WO2018061236A1 - Dispositif photoémetteur - Google Patents

Dispositif photoémetteur Download PDF

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Publication number
WO2018061236A1
WO2018061236A1 PCT/JP2017/003848 JP2017003848W WO2018061236A1 WO 2018061236 A1 WO2018061236 A1 WO 2018061236A1 JP 2017003848 W JP2017003848 W JP 2017003848W WO 2018061236 A1 WO2018061236 A1 WO 2018061236A1
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WO
WIPO (PCT)
Prior art keywords
light emitting
layer
emitting device
light
intermediate layer
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PCT/JP2017/003848
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English (en)
Japanese (ja)
Inventor
二郎 藤森
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パイオニア株式会社
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Publication of WO2018061236A1 publication Critical patent/WO2018061236A1/fr

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/04—Sealing arrangements, e.g. against humidity
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers

Definitions

  • the present invention relates to a light emitting device.
  • OLEDs organic light emitting diodes
  • the OLED has an organic layer that emits light by organic electroluminescence.
  • organic layer is easily deteriorated by, for example, water or oxygen.
  • the sealing part for sealing a light emission part (namely, organic layer) may be provided.
  • Patent Document 1 describes an example of an OLED sealing portion.
  • a first coating film AlO x film
  • an intermediate film SiN film
  • CVD Chemical Vapor Deposition
  • AlO x film a second coating film
  • the sealing part of patent document 1 contains the laminated structure of a 1st coating film, an intermediate film, and a 2nd coating film.
  • Patent Document 2 describes an example of an OLED sealing portion.
  • a first barrier film for example, aluminum oxide
  • an organic film is formed by CVD
  • a second barrier film for example, silicon nitride
  • the second barrier film may be formed by ALD.
  • the second barrier film includes, for example, aluminum oxide.
  • the sealing part of patent document 2 contains the laminated structure of a 1st barrier film
  • Patent Document 3 describes an example of an OLED sealing portion. This sealing part has the sealing thin film which has translucency. The sealing thin film has a first film, and the first film contains silicon oxide or silicon oxynitride. Patent Document 3 describes that polysilazane may be applied on the first film in order to block water.
  • the organic layer in the OLED may include a plurality of layers.
  • the organic layer described in Patent Document 4 includes a first layer made of ⁇ -NPD and a second layer made of Alq 3 .
  • the first layer is located on the anode side, and the second layer is located on the cathode side.
  • Patent Document 4 describes that the ductility of the first layer (layer made of ⁇ -NPD) is low and the ductility of the second layer (layer made of Alq 3 ) is high.
  • the light emitting part may be covered with a coating layer formed by ALD.
  • the coating layer may contact the organic layer of the light emitting part.
  • An example of a problem to be solved by the present invention is to prevent the coating layer from being broken by the organic layer of the light emitting portion when the light emitting portion is covered with a coating layer formed by ALD.
  • the invention described in claim 1 A plurality of light-emitting portions each having a laminated structure including a first electrode, an organic layer, and a second electrode, located on the first surface side of the substrate; A plurality of translucent parts; The middle layer, A first coating layer containing an insulating inorganic material; With Each of the plurality of light emitting portions is located between the light transmitting portions adjacent to each other, The intermediate layer is a light emitting device having a first surface in contact with the organic layer at the light transmitting portion and a second surface in contact with the first coating layer on the opposite side of the first surface.
  • FIG. 2 is a cross-sectional view taken along the line AA in FIG. It is a figure for demonstrating an example of the edge part of the sealing part shown in FIG. 4, and its periphery. It is a figure which shows the 1st modification of FIG. It is a figure which shows the 2nd modification of FIG. It is a figure which shows the 3rd modification of FIG. It is a figure which shows the 4th modification of FIG. It is a figure which shows the 5th modification of FIG. FIG.
  • FIG. 11 is a cross-sectional view showing a light emitting device according to modification example 1; It is a figure which shows the modification of FIG.
  • FIG. 11 is a cross-sectional view showing a light emitting device according to Modification 2.
  • 12 is a cross-sectional view showing a light emitting device according to Modification 3.
  • FIG. 1 is a plan view showing a light emitting device 10 according to the embodiment.
  • FIG. 2 is a diagram in which the second electrode 130 is removed from FIG. 1.
  • FIG. 3 is a diagram in which the insulating layer 140 is removed from FIG. 4 is a cross-sectional view taken along the line AA in FIG.
  • the organic layer 120 (FIG. 4) and the sealing portion 200 (FIG. 4) are not shown in FIGS.
  • the light emitting device 10 includes a plurality of light emitting units 152, a plurality of light transmitting units 154, an intermediate layer 210, and a coating layer 220.
  • the plurality of light emitting units 152 are located on the first surface 102 side of the substrate 100.
  • Each of the light emitting units 152 has a stacked structure of the first electrode 110, the organic layer 120, and the second electrode 130.
  • the organic layer 120 includes a light emitting layer.
