JP6788089B2 - Substrate processing method, substrate processing equipment and computer-readable recording medium - Google Patents

Description

The present disclosure relates to a substrate processing method, a substrate processing apparatus, and a computer-readable recording medium.

At present, in manufacturing a semiconductor device by microfabrication of a substrate (for example, a semiconductor wafer), it is widely and generally used to form an uneven pattern (for example, a resist pattern) on the substrate by using a photolithography technique. The steps of forming a resist pattern on a semiconductor wafer include, for example, a resist film forming process for forming a resist film (coating film) on the surface of the wafer, an exposure process for exposing the resist film along a predetermined pattern, and exposure. It includes a development process in which the resist film and the developing solution are reacted with each other for development.

In the resist film forming treatment, a spin coating method is generally adopted in which a resist liquid is dropped onto the surface of a wafer while rotating the wafer. Therefore, a resist film is usually formed on the entire surface of the wafer. However, when such a wafer W is conveyed by the transfer arm, the resist film adheres to the transfer arm when the transfer arm grips the peripheral edge of the wafer W. In this case, the residue of the resist film adhering to the transport arm may contaminate the subsequent wafer. Therefore, a peripheral edge removing process for removing the resist film existing in the peripheral edge region of the wafer may be performed.

In Patent Document 1, as an example of the peripheral edge removing process, after forming a resist film on the surface of the wafer, a portion of the resist film (solidified film) located in the peripheral region of the wafer (peripheral portion of the resist film) while rotating the wafer. ), A method of removing the peripheral edge of the resist film along the peripheral edge of the wafer (edge rinsing treatment) is disclosed. In Patent Document 2, as another example of the peripheral edge removing process, after forming a resist film on the surface of the wafer, the peripheral edge region of the wafer is exposed and developed with a predetermined width from the peripheral edge of the wafer inward. Discloses a method of removing the peripheral edge of a resist film along the peripheral edge of a wafer (peripheral exposure development processing).

Japanese Unexamined Patent Publication No. 11-333355 JP-A-2002-158166

By the way, since the wafer is manufactured through various steps, the wafer may have a warp from the beginning (before microfabrication is performed). When forming a resist film on the surface of a wafer, the wafer is heat-treated and cooled after the resist solution is applied to the surface of the wafer. Therefore, the wafer may warp as heat flows in and out of the wafer. Especially in recent years, the development of 3D NAND flash memory has been promoted. Since the memory is manufactured through a number of resist film forming steps, the wafer is repeatedly heat-treated and cooled. Therefore, the warp generated in the wafer can be extremely large, for example, about several hundred μm to 1 mm.

When the wafer has a warp, the height position of the peripheral edge of the wafer may fluctuate as the wafer rotates during processing of the wafer. Therefore, when the edge rinsing treatment is performed on the peripheral edge of the wafer, the separation distance between the peripheral edge and the organic solvent supply nozzle may vary. Similarly, when peripheral exposure development processing is performed on the peripheral edge of the wafer, the optical path length to the peripheral edge may fluctuate. Therefore, when the peripheral edge removing process (edge rinsing process, peripheral exposure development process, etc.) is performed on the warped wafer, the removal width of the peripheral edge portion of the resist film becomes non-uniform along the peripheral edge of the wafer, which is a desired setting. Inconveniences such as less than the range or exceeding the set range may occur. In particular, in recent years, there has been a demand for further miniaturization of uneven patterns and higher integration of circuits formed on wafers. Therefore, if there is a portion of the peripheral portion of the resist film having a large removal width, high integration of the circuit on the substrate is hindered.

Therefore, the present disclosure describes a substrate processing method, a substrate processing apparatus, and a computer-readable recording medium capable of appropriately processing the peripheral edge of the substrate even when the substrate has a warp.

The substrate processing method according to one aspect of the present disclosure includes a first step of imaging the end face of the reference substrate with a camera over the entire periphery of the reference substrate whose amount of warpage is known, and an imaging obtained in the first step. The second step of image-processing the image to acquire the shape data of the end face of the reference substrate over the entire periphery of the reference substrate, and the third step of capturing the end face of the substrate to be processed over the entire circumference of the periphery of the substrate to be processed by a camera. In the fourth step and the second step, the captured image obtained in the third step is image-processed and the shape data of the end face of the substrate to be processed is acquired over the entire periphery of the substrate to be processed. The fifth step of calculating the amount of warpage of the substrate to be processed based on the acquired shape data and the shape data acquired in the fourth step, and the coating liquid are supplied to the surface of the substrate to be processed to form a coating film. The sixth step of forming and the supply position of the organic solvent with respect to the peripheral edge of the coating film are determined based on the amount of warpage calculated in the fifth step, and the peripheral edge is determined by the organic solvent supplied from the supply position. It includes a seventh step of melting and removing from the substrate to be processed.

In the substrate processing method according to one aspect of the present disclosure, the amount of warpage of the substrate to be processed is calculated in the fifth step, and in the seventh step, the supply position of the organic solvent with respect to the peripheral edge of the coating film is set to the amount of warpage. It is determined based on the above, and the peripheral portion is melted by the organic solvent supplied from the supply position and removed from the substrate to be processed. Therefore, the supply position of the organic solvent with respect to the peripheral edge portion of the coating film is appropriately determined according to the warp of the substrate to be treated, so that the removal width of the peripheral edge portion can be made more uniform. Therefore, even when the substrate to be processed has a warp, appropriate treatment can be performed on the peripheral edge of the substrate to be processed. In addition, since the circuit can be formed on a region closer to the peripheral edge of the surface of the substrate to be processed, high integration of the circuit on the substrate to be processed is promoted, and the substrate to be processed can be used more efficiently. It becomes possible to do.

In the substrate processing method according to one aspect of the present disclosure, after the seventh step, the coating film located in the peripheral region of the surface of the substrate to be processed is exposed with a predetermined exposure width over the entire circumference of the peripheral edge of the substrate to be processed. In the peripheral exposure step, the exposure width may be determined based on the amount of warpage calculated in the fifth step. In this case, since the exposure width is appropriately determined according to the warp of the substrate to be processed, it is possible to make the exposure width of the peripheral portion more uniform. Therefore, by developing the substrate to be processed after the peripheral exposure step, it is possible to make the removal width of the peripheral portion more uniform.

The substrate processing method according to one aspect of the present disclosure includes an eighth step of heating the coating film after the seventh step, and after the eighth step, the end face of the substrate to be treated over the entire periphery of the substrate to be treated. 9th step of imaging the image with a camera, and a 10th step of performing image processing on the captured image obtained in the 9th step and acquiring shape data of the end face of the substrate to be processed over the entire periphery of the substrate to be processed. The eleventh step of calculating the amount of warpage of the substrate to be processed based on the shape data acquired in the second step and the shape data acquired in the tenth step is further included in the eleventh step. When the calculated warp amount is larger than a predetermined threshold value, the substrate to be processed does not need to be exposed. In this case, the substrate to be processed that is difficult to be exposed by the exposure machine can be determined in advance, and the substrate to be processed can be excluded from the exposure processing. Therefore, it is possible to improve the processing efficiency of the substrate to be processed.

The substrate processing method according to one aspect of the present disclosure includes an eighth step of heating the coating film after the seventh step, and after the eighth step, the end face of the substrate to be treated over the entire periphery of the substrate to be treated. 9th step of imaging the image with a camera, and a 10th step of performing image processing on the captured image obtained in the 9th step and acquiring shape data of the end face of the substrate to be processed over the entire periphery of the substrate to be processed. After the eleventh step and the ninth step of calculating the warp amount of the substrate to be processed based on the shape data acquired in the second step and the shape data acquired in the tenth step, the object to be processed The peripheral exposure step of exposing the coating film located in the peripheral region of the surface of the treated substrate with a predetermined exposure width over the entire circumference of the peripheral edge of the substrate to be processed is further included, and in the peripheral exposure step, the exposure width is set to the eleventh step. It may be determined based on the amount of warpage calculated in. In this case, since the exposure width is more appropriately determined according to the warp of the substrate to be processed after the heat treatment is performed in the eighth step, it is possible to make the exposure width of the peripheral portion more uniform. Become. Therefore, by developing the substrate to be processed after the peripheral exposure step, it is possible to make the removal width of the peripheral portion even more uniform.

When the amount of warpage calculated in the eleventh step is larger than a predetermined threshold value, it is not necessary to perform the exposure treatment on the substrate to be processed. In this case, the substrate to be processed that is difficult to be exposed by the exposure machine can be determined in advance, and the substrate to be processed can be excluded from the exposure processing. Therefore, it is possible to improve the processing efficiency of the substrate to be processed.

The substrate processing method according to another aspect of the present disclosure includes a first step of imaging the end face of the reference substrate with a camera over the entire circumference of the peripheral edge of the reference substrate whose amount of warpage is known, and an imaging obtained in the first step. The second step of image-processing the image to acquire the shape data of the end face of the reference substrate over the entire periphery of the reference substrate, and the third step of capturing the end face of the substrate to be processed over the entire circumference of the periphery of the substrate to be processed by a camera. In the fourth step and the second step, the captured image obtained in the third step is image-processed and the shape data of the end face of the substrate to be processed is acquired over the entire periphery of the substrate to be processed. The fifth step of calculating the amount of warpage of the substrate to be processed based on the acquired shape data and the shape data acquired in the fourth step, and the coating liquid are supplied to the surface of the substrate to be processed to form a coating film. The peripheral exposure step includes a sixth step of forming and a peripheral exposure step of exposing a coating film located in a peripheral region of the surface of the substrate to be processed with a predetermined exposure width over the entire circumference of the peripheral edge of the substrate to be processed. , The exposed width is determined based on the amount of warpage calculated in the fifth step.

In the substrate processing method according to another aspect of the present disclosure, the warp amount of the substrate to be processed is calculated in the fifth step, and the exposure width is determined based on the warp amount in the peripheral exposure step. Therefore, since the exposure width is appropriately determined according to the warp of the substrate to be processed, it is possible to make the exposure width of the peripheral portion more uniform. Therefore, by developing the substrate to be processed after the peripheral exposure step, it is possible to make the removal width of the peripheral portion more uniform. As a result, even when the substrate to be processed has a warp, appropriate treatment can be performed on the peripheral edge of the substrate to be processed. In addition, since the circuit can be formed on a region closer to the peripheral edge of the surface of the substrate to be processed, high integration of the circuit on the substrate to be processed is promoted, and the substrate to be processed can be used more efficiently. It becomes possible to do.

The substrate processing method according to another aspect of the present disclosure further comprises a seventh step of heating the coating film after the sixth step, and the third to fifth steps are performed after the seventh step. May be good. In this case, since the exposure width is more appropriately determined according to the warp of the substrate to be processed after the heat treatment is performed in the seventh step, it is possible to make the exposure width of the peripheral portion more uniform. Become. Therefore, by developing the substrate to be processed after the peripheral exposure step, it is possible to make the removal width of the peripheral portion even more uniform.

When the amount of warpage calculated in the fifth step is larger than a predetermined threshold value, it is not necessary to perform the exposure treatment on the substrate to be processed. In this case, the substrate to be processed that is difficult to be exposed by the exposure machine can be determined in advance, and the substrate to be processed can be excluded from the exposure processing. Therefore, it is possible to improve the processing efficiency of the substrate to be processed.

The reference substrate is flat, the shape data acquired in the second step is the data of the first profile line passing through the center of the end face of the reference substrate, and the shape data acquired in the fourth step is the cover. It is the data of the second profile line passing through the center of the end face of the processed substrate, and in the fifth step, the amount of warpage of the substrate to be processed is determined based on the data of the first profile line and the data of the second profile line. You may calculate. In this case, the amount of warpage of the substrate to be processed can be calculated more easily from the data of the first and second profile lines.

