WO2018074866A2 - Dispositif électroluminescent à semi-conducteur - Google Patents

Dispositif électroluminescent à semi-conducteur Download PDF

Info

Publication number
WO2018074866A2
WO2018074866A2 PCT/KR2017/011607 KR2017011607W WO2018074866A2 WO 2018074866 A2 WO2018074866 A2 WO 2018074866A2 KR 2017011607 W KR2017011607 W KR 2017011607W WO 2018074866 A2 WO2018074866 A2 WO 2018074866A2
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
semiconductor light
emitting device
substrate
reflective layer
Prior art date
Application number
PCT/KR2017/011607
Other languages
English (en)
Korean (ko)
Other versions
WO2018074866A3 (fr
Inventor
김경민
한정우
김봉환
정겨울
조영관
Original Assignee
주식회사 세미콘라이트
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020160137618A external-priority patent/KR20180044039A/ko
Priority claimed from KR1020160137624A external-priority patent/KR20180044470A/ko
Priority claimed from KR1020160137620A external-priority patent/KR102017734B1/ko
Priority claimed from KR1020160146893A external-priority patent/KR101877236B1/ko
Priority claimed from KR1020160148754A external-priority patent/KR101863545B1/ko
Application filed by 주식회사 세미콘라이트 filed Critical 주식회사 세미콘라이트
Publication of WO2018074866A2 publication Critical patent/WO2018074866A2/fr
Publication of WO2018074866A3 publication Critical patent/WO2018074866A3/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements

