2流量保持不变；当所述平均值与所述预设温度目标之间的偏差大于预设温度偏差，则调节增加H2流量，其中每大1℃，则调节所述第一喷灯15的H2流量增加0.1L/min，例如大1℃，调节所述第一喷灯15的H2流量0.1L/min，大2℃，则调节所述第一喷灯15的H2增加流量0.2L/min。
可以理解，气体供应装置17可以省略，所述第一制造设备100与外部的气体供应装置连接。
可以理解，提升装置12、旋转装置13、沉积腔体11可以省略。
由于在芯层405的沉积过程中，温度测量单元18对末端芯层405的沉积温度进行实时监测并反馈至第一中控装置20，第一中控装置20依据检测沉积温度实时控制调节H2的流量，保证芯棒401的表面温度的稳定性，进而提高了芯棒405折射率的稳定性。本实施例，基于面温度采集技术，实时调整气体流量、精确控制芯棒401的沉积，能够有效防止密度梯度大而导致芯棒开裂，从而提高产品质量及良率。请参阅图4所示，为本实施例与之原工艺（未通过依据芯层沉积温度调节H2流量）的单根棒折射率轴向测试对比图。本实施例中，芯棒401的最高温度与最低温度保持在10℃以内。
可以理解，不限定为监测末端芯层405的沉积温度，其也可以在用其他工艺制造芯棒时，监测芯棒芯层的沉积温度，诸如管外气相沉积法（OVD）。
测径单元19包括第一测径单元191及第二测径单元193。第一测径单元191位于沉积腔体11的侧下方，邻近温度测量单元18并远离第一喷灯15设置，用于测量芯棒401的末端芯层405的直径。第二测径单元193位于沉积腔体11的侧下方，并邻近第二喷灯16设置，用于测量芯棒401末端光学包层407的直径。本实施例中，第一测径单元191与第二测径单元193为CCD相机。设第一测径单元191检测到的芯层直径为检测芯层直径，设第二测径单元193检测到的光学包层直径为检测光学包层直径。第一测径单元191每间隔第一预设测径时间即对末端芯层直径进行检测并将所述检测芯层直径反馈至第一中控装置20，第二测径单元193每间隔第二预设测径时间检测光学包层并将所述检测光学包层直径反馈至第一中控装置20。
请参阅图5，设芯层直径为d,设光学包层直径为D。测径单元191每间隔1分钟时间即对末端芯层直径进行检测。第一中控装置20预存储芯层直径目标，本实施方式中，预设芯层直径目标为一预设芯层直径范围，所述预设芯层直径范围为58.3～58.7mm。如所述检测芯层直径在58.3～58.7mm的范围之内，则第一喷灯15的SiCl4流量不变；如所述检测芯层直径小于所述预设芯层直径范围的最小阀值58.3mm，则第一中控装置20控制调节第一喷灯15的SiCl4流量增加0.05g/min，如所述检测芯层直径大于所述预设芯层直径范围的最大阀值58.7mm，则第一中控装置20控制调节第一喷灯15的SiCl4流量降低0.05g/min。
本实施方式中，设所述预制棒400与提升装置12邻近的端点为原点，设沿所述预制棒400的轴线方向（与长度方向一致）的某一位置为棒位，每一棒位具有相应的长度（该位置与所述原点之间的距离）、芯层直径d及光学包层直径D及棒径（预制棒400的直径）。具体地，第一测径单元191检测到棒位L的检测芯层直径为d,将L与d均录入第一中控装置20。
第一中控装置20根据棒位L及其对应的芯层直径d，计算处理得出相应棒位的预设光学包层直径目标，所述光学包层目标为相应棒位的检测芯层直径d的4.15倍。第二测径单元193每间隔1分钟检测一次光学包层直径，并将所述检测光学包层直径传送至第一中控装置20。第二喷灯16初始SiCl4流量为50g/min，基于所述检测光学包层直径进行调节。当所述检测光学包层直径小于相应棒位的光学包层直径目标，则第二喷灯16的SiCl4流量增加0.5g/min，当所述检测光学包层直径大于相应棒位的光学包层直径目标，则第二喷灯16的SiCl4流量降低0.5g/min。