The substrate processing method according to one aspect of the present disclosure includes an imaging step of the peripheral surface in which the peripheral region of the surface of the substrate to be processed is imaged by a camera, and an image processing of the captured image captured in the fourth step. In addition to inspecting the state of the end face of the processed substrate, an inspection step of inspecting the state of the peripheral region of the surface of the substrate to be processed by image processing the captured image captured in the image pickup step of the peripheral surface may be further included. .. In this case, defects (for example, cracks, chips, scratches, etc.) in the vicinity of the peripheral edge of the substrate to be processed can be discriminated, and the substrate to be processed can be excluded from various treatments. Therefore, it is possible to improve the processing efficiency of the substrate to be processed.

The substrate processing apparatus according to another aspect of the present disclosure includes a coating liquid supply unit configured to supply a coating liquid to the surface of the substrate to be treated, and first and second organic solvents on the surface of the substrate to be treated. The control unit includes a solvent supply unit configured to supply, a first rotation holding unit configured to hold and rotate the substrate to be processed, at least one camera, and a control unit. The first process of capturing the end face of the reference substrate with at least one camera over the entire circumference of the periphery of the reference substrate whose amount of warpage is known, and the image processing of the captured image obtained by the first process are performed to perform image processing on the reference substrate. A second process of acquiring the shape data of the end face over the entire periphery of the reference substrate, a third process of capturing the end face of the substrate to be processed over the entire circumference of the periphery of the substrate to be processed by at least one camera, and a third process. The fourth process of performing image processing on the captured image obtained by the process and acquiring the shape data of the end face of the substrate to be processed over the entire periphery of the peripheral edge of the substrate to be processed, and the shape data and the second process acquired by the second process. The fifth process of calculating the amount of warpage of the substrate to be processed based on the shape data acquired in the process of 4, and the substrate to be processed during rotation by controlling the coating liquid supply unit and the first rotation holding unit. The sixth treatment of forming the coating film by supplying the coating liquid to the surface of the coating film, and the control of the solvent supply portion and the first rotation holding portion to set the supply position of the organic solvent with respect to the peripheral portion of the coating film to the fifth. The seventh process, which is determined based on the warp amount calculated in the above process, dissolves the peripheral edge portion with the organic solvent supplied from the supply position, and removes the peripheral portion from the rotating substrate to be processed is executed.

In the substrate processing apparatus according to another aspect of the present disclosure, the control unit calculates the amount of warpage of the substrate to be processed in the fifth treatment, and in the seventh treatment, determines the supply position of the organic solvent with respect to the peripheral portion of the coating film. It is determined based on the amount of warpage, and the peripheral portion is melted by an organic solvent supplied from the supply position and removed from the substrate to be processed. Therefore, the supply position of the organic solvent with respect to the peripheral edge portion of the coating film is appropriately determined according to the warp of the substrate to be treated, so that the removal width of the peripheral edge portion can be made more uniform. Therefore, even when the substrate to be processed has a warp, appropriate treatment can be performed on the peripheral edge of the substrate to be processed. In addition, since the circuit can be formed on a region closer to the peripheral edge of the surface of the substrate to be processed, high integration of the circuit on the substrate to be processed is promoted, and the substrate to be processed can be used more efficiently. It becomes possible to do.

The substrate processing apparatus according to another aspect of the present disclosure further includes an irradiation unit configured to irradiate a peripheral region of the surface of the substrate to be processed with energy rays, and the control unit irradiates after the seventh treatment. In the peripheral exposure process, a peripheral exposure process is further executed in which a portion is controlled to expose a coating film located in the peripheral region of the surface of the substrate to be processed with a predetermined exposure width over the entire circumference of the peripheral edge of the substrate to be processed. The exposure width may be determined based on the amount of warpage calculated in the fifth process. In this case, since the exposure width is appropriately determined according to the warp of the substrate to be processed, it is possible to make the exposure width of the peripheral portion more uniform. Therefore, by developing the substrate to be processed after the peripheral exposure treatment, it is possible to make the removal width of the peripheral portion more uniform.

The substrate processing apparatus according to another aspect of the present disclosure further includes a storage unit for storing information about the substrate to be processed, and the control unit includes an eighth process of heating the coating film after the seventh process and an eighth process. After the 9th process of imaging the end face of the substrate to be processed by a camera over the entire peripheral edge of the substrate to be processed, and the image processed by the image obtained by the 9th process, the end face of the substrate to be processed is processed. Warpage of the substrate to be processed based on the tenth process of acquiring the shape data of the above over the entire periphery of the substrate to be processed, the shape data acquired in the second process, and the shape data acquired in the tenth process. The eleventh process for calculating the amount and the storage process for storing the substrate to be processed as a substrate to be processed as a substrate to be processed to be processed when the amount of warpage calculated in the eleventh process is larger than a predetermined threshold value. And may be further executed. In this case, the substrate to be processed that is difficult to be exposed by the exposure machine can be determined in advance, and the substrate to be processed can be excluded from the exposure processing. Therefore, it is possible to improve the processing efficiency of the substrate to be processed.

The substrate processing apparatus according to another aspect of the present disclosure further includes an irradiation unit configured to irradiate a peripheral region of the surface of the substrate to be processed with energy rays, and the control unit is applied after the seventh treatment. After the eighth process of heating the film and the eighth process, the ninth process of imaging the end face of the substrate to be processed with a camera over the entire periphery of the substrate to be processed, and the imaging obtained by the ninth process. The tenth process of processing the image and acquiring the shape data of the end face of the substrate to be processed over the entire peripheral edge of the substrate to be processed, and the shape data acquired in the second process and the tenth process are acquired. After the eleventh process of calculating the amount of warpage of the substrate to be processed based on the shape data and the ninth process, the irradiation portion is controlled to form a coating film located in the peripheral region of the surface of the substrate to be processed. Peripheral exposure processing for exposing the entire periphery of the peripheral edge of the substrate to be processed with a predetermined exposure width may be further executed, and in the peripheral edge exposure processing, the exposure width may be determined based on the amount of warpage calculated in the fifth process. .. In this case, since the exposure width is more appropriately determined according to the warp of the substrate to be processed after the heat treatment is performed in the eighth treatment, it is possible to make the exposure width of the peripheral portion more uniform. Become. Therefore, by developing the substrate to be processed after the peripheral exposure treatment, it is possible to make the removal width of the peripheral portion even more uniform.

The substrate processing apparatus according to another aspect of the present disclosure further includes a storage unit that stores information about the substrate to be processed, and the control unit determines that the amount of warpage calculated in the eleventh process is larger than a predetermined threshold value. A storage process of storing the substrate to be processed as a substrate to be processed that is not exposed to the substrate may be further executed. In this case, the substrate to be processed that is difficult to be exposed by the exposure machine can be determined in advance, and the substrate to be processed can be excluded from the exposure processing. Therefore, it is possible to improve the processing efficiency of the substrate to be processed.

The substrate processing apparatus according to another aspect of the present disclosure irradiates an energy ray to a coating liquid supply unit configured to supply a coating liquid to the surface of the substrate to be processed and a peripheral region of the surface of the substrate to be processed. The irradiation unit, at least one camera, and the control unit configured as described above are provided, and the control unit captures the end face of the reference substrate over the entire periphery of the reference substrate whose amount of warpage is known by the at least one camera. The first process, the second process of performing image processing on the captured image obtained in the first process, and acquiring the shape data of the end face of the reference substrate over the entire circumference of the peripheral edge of the reference substrate, and the peripheral edge of the substrate to be processed. The third process of capturing the end face of the substrate to be processed by at least one camera over the entire circumference and the image obtained by the third process are image-processed, and the shape data of the end face of the substrate to be processed is obtained from the substrate to be processed. A fifth process for calculating the amount of warpage of the substrate to be processed based on the fourth process acquired over the entire circumference of the peripheral edge of the circuit board, the shape data acquired in the second process, and the shape data acquired in the fourth process. After the sixth treatment of forming the coating film by controlling the treatment and the coating liquid supply portion and supplying the coating liquid to the surface of the substrate to be treated, and the sixth treatment, the irradiation portion is controlled to be coated. Peripheral exposure processing is performed in which the coating film located in the peripheral region of the surface of the treated substrate is exposed with a predetermined exposure width over the entire circumference of the peripheral edge of the substrate to be processed. Determined based on the amount of warpage calculated in.

In the substrate processing apparatus according to another aspect of the present disclosure, the warp amount of the substrate to be processed is calculated in the fifth process, and the exposure width is determined based on the warp amount in the peripheral exposure process. Therefore, since the exposure width is appropriately determined according to the warp of the substrate to be processed, it is possible to make the exposure width of the peripheral portion more uniform. Therefore, by developing the substrate to be processed after the peripheral exposure treatment, it is possible to make the removal width of the peripheral portion more uniform. As a result, even when the substrate to be processed has a warp, appropriate treatment can be performed on the peripheral edge of the substrate to be processed. In addition, since the circuit can be formed on a region closer to the peripheral edge of the surface of the substrate to be processed, high integration of the circuit on the substrate to be processed is promoted, and the substrate to be processed can be used more efficiently. It becomes possible to do.

The substrate processing apparatus according to another aspect of the present disclosure further includes a heating unit configured to heat the substrate to be processed, and the control unit controls the heating unit after the sixth treatment to form a coating film. The seventh process of heating may be further performed, and the third to fifth processes may be performed after the seventh process. In this case, since the exposure width is more appropriately determined according to the warp of the substrate to be processed after the heat treatment is performed in the seventh treatment, it is possible to make the exposure width of the peripheral portion more uniform. Become. Therefore, by developing the substrate to be processed after the peripheral exposure treatment, it is possible to make the removal width of the peripheral portion even more uniform.

The substrate processing apparatus according to another aspect of the present disclosure further includes a storage unit that stores information about the substrate to be processed, and the control unit determines that the amount of warpage calculated in the fifth process is larger than a predetermined threshold value. A storage process of storing the substrate to be processed as a substrate to be processed that is not exposed to the substrate may be further executed. In this case, the substrate to be processed that is difficult to be exposed by the exposure machine can be determined in advance, and the substrate to be processed can be excluded from the exposure processing. Therefore, it is possible to improve the processing efficiency of the substrate to be processed.

The substrate processing apparatus according to another aspect of the present disclosure further includes a second rotation holding unit configured to hold and rotate the substrate to be processed, and the control unit performs a second rotation in the third processing. By controlling the holding portion and rotating the substrate to be processed, the end face of the substrate to be processed is imaged by at least one camera over the entire peripheral edge of the substrate to be processed, and the substrate to be processed is held among the first rotation holding portions. The size of the portion may be substantially the same as the size of the portion of the second rotation holding portion that holds the substrate to be processed. By the way, when the rotation holding portion holds the substrate to be processed, stress is generated between the rotation holding portion and the substrate to be processed, and the amount of warpage of the substrate to be processed may change. As described above, when the size of the portion of the first rotation holding portion that holds the substrate to be processed is substantially the same as the size of the portion of the second rotation holding portion that holds the substrate to be processed, the rotation holding is performed. The stress generated between the portion and the substrate to be processed is about the same. Therefore, the amount of change in the amount of warpage is about the same when the amount of warpage of the substrate to be treated is calculated in the third to fifth treatments and when the organic solvent is supplied to the peripheral edge of the coating film in the seventh treatment. It becomes. Therefore, in the seventh treatment, it becomes easy to determine the supply position of the organic solvent with respect to the peripheral edge portion of the coating film.

