WO2018090610A1 - 一种退火工艺方法、工艺腔室及退火设备 - Google Patents

一种退火工艺方法、工艺腔室及退火设备 Download PDF

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Publication number
WO2018090610A1
WO2018090610A1 PCT/CN2017/088423 CN2017088423W WO2018090610A1 WO 2018090610 A1 WO2018090610 A1 WO 2018090610A1 CN 2017088423 W CN2017088423 W CN 2017088423W WO 2018090610 A1 WO2018090610 A1 WO 2018090610A1
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Prior art keywords
chamber
process chamber
cavity
sub
gas
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Ceased
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PCT/CN2017/088423
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English (en)
French (fr)
Inventor
白志民
李强
邓斌
邓玉春
王厚工
丁培军
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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Priority to KR1020197014678A priority Critical patent/KR102252118B1/ko
Priority to JP2019524443A priority patent/JP6793903B2/ja
Publication of WO2018090610A1 publication Critical patent/WO2018090610A1/zh
Priority to US16/400,659 priority patent/US10886142B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0454—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3302—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Definitions

  • the present invention relates to the field of semiconductor device manufacturing technology, and in particular, to an annealing process method, a process chamber, and an annealing device.
  • Equipment capacity refers to the number of good products produced by the equipment during the working hours of the unit, and is an important technical parameter reflecting the processing capacity of the equipment.
  • FIG. 1 is a schematic view showing the structure of a conventional process chamber.
  • the existing process chamber includes two heating units, a bulb 31 and a heater 32, and is therefore referred to as a dual mode heating mode.
  • the bulb 31 can increase the rate of temperature rise of the chamber and maintain temperature uniformity.
  • the process chamber 3 also includes a quartz cover 33 and a cavity 34 that are sealed by a seal ring (not shown) to create a vacuum environment within the cavity 34.
  • An inlet and outlet 35 for the passage of the wafer is also provided on the cavity 34, and a wafer tip finger 36 is also disposed in the cavity 34, which is connected to the cylinder 37. Driven by the cylinder 37, the wafer tip 36 can be coupled to the robot to transfer the wafer to the heater 32.
  • the wafer is transferred to the heater 32 in the cavity 34; then, an annealing process is performed, and in the process, the process gas is introduced into the cavity 34 through the air inlet 38, and then The angle valve 39 of the vent is closed to maintain the process pressure in the chamber 34 at 1 to 10 T, which helps the heater 32 to transfer heat sufficiently to the wafer.
  • the existing annealing process has the following problems:
  • the process gas is introduced after the wafer enters the cavity 34, and the temperature of the process gas is low, this causes fluctuations in the temperature inside the cavity 34, thereby affecting the annealing of the wafer. Moreover, access to process gas After the body, only after the pressure in the cavity 34 is stable, the temperature in the cavity 34 can be gradually stabilized, and the temperature fluctuation time is long, which not only affects the equipment productivity, but also the temperature in the cavity 34 for the short-time annealing process. Fluctuations cannot meet the process requirements.
  • the invention provides an annealing process method, a process chamber and an annealing device for solving the above-mentioned deficiencies in the prior art, and is used for solving the problem that the temperature fluctuation in the process chamber is large and the equipment capacity is low.
  • the invention provides an annealing process method, the method comprising:
  • the pressure within the process chamber is maintained at a predetermined threshold during and after the wafer is introduced into the process chamber and during the annealing process of the wafer.
  • a first gas is introduced into the process chamber, and the pressure of the process chamber is maintained at the predetermined threshold;
  • a second gas is introduced into the process chamber and the pressure within the process chamber is maintained at the predetermined threshold.
  • the pressure in the process chamber is maintained at the predetermined threshold by controlling the flow of exhaust gas from the process chamber.
  • the method further comprises: evacuating the process chamber after performing an annealing process on a predetermined number of wafers.
  • the preset number is 25-50 pieces.
  • the first gas is N2
  • the second gas is a mixed gas of N2 and H2.
  • the flow rate of the first gas is 100-500 sccm
  • the flow rate of N2 in the second gas is 1000 sccm
  • the flow rate of H2 in the second gas is 300 sccm.
  • the preset threshold is 1 Torr-10 Torr.
  • the preset threshold is 2 Torr.
  • the present invention also provides a process chamber, comprising:
  • the air pressure control unit is configured to maintain the pressure in the process chamber at a preset threshold before and after the wafer is introduced into the process chamber and during the annealing process of the wafer.
  • the air pressure control unit comprises:
  • An intake structure disposed at a top of the process chamber for conveying gas into the process chamber
  • An exhaust structure disposed at a bottom of the process chamber for exhausting gas in the process chamber
  • a controller for controlling the intake structure to pass a first gas into the process chamber before introducing the wafer into the process chamber, while controlling the exhaust structure to maintain the pressure of the process chamber Presetting a threshold; and controlling the air intake structure to introduce a second gas into the process chamber after the wafer is introduced into the process chamber and during the annealing process of the wafer, while controlling the exhaust A structure to maintain a pressure within the process chamber at the predetermined threshold.
  • a valve for adjusting a gas flow rate is disposed on the exhaust structure
  • the controller controls the flow rate of the process chamber by adjusting the opening of the valve to maintain the pressure within the process chamber at the predetermined threshold.
  • the process chamber further includes a pressure detecting device for detecting a pressure in the process chamber and transmitting the detected value to the controller;
  • the controller is configured to adjust an opening degree of the valve according to the detected value and the threshold.
  • the process chamber further includes a chamber body on which at least two process sub-cavities are disposed, and the at least two process sub-cavities remain in communication.
  • the at least two process sub-cavities comprise a first process sub-cavity and a second process sub-cavity
  • the first process sub-cavity and the second process sub-cavity are identical in structure and arranged side by side in the horizontal direction, and in two There are connection sub-chambers that connect the two.