Definitions

  • the present disclosure relates generally to semiconductor light emitting devices, and more particularly, to semiconductor light emitting devices having improved light extraction efficiency.
  • FIG. 1 is a view illustrating an example of a conventional semiconductor light emitting device chip, wherein the semiconductor light emitting device chip has a growth layer 100 (eg, a sapphire substrate) and a buffer layer 200 and a first conductivity on the growth substrate 100.
  • the first semiconductor layer 300 eg n-type GaN layer
  • the active layer 400 that generates light through recombination of electrons and holes (eg, INGaN / (In) GaN MQWs), a second conductivity different from the first conductivity
  • the second semiconductor layer 500 for example, a p-type GaN layer having a plurality of layers is sequentially deposited, and a transmissive conductive film 600 for current diffusion and an electrode 700 serving as a bonding pad are formed thereon.
  • An electrode 800 eg, a Cr / Ni / Au laminated metal pad
  • the buffer layer 200 may be omitted.
  • the semiconductor light emitting device chip of the same type as that of FIG. 1 is called a lateral chip.
  • the growth substrate 100 side is electrically connected to the outside becomes a mounting surface.
  • FIG. 2 is a view showing another example of the semiconductor light emitting device chip disclosed in US Patent No. 7,262,436.
  • the semiconductor light emitting device chip includes a growth substrate 100 and a growth substrate 100, and a first semiconductor having a first conductivity.
  • the layer 300, an active layer 400 that generates light through recombination of electrons and holes, and a second semiconductor layer 500 having a second conductivity different from the first conductivity are sequentially deposited thereon, and a growth substrate (
  • the first electrode layer 901, the second electrode layer 902, and the third electrode layer 903, which are formed of three layers for reflecting light toward the side 100, are formed and are exposed by etching.
  • the electrode 800 which functions as a bonding pad is formed on ().
  • the first electrode film 901 may be an Ag reflecting film
  • the second electrode film 902 may be a Ni diffusion barrier film
  • the third electrode film 903 may be an Au bonding layer.
  • a semiconductor light emitting device chip of the same type as that of FIG. 2 is particularly referred to as a flip chip.
  • the electrode 800 formed on the first semiconductor layer 300 is at a height lower than that of the electrode films 901, 902, and 903 formed on the second semiconductor layer 500. It can also be formed.
  • the height reference may be a height from the growth substrate 100.
  • FIG 3 is a view showing an example of a conventional semiconductor light emitting device.
  • the semiconductor light emitting device 100 includes a vertical semiconductor light emitting chip 150 in the lead frames 110 and 120, the mold 130, and the cavity 140, and the cavity 140. Is filled with the encapsulant 170 containing the wavelength converting member 160.
  • the lower surface of the vertical semiconductor light emitting device chip 150 is electrically connected directly to the lead frame 110, and the upper surface is electrically connected to the lead frame 120 by the wire 180.
  • a portion of the light emitted from the vertical semiconductor light emitting device chip 150 may excite the wavelength conversion material 160 to produce light of different colors, and two different lights may be mixed to form white light.
  • the semiconductor light emitting device chip 150 may generate blue light, and light generated by being excited by the wavelength converting material 160 may be yellow light, and blue light and yellow light may be mixed to produce white light.
  • 3 illustrates a semiconductor light emitting device using the vertical semiconductor light emitting device chip 150, but a semiconductor light emitting device having a shape similar to that of FIG. 3 may be manufactured using the semiconductor light emitting device chips illustrated in FIGS. 1 and 2. have.
  • a first conductive portion, a second conductive portion, and an insulating portion positioned between the first conductive portion and the second conductive portion A substrate comprising; A body disposed on the substrate and including a bottom portion, the body having a hole formed in the bottom portion; A semiconductor light emitting device chip disposed on a substrate exposed by a hole and electrically connected to a substrate, comprising: a semiconductor having a plurality of semiconductor layers generating ultraviolet rays by recombination of electrons and holes, and electrodes electrically connected to the plurality of semiconductor layers Light emitting device chip;
  • a semiconductor light emitting device including a reflective layer formed on at least a portion of an inner surface of a body is provided.
  • a first conductive portion, a second conductive portion, and an insulating portion positioned between the first conductive portion and the second conductive portion A substrate comprising; A semiconductor light emitting device chip disposed on a substrate and electrically connected to a substrate, comprising: a semiconductor light emitting device chip having a plurality of semiconductor layers generating ultraviolet rays by recombination of electrons and holes, and electrodes electrically connected to the plurality of semiconductor layers; A wall disposed on the substrate and surrounding the semiconductor light emitting device chip; A wall, comprising: a wall comprising a bottom surface and a first face, the first face and a second face; An insulating adhesive layer interposed between the lower surface of the wall and the substrate; A bonding pad interposed between the substrate and the semiconductor light emitting device chip and electrically connecting the electrode and the substrate; And a reflective layer formed on at least a portion of the inner side surface of the wall, wherein the bonding pad is made of
  • a first conductive portion, a second conductive portion, and an insulating portion positioned between the first conductive portion and the second conductive portion A substrate comprising; A semiconductor light emitting device chip disposed on the substrate and electrically connected to the substrate; And a wall disposed on a side surface of the substrate and surrounding the semiconductor light emitting device chip and the substrate, the wall including a first surface connected to a lower surface of the wall and a second surface connected to the first surface.
  • the lower surface of the substrate and the substrate is provided with a semiconductor light emitting device, characterized in that located on the same line.
  • a semiconductor light emitting device comprising: a body including a bottom portion, the body having a hole formed in the bottom portion; A semiconductor light emitting device chip disposed on a substrate exposed by a hole and electrically connected to a substrate, comprising: a semiconductor having a plurality of semiconductor layers generating ultraviolet rays by recombination of electrons and holes, and electrodes electrically connected to the plurality of semiconductor layers Light emitting device chip; And a reflective layer formed on at least a portion of the inner side of the body, the reflective layer comprising: a coating layer having a first thickness by coating an insulating material on the inner side of the body; And a metal layer in contact with the coating layer and deposited with a metallic reflective material, the second layer having a second thickness.
  • a semiconductor light emitting device comprising: a body including a bottom portion having a plurality of holes formed in a longitudinal direction; A semiconductor light emitting device chip accommodated in each of the bottom hole formed on both sides of the body; A plurality of semiconductor layers including an active layer for generating light by recombination of electrons and holes and electrodes electrically connected to the plurality of semiconductor layers A semiconductor light emitting device chip; A reinforcing member formed in a hole in the bottom portion positioned between the semiconductor light emitting device chips; And an encapsulant filled in the body to fix the semiconductor light emitting device chip and the reinforcing material.
  • a body having a bottom portion in which a plurality of holes having different widths are formed in a longitudinal direction is disposed on a base.
  • a method of manufacturing a semiconductor light emitting device is provided.
  • FIG. 1 is a view showing an example of a conventional semiconductor light emitting device chip
  • FIG. 2 is a view showing another example of a semiconductor light emitting device chip disclosed in US Patent No. 7,262,436;
  • FIG. 3 is a view showing an example of a conventional semiconductor light emitting device
  • FIG. 5 is a view showing another example of a semiconductor light emitting device according to the present disclosure.
  • FIG. 6 is a view showing another example of a semiconductor light emitting device according to the present disclosure.
  • FIG. 7 is a view showing another example of a semiconductor light emitting device according to the present disclosure.
  • FIG. 8 is a view illustrating various embodiments of a semiconductor light emitting device disclosed in FIG. 7;
  • FIG. 9 is a view showing an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure.
  • FIG. 10 is a view showing another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure.
  • FIG. 11 illustrates an example of a semiconductor light emitting device according to the present disclosure
  • FIG. 12 illustrates another example of a semiconductor light emitting device according to the present disclosure
  • FIG. 13 is a view showing another example of a semiconductor light emitting device according to the present disclosure.
  • FIG. 14 is a view showing another example of a semiconductor light emitting device according to the present disclosure.
  • 15 to 19 illustrate an example of a method of manufacturing the semiconductor light emitting device shown in FIG. 10;
  • FIG. 20 is a view showing another example of the method of manufacturing the semiconductor light emitting device shown in FIG.
  • FIG. 21 illustrates an example of a semiconductor light emitting device according to the present disclosure
  • FIG. 22 illustrates another example of a semiconductor light emitting device according to the present disclosure
  • FIG. 23 is a view showing another example of a semiconductor light emitting device according to the present disclosure.
  • FIG. 24 is a view showing another example of a semiconductor light emitting device according to the present disclosure.
  • 25 is a view showing another example of a semiconductor light emitting device according to the present disclosure.
  • 26 is a view showing an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure
  • FIG. 27 illustrates an example of a semiconductor light emitting device according to the present disclosure
  • 29 is a view showing another example of a semiconductor light emitting device according to the present disclosure.
  • FIG. 30 is a view showing another example of a semiconductor light emitting device according to the present disclosure.
  • FIG. 31 is a view showing another example of a semiconductor light emitting device according to the present disclosure.
  • FIG. 32 is a view showing another example of a semiconductor light emitting device according to the present disclosure.
  • FIG. 33 is a view showing an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure.
  • 34 is a view showing an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure.
  • 35 is a view showing another example of a semiconductor light emitting device according to the present disclosure.
  • 36 is a view showing another example of a semiconductor light emitting device according to the present disclosure.
  • FIG. 37 is a view showing another example of a semiconductor light emitting device according to the present disclosure.
  • 39 is a view showing another example of a semiconductor light emitting device according to the present disclosure.
  • FIG. 40 is a view showing another example of a semiconductor light emitting device according to the present disclosure.
  • 41 is a view showing an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure.
  • FIG 43 is a view showing another example of a semiconductor light emitting device according to the present disclosure.
  • FIG. 4 is a diagram illustrating an example of a semiconductor light emitting device according to the present disclosure.
  • FIG. 4 (a) is a perspective view
  • FIG. 4 (b) is a cross-sectional view taken along AA ′
  • FIG. 4 (c) is a view showing a semiconductor light emitting device further including an insulating adhesive layer.
  • a semiconductor light emitting device including a reflective layer spaced apart from a substrate is shown.
  • the semiconductor light emitting device 200 includes a substrate 210, a semiconductor light emitting device chip 220, a body 230, a reflective layer 240, and an encapsulant 250.
  • the substrate 210 includes a first conductive portion 211, a second conductive portion 212, and an insulating portion 213 positioned between the first conductive portion 211 and the second conductive portion 212.
  • the method of manufacturing the substrate 210 is described in Korean Patent Laid-Open No. 2012-0140454.
  • the first conductive portion 211 and the second conductive portion 212 may be formed of a metallic material such as aluminum (Al), copper (Cu), or the like.
  • the first conductive portion 211 and the second conductive portion 212 have a lead frame function in the semiconductor light emitting device of FIG. 3 and are electrically connected to the outside.
  • the first conductive portion 211 and the second conductive portion 212 are excellent in electrical contact, for example, gold (Au), silver (Ag), nickel (Ni), aluminum (Al), rhodium (Rh). ), Lead (Pd), iridium (Ir), ruthenium (Ru), may be formed of a metal or alloy containing at least one of magnesium (Mg), zinc (Zn).
  • the first conductive portion 211 and the second conductive portion 212 are formed of a metallic material having excellent electrical contact, for example, gold (Au), the substrate 210 and the semiconductor light emitting device chip 220 ) And the electrical connection and physical connection with the body 230 can be facilitated to improve the reliability of the semiconductor light emitting device 200. Accordingly, light extraction efficiency of the semiconductor light emitting device 200 may be improved.
  • a metallic material having excellent electrical contact for example, gold (Au)
  • Au gold
  • the insulation unit 213 may be formed of an electrically insulating material, but is not limited thereto.
  • the semiconductor light emitting device chip 220 may include a first electrode 221 and a second electrode 222, and may be a lateral chip, a flip chip, or a vertical chip. However, when using a flip chip, the first electrode 221 and the second electrode 222 may be electrically connected to each other by being positioned on the first conductive portion 211 and the second conductive portion 212 without using wire bonding. desirable.
  • the height H1 of the substrate 210 may be formed to be the same as the height H2 of the body 230. However, the present invention is not limited thereto, and the height H1 of the substrate 210 may be smaller or larger than the height H2 of the body 230.
  • the body 230 is formed on the substrate 210 and surrounds the semiconductor light emitting device chip 220, and includes a sidewall 231 and a bottom portion 232.
  • the body 230 may be obtained through injection molding, for example, using an insulating material of resin-based or ceramic-based.
  • the height H2 of the body 230 may be smaller than the length L of the body 230.
  • the height H2 of the body 230 may be 0.1 mm or more and 0.6 mm or less, and the length L of the body 230 may be 0.5 mm or more.
  • the bottom portion 232 includes a hole 233. It also includes a cavity 234 formed by sidewalls 231 and bottom 232.
  • the bottom part 232 includes an upper surface 2320 and a lower surface 2321.
  • Sidewall 231 includes an outer surface 2310 and an inner surface 2311. On the other hand, the side wall 231 may not exist as needed.
  • the size of the hole 233 is similar to that of the semiconductor light emitting device chip 220 or 1.2 times the size of the semiconductor light emitting device chip 220.
  • the inner surface 2322 of the bottom portion 232 forming the hole 233 is preferably inclined to improve the light extraction efficiency.
  • the semiconductor light emitting device chip 220 is located in the hole 233.
  • the semiconductor light emitting device chip 220 may be a lateral chip, a vertical chip, and a flip chip.
  • the first electrode 221 and the second electrode 222 are not covered by the encapsulant 250 and are exposed from the lower surface of the encapsulant 250.
  • the height 2323 of the bottom portion 232 is preferably lower than the height 223 of the semiconductor light emitting device chip 220. This is because the light extraction efficiency of the semiconductor light emitting device 200 may be deteriorated when the height 2323 of the bottom portion 232 is higher than the height 223 of the semiconductor light emitting device chip 220. However, although the light extraction efficiency may be reduced, the height 2323 of the bottom portion 232 may be higher than the height 223 of the semiconductor light emitting device chip 220 in consideration of an optical path. A case in which the height 2323 of the bottom portion 232 is higher than the height 223 of the semiconductor light emitting device chip 220 will be described with reference to FIG. 7.
  • the height 2323 of the bottom part 232 and the height 223 of the semiconductor light emitting device chip 220 may be measured based on the bottom surface 2321 of the bottom part 232.
  • the height 223 of the semiconductor light emitting device chip 220 may be 0.05 mm or more and 0.5 mm or less.
  • the height 2323 of the bottom portion 232 may be 0.08 mm or more and 0.4 mm or less.
  • the reflective layer 240 is formed on an inner surface 2311 of the sidewall 231, an upper surface 2320 of the bottom portion 232, and one surface of an inner surface 2322 of the bottom portion 232.
  • the inner surface 2311 of the side wall 231, the upper surface 2320 of the bottom portion 232, and the inner surface 2322 of the bottom portion 232 are connected in one line. That is, the reflective layer 240 is formed on one surface of the body 230 that connects to the encapsulant 250 covering the semiconductor light emitting device chip 220.
  • the reflective layer 240 is preferably made of a highly efficient metallic material that reflects light, and for example, the metallic material may be formed by a method such as coating, plating, and deposition.
  • Examples of the metallic material forming the reflective layer 240 include silver (Ag) and aluminum (Al), but aluminum (Al) is preferable in consideration of cost and efficiency.
  • the reflective layer 240 is preferably formed of aluminum (Al) having high efficiency of reflecting from ultraviolet light. Since the reflective layer 240 is formed of aluminum (Al), light extraction efficiency of the semiconductor light emitting device may be improved by reflecting a portion of light, for example, ultraviolet light, emitted from the semiconductor light emitting device chip 220. .
  • a reflective layer may be formed on the upper surface of the body 230.
  • a reflective layer may be formed by coating a metallic material or a DBR distributed Bragg reflector (DBR) on the upper surface of the body 230.
  • DBR distributed Bragg reflector
  • an insulating layer 2320 may be separately formed on the inner surface 2232 of the bottom part 232 to reduce the risk of short circuit.
  • an insulating adhesive layer 235 may be interposed between the lower surface 2321 of the bottom part 232 and the substrate 210.
  • the insulating adhesive layer 235 is formed by bonding the substrate 210 and the body 230 using an insulating adhesive, wherein a portion of the insulating adhesive is formed on the first inner surface 241 to be shortened by the metallic reflective layer 240. The risk may be lower.
  • the reflective layer 240 has an inner side surface 2232 of the bottom portion 232 except for a portion 2321 in contact with the substrate 210 of the inner side surface 2232 of the bottom portion 232. And the inner side surface 2311 of the side wall 231. Accordingly, since the reflective layer 240 is spaced apart from the substrate 210 at predetermined intervals, short risks may be prevented between the reflective layer 240 made of a metallic material and the substrate 210.
  • the reflective layer 240 is formed only on the inner surface 2311 of the sidewall 231 except for the inner surface 2232 of the bottom portion 232, thereby forming the reflective layer 240 and the substrate 210 made of a metallic material. Shorter risks can be made in between.
  • the encapsulant 250 is provided at least in the cavity 214 to cover the semiconductor light emitting device chip 220, so that the semiconductor light emitting device chip 220 positioned in the hole 233 may be fixed to the body 230.
  • the encapsulant 250 has a light transmitting property, and may be formed of one of an epoxy resin and a silicone resin.
  • the encapsulant 250 may be made of PDMS (polydimethylsiloxane) resin. . Meanwhile, the encapsulant 250 may be omitted. When the encapsulant 250 is omitted, the encapsulant 250 may be covered with glass or quartz.
  • FIG. 5 is a view showing another example of a semiconductor light emitting device according to the present disclosure.
  • FIG. 5 is a view showing another example of a semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device 300 includes a reflective material 360 between the bottom portion 331 of the body 330 and the semiconductor light emitting device chip 320.
  • the semiconductor light emitting device has the same characteristics as the semiconductor light emitting device 200 of FIG. 4.
  • the reflective material 360 is positioned on the side surface of the semiconductor light emitting device chip 320, the light emitted from the side surface of the semiconductor light emitting device chip 320 may be reflected, thereby improving light extraction efficiency of the semiconductor light emitting device 300.
