WO2018082214A1 - 脊条形半导体激光器有源区腔体侧壁钝化的优化方法 - Google Patents

脊条形半导体激光器有源区腔体侧壁钝化的优化方法 Download PDF

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WO2018082214A1
WO2018082214A1 PCT/CN2017/072084 CN2017072084W WO2018082214A1 WO 2018082214 A1 WO2018082214 A1 WO 2018082214A1 CN 2017072084 W CN2017072084 W CN 2017072084W WO 2018082214 A1 WO2018082214 A1 WO 2018082214A1
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ridge
layer
etching
semiconductor laser
sio
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王瑾
郑新和
刘三姐
侯彩霞
何荧峰
李美玲
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北京科技大学
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers

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  • the invention relates to the field of semiconductor technology, in particular to an optimization method for sidewall passivation of an active region cavity of a ridge strip semiconductor laser.
  • the working principle of the semiconductor laser is to generate a sufficient gain by the inversion of the distribution of the number of particles, so that the stimulated radiation is larger than the absorption, and the light gain is generated.
  • the generated light is reflected in the front and back of the cavity to a certain intensity and then emitted to form a laser.
  • One of the current mainstream laser structures is a strip laser.
  • the strip structure used for the limitation of carriers and photons in the active region in the junction plane direction (lateral direction) is an important milestone in the history of semiconductor laser development.
  • the strip laser is fabricated in a strip-parallel structure parallel to the plane of the pn junction, so that carriers can be confined in both directions parallel and perpendicular to the plane of the pn junction, and optical gain is generated to establish a stable A laser that oscillates light.
  • the strip laser has a light wave confinement and a carrier confinement mechanism laterally in the junction plane, which is relative to the wide contact.
  • the strip structure greatly reduces the threshold current of the laser, improves the near-field and far-field, longitudinal mode and transverse mode, and improves the reliability of the device.
  • the earliest strip lasers used electrode strips or proton bombardment strips.
  • the lateral optical limitation is the so-called "gain waveguide". Essentially, it only limits the path through which current flows, and this limitation inevitably involves lateral expansion of the injected current and lateral diffusion of the injected carriers.
  • Cavity wall defect is an important issue for high-power long-life semiconductor lasers.
  • semiconductor edge-emitting lasers there are a large number of dangling bonds on the cavity wall after cleavage or ion beam etching, and many surface non-radiative recombination centers or energy levels are generated in the forbidden band, which will seriously affect the working life of the laser. Therefore, how to reduce the cavity wall degradation or perform better cavity wall passivation protection is an urgent problem for high-power long-life semiconductor lasers.
  • the laser cavity wall is formed by ion beam etching, and ion damage and nitrogen vacancy defects are generated during ion beam etching. These defects form dangling bonds and surface recombination on the surface. center. Therefore, there are more defects such as point defects and surface recombination centers on the side of the laser. In addition, a large amount of oxygen impurities are present on the surface and a new surface non-composite level is induced.
  • the mainstream manufacturing process of the laser ridge structure is to first etch a ridge above the active region by dry etching, and plating it around the ridge by magnetron sputtering or ion beam evaporation.
  • An upper layer of oxygen usually SiO 2
  • SiO 2 is used to confine current through the insulating layer to the current path from the ridge to the active layer.
  • the present invention proposes a method of inserting a thin Al film layer for passivation optimization before passivating SiO 2 .
  • the method utilizes the Al-O bond to have a shorter bond length than the Ga-O bond, and the bond energy is larger, so that the Al film can absorb the O attached to the etched surface and reduce the impurity level.
  • the Al film can repair damage caused by plasma bombardment when etching the ridge structure.
  • the Al film is oxidized to an aluminum oxide film soon after deposition, which avoids the secondary damage to the GaN etched surface when SiO 2 is deposited, and since the aluminum oxide is an insulator, leakage can be reduced.
  • the use of this method can effectively repair the surface damage introduced by etching and the influence of the O element attached to the surface after etching on the recombination of electrons and holes, and the oxide layer formed by oxidation can also protect the P-GaN portion. Effectively improve laser performance and life.
  • the technical problem to be solved by the present invention is to provide an optimized method for sidewall passivation of an active region cavity of a ridge strip-shaped semiconductor laser.