  • the intake structure includes a first intake structure and a second intake structure, and the first intake structure and the second intake structure are respectively disposed in the first process sub-cavity and the second process sub-chamber a top portion for respectively delivering gas into the first process sub-cavity and the second process sub-chamber;
  • the exhaust structure includes the first exhaust structure and a second exhaust structure, the first exhaust structure and the second exhaust structure being respectively disposed in the first process sub-cavity and the second process sub-cavity a bottom portion for respectively discharging the gas in the first process sub-cavity and the second process sub-cavity;
  • the controller is configured to simultaneously control the first intake structure and the second intake structure respectively before introducing the first wafer and the second wafer into the first process sub-cavity and the second process sub-chamber respectively Passing a first gas into the first process sub-cavity and the second process sub-chamber while controlling the first exhaust structure and the second exhaust structure to discharge the first process sub-cavity and the second process respectively a gas in the cavity; and a process of respectively annealing the first wafer and the second wafer into the first process sub-cavity and the second process sub-cavity and respectively performing the annealing process on the first wafer and the second wafer Controlling the first intake structure and the second intake structure to simultaneously introduce a second gas into the first process sub-cavity and the second process sub-chamber, respectively, while controlling the first exhaust structure and the first
  • the two exhaust structures respectively discharge the gases in the first process sub-cavity and the second process sub-cavity to maintain the pressure in the first process sub-cavity and the second process sub-ca
  • a valve for adjusting a gas flow rate is disposed on the exhaust structure; the controller controls an exhaust flow rate of the process chamber by adjusting an opening degree of the valve to The pressure is maintained at the preset threshold;
  • the exhaust structure further includes an exhaust manifold, the first exhaust structure and the second exhaust structure are both connected to the exhaust manifold, and the valve is disposed on the exhaust manifold for adjusting the The gas flow rate of the exhaust manifold is used to simultaneously adjust the gas flow rates of the first exhaust structure and the second exhaust structure.
  • the present invention also provides an annealing apparatus comprising the above-described process chamber provided by the present invention.
  • a transport platform is further included, and the process chamber is connected to the transport platform.
  • the transmission platform is quadrilateral, and the process chambers are three, and the three process chambers are respectively located on three sides of the transmission platform.
  • the transport platform is provided with a vacuum manipulator, the annealing device further comprising a loading chamber, the loading chamber being located at a side of the transport platform not connected to the process chamber;
  • the vacuum robot is configured to transfer wafers from the loading chamber to a first chamber and a second chamber of the process chamber, respectively.
  • the annealing process provided by the present invention maintains the pressure of the process chamber at a preset threshold by the process of introducing the wafer into the process chamber and the annealing process of the wafer, that is, the pressure in the chamber is always It is constant, which not only avoids the temperature fluctuation caused by the turbulent flow of gas during the annealing process of the wafer, but also shortens the time during which the temperature in the chamber returns to a stable state, thereby increasing the equipment productivity.
  • the process chamber provided by the invention maintains the pressure of the process chamber at a preset threshold by using the air pressure control unit before and after the wafer is introduced into the process chamber and during the annealing process of the wafer, which can not only avoid The temperature fluctuation caused by the turbulent flow of the gas during the annealing process of the heating unit on the wafer, and the time during which the temperature in the chamber is restored to be stable can be improved, thereby increasing the equipment productivity.
  • the annealing device provided by the invention can not only avoid the temperature fluctuation caused by the turbulent flow of the gas during the annealing process of the heating unit by the heating unit, but also shorten the temperature in the chamber by adopting the above-mentioned process chamber provided by the invention. Restoring stable time can increase equipment capacity.
  • FIG. 1 is a schematic structural view of a prior art process chamber
  • FIG. 2 is a schematic flow chart of an annealing process according to an embodiment of the present invention.
  • 3a is a schematic diagram of an intake structure of a process chamber according to an embodiment of the present invention.
  • FIG. 3b is a schematic diagram of an overall structure of a process chamber according to an embodiment of the present invention.
  • FIG. 4 is a schematic structural diagram of an annealing device according to an embodiment of the present invention.
  • first exhaust structure 822 first exhaust structure 822
  • second exhaust structure 823 exhaust manifold
  • first intake structure 832 first intake structure 832, second intake structure
  • Embodiments of the present invention provide an annealing process method for maintaining a pressure of a process chamber at a preset threshold, that is, in a chamber, before and after a wafer is introduced into a process chamber and during an annealing process of the wafer.
  • the pressure is always constant, which not only avoids the temperature fluctuation caused by the turbulent flow of the gas during the annealing process of the wafer, but also shortens the time during which the temperature in the chamber is restored, thereby increasing the equipment productivity.
  • An embodiment of the present invention further provides an annealing process, which is described in detail below in conjunction with FIG. 2 .
  • Process method As shown in FIG. 2, the method includes the following steps:
  • the first gas is introduced into the process chamber, and the pressure of the process chamber is maintained at a preset threshold.
  • the first gas is N2.
  • the flow rate of the first gas is 100 to 500 sccm.
  • the above preset threshold may be 1 Torr - 10 Torr, and preferably, the preset threshold is 2 Torr.
  • the second gas is a mixed gas of N 2 and H 2 , wherein a flow rate of N 2 is 1000 sccm, and a flow rate of H 2 is 300 sccm.
  • the gas in the chamber can be made to flow, so that the pollutants generated at a high temperature on the surface of the wafer can be carried out of the process chamber. In turn, the efficiency of pollutant treatment can be improved.
  • the pressure in the process chamber can be maintained at the predetermined threshold by controlling the exhaust flow of the process chamber.
  • the annealing process is controlled before and after the annealing process, when using a vacuum robot to transfer the wafer into the process chamber, it is necessary to consider the pressure difference between the two sides of the process chamber and the wafer position. For this reason, by installing a pressure gauge and a needle valve in the transmission chamber of the transmission platform, the pressure in the transmission chamber can be adjusted to be equal to the pressure of the process chamber, thereby ensuring that the process chamber is opened when the door valve is taken and fed. The pressure remains the same.
  • the first gas is introduced into the process chamber before the film is transferred into the process chamber, so that the pressure of the process chamber is maintained at a preset threshold after being transferred to the process chamber.
  • the temperature fluctuation caused by the turbulent flow of the gas during the annealing process of the wafer, and the time during which the temperature in the chamber is restored to be stable, can increase the equipment productivity.
  • the annealing process method provided by the embodiment of the invention further includes the following steps:
  • the process chamber is evacuated.
  • the vacuuming may be performed by using a background vacuuming method, that is, in the case where no wafer is placed in the process chamber, the process chamber is evacuated until the gas in the process chamber is completely extracted to obtain a higher The degree of vacuum.
  • the preset number is 25-50 pieces, that is, after continuously annealing the 25-50 wafers, the residual residual in the process chamber can be further removed by vacuuming the process chamber.
  • the number of transferred wafers may be counted by a controller for controlling the vacuum robot, and if the number of wafers delivered to each process chamber is greater than or equal to a preset number, the process chamber is evacuated. . If the number of wafers delivered to each process chamber is less than the predetermined amount, the wafer is continuously transferred into the process chamber and the annealing process continues.