  • Each of the plurality of light emitting units 152 is located between the light transmitting units 154 adjacent to each other. In other words, the plurality of light emitting units 152 and the plurality of light transmitting units 154 are alternately arranged.
  • the covering layer 220 is a layer formed by ALD (Atomic Layer Deposition), and includes an insulating inorganic material.
  • the intermediate layer 210 has a surface that faces the first surface 102 side of the substrate 100 and contacts the organic layer 120 at the light transmitting portion 154, that is, a first surface.
  • the intermediate layer 210 has a surface opposite to the first surface of the intermediate layer 210 and in contact with the covering layer 220, that is, a second surface.
  • the first surface of the intermediate layer 210 is the lower surface of the intermediate layer 210.
  • the second surface of the intermediate layer 210 is the upper surface of the intermediate layer 210.
  • the ductility of the material of the intermediate layer 210 is high.
  • the organic layer 120 includes a plurality of layers.
  • the organic layer 120 includes a layer in contact with the intermediate layer 210, that is, a first partial layer (in the above example, the first partial layer serves as an electron injection layer).
  • the ductility of the material of the intermediate layer 210 is higher than the ductility of the material of the first partial layer of the organic layer 120 and the ductility of the material of the coating layer 220.
  • the intermediate layer 210 extends over the plurality of light emitting portions 152 and the plurality of light transmitting portions 154. In other words, the intermediate layer 210 covers the plurality of light emitting units 152 and covers the first surface 102 of the substrate 100 between the light emitting units 152 adjacent to each other.
  • the intermediate layer 210 When the intermediate layer 210 is located between the organic layer 120 and the coating layer 220, it is possible to prevent the coating layer 220 from cracking with high reliability. Specifically, as a result of investigation by the present inventor, it was found that when the coating layer 220 is formed on the organic layer 120 without providing the intermediate layer 210, the coating layer 220 may break. As a result of investigation by the present inventor, it has been clarified that the crack of the coating layer 220 may be caused by the difference between the linear expansion coefficient of the organic layer 120 and the linear expansion coefficient of the coating layer 220.
  • the coating layer is heated by heating during the manufacturing process of the light emitting device 10. Stress is generated at 220.
  • the crack of the covering layer 220 may be caused by this stress.
  • the intermediate layer 210 is located between the organic layer 120 and the coating layer 220. For this reason, even when the difference between the linear expansion coefficient of the organic layer 120 (particularly, the first partial layer of the organic layer 120) and the linear expansion coefficient of the covering layer 220 is large, the intermediate layer 210 exerts stress on the covering layer 220. Can be relaxed. In this way, it is possible to prevent the covering layer 220 from cracking with high reliability.
  • the ductility of the material of the intermediate layer 210 is high. Specifically, when the ductility of the material of the first partial layer of the organic layer 120 and the ductility of the material of the coating layer 220 are higher, it is more reliable that the coating layer 220 is cracked. Can be prevented. Specifically, when the material of the intermediate layer 210 has high ductility, the intermediate layer 210 can be flexibly deformed. For this reason, even if the difference between the linear expansion coefficient of the organic layer 120 (particularly, the first partial layer of the organic layer 120) and the linear expansion coefficient of the covering layer 220 is large, the intermediate layer 210 has a stress of the covering layer 220. It can be deformed to relax. In this way, it is possible to prevent the coating layer 220 from cracking with higher reliability.
  • the covering layer 220 can be prevented from being cracked with high reliability. Specifically, when the intermediate layer 210 extends over the plurality of light emitting portions 152 and the plurality of light transmitting portions 154, the covering layer 220 is in contact with the intermediate layer 210 in any region. In this case, the linear expansion coefficient of the region under the covering layer 220 (that is, the intermediate layer 210) is constant over the plurality of light emitting units 152 and the plurality of light transmitting units 154.
  • the light emitting device 10 includes a substrate 100, a plurality of first electrodes 110, a plurality of first connection portions 112, a plurality of first terminals 114, a first wiring 116, a plurality of second electrodes 130, a plurality of second connection portions 132, A plurality of second terminals 134, a second wiring 136, and a plurality of insulating layers 140 are provided.
  • the shape of the substrate 100 is a rectangle having a pair of long sides and a pair of short sides when viewed from a direction perpendicular to the first surface 102.
  • the shape of the substrate 100 is not limited to the example shown in this figure.
  • the shape of the substrate 100 may be, for example, a circle or a polygon other than a rectangle when viewed from a direction perpendicular to the first surface 102.
  • the plurality of first electrodes 110 are spaced apart from each other, and are specifically arranged in a line along the long side of the substrate 100. Each of the plurality of first electrodes 110 extends along the short side of the substrate 100.
  • Each of the plurality of first electrodes 110 is connected to each of the plurality of first terminals 114 via each of the plurality of first connection portions 112.
  • the plurality of first terminals 114 are connected to each other by the first wiring 116.
  • the first wiring 116 extends along one of the pair of long sides of the substrate 100.
  • An external voltage is supplied to the first electrode 110 via the first wiring 116, the first terminal 114, and the first connection portion 112.
