WO2018088326A1 - バルブ装置、このバルブ装置を用いた流量制御方法および半導体製造方法 - Google Patents
バルブ装置、このバルブ装置を用いた流量制御方法および半導体製造方法 Download PDFInfo
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- WO2018088326A1 WO2018088326A1 PCT/JP2017/039729 JP2017039729W WO2018088326A1 WO 2018088326 A1 WO2018088326 A1 WO 2018088326A1 JP 2017039729 W JP2017039729 W JP 2017039729W WO 2018088326 A1 WO2018088326 A1 WO 2018088326A1
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- Prior art keywords
- actuator
- valve
- valve device
- operation member
- opening
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- 238000000034 method Methods 0.000 title claims description 35
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000004065 semiconductor Substances 0.000 title claims description 21
- 239000012530 fluid Substances 0.000 claims description 23
- 230000008569 process Effects 0.000 claims description 13
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- 230000001105 regulatory effect Effects 0.000 claims description 2
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- 239000010408 film Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 6
- 239000010935 stainless steel Substances 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 229910000531 Co alloy Inorganic materials 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
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- 229910052751 metal Inorganic materials 0.000 description 2
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- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011038 discontinuous diafiltration by volume reduction Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
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- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 description 1
- 239000005023 polychlorotrifluoroethylene (PCTFE) polymer Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
Images
Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K7/00—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves
- F16K7/12—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves with flat, dished, or bowl-shaped diaphragm
- F16K7/14—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves with flat, dished, or bowl-shaped diaphragm arranged to be deformed against a flat seat
- F16K7/17—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves with flat, dished, or bowl-shaped diaphragm arranged to be deformed against a flat seat the diaphragm being actuated by fluid pressure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K31/00—Actuating devices; Operating means; Releasing devices
- F16K31/004—Actuating devices; Operating means; Releasing devices actuated by piezoelectric means
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K31/00—Actuating devices; Operating means; Releasing devices
- F16K31/004—Actuating devices; Operating means; Releasing devices actuated by piezoelectric means
- F16K31/007—Piezoelectric stacks
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K31/00—Actuating devices; Operating means; Releasing devices
- F16K31/02—Actuating devices; Operating means; Releasing devices electric; magnetic
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K31/00—Actuating devices; Operating means; Releasing devices
- F16K31/12—Actuating devices; Operating means; Releasing devices actuated by fluid
- F16K31/122—Actuating devices; Operating means; Releasing devices actuated by fluid the fluid acting on a piston
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K31/00—Actuating devices; Operating means; Releasing devices
- F16K31/12—Actuating devices; Operating means; Releasing devices actuated by fluid
- F16K31/122—Actuating devices; Operating means; Releasing devices actuated by fluid the fluid acting on a piston
- F16K31/1221—Actuating devices; Operating means; Releasing devices actuated by fluid the fluid acting on a piston one side of the piston being spring-loaded
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K31/00—Actuating devices; Operating means; Releasing devices
- F16K31/12—Actuating devices; Operating means; Releasing devices actuated by fluid
- F16K31/122—Actuating devices; Operating means; Releasing devices actuated by fluid the fluid acting on a piston
- F16K31/1225—Actuating devices; Operating means; Releasing devices actuated by fluid the fluid acting on a piston with a plurality of pistons
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
Definitions
- the present invention relates to a valve device, a flow rate control method using the valve device, and a semiconductor manufacturing method.
- a fluid control device called an integrated gas system in which various fluid control devices such as an open / close valve, a regulator, and a mass flow controller are integrated is used to supply a precisely measured processing gas to a processing chamber. It has been.
- the integrated gas system housed in a box is called a gas box. Normally, the processing gas output from the gas box is directly supplied to the processing chamber. However, in a processing process in which a film is deposited on a substrate by an atomic layer deposition method (ALD), the processing gas is stable.
- the processing gas supplied from the gas box is temporarily stored in a tank serving as a buffer, and a valve provided in the immediate vicinity of the processing chamber is frequently opened and closed to remove the processing gas from the tank in a vacuum atmosphere.
- the ALD method is one of chemical vapor deposition methods, and two or more kinds of processing gases are alternately flowed on the substrate surface one by one under film forming conditions such as temperature and time, and atoms on the substrate surface. It is a method of depositing a film by a single layer by reacting, and since it can be controlled by a single atomic layer, a uniform film thickness can be formed and a film can be grown very densely as a film quality. . In the semiconductor manufacturing process by the ALD method, it is necessary to precisely adjust the flow rate of the processing gas, and it is also necessary to secure the flow rate of the processing gas to some extent by increasing the diameter of the substrate.
- a valve device includes a valve body that defines a flow path, A valve body provided to be able to open and close the flow path of the valve body; In the opening and closing direction in which the valve body opens and closes the flow path, it can move between a preset closed position in which the valve body closes the flow path and a preset open position in which the valve body opens the flow path
- An operation member for operating the valve body provided in A main actuator for moving the operating member to the open position or the closed position; And an adjusting actuator for adjusting the position of the operation member positioned at the open position.
- the main actuator moves the operating member to the open position
- the adjustment actuator may be configured to adjust a position in the opening / closing direction of the operation member positioned at the open position by the main actuator.
- the adjustment actuator is disposed at a predetermined position with respect to the valve body, and the force acting on the operation member that has reached the target position is received by the tip of the adjustment actuator.