  • the reflective material 360 is preferably a white reflective material.
  • it may be a white silicone resin.
  • the reflective material 360 may be positioned to form a space 331 between the reflective material 360 and the semiconductor light emitting device chip 320.
  • FIG. 6 is a view illustrating another example of a semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device 400 includes a plurality of holes 401 at the bottom 411 of the body 430, and the semiconductor light emitting device chip 420 is positioned in each hole 401.
  • the semiconductor light emitting device 200 of FIG. 4 is identical to the semiconductor light emitting device 200 of FIG. 4 except that the semiconductor light emitting device chip 420 is positioned in the plurality of holes 401 and each hole 401, and the reflective layer 240 shown in FIG. Has characteristics.
  • the semiconductor light emitting device chips 420 disposed in the holes 401 may emit different colors.
  • FIG 7 illustrates another example of the semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device 500 is characterized in that the height 5323 of the bottom 532 of the body 530 is higher than the height 523 of the semiconductor light emitting device chip 520.
  • FIG. 7A illustrates the semiconductor light emitting device 200 when the height 2323 of the bottom portion 232 is lower than the height 223 of the semiconductor light emitting device 220 as the semiconductor light emitting device 200 of FIG. 4. Show the path of light 224, 225 coming from the side of 220.
  • FIG. 7B illustrates light 524 and 525 of light emitted from the side of the semiconductor LED chip 520 when the height 5323 of the bottom portion 532 is higher than the height 523 of the semiconductor LED chip 520. Show the path.
  • light 224 emitted from a portion lower than the height 2323 of the bottom portion 232 of the light 224 and 225 emitted from the side surface of the semiconductor LED chip 220 may be a hole 233.
  • the light 225 coming from a portion higher than the height 2323 of the bottom portion 232 is the bottom portion forming a hole (233) ( It is not reflected by the inner side surface 2232 of the 232 and goes upward.
  • the height of the bottom portion is preferably lower than the height of the semiconductor light emitting device chip as shown in FIG. 7 (a). Is higher than the height of the semiconductor light emitting device chip 520.
  • the bottom portion 532 which forms the hole 533 so that the width 5331 of the lower opening of the hole is larger than the width 5330 of the upper opening of the hole 533 is formed.
  • the inner side surface 5322 is inclined, most of the light 525 emitted from the side surface of the semiconductor light emitting device chip 520 does not go upward. Therefore, when the height 5323 of the bottom portion 532 is higher than the height 523 of the semiconductor light emitting device chip 520, the inner surface 5322 of the bottom portion 532 forming the hole 533 may be a hole 533. It is preferable to incline so that the width 5330 of the upper opening of the hole may be larger than the width 5331 of the lower opening of the hole 533.
  • the semiconductor light emitting device 500 is substantially the same as the semiconductor light emitting device 200 of FIG. 4.
  • FIG. 8 is a view illustrating various embodiments of the semiconductor light emitting device disclosed in FIG. 7.
  • the height 5323 of the bottom portion 532 is two times or less higher than the height 523 of the semiconductor light emitting device chip 520. It is preferable in terms of light extraction efficiency. When higher than twice, for example, the light 525 from the side surface of the semiconductor light emitting device chip 520 is reflected on the inner surface 5322 of the bottom portion 532 as shown in FIG. Because some may be lost.
  • the inclination angle 7324 formed by the inner surface 5322 of the bottom portion 532 and the lower surface 7321 of the bottom portion 5322 is preferably 45 ° or more. If the angle is less than 45 °, the effect of adjusting the path of the light 525 emitted from the side surface of the semiconductor light emitting device chip 520 by the inner side surface 5322 of the bottom portion 532 is inferior. In addition, it is preferable that the inclination angle 5324 formed by the inner surface 5322 of the bottom portion 532 and the lower surface 5321 of the bottom portion 532 be 90 ° or less. The problem which arises when the inclination angle 5324 exceeds 90 degrees was demonstrated in FIG.7 (c).
  • FIG. 9 is a view illustrating an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure.
  • a body 630 including a hole 633 is prepared.
  • the body 630 may be obtained through injection molding.
  • a reflective layer 640 is formed on the inner surface of the body 630.
  • the reflective layer 640 may be formed using a deposition method or a spray coating.
  • the body 630 having the reflective layer 640 is disposed on the substrate 610.
  • An insulating adhesive layer 635 may be interposed between the bottom surface of the bottom portion 632 and the substrate 610.
  • the semiconductor light emitting device chip 620 is positioned in the hole 633. Accordingly, the height 6223 of the bottom portion 632 may be higher than the height of the semiconductor light emitting device chip 620 accommodated in the hole 633.
  • the first electrode 621 and the second electrode 622 of the semiconductor light emitting device chip 620 are positioned on the first conductive portion 611 and the second conductive portion 612 of the substrate 610, respectively, so as to be electrically and physically separated from each other. Is connected.
  • the semiconductor light emitting device chip 620 is covered with an encapsulant 650 to fix the semiconductor light emitting device chip 620 to the body 630.
  • the order of the manufacturing method of the semiconductor light emitting device according to the present disclosure may be included in the scope of the present disclosure as long as the skilled person can easily change.
  • the substrate (for the alignment between the first electrode 621 and the second electrode 622 of the semiconductor light emitting device chip 620 and the first conductive portion 611 and the second conductive portion 612 of the substrate 610).
  • the semiconductor light emitting device chip 620 may be disposed first on the 610.
  • the body 630 including the hole 633 is disposed on the substrate 610.
  • the order of the manufacturing method of the semiconductor light emitting device according to the present disclosure may be included in the scope of the present disclosure as long as the skilled person can easily change.
  • FIG. 10 is a view showing a method of manufacturing the semiconductor light emitting device shown in FIG.
  • the adhesive layer 2 is coated on the base 1.
  • the adhesive layer 2 has a thickness of 3 ⁇ m or more and 20 ⁇ m or less, and is made of silicone or acrylic material.
  • the thickness of the adhesive layer 2 preferably has a thickness of 8 ⁇ m to 10 ⁇ m.
  • the body 730 including the holes 733 is fixed on the base 1 by using the adhesive layer 2 applied on the base 1.
  • protruding portions 3a and 3b are formed at portions where the adhesive layer 2 and the body 730 come into contact with each other by the frictional force between the adhesive layer 2 and the body 730 to cure.
  • the thickness of the adhesive layer 2 is between 8 ⁇ m and 10 ⁇ m, the protruding portions 3a and 3b of the adhesive layer 2 that protrude and harden at the portion where the adhesive layer 2 and the body 730 contact each other are about. It has a thickness of 3 micrometers-8 micrometers.
  • the reflective layer 740 is formed on the inner surface of the body 730.
  • the reflective layer 740 may be formed using a deposition method or a spray coating.
  • the body 730 on which the reflective layer 740 is formed is separated from the base 1.
  • the adhesive layer 2 is removed through a separate etching process.
  • the reflective layer 740 protrudes from the contact portion of the adhesive layer 2 and the body 730, and a part of the inner side surface 7322 of the bottom portion 732 by the protruding portion 3a of the hardened adhesive layer 2. Except for the inner surface 7322 of the bottom portion 732 and the inner surface 7311 of the side wall 731 is formed.
  • an inner side surface of the bottom portion 732 except for a portion 7321 of the bottom portion 732 inner side surface 7322 contacting the substrate 710 on the substrate 710.
  • a body 730 is disposed that includes a reflective layer 740 formed only on the inner surface 7311 of the sidewall 731 and the 7322.
  • An insulating adhesive layer 735 may be interposed between the bottom surface of the bottom portion 732 and the substrate 710.
  • the order of the manufacturing method of the semiconductor light emitting device according to the present disclosure may be included in the scope of the present disclosure as long as the skilled person can easily change.
  • FIG. 11 is a view showing an example of a semiconductor light emitting device for generating ultraviolet light according to the present disclosure.
  • the semiconductor light emitting device shown in FIG. 11 may have the shape of a semiconductor light emitting device of the type shown in FIGS. 4 to 10.
  • the walls can have various shapes.
  • FIG. 11A is a perspective view
  • FIG. 11B is a cross-sectional view taken along AA ′
  • FIG. 11C is a view showing a reflection path of ultraviolet rays
  • FIG. 11D further includes an insulating adhesive layer. It is a figure which shows the semiconductor light emitting element.
  • the semiconductor light emitting device 200 includes a substrate 210, a semiconductor light emitting device chip 220, a bonding pad 230, a wall 240, a reflective layer 250, and an encapsulant 260.
  • the substrate 210 includes a first conductive portion 211, a second conductive portion 212, and an insulating portion 213 positioned between the first conductive portion 211 and the second conductive portion 212.
  • the method of manufacturing the substrate 210 is described in Korean Patent Laid-Open No. 2012-0140454.
  • the first conductive portion 211 and the second conductive portion 212 may be formed of a metallic material such as aluminum (Al), copper (Cu), or the like.
  • the first conductive portion 211 and the second conductive portion 212 have a lead frame function in the semiconductor light emitting device of FIG. 3 and are electrically connected to the outside.
  • the first conductive portion 211 and the second conductive portion 212 have a high reflectivity and high reflectivity and excellent electrical bonding properties, for example, silver (Ag), nickel (Ni), and aluminum. It may be formed of a metal or an alloy including at least one of (Al), rhodium (Rh), lead (Pd), iridium (Ir), ruthenium (Ru), magnesium (Mg), and zinc (Zn).
  • the first conductive portion 211 and the second conductive portion 212 are formed of aluminum (Al) having high efficiency of reflecting ultraviolet rays
  • the light emitted from the semiconductor light emitting device chip 220 may be, for example, ultraviolet rays.
  • the light extraction efficiency of the semiconductor light emitting device can be improved.
  • the insulation unit 213 may be formed of an electrically insulating material, but is not limited thereto.
  • the semiconductor light emitting device chip 220 may include a first electrode 221 and a second electrode 222, and may be a lateral chip, a flip chip, or a vertical chip. However, when using a flip chip, the first electrode 221 and the second electrode 222 may be electrically connected to each other by being positioned on the first conductive portion 211 and the second conductive portion 212 without using wire bonding. desirable.
  • the bonding pad 230 includes a first bonding pad 231, a second bonding pad 232, and a third bonding pad 233.
  • the bonding pad 230 made of a metallic material having excellent bonding properties is made of a material different from the first electrode 221 and the second electrode 222 made of a metallic material having excellent reflectivity.
  • the bonding pad 230 may be formed by a deposition or plating method, but is not limited thereto.
  • the first bonding pad 231 is positioned between the first conductive portion 211 and the first electrode 221 and electrically and physically connects the substrate 210 and the semiconductor light emitting device chip 220.
  • the thickness of the first bonding pad 231 is preferably about 3 ⁇ m or more in order to electrically and physically connect the first conductive portion 211 and the first electrode 221, the semiconductor light emitting device 200 may have a thickness in terms of physical aspects. Less than about 10 micrometers is preferred to facilitate electrical connection from an electrical standpoint without affecting size.
  • the width of the first bonding pad 231 may be smaller than the width of the first conductive portion 211, but may also be the same width as the first conductive portion 211.
  • the first bonding pad 231 is formed smaller than the width of the substrate 210.
  • the first bonding pad 231 may be formed of a metal material having excellent bonding properties and high conductivity, for example, gold (Au), platinum (Pt), AuSn, or the like, but is not limited thereto.
  • the first bonding pad 231 is formed of gold (Au), thereby facilitating electrical and physical connection between the first conductive portion 211 and the first electrode 221 to improve reliability of the semiconductor light emitting device. Can be improved.
  • the second bonding pad 232 is positioned between the second conductive portion 212 and the second electrode 222 to electrically and physically connect the substrate 210 and the semiconductor light emitting device chip 220.
  • the thickness of the second bonding pad 232 is preferably about 3 ⁇ m or more in order to electrically and physically connect the second conductive portion 212 and the second electrode 222. Less than about 10 micrometers is preferred to facilitate electrical connection from an electrical standpoint without affecting size.
  • the thickness of the second bonding pad 232 is preferably formed to be the same as the thickness of the first bonding pad 231.
  • the width of the second bonding pad 232 may be smaller than the width of the second conductive portion 212, but may be formed to have the same width as that of the second conductive portion 212.
  • the second bonding pads 232 are formed to be smaller than the width of the substrate 210.
  • the second bonding pads 232 may be formed to be the same as, or larger than, or smaller than the width of the first bonding pads 231.
  • the second bonding pad 232 may be formed of a metal material having excellent bonding and high conductivity, for example, platinum (Pt), gold (Au), AuSn, or the like, but is not limited thereto.
  • the second bonding pad 232 is formed of gold (Au) to facilitate electrical and physical connection between the second conductive portion 212 and the second electrode 222 to improve the reliability of the semiconductor light emitting device. You can.
  • the second bonding pads 232 may be formed of the same material as the first bonding pads 231 at the same time to simplify the process of the bonding pads 230.
  • the third bonding pads 233 are positioned on the bottom surface opposite to the top surface of the substrate 210 in contact with the semiconductor light emitting device chip 220, and are electrically and physically connected to the outside.
  • the third bonding pads 233 are formed on the entire lower surface of the substrate 210 except for the insulating portion 213.
  • the third bonding pads 233 may be omitted.
  • the wall 240 is formed on the substrate 210 and surrounds the semiconductor light emitting device chip 220, and includes a first inner side surface 241, a second inner side surface 242, and a lower surface 243.
  • the wall 240 can be obtained through injection molding using an insulating material such as, for example, an epoxy resin or a silicone resin.
  • the wall 240 is not limited thereto, and may be formed of metal.
  • the first inner surface 241 is connected to the lower surface 243, and the second inner surface 242 is connected to the first inner surface 241.
  • the reflective layer 250 is formed on one surface of the second inner side surface 242 of the wall 240. That is, the reflective layer 250 is formed on one surface of the second inner side surface 242 in contact with the encapsulant 260 covering the semiconductor light emitting device chip 220.
  • the reflective layer 250 is preferably made of a metallic material having high efficiency of reflecting light, and for example, the metallic material may be formed by a method such as coating, plating, and deposition.
  • the metallic material forming the reflective layer 250 examples include silver (Ag), aluminum (Al), and the like, but when the semiconductor light emitting device chip 220 is used as an ultraviolet chip, the reflective layer 240 reflects light in ultraviolet rays. It is preferable to form from this high aluminum (Al).
  • the reflective layer 250 may be formed of the same material as the first conductive portion 211 and the second conductive portion 212, but is not limited thereto and may be formed of a metallic material having high reflectance.
  • the reflective layer 250 made of the metallic material is formed on the first inner side surface 241
  • the reflective layer 250 is not formed on the first inner side surface 241, and the second inner side surface ( 242 only.
  • the first inner side surface 241 is formed so that the reflective layer 250 is not formed on the first inner side surface 241. It is preferable that the inclination angle 245 of the lower surface 243 of the wall 240 is an obtuse angle.
  • the inclination angle 246 of the second inner surface 242 and the imaginary surface 247 parallel to the lower surface 243 of the wall 240 is an acute angle to extract the light extraction efficiency reflected by the reflective layer 250. It is preferable because it can raise.
  • the first conductive portion 211 and the second conductive portion 212 are formed of aluminum (Al) having high efficiency reflecting from ultraviolet rays, the first conductive portion 211 and the second conductive portion 212 are reflected from the light emitted from the semiconductor light emitting device chip 220 or the reflective layer 250. By reflecting a part of the light, the light extraction efficiency of the semiconductor light emitting device can be improved.
  • an insulating adhesive layer 270 may be interposed between the lower surface 243 of the wall 240 and the substrate 210.
  • the insulating adhesive layer 270 is formed by bonding the substrate 210 and the wall 240 using an insulating adhesive, wherein a part of the insulating adhesive is formed on the first inner surface 241 to be shorted by the metallic reflective layer 250. The risk may be lower.
  • the height 248 of the point where the first inner side surface 241 and the second inner side surface 242 meet is preferably 5 ⁇ m or more for preventing short, but for the light extraction efficiency, the first inner surface in which the reflective layer 250 is not formed is formed. Less than 50 ⁇ m is preferred in that the side 241 should be small.
  • a reflective layer 250 may be formed on the top surface 249 of the wall 240.
  • the present disclosure is that the metallic reflective layer 250 is not formed on the first inner side surface 241, and that the reflective layer is not excluded from the first inner side surface 241 as necessary.
  • the encapsulant 260 is formed to cover the semiconductor light emitting device chip 220.
  • the encapsulant 260 may be formed of one of epoxy resin and silicone resin, and may be made of PDMS (polydimethylsiloxane) resin when the semiconductor light emitting device chip 220 is used as an ultraviolet chip. Meanwhile, the encapsulant 260 may be omitted. When the encapsulant 260 is omitted, the encapsulant 260 may be covered with glass or quartz.
  • PDMS polydimethylsiloxane
  • FIG 12 illustrates another example of the semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device 300 includes a wall 340 having an inner side surface 341 having a circular shape.
  • the inner surface 341 of the wall 340 may have various shapes such as a rectangle and a circle.
  • the semiconductor light emitting device 300 is substantially the same as the semiconductor light emitting device 200 of FIG. 11.
  • FIG. 13 illustrates another example of a semiconductor light emitting device according to the present disclosure.
  • the inclination angle 444 formed by the first inner surface 441 of the wall 440 and the lower surface 443 of the wall 440 is an acute angle.
  • An inclination angle 444 of the first inner surface 441 and the lower surface 443 of the wall 440 is preferably an obtuse angle as shown in FIG. 11, but does not exclude the acute angle.
  • the semiconductor light emitting device 400 is substantially the same as the semiconductor light emitting device 200 of FIG. 11.
  • FIG. 14 is a view showing another example of a semiconductor light emitting device according to the present disclosure.
  • an insulating layer 542 is formed on the first inner side surface 541 of the wall 540.
  • the wall 540 is formed of an insulating material
  • the reflective layer 543 may be formed on a part of the first inner surface 541 in the process of forming the reflective layer 543 on the inner surface of the wall 540. 543), the insulating layer 542 may be separately formed on the first inner surface 541 to reduce the risk of short circuit.
  • the semiconductor light emitting device 500 is substantially the same as the semiconductor light emitting device 200 of FIG. 11.
  • 15 to 19 are diagrams for describing an example of a method of manufacturing the semiconductor light emitting device shown in FIG. 11.
  • a substrate 210 is prepared, and bonding pads 230 are formed on upper and lower surfaces of the substrate 210 for electrical and physical connection with the semiconductor light emitting device chip 220 and the outside. do.
  • the bonding pad 230 may be formed through a pattern forming process, but is not limited thereto.