  • the first electrode 110, the first connection portion 112, and the first terminal 114 are integrated with each other.
  • the light emitting device 10 includes a conductive layer having a region functioning as the first electrode 110, a region functioning as the first connection portion 112, and a region functioning as the first terminal 114.
  • Each of the plurality of second electrodes 130 overlaps each of the plurality of first electrodes 110.
  • the plurality of second electrodes 130 are spaced apart from each other, specifically, aligned in a line along the long side of the substrate 100.
  • Each of the plurality of second electrodes 130 extends along the short side of the substrate 100, specifically, along a pair of long sides extending along the short side of the substrate 100 and a long side of the substrate 100. And a pair of short sides extending.
  • Each of the plurality of second electrodes 130 is connected to each of the plurality of second terminals 134 via each of the plurality of second connection portions 132.
  • the plurality of second terminals 134 are connected to each other by the second wiring 136.
  • the second wiring 136 is opposed to the first wiring 116 across the plurality of first electrodes 110 and the plurality of second electrodes 130, and extends along the other of the pair of long sides of the substrate 100.
  • An external voltage is supplied to the second electrode 130 via the second wiring 136, the second terminal 134, and the second connection part 132.
  • the second connection portion 132 and the second terminal 134 are integrated with each other.
  • the light emitting device 10 includes a conductive layer having a region functioning as the second connection portion 132 and a region functioning as the second terminal 134.
  • Each of the plurality of insulating layers 140 overlaps each of the plurality of first electrodes 110.
  • the plurality of insulating layers 140 are spaced apart from each other, and specifically are arranged in a line along the long side of the substrate 100.
  • Each of the plurality of insulating layers 140 extends along the short side of the substrate 100, specifically, along the pair of long sides extending along the short side of the substrate 100 and the long side of the substrate 100. It has a pair of short sides that extend.
  • Each of the plurality of insulating layers 140 has an opening 142.
  • the first electrode 110, the organic layer 120, and the second electrode 130 are regions that function as the light emitting unit 152 (the first electrode 110, the organic layer 120, and the second electrode 130 laminated structures).
  • the insulating layer 140 defines the light emitting portion 152.
  • the light emitting unit 152 extends along the short side of the substrate 100, specifically, along a pair of long sides extending along the short side of the substrate 100 and a long side of the substrate 100. It has a pair of short sides that extend.
  • the light emitting device 10 includes a substrate 100, a first electrode 110, an organic layer 120, a second electrode 130, an insulating layer 140, and a sealing unit 200.
  • the substrate 100 has a first surface 102 and a second surface 104.
  • the second surface 104 is on the opposite side of the first surface 102.
  • the first electrode 110, the organic layer 120, the second electrode 130, and the insulating layer 140 are on the first surface 102 of the substrate 100.
  • the first electrode 110 functions as an anode
  • the second electrode 130 functions as a cathode.
  • the first electrode 110, the organic layer 120, and the second electrode 130 have a region that functions as the light emitting unit 152. In this region, the first electrode 110, the organic layer 120, and The second electrodes 130 overlap each other.
  • the sealing unit 200 includes an intermediate layer 210 and a covering layer 220.
  • the substrate 100 has translucency.
  • the substrate 100 includes glass.
  • the substrate 100 may include a resin.
  • the first electrode 110 has translucency and conductivity.
  • the first electrode 110 includes a material having translucency and conductivity.
  • a metal oxide for example, ITO (Indium Tin Oxide) and IZO (Indium Zinc Oxide) are used. Contains at least one. Accordingly, light from the organic layer 120 can pass through the first electrode 110.
  • the organic layer 120 includes, for example, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer.
  • the hole injection layer and the hole transport layer are connected to the first electrode 110.
  • the electron transport layer and the electron injection layer are connected to the second electrode 130.
  • the light emitting layer emits light by a voltage between the first electrode 110 and the second electrode 130.
  • the organic layer 120 extends over the plurality of light emitting portions 152 and the plurality of light transmitting portions 154. For this reason, the organic layer 120 is common among the plurality of light emitting units 152. Further, the first surface 102 of the substrate 100 is covered with the organic layer 120 between the light emitting units 152 adjacent to each other.
  • the second electrode 130 has light reflectivity and conductivity.
  • the second electrode 130 includes a material having light reflectivity and conductivity, and includes, for example, a metal, specifically, for example, at least one of Al, Ag, and MgAg.
  • the light emitting device 10 is bottom emission, and most of the light from the organic layer 120 is emitted from the second surface 104 side.
  • the second electrode 130 has a light shielding property. For this reason, in the example shown to this figure, it is suppressed that the light from the organic layer 120 leaks from the 2nd electrode 130.
  • the insulating layer 140 has translucency.
  • the insulating layer 140 includes an organic insulating material, specifically, for example, polyimide.
  • the insulating layer 140 may include an inorganic insulating material, specifically, for example, silicon oxide (SiO x ), silicon oxynitride (SiON), or silicon nitride (SiN x ).
  • the intermediate layer 210 is provided to relieve the stress of the coating layer 220.
