WO2018092740A1 - Élément de conversion photoélectrique - Google Patents

Élément de conversion photoélectrique Download PDF

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Publication number
WO2018092740A1
WO2018092740A1 PCT/JP2017/040824 JP2017040824W WO2018092740A1 WO 2018092740 A1 WO2018092740 A1 WO 2018092740A1 JP 2017040824 W JP2017040824 W JP 2017040824W WO 2018092740 A1 WO2018092740 A1 WO 2018092740A1
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Prior art keywords
photoelectric conversion
layer
protective layer
conversion element
connection terminal
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PCT/JP2017/040824
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English (en)
Japanese (ja)
Inventor
真実 中
健治 勝亦
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株式会社フジクラ
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Priority to JP2018551628A priority Critical patent/JP6722769B2/ja
Publication of WO2018092740A1 publication Critical patent/WO2018092740A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices

Definitions

  • the present invention relates to a photoelectric conversion element.
  • a photoelectric conversion element using a dye As a photoelectric conversion element, a photoelectric conversion element using a dye has been attracting attention because it is inexpensive and high photoelectric conversion efficiency can be obtained, and various developments have been made on photoelectric conversion elements using a dye.
  • a photoelectric conversion element using a dye generally includes a transparent substrate and at least one photoelectric conversion cell provided on one surface of the transparent substrate.
  • the photoelectric conversion cell includes an electrode provided on the transparent substrate, and an electrode.
  • a counter substrate such as an opposing counter electrode, an oxide semiconductor layer provided between the electrode and the counter substrate, and a dye supported on the oxide semiconductor layer are provided.
  • Patent Document 1 As a photoelectric conversion element using such a dye, for example, a dye-sensitized solar cell element described in Patent Document 1 below is known.
  • Patent Document 1 listed below discloses a dye-sensitized solar cell element including a back sheet provided on a transparent substrate so as to cover a photoelectric conversion cell.
  • the dye-sensitized solar cell element described in Patent Document 1 has room for improvement in terms of improving the recoverability of photoelectric conversion characteristics when the ambient temperature drops from a high temperature state.
  • the present invention has been made in view of the above circumstances, and an object of the present invention is to provide a photoelectric conversion element that can improve the recovery of photoelectric conversion characteristics when the ambient temperature decreases from a high temperature state.
  • the present inventors examined the cause of the above problem in the dye-sensitized solar cell element of Patent Document 1.
  • the dye-sensitized solar cell element of Patent Document 1 when the ambient temperature becomes a high temperature state and the temperature of the photoelectric conversion cell rises, the heat of the photoelectric conversion cell covers the photoelectric conversion cell.
  • the present inventors thought that it was difficult to dissipate heat from the back sheet, which might cause the above problem.
  • the present inventors have found that the above-described problems can be solved by the following invention.
  • the present invention includes a transparent substrate, at least one photoelectric conversion cell provided on one surface of the transparent substrate, a protective layer provided on the one surface side of the transparent substrate and covering and protecting the photoelectric conversion cell;
  • the photoelectric conversion cell includes an electrode provided on the one surface of the transparent substrate and a counter substrate facing the electrode, and the photoelectric conversion device is disposed on the one surface of the transparent substrate.
  • the surface of the protective layer opposite to the transparent substrate at least a portion where the protective layer and the counter substrate of the photoelectric conversion cell overlap with each other is formed with unevenness. It is a conversion element.
  • this photoelectric conversion element when the photoelectric conversion element is viewed in a direction orthogonal to one surface of the transparent substrate, at least the protective layer and the counter substrate of the photoelectric conversion cell overlap each other on the surface opposite to the transparent substrate of the protective layer. Unevenness is formed in the part. For this reason, the surface area of the part which the protection layer and the opposing board
  • the photoelectric conversion element of the present invention it is possible to improve the recoverability of the photoelectric conversion characteristics when the ambient temperature decreases from a high temperature state. Such an effect is particularly noticeable when the photoelectric conversion element generates power with low illuminance.
  • low illuminance refers to illuminance of 10,000 lux or less.
  • the protective layer and the counter substrate are in close contact with each other.
  • the protective layer includes a resin layer, and the resin layer includes a polyimide resin.
  • the resin layer includes a polyimide resin having excellent insulating properties, more excellent insulating properties can be imparted to the protective layer.
  • the counter substrate includes a metal substrate
  • the resin layer of the protective layer is the counter substrate.
  • the metal substrate is preferably in close contact with the metal substrate.
  • the linear expansion coefficient of the resin layer is also smaller than that of the insulating plastic material other than the polyimide resin.
  • the metal substrate included in the counter substrate also has a smaller linear expansion coefficient than the insulating plastic material other than the polyimide resin.
  • a conductive member may be connected to the metal substrate, and the resin layer of the protective layer may be in close contact with the conductive member.
  • the conductive member also has a smaller linear expansion coefficient than the insulating plastic material other than the polyimide resin, like the metal substrate included in the counter substrate. For this reason, even in an environment with a large temperature change, the resin layer easily follows the conductive member, and it is sufficiently suppressed that the conductive member is pulled and cut by the resin layer.
  • the unevenness is preferably an unevenness having an arithmetic average roughness Ra of 0.2 ⁇ m or more.
  • the unevenness is an unevenness having an arithmetic average roughness Ra of less than 0.2 ⁇ m
  • the output decrease due to the temperature increase of the photoelectric conversion cell is further reduced. It is possible to quickly recover, and it is possible to further improve the recoverability of the photoelectric conversion characteristics.
  • the unevenness is preferably an unevenness having an arithmetic average roughness Ra of 0.3 ⁇ m or more.
  • the unevenness is preferably an unevenness having an arithmetic average roughness Ra of 15 ⁇ m or less.
  • the photoelectric conversion element is incorporated in the casing and used in a state where the casing and the protective layer of the photoelectric conversion element are in close contact with each other as compared with the case where the arithmetic average roughness Ra exceeds 15 ⁇ m.
  • the contact area between the housing and the protective layer of the photoelectric conversion element becomes larger. For this reason, it becomes possible to discharge
  • the protective layer is preferably black.
  • arithmetic mean roughness Ra refers to a value measured by a stylus type step gauge.
  • a photoelectric conversion element capable of improving the recoverability of photoelectric conversion characteristics when the ambient temperature falls from a high temperature state.