  • This method can better reduce the ridge portion of the GaN due to the conventional process.
  • step (3) depositing a layer of SiO 2 directly on the product obtained in step (2);
  • the ridge strip formed in the step (1) is a resonant cavity for generating laser light
  • the etching technique used in the step (1) is an ICP-RIE dry etching technique.
  • the coating technique for depositing a thin layer of Al in the step (2) includes ALD, electron beam deposition, and thermal evaporation deposition; the thin layer of Al plated is grown on the sidewall of the ridge strip structure and the lower portion of the entire SiO 2 layer.
  • the temperature of depositing the Al thin layer is 300 ° C, and the thickness of the deposited Al thin layer is 5-50 nm.
  • the present invention adjusts the process steps on the basis of the conventional process, and adds a layer of Al between the etched surface and SiO 2 .
  • This approach has the following three advantages:
  • the bonding ability of Al and O is stronger, and the O in the surface oxide layer of GaN after dry etching can be adsorbed.
  • O as an impurity level can bind carriers and reduce the composite luminous efficiency of electron holes.
  • the O impurity in the GaN can be reduced, and the laser light-emitting capability is increased;
  • the Al layer can be combined with the dangling bond of the etched GaN surface to repair the etch damage of the GaN surface and reduce the negative influence of the GaN surface state on the composite;
  • the Al layer is quickly oxidized to Al 2 O 3 .
  • the dense Al 2 O 3 layer can block the bombardment of the GaN surface by the plasma when SiO 2 is applied, and protect the ridge cavity, and the Al layer itself is deposited by ALD. Going up, the damage to GaN is minimal.
  • FIG. 1 is a schematic flow chart of an optimization method for sidewall passivation of an active region cavity of a ridge strip semiconductor laser according to the present invention
  • FIG. 2 is a process flow diagram of an optimization method for sidewall passivation of an active region cavity of a ridge strip semiconductor laser according to the present invention.
  • 1-P type semiconductor 2-multiple quantum well structure; 3-N type cladding layer; 4-N type semiconductor; 5-substrate; 6-ohm contact metal; 7-resist; 8-aluminum thin layer 9-SiO 2 layer; 10-extended electrode.
  • the structure of a conventional ridge-shaped semiconductor laser is such that a SiO 2 layer is directly plated on the sidewall of the ridge strip, and as a confinement layer, current is confined in the current path from the ridge to the active layer, and the threshold current is lowered. Since the exposed GaN surface is inevitably oxidized before SiO 2 plating, and the damage caused by dry etching on the GaN surface cannot be effectively repaired, the SiO 2 plating also introduces new damage. Therefore, there is room for further improvement in the light-emitting capability of the laser.
  • the present invention provides an optimized method for sidewall passivation of an active region cavity of a ridge strip semiconductor laser.
  • the sample layer before treatment is in order from the outside to the inside: P-type semiconductor 1, multiple quantum well structure 2, N-type cladding layer 3, N-type semiconductor 4, substrate 5, after ohmic contact metal 6 has been plated by magnetron sputtering
  • P-GaN active region ridge strip is etched, that is, a resonant cavity for generating a laser;
  • the sample is first thoroughly cleaned and then etched using the photoresist as a mask, specifically including: drying at 100 ° C for 10 minutes to remove moisture adsorbed on the surface of the sample; coating, pre-baking, Exposure, development, to obtain a photoresist 7 mask having a thickness of about 1.2 ⁇ m present only over the ridges to be etched.
  • the photoresist 7 is removed by a plasma stripper, the sample is placed in an inductively coupled plasma (ICP) etch machine for GaN etching.
  • the process gas contains Cl 2 and BCl 3 , and the power of the ICP source and the sample stage biased RF source are 500 W and 300 W, respectively, and the etching depth is about 500 nm.
  • the temperature of the sample stage is raised to 300 ° C, using trimethyl aluminum TMA as the aluminum precursor, using hydrogen as the reducing agent, the growth parameters are set as follows: 1.
  • High purity argon gas carries TMA into the deposition chamber for 2.5 s; 2 , argon cleaning for 5s; 3, hydrogen reduction for 15s, 4, argon cleaning for 5s.
  • the ALD cycle is 50 to 500 cycles and the thickness is about 5 to 50 nm. The actual deposition thickness depends on the specific experiment.