The substrate processing apparatus according to another aspect of the present disclosure further includes first and second rotation holding units configured to hold and rotate the substrate to be processed, and the control unit is a third in the third processing. The rotation holding portion of 1 is controlled to rotate the substrate to be processed, and the end face of the substrate to be processed is imaged by at least one camera over the entire circumference of the peripheral edge of the substrate to be processed, and the second rotation holding portion is subjected to peripheral exposure processing. Under control, while rotating the substrate to be processed, the coating film located in the peripheral region of the surface of the substrate to be processed is exposed with a predetermined exposure width over the entire circumference of the peripheral edge of the substrate to be processed, and the first rotation holding portion The size of the portion that holds the substrate to be processed may be substantially the same as the size of the portion that holds the substrate to be processed in the second rotation holding portion. By the way, when the rotation holding portion holds the substrate to be processed, stress is generated between the rotation holding portion and the substrate to be processed, and the amount of warpage of the substrate to be processed may change. As described above, when the size of the portion of the first rotation holding portion that holds the substrate to be processed is substantially the same as the size of the portion of the second rotation holding portion that holds the substrate to be processed, the rotation holding is performed. The stress generated between the portion and the substrate to be processed is about the same. Therefore, the amount of change in the amount of warpage is about the same when the amount of warpage of the substrate to be processed is calculated in the third to fifth treatments and when the peripheral edge portion of the coating film is exposed in the peripheral exposure treatment. Therefore, in the peripheral exposure process, it becomes easy to determine the exposure width with respect to the peripheral portion of the coating film.

The processing chamber in which the image of the substrate to be processed is imaged in the third process may be different from the processing room in which the image of the substrate to be processed is imaged in the tenth process.

The substrate processing apparatus according to another aspect of the present disclosure is tilted with respect to the rotation axis of the second rotation holding portion and the second rotation holding portion configured to hold and rotate the substrate to be processed. A mirror member having a reflecting surface facing the end surface of the substrate to be processed and the peripheral region of the back surface held by the second rotation holding portion is further provided, and one camera of at least one camera is a second. The first light from the peripheral region of the surface of the substrate to be processed held by the rotation holding portion and the second light from the end surface of the substrate to be processed held by the second rotation holding portion are the reflecting surfaces of the mirror member. It may have an image pickup element in which both the reflected light reflected by the above are input through the lens. In this case, both the peripheral region of the surface of the substrate to be processed and the end surface of the substrate are simultaneously imaged by one camera. Therefore, as a result of eliminating the need for a plurality of cameras, a space for installing the plurality of cameras is also unnecessary. Further, since a mechanism for moving the camera is not required, a space for installing the mechanism is also unnecessary. Therefore, it is possible to reduce the size and cost of the substrate imaging device.

The reference substrate is flat, and in the second process, the control unit acquires the data of the first profile line passing through the center of the end face of the reference substrate as the shape data of the end face of the reference substrate, and in the fourth process, The data of the second profile line passing through the center of the end face of the substrate to be processed is acquired as the shape data of the end face of the substrate to be processed, and in the fifth process, the data of the first profile line and the data of the second profile line The amount of warpage of the substrate to be processed may be calculated based on the above. In this case, the amount of warpage of the substrate to be processed can be calculated more easily from the data of the first and second profile lines.

The control unit performs an image processing of the peripheral surface in which the peripheral region of the surface of the substrate to be processed is imaged by at least one camera, and an image processing of the image captured in the fourth process is performed on the surface of the substrate to be processed. In addition to inspecting the state of the end face of the peripheral region, an inspection process of inspecting the state of the peripheral region of the surface of the substrate to be processed by performing image processing on the captured image captured by the imaging process of the peripheral surface may be further executed. .. In this case, defects (for example, cracks, chips, scratches, etc.) in the vicinity of the peripheral edge of the substrate to be processed can be discriminated, and the substrate to be processed can be excluded from various treatments. Therefore, it is possible to improve the processing efficiency of the substrate to be processed.

The computer-readable recording medium according to another aspect of the present disclosure records a program for causing the substrate processing apparatus to execute the above-mentioned substrate processing method. In the computer-readable recording medium according to another aspect of the present disclosure, it is possible to make the removal width of the peripheral portion of the coating film more uniform, similar to the above-mentioned substrate processing method. In the present specification, the computer-readable recording medium includes a non-transitory computer recording medium (for example, various main storage devices or auxiliary storage devices) and a propagation signal (transitory computer recording medium). ) (For example, a data signal that can be provided via a network).

According to the substrate processing method, the substrate processing apparatus, and the computer-readable recording medium according to the present disclosure, it is possible to perform appropriate processing on the peripheral edge of the substrate even when the substrate has a warp.

FIG. 1 is a perspective view showing a substrate processing system. FIG. 2 is a sectional view taken along line II-II of FIG. FIG. 3 is a top view showing a unit processing block (BCT block, HMCT block and DEV block). FIG. 4 is a top view showing a unit processing block (COT block). FIG. 5 is a schematic view showing a liquid treatment unit. FIG. 6 is a cross-sectional view of the inspection unit as viewed from above. FIG. 7 is a cross-sectional view of the inspection unit as viewed from the side. FIG. 8 is a perspective view showing the inspection unit. FIG. 9 is a perspective view of the peripheral imaging subunit as viewed from the front. FIG. 10 is a perspective view of the peripheral imaging subunit as viewed from the rear. FIG. 11 is a top view of the peripheral imaging subunit. FIG. 12 is a side view of the two-sided imaging module. FIG. 13 is a perspective view showing a mirror member. FIG. 14 is a side view showing the mirror member. FIG. 15A is a diagram for explaining how the light from the lighting module is reflected by the mirror member, and FIG. 15B is a diagram for explaining how the light from the wafer is reflected by the mirror member. Is. FIG. 16 is a side view of the backside imaging subunit. FIG. 17 is a cross-sectional view of the peripheral exposure unit as viewed from the side. FIG. 18 is a perspective view showing a peripheral exposure unit. FIG. 19 is a block diagram showing a main part of the substrate processing system. FIG. 20 is a schematic view showing the hardware configuration of the controller. FIG. 21 is a flowchart for explaining a procedure for calculating the profile line of the reference wafer. FIG. 22 is a flowchart for explaining an example (first example) of the wafer processing procedure. FIG. 23 is a flowchart for explaining a wafer inspection processing procedure. FIG. 24 (a) is a graph showing the relationship between the amount of warpage of the wafer and the removal width of the peripheral portion of the resist film, and FIG. 24 (b) is a diagram for explaining the removal width of the peripheral portion of the resist film. .. FIG. 25 is a graph showing profile lines of a wafer and a reference wafer. FIG. 26 is a graph showing the amount of warpage. FIG. 27 (a) is a perspective view showing a wafer exhibiting a double-curved parabolic surface shape, and FIG. 27 (b) is a perspective view showing a wafer exhibiting an upwardly convex rotating parabolic surface shape. c) is a perspective view showing a wafer exhibiting a downwardly convex rotating parabolic shape. FIG. 28 is a flowchart for explaining another example (second example) of the wafer processing procedure. FIG. 29 is a flowchart for explaining another example (third example) of the wafer processing procedure.

As the embodiments according to the present disclosure described below are examples for explaining the present invention, the present invention should not be limited to the following contents. In the following description, the same reference numerals will be used for the same elements or elements having the same function, and duplicate description will be omitted.

[Board processing system]
As shown in FIG. 1, the board processing system 1 (board processing device) includes a coating and developing device 2 (board processing device) and a controller 10 (control unit). An exposure apparatus 3 is attached to the substrate processing system 1. The exposure apparatus 3 includes a controller (not shown) capable of communicating with the controller 10 of the substrate processing system 1. The exposure apparatus 3 transfers a wafer W (substrate) to and from the coating and developing apparatus 2 to perform an exposure process (pattern exposure) of a photosensitive resist film formed on the surface Wa of the wafer W (see FIG. 5 and the like). It is configured to do. Specifically, the exposed portion of the photosensitive resist film (photosensitive film) is selectively irradiated with energy rays by a method such as immersion exposure. Examples of the energy ray include ArF excimer laser, KrF excimer laser, g-ray, i-ray, and extreme ultraviolet (EUV).

In the coating and developing apparatus 2, the photosensitive resist film or the non-sensitive resist film (hereinafter collectively referred to as “resist film R” (see FIG. 5)) is referred to as the surface Wa of the wafer W before the exposure treatment by the exposure apparatus 3. Perform the process of forming. The coating and developing apparatus 2 develops the photosensitive resist film after the exposure treatment of the photosensitive resist film by the exposure apparatus 3.

The wafer W may have a disk shape or a plate shape other than a circle such as a polygon. The wafer W may have a notch portion that is partially notched. The notch portion may be, for example, a notch (groove of U-shape, V-shape, etc.) or a straight portion extending linearly (so-called orientation flat). The wafer W may be, for example, a semiconductor substrate, a glass substrate, a mask substrate, an FPD (Flat Panel Display) substrate, or various other substrates. The diameter of the wafer W may be, for example, about 200 mm to 450 mm. When a bevel (chamfer) is present on the edge of the wafer W, the "surface" in the present specification also includes a bevel portion when viewed from the surface Wa side of the wafer W. Similarly, the “back surface” in the present specification also includes a bevel portion when viewed from the back surface Wb (see FIG. 5 and the like) side of the wafer W. The "end face" in the present specification also includes a bevel portion when viewed from the end face Wc (see FIG. 5 and the like) side of the wafer W.

As shown in FIGS. 1 to 4, the coating and developing apparatus 2 includes a carrier block 4, a processing block 5, and an interface block 6. The carrier block 4, the processing block 5, and the interface block 6 are arranged in the horizontal direction.

The carrier block 4 has a carrier station 12 and a carry-in / carry-out unit 13 as shown in FIGS. 1, 3 and 4. The carrier station 12 supports a plurality of carriers 11. The carrier 11 houses at least one wafer W in a sealed state. An opening / closing door (not shown) for loading / unloading the wafer W is provided on the side surface 11a of the carrier 11. The carrier 11 is detachably installed on the carrier station 12 so that the side surface 11a faces the loading / unloading portion 13 side.

A recording medium 11b is provided in the carrier 11 (see FIG. 1). The recording medium 11b is, for example, a non-volatile memory, and stores the wafer W in the carrier 11 and information about the wafer W (details will be described later) in association with each other. When the carrier 11 is mounted on the carrier station 12, the controller 10 can access the recording medium 11b, and can read the information of the recording medium 11b and write the information to the recording medium 11b.

The carry-in / carry-out unit 13 is located between the carrier station 12 and the processing block 5. The carry-in / carry-out unit 13 has a plurality of opening / closing doors 13a. When the carrier 11 is placed on the carrier station 12, the opening / closing door of the carrier 11 is in a state of facing the opening / closing door 13a. By opening the opening / closing door 13a and the opening / closing door of the side surface 11a at the same time, the inside of the carrier 11 and the inside of the carry-in / carry-out portion 13 communicate with each other. The carry-in / carry-out unit 13 has a built-in delivery arm A1. The transfer arm A1 takes out the wafer W from the carrier 11 and passes it to the processing block 5, receives the wafer W from the processing block 5, and returns it to the carrier 11.

The processing block 5 has unit processing blocks 14 to 17 as shown in FIGS. 1 and 2. The unit processing blocks 14 to 17 are arranged in the order of the unit processing block 17, the unit processing block 14, the unit processing block 15, and the unit processing block 16 from the floor surface side. As shown in FIG. 3, the unit processing blocks 14, 15 and 17 have a liquid processing unit U1, a heat treatment unit U2 (heating unit), and an inspection unit U3. As shown in FIG. 4, the unit processing block 16 has a liquid processing unit U1, a heat treatment unit U2 (heating unit), an inspection unit U3, and a peripheral exposure unit U4.

The liquid treatment unit U1 is configured to supply various treatment liquids to the surface Wa of the wafer W (details will be described later). The heat treatment unit U2 is configured to heat the wafer W with, for example, a hot plate, and cool the heated wafer W with, for example, a cooling plate to perform heat treatment. The inspection unit U3 is configured to inspect each surface (front surface Wa, back surface Wb, and end surface Wc (see FIG. 5 and the like)) of the wafer W (details will be described later). The peripheral exposure unit U4 irradiates the peripheral region Wd (see FIG. 5 and the like) of the wafer W on which the resist film R is formed with ultraviolet rays, and exposes a portion of the resist film R located in the peripheral region Wd to be exposed. It is configured as follows.