常规工艺制得的芯棒中，芯层直径范围为58～60mm,光学包层直径范围为240～258mm，沿轴向芯层直径d与光学包层直径D的变化趋势不相同，D/d的波动为0.2。而本实施例中，沉积得到的芯层直径范围为58～59mm,光学包层直径范围为240～244mm，D/d的波动为0.05。由于第一测径单元191对末端芯层405直径进行监测，且第一中控装置20依据监测芯层直径情况调节第一喷灯15的SiCl4流量，进而保证了沉积生长的芯层直径一致性，且第一中控装置20依据相应棒位的检测芯层直径设定光学包层目标，并依据所述光学包层目标及检测光学包层直径调节第二喷灯16的SiCl4流量进行动态精确调控，保证光学包层直径的一致性，且进一步保证的芯包比的一致性，提高了芯棒401的制造良率。
可以理解，不限定第一测径单元191、第二测径单元193检测间隔的时间。
可以理解，不限定第一测径单元191、第二测径单元193为CCD相机，其也可以为其他测量距离感应器，诸如，超声波感测器。
可以理解，测径单元190可以为一个测径单元，其设置于沉积腔体的11的下方，再通过于第一中控装置20设置图像处理单元处理图像，取得芯层直径及光学包层直径。
可以理解，第一中控装置20依据每一棒位预存储对应的预设芯层直径范围、芯层直径目标及光学包层直径目标，依据监测到检测芯层直径及预设芯层直径范围调节第二喷灯16的SiCl4流量，依据监测到检测光学包层直径及光学包层直径目标调节第二喷灯16的SiCl4流量。
第二制造设备200用于通过管外气相沉积法（OVD）于芯棒401上沉积形成外包层403进而形成预制棒400。所述预制棒400沿其长度方向的轴线与轴线101重合。
请参阅图6，第二制造设备200中设置测距单元201、沉积喷灯203、第二中控装置205及沉积靶棒207。测距单元201、沉积喷灯203与第二中控装置205通信连接。测距单元201用于监测预制棒400的棒径。本实施方式中，测距单元201为超声波测距仪。可以理解，第二制造设备200还包括其它必要或非必要结构，诸如沉积腔体，在此不作赘述。
预制棒400具有轴线409（沿预制棒的长度方向）。测距单元201及沉积喷灯203能够沿大致平行于所述轴线409的轴线相对所述预制棒400运动。第二中控装置205预存储测距单元201沿平行于所述轴线409的轴线运动的第一运动路径，并控制测距单元201在检测棒径时依第一运动路径运动，且控制测距单元201每隔一定时间检测棒径及其对应棒位位置。第二中控装置205预存储沉积喷灯203沿平行于所述轴线409的轴线运动的第二运动路径，并控制沉积喷灯203依所述第二运动路径运动并及记录相对预制棒400的棒位。
所述测距单元201及所述沉积喷灯203能够相对所述预制棒400运动，所述测距单元201运动至相应棒位时检测所述预制棒400的棒径并将检测棒径反馈至所述第二中控装置205，所述中控装置205预设参考棒径，所述第二中控装置205依据每一棒位对应的检测棒径与所述参考棒径的比较结果，对所述沉积喷灯203运动至相应棒位时的SiCl4流量进行调整。
当某一棒位的检测棒径大于所述参考棒径时，所述第二中控装置205控制所述沉积喷灯203运动至相应棒位时调节减少所述沉积喷灯203的SiCl4流量；当某一棒位的检测棒径小于所述参考棒径时，所述第二中控装置205控制所述沉积喷灯203运动至相应棒位时调节增大所述沉积喷灯的SiCl4流量。