  • the present invention also provides a process chamber including a gas pressure control unit for making a process chamber in a process chamber before and after transferring a wafer into a process chamber and during an annealing process on the wafer.
  • the pressure remains at a preset threshold.
  • the process chamber provided by the embodiment of the invention maintains the pressure of the process chamber at a preset threshold by using the air pressure control unit before and after the wafer is introduced into the process chamber and during the annealing process of the wafer.
  • the temperature fluctuation caused by the turbulent flow of the gas during the annealing process of the wafer by the heating unit can be avoided, and the time during which the temperature in the chamber is restored and stabilized can be shortened, thereby increasing the equipment productivity.
  • the air pressure control unit maintains the pressure in the process chamber at the predetermined threshold by discharging the gas in the chamber while introducing gas into the process chamber.
  • the chamber can be made The gas inside is in a flowing state, so that the pollutants generated at a high temperature on the surface of the wafer can be taken out of the process chamber, thereby improving the efficiency of the treatment of the pollutants.
  • the pressure in the process chamber can be maintained at the predetermined threshold by controlling the exhaust flow of the process chamber.
  • the air pressure control unit includes an intake structure, an exhaust structure, and a controller, wherein the intake structure is disposed at a top of the process chamber for conveying gas into the process chamber; and the exhaust structure is disposed at the process chamber a bottom portion for exhausting gas in the process chamber; a controller for controlling the intake structure to pass the first gas into the process chamber before introducing the wafer into the process chamber, and controlling the exhaust structure to make the process chamber Maintaining the predetermined threshold; and controlling the intake structure to introduce a second gas into the process chamber after the wafer is introduced into the process chamber and during the annealing process of the wafer, while controlling the exhaust structure To maintain the pressure in the process chamber at a preset threshold.
  • the process chamber 8 includes a chamber body 81 on which two process sub-chambers are disposed and the two process sub-chambers remain in communication.
  • the two process sub-cavities are a first process sub-cavity 811 and a second process sub-cavity 812, respectively, and the first process sub-cavity 811 and the second process sub-cavity 812 are identical in structure and arranged side by side in the horizontal direction, and in two A connection sub-cavity 813 that connects the two is provided between the two.
  • the two wafers in the two process sub-cavities can be simultaneously annealed, thereby Reduce time by half, increase process efficiency and equipment capacity.
  • the air intake structure includes a first air intake structure 831 and a second air intake structure 832, which are respectively disposed at the top of the first process sub-cavity 811 and the second process sub-cavity 812 for respectively respectively to the first process sub- Gas is delivered within cavity 811 and second process sub-cavity 812.
  • the exhaust structure includes a first exhaust structure 821 and a second exhaust structure 822, which are respectively disposed at the bottoms of the first process sub-cavity 811 and the second process sub-cavity 812 for respectively discharging the first process sub-cavity 811 and The gas in the second process sub-cavity 812.
  • the controller is configured to simultaneously control the first intake structure 831 and the second intake structure 832 before introducing the first wafer and the second wafer into the first process sub-cavity 811 and the second process sub-cavity 812, respectively.
  • the first process sub-cavity 811 and the second process sub-cavity 812 pass into the first gas while controlling the first exhaust structure 821 and the second exhaust structure 822 to discharge the first process sub-cavity 811 and the second process sub-cavity 812, respectively.
  • Each of the first intake structure 831 and the second intake structure 832 may be an intake pipe.
  • Each of the first exhaust structure 821 and the second exhaust structure 822 described above may be an exhaust pipe.
  • valve 83 for regulating the flow of the gas is provided on the exhaust structure.
  • the controller can control the exhaust flow of the process chamber by adjusting the opening of the valve to maintain the pressure within the process chamber at the predetermined threshold. It is easy to understand that the larger the opening of the valve, the larger the exhaust flow rate of the process chamber; conversely, the smaller the opening of the valve, the smaller the exhaust flow rate of the process chamber.
  • valve 83 can be a pressure butterfly valve.
  • the exhaust structure further includes an exhaust manifold, wherein the first exhaust structure 821 and the second exhaust structure 822 are both connected to the exhaust manifold, and the valve 83 is disposed on the exhaust manifold for adjusting the gas manifold
  • the gas flow rate is used to simultaneously adjust the gas flow rates of the first exhaust structure 821 and the second exhaust structure 822.
  • the exhaust structure further includes an exhaust manifold 823, the first exhaust structure 821 and the second exhaust structure 822 are both connected to the exhaust manifold 823, and the valve 83 is disposed at the exhaust manifold 823.
  • the first process sub-cavity 811 and the second process sub-cavity can be realized. Simultaneous control of the exhaust flow of 812.
  • the measuring device is disposed in any one of the above three chambers.
  • a pressure detecting device (not shown) is disposed in the first process sub-cavity 811, and the second process sub-cavity 812 or the connecting cavity 813, and the pressure detecting device is configured to detect the pressure in the process chamber, and Send the detected value to the controller.
  • the controller is specifically configured to control the opening degree of the valve 83 according to the detected value and the preset threshold, thereby implementing closed-loop control, thereby further controlling the pressure in the process chamber more accurately.
  • the preset threshold may be set in the controller in advance.
  • the preset threshold may be set to 1 Torr-10 Torr, preferably 2 Torr.
  • the opening degree of the control valve 83 is increased to increase the exhaust flow rate of the first process sub-cavity 811 and the second process sub-cavity 812, thereby reducing the first process sub-cavity 811. And the pressure within the second process sub-cavity 812.
  • the opening degree of the control valve 83 is decreased to reduce the exhaust flow rate of the first process sub-cavity 811 and the second process sub-cavity 812, thereby increasing the first process sub-cavity 811, And the pressure within the second process sub-cavity 812.
  • the controller determines that the detected value is equal to the preset threshold, maintaining the current opening degree of the valve 83 is unchanged to maintain the exhaust flow rate of the first process sub-cavity 811 and the second process sub-cavity 812, thereby the first process sub-cavity The pressure in 811, and the second process sub-cavity 812 is maintained at the current value.
  • process sub-cavities there are two process sub-cavities, but the present invention is not limited thereto. In practical applications, the process sub-cavities may also be three, four or more, three or more. The process sub-cavities remain connected. In addition, the number of connection chambers, intake structures, and exhaust structures should correspond to the number of process sub-chambers.
  • the process chamber provided by the embodiment of the present invention maintains the pressure of the process chamber by using the air pressure control unit before and after the wafer is introduced into the process chamber and during the annealing process of the wafer.