- a configuration in which the position of the operation member in the opening / closing direction is adjusted while restricting the movement of the operation member can be employed.
- the adjustment actuator can be configured to adjust the position of the operating member in the opening / closing direction by expanding and contracting the entire length from the distal end portion to the base end portion in the opening / closing direction.
- an actuator using expansion and contraction of the piezoelectric element can be adopted, and more preferably, a case having a base end portion and a tip end portion in the opening / closing direction, and the base end accommodated in the case And a piezoelectric element laminated between the tip and the tip, and the length of the case between the base end and the tip is extended and contracted by using the expansion and contraction of the piezoelectric element. Can be adopted.
- the flow rate control method of the present invention is characterized in that the flow rate of the fluid is controlled using the valve device described above, and the flow rate of the fluid is controlled by the stroke of the main actuator, and the adjustment actuator is operated, thereby enabling precise flow rate control. It becomes possible.
- the semiconductor manufacturing method of the present invention is characterized in that the above valve device is used for controlling the flow rate of the process gas in a manufacturing process of a semiconductor device that requires a process step using a process gas in a sealed chamber.
- the fluid control device of the present invention is A fluid control device having a plurality of fluid devices,
- the fluid device includes the valve device configured as described above.
- the semiconductor manufacturing apparatus of the present invention includes a valve device having the above-described configuration for controlling the process gas in a semiconductor device manufacturing process that requires a process step using a process gas in a sealed chamber.
- the adjustment actuator is provided in addition to the main actuator, the flow rate can be precisely adjusted, and the flow rate adjustment man-hour can be greatly reduced.
- the main actuator and the adjustment actuator by appropriately selecting the main actuator and the adjustment actuator, the required valve opening can be obtained and precise flow rate control can be performed.
- flow rate adjustment and flow rate control can be performed by giving a command to the adjustment actuator. Therefore, flow rate adjustment can be performed immediately, and the flow rate can be controlled in real time by the adjustment actuator.
- FIG. 2 is a longitudinal sectional view of the valve device of FIG. 1 in an open state.
- the expanded sectional view of the principal part of the valve apparatus of FIG. The expanded sectional view of the principal part for demonstrating the state at the time of flow volume adjustment (at the time of flow volume reduction
- the longitudinal cross-sectional view which shows the modification of the valve apparatus which concerns on one Embodiment of this invention. Schematic which shows the example of application to the semiconductor manufacturing process of the valve apparatus which concerns on one Embodiment of this invention.
- FIG. 1 is a diagram showing a configuration of a valve device according to an embodiment of the present invention, showing a state in which the valve is fully closed
- FIG. 2 is an enlarged cross-sectional view of a main part of FIG.
- FIG. 5 is a diagram for explaining the operation of a piezoelectric actuator as an adjustment actuator.
- the upward direction is defined as the opening direction A1
- the downward direction is defined as the closing direction A2.
- 1, 1 is a valve device, 10 is a valve body, 20 is a diaphragm as a valve body, 38 is a diaphragm retainer, 30 is a bonnet, 40 is an operating member, 50 is a casing, 60 is a main actuator, 70 is an adjusting body, Reference numeral 80 denotes an actuator presser, 90 denotes a coil spring, 100 denotes a piezoelectric actuator as an adjustment actuator, 110 denotes an actuator receiver, 120 denotes a disc spring as an elastic member, and OR denotes an O-ring as a seal member.
- the valve body 10 is made of stainless steel, and has a block-shaped valve body main body 10a and connecting portions 10b and 10c that protrude from the sides of the valve body main body 10a, and define flow paths 12 and 13. ing. One ends of the flow paths 12 and 13 are opened at the end faces of the connecting portions 10b and 10c, respectively, and the other ends communicate with a concave valve chamber 14 whose upper side is open.
- a valve seat 15 made of synthetic resin (PFA, PA, PI, PCTFE, etc.) is fitted and fixed in a mounting groove provided at the opening periphery of the other end side of the flow path 12. In this embodiment, as is clear from FIG. 2, the valve seat 15 is fixed in the mounting groove by caulking.
- the diaphragm 20 is a valve body provided so that the flow paths 12 and 13 of the valve body 10 can be opened and closed.
- the diaphragm 20 is disposed above the valve seat 15 to maintain the airtightness of the valve chamber 14 and the central portion thereof. Moves up and down and contacts and separates from the valve seat 15 to open and close the flow paths 12 and 13.
- the diaphragm 20 is formed into a spherical shell shape in which a convex arc shape is in a natural state by causing the central portion of a metal thin plate such as special stainless steel and a nickel-cobalt alloy thin plate to bulge upward. ing.
- a diaphragm 20 is formed by laminating three sheets of the special stainless steel sheet and one sheet of the nickel / cobalt alloy sheet.
- the diaphragm 20 is mounted on the protruding portion of the inner peripheral surface of the valve chamber 14, and the lower end portion of the bonnet 30 inserted into the valve chamber 14 is screwed into the threaded portion 16 of the valve body 10, so that the diaphragm 20 is made of stainless steel. It is pressed to the projecting portion side of the valve body 10 through an alloy presser adapter 25 and is clamped and fixed in an airtight state.
- the nickel-cobalt alloy thin film is disposed on the gas contact side.
- other configurations can be used.
- the operation member 40 is a member for operating the diaphragm 20 so that the diaphragm 20 opens and closes the flow paths 12 and 13, is formed in a substantially cylindrical shape, is closed at the lower end side by the closing portion 48, and is opened at the upper end side.
