WO2018086210A1 - Tft基板及其制作方法 - Google Patents

Tft基板及其制作方法 Download PDF

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Publication number
WO2018086210A1
WO2018086210A1 PCT/CN2016/112253 CN2016112253W WO2018086210A1 WO 2018086210 A1 WO2018086210 A1 WO 2018086210A1 CN 2016112253 W CN2016112253 W CN 2016112253W WO 2018086210 A1 WO2018086210 A1 WO 2018086210A1
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Prior art keywords
layer
electrode
disposed
drain
tft substrate
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English (en)
French (fr)
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张鹏振
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to US15/329,234 priority Critical patent/US10504731B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/20—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a TFT substrate and a method of fabricating the same.
  • LCDs liquid crystal displays
  • Various consumer electronic products such as digital assistants, digital cameras, notebook computers, and desktop computers have become mainstream in display devices.
  • liquid crystal display devices which include a liquid crystal display panel and a backlight module.
  • the working principle of the liquid crystal display panel is to place liquid crystal molecules in two parallel glass substrates. There are many vertical and horizontal small wires between the two glass substrates, and the liquid crystal molecules are controlled to change direction by energizing or not, and the light of the backlight module is changed. Refracted to produce a picture.
  • a liquid crystal display panel comprises a CF (Color Filter) substrate, a thin film transistor (TFT) substrate, a liquid crystal (LC) sandwiched between the color filter substrate and the thin film transistor substrate, and a sealant frame ( Sealant),
  • the molding process generally includes: front array (Array) process (film, yellow, etching and stripping), middle cell (Cell) process (TFT substrate and CF substrate bonding) and rear module assembly Process (drive IC and printed circuit board is pressed).
  • the front Array process mainly forms a TFT substrate to control the movement of liquid crystal molecules;
  • the middle Cell process mainly adds liquid crystal between the TFT substrate and the CF substrate;
  • the rear module assembly process is mainly to drive the IC to press and print the circuit.
  • the integration of the plates drives the liquid crystal molecules to rotate and display images.
  • OLED Organic Light-Emitting Diode
  • OLED Organic Light-Emitting Diode
  • the working temperature has wide adaptability, light volume, fast response, easy to realize color display and large screen display, easy to realize integration with integrated circuit driver, easy to realize flexible display, and the like, and thus has broad application prospects.
  • the OLED generally includes a substrate, an anode provided on the substrate, a hole injection layer provided on the anode, a hole transport layer provided on the hole injection layer, a light-emitting layer provided on the hole transport layer, and a light-emitting layer.
  • the principle of illumination of OLED display devices is semiconductor materials and organic light-emitting materials. Under the electric field drive, luminescence is caused by carrier injection and recombination.
  • an OLED display device generally employs an ITO pixel electrode and a metal electrode as anodes and cathodes of the device, respectively.
  • electrons and holes are injected from the cathode and the anode to the electron transport layer and the hole transport layer, respectively.
  • the holes migrate to the light-emitting layer through the electron transport layer and the hole transport layer, respectively, and meet in the light-emitting layer to form excitons and excite the light-emitting molecules, and the latter emits visible light through radiation relaxation.
  • OLED can be divided into two types: passive matrix OLED (PMOLED) and active matrix OLED (AMOLED), namely direct addressing and thin film transistor matrix addressing.
  • PMOLED passive matrix OLED
  • AMOLED active matrix OLED
  • the AMOLED has pixels arranged in an array, belongs to an active display type, has high luminous efficiency, and is generally used as a high-definition large-sized display device.
  • Thin film transistors are the main driving components in current liquid crystal display devices and active matrix driven organic electroluminescent display devices, and are directly related to the development direction of high performance flat panel display devices.
  • Indium gallium zinc oxide (IGZO) has become a research hotspot in the field of thin film transistor technology due to its high mobility, suitable for large-area production, and easy conversion from amorphous silicon (a-Si) process.
  • IGZO active layer in IGZO-TFT is very sensitive to the process and environment. It is often necessary to use an etch barrier (ES) structure and add a mask to protect the IGZO active layer, which is not conducive to the cost of the TFT process.
  • ES etch barrier
  • the channel size of the TFT device is large, and the parasitic capacitance is also large.
  • the forbidden band width of IGZO (about 3.4 eV) is similar to the forbidden band width of ultraviolet (UV) light (higher than 3.1 eV)
  • IGZO has a good absorption effect on UV light, and the IGZO active layer is in UV light. Under the illumination, the easily absorbed energy of the valence band electrons shifts to the conduction band, which causes the threshold voltage of the TFT to shift, resulting in an unstable display effect of the display.
  • An object of the present invention is to provide a method for fabricating a TFT substrate, which can improve the stability of the TFT device and has a low production cost.
  • the present invention provides a method for fabricating a TFT substrate, comprising the following steps:
  • Step 1 providing a substrate, forming a gate on the substrate, and forming a gate insulating layer on the gate and the substrate;
  • Step 2 forming an active layer corresponding to the upper portion of the gate on the gate insulating layer, a source and a drain are formed on the active layer and the gate insulating layer, and the source and the drain are respectively in contact with both sides of the active layer;
  • Step 3 Form a passivation layer on the source, drain, active layer, and gate insulating layer, and form a transparent polypropylene film on the passivation layer.
  • the surface of the transparent polypropylene film formed in the step 3 is flat to form a flat layer, and the manufacturing method of the TFT substrate further includes:
  • Step 4 forming a first via corresponding to the drain on the flat layer and the passivation layer, forming a first electrode on the flat layer, the first electrode via the first via Contacting the drain;
  • the material of the active layer is indium gallium zinc oxide.