The unit processing block 14 is a lower layer film forming block (BCT block) configured to form an lower layer film on the surface Wa of the wafer W. The unit processing block 14 incorporates a transfer arm A2 for transporting the wafer W in each of the units U1 to U3 (see FIGS. 2 and 3). The liquid treatment unit U1 of the unit treatment block 14 applies a coating liquid for forming an underlayer film to the surface Wa of the wafer W to form a coating film. The heat treatment unit U2 of the unit processing block 14 performs various heat treatments accompanying the formation of the underlayer film. Specific examples of the heat treatment include heat treatment for curing the coating film to form an underlayer film. Examples of the underlayer film include an antireflection (SiARC) film.

The unit processing block 15 is an intermediate film (hard mask) forming block (HMCT block) configured to form an intermediate film on the lower layer film. The unit processing block 15 incorporates a transfer arm A3 that conveys the wafer W to each of the units U1 to U3 (see FIGS. 2 and 3). The liquid treatment unit U1 of the unit treatment block 15 applies a coating liquid for forming an intermediate film on the lower film to form a coating film. The heat treatment unit U2 of the unit processing block 15 performs various heat treatments accompanying the formation of the interlayer film. Specific examples of the heat treatment include heat treatment for curing the coating film to form an intermediate film. Examples of the intermediate film include an SOC (Spin On Carbon) film and an amorphous carbon film.

The unit processing block 16 is a resist film forming block (COT block) configured to form a thermosetting resist film R on an intermediate film. The unit processing block 16 incorporates a transfer arm A4 for transporting the wafer W in each of the units U1 to U4 (see FIGS. 2 and 4). The liquid treatment unit U1 of the unit treatment block 16 applies a coating liquid (resist agent) for forming a resist film on the intermediate film to form a coating film. The heat treatment unit U2 of the unit processing block 16 performs various heat treatments accompanying the formation of the resist film. Specific examples of the heat treatment include heat treatment (PAB: Pre Applied Bake) for curing the coating film to obtain a resist film R.

The unit processing block 17 is a developing processing block (DEV block) configured to develop the exposed resist film R. The unit processing block 17 incorporates a transfer arm A5 that conveys the wafer W to each of the units U1 to U3, and a direct transfer arm A6 that conveys the wafer W without passing through these units (FIGS. 2 and 3). reference). The liquid treatment unit U1 of the unit processing block 17 supplies a developing solution to the resist film R after exposure to develop the resist film R. The liquid treatment unit U1 of the unit treatment block 17 supplies a rinse liquid to the resist film R after development, and flushes the dissolved components of the resist film R together with the developer. As a result, the resist film R is partially removed and a resist pattern is formed. The heat treatment unit U2 of the unit processing block 16 performs various heat treatments associated with the development process. Specific examples of the heat treatment include heat treatment (PEB: Post Exposure Bake) before development treatment, heat treatment (PB: Post Bake) after development treatment, and the like.

As shown in FIGS. 2 to 4, a shelf unit U10 is provided on the carrier block 4 side in the processing block 5. The shelf unit U10 is provided from the floor surface to the unit processing block 15, and is divided into a plurality of cells arranged in the vertical direction. An elevating arm A7 is provided in the vicinity of the shelf unit U10. The elevating arm A7 elevates the wafer W between the cells of the shelf unit U10.

A shelf unit U11 is provided on the interface block 6 side in the processing block 5. The shelf unit U11 is provided from the floor surface to the upper part of the unit processing block 17, and is divided into a plurality of cells arranged in the vertical direction.

The interface block 6 has a built-in transfer arm A8 and is connected to the exposure apparatus 3. The delivery arm A8 is configured to take out the wafer W of the shelf unit U11, pass it to the exposure apparatus 3, receive the wafer W from the exposure apparatus 3, and return it to the shelf unit U11.

The controller 10 controls the substrate processing system 1 partially or entirely. Details of the controller 10 will be described later. The controller 10 can send and receive signals to and from the controller of the exposure apparatus 3, and the substrate processing system 1 and the exposure apparatus 3 are controlled by the cooperation of each controller.

[Configuration of liquid treatment unit]
Subsequently, the liquid treatment unit U1 will be described in more detail with reference to FIG. As shown in FIG. 5, the liquid treatment unit U1 includes a rotation holding unit 20, a liquid supply unit 30 (coating liquid supply unit), and a liquid supply unit 40 (solvent supply unit).

The rotation holding portion 20 has a rotating portion 21 and a holding portion 22. The rotating portion 21 has a shaft 23 protruding upward. The rotating unit 21 rotates the shaft 23 using, for example, an electric motor or the like as a power source. The holding portion 22 is provided at the tip end portion of the shaft 23. The wafer W is arranged on the holding portion 22. The holding portion 22 is, for example, a suction chuck that holds the wafer W substantially horizontally by suction or the like. The shape of the holding portion 22 (suction chuck) is not particularly limited, but may be circular, for example. The size of the holding portion 22 may be smaller than that of the wafer W. When the holding portion 22 is circular, the size of the holding portion 22 may be, for example, about 80 mm in diameter.

The rotation holding unit 20 rotates the wafer W around an axis (rotation axis) perpendicular to the surface Wa of the wafer W in a state where the posture of the wafer W is substantially horizontal. In the present embodiment, the rotation axis passes through the center of the wafer W having a circular shape, and is therefore also the center axis. In the present embodiment, as shown in FIG. 5, the rotation holding unit 20 rotates the wafer W clockwise when viewed from above.

The liquid supply unit 30 is configured to supply the processing liquid L1 to the surface Wa of the wafer W. In the unit treatment blocks 14 to 16, the treatment liquid L1 is various coating liquids for forming an underlayer film, an intermediate film or a resist film. In this case, the liquid supply unit 30 functions as a coating liquid supply unit. In the unit processing block 17, the processing solution L1 is a developing solution. In this case, the liquid supply unit 30 functions as a developer supply unit.

The liquid supply unit 30 includes a liquid source 31, a pump 32, a valve 33, a nozzle 34, and a pipe 35. The liquid source 31 functions as a supply source for the treatment liquid L1. The pump 32 sucks the processing liquid L1 from the liquid source 31 and sends it to the nozzle 34 via the pipe 35 and the valve 33. The nozzle 34 is arranged above the wafer W so that the discharge port faces the surface Wa of the wafer W. The nozzle 34 is configured to be movable in the horizontal direction and the vertical direction by a drive unit (not shown). The nozzle 34 can discharge the processing liquid L1 delivered from the pump 32 onto the surface Wa of the wafer W. The pipe 35 connects the liquid source 31, the pump 32, the valve 33, and the nozzle 34 in this order from the upstream side.

The liquid supply unit 40 is configured to supply the processing liquid L2 to the surface Wa of the wafer W. In the unit treatment blocks 14 to 16, the treatment liquid L2 is various organic solvents for removing the underlayer film, the intermediate film or the resist film from the wafer W. In this case, the liquid supply unit 40 functions as a solvent supply unit. In the unit processing block 17, the treatment liquid L2 is a rinse liquid. In this case, the liquid supply unit 40 functions as a rinse liquid supply unit.

The liquid supply unit 40 includes a liquid source 41, a pump 42, a valve 43, a nozzle 44, and a pipe 45. The liquid source 41 functions as a supply source of the treatment liquid L2. The pump 42 sucks the processing liquid L2 from the liquid source 41 and sends it to the nozzle 44 via the pipe 45 and the valve 43. The nozzle 44 is arranged above the wafer W so that the discharge port faces the surface Wa of the wafer W. The nozzle 44 is configured to be movable in the horizontal direction and the vertical direction by a drive unit (not shown). The nozzle 44 can discharge the processing liquid L2 sent out from the pump 42 onto the surface Wa of the wafer W. The pipe 45 connects the liquid source 41, the pump 42, the valve 43, and the nozzle 44 in this order from the upstream side.

[Inspection unit configuration]
Subsequently, the inspection unit U3 will be described in more detail with reference to FIGS. 6 to 16. As shown in FIGS. 6 to 8, the inspection unit U3 includes a housing 100, a rotation holding subunit 200 (rotation holding portion), a surface imaging subunit 300, and a peripheral imaging subunit 400 (board imaging device). And a back surface imaging subunit 500. Each subunit 200 to 500 is arranged in the housing 100. On one end wall of the housing 100, a carry-in outlet 101 for carrying the wafer W inside the housing 100 and carrying it out of the housing 100 is formed.

The rotation holding subunit 200 includes a holding base 201, actuators 202 and 203, and a guide rail 204. The holding table 201 is, for example, a suction chuck that holds the wafer W substantially horizontally by suction or the like. The shape of the holding table 201 (suction chuck) is not particularly limited, but may be circular, for example. The size of the holding table 201 may be smaller than that of the wafer W, and may be about the same as the size of the holding portion 22 (suction chuck). When the holding table 201 is circular, the size of the holding table 201 (suction chuck) may be, for example, about 80 mm in diameter.

The actuator 202 is, for example, an electric motor, and rotationally drives the holding base 201. That is, the actuator 202 rotates the wafer W held on the holding table 201. The actuator 202 may include an encoder for detecting the rotational position of the holding base 201. In this case, the imaging position of each surface of the wafer W by the imaging subunits 300, 400, and 500 can be associated with the rotation position. When the wafer W has a notch, the posture of the wafer W is specified based on the notch determined by each imaging subunit 300, 400, 500 and the rotation position detected by the encoder. Can be done.

The actuator 203 is, for example, a linear actuator, and moves the holding base 201 along the guide rail 204. That is, the actuator 203 conveys the wafer W held by the holding base 201 between one end side and the other end side of the guide rail 204. Therefore, the wafer W held by the holding table 201 can be moved between the first position near the carry-in outlet 101 and the second position near the peripheral imaging subunit 400 and the back surface imaging subunit 500. .. The guide rail 204 extends linearly (for example, in a straight line) in the housing 100.

The surface imaging subunit 300 includes a camera 310 (imaging means) and a lighting module 320. The camera 310 and the lighting module 320 constitute a set of imaging modules. The camera 310 includes a lens and one image sensor (for example, a CCD image sensor, a CMOS image sensor, etc.). The camera 310 faces the lighting module 320 (illumination unit).

The lighting module 320 includes a half mirror 321 and a light source 322. The half mirror 321 is arranged in the housing 100 in a state of being tilted by about 45 ° with respect to the horizontal direction. The half mirror 321 is located above the intermediate portion of the guide rail 204 so as to intersect the guide rail 204 in the extending direction when viewed from above. The half mirror 321 has a rectangular shape. The length of the half mirror 321 is larger than the diameter of the wafer W.

The light source 322 is located above the half mirror 321. The light source 322 is longer than the half mirror 321. The light emitted from the light source 322 passes through the half mirror 321 as a whole and is irradiated downward (guide rail 204 side). The light that has passed through the half mirror 321 is reflected by an object located below the half mirror 321 and then reflected again by the half mirror 321. It passes through the lens of the camera 310 and is incident on the image sensor of the camera 310. That is, the camera 310 can image an object existing in the irradiation region of the light source 322 through the half mirror 321. For example, when the holding table 201 holding the wafer W is moved along the guide rail 204 by the actuator 203, the camera 310 can image the surface Wa of the wafer W passing through the irradiation region of the light source 322. The data of the captured image captured by the camera 310 is transmitted to the controller 10.

Peripheral imaging subunit 400 includes a camera 410 (imaging means), a lighting module 420, and a mirror member 430, as shown in FIGS. 6-12. The camera 410, the lighting module 420 (lighting unit), and the mirror member 430 constitute a set of imaging modules. The camera 410 includes a lens 411 and one image sensor 412 (for example, a CCD image sensor, a CMOS image sensor, etc.). The camera 410 faces the lighting module 420.