  • step (3) depositing a layer of SiO 2 directly on the product obtained in step (2); specifically:
  • the sample obtained in the step (2) was immersed in deionized water for 2 minutes, blown dry with nitrogen, and SiO 2 layer 9 of about 100 nm was deposited by ICP-CVD.
  • step (3) stripping the product obtained in the step (3) to a photoresist such that a thin layer of Al is plated between the exposed surface and the SiO 2 layer; in this step, ultrasonic cleaning with acetone is performed for 5 minutes, and then It was heated with an NMP hot plate at 140 ° C for 20 minutes, ultrasonically washed with isopropyl alcohol for five minutes, and then washed with deionized water to dry.
  • steps (1) - (d) standard lithography steps for N-type area fenestration and plating extended electrode 10 process operations.
  • the N-type window is etched down to expose the N-type region by IBE, and the extension electrode 10 is plated with Ti/Pt/Au: 50/100/50 nm by magnetron sputtering.
  • the coating technique for depositing a thin layer of Al in the step (2) includes ALD, electron beam deposition, and thermal evaporation deposition; the thin layer of Al plated is grown on the sidewall of the ridge strip structure and the lower portion of the entire SiO 2 layer.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

提供了一种脊条形半导体激光器有源区腔体侧壁钝化的优化方法，属于半导体工艺领域。该方法通过对GaN样品进行刻蚀，形成P-GaN有源区脊条，在不进行去胶步骤的情况下直接使用ALD沉积一层Al薄层；再沉积一层SiO 2；然后剥离光刻胶，使全部被刻蚀露出的表面与SiO 2层之间都镀上一层Al薄层；最后，重复以上标准光刻步骤进行N型区域开窗以及镀扩展电极等工艺操作。该方法可以有效修复因刻蚀引入的表面损伤和刻蚀之后表面附着的O元素对于电子和空穴复合的影响，氧化形成的氧化层还能保护P-GaN部分，有效提高激光器性能与寿命。

Description

脊条形半导体激光器有源区腔体侧壁钝化的优化方法 技术领域
本发明涉及半导体工艺领域，特别是指一种脊条形半导体激光器有源区腔体侧壁钝化的优化方法。
背景技术
半导体激光器的工作原理是通过产生足够的粒子数分布的反转，使受激辐射大于吸收，产生光增益，产生的光在谐振腔前后面内反射达到一定强度后出射形成激光。目前主流的激光器结构之一就是条形激光器。针对有源区的载流子和光子在结平面方向(侧向)的限制问题而采用的条形结构，是半导体激光器发展史上的一个重要里程碑。条形激光器是在平行于pn结平面的方向上，制造出条形的结构，使平行和垂直于pn结平面的两个方向上都能限制载流子，并产生光增益，建立起稳定的光振荡的激光器。条形激光器在结平面侧向具有光波限制和载流子限制机制，它是相对于宽接触而言的。条形结构使激光器的阈值电流大幅度降低，改善了近场与远场、纵模与横模特性，提高了器件的可靠性等。