  • the base substrate is a glass substrate; the materials of the gate, the source, and the drain respectively include one or more of molybdenum, aluminum, copper, titanium, and chromium; the gate insulating layer and the passivation
  • the material of the layer includes one or more of silicon oxide and silicon nitride, respectively.
  • the step 4 further includes: sequentially forming an OLED light emitting layer and a second electrode from bottom to top in the second through hole; the first electrode and the second electrode are an anode and a cathode, respectively;
  • the materials of one electrode and the second electrode respectively include one or more of a metal and a transparent conductive metal oxide.
  • the present invention also provides a TFT substrate, comprising: a substrate, a gate disposed on the substrate, a gate insulating layer disposed on the gate and the substrate, and a gate An active layer on the insulating layer and corresponding to the gate, and a source and a drain disposed on the active layer and the gate insulating layer and respectively contacting the two sides of the active layer a passivation layer on the source, the drain, the active layer, and the gate insulating layer, and a transparent polypropylene film provided on the passivation layer.
  • the transparent polypropylene film has a flat surface and constitutes a flat layer
  • the TFT substrate further includes: a first through hole disposed on the flat layer and the passivation layer and corresponding to the drain, and disposed on the flat a first electrode on the layer, a pixel defining layer disposed on the first electrode and the flat layer, and a second via hole disposed on the pixel defining layer and corresponding to the first electrode; An electrode is in contact with the drain via the first via.
  • the material of the active layer is indium gallium zinc oxide.
  • the base substrate is a glass substrate; the materials of the gate, the source, and the drain respectively include one or more of molybdenum, aluminum, copper, titanium, and chromium; the gate insulating layer and the passivation
  • the material of the layer includes one or more of silicon oxide and silicon nitride, respectively.
  • the TFT substrate further includes: disposed in the second through hole and supported from bottom to top Between the OLED light-emitting layer and the second electrode; the first electrode and the second electrode are respectively an anode and a cathode; and the materials of the first electrode and the second electrode respectively comprise one of a metal and a transparent conductive metal oxide Kind or more.
  • the present invention also provides a TFT substrate, comprising: a substrate, a gate disposed on the substrate, a gate insulating layer disposed on the gate and the substrate, and a gate An active layer on the insulating layer and corresponding to the gate, and a source and a drain disposed on the active layer and the gate insulating layer and respectively contacting the two sides of the active layer a passivation layer on the source, the drain, the active layer, and the gate insulating layer, and a transparent polypropylene film disposed on the passivation layer;
  • the material of the active layer is indium gallium zinc oxide
  • the base substrate is a glass substrate; the materials of the gate, the source, and the drain respectively comprise one or more of molybdenum, aluminum, copper, titanium, and chromium; and the gate insulating layer and The material of the passivation layer includes one or more of silicon oxide and silicon nitride, respectively.
  • the present invention provides a method for fabricating a TFT substrate by adding a transparent polypropylene film over the IGZO active layer to shield UV light and prevent UV light from being applied to the IGZO active layer.
  • the stability of the film has an effect of improving the stability of the TFT device without adding a photomask.
  • the TFT substrate is fabricated by a back channel etch type IGZO-TFT structure, and is similar to the conventional etch barrier type IGZO-TFT structure. Compared with lithography, the production cost is low.
  • the TFT substrate provided by the invention has the function of shielding UV light by adding a transparent polypropylene film on the IGZO active layer, thereby improving the stability of the TFT device and having low production cost.
  • FIG. 1 is a flow chart showing a method of fabricating a TFT substrate of the present invention
  • step 1 is a schematic view of step 1 of a method of fabricating a TFT substrate of the present invention
  • FIG. 3 is a schematic view showing a step 2 of a method of fabricating a TFT substrate of the present invention
  • FIG. 4 is a schematic view of the step 3 of the method for fabricating the TFT substrate of the present invention and the present invention Schematic diagram of the structure of the TFT substrate;
  • FIG. 5 is a schematic view showing a step 4 of a method of fabricating a TFT substrate of the present invention and a schematic structural view of a preferred embodiment of the TFT substrate of the present invention.
  • the present invention first provides a method for fabricating a TFT substrate, including the following steps:
  • Step 1 as shown in FIG. 2, a base substrate 10 is provided, a gate electrode 11 is formed on the base substrate 10, and a gate insulating layer 12 is formed on the gate electrode 11 and the base substrate 10.
  • the base substrate 10 is a glass substrate.
  • the material of the gate electrode 11 includes one or more of molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), and chromium (Cr).
  • Mo molybdenum
  • Al aluminum
  • Cu copper
  • Ti titanium
  • Cr chromium
  • the material of the gate insulating layer 12 includes one or more of silicon oxide (SiO x ) and silicon nitride (SiN x ).
  • the material of the gate insulating layer 12 is silicon oxide.
  • a metal thin film is deposited by a physical vapor deposition method (PVD), and the metal thin film is patterned by a photolithography process to obtain the gate electrode 11.
  • PVD physical vapor deposition method
  • the gate insulating layer 12 is deposited by chemical vapor deposition (CVD).
  • Step 2 as shown in FIG. 3, an active layer 20 corresponding to the upper surface of the gate electrode 11 is formed on the gate insulating layer 12, and a source is formed on the active layer 20 and the gate insulating layer 12. 31 and the drain 32, the source 31 and the drain 32 are respectively in contact with both sides of the active layer 20.