  • the preset threshold can not only avoid the temperature fluctuation caused by the turbulent flow of the gas during the annealing process of the heating unit, but also shorten the time for the temperature in the chamber to recover and stabilize, thereby improving the equipment production capacity.
  • an embodiment of the present invention further provides an annealing device. It comprises a process chamber 8 which employs the above described process chamber provided by an embodiment of the invention.
  • the annealing device further includes a transfer platform 1 connected to the transfer platform 1.
  • the transmission platform 1 has a quadrangular shape.
  • the process chamber 8 is three, and the three process chambers 8 are respectively located at three of the transmission platform 1. side.
  • each process chamber 8 includes two process sub-cavities (ie, the first process sub-cavity 811 and the second process sub-cavity 812), each process chamber 8 can simultaneously anneal two wafers. That is to say, the annealing equipment can simultaneously anneal six wafers, thereby greatly increasing the equipment throughput.
  • more process sub-cavities may be set according to specific needs, or the transmission platform 1 may be set to a pentagon or other polygons to further increase the number of process chambers 8, thereby increasing equipment productivity.
  • the transport platform 1 is provided with a vacuum robot (VTR) 2, and the annealing device further includes a loading chamber 4 located on the side of the non-connecting process chamber 8 of the transport platform 1, ie, the loading chamber 4 and the process chamber 8 is disposed around the transport platform 1 and is connected to the transport platform 1.
  • VTR vacuum robot
  • the vacuum manipulator 2 is used to transfer the wafer from the loading chamber 4 to the first process sub-cavity 811 of the process chamber 8, and the second process sub-cavity 812 for the annealing process.
  • the wafer After the wafer is annealed, it is taken out from the process chamber 8 by the vacuum robot 2 and then transferred to the loading chamber 4.
  • the loading chamber 4 has cold water to pass through, and the wafer after the high temperature process can be cooled.
  • the annealing device further includes an equipment front end module (EFEM) 5, an atmospheric environment of the front end module 5, and an atmospheric transfer robot (ATR) 6 disposed therein, which can load the cartridge 7 from the wafer.
  • EFEM equipment front end module
  • ATR atmospheric transfer robot
  • the wafer is transferred between the loading chambers 4, and the atmospheric transfer robot 6 is provided with a clamping mechanism for correcting the position of the wafer on the hand.
  • each process chamber 8 of the annealing apparatus is independent of each other, and the three process chambers 8 can simultaneously perform an annealing process, or may be in three process chambers according to actual production needs. At least one of the chambers 8 is selected for production, so that the annealing equipment is more flexible. Live and adapt better.