本实施例中，测距单元201每5分钟测试一次实时棒径分布。测试时，测距单元201沿平行于预制棒400的轴线409的轴线相对预制棒400运动检测预制棒400的棒径并将检测棒径与对应位置（每隔2mm记录一个棒径值）反馈至第二中控装置205，例如第一棒径B1及其对应的棒位位置L1，第二棒径B2及其对应的棒位位置L2，第三棒径……，依次类推。第二中控装置205计算得出所述检测棒径（B1，B2……）的平均值B’作为参考棒径，并计算各点的检测棒径与所述参考棒径B’之间的棒径差值，例如，B1与B’之间的棒径差值为B1’，B2与B’之间的棒径差值为B2’……，依次类推。第二中控装置205将所述棒径差值与沉积喷灯205运动路径关联，于相应棒位，当所述参考棒径与检测棒径之间的偏差每相差1mm，沉积喷灯205行进至对应棒位位置时，沉积喷灯205的SiCl4流量相应调整0.5g/min。
可以理解，所述测距单元201及沉积喷灯203不限定沿平行于预制棒400的轴线409的轴线相对预制棒400运动，所述测距单元201能够测量出所述预制棒400的棒径即可，沉积喷灯203能够对预制棒400提供沉积生长的原料即可。
可以理解，所述测距单元201用于监测所述预制棒400的棒径并将检测到的检测棒径反馈至所述第二中控装置205，所述第二中控装置205依据所述检测棒径对所述沉积喷灯的SiCl4流量进行调整。
可以理解，所述参考棒径可以不为所述检测棒径的平均值，所述第二中控装置205中依据所需预设参考棒径，第二中控装置205依据每一棒位对应的检测棒径与参考棒径的比较结果，对所述沉积喷灯于相应棒位的SiCl4流量进行调整。
常规通过管外气相沉积法（OVD）于芯棒上沉积形成外包层形成的预制棒，棒径范围为239～246mm，棒径波动为8mm。而本实施例中，第二中控装置205依据测距单元201检测到的检测棒径控制沉积喷灯205在相应棒位位置调节SiCl4流量，实现于沉积过程中对棒径进行修正，其棒径范围为241～243mm,单根棒直径波动2mm,预制棒400的棒径具很好的一致性，进一步提高预制棒400的性能及制造良率。另外，也能够提高所述预制棒400沿轴向的模场直径及截至波长均匀，本实施方式中，所述预制棒400于拉丝后标准差11，超标率为0.1%。
本发明还提供一种光纤预制棒的制造方法，其包括以下步骤：
步骤601,于沉积靶棒上附着粉末形成芯棒，所述芯棒包括芯层及光学包层。本实施例中，通过轴向气相沉积法制造所述芯棒。所述沉积靶棒能够相对用于提供提供芯层生长原料的第一喷灯运动。
步骤602，于芯棒的光学包层沉积粉末形成外包层，进而形成预制棒。本实施例中，通过管外气相沉积法制造所述芯棒。
在步骤601中，还包括监测芯棒的芯层405的沉积温度，依据所述监测芯层的沉积温度控制调节提供芯层生长原料的第一喷灯的中的H2流量。
进一步地，每间隔一预设时间对芯层的沉积温度进行检测，设检测到的沉积温度为检测沉积温度，所述检测沉积温度组成第一群组，所述第一群组依检测顺序包括t1、t2、t3、……t(i-1)、ti，取连续N次的检测沉积温度的平均值，所述平均值组成第二群组，所述第二群组依取平均值顺序包括t1’、t2’、t3’……t(i-1)’、ti’，设t(i-1)’为ti’的前值，将ti’与所述预设目标温度比较，当ti’相较于所述预设目标温度的偏差不大于所述预设温度偏差时，则所述第一喷灯中的H2流量保持不变，当ti’与所述预设目标温度之间的偏差大于所述预设温度偏差时，将ti’与t(i-1)’比较，并依据所述ti’与t(i-1)’之间的差值调节所述第一喷灯中的H2流量。
当ti’大于所述预设目标温度且ti’与所述预设目标温度之间的偏差大于所述预设温度偏差时，则将ti’与t(i-1)’比较，若ti’大于t(i-1)’，则调节降低所述第一喷灯15中的的H2流量；若ti’小于t(i-1)’，则H2流量保持不变。
当ti’小于所述预设目标温度且ti’与所述预设目标温度之间的偏差大于所述预设温度偏差时，则将ti’与t(i-1)’比较，若ti’小于t(i-1)’时，则调节降增加第一喷灯中H2流量。