最早的条型激光器是采取电极条形或质子轰击条形。在侧向的光学限制为所谓的“增益波导”。实质上，它只是限制电流流经的通道，这种限制不可避免地存在注入电流的侧向扩展和注入载流子的侧向扩散。
腔壁性能衰退(facet degradation)是大功率长寿命半导体激光器面临的一个重要问题。对半导体边发射激光器，经解理或离子束刻蚀后的腔壁上存在大量的悬挂键，在禁带中产生许多表面非辐射复合中心或能级，将严重影响激光器的工作寿命。因此，如何减少腔壁衰退或进行更好的腔壁钝化保护是大功率长寿命半导体激光器刻不容缓的问题。
在GaN基蓝绿光激光器中，需经离子束刻蚀形成激光器共振腔壁，在离子束刻蚀过程中将产生离子损伤和氮空位点缺陷等，这些点缺陷在表面形成悬挂键和表面复合中心。因此，激光器的侧面上会有更多的点缺陷和表面复合中心等缺陷。另外，表面存在大量的氧杂质，并诱发新的表面非复合能级。虽然这些缺陷可以经后续的SiO2进行表面钝化改善，但是由于沉积SiO2时存在大量的离子，对激光器腔壁产生进一步的损伤，增加表面非辐射复合中心并加速腔壁性能的衰减。
目前，主流的制造激光器脊条结构的制作工艺是先通过干法刻蚀技术在有源区上方向下刻蚀出一个脊，在脊侧面周围通过磁控溅射或离子束蒸镀等技术镀上一层氧绝缘层(一般是SiO2)，通过绝缘层使电流限制在从脊到有源层的电流通道内。根据这一工艺过程，存在以下的问题，即这种方法会使干法刻蚀之后产生的GaN截面上面的氧化层被SiO2覆盖，而且刻蚀造成的损伤和悬挂键等缺陷得不到修复，会对激光器性能造成不利影响。为避免或解决上述问题，本发明提出了一种钝化SiO2之前插入一薄Al膜层进行钝化优化的方法。该方法利用了Al-O键相比于Ga-O键的键长更短，键能更大，因此Al膜可以吸出附着在刻蚀表面的O，减少杂质能级。而且Al膜可以修复在刻蚀脊条结构时由于等离子体轰击造成的损伤。Al膜在沉积之后很快会被氧化成氧化铝薄膜，这样可以避免沉积SiO2时对GaN刻蚀表面造成二次伤害的作用，同时由于氧化铝是绝缘体，所以可以减少漏电。综上所述，使用这种方法可以有效修复因刻蚀引入的表面损伤和刻蚀之后表面附着的O元素对于电子和空穴复合的影响，氧化形成的氧化层还能保护P-GaN部分，有效提高激光器性能与寿命。
发明内容
本发明要解决的技术问题是提供一种脊条形半导体激光器有源区腔体侧壁钝化的优化方法，该方法在传统工艺的基础上，可以较好地减少脊条部分GaN中由于被氧化而造成的复合效率降低的影响， 修复刻蚀脊条时造成的刻蚀损伤和表面悬挂键，提高器件性能。
该方法具体步骤如下：
(一)对GaN样品进行刻蚀，形成P-GaN有源区脊条；
(二)在不进行去胶步骤的情况下，在步骤(一)所得产品上直接沉积一层Al薄层；
(三)在步骤(二)所得产品上再直接沉积一层SiO2；
(四)将步骤(三)所得产品剥离光刻胶，使全部被刻蚀露出的表面与SiO2层之间都镀上一层Al薄层；
(五)重复步骤(一)-(四)标准光刻步骤进行N型区域开窗以及镀扩展电极工艺操作。
其中，步骤(一)中形成的脊条是产生激光的谐振腔，步骤(一)所用的刻蚀技术是ICP-RIE干法刻蚀技术。
步骤(二)中沉积Al薄层的镀膜技术包括ALD、电子束沉积、热蒸发沉积；所镀Al薄层生长于脊条结构侧壁和整个SiO2层下面部分。
步骤(二)中沉积Al薄层的温度为300℃，所沉积Al薄层的厚度为5-50nm。
本发明的上述技术方案的有益效果如下：
上述方案中，本发明在传统工艺的基础上，对工艺步骤做出了调整，在被刻蚀的表面与SiO2之间增加一层Al。这种做法有以下三点优点：
1、Al与O的结合能力更强，可以吸附干法刻蚀之后的GaN表面氧化层中的O。O作为杂质能级会束缚载流子，减少电子空穴的复合发光效率。而O被Al层吸附之后可以减少GaN中O杂质，增加激光器发光能力；
2、Al层可以与刻蚀后的GaN表面的悬挂键结合，修复GaN表面的刻蚀损伤，减少GaN表面态对于复合的负面影响；
3、Al层会很快被氧化成Al2O3，致密的Al2O3层可以阻挡镀SiO2时等离子体对GaN表面的轰击，保护脊条腔体，而Al层本身是通过 ALD沉积上去的，对于GaN的损伤极小。
附图说明
图1为本发明的脊条形半导体激光器有源区腔体侧壁钝化的优化方法流程示意图；
图2为本发明的脊条形半导体激光器有源区腔体侧壁钝化的优化方法工艺流程图。
其中：1-P型半导体；2-多量子阱结构；3-N型覆盖层；4-N型半导体；5-衬底；6-欧姆接触金属；7-光刻胶；8-铝薄层；9-SiO2层；10-扩展电极。
具体实施方式
为使本发明要解决的技术问题、技术方案和优点更加清楚，下面将结合附图及具体实施例进行详细描述。
传统的脊条形半导体激光器的结构使在脊条侧壁直接镀一层SiO2层，作为限制层使电流限制在从脊到有源层的电流通道内，降低阈值电流。由于在镀SiO2之前，暴露的GaN表面不可避免地会被氧化，而且干法刻蚀对于GaN表面造成的损伤也无法得到有效的修复，再加上镀SiO2的同时也会引入新的损伤，因此激光器的出光能力还有进一步提升的空间。