  • the intermediate layer 210 is an organic layer, more specifically a resin layer.
  • the intermediate layer 210 preferably has high ductility.
  • the hard vinyl chloride resin, AS resin, glass fiber reinforced thermoplastic resin (for example, polycarbonate resin or styrene resin), glass fiber reinforced polyester resin Contains at least one selected from the group consisting of soft vinyl chloride resin, low density polyethylene, ABS resin, fluororesin, polypropylene, high density polyethylene, high impact polystyrene, acetal resin, polyamide resin, polycarbonate and cellulose acetate .
  • the intermediate layer 210 has electrical insulation. For this reason, the plurality of second electrodes 130 are not connected to each other through the intermediate layer 210. Specifically, in the example shown in the drawing, the intermediate layer 210 is in contact with the plurality of intermediate layers 210. Even in such a case, the plurality of second electrodes 130 are not connected to each other through the intermediate layer 210.
  • the intermediate layer 210 has translucency. For this reason, the light transmittance of the light emitting device 10 can be increased. Specifically, in the example shown in this drawing, a part of the intermediate layer 210 is located in the light transmitting portion 154. Even in such a case, the light transmittance of the light emitting device 10 can be increased.
  • the intermediate layer 210 flattens the unevenness generated on the first surface 102 of the substrate 100 due to the presence of the plurality of light emitting portions 152.
  • the second surface (upper surface) of the intermediate layer 210 is located at a height h1 (first height) from the first surface 102 of the substrate 100 in a region overlapping with the light emitting unit 152, and thus the light transmitting portion.
  • the height h2 (second height) is located from the first surface 102 of the substrate 100.
  • the upper end of the light emitting unit 152 (the upper end of the second electrode 130) is located at a height h3 (third height) from the first surface 102 of the substrate 100.
  • the absolute value of the difference between the height h1 and the height h2 is smaller than the height h3. In this way, the intermediate layer 210 flattens the unevenness generated on the first surface 102 of the substrate 100 due to the presence of the plurality of light emitting portions 152.
  • the height h2 of the intermediate layer 210 is not less than 1.5 times the height h3 of the light emitting portion 152 and not more than 300 times the height h3 of the light emitting portion 152.
  • the above-described height h2 of the intermediate layer 210 is preferably high to some extent, and as described above, 1.5 times or more, preferably high, of the height h3. It is more than 5 times the length h3.
  • the height h2 of the intermediate layer 210 is preferably low to some extent, and as described above, not more than 300 times the height h3, preferably high. It is 100 times or less of h3.
  • the thickness of the intermediate layer 210 is 1 nm or more in one example. From the viewpoint of relieving the stress of the covering layer 220, the thickness of the intermediate layer 210 in the light transmitting portion 154 is preferably somewhat thick, and as described above, it is 1 nm or more, preferably 5 ⁇ m or more. Note that when the intermediate layer 210 is a resin layer, the intermediate layer 210 has a certain degree of translucency. For this reason, when the intermediate layer 210 is a resin layer, the intermediate layer 210 has high translucency even if the thickness of the intermediate layer 210 is, for example, 300 ⁇ m or more.
  • the covering layer 220 is provided to prevent a substance (for example, water or oxygen) that degrades the light emitting unit 152 from entering the light emitting unit 152, particularly the organic layer 120.
  • the covering layer 220 is a layer formed by ALD and includes an insulating inorganic material.
  • the coating layer 220 is an oxide, specifically, aluminum oxide (Al 2 O 3 ), hafnium oxide (HfO 2 ), hafnium silicate (HfSiO), lanthanum oxide (La 2 O 3 ), It includes at least one selected from the group consisting of silicon oxide (SiO 2 ), strontium titanate (STO), tantalum oxide (Ta 2 O 5 ), titanium oxide (TiO 2 ), and zinc oxide (ZnO).
  • Al 2 O 3 aluminum oxide
  • HfO 2 hafnium oxide
  • HfSiO hafnium silicate
  • La 2 O 3 lanthanum oxide
  • It includes at least one selected from the group consisting of silicon oxide (SiO 2 ), strontium titanate (STO), tantalum oxide (Ta 2 O 5 ), titanium oxide (TiO 2 ), and zinc oxide (ZnO).
  • the covering layer 220 is made of nitride, specifically, aluminum nitride (AlN), hafnium nitride (HfN), silicon nitride (SiN x ), tantalum nitride (TaN), and titanium nitride (TiN). Including at least one selected from the group.
  • the thickness of the coating layer 220 is 10 nm or more and 300 nm or less in one example. From the viewpoint of sealing the light emitting unit 152 with high reliability, the thickness of the covering layer 220 is preferably thick to some extent, and is 10 nm or more, preferably 40 nm or more as described above. On the other hand, from the viewpoint of reducing the stress of the coating layer 220 and shortening the time required for the deposition of the coating layer 220, the thickness of the coating layer 220 is preferably thin to some extent, and is 300 nm or less as described above. The thickness is preferably 100 nm or less.