- the bonnet 30 is fitted to the inner peripheral surface of the bonnet 30 and the inner peripheral surface of the cylindrical portion 51 formed in the casing 50, and is supported so as to be movable in the vertical direction.
- 1 and 2 are the opening and closing directions of the operating member 40, A1 is the opening direction, and A2 is the closing direction.
- the upward direction with respect to the valve body 10 is the opening direction A1, and the downward direction is the closing direction A2, but the present invention is not limited to this.
- a diaphragm presser 38 made of a synthetic resin such as polyimide that contacts the upper surface of the central portion of the diaphragm 20 is attached to the lower end surface of the operation member 40.
- a coil spring 90 is provided between the upper surface of the flange 45 formed on the outer peripheral surface of the operation member 40 and the ceiling surface of the casing, and the operation member 40 is always attached in the closing direction A2 by the coil spring 90. It is energized. For this reason, as shown in FIG. 2, in a state where the main actuator 60 is not operating, the diaphragm 20 is pressed against the valve seat 15 and the space between the flow paths 12 and 13 is closed.
- the flange 45 may be integrated with the operation member 40 or may be a separate body.
- the coil spring 90 is accommodated in a holding portion 52 formed between the inner peripheral surface of the casing 50 and the cylindrical portion 51.
- the coil spring 90 is used, it is not necessarily limited to this, Other types of springs, such as a disk spring and a leaf
- the casing 50 is fixed to the bonnet 30 by screwing the inner periphery of the lower end portion thereof into a screw portion 36 formed on the outer periphery of the upper end portion of the bonnet 30.
- An annular bulkhead 63 is fixed between the upper end surface of the bonnet 30 and the casing 50.
- Cylinder chambers C ⁇ b> 1 and C ⁇ b> 2 that are partitioned vertically by a bulkhead 63 are formed between the outer peripheral surface of the operation member 40 and the casing 50 and the bonnet 30.
- An annular piston 61 is fitted and inserted into the upper cylinder chamber C1, and an annular piston 62 is fitted and inserted into the lower cylinder chamber C2.
- These cylinder chambers C1, C2 and pistons 61, 62 constitute a main actuator 60 that moves the operating member 40 in the opening direction A1.
- the main actuator 60 can increase the force by the operation gas by using two pistons 61 and 62 to increase the working area of the pressure.
- the space above the piston 61 in the cylinder chamber C ⁇ b> 1 is connected to the atmosphere by the air passage 53.
- the space above the piston 62 in the cylinder chamber C2 is connected to the atmosphere by the ventilation path h1.
- the space below the pistons 61 and 62 in the cylinder chambers C1 and C2 is supplied with a high-pressure operation gas, so that the airtightness is maintained by the O-ring OR.
- These spaces communicate with flow passages 41 and 42 formed in the operation member 40, respectively.
- the flow paths 41 and 42 communicate with a flow path Ch formed between the inner peripheral surface of the operation member 40 and the outer peripheral surface of the case body 101 of the piezoelectric actuator 100, and the flow path Ch is located above the operation member 40.
- the end surface communicates with a space SP formed by the cylindrical portion 51 of the casing 50 and the lower end surface of the adjustment body 70.
- a flow path 81 formed in the annular actuator presser 80 connects the space SP and a flow path 71 that passes through the central portion of the adjustment body 70.
- the flow passage 71 of the adjustment body 70 communicates with the pipe 160 via the pipe joint 150.
- the piezoelectric actuator 100 incorporates laminated piezoelectric elements (not shown) in the cylindrical case body 101 shown in FIG.
- the case main body 101 is made of a metal such as a stainless alloy, and the end surface on the hemispherical tip 102 side and the end surface on the base end 103 side are closed.
- the end surface of the case main body 101 on the front end portion 102 side is elastically deformed, and the hemispherical front end portion 102 is displaced in the longitudinal direction.
- the total length of the piezoelectric actuator 100 is L0 by applying a predetermined voltage V0 at which the elongation of the piezoelectric actuator 100 becomes d.
- V0 a voltage higher than the predetermined voltage V0
- the total length of the piezoelectric actuator 100 is L0 + d at the maximum, and when a voltage (including no voltage) lower than the predetermined voltage V0 is applied, the total length of the piezoelectric actuator 100 is the minimum L0. -D. Therefore, the full length from the front-end
- the tip 102 of the piezoelectric actuator 100 is hemispherical, but the present invention is not limited to this, and the tip may be a flat surface.
- power supply to the piezoelectric actuator 100 is performed by the wiring 105.
- the wiring 105 is led to the pipe 160 through the flow passage 71 of the adjustment body 70 and the pipe joint 150, and is drawn to the outside from the middle of the pipe 160.
- the position of the base end portion 103 of the piezoelectric actuator 100 in the opening / closing direction is defined by the lower end surface of the adjustment body 70 via the actuator presser 80.
- a screw portion provided on the outer peripheral surface of the adjustment body 70 is screwed into a screw hole 56 formed in the upper portion of the casing 50, and the position of the adjustment body 70 in the opening / closing directions A1 and A2 is adjusted.
- the tip portion 102 of the piezoelectric actuator 100 is in contact with a conical receiving surface 110a formed on the upper surface of the disk-shaped actuator receiver 110 as shown in FIG.
