WO2018042743A1 - Substrate inspection device, substrate treatment device, substrate inspection method, and substrate treatment method - Google Patents

Substrate inspection device, substrate treatment device, substrate inspection method, and substrate treatment method Download PDF

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Publication number
WO2018042743A1
WO2018042743A1 PCT/JP2017/013870 JP2017013870W WO2018042743A1 WO 2018042743 A1 WO2018042743 A1 WO 2018042743A1 JP 2017013870 W JP2017013870 W JP 2017013870W WO 2018042743 A1 WO2018042743 A1 WO 2018042743A1
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WIPO (PCT)
Prior art keywords
substrate
unit
imaging
rotation
inspection apparatus
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PCT/JP2017/013870
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French (fr)
Japanese (ja)
Inventor
真人 柏山
チャー ペチュレスキー
森田　彰彦
友宏 松尾
Original Assignee
株式会社Ｓｃｒｅｅｎホールディングス
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Publication date
Application filed by 株式会社Ｓｃｒｅｅｎホールディングス filed Critical 株式会社Ｓｃｒｅｅｎホールディングス
Priority to CN201780047626.XA priority Critical patent/CN109564853B/en
Priority to KR1020197007517A priority patent/KR20190039269A/en
Publication of WO2018042743A1 publication Critical patent/WO2018042743A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements

Definitions

  • the present invention relates to a substrate inspection apparatus, a substrate processing apparatus, a substrate inspection method, and a substrate processing method for inspecting a substrate.
  • a substrate supported horizontally by a spin chuck is rotated.
  • a coating solution such as a resist solution is discharged to the center of the upper surface of the substrate, whereby a coating film is formed on the entire surface of the substrate.
  • the coating film is exposed and then developed to form a predetermined pattern on the coating film.
  • the post-exposure state varies for each portion of the substrate, resulting in poor processing of the substrate. Therefore, the surface condition of the substrate may be inspected.
  • Patent Document 1 describes a substrate processing apparatus having a surface inspection processing unit.
  • illumination light is continuously applied to a radial region on the substrate, and reflected light from the substrate is received by a CCD (charge coupled device) line sensor.
  • CCD charge coupled device
  • An object of the present invention is to provide a substrate inspection apparatus, a substrate processing apparatus, a substrate inspection method, and a substrate processing method capable of detecting defects in the surface state of a substrate with high accuracy.
  • a substrate inspection apparatus includes a rotation holding unit that rotatably holds a substrate, an imaging unit that is provided to image the substrate held by the rotation holding unit, and a first imaging Sometimes, a first imaging control unit that controls the imaging unit so as to generate first image data indicating an image of the substrate, and rotation holding so that the substrate is rotated by a predetermined angle after the first imaging. A first rotation control unit that controls the imaging unit, and the second imaging data after the substrate is rotated by the first rotation control unit to control the imaging unit to generate second image data indicating an image of the substrate A second imaging control unit; and a determination unit that determines the presence / absence of a defect in the surface state of the substrate based on the first and second image data.
  • the substrate is rotatably held by the rotation holding unit.
  • the substrate held by the rotation holding unit is imaged to generate first image data indicating an image of the substrate.
  • the substrate is rotated by a predetermined angle by the rotation holding unit.
  • the second image data indicating the image of the substrate is generated by imaging the substrate held by the rotation holding unit. Based on the first and second image data, the presence or absence of a defect in the surface state of the substrate is determined.
  • the surface of the substrate indicated by the first image data and the surface of the substrate indicated by the second image data have different aspects such as gloss. Therefore, when a defect exists on the surface of the substrate, the possibility that the defect appears clearly in an image indicated by at least one of the first and second image data is improved. Thereby, it becomes possible to detect the surface state defect of the substrate with high accuracy.
  • the imaging unit receives a light projecting unit that emits light extending longer than the diameter of the substrate in the first direction, and reflected light from the substrate, and the first or second image data based on the amount of received light
  • a second direction that intersects the first direction, or the second direction so that the light from the light projecting unit is irradiated on the entire surface of the substrate.
  • a relative movement unit provided to be relatively movable in the third direction opposite to the imaging unit, and the imaging unit and the rotation holding unit in the second direction during the first imaging.
  • a first movement control unit that controls the relative movement unit to relatively move, and a relative movement unit that relatively moves the imaging unit and the rotation holding unit in the third direction during the second imaging.
  • a second movement control unit for controlling.
  • the first and second imaging data are generated by the reciprocating movement of the substrate and the imaging unit relatively by the relative movement unit.
  • the entire surface of the substrate can be imaged using a small imaging unit. Thereby, the first and second imaging data can be obtained in a short time, and the substrate inspection apparatus can be made compact.
  • the relative movement unit may include a movement holding unit that holds the rotation holding unit and moves the rotation holding unit in the second or third direction with respect to the imaging unit. In this case, the entire surface of the substrate can be imaged with a simple configuration.
  • the light projecting unit and the light receiving unit may be arranged separately. In this case, the degree of freedom of arrangement of the imaging unit can be improved.
  • the substrate inspection apparatus determines the direction of the substrate held by the rotation holding unit, and the substrate is identified before the first imaging based on the direction of the substrate determined by the direction determination unit.
  • the substrate is inspected with the plurality of substrates aligned. Thereby, a several board
  • the substrate inspection apparatus includes a third rotation control unit that controls the rotation holding unit so that the substrate rotates at least once before the rotation of the substrate by the second rotation control unit, and a third rotation control unit. And a notch detection unit for detecting a notch of the substrate rotated by the notch detection unit, wherein the direction determination unit determines the orientation of the substrate based on the rotation angle of the substrate when the notch detection unit detects the notch of the substrate. Also good. In this case, the orientation of the substrate can be accurately determined with a simple configuration.
  • the first rotation control unit may control the rotation holding unit so that the orientation of the substrate during the first imaging and the orientation of the substrate during the second imaging are non-parallel.
  • the aspect of the surface of the substrate indicated by the first image data and the aspect of the surface of the substrate indicated by the second image data are greatly different.
  • the predetermined angle may be an odd multiple of 90 degrees.
  • the aspect of the surface of the substrate indicated by the first image data is significantly different from the aspect of the surface of the substrate indicated by the second image data.
  • a substrate processing apparatus includes a film forming unit that forms a coating film on a surface by supplying a coating liquid to the surface of the substrate, and a substrate on which the coating film is formed by the film forming unit.
  • a substrate inspection apparatus for inspecting a surface state, and a transport mechanism for transporting the substrate between the film forming unit and the substrate inspection apparatus.
  • a coating film is formed on the surface by supplying a coating liquid to the surface of the substrate by the film forming unit.
  • the substrate having the coating film formed on the surface by the film forming unit is transported by the transport mechanism.
  • the surface state of the substrate transported by the transport mechanism is inspected by the inspection apparatus.
  • the substrate is rotatably held by the rotation holding unit.
  • the substrate held by the rotation holding unit is imaged to generate first image data indicating an image of the substrate.
  • the substrate is rotated by a predetermined angle by the rotation holding unit.
  • the second image data indicating the image of the substrate is generated by imaging the substrate held by the rotation holding unit. Based on the first and second image data, the presence or absence of a defect in the surface state of the substrate is determined.
  • the surface of the substrate indicated by the first image data and the surface of the substrate indicated by the second image data have different aspects such as gloss. Therefore, when a defect exists on the surface of the substrate, the possibility that the defect appears clearly in an image indicated by at least one of the first and second image data is improved. Thereby, it becomes possible to detect the surface state defect of the substrate with high accuracy.
  • a substrate inspection method includes a step of rotatably holding a substrate by a rotation holding unit, and a substrate by imaging the substrate held by the rotation holding unit during the first imaging.
  • Generating first image data indicating the image of the first image, rotating the substrate by a predetermined angle by the rotation holding unit after the first imaging, and rotating the second imaging after the rotation of the substrate Step of generating second image data indicating an image of the substrate by imaging the substrate held by the holding unit, and determining the presence or absence of a defect in the surface state of the substrate based on the first and second image data Including the step of.
  • the substrate is rotatably held by the rotation holding unit.
  • the substrate held by the rotation holding unit is imaged to generate first image data indicating an image of the substrate.
  • the substrate is rotated by a predetermined angle by the rotation holding unit.
  • the second image data indicating the image of the substrate is generated by imaging the substrate held by the rotation holding unit. Based on the first and second image data, the presence or absence of a defect in the surface state of the substrate is determined.
  • the surface of the substrate indicated by the first image data and the surface of the substrate indicated by the second image data have different aspects such as gloss. Therefore, when a defect exists on the surface of the substrate, the possibility that the defect appears clearly in an image indicated by at least one of the first and second image data is improved. Thereby, it becomes possible to detect the surface state defect of the substrate with high accuracy.
  • a substrate processing method includes a step of forming a coating film on a surface by supplying a coating liquid to the surface of the substrate by the film forming unit, and a coating film on the surface by the film forming unit.
  • the coating film is formed on the surface by supplying the coating liquid to the surface of the substrate by the film forming unit.
  • the substrate having the coating film formed on the surface by the film forming unit is transported by the transport mechanism.
  • the surface state of the substrate transported by the transport mechanism is inspected by the above-described substrate inspection method.
  • the substrate is rotatably held by the rotation holding unit.
  • the substrate held by the rotation holding unit is imaged to generate first image data indicating an image of the substrate.
  • the substrate is rotated by a predetermined angle by the rotation holding unit.
  • the second image data indicating the image of the substrate is generated by imaging the substrate held by the rotation holding unit. Based on the first and second image data, the presence or absence of a defect in the surface state of the substrate is determined.
  • the surface of the substrate indicated by the first image data and the surface of the substrate indicated by the second image data have different aspects such as gloss. Therefore, when a defect exists on the surface of the substrate, the possibility that the defect appears clearly in an image indicated by at least one of the first and second image data is improved. Thereby, it becomes possible to detect the surface state defect of the substrate with high accuracy.
  • FIG. 1 is a perspective view showing an appearance of a substrate inspection apparatus according to an embodiment of the present invention.
  • FIG. 2 is a schematic side view showing an internal configuration of the substrate inspection apparatus.
  • FIG. 3 is a schematic plan view showing the internal configuration of the substrate inspection apparatus.
  • FIG. 4 is a block diagram showing a configuration of a local controller for controlling the substrate inspection apparatus.
  • FIG. 5 is a diagram for explaining the operation of the substrate inspection apparatus.
  • FIG. 6 is a diagram for explaining the operation of the substrate inspection apparatus.
  • FIG. 7 is a flowchart showing the operation of the main controller of the local controller of FIG. 4 in the inspection process.
  • FIG. 8 is a flowchart showing the operation of the main controller of the local controller of FIG. 4 in the inspection process.
  • FIG. 1 is a perspective view showing an appearance of a substrate inspection apparatus according to an embodiment of the present invention.
  • FIG. 2 is a schematic side view showing an internal configuration of the substrate inspection apparatus.
  • FIG. 3 is a schematic plan view
  • FIG. 9 is a schematic plan view of a substrate processing apparatus provided with the substrate inspection apparatus of FIG.
  • FIG. 10 is a schematic side view showing the internal configuration of the coating processing section, the development processing section, and the cleaning / drying processing section of FIG.
  • FIG. 11 is a plan view showing the configuration of the coating processing unit.
  • 12 is a schematic side view showing the internal configuration of the heat treatment section and the cleaning / drying processing section of FIG.
  • FIG. 13 is a schematic side view showing the internal configuration of the transport unit.
  • the substrate means a semiconductor substrate, a liquid crystal display substrate, a plasma display substrate, an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, a photomask substrate, or the like.
  • the substrate used in this embodiment has at least a circular outer peripheral portion.
  • the outer peripheral portion excluding the positioning notch has a circular shape.
  • FIG. 1 is a perspective view showing an appearance of a substrate inspection apparatus 200 according to an embodiment of the present invention.
  • FIG. 2 is a schematic side view showing an internal configuration of the substrate inspection apparatus 200.
  • FIG. 3 is a schematic plan view showing an internal configuration of the substrate inspection apparatus 200.
  • the substrate inspection apparatus 200 includes a casing unit 210, a light projecting unit 220, a reflecting unit 230, a light receiving unit 240, a rotation driving unit 250, a moving unit 260, and a notch detecting unit 270.
  • the light projecting unit 220, the reflecting unit 230, and the light receiving unit 240 constitute the imaging unit 1.
  • the imaging unit 1, the rotation driving unit 250, the moving unit 260 and the notch detection unit 270 are accommodated in the housing unit 210.
  • the casing 210 includes a substantially rectangular bottom surface 211 and four substantially rectangular side surfaces 212 to 215.
  • the side surface portions 212 and 214 are located at both end portions in the longitudinal direction of the bottom surface portion 211, and the side surface portions 213 and 215 are located at both end portions in the width direction of the bottom surface portion 211, respectively.
  • casing part 210 has a substantially rectangular upper opening.
  • the housing part 210 may further include an upper surface part that closes the upper opening.
  • the width direction of the bottom surface portion 211 is simply referred to as the width direction, and the longitudinal direction of the bottom surface portion 211 is referred to as the front-rear direction. Further, in the front-rear direction, the direction from the side surface portion 214 toward the side surface portion 212 is defined as the front, and the opposite direction is defined as the rear.
  • a slit-like opening 216 for transporting the substrate W between the outside and the inside of the housing part 210 is formed in a part from the side part 212 to the front part of the side part 213.
  • the light projecting unit 220 includes, for example, one or a plurality of light sources, and is attached to the inner surfaces of the side surface portions 213 and 215 of the housing unit 210 so as to extend in the width direction. As will be described later, a substrate W to be inspected is carried into the housing unit 210 from the opening 216 and passes below the light projecting unit 220.
  • the light projecting unit 220 emits strip-shaped light larger than the diameter of the substrate W obliquely downward and rearward.
  • the reflection unit 230 includes, for example, a mirror, and is attached to the inner surfaces of the side surface portions 213 and 215 of the housing unit 210 so as to extend behind the light projecting unit 220 and in the width direction. As shown in FIG. 2, the strip-like light emitted obliquely downward and rearward by the light projecting unit 220 is reflected obliquely upward and backward by the substrate W.
  • the reflection unit 230 reflects the strip-shaped light reflected by the substrate W in the substantially horizontal direction from the rear.
  • the light receiving part 240 is attached on the bottom part 211 of the casing part 210 behind the reflecting part 230.
  • the light receiving unit 240 is a camera, for example, and includes a plurality of lenses and a color CCD (charge coupled device) line sensor.
  • the light receiving unit 240 receives the band-like light reflected by the reflecting unit 230 and generates image data based on pixel data corresponding to the amount of light received by each pixel.
  • the image data is composed of a plurality of pixel data corresponding to a plurality of pixels.
  • the rotation driving unit 250 is, for example, a spin chuck, and includes a driving device 251 and a rotation holding unit 252.
  • the drive device 251 is an electric motor, for example, and has a rotating shaft 251a.
  • the drive device 251 is provided with an encoder (not shown).
  • the rotation holding unit 252 is attached to the tip of the rotation shaft 251a of the driving device 251 and is driven to rotate around the vertical axis while holding the substrate W to be inspected.
  • the moving unit 260 includes a plurality of (two in this example) guide members 261 and a moving holding unit 262.
  • the plurality of guide members 261 are attached to the bottom surface portion 211 of the housing portion 210 so as to extend in the front-rear direction in a state of being separated in the width direction.
  • the movement holding unit 262 moves in the front-rear direction along the plurality of guide members 261 while holding the rotation driving unit 250.
  • the notch detection unit 270 is a reflective photoelectric sensor including, for example, a light projecting element and a light receiving element, and is attached to the front upper portion of the inner surface of the side surface part 215 of the housing part 210.
  • the notch detector 270 emits light downward and receives reflected light from the substrate W.
  • the notch detection unit 270 detects the presence or absence of a notch on the substrate W based on the amount of light received from the substrate W rotated by the rotation driving unit 250.
  • a transmissive photoelectric sensor may be used as the notch detection unit 270.
  • FIG. 4 is a block diagram showing a configuration of a local controller 400 for controlling the substrate inspection device 200.
  • the local controller 400 includes a main control unit 401, a storage unit 402, an imaging control unit 410, a rotation control unit 420, a movement control unit 430, a direction determination unit 440, and a defect determination unit 450.
  • the main control unit 401 includes, for example, a CPU (Central Processing Unit).
  • the storage unit 402 includes, for example, a non-volatile memory or a hard disk, and stores an inspection program for executing an inspection process.
  • the main control unit 401 executes the inspection program stored in the storage unit 402, thereby realizing the functions of the imaging control unit 410, the rotation control unit 420, the movement control unit 430, the direction determination unit 440, and the defect determination unit 450. .
  • the imaging control unit 410 controls the operation of the imaging unit 1.
  • the rotation control unit 420 acquires an output signal from the encoder of the driving device 251 (FIG. 2) of the rotation driving unit 250 to detect the rotation angle of the driving device 251 (the rotation angle of the substrate W), and from the direction determination unit 440. The determination result of the orientation of the substrate W is acquired.
  • the rotation control unit 420 controls the operation of the rotation driving unit 250 based on the rotation angle of the driving device 251 or the direction of the substrate W.
  • the movement control unit 430 controls the operation of the moving unit 260.
  • the direction determination unit 440 controls the operation of the notch detection unit 270.
  • the direction determination unit 440 acquires the detection result of the notch by the notch detection unit 270, acquires the rotation angle of the driving device 251 detected by the rotation control unit 420, and detects when the notch of the substrate W is detected.
  • the orientation of the substrate W is determined based on the rotation angle of the driving device 251.
  • the defect determination unit 450 acquires image data from the imaging unit 1 and determines whether there is a defect in the surface state of the substrate W based on the image data.
  • the determination result by the defect determination unit 450 is stored in the storage unit 402.
  • FIGS. 5A to 6B are diagrams for explaining the operation of the substrate inspection apparatus 200.
  • FIG. 5A, 5B and 6A, 6B a plan view of the substrate inspection apparatus 200 is shown on the left, and a schematic diagram of the substrate W to be inspected is shown on the right.
  • the substrate W after the development process is inspected. Therefore, as shown on the right side of FIGS. 5A to 6B, a plurality of chips CH to be products are formed on the surface of the substrate W.
  • the rotation drive unit 250 is located at the front part in the housing unit 210.
  • the substrate W to be inspected is carried into the casing unit 210 through the opening 216 by the substrate W transport mechanism (for example, the transport mechanism 137 or the transport mechanism 138 in FIG. 13 described later) and held by the rotation drive unit 250. Is done.
  • the substrate 260 is moved backward by the moving unit 260.
  • the strip-shaped light emitted from the light projecting unit 220 is scanned relatively on the substrate W in the front-rear direction.
  • the entire substrate W is irradiated with the band-like light.
  • the band-like light sequentially reflected from the substrate W is reflected by the reflection unit 230 and guided to the light receiving unit 240. Thereby, first image data indicating an image of the entire surface of the substrate W is generated.
  • the rotation drive unit 250 rotates the substrate W by 90 degrees.
  • the substrate 260 is moved to the initial initial position by the moving unit 260.
  • second image data indicating an image of the entire surface of the substrate W is generated in the same manner as the operation of FIG.
  • the defect determination unit 450 in FIG. The determination of the presence or absence of a defect on the substrate W by the defect determination unit 450 may be performed at an arbitrary time.
  • FIGS. 7 and 8 are flowcharts showing the operation of the main controller 401 of the local controller 400 of FIG. 4 in the inspection process.
  • the inspection process by the main control unit 401 will be described with reference to the substrate inspection apparatus 200 of FIGS. 1 and 2, the local controller 400 of FIG. 4, and the flowchart of FIG.