  • the material of the active layer 20 is indium gallium zinc oxide (IGZO).
  • the materials of the source 31 and the drain 32 respectively include one or more of molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), and chromium (Cr).
  • Mo molybdenum
  • Al aluminum
  • Cu copper
  • Ti titanium
  • Cr chromium
  • a semiconductor layer is deposited by chemical vapor deposition (CVD), and the semiconductor layer is patterned by a photolithography process to obtain the active layer 20;
  • CVD chemical vapor deposition
  • Processes include coating photoresist, exposure, development, and dry etching processes.
  • a metal thin film is deposited by a physical vapor deposition method (PVD), and the metal thin film is patterned by a photolithography process to obtain the source 31 and the drain 32.
  • PVD physical vapor deposition method
  • Step 3 as shown in FIG. 4, the source 31, the drain 32, the active layer 20, and the gate are absolutely A passivation layer 40 is formed on the edge layer 12, and a transparent polypropylene film 41 is formed on the passivation layer 40.
  • the material of the passivation layer 40 includes one or more of silicon oxide (SiO x ) and silicon nitride (SiN x ).
  • the material of the passivation layer 40 is silicon oxide.
  • the passivation layer 40 is deposited by chemical vapor deposition (CVD).
  • the transparent polypropylene film 41 is formed by a coating process.
  • the transparent polypropylene film 41 Since the transparent polypropylene film 41 has excellent visible light transmittance and excellent UV light shielding property, the threshold voltage drift phenomenon of the IGZO-TFT under the influence of UV light and the external environment can be effectively prevented, and the stability of the TFT device is improved. And because the manufacturing process of the transparent polypropylene film 41 does not require the use of a photomask, the photolithography process is not increased, thereby effectively saving production costs.
  • the method for fabricating the TFT substrate of the present invention can be used to fabricate a TFT substrate in a liquid crystal display panel, and can also be used to fabricate a TFT substrate in an AMOLED display panel, and the method for fabricating the TFT substrate of the present invention is used to fabricate an AMOLED display panel.
  • the surface of the transparent polypropylene film 41 formed in the step 3 is flat to form the flat layer 50, and the method for fabricating the TFT substrate further includes:
  • Step 4 as shown in FIG. 5, a first via hole 51 corresponding to the upper surface of the drain electrode 32 is formed on the flat layer 50 and the passivation layer 40, and a first electrode 60 is formed on the flat layer 50, The first electrode 60 is in contact with the drain 32 via the first through hole 51;
  • a pixel defining layer 70 is formed on the first electrode 60 and the flat layer 50, and a second via hole 71 corresponding to the upper side of the first electrode 60 is formed on the pixel defining layer 70. So far, a TFT substrate applied to an AMOLED display panel has been obtained.
  • the step 4 may further include forming the OLED light emitting layer 80 and the second electrode 90 in order from the bottom to the top in the second through hole 71.
  • the first electrode 60 and the second electrode 90 are a cathode and an anode, respectively, or an anode and a cathode, respectively.
  • the materials of the first electrode 60 and the second electrode 90 respectively include one or more of a metal and a transparent conductive metal oxide.
  • the material of the pixel defining layer 70 is an organic photoresist material.
  • the first through hole 51 is formed by steps of exposure, development, and dry etching.
  • a conductive film is deposited by a physical vapor deposition method (PVD), and the conductive film is patterned by a photolithography process to obtain the first electrode 60.
  • PVD physical vapor deposition method
  • the pixel defining layer 70 is formed by a coating process, and the second via hole 71 is formed on the pixel defining layer 70 by an exposure and development process.
  • the OLED light emitting layer 80 is formed by an evaporation method.
  • a conductive film is deposited by a physical vapor deposition method (PVD), and the conductive film is patterned by a photolithography process to obtain the second electrode 90.
  • PVD physical vapor deposition method
  • the method for fabricating the above TFT substrate has a function of shielding UV light by adding a transparent polypropylene film on the IGZO active layer to prevent UV light from affecting the stability of the IGZO active layer without adding a mask.
  • the transparent polypropylene film can be used as a flat layer, thereby not changing the original process of the OLED display panel.
  • the process does not increase the process cost; in addition, the fabricated TFT substrate adopts a back channel etch type (BCE) IGZO-TFT structure, and the lithography process is compared with the conventional etch-stop type (ES) IGZO-TFT structure. Less, low production costs.
  • BCE back channel etch type
  • ES etch-stop type
  • the present invention further provides a TFT substrate, comprising: a substrate substrate 10, a gate electrode 11 disposed on the substrate substrate 10, and a gate electrode 11 disposed on the gate electrode 11 And the gate insulating layer 12 on the base substrate 10, the active layer 20 disposed on the gate insulating layer 12 and corresponding to the gate electrode 11, and the insulating layer 20 and the gate insulating layer A source 31 and a drain 32 on the layer 12 and respectively contacting the two sides of the active layer 20 are disposed on the source 31, the drain 32, the active layer 20, and the gate insulating layer 12.
  • the passivation layer 40 and the transparent polypropylene film 41 provided on the passivation layer 40.
  • the material of the active layer 20 is indium gallium zinc oxide (IGZO).
  • the transparent polypropylene film 41 has excellent visible light transmittance and excellent UV light shielding property, the threshold voltage drift phenomenon of the IGZO-TFT under the influence of UV light and the external environment can be effectively prevented, and the stability of the TFT device is improved. .