The lighting module 420 is arranged above the wafer W held on the holding table 201, as shown in FIGS. 9 to 12. The lighting module 420 includes a light source 421, a light scattering member 422, and a holding member 423. The light source 421 may be composed of, for example, a plurality of LED point light sources 421b (see FIG. 12).

As shown in FIGS. 9 to 12, the holding member 423 internally holds the half mirror 424, the cylindrical lens 425, the light diffusing member 426, and the focusing lens 427. As shown in FIGS. 12 and 14, the half mirror 424 is arranged at the intersection of the through hole 423a and the intersection hole 423b in a state of being tilted by approximately 45 ° with respect to the horizontal direction. The half mirror 424 has a rectangular shape.

The focus adjusting lens 427 is arranged in the cross hole 423b as shown in FIGS. 9 and 10. The focus adjustment lens 427 is not particularly limited as long as it is a lens having a function of changing the combined focal length with the lens 411. The focus adjustment lens 427 is, for example, a lens having a rectangular parallelepiped shape.

The mirror member 430 is arranged below the lighting module 420, as shown in FIGS. 9 and 12. The mirror member 430 includes a main body 431 and a reflecting surface 432 as shown in FIGS. 9 and 12 to 14. The main body 431 is composed of an aluminum block.

As shown in FIGS. 9 and 14, the reflective surface 432 is formed on the end surface Wc and the back surface Wb of the wafer W held on the holding table 201 when the wafer W held on the holding table 201 is in the second position. It faces the peripheral region Wd. The reflecting surface 432 is inclined with respect to the rotation axis of the holding table 201. The reflective surface 432 is mirror-finished. For example, a mirror sheet may be attached to the reflective surface 432, aluminum plating may be applied, or an aluminum material may be vapor-deposited.

The reflective surface 432 is a curved surface recessed toward the side away from the end surface Wc of the wafer W held on the holding table 201. That is, the mirror member 430 is a concave mirror. Therefore, when the end surface Wc of the wafer W is reflected on the reflection surface 432, the mirror image is enlarged from the real image. The radius of curvature of the reflecting surface 432 may be, for example, about 10 mm to 30 mm. The opening angle θ (see FIG. 14) of the reflecting surface 432 may be about 100 ° to 150 °. The opening angle θ of the reflecting surface 432 means an angle formed by two planes circumscribing the reflecting surface 432.

In the illumination module 420, the light emitted from the light source 421 is scattered by the light scattering member 422, magnified by the cylindrical lens 425, further diffused by the light diffusing member 426, and then passed through the half mirror 424 as a whole. Is irradiated downward. The diffused light that has passed through the half mirror 424 is reflected by the reflecting surface 432 of the mirror member 430 located below the half mirror 424. When the wafer W held by the holding table 201 is in the second position, the reflected light reflected by the diffused light on the reflecting surface 432 is mainly the end surface Wc (wafer) of the wafer W as shown in FIG. 15A. When a bevel is present on the edge of W, it is irradiated particularly on the upper end side of the bevel portion) and the peripheral region Wd of the surface Wa.

The reflected light reflected from the peripheral region Wd of the surface Wa of the wafer W is reflected again by the half mirror 424 without facing the reflecting surface 432 of the mirror member 430 (see FIG. 15B), and the focus adjustment lens 427 It passes through the lens 411 of the camera 410 without passing through, and is incident on the image pickup element 412 of the camera 410. On the other hand, the reflected light reflected from the end surface Wc of the wafer W is sequentially reflected by the reflecting surface 432 of the mirror member 430 and the half mirror 424, sequentially passes through the focus adjustment lens 427 and the lens 411 of the camera 410, and is passed through the camera 410. It is incident on the image pickup element 412 of. Therefore, the optical path length of the light reaching the image sensor 412 of the camera 410 from the end surface Wc of the wafer W is longer than the optical path length of the light reaching the image sensor 412 of the camera 410 from the peripheral region Wd of the surface Wa of the wafer W. The optical path difference between these optical paths may be, for example, about 1 mm to 10 mm. In this way, both the light from the peripheral region Wd of the surface Wa of the wafer W and the light from the end surface Wc of the wafer W are input to the image sensor 412 of the camera 410. That is, when the wafer W held by the holding table 201 is in the second position, the camera 410 can image both the peripheral region Wd of the surface Wa of the wafer W and the end surface Wc of the wafer W. The data of the captured image captured by the camera 410 is transmitted to the controller 10.

When the focus adjustment lens 427 is not present and the focus is on the peripheral region Wd of the surface Wa of the wafer W, due to the existence of the optical path difference, the peripheral edge of the surface Wa of the wafer W is captured in the image captured by the camera 410. The region Wd is clearly reflected, but the end face Wc of the wafer W tends to be blurred. On the other hand, when the focus adjustment lens 427 is not present and the end face Wc of the wafer W is focused, the end face Wc of the wafer W is clearly reflected in the image captured by the camera 410 due to the existence of the optical path difference, but the wafer. The peripheral region Wd of the surface Wa of W tends to appear blurred. However, since the focus adjustment lens 427 exists before the reflected light reflected by the reflecting surface 432 of the mirror member 430 reaches the lens 411, even if the optical path difference exists, the end surface Wc of the wafer W The imaging position matches the image sensor 412. Therefore, in the captured image captured by the camera 410, both the peripheral region Wd of the surface Wa of the wafer W and the end surface Wc of the wafer W are clearly captured.

The back surface imaging subunit 500 includes a camera 510 (imaging means) and a lighting module 520 (illumination unit), as shown in FIGS. 6 to 11 and 16. The camera 510 and the lighting module 520 constitute a set of imaging modules. The camera 510 includes a lens 511 and one image sensor 512 (for example, a CCD image sensor, a CMOS image sensor, etc.). The camera 510 faces the lighting module 520 (illumination unit).

The lighting module 520 is located below the lighting module 420 and below the wafer W held by the holding table 201. The illumination module 520 includes a half mirror 521 and a light source 522, as shown in FIG. The half mirror 521 is arranged in a state of being tilted by approximately 45 ° with respect to the horizontal direction. The half mirror 521 has a rectangular shape.

The light source 522 is located below the half mirror 521. The light source 522 is longer than the half mirror 521. The light emitted from the light source 522 passes through the half mirror 521 as a whole and is irradiated upward. The light that has passed through the half mirror 521 is reflected by an object located above the half mirror 521, then reflected again by the half mirror 521, passes through the lens 511 of the camera 510, and is incident on the image sensor 512 of the camera 510. .. That is, the camera 510 can image an object existing in the irradiation region of the light source 522 via the half mirror 521. For example, when the wafer W held by the holding table 201 is in the second position, the camera 510 can image the back surface Wb of the wafer W. The data of the captured image captured by the camera 510 is transmitted to the controller 10.

[Structure of peripheral exposure unit]
Subsequently, the peripheral exposure unit U4 will be described in more detail with reference to FIGS. 17 and 18. As shown in FIG. 17, the peripheral exposure unit U4 has a housing 600, a rotation holding subunit 700 (rotation holding unit), and an exposure subunit 800 (irradiation unit). The subunits 700 and 800 are arranged in the housing 600. On one end wall of the housing 600, a carry-in outlet 601 for carrying the wafer W inside the housing 600 and carrying it out of the housing 600 is formed.

The rotation holding subunit 700 includes a holding base 701, actuators 702 and 703, and a guide rail 704, as shown in FIGS. 17 and 18. The holding table 701 is a suction chuck that holds the wafer W substantially horizontally by suction or the like, for example. The shape of the holding table 701 (suction chuck) is not particularly limited, but may be circular, for example. The size of the holding base 701 may be smaller than that of the wafer W, and may be about the same as the size of the holding portion 22 (suction chuck) and the holding base 201 (suction chuck). When the holding table 701 is circular, the size of the holding table 701 (suction chuck) may be, for example, about 80 mm in diameter.

The actuator 702 is, for example, an electric motor, and rotationally drives the holding base 701. That is, the actuator 702 rotates the wafer W held on the holding table 201. The actuator 702 may include an encoder for detecting the rotational position of the holding base 701. In this case, the exposure position with respect to the peripheral region Wd of the wafer W by the exposure subunit 800 can be associated with the rotation position.

The actuator 703 is, for example, a linear actuator, and moves the holding base 701 along the guide rail 704. That is, the actuator 703 conveys the wafer W held by the holding base 701 between one end side and the other end side of the guide rail 704. Therefore, the wafer W held by the holding table 701 can be moved between the first position near the carry-in outlet 601 and the second position near the exposure subunit 800. The guide rail 704 extends linearly (for example, in a straight line) in the housing 600.

The exposure subunit 800 is located above the rotation holding subunit 700. As shown in FIG. 18, the exposure subunit 800 includes a light source 801, an optical system 802, a mask 803, and an actuator 804. The light source 801 irradiates the resist film R with energy rays (for example, ultraviolet rays) containing an exposed wavelength component toward the lower side (holding table 701 side). As the light source 801, for example, an ultra-high voltage UV lamp, a high-voltage UV lamp, a low-voltage UV lamp, an excimer lamp, or the like may be used.

The optical system 802 is located below the light source 801. The optical system 802 is composed of at least one lens. The optical system 802 converts the light from the light source 801 into substantially parallel light and irradiates the mask 803 with the light. The mask 803 is located below the optical system 802. The mask 803 is formed with an opening 803a for adjusting the exposure area. The parallel light from the optical system 802 passes through the opening 803a and irradiates the peripheral region Wd of the surface Wa of the wafer W held by the holding table 701.

The actuator 804 is connected to the light source 801. The actuator 804 is, for example, an elevating cylinder, and elevates the light source 801 in the vertical direction. That is, the light source 801 has a first height position (lowering position) that approaches the wafer W held by the holding table 701 and a second height that moves away from the wafer W held by the holding table 701 by the actuator 804. It is possible to move to and from the vertical position (elevation position).

[Controller configuration]
As shown in FIG. 19, the controller 10 has a reading unit M1, a storage unit M2, a processing unit M3, and an indicating unit M4 as functional modules. These functional modules merely divide the functions of the controller 10 into a plurality of modules for convenience, and do not necessarily mean that the hardware constituting the controller 10 is divided into such modules. Each functional module is not limited to that realized by executing a program, but is realized by a dedicated electric circuit (for example, a logic circuit) or an integrated circuit (ASIC: Application Specific Integrated Circuit) that integrates the same. You may.

The reading unit M1 reads a program from a computer-readable recording medium RM. The recording medium RM records a program for operating each part of the substrate processing system 1. The recording medium RM may be, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or an optical magnetic recording disk.

The storage unit M2 stores various data. In addition to the program read from the recording medium RM by the reading unit M1, the information about the wafer W read from the recording medium 11b, the data of the captured images captured by the cameras 310, 410, and 510, the storage unit M2 can be stored in the wafer W. Various data (so-called processing recipe) when supplying the processing liquids L1 and L2, setting data input from the operator via an external input device (not shown), and the like are stored.

The processing unit M3 processes various data. The processing unit M3 includes, for example, a liquid processing unit U1 (for example, rotation holding unit 20, liquid supply units 30, 40, etc.), a heat treatment unit U2, and an inspection unit U3 (for example, based on various data stored in the storage unit M2). For example, an operation signal for operating the rotation holding subunit 200, the camera 310, 410, 510, the lighting module 320, 420, 520) and the peripheral exposure unit U4 (for example, the rotation holding subunit 700, the exposure subunit 800) is transmitted. Generate. Further, the processing unit M3 generates information about the wafer W based on the data of the captured images captured by the cameras 310, 410, and 510.

The instruction unit M4 transmits the operation signal generated by the processing unit M3 to various devices. The instruction unit M4 stores the information regarding the wafer W generated by the processing unit M3 in the recording medium 11b. The instruction unit M4 transmits an instruction signal for reading information about the wafer W stored in the recording medium 11b to the recording medium 11b.