  • the main control unit 401 causes the moving unit 260 to move the rotation driving unit 250 to the initial position in the front part in the casing unit 210 (step S1). Note that when the rotation drive unit 250 is in the initial position in the initial state, the process of step S1 is omitted.
  • the inspection target substrate W after the development processing is carried into the casing unit 210 through the opening 216 by the transport mechanism.
  • the main control unit 401 holds the loaded substrate W by the rotation driving unit 250 (step S2).
  • the main control unit 401 rotates the substrate W by the rotation driving unit 250 (step S3) and detects the rotation angle of the substrate W (step S4). Further, the main control unit 401 irradiates the peripheral edge of the substrate W with the notch detection unit 270 (step S5) and receives light from the substrate W (step S6). Steps S3 to S6 are performed almost simultaneously.
  • the main control unit 401 determines whether or not the notch NT of the substrate W has been detected by the notch detection unit 270 based on the processing results of steps S3 to S6 (step S7). When the notch NT of the substrate W is detected, the main control unit 401 determines the orientation of the substrate W based on the rotation angle of the substrate W when the notch NT is detected (step S8). If the notch NT of the substrate W is not detected in step S7, the process proceeds to step S9.
  • step S9 the main control unit 401 determines whether or not the substrate W has rotated 360 degrees (step S9). If the substrate W has not rotated 360 degrees, the process returns to step S3 and the processes of steps S3 to S8 are repeated. When the substrate W has rotated 360 degrees, the main control unit 401 rotates the substrate W by the rotation driving unit 250 so that the substrate W faces a specific direction (step S10).
  • the main control unit 401 moves the substrate W together with the rotation driving unit 250 by the moving unit 260 (step S11).
  • the substrate W passes under the light projecting unit 220.
  • the main control unit 401 uses the imaging unit 1 to irradiate the substrate W with strip-shaped light (step S12) and receive the strip-shaped light from the substrate W (step S13). Steps S11 to S13 are performed almost simultaneously.
  • the main control unit 401 generates first image data by the imaging unit 1 based on the results of the processes in steps S11 to S13 (step S14). Subsequently, the main control unit 401 rotates the substrate W by 90 degrees by the rotation driving unit 250 (step S15).
  • the substrate 260 is moved forward (initial position) together with the rotation drive unit 250 by the moving unit 260 (step S16).
  • the substrate W passes again below the light projecting unit 220.
  • the main control unit 401 uses the imaging unit 1 to irradiate the substrate W with strip-shaped light (step S17) and receive the strip-shaped light from the substrate W (step S18). Steps S16 to S18 are performed almost simultaneously.
  • the main control unit 401 generates second image data by the imaging unit 1 based on the processing results of steps S16 to S18 (step S18).
  • the main control unit 401 determines the presence / absence of a defect in the surface state of the substrate W based on the generated first and second image data (step S20). Finally, the main control unit 401 stores the determination result about the presence or absence of defects in the surface state of the substrate W in the storage unit 402 of FIG. 4 (step S21), and ends the inspection process.
  • FIG. 9 is a schematic plan view of a substrate processing apparatus 100 provided with the substrate inspection apparatus 200 of FIG.
  • arrows indicating X direction, Y direction, and Z direction orthogonal to each other are attached in order to clarify the positional relationship.
  • the X direction and the Y direction are orthogonal to each other in the horizontal plane, and the Z direction corresponds to the vertical direction.
  • the substrate processing apparatus 100 includes an indexer block 11, a coating block 12, a developing block 13, a cleaning / drying processing block 14A, and a loading / unloading block 14B.
  • the cleaning / drying processing block 14A and the carry-in / carry-out block 14B constitute an interface block 14.
  • the exposure device 15 is disposed adjacent to the carry-in / carry-out block 14B.
  • the indexer block 11 includes a plurality of carrier placement units 111 and a conveyance unit 112. On each carrier placement section 111, a carrier 113 that houses a plurality of substrates W in multiple stages is placed.
  • the transport unit 112 is provided with a main controller 114 and a transport mechanism 115.
  • the main controller 114 controls various components of the substrate processing apparatus 100.
  • the transport mechanism 115 transports the substrate W while holding the substrate W.
  • the coating block 12 includes a coating processing unit 121, a transport unit 122, and a heat treatment unit 123.
  • the coating processing unit 121 and the heat treatment unit 123 are provided so as to face each other with the conveyance unit 122 interposed therebetween.
  • substrate platforms PASS1 to PASS4 (see FIG. 13) on which the substrate W is mounted are provided.
  • the transport unit 122 is provided with transport mechanisms 127 and 128 (see FIG. 13) for transporting the substrate W.
  • the development block 13 includes a development processing unit 131, a transport unit 132, and a heat treatment unit 133.
  • the development processing unit 131 and the heat treatment unit 133 are provided to face each other with the transport unit 132 interposed therebetween.
  • substrate platforms PASS5 to PASS8 (see FIG. 13) on which the substrate W is placed are provided.
  • the transport unit 132 is provided with transport mechanisms 137 and 138 (see FIG. 13) for transporting the substrate W.
  • the cleaning / drying processing block 14 ⁇ / b> A includes cleaning / drying processing units 161 and 162 and a transport unit 163.
  • the cleaning / drying processing units 161 and 162 are provided to face each other with the conveyance unit 163 interposed therebetween.
  • the transport unit 163 is provided with transport mechanisms 141 and 142.
  • placement / buffer units P-BF1 and P-BF2 are provided between the transport unit 163 and the transport unit 132.
  • the placement / buffer units P-BF1 and P-BF2 are configured to accommodate a plurality of substrates W.
  • a substrate platform PASS9 and a later-described placement / cooling unit P-CP are provided between the transport mechanisms 141 and 142 so as to be adjacent to the carry-in / carry-out block 14B.
  • the placement / cooling unit P-CP has a function of cooling the substrate W (for example, a cooling plate).
  • the substrate W is cooled to a temperature suitable for the exposure process.
  • a transport mechanism 143 is provided in the carry-in / carry-out block 14B. The transport mechanism 143 carries the substrate W into and out of the exposure apparatus 15.
  • FIG. 10 is a schematic side view showing the internal configuration of the application processing unit 121, the development processing unit 131, and the cleaning / drying processing unit 161 in FIG.
  • the coating processing section 121 is provided with coating processing chambers 21, 22, 23, and 24 in a hierarchical manner.
  • a coating processing unit 129 is provided in each of the coating processing chambers 21 to 24, a coating processing unit 129 is provided.
  • the development processing unit 131 is provided with development processing chambers 31, 32, 33, and 34 in a hierarchical manner.
  • a development processing unit 139 is provided in each of the development processing chambers 31 to 34.
  • FIG. 11 is a plan view showing the configuration of the coating processing unit 129.
  • each coating processing unit 129 includes a standby unit 20, a plurality of spin chucks 25, a plurality of cups 27, a plurality of processing liquid nozzles 28, a nozzle transport mechanism 29, and a plurality of edge rinse nozzles 30. Is provided. In the present embodiment, two spin chucks 25, cups 27, and edge rinse nozzles 30 are provided in each coating processing unit 129.
  • Each spin chuck 25 is rotationally driven by a driving device (not shown) (for example, an electric motor) while holding the substrate W.
  • the cup 27 is provided so as to surround the periphery of the spin chuck 25.
  • Various processing liquids are supplied to each processing liquid nozzle 28 from a processing liquid storage unit (not shown) through processing liquid piping. At the time when the processing liquid is not supplied to the substrate W, each processing liquid nozzle 28 is inserted into the standby unit 20.
  • any of the processing liquid nozzles 28 of the standby unit 20 is held by the nozzle transport mechanism 29 and transported above the substrate W.
  • the processing liquid is applied onto the rotating substrate W by discharging the processing liquid from the processing liquid nozzle 28 while the spin chuck 25 rotates.
  • a processing liquid for antireflection film (hereinafter referred to as antireflection liquid) is supplied from the processing liquid nozzle 28 to the substrate W. Is done.
  • a resist film processing liquid (hereinafter referred to as a resist liquid) is supplied from the processing liquid nozzle 28 to the substrate W.
  • the edge rinse nozzle 30 is moved from the predetermined standby position to the vicinity of the peripheral edge of the substrate W.
  • the peripheral portion of the substrate W refers to a region having a constant width along the outer peripheral portion of the substrate W on the surface of the substrate W.
  • the rinse liquid is discharged from the edge rinse nozzle 30 toward the peripheral edge of the rotating substrate W while the spin chuck 25 rotates, so that the peripheral edge of the processing liquid applied to the substrate W is dissolved. Thereby, the processing liquid at the peripheral edge of the substrate W is removed.
  • the development processing unit 139 includes a plurality of spin chucks 35 and a plurality of cups 37, similar to the coating processing unit 129. As shown in FIG. 9, the development processing unit 139 includes two slit nozzles 38 that discharge the developer and a moving mechanism 39 that moves the slit nozzles 38 in the X direction.
  • the spin chuck 35 is rotated by a driving device (not shown). Thereby, the substrate W is rotated. The developer is supplied to each substrate W that rotates while the slit nozzle 38 moves. Thereby, the development processing of the substrate W is performed.
  • the cleaning / drying processing unit 161 is provided with a plurality (four in this example) of cleaning / drying processing units SD1. In the cleaning / drying processing unit SD1, the substrate W before the exposure processing is cleaned and dried.
  • FIG. 12 is a schematic side view showing the internal configuration of the heat treatment units 123 and 133 and the cleaning / drying processing unit 162 of FIG.
  • the heat treatment part 123 has an upper heat treatment part 101 provided above and a lower heat treatment part 102 provided below.
  • the upper heat treatment unit 101 and the lower heat treatment unit 102 are provided with a plurality of heat treatment units PHP, a plurality of adhesion reinforcement processing units PAHP, and a plurality of cooling units CP.
  • the local controller 300 is provided at the top of the heat treatment unit 123.
  • the local controller 300 controls operations of the coating processing unit 121, the transport unit 122, and the heat treatment unit 123 based on a command from the main controller 114 in FIG.
  • the substrate W is heated and cooled.
  • adhesion reinforcement processing unit PAHP adhesion reinforcement processing for improving the adhesion between the substrate W and the antireflection film is performed.
  • an adhesion enhancing agent such as HMDS (hexamethyldisilazane) is applied to the substrate W, and the substrate W is subjected to heat treatment.
  • the cooling unit CP the substrate W is cooled.
  • the heat treatment part 133 includes an upper heat treatment part 103 provided above and a lower heat treatment part 104 provided below.
  • the upper heat treatment unit 103 and the lower heat treatment unit 104 are provided with a cooling unit CP, a plurality of heat treatment units PHP, an edge exposure unit EEW, and a substrate inspection apparatus 200.
  • the thermal processing units PHP of the upper thermal processing unit 103 and the lower thermal processing unit 104 are configured to be able to carry in the substrate W from the cleaning / drying processing block 14A.
  • the local controller 400 controls the operations of the substrate inspection apparatus 200 and the operations of the development processing unit 131, the transport unit 132, and the heat treatment unit 133 based on a command from the main controller 114 in FIG. 9.
  • edge exposure unit EEW exposure processing (edge exposure processing) of the peripheral portion of the substrate W is performed.
  • edge exposure processing edge exposure processing
  • the resist film on the peripheral edge of the substrate W is removed during the subsequent development process. This prevents the resist film on the peripheral portion of the substrate W from peeling off and becoming particles when the peripheral portion of the substrate W comes into contact with another portion after the development processing.
  • the substrate inspection apparatus 200 the surface state of the substrate W after the development processing is inspected.
  • the cleaning / drying processing section 162 is provided with a plurality (five in this example) of cleaning / drying processing units SD2.
  • the substrate W after the exposure processing is cleaned and dried.
  • FIG. 13 is a schematic side view showing the internal configuration of the conveying units 122, 132, and 163.
  • the transfer unit 122 includes an upper transfer chamber 125 and a lower transfer chamber 126.
  • the transfer unit 132 includes an upper transfer chamber 135 and a lower transfer chamber 136.
  • the upper transfer chamber 125 is provided with a transfer mechanism 127
  • the lower transfer chamber 126 is provided with a transfer mechanism 128.
  • the upper transfer chamber 135 is provided with a transfer mechanism 137
  • the lower transfer chamber 136 is provided with a transfer mechanism 138.
  • Substrate platforms PASS 1 and PASS 2 are provided between the transport unit 112 and the upper transport chamber 125, and substrate platforms PASS 3 and PASS 4 are provided between the transport unit 112 and the lower transport chamber 126.
  • Substrate platforms PASS5 and PASS6 are provided between the upper transport chamber 125 and the upper transport chamber 135, and substrate platforms PASS7 and PASS8 are provided between the lower transport chamber 126 and the lower transport chamber 136. It is done.
  • a placement / buffer unit P-BF1 is provided between the upper transfer chamber 135 and the transfer unit 163, and a placement / buffer unit P-BF2 is provided between the lower transfer chamber 136 and the transfer unit 163. .
  • a substrate platform PASS9 and a plurality of placement / cooling units P-CP are provided so as to be adjacent to the carry-in / carry-out block 14B in the transport unit 163.
  • the placement / buffer unit P-BF1 is configured such that the substrate W can be loaded and unloaded by the transport mechanism 137 and the transport mechanism 141 (FIG. 9).
  • the placement / buffer unit P-BF2 is configured such that the substrate W can be carried in and out by the transport mechanism 138 and the transport mechanism 141 (FIG. 9).
  • the substrate platform PASS9 and the placement / cooling unit P-CP are configured such that the substrate W can be carried in and out by the transport mechanisms 141 and 142 (FIG. 9) and the transport mechanism 143.
  • the substrate W to be transported from the indexer block 11 to the coating block 12 is placed on the substrate platform PASS1 and the substrate platform PASS3, and the coating block 12 is placed on the substrate platform PASS2 and the substrate platform PASS4.
  • a substrate W to be transported to the indexer block 11 is placed.
  • a substrate W transported from the coating block 12 to the development block 13 is placed on the substrate platform PASS5 and the substrate platform PASS7, and from the development block 13 on the substrate platform PASS6 and the substrate platform PASS8.
  • a substrate W to be transported to the coating block 12 is placed.
  • the substrate W transported from the development block 13 to the cleaning / drying processing block 14A is placed.
  • the substrate W to be transported from the cleaning / drying processing block 14A to the loading / unloading block 14B is placed on the placement / cooling section P-CP.
  • the substrate W to be transported from the carry-in / carry-out block 14B to the cleaning / drying processing block 14A is placed on the substrate platform PASS9.
  • the transport mechanism 127 delivers the substrate W to the coating processing chambers 21 and 22 (FIG. 10), the substrate platforms PASS1, PASS2, PASS5, PASS6 and the upper thermal processing unit 101 (FIG. 12).
  • the transport mechanism 128 delivers the substrate W to the coating processing chambers 23 and 24 (FIG. 10), the substrate platforms PASS3, PASS4, PASS7 and PASS8, and the lower thermal processing unit 102 (FIG. 12).
  • the transport mechanism 137 delivers the substrate W to the development processing chambers 31 and 32 (FIG. 10), the substrate platforms PASS5 and PASS6, the placement / buffer unit P-BF1, and the upper thermal processing unit 103 (FIG. 12).
  • the transport mechanism 138 delivers the substrate W to the development processing chambers 33 and 34 (FIG. 10), the substrate platforms PASS7 and PASS8, the placement / buffer unit P-BF2, and the lower thermal processing unit 104 (FIG. 12). .
  • a carrier 113 in which an unprocessed substrate W is accommodated is placed on the carrier placement portion 111 (FIG. 9) of the indexer block 11.
  • the transport mechanism 115 transports the unprocessed substrate W from the carrier 113 to the substrate platforms PASS1 and PASS3 (FIG. 13). Further, the transport mechanism 115 transports the processed substrate W placed on the substrate platforms PASS2 and PASS4 (FIG. 13) to the carrier 113.
  • the transport mechanism 127 applies the unprocessed substrate W placed on the substrate platform PASS1 to the adhesion strengthening processing unit PAHP (FIG. 12), the cooling unit CP (FIG. 12), and the coating process. It conveys to chamber 22 (FIG. 10) in order.
  • the transport mechanism 127 transfers the substrate W in the coating treatment chamber 22 to the heat treatment unit PHP (FIG. 12), the cooling unit CP (FIG. 12), the coating treatment chamber 21 (FIG. 10), the heat treatment unit PHP (FIG. 12), and The substrate is sequentially transferred to the substrate platform PASS5 (FIG. 13).
  • the cooling unit CP cools the substrate W to a temperature suitable for forming the antireflection film.
  • an antireflection film is formed on the substrate W by the coating processing unit 129 (FIG. 10).
  • the substrate W is cooled to a temperature suitable for formation of the resist film in the cooling unit CP.
  • a resist film is formed on the substrate W by the coating processing unit 129 (FIG. 10).
  • the substrate W is heat-treated in the heat treatment unit PHP, and the substrate W is placed on the substrate platform PASS5.
  • the transport mechanism 127 transports the substrate W after the development process and the inspection process placed on the substrate platform PASS6 (FIG. 13) to the substrate platform PASS2 (FIG. 13).
  • the transport mechanism 128 applies the unprocessed substrate W placed on the substrate platform PASS3 to the adhesion reinforcement processing unit PAHP (FIG. 12), the cooling unit CP (FIG. 12), and the coating processing chamber 24 (FIG. 10). ) In order. Next, the transport mechanism 128 transfers the substrate W in the coating processing chamber 24 to the thermal processing unit PHP (FIG. 12), the cooling unit CP (FIG. 12), the coating processing chamber 23 (FIG. 10), the thermal processing unit PHP (FIG. 12), and The substrate is sequentially transferred to the substrate platform PASS7 (FIG. 13).
  • the transport mechanism 128 transports the substrate W after the development process and the inspection process placed on the substrate platform PASS8 (FIG. 13) to the substrate platform PASS4 (FIG. 13).
  • the processing contents of the substrate W in the coating processing chambers 23 and 24 (FIG. 10) and the lower thermal processing section 102 (FIG. 12) are the same as those in the coating processing chambers 21 and 22 (FIG. 10) and the upper thermal processing section 101 (FIG. 12).
  • the processing contents of W are the same.
  • the transport mechanism 137 transfers the substrate W after the resist film formation placed on the substrate platform PASS5 to the edge exposure unit EEW (FIG. 12) and the placement / buffer unit P-BF1 ( It conveys in order to FIG. In this case, the edge exposure processing is performed on the substrate W in the edge exposure unit EEW. The substrate W after the edge exposure processing is placed on the placement / buffer unit P-BF1.
  • the transport mechanism 137 takes out the substrate W after the exposure processing and after the heat treatment from the heat treatment unit PHP (FIG. 12) adjacent to the cleaning / drying processing block 14A.
  • the transport mechanism 137 uses the cooling unit CP (FIG. 12), the development processing chambers 31 and 32 (FIG. 10), the heat treatment unit PHP (FIG. 12), the substrate inspection apparatus 200 (FIG. 12), and the substrate. It conveys to mounting part PASS6 (FIG. 13) in order.
  • the developing process of the substrate W is performed by the developing unit 139 in one of the developing chambers 31 and 32. Thereafter, the heat treatment of the substrate W is performed in the heat treatment unit PHP. Further, the substrate inspection apparatus 200 performs an inspection process on the substrate W, and the substrate W is placed on the substrate platform PASS6.
  • the transport mechanism 138 sequentially transfers the resist film-formed substrate W placed on the substrate platform PASS7 to the edge exposure unit EEW (FIG. 12) and the placement / buffer unit P-BF2 (FIG. 13). Transport.
  • the transport mechanism 138 takes out the substrate W after the exposure process and after the heat treatment from the heat treatment unit PHP (FIG. 12) adjacent to the interface block 14.