- the actuator receiver 110 is movable in the opening / closing directions A1 and A2.
- a disc spring 120 as an elastic member is provided between the lower surface of the actuator receiver 110 and the upper surface of the closing portion 48 of the operation member 40.
- the disc spring 120 is already compressed to some extent and elastically deformed, and the actuator receiver 110 is constantly urged in the opening direction A ⁇ b> 1 by the restoring force of the disc spring 120.
- the piezoelectric actuator 100 is also always urged in the opening direction A ⁇ b> 1, and the upper surface of the base end portion 103 is pressed against the actuator presser 80. Accordingly, the piezoelectric actuator 100 is disposed at a predetermined position with respect to the valve body 10.
- the piezoelectric actuator 100 Since the piezoelectric actuator 100 is not connected to any member, it can move relative to the operation member 40 in the opening and closing directions A1 and A2.
- the number and direction of the disc springs 120 can be appropriately changed according to conditions.
- other elastic members such as a coil spring and a leaf spring can be used.
- using a disc spring has an advantage that the spring rigidity, stroke, and the like can be easily adjusted.
- valve device 1 configured as described above will be described with reference to FIGS. 4 to 6B.
- the operation gas G having a predetermined pressure is supplied into the valve device 1 through the pipe 160, a thrust force that pushes the piston 61, 62 from the pistons 61, 62 to the operation member 40 in the opening direction A1 acts.
- the pressure of the operating gas G is set to a value sufficient to move the operating member 40 in the opening direction A1 against the biasing force in the closing direction A2 acting on the operating member 40 from the coil spring 90 and the disc spring 120. Yes.
- the operating member 40 moves in the opening direction A1 while further compressing the disc spring 120, and the operating member 40 is moved to the regulating surface 110t of the actuator receiver 110 as shown in FIG.
- the contact surface 40t comes into contact, and the actuator receiver 110 receives a force from the operation member 40 in the opening direction A1.
- This force acts as a force for compressing the piezoelectric actuator 100 in the opening / closing directions A1 and A2 through the tip portion 102 of the piezoelectric actuator 100, but the piezoelectric actuator 100 has sufficient rigidity to resist this force.
- the force in the opening direction A1 acting on the operation member 40 is received by the tip portion 102 of the piezoelectric actuator 100, and the movement of the operation member 40 in the A1 direction is restricted at the open position OP.
- the diaphragm 20 is separated from the valve seat 15 by the lift amount Lf described above.
- the piezoelectric actuator 100 is operated.
- the left side of the center line Ct in FIGS. 6A and 6B shows the state shown in FIG. 5, and the right side of the center line Ct shows the state after adjusting the positions of the operating members 40 in the opening and closing directions A1 and A2. .
- the piezoelectric actuator 100 is extended and the operation member 40 is moved in the closing direction A2.
- the lift amount Lf ⁇ after adjustment which is the distance between the diaphragm 20 and the valve seat 15, is smaller than the lift amount Lf before adjustment.
- the piezoelectric actuator 100 When adjusting in the direction in which the flow rate of the fluid is increased, as shown in FIG. 6B, the piezoelectric actuator 100 is shortened and the operation member 40 is moved in the opening direction A1. Thereby, the lift amount Lf + after adjustment which is the distance between the diaphragm 20 and the valve seat 15 becomes larger than the lift amount Lf before adjustment.
- the maximum lift amount of the diaphragm 20 is about 100 to 200 ⁇ m
- the adjustment amount by the piezoelectric actuator 100 is about ⁇ 20 ⁇ m. That is, the stroke of the piezoelectric actuator 100 cannot cover the lift amount of the diaphragm 20, but the main actuator 60 that operates with the operation gas G and the piezoelectric actuator 100 are used together, so that the main actuator 60 with a relatively long stroke is used. Therefore, the flow rate can be precisely adjusted by the piezoelectric actuator 100 having a relatively short stroke while the flow rate supplied by the valve device 1 is secured, and it is not necessary to manually adjust the flow rate by the adjustment body 70 or the like. Man-hours are greatly reduced. According to the present embodiment, precise flow rate adjustment is possible only by changing the voltage applied to the piezoelectric actuator 100. Therefore, the flow rate adjustment can be performed immediately and the flow rate can be controlled in real time.
- FIG. 7 shows a modification of the above embodiment.
- the adjustment body 70 is simply screwed into the screw hole 56 of the casing 50.
- the lock nut 180 is provided on the adjustment body 70A, and the lock nut 180 is screwed into the screw hole 56 for adjustment.
- the upper surface of the body 70A is pressed by the lower surface of the lock nut 180 to prevent the adjustment body 70A from rotating.
- the rotation of the adjustment body 70A can prevent problems such as the open position OP of the operation member 40 being shifted and the wiring 105 being twisted.
- a semiconductor manufacturing apparatus 1000 shown in FIG. 8 is an apparatus for performing a semiconductor manufacturing process by the ALD method.
- 300 is a process gas supply source
- 400 is a gas box
- 500 is a tank
- 600 is a control unit
- 700 is a processing chamber.
- 800 denote exhaust pumps.
- it is necessary to precisely adjust the flow rate of the processing gas, and it is also necessary to secure the flow rate of the processing gas to some extent by increasing the diameter of the substrate.
- the gas box 400 is an integrated gas system (fluid control) in which various fluid control devices such as an open / close valve, a regulator, and a mass flow controller are integrated and accommodated in the box in order to supply a precisely measured process gas to the processing chamber 700.