  • the annealing apparatus provided by the embodiment of the present invention can avoid the temperature caused by the turbulent flow of gas during the annealing process of the heating unit by using the above-mentioned process chamber provided by the embodiment of the present invention. Fluctuating, and shortening the temperature in the chamber to restore stability, which can increase equipment capacity.

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Abstract

本发明提供一种退火工艺方法、工艺腔室及退火设备，其方法包括：在将晶片传入工艺腔室内的前后以及对晶片进行退火工艺的过程中，均使工艺腔室内的压力保持在预设阈值，不仅可以避免因在对晶片进行退火工艺的过程中气体乱流而造成的温度波动，而且缩短了腔室内的温度恢复稳定的时间，从而可以提高设备产能。

Description

一种退火工艺方法、工艺腔室及退火设备 技术领域
本发明涉及半导体设备制造技术领域，具体涉及一种退火工艺方法、工艺腔室及退火设备。
背景技术
随着集成电路市场的高速发展，芯片产能扩大的需求一方面给设备商带来了新的市场机遇，另一方面也对设备商现有及前瞻性的技术能力提出了更高的要求。设备产能是指设备在单位工作时间内的良品产出数，是反映设备加工能力的一个重要技术参数。
图1为现有的工艺腔室的结构示意图。如图1所示，现有的工艺腔室包括灯泡31和加热器32两个加热单元，因此称之为双模式加热方式。灯泡31可以提高腔室的升温速率，并维持温度均匀性。工艺腔室3还包括石英盖33和腔体34，二者通过密封圈(图中未绘示)密封，从而能够在腔体34内形成真空环境。在腔体34上还设置有用于供晶片通过的出入口35，并且在腔体34内还设置有晶片顶指36，其与气缸37连接。在气缸37的驱动下，晶片顶指36能够与机械手相配合将晶片传递至加热器32上。在进行退火工艺的过程中，首先，将晶片传输至腔体34中的加热器32上；然后，进行退火工艺，且在此过程中，工艺气体通过进气口38通入腔体34，然后关闭排气口的角阀39，使腔体34内的工艺压力维持在1～10T，这样有助于加热器32充分传热给晶片。
现有的退火工艺存在以下问题：
由于工艺气体是在晶片进入腔体34后通入，而工艺气体的温度较低，这会造成腔体34内温度产生波动，从而影响晶片的退火。而且，通入工艺气 体之后，只有在腔体34内压力平稳之后，腔体34内温度才能逐渐稳定，温度波动时间较长，这不仅影响设备产能，而且对于短时间的退火工艺来说，腔体34内温度的波动无法满足工艺要求。
发明内容
本发明针对现有技术中存在的上述不足，提供一种退火工艺方法、工艺腔室及退火设备，用以解决工艺腔室内温度波动大，设备产能低的问题。
本发明为解决上述技术问题，采用如下技术方案：
本发明提供一种退火工艺方法，所述方法包括：
在将晶片传入工艺腔室内的前后以及对晶片进行退火工艺的过程中，均使所述工艺腔室内的压力保持在预设阈值。
优选的，在将晶片传入工艺腔室之前，向工艺腔室内通入第一气体，并使所述工艺腔室的压力维持所述预设阈值；
在将晶片传入工艺腔室之后，以及对晶片进行退火工艺的过程中，向所述工艺腔室内通入第二气体，并使所述工艺腔室内的压力维持在所述预设阈值。
优选的，通过控制所述工艺腔室的排气流量，以将工艺腔室内的压力维持在所述预设阈值。
优选的，所述方法还包括：在对预设数量的晶片进行退火工艺之后，对所述工艺腔室抽真空。
优选的，所述预设数量为25-50片。
优选的，所述第一气体为N2，所述第二气体为N2与H2的混合气体。
优选的，所述第一气体的流量为100～500sccm，所述第二气体中N2的流量为1000sccm，所述第二气体中H2的流量为300sccm。
优选的，所述预设阈值为1Torr-10Torr。
优选的，所述预设阈值为2Torr。
作为另一个技术方案，本发明还提供一种工艺腔室，其包括：
气压控制单元，用于在将晶片传入工艺腔室内的前后以及对晶片进行退火工艺的过程中，均使所述工艺腔室内的压力保持在预设阈值。
优选的，所述气压控制单元包括：
进气结构，设置在所述工艺腔室的顶部，用以向所述工艺腔室内输送气体；
排气结构，设置在所述工艺腔室的底部，用以排出所述工艺腔室内的气体；
控制器，用于在将晶片传入工艺腔室之前，控制所述进气结构向工艺腔室内通入第一气体，同时控制所述排气结构，以使所述工艺腔室的压力维持所述预设阈值；以及，在将晶片传入工艺腔室之后以及对晶片进行退火工艺的过程中，控制所述进气结构向所述工艺腔室内通入第二气体，同时控制所述排气结构，以使所述工艺腔室内的压力维持在所述预设阈值。
优选的，在所述排气结构上设置有用于调节气体流量的阀门；
所述控制器通过调节所述阀门的开度，来控制所述工艺腔室的排气流量，以将工艺腔室内的压力维持在所述预设阈值。
优选的，所述工艺腔室还包括压力检测装置，所述压力检测装置用于检测所述工艺腔室内的压力，并将检测值发送给所述控制器；
所述控制器用于根据所述检测值和所述阈值调节所述阀门的开度。
优选的，所述工艺腔室还包括腔室本体，在所述腔室本体上设置有至少两个工艺子腔，且所述至少两个工艺子腔保持连通。
优选的，所述至少两个工艺子腔包括第一工艺子腔和第二工艺子腔，所述第一工艺子腔和第二工艺子腔结构相同且在水平方向上并排设置，并且在二者之间设置有使二者连通的连接子腔。
优选的，所述进气结构包括第一进气结构和第二进气结构，所述第一进气结构和第二进气结构分别设置在所述第一工艺子腔和第二工艺子腔的顶部，用以分别向所述第一工艺子腔和第二工艺子腔内输送气体；
所述排气结构包括所述第一排气结构和第二排气结构，所述第一排气结构和第二排气结构分别设置在所述第一工艺子腔和第二工艺子腔的底部，用以分别排出所述第一工艺子腔和第二工艺子腔内的气体；
所述控制器用于在将第一晶片和第二晶片分别传入所述第一工艺子腔和所述第二工艺子腔之前，同时控制所述第一进气结构和第二进气结构分别向所述第一工艺子腔和第二工艺子腔内通入第一气体，同时控制所述第一排气结构和第二排气结构分别排出所述第一工艺子腔和第二工艺子腔内的气体；以及，在将第一晶片和第二晶片分别传入所述第一工艺子腔和第二工艺子腔之后以及分别对所述第一晶片和第二晶片进行退火工艺的过程中，同时控制所述第一进气结构和第二进气结构分别向所述第一工艺子腔和第二工艺子腔内通入第二气体，同时控制所述第一排气结构和第二排气结构分别排出所述第一工艺子腔和第二工艺子腔内的气体，以使所述第一工艺子腔和第二工艺子腔内的压力维持在所述预设阈值。