  • the transport mechanism 138 transfers the substrate W to the cooling unit CP (FIG. 12), one of the development processing chambers 33 and 34 (FIG. 10), the heat treatment unit PHP (FIG. 12), the substrate inspection apparatus 200 (FIG. 12), and the substrate. It conveys in order to mounting part PASS8 (FIG. 13).
  • the processing contents of the substrate W in the development processing chambers 33 and 34 and the lower thermal processing section 104 are the same as the processing contents of the substrate W in the development processing chambers 31 and 32 and the upper thermal processing section 103, respectively.
  • the transport mechanism 141 (FIG. 9) performs the cleaning / drying processing unit SD1 (FIG. 10) and the substrate W placed on the placement / buffer units P-BF1, P-BF2 (FIG. 13) and It is sequentially conveyed to the placement / cooling section P-CP (FIG. 13).
  • the substrate W is cooled to a temperature suitable for the exposure processing by the exposure device 15 (FIG. 9) in the placement / cooling unit P-CP. Is done.
  • the transport mechanism 142 (FIG. 9) performs cleaning and drying processing unit SD2 (FIG. 12) and the upper thermal processing unit 103 or the lower thermal processing unit 104 on the substrate W after the exposure processing placed on the substrate platform PASS9 (FIG. 13). It conveys to heat processing unit PHP (FIG. 12) in order. In this case, after the substrate W is cleaned and dried in the cleaning / drying processing unit SD2, a post-exposure bake (PEB) process is performed in the heat treatment unit PHP.
  • PEB post-exposure bake
  • the transport mechanism 143 (FIG. 9) transports the substrate W before the exposure process placed on the placement / cooling unit P-CP (FIG. 13) to the exposure apparatus 15. Further, the transport mechanism 143 (FIG. 9) takes out the substrate W after the exposure processing from the exposure apparatus 15, and transports the substrate W to the substrate platform PASS9 (FIG. 13).
  • first image data is generated by imaging the substrate W held by the rotation holding unit 252 by the imaging unit 1. Thereafter, the substrate W is rotated by a predetermined angle by the rotation holding unit 252. After the rotation of the substrate W, the substrate W held by the rotation holding unit 252 is imaged by the imaging unit 1, whereby second image data is generated. Based on the first and second image data, the presence / absence of a defect in the surface state of the substrate W is determined.
  • the surface of the substrate W indicated by the first image data and the surface of the substrate W indicated by the second image data have different aspects such as gloss. Therefore, when a defect exists on the surface of the substrate W, the possibility that the defect appears clearly in an image indicated by at least one of the first and second image data is improved. Thereby, it becomes possible to detect the surface state defect of the substrate W with high accuracy. In addition, since the inspection is performed in a state where the directions of the plurality of substrates W are aligned, the plurality of substrates W can be inspected uniformly.
  • the moving unit 260 causes the substrate W and the imaging unit 1 to reciprocate relative to each other in the front-rear direction to generate first and second imaging data. Further, the entire surface of the substrate W can be imaged using the small imaging unit 1. Thus, the first and second imaging data can be obtained in a short time, and the substrate inspection apparatus 200 can be made compact.
  • the inspection process is performed after the development process, but the present invention is not limited to this.
  • the inspection process may be performed before or after the edge exposure process, for example, or may be performed at another time.
  • the rotation angle of the substrate W in the process of step S15 is 90 degrees, but the present invention is not limited to this.
  • the rotation angle of the substrate W may be a desired angle.
  • the rotation angle of the substrate W is preferably an angle other than an integer multiple of 180 degrees, and more preferably an odd multiple of 90 degrees.
  • the aspect of the surface of the substrate W indicated by the first image data is greatly different from the aspect of the surface of the substrate W indicated by the second image data.
  • the substrate W is rotated so that the substrate W faces a specific direction in step S10, but the present invention is not limited to this.
  • the substrate processing apparatus 100 is configured such that the substrate W is carried into the substrate inspection apparatus 200 in a state where the substrate W is directed in a specific direction, the processing of steps S3 to S10 may be omitted, and the substrate inspection apparatus 200 is omitted.
  • the notch detector 270 may not be provided.
  • the inspection process may be performed with the substrate W facing in an arbitrary direction, the processes in steps S3 to S10 may be omitted, and the substrate inspection apparatus 200 is provided with a notch detection unit 270. It does not have to be done.
  • the light projecting unit 220 and the light receiving unit 240 of the imaging unit 1 are configured as separate bodies, but the present invention is not limited to this.
  • the light projecting unit 220 and the light receiving unit 240 of the imaging unit 1 may be configured integrally.
  • the imaging unit 1 is provided with the reflection unit 230, but the present invention is not limited to this.
  • the imaging unit 1 may not be provided with the reflecting unit 230.
  • the moving unit 260 is configured to move the rotation driving unit 250 (substrate W) in the front-rear direction with respect to the imaging unit 1, but the present invention is not limited to this.
  • the moving unit 260 may be configured to relatively move the imaging unit 1 and the rotation driving unit 250 in the front-rear direction. Therefore, the moving unit 260 may be configured to move the imaging unit 1 in the front-rear direction with respect to the rotation driving unit 250.
  • the imaging unit 1 and the rotation drive unit 250 are relatively moved, but the present invention is not limited to this.
  • the imaging area of the imaging unit 1 is larger than the entire surface of the substrate W, the imaging unit 1 and the rotation driving unit 250 do not have to be moved relatively, and the substrate inspection apparatus 200 is provided with the moving unit 260. It does not have to be.
  • the substrate inspection apparatus 200 is provided in the heat treatment section 133 of the substrate processing apparatus 100, but the present invention is not limited to this.
  • the substrate inspection apparatus 200 may be provided in other parts such as the coating block 12 of the substrate processing apparatus 100.
  • the substrate inspection apparatus 200 may not be provided in the substrate processing apparatus 100 but may be provided alone for performing an inspection process on the substrate.
  • the substrate W is an example of a substrate
  • the rotation holding unit 252 is an example of a rotation holding unit
  • the imaging unit 1 is an example of an imaging unit
  • the imaging control unit 410 is the first and second. This is an example of the imaging control unit.
  • the rotation control unit 420 is an example of first to third rotation control units
  • the defect determination unit 450 is an example of a determination unit
  • the substrate inspection device 200 is an example of a substrate inspection device
  • the light projecting unit 220 is a projector. It is an example of a light part
  • the light-receiving part 240 is an example of a light-receiving part.
  • the movement unit 260 is an example of a relative movement unit
  • the movement control unit 430 is an example of first and second movement control units
  • the movement holding unit 262 is an example of a movement holding unit
  • the direction determination unit 440 is a direction. It is an example of a determination part.
  • the notch detection unit 270 is an example of a notch detection unit
  • the coating processing unit 129 is an example of a film forming unit
  • the transfer mechanisms 127, 128, 137, and 138 are examples of transfer mechanisms
  • the substrate processing apparatus 100 is a substrate processing unit. It is an example of an apparatus.
  • the present invention can be effectively used for inspection of the surface of various substrates.

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Abstract

A substrate W is held by a rotating holding unit (252) such that the substrate can rotate. First image data indicating an image of the substrate is generated by picking up, at the time of performing first image pickup, the image of the substrate by means of an image pickup unit (1), said substrate being held by the rotating holding unit. After performing the first image pickup, the substrate is rotated by a predetermined angle by means of the rotating holding unit. Second image data indicating an image of the substrate is generated by picking up, at the time of performing second image pickup after rotating the substrate, the image of the substrate by means of the image pickup unit, said substrate being held by the rotating holding unit. On the basis of the first and second image data, whether there is a defective in the surface state of the substrate is determined.

Description

基板検査装置、基板処理装置、基板検査方法および基板処理方法Substrate inspection apparatus, substrate processing apparatus, substrate inspection method, and substrate processing method
　本発明は、基板の検査を行う基板検査装置、基板処理装置、基板検査方法および基板処理方法に関する。 The present invention relates to a substrate inspection apparatus, a substrate processing apparatus, a substrate inspection method, and a substrate processing method for inspecting a substrate.
　基板処理装置においては、スピンチャックにより水平に支持された基板が回転される。この状態で、基板の上面の中央部にレジスト液等の塗布液が吐出されることにより、基板の表面全体に塗布膜が形成される。塗布膜が露光された後、現像されることにより、塗布膜に所定のパターンが形成される。ここで、基板の表面が不均一な状態であると、基板の部分ごとに露光後の状態にばらつきが生じ、基板の処理不良が発生する。そこで、基板の表面状態の検査が行われることがある。 In the substrate processing apparatus, a substrate supported horizontally by a spin chuck is rotated. In this state, a coating solution such as a resist solution is discharged to the center of the upper surface of the substrate, whereby a coating film is formed on the entire surface of the substrate. The coating film is exposed and then developed to form a predetermined pattern on the coating film. Here, if the surface of the substrate is in a non-uniform state, the post-exposure state varies for each portion of the substrate, resulting in poor processing of the substrate. Therefore, the surface condition of the substrate may be inspected.
　特許文献１には、表面検査処理ユニットを有する基板処理装置が記載されている。表面検査処理ユニットにおいては、基板上の半径領域に継続的に照明光が照射され、基板からの反射光がＣＣＤ（電荷結合素子）ラインセンサにより受光される。この状態で、基板が１回転することにより、基板の表面の全体に照明光が照射され、ＣＣＤラインセンサの受光量分布に基づいて、基板の表面全体での反射光の明るさの分布が表面画像データとして得られる。表面画像データに基づいて、基板の表面状態が正常であるか否かが判定される。
特開２０１１－６６０４９号公報 Patent Document 1 describes a substrate processing apparatus having a surface inspection processing unit. In the surface inspection processing unit, illumination light is continuously applied to a radial region on the substrate, and reflected light from the substrate is received by a CCD (charge coupled device) line sensor. In this state, when the substrate rotates once, the entire surface of the substrate is irradiated with illumination light, and the brightness distribution of the reflected light on the entire surface of the substrate is based on the received light amount distribution of the CCD line sensor. Obtained as image data. Whether or not the surface state of the substrate is normal is determined based on the surface image data.
JP 2011-66049 A
　検査においては、基板の表面状態の欠陥が高い精度で検出されることが好ましい。そこで、基板の表面状態の欠陥を従来よりも高い精度で検出することが可能な検査装置および方法の実現が望まれる。 In the inspection, it is preferable that defects in the surface state of the substrate are detected with high accuracy. Therefore, it is desired to realize an inspection apparatus and method capable of detecting defects in the surface state of the substrate with higher accuracy than before.
　本発明の目的は、基板の表面状態の欠陥を高い精度で検出することが可能な基板検査装置、基板処理装置、基板検査方法および基板処理方法を提供することである。 An object of the present invention is to provide a substrate inspection apparatus, a substrate processing apparatus, a substrate inspection method, and a substrate processing method capable of detecting defects in the surface state of a substrate with high accuracy.
　（１）本発明の一局面に従う基板検査装置は、基板を回転可能に保持する回転保持部と、回転保持部により保持された基板を撮像するように設けられた撮像部と、第１の撮像時に、基板の画像を示す第１の画像データを生成するように撮像部を制御する第１の撮像制御部と、第１の撮像後に、予め定められた角度だけ基板を回転させるように回転保持部を制御する第１の回転制御部と、第１の回転制御部による基板の回転後の第２の撮像時に、基板の画像を示す第２の画像データを生成するように撮像部を制御する第２の撮像制御部と、第１および第２の画像データに基づいて、基板の表面状態の欠陥の有無を判定する判定部とを備える。 (1) A substrate inspection apparatus according to an aspect of the present invention includes a rotation holding unit that rotatably holds a substrate, an imaging unit that is provided to image the substrate held by the rotation holding unit, and a first imaging Sometimes, a first imaging control unit that controls the imaging unit so as to generate first image data indicating an image of the substrate, and rotation holding so that the substrate is rotated by a predetermined angle after the first imaging. A first rotation control unit that controls the imaging unit, and the second imaging data after the substrate is rotated by the first rotation control unit to control the imaging unit to generate second image data indicating an image of the substrate A second imaging control unit; and a determination unit that determines the presence / absence of a defect in the surface state of the substrate based on the first and second image data.
　この基板検査装置においては、回転保持部により基板が回転可能に保持される。第１の撮像時に、回転保持部により保持された基板が撮像されることにより、基板の画像を示す第１の画像データが生成される。第１の撮像後に、回転保持部により予め定められた角度だけ基板が回転される。基板の回転後の第２の撮像時に、回転保持部により保持された基板が撮像されることにより、基板の画像を示す第２の画像データが生成される。第１および第２の画像データに基づいて、基板の表面状態の欠陥の有無が判定される。 In this substrate inspection apparatus, the substrate is rotatably held by the rotation holding unit. During the first imaging, the substrate held by the rotation holding unit is imaged to generate first image data indicating an image of the substrate. After the first imaging, the substrate is rotated by a predetermined angle by the rotation holding unit. At the time of the second imaging after the rotation of the substrate, the second image data indicating the image of the substrate is generated by imaging the substrate held by the rotation holding unit. Based on the first and second image data, the presence or absence of a defect in the surface state of the substrate is determined.
　この構成によれば、第１の画像データにより示される基板の表面と、第２の画像データにより示される基板の表面とでは、光沢等の態様が異なる。そのため、基板の表面に欠陥が存在する場合には、第１および第２の画像データの少なくとも一方により示される画像に当該欠陥が鮮明に現れる可能性が向上する。これにより、基板の表面状態の欠陥を高い精度で検出することが可能になる。 According to this configuration, the surface of the substrate indicated by the first image data and the surface of the substrate indicated by the second image data have different aspects such as gloss. Therefore, when a defect exists on the surface of the substrate, the possibility that the defect appears clearly in an image indicated by at least one of the first and second image data is improved. Thereby, it becomes possible to detect the surface state defect of the substrate with high accuracy.
　（２）撮像部は、第１の方向において基板の直径よりも長く延びる光を出射する投光部と、基板からの反射光を受光し、受光量に基づいて第１または第２の画像データを生成する受光部とを含み、基板検査装置は、投光部からの光が基板の一面の全体に照射されるように、第１の方向に交差する第２の方向、または第２の方向とは逆の第３の方向に撮像部と回転保持部とを相対的に移動可能に設けられた相対移動部と、第１の撮像時に、撮像部と回転保持部とを第２の方向に相対的に移動させるように相対移動部を制御する第１の移動制御部と、第２の撮像時に、撮像部と回転保持部とを第３の方向に相対的に移動させるように相対移動部を制御する第２の移動制御部とをさらに備えてもよい。 (2) The imaging unit receives a light projecting unit that emits light extending longer than the diameter of the substrate in the first direction, and reflected light from the substrate, and the first or second image data based on the amount of received light A second direction that intersects the first direction, or the second direction so that the light from the light projecting unit is irradiated on the entire surface of the substrate. A relative movement unit provided to be relatively movable in the third direction opposite to the imaging unit, and the imaging unit and the rotation holding unit in the second direction during the first imaging. A first movement control unit that controls the relative movement unit to relatively move, and a relative movement unit that relatively moves the imaging unit and the rotation holding unit in the third direction during the second imaging. And a second movement control unit for controlling.
　この場合、相対移動部により基板と撮像部とが相対的に往復移動することにより第１および第２の撮像データが生成される。また、小型の撮像部を用いて基板の一面の全体を撮像することができる。これにより、第１および第２の撮像データを短時間で得ることができるとともに、基板検査装置をコンパクトにすることができる。 In this case, the first and second imaging data are generated by the reciprocating movement of the substrate and the imaging unit relatively by the relative movement unit. In addition, the entire surface of the substrate can be imaged using a small imaging unit. Thereby, the first and second imaging data can be obtained in a short time, and the substrate inspection apparatus can be made compact.
　（３）相対移動部は、回転保持部を保持しかつ撮像部に対して回転保持部を第２または第３の方向に移動させる移動保持部を含んでもよい。この場合、簡単な構成で基板の一面の全体を撮像することができる。 (3) The relative movement unit may include a movement holding unit that holds the rotation holding unit and moves the rotation holding unit in the second or third direction with respect to the imaging unit. In this case, the entire surface of the substrate can be imaged with a simple configuration.
　（４）投光部と受光部とは別体として配置されてもよい。この場合、撮像部の配置の自由度を向上させることができる。 (4) The light projecting unit and the light receiving unit may be arranged separately. In this case, the degree of freedom of arrangement of the imaging unit can be improved.
　（５）基板検査装置は、回転保持部により保持された基板の向きを判定する方向判定部と、方向判定部により判定された基板の向きに基づいて、第１の撮像前に基板が特定の方向を向くように回転保持部を制御する第２の回転制御部とをさらに備えてもよい。この場合、複数の基板の向きが揃った状態で基板が検査される。これにより、複数の基板を画一的に検査することができる。 (5) The substrate inspection apparatus determines the direction of the substrate held by the rotation holding unit, and the substrate is identified before the first imaging based on the direction of the substrate determined by the direction determination unit. You may further provide the 2nd rotation control part which controls a rotation holding | maintenance part so that it may face a direction. In this case, the substrate is inspected with the plurality of substrates aligned. Thereby, a several board | substrate can be test | inspected uniformly.
　（６）基板検査装置は、第２の回転制御部による基板の回転の前に、基板が少なくとも１回転するように回転保持部を制御する第３の回転制御部と、第３の回転制御部により回転される基板のノッチを検出するノッチ検出部とをさらに備え、方向判定部は、ノッチ検出部により基板のノッチが検出されたときの基板の回転角度に基づいて基板の向きを判定してもよい。この場合、簡単な構成で基板の向きを正確に判定することができる。 (6) The substrate inspection apparatus includes a third rotation control unit that controls the rotation holding unit so that the substrate rotates at least once before the rotation of the substrate by the second rotation control unit, and a third rotation control unit. And a notch detection unit for detecting a notch of the substrate rotated by the notch detection unit, wherein the direction determination unit determines the orientation of the substrate based on the rotation angle of the substrate when the notch detection unit detects the notch of the substrate. Also good. In this case, the orientation of the substrate can be accurately determined with a simple configuration.
　（７）第１の回転制御部は、第１の撮像時における基板の向きと第２の撮像時における基板の向きとが非平行となるように回転保持部を制御してもよい。この場合、第１の画像データにより示される基板の表面の態様と、第２の画像データにより示される基板の表面の態様とが大きく異なる。これにより、基板の表面に欠陥が存在する場合に、第１または第２の画像データにより示される画像に当該欠陥が鮮明に現れる可能性をより向上させることができる。 (7) The first rotation control unit may control the rotation holding unit so that the orientation of the substrate during the first imaging and the orientation of the substrate during the second imaging are non-parallel. In this case, the aspect of the surface of the substrate indicated by the first image data and the aspect of the surface of the substrate indicated by the second image data are greatly different. Thereby, when a defect exists in the surface of a board | substrate, possibility that the said defect will appear clearly in the image shown by the 1st or 2nd image data can be improved more.
　（８）予め定められた角度は９０度の奇数倍の角度であってもよい。この場合、第１の画像データにより示される基板の表面の態様と、第２の画像データにより示される基板の表面の態様とがさらに大きく異なる。これにより、基板の表面に欠陥が存在する場合に、第１または第２の画像データにより示される画像に当該欠陥が鮮明に現れる可能性をさらに向上させることができる。 (8) The predetermined angle may be an odd multiple of 90 degrees. In this case, the aspect of the surface of the substrate indicated by the first image data is significantly different from the aspect of the surface of the substrate indicated by the second image data. Thereby, when a defect exists in the surface of a board | substrate, possibility that the said defect will appear clearly in the image shown by the 1st or 2nd image data can further be improved.