- the tank 500 functions as a buffer that temporarily stores the processing gas supplied from the gas box 400.
- the control unit 600 executes supply control of the operation gas G to the valve device 1 and flow rate adjustment control by the piezoelectric actuator 100.
- the processing chamber 700 provides a sealed processing space for forming a film on a substrate by the ALD method.
- the exhaust pump 800 evacuates the processing chamber 700.
- the processing gas can be initially adjusted by sending a command for adjusting the flow rate from the control unit 600 to the valve device 1. Further, even when the film forming process is being performed in the processing chamber 700, the flow rate of the processing gas can be adjusted, and the processing gas flow rate can be optimized in real time.
- valve device 1 is used in a semiconductor manufacturing process by the ALD method.
- the present invention is not limited to this, and the present invention is, for example, an atomic layer etching method (ALE: Atomic Layer Etching method). It can be applied to any object that requires precise flow rate adjustment.
- ALE Atomic Layer Etching method
- the piston built in the cylinder chamber operated by gas pressure is used as the main actuator.
- the present invention is not limited to this, and various optimum actuators can be selected according to the object to be controlled. It is.
- the piezoelectric actuator is used as the adjustment actuator.
- a motor such as a stepping motor and a mechanism such as a ball screw and a nut that convert rotational motion into linear motion
- Various actuators such as a coil and a thermoactuator that expands and contracts due to a temperature change can be adopted.
- the piezoelectric actuator 100 has low heat release, heat resistance of hundreds of degrees Celsius, can be always operated not only during initial adjustment but also during fluid control, and has low non-linear characteristics such as backlash during expansion and contraction. Therefore, it is preferable as the adjusting actuator of the present invention in that the positioning accuracy is very high and a relatively large compressive load can be supported.
- the piezoelectric actuator 100 is responsible for highly accurate control of the position of the operation member 40 thereafter.
- the maximum stroke of the actuator can be reduced as much as possible (the piezoelectric actuator can be miniaturized), and the position of the operation member 40 can be finely adjusted and the position can be controlled with high accuracy.
- a so-called normally closed type valve has been described as an example, but the present invention is not limited to this, and can be applied to a normally open type valve.
- the opening degree of the valve body may be adjusted by an adjustment actuator.
- the piezoelectric actuator 100 is configured to support (accept) the force acting on the operation member 40.
- the present invention is not limited to this, and the operation member 40 is positioned at the open position OP.
- the adjustment actuator can be used to adjust only the position of the operation member 40 in the opening / closing direction without supporting the force acting on the operation member 40.
