WO2018024914A1 - Filament muni d'un support - Google Patents

Filament muni d'un support Download PDF

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Publication number
WO2018024914A1
WO2018024914A1 PCT/EP2017/069949 EP2017069949W WO2018024914A1 WO 2018024914 A1 WO2018024914 A1 WO 2018024914A1 EP 2017069949 W EP2017069949 W EP 2017069949W WO 2018024914 A1 WO2018024914 A1 WO 2018024914A1
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WO
WIPO (PCT)
Prior art keywords
light
emitting diode
carrier
layer
filament
Prior art date
Application number
PCT/EP2017/069949
Other languages
German (de)
English (en)
Inventor
Korbinian Perzlmaier
Christian LEIRER
Original Assignee
Osram Opto Semiconductors Gmbh
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Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2018024914A1 publication Critical patent/WO2018024914A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting

Definitions

  • the invention relates to a filament with a carrier with
  • Light-emitting diode structures and a method for producing a filament with light-emitting diode structures are provided.
  • a carrier wherein a plurality of LED semiconductor chips are arranged on the carrier and are electrically connected in series.
  • the LED semiconductor chips are manufactured independently of the carrier.
  • An LED semiconductor chip has a housing with electrical connections. In a recess of the housing, a light-generating semiconductor layer structure is arranged. The semiconductor layer structure has two electrical contacts. The electrical Kontak ⁇ te the semiconductor layer structure are electrically connected to the electrical terminals of the housing.
  • a reflector is provided on the housing, which surrounds the semiconductor layer structure.
  • the recess is filled with a translucent potting and a conversion layer, which cover the semiconductor chip.
  • the LED semiconductor chips are mounted on an upper side of the carrier.
  • the carrier be ⁇ is of a ceramic or sapphire and formed strip-mig. After mounting on the carrier, the electrical connections of the housings of the LED semiconductor chips are electrically connected to one another and to electrical contact pins of the carrier via bonding wires or conductor tracks. The contact pins are used for electrical connection of the LED filament.
  • the object of the invention is to provide a filament with egg ⁇ nem more compact design.
  • the object of the invention is achieved by the independent claims. In the dependent claims further embodiments are given.
  • An advantage of the proposed filament is that the filament has a compact design. This is achieved by arranging not single LED components, but light-emitting diode structures without a housing on the carrier. This makes the structure more compact.
  • the carrier has mold material or is formed from molding material. This gron- machines with simple procedures compact LED filaments Herge ⁇ provides are.
  • the light-emitting diode structures are covered with a substrate, in particular grown up on a substrate.
  • the retention of the substrate on the filament simplifies the manufacturing process and increases the stiffness of the filament.
  • the substrate is transparent to the electromagnetic radiation of the LED ⁇ magnetic structures.
  • the light-emitting diode structures may be separate from each other or at least have a common layer.
  • the carrier has a stiffening structure.
  • the stiffening structure is at least partially embedded in the carrier in particular. Due to the stiffening structure, which is formed of a stiffer material than the carrier, an increased rigidity of the filament is achieved. Thereby, the carrier of the filament and thus the filament can be provided with a smaller width and / or height with the same mechanical rigidity.
  • the stiffening structure may for example be formed from a metal.
  • the thermal conductivity of the carrier is also increased by the formation of the stiffening structure made of metal.
  • the metal can be deposited in particular galvanically on the carrier or in a recess of the carrier.
  • the supply contacts of the filament are guided via plated-through holes to an underside of the carrier.
  • a Abschat ⁇ tion of a radiation side of the light-emitting diode structures, which is provided opposite to the underside of the carrier avoided.
  • two or more light-emitting diode structures may be electrically connected by corresponding connection contacts.
  • connection contact is electrically conductively connected to a p-layer of a light-emitting diode structure and to an n-layer of a further light-emitting diode structure.
  • the light-emitting diode structures have corresponding recesses in which the connection contact is made.
  • the substrate may extend over the entire length and / or width of the filament. As a result, a cover of the light-emitting diode structures is provided. In addition, the stability ⁇ formality of the filament is increased.
  • the stiffening structure may extend over at least 50% of a width and / or a length of the carrier, in particular over 70% of a width and / or a length of the carrier.