优选的，在所述排气结构上设置有用于调节气体流量的阀门；所述控制器通过调节所述阀门的开度，来控制所述工艺腔室的排气流量，以将工艺腔室内的压力维持在所述预设阈值；
所述排气结构还包括排气总管，所述第一排气结构和第二排气结构均与所述排气总管相连，所述阀门设置在所述排气总管上，用以通过调节所述排气总管的气体流量，来同时调节所述第一排气结构和第二排气结构的气体流量。
作为另一个技术方案，本发明还提供一种退火设备，其包括本发明提供的上述工艺腔室。
优选的，还包括传输平台，所述工艺腔室与所述传输平台相连。
优选的，所述传输平台为四边形，所述工艺腔室为三个，所述三个工艺腔室分别位于所述传输平台的三个侧面。
优选的，所述传输平台上设置有真空机械手，所述退火设备还包括装载腔室，所述装载腔室位于所述传输平台的非连接所述工艺腔室的侧面；
所述真空机械手用于，将晶片从所述装载腔室分别传输至所述工艺腔室的第一腔室和第二腔室内。
本发明能够实现以下有益效果：
本发明提供的退火工艺方法，其通过在将晶片传入工艺腔室内的前后以及对晶片进行退火工艺的过程中，均使工艺腔室的压力维持在预设阈值，即，腔室内的压力始终是恒定的，不仅可以避免因在对晶片进行退火工艺的过程中气体乱流而造成的温度波动，而且缩短了腔室内的温度恢复稳定的时间，从而可以提高设备产能。
本发明提供的工艺腔室，其通过借助气压控制单元在将晶片传入工艺腔室内的前后以及对晶片进行退火工艺的过程中，均使工艺腔室的压力维持在预设阈值，不仅可以避免因在加热单元对晶片进行退火工艺的过程中气体乱流而造成的温度波动，而且缩短了腔室内的温度恢复稳定的时间，从而可以提高设备产能。
本发明提供的退火设备，其通过采用本发明提供的上述工艺腔室，不仅可以避免因在加热单元对晶片进行退火工艺的过程中气体乱流而造成的温度波动，而且缩短了腔室内的温度恢复稳定的时间，从而可以提高设备产能。
附图说明
图1为现有的工艺腔室的结构示意图；
图2为本发明实施例提供的退火工艺流程示意图；
图3a为本发明实施例提供的工艺腔室的进气结构示意图；
图3b为本发明实施例提供的工艺腔室的整体结构示意图；
图4为本发明实施例提供的退火设备的结构示意图。
图例说明：
1、传输平台        2、真空机械手       4、装载腔室
5、设备前端模块    6、大气传输机械手   7、晶片加载盒
8、工艺腔室        31、灯泡            32、加热器
33、石英盖         34、腔体            35、出入口
36、晶片顶指       37、气缸            38、进气口
39、角阀           81、腔室本体     83、阀门
811、第一工艺子腔812、第二工艺子腔  813、连接子腔
821、第一排气结构  822、第二排气结构   823、排气总管
831、第一进气结构  832、第二进气结构
具体实施方式
下面将结合本发明中的附图，对本发明中的技术方案进行清楚、完整的描述，显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
本发明实施例提供一种退火工艺方法，其通过在将晶片传入工艺腔室内的前后以及对晶片进行退火工艺的过程中，均使工艺腔室的压力维持在预设阈值，即，腔室内的压力始终是恒定的，不仅可以避免因在对晶片进行退火工艺的过程中气体乱流而造成的温度波动，而且缩短了腔室内的温度恢复稳定的时间，从而可以提高设备产能。
本发明实施例还提供一种退火工艺方法，以下结合图2详细说明该退火 工艺方法。如图2所示，所述方法包括以下步骤：
S21，在将晶片传入工艺腔室之前，向工艺腔室内通入第一气体，并使所述工艺腔室的压力维持在预设阈值。
具体的，第一气体为N2。该第一气体的流量为100～500sccm。上述预设阈值可以为1Torr-10Torr，优选的，该预设阈值为2Torr。
S22，在将晶片传入工艺腔室之后，以及对晶片进行退火工艺的过程中，向工艺腔室内通入第二气体，并使工艺腔室内的压力维持在上述预设阈值。
具体的，第二气体为N2与H2的混合气体，其中，N2的流量为1000sccm，H2的流量为300sccm。
在退火工艺过程中，由于在向工艺腔室内通入气体的同时，排出腔室内的气体，这可以使腔室内的气体呈流动状态，从而可以将晶片表面高温产生的污染物带出工艺腔室，进而可以提高污染物处理效率。可选的，可以通过控制工艺腔室的排气流量，以将工艺腔室内的压力维持在上述预设阈值。
需要说明的是，由于退火工艺前后是稳压控制，因此在使用真空机械手将晶片传入工艺腔室内时，需要考虑工艺腔室的门阀(slit valve)两边的压力差以及晶片位置。为此，通过在传输平台的传输腔室内安装压力计和针阀，可以将传输腔室内的压力调节为与工艺腔室的压力相等，从而可以保证在开启门阀取送片时，工艺腔室内的压力不变。
通过上述步骤S21-S22可以看出，在向工艺腔室内传片之前，向工艺腔室内通入第一气体，以使工艺腔室的压力维持在预设阈值，在向工艺腔室内传片之后，以及对晶片进行退火工艺的过程中，向工艺腔室内通入第二气体，以使工艺腔室内的压力仍然维持在该预设阈值，即，腔室内的压力是恒定的，从而不仅可以避免因在对晶片进行退火工艺的过程中气体乱流而造成的温度波动，而且缩短了腔室内的温度恢复稳定的时间，从而可以提高设备产能。
在实际应用中，虽然在退火工艺过程中，工艺腔室内的气体始终是流动 的，可以带走部分污染物，但是，仍然不可避免地有微少污染物残留在腔体内。因此，当工艺腔室连续工作一段时间后，退火工艺过程中产生的污染物累积到一定程度，就需要对工艺腔室进行维护。为此，本发明实施例提供的退火工艺方法还包括以下步骤：
S23，在对预设数量的晶片进行退火工艺之后，对工艺腔室抽真空。
具体地，上述抽真空可以采用本底抽真空的方式，即，在工艺腔室内未放置有晶片的情况下，对工艺腔室抽真空，直到工艺腔室内的气体被完全抽出，以获得较高的真空度。
优选的，上述预设数量为25-50片，也就是说，连续对25-50片晶片进行退火工艺后，通过对工艺腔室抽真空，可以进一步去除残留在工艺腔室内的污染物。
具体的，可以利用用于控制真空机械手的控制器对传输的晶片的数量进行计数，若向各工艺腔室输送的晶片数量大于或等于预设数量，则对所述工艺腔室进行一次抽真空。若向各工艺腔室输送的晶片数量小于所述预设数量，则继续向工艺腔室内传输晶片，并继续退火工艺。
作为另一个技术方案，本发明还提供一种工艺腔室，其包括气压控制单元，用于在将晶片传入工艺腔室内的前后以及对晶片进行退火工艺的过程中，均使工艺腔室内的压力保持在预设阈值。
本发明实施例提供的工艺腔室，其通过借助气压控制单元在将晶片传入工艺腔室内的前后以及对晶片进行退火工艺的过程中，均使工艺腔室的压力维持在预设阈值，不仅可以避免因在加热单元对晶片进行退火工艺的过程中气体乱流而造成的温度波动，而且缩短了腔室内的温度恢复稳定的时间，从而可以提高设备产能。