　（９）本発明の他の局面に従う基板処理装置は、塗布液を基板の表面に供給することにより表面に塗布膜を形成する膜形成部と、膜形成部により塗布膜が形成された基板の表面状態を検査する本発明の一局面に従う基板検査装置と、膜形成部と基板検査装置との間で基板を搬送する搬送機構とを備える。 (9) A substrate processing apparatus according to another aspect of the present invention includes a film forming unit that forms a coating film on a surface by supplying a coating liquid to the surface of the substrate, and a substrate on which the coating film is formed by the film forming unit. A substrate inspection apparatus according to one aspect of the present invention for inspecting a surface state, and a transport mechanism for transporting the substrate between the film forming unit and the substrate inspection apparatus.
　この基板処理装置においては、膜形成部により塗布液が基板の表面に供給されることにより、表面に塗布膜が形成される。膜形成部により表面に塗布膜が形成された基板が搬送機構により搬送される。搬送機構により搬送された基板の表面状態が上記の検査装置により検査される。 In this substrate processing apparatus, a coating film is formed on the surface by supplying a coating liquid to the surface of the substrate by the film forming unit. The substrate having the coating film formed on the surface by the film forming unit is transported by the transport mechanism. The surface state of the substrate transported by the transport mechanism is inspected by the inspection apparatus.
　基板検査装置においては、回転保持部により基板が回転可能に保持される。第１の撮像時に、回転保持部により保持された基板が撮像されることにより、基板の画像を示す第１の画像データが生成される。第１の撮像後に、回転保持部により予め定められた角度だけ基板が回転される。基板の回転後の第２の撮像時に、回転保持部により保持された基板が撮像されることにより、基板の画像を示す第２の画像データが生成される。第１および第２の画像データに基づいて、基板の表面状態の欠陥の有無が判定される。 In the substrate inspection apparatus, the substrate is rotatably held by the rotation holding unit. During the first imaging, the substrate held by the rotation holding unit is imaged to generate first image data indicating an image of the substrate. After the first imaging, the substrate is rotated by a predetermined angle by the rotation holding unit. At the time of the second imaging after the rotation of the substrate, the second image data indicating the image of the substrate is generated by imaging the substrate held by the rotation holding unit. Based on the first and second image data, the presence or absence of a defect in the surface state of the substrate is determined.
　この構成によれば、第１の画像データにより示される基板の表面と、第２の画像データにより示される基板の表面とでは、光沢等の態様が異なる。そのため、基板の表面に欠陥が存在する場合には、第１および第２の画像データの少なくとも一方により示される画像に当該欠陥が鮮明に現れる可能性が向上する。これにより、基板の表面状態の欠陥を高い精度で検出することが可能になる。 According to this configuration, the surface of the substrate indicated by the first image data and the surface of the substrate indicated by the second image data have different aspects such as gloss. Therefore, when a defect exists on the surface of the substrate, the possibility that the defect appears clearly in an image indicated by at least one of the first and second image data is improved. Thereby, it becomes possible to detect the surface state defect of the substrate with high accuracy.
　（１０）本発明のさらに他の局面に従う基板検査方法は、回転保持部により基板を回転可能に保持するステップと、第１の撮像時に、回転保持部により保持された基板を撮像することにより基板の画像を示す第１の画像データを生成するステップと、第１の撮像後に、回転保持部により予め定められた角度だけ基板を回転させるステップと、基板の回転後の第２の撮像時に、回転保持部により保持された基板を撮像することにより基板の画像を示す第２の画像データを生成するステップと、第１および第２の画像データに基づいて、基板の表面状態の欠陥の有無を判定するステップとを含む。 (10) A substrate inspection method according to still another aspect of the present invention includes a step of rotatably holding a substrate by a rotation holding unit, and a substrate by imaging the substrate held by the rotation holding unit during the first imaging. Generating first image data indicating the image of the first image, rotating the substrate by a predetermined angle by the rotation holding unit after the first imaging, and rotating the second imaging after the rotation of the substrate Step of generating second image data indicating an image of the substrate by imaging the substrate held by the holding unit, and determining the presence or absence of a defect in the surface state of the substrate based on the first and second image data Including the step of.
　この基板検査方法によれば、回転保持部により基板が回転可能に保持される。第１の撮像時に、回転保持部により保持された基板が撮像されることにより、基板の画像を示す第１の画像データが生成される。第１の撮像後に、回転保持部により予め定められた角度だけ基板が回転される。基板の回転後の第２の撮像時に、回転保持部により保持された基板が撮像されることにより、基板の画像を示す第２の画像データが生成される。第１および第２の画像データに基づいて、基板の表面状態の欠陥の有無が判定される。 According to this substrate inspection method, the substrate is rotatably held by the rotation holding unit. During the first imaging, the substrate held by the rotation holding unit is imaged to generate first image data indicating an image of the substrate. After the first imaging, the substrate is rotated by a predetermined angle by the rotation holding unit. At the time of the second imaging after the rotation of the substrate, the second image data indicating the image of the substrate is generated by imaging the substrate held by the rotation holding unit. Based on the first and second image data, the presence or absence of a defect in the surface state of the substrate is determined.
　この方法によれば、第１の画像データにより示される基板の表面と、第２の画像データにより示される基板の表面とでは、光沢等の態様が異なる。そのため、基板の表面に欠陥が存在する場合には、第１および第２の画像データの少なくとも一方により示される画像に当該欠陥が鮮明に現れる可能性が向上する。これにより、基板の表面状態の欠陥を高い精度で検出することが可能になる。 According to this method, the surface of the substrate indicated by the first image data and the surface of the substrate indicated by the second image data have different aspects such as gloss. Therefore, when a defect exists on the surface of the substrate, the possibility that the defect appears clearly in an image indicated by at least one of the first and second image data is improved. Thereby, it becomes possible to detect the surface state defect of the substrate with high accuracy.
　（１１）本発明のさらに他の局面に従う基板処理方法は、膜形成部により塗布液を基板の表面に供給することにより表面に塗布膜を形成するステップと、膜形成部により表面に塗布膜が形成された基板を搬送機構により搬送するステップと、搬送機構により搬送された基板の表面状態を検査する本発明のさらに他の局面に従う基板検査方法におけるステップとを含む。 (11) A substrate processing method according to still another aspect of the present invention includes a step of forming a coating film on a surface by supplying a coating liquid to the surface of the substrate by the film forming unit, and a coating film on the surface by the film forming unit. A step of transporting the formed substrate by the transport mechanism; and a step in the substrate inspection method according to still another aspect of the present invention for inspecting the surface state of the substrate transported by the transport mechanism.
　この基板処理方法によれば、膜形成部により塗布液が基板の表面に供給されることにより、表面に塗布膜が形成される。膜形成部により表面に塗布膜が形成された基板が搬送機構により搬送される。搬送機構により搬送された基板の表面状態が上記の基板検査方法により検査される。 According to this substrate processing method, the coating film is formed on the surface by supplying the coating liquid to the surface of the substrate by the film forming unit. The substrate having the coating film formed on the surface by the film forming unit is transported by the transport mechanism. The surface state of the substrate transported by the transport mechanism is inspected by the above-described substrate inspection method.
　上記の基板検査方法によれば、回転保持部により基板が回転可能に保持される。第１の撮像時に、回転保持部により保持された基板が撮像されることにより、基板の画像を示す第１の画像データが生成される。第１の撮像後に、回転保持部により予め定められた角度だけ基板が回転される。基板の回転後の第２の撮像時に、回転保持部により保持された基板が撮像されることにより、基板の画像を示す第２の画像データが生成される。第１および第２の画像データに基づいて、基板の表面状態の欠陥の有無が判定される。 According to the above substrate inspection method, the substrate is rotatably held by the rotation holding unit. During the first imaging, the substrate held by the rotation holding unit is imaged to generate first image data indicating an image of the substrate. After the first imaging, the substrate is rotated by a predetermined angle by the rotation holding unit. At the time of the second imaging after the rotation of the substrate, the second image data indicating the image of the substrate is generated by imaging the substrate held by the rotation holding unit. Based on the first and second image data, the presence or absence of a defect in the surface state of the substrate is determined.
　この方法によれば、第１の画像データにより示される基板の表面と、第２の画像データにより示される基板の表面とでは、光沢等の態様が異なる。そのため、基板の表面に欠陥が存在する場合には、第１および第２の画像データの少なくとも一方により示される画像に当該欠陥が鮮明に現れる可能性が向上する。これにより、基板の表面状態の欠陥を高い精度で検出することが可能になる。 According to this method, the surface of the substrate indicated by the first image data and the surface of the substrate indicated by the second image data have different aspects such as gloss. Therefore, when a defect exists on the surface of the substrate, the possibility that the defect appears clearly in an image indicated by at least one of the first and second image data is improved. Thereby, it becomes possible to detect the surface state defect of the substrate with high accuracy.
　本発明によれば、基板の表面状態の欠陥を高い精度で検出することが可能になる。 According to the present invention, it is possible to detect a defect in the surface state of the substrate with high accuracy.
図１は本発明の一実施の形態に係る基板検査装置の外観を示す斜視図である。FIG. 1 is a perspective view showing an appearance of a substrate inspection apparatus according to an embodiment of the present invention. 図２は基板検査装置の内部の構成を示す模式的側面図である。FIG. 2 is a schematic side view showing an internal configuration of the substrate inspection apparatus. 図３は基板検査装置の内部の構成を示す模式的平面図である。FIG. 3 is a schematic plan view showing the internal configuration of the substrate inspection apparatus. 図４は基板検査装置を制御するためのローカルコントローラの構成を示すブロック図である。FIG. 4 is a block diagram showing a configuration of a local controller for controlling the substrate inspection apparatus. 図５は基板検査装置の動作を説明するための図である。FIG. 5 is a diagram for explaining the operation of the substrate inspection apparatus. 図６は基板検査装置の動作を説明するための図である。FIG. 6 is a diagram for explaining the operation of the substrate inspection apparatus. 図７は検査処理における図４のローカルコントローラの主制御部の動作を示すフローチャートである。FIG. 7 is a flowchart showing the operation of the main controller of the local controller of FIG. 4 in the inspection process. 図８は検査処理における図４のローカルコントローラの主制御部の動作を示すフローチャートである。FIG. 8 is a flowchart showing the operation of the main controller of the local controller of FIG. 4 in the inspection process. 図９は図１の基板検査装置を備えた基板処理装置の模式的平面図である。FIG. 9 is a schematic plan view of a substrate processing apparatus provided with the substrate inspection apparatus of FIG. 図１０は図９の塗布処理部、現像処理部および洗浄乾燥処理部の内部構成を示す模式的側面図である。FIG. 10 is a schematic side view showing the internal configuration of the coating processing section, the development processing section, and the cleaning / drying processing section of FIG. 図１１は塗布処理ユニットの構成を示す平面図である。FIG. 11 is a plan view showing the configuration of the coating processing unit. 図１２は図９の熱処理部および洗浄乾燥処理部の内部構成を示す模式的側面図である。12 is a schematic side view showing the internal configuration of the heat treatment section and the cleaning / drying processing section of FIG. 図１３は搬送部の内部構成を示す模式的側面図である。FIG. 13 is a schematic side view showing the internal configuration of the transport unit.
　（１）基板検査装置の構成
　以下、本発明の一実施の形態に係る基板検査装置、基板処理装置、基板検査方法および基板処理方法について図面を用いて説明する。なお、以下の説明において、基板とは、半導体基板、液晶表示装置用基板、プラズマディスプレイ用基板、光ディスク用基板、磁気ディスク用基板、光磁気ディスク用基板またはフォトマスク用基板等をいう。また、本実施の形態で用いられる基板は、少なくとも一部が円形の外周部を有する。例えば、位置決め用のノッチを除く外周部が円形を有する。 (1) Configuration of Substrate Inspection Apparatus Hereinafter, a substrate inspection apparatus, a substrate processing apparatus, a substrate inspection method, and a substrate processing method according to an embodiment of the present invention will be described with reference to the drawings. In the following description, the substrate means a semiconductor substrate, a liquid crystal display substrate, a plasma display substrate, an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, a photomask substrate, or the like. In addition, the substrate used in this embodiment has at least a circular outer peripheral portion. For example, the outer peripheral portion excluding the positioning notch has a circular shape.
　図１は、本発明の一実施の形態に係る基板検査装置２００の外観を示す斜視図である。図２は、基板検査装置２００の内部の構成を示す模式的側面図である。図３は、基板検査装置２００の内部の構成を示す模式的平面図である。図１および図２に示すように、基板検査装置２００は、筐体部２１０、投光部２２０、反射部２３０、受光部２４０、回転駆動部２５０、移動部２６０およびノッチ検出部２７０を含む。投光部２２０、反射部２３０および受光部２４０により撮像部１が構成される。撮像部１、回転駆動部２５０、移動部２６０およびノッチ検出部２７０は、筐体部２１０内に収容される。 FIG. 1 is a perspective view showing an appearance of a substrate inspection apparatus 200 according to an embodiment of the present invention. FIG. 2 is a schematic side view showing an internal configuration of the substrate inspection apparatus 200. FIG. 3 is a schematic plan view showing an internal configuration of the substrate inspection apparatus 200. As shown in FIGS. 1 and 2, the substrate inspection apparatus 200 includes a casing unit 210, a light projecting unit 220, a reflecting unit 230, a light receiving unit 240, a rotation driving unit 250, a moving unit 260, and a notch detecting unit 270. The light projecting unit 220, the reflecting unit 230, and the light receiving unit 240 constitute the imaging unit 1. The imaging unit 1, the rotation driving unit 250, the moving unit 260 and the notch detection unit 270 are accommodated in the housing unit 210.
　図１に示すように、筐体部２１０は、略矩形状の底面部２１１および略矩形状の４つの側面部２１２～２１５を含む。側面部２１２，２１４は底面部２１１の長手方向における両端部にそれぞれ位置し、側面部２１３，２１５は底面部２１１の幅方向における両端部にそれぞれ位置する。これにより、筐体部２１０は、略矩形状の上部開口を有する。筐体部２１０は、上部開口を閉塞する上面部をさらに含んでもよい。 As shown in FIG. 1, the casing 210 includes a substantially rectangular bottom surface 211 and four substantially rectangular side surfaces 212 to 215. The side surface portions 212 and 214 are located at both end portions in the longitudinal direction of the bottom surface portion 211, and the side surface portions 213 and 215 are located at both end portions in the width direction of the bottom surface portion 211, respectively. Thereby, the housing | casing part 210 has a substantially rectangular upper opening. The housing part 210 may further include an upper surface part that closes the upper opening.
　以下、底面部２１１の幅方向を単に幅方向と呼び、底面部２１１の長手方向を前後方向と呼ぶ。また、前後方向において、側面部２１４から側面部２１２に向かう方向を前方と定義し、その逆方向を後方と定義する。側面部２１２から側面部２１３の前部に至る部分には、筐体部２１０の外部と内部との間で基板Ｗを搬送するためのスリット状の開口部２１６が形成される。 Hereinafter, the width direction of the bottom surface portion 211 is simply referred to as the width direction, and the longitudinal direction of the bottom surface portion 211 is referred to as the front-rear direction. Further, in the front-rear direction, the direction from the side surface portion 214 toward the side surface portion 212 is defined as the front, and the opposite direction is defined as the rear. A slit-like opening 216 for transporting the substrate W between the outside and the inside of the housing part 210 is formed in a part from the side part 212 to the front part of the side part 213.
　投光部２２０は、例えば１または複数の光源を含み、幅方向に延びるように筐体部２１０の側面部２１３，２１５の内面に取り付けられる。後述するように、開口部２１６から筐体部２１０内に検査対象の基板Ｗが搬入され、投光部２２０の下方を通過する。投光部２２０は、基板Ｗの直径よりも大きい帯状の光を斜め下後方に出射する。 The light projecting unit 220 includes, for example, one or a plurality of light sources, and is attached to the inner surfaces of the side surface portions 213 and 215 of the housing unit 210 so as to extend in the width direction. As will be described later, a substrate W to be inspected is carried into the housing unit 210 from the opening 216 and passes below the light projecting unit 220. The light projecting unit 220 emits strip-shaped light larger than the diameter of the substrate W obliquely downward and rearward.
　反射部２３０は、例えばミラーを含み、投光部２２０よりも後方でかつ幅方向に延びるように筐体部２１０の側面部２１３，２１５の内面に取り付けられる。図２に示すように、投光部２２０により斜め下後方に出射された帯状光は、基板Ｗにより斜め上後方に反射される。反射部２３０は、基板Ｗにより反射された帯状の光を後方から略水平方向に反射する。 The reflection unit 230 includes, for example, a mirror, and is attached to the inner surfaces of the side surface portions 213 and 215 of the housing unit 210 so as to extend behind the light projecting unit 220 and in the width direction. As shown in FIG. 2, the strip-like light emitted obliquely downward and rearward by the light projecting unit 220 is reflected obliquely upward and backward by the substrate W. The reflection unit 230 reflects the strip-shaped light reflected by the substrate W in the substantially horizontal direction from the rear.
　受光部２４０は、反射部２３０よりも後方で筐体部２１０の底面部２１１上に取り付けられる。受光部２４０は、例えばカメラであり、複数のレンズおよびカラーＣＣＤ（電荷結合素子）ラインセンサを含む。受光部２４０は、反射部２３０により反射された帯状の光を受光し、各画素の受光量に対応する画素データに基づいて画像データを生成する。画像データは、複数の画素に対応する複数の画素データにより構成される。 The light receiving part 240 is attached on the bottom part 211 of the casing part 210 behind the reflecting part 230. The light receiving unit 240 is a camera, for example, and includes a plurality of lenses and a color CCD (charge coupled device) line sensor. The light receiving unit 240 receives the band-like light reflected by the reflecting unit 230 and generates image data based on pixel data corresponding to the amount of light received by each pixel. The image data is composed of a plurality of pixel data corresponding to a plurality of pixels.
　図２に示すように、回転駆動部２５０は、例えばスピンチャックであり、駆動装置２５１および回転保持部２５２を含む。駆動装置２５１は、例えば電動モータであり、回転軸２５１ａを有する。駆動装置２５１には、図示しないエンコーダが設けられる。回転保持部２５２は、駆動装置２５１の回転軸２５１ａの先端に取り付けられ、検査対象の基板Ｗを保持した状態で鉛直軸の周りで回転駆動される。 2, the rotation driving unit 250 is, for example, a spin chuck, and includes a driving device 251 and a rotation holding unit 252. The drive device 251 is an electric motor, for example, and has a rotating shaft 251a. The drive device 251 is provided with an encoder (not shown). The rotation holding unit 252 is attached to the tip of the rotation shaft 251a of the driving device 251 and is driven to rotate around the vertical axis while holding the substrate W to be inspected.
　図３に示すように、移動部２６０は、複数（本例では２個）のガイド部材２６１および移動保持部２６２を含む。複数のガイド部材２６１は、幅方向に離間した状態で、平行にかつ前後方向に延びるように筐体部２１０の底面部２１１に取り付けられる。移動保持部２６２は、回転駆動部２５０を保持した状態で、複数のガイド部材２６１に沿って前後方向に移動する。 As shown in FIG. 3, the moving unit 260 includes a plurality of (two in this example) guide members 261 and a moving holding unit 262. The plurality of guide members 261 are attached to the bottom surface portion 211 of the housing portion 210 so as to extend in the front-rear direction in a state of being separated in the width direction. The movement holding unit 262 moves in the front-rear direction along the plurality of guide members 261 while holding the rotation driving unit 250.