- valve body the diaphragm is exemplified as the valve body, but the present invention is not limited to this, and other types of valve bodies may be employed.
- valve device 1 is arranged outside the gas box 400 as a fluid control device.
- the fluid control in which various fluid devices such as open / close valves, regulators, and mass flow controllers are integrated and accommodated in the box. It is also possible to include the valve device 1 of the above embodiment in the device.
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Abstract
Description
通常、上記のガスボックスから出力される処理ガスを処理チャンバに直接供給するが、原子層堆積法(ALD:Atomic Layer Deposition 法)により基板に膜を堆積させる処理プロセスにおいては、処理ガスを安定的に供給するためにガスボックスから供給される処理ガスをバッファとしてのタンクに一時的に貯留し、処理チャンバの直近に設けられたバルブを高頻度で開閉させてタンクからの処理ガスを真空雰囲気の処理チャンバへ供給することが行われている。なお、処理チャンバの直近に設けられるバルブとしては、例えば、特許文献1,2を参照。
ALD法は、化学気相成長法の1つであり、温度や時間等の成膜条件の下で、2種類以上の処理ガスを1種類ずつ基板表面上に交互に流し、基板表面上原子と反応させて単層ずつ膜を堆積させる方法であり、単原子層ずつ制御が可能である為、均一な膜厚を形成させることができ、膜質としても非常に緻密に膜を成長させることができる。
ALD法による半導体製造プロセスでは、処理ガスの流量を精密に調整する必要があるとともに、基板の大口径化等により、処理ガスの流量をある程度確保する必要もある。
本発明の他の目的は、流量調整工数を大幅に削減できるバルブ装置を提供することにある。
本発明のさらに他の目的は、流量調整を即座に実行できるバルブ装置を提供することにある。
本発明のさらに他の目的は、上記のバルブ装置を用いた流量制御方法、流量制御装置、半導体製造装置および半導体製造方法を提供することにある。
前記バルブボディの流路を開閉可能に設けられた弁体と、
前記弁体に流路を開閉させる開閉方向において、予め設定された前記弁体に流路を閉鎖させる閉位置と予め設定された前記弁体に流路を開放させる開位置との間で移動可能に設けられた前記弁体を操作する操作部材と、
前記操作部材を前記開位置又は閉位置に移動させる主アクチュエータと、
前記開位置に位置付けられた前記操作部材の位置を調整するための調整用アクチュエータと、を有することを特徴とする。
前記調整用アクチュエータは、前記主アクチュエータにより前記開位置に位置付けられた前記操作部材の前記開閉方向の位置を調整する、構成を採用できる。
複数の流体機器を有する流体制御装置であって、
前記流体機器に上記構成のバルブ装置が含まれる。
本発明によれば、主アクチュエータおよび調整アクチュエータを適宜選択することにより、必要なバルブ開度を得られるとともに精密な流量制御が可能となる。
本発明によれば、調整アクチュエータに指令を与えれば流量調整および流量制御が可能であるので、流量調整を即座に実行でき、調整用アクチュエータによりリアルタイムに流量制御することも可能となる。
図1は、本発明の一実施形態に係るバルブ装置の構成を示す図であって、バルブが全閉時の状態を示しており、図2は図1の要部の拡大断面図、図3は調整用アクチュエータとしての圧電アクチュエータの動作を説明するための図である。なお、以下の説明において上方向を開方向A1、下方向を閉方向A2とする。
図1において、1はバルブ装置、10はバルブボディ、20は弁体としてのダイヤフラム、38はダイヤフラム押え、30はボンネット、40は操作部材、50はケーシング、60は主アクチュエータ、70は調整ボディ、80はアクチュエータ押え、90はコイルばね、100は調整用アクチュエータとしての圧電アクチュエータ、110はアクチュエータ受け、120は弾性部材としての皿ばね、ORはシール部材としてのOリングを示している。
ダイヤフラム20は、その周縁部が弁室14の内周面の突出部上に載置され、弁室14内へ挿入したボンネット30の下端部をバルブボディ10のねじ部16へねじ込むことにより、ステンレス合金製の押えアダプタ25を介してバルブボディ10の前記突出部側へ押圧され、気密状態で挾持固定されている。尚、ニッケル・コバルト合金薄膜は、接ガス側に配置されている
なお、ダイヤフラムとしては、他の構成のものも使用可能である。
操作部材40の下端面にはダイヤフラム20の中央部上面に当接するポリイミド等の合成樹脂製のダイヤフラム押え38が装着されている。
操作部材40の外周面に形成された鍔部45の上面と、ケーシングの天井面との間には、コイルばね90が設けられ、操作部材40はコイルばね90により閉方向A2に向けて常時付勢されている。このため、図2に示すように、主アクチュエータ60が作動していない状態では、ダイヤフラム20は弁座15に押し付けられ、流路12,13の間は閉じられた状態となっている。
なお、鍔部45は、操作部材40と一体であっても、別体であっても良い。
操作部材40の外周面と、ケーシング50およびボンネット30との間には、バルクヘッド63によって上下に区画されたシリンダ室C1,C2が形成されている。
シリンダ室C1のピストン61の上側の空間は、通気路53により大気につながっている。シリンダ室C2のピストン62の上側の空間は、通気路h1により大気につながっている。
図1に示すように、圧電アクチュエータ100への給電は、配線105により行われる。配線105は、調整ボディ70の流通路71および管継手150を通じて管160に導かれており、管160の途中から外部に引き出されている。
圧電アクチュエータ100の先端部102は、図2に示すように円盤状のアクチュエータ受け110の上面に形成された円錐面状の受け面110aに当接している。アクチュエータ受け110は、開閉方向A1,A2に移動可能となっている。
皿ばね120の個数や向きは条件に応じて適宜変更できる。また、皿ばね120以外にもコイルばね、板ばね等の他の弾性部材を使用できるが、皿ばねを使用すると、ばね剛性やストローク等を調整しやすいという利点がある。