为了克服上述缺点，提升脊条形半导体激光器的性能，本发明提供一种脊条形半导体激光器有源区腔体侧壁钝化的优化方法。
如图1和图2所示，该方法具体步骤如下：
(一)对GaN样品进行刻蚀，形成P-GaN有源区脊条；具体为：
处理前样品层由外向内依次为：P型半导体1、多量子阱结构2、N型覆盖层3、N型半导体4、衬底5，在已经用磁控溅射镀好欧姆接触金属6的样品基础上，刻蚀出P-GaN有源区脊条，也就是产生激光的谐振腔；
在本步骤中，首先要对样品进行充分的清洗，然后以光刻胶作为 掩模进行刻蚀，具体包括：在100℃以上干燥10分钟，去除样品表面吸附的水汽；涂胶，前烘，曝光，显影，得到只存在于将要被刻蚀出的脊条上方的，厚度约为1.2μm的光刻胶7掩模。用等离子体去胶机去除光刻胶7底膜后，将样品放入感应耦合等离子体(inductively coupled plasma，ICP)刻蚀机中进行GaN刻蚀。该工艺气体包含Cl2和BCl3，ICP源和样片台偏置射频源的功率分别为500W和300W，刻蚀深度约500nm。
(二)在不进行去胶步骤的情况下，在步骤(一)所得产品上直接沉积一层Al薄层8；具体为：
将步骤(一)得到的衬底浸泡在去离子水中2分钟，然后用80℃标准清洗液SC1(NH40H:H2O2：H2O＝1：1：5)清洗10分钟，再用去离子水清洗和氮气吹干，紧接着将样品送入ALD反应室中。样品台的温度升高至300℃，使用三甲基铝TMA作为铝前驱体，使用氢气作为还原剂，生长参数设置为：1、高纯氩气携带TMA进入沉积室，持续时间2.5s；2、氩气清洗5s；3、通入氢气还原15s，4、氩气清洗5s。ALD循环为50～500个周期，厚度约5～50nm，实际沉积厚度视具体实验而定。
(三)在步骤(二)所得产品上再直接沉积一层SiO2；具体为：
将步骤(二)得到的样品浸泡在去离子水中清洗2分钟，氮气吹干，使用ICP-CVD沉积约100nm的SiO2层9。
(四)将步骤(三)所得产品剥离光刻胶，使全部被刻蚀露出的表面与SiO2层之间都镀上一层Al薄层；此步骤中，使用丙酮超声清洗5分钟，然后用NMP热板140℃加热20分钟，再用异丙醇超声清洗五分钟过，然后用去离子水清洗吹干。
(五)重复步骤(一)-(四)标准光刻步骤进行N型区域开窗以及镀扩展电极10工艺操作。此步骤中，N型开窗用IBE向下刻蚀到露出N型区域，扩展电极10使用磁控溅射方法镀Ti/Pt/Au:50/100/50nm。
步骤(二)中沉积Al薄层的镀膜技术包括ALD、电子束沉积、 热蒸发沉积；所镀Al薄层生长于脊条结构侧壁和整个SiO2层下面部分。
以上所述是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明所述原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (4)

  1. 一种脊条形半导体激光器有源区腔体侧壁钝化的优化方法，其特征在于：该方法步骤如下：
    (一)对GaN样品进行刻蚀，形成P-GaN有源区脊条；
    (二)在不进行去胶步骤的情况下，在步骤(一)所得产品上直接沉积一层Al薄层；
    (三)在步骤(二)所得产品上再直接沉积一层SiO2；
    (四)将步骤(三)所得产品剥离光刻胶，使全部被刻蚀露出的表面与SiO2层之间都镀上一层Al薄层；
    (五)重复步骤(一)-(四)标准光刻步骤进行N型区域开窗以及镀扩展电极工艺操作。
  2. 根据权利要求1所述的脊条形半导体激光器有源区腔体侧壁钝化的优化方法，其特征在于：所述步骤(一)中形成的脊条是产生激光的谐振腔，步骤(一)所用的刻蚀技术是ICP-RIE干法刻蚀技术。
  3. 根据权利要求1所述的脊条形半导体激光器有源区腔体侧壁钝化的优化方法，其特征在于：所述步骤(二)中沉积Al薄层的镀膜技术包括ALD、电子束沉积、热蒸发沉积；所镀Al薄层生长于脊条结构侧壁和整个SiO2层下面部分。
  4. 根据权利要求1所述的脊条形半导体激光器有源区腔体侧壁钝化的优化方法，其特征在于：所述步骤(二)中沉积Al薄层的温度为300℃，所沉积Al薄层的厚度为5-50nm。
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Publication number Priority date Publication date Assignee Title
CN107147447A (zh) * 2017-04-18 2017-09-08 中山大学 一种光拍频信号发射芯片及制备方法