  • the second electrode 130 has an end portion 130a and an end portion 130b
  • the insulating layer 140 has an end portion 140a and an end portion 140b.
  • the end part 130a and the end part 140a face the same direction.
  • the end portion 130b and the end portion 140b face the same direction, and are on the opposite sides of the end portion 130a and the end portion 140a, respectively.
  • the first surface 102 of the substrate 100 has a plurality of regions 102a, a plurality of regions 102b, and a plurality of regions 102c.
  • Each of the plurality of regions 102a extends from a position overlapping with the end portion 130a of the second electrode 130 to overlap with the end portion 130b.
  • Each of the plurality of regions 102b extends from a position overlapping the end portion 130a of the second electrode 130 to a position overlapping the end portion 140a of the insulating layer 140 (or from a position overlapping the end portion 130b of the second electrode 130 to the end of the insulating layer 140. (Up to a position overlapping the portion 140b).
  • Each of the plurality of regions 102c extends from a position overlapping one end 140a of one insulating layer 140 of two adjacent insulating layers 140 to a position overlapping the end 140b of the other insulating layer 140.
  • the region 102a overlaps with the second electrode 130, and thus the light emitting device 10 has the lowest light transmittance in the region overlapping with the region 102a among the regions overlapping with the region 102a, the region 102b, and the region 102c. ing.
  • the region 102c does not overlap with any of the second electrode 130 and the insulating layer 140. Therefore, the light-emitting device 10 is the most overlapping region with the region 102c among the regions 102a, 102b, and 102c. High light transmittance.
  • the region 102b does not overlap with the second electrode 130 but overlaps the insulating layer 140.
  • the light emitting device 10 has higher light transmittance in the region overlapping with the region 102a, and The light transmittance is lower than the light transmittance in a region overlapping with the region 102c.
  • the light transmittance of the light emitting device 10 as a whole is high.
  • the width of the region having a high light transmittance that is, the width d3 of the region 102c is widened.
  • the width d3 of the region 102c is the width d2 of the region 102b. (D3> d2). In this way, the light transmittance of the light emitting device 10 as a whole is high.
  • the light emitting device 10 is prevented from absorbing a large amount of light having a specific wavelength.
  • the width of the region where light is transmitted through the insulating layer 140 that is, the width d2 of the region 102b is narrowed.
  • the width d2 of the region 102b is the region 102c. Is smaller than the width d3 (d2 ⁇ d3).
  • the insulating layer 140 may absorb light having a specific wavelength. Even in such a case, the amount of light transmitted through the insulating layer 140 is small in the example shown in FIG. In this way, the light emitting device 10 is prevented from absorbing much light of a specific wavelength.
  • the ratio d2 / d1 of the width d2 of the region 102b to the width d1 of the region 102a is 0 or more and 0.2 or less (0 ⁇ d2 / d1 ⁇ 0.2), and the ratio of the region 102c to the width d1 of the region 102a is
  • the ratio d3 / d1 of the width d3 is not less than 0.3 and not more than 2 (0.3 ⁇ d3 / d1 ⁇ 2).
  • the width d1 of the region 102a is 50 ⁇ m or more and 500 ⁇ m or less
  • the width d2 of the region 102b is 0 ⁇ m or more and 100 ⁇ m or less
  • the width d3 of the region 102c is 15 ⁇ m or more and 1000 ⁇ m or less.
  • the light emitting device 10 functions as a transflective OLED. Specifically, a region that does not overlap with the second electrode 130 functions as the light transmitting portion 154. In this way, in the light emitting device 10, the plurality of light emitting units 152 and the plurality of light transmitting units 154 are alternately arranged. When light is not emitted from the plurality of light emitting units 152, an object on the first surface 102 side can be seen through from the second surface 104 side, and an object on the second surface 104 side is visible on the first surface 102 side. See through. Furthermore, light from the plurality of light emitting units 152 is mainly output from the second surface 104 side, and is hardly output from the first surface 102 side. When light is emitted from the plurality of light emitting units 152, an object on the second surface 104 side can be seen through from the first surface 102 side in human vision.
  • the light emitting device 10 can be used as a high-mount stop lamp of an automobile.
  • the light emitting device 10 can be attached to the rear window of the automobile. Further, in this case, the light emitting device 10 emits red light, for example.
  • FIG. 5 is a view for explaining an example of the end portion E of the sealing portion 200 shown in FIG. 4 and its surroundings.
  • the intermediate layer 210 extends outward from the organic layer 120 and covers the end of the organic layer 120. In this way, the intermediate layer 210 is in contact with the first surface 102 of the substrate 100 outside the edge of the organic layer 120. In other words, the end portion of the organic layer 120 is not exposed from the intermediate layer 210.
  • the covering layer 220 extends outward from the intermediate layer 210 and covers the end of the intermediate layer 210. Thus, the covering layer 220 is in contact with the first surface 102 of the substrate 100 outside the end of the intermediate layer 210. In other words, the end portion of the intermediate layer 210 is not exposed from the end portion E of the sealing portion 200.