具体地，设1050℃为预设目标温度，设预设温度偏差为2℃，设预设调节流量为0.1L/min。每间隔10S时间检测采集一次芯棒401末端芯层405的沉积温度，依次记为t1、t2、t3、t4、t5、t6、t7、t8、t9……。所述检测沉积温度组成第一群组，其包括t1、t2、t3、t4、t5、t6、t7、t8、t9……。温度测量单元18将所述检测沉积温度反馈至第一中控装置20。第一中控装置20取连续5次的检测沉积温度并计算平均值，例如，t1至t5的平均值记为t1’、t2至t6的平均值记为t2’,依次类推。所述平均值组成第二群组。所述第二群组包括t1’、t2’、t3’……。t2’为t1’的前值。每个平均值分别与1050℃及所述前值比较（如t2’跟1050℃与t1’比较；t3’跟1050℃与t2’比较……），如一平均值与所述1050℃相比偏差不大于2℃，则H2流量保持不变；如该平均值比所述1050℃大于2℃以上，则与前值比较，以t2’为例，如t2’大于t1’则第一喷灯的H2流量降低0.1L/min，如t2’小于t1’，则H2流量保持不变；如比预设目标温度小2℃以上，则与前值比较，以t2’为例，如t2’大于t1’则H2流量保持不变，如t2’小于t1’，则H2流量增加0.1L/min。
可以理解，若平均值与所述预设目标温度之间的偏差大于2℃，在不与所述前值比较的情况下，将第一喷灯的H2流量增加0.1L/min。
可以理解，不限定N个检测沉积温度为连续检测顺序，其也可以随机抽取的N个检测沉积温度。
可以理解，预设目标温度，设预设温度偏差为2℃，预设调节流量能够依实际沉积制造预制棒的过程中进行设定。
可以理解，不限定为运用轴向气相沉积法，其也可以为管外气相沉积法、改进的化学气相沉积法（MCVD）、等离子体化学气相沉积法（PCVD）等其它方法，只要能在芯层的沉积生长过程中，通过监测芯层的沉积温度并依据芯层的沉积温度实时调整H2的流量，以保证温度的稳定性。
在步骤601中，还包括监测芯层直径，设测量到的芯层直径为检测芯层直径，当所述检测芯层直径与预设芯层直径目标存在偏差时，调节用于提供所述芯层生长原料的第一喷灯的SiCl4的流量。本实施例中，芯层直径为芯层末端直径，预设芯层直径目标为预设芯层直径范围。
当检测末端芯层直径不在预设芯层直径范围时，调节用于提供芯层生长原料的第一喷灯的SiCl4流量。
进一步地，当检测芯层直径小于预设芯层直径范围的最小阀值时，则调节增大第一喷灯的SiCl4流量；当检测末端包层直径大于预设芯层直径范围的最大阀值时，则调节降低第一喷灯的SiCl4流量。
设芯层直径为d,设光学包层直径为D。测径单元191每间隔1分钟时间即对末端芯层直径进行检测。本实施方式中，预设芯层直径范围为58.3～58.7mm。如所述检测芯层直径在58.3～58.7mm的范围之内，则第一喷灯15的SiCl4流量不变；如所述检测芯层直径小于所述预设芯层直径范围的最小阀值58.3mm，则控制调节第一喷灯15的SiCl4流量增加0.05g/min，如所述检测芯层直径大于所述预设芯层直径范围的最大阀值58.7mm，则控制调节第一喷灯15的SiCl4流量降低0.05g/min。
在步骤601中，还包括检测所述芯棒的光学包层直径，设检测到的光学包层直径为检测光学包层直径，某一棒位的预设光学包层目标依据相应棒位的检测芯层直径设定，当某一棒位的检测光学包层直径小于相应的光学包层直径目标时，则控制增加用于提供光学包层生长原料的第二喷灯的SiCl4流量；当所述检测光学包层直径大于相应棒位的光学包层直径目标，则降低第二喷灯的SiCl4流量。
本实施例中，依据棒位预设光学包层直径目标，所述预设光学包层目标为相应棒位的检测芯层直径d的4.15倍。
进一步地，当所述检测光学包层直径小于相应棒位的光学包层直径目标，则调节增大用于提供光学包层生长原料的第二喷灯的流量；当所述检测光学包层直径大于相应棒位的光学包层直径目标，则调节减小用于提供光学包层生长原料的第二喷灯的流量。