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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002026453A (ja) * 2000-07-03 2002-01-25 Mitsubishi Electric Corp リッジ導波路型半導体レーザ及びその製造方法
JP2006324552A (ja) * 2005-05-20 2006-11-30 Sanyo Electric Co Ltd 赤色半導体レーザ素子及びその製造方法
US20070158637A1 (en) * 2006-01-06 2007-07-12 Kabushiki Kaisha Toshiba Semiconductor laser device
CN101262120A (zh) * 2007-03-08 2008-09-10 三菱电机株式会社 半导体激光装置
US20090323750A1 (en) * 2008-06-27 2009-12-31 Sanyo Electric Co., Ltd. Semiconductor laser device and method of manufacturing the same as well as optical pickup
CN104218447A (zh) * 2013-05-31 2014-12-17 山东华光光电子有限公司 一种半导体激光器芯片欧姆接触电极及其制备方法与应用
CN104319621A (zh) * 2014-10-29 2015-01-28 山东华光光电子有限公司 一种半导体激光器芯片欧姆接触金属电极及其制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1251608B1 (en) * 2000-08-22 2006-10-04 Mitsui Chemicals, Inc. Method for manufacturing semiconductor laser device
JP5001760B2 (ja) * 2007-09-10 2012-08-15 日本オプネクスト株式会社 半導体素子の製造方法
CN101820134A (zh) * 2010-04-21 2010-09-01 中国科学院半导体研究所 一种GaAs基半导体激光器的腔面钝化方法
JP6061858B2 (ja) * 2010-10-07 2017-01-18 ジョージア・テック・リサーチ・コーポレーション 電界効果トランジスタおよびその製造方法
CN104078837B (zh) * 2013-03-29 2017-12-15 山东华光光电子股份有限公司 一种GaN基蓝绿光激光二极管器件及制作方法
CN103311801A (zh) * 2013-06-27 2013-09-18 长春理工大学 一种基于ZnO薄膜钝化半导体激光器腔面的方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002026453A (ja) * 2000-07-03 2002-01-25 Mitsubishi Electric Corp リッジ導波路型半導体レーザ及びその製造方法
JP2006324552A (ja) * 2005-05-20 2006-11-30 Sanyo Electric Co Ltd 赤色半導体レーザ素子及びその製造方法
US20070158637A1 (en) * 2006-01-06 2007-07-12 Kabushiki Kaisha Toshiba Semiconductor laser device
CN101262120A (zh) * 2007-03-08 2008-09-10 三菱电机株式会社 半导体激光装置
US20090323750A1 (en) * 2008-06-27 2009-12-31 Sanyo Electric Co., Ltd. Semiconductor laser device and method of manufacturing the same as well as optical pickup
CN104218447A (zh) * 2013-05-31 2014-12-17 山东华光光电子有限公司 一种半导体激光器芯片欧姆接触电极及其制备方法与应用
CN104319621A (zh) * 2014-10-29 2015-01-28 山东华光光电子有限公司 一种半导体激光器芯片欧姆接触金属电极及其制备方法

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