  • the stiffening structure can be divided into individual substructures, which are separated from each other or with each other are connected. Thus, it is not necessary for the stiffening structure to cover the entire width and / or length of the carrier. The wider and the longer the stiffening ⁇ structure, the stiffer the carrier is.
  • the stiffening structure can occupy at least 30% of the thickness of the carrier.
  • the stiffening structure the rest of the thickness of the support ausyogl ⁇ len substantially to the thickness of the connection contacts. This is a particular devisge ⁇ stable filament.
  • An advantage of the proposed method is that a compact filament can be produced.
  • Light-emitting diode structures are electrically coupled by the provision of recesses with a small layer thickness via the connection ⁇ contacts, in particular maral ⁇ tet in series.
  • the stiffening structure By introducing the stiffening structure into the carrier, wherein the stiffening structure is formed of a material having a higher mechanical rigidity than the carrier, overall an increased mechanical rigidity of the filament is achieved in a small design.
  • the carrier is formed from a molding material. Thereby, a simple method of manufacturing the carrier can be provided.
  • the stiffening structure is formed of metal, in particular introduced by a galvanic deposition on or in the carrier. As a result, a stable stiffening structure with a small footprint can be produced in a simple manner.
  • a plurality of light-emitting diode structures are formed on a wafer.
  • the light-emitting diode structures produce a multiplicity of filaments on the wafer. testifies. Subsequently, the wafer is divided into the individual filaments.
  • Fig. 1 shows a schematic cross section through a first
  • FIG. 2 shows a cross section through a p-plane of the light ⁇ diode structures of FIG. 1,
  • FIG. 3 shows a cross section through an n-plane of the light ⁇ diode structures of FIG. 1,
  • Fig. 5 shows a cross section through a further execution ⁇ form of a filament without a substrate
  • Fig. 6 is a plan view from below of the filament of
  • the filament 1 shows a schematic longitudinal cross section through an embodiment of a filament 1 with two light-emitting diode structures 2, 3, ie an LED filament.
  • the filament 1 has a elongated strip shape, wherein the cross-section Darge ⁇ set height is smaller than a width of the filament 1. To ⁇ the filament 1 is longer than wide or high.
  • the two light-emitting diode structures 2, 3 are arranged on a substrate 4.
  • a conversion layer 5 is provided opposite to the light-emitting diode structures ⁇ 2.3 in this embodiment.
  • the conversion layer 5 is formed out ⁇ to electromagnetic radiation of the light-emitting diode structures 2, 3 in the wavelength to move.
  • the conversion layer 5 can be dispensed with.
  • the substrate 4 can be dispensed with.
  • the light-emitting diode structures 2, 3 are formed on the substrate 4 using a herstel ⁇ averaging process.
  • the light-emitting diode structures 2, 3 comprise semiconductor layers 7, 8, which contain a pn junction 38.
  • the pn junction 38 is shown as a dashed line.
  • the pn junction 38 represents an active region, which is formed upon application of an electrical voltage to see to generate electromagnetic Strah ⁇ lung.
  • the light-emitting diode structures 2, 3 have pn semiconductor layer structures 7, 8.
  • the Leuchtdiodenstruktu ⁇ ren 2, 3 have in the embodiment, a first layer 6, which is disposed on the substrate. 4
  • the first layer 6 which is disposed on the substrate. 4
  • Layer 6 has a low electrical conductivity or is designed to be electrically insulating.
  • the first layer 6 may be a buffer layer and may be formed from a semi-conductor material ⁇ .
  • a second layer 7 is arranged on the first layer 6, a second layer 7 is arranged.
  • the second layer 7 is formed of a semiconductor material, has a negative
  • ⁇ det which represents the active zone.
  • the active zone is formed from ⁇ to when applying an electrical voltage a to generate electromagnetic radiation.
  • the light-emitting diode structures are light-emitting diodes or laser diodes.
  • the light-emitting diode structures 2, 3 are formed from a semiconductive material system as a pn structure.
  • the Materialsys ⁇ tem can, for example elements of the main chemical groups III, V, II and VI, in particular of III-V or II- VI semiconductor material systems may be formed.