  • the TFT substrate of the present invention can be applied to a liquid crystal display panel or an AMOLED display panel.
  • the transparent polypropylene film 41 has a flat surface and is configured.
  • the flat layer 50 further includes: a first via hole 51 disposed on the flat layer 50 and the passivation layer 40 and corresponding to the drain 32, and a first via hole 51 disposed on the flat layer 50
  • the first electrode 60 is in contact with the drain 32 via the first via 51.
  • the TFT substrate may further include: an OLED light emitting layer 80 and a second electrode 90 which are disposed in the second through hole 71 and are stacked in this order from bottom to top.
  • the first electrode 60 and the second electrode 90 are a cathode and an anode, respectively, or an anode and a cathode, respectively.
  • the materials of the first electrode 60 and the second electrode 90 respectively include one or more of a metal and a transparent conductive metal oxide.
  • the material of the pixel defining layer 70 is an organic photoresist material.
  • the base substrate 10 is a glass substrate.
  • the materials of the gate 11, the source 31, and the drain 32 respectively include one of molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), and chromium (Cr). A variety.
  • the materials of the gate insulating layer 12 and the passivation layer 40 respectively include one or more of silicon oxide (SiO x ) and silicon nitride (SiN x ).
  • the material of the gate insulating layer 12 and the passivation layer 40 is silicon oxide.
  • the above TFT substrate has a function of shielding UV light by adding a transparent polypropylene film on the IGZO active layer to prevent UV light from affecting the stability of the IGZO active layer, without adding a photomask.
  • the stability of the TFT device is improved.
  • the transparent polypropylene film can be used as a flat layer, so that the original process of the OLED display panel is not changed, and the process cost is not increased;
  • the back channel etch type (BCE) IGZO-TFT structure has less lithography process and lower production cost than the conventional etch-stop type (ES) IGZO-TFT structure.
  • the present invention provides a TFT substrate and a method of fabricating the same.
  • the method for fabricating the TFT substrate of the present invention has a function of shielding UV light by adding a transparent polypropylene film on the IGZO active layer to prevent UV light from affecting the stability of the IGZO active layer, without increasing