  • FIG. 2 is a cross-sectional end view taken along the line II-II in FIG. 1. It is a top view which shows the pattern of the transparent conductive layer in the photoelectric conversion element of FIG. It is a top view which shows the part which removed the protective layer among the photoelectric conversion elements of FIG. It is sectional drawing which shows the state which cut
  • FIGS. 1 is a plan view showing an embodiment of the photoelectric conversion element of the present invention
  • FIG. 2 is a cross-sectional end view taken along line II-II in FIG. 1
  • FIG. 3 is a transparent view of the photoelectric conversion element in FIG. 4 is a plan view showing a pattern of the conductive layer
  • FIG. 4 is a plan view showing a part of the photoelectric conversion element of FIG. 1 from which the protective layer is removed
  • FIG. 5 is a part of the photoelectric conversion element of FIG. 4 from which the protective layer is removed. It is sectional drawing which shows the state cut
  • the photoelectric conversion element 100 includes a transparent substrate 11 having a light receiving surface 11a and one surface of the transparent substrate 11 opposite to the light receiving surface 11a (hereinafter referred to as “cell installation surface”).
  • a transparent substrate 11 having a light receiving surface 11a and one surface of the transparent substrate 11 opposite to the light receiving surface 11a (hereinafter referred to as “cell installation surface”).
  • One photoelectric conversion cell 20 provided on 11b and a protective layer 30 provided on the cell installation surface 11b side of the transparent substrate 11 and covering and protecting the photoelectric conversion cell 20 are provided.
  • a transparent conductive layer 12 is provided on the cell installation surface 11 b of the transparent substrate 11.
  • the transparent conductive layer 12 includes an electrode 12A, a conductive first current extraction unit 12B for extracting current from the photoelectric conversion cell 20, and a conductive second current extraction unit 12D for extracting current from the photoelectric conversion cell 20.
  • a separation portion 12C provided so as to surround the electrode 12A, the first current extraction portion 12B, and the second current extraction portion 12D.
  • the electrode 12A, the first current extraction unit 12B, and the separation unit 12C are disposed in a state of being insulated from each other via the groove 40.
  • the electrode 12A and the second current extraction unit 12D are connected to each other.
  • the separation portion 12C, the first current extraction portion 12B, and the second current extraction portion 12D are disposed in a state of being insulated from each other via the groove 40.
  • the first current extraction portion 12B and the second current extraction portion 12D are also arranged in a state of being insulated from each other so as to be adjacent to each other through the groove 40.
  • the photoelectric conversion cell 20 is provided between the transparent substrate 11 and the counter substrate 50, the electrode 12 ⁇ / b> A provided on the cell installation surface 11 b of the transparent substrate 11, the counter substrate 50 facing the electrode 12 ⁇ / b> A.
  • an electrolyte 80 to be disposed.
  • a first external connection terminal 15a is provided on the first current extraction portion 12B, and is sealed with the first external connection terminal 15a on the first current extraction portion 12B.
  • the connection terminal 16 is provided between the unit 60 and the first external connection terminal 15a.
  • a second external connection terminal 15b is provided on the second current extraction portion 12D.
  • a current collection wiring 17 having a lower resistance than that of the electrode 12A and the second current extraction part 12D is provided so as to straddle the second current extraction part 12D and the electrode 12A.
  • first current collector wiring end 17a is located on the second current extraction portion 12D and spaced apart from the second external connection terminal 15b between the second external connection terminal 15b and the sealing portion 60.
  • second current collecting wiring end 17b of the current collecting wiring 17 is connected to a position outside the sealing portion 60 on the electrode 12A.
  • the counter substrate 50 includes a metal substrate 51 that serves as a substrate and an electrode, and a catalyst layer 52 that is provided on the electrode 12 ⁇ / b> A side of the metal substrate 51 and contributes to the reduction of the electrolyte 80.
  • connection terminal 16 and the metal substrate 51 are connected by a conductive member 90.
  • the conductive member 90 has a main body portion 90a and at least one (three in the figure) wiring portions 90b that connect the main body portion 90a and the connection terminal 16.
  • the insulating layer 70 is an inner insulating layer inside the outer peripheral edge 70 c of the sealing portion 60 when the photoelectric conversion element 100 is viewed in the direction Y orthogonal to the cell installation surface 11 b of the transparent substrate 11. 70 a and an outer insulating layer 70 b outside the outer peripheral edge 70 c of the sealing portion 60.
  • the inner insulating layer 70 a is provided in contact with the oxide semiconductor layer 13. That is, the inner insulating layer 70a suppresses intrusion of moisture from the groove 40 into the photoelectric conversion cell 20, so that not only the groove 40 but also the oxide semiconductor layer of the electrode 12A inside the outer peripheral edge 70c of the sealing portion 60 is provided.
  • the entire region except the region where 13 is provided is also covered.
  • the inner insulating layer 70 a enters the groove 40 in a portion where it overlaps with the groove 40 in order to more sufficiently suppress the intrusion of moisture from the groove 40 into the photoelectric conversion cell 20.
  • the outer insulating layer 70b includes a connection terminal-external connection terminal region 101 between the first external connection terminal 15a and the connection terminal 16 in the transparent conductive layer 12, and the second external connection terminal 15b and the first current collector. It is provided so as to cover an area other than the area 102 between the wiring end 17a and the wiring-external connection terminal.
  • the region 103 between the external connection terminals between the first external connection terminal 15a and the second external connection terminal 15b in the region outside the sealing portion 60 on the cell installation surface 11b of the transparent substrate 11 is the insulating layer 70.
  • the outer insulating layer 70b is covered with the outer insulating layer 70b.
  • the region 104 between the connection terminal 16 and the first current collector wiring end 17 a in the region outside the sealing portion 60 on the cell installation surface 11 b of the transparent substrate 11 is also outside the insulating layer 70. It is covered with an insulating layer 70b.
  • the protective layer 30 covers not only the photoelectric conversion cell 20 but also the region on the transparent substrate 11 other than the first external connection terminal 15 a and the second external connection terminal 15 b. Covering. That is, the protective layer 30 includes the outer insulating layer 70b of the insulating layer 70, the connection terminal-external connection terminal region 101, the wiring-external connection terminal region 102, the external connection terminal region 103, and the wiring-connection terminal region. 104 is also covered. Moreover, the unevenness
  • the photoelectric conversion element 100 when the photoelectric conversion element 100 is viewed in the direction Y perpendicular to the cell installation surface 11 b of the transparent substrate 11, the unevenness 31 is formed on the entire surface 30 a opposite to the transparent substrate 11 of the protective layer 30. Has been. Therefore, irregularities 31 are formed at least in a portion where the protective layer 30 and the counter substrate 50 of the photoelectric conversion cell 20 overlap. For this reason, a surface area becomes large in the whole surface 30a on the opposite side of the transparent substrate 11 of the protective layer 30. Therefore, even when the ambient temperature decreases from a high temperature state, it becomes possible to effectively release the heat of the photoelectric conversion cell 20 from the protective layer 30, and quickly recover the decrease in output due to the temperature increase of the photoelectric conversion cell 20. It becomes possible to do. Therefore, according to the photoelectric conversion element 100, the recoverability of the photoelectric conversion characteristics can be improved when the ambient temperature decreases from the high temperature state.