図4に示すように、管160を通じて所定圧力の操作ガスGをバルブ装置1内に供給すると、ピストン61,62から操作部材40へ開方向A1に押し上げる推力が作用する。操作ガスGの圧力は、操作部材40にコイルばね90および皿ばね120から作用する閉方向A2の付勢力に抗して操作部材40を開方向A1に移動させるのに十分な値に設定されている。このような操作ガスGが供給されると、図5に示すように、操作部材40は皿ばね120をさらに圧縮しつつ開方向A1に移動し、アクチュエータ受け110の規制面110tに操作部材40の当接面40tが当接し、アクチュエータ受け110は操作部材40から開方向A1へ向かう力を受ける。この力は、圧電アクチュエータ100の先端部102を通じて、圧電アクチュエータ100を開閉方向A1,A2に圧縮する力として作用するが、圧電アクチュエータ100はこの力に抗する十分な剛性を有する。したがって、操作部材40に作用する開方向A1の力は、圧電アクチュエータ100の先端部102で受け止められ、操作部材40のA1方向の移動は、開位置OPにおいて規制される。この状態において、ダイヤフラム20は、弁座15から上記したリフト量Lfだけ離隔する。
図6Aおよび図6Bの中心線Ctの左側は、図5に示す状態を示しており、中心線Ctの右側は操作部材40の開閉方向A1,A2の位置を調整した後の状態を示している。
流体の流量を減少させる方向に調整する場合には、図6Aに示すように、圧電アクチュエータ100を伸長させて、操作部材40を閉方向A2に移動させる。これにより、ダイヤフラム20と弁座15との距離である調整後のリフト量Lf-は、調整前のリフト量Lfよりも小さくなる。
流体の流量を増加させる方向に調整する場合には、図6Bに示すように、圧電アクチュエータ100を短縮させて、操作部材40を開方向A1に移動させる。これにより、ダイヤフラム20と弁座15との距離である調整後のリフト量Lf+は、調整前のリフト量Lfよりも大きくなる。
すなわち、圧電アクチュエータ100のストロークでは、ダイヤフラム20のリフト量をカバーすることができないが、操作ガスGで動作する主アクチュエータ60と圧電アクチュエータ100を併用することで、相対的にストロークの長い主アクチュエータ60でバルブ装置1の供給する流量を確保しつつ、相対的にストロークの短い圧電アクチュエータ100で精密に流量調整することができ、調整ボディ70等により手動で流量調整をする必要がなくなるので、流量調整工数が大幅に削減される。
本実施形態によれば、圧電アクチュエータ100に印可する電圧を変化させるだけで精密な流量調整が可能であるので、流量調整を即座に実行できるとともに、リアルタイムに流量制御をすることも可能となる。
上記実施形態では、調整ボディ70をケーシング50のネジ孔56にねじ込むだけであったが、図7では、調整ボディ70Aの上にロックナット180を設け、ネジ孔56にロックナット180をねじ込んで調整ボディ70Aの上面をロックナット180の下面で押圧して調整ボディ70Aの回動を阻止する。調整ボディ70Aの回転により、操作部材40の開位置OPがずれる、配線105が捩れる等の不具合を防ぐことができる。
図8に示す半導体製造装置1000は、ALD法による半導体製造プロセスを実行するための装置であり、300はプロセスガス供給源、400はガスボックス、500はタンク、600は制御部、700は処理チャンバ、800は排気ポンプを示している。
ALD法による半導体製造プロセスでは、処理ガスの流量を精密に調整する必要があるとともに、基板の大口径化により、処理ガスの流量をある程度確保する必要もある。
ガスボックス400は、正確に計量したプロセスガスを処理チャンバ700に供給するために、開閉バルブ、レギュレータ、マスフローコントローラ等の各種の流体制御機器を集積化してボックスに収容した集積化ガスシステム(流体制御装置)である。
タンク500は、ガスボックス400から供給される処理ガスを一時的に貯留するバッファとして機能する。
制御部600は、バルブ装置1への操作ガスGの供給制御や圧電アクチュエータ100による流量調整制御を実行する。
処理チャンバ700は、ALD法による基板への膜形成のための密閉処理空間を提供する。
排気ポンプ800は、処理チャンバ700内を真空引きする。
また、処理チャンバ700内で成膜プロセスを実行途中であっても、処理ガスの流量調整が可能であり、リアルタイムに処理ガス流量の最適化ができる。
10 バルブボディ
15 弁座
20 ダイヤフラム
25 押えアダプタ
30 ボンネット
38 ダイヤフラム押え
40 操作部材
40t 当接面
45 鍔部
48 閉塞部
50 ケーシング
60 主アクチュエータ
61,62 ピストン
63 バルクヘッド
70,70A 調整ボディ
71 流通路
80 アクチュエータ押え
81 流通路
90 コイルばね
100 圧電アクチュエータ(調整用アクチュエータ)
101 ケース本体
102 先端部
103 基端部
105 配線
110 アクチュエータ受け
110t 規制面
120 皿ばね(弾性部材)
150 管継手
160 管
180 ロックナット
300 プロセスガス供給源
400 ガスボックス
500 タンク
600 制御部
700 処理チャンバ
800 排気ポンプ
1000 半導体製造装置
A1 開方向
A2 閉方向
C1,C2 シリンダ室
Ch 流通路
SP 空間
OP 開位置
CP 閉位置
OR Oリング
G 操作ガス
Lf 調整前のリフト量
Lf+,Lf- 調整後のリフト量
Claims (12)
- 流路を画定するバルブボディと、
前記バルブボディの流路を開閉可能に設けられた弁体と、
前記弁体に流路を開閉させる開閉方向において、予め設定された前記弁体に流路を閉鎖させる閉位置と予め設定された前記弁体に流路を開放させる開位置との間で移動可能に設けられた前記弁体を操作する操作部材と、
前記操作部材を前記開位置又は閉位置に移動させる主アクチュエータと、
前記開位置に位置付けられた前記操作部材の位置を調整するための調整用アクチュエータと、を有することを特徴とするバルブ装置。 - 前記主アクチュエータは、前記操作部材を前記開位置に移動させ、
前記調整用アクチュエータは、前記主アクチュエータにより前記開位置に位置付けられた前記操作部材の前記開閉方向の位置を調整することを特徴とする、請求項1に記載のバルブ装置。 - 前記調整用アクチュエータは、前記バルブボディに対して所定位置に配置されており、前記開位置に到達した前記操作部材に作用する力を当該調整用アクチュエータの先端部で受け止めて当該操作部材の移動を規制しつつ、当該操作部材の前記開閉方向の位置を調整する、ことを特徴とする請求項2に記載のバルブ装置。
- 前記調用アクチュエータは、前記開閉方向において前記先端部から基端部までの全長が伸縮することで、前記操作部材の前記開閉方向の位置を調整する、ことを特徴とする請求項3に記載のバルブ装置。
- 前記操作部材と前記調整用アクチュエータの間には、当該調整用アクチュエータを前記所定位置に向けて常時付勢する弾性部材が介在している、ことを特徴とする請求項3又は4に記載のバルブ装置。
- 前記調整用アクチュエータは、前記圧電素子の伸縮を利用したアクチュエータである、ことを特徴とする請求項1ないし5のいずれかに記載のバルブ装置。
- 前記調整用アクチュエータは、前記開閉方向において基端部と先端部とを有するケースと、当該ケース内に収容され前記基端部と前記先端部との間で積層された圧電素子と、を有し、前記圧電素子の伸縮を利用して当該ケースの前記基端部と前記先端部との間の全長を伸縮させる、ことを特徴とする請求項6に記載のバルブ装置。
- 前記主アクチュエータはガス圧を駆動源とするアクチュエータである、ことを特徴とする請求項1ないし7のいずれかに記載のバルブ装置。