The hardware of the controller 10 is composed of, for example, one or a plurality of control computers. The controller 10 has, for example, the circuit 10A shown in FIG. 20 as a hardware configuration. The circuit 10A may be composed of an electric circuit element (circuitry). Specifically, the circuit 10A includes a processor 10B, a memory 10C (storage unit), a storage 10D (storage unit), a driver 10E, and an input / output port 10F. The processor 10B constitutes each of the above-mentioned functional modules by executing a program in cooperation with at least one of the memory 10C and the storage 10D and executing input / output of a signal via the input / output port 10F. The memory 10C and the storage 10D function as a storage unit M2. The driver 10E is a circuit for driving various devices of the substrate processing system 1. The input / output ports 10F are the driver 10E and various devices of the substrate processing system 1 (for example, recording medium 11b, rotating unit 21, holding unit 22, pumps 32, 42, valves 33, 43, heat treatment unit U2, holding bases 201, 701). , Actuators 202, 203, 702, 703, 804, cameras 310, 410, 510, light sources 322, 421, 522, 801 etc.).

In the present embodiment, the substrate processing system 1 includes one controller 10, but may include a controller group (control unit) composed of a plurality of controllers 10. When the board processing system 1 includes a controller group, each of the above functional modules may be realized by one controller 10, or may be realized by a combination of two or more controllers 10. .. When the controller 10 is composed of a plurality of computers (circuit 10A), each of the above functional modules may be realized by one computer (circuit 10A), or two or more computers (circuit 10A). ) May be realized. The controller 10 may have a plurality of processors 10B. In this case, each of the above functional modules may be realized by one processor 10B, or may be realized by a combination of two or more processors 10B.

[Calculation method of profile line of reference wafer]
Subsequently, a method of calculating the profile line of the reference wafer using the inspection unit U3 will be described with reference to FIG. Here, the reference wafer means a wafer in which the amount of warpage (particularly the amount of warpage of the peripheral edge) is known. The reference wafer may be a flat wafer. Examples of the evaluation index of the flatness of the wafer W include GBIR (GlobalBackside Ideal focal plane Range), SFQR (Site Frontsideleast sQuares focal plane Range), and SBIR (SiteBackside least sQuares focal) defined by the SEMI (Semiconductor equipment and materials international) standard. Plane Range), ROA (Roll OffAmount), ESFQR (Edge Site Frontsideleast sQuares focal plane Range), ZDD (Z-heightDoubleDifferentiation) and the like. The reference wafer may have, for example, a flatness with a maximum value of SFQR of about 100 nm, a maximum value of SFQR with a flatness of about 42 nm, and a maximum value of SFQR of 32 nm. It may have a flatness of about 16 nm, or the maximum value of SFQR may have a flatness of about 16 nm.

The wafer W rotated by the holding base 201 is caused by the presence of the shaft runout of the rotating shaft itself of the holding base 201, the runout due to the mechanical assembly tolerance of the rotation holding subsystem 200, the runout due to the tolerance on the suction surface of the holding base 201, and the like. It rotates eccentrically and the peripheral edge of the wafer W can swing up and down. An object of using the reference wafer is to obtain a reference value of the runout of the wafer W in the vertical direction in the rotation holding subunit 200. The reference value data may be acquired using the reference wafer before the start of processing of the wafer W by the substrate processing system 1, or the reference value may be acquired using the reference wafer after the maintenance (adjustment, cleaning, etc.) of the substrate processing system 1. The data of the reference value may be acquired, or the data of the reference value may be acquired by using the reference wafer on a regular basis. By comparing the data of the reference value with the data obtained by inspecting the wafer W (processed wafer) actually processed by the inspection unit U3, the accurate amount of warpage of the processed wafer can be grasped.

First, the controller 10 controls each part of the substrate processing system 1 to transfer the reference wafer to the inspection unit U3 (step S11). Next, the controller 10 controls the rotation holding subunit 200 to hold the reference wafer on the holding table 201. Next, the controller 10 controls the rotation holding subunit 200 to move the holding base 201 from the first position to the second position by the actuator 203 along the guide rail 204. As a result, the peripheral edge of the reference wafer is located between the lighting module 420 and the mirror member 430.

Next, the controller 10 controls the rotation holding subunit 200, and the holding base 201 is rotated by the actuator 202. As a result, the reference wafer rotates. In this state, the controller 10 controls the peripheral imaging subunit 400 to turn on the light source 421 and perform imaging by the camera 410 (step S12). In this way, the end face of the reference wafer is imaged over the entire periphery of the reference wafer.

Next, the profile line of the reference wafer is calculated by the processing unit M3 based on the captured image of the end face of the reference wafer obtained in step S12 (step S13). Specifically, the controller 10 determines the upper edge and the lower edge of the end face of the reference wafer from the captured image in the processing unit M3 based on, for example, the contrast difference. Then, the controller 10 calculates the line passing through the intermediate position between the upper edge and the lower edge as a profile line in the processing unit M3. In this way, the shape of the end face of the reference wafer is acquired. As an example, the profile line P0 of the reference wafer is shown in FIG.

[Wafer processing method]
Subsequently, a method for processing the wafer W will be described with reference to FIG. First, the controller 10 controls each part of the substrate processing system 1 to convey the wafer W from the carrier 11 to the inspection unit U3, and inspect the wafer W (step S21). The details of the wafer W inspection process will be described later, but the amount of warpage of the wafer W is calculated in the wafer W inspection process. The calculated warp amount is stored in the storage unit M2 in association with the wafer W.

Next, the controller 10 controls each part of the substrate processing system 1 to convey the wafer W to the liquid processing unit U1 and form a resist film R on the surface Wa of the wafer W (step S22). Specifically, the controller 10 controls the rotation holding unit 20 to hold the wafer W in the holding unit 22 and rotate the wafer W at a predetermined rotation speed. In this state, the controller 10 controls the pump 32, the valve 33, and the nozzle 34 (more specifically, the driving unit that drives the nozzle 34) to nozzle the processing liquid L1 (resist liquid) with respect to the surface Wa of the wafer W. A coating film (unsolidified film) discharged from 34 and not solidified is formed on the entire surface Wa of the wafer W.

Next, the controller 10 controls each part of the substrate processing system 1 to remove the portion of the uncured film located in the peripheral region Wd of the wafer W (the peripheral portion of the uncured film) (so-called edge rinsing process). (Step S23). Specifically, the controller 10 controls the rotation holding unit 20 to hold the wafer W in the holding unit 22 and rotate the wafer W at a predetermined rotation speed (for example, about 1500 rpm). In this state, the controller 10 controls the pump 42, the valve 43, and the nozzle 44 (more specifically, the driving unit that drives the nozzle 44), and the processing liquid L2 (organic) with respect to the peripheral region Wd of the surface Wa of the wafer W. Thinner, which is a solvent, is discharged from the nozzle 44 to dissolve the peripheral edge of the uncured film.

Next, the controller 10 controls each part of the substrate processing system 1 to transfer the wafer W from the liquid processing unit U1 to the heat treatment unit U2. Next, the controller 10 controls the heat treatment unit U2 to heat the uncured film together with the wafer W (so-called PAB) to form a solidified film (resist film R) in which the uncured film is solidified (step S24).

By the way, if the peripheral edge of the wafer W is warped, the height position of the peripheral edge of the wafer W may fluctuate when the wafer W is rotated. Here, when an edge rinsing process was performed on the wafer W whose peripheral edge was warped without changing the height position of the nozzle 44, as shown in FIG. 24A, the peripheral edge of the wafer W was subjected to an edge rinse treatment. It was confirmed that there is a proportional relationship between the amount of warpage and the removal width RW of the peripheral portion of the resist film R (see FIG. 24B). Therefore, when the edge rinse treatment is performed on such a wafer W, the removal width RW may become non-uniform along the peripheral edge of the wafer W. The removal width RW is a linear distance between the peripheral edge of the wafer W and the peripheral edge of the resist film R in the radial direction of the wafer W when viewed from the surface Wa side of the wafer W.

Therefore, in step S23, the controller 10 reads the warp amount of the peripheral edge of the wafer W calculated in step S21 from the storage unit M2, and based on the warp amount, the treatment liquid by the nozzle 44 with respect to the peripheral edge portion of the resist film R. Determine the supply position of L2 and the like. In the processing recipe of the liquid processing unit U1, the set value of the removal width is set in advance assuming the wafer W having no warp, so that the controller 10 desires the actual removal width of the peripheral portion of the uncured film. The set value is corrected based on the amount of warpage so as to have the magnitude of. Specifically, the controller 10 controls the nozzle 44 to adjust the position of the discharge port of the nozzle 44 or controls the nozzle 44 so that the removal width of the peripheral portion of the unsolidified film becomes a desired size. The moving speed of the nozzle 44 with respect to the wafer W is adjusted, and the valve 43 is controlled to adjust the discharge flow rate of the processing liquid L2 from the nozzle 44.

As a result, the treatment liquid L2 (organic solvent) is discharged from the nozzle 44 to the peripheral region Wd of the surface Wa of the wafer W while changing the supply position of the treatment liquid L2 by the nozzle 44 for each different wafer W. When the edge rinsing treatment is performed on one wafer W, the rotation speed of the wafer W in the edge rinsing treatment is relatively high (for example, about 1500 rpm), so that it is based on the average value of the warpage amount of the peripheral edge of the wafer W. The supply position may be determined. The removal width may be, for example, about 1 mm.

Next, the controller 10 controls each part of the substrate processing system 1 to convey the wafer W from the liquid processing unit U1 to the peripheral exposure unit U4, and performs the peripheral exposure processing of the wafer W (step S25). Specifically, the controller 10 controls the rotation holding subunit 700 to hold the wafer W on the holding table 701 and rotate the wafer W at a predetermined rotation speed (for example, about 30 rpm). In this state, the controller 10 controls the exposure subunit 800 to irradiate the resist film R located in the peripheral region Wd of the surface Wa of the wafer W with a predetermined energy ray (ultraviolet ray) from the light source 801. If the central axis of the holding table 701 and the central axis of the wafer W do not match, the wafer W rotates eccentrically on the holding table 701. Therefore, the controller 10 controls the actuator 703 to control the wafer W. The holding base 701 may be moved along the guide rail 704 according to the amount of eccentricity.

By the way, if the peripheral edge of the wafer W is warped, the height position of the peripheral edge of the wafer W may fluctuate when the wafer W is rotated. In this case, when the peripheral region Wd of the surface Wa of the wafer W is irradiated with the energy rays, there may be a portion where the energy rays converge and a portion where the energy rays do not converge in the peripheral region Wd. Therefore, the exposure amount for the peripheral region Wd may be insufficient.

Therefore, in step S25, the controller 10 reads the warp amount of the peripheral edge of the wafer W calculated in step S21 from the storage unit M2, and based on the warp amount, determines the position of the exposure subunit 800 with respect to the peripheral edge region Wd. decide. In the processing recipe of the peripheral exposure unit U4, the set value of the exposure width is set in advance assuming the wafer W having no warp, so that the controller 10 desires the actual exposure width of the peripheral portion of the resist film R. The set value is corrected based on the amount of warpage so as to have the magnitude of. Specifically, the controller 10 controls the actuator 703 to adjust the horizontal position of the wafer W with respect to the exposure subunit 800 so that the exposure width of the peripheral portion of the resist film R becomes a desired size, or the actuator 804. Is controlled to adjust the separation distance (optical path length) of the wafer W with respect to the exposure subunit 800. For example, when the peripheral edge of the wafer W is warped toward the side approaching the exposure subunit 800 (when it is warped upward), the exposure subunit of the wafer W is located so that the exposure subunit 800 is located closer to the center of the wafer W. The horizontal position with respect to the unit 800 is adjusted, and the exposure subunit 800 moves upward. On the other hand, when the peripheral edge of the wafer W is warped toward the side away from the exposure subunit 800 (when it is warped downward), the exposure subunit 800 of the wafer W is located closer to the peripheral edge of the wafer W. The horizontal position with respect to the unit 800 is adjusted, and the exposure subunit 800 moves downward. When the peripheral edge of the wafer W is warped by, for example, about 200 μm, the horizontal position of the wafer W with respect to the exposure subunit 800 is adjusted by, for example, about 0.1 mm, or the height position of the exposure subunit 800 with respect to the wafer W. Is adjusted by, for example, about 0.2 mm.