  • the protective layer 30 is in close contact with the metal substrate 51 of the counter substrate 50. That is, there is no air layer between the protective layer 30 and the counter substrate 50. For this reason, compared with the case where the protective layer 30 and the opposing board
  • the protective layer 30 is in close contact with the metal substrate 51 having a high thermal conductivity, the heat of the photoelectric conversion cell 20 is higher than that in the case where the protective layer 30 is in close contact with the insulating layer having a relatively low thermal conductivity. Can be transmitted to the protective layer 30 more effectively, and when the ambient temperature falls from a high temperature state, the recovery property of the photoelectric conversion characteristics can be more sufficiently improved.
  • the transparent substrate 11, the transparent conductive layer 12, the oxide semiconductor layer 13, the first external connection terminal 15a, the second external connection terminal 15b, the connection terminal 16, the current collector wiring 17, the dye, the protective layer 30, and the counter substrate 50 The sealing part 60, the insulating layer 70, the electrolyte 80, and the conductive member 90 will be described in detail.
  • the material which comprises the transparent substrate 11 should just be a transparent material, for example, as such a transparent material, glass, such as borosilicate glass, soda lime glass, white plate glass, quartz glass, polyethylene terephthalate (PET), for example , Polyethylene naphthalate (PEN), polycarbonate (PC), and polyethersulfone (PES).
  • PET polyethylene terephthalate
  • PEN Polyethylene naphthalate
  • PC polycarbonate
  • PES polyethersulfone
  • the thickness of the transparent substrate 11 is appropriately determined according to the size of the photoelectric conversion element 100 and is not particularly limited, but may be in the range of 0.05 to 10 mm, for example.
  • Transparent conductive layer examples of the material contained in the transparent conductive layer 12 include conductive metal oxides such as tin-added indium oxide (ITO), tin oxide (SnO 2 ), and fluorine-added tin oxide (FTO).
  • the transparent conductive layer 12 may be a single layer or a laminate of a plurality of layers containing different conductive metal oxides. When the transparent conductive layer 12 is composed of a single layer, the transparent conductive layer 12 preferably includes FTO because it has high heat resistance and chemical resistance.
  • the transparent conductive layer 12 may further include a glass frit.
  • the thickness of the transparent conductive layer 12 may be in the range of 0.01 to 2 ⁇ m, for example.
  • the oxide semiconductor layer 13 is composed of oxide semiconductor particles.
  • the oxide semiconductor particles include titanium oxide (TiO 2 ), silicon oxide (SiO 2 ), zinc oxide (ZnO), tungsten oxide (WO 3 ), niobium oxide (Nb 2 O 5 ), and strontium titanate (SrTiO 3 ).
  • the oxide semiconductor layer 13 is usually composed of an absorption layer for absorbing light, but may be composed of an absorption layer and a reflection layer that reflects light transmitted through the absorption layer and returns it to the absorption layer.
  • the thickness of the oxide semiconductor layer 13 is not particularly limited, but is usually 0.5 to 50 ⁇ m.
  • the first external connection terminal 15a and the second external connection terminal 15b include a metal material.
  • the metal material include silver, copper, and indium. You may use these individually or in combination of 2 or more types.
  • the 1st external connection terminal 15a and the 2nd external connection terminal 15b are comprised by the sintered compact which consists only of metal materials, for example.
  • connection terminal 16 includes a metal material.
  • the connection terminal 16 may be made of the same material as the first external connection terminal 15a and the second external connection terminal 15b or may be made of a different material, but is preferably made of the same material.
  • the current collection wiring 17 contains a metal material.
  • the current collecting wiring 17 may be made of the same material as the first external connection terminal 15a and the second external connection terminal 15b or may be made of a different material, but is preferably made of the same material.
  • the dye examples include photosensitizing dyes such as ruthenium complexes having a ligand containing a bipyridine structure, a terpyridine structure, etc., organic dyes such as porphyrin, eosin, rhodamine and merocyanine, and organic-types such as lead halide perovskite crystals.
  • photosensitizing dyes such as ruthenium complexes having a ligand containing a bipyridine structure, a terpyridine structure, etc.
  • organic dyes such as porphyrin, eosin, rhodamine and merocyanine
  • organic-types such as lead halide perovskite crystals.
  • examples include inorganic composite dyes.
  • the photoelectric conversion element 100 becomes a dye-sensitized photoelectric conversion element
  • a photosensitizing dye comprising a ruthenium complex having a ligand containing a bipyridine structure or a terpyridine structure is preferable.
  • the photoelectric conversion characteristics of the photoelectric conversion element 100 can be further improved.
  • the unevenness 31 is formed on the surface 30a of the protective layer 30 opposite to the transparent substrate 11.
  • the degree of unevenness of the unevenness 31 of the protective layer 30 is not particularly limited, but the unevenness 31 is preferably an unevenness having an arithmetic average roughness Ra of 0.2 ⁇ m or more. In this case, the surface area becomes wider as compared with the case where the irregularities 31 are irregularities having an arithmetic average roughness Ra of less than 0.2 ⁇ m. Therefore, even when the ambient temperature decreases from a high temperature state, the heat of the photoelectric conversion cell 20 can be more effectively released from the protective layer 30, and the output decrease due to the temperature increase of the photoelectric conversion cell 20 can be promptly performed. It becomes possible to recover. Therefore, according to the photoelectric conversion element 100, the recoverability of the photoelectric conversion characteristics can be further improved when the ambient temperature decreases from the high temperature state.
  • the irregularities 31 are more preferably irregularities having an arithmetic average roughness Ra of 0.3 ⁇ m or more. In this case, it becomes easier for the protective layer 30 to radiate heat, and it becomes possible to more quickly recover the decrease in output due to the temperature increase of the photoelectric conversion cell 20.
  • the irregularities 31 are preferably irregularities having an arithmetic average roughness Ra of 15 ⁇ m or less.
  • the photoelectric conversion element 100 is incorporated in a housing (not shown), and the housing and the photoelectric conversion element 100 are protected.
  • the contact area between the housing and the protective layer 30 of the photoelectric conversion element 100 becomes larger. For this reason, it becomes possible to discharge
  • the irregularities 31 are more preferably irregularities having an arithmetic average roughness Ra of 10 ⁇ m or less.
  • the unevenness 31 may be formed by regularly arranging at least one of a recess having the same depth and a protrusion having the same height. it can. In this case, the surface area can be increased, and the heat generated in the photoelectric conversion cell 20 can be released more effectively.
  • the protective layer 30 usually has a layer (resin layer) made of a resin material (insulating material) on the transparent substrate 11 side.
  • the protective layer 30 may be composed of, for example, at least one layer (resin layer) made of a resin material, or a laminate including a resin layer and a layer (metal layer) made of a metal material. Also good.