　ノッチ検出部２７０は、例えば投光素子および受光素子を含む反射型光電センサであり、筐体部２１０の側面部２１５における内面の前上部に取り付けられる。検査対象の基板Ｗの周縁部がノッチ検出部２７０の下方に位置するときに、ノッチ検出部２７０は、下方に光を出射するとともに基板Ｗからの反射光を受光する。ここで、ノッチ検出部２７０の下方に位置する基板Ｗの部分にノッチが形成されている場合には、ノッチ検出部２７０の受光量が低減する。ノッチ検出部２７０は、回転駆動部２５０により回転される基板Ｗからの受光量に基づいて基板Ｗのノッチの有無を検出する。なお、ノッチ検出部２７０として透過型光電センサが用いられてもよい。 The notch detection unit 270 is a reflective photoelectric sensor including, for example, a light projecting element and a light receiving element, and is attached to the front upper portion of the inner surface of the side surface part 215 of the housing part 210. When the peripheral edge of the substrate W to be inspected is positioned below the notch detector 270, the notch detector 270 emits light downward and receives reflected light from the substrate W. Here, when a notch is formed in the portion of the substrate W located below the notch detection unit 270, the amount of light received by the notch detection unit 270 is reduced. The notch detection unit 270 detects the presence or absence of a notch on the substrate W based on the amount of light received from the substrate W rotated by the rotation driving unit 250. Note that a transmissive photoelectric sensor may be used as the notch detection unit 270.
　（２）基板検査装置の動作
　図４は、基板検査装置２００を制御するためのローカルコントローラ４００の構成を示すブロック図である。図４に示すように、ローカルコントローラ４００は、主制御部４０１、記憶部４０２、撮像制御部４１０、回転制御部４２０、移動制御部４３０、方向判定部４４０および欠陥判定部４５０を含む。 (2) Operation of Substrate Inspection Device FIG. 4 is a block diagram showing a configuration of a local controller 400 for controlling the substrate inspection device 200. As illustrated in FIG. 4, the local controller 400 includes a main control unit 401, a storage unit 402, an imaging control unit 410, a rotation control unit 420, a movement control unit 430, a direction determination unit 440, and a defect determination unit 450.
　主制御部４０１は、例えばＣＰＵ（中央演算処理装置）を含む。記憶部４０２は、例えば不揮発性メモリまたはハードディスクを含み、検査処理を実行するための検査プログラムを記憶する。主制御部４０１が記憶部４０２に記憶された検査プログラムを実行することにより、撮像制御部４１０、回転制御部４２０、移動制御部４３０、方向判定部４４０および欠陥判定部４５０の機能が実現される。 The main control unit 401 includes, for example, a CPU (Central Processing Unit). The storage unit 402 includes, for example, a non-volatile memory or a hard disk, and stores an inspection program for executing an inspection process. The main control unit 401 executes the inspection program stored in the storage unit 402, thereby realizing the functions of the imaging control unit 410, the rotation control unit 420, the movement control unit 430, the direction determination unit 440, and the defect determination unit 450. .
　撮像制御部４１０は、撮像部１の動作を制御する。回転制御部４２０は、回転駆動部２５０の駆動装置２５１（図２）のエンコーダから出力信号を取得して駆動装置２５１の回転角度（基板Ｗの回転角度）を検出するとともに、方向判定部４４０から基板Ｗの向きの判定結果を取得する。また、回転制御部４２０は、駆動装置２５１の回転角度または基板Ｗの向きに基づいて回転駆動部２５０の動作を制御する。移動制御部４３０は、移動部２６０の動作を制御する。 The imaging control unit 410 controls the operation of the imaging unit 1. The rotation control unit 420 acquires an output signal from the encoder of the driving device 251 (FIG. 2) of the rotation driving unit 250 to detect the rotation angle of the driving device 251 (the rotation angle of the substrate W), and from the direction determination unit 440. The determination result of the orientation of the substrate W is acquired. In addition, the rotation control unit 420 controls the operation of the rotation driving unit 250 based on the rotation angle of the driving device 251 or the direction of the substrate W. The movement control unit 430 controls the operation of the moving unit 260.
　方向判定部４４０は、ノッチ検出部２７０の動作を制御する。また、方向判定部４４０は、ノッチ検出部２７０によるノッチの検出結果を取得するとともに、回転制御部４２０により検出された駆動装置２５１の回転角度を取得し、基板Ｗのノッチが検出されたときの駆動装置２５１の回転角度に基づいて基板Ｗの向きを判定する。欠陥判定部４５０は、撮像部１から画像データを取得し、画像データに基づいて基板Ｗの表面状態の欠陥の有無を判定する。欠陥判定部４５０による判定結果は、記憶部４０２に記憶される。 The direction determination unit 440 controls the operation of the notch detection unit 270. In addition, the direction determination unit 440 acquires the detection result of the notch by the notch detection unit 270, acquires the rotation angle of the driving device 251 detected by the rotation control unit 420, and detects when the notch of the substrate W is detected. The orientation of the substrate W is determined based on the rotation angle of the driving device 251. The defect determination unit 450 acquires image data from the imaging unit 1 and determines whether there is a defect in the surface state of the substrate W based on the image data. The determination result by the defect determination unit 450 is stored in the storage unit 402.
　図５および図６は、基板検査装置２００の動作を説明するための図である。図５（ａ），（ｂ）および図６（ａ），（ｂ）においては、左に基板検査装置２００の平面図が示され、右に検査対象の基板Ｗの模式図が示される。本実施の形態においては、現像処理後の基板Ｗが検査される。そのため、図５（ａ）～図６（ｂ）の右に示すように、基板Ｗの表面には、製品となる複数のチップＣＨが形成されている。 5 and 6 are diagrams for explaining the operation of the substrate inspection apparatus 200. FIG. 5A, 5B and 6A, 6B, a plan view of the substrate inspection apparatus 200 is shown on the left, and a schematic diagram of the substrate W to be inspected is shown on the right. In the present embodiment, the substrate W after the development process is inspected. Therefore, as shown on the right side of FIGS. 5A to 6B, a plurality of chips CH to be products are formed on the surface of the substrate W.
　初期状態においては、図５（ａ）に示すように、回転駆動部２５０が筐体部２１０内における前部に位置する。この状態で、基板Ｗの搬送機構（例えば後述する図１３の搬送機構１３７または搬送機構１３８）により検査対象の基板Ｗが開口部２１６を通して筐体部２１０内に搬入され、回転駆動部２５０により保持される。 In the initial state, as shown in FIG. 5A, the rotation drive unit 250 is located at the front part in the housing unit 210. In this state, the substrate W to be inspected is carried into the casing unit 210 through the opening 216 by the substrate W transport mechanism (for example, the transport mechanism 137 or the transport mechanism 138 in FIG. 13 described later) and held by the rotation drive unit 250. Is done.
　ここで、回転駆動部２５０により基板Ｗが１回転されつつノッチ検出部２７０により基板Ｗの周縁部に光が出射され、その反射光がノッチ検出部２７０により受光される。これにより、基板ＷのノッチＮＴが検出される。また、図４の方向判定部４４０により基板Ｗの向きが判定される。その後、基板Ｗが特定の方向を向くように、回転駆動部２５０により基板Ｗが回転される。 Here, light is emitted to the peripheral edge of the substrate W by the notch detection unit 270 while the substrate W is rotated once by the rotation driving unit 250, and the reflected light is received by the notch detection unit 270. Thereby, the notch NT of the substrate W is detected. Further, the direction determination unit 440 in FIG. 4 determines the orientation of the substrate W. Thereafter, the rotation drive unit 250 rotates the substrate W so that the substrate W faces a specific direction.
　次に、図５（ｂ）に白抜きの矢印で示すように、移動部２６０により基板Ｗが後方に移動される。この際に、基板Ｗが投光部２２０の下方を通過することにより、投光部２２０により出射される帯状の光が基板Ｗ上で前後方向に相対的に走査される。これにより、基板Ｗの全体に帯状の光が照射される。基板Ｗから順次反射される帯状の光は、反射部２３０により反射されて受光部２４０に導かれる。これにより、基板Ｗの表面全体の画像を示す第１の画像データが生成される。 Next, as shown by the white arrow in FIG. 5B, the substrate 260 is moved backward by the moving unit 260. At this time, when the substrate W passes below the light projecting unit 220, the strip-shaped light emitted from the light projecting unit 220 is scanned relatively on the substrate W in the front-rear direction. As a result, the entire substrate W is irradiated with the band-like light. The band-like light sequentially reflected from the substrate W is reflected by the reflection unit 230 and guided to the light receiving unit 240. Thereby, first image data indicating an image of the entire surface of the substrate W is generated.
　続いて、図６（ａ）に太い矢印で示すように、回転駆動部２５０により基板Ｗが９０度回転される。その後、図６（ｂ）に白抜きの矢印で示すように、移動部２６０により基板Ｗが前方の初期位置に移動される。この際に、基板Ｗが投光部２２０の下方を再度通過することにより、図５（ｂ）の動作と同様に、基板Ｗの表面全体の画像を示す第２の画像データが生成される。生成された第１および第２のデータに基づいて、図４の欠陥判定部４５０により基板Ｗの欠陥の有無が判定される。欠陥判定部４５０による基板Ｗの欠陥の有無の判定は、任意の時点で行われてもよい。 Subsequently, as indicated by a thick arrow in FIG. 6A, the rotation drive unit 250 rotates the substrate W by 90 degrees. After that, as indicated by a white arrow in FIG. 6B, the substrate 260 is moved to the initial initial position by the moving unit 260. At this time, when the substrate W passes again below the light projecting unit 220, second image data indicating an image of the entire surface of the substrate W is generated in the same manner as the operation of FIG. Based on the generated first and second data, the defect determination unit 450 in FIG. The determination of the presence or absence of a defect on the substrate W by the defect determination unit 450 may be performed at an arbitrary time.
　（３）検査処理
　図７および図８は、検査処理における図４のローカルコントローラ４００の主制御部４０１の動作を示すフローチャートである。図１および図２の基板検査装置２００、図４のローカルコントローラ４００ならびに図７のフローチャートを参照しながら主制御部４０１による検査処理を説明する。 (3) Inspection Process FIGS. 7 and 8 are flowcharts showing the operation of the main controller 401 of the local controller 400 of FIG. 4 in the inspection process. The inspection process by the main control unit 401 will be described with reference to the substrate inspection apparatus 200 of FIGS. 1 and 2, the local controller 400 of FIG. 4, and the flowchart of FIG.
　まず、主制御部４０１は、移動部２６０により回転駆動部２５０を筐体部２１０内の前部における初期位置に移動させる（ステップＳ１）。なお、初期状態において回転駆動部２５０が初期位置にある場合には、ステップＳ１の処理は省略される。ここで、現像処理後の検査対象の基板Ｗが開口部２１６を通して搬送機構により筐体部２１０内に搬入される。主制御部４０１は、搬入された基板Ｗを回転駆動部２５０により保持する（ステップＳ２）。 First, the main control unit 401 causes the moving unit 260 to move the rotation driving unit 250 to the initial position in the front part in the casing unit 210 (step S1). Note that when the rotation drive unit 250 is in the initial position in the initial state, the process of step S1 is omitted. Here, the inspection target substrate W after the development processing is carried into the casing unit 210 through the opening 216 by the transport mechanism. The main control unit 401 holds the loaded substrate W by the rotation driving unit 250 (step S2).
　主制御部４０１は、回転駆動部２５０により、基板Ｗを回転させる（ステップＳ３）とともに、基板Ｗの回転角度を検出する（ステップＳ４）。また、主制御部４０１は、ノッチ検出部２７０により、基板Ｗの周縁部に光を照射するとともに（ステップＳ５）、基板Ｗからの光を受光する（ステップＳ６）。ステップＳ３～Ｓ６の処理はほぼ同時に行われる。 The main control unit 401 rotates the substrate W by the rotation driving unit 250 (step S3) and detects the rotation angle of the substrate W (step S4). Further, the main control unit 401 irradiates the peripheral edge of the substrate W with the notch detection unit 270 (step S5) and receives light from the substrate W (step S6). Steps S3 to S6 are performed almost simultaneously.
　主制御部４０１は、ステップＳ３～Ｓ６の処理の結果に基づいて、ノッチ検出部２７０により基板ＷのノッチＮＴが検出されたか否かを判定する（ステップＳ７）。基板ＷのノッチＮＴが検出された場合には、主制御部４０１は、ノッチＮＴが検出されたときの基板Ｗの回転角度に基づいて基板Ｗの向きを判定する（ステップＳ８）。ステップＳ７において、基板ＷのノッチＮＴが検出されない場合には、ステップＳ９に進む。 The main control unit 401 determines whether or not the notch NT of the substrate W has been detected by the notch detection unit 270 based on the processing results of steps S3 to S6 (step S7). When the notch NT of the substrate W is detected, the main control unit 401 determines the orientation of the substrate W based on the rotation angle of the substrate W when the notch NT is detected (step S8). If the notch NT of the substrate W is not detected in step S7, the process proceeds to step S9.
　ステップＳ９において、主制御部４０１は、基板Ｗが３６０度回転したか否かを判定する（ステップＳ９）。基板Ｗが３６０度回転していない場合には、ステップＳ３に戻り、ステップＳ３～Ｓ８の処理を繰り返す。基板Ｗが３６０度回転した場合には、主制御部４０１は、基板Ｗが特定の方向を向くように回転駆動部２５０により基板Ｗを回転させる（ステップＳ１０）。 In step S9, the main control unit 401 determines whether or not the substrate W has rotated 360 degrees (step S9). If the substrate W has not rotated 360 degrees, the process returns to step S3 and the processes of steps S3 to S8 are repeated. When the substrate W has rotated 360 degrees, the main control unit 401 rotates the substrate W by the rotation driving unit 250 so that the substrate W faces a specific direction (step S10).
　次に、主制御部４０１は、移動部２６０により回転駆動部２５０とともに基板Ｗを後方に移動させる（ステップＳ１１）。ここで、基板Ｗは投光部２２０の下方を通過する。主制御部４０１は、撮像部１により、基板Ｗに帯状の光を照射するとともに（ステップＳ１２）、基板Ｗからの帯状の光を受光する（ステップＳ１３）。ステップＳ１１～Ｓ１３の処理はほぼ同時に行われる。主制御部４０１は、ステップＳ１１～Ｓ１３の処理の結果に基づいて、撮像部１により第１の画像データを生成する（ステップＳ１４）。続いて、主制御部４０１は、回転駆動部２５０により基板Ｗを９０度回転させる（ステップＳ１５）。 Next, the main control unit 401 moves the substrate W together with the rotation driving unit 250 by the moving unit 260 (step S11). Here, the substrate W passes under the light projecting unit 220. The main control unit 401 uses the imaging unit 1 to irradiate the substrate W with strip-shaped light (step S12) and receive the strip-shaped light from the substrate W (step S13). Steps S11 to S13 are performed almost simultaneously. The main control unit 401 generates first image data by the imaging unit 1 based on the results of the processes in steps S11 to S13 (step S14). Subsequently, the main control unit 401 rotates the substrate W by 90 degrees by the rotation driving unit 250 (step S15).
　その後、移動部２６０により回転駆動部２５０とともに基板Ｗを前方（初期位置）に移動させる（ステップＳ１６）。ここで、基板Ｗは投光部２２０の下方を再度通過する。主制御部４０１は、撮像部１により、基板Ｗに帯状の光を照射するとともに（ステップＳ１７）、基板Ｗからの帯状の光を受光する（ステップＳ１８）。ステップＳ１６～Ｓ１８の処理はほぼ同時に行われる。主制御部４０１は、ステップＳ１６～Ｓ１８の処理の結果に基づいて、撮像部１により第２の画像データを生成する（ステップＳ１８）。 Thereafter, the substrate 260 is moved forward (initial position) together with the rotation drive unit 250 by the moving unit 260 (step S16). Here, the substrate W passes again below the light projecting unit 220. The main control unit 401 uses the imaging unit 1 to irradiate the substrate W with strip-shaped light (step S17) and receive the strip-shaped light from the substrate W (step S18). Steps S16 to S18 are performed almost simultaneously. The main control unit 401 generates second image data by the imaging unit 1 based on the processing results of steps S16 to S18 (step S18).
　主制御部４０１は、生成した第１および第２の画像データに基づいて基板Ｗの表面状態の欠陥の有無を判定する（ステップＳ２０）。最後に、主制御部４０１は、基板Ｗの表面状態の欠陥の有無についての判定結果を図４の記憶部４０２に記憶し（ステップＳ２１）、検査処理を終了する。 The main control unit 401 determines the presence / absence of a defect in the surface state of the substrate W based on the generated first and second image data (step S20). Finally, the main control unit 401 stores the determination result about the presence or absence of defects in the surface state of the substrate W in the storage unit 402 of FIG. 4 (step S21), and ends the inspection process.
　（４）基板処理装置
　図９は、図１の基板検査装置２００を備えた基板処理装置１００の模式的平面図である。図９および以降の所定の図には、位置関係を明確にするために互いに直交するＸ方向、Ｙ方向およびＺ方向を示す矢印を付している。Ｘ方向およびＹ方向は水平面内で互いに直交し、Ｚ方向は鉛直方向に相当する。 (4) Substrate Processing Apparatus FIG. 9 is a schematic plan view of a substrate processing apparatus 100 provided with the substrate inspection apparatus 200 of FIG. In FIG. 9 and the following predetermined drawings, arrows indicating X direction, Y direction, and Z direction orthogonal to each other are attached in order to clarify the positional relationship. The X direction and the Y direction are orthogonal to each other in the horizontal plane, and the Z direction corresponds to the vertical direction.
　図９に示すように、基板処理装置１００は、インデクサブロック１１、塗布ブロック１２、現像ブロック１３、洗浄乾燥処理ブロック１４Ａおよび搬入搬出ブロック１４Ｂを備える。洗浄乾燥処理ブロック１４Ａおよび搬入搬出ブロック１４Ｂにより、インターフェイスブロック１４が構成される。搬入搬出ブロック１４Ｂに隣接するように露光装置１５が配置される。 As shown in FIG. 9, the substrate processing apparatus 100 includes an indexer block 11, a coating block 12, a developing block 13, a cleaning / drying processing block 14A, and a loading / unloading block 14B. The cleaning / drying processing block 14A and the carry-in / carry-out block 14B constitute an interface block 14. The exposure device 15 is disposed adjacent to the carry-in / carry-out block 14B.
　インデクサブロック１１は、複数のキャリア載置部１１１および搬送部１１２を含む。各キャリア載置部１１１には、複数の基板Ｗを多段に収納するキャリア１１３が載置される。搬送部１１２には、メインコントローラ１１４および搬送機構１１５が設けられる。メインコントローラ１１４は、基板処理装置１００の種々の構成要素を制御する。搬送機構１１５は、基板Ｗを保持しつつその基板Ｗを搬送する。 The indexer block 11 includes a plurality of carrier placement units 111 and a conveyance unit 112. On each carrier placement section 111, a carrier 113 that houses a plurality of substrates W in multiple stages is placed. The transport unit 112 is provided with a main controller 114 and a transport mechanism 115. The main controller 114 controls various components of the substrate processing apparatus 100. The transport mechanism 115 transports the substrate W while holding the substrate W.
　塗布ブロック１２は、塗布処理部１２１、搬送部１２２および熱処理部１２３を含む。塗布処理部１２１および熱処理部１２３は、搬送部１２２を挟んで対向するように設けられる。搬送部１２２とインデクサブロック１１との間には、基板Ｗが載置される基板載置部ＰＡＳＳ１～ＰＡＳＳ４（図１３参照）が設けられる。搬送部１２２には、基板Ｗを搬送する搬送機構１２７，１２８（図１３参照）が設けられる。 The coating block 12 includes a coating processing unit 121, a transport unit 122, and a heat treatment unit 123. The coating processing unit 121 and the heat treatment unit 123 are provided so as to face each other with the conveyance unit 122 interposed therebetween. Between the transport unit 122 and the indexer block 11, substrate platforms PASS1 to PASS4 (see FIG. 13) on which the substrate W is mounted are provided. The transport unit 122 is provided with transport mechanisms 127 and 128 (see FIG. 13) for transporting the substrate W.