As a result, energy rays are applied to the peripheral region Wd of the surface Wa of the wafer W while changing the position of the exposure subunit 800 with respect to the wafer W for each different wafer W. When performing peripheral exposure processing on one wafer W, the rotation speed of the wafer W is relatively low (for example, about 30 rpm), so that the exposure subunit for the wafer W is based on the amount of warpage with respect to the coordinates of the peripheral edge of the wafer W. The position of 800 may be determined. The exposure width is larger than the removal width in the edge rinsing treatment, and may be, for example, about 1.5 mm.

Next, the controller 10 controls each part of the substrate processing system 1 to convey the wafer W from the peripheral exposure unit U4 to the inspection unit U3, and inspect the wafer W (step S26). The inspection process of the wafer W here is the same as in step S21, and the details will be described later.

Next, the controller 10 controls each part of the substrate processing system 1 to convey the wafer W from the inspection unit U3 to the exposure apparatus 3, and perform the exposure processing of the wafer W (step S27). Specifically, in the exposure apparatus 3, the resist film R formed on the surface Wa of the wafer W is irradiated with a predetermined energy ray in a predetermined pattern. After that, a resist pattern is formed on the surface Wa of the wafer W through development processing in the unit processing block 17.

[Wafer inspection method]
Subsequently, the inspection method of the wafer W (processed substrate) will be described in detail with reference to FIG. 23. First, the controller 10 controls each part of the substrate processing system 1 to convey the wafer W to the inspection unit U3 (step S31). Next, the controller 10 controls the rotation holding subunit 200 to hold the wafer W on the holding base 201. Next, the controller 10 controls the rotation holding subunit 200 to move the holding base 201 from the first position to the second position by the actuator 203 along the guide rail 204. At this time, the controller 10 controls the surface imaging subunit 300 to perform imaging by the camera 310 while turning on the light source 322 (step S32; imaging step of the surface Wa of the wafer W). In this way, the entire surface Wa of the wafer W is imaged. When the wafer W reaches the second position and the imaging by the camera 310 is completed, the data of the image captured by the camera 310 is transmitted to the storage unit M2. When the imaging by the camera 310 is completed, the peripheral edge of the wafer W is located between the lighting module 420 and the mirror member 430.

Next, the controller 10 controls the rotation holding subunit 200, and the holding base 201 is rotated by the actuator 202. As a result, the wafer W rotates. In this state, the controller 10 controls the peripheral imaging subunit 400 to perform imaging by the camera 410 while turning on the light source 421 (step S32; imaging step of the end face Wc of the wafer W and the surface Wa of the wafer W. Of which, the imaging process of the peripheral region Wd). In this way, the end face Wc of the wafer W and the peripheral region Wd of the surface Wa of the wafer W are imaged over the entire circumference of the peripheral edge of the wafer W. At the same time, the controller 10 controls the back surface imaging subunit 500 to perform imaging by the camera 510 while turning on the light source 522 (step S32; imaging step of the back surface Wb of the wafer W). In this way, the back surface Wb of the wafer W is imaged. When the wafer W makes one rotation and the imaging by the cameras 410 and 510 is completed, the data of the images captured by the cameras 410 and 510 is transmitted to the storage unit M2.

Next, the controller 10 processes the data of the captured image captured in step S32 in the processing unit M3 to detect defects in the wafer W (step S33). Various known methods can be used for defect detection by image processing, and defects may be detected based on, for example, a contrast difference. The controller 10 determines the type of defect (for example, crack, chip, scratch, poorly formed coating film, etc.) in the processing unit M3 based on the detected defect size, shape, location, and the like.

Next, the controller 10 determines in the processing unit M3 whether or not the defect detected in step S33 is within the permissible range. As a result of the determination, if an unacceptable defect exists in the wafer W (NO in step S34), the controller 10 controls each part of the substrate processing system 1 without performing the subsequent processing on the wafer W. The wafer W is returned to the carrier 11 (step S35). Therefore, the exposure process of step S26 is not performed on the wafer W (see the “A” mark in FIGS. 22 and 23).

On the other hand, as a result of the determination, if there are no defects in the wafer W or if there are acceptable defects in the wafer W (YES in step S34), the controller 10 determines that the end face Wc of the wafer W obtained in step S32. The profile line of the wafer W is calculated by the processing unit M3 based on the captured image of (step S36). Specifically, the controller 10 determines the upper edge and the lower edge of the end face Wc of the wafer W from the captured image based on, for example, the contrast difference. Then, the controller 10 calculates the line passing through the intermediate position between the upper edge and the lower edge as a profile line in the processing unit M3. In this way, the shape of the end face Wc of the wafer W is acquired.

As an example, profile lines P1 to P3 of three types of wafers W are shown in FIG. The profile line P1 draws a sine curve so as to intersect the profile line P0 of the reference wafer. The profile line P2 extends along the profile line P0 without exceeding the profile line P0 of the reference wafer. The profile line P3 extends along the profile line P0 without falling below the profile line P0 of the reference wafer.

Next, the controller 10 corrects the profile lines P1 to P3 obtained in step S36 using the profile line P0 acquired in advance in step S13, and calculates the amount of warpage of the wafer W in the processing unit M3 (step S37). ). Specifically, the controller 10 subtracts the profile line of the reference wafer from the profile line of the wafer W in the processing unit M3 to calculate the amount of warpage with respect to the coordinates (angle) of the wafer W.

In FIG. 26, the warp amount Q1 obtained by subtracting the profile line P0 of the reference wafer from the profile line P1 of the wafer W and the warp obtained by subtracting the profile line P0 of the reference wafer from the profile line P2 of the wafer W. The amount Q2 and the warp amount Q3 obtained by subtracting the profile line P0 of the reference wafer from the profile line P3 of the wafer W are shown. According to the warp amount Q1, it can be understood that the peripheral edge of the wafer W undulates up and down. Therefore, it can be determined that the wafer W has a hyperbolic parabolic shape as shown in FIG. 27 (a). According to the warp amount Q2, it can be understood that the peripheral edge of the wafer W is located below. Therefore, it can be determined that the wafer W has an upwardly convex rotating paraboloid shape as shown in FIG. 27 (b). According to the warp amount Q3, it can be understood that the peripheral edge of the wafer W is located above. Therefore, it can be determined that the wafer W has a downwardly convex rotating paraboloid shape as shown in FIG. 27 (c).

Next, the controller 10 determines in the processing unit M3 whether or not the amount of warpage obtained in step S37 is within the permissible range. The allowable range of the amount of warpage may be set by, for example, a numerical value in the overlay (OL) control of the exposure apparatus 3. As a result of the determination, when the amount of warpage is large and unacceptable (NO in step S38), the controller 10 associates the information that the exposure process is not performed on the wafer W with the wafer W and sends the storage unit M2. It is memorized (step S39). Therefore, the exposure process of step S26 is not performed on the wafer W (see the “A” mark in FIGS. 22 and 23).

On the other hand, as a result of the determination, if the amount of warpage is small and acceptable (YES in step S38), the controller 10 completes the inspection process. At this time, the controller 10 controls each part of the substrate processing system 1 to convey the wafer W from the inspection unit U3 to the exposure apparatus 3.

[Action]
In the present embodiment, the amount of warpage of the wafer W is calculated in step S37, and in step S23, the supply position of the processing liquid L2 by the nozzle 44 with respect to the peripheral edge of the resist film R is set based on the amount of warpage, and the supply position is set. The peripheral portion is melted by the treatment liquid L2 supplied from the wafer W and removed from the wafer W. Therefore, the supply position of the processing liquid L2 with respect to the peripheral edge portion of the resist film R is appropriately set according to the warp of the peripheral edge portion of the wafer W, so that the removal width RW of the peripheral edge portion can be made more uniform. Therefore, even when the wafer W has a warp, it is possible to perform appropriate processing on the peripheral edge of the wafer W. Further, since the circuit can be formed in the region closer to the peripheral edge of the surface Wa of the wafer W, the high integration of the circuit into the wafer W is promoted, and the wafer W can be used more efficiently. Is possible.

Similarly, in the present embodiment, the warp amount of the wafer W is calculated in step S37, and the exposure width is determined based on the warp amount in step S25. Therefore, since the exposure width is appropriately set according to the warp of the peripheral edge of the wafer W, the exposure width of the peripheral edge portion can be made more uniform. Therefore, it is possible to make the removal width of the peripheral portion of the resist film R more uniform. As a result, even when the wafer W has a warp, it is possible to perform appropriate processing on the peripheral edge of the wafer W. Further, since the circuit can be formed in the region closer to the peripheral edge of the surface Wa of the wafer W, the high integration of the circuit into the wafer W is promoted, and the wafer W can be used more efficiently. Is possible.

In the present embodiment, in step S37, the profile lines P0 of the reference wafer are used to correct the profile lines P1 to P3 of the wafer W, and the warp amount of the wafer W is calculated. Therefore, by subtracting the profile line P0 of the reference wafer from the profile lines P1 to P3 of the wafer W, the amount of warpage of the wafer W can be calculated more easily from the profile lines P0 and the profile lines P1 to P3.

In the present embodiment, it is determined whether or not the amount of warpage obtained in step S37 is within the permissible range, and if the amount of warpage is large and unacceptable (NO in step S38), the wafer W is exposed. I can't. Therefore, the wafer W that is difficult to expose in the exposure apparatus 3 can be determined in advance, and the wafer W can be excluded from the exposure process. Therefore, it is possible to improve the processing efficiency of the wafer W.

In the present embodiment, it is determined whether or not the defect detected in step S33 is within the permissible range, and if an unacceptable defect exists in the wafer W (NO in step S34), the following is performed with respect to the wafer W. No processing is done. Therefore, defects (for example, cracks, chips, scratches, etc.) near the surface Wa of the wafer W or the periphery of the wafer W can be discriminated, and the wafer W can be excluded from various treatments. Therefore, it is possible to further improve the processing efficiency of the wafer W.

In the present embodiment, the size of the holding portion 22, the size of the holding base 201, and the size of the holding base 701 are all about the same. Therefore, the stress generated between the holding portion 22 and the holding bases 201 and 701 and the wafer W is about the same. Therefore, the amount of change in the amount of warpage is about the same when the amount of warpage of the wafer W is calculated in step S37, when the edge rinsing process is performed in step S23, and when the peripheral surface exposure process is performed in step S25. As a result, based on the amount of warpage calculated in step S37, it becomes easy to correct the set value of the removal width in step S23 and the set value of the exposure width in step S25.

In the present embodiment, the mirror member 430 has a reflecting surface 432 that is inclined with respect to the rotation axis of the holding table 201 and faces the end surface Wc of the wafer W held by the holding table 201 and the peripheral region Wd of the back surface Wb. doing. Further, in the present embodiment, the image sensor 412 of the camera 410 receives light from the peripheral region Wd of the surface Wa of the wafer W held by the holding table 201 and the end surface Wc of the wafer W held by the holding table 201. The light is input through the lens 411 together with the reflected light reflected by the reflecting surface 432 of the mirror member 430. Therefore, both the peripheral region Wd of the surface Wa of the wafer W and the end surface Wc of the wafer W are simultaneously imaged by one camera 410. Therefore, as a result of eliminating the need for a plurality of cameras, the space for installing the plurality of cameras is also unnecessary. As described above, in the present embodiment, the device configuration of the inspection unit U3 is extremely simplified. Further, since a mechanism for moving the camera 410 is not required, a space for installing the mechanism is also unnecessary. As a result, it is possible to reduce the size and cost of the inspection unit U3 while suppressing equipment troubles.