  • a substrate 210 is prepared, and bonding pads 230 are formed on upper and lower surfaces of the substrate 210 for electrical and physical connection with the semiconductor light emitting device chip 220 and the outside. do.
  • the bonding pad 230 may be formed through a pattern forming process, but is not limited thereto.
  • the bonding pads 230 are formed of gold (Au) using a pattern forming process, thereby to provide electrical and external connection between the second conductive portion 212 and the second electrode 222 and the outside of the substrate 210.
  • Au gold
  • the substrate 210 is prepared, and as shown in FIG. 15A, a mask 230a having a pattern in which a portion on which the bonding pad 230 is to be formed is exposed on the substrate 210 is exposed to the substrate 210. ).
  • a bonding pad 230 is formed in a portion exposed by the mask 230a.
  • the bonding pad 230 may be formed by a deposition or plating method, but is not limited thereto.
  • first bonding pads 231 and the second bonding pads 232 are partially disposed on the portion where the semiconductor light emitting device chip 220 is to be fixed to the upper surface of the substrate 210.
  • the third bonding pads 233 are simultaneously formed on the entire lower surface of the substrate 210 except for the insulating portion 213 of the substrate 210 for connection with the outside.
  • the bonding pad 230 is formed by removing the mask 230a through a separate etching process.
  • the wall 240 is formed on the upper surface of the substrate 210.
  • Wall 240 may be obtained through injection molding, for example, using an insulating material such as epoxy resin or silicone resin.
  • the wall 240 is not limited thereto, and may be formed of metal.
  • the wall 240 may be recognized as a pattern for correcting the position or angle at which the device transfer device (not shown) is to place the semiconductor light emitting device chip 220, and functions as a dam of the encapsulant 260. .
  • an insulating adhesive layer 270 is applied to a portion where the wall 240 is to be formed in order to form the wall 240 on the upper surface of the substrate 210.
  • the wall 240 is fixed on the substrate 210 by disposing the wall 240 on the insulating adhesive layer 270 before the insulating adhesive layer 270 is cured. That is, the insulating adhesive layer 270 is cured for a predetermined time to fix the wall 240 on the substrate 210.
  • the wall 240 on which the reflective layer 250 is formed is formed as follows.
  • a wall 240 formed by injection molding is disposed on the base 1.
  • the base 1 may be a rigid metal plate or a nonmetal plate, or may be a flexible film or tape.
  • the reflective layer 250 is formed on one surface of the second inner side surface 242 of the wall 240.
  • the reflective layer 250 may be formed using a deposition method or a spray coating.
  • the wall 240 on which the reflective layer 250 is formed is separated from the base 1.
  • the base 1 and the wall 240 may be pressed by external force to contact each other, or may adhere to each other using an adhesive material.
  • the adhesive material may be variously selected from conductive pastes, insulating pastes, polymer adhesives, and the like, and is not particularly limited. In some temperature ranges, the use of a material that loses adhesion may facilitate separation in the temperature range at the time of separation of the base 1 and the wall 240.
  • the wall 240 on which the reflective layer 250 is formed may be picked up from the base 1 and placed on the substrate 210.
  • the wall 240 on which the reflective layer 250 is formed is separated from the base 1, and at that moment, the device transfer device is formed on the reflective layer (
  • the wall 240 formed with the 250 may be electrically adsorbed or vacuum adsorbed.
  • a reflective layer 250 is formed on the substrate 210 to which the insulating adhesive layer 270 is applied using a device transfer device that recognizes a pattern of the substrate 210 and the bonding pads 230 and corrects position and angle.
  • Wall 240 may be disposed.
  • a separate device transfer device capable of recognizing a pattern of the wall 240, the first bonding pad 231, and the second bonding pad 232, and correcting a position and an angle thereof.
  • the semiconductor light emitting device chip 220 is disposed on the front surface of the substrate 210 by using a.
  • the first bonding pad 231 and the second bonding pad 232 disposed on the first electrode 221, the second electrode 222, and the upper surface of the substrate 210 of the semiconductor light emitting device chip 220 may be formed. Arrange to correspond to each other.
  • the first conductive portion 211 and the second conductive portion 212 of the substrate 210 and the semiconductor light emitting device By electrically and physically connecting the first electrode 221 and the second electrode 222 of the chip 220, the semiconductor light emitting device chip 220 is fixed to the front surface of the substrate 210.
  • the encapsulant 260 is added to the upper surface of the substrate 210 on which the semiconductor light emitting device chip 220 is disposed, and cured.
  • the encapsulant 260 may be formed using dispensing, a stencil, screen printing, or spin coating. Dispensing is preferable from the viewpoint of the uniformity of thickness, the internal density of the phosphor, and the like.
  • the encapsulant 260 may be one of an epoxy resin and a silicone resin generally used in the semiconductor light emitting device field. Meanwhile, the encapsulant 260 may be omitted. When the encapsulant 260 is omitted, the encapsulant 260 may be covered with glass or quartz.
  • the order of the manufacturing method of the semiconductor light emitting device according to the present disclosure may be included in the scope of the present disclosure as long as the skilled person can easily change.
  • the wall 240 is disposed on the substrate 210 to align the first bonding pad 231 and the second bonding pad 232 with the first electrode 221 and the second electrode 222.
  • the semiconductor light emitting device chip 220 may be first disposed before the semiconductor light emitting device chip is disposed.
  • the order of the manufacturing method of the semiconductor light emitting device according to the present disclosure may be included in the scope of the present disclosure as long as the skilled person can easily change.
  • 21 is a diagram illustrating an example of a semiconductor light emitting device according to the present disclosure.
  • FIG. 21A is a perspective view and FIG. 21B is a cross-sectional view taken along AA ′.
  • the semiconductor light emitting device 200 may include a substrate 210, a semiconductor light emitting device chip 220, a wall 230, and an encapsulant 240.
  • the substrate 210 includes a first conductive portion 211, a second conductive portion 212, and an insulating portion 213 positioned between the first conductive portion 211 and the second conductive portion 212.
  • the method of manufacturing the substrate 210 is described in Korean Patent Laid-Open No. 2012-0140454.
  • the first conductive portion 211 and the second conductive portion 212 may be formed of a metallic material such as aluminum (Al), copper (Cu), or the like.
  • the first conductive portion 211 and the second conductive portion 212 have a lead frame function in the semiconductor light emitting device of FIG. 3 and are electrically connected to the outside.
  • the first conductive portion 211 and the second conductive portion 212 have a high reflectivity and high reflectivity and excellent electrical contact, for example, silver (Ag), nickel (Ni), aluminum ( It may be formed of a metal or an alloy including at least one of Al, rhodium (Rh), lead (Pd), iridium (Ir), ruthenium (Ru), magnesium (Mg), zinc (Zn).
  • the first conductive portion 211 and the second conductive portion 212 are formed of aluminum (Al) having high efficiency of reflecting light, for example, ultraviolet rays, the light emitted from the semiconductor light emitting device chip 220 By reflecting a part, light extraction efficiency of the semiconductor light emitting device can be improved.
  • Al aluminum
  • the insulation unit 213 may be formed of an electrically insulating material, but is not limited thereto.
  • the semiconductor light emitting device chip 220 may include a first electrode 221 and a second electrode 222, and may be a lateral chip, a flip chip, or a vertical chip. However, when using a flip chip, the first electrode 221 and the second electrode 222 may be electrically connected to each other by being positioned on the first conductive portion 211 and the second conductive portion 212 without using wire bonding. desirable.
  • the wall 230 includes a first inner side 231, a second inner side 232, and a bottom side 233.
  • the wall 230 is formed on the side of the substrate 210 and surrounds the substrate 210 and the semiconductor light emitting device chip 220. That is, the bottom surface 233 of the wall 230 and the bottom surface of the substrate 210 are located on the same line line.
  • the wall 230 may be obtained through injection molding using an insulating material such as, for example, an epoxy resin or a silicone resin.
  • the height H3 of the wall 230 may be equal to or lower than the height H1 + H2 of the height H1 of the substrate 210 and the height H2 of the semiconductor light emitting device chip 220. In consideration of the optical path, the height H3 of the wall 230 may be greater than the height H1 + H2 to which the substrate 210 and the semiconductor light emitting device chip 220 are coupled.
  • the height H1 of the substrate 210 is 0.3 mm to 1 mm
  • the height H2 of the semiconductor light emitting device chip 220 is 0.1 mm to 0.3 mm
  • the height H3 of the wall 230 is It may be more than 0.4mm and less than 2mm.
  • the first inner side surface 231 is connected to the lower surface 233, and the second inner side surface 232 is connected to the first inner surface 231.
  • the first inner side surface 231 and the second inner side surface 232 are preferably inclined to improve the light extraction efficiency.
  • the inclination angle 234 of the first inner surface 231 and the lower surface 233 of the wall 230 is an obtuse angle.
  • the inclination angle 236 of the second inner side surface 232 and the imaginary surface 235 parallel to the lower surface 233 of the wall 230 is an acute angle.
  • the contact with the substrate 210 may be prevented and the risk of short may be lowered.
  • the height (H4) of the point where the first inner surface 231 and the second inner surface 232 meet is preferably 5um or more to prevent the short.
  • the encapsulant 240 is formed inside the wall 230 to cover the substrate 210 and the semiconductor light emitting device chip 220.
  • the encapsulant 240 has a light transmitting property and may be made of one of an epoxy resin and a silicone resin. If necessary, a wavelength converter (not shown) may be included.
  • FIG 22 illustrates another example of the semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device 300 includes a reflective layer 350 formed on the first inner side 331 and the second inner side 332 of the wall 330.
  • the reflective layer 350 is formed on one surface of the first inner side surface 331 and the second inner side surface 332 of the wall 330. That is, the reflective layer 350 is formed on one surface of the first inner side surface 331 and the second inner side surface 332 in contact with the encapsulant 340.
  • the reflective layer 350 is preferably made of a highly efficient metallic material that reflects light, and for example, the metallic material may be formed by coating, plating, and deposition.
  • the metallic material forming the reflective layer 350 may be, for example, silver (Ag), aluminum (Al), a distributed Bragg reflector (DBR), a highly reflective white reflector, or the like.
  • silver (Ag) is preferred in view of cost and efficiency.
  • Al is preferred in view of cost and efficiency.
  • first inner side 331 and the second inner side 332 are inclined when depositing or coating the reflective layer 350 on the first inner side 331 and the second inner side 332 of the wall 330, The efficiency of reflecting light is increased to improve light extraction efficiency.
  • the first inner side surface 331 and the second inner side surface 332 are inclined, so that there is little risk of shorting due to contact with the substrate 310.
  • the semiconductor light emitting device 200 has the same characteristics as the semiconductor light emitting device 200 shown in FIG.
  • FIG. 23 is a view illustrating another example of a semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device 400 includes a reflective layer 450 formed only on the second inner side surface 432 of the wall 430.
  • the reflective layer 450 is formed only on one surface of the second inner side surface 432 of the wall 430. That is, the reflective layer 450 is formed only on one surface of the second inner side surface 432 in contact with the encapsulant 440.
  • the reflective layer 450 is formed only on the second inner side surface 432, a short risk may be lowered between the reflective layer 450 made of a metallic material and the substrate 410.
  • the semiconductor light emitting device 200 has the same characteristics as the semiconductor light emitting device 200 shown in FIG.
  • FIG 24 illustrates another example of the semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device 500 may include a reflective layer formed only on the first inner surface 531 and the second inner surface 532 of the wall 530 having an acute angle 534 formed on the lower surface 533 of the wall 530. 550).
  • An inclination angle 534 of the first inner side surface 531 and the bottom surface 533 of the wall 530 is preferably an obtuse angle as shown in FIG. 21, but does not exclude the acute angle.
  • the semiconductor light emitting device has the same characteristics as the semiconductor light emitting device 200 described in FIG. 21.
  • 25 is a view showing another example of a semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device 600 includes an insulating layer 636 formed on the first inner side surface 631 of the wall 630 and a reflective layer 650 formed only on the second inner side surface 632.
  • the insulating layer 636 may be formed on the reflective layer 650. After the formation, the insulation layer 636 may be separately formed on the first inner surface 631 to reduce the risk of short circuit.
  • the semiconductor light emitting device 200 has the same characteristics as the semiconductor light emitting device 200 shown in FIG.
  • 26 is a view for explaining an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure.
  • a wall 730 is disposed on a base 700.
  • the wall 730 can be obtained through injection molding.
  • Base 700 may be a flexible film or tape, or a rigid metal plate or a nonmetal plate.
  • the film or tape is also not particularly limited and is preferably sticky or adhesive and has heat resistance.
  • heat resistant tape, blue tape, or the like may be used, and various colors or light reflectances may be selected.
  • the metal plate is not particularly limited, and for example, Al, Cu, Ag, Cu-Al alloys, Cu-Ag alloys, Cu-Au alloys, SUS (stainless steel), and the like may be used. Of course you can use it.
  • Plastics can be used as nonmetallic plates, and various colors and light reflectances can be selected.
  • the reflective layer 750 is formed on one surface of the second inner side surface 732 of the wall 730.
  • the reflective layer 750 may be formed using spray coating, spin coding, or the like.
  • the semiconductor light emitting device chip 720 coupled to the substrate 710 is disposed in the wall 730.
  • the semiconductor light emitting device chip 720 coupled to the substrate 710 may be disposed on the base 700 using a device transfer device (not shown) capable of recognizing a pattern of the wall 730 and correcting position and angle. .
  • the first electrode 721 and the second electrode 722 of the semiconductor semiconductor light emitting device chip 720 are positioned on the first conductive portion 711 and the second conductive portion 712 of the substrate 710, respectively. It is electrically and physically connected.
  • a flip chip is suitable as the semiconductor light emitting device chip 720, but it does not exclude a lateral chip or a vertical chip.
  • the encapsulant 740 is introduced into the wall 730 in which the semiconductor light emitting device chip 720 is disposed, and is formed and cured.
  • the encapsulant 740 may be formed using dispensing, a stencil, screen printing, or spin coating. Dispensing is preferable from the viewpoint of the uniformity of thickness, the internal density of the phosphor, and the like.
  • the substrate 710 coupled with the semiconductor light emitting device chip 720 is fixed to the base 700 by the encapsulant 740.
  • the encapsulant 740 may be one of an epoxy resin and a silicone resin generally used in the semiconductor light emitting device field. Meanwhile, the encapsulant 740 may be omitted. When the encapsulant 740 is omitted, the encapsulant 740 may be covered with glass or quartz.
  • the substrate 710, the semiconductor light emitting device chip 720, and the wall 730 coupled by the encapsulant 740 are separated from the base 700.
  • the substrate 710, the semiconductor light emitting device chip 720, and the wall 730 coupled by the base 700 and the encapsulant 740 are pressed by external force to contact each other or by using an adhesive material.
  • the adhesive material may be variously selected from conductive pastes, insulating pastes, polymer adhesives, and the like, and is not particularly limited. In a certain temperature range, when a material that loses adhesive strength is used, the temperature is separated when the substrate 710, the semiconductor light emitting device chip 720, and the wall 730 coupled by the base 700 and the encapsulant 740 are separated. It can be easily separated in the range.
  • the substrate 710, the semiconductor light emitting device chip 720, and the wall 730 coupled by the encapsulant 740 are picked up from the base 700 using an element transfer device (not shown). up) to separate it from the base 700.
  • the encapsulant 740 is formed from the base 700 by hitting the substrate 710, the semiconductor light emitting device chip 720, and the wall 730 coupled by the pin or rod encapsulant 740 under the base 700.
  • the substrate 710, the semiconductor light emitting device chip 720, and the wall 730 coupled by each other fall off, and at that moment, the device transfer device is coupled to the substrate 710 and the semiconductor light emitting device chip 720 by the encapsulant 740.
  • the wall 730 may be electrically adsorbed or vacuum adsorbed.
  • the order of the manufacturing method of the semiconductor light emitting device according to the present disclosure may be included in the scope of the present disclosure as long as the skilled person can easily change.
  • FIG. 27 is a diagram illustrating an example of a semiconductor light emitting device according to the present disclosure.
  • FIG. 27 (b) is sectional drawing along AA '.
  • the semiconductor light emitting device 200 includes a body 210, a semiconductor light emitting device chip 220, and an encapsulant 230.
  • Body 210 includes sidewall 211 and bottom 212, and includes a cavity 214 defined by sidewall 211 and bottom 212.
  • the body 210 may be obtained through injection molding using, for example, an insulating material based on resin or ceramic.
  • Sidewall 211 includes an outer side 217 and an inner side 218.
  • the height H of the side wall 211 may be smaller than the length L of the bottom portion 212.
  • the height H of the side wall 211 may be 0.1 mm or more and 0.6 mm or less, and the length L of the bottom portion 212 may be 0.5 mm or more.
  • the side wall 211 may also be absent as needed (not shown).
  • the bottom portion 212 includes a hole 213.
  • the size of the hole 213 is similar to that of the semiconductor light emitting device chip 220 or 1.5 times the size of the semiconductor light emitting device chip 220.
  • the inner surface 240 of the bottom portion 212 forming the hole 213 is preferably inclined to improve the light extraction efficiency.
  • the semiconductor light emitting device chip 220 is located in the hole 213.
  • the semiconductor light emitting device chip 220 may be a lateral chip, a vertical chip, and a flip chip.
  • the flip chip is preferable in that the electrode 221 of the semiconductor light emitting device chip 220 is exposed toward the bottom surface 216 of the bottom portion 212 of the body 210.
  • the height 219 of the bottom portion 212 is preferably lower than the height 222 of the semiconductor light emitting device chip 220. This is because when the height 219 of the bottom 212 is higher than the height 222 of the semiconductor light emitting device chip 220, the light extraction efficiency of the semiconductor light emitting device 200 may decrease. However, although the light extraction efficiency may be reduced, the height 219 of the bottom portion 212 may be higher than the height of the semiconductor light emitting device chip 220 in consideration of an optical path.
  • the height 219 of the bottom part 212 and the height 222 of the semiconductor light emitting device chip 220 may be measured based on the bottom surface 216 of the bottom part 212.
  • the height 222 of the semiconductor light emitting device chip 220 may be 0.05 mm or more and 0.5 mm or less.
  • the height 219 of the bottom 212 may be 0.08 mm or more and 0.4 mm or less.
  • the encapsulant 230 is provided in the cavity 214 to cover the semiconductor light emitting device chip 220, so that the semiconductor light emitting device chip 220 positioned in the hole 213 may be fixed to the body 210.
  • the encapsulant 230 is light-transmissive and may be made of one of an epoxy resin and a silicone resin, for example. If necessary, the encapsulant 230 may include a wavelength converting member 231.
  • the wavelength converting material 231 may be any type as long as it converts light generated from the active layer of the semiconductor light emitting device chip 220 into light having a different wavelength (eg, a pigment, a dye, etc.). Example: YAG, (Sr, Ba, Ca) 2 SiO 4 : Eu, etc.) is preferably used.