  • the end portion of the organic layer 120 When the end portion of the organic layer 120 is not exposed from the intermediate layer 210, it is possible to prevent the coating layer 220 from cracking with high reliability. Specifically, when the end portion of the organic layer 120 is not exposed from the intermediate layer 210, the end portion of the organic layer 120 can be prevented from coming into contact with the coating layer 220. In this case, even if the difference between the linear expansion coefficient at the end of the organic layer 120 and the linear expansion coefficient of the coating layer 220 is large, it is possible to prevent stress from being generated in the coating layer 220. In this way, it is possible to prevent the covering layer 220 from cracking with high reliability.
  • the coating layer 220 is a layer formed by ALD, and therefore, high sealing performance is ensured.
  • the intermediate layer 210 is an organic layer, the intermediate layer 210 easily transmits a substance that degrades the light emitting unit 152. In the example shown in the drawing, the end of the intermediate layer 210 is not exposed from the end E of the sealing portion 200 and is covered with the coating layer 220. For this reason, it can prevent with high reliability that the substance which degrades the light emission part 152 permeates into the light emission part 152 from the edge part E of the sealing part 200.
  • the first electrode 110, the first connection part 112, the first terminal 114, the second connection part 132, and the second terminal 134 are formed on the first surface 102 of the substrate 100.
  • the first electrode 110, the first connection part 112, the first terminal 114, the second connection part 132, and the second terminal 134 are formed by patterning a conductive layer formed by sputtering.
  • the insulating layer 140 is formed.
  • the insulating layer 140 is formed by patterning a photosensitive resin applied on the first surface 102 of the substrate 100.
  • the organic layer 120 is formed.
  • the organic layer 120 is formed by vapor deposition.
  • the organic layer 120 may be formed by application. In this case, the material of the organic layer 120 is applied in the opening 142 of the insulating layer 140.
  • the second electrode 130 is formed. In one example, the second electrode 130 is formed by vacuum deposition using a mask.
  • the intermediate layer 210 is formed.
  • the intermediate layer 210 is formed by CVD (Chemical Vapor Deposition).
  • the coating layer 220 is formed by ALD.
  • the light emitting device 10 shown in FIGS. 1 to 5 is manufactured.
  • FIG. 6 is a diagram showing a first modification of FIG.
  • the second surface (upper surface) of the intermediate layer 210 is substantially flat across the plurality of light emitting portions 152 and the plurality of light transmitting portions 154. It is substantially parallel to the first surface 102. More specifically, in the example shown in the figure, the above-described height h1 of the intermediate layer 210 is substantially equal to the above-described height h2 of the intermediate layer 210, and in one example, the above-described height h2 of the intermediate layer 210. 1.0 times to 1.1 times (1.0 ⁇ h1 / h2 ⁇ 1.1).
  • the covering layer 220 is highly likely to crack. It can be prevented with reliability. Specifically, when the second surface (upper surface) of the intermediate layer 210 is substantially parallel to the first surface 102 of the substrate 100 across the plurality of light emitting portions 152 and the plurality of light transmitting portions 154, the intermediate layer 210. And the covering layer 220 are flat across the plurality of light emitting portions 152 and the plurality of light transmitting portions 154.
  • FIG. 7 is a diagram showing a second modification of FIG.
  • a plurality of organic layers 120 may be arranged on the first surface 102 of the substrate 100.
  • the organic layer 120 does not spread over the plurality of light emitting portions 152 and the plurality of light transmitting portions 154.
  • the first surface 102 of the substrate 100 has a region exposed from the organic layer 120 between the light emitting units 152 adjacent to each other.
  • the organic layer 120 extends outward from the second electrode 130.
  • the intermediate layer 210 is located between the organic layer 120 and the coating layer 220. For this reason, it is possible to prevent the covering layer 220 from cracking with high reliability.
  • FIG. 8 is a diagram showing a third modification of FIG.
  • the first electrode 110 may extend over the plurality of light emitting portions 152 and the plurality of light transmitting portions 154.
  • the first electrode 110 is common among the plurality of light emitting units 152.
  • the first surface 102 of the substrate 100 is covered with the first electrode 110 between the light emitting units 152 adjacent to each other.
  • the intermediate layer 210 is located between the organic layer 120 and the coating layer 220. For this reason, it is possible to prevent the covering layer 220 from cracking with high reliability.
  • FIG. 9 is a diagram showing a fourth modification of FIG.
  • the light emitting device 10 does not have to include the insulating layer 140 (FIG. 4).
  • the plurality of first electrodes 110 and the plurality of second electrodes 130 are arranged on the first surface 102 of the substrate 100 in the same manner as the example shown in FIG.
  • the organic layer 120 extends over the plurality of light emitting units 152 and the plurality of light transmitting units 154 in the same manner as the example shown in FIG.
  • the organic layer 120 covers the end of the first electrode 110. For this reason, it is prevented that the 2nd electrode 130 contacts the 1st electrode 110, ie, the 2nd electrode 130 is short-circuited with the 1st electrode 110.