　現像ブロック１３は、現像処理部１３１、搬送部１３２および熱処理部１３３を含む。現像処理部１３１および熱処理部１３３は、搬送部１３２を挟んで対向するように設けられる。搬送部１３２と搬送部１２２との間には、基板Ｗが載置される基板載置部ＰＡＳＳ５～ＰＡＳＳ８（図１３参照）が設けられる。搬送部１３２には、基板Ｗを搬送する搬送機構１３７，１３８（図１３参照）が設けられる。 The development block 13 includes a development processing unit 131, a transport unit 132, and a heat treatment unit 133. The development processing unit 131 and the heat treatment unit 133 are provided to face each other with the transport unit 132 interposed therebetween. Between the transport unit 132 and the transport unit 122, substrate platforms PASS5 to PASS8 (see FIG. 13) on which the substrate W is placed are provided. The transport unit 132 is provided with transport mechanisms 137 and 138 (see FIG. 13) for transporting the substrate W.
　洗浄乾燥処理ブロック１４Ａは、洗浄乾燥処理部１６１，１６２および搬送部１６３を含む。洗浄乾燥処理部１６１，１６２は、搬送部１６３を挟んで対向するように設けられる。搬送部１６３には、搬送機構１４１，１４２が設けられる。 The cleaning / drying processing block 14 </ b> A includes cleaning / drying processing units 161 and 162 and a transport unit 163. The cleaning / drying processing units 161 and 162 are provided to face each other with the conveyance unit 163 interposed therebetween. The transport unit 163 is provided with transport mechanisms 141 and 142.
　搬送部１６３と搬送部１３２との間には、載置兼バッファ部Ｐ－ＢＦ１，Ｐ－ＢＦ２（図１３参照）が設けられる。載置兼バッファ部Ｐ－ＢＦ１，Ｐ－ＢＦ２は、複数の基板Ｗを収容可能に構成される。 Between the transport unit 163 and the transport unit 132, placement / buffer units P-BF1 and P-BF2 (see FIG. 13) are provided. The placement / buffer units P-BF1 and P-BF2 are configured to accommodate a plurality of substrates W.
　また、搬送機構１４１，１４２の間において、搬入搬出ブロック１４Ｂに隣接するように、基板載置部ＰＡＳＳ９および後述の載置兼冷却部Ｐ－ＣＰ（図１３参照）が設けられる。載置兼冷却部Ｐ－ＣＰは、基板Ｗを冷却する機能（例えば、クーリングプレート）を備える。載置兼冷却部Ｐ－ＣＰにおいて、基板Ｗが露光処理に適した温度に冷却される。搬入搬出ブロック１４Ｂには、搬送機構１４３が設けられる。搬送機構１４３は、露光装置１５に対する基板Ｗの搬入および搬出を行う。 Further, a substrate platform PASS9 and a later-described placement / cooling unit P-CP (see FIG. 13) are provided between the transport mechanisms 141 and 142 so as to be adjacent to the carry-in / carry-out block 14B. The placement / cooling unit P-CP has a function of cooling the substrate W (for example, a cooling plate). In the placement / cooling section P-CP, the substrate W is cooled to a temperature suitable for the exposure process. A transport mechanism 143 is provided in the carry-in / carry-out block 14B. The transport mechanism 143 carries the substrate W into and out of the exposure apparatus 15.
　（５）塗布処理部および現像処理部
　図１０は、図９の塗布処理部１２１、現像処理部１３１および洗浄乾燥処理部１６１の内部構成を示す模式的側面図である。図１０に示すように、塗布処理部１２１には、塗布処理室２１，２２，２３，２４が階層的に設けられる。各塗布処理室２１～２４には、塗布処理ユニット１２９が設けられる。現像処理部１３１には、現像処理室３１，３２，３３，３４が階層的に設けられる。各現像処理室３１～３４には、現像処理ユニット１３９が設けられる。 (5) Application Processing Unit and Development Processing Unit FIG. 10 is a schematic side view showing the internal configuration of the application processing unit 121, the development processing unit 131, and the cleaning / drying processing unit 161 in FIG. As shown in FIG. 10, the coating processing section 121 is provided with coating processing chambers 21, 22, 23, and 24 in a hierarchical manner. In each of the coating processing chambers 21 to 24, a coating processing unit 129 is provided. The development processing unit 131 is provided with development processing chambers 31, 32, 33, and 34 in a hierarchical manner. In each of the development processing chambers 31 to 34, a development processing unit 139 is provided.
　図１１は、塗布処理ユニット１２９の構成を示す平面図である。図１０および図１１に示すように、各塗布処理ユニット１２９は、待機部２０、複数のスピンチャック２５、複数のカップ２７、複数の処理液ノズル２８、ノズル搬送機構２９および複数のエッジリンスノズル３０を備える。本実施の形態においては、スピンチャック２５、カップ２７およびエッジリンスノズル３０は、各塗布処理ユニット１２９に２つずつ設けられる。 FIG. 11 is a plan view showing the configuration of the coating processing unit 129. As shown in FIGS. 10 and 11, each coating processing unit 129 includes a standby unit 20, a plurality of spin chucks 25, a plurality of cups 27, a plurality of processing liquid nozzles 28, a nozzle transport mechanism 29, and a plurality of edge rinse nozzles 30. Is provided. In the present embodiment, two spin chucks 25, cups 27, and edge rinse nozzles 30 are provided in each coating processing unit 129.
　各スピンチャック２５は、基板Ｗを保持した状態で、図示しない駆動装置（例えば、電動モータ）により回転駆動される。カップ２７はスピンチャック２５の周囲を取り囲むように設けられる。各処理液ノズル２８には、図示しない処理液貯留部から処理液配管を通して種々の処理液が供給される。基板Ｗに処理液が供給されない待機時には、各処理液ノズル２８は待機部２０に挿入される。基板Ｗへの処理液の供給時には、待機部２０のいずれかの処理液ノズル２８がノズル搬送機構２９により保持され、基板Ｗの上方に搬送される。 Each spin chuck 25 is rotationally driven by a driving device (not shown) (for example, an electric motor) while holding the substrate W. The cup 27 is provided so as to surround the periphery of the spin chuck 25. Various processing liquids are supplied to each processing liquid nozzle 28 from a processing liquid storage unit (not shown) through processing liquid piping. At the time when the processing liquid is not supplied to the substrate W, each processing liquid nozzle 28 is inserted into the standby unit 20. When supplying the processing liquid to the substrate W, any of the processing liquid nozzles 28 of the standby unit 20 is held by the nozzle transport mechanism 29 and transported above the substrate W.
　スピンチャック２５が回転しつつ処理液ノズル２８から処理液が吐出されることにより、回転する基板Ｗ上に処理液が塗布される。本実施の形態においては、図１０の塗布処理室２２，２４の塗布処理ユニット１２９において、反射防止膜用の処理液（以下、反射防止液と呼ぶ。）が処理液ノズル２８から基板Ｗに供給される。塗布処理室２１，２３の塗布処理ユニット１２９において、レジスト膜用の処理液（以下、レジスト液と呼ぶ。）が処理液ノズル２８から基板Ｗに供給される。 The processing liquid is applied onto the rotating substrate W by discharging the processing liquid from the processing liquid nozzle 28 while the spin chuck 25 rotates. In the present embodiment, in the coating processing unit 129 in the coating processing chambers 22 and 24 of FIG. 10, a processing liquid for antireflection film (hereinafter referred to as antireflection liquid) is supplied from the processing liquid nozzle 28 to the substrate W. Is done. In the coating processing units 129 in the coating processing chambers 21 and 23, a resist film processing liquid (hereinafter referred to as a resist liquid) is supplied from the processing liquid nozzle 28 to the substrate W.
　エッジリンスノズル３０が所定の待機位置から基板Ｗの周縁部の近傍に移動される。ここで、基板Ｗの周縁部とは、基板Ｗの表面において基板Ｗの外周部に沿った一定幅の領域をいう。スピンチャック２５が回転しつつエッジリンスノズル３０から回転する基板Ｗの周縁部に向けてリンス液が吐出されることにより、基板Ｗに塗布された処理液の周縁部が溶解される。それにより、基板Ｗの周縁部の処理液が除去される。 The edge rinse nozzle 30 is moved from the predetermined standby position to the vicinity of the peripheral edge of the substrate W. Here, the peripheral portion of the substrate W refers to a region having a constant width along the outer peripheral portion of the substrate W on the surface of the substrate W. The rinse liquid is discharged from the edge rinse nozzle 30 toward the peripheral edge of the rotating substrate W while the spin chuck 25 rotates, so that the peripheral edge of the processing liquid applied to the substrate W is dissolved. Thereby, the processing liquid at the peripheral edge of the substrate W is removed.
　図１０に示すように、現像処理ユニット１３９は、塗布処理ユニット１２９と同様に、複数のスピンチャック３５および複数のカップ３７を備える。また、図９に示すように、現像処理ユニット１３９は、現像液を吐出する２つのスリットノズル３８およびそれらのスリットノズル３８をＸ方向に移動させる移動機構３９を備える。現像処理ユニット１３９においては、図示しない駆動装置によりスピンチャック３５が回転される。それにより、基板Ｗが回転される。スリットノズル３８が移動しつつ回転する各基板Ｗに現像液を供給する。これにより、基板Ｗの現像処理が行われる。 As shown in FIG. 10, the development processing unit 139 includes a plurality of spin chucks 35 and a plurality of cups 37, similar to the coating processing unit 129. As shown in FIG. 9, the development processing unit 139 includes two slit nozzles 38 that discharge the developer and a moving mechanism 39 that moves the slit nozzles 38 in the X direction. In the development processing unit 139, the spin chuck 35 is rotated by a driving device (not shown). Thereby, the substrate W is rotated. The developer is supplied to each substrate W that rotates while the slit nozzle 38 moves. Thereby, the development processing of the substrate W is performed.
　洗浄乾燥処理部１６１には、複数（本例では４つ）の洗浄乾燥処理ユニットＳＤ１が設けられる。洗浄乾燥処理ユニットＳＤ１においては、露光処理前の基板Ｗの洗浄および乾燥処理が行われる。 The cleaning / drying processing unit 161 is provided with a plurality (four in this example) of cleaning / drying processing units SD1. In the cleaning / drying processing unit SD1, the substrate W before the exposure processing is cleaned and dried.
　（６）熱処理部
　図１２は、図９の熱処理部１２３，１３３および洗浄乾燥処理部１６２の内部構成を示す模式的側面図である。図１２に示すように、熱処理部１２３は、上方に設けられる上段熱処理部１０１および下方に設けられる下段熱処理部１０２を有する。上段熱処理部１０１および下段熱処理部１０２には、複数の熱処理ユニットＰＨＰ、複数の密着強化処理ユニットＰＡＨＰおよび複数の冷却ユニットＣＰが設けられる。 (6) Heat Treatment Unit FIG. 12 is a schematic side view showing the internal configuration of the heat treatment units 123 and 133 and the cleaning / drying processing unit 162 of FIG. As shown in FIG. 12, the heat treatment part 123 has an upper heat treatment part 101 provided above and a lower heat treatment part 102 provided below. The upper heat treatment unit 101 and the lower heat treatment unit 102 are provided with a plurality of heat treatment units PHP, a plurality of adhesion reinforcement processing units PAHP, and a plurality of cooling units CP.
　熱処理部１２３の最上部には、ローカルコントローラ３００が設けられる。ローカルコントローラ３００は、図９のメインコントローラ１１４からの指令に基づいて、塗布処理部１２１、搬送部１２２および熱処理部１２３の動作を制御する。 The local controller 300 is provided at the top of the heat treatment unit 123. The local controller 300 controls operations of the coating processing unit 121, the transport unit 122, and the heat treatment unit 123 based on a command from the main controller 114 in FIG.
　熱処理ユニットＰＨＰにおいては、基板Ｗの加熱処理および冷却処理が行われる。密着強化処理ユニットＰＡＨＰにおいては、基板Ｗと反射防止膜との密着性を向上させるための密着強化処理が行われる。具体的には、密着強化処理ユニットＰＡＨＰにおいて、基板ＷにＨＭＤＳ（ヘキサメチルジシラサン）等の密着強化剤が塗布されるとともに、基板Ｗに加熱処理が行われる。冷却ユニットＣＰにおいては、基板Ｗの冷却処理が行われる。 In the heat treatment unit PHP, the substrate W is heated and cooled. In the adhesion reinforcement processing unit PAHP, adhesion reinforcement processing for improving the adhesion between the substrate W and the antireflection film is performed. Specifically, in the adhesion reinforcement processing unit PAHP, an adhesion enhancing agent such as HMDS (hexamethyldisilazane) is applied to the substrate W, and the substrate W is subjected to heat treatment. In the cooling unit CP, the substrate W is cooled.
　熱処理部１３３は、上方に設けられる上段熱処理部１０３および下方に設けられる下段熱処理部１０４を有する。上段熱処理部１０３および下段熱処理部１０４には、冷却ユニットＣＰ、複数の熱処理ユニットＰＨＰ、エッジ露光部ＥＥＷおよび基板検査装置２００が設けられる。上段熱処理部１０３および下段熱処理部１０４の熱処理ユニットＰＨＰは、洗浄乾燥処理ブロック１４Ａからの基板Ｗの搬入が可能に構成される。 The heat treatment part 133 includes an upper heat treatment part 103 provided above and a lower heat treatment part 104 provided below. The upper heat treatment unit 103 and the lower heat treatment unit 104 are provided with a cooling unit CP, a plurality of heat treatment units PHP, an edge exposure unit EEW, and a substrate inspection apparatus 200. The thermal processing units PHP of the upper thermal processing unit 103 and the lower thermal processing unit 104 are configured to be able to carry in the substrate W from the cleaning / drying processing block 14A.
　熱処理部１３３の最上部には、図４のローカルコントローラ４００が設けられる。ローカルコントローラ４００は、図９のメインコントローラ１１４からの指令に基づいて、基板検査装置２００の動作を制御するとともに、現像処理部１３１、搬送部１３２および熱処理部１３３の動作を制御する。 4 is provided at the top of the heat treatment unit 133. The local controller 400 controls the operations of the substrate inspection apparatus 200 and the operations of the development processing unit 131, the transport unit 132, and the heat treatment unit 133 based on a command from the main controller 114 in FIG. 9.
　エッジ露光部ＥＥＷにおいては、基板Ｗの周縁部の露光処理（エッジ露光処理）が行われる。基板Ｗにエッジ露光処理が行われることにより、後の現像処理時に、基板Ｗの周縁部上のレジスト膜が除去される。それにより、現像処理後において、基板Ｗの周縁部が他の部分と接触した場合に、基板Ｗの周縁部上のレジスト膜が剥離してパーティクルとなることが防止される。基板検査装置２００においては、現像処理後の基板Ｗの表面状態が検査される。 In the edge exposure unit EEW, exposure processing (edge exposure processing) of the peripheral portion of the substrate W is performed. By performing the edge exposure process on the substrate W, the resist film on the peripheral edge of the substrate W is removed during the subsequent development process. This prevents the resist film on the peripheral portion of the substrate W from peeling off and becoming particles when the peripheral portion of the substrate W comes into contact with another portion after the development processing. In the substrate inspection apparatus 200, the surface state of the substrate W after the development processing is inspected.
　洗浄乾燥処理部１６２には、複数（本例では５つ）の洗浄乾燥処理ユニットＳＤ２が設けられる。洗浄乾燥処理ユニットＳＤ２においては、露光処理後の基板Ｗの洗浄および乾燥処理が行われる。 The cleaning / drying processing section 162 is provided with a plurality (five in this example) of cleaning / drying processing units SD2. In the cleaning / drying processing unit SD2, the substrate W after the exposure processing is cleaned and dried.
　（７）搬送部
　図１３は、搬送部１２２，１３２，１６３の内部構成を示す模式的側面図である。図１３に示すように、搬送部１２２は、上段搬送室１２５および下段搬送室１２６を有する。搬送部１３２は、上段搬送室１３５および下段搬送室１３６を有する。上段搬送室１２５には搬送機構１２７が設けられ、下段搬送室１２６には搬送機構１２８が設けられる。また、上段搬送室１３５には搬送機構１３７が設けられ、下段搬送室１３６には搬送機構１３８が設けられる。 (7) Conveying Unit FIG. 13 is a schematic side view showing the internal configuration of the conveying units 122, 132, and 163. As shown in FIG. 13, the transfer unit 122 includes an upper transfer chamber 125 and a lower transfer chamber 126. The transfer unit 132 includes an upper transfer chamber 135 and a lower transfer chamber 136. The upper transfer chamber 125 is provided with a transfer mechanism 127, and the lower transfer chamber 126 is provided with a transfer mechanism 128. The upper transfer chamber 135 is provided with a transfer mechanism 137, and the lower transfer chamber 136 is provided with a transfer mechanism 138.
　塗布処理室２１，２２（図１０）と上段熱処理部１０１（図１２）とは上段搬送室１２５を挟んで対向し、塗布処理室２３，２４（図１０）と下段熱処理部１０２（図１２）とは下段搬送室１２６を挟んで対向する。現像処理室３１，３２（図１０）と上段熱処理部１０３（図１２）とは上段搬送室１３５を挟んで対向し、現像処理室３３，３４（図１０）と下段熱処理部１０４（図１２）とは下段搬送室１３６を挟んで対向する。 The coating processing chambers 21 and 22 (FIG. 10) and the upper thermal processing section 101 (FIG. 12) face each other with the upper transport chamber 125 interposed therebetween, and the coating processing chambers 23 and 24 (FIG. 10) and the lower thermal processing section 102 (FIG. 12). Is opposed to the lower transfer chamber 126. The development processing chambers 31 and 32 (FIG. 10) and the upper thermal processing section 103 (FIG. 12) face each other with the upper transport chamber 135 interposed therebetween, and the development processing chambers 33 and 34 (FIG. 10) and the lower thermal processing section 104 (FIG. 12). Is opposed to the lower transfer chamber 136.
　搬送部１１２と上段搬送室１２５との間には、基板載置部ＰＡＳＳ１，ＰＡＳＳ２が設けられ、搬送部１１２と下段搬送室１２６との間には、基板載置部ＰＡＳＳ３，ＰＡＳＳ４が設けられる。上段搬送室１２５と上段搬送室１３５との間には、基板載置部ＰＡＳＳ５，ＰＡＳＳ６が設けられ、下段搬送室１２６と下段搬送室１３６との間には、基板載置部ＰＡＳＳ７，ＰＡＳＳ８が設けられる。 Substrate platforms PASS 1 and PASS 2 are provided between the transport unit 112 and the upper transport chamber 125, and substrate platforms PASS 3 and PASS 4 are provided between the transport unit 112 and the lower transport chamber 126. Substrate platforms PASS5 and PASS6 are provided between the upper transport chamber 125 and the upper transport chamber 135, and substrate platforms PASS7 and PASS8 are provided between the lower transport chamber 126 and the lower transport chamber 136. It is done.
　上段搬送室１３５と搬送部１６３との間には、載置兼バッファ部Ｐ－ＢＦ１が設けられ、下段搬送室１３６と搬送部１６３との間には載置兼バッファ部Ｐ－ＢＦ２が設けられる。搬送部１６３において搬入搬出ブロック１４Ｂと隣接するように、基板載置部ＰＡＳＳ９および複数の載置兼冷却部Ｐ－ＣＰが設けられる。 A placement / buffer unit P-BF1 is provided between the upper transfer chamber 135 and the transfer unit 163, and a placement / buffer unit P-BF2 is provided between the lower transfer chamber 136 and the transfer unit 163. . A substrate platform PASS9 and a plurality of placement / cooling units P-CP are provided so as to be adjacent to the carry-in / carry-out block 14B in the transport unit 163.