- 請求項1ないし8に記載のバルブ装置を用いて、流体の流量を調整する流量制御方法。
- 複数の流体機器を有する流体制御装置であって、
前記流体機器に請求項1ないし8のいずれかに記載のバルブ装置が含まれる、ことを特徴とする流体制御装置。 - 密閉されたチャンバ内においてプロセスガスによる処理工程を要する半導体装置の製造プロセスにおいて、前記プロセスガスの流量制御に請求項1ないし8のいずれかに記載のバルブ装置を用いたことを特徴とする半導体製造方法。
- 密閉されたチャンバ内においてプロセスガスによる処理工程を要する半導体装置の製造プロセスにおいて、前記プロセスガスの制御に請求項1~8のいずれかに記載のバルブ装置を用いたことを特徴とする半導体製造装置。
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US16/347,934 US11098819B2 (en) | 2016-11-08 | 2017-11-02 | Valve device, flow control method using the same, and semiconductor manufacturing method |
KR1020197015535A KR20190077477A (ko) | 2016-11-08 | 2017-11-02 | 밸브 장치, 이 밸브 장치를 사용한 유량제어방법 및 반도체 제조 방법 |
JP2018513389A JP6336692B1 (ja) | 2016-11-08 | 2017-11-02 | バルブ装置、このバルブ装置を用いた流量制御方法および半導体製造方法 |
EP17869179.6A EP3540280A4 (en) | 2016-11-08 | 2017-11-02 | VALVE DEVICE, METHOD FOR CONTROLLING THE FLOW RATE WITH THIS VALVE DEVICE AND METHOD FOR PRODUCING A SEMICONDUCTOR |
CN201780069196.1A CN109952459B (zh) | 2016-11-08 | 2017-11-02 | 阀装置、使用该阀装置的流量控制方法和半导体制造方法 |
KR1020217019061A KR102312480B1 (ko) | 2016-11-08 | 2017-11-02 | 밸브 장치, 이 밸브 장치를 사용한 유량제어방법 및 반도체 제조 방법 |
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JPWO2018100968A1 (ja) * | 2016-11-30 | 2019-10-17 | 株式会社フジキン | バルブ装置、このバルブ装置を用いた流量制御方法および半導体製造方法 |
KR20190124274A (ko) | 2017-06-22 | 2019-11-04 | 가부시키가이샤 후지킨 | 유량 제어 장치 및 유량 제어 장치의 유량 제어 방법 |
WO2020158573A1 (ja) * | 2019-01-31 | 2020-08-06 | 株式会社フジキン | バルブ装置、流量制御方法、流体制御装置、半導体製造方法、および半導体製造装置 |
WO2020158459A1 (ja) * | 2019-01-31 | 2020-08-06 | 株式会社フジキン | バルブ装置、このバルブ装置を用いた流量制御方法、流体制御装置、半導体製造方法、および半導体製造装置 |
JP2020122539A (ja) * | 2019-01-31 | 2020-08-13 | 株式会社フジキン | バルブ装置、このバルブ装置を用いた流量制御方法、半導体製造方法、および半導体製造装置 |
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WO2020044827A1 (ja) * | 2018-08-30 | 2020-03-05 | 株式会社フジキン | 流体制御機器 |
CN110307351A (zh) * | 2019-07-10 | 2019-10-08 | 广东工业大学 | 一种压电陶瓷限流阀 |
IL268254B2 (en) * | 2019-07-24 | 2024-10-01 | Ham Let Israel Canada Ltd | Flow control accessory |
JP7382054B2 (ja) * | 2019-08-29 | 2023-11-16 | 株式会社フジキン | バルブ装置および流量制御装置 |
US11927274B2 (en) | 2019-11-25 | 2024-03-12 | M-System Co., Ltd. | Actuator and fluid control device |
KR20230131613A (ko) | 2022-03-07 | 2023-09-14 | 주식회사 코일넷 | 미생물 분뇨처리조가 구비된 변기 |
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KR20190124274A (ko) | 2017-06-22 | 2019-11-04 | 가부시키가이샤 후지킨 | 유량 제어 장치 및 유량 제어 장치의 유량 제어 방법 |
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WO2019059043A1 (ja) * | 2017-09-25 | 2019-03-28 | 株式会社フジキン | バルブ装置、流量調整方法、流体制御装置、流量制御方法、半導体製造装置および半導体製造方法 |
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Also Published As
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EP3540280A1 (en) | 2019-09-18 |
CN109952459B (zh) | 2021-02-26 |
KR20190077477A (ko) | 2019-07-03 |
KR20210079403A (ko) | 2021-06-29 |
TW201825817A (zh) | 2018-07-16 |
US11098819B2 (en) | 2021-08-24 |
US20190285176A1 (en) | 2019-09-19 |
JPWO2018088326A1 (ja) | 2018-11-15 |
JP2018132195A (ja) | 2018-08-23 |
EP3540280A4 (en) | 2019-11-27 |
JP6336692B1 (ja) | 2018-06-06 |
TWI671483B (zh) | 2019-09-11 |
KR102312480B1 (ko) | 2021-10-14 |
CN109952459A (zh) | 2019-06-28 |
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