优选的，气压控制单元通过在向工艺腔室内通入气体的同时，排出腔室内的气体，来使工艺腔室内的压力维持在上述预设阈值。这样，可以使腔室 内的气体呈流动状态，从而可以将晶片表面高温产生的污染物带出工艺腔室，进而可以提高污染物处理效率。可选的，可以通过控制工艺腔室的排气流量，而将工艺腔室内的压力维持在上述预设阈值。
具体地，气压控制单元包括包括进气结构、排气结构和控制器，其中，进气结构设置在工艺腔室的顶部，用以向工艺腔室内输送气体；排气结构设置在工艺腔室的底部，用以排出工艺腔室内的气体；控制器用于在将晶片传入工艺腔室之前，控制进气结构向工艺腔室内通入第一气体，同时控制排气结构，以使工艺腔室的压力维持所述预设阈值；以及，在将晶片传入工艺腔室之后以及对晶片进行退火工艺的过程中，控制进气结构向所述工艺腔室内通入第二气体，同时控制排气结构，以使工艺腔室内的压力维持在预设阈值。
在本实施例中，结合图3a和图3b所示，工艺腔室8包括腔室本体81，在该腔室本体81上设置有两个工艺子腔，且两个工艺子腔保持连通。具体地，两个工艺子腔分别为第一工艺子腔811和第二工艺子腔812，第一工艺子腔811和第二工艺子腔812结构相同且在水平方向上并排设置，并且在二者之间设置有使二者连通的连接子腔813。
通过在腔室本体上开设结构相同且对称设置的两个工艺子腔，并设置连接腔连通两个工艺子腔，可以同时对两个工艺子腔内的两个晶片进行退火工艺，从而将工艺时间缩短一半，提高工艺效率和设备产能。
进一步的，进气结构包括第一进气结构831和第二进气结构832，二者分别设置在第一工艺子腔811和第二工艺子腔812的顶部，用以分别向第一工艺子腔811和第二工艺子腔812内输送气体。排气结构包括第一排气结构821和第二排气结构822，二者分别设置在第一工艺子腔811和第二工艺子腔812的底部，用以分别排出第一工艺子腔811和第二工艺子腔812内的气体。
控制器用于在将第一晶片和第二晶片分别传入第一工艺子腔811和第二工艺子腔812之前，同时控制第一进气结构831和第二进气结构832分别向 第一工艺子腔811和第二工艺子腔812内通入第一气体，同时控制第一排气结构821和第二排气结构822分别排出第一工艺子腔811和第二工艺子腔812内的气体；以及，在将第一晶片和第二晶片分别传入第一工艺子腔811和第二工艺子腔812之后，以及分别对第一晶片和第二晶片进行退火工艺的过程中，同时控制第一进气结构831和第二进气结构832分别向第一工艺子腔811和第二工艺子腔812内通入第二气体，以使第一工艺子腔811和第二工艺子腔812内的压力维持在上述预设阈值。
上述第一进气结构831和第二进气结构832均可以为进气管。上述第一排气结构821和第二排气结构822均可以为排气管。
优选的，在排气结构上设置有用于调节气体流量的阀门83。而且，控制器可以通过调节阀门的开度，来控制工艺腔室的排气流量，以将工艺腔室内的压力维持在上述预设阈值。容易理解，阀门的开度越大，工艺腔室的排气流量越大；反之，阀门的开度越小，工艺腔室的排气流量越小。优选的，阀门83可以为压力蝶阀。
优选的，排气结构还包括排气总管，上述第一排气结构821和第二排气结构822均与排气总管相连，阀门83设置在该排气总管上，用以通过调节气体总管的气体流量，来同时调节第一排气结构821和第二排气结构822的气体流量。
进一步优选的，如图3b所示，上述排气结构还包括排气总管823，第一排气结构821和第二排气结构822均与排气总管823相连，阀门83设置在排气总管823上，用以同时通过调节排气总管823的气体流量，来同时调节第一排气结构821和第二排气结构822的气体流量，从而可以实现第一工艺子腔811和第二工艺子腔812的排气流量的同时控制。
由于第一工艺子腔811、和第二工艺子腔812和连接腔813相互连通，三个腔室内的压力相同，因此，为了检测工艺腔室内的压力，可以将压力检 测装置设置在上述三个腔室中的任意一个腔室内。具体的，在第一工艺子腔811、和第二工艺子腔812或连接腔813内设置有压力检测装置(图中未绘示)，该压力检测装置用于检测工艺腔室内的压力，并将检测值发送给控制器。控制器具体用于根据检测值和预设阈值，控制阀门83的开度，从而实现闭环控制，进而可以更加精确地控制工艺腔室内的压力。
具体的，上述预设阈值可以预先在控制器内设定，通常，该预设阈值可以设置为1Torr-10Torr，优选为2Torr。
当控制器判断检测值大于预设阈值时，控制阀门83的开度增大，以增加第一工艺子腔811、和第二工艺子腔812的排气流量，从而降低第一工艺子腔811、和第二工艺子腔812内的压力。当控制器判断检测值小于阈值时，控制阀门83的开度减小，以减小第一工艺子腔811、和第二工艺子腔812的排气流量，从而增加第一工艺子腔811、和第二工艺子腔812内的压力。当控制器判断检测值等于预设阈值时，维持阀门83当前的开度不变，以维持第一工艺子腔811、和第二工艺子腔812的排气流量，从而将第一工艺子腔811、和第二工艺子腔812内的压力维持在当前的数值。
需要说明的是，在本实施例中，工艺子腔为两个，但是本发明并不局限于此，在实际应用中，工艺子腔还可以为三个、四个或者更多，三个以上的工艺子腔保持连通。此外，连接腔、进气结构和排气结构的数量应与工艺子腔的数量相对应。
综上所述，本发明实施例提供的工艺腔室，其通过借助气压控制单元在将晶片传入工艺腔室内的前后以及对晶片进行退火工艺的过程中，均使工艺腔室的压力维持在预设阈值，不仅可以避免因在加热单元对晶片进行退火工艺的过程中气体乱流而造成的温度波动，而且缩短了腔室内的温度恢复稳定的时间，从而可以提高设备产能。
作为另一个技术方案，如图4所示，本发明实施例还提供一种退火设备， 其包括工艺腔室8，该工艺腔室8采用了本发明实施例提供的上述工艺腔室。
进一步的，退火设备还包括传输平台1，工艺腔室8与传输平台1相连。
在本发明实施例中，如图4所示，传输平台1呈四边形，为了进一步提高设备产能，优选的，工艺腔室8为三个，三个工艺腔室8分别位于传输平台1的三个侧面。
由于每个工艺腔室8均包括两个工艺子腔(即第一工艺子腔811、和第二工艺子腔812)，因此，每个工艺腔室8可以同时对两个晶片进行退火工艺，也就是说，退火设备可以同时对六个晶片进行退火工艺，从而使设备产能大幅提高。当然，在实际应用中，可以根据具体需要设置更多的工艺子腔，或者还可以将传输平台1设置成五边形或者其他多边形，以进一步增加工艺腔室8的数量，从而提高设备产能。
在本实施例中，传输平台1上设置有真空机械手(VTR)2，退火设备还包括装载腔室4，装载腔室4位于传输平台1的非连接工艺腔室8的侧面，即装载腔室4和工艺腔室8设置于传输平台1的四周，并与传输平台1相连。
真空机械手2用于，将晶片从装载腔室4传输至工艺腔室8的第一工艺子腔811、和第二工艺子腔812内，以进行退火工艺。
晶片完成退火后，由真空机械手2从工艺腔室8中取出，再传输至装载腔室4，装载腔室4有冷水通入，可以对高温工艺后的晶片进行降温。