  • the resin material include polyimide resin, epoxy resin, polyurethane resin, and polyethylene terephthalate (PET) resin.
  • polyimide resin is preferred.
  • the resin layer includes a polyimide resin having excellent insulating properties, more excellent insulating properties can be imparted to the protective layer 30.
  • the polyimide resin has a smaller linear expansion coefficient than the insulating plastic material other than the polyimide resin, the linear expansion coefficient of the resin layer is also smaller than that of the insulating plastic material other than the polyimide resin.
  • the metal substrate 51 included in the counter substrate 50 also has a smaller linear expansion coefficient than the insulating plastic material other than the polyimide resin.
  • the resin layer easily follows the metal substrate 51 even in an environment where the temperature change is large, the shear stress applied between the resin layer and the metal substrate 51 can be reduced, and the resin layer is made of metal. Separation from the substrate 51 is sufficiently suppressed. Furthermore, since the polyimide resin has a lower dielectric constant than the metal layer, the protective layer 30 short-circuits the metal substrate 51 of the counter substrate 50 and the electrode 12A unlike the case where a metal layer is used instead of the resin layer. Can be more sufficiently suppressed.
  • the resin layer of the protective layer 30 may be in close contact with the conductive member 90 connected to the metal substrate 51 as shown in FIG.
  • the conductive member 90 also has a smaller linear expansion coefficient than the insulating plastic material other than the polyimide resin, like the metal substrate 51 included in the counter substrate 50. For this reason, even in an environment with a large temperature change, the resin layer easily follows the conductive member 90, and the conductive member 90 is sufficiently suppressed from being pulled and cut by the resin layer.
  • examples of the metal material include aluminum and stainless steel.
  • the protective layer 30 is in direct contact with the metal substrate 51 of the counter substrate 50 in FIG. 2, the protective layer 30 may be in intimate contact with the metal substrate 51 of the counter substrate 50 via an adhesive. .
  • the color of the protective layer 30 is not particularly limited, but is preferably black. In this case, heat radiation becomes particularly large, and heat generated in the photoelectric conversion cell 20 is easily released, so that the protective layer 30 can release heat more effectively. Therefore, according to the photoelectric conversion element 100, the recoverability of the photoelectric conversion characteristics can be further improved when the ambient temperature decreases from the high temperature state.
  • the thickness of the protective layer 30 is not particularly limited, but is preferably 30 to 300 ⁇ m. In this case, the heat resistance of the protective layer 30 becomes higher.
  • the counter substrate 50 includes the metal substrate 51 serving as a substrate and an electrode, and the catalyst layer 52.
  • the metal substrate 51 should just be comprised with a metal, it is preferable that this metal is a metal which can form a passive state. In this case, since the metal substrate 51 is less likely to be corroded by the electrolyte 80, the photoelectric conversion element 100 can have more excellent durability.
  • the metal capable of forming a passive material include titanium, nickel, molybdenum, tungsten, aluminum, stainless steel, and alloys thereof.
  • the thickness of the metal substrate 51 is appropriately determined according to the size of the photoelectric conversion element 100 and is not particularly limited, but may be, for example, 0.005 to 0.1 mm.
  • the catalyst layer 52 is composed of platinum, a carbon-based material, a conductive polymer, or the like.
  • carbon black and carbon nanotubes are preferably used as the carbon-based material.
  • the material constituting the sealing portion 60 examples include an ionomer, an ethylene-vinyl acetate anhydride copolymer, an ethylene-methacrylic acid copolymer, an ethylene-vinyl alcohol copolymer, a modified polyolefin resin, an ultraviolet curable resin, And resin, such as a vinyl alcohol polymer, is mentioned. These resins can be used alone or in combination of two or more.
  • the thickness of the sealing part 60 is not particularly limited, but is usually 10 to 50 ⁇ m, preferably 20 to 40 ⁇ m. In this case, the penetration of water into the inside of the sealing portion 60 can be more sufficiently suppressed.
  • the insulating layer 70 only needs to be made of an insulating material.
  • an insulating material include a resin and an inorganic insulating material, and among them, an inorganic insulating material is preferable.
  • the insulating layer 70 covers not only the groove 40 inside the outer peripheral edge 70c of the sealing portion 60 but also the entire region excluding the region where the oxide semiconductor layer 13 is provided in the electrode 12A. Since the material has a higher sealing ability than the resin, the intrusion of moisture from the groove 40 can be more sufficiently suppressed.
  • An example of such an inorganic insulating material is glass.
  • the insulating material constituting the insulating layer 70 is preferably colored. In this case, when the photoelectric conversion element 100 is viewed from the light receiving surface 11a side, it is possible to sufficiently suppress the counter substrate 50 from being noticeable. For this reason, a favorable external appearance can be realized. Moreover, since it is not necessary to color electrode 12A, the fall of the photoelectric conversion characteristic of the photoelectric conversion element 100 can fully be suppressed.
  • the colored insulating material for example, an inorganic insulating material such as colored glass is used.
  • the color of the insulating layer 70 is not particularly limited, and various colors can be used according to the purpose.
  • the thickness of the insulating layer 70 is not particularly limited, but is usually 10 to 30 ⁇ m, preferably 15 to 25 ⁇ m.
  • the electrolyte 80 includes a redox couple and an organic solvent.
  • organic solvent acetonitrile, methoxyacetonitrile, methoxypropionitrile, propionitrile, ethylene carbonate, propylene carbonate, diethyl carbonate, ⁇ -butyrolactone, valeronitrile, pivalonitrile and the like can be used.
  • the redox pair include iodide ions / polyiodide ions (for example, I ⁇ / I 3 ⁇ ), and redox pairs such as bromide ions (bromine ions) / polybromide ions, zinc complexes, iron complexes, and cobalt complexes.
  • the iodide ion / polyiodide ion can be formed by iodine (I 2 ) and a salt (ionic liquid or solid salt) containing iodide (I ⁇ ) as an anion.
  • iodine I 2
  • a salt ionic liquid or solid salt
  • I ⁇ iodide
  • an anion such as LiI or tetrabutylammonium iodide is used.
  • a salt containing iodide (I ⁇ ) may be added.
  • the electrolyte 80 may be an ionic liquid instead of an organic solvent.
  • the ionic liquid for example, a known iodine salt such as a pyridinium salt, an imidazolium salt, or a triazolium salt, and a room temperature molten salt that is in a molten state near room temperature is used.
  • room temperature molten salts include 1-hexyl-3-methylimidazolium iodide, 1-ethyl-3-propylimidazolium iodide, dimethylimidazolium iodide, ethylmethylimidazolium iodide, and dimethylpropyl.
  • Imidazolium iodide, butylmethylimidazolium iodide, or methylpropyl imidazolium iodide is preferably used.