  • the stability of the TFT device is improved on the basis of the photomask; when the TFT substrate manufacturing method of the present invention is applied to the production of the OLED display panel, the transparent polypropylene film can be used as a flat layer, so that the original OLED display panel is not changed.
  • the process technology does not increase the process cost; in addition, the fabricated TFT substrate adopts a back channel etch type IGZO-TFT structure, which has less lithography process and lower production cost than the conventional etch barrier type IGZO-TFT structure. low.
  • the TFT substrate of the present invention has a function of shielding UV light by adding a transparent polypropylene film over the IGZO active layer, thereby improving the stability of the TFT device and having a low production cost.

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  • Thin Film Transistor (AREA)

Abstract

一种TFT基板及其制作方法，通过在IGZO有源层（20）的上方增加一层透明聚丙烯薄膜（41），起到屏蔽UV光的作用，防止UV光对IGZO有源层（20）的稳定性产生影响，在不增加光罩的基础上提高了TFT器件的稳定性；透明聚丙烯薄膜（41）可作为平坦层使用，从而不改变OLED显示面板原有的制程工艺，不增加制程成本；制作的TFT基板采用背沟道刻蚀型的IGZO-TFT结构，与传统的刻蚀阻挡型的IGZO-TFT结构相比，光刻制程少，生产成本低。

Description

TFT基板及其制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种TFT基板及其制作方法。
背景技术
随着显示技术的发展，液晶显示器(Liquid Crystal Display，LCD)等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。
现有市场上的液晶显示装置大部分为背光型液晶显示器，其包括液晶显示面板及背光模组(backlight module)。液晶显示面板的工作原理是在两片平行的玻璃基板当中放置液晶分子，两片玻璃基板中间有许多垂直和水平的细小电线，通过通电与否来控制液晶分子改变方向，将背光模组的光线折射出来产生画面。
通常液晶显示面板由彩膜(CF，Color Filter)基板、薄膜晶体管(TFT，Thin Film Transistor)基板、夹于彩膜基板与薄膜晶体管基板之间的液晶(LC，Liquid Crystal)及密封胶框(Sealant)组成，其成型工艺一般包括：前段阵列(Array)制程(薄膜、黄光、蚀刻及剥膜)、中段成盒(Cell)制程(TFT基板与CF基板贴合)及后段模组组装制程(驱动IC与印刷电路板压合)。其中，前段Array制程主要是形成TFT基板，以便于控制液晶分子的运动；中段Cell制程主要是在TFT基板与CF基板之间添加液晶；后段模组组装制程主要是驱动IC压合与印刷电路板的整合，进而驱动液晶分子转动，显示图像。
有机发光二极管(Organic Light-Emitting Diode，OLED)显示器，也称为有机电致发光显示器，是一种新兴的平板显示装置，由于其具有制备工艺简单、成本低、功耗低、发光亮度高、工作温度适应范围广、体积轻薄、响应速度快，而且易于实现彩色显示和大屏幕显示、易于实现和集成电路驱动器相匹配、易于实现柔性显示等优点，因而具有广阔的应用前景。
OLED通常包括：基板、设于基板上的阳极、设于阳极上的空穴注入层、设于空穴注入层上的空穴传输层、设于空穴传输层上的发光层、设于发光层上的电子传输层、设于电子传输层上的电子注入层、及设于电子注入层上的阴极。OLED显示器件的发光原理为半导体材料和有机发光材料 在电场驱动下，通过载流子注入和复合导致发光。具体的，OLED显示器件通常采用ITO像素电极和金属电极分别作为器件的阳极和阴极，在一定电压驱动下，电子和空穴分别从阴极和阳极注入到电子传输层和空穴传输层，电子和空穴分别经过电子传输层和空穴传输层迁移到发光层，并在发光层中相遇，形成激子并使发光分子激发，后者经过辐射弛豫而发出可见光。
OLED按照驱动方式可以分为无源矩阵型OLED(Passive Matrix OLED，PMOLED)和有源矩阵型OLED(Active Matrix OLED，AMOLED)两大类，即直接寻址和薄膜晶体管矩阵寻址两类。其中，AMOLED具有呈阵列式排布的像素，属于主动显示类型，发光效能高，通常用作高清晰度的大尺寸显示装置。