在本实施例中，如图4所示，退火设备还包括设备前端模块(EFEM)5，设备前端模块5大气环境，其内设置有大气传输机械手(ATR)6，可以从晶片加载盒7和装载腔室4之间传输晶片，大气传输机械手6上设置有夹持机构可以对晶片在手上的位置进行校正。
需要说明的是，本发明实施例提供的退火设备的每个工艺腔室8是相互独立的，三个工艺腔室8可以同时进行退火工艺，也可以根据实际的生产需要，在三个工艺腔室8中选择至少一个投入生产，使得退火设备使用更为灵 活、适应性更好。
综上所述，本发明实施例提供的退火设备，其通过采用本发明实施例提供的上述工艺腔室，不仅可以避免因在加热单元对晶片进行退火工艺的过程中气体乱流而造成的温度波动，而且缩短了腔室内的温度恢复稳定的时间，从而可以提高设备产能。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (21)

  1. 一种退火工艺方法，其特征在于，所述方法包括：
    在将晶片传入工艺腔室内的前后以及对晶片进行退火工艺的过程中，均使所述工艺腔室内的压力保持在预设阈值。
  2. 如权利要求1所述的退火工艺方法，其特征在于，
    在将晶片传入工艺腔室之前，向工艺腔室内通入第一气体，并使所述工艺腔室的压力维持所述预设阈值；
    在将晶片传入工艺腔室之后，以及对晶片进行退火工艺的过程中，向所述工艺腔室内通入第二气体，并使所述工艺腔室内的压力维持在所述预设阈值。
  3. 如权利要求2所述的退火工艺方法，其特征在于，通过控制所述工艺腔室的排气流量，以将工艺腔室内的压力维持在所述预设阈值。
  4. 如权利要求1所述的退火工艺方法，其特征在于，所述方法还包括：在对预设数量的晶片进行退火工艺之后，对所述工艺腔室抽真空。
  5. 如权利要求4所述的方法，其特征在于，所述预设数量为25-50片。
  6. 如权利要求2所述的方法，其特征在于，所述第一气体为N2，所述第二气体为N2与H2的混合气体。
  7. 如权利要求6所述的方法，其特征在于，所述第一气体的流量为100～500sccm，所述第二气体中N2的流量为1000sccm，所述第二气体中H2的流量为300sccm。
  8. 如权利要求1所述的方法，其特征在于，所述预设阈值为1Torr-10Torr。
  9. 如权利要求8所述的方法，其特征在于，所述预设阈值为2Torr。
  10. 一种工艺腔室，其特征在于，包括：
    气压控制单元，用于在将晶片传入工艺腔室内的前后以及对晶片进行退火工艺的过程中，均使所述工艺腔室内的压力保持在预设阈值。
  11. 如权利要求10所述的工艺腔室，其特征在于，所述气压控制单元包括：
    进气结构，设置在所述工艺腔室的顶部，用以向所述工艺腔室内输送气体；
    排气结构，设置在所述工艺腔室的底部，用以排出所述工艺腔室内的气体；
    控制器，用于在将晶片传入工艺腔室之前，控制所述进气结构向工艺腔室内通入第一气体，同时控制所述排气结构，以使所述工艺腔室的压力维持所述预设阈值；以及，在将晶片传入工艺腔室之后以及对晶片进行退火工艺的过程中，控制所述进气结构向所述工艺腔室内通入第二气体，同时控制所述排气结构，以使所述工艺腔室内的压力维持在所述预设阈值。
  12. 如权利要求11所述的退火工艺方法，其特征在于，在所述排气结构上设置有用于调节气体流量的阀门；
    所述控制器通过调节所述阀门的开度，来控制所述工艺腔室的排气流量，以将工艺腔室内的压力维持在所述预设阈值。
  13. 如权利要求12所述的工艺腔室，其特征在于，所述工艺腔室还包 括压力检测装置，所述压力检测装置用于检测所述工艺腔室内的压力，并将检测值发送给所述控制器；
    所述控制器用于根据所述检测值和所述阈值调节所述阀门的开度。
  14. 如权利要求11-13任意一项所述的工艺腔室，其特征在于，所述工艺腔室还包括腔室本体，在所述腔室本体上设置有至少两个工艺子腔，且所述至少两个工艺子腔保持连通。
  15. 如权利要求14所述的工艺腔室，其特征在于，所述至少两个工艺子腔包括第一工艺子腔和第二工艺子腔，所述第一工艺子腔和第二工艺子腔结构相同且在水平方向上并排设置，并且在二者之间设置有使二者连通的连接子腔。
  16. 如权利要求15所述的工艺腔室，其特征在于，所述进气结构包括第一进气结构和第二进气结构，所述第一进气结构和第二进气结构分别设置在所述第一工艺子腔和第二工艺子腔的顶部，用以分别向所述第一工艺子腔和第二工艺子腔内输送气体；
    所述排气结构包括所述第一排气结构和第二排气结构，所述第一排气结构和第二排气结构分别设置在所述第一工艺子腔和第二工艺子腔的底部，用以分别排出所述第一工艺子腔和第二工艺子腔内的气体；
    所述控制器用于在将第一晶片和第二晶片分别传入所述第一工艺子腔和所述第二工艺子腔之前，同时控制所述第一进气结构和第二进气结构分别向所述第一工艺子腔和第二工艺子腔内通入第一气体，同时控制所述第一排气结构和第二排气结构分别排出所述第一工艺子腔和第二工艺子腔内的气体；以及，在将第一晶片和第二晶片分别传入所述第一工艺子腔和第二工艺子腔之后以及分别对所述第一晶片和第二晶片进行退火工艺的过程中，同时控制所述第一进气结构和第二进气结构分别向所述第一工艺子腔和第二工 艺子腔内通入第二气体，同时控制所述第一排气结构和第二排气结构分别排出所述第一工艺子腔和第二工艺子腔内的气体，以使所述第一工艺子腔和第二工艺子腔内的压力维持在所述预设阈值。
  17. 如权利要求16所述的工艺腔室，其特征在于，在所述排气结构上设置有用于调节气体流量的阀门；所述控制器通过调节所述阀门的开度，来控制所述工艺腔室的排气流量，以将工艺腔室内的压力维持在所述预设阈值；
    所述排气结构还包括排气总管，所述第一排气结构和第二排气结构均与所述排气总管相连，所述阀门设置在所述排气总管上，用以通过调节所述排气总管的气体流量，来同时调节所述第一排气结构和第二排气结构的气体流量。
  18. 一种退火设备，其特征在于，包括如权利要求10-17任意一项所述的工艺腔室。
  19. 如权利要求18所述的退火设备，其特征在于，还包括传输平台，所述工艺腔室与所述传输平台相连。
  20. 如权利要求19所述的退火设备，其特征在于，所述传输平台为四边形，所述工艺腔室为三个，所述三个工艺腔室分别位于所述传输平台的三个侧面。
  21. 如权利要求20所述的退火设备，其特征在于，所述传输平台上设置有真空机械手，所述退火设备还包括装载腔室，所述装载腔室位于所述传输平台的非连接所述工艺腔室的侧面；
    所述真空机械手用于，将晶片从所述装载腔室分别传输至所述工艺腔室 的第一腔室和第二腔室内
PCT/CN2017/088423 2016-11-21 2017-06-15 一种退火工艺方法、工艺腔室及退火设备 Ceased WO2018090610A1 (zh)

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