　載置兼バッファ部Ｐ－ＢＦ１は、搬送機構１３７および搬送機構１４１（図９）による基板Ｗの搬入および搬出が可能に構成される。載置兼バッファ部Ｐ－ＢＦ２は、搬送機構１３８および搬送機構１４１（図９）による基板Ｗの搬入および搬出が可能に構成される。また、基板載置部ＰＡＳＳ９および載置兼冷却部Ｐ－ＣＰは、搬送機構１４１，１４２（図９）および搬送機構１４３による基板Ｗの搬入および搬出が可能に構成される。 The placement / buffer unit P-BF1 is configured such that the substrate W can be loaded and unloaded by the transport mechanism 137 and the transport mechanism 141 (FIG. 9). The placement / buffer unit P-BF2 is configured such that the substrate W can be carried in and out by the transport mechanism 138 and the transport mechanism 141 (FIG. 9). Further, the substrate platform PASS9 and the placement / cooling unit P-CP are configured such that the substrate W can be carried in and out by the transport mechanisms 141 and 142 (FIG. 9) and the transport mechanism 143.
　基板載置部ＰＡＳＳ１および基板載置部ＰＡＳＳ３には、インデクサブロック１１から塗布ブロック１２へ搬送される基板Ｗが載置され、基板載置部ＰＡＳＳ２および基板載置部ＰＡＳＳ４には、塗布ブロック１２からインデクサブロック１１へ搬送される基板Ｗが載置される。 The substrate W to be transported from the indexer block 11 to the coating block 12 is placed on the substrate platform PASS1 and the substrate platform PASS3, and the coating block 12 is placed on the substrate platform PASS2 and the substrate platform PASS4. A substrate W to be transported to the indexer block 11 is placed.
　基板載置部ＰＡＳＳ５および基板載置部ＰＡＳＳ７には、塗布ブロック１２から現像ブロック１３へ搬送される基板Ｗが載置され、基板載置部ＰＡＳＳ６および基板載置部ＰＡＳＳ８には、現像ブロック１３から塗布ブロック１２へ搬送される基板Ｗが載置される。 A substrate W transported from the coating block 12 to the development block 13 is placed on the substrate platform PASS5 and the substrate platform PASS7, and from the development block 13 on the substrate platform PASS6 and the substrate platform PASS8. A substrate W to be transported to the coating block 12 is placed.
　載置兼バッファ部Ｐ－ＢＦ１，Ｐ－ＢＦ２には、現像ブロック１３から洗浄乾燥処理ブロック１４Ａへ搬送される基板Ｗが載置される。載置兼冷却部Ｐ－ＣＰには、洗浄乾燥処理ブロック１４Ａから搬入搬出ブロック１４Ｂへ搬送される基板Ｗが載置される。基板載置部ＰＡＳＳ９には、搬入搬出ブロック１４Ｂから洗浄乾燥処理ブロック１４Ａへ搬送される基板Ｗが載置される。 On the placement / buffer units P-BF1 and P-BF2, the substrate W transported from the development block 13 to the cleaning / drying processing block 14A is placed. The substrate W to be transported from the cleaning / drying processing block 14A to the loading / unloading block 14B is placed on the placement / cooling section P-CP. The substrate W to be transported from the carry-in / carry-out block 14B to the cleaning / drying processing block 14A is placed on the substrate platform PASS9.
　搬送機構１２７は、塗布処理室２１，２２（図１０）、基板載置部ＰＡＳＳ１，ＰＡＳＳ２，ＰＡＳＳ５，ＰＡＳＳ６および上段熱処理部１０１（図１２）に対して基板Ｗの受け渡しを行う。搬送機構１２８は、塗布処理室２３，２４（図１０）、基板載置部ＰＡＳＳ３，ＰＡＳＳ４，ＰＡＳＳ７，ＰＡＳＳ８および下段熱処理部１０２（図１２）に対して基板Ｗの受け渡しを行う。 The transport mechanism 127 delivers the substrate W to the coating processing chambers 21 and 22 (FIG. 10), the substrate platforms PASS1, PASS2, PASS5, PASS6 and the upper thermal processing unit 101 (FIG. 12). The transport mechanism 128 delivers the substrate W to the coating processing chambers 23 and 24 (FIG. 10), the substrate platforms PASS3, PASS4, PASS7 and PASS8, and the lower thermal processing unit 102 (FIG. 12).
　搬送機構１３７は、現像処理室３１，３２（図１０）、基板載置部ＰＡＳＳ５，ＰＡＳＳ６、載置兼バッファ部Ｐ－ＢＦ１および上段熱処理部１０３（図１２）に対して基板Ｗの受け渡しを行う。搬送機構１３８は、現像処理室３３，３４（図１０）、基板載置部ＰＡＳＳ７，ＰＡＳＳ８、載置兼バッファ部Ｐ－ＢＦ２および下段熱処理部１０４（図１２）に対して基板Ｗの受け渡しを行う。 The transport mechanism 137 delivers the substrate W to the development processing chambers 31 and 32 (FIG. 10), the substrate platforms PASS5 and PASS6, the placement / buffer unit P-BF1, and the upper thermal processing unit 103 (FIG. 12). . The transport mechanism 138 delivers the substrate W to the development processing chambers 33 and 34 (FIG. 10), the substrate platforms PASS7 and PASS8, the placement / buffer unit P-BF2, and the lower thermal processing unit 104 (FIG. 12). .
　（８）基板処理
　図９、図１０、図１２および図１３を参照しながら基板処理を説明する。インデクサブロック１１のキャリア載置部１１１（図９）には、未処理の基板Ｗが収容されたキャリア１１３が載置される。搬送機構１１５は、キャリア１１３から基板載置部ＰＡＳＳ１，ＰＡＳＳ３（図１３）に未処理の基板Ｗを搬送する。また、搬送機構１１５は、基板載置部ＰＡＳＳ２，ＰＡＳＳ４（図１３）に載置された処理済みの基板Ｗをキャリア１１３に搬送する。 (8) Substrate Processing The substrate processing will be described with reference to FIGS. 9, 10, 12, and 13. A carrier 113 in which an unprocessed substrate W is accommodated is placed on the carrier placement portion 111 (FIG. 9) of the indexer block 11. The transport mechanism 115 transports the unprocessed substrate W from the carrier 113 to the substrate platforms PASS1 and PASS3 (FIG. 13). Further, the transport mechanism 115 transports the processed substrate W placed on the substrate platforms PASS2 and PASS4 (FIG. 13) to the carrier 113.
　塗布ブロック１２において、搬送機構１２７（図１３）は、基板載置部ＰＡＳＳ１に載置された未処理の基板Ｗを密着強化処理ユニットＰＡＨＰ（図１２）、冷却ユニットＣＰ（図１２）および塗布処理室２２（図１０）に順に搬送する。次に、搬送機構１２７は、塗布処理室２２の基板Ｗを、熱処理ユニットＰＨＰ（図１２）、冷却ユニットＣＰ（図１２）、塗布処理室２１（図１０）、熱処理ユニットＰＨＰ（図１２）および基板載置部ＰＡＳＳ５（図１３）に順に搬送する。 In the coating block 12, the transport mechanism 127 (FIG. 13) applies the unprocessed substrate W placed on the substrate platform PASS1 to the adhesion strengthening processing unit PAHP (FIG. 12), the cooling unit CP (FIG. 12), and the coating process. It conveys to chamber 22 (FIG. 10) in order. Next, the transport mechanism 127 transfers the substrate W in the coating treatment chamber 22 to the heat treatment unit PHP (FIG. 12), the cooling unit CP (FIG. 12), the coating treatment chamber 21 (FIG. 10), the heat treatment unit PHP (FIG. 12), and The substrate is sequentially transferred to the substrate platform PASS5 (FIG. 13).
　この場合、密着強化処理ユニットＰＡＨＰにおいて、基板Ｗに密着強化処理が行われた後、冷却ユニットＣＰにおいて、反射防止膜の形成に適した温度に基板Ｗが冷却される。次に、塗布処理室２２において、塗布処理ユニット１２９（図１０）により基板Ｗ上に反射防止膜が形成される。続いて、熱処理ユニットＰＨＰにおいて、基板Ｗの熱処理が行われた後、冷却ユニットＣＰにおいて、レジスト膜の形成に適した温度に基板Ｗが冷却される。次に、塗布処理室２１において、塗布処理ユニット１２９（図１０）により、基板Ｗ上にレジスト膜が形成される。その後、熱処理ユニットＰＨＰにおいて、基板Ｗの熱処理が行われ、その基板Ｗが基板載置部ＰＡＳＳ５に載置される。 In this case, after the adhesion strengthening process is performed on the substrate W in the adhesion reinforcement processing unit PAHP, the cooling unit CP cools the substrate W to a temperature suitable for forming the antireflection film. Next, in the coating processing chamber 22, an antireflection film is formed on the substrate W by the coating processing unit 129 (FIG. 10). Subsequently, after the heat treatment of the substrate W is performed in the heat treatment unit PHP, the substrate W is cooled to a temperature suitable for formation of the resist film in the cooling unit CP. Next, in the coating processing chamber 21, a resist film is formed on the substrate W by the coating processing unit 129 (FIG. 10). Thereafter, the substrate W is heat-treated in the heat treatment unit PHP, and the substrate W is placed on the substrate platform PASS5.
　また、搬送機構１２７は、基板載置部ＰＡＳＳ６（図１３）に載置された現像処理および検査処理後の基板Ｗを基板載置部ＰＡＳＳ２（図１３）に搬送する。 Further, the transport mechanism 127 transports the substrate W after the development process and the inspection process placed on the substrate platform PASS6 (FIG. 13) to the substrate platform PASS2 (FIG. 13).
　搬送機構１２８（図１３）は、基板載置部ＰＡＳＳ３に載置された未処理の基板Ｗを密着強化処理ユニットＰＡＨＰ（図１２）、冷却ユニットＣＰ（図１２）および塗布処理室２４（図１０）に順に搬送する。次に、搬送機構１２８は、塗布処理室２４の基板Ｗを、熱処理ユニットＰＨＰ（図１２）、冷却ユニットＣＰ（図１２）、塗布処理室２３（図１０）、熱処理ユニットＰＨＰ（図１２）および基板載置部ＰＡＳＳ７（図１３）に順に搬送する。 The transport mechanism 128 (FIG. 13) applies the unprocessed substrate W placed on the substrate platform PASS3 to the adhesion reinforcement processing unit PAHP (FIG. 12), the cooling unit CP (FIG. 12), and the coating processing chamber 24 (FIG. 10). ) In order. Next, the transport mechanism 128 transfers the substrate W in the coating processing chamber 24 to the thermal processing unit PHP (FIG. 12), the cooling unit CP (FIG. 12), the coating processing chamber 23 (FIG. 10), the thermal processing unit PHP (FIG. 12), and The substrate is sequentially transferred to the substrate platform PASS7 (FIG. 13).
　また、搬送機構１２８（図１３）は、基板載置部ＰＡＳＳ８（図１３）に載置された現像処理および検査処理後の基板Ｗを基板載置部ＰＡＳＳ４（図１３）に搬送する。塗布処理室２３，２４（図１０）および下段熱処理部１０２（図１２）における基板Ｗの処理内容は、上記の塗布処理室２１，２２（図１０）および上段熱処理部１０１（図１２）における基板Ｗの処理内容とそれぞれ同様である。 Further, the transport mechanism 128 (FIG. 13) transports the substrate W after the development process and the inspection process placed on the substrate platform PASS8 (FIG. 13) to the substrate platform PASS4 (FIG. 13). The processing contents of the substrate W in the coating processing chambers 23 and 24 (FIG. 10) and the lower thermal processing section 102 (FIG. 12) are the same as those in the coating processing chambers 21 and 22 (FIG. 10) and the upper thermal processing section 101 (FIG. 12). The processing contents of W are the same.
　現像ブロック１３において、搬送機構１３７（図１３）は、基板載置部ＰＡＳＳ５に載置されたレジスト膜形成後の基板Ｗをエッジ露光部ＥＥＷ（図１２）および載置兼バッファ部Ｐ－ＢＦ１（図１３）に順に搬送する。この場合、エッジ露光部ＥＥＷにおいて、基板Ｗにエッジ露光処理が行われる。エッジ露光処理後の基板Ｗが載置兼バッファ部Ｐ－ＢＦ１に載置される。 In the developing block 13, the transport mechanism 137 (FIG. 13) transfers the substrate W after the resist film formation placed on the substrate platform PASS5 to the edge exposure unit EEW (FIG. 12) and the placement / buffer unit P-BF1 ( It conveys in order to FIG. In this case, the edge exposure processing is performed on the substrate W in the edge exposure unit EEW. The substrate W after the edge exposure processing is placed on the placement / buffer unit P-BF1.
　また、搬送機構１３７（図１３）は、洗浄乾燥処理ブロック１４Ａに隣接する熱処理ユニットＰＨＰ（図１２）から露光処理後でかつ熱処理後の基板Ｗを取り出す。搬送機構１３７は、その基板Ｗを冷却ユニットＣＰ（図１２）、現像処理室３１，３２（図１０）のいずれか一方、熱処理ユニットＰＨＰ（図１２）、基板検査装置２００（図１２）および基板載置部ＰＡＳＳ６（図１３）に順に搬送する。 Further, the transport mechanism 137 (FIG. 13) takes out the substrate W after the exposure processing and after the heat treatment from the heat treatment unit PHP (FIG. 12) adjacent to the cleaning / drying processing block 14A. The transport mechanism 137 uses the cooling unit CP (FIG. 12), the development processing chambers 31 and 32 (FIG. 10), the heat treatment unit PHP (FIG. 12), the substrate inspection apparatus 200 (FIG. 12), and the substrate. It conveys to mounting part PASS6 (FIG. 13) in order.
　この場合、冷却ユニットＣＰにおいて、現像処理に適した温度に基板Ｗが冷却された後、現像処理室３１，３２のいずれか一方において、現像処理ユニット１３９により基板Ｗの現像処理が行われる。その後、熱処理ユニットＰＨＰにおいて、基板Ｗの熱処理が行われる。また、基板検査装置２００において、基板Ｗの検査処理が行われ、その基板Ｗが基板載置部ＰＡＳＳ６に載置される。 In this case, after the substrate W is cooled to a temperature suitable for the developing process in the cooling unit CP, the developing process of the substrate W is performed by the developing unit 139 in one of the developing chambers 31 and 32. Thereafter, the heat treatment of the substrate W is performed in the heat treatment unit PHP. Further, the substrate inspection apparatus 200 performs an inspection process on the substrate W, and the substrate W is placed on the substrate platform PASS6.
　搬送機構１３８（図１３）は、基板載置部ＰＡＳＳ７に載置されたレジスト膜形成後の基板Ｗをエッジ露光部ＥＥＷ（図１２）および載置兼バッファ部Ｐ－ＢＦ２（図１３）に順に搬送する。 The transport mechanism 138 (FIG. 13) sequentially transfers the resist film-formed substrate W placed on the substrate platform PASS7 to the edge exposure unit EEW (FIG. 12) and the placement / buffer unit P-BF2 (FIG. 13). Transport.
　また、搬送機構１３８（図１３）は、インターフェイスブロック１４に隣接する熱処理ユニットＰＨＰ（図１２）から露光処理後でかつ熱処理後の基板Ｗを取り出す。搬送機構１３８は、その基板Ｗを冷却ユニットＣＰ（図１２）、現像処理室３３，３４（図１０）のいずれか一方、熱処理ユニットＰＨＰ（図１２）、基板検査装置２００（図１２）および基板載置部ＰＡＳＳ８（図１３）に順に搬送する。現像処理室３３，３４および下段熱処理部１０４における基板Ｗの処理内容は、上記の現像処理室３１，３２および上段熱処理部１０３における基板Ｗの処理内容とそれぞれ同様である。 Further, the transport mechanism 138 (FIG. 13) takes out the substrate W after the exposure process and after the heat treatment from the heat treatment unit PHP (FIG. 12) adjacent to the interface block 14. The transport mechanism 138 transfers the substrate W to the cooling unit CP (FIG. 12), one of the development processing chambers 33 and 34 (FIG. 10), the heat treatment unit PHP (FIG. 12), the substrate inspection apparatus 200 (FIG. 12), and the substrate. It conveys in order to mounting part PASS8 (FIG. 13). The processing contents of the substrate W in the development processing chambers 33 and 34 and the lower thermal processing section 104 are the same as the processing contents of the substrate W in the development processing chambers 31 and 32 and the upper thermal processing section 103, respectively.
　洗浄乾燥処理ブロック１４Ａにおいて、搬送機構１４１（図９）は、載置兼バッファ部Ｐ－ＢＦ１，Ｐ－ＢＦ２（図１３）に載置された基板Ｗを洗浄乾燥処理ユニットＳＤ１（図１０）および載置兼冷却部Ｐ－ＣＰ（図１３）に順に搬送する。この場合、洗浄乾燥処理ユニットＳＤ１において基板Ｗの洗浄および乾燥処理が行われた後、載置兼冷却部Ｐ－ＣＰにおいて露光装置１５（図９）による露光処理に適した温度に基板Ｗが冷却される。 In the cleaning / drying processing block 14A, the transport mechanism 141 (FIG. 9) performs the cleaning / drying processing unit SD1 (FIG. 10) and the substrate W placed on the placement / buffer units P-BF1, P-BF2 (FIG. 13) and It is sequentially conveyed to the placement / cooling section P-CP (FIG. 13). In this case, after cleaning and drying processing of the substrate W is performed in the cleaning / drying processing unit SD1, the substrate W is cooled to a temperature suitable for the exposure processing by the exposure device 15 (FIG. 9) in the placement / cooling unit P-CP. Is done.
　搬送機構１４２（図９）は、基板載置部ＰＡＳＳ９（図１３）に載置された露光処理後の基板Ｗを洗浄乾燥処理ユニットＳＤ２（図１２）および上段熱処理部１０３または下段熱処理部１０４の熱処理ユニットＰＨＰ（図１２）に順に搬送する。この場合、洗浄乾燥処理ユニットＳＤ２において基板Ｗの洗浄および乾燥処理が行われた後、熱処理ユニットＰＨＰにおいて露光後ベーク（ＰＥＢ）処理が行われる。 The transport mechanism 142 (FIG. 9) performs cleaning and drying processing unit SD2 (FIG. 12) and the upper thermal processing unit 103 or the lower thermal processing unit 104 on the substrate W after the exposure processing placed on the substrate platform PASS9 (FIG. 13). It conveys to heat processing unit PHP (FIG. 12) in order. In this case, after the substrate W is cleaned and dried in the cleaning / drying processing unit SD2, a post-exposure bake (PEB) process is performed in the heat treatment unit PHP.
　搬入搬出ブロック１４Ｂにおいて、搬送機構１４３（図９）は、載置兼冷却部Ｐ－ＣＰ（図１３）に載置された露光処理前の基板Ｗを露光装置１５に搬送する。また、搬送機構１４３（図９）は、露光装置１５から露光処理後の基板Ｗを取り出し、その基板Ｗを基板載置部ＰＡＳＳ９（図１３）に搬送する。 In the carry-in / carry-out block 14B, the transport mechanism 143 (FIG. 9) transports the substrate W before the exposure process placed on the placement / cooling unit P-CP (FIG. 13) to the exposure apparatus 15. Further, the transport mechanism 143 (FIG. 9) takes out the substrate W after the exposure processing from the exposure apparatus 15, and transports the substrate W to the substrate platform PASS9 (FIG. 13).