薄膜晶体管(TFT)是目前液晶显示装置和有源矩阵驱动式有机电致发光显示装置中的主要驱动元件，直接关系到高性能平板显示装置的发展方向。铟镓锌氧化物(IGZO)由于具有高迁移率、适用于大面积生产、易于由非晶硅(a-Si)制程转换等优势，成为目前薄膜晶体管技术领域内的研究热点。但IGZO-TFT中的IGZO有源层对于工艺和环境非常敏感，常常需要采用刻蚀阻挡层(ES)结构并增加一道光罩(Mask)对IGZO有源层进行保护，不利于TFT制程成本的降低；同时由于源漏极(SD)与刻蚀阻挡层(ES)之间的堆叠，使得TFT器件的沟道尺寸较大，寄生电容也较大。另外，由于IGZO的禁带宽度(约为3.4eV)与紫外(UV)光的禁带宽度(高于3.1eV)相近，IGZO对UV光有很好的吸收作用，IGZO有源层在UV光的照射下，价带电子等易吸收能量跃迁至导带，使TFT的阈值电压偏移，造成显示器显示效果不稳定。
发明内容
本发明的目的在于提供一种TFT基板的制作方法，能够提高TFT器件的稳定性，且生产成本低。
本发明的目的还在于提供一种TFT基板，TFT器件的稳定性好，且生产成本低。
为实现上述目的，本发明提供一种TFT基板的制作方法，包括如下步骤：
步骤1、提供一衬底基板，在所述衬底基板上形成栅极，在所述栅极与衬底基板上形成栅极绝缘层；
步骤2、在所述栅极绝缘层上形成对应于所述栅极上方的有源层，在所 述有源层与栅极绝缘层上形成源极与漏极，所述源极与漏极分别与所述有源层的两侧相接触；
步骤3、在所述源极、漏极、有源层、及栅极绝缘层上形成钝化层，在所述钝化层上形成透明聚丙烯薄膜。
所述步骤3中形成的透明聚丙烯薄膜表面平坦，构成平坦层，并且，所述TFT基板的制作方法还包括：
步骤4、在所述平坦层与钝化层上形成对应于所述漏极上方的第一通孔，在所述平坦层上形成第一电极，所述第一电极经由所述第一通孔与所述漏极相接触；
在所述第一电极与平坦层上形成像素定义层，在所述像素定义层上形成对应于所述第一电极上方的第二通孔。
所述有源层的材料为铟镓锌氧化物。
所述衬底基板为玻璃基板；所述栅极、源极、及漏极的材料分别包括钼、铝、铜、钛、铬中的一种或多种；所述栅极绝缘层与钝化层的材料分别包括氧化硅与氮化硅中的一种或多种。
进一步的，所述步骤4还包括：在所述第二通孔内从下到上依次形成OLED发光层与第二电极；所述第一电极与第二电极分别为阳极与阴极；所述第一电极与第二电极的材料分别包括金属与透明导电金属氧化物中的一种或多种。
本发明还提供一种TFT基板，包括：衬底基板、设于所述衬底基板上的栅极、设于所述栅极与衬底基板上的栅极绝缘层、设于所述栅极绝缘层上且对应于所述栅极上方的有源层、设于所述有源层与栅极绝缘层上且分别与所述有源层的两侧相接触的源极与漏极、设于所述源极、漏极、有源层、及栅极绝缘层上的钝化层、以及设于所述钝化层上的透明聚丙烯薄膜。
所述透明聚丙烯薄膜表面平坦，构成平坦层，所述TFT基板还包括：设于所述平坦层与钝化层上且对应于所述漏极上方的第一通孔、设于所述平坦层上的第一电极、设于所述第一电极与平坦层上的像素定义层、以及设于所述像素定义层上且对应于所述第一电极上方的第二通孔；所述第一电极经由所述第一通孔与所述漏极相接触。
所述有源层的材料为铟镓锌氧化物。
所述衬底基板为玻璃基板；所述栅极、源极、及漏极的材料分别包括钼、铝、铜、钛、铬中的一种或多种；所述栅极绝缘层与钝化层的材料分别包括氧化硅与氮化硅中的一种或多种。
进一步的，所述TFT基板还包括：设于所述第二通孔内且从下到上依 次层叠设置的OLED发光层与第二电极；所述第一电极与第二电极分别为阳极与阴极；所述第一电极与第二电极的材料分别包括金属与透明导电金属氧化物中的一种或多种。
本发明还提供一种TFT基板，包括：衬底基板、设于所述衬底基板上的栅极、设于所述栅极与衬底基板上的栅极绝缘层、设于所述栅极绝缘层上且对应于所述栅极上方的有源层、设于所述有源层与栅极绝缘层上且分别与所述有源层的两侧相接触的源极与漏极、设于所述源极、漏极、有源层、及栅极绝缘层上的钝化层、以及设于所述钝化层上的透明聚丙烯薄膜；
其中，所述有源层的材料为铟镓锌氧化物；
其中，所述衬底基板为玻璃基板；所述栅极、源极、及漏极的材料分别包括钼、铝、铜、钛、铬中的一种或多种；所述栅极绝缘层与钝化层的材料分别包括氧化硅与氮化硅中的一种或多种。
本发明的有益效果：本发明提供的一种TFT基板的制作方法，通过在IGZO有源层的上方增加一层透明聚丙烯薄膜，起到屏蔽UV光的作用，防止UV光对IGZO有源层的稳定性产生影响，在不增加光罩的基础上提高了TFT器件的稳定性；本发明的TFT基板的制作方法应用于OLED显示面板的生产时，所述透明聚丙烯薄膜可作为平坦层使用，从而不改变OLED显示面板原有的制程工艺，不增加制程成本；另外，制作的TFT基板采用背沟道刻蚀型的IGZO-TFT结构，与传统的刻蚀阻挡型的IGZO-TFT结构相比，光刻制程少，生产成本低。本发明提供的一种TFT基板，通过在IGZO有源层的上方增加一层透明聚丙烯薄膜，起到屏蔽UV光的作用，提高了TFT器件的稳定性，且生产成本低。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为本发明的TFT基板的制作方法的流程图；
图2为本发明的TFT基板的制作方法的步骤1的示意图；
图3为本发明的TFT基板的制作方法的步骤2的示意图；
图4为本发明的TFT基板的制作方法的步骤3的示意图暨本发明的 TFT基板的结构示意图；
图5为本发明的TFT基板的制作方法的步骤4的示意图暨本发明的TFT基板的优选实施例的结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明首先提供一种TFT基板的制作方法，包括如下步骤：
步骤1、如图2所示，提供一衬底基板10，在所述衬底基板10上形成栅极11，在所述栅极11与衬底基板10上形成栅极绝缘层12。
具体的，所述衬底基板10为玻璃基板。
具体的，所述栅极11的材料包括钼(Mo)、铝(Al)、铜(Cu)、钛(Ti)、铬(Cr)中的一种或多种。
具体的，所述栅极绝缘层12的材料包括氧化硅(SiOx)与氮化硅(SiNx)中的一种或多种。优选的，所述栅极绝缘层12的材料为氧化硅。
具体的，所述步骤1中，采用物理气相沉积方法(PVD)沉积一金属薄膜，采用光刻工艺对所述金属薄膜进行图形化处理后，得到所述栅极11。
具体的，所述步骤1中，采用化学气相沉积方法(CVD)沉积得到所述栅极绝缘层12。