  • the electrolyte 80 may be a mixture of the ionic liquid and the organic solvent instead of the organic solvent.
  • An additive can be added to the electrolyte 80.
  • the additive include LiI, I 2 , 4-t-butylpyridine, guanidinium thiocyanate, 1-methylbenzimidazole, 1-butylbenzimidazole and the like.
  • a nanocomposite gel electrolyte which is a pseudo-solid electrolyte obtained by kneading nanoparticles such as SiO 2 , TiO 2 , and carbon nanotubes with the electrolyte, may be used, or polyvinylidene fluoride.
  • an electrolyte gelled with an organic gelling agent such as a polyethylene oxide derivative or an amino acid derivative may be used.
  • Electrolyte 80 preferably includes an oxidation-reduction pair consisting of iodide ions / polyiodide ions (for example, I ⁇ / I 3 ⁇ ), and the concentration of polyiodide ions is preferably 0.006 mol / liter or less.
  • the concentration of polyiodide ions that carry electrons is low, the leakage current can be further reduced. For this reason, since an open circuit voltage can be increased more, a photoelectric conversion characteristic can be improved more.
  • the concentration of polyiodide ions is preferably 0.005 mol / liter or less, more preferably 0 to 6 ⁇ 10 ⁇ 6 mol / liter, and 0 to 6 ⁇ 10 ⁇ 8 mol / liter. Is more preferable.
  • the color of the electrolyte 80 can be made inconspicuous.
  • the conductive member 90 includes a metal material.
  • the metal material for example, silver or copper can be used.
  • the conductive member 90 may further include a binder resin in addition to the metal material.
  • the binder resin include an epoxy resin, a polyester resin, and an acrylic resin. Of these, epoxy resins and polyester resins are preferred because they are less likely to thermally expand even at high temperatures and the resistance change with time can be further reduced.
  • the conductive member 90 includes the main body portion 90a and the wiring portion 90b.
  • the main body portion 90a of the conductive member 90 may be formed of a laminate having a first layer directly connected to the metal substrate 51 and a second layer provided on the first layer.
  • the first layer includes a metal material, a binder resin, and carbon
  • the second layer includes a metal material and a binder resin
  • the carbon content in the first layer is the carbon content in the second layer. It is preferable that it is larger than the rate. In this case, the conductive member 90 is difficult to peel from the metal substrate 51.
  • FIG. 6 is a cross-sectional view showing a structure obtained in the middle of the method for manufacturing the photoelectric conversion element of FIG.
  • a laminate formed by forming a transparent conductive film on the cell installation surface 11b of one transparent substrate 11 is prepared.
  • the transparent conductive film As a method for forming the transparent conductive film, sputtering, vapor deposition, spray pyrolysis, CVD, or the like is used.
  • the groove 40 is formed in the transparent conductive film, and the transparent conductive layer 12 is formed.
  • the transparent conductive layer 12 is formed such that the electrode 12A, the first current extraction unit 12B, the separation unit 12C, and the second current extraction unit 12D are formed.
  • the groove 40 can be formed by a laser scribing method using, for example, a YAG laser or a CO 2 laser as a light source.
  • a precursor of the first external connection terminal 15a and a precursor of the connection terminal 16 are formed on the first current extraction portion 12B.
  • the precursor of the first external connection terminal 15a and the precursor of the connection terminal 16 can be formed, for example, by applying a silver paste and drying.
  • a precursor of the second external connection terminal 15b is formed on the second current extraction portion 12D.
  • the precursor of the second external connection terminal 15b can be formed, for example, by applying a silver paste and drying it.
  • the precursor of the current collecting wiring 17 is formed so as to straddle the electrode 12A and the second current extraction portion 12D. At this time, one end of the current collecting wiring 17 is disposed on the second current extraction portion 12D at a position separated from the precursor of the second external connection terminal 15b, and the other end is disposed on the electrode 12A. It is formed to be arranged.
  • the precursor of the current collecting wiring 17 can be formed, for example, by applying a silver paste and drying it.
  • a region where the oxide semiconductor layer 13 is to be formed (hereinafter referred to as "semiconductor layer formation planned region"), a region 101 between the connection terminal and the external connection terminal, and a wiring and the outside
  • the precursor of the insulating layer 70 is formed so as to cover a region other than the connection terminal region 102. At this time, the precursor of the insulating layer 70 is formed so that the precursor of the insulating layer 70 enters the groove 40.
  • the precursor of the insulating layer 70 can be formed, for example, by applying and drying a paste containing an inorganic insulating material.
  • the precursor of the first external connection terminal 15a, the precursor of the second external connection terminal 15b, the precursor of the connection terminal 16, the precursor of the current collecting wiring 17, and the precursor of the insulating layer 70 are baked together.
  • the first external connection terminal 15a, the second external connection terminal 15b, the connection terminal 16, the current collecting wiring 17 and the insulating layer 70 are formed.
  • the firing temperature varies depending on the type of insulating material, etc., it is usually 350 to 600 ° C., and the firing time also varies depending on the type of insulating material, but is usually 1 to 5 hours.
  • a precursor of the oxide semiconductor layer 13 is formed on the semiconductor layer formation scheduled region of the electrode 12A.
  • the precursor of the oxide semiconductor layer 13 is obtained by printing and drying an oxide semiconductor layer paste for forming the oxide semiconductor layer 13.
  • the oxide semiconductor layer paste includes, for example, titanium oxide, a resin such as polyethylene glycol and ethyl cellulose, and a solvent such as terpineol.
  • a method for printing the oxide semiconductor layer paste for example, a screen printing method, a doctor blade method, a bar coating method, or the like can be used.
  • the precursor of the oxide semiconductor layer 13 is baked to form the oxide semiconductor layer 13.
  • the firing temperature varies depending on the type of oxide semiconductor particles, etc., it is usually 350 to 600 ° C., and the firing time also varies depending on the type of oxide semiconductor particles, but is usually 1 to 5 hours.
  • the sealing part forming body can be obtained, for example, by preparing one sealing resin film made of a material constituting the sealing part 60 and forming an opening in the sealing resin film.
  • this sealing part formation body is adhere
  • the sealing portion forming body is bonded to the structure A so as to overlap with the insulating layer 70 and the oxide semiconductor layer 13 is disposed inside. Adhesion of the sealing portion forming body to the structure A can be performed by, for example, heating and melting the sealing portion forming body.
  • a dye is supported on the oxide semiconductor layer 13 of the structure A.
  • the structure A is immersed in a dye solution containing a dye, the dye is adsorbed on the oxide semiconductor layer 13, and then the excess dye is washed away with the solvent component of the solution and dried. Just do it.
  • the electrolyte 80 is disposed on the oxide semiconductor layer 13.