  • the wavelength conversion material 231 may be determined according to the color of light emitted from the semiconductor light emitting device, and is well known to those skilled in the art.
  • the semiconductor light emitting device 300 includes a junction 330. Except for the junction portion 330, the semiconductor light emitting device 200 has the same characteristics as the semiconductor light emitting device 200 shown in FIG.
  • the junction 330 is located on the bottom 312 of the bottom 311 of the body 310.
  • the junction 330 is spaced apart from the electrode 321 of the semiconductor light emitting device chip 320 exposed in the direction of the bottom 312 of the bottom 311.
  • the bonding force may be improved compared to the case where the semiconductor light emitting device 300 is bonded only to the electrode 321.
  • the junction 330 may be metal.
  • the junction 330 may be one of silver (Ag), copper (Cu), and gold (Au).
  • the junction 330 may be a combination of two or more metals.
  • it may be one of a combination of nickel (Ni) and copper, a combination of chromium (Cr) and copper, and a combination of titanium (Ti) and copper.
  • the junction 330 may be variously combined in a range that can be easily changed by those skilled in the art.
  • FIG. 28B is a bottom view of FIG. 28A, and the arrangement of the electrode 321 and the junction part 330 can be confirmed.
  • the junction part 330 may be in contact with the electrode 321 of the semiconductor light emitting device chip 320 to perform an electrode function.
  • 29 illustrates another example of the semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device 400 includes a reflective material 430 between the bottom 411 of the body 410 and the semiconductor light emitting device chip 420. Except for the reflective material 430, the semiconductor light emitting device 300 has the same characteristics as the semiconductor light emitting device 300 of FIG. 28.
  • the reflective material 430 is positioned on the side of the semiconductor light emitting device chip 420, the light emitted from the side of the semiconductor light emitting device chip 420 may be reflected, thereby improving light extraction efficiency of the semiconductor light emitting device 400.
  • the reflective material 430 is preferably a white reflective material.
  • it may be a white silicone resin.
  • the reflective material 430 may be positioned to form a space 431 between the reflective material 430 and the semiconductor light emitting device chip 420.
  • FIG. 30 illustrates another example of a semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device 500 includes a reflective layer 530 on at least one of the inner surface 513 of the sidewall 511 of the body 510 and the upper surface 514 of the bottom 512. Except for the reflective layer 530, the semiconductor light emitting device 300 has the same characteristics as the semiconductor light emitting device 300 of FIG. 28.
  • the reflective layer 530 may be formed on the entire upper surface 514 of the bottom portion 512 of the body 510.
  • the reflective layer 530 may be made of aluminum (Al), silver (Ag), a distributed Bragg reflector (DBR), a highly reflective white reflector, or the like.
  • the semiconductor light emitting device chip 150 should be bonded to the lead frames 110 and 120 in the conventional semiconductor light emitting device 100 as shown in FIG. 3, the reflective layer of the metal having good reflection efficiency is the semiconductor light emitting device chip 150.
  • the entire upper surfaces of the lead frames 110 and 120 to be joined could not be formed due to an electrical short problem.
  • the metal having high reflection efficiency may be used.
  • the reflective layer 530 may be formed on the entire upper surface 514 of the bottom portion 512.
  • the light extraction efficiency of the semiconductor light emitting device 500 may be improved by forming the metal reflective layer 530 having high reflection efficiency on the entire upper surface 514 of the bottom portion 512.
  • the reflective layer 530 may be located at the side of the hole.
  • FIG 31 illustrates another example of the semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device 600 includes a plurality of holes 612 in the bottom portion 611 of the body 610, and the semiconductor light emitting device chip 620 is positioned in each hole 612.
  • the semiconductor light emitting device 300 has the same characteristics as the semiconductor light emitting device 300 of FIG. 28 except that the semiconductor light emitting device chip 620 is positioned in the plurality of holes 612 and each hole 612. Although a plurality of holes 612 are illustrated in FIG. 31, two or more holes are not limited thereto.
  • the semiconductor light emitting device chips 620 disposed in the holes 612 may emit different colors.
  • FIG. 32 is a view showing another example of a semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device 700 may have an inner surface of the bottom portion 712 except for a portion 717 of the bottom surface 716 of the bottom portion 712 of the bottom portion 712 of the body 710. 715, a reflective layer 730 formed on the upper surface 714 of the bottom 712 and the inner surface 713 of the sidewall 711. Except for the reflective layer 730, the semiconductor light emitting device 300 has the same characteristics as the semiconductor light emitting device 300 described with reference to FIG. 28.
  • a metal reflective layer 730 having a high reflectance efficiency may have an inner surface 713 of the sidewall 711, an upper surface 714 of the bottom 712, and a portion 171 of the inner surface 715 of the bottom 712. By being formed in the excluded portion, it is possible to prevent a short risk while improving the light extraction efficiency of the semiconductor light emitting device 700.
  • the reflective layer 730 may be made of aluminum (Al), silver (Ag), a distributed Bragg reflector (DBR), a highly reflective white reflector, or the like.
  • the reflective layer 730 may be formed on the upper surface of the body 710.
  • FIG. 33 illustrates a method of manufacturing a semiconductor light emitting device according to the present disclosure
  • FIG. 34 illustrates a method of manufacturing a reflective layer according to the present disclosure.
  • a body 810 including a hole 813 formed in the bottom portion 812 is prepared (S1).
  • the body 810 may be obtained through injection molding, for example, using a resin-based or ceramic-based insulating material.
  • the body 810 may be fixed and supported by the base 1, which is a temporary fixing plate.
  • the base 1 can be a general adhesive tape. For example, it may be a blue tape.
  • the reflective layer 830 is formed on the inner surface of the body 810 (S2).
  • the inner surface 831 of the body 810 has a plurality of grooves (S21).
  • the inner surface 831 of the body 810 may be formed as an uneven surface including a groove having a regular period or a groove having an irregular period when manufactured by injection molding according to a mold or a mechanical method. have.
  • an insulating material is coated on the inner surface 831 of the body 810 to form a coating layer 832 (S22).
  • the coating layer 832 may be formed using a resin-based insulating material made of a liquid on the inner surface 831 of the body 810 in which the groove is formed.
  • the coating layer 832 may be formed of an epoxy resin, a silicone resin, or a polydimethylsiloxane (PDMS) -based resin, and may be formed using a spray coating, a dipping coating, or a surface brushing coating.
  • PDMS polydimethylsiloxane
  • the coating layer 832 is made of a liquid resin, and preferably has a thickness of about 10 ⁇ m or less.
  • the reflective layer 830 is formed on the inner surface 831 of the body 810 by using a liquid resin to form a resin coating layer 832 with a thickness of about 10 ⁇ m or less, so that the thickness of the reflective layer 830 is thin and the body ( The manufacturing cost can be reduced while increasing the bonding force with 810.
  • the surface of the coating layer 832 in contact with the inner surface 831 of the body 810 is formed of a non-flat surface by filling a liquid resin in the groove formed in the inner surface 831 of the body 810, the metal layer 833 described later
  • the surface of the coating layer 832 in contact with is formed as a flat surface.
  • a metal reflective material is deposited on the surface of the coating layer 832 to form a metal layer 833 to form a reflective layer 830 (S23).
  • the metal layer 833 in contact with the coating layer 832 is formed as a flat surface as a whole.
  • the metal layer 833 is formed as a flat surface, the efficiency of reflecting light emitted from the semiconductor light emitting device chip 820 may be greatly increased.
  • the thickness of the metal layer 833 is preferably formed to be thicker than the thickness of the coating layer 832, the thickness of the metal layer 833 may be the same as or thinner than the thickness of the coating layer 832.
  • the metal layer 833 has a high efficiency of reflecting light and has excellent reflectivity and excellent electrical bonding properties, for example, silver (Ag), nickel (Ni), aluminum (Al), rhodium (Rh), and lead ( Pd), iridium (Ir), ruthenium (Ru), magnesium (Mg), it may be formed of a metal or alloy containing at least one of zinc (Zn).
  • the metal layer 833 is preferably aluminum (Al) in consideration of cost and efficiency.
  • the thickness of the reflection layer was formed thick by using the gloss plating method.
  • the reflective layer is preferably aluminum (Al) in consideration of cost and efficiency, but aluminum (Al) plating was not possible when forming the reflective layer by a bright plating method. Therefore, the peeling or bonding force of the reflective layer is lowered by the stress, and there is a problem that the manufacturing cost increases.
  • the reflective layer 830 is formed by forming the reflective layer 830 using the resin coating layer 832 on the inner surface 831 of the body 810 using a liquid resin with a thickness of about 10 ⁇ m or less.
  • the thickness of the thinner can increase the bonding force with the body 810 while reducing the manufacturing cost.
  • the reflective layer 830 may be formed before the semiconductor light emitting device chip 820 is disposed, and thus the reflective layer 830 may be formed on the inner side surface of the hole 813.
  • the reflective layer 830 may not be formed at a portion of the inner surface of the body 810 adjacent to the hole 813, so that a short risk may be lowered.
  • the semiconductor light emitting device chip 820 is disposed in each of the holes 813 (S3).
  • the semiconductor light emitting device chip 820 is disposed in the hole 813 using an element transfer device (not shown).
  • the body 810 may be recognized as a pattern for correcting the position or angle at which the device transfer device places the semiconductor light emitting device chip 820, and together with the dam, serves as a dam of the encapsulant 840.
  • an encapsulant 840 is introduced into the body 810 (S4).
  • the base 1 is removed and the junction part 850 is formed (S5).
  • the exposed electrode 821 of the semiconductor light emitting device chip 820 and the bonding portion 850 are bonded to the external substrate. Bonding of the electrode 821 and the junction portion 850 of the semiconductor light emitting device chip 820 and the external substrate may be performed by soldering using a solder material. Since the junction part 850 is positioned between the semiconductor light emitting device chips 820, the bonding force may be improved as compared with the case where only the electrodes 821 of the semiconductor light emitting device chip 820 are in contact with each other.
  • a reinforcing material (not shown) may be formed instead of the adhesive part 850. If the reinforcement is located between the upper and lower surfaces of the body bottom, the reinforcement may be inserted when the body is made. By forming the reinforcing material, the bonding force can be improved while compensating for the problem of bending due to warping or bending.
  • the order of the manufacturing method of the semiconductor light emitting device according to the present disclosure may be included in the scope of the present disclosure as long as the skilled person can easily change.
  • FIG. 35 is a view illustrating still another example of a semiconductor light emitting device according to the present disclosure.
  • (A) is a perspective view
  • FIG. 35 (b) is sectional drawing along BB '.
  • the semiconductor light emitting device 700 includes a plurality of holes 713 and 714 formed in the bottom direction 712 of the body 710 in the longitudinal direction, and the bottom part 712 formed in the sidewall 711 of the body 710.
  • the semiconductor light emitting device chip 720 formed in the first hole 713, the reinforcing material 750 formed in the second hole 714 of the bottom part 712 positioned between the semiconductor light emitting device chip 720, and the reinforcing material.
  • the reflective material 760 is filled in the second hole 714 in which the 750 is formed.
  • the bottom part 712 has a long direction (x direction) and a unidirectional direction (y direction), and the long direction may have a size five times greater than the unidirectional direction.
  • the present invention is not limited thereto, and the bottom portion 712 may be formed to be longer in the longitudinal direction than in the unidirectional direction.
  • a plurality of holes 713 and 714 and a semiconductor light emitting device chip 720 are positioned in the first hole 713, and the reinforcement 750 and the reflective material 760 are formed in the second hole 714. Except for this position, it has the same characteristics as the semiconductor light emitting device 200 shown in FIG. 35 illustrates a plurality of holes 713 and 714, but three or more holes are not limited thereto.
  • the semiconductor light emitting device chip 720 is positioned in the first hole 713 of the bottom part 712 formed on the sidewall 711 of the body 710.
  • the semiconductor light emitting device chip 720 is formed in each of the first holes 713 of the bottom part 712 formed on both sidewalls 711 of the body 710.
  • the side wall 711 serves as a dam of the encapsulant 730.
  • the semiconductor light emitting device chips 720 positioned in the first holes 713 may emit different colors.
  • the reinforcing material 750 is positioned in the second hole 714 of the bottom portion 712 positioned between the semiconductor light emitting device chips 720.
  • the reinforcement 750 is preferably disposed not to overlap the bottom portion 712 where the first hole 713 is formed.
  • the lower surface 751 of the reinforcing material 750 is exposed in the direction of the lower surface 716 of the bottom portion 712.
  • the body 710 is positioned away from the electrode 721 of the semiconductor light emitting device chip 720 exposed in the direction of the bottom surface 716 of the bottom portion 712.
  • the electrode 721 of the semiconductor light emitting device chip 720 protrudes from the bottom portion 712.
  • the height 752 of the reinforcement 750 may be formed lower than the height 719 of the bottom 712. However, the height 752 of the reinforcement 750 is not limited thereto. It may be formed higher than or equal to).
  • the width 753 of the reinforcement 750 may be formed smaller than the width 7140 of the second hole 714, but the width 753 of the reinforcement 750 is not limited thereto. It may be formed to be the same as the width 7140 of the second hole 714 located in.
  • the width 7140 of the second hole 714 is preferably larger than the width of the first hole 713.
  • the second hole 714 is preferably formed larger than the first hole 713 in order to prevent the bending of the body 710 due to the bending or the bending.
  • the second hole 714 may be smaller or the same.
  • the length of the bottom surface 751 of the reinforcement 750 protruding toward the bottom surface 716 of the bottom portion 712 is preferably equal to the length of the electrode 721 of the semiconductor light emitting device chip 720.
  • the semiconductor light emitting device 700 illustrated in FIG. 35 is formed in a long direction, a reflow process is performed to bond the semiconductor light emitting device 700 to an external substrate by using surface mounter technology (SMT) equipment.
  • SMT surface mounter technology
  • the bottom portion 712 located between the semiconductor light emitting device chips 720 is bent due to heat, so that soldering is not performed smoothly or warpage occurs, thereby causing a problem of breaking the body 710.
  • the reinforcing material 750 is positioned between the semiconductor light emitting device chips 720, the bending problem of the body 710 may be compensated for. That is, since the second hole 714 is positioned in the bottom portion 712 located between the semiconductor light emitting device chips 720, the pressure due to heat is less than that of the related art, and thus the problem of warpage may be alleviated.
  • the semiconductor light emitting device 700 is external due to the bottom surface 751 of the reinforcing material 750 protruding by the length of the electrode 721 of the semiconductor light emitting device chip 720 toward the bottom surface 716 of the bottom part 712.
  • the bonding force may be improved than when only the electrode 721 of the semiconductor light emitting device chip 720 is in contact.
  • Such a reinforcing material 750 may be made of a non-conductive metal having a high bonding strength.
  • the reinforcement 750 may be one of copper (Cu) and gold (Au).
  • the reinforcement 750 may be a combination of two or more metals.
  • it may be one of a combination of nickel (Ni) and copper, a combination of chromium (Cr) and copper, and a combination of titanium (Ti) and copper.
  • the reinforcement 750 may be variously combined within a range easily changed by those skilled in the art.
  • the reflective material 760 filled in the second hole 714 in which the reinforcing material 750 is formed is formed of a material that reflects light.
  • it may be formed of a highly reflective white reflective material, ie, white silicon, having a high reflectance.
  • the reflective material 760 is disposed on the upper surface of the reinforcing material 750, the light emitted by the wavelength converting material 731 may be reflected to improve light extraction efficiency of the semiconductor light emitting device 700.
  • FIG 36 illustrates another example of the semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device 800 includes a metal reflective layer 880 formed on the front surface of the reinforcing material 850 formed in the second hole 814 of the bottom part 812 located between the semiconductor light emitting device chips 820. Except for the metal reflective layer 880, it has the same characteristics as the semiconductor light emitting device 700 shown in FIG.
  • the metal reflective layer 880 is located on the upper surface of the reinforcing material 850, the light emitted by the wavelength converting material 831 may be reflected to improve light extraction efficiency of the semiconductor light emitting device 800.
  • the metal reflective layer 880 is preferably made of a metallic material having high efficiency of reflecting light, and for example, the metallic material may be formed by a method such as coating, plating, and deposition.
  • the metallic material forming the metal reflective layer 880 may be formed of, for example, silver (Ag), aluminum (Al), or the like.
  • the metal reflective layer 870 may be located on the bottom surface of the reinforcing material 850 as shown in FIG. 36 (b).
  • FIG. 37 is a view showing another example of a semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device 900 includes a plurality of second holes 914 in which bottom portions 912 positioned between the semiconductor light emitting device chips 920 are spaced apart from each other, and each of the second holes 914 includes a reinforcing material ( 950 and reflective material 960 are located. Same as the semiconductor light emitting device 700 of FIG. 35 except that the reinforcing material 950 and the reflecting material 960 are disposed in the plurality of second holes 914 and the second holes 914 spaced apart from each other. Has characteristics.
  • the plurality of second holes 914 is illustrated as three, but three or more holes are not limited thereto.
  • the widths of the plurality of second holes 914 may be formed to be different or the same as each other.
  • a metal reflecting layer is disposed on the upper surface or the upper surface of the reinforcing material 950 instead of the reflecting material 960 filled in the plurality of second holes 914, if necessary, to be radiated by the wavelength converter 931. By reflecting light, the light extraction efficiency of the semiconductor light emitting device 900 may be improved.
  • the semiconductor light emitting device 1000 includes reflective layers 1070 and 1071 having high reflectance in order to efficiently reflect light emitted from the side surface of the semiconductor light emitting device chip 1020. Except for the reflective layers 1070 and 1071, they have the same characteristics as the semiconductor light emitting device 700 shown in FIG.
  • the reflective layers 1070 and 1071 are preferably made of a highly efficient metallic material that reflects light, and for example, the metallic material may be formed by coating, plating, and deposition.
  • Examples of the metallic material forming the reflective layers 1070 and 1071 include silver (Ag) and aluminum (Al), but aluminum (Al) is preferable in consideration of cost and efficiency.
  • the reflective layer 1070 may include an inner surface 1018 of the sidewall 1017, an upper surface 1015 of the bottom 1012, and one surface of an inner surface 1040 of the bottom 1012. Is formed.
  • the inner surface 1018 of the wall 1017, the upper surface 1015 of the bottom portion 1012 and the inner surface 1040 of the bottom portion 1012 are positioned in a line. That is, the reflective layer 1070 is formed on one surface of the body 1010 connecting to the encapsulant 1030 covering the semiconductor light emitting device chip 1020.