  • the intermediate layer 210 is located between the organic layer 120 and the coating layer 220. For this reason, it is possible to prevent the covering layer 220 from cracking with high reliability.
  • FIG. 10 is a diagram showing a fifth modification of FIG.
  • the light emitting device 10 shown in this figure is the same as the light emitting device 10 shown in FIG. 9 except that each of the plurality of organic layers 120 overlaps each of the plurality of first electrodes 110.
  • the organic layer 120 does not spread over the plurality of light emitting portions 152 and the plurality of light transmitting portions 154.
  • the first surface 102 of the substrate 100 has a region exposed from the organic layer 120 between the light emitting units 152 adjacent to each other.
  • the organic layer 120 extends outward from the second electrode 130.
  • the intermediate layer 210 is located between the organic layer 120 and the coating layer 220. For this reason, it is possible to prevent the covering layer 220 from cracking with high reliability.
  • the intermediate layer 210 is located between the organic layer 120 and the coating layer 220. For this reason, even when the difference between the linear expansion coefficient of the organic layer 120 (particularly, the first partial layer of the organic layer 120) and the linear expansion coefficient of the covering layer 220 is large, the intermediate layer 210 exerts stress on the covering layer 220. Can be relaxed. In this way, it is possible to prevent the covering layer 220 from cracking with high reliability.
  • FIG. 11 is a cross-sectional view showing a light emitting device 10 according to Modification 1, and corresponds to FIG. 4 of the embodiment.
  • the light emitting device 10 according to this modification is the same as the light emitting device 10 according to the embodiment except for the following points.
  • the light emitting device 10 includes a plurality of intermediate layers 210.
  • Each of the plurality of intermediate layers 210 is defined by insulating layers 140 that are between the light emitting portions 152 adjacent to each other and adjacent to each other.
  • the coating layer 220 is prevented from coming into contact with the organic layer 120.
  • the covering layer 220 covers the organic layer 120 between the insulating layers 140 adjacent to each other. This prevents the covering layer 220 from contacting the organic layer 120 between the insulating layers 140 adjacent to each other. Further, the covering layer 220 covers the organic layer 120 in a region overlapping with the insulating layer 140. For this reason, the coating layer 220 is prevented from coming into contact with the organic layer 120 in a region overlapping with the insulating layer 140. In this way, it is possible to prevent the covering layer 220 from cracking with high reliability.
  • the covering layer 220 is in contact with the second electrode 130. Even in this case, the coating layer 220 can be prevented from cracking.
  • the second electrode 130 is a metal layer
  • the second electrode 130 has high ductility. In this case, even if the organic layer 120 expands due to heating during the manufacturing process of the light emitting device 10, the second electrode 130 can be deformed so as to relieve the stress of the coating layer 220. For this reason, even if the coating layer 220 is in contact with the second electrode 130, the coating layer 220 can be prevented from cracking.
  • the intermediate layer 210 flattens the unevenness generated on the first surface 102 of the substrate 100 due to the presence of the plurality of light emitting portions 152.
  • the second surface (upper surface) of the intermediate layer 210 is located at a height h2 (first height) from the first surface 102.
  • the upper end of the light emitting unit 152 (the upper end of the second electrode 130) is located at a height h3 (second height) from the first surface 102 of the substrate 100.
  • the absolute value of the difference between the height h2 and the height h3 is smaller than the height h3. In this way, the intermediate layer 210 flattens the unevenness generated on the first surface 102 of the substrate 100 due to the presence of the plurality of light emitting portions 152.
  • each second surface (upper surface) of the plurality of intermediate layers 210 is substantially flat, and specifically, substantially parallel to the first surface 102 of the substrate 100.
  • stress is prevented from concentrating on a specific position of the coating layer 220. In this way, it is possible to prevent the covering layer 220 from cracking with high reliability.
  • the intermediate layer 210 is located between the organic layer 120 and the covering layer 220. For this reason, even when the difference between the linear expansion coefficient of the organic layer 120 (particularly, the first partial layer of the organic layer 120) and the linear expansion coefficient of the covering layer 220 is large, the intermediate layer 210 exerts stress on the covering layer 220. Can be relaxed. In this way, it is possible to prevent the covering layer 220 from cracking with high reliability.
  • FIG. 12 is a diagram showing a modification of FIG.
  • the light emitting device 10 shown in the figure is the same as the light emitting device 10 shown in FIG. 11 except that each of the plurality of organic layers 120 overlaps each of the plurality of first electrodes 110.
  • the organic layer 120 does not spread over the plurality of light emitting portions 152 and the plurality of light transmitting portions 154.
  • the first surface 102 of the substrate 100 has a region exposed from the organic layer 120 between the light emitting units 152 adjacent to each other.
  • the organic layer 120 extends outward from the second electrode 130.
  • the intermediate layer 210 is located between the organic layer 120 and the coating layer 220. For this reason, it is possible to prevent the covering layer 220 from cracking with high reliability.
  • FIG. 13 is a cross-sectional view illustrating a light emitting device 10 according to Modification Example 2, and corresponds to FIG. 4 of the embodiment.