步骤2、如图3所示，在所述栅极绝缘层12上形成对应于所述栅极11上方的有源层20，在所述有源层20与栅极绝缘层12上形成源极31与漏极32，所述源极31与漏极32分别与所述有源层20的两侧相接触。
具体的，所述有源层20的材料为铟镓锌氧化物(IGZO)。
具体的，所述源极31与漏极32的材料分别包括钼(Mo)、铝(Al)、铜(Cu)、钛(Ti)、铬(Cr)中的一种或多种。
具体的，所述步骤2中，采用化学气相沉积方法(CVD)沉积得到一半导体层，采用光刻工艺对所述半导体层进行图形化处理后，得到所述有源层20；所述光刻工艺包括涂布(coating)光刻胶、曝光、显影、及干法刻蚀制程。
具体的，所述步骤2中，采用物理气相沉积方法(PVD)沉积一金属薄膜，采用光刻工艺对所述金属薄膜进行图形化处理后，得到所述源极31与漏极32。
步骤3、如图4所示，在所述源极31、漏极32、有源层20、及栅极绝 缘层12上形成钝化层40，在所述钝化层40上形成透明聚丙烯薄膜41。
具体的，所述钝化层40的材料包括氧化硅(SiOx)与氮化硅(SiNx)中的一种或多种。优选的，所述钝化层40的材料为氧化硅。
具体的，所述步骤3中，采用化学气相沉积方法(CVD)沉积得到所述钝化层40。
具体的，所述步骤3中，采用涂布(coating)工艺形成所述透明聚丙烯薄膜41。
由于所述透明聚丙烯薄膜41具有优异的可见光透过性和优秀的UV光屏蔽特性，可有效防止IGZO-TFT在UV光和外界环境的影响下发生阈值电压漂移现象，提高TFT器件的稳定性；并且由于所述透明聚丙烯薄膜41的制作过程不需要使用光罩，不增加光刻制程，从而有效节约生产成本。
具体的，本发明的TFT基板的制作方法可用于制作液晶显示面板中的TFT基板，也可以用于制作AMOLED显示面板中的TFT基板，当本发明的TFT基板的制作方法用于制作AMOLED显示面板中的TFT基板时，所述步骤3中形成的透明聚丙烯薄膜41表面平坦，构成平坦层50，并且，所述TFT基板的制作方法还包括：
步骤4、如图5所示，在所述平坦层50与钝化层40上形成对应于所述漏极32上方的第一通孔51，在所述平坦层50上形成第一电极60，所述第一电极60经由所述第一通孔51与所述漏极32相接触；
在所述第一电极60与平坦层50上形成像素定义层70，在所述像素定义层70上形成对应于所述第一电极60上方的第二通孔71。至此，得到一应用于AMOLED显示面板中的TFT基板。
进一步的，所述步骤4还可以包括：在所述第二通孔71内从下到上依次形成OLED发光层80与第二电极90。
具体的，所述第一电极60与第二电极90分别为阴极与阳极或者分别为阳极与阴极。
具体的，所述第一电极60与第二电极90的材料分别包括金属与透明导电金属氧化物中的一种或多种。
具体的，所述像素定义层70的材料为有机光阻材料。
具体的，所述步骤4中，通过曝光、显影、及干法刻蚀等步骤形成所述第一通孔51。
具体的，所述步骤4中，采用物理气相沉积方法(PVD)沉积一导电薄膜，采用光刻工艺对所述导电薄膜进行图形化处理后，得到所述第一电极60。
具体的，所述步骤4中，采用涂布(coating)工艺形成所述像素定义层70，并采用曝光、显影制程在所述像素定义层70上形成所述第二通孔71。
具体的，所述步骤4中，采用蒸镀方法形成所述OLED发光层80。
具体的，所述步骤4中，采用物理气相沉积方法(PVD)沉积一导电薄膜，采用光刻工艺对所述导电薄膜进行图形化处理后，得到所述第二电极90。
上述TFT基板的制作方法，通过在IGZO有源层的上方增加一层透明聚丙烯薄膜，起到屏蔽UV光的作用，防止UV光对IGZO有源层的稳定性产生影响，在不增加光罩的基础上提高了TFT器件的稳定性；本发明的TFT基板的制作方法应用于OLED显示面板的生产时，所述透明聚丙烯薄膜可作为平坦层使用，从而不改变OLED显示面板原有的制程工艺，不增加制程成本；另外，制作的TFT基板采用背沟道刻蚀型(BCE)的IGZO-TFT结构，与传统的刻蚀阻挡型(ES)的IGZO-TFT结构相比，光刻制程少，生产成本低。
请参阅图4，基于上述TFT基板的制作方法，本发明还提供一种TFT基板，包括：衬底基板10、设于所述衬底基板10上的栅极11、设于所述栅极11与衬底基板10上的栅极绝缘层12、设于所述栅极绝缘层12上且对应于所述栅极11上方的有源层20、设于所述有源层20与栅极绝缘层12上且分别与所述有源层20的两侧相接触的源极31与漏极32、设于所述源极31、漏极32、有源层20、及栅极绝缘层12上的钝化层40、以及设于所述钝化层40上的透明聚丙烯薄膜41。
具体的，所述有源层20的材料为铟镓锌氧化物(IGZO)。
由于所述透明聚丙烯薄膜41具有优异的可见光透过性和优秀的UV光屏蔽特性，可有效防止IGZO-TFT在UV光和外界环境的影响下发生阈值电压漂移现象，提高TFT器件的稳定性。
具体的，本发明的TFT基板可应用于液晶显示面板或者AMOLED显示面板中，请参阅图5，当本发明的TFT基板应用于AMOLED显示面板中时，所述透明聚丙烯薄膜41表面平坦，构成平坦层50，所述TFT基板还包括：设于所述平坦层50与钝化层40上且对应于所述漏极32上方的第一通孔51、设于所述平坦层50上的第一电极60、设于所述第一电极60与平坦层50上的像素定义层70、以及设于所述像素定义层70上且对应于所述第一电极60上方的第二通孔71；所述第一电极60经由所述第一通孔51与所述漏极32相接触。
进一步的，所述TFT基板还可以包括：设于所述第二通孔71内且从下到上依次层叠设置的OLED发光层80与第二电极90。
具体的，所述第一电极60与第二电极90分别为阴极与阳极或者分别为阳极与阴极。所述第一电极60与第二电极90的材料分别包括金属与透明导电金属氧化物中的一种或多种。
具体的，所述像素定义层70的材料为有机光阻材料。
具体的，所述衬底基板10为玻璃基板。
具体的，所述栅极11、源极31、及漏极32的材料分别包括钼(Mo)、铝(Al)、铜(Cu)、钛(Ti)、铬(Cr)中的一种或多种。