具体地，根据棒位L及其对应的芯层直径d，计算处理得出预设光学包层直径目标，所述光学包层目标为相应棒位的检测芯层直径d的4.15倍。每间隔1分钟检测一次末端光学包层直径。第二喷灯16初始SiCl4流量为50g/min，基于所述检测光学包层直径进行调节。当所述检测光学包层直径小于相应棒位的光学包层直径目标，则第二喷灯16的流量增加0.5g/min，当所述检测光学包层直径大于相应棒位的光学包层直径目标，则第二喷灯16的流量降低0.5g/min。
可以理解，不限定为运用轴向气相沉积法，其也可以为管外气相沉积法、改进的化学气相沉积法（MCVD）、等离子体化学气相沉积法（PCVD）等其它方法，只要能在芯层及光学包层的沉积生长过程中，通过监测芯层直径及光学包层直径，实时调整第一喷灯及第二喷灯的SiCl4流量，进而保证芯层直径的一致性及光学包层直径一致性。
在步骤602中，还包括监测预制棒的棒径，依据检测到的检测棒径对沉积喷灯的SiCl4流量进行调整。
通过一测距单元监测所述预制棒的棒径，所述测距单元及沉积喷灯能够相对所述预制棒运动，所述预制棒具有棒位，所述测距单元运动至相应棒位时检测所述预制棒的棒径，依据每一棒位对应的检测棒径与参考棒径进行比较的结果，对所述沉积喷灯运动至相应棒位时的SiCl4流量进行调整。本实施方式中，测距单元为超声波测距仪。测距单元每隔一定时间检测棒径及其对应棒位位置。
本实施例中，测距单元每5分钟测试一次实时棒径分布。测试时，测距单元沿平行于预制棒的轴线的轴线相对预制棒运动检测棒径并记录所述检测棒径与对应位置，例如第一棒径B1及其对应的棒位位置L1，第二棒径B2及其对应的棒位位置L2，第三棒径……，依次类推。计算得出所述检测棒径（B1，B2……）的平均值B’作为参考棒径，并计算各点的实际棒径与所述参考棒径B’之间的棒径差值，例如，B1与B’之间的棒径差值为B1’，B2与B’之间的棒径差值为B2’……，依次类推。将所述棒径差值与所述沉积喷灯运动路径关联，直径每相差1mm，沉积喷灯行进至对应棒位位置时，SiCl4流量相应调整0.5g/min。
可以理解，所述制造方法包括通过一测距单元监测预制棒的棒径，依据检测到的检测棒径对沉积喷灯的SiCl4流量进行调整。
可以理解，所述测距单元能够相对所述预制棒运动，所述预制棒具有棒位，所述测距单元运动至相应棒位时检测所述预制棒的棒径，依据每一棒位对应的检测棒径与参考棒径进行比较的结果，对所述沉积喷灯运动至相应棒位时的SiCl4流量进行调整。
本发明提供的光纤预制棒制造设备及其制造方法，依据检测沉积温度实时控制调节H2的流量，保证芯棒的表面温度的稳定性，进而提高了芯棒折射率的稳定性，亦提高了光纤预制棒的产品良率。进一步地，依据监测芯层直径情况调节第一喷灯的SiCl4流量，进而保证了沉积生长的芯层直径一致性，且依据相应棒位的检测芯层直径设定光学包层目标，并依据所述光学包层目标及检测光学包层直径调节第二喷灯的流量进行动态精确调控，保证光学包层直径的一致性，且进一步保证的芯包比的一致性，提高了芯棒的制造良率。更甚者，依据测距单元检测到的检测棒径控制沉积喷灯在相应棒位位置调节SiCl4流量，实现于沉积过程中对棒径进行修正，致使预制棒的棒径具很好的一致性，进一步提高预制棒的性能及制造良率。
可以理解的是，本领域技术人员还可在本发明精神内做其它变化等用在本发明的设计，只要其不偏离本发明的技术效果均可。这些依据本发明精神所做的变化，都应包含在本发明所要求保护的范围之内。

Claims (10)

  1. 一种光纤预制棒的制造设备，其包括沉积靶棒、第一喷灯及第一中控装置，所述沉积靶棒用于在沉积过程中附着粉末形成芯棒，所述芯棒包括芯层及包覆于所述芯层上的光学包层，所述第一喷灯的喷灯口朝向所述沉积靶棒设置，所述第一喷灯与所述第一中控装置连接，其特征在于：所述制造设备还包括与所述第一中控装置连接的温度测量单元，所述温度测量单元用于监测所述芯层的沉积温度且每隔预设时间将检测到的沉积温度反馈至所述第一中控装置，所述第一中控装置依据所述检测到的沉积温度控制调节所述第一喷灯的H2流量。