  • the light emitting device 10 according to this modification is the same as the light emitting device 10 according to the embodiment except for the following points.
  • the intermediate layer 210 is provided to relieve the stress of the coating layer 220.
  • the intermediate layer 210 is a metal layer (that is, a layer having high ductility), and specifically includes, for example, aluminum, and more specifically, for example, an aluminum layer or It is an aluminum alloy layer (for example, an Al / Mn alloy layer). From the viewpoint of cost, the intermediate layer 210 is preferably an aluminum layer. In this example, the intermediate layer 210 can be deformed to relieve the stress of the covering layer 220.
  • a metal layer is not limited to the case where aluminum is included.
  • the intermediate layer 210 may include at least one of gold, iron, copper, silver, zinc, tin, nickel, and manganese.
  • the ductility of the material of the intermediate layer 210 may be higher than the ductility of the material of the first partial layer of the organic layer 120 and the ductility of the material of the coating layer 220.
  • the intermediate layer 210 is also provided to prevent a gas that deteriorates the light emitting unit 152 from entering the light emitting unit 152.
  • the coating layer 220 is a metal layer, the coating layer 220 has gas barrier properties. For this reason, the covering layer 220 can function so as to prevent a gas that deteriorates the light emitting unit 152 from entering the light emitting unit 152.
  • the thickness of the intermediate layer 210 is 1 nm or more and 50 nm or less in one example.
  • the thickness of the intermediate layer 210 (metal layer) is preferably somewhat thick, and as described above, it is 1 nm or more, preferably 5 nm or more. is there.
  • the thickness of the intermediate layer 210 (metal layer) is preferably thin to some extent, and as described above, is 50 nm or less, preferably 20 nm or less. .
  • the intermediate layer 210 has conductivity. For this reason, the plurality of second electrodes 130 can be connected to each other via the intermediate layer 210. Specifically, in the example shown in the drawing, the intermediate layer 210 is in contact with the plurality of intermediate layers 210. Even in such a case, the plurality of second electrodes 130 can be connected to each other through the intermediate layer 210.
  • FIG. 14 is a cross-sectional view showing a light emitting device 10 according to Modification 3, and corresponds to FIG. 4 of the embodiment.
  • the light emitting device 10 according to this modification is the same as the light emitting device 10 according to the embodiment except for the following points.
  • the intermediate layer 210 includes a light-transmitting inorganic material.
  • the inorganic material is a compound containing Si, more specifically, silicon oxynitride (SiON), silicon oxide (SiO 2 ), or silicon nitride (SiN).
  • the intermediate layer 210 is formed by vapor deposition or CVD, for example.
  • both high light transmittance and high gas barrier properties can be realized.
  • the intermediate layer 210 has translucency. Therefore, even if a part of the intermediate layer 210 is located in the light transmitting portion 154, the light transmittance of the light transmitting portion 154 can be increased.
  • the intermediate layer 210 includes an inorganic material. In general, the gas barrier properties of inorganic materials are high. Therefore, high gas barrier properties can be realized.
  • the thickness of the intermediate layer 210 is preferably somewhat thick, and in one example, it can be set to 1 ⁇ m or more, preferably 3 ⁇ m or more.
  • the thickness of the intermediate layer 210 is preferably thin to some extent, and in one example, can be 100 ⁇ m or less, preferably 10 ⁇ m or less.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

La présente invention concerne une couche de revêtement (220) qui est formée par dépôt de couche atomique (ALD) et qui comprend un matériau inorganique isolant. Une couche intermédiaire (210) fait face à un premier côté de surface (102) d'un substrat (100) et présente une première surface en contact avec une couche organique (120) dans des sections de transmission de lumière (154). La couche intermédiaire (210) présente une seconde surface sur le côté opposé à la première surface de la couche intermédiaire (210) et est en contact avec la couche de revêtement (220). Le matériau dans la surface intermédiaire (210) présente une ductilité élevée. La surface intermédiaire (210) s'étale sur une pluralité de sections électroluminescentes (152) et une pluralité de sections de transmission de lumière (154).
PCT/JP2017/003848 2016-09-30 2017-02-02 Dispositif photoémetteur WO2018061236A1 (fr)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100164369A1 (en) * 2008-12-30 2010-07-01 Industrial Technology Research Institute Apparatus of organic light emitting diode and packaging method of the same
JP2010199064A (ja) * 2009-02-26 2010-09-09 Samsung Mobile Display Co Ltd 有機発光表示装置
JP2011034996A (ja) * 2009-07-29 2011-02-17 Tdk Corp 透過型有機ｅｌ表示装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100164369A1 (en) * 2008-12-30 2010-07-01 Industrial Technology Research Institute Apparatus of organic light emitting diode and packaging method of the same
JP2010199064A (ja) * 2009-02-26 2010-09-09 Samsung Mobile Display Co Ltd 有機発光表示装置
JP2011034996A (ja) * 2009-07-29 2011-02-17 Tdk Corp 透過型有機ｅｌ表示装置

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