  • the counter substrate 50 can be obtained, for example, by forming a conductive catalyst layer 52 on the metal substrate 51.
  • the sealing portion forming body bonded to the counter substrate 50 and the sealing portion forming body bonded to the structure A in which the electrolyte 80 is arranged are overlapped, and the sealing portion forming body is heated and melted while being pressurized. .
  • the sealing portion 60 is formed between the transparent substrate 11 and the counter substrate 50 of the structure A.
  • the formation of the sealing portion 60 may be performed under atmospheric pressure or under reduced pressure, but is preferably performed under reduced pressure.
  • the connection terminal 16 and the metal substrate 51 of the counter substrate 50 are connected by the conductive member 90.
  • the conductive member 90 prepares a paste containing a metal material constituting the conductive member 90, and applies and cures this paste so as to connect the metal substrate 51 of the counter substrate 50 and the connection terminal 16.
  • the paste it is preferable to use a low-temperature curable paste that can be cured at a temperature of 90 ° C. or lower from the viewpoint of avoiding adverse effects on the dye supported on the oxide semiconductor layer 13.
  • the protective layer 30 is formed.
  • the protective layer 30 can be obtained, for example, by forming the protective layer 30 and applying and heating a paste containing a resin material. At this time, the degree of the unevenness 31 can be adjusted by appropriately changing the mixing ratio of components (for example, matting agent) in the paste. Or after preparing the precursor of the protective layer 30, forming the unevenness
  • the peripheral edge portion 30A of the precursor is adhered to the outer insulating layer 70b of the insulating layer 70, and the protective layer 30 and the counter substrate 50 are brought into close contact with each other.
  • the precursor of the protective layer 30 is formed so as to cover not only the photoelectric conversion cell 20 but also the region on the transparent substrate 11 other than the first external connection terminal 15a and the second external connection terminal 15b.
  • the protective layer 30 includes not only the photoelectric conversion cell 20 but also the outer insulating layer 70b of the insulating layer 70, the connection terminal-external connection terminal region 101, the wiring-external connection terminal region 102, the external connection terminal region 103, Further, the wiring-connection terminal region 104 is also formed so as to cover it.
  • the photoelectric conversion element 100 is obtained as described above (see FIG. 1).
  • the present invention is not limited to the above embodiment.
  • the unevenness 31 is formed on the entire surface 30a opposite to the transparent substrate 11 of the protective layer 30, but the unevenness 31 is not necessarily formed on the surface 30a opposite to the transparent substrate 11 of the protective layer 30. It does not have to be formed entirely.
  • the protective layer 30 is viewed in the direction Y orthogonal to the cell placement surface 11b of the transparent substrate 11, the unevenness 31 is formed on the surface 30a of the protective layer 30 opposite to the transparent substrate 11 and the protective layer 30 and the counter substrate 50. Should just be formed at least in the overlapping part.
  • the protective layer 30 and the counter substrate 50 are in close contact, but the protective layer 30 and the counter substrate 50 do not necessarily have to be in close contact. That is, the protective layer 30 and the counter substrate 50 may be separated from each other. In other words, an air layer may be provided between the protective layer 30 and the counter substrate 50.
  • the protective layer 30 is not limited to the photoelectric conversion cell 20, but the outer insulating layer 70b of the insulating layer 70, the connection terminal-external connection terminal region 101, the wiring-external connection terminal region 102, the external connection.
  • the inter-terminal region 103 and the wiring-connection terminal region 104 are also covered, but the portions other than the photoelectric conversion cell 20 may not be covered.
  • the outer insulating layer 70b of the insulating layer 70 includes the connection terminal-external connection terminal region 101 in the transparent conductive layer 12 between the sealing portion 60 and the peripheral portion of the transparent substrate 11, and The area other than the area 102 between the wiring and the external connection terminals is provided so as to cover the area, but the area 101 between the connection terminals and the external connection terminals and the area 102 between the wiring and the external connection terminals may also be covered. .
  • the insulating layer 70 covers the entire region of the electrode 12A excluding the region where the oxide semiconductor layer 13 is provided inside the outer peripheral edge 70c of the sealing portion 60. 70 may cover only a part of the electrode 12 ⁇ / b> A inside the outer peripheral edge 70 c of the sealing portion 60. Moreover, in the said embodiment, although the insulating layer 70 is comprised by the inner side insulating layer 70a and the outer side insulating layer 70b, the insulating layer 70 may be comprised only by the inner side insulating layer 70a.
  • the photoelectric conversion element 100 has the insulating layer 70, it does not need to have the insulating layer 70.
  • FIG. 1 is a diagrammatic representation of the photoelectric conversion element 100.
  • the photoelectric conversion element 100 has the current collection wiring 17.
  • the photoelectric conversion element of the present invention does not necessarily have the current collection wiring 17.
  • the counter substrate 50 includes the metal substrate 51 serving as both a substrate and an electrode.
  • the counter substrate 50 may include a conductive substrate instead of the metal substrate 51.
  • the conductive substrate may be composed of a transparent substrate 11 and an electrode provided between the transparent substrate 11 and the catalyst 22 by separating the substrate and the electrode.
  • the electrode is made of a conductive oxide such as ITO or FTO.
  • the counter substrate 50 includes the metal substrate 51 and the catalyst layer 52.
  • the counter substrate 50 may be formed of an insulating substrate.
  • a laminate composed of the oxide semiconductor layer 13, the porous insulating layer impregnated with the electrolyte 80, and the counter electrode is sequentially provided between the electrode 12A and the counter substrate 50 from the electrode 12A side. It is done.
  • the separation part 12C is provided on the transparent substrate 11 so as to surround the electrode 12A and the second current extraction part 12B, but the separation part 12C is not provided on the transparent substrate 11. Also good.
  • the photoelectric conversion cell 20 is provided on the transparent substrate 11, but in the photoelectric conversion element 100, a plurality of photoelectric conversion cells 20 may be provided on the transparent substrate 11.
  • at least the unevenness 31 needs to be formed in a portion of the surface 30 a opposite to the transparent substrate 11 of the protective layer 30 that overlaps the counter substrate 50 of the plurality of photoelectric conversion cells 20.
  • the several photoelectric conversion cell 20 may be connected in series, and may be connected in parallel.
  • Example 1 First, a laminate was prepared by forming a transparent conductive film made of FTO having a thickness of 0.7 ⁇ m on a transparent substrate made of alkali-free glass and having a size of 112 mm ⁇ 56 mm and a thickness of 2.2 mm. Next, as shown in FIG. 3, a groove 40 was formed in the transparent conductive film by a YAG laser, and the transparent conductive layer 12 was formed. At this time, the transparent conductive layer 12 was formed such that the electrode 12A, the first current extraction unit 12B, the separation unit 12C, and the second current extraction unit 12D were formed. At this time, the width of the groove 40 was set to 0.1 mm.