  • the semiconductor layers are, for example, epitaxially strat on a sub-4, made for example of sapphire, beispielswei ⁇ se with metal-organic vapor phase epitaxy or molecular strahlexpitaxie deposited.
  • the substrate 4 is transparent to the electromagnetic radiation of the Leuchtdiodenstruktu ⁇ Ren 2.3.
  • the semiconductor layers may be formed, for example, from the material system indium gallium aluminum nitride or indium gallium aluminum phosphide.
  • the active zone can be formed as a simple pn layer or with quantum well structures.
  • the light-emitting diode structures may have further layers, which are not mentioned in this schematic representation.
  • the first and second light-emitting diode structures 2, 3 are integrally connected to one another via the first layer 6.
  • the light-emitting diode structures 2, 3 may also be separate from one another.
  • a first insulating layer 9 is applied on the third layer 8.
  • the first insulation layer 9 is pierced in the left Be ⁇ rich by a first via 10.
  • the first via 10 is from a bottom 11 a support 12 to the second layer 7 of the first light ⁇ diode structure 2 out.
  • the first through-connection 10 is surrounded by the first insulation layer 9 and electrically insulated from the third layer 8. Laterally adjacent to the first fürorialie ⁇ tion 10, a first electrical connection contact 13 is spaced ⁇ provided, on a top surface 14 of the carrier
  • the first connection contact 13 extends in a longitudinal direction of the filament 1 from the first light-emitting diode structure 2 to the second light-emitting diode structure 3.
  • the first connection contact 13 has a first contact region 15 which adjoins the third layer 8 of the first light-emitting diode structure 2 and is free of the first insulation layer 9 , Other regions of the first conjunction contact 13 which adjoin the first and second Leuchtdio ⁇ den réelle 2, 3, are covered by the first insulation layer.
  • the connecting contact 13 has ei ⁇ NEN second contact region 16, which projects into a recess of the second light emitting diode structure 3 and extending into the plane of the second layer 7 of the second light-emitting structure. 3
  • the second contact region 16 is also free of the first insulating layer 9.
  • the electrical connection ⁇ contact 13 is electrically conductive and formed, for example, from Me ⁇ tall.
  • the first connection contact 13 provides an electrically conductive connection between the third
  • the first connection contact 13 is partially arranged in a recess of the upper side of the carrier 8.
  • a second through-connection 17 is provided which is guided from the lower side 11 of the carrier 12 to the upper side 14 of the carrier 12 and to the third layer 8 of the second light-emitting diode structure 3.
  • the second via 17 is also made of an electrically conductive material, such as metal.
  • the second is Through-connection 17 is electrically conductively connected only to the third layer 8 of the second light-emitting diode structure 3.
  • a second Isolati- ons Mrs is provided 18, which is disposed on the first insulating layer 9 and also ⁇ tierungen 10, 17 between the plated- through and the carrier 12 and is formed between the connection contact 13 and the support 12th
  • ⁇ covers the second insulating layer 18, the top 14 of the carrier 12.
  • the second insulating layer 18 in the region of the first insulation layer. 9 can be dispensed with the second insulating layer 18 when the Trä ⁇ ger 12 consists of an electrically insulating material.
  • the carrier 12 may comprise or consist of, for example, molding material such as silicone, epoxy or photoresist.
  • the stiffening structure 19 extends along the longitudinal direction of the filament 1 between the first and the second via 10, 17.
  • the stiffening structure 19 is formed from a material that has a higher mechanical rigidity than the material of the carrier 12.
  • the stiffening structure 19 may comprise or be formed from metal, in particular nickel.
  • the stiffening structure 19 made of metal, for example, can be electrodeposited.
  • the stiffening structure 19 may extend at least over 50% of a width and / or a length of the carrier 12. In particular, the stiffening structure 19 may extend over at least 70% of a width and / or a length of the carrier. In addition, depending on the chosen embodiment, the stiffening structure 19 at least over 10% of the thickness of
  • the stiffening structure 19 may extend at least over 50% of the thickness of the carrier 12 or more.
  • the reinforcing structure may for example have a layer thickness in the range of 100 ym.
  • the underside 11 of the carrier 12 is also covered with the second insulating layer 18 ⁇ .
  • the first and the second plated through-hole 10, 17 are guided through the second insulating layer 