  • the light extraction efficiency of the semiconductor light emitting device 1000 may be improved by forming the metal reflective layer 1070 having a high reflection efficiency on the entire inner surface of the body 1010.
  • the reflective layer 1071 may be formed of the bottom portion 1012 of the inner side surface 1040 of the bottom portion 1012 except for the portion 1041 of the bottom portion 1012 of the bottom portion 1012. It is formed only on the inner surface 1040, the upper surface 1015 of the bottom portion 1012 and the inner surface 1018 of the side wall 1017. As a result, the reflective layer 1071 is formed at a portion other than the portion 1041 of the bottom portion 1012, whereby a short risk can be prevented.
  • a reflective layer may be formed on the upper surface of the body 1010.
  • a reflective layer may be formed by applying a metallic material or a DBR distributed Bragg reflector (DBR) to the top surface of the body 1010.
  • DBR distributed Bragg reflector
  • 39 is a view showing another example of a semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device 1100 includes a functional device 2000 positioned in the second hole 1114 of the bottom portion 1112 of the body 1110 positioned between the semiconductor light emitting device chips 1120. Except for the functional device 2000 formed in the second hole 1114, the semiconductor light emitting device 700 has the same characteristics as the semiconductor light emitting device 700 illustrated in FIG. 35.
  • the functional device 2000 is, for example, a protecting element (eg, a zener diode) that protects the semiconductor light emitting device chip 1120 from electrostatic discharge (ESD) and / or electrical over-stress (EOS).
  • a protecting element eg, a zener diode
  • ESD electrostatic discharge
  • EOS electrical over-stress
  • the electrode 2001 of the functional device 2000 is exposed and positioned in the same direction as the electrode 1121 of the light emitting device chip 1120, that is, the lower surface 1116 of the bottom portion 1112 of the body 1100.
  • the second hole 1114 in which the functional device 2000 is formed is filled with the reflective material 1160.
  • FIG 40 illustrates another example of the semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device 1200 may include a plurality of second holes 1214 in which bottom parts 1212 positioned between the semiconductor light emitting device chips 1220 are spaced apart from each other, and a bottom part adjacent to the semiconductor light emitting device chips 1220.
  • the reinforcement 1250 and the reflective material 1260 are positioned in the second hole 1214 of the 1212, and the functional element 2100 is disposed between the second hole 1214 where the reinforcement 1250 and the reflective material 1260 are located.
  • a reflective material 1260 is located. Except that the reinforcement 1250 and the reflective material 1260 and the functional element 2100 and the reflective material 1260 are positioned in the plurality of second holes 1214 and each of the second holes 1214 spaced apart from each other. It has the same characteristics as the semiconductor light emitting element 700 shown in FIG.
  • the plurality of second holes 1214 spaced apart from each other may be formed to have different widths from each other, but is not limited thereto and may be formed to have the same width.
  • FIG. 41 is a view illustrating an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure
  • FIG. 42 is a view illustrating an example of another method of manufacturing a semiconductor light emitting device according to the present disclosure.
  • a body 900 including a plurality of holes 1313 and 1314 formed in the bottom portion 1312 in the longitudinal direction is prepared (S1).
  • the body 1310 may be obtained through injection molding.
  • the body 1310 may be fixed and supported by the base 1, which is a temporary fixing plate.
  • the base 1 can be a general adhesive tape. For example, it may be a blue tape.
  • the first hole 1313 is located at the bottom 1312 formed in both sidewalls 1311 of the body 1310, and the second hole 1314 is located at the bottom 1312 between the first holes 1313. do.
  • the width of the second hole 1314 is wider than the width of the first hole 1313.
  • the width of the second holes 1314 is the same as or smaller than the width of the first holes 1313. Can be.
  • the semiconductor light emitting device chip 1320 is disposed in each of the first holes 1313 (S2).
  • the semiconductor light emitting device chip 1320 is disposed in the first hole 1313 using an element transfer device (not shown).
  • the body 1310 may be recognized as a pattern for correcting a position or an angle at which the device transfer device is to place the semiconductor light emitting device chip 220, and functions as a dam of the encapsulant 1330.
  • the reinforcing material 1350 is disposed in the second hole 1314 (S3).
  • the reflective material 1360 is filled in the second hole 1314 in which the reinforcing material 1350 is disposed (S4).
  • an encapsulant 1330 is introduced into the body 1310 (S5).
  • the reinforcing material 1350 may be disposed in the second hole 1314 by coating the metal reflective layer 1380 (S31).
  • the encapsulant 1330 is directly injected without forming a reflective material 1360 (S51).
  • the base 1 is removed, and the exposed electrode 1321 of the semiconductor light emitting device chip 1320 and the bottom surface of the reinforcing material 1350 are bonded to the external substrate.
  • the electrode 1321 and the reinforcing material 1350 of the semiconductor light emitting device chip 1320 and the external substrate may be bonded by soldering using a solder material.
  • the reinforcing material 1350 is positioned between the semiconductor light emitting device chips 1320, thereby compensating for the problem of bending or bending caused by the bending of the body 1310, and contacting only the electrode 1321 of the semiconductor light emitting device chip 1320. Bonding force can be improved.
  • the order of the manufacturing method of the semiconductor light emitting device according to the present disclosure may be included in the scope of the present disclosure as long as the skilled person can easily change.
  • Fig. 43 illustrates another example of the semiconductor light emitting device according to the present disclosure.
  • Fig. 43 (a) is a perspective view
  • Fig. 43 (b) is a sectional view taken along CC '
  • Fig. 43 (c) is a sectional view of another example of Fig. 43 (b)
  • Fig. 43 (d) is Fig. 43 (b).
  • the semiconductor light emitting device 1400 includes a bottom portion 1412 including a plurality of holes 1413 and 1414 formed in a longitudinal direction, a sidewall 1411 including two open sections 1401 and 1402, and a bottom portion 1412.
  • the semiconductor light emitting device chip 1420 formed in the first hole 1413 of the second reinforcement, the reinforcing material 1450 formed in the second hole 1414 of the bottom portion 1412 positioned between the semiconductor light emitting device chip 1420, and the reinforcing material
  • the reflective material 1460 is filled in the second hole 1414 formed with the 1450.
  • the bottom portion 1412 has a longitudinal direction (x direction) and a unidirectional direction (y direction), and the longitudinal direction may have a size five times greater than the unidirectional direction.
  • Sidewall 1411 includes two open sections 1401, 1402.
  • the two open sections 1401 and 1402 are preferably located facing each other on the long side.
  • the semiconductor light emitting device 1400 may emit light through the upper and open sections 1401 and 1402 of the semiconductor light emitting device 1400. Accordingly, the semiconductor light emitting device 1400 may emit light on three surfaces.
  • the height 1403 of the bottom portion 1412 is lower than the height 1421 of the semiconductor light emitting device chip 1420. Since the height 1403 of the bottom portion 1412 is lower than the height 1421 of the semiconductor light emitting device chip 1420, light extraction efficiency of the semiconductor light emitting device 1400 that emits three surfaces as shown by the arrow shown in FIG. This can be further increased.
  • the semiconductor light emitting device 1400 includes two open sections 1401 and 1402, but is not limited thereto and may include one or two or more open sections.
  • the semiconductor light emitting device 1400 is not completely removed from the sidewalls 1411 of the open sections 1401 and 1402, but partially remains to allow light to exit to the side of the semiconductor light emitting device 1400. You can adjust the angle or amount of light.
  • the semiconductor light emitting device 1400 may emit light toward the side of the semiconductor light emitting device 1400 by removing the sidewall 1411 along the cutting line 1404.
  • the semiconductor light emitting device 1400 is substantially the same as the semiconductor light emitting device 700 of FIG. 35.
  • a semiconductor light emitting device comprising: a substrate comprising a first conductive portion, a second conductive portion, and an insulating portion located between the first conductive portion and the second conductive portion; A body disposed on the substrate and including a bottom portion, the body having a hole formed in the bottom portion; A semiconductor light emitting device chip disposed on a substrate exposed by a hole and electrically connected to a substrate, comprising: a semiconductor having a plurality of semiconductor layers generating ultraviolet rays by recombination of electrons and holes, and electrodes electrically connected to the plurality of semiconductor layers Light emitting device chip; And a reflective layer formed on at least a portion of an inner surface of the body.
  • the semiconductor light emitting device chip and the substrate may be covered with an encapsulant, glass or quartz.
  • the semiconductor light emitting device has a width of the upper opening of the body larger than that of the semiconductor light emitting device chip.
  • the body includes a first surface connected to the lower surface of the body, a second surface connected to the first surface, and a third surface connected to the second surface, the width of the opening of the second surface of the body is the width of the opening of the lower surface of the body A semiconductor light emitting element that is larger and smaller than the width of the opening in the upper surface of the body.
  • a semiconductor light emitting element wherein the reflective layer is formed on the first, second and third surfaces other than a part of the first surface of the body in contact with the substrate.
  • the first and third surfaces of the body have a tilt angle inclined to the bottom surface of the body.
  • the semiconductor light emitting device in which the inclination angle of the first surface of the body and the bottom surface of the body is between 45 ° and 90 °.
  • the height of the second surface of the body is greater than the height of the semiconductor light emitting device.
  • a semiconductor light emitting device chip comprising a first electrode and a second electrode, wherein the first electrode is positioned on the first conductive portion and the second electrode is positioned on the second conductive portion and electrically connected.
  • a semiconductor light emitting element comprising a body including sidewalls and a cavity formed by the sidewalls and the bottom portion.
  • a semiconductor light emitting device comprising: a substrate comprising a first conductive portion, a second conductive portion, and an insulating portion located between the first conductive portion and the second conductive portion;
  • a semiconductor light emitting device chip disposed on a substrate and electrically connected to a substrate, comprising: a semiconductor light emitting device chip having a plurality of semiconductor layers generating ultraviolet rays by recombination of electrons and holes, and electrodes electrically connected to the plurality of semiconductor layers;
  • An encapsulant covering a semiconductor light emitting device chip;
  • a bonding pad interposed between the substrate and the semiconductor light emitting device chip and electrically connecting the electrode and the substrate;
  • a reflective layer formed on an inner surface of the wall in contact with the
  • the bonding pad is a semiconductor light emitting element made of a different material from the reflective layer.
  • a bonding pad is a semiconductor light emitting element located between each of the first conductive portion and the second conductive portion and the electrode of the light emitting element chip.
  • An electrode of a semiconductor light emitting device chip includes a first electrode and a second electrode, wherein the first electrode is positioned on the first conductive portion and the second electrode is positioned on the second conductive portion to be electrically connected.
  • a bonding pad is a semiconductor light emitting element further located on a lower surface of a substrate, which is the opposite surface of the upper surface in contact with the light emitting element chip.
  • a semiconductor light emitting element wherein the wall comprises a first surface which is connected to the lower surface of the wall, and a second surface which is connected to the first surface, and the reflective layer is not formed on the first surface of the wall but is formed only on the second surface.
  • a semiconductor light emitting device comprising: a substrate comprising a first conductive portion, a second conductive portion, and an insulating portion located between the first conductive portion and the second conductive portion; A semiconductor light emitting device chip disposed on the substrate and electrically connected to the substrate; And a wall disposed on a side surface of the substrate and surrounding the semiconductor light emitting device chip and the substrate, the wall including a first surface connected to a lower surface of the wall and a second surface connected to the first surface. And a lower surface of the substrate are on the same line.
  • the semiconductor light emitting device chip and the substrate may be covered with an encapsulant, glass or quartz.
  • a semiconductor light emitting element having an obtuse angle between the bottom surface of the wall and the first surface.
  • a semiconductor light emitting element having an acute inclination angle formed by a second surface of the wall and an imaginary surface parallel to the lower surface of the wall.
  • a semiconductor light emitting element comprising reflective layers formed on first and second surfaces of a wall.
  • a semiconductor light emitting element comprising a reflection layer formed only on the second surface of the wall.
  • a semiconductor light emitting element having inclination angles inclined toward a lower surface of the wall.
  • a semiconductor light emitting device chip comprising a first electrode and a second electrode, wherein the first electrode is positioned on the first conductive portion and the second electrode is positioned on the second conductive portion and is electrically connected.
  • a semiconductor light emitting device chip comprising: a semiconductor light emitting device having a plurality of semiconductor layers which generate ultraviolet rays by recombination of electrons and holes, and electrodes electrically connected to the plurality of semiconductor layers.
  • a semiconductor light emitting device comprising: a body including a bottom portion, the body having a hole formed in the bottom portion;
  • a semiconductor light emitting device chip disposed on a substrate exposed by a hole and electrically connected to a substrate, comprising: a semiconductor having a plurality of semiconductor layers generating ultraviolet rays by recombination of electrons and holes, and electrodes electrically connected to the plurality of semiconductor layers Light emitting device chip; And a reflective layer formed on at least a portion of the inner side of the body, the reflective layer comprising: a coating layer having a first thickness by coating an insulating material on the inner side of the body; And a metal layer in contact with the coating layer and having a second thickness by depositing a metallic reflective material.
  • a semiconductor light emitting element wherein the first thickness of the coating layer is thicker than the second thickness of the metal layer.
  • a semiconductor light emitting element having a first thickness of about 10 ⁇ m or less.
  • a semiconductor light emitting element in which the first surface of the coating layer in contact with the plating layer is an uneven surface and the second surface of the coating layer in contact with the metal layer is a flat surface.
  • a semiconductor light emitting device in which the metal layer in contact with the second surface of the coating layer has a flat surface as a whole.
  • a semiconductor light emitting device wherein the coating layer is made of the same material as the body.
  • the body includes a first surface connected to the lower surface of the body, a second surface connected to the first surface, and a third surface connected to the second surface, wherein the width of the opening of the second surface of the body is the width of the opening of the lower surface of the body.
  • a semiconductor light emitting element that is larger and smaller than the width of the opening in the upper surface of the body.
  • a semiconductor light emitting element having inclined surfaces inclined toward an inner side of an opening for accommodating a semiconductor light emitting element chip.
  • a semiconductor light emitting element wherein the reflective layer is formed on at least one of the first to third surfaces of the body.
  • a semiconductor light emitting device comprising: a body including a bottom portion having a plurality of holes formed in a longitudinal direction; A semiconductor light emitting device chip accommodated in each of the bottom hole formed on both sides of the body; A plurality of semiconductor layers including an active layer for generating light by recombination of electrons and holes and electrodes electrically connected to the plurality of semiconductor layers A semiconductor light emitting device chip; A reinforcing member formed in a hole in the bottom portion positioned between the semiconductor light emitting device chips; And an encapsulant filled in the body to fix the semiconductor light emitting device chip and the reinforcing material.
  • a semiconductor light emitting device comprising a; reflective material filled in a hole in which a reinforcing material is formed.
  • a semiconductor light emitting device comprising a; metal reflective layer positioned between the reinforcing material and the encapsulating material.
  • the height of the reinforcing material is a semiconductor light emitting element smaller than the height of the bottom portion.
  • a semiconductor light emitting device comprising: bottom portions disposed between semiconductor light emitting devices chips, and a plurality of holes spaced apart from each other, and reinforcing materials are respectively formed in the plurality of holes spaced apart from each other.
  • a semiconductor light emitting device comprising: a functional element that is a protective device formed in at least one hole of a plurality of holes spaced apart from each other, the bottom portion located between the semiconductor light emitting device chip.
  • the reinforcing material is a semiconductor light emitting element formed in the remaining hole in which the functional element is not formed.
  • a semiconductor light emitting device in which the bottom surface of the reinforcing material is exposed in the bottom direction of the bottom portion.
  • a semiconductor light emitting element wherein the bottom surface of the reinforcing material is located away from the electrodes of the semiconductor light emitting element chip exposed in the bottom direction of the bottom portion.
  • a semiconductor light emitting device comprising a reflective layer; an inner surface of a bottom portion accommodating a semiconductor light emitting device chip.
  • a body comprising a sidewall; wherein the sidewall includes at least one or more open sections, and at least one or more open sections are positioned facing each other.
  • a semiconductor light emitting element in which the width of the upper opening of the body is larger than the width of the semiconductor light emitting element chip.
  • a method of manufacturing a semiconductor light emitting device comprising the steps of: arranging a body having a bottom portion in which a plurality of holes having different widths are formed in a longitudinal direction on a base; Disposing a semiconductor light emitting device chip in each of the first holes of the bottom part formed at both sides in the longitudinal direction; Disposing a reinforcing material in a second hole of a bottom portion where the semiconductor light emitting device chip is not disposed; And inserting an encapsulant into the body.
  • the present disclosure it is possible to obtain a semiconductor light emitting device that increases reflectance while maintaining electrical contact force between the semiconductor light emitting device chip and the lead frame in order to improve light extraction efficiency.
  • a semiconductor light emitting device capable of maintaining electrical contact between the substrate and the semiconductor light emitting device chip while increasing the reflectance can be obtained.
  • the reflective layer is formed as a flat surface, the reflectance may be increased to improve light extraction efficiency.
  • the reflective layer is formed thin, peeling or a decrease in bonding strength can be suppressed or prevented.
  • the semiconductor light emitting device formed in the long direction by forming a reinforcing material between the semiconductor light emitting device chips, it is possible to prevent the phenomenon caused by the bending and the bending of the semiconductor light emitting device while maintaining the bonding force with the external substrate.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