  2. 如权利要求1所述的光纤预制棒的制造设备，其特征在于：所述第一中控装置预存储预设目标温度及预设温度偏差，设所述检测到的沉积温度为检测沉积温度，所述检测沉积温度组成第一群组，所述第一群组依检测顺序包括t1、t2、t3、……t(i-1)、ti，所述第一中控装置取连续N次的检测沉积温度的平均值，所述平均值组成第二群组，所述第二群组依取平均值顺序包括t1’、t2’、t3’……t(i-1)’、ti’、设t(i-1)’为ti’的前值，将ti’与所述预设目标温度比较，当ti’相较于所述预设目标温度的偏差不大于所述预设温度偏差时，则所述第一喷灯中的H2流量保持不变。
  3. 如权利要求2所述的光纤预制棒的制造设备，其特征在于：当ti’大于所述预设目标温度且ti’与所述预设目标温度之间的偏差大于所述预设温度偏差时，则将ti’与t(i-1)’比较，若ti’大于t(i-1)’，则调节降低所述第一喷灯中的的H2流量；若ti’小于t(i-1)’，则H2流量保持不变。
  4. 如权利要求2所述的光纤预制棒的制造设备，其特征在于：当ti’小于所述预设目标温度且ti’与所述预设目标温度之间的偏差大于所述预设温度偏差时，则将ti’与t(i-1)’比较，若ti’小于t(i-1)’时，则调节增加第一喷灯中H2流量。
  5. 如权利要求1所述的光纤预制棒的制造设备，其特征在于：所述第一中控装置预存储预设目标温度及预设温度偏差，设所述检测到的沉积温度为检测沉积温度，所述检测沉积温度组成第一群组，其包括t1、t2、t3……t(i-1)，ti，对所述第一群组的全部或部分检测沉积温度取平均值，当所述平均值与所述预设温度目标之间的偏差不大于预设温度偏差，则所述第一喷灯的H2流量保持不变；当所述平均值与所述预设温度目标之间的偏差大于所述预设温度偏差，则调节增加所述第一喷灯的H2流量。
  6. 如权利要求2至5项任意一项所述的光纤预制棒的制造设备，其特征在于：所述预设目标温度为1050℃，所述预设温度偏差为2℃。
  7. 如权利要求1至5项任意一项所述的光纤预制棒的制造设备，其特征在于：所述第一中控装置调节所述第一喷灯的H2的流量为0.1L/min。
  8. 如权利要求1所述的光纤预制棒的制造设备，其特征在于：所述温度测量单元为红外热成像仪。
  9. 一种光纤预制棒的制造方法，所述预制棒包括芯棒及包覆于所述芯棒外侧面的外包层，所述芯棒包括芯层及包覆于所述芯层外侧面的光学包层，其特征在于：所述制造方法包括监测芯层的沉积温度，依据所述监测芯层的沉积温度控制调节提供芯层生长原料的第一喷灯的中的H2流量。
  10. 如权利要求9所述的光纤预制棒的制造方法，其特征在于：每间隔一预设时间对芯层的沉积温度进行检测，设检测到的沉积温度为检测沉积温度，所述检测沉积温度组成第一群组，所述第一群组依检测顺序包括t1、t2、t3、……t(i-1)、ti，取连续N次的检测沉积温度的平均值，所述平均值组成第二群组，所述第二群组依取平均值顺序包括t1’、t2’、t3’……t(i-1)’、ti’，设t(i-1)’为ti’的前值，将ti’与所述预设目标温度比较，当ti’相较于所述预设目标温度的偏差不大于所述预设温度偏差时，则所述第一喷灯中的H2流量保持不变，当ti’与所述预设目标温度之间的偏差大于所述预设温度偏差时，将ti’与t(i-1)’比较，并依据所述ti’与t(i-1)’之间的差值调节所述第一喷灯中的H2流量。
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