具体的，所述栅极绝缘层12与钝化层40的材料分别包括氧化硅(SiOx)与氮化硅(SiNx)中的一种或多种。优选的，所述栅极绝缘层12与钝化层40的材料均为氧化硅。
上述TFT基板，通过在IGZO有源层的上方增加一层透明聚丙烯薄膜，起到屏蔽UV光的作用，防止UV光对IGZO有源层的稳定性产生影响，在不增加光罩的基础上提高了TFT器件的稳定性；本发明的TFT基板应用于OLED显示面板时，所述透明聚丙烯薄膜可作为平坦层使用，从而不改变OLED显示面板原有的制程工艺，不增加制程成本；另外，采用背沟道刻蚀型(BCE)的IGZO-TFT结构，与传统的刻蚀阻挡型(ES)的IGZO-TFT结构相比，光刻制程少，生产成本低。
综上所述，本发明提供一种TFT基板及其制作方法。本发明的TFT基板的制作方法，通过在IGZO有源层的上方增加一层透明聚丙烯薄膜，起到屏蔽UV光的作用，防止UV光对IGZO有源层的稳定性产生影响，在不增加光罩的基础上提高了TFT器件的稳定性；本发明的TFT基板的制作方法应用于OLED显示面板的生产时，所述透明聚丙烯薄膜可作为平坦层使用，从而不改变OLED显示面板原有的制程工艺，不增加制程成本；另外，制作的TFT基板采用背沟道刻蚀型的IGZO-TFT结构，与传统的刻蚀阻挡型的IGZO-TFT结构相比，光刻制程少，生产成本低。本发明的TFT基板，通过在IGZO有源层的上方增加一层透明聚丙烯薄膜，起到屏蔽UV光的作用，提高了TFT器件的稳定性，且生产成本低。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (13)

  1. 一种TFT基板的制作方法，包括如下步骤：
    步骤1、提供一衬底基板，在所述衬底基板上形成栅极，在所述栅极与衬底基板上形成栅极绝缘层；
    步骤2、在所述栅极绝缘层上形成对应于所述栅极上方的有源层，在所述有源层与栅极绝缘层上形成源极与漏极，所述源极与漏极分别与所述有源层的两侧相接触；
    步骤3、在所述源极、漏极、有源层、及栅极绝缘层上形成钝化层，在所述钝化层上形成透明聚丙烯薄膜。
  2. 如权利要求1所述的TFT基板的制作方法，其中，所述步骤3中形成的透明聚丙烯薄膜表面平坦，构成平坦层，并且，所述TFT基板的制作方法还包括：
    步骤4、在所述平坦层与钝化层上形成对应于所述漏极上方的第一通孔，在所述平坦层上形成第一电极，所述第一电极经由所述第一通孔与所述漏极相接触；
    在所述第一电极与平坦层上形成像素定义层，在所述像素定义层上形成对应于所述第一电极上方的第二通孔。
  3. 如权利要求1所述的TFT基板的制作方法，其中，所述有源层的材料为铟镓锌氧化物。
  4. 如权利要求1所述的TFT基板的制作方法，其中，所述衬底基板为玻璃基板；所述栅极、源极、及漏极的材料分别包括钼、铝、铜、钛、铬中的一种或多种；所述栅极绝缘层与钝化层的材料分别包括氧化硅与氮化硅中的一种或多种。
  5. 如权利要求2所述的TFT基板的制作方法，其中，所述步骤4还包括：在所述第二通孔内从下到上依次形成OLED发光层与第二电极；所述第一电极与第二电极分别为阳极与阴极；所述第一电极与第二电极的材料分别包括金属与透明导电金属氧化物中的一种或多种。
  6. 一种TFT基板，包括：衬底基板、设于所述衬底基板上的栅极、设于所述栅极与衬底基板上的栅极绝缘层、设于所述栅极绝缘层上且对应于所述栅极上方的有源层、设于所述有源层与栅极绝缘层上且分别与所述有源层的两侧相接触的源极与漏极、设于所述源极、漏极、有源层、及栅极绝缘层上的钝化层、以及设于所述钝化层上的透明聚丙烯薄膜。
  7. 如权利要求6所述的TFT基板，其中，所述透明聚丙烯薄膜表面平坦，构成平坦层，所述TFT基板还包括：设于所述平坦层与钝化层上且对应于所述漏极上方的第一通孔、设于所述平坦层上的第一电极、设于所述第一电极与平坦层上的像素定义层、以及设于所述像素定义层上且对应于所述第一电极上方的第二通孔；所述第一电极经由所述第一通孔与所述漏极相接触。
  8. 如权利要求6所述的TFT基板，其中，所述有源层的材料为铟镓锌氧化物。
  9. 如权利要求6所述的TFT基板，其中，所述衬底基板为玻璃基板；所述栅极、源极、及漏极的材料分别包括钼、铝、铜、钛、铬中的一种或多种；所述栅极绝缘层与钝化层的材料分别包括氧化硅与氮化硅中的一种或多种。
  10. 如权利要求7所述的TFT基板，还包括：设于所述第二通孔内且从下到上依次层叠设置的OLED发光层与第二电极；所述第一电极与第二电极分别为阳极与阴极；所述第一电极与第二电极的材料分别包括金属与透明导电金属氧化物中的一种或多种。
  11. 一种TFT基板，包括：衬底基板、设于所述衬底基板上的栅极、设于所述栅极与衬底基板上的栅极绝缘层、设于所述栅极绝缘层上且对应于所述栅极上方的有源层、设于所述有源层与栅极绝缘层上且分别与所述有源层的两侧相接触的源极与漏极、设于所述源极、漏极、有源层、及栅极绝缘层上的钝化层、以及设于所述钝化层上的透明聚丙烯薄膜；
    其中，所述有源层的材料为铟镓锌氧化物；
    其中，所述衬底基板为玻璃基板；所述栅极、源极、及漏极的材料分别包括钼、铝、铜、钛、铬中的一种或多种；所述栅极绝缘层与钝化层的材料分别包括氧化硅与氮化硅中的一种或多种。
  12. 如权利要求11所述的TFT基板，其中，所述透明聚丙烯薄膜表面平坦，构成平坦层，所述TFT基板还包括：设于所述平坦层与钝化层上且对应于所述漏极上方的第一通孔、设于所述平坦层上的第一电极、设于所述第一电极与平坦层上的像素定义层、以及设于所述像素定义层上且对应于所述第一电极上方的第二通孔；所述第一电极经由所述第一通孔与所述漏极相接触。
  13. 如权利要求12所述的TFT基板，还包括：设于所述第二通孔内且从下到上依次层叠设置的OLED发光层与第二电极；所述第一电极与第二电极分别为阳极与阴极；所述第一电极与第二电极的材料分别包括金属与 透明导电金属氧化物中的一种或多种。
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