La présente invention concerne un dispositif électroluminescent à semi-conducteur comprenant : un substrat comprenant une première partie conductrice, une seconde partie conductrice, et une partie isolante interposée entre la première partie conductrice et la seconde partie conductrice ; un corps disposé sur le substrat, comprenant une partie inférieure, et comportant un trou formé dans la partie inférieure ; une puce de dispositif électroluminescent à semi-conducteur disposée sur le substrat, exposée à travers le trou, électriquement reliée au substrat, et comprenant une pluralité de couches semi-conductrices servant à générer des rayons ultraviolets par une recombinaison d'électrons et de trous, et une électrode électriquement reliée à la pluralité de couches semi-conductrices ; et une couche réfléchissante formée sur au moins une partie de la surface interne du corps.
PCT/KR2017/011607 2016-10-21 2017-10-19 Dispositif électroluminescent à semi-conducteur WO2018074866A2 (fr)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
KR10-2016-0137618 2016-10-21
KR10-2016-0137624 2016-10-21
KR1020160137618A KR20180044039A (ko) 2016-10-21 2016-10-21 반도체 발광소자
KR1020160137624A KR20180044470A (ko) 2016-10-21 2016-10-21 반도체 발광소자
KR1020160137620A KR102017734B1 (ko) 2016-10-21 2016-10-21 반도체 발광소자
KR10-2016-0137620 2016-10-21
KR1020160146893A KR101877236B1 (ko) 2016-11-04 2016-11-04 반도체 발광소자 및 이의 제조방법
KR10-2016-0146893 2016-11-04
KR10-2016-0148754 2016-11-09
KR1020160148754A KR101863545B1 (ko) 2016-11-09 2016-11-09 반도체 발광소자