　（９）効果
　本実施の形態に係る基板検査装置２００においては、回転保持部２５２により保持された基板Ｗが撮像部１により撮像されることにより第１の画像データが生成される。その後に、回転保持部２５２により予め定められた角度だけ基板Ｗが回転される。基板Ｗの回転後、回転保持部２５２により保持された基板Ｗが撮像部１により撮像されることにより第２の画像データが生成される。第１および第２の画像データに基づいて、基板Ｗの表面状態の欠陥の有無が判定される。 (9) Effect In the substrate inspection apparatus 200 according to the present embodiment, first image data is generated by imaging the substrate W held by the rotation holding unit 252 by the imaging unit 1. Thereafter, the substrate W is rotated by a predetermined angle by the rotation holding unit 252. After the rotation of the substrate W, the substrate W held by the rotation holding unit 252 is imaged by the imaging unit 1, whereby second image data is generated. Based on the first and second image data, the presence / absence of a defect in the surface state of the substrate W is determined.
　この構成によれば、第１の画像データにより示される基板Ｗの表面と、第２の画像データにより示される基板Ｗの表面とでは、光沢等の態様が異なる。そのため、基板Ｗの表面に欠陥が存在する場合には、第１および第２の画像データの少なくとも一方により示される画像に当該欠陥が鮮明に現れる可能性が向上する。これにより、基板Ｗの表面状態の欠陥を高い精度で検出することが可能になる。また、検査は複数の基板Ｗの向きが揃った状態で行われるので、複数の基板Ｗを画一的に検査することができる。 According to this configuration, the surface of the substrate W indicated by the first image data and the surface of the substrate W indicated by the second image data have different aspects such as gloss. Therefore, when a defect exists on the surface of the substrate W, the possibility that the defect appears clearly in an image indicated by at least one of the first and second image data is improved. Thereby, it becomes possible to detect the surface state defect of the substrate W with high accuracy. In addition, since the inspection is performed in a state where the directions of the plurality of substrates W are aligned, the plurality of substrates W can be inspected uniformly.
　また、本実施の形態においては、移動部２６０により基板Ｗと撮像部１とが前後方向に相対的に往復移動することにより第１および第２の撮像データが生成される。さらに、小型の撮像部１を用いて基板Ｗの一面の全体を撮像することができる。これにより、第１および第２の撮像データを短時間で得ることができるとともに、基板検査装置２００をコンパクトにすることができる。 In the present embodiment, the moving unit 260 causes the substrate W and the imaging unit 1 to reciprocate relative to each other in the front-rear direction to generate first and second imaging data. Further, the entire surface of the substrate W can be imaged using the small imaging unit 1. Thus, the first and second imaging data can be obtained in a short time, and the substrate inspection apparatus 200 can be made compact.
　（１０）他の実施の形態
　（ａ）上記実施の形態において、検査処理は現像処理後に行われるが、本発明はこれに限定されない。検査処理は、例えばエッジ露光処理の前または後に行われてもよいし、他の時点で行われてもよい。 (10) Other Embodiments (a) In the above embodiment, the inspection process is performed after the development process, but the present invention is not limited to this. The inspection process may be performed before or after the edge exposure process, for example, or may be performed at another time.
　（ｂ）上記実施の形態において、ステップＳ１５の処理における基板Ｗの回転角度は９０度であるが、本発明はこれに限定されない。基板Ｗの回転角度は、所望の角度であってもよい。この場合において、基板Ｗの回転角度は、１８０度の整数倍の角度以外の角度であることが好ましく、９０度の奇数倍の角度であることがより好ましい。 (B) In the above embodiment, the rotation angle of the substrate W in the process of step S15 is 90 degrees, but the present invention is not limited to this. The rotation angle of the substrate W may be a desired angle. In this case, the rotation angle of the substrate W is preferably an angle other than an integer multiple of 180 degrees, and more preferably an odd multiple of 90 degrees.
　この場合、第１の画像データにより示される基板Ｗの表面の態様と、第２の画像データにより示される基板Ｗの表面の態様とが大きく異なる。これにより、基板Ｗの表面に欠陥が存在する場合に、第１または第２の画像データにより示される画像に当該欠陥が鮮明に現れる可能性をより向上させることができる。 In this case, the aspect of the surface of the substrate W indicated by the first image data is greatly different from the aspect of the surface of the substrate W indicated by the second image data. Thereby, when the defect exists in the surface of the board | substrate W, the possibility that the said defect appears clearly in the image shown by the 1st or 2nd image data can be improved more.
　（ｃ）上記実施の形態において、ステップＳ１０で基板Ｗが特定の方向を向くように基板Ｗが回転されるが、本発明はこれに限定されない。基板Ｗが特定の方向を向いた状態で基板検査装置２００に搬入されるように基板処理装置１００が構成される場合には、ステップＳ３～Ｓ１０の処理が省略されてもよく、基板検査装置２００にノッチ検出部２７０が設けられなくてもよい。同様に、基板Ｗが任意の方向を向いた状態で検査処理が行われてもよい場合には、ステップＳ３～Ｓ１０の処理が省略されてもよく、基板検査装置２００にノッチ検出部２７０が設けられなくてもよい。 (C) In the above embodiment, the substrate W is rotated so that the substrate W faces a specific direction in step S10, but the present invention is not limited to this. When the substrate processing apparatus 100 is configured such that the substrate W is carried into the substrate inspection apparatus 200 in a state where the substrate W is directed in a specific direction, the processing of steps S3 to S10 may be omitted, and the substrate inspection apparatus 200 is omitted. The notch detector 270 may not be provided. Similarly, when the inspection process may be performed with the substrate W facing in an arbitrary direction, the processes in steps S3 to S10 may be omitted, and the substrate inspection apparatus 200 is provided with a notch detection unit 270. It does not have to be done.
　（ｄ）上記実施の形態において、撮像部１の投光部２２０および受光部２４０は別体として構成されるが、本発明はこれに限定されない。撮像部１の投光部２２０および受光部２４０は一体的に構成されてもよい。 (D) In the above embodiment, the light projecting unit 220 and the light receiving unit 240 of the imaging unit 1 are configured as separate bodies, but the present invention is not limited to this. The light projecting unit 220 and the light receiving unit 240 of the imaging unit 1 may be configured integrally.
　（ｅ）上記実施の形態において、撮像部１に反射部２３０が設けられるが、本発明はこれに限定されない。受光部２４０が基板Ｗからの帯状の光を直接受光するように構成される場合には、撮像部１に反射部２３０が設けられなくてもよい。 (E) In the above embodiment, the imaging unit 1 is provided with the reflection unit 230, but the present invention is not limited to this. When the light receiving unit 240 is configured to directly receive the band-shaped light from the substrate W, the imaging unit 1 may not be provided with the reflecting unit 230.
　（ｆ）上記実施の形態において、移動部２６０は、撮像部１に対して回転駆動部２５０（基板Ｗ）を前後方向に移動させるように構成されるが、本発明はこれに限定されない。移動部２６０は、撮像部１と回転駆動部２５０とを相対的に前後方向に移動させるように構成されてもよい。したがって、移動部２６０は、回転駆動部２５０に対して撮像部１を前後方向に移動させるように構成されてもよい。 (F) In the above embodiment, the moving unit 260 is configured to move the rotation driving unit 250 (substrate W) in the front-rear direction with respect to the imaging unit 1, but the present invention is not limited to this. The moving unit 260 may be configured to relatively move the imaging unit 1 and the rotation driving unit 250 in the front-rear direction. Therefore, the moving unit 260 may be configured to move the imaging unit 1 in the front-rear direction with respect to the rotation driving unit 250.
　（ｇ）上記実施の形態において、撮像部１と回転駆動部２５０とが相対的に移動されるが、本発明はこれに限定されない。撮像部１の撮像領域が基板Ｗの表面全体よりも大きい場合には、撮像部１と回転駆動部２５０とが相対的に移動されなくてもよく、基板検査装置２００に移動部２６０が設けられなくてもよい。 (G) In the above embodiment, the imaging unit 1 and the rotation drive unit 250 are relatively moved, but the present invention is not limited to this. When the imaging area of the imaging unit 1 is larger than the entire surface of the substrate W, the imaging unit 1 and the rotation driving unit 250 do not have to be moved relatively, and the substrate inspection apparatus 200 is provided with the moving unit 260. It does not have to be.
　（ｈ）上記実施の形態において、基板検査装置２００は基板処理装置１００の熱処理部１３３に設けられるが、本発明はこれに限定されない。基板検査装置２００は、基板処理装置１００の塗布ブロック１２等の他の部位に設けられてもよい。あるいは、基板検査装置２００は、基板処理装置１００に設けられず、基板に検査処理を行うために単体で設けられてもよい。 (H) In the above embodiment, the substrate inspection apparatus 200 is provided in the heat treatment section 133 of the substrate processing apparatus 100, but the present invention is not limited to this. The substrate inspection apparatus 200 may be provided in other parts such as the coating block 12 of the substrate processing apparatus 100. Alternatively, the substrate inspection apparatus 200 may not be provided in the substrate processing apparatus 100 but may be provided alone for performing an inspection process on the substrate.
　（１１）請求項の各構成要素と実施の形態の各要素との対応関係
　以下、請求項の各構成要素と実施の形態の各要素との対応の例について説明するが、本発明は下記の例に限定されない。 (11) Correspondence relationship between each constituent element of claim and each element of the embodiment Hereinafter, an example of correspondence between each constituent element of the claim and each element of the embodiment will be described. It is not limited to examples.
　上記の実施の形態では、基板Ｗが基板の例であり、回転保持部２５２が回転保持部の例であり、撮像部１が撮像部の例であり、撮像制御部４１０が第１および第２の撮像制御部の例である。回転制御部４２０が第１～第３の回転制御部の例であり、欠陥判定部４５０が判定部の例であり、基板検査装置２００が基板検査装置の例であり、投光部２２０が投光部の例であり、受光部２４０が受光部の例である。 In the above embodiment, the substrate W is an example of a substrate, the rotation holding unit 252 is an example of a rotation holding unit, the imaging unit 1 is an example of an imaging unit, and the imaging control unit 410 is the first and second. This is an example of the imaging control unit. The rotation control unit 420 is an example of first to third rotation control units, the defect determination unit 450 is an example of a determination unit, the substrate inspection device 200 is an example of a substrate inspection device, and the light projecting unit 220 is a projector. It is an example of a light part, and the light-receiving part 240 is an example of a light-receiving part.
　移動部２６０が相対移動部の例であり、移動制御部４３０が第１および第２の移動制御部の例であり、移動保持部２６２が移動保持部の例であり、方向判定部４４０が方向判定部の例である。ノッチ検出部２７０がノッチ検出部の例であり、塗布処理ユニット１２９が膜形成部の例であり、搬送機構１２７，１２８，１３７，１３８が搬送機構の例であり、基板処理装置１００が基板処理装置の例である。 The movement unit 260 is an example of a relative movement unit, the movement control unit 430 is an example of first and second movement control units, the movement holding unit 262 is an example of a movement holding unit, and the direction determination unit 440 is a direction. It is an example of a determination part. The notch detection unit 270 is an example of a notch detection unit, the coating processing unit 129 is an example of a film forming unit, the transfer mechanisms 127, 128, 137, and 138 are examples of transfer mechanisms, and the substrate processing apparatus 100 is a substrate processing unit. It is an example of an apparatus.
　請求項の各構成要素として、請求項に記載されている構成または機能を有する他の種々の要素を用いることもできる。 As the constituent elements of the claims, various other elements having configurations or functions described in the claims can be used.
　本発明は、種々の基板の表面の検査に有効に利用することができる。 The present invention can be effectively used for inspection of the surface of various substrates.

Claims (11)

  1. 基板を回転可能に保持する回転保持部と、
    　前記回転保持部により保持された基板を撮像するように設けられた撮像部と、
    　第１の撮像時に、基板の画像を示す第１の画像データを生成するように前記撮像部を制御する第１の撮像制御部と、
    　前記第１の撮像後に、予め定められた角度だけ基板を回転させるように前記回転保持部を制御する第１の回転制御部と、
    　前記第１の回転制御部による基板の回転後の第２の撮像時に、基板の画像を示す第２の画像データを生成するように前記撮像部を制御する第２の撮像制御部と、
    　前記第１および第２の画像データに基づいて、基板の表面状態の欠陥の有無を判定する判定部とを備える、基板検査装置。     A rotation holding unit for holding the substrate rotatably;
    An imaging unit provided to image the substrate held by the rotation holding unit;
    A first imaging control unit that controls the imaging unit so as to generate first image data indicating an image of the substrate during the first imaging;
    A first rotation control unit that controls the rotation holding unit to rotate the substrate by a predetermined angle after the first imaging;
    A second imaging control unit that controls the imaging unit to generate second image data indicating an image of the substrate at the time of the second imaging after the rotation of the substrate by the first rotation control unit;
    A substrate inspection apparatus comprising: a determination unit that determines presence or absence of a defect in a surface state of the substrate based on the first and second image data.
  2. 前記撮像部は、
    　第１の方向において基板の直径よりも長く延びる光を出射する投光部と、
    　基板からの反射光を受光し、受光量に基づいて前記第１または第２の画像データを生成する受光部とを含み、
    　前記基板検査装置は、
    　前記投光部からの光が基板の一面の全体に照射されるように、前記第１の方向に交差する第２の方向、または前記第２の方向とは逆の第３の方向に前記撮像部と前記回転保持部とを相対的に移動可能に設けられた相対移動部と、
    　前記第１の撮像時に、前記撮像部と前記回転保持部とを前記第２の方向に相対的に移動させるように前記相対移動部を制御する第１の移動制御部と、
    　前記第２の撮像時に、前記撮像部と前記回転保持部とを前記第３の方向に相対的に移動させるように前記相対移動部を制御する第２の移動制御部とをさらに備える、請求項１記載の基板検査装置。     The imaging unit
    A light projecting portion that emits light that extends longer than the diameter of the substrate in the first direction;
    A light receiving unit that receives reflected light from the substrate and generates the first or second image data based on the amount of light received;
    The substrate inspection apparatus includes:
    The imaging is performed in a second direction intersecting the first direction or in a third direction opposite to the second direction so that light from the light projecting unit is irradiated on the entire surface of the substrate. A relative movement part provided to be relatively movable between the part and the rotation holding part;
    A first movement control unit that controls the relative movement unit so as to relatively move the imaging unit and the rotation holding unit in the second direction during the first imaging;
    The apparatus further comprises a second movement control unit that controls the relative movement unit so as to relatively move the imaging unit and the rotation holding unit in the third direction during the second imaging. 1. The substrate inspection apparatus according to 1.
  3. 前記相対移動部は、前記回転保持部を保持しかつ前記撮像部に対して前記回転保持部を前記第２または第３の方向に移動させる移動保持部を含む、請求項２記載の基板検査装置。 The substrate inspection apparatus according to claim 2, wherein the relative movement unit includes a movement holding unit that holds the rotation holding unit and moves the rotation holding unit in the second or third direction with respect to the imaging unit. .
  4. 前記投光部と前記受光部とは別体として配置される、請求項２または３記載の基板検査装置。 The substrate inspection apparatus according to claim 2, wherein the light projecting unit and the light receiving unit are arranged separately.
  5. 前記回転保持部により保持された基板の向きを判定する方向判定部と、
    　前記方向判定部により判定された基板の向きに基づいて、前記第１の撮像前に基板が特定の方向を向くように前記回転保持部を制御する第２の回転制御部とをさらに備える、請求項１～４のいずれか一項に記載の基板検査装置。     A direction determination unit that determines the orientation of the substrate held by the rotation holding unit;
    And a second rotation control unit configured to control the rotation holding unit so that the substrate faces a specific direction before the first imaging based on the orientation of the substrate determined by the direction determination unit. Item 5. The substrate inspection apparatus according to any one of Items 1 to 4.
  6. 前記第２の回転制御部による基板の回転の前に、基板が少なくとも１回転するように前記回転保持部を制御する第３の回転制御部と、
    　前記第３の回転制御部により回転される基板のノッチを検出するノッチ検出部とをさらに備え、
    　前記方向判定部は、前記ノッチ検出部により基板のノッチが検出されたときの基板の回転角度に基づいて基板の向きを判定する、請求項５記載の基板検査装置。     A third rotation control unit that controls the rotation holding unit so that the substrate rotates at least once before the rotation of the substrate by the second rotation control unit;
    A notch detection unit for detecting a notch of the substrate rotated by the third rotation control unit,
    The substrate inspection apparatus according to claim 5, wherein the direction determination unit determines the orientation of the substrate based on a rotation angle of the substrate when the notch detection unit detects a notch of the substrate.
  7. 前記第１の回転制御部は、前記第１の撮像時における基板の向きと前記第２の撮像時における基板の向きとが非平行となるように前記回転保持部を制御する、請求項１～６のいずれか一項に記載の基板検査装置。 The first rotation control unit controls the rotation holding unit so that the orientation of the substrate during the first imaging and the orientation of the substrate during the second imaging are non-parallel. The board inspection apparatus according to any one of claims 6 to 6.
  8. 前記予め定められた角度は９０度の奇数倍の角度である、請求項１～７のいずれか一項に記載の基板検査装置。 The substrate inspection apparatus according to any one of claims 1 to 7, wherein the predetermined angle is an odd multiple of 90 degrees.
  9. 塗布液を基板の表面に供給することにより表面に塗布膜を形成する膜形成部と、
    　前記膜形成部により塗布膜が形成された基板の表面状態を検査する請求項１～８のいずれか一項に記載の基板検査装置と、
    　前記膜形成部と前記基板検査装置との間で基板を搬送する搬送機構とを備える、基板処理装置。     A film forming section for forming a coating film on the surface by supplying a coating liquid to the surface of the substrate;
    The substrate inspection apparatus according to any one of claims 1 to 8, wherein the substrate state on which the coating film is formed by the film forming unit is inspected.
    A substrate processing apparatus comprising: a transport mechanism that transports a substrate between the film forming unit and the substrate inspection apparatus.
  10. 回転保持部により基板を回転可能に保持するステップと、
    　第１の撮像時に、前記回転保持部により保持された基板を撮像することにより基板の画像を示す第１の画像データを生成するステップと、
    　前記第１の撮像後に、前記回転保持部により予め定められた角度だけ基板を回転させるステップと、
    　基板の回転後の第２の撮像時に、前記回転保持部により保持された基板を撮像することにより基板の画像を示す第２の画像データを生成するステップと、
    　前記第１および第２の画像データに基づいて、基板の表面状態の欠陥の有無を判定するステップとを含む、基板検査方法。     Holding the substrate rotatably by the rotation holding unit;
    Generating first image data indicating an image of the substrate by imaging the substrate held by the rotation holding unit during the first imaging;
    After the first imaging, rotating the substrate by a predetermined angle by the rotation holding unit;
    Generating second image data indicating an image of the substrate by imaging the substrate held by the rotation holding unit during the second imaging after the rotation of the substrate;
    Determining the presence or absence of defects in the surface state of the substrate based on the first and second image data.
  11. 膜形成部により塗布液を基板の表面に供給することにより表面に塗布膜を形成するステップと、
    　前記膜形成部により表面に塗布膜が形成された基板を搬送機構により搬送するステップと、
    　前記搬送機構により搬送された基板の表面状態を検査する請求項１０記載のステップとを含む、基板処理方法。     Forming a coating film on the surface by supplying a coating liquid to the surface of the substrate by the film forming unit;
    Transporting the substrate having the coating film formed on the surface by the film forming unit by a transport mechanism;
    A substrate processing method comprising: inspecting a surface state of a substrate transported by the transport mechanism.
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