In the present embodiment, the reflective surface 432 is a curved surface recessed toward the side away from the end surface Wc of the wafer W held on the holding table 201. Therefore, the mirror image of the end surface Wc of the wafer W reflected on the reflection surface 432 is enlarged compared to the real image. For example, when the reflecting surface 432 is not a curved surface, the width of the end surface Wc of the wafer W in the captured image is about 20 pixels, but when the reflecting surface 432 is a curved surface as described above, the end surface of the wafer W in the captured image is The width of Wc is expanded to about 1.5 times in the thickness direction of the wafer W. Therefore, a more detailed captured image of the end face Wc of the wafer W can be obtained. As a result, the end face Wc of the wafer W can be inspected more accurately by performing image processing on the captured image.

By the way, the optical path length from the end surface Wc of the wafer W to the reflection surface 432 of the mirror member 430 to reach the lens 411 is such that the light from the peripheral region Wd of the surface Wa of the wafer W reaches the lens 411. Compared with the optical path length of, it is longer by the amount reflected by the mirror member 430. However, in the present embodiment, the focus adjustment lens 427 is arranged in the middle of the optical path until the light from the end surface Wc of the wafer W is reflected by the reflection surface 432 of the mirror member 430 and reaches the lens 411. The focus adjustment lens 427 is configured to align the imaging position of the end face Wc of the wafer W with the image sensor 412. Therefore, since the imaging position of the end face Wc of the wafer W is aligned with the image pickup device 412 by the focus adjustment lens 427, both the peripheral region Wd of the surface Wa of the wafer W and the end face Wc of the wafer W in the captured image become clear. Therefore, by performing image processing on the captured image, the end face Wc of the wafer W can be inspected more accurately.

In the present embodiment, the reflected light from the lighting module 420 is reflected by the mirror member 430 so that the reflected light reflected by the reflecting surface 432 of the mirror member 430 reaches the end surface Wc of the wafer W held by the holding table 201. The illumination module 420 irradiates the surface 432 with diffused light. Therefore, the diffused light is incident on the end face Wc of the wafer W from various directions. Therefore, the end face Wc of the wafer W is uniformly illuminated as a whole. As a result, the end face Wc of the wafer W can be imaged more clearly.

In the present embodiment, the light emitted from the light source 421 is scattered by the light scattering member 422, magnified by the cylindrical lens 425, and further diffused by the light diffusing member 426. Therefore, the diffused light is incident on the end face Wc of the wafer W from various directions. Therefore, the end face Wc of the wafer W is uniformly illuminated as a whole. As a result, the end face Wc of the wafer W can be imaged more clearly.

[Other Embodiments]
Although the embodiments according to the present disclosure have been described in detail above, various modifications may be added to the above embodiments within the scope of the gist of the present invention. For example, the reflecting surface 432 may be inclined with respect to the rotation axis of the holding table 201 and may face the end surface Wc of the wafer W held by the holding table 201 and the peripheral region Wd of the back surface Wb, and may be other than the curved surface. Other shapes (eg, flat surfaces) may be exhibited.

The peripheral imaging subunit 400 may not include the focus adjusting lens 427.

The peripheral imaging subunit 400 may not include any of the light scattering member 422, the cylindrical lens 425, and the light diffusing member 426.

The inspection unit U3 may be arranged in the shelf units U10 and U11. For example, the inspection unit U3 may be provided in a cell located in the shelf units U10 and U11 corresponding to the unit processing blocks 14 to 17. In this case, the wafer W is directly delivered to the inspection unit U3 in the process of being conveyed by the arms A1 to A8.

In calculating the amount of warpage of the wafer W, an imaging module capable of imaging only the end surface Wc of the wafer W without using the peripheral imaging subunit 400 capable of imaging both the end face Wc of the wafer W and the peripheral region Wd of the surface Wa. May be used. The front surface Wa, the back surface Wb, the end surface Wc, and the peripheral region Wd of the front surface Wa of the wafer W may be separately imaged by different cameras. At least two or more of the front surface Wa, the back surface Wb, the end surface Wc, and the peripheral region Wd of the front surface Wa of the wafer W may be simultaneously imaged by one camera.

Before and after the heat treatment in step S24, the wafer inspection process may be performed by the same inspection unit U3, or the wafer inspection process may be performed by different inspection units U3.

Inspection process of the wafer W in step S 26 is not after the edge exposure processing in step S 25, before the exposure process in and step S 25 after the heat treatment in the heat treatment unit U2 (so-called PAB) in step S 24 You may go.

As shown in FIG. 28, the wafer inspection process (re-inspection process) may be performed in the inspection unit U3 between the heat treatment in step S24 and the peripheral exposure process in step S25 (step S28). At this time, in the peripheral exposure process of step S25, the exposure width may be determined based on the amount of warpage calculated in the wafer inspection process of step S28. In this case, since the exposure width is more appropriately determined according to the warp of the wafer W after the heat treatment is performed in step S24, the exposure width of the peripheral portion of the resist film R can be made more uniform. Become. Therefore, by developing the wafer W after the peripheral edge exposure process, the removal width of the peripheral edge portion can be made more uniform. At this time, it may be determined whether or not the amount of warpage calculated in the wafer inspection process in step S28 is within the allowable range. If the amount of warpage is large and unacceptable, the peripheral exposure process is not performed on the wafer W. Therefore, the wafer W for which peripheral exposure processing is difficult can be determined in advance in the peripheral exposure unit U4, and the wafer W can be excluded from the peripheral exposure processing. Therefore, it is possible to improve the processing efficiency of the wafer W.

As shown in FIG. 29, subsequent steps S24 to S27 may be performed without performing the edge rinsing process in step S23. Although not shown, the subsequent steps S26 and S27 may be performed without performing the peripheral exposure treatment of step S25 after the heat treatment in step S24.

The amount of warpage calculated in the wafer inspection process (step S21) in the inspection unit U3 may be used in the subsequent heat treatment (step S24) in the heat treatment unit U2. For example, the determination as to whether or not the wafer W is sucked against the hot plate of the heat treatment unit U2, the suction amount, the suction position, the suction pressure, the suction timing, and the like may be controlled based on the warp amount.

1 ... Board processing system (board processing device), 2 ... Coating developing device (board processing device), 10 ... Controller (control unit), 10C ... Memory (storage unit), 10D ... Storage (storage unit), 11b ... Recording medium , 14 to 17 ... Unit processing block, 30 ... Liquid supply unit (coating liquid supply unit), 40 ... Liquid supply unit (solvent supply unit), 200, 700 ... Rotation holding subsystem (rotation holding unit), 201, 701 ... Holding stand, 300 ... Front surface imaging subsystem, 400 ... Peripheral imaging subsystem (board imaging device), 500 ... Back surface imaging subsystem, 800 ... Exposure subsystem (illumination unit), 310, 410, 510 ... Camera, 411, 511 ... Lens, 412, 512 ... Imaging element, 320, 420, 520 ... Lighting module (illumination unit), 322, 421, 522 ... Light source, 422 ... Light scattering member, 425 ... Cylindrical lens, 426 ... Light diffusing member, 427 ... Focus adjustment lens, 430 ... Mirror member, 432 ... Reflective surface, M2 ... Storage unit, M3 ... Processing unit, P0 to P3 ... Profile line, Q1 to Q3 ... Warp amount, R ... Resist film (coating film), RM ... Recording Medium, RW ... Removal width, U1 ... Liquid treatment unit, U2 ... Heat treatment unit (heating part), U3 ... Inspection unit, U4 ... Peripheral exposure unit, W ... Wafer (base), Wa ... Front surface, Wb ... Back surface, Wc ... End face, Wd ... Peripheral area.

Claims (13)

By imaging the end face of the substrate to be processed by the camera while holding and rotating a substrate to be processed by the spin holder, and to acquire a captured image of the end face of the substrate to be processed,
Image processing of the captured image of the end face of the substrate to be processed is performed to acquire shape data of the end face of the substrate to be processed.
Shape data of the end surface of the reference substrate warpage is known, the obtained by image processing based on the shape data of the end face of the substrate, seen including and calculating the amount of warpage of the substrate to be processed ,
The shape data of the end surface of the reference substrate, wherein when the reference substrate is rotated by the rotary holding unit, shake including a reference value in the vertical direction of the reference substrate in the spin holder, the substrate processing method. Acquiring the captured image of the end face of the reference substrate from the camera
The method according to claim 1, further comprising image processing an image of the end face of the reference substrate to acquire shape data of the end face of the reference substrate. The reference substrate is flat and
The shape data of the end face of the reference substrate is the data of the first profile line passing through the center of the end face of the reference substrate.
The shape data of the end face of the substrate to be processed is the data of the second profile line passing through the center of the end face of the substrate to be processed.
The calculation of the warp amount of the substrate to be processed includes calculating the warp amount of the substrate to be processed based on the data of the first profile line and the data of the second profile line. Item 2. The method according to item 2. Acquiring the captured image of the end face of the substrate to be processed from the camera is an image of the end face of the substrate to be processed in a state before the solvent for dissolving the film formed on the surface is supplied to the peripheral portion. The method according to any one of claims 1 to 3, which comprises obtaining the image from a camera. Acquiring the captured image of the end face of the substrate to be processed from the camera is in a state after the solvent for dissolving the film formed on the surface is supplied to the peripheral portion and after the heat treatment is performed. The method according to any one of claims 1 to 3, which comprises acquiring an image of an end face of the substrate to be processed from a camera. Acquiring the captured image of the substrate to be processed from the camera
The method according to any one of claims 1 to 5, further comprising image processing the captured image of the substrate to be processed and inspecting the state of the substrate to be processed. A rotation holding unit configured to rotatably hold the reference substrate and the substrate to be processed, respectively.
A memory configured to store an image of the end face of the substrate to be processed, which is generated by the camera taking an image of the end face of the substrate to be processed while the substrate to be processed is rotated by the rotation holding portion. Department and
The first process of image-processing the captured image of the end face of the substrate to be processed in the storage unit to acquire the shape data of the end face of the substrate to be processed, and the shape data of the end face of the reference substrate whose warpage amount is known. And a processing unit configured to execute a second process of calculating the amount of warpage of the substrate to be processed based on the shape data of the end face of the substrate to be processed obtained by the image processing. See,
The shape data of the end surface of the reference substrate, wherein when the reference substrate is rotated by the rotary holding unit, shake including a reference value in the vertical direction of the reference substrate in the spin holder, the substrate processing apparatus. The storage unit is configured to acquire a captured image of the end face of the reference substrate from the camera.
The processing unit is configured to further perform a third process of image-processing the captured image of the end face of the reference substrate in the storage unit and acquiring the shape data of the end face of the reference substrate. Item 7. The apparatus according to item 7. The reference substrate is flat and
The shape data of the end face of the reference substrate is the data of the first profile line passing through the center of the end face of the reference substrate.
The shape data of the end face of the substrate to be processed is the data of the second profile line passing through the center of the end face of the substrate to be processed.
The apparatus according to claim 8, wherein the second process includes calculating the amount of warpage of the substrate to be processed based on the data of the first profile line and the data of the second profile line. .. The storage unit is configured to acquire an image taken from the camera of the end face of the substrate to be processed in a state before the solvent for dissolving the film formed on the surface is supplied to the peripheral portion. The apparatus according to any one of claims 7 to 9. The storage unit captures an image of the end face of the substrate to be processed from the camera in a state after the solvent for dissolving the film formed on the surface is supplied to the peripheral portion and after the heat treatment is performed. The device according to any one of claims 7 to 9, which is configured to be acquired. The storage unit is configured to acquire an image captured by the substrate to be processed from a camera.
Any of claims 7 to 11, wherein the processing unit processes an image of the substrate to be processed in the storage unit and further executes a process of inspecting the state of the substrate to be processed. The device according to item 1. A computer-readable recording medium on which a program for causing a substrate processing apparatus to execute the substrate processing method according to any one of claims 1 to 6 is recorded.