Publications (2)

Publication Number Publication Date
WO2018074866A2 true WO2018074866A2 (fr) 2018-04-26
WO2018074866A3 WO2018074866A3 (fr) 2018-08-09

Family

ID=62019710

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2017/011607 WO2018074866A2 (fr) 2016-10-21 2017-10-19 Dispositif électroluminescent à semi-conducteur

Country Status (1)

Country Link
WO (1) WO2018074866A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI720806B (zh) * 2020-02-03 2021-03-01 友達光電股份有限公司 發光二極體顯示器

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4353043B2 (ja) * 2004-09-27 2009-10-28 パナソニック電工株式会社 半導体発光装置
KR20080041818A (ko) * 2006-11-08 2008-05-14 엘지전자 주식회사 렌즈 및 이를 포함하는 발광 소자 패키지
KR20090032775A (ko) * 2007-09-28 2009-04-01 삼성전기주식회사 발광다이오드 패키지
KR101526567B1 (ko) * 2008-05-07 2015-06-10 엘지이노텍 주식회사 발광 다이오드 패키지
KR101064090B1 (ko) * 2009-11-17 2011-09-08 엘지이노텍 주식회사 발광소자 패키지

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI720806B (zh) * 2020-02-03 2021-03-01 友達光電股份有限公司 發光二極體顯示器

Also Published As

Publication number Publication date
WO2018074866A3 (fr) 2018-08-09

Similar Documents

Publication Publication Date Title
WO2013133594A1 (fr) Dispositif électroluminescent et procédé de fabrication associé
WO2019112304A1 (fr) Dispositif électroluminescent avec empilement de del pour dispositif d'affichage et appareil d'affichage le comprenant
WO2019117656A1 (fr) Structure empilée électroluminescente et dispositif d'affichage la comprenant
WO2016129873A2 (fr) Élément électroluminescent et diode électroluminescente
WO2019135606A1 (fr) Dispositif électroluminescent avec empilement de del pour afficheur et appareil d'affichage le comprenant
WO2019240538A1 (fr) Carte de circuit imprimé et dispositif caméra comprenant cette dernière
WO2019054547A1 (fr) Boîtier de dispositif électroluminescent et appareil d'éclairage le comprenant
WO2019004518A1 (fr) Boîtier de dispositif électroluminescent et appareil source de lumière
WO2016099061A1 (fr) Dispositif électroluminescent à semi-conducteurs et procédé de fabrication correspondant
WO2015190817A1 (fr) Élément électroluminescent à semi-conducteur
WO2018164371A1 (fr) Dispositif à semi-conducteur et boîtier de dispositif à semi-conducteur
WO2016047950A1 (fr) Dispositif électroluminescent et son procédé de fabrication
WO2020242098A1 (fr) Procédé de fabrication d'un dispositif d'affichage à micro-del, et dispositif d'affichage à micro-del l'utilisant
WO2017122918A1 (fr) Substrat de transistor à couches minces, et panneau d'affichage et dispositif d'affichage comprenant celui-ci
WO2018139877A1 (fr) Dispositif à semiconducteur
WO2018139770A1 (fr) Dispositif à semi-conducteur et boîtier de dispositif à semi-conducteur
WO2019045166A1 (fr) Boîtier de dispositif électroluminescent
WO2019045513A1 (fr) Boîtier d'élément électroluminescent et dispositif d'éclairage le comprenant
WO2016144103A1 (fr) Module émetteur de lumière et dispositif d'éclairage le comportant
WO2019054548A1 (fr) Boîtier de dispositif électroluminescent
WO2018110981A1 (fr) Module de transmission optique
WO2018074866A2 (fr) Dispositif électroluminescent à semi-conducteur
WO2019054793A1 (fr) Boîtier de dispositif électroluminescent
WO2019216596A1 (fr) Boîtier laser à émission par la surface
WO2011013966A2 (fr) Procédé de fabrication d'un substrat de dissipation de chaleur destiné à une del, et structure de ce substrat

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17861893

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase in:

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 17861893

Country of ref document: EP

Kind code of ref document: A2