  • the electrode 12A was formed to have a square shape of 54.4 mm ⁇ 104.5 mm, and the second current extraction portion 12D was formed to extend from one side of the electrode 12A to have a square shape.
  • the length in the extending direction of the second current extraction portion 12D was 4.3 mm, and the width of the second current extraction portion 12D was 27.2 mm.
  • the first current extraction portion 12B was formed to have a size of 27.2 mm ⁇ 4.3 mm.
  • the precursor of the first external connection terminal 15a and the precursor of the connection terminal 16 were formed in a rectangular shape and spaced apart from each other on the first current extraction portion 12B. At this time, the precursor of the first external connection terminal 15a was formed to have a size of 8 mm ⁇ 1.8 mm, and the precursor of the connection terminal 16 was formed to have a size of 8 mm ⁇ 0.3 mm.
  • a precursor of the second external connection terminal 15b was formed in a rectangular shape on the second current extraction portion 12D. At this time, the precursor of the second external connection terminal 15b was formed to have a size of 8 mm ⁇ 1.8 mm.
  • the current collection wiring 17 was formed so as to straddle the second current extraction part 12D and the electrode 12A. At this time, one end of the precursor of the current collector wiring 17 is disposed on the second current extraction portion 12D at a position separated from the precursor of the second external connection terminal 15b, and the other end is on the electrode 12A. It was formed so as to be arranged at the position.
  • the current collector wiring precursor has an L-shape and a portion having a width of 0.3 mm ⁇ a length of 21.6 mm and a portion having a width of 0.3 mm ⁇ a length of 105.1 mm. Formed.
  • the precursor of the connection terminal 16, the precursor of the first external connection terminal 15a, the precursor of the second external connection terminal 15b, and the precursor of the current collector wiring 17 are all formed by applying a silver paste and drying. did.
  • the precursor of the insulating layer 70 so as to cover the region other than the region where the semiconductor layer is to be formed, the region 101 between the connection terminal and the external connection terminal, and the region 102 between the wiring and the external connection terminal Formed.
  • the precursor of the insulating layer 70 was formed so as to enter the groove 40.
  • the precursor of the insulating layer 70 was formed by applying and drying a paste containing glass frit (trade name “PLFOC-837B”, manufactured by Okuno Pharmaceutical Co., Ltd.).
  • the precursor of the first external connection terminal 15a, the precursor of the second external connection terminal 15b, the precursor of the connection terminal 16, the precursor of the current collecting wiring 17, and the precursor of the insulating layer 70 are baked together.
  • the first external connection terminal 15a, the second external connection terminal 15b, the connection terminal 16, the current collector wiring 17, and the insulating layer 70 were formed.
  • the firing temperature was 500 ° C.
  • the firing time was 1 hour.
  • the distance L between the first external connection terminal 15a and the connection terminal 16 was 0.5 mm.
  • the distance L ′ between the second external connection terminal 15b and the first current collector wiring end 17a was 0.5 mm.
  • a precursor of the oxide semiconductor layer 13 was formed on the semiconductor layer formation scheduled region of the electrode 12A.
  • the precursor of the oxide semiconductor layer 13 was obtained by applying a paste containing titanium oxide so as to fill the inside of the insulating layer 70 by screen printing and drying at 150 ° C. for 10 minutes.
  • the precursor of the oxide semiconductor layer 13 was fired to form the oxide semiconductor layer 13.
  • the firing temperature was 500 ° C.
  • the firing time was 1 hour.
  • the sealing part forming body is prepared by preparing a sealing resin film made of 51.2 mm ⁇ 106.1 mm ⁇ 35 ⁇ m maleic anhydride-modified polyethylene (trade name “Binell”, manufactured by DuPont). It was obtained by forming one rectangular opening of 47.2 mm ⁇ 102.1 mm in the resin film for use.
  • this sealing part formation body was piled up on structure A, it was made to adhere to insulating layer 70 on structure A by heating and melting the sealing part formation body. At this time, the sealing portion formation body was adhered to the structure A so as to overlap the insulating layer 70 and to be disposed between the oxide semiconductor layer 13, the connection terminal 16, and the current collector wiring 17.
  • the structure A obtained as described above is mixed by containing 0.2 mM of a photosensitizing dye composed of Z907, mixing a solvent with acetonitrile and tert-butanol at a volume ratio of 1: 1. After being immersed in a dye solution as a solvent for a whole day and night, it was taken out and dried, and a photosensitizing dye was supported on the oxide semiconductor layer.
  • an electrolyte 80 obtained by adding I 2 , methylbenzimidazole, butylbenzimidazole, guanidinium thiocyanate and t-butylpyridine was prepared.
  • the electrolyte 80 was dropped onto the oxide semiconductor layer 13, applied, and dried to place the electrolyte 80.
  • the counter substrate 50 was prepared by forming a catalyst layer made of platinum having a thickness of 5 nm on a 51.2 mm ⁇ 106.1 mm ⁇ 40 ⁇ m titanium foil by sputtering.
  • another sealing part forming body was prepared. And the opposing board
  • positioned are piled up under reduced pressure, and it heats, pressurizing a sealing part formation body Melted.
  • a sealing portion was formed between the structure A and the counter substrate.
  • the thickness of the sealing part was 40 ⁇ m, and the width of the sealing part was 2 mm.
  • connection terminal 16 and the metal substrate 51 of the counter substrate 50 were connected by the conductive member 90 as follows.
  • silver particles (average particle size: 3.5 ⁇ m), carbon (average particle size: 500 nm), and polyester resin were dispersed in a solvent composed of diethylene glycol monoethyl ether acetate to prepare a first conductive paste.
  • the silver particles, carbon, polyester resin, and solvent were mixed at a mass ratio of 70: 1: 10: 19.
  • silver particles (average particle size: 2 ⁇ m) and polyester resin were dispersed in a solvent composed of ethylene glycol monobutyl ether to prepare a second conductive paste.
  • the silver particles, the polyester resin, and the solvent were mixed at a mass ratio of 65:10:25.
  • the said 1st conductive paste was apply
  • the main body 90a is formed to have a size of 41.2 mm ⁇ 4.5 mm ⁇ thickness 60 ⁇ m, and the three wiring portions 90b each have a size of 2 mm ⁇ 4.7 mm ⁇ thickness 30 mm. Formed as follows.
  • thermocouple (trade name “Super Extrafine-005-K”, manufactured by Ninomiya Electric Cable Co., Ltd.) was attached to the metal substrate 51 of the counter substrate 50.
  • a matte agent (trade name “Techpolymer”, manufactured by Sekisui Chemical Co., Ltd.) is added to a paint containing acrylic urethane resin (trade name “RECRACK 110”, manufactured by Fujikura Kasei Co., Ltd.) with an arithmetic average roughness Ra of 0.
  • a paste mixed at a mixing ratio of 0.7 ⁇ m was prepared, and this paste was applied so as to cover the photoelectric conversion cell 20 to form a precursor of the protective layer 30.
  • the precursor of the protective layer 30 was formed so as to cover the ultrafine thermocouple.
  • corrugation 31 was formed in the whole surface 30a on the opposite side to the transparent substrate 11 among the precursors of the protective layer 30 by heating in 80 degreeC oven for 30 minutes.
  • the protective layer 30 was formed so as to cover not only the photoelectric conversion cell 20 but also the region on the transparent substrate 11 other than the first external connection terminal 15a and the second external connection terminal 15b. That is, the protective layer 30 includes not only the photoelectric conversion cell 20 but also the outer insulating layer 70b of the insulating layer 70, the connection terminal-external connection terminal region 101, the wiring-external connection terminal region 102, the external connection terminal region 103, In addition, the wiring-connection terminal region 104 is also formed so as to cover it.
  • the photoelectric conversion element 100 was obtained as described above.
  • Example 1 except that the paste was prepared by mixing the matting agent with the blending ratio of arithmetic average roughness Ra as shown in Table 1 and the protective layer 30 was formed using the paste. Similarly, a photoelectric conversion element was produced.
  • Example 4 A back sheet (total thickness: 88 ⁇ m) composed of a laminate of a first resin layer made of acrylic urethane resin having a thickness of 20 ⁇ m, an aluminum foil having a thickness of 30 ⁇ m, and a second resin layer having a thickness of 38 ⁇ m made of polyethylene terephthalate.
  • a photoelectric conversion element was produced in the same manner as in Example 1 except that an air layer having a thickness of 2 mm was provided between the protective layer 30 and the counter substrate 50 as a protective layer.
  • the first resin layer is prepared by preparing a paste in which the matting agent is mixed with the paint at a mixing ratio such that the arithmetic average roughness Ra is as shown in Table 2, and the paste is 30 in an oven at 80 ° C. It was prepared by forming the irregularities 31 on the entire surface 30a opposite to the aluminum foil of the first resin layer by partial heating.
  • Examples 5 to 6 and Comparative Example 2 The same as in Example 4 except that the first resin layer of the back sheet was formed using a paste in which the matting agent was mixed with the coating material at a mixing ratio such that the arithmetic average roughness Ra is as shown in Table 2. Thus, a photoelectric conversion element was produced.
  • Example 7 As a protective layer, a laminate of a first resin layer made of acrylic urethane resin having a thickness of 20 ⁇ m and a second resin layer made of polyimide film having a thickness of 50 ⁇ m (linear expansion coefficient: 27 ppm / ° C.) was used. The acrylic adhesive is adhered so as to cover regions other than the first external connection terminal 15a and the second external connection terminal 15b in the regions on the photoelectric conversion cell 20 and the transparent substrate 11, and is opposite to the transparent substrate of the protective layer.
  • a photoelectric conversion element was produced in the same manner as in Example 1 except that irregularities were formed on the entire surface and the arithmetic average roughness Ra on the surface was set to the values shown in Table 3.
  • Example 8 A first resin layer made of acrylic urethane resin having a thickness of 20 ⁇ m, a second resin layer having a thickness of 55 ⁇ m made of linear low density polyethylene (LLDPE), and an aluminum foil having a thickness of 20 ⁇ m (linear expansion coefficient: 24 ppm / ° C. ) And a back sheet (total thickness: 150 ⁇ m) made of a laminate of a 55 ⁇ m thick third resin layer made of linear low density polyethylene (LLDPE) as a protective layer and opposite to the transparent substrate of the protective layer
  • LLDPE linear low density polyethylene
  • Example 9 As the protective layer, a laminate of a first resin layer made of an acrylic urethane resin having a thickness of 20 ⁇ m and a second resin layer made of a polyethylene terephthalate (PET) film having a thickness of 50 ⁇ m (linear expansion coefficient: 65 ppm / ° C.) is used.
  • the laminated body is adhered with an acrylic adhesive so as to cover regions other than the first external connection terminal 15a and the second external connection terminal 15b in the regions on the photoelectric conversion cell 20 and the transparent substrate 11, and the protective layer.
  • a photoelectric conversion element was produced in the same manner as in Example 1 except that irregularities were formed on the entire surface opposite to the transparent substrate, and the arithmetic average roughness Ra on the surface was set to the values shown in Table 3.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Photovoltaic Devices (AREA)
  • Hybrid Cells (AREA)

Abstract

L'invention concerne un élément de conversion photoélectrique pourvu : d'un substrat transparent ; d'au moins une cellule de conversion photoélectrique disposée sur une première surface du substrat transparent ; et d'une couche de protection disposée du côté première surface du substrat transparent de façon à recouvrir et à protéger la cellule de conversion photoélectrique. La cellule de conversion photoélectrique comprend : une électrode disposée sur la première surface du substrat transparent ; et un contre-substrat faisant face à l'électrode. Par rapport audit élément de conversion photoélectrique, des évidements et des saillies sont formés dans une partie d'une surface de la couche de protection à l'endroit où, si l'on observe ledit élément de conversion photoélectrique depuis la direction perpendiculaire à la première surface du substrat transparent, au moins la couche de protection et le contre-substrat de la cellule de conversion photoélectrique se chevauchent, ladite surface de la couche de protection se trouvant du côté arrière de la surface côté substrat transparent.
PCT/JP2017/040824 2016-11-15 2017-11-13 Élément de conversion photoélectrique WO2018092740A1 (fr)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002260746A (ja) * 2001-02-28 2002-09-13 Toyota Central Res & Dev Lab Inc 色素増感型太陽電池及び色素増感型太陽電池モジュール
JP2007317565A (ja) * 2006-05-26 2007-12-06 Stanley Electric Co Ltd 有機光電変換素子
JP2012018924A (ja) * 2010-07-07 2012-01-26 Toyota Motor Engineering & Manufacturing North America Inc 回折格子を備えた太陽電池組立体
JP2013207162A (ja) * 2012-03-29 2013-10-07 Nippon Zeon Co Ltd 有機光電変換素子

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002260746A (ja) * 2001-02-28 2002-09-13 Toyota Central Res & Dev Lab Inc 色素増感型太陽電池及び色素増感型太陽電池モジュール
JP2007317565A (ja) * 2006-05-26 2007-12-06 Stanley Electric Co Ltd 有機光電変換素子
JP2012018924A (ja) * 2010-07-07 2012-01-26 Toyota Motor Engineering & Manufacturing North America Inc 回折格子を備えた太陽電池組立体
JP2013207162A (ja) * 2012-03-29 2013-10-07 Nippon Zeon Co Ltd 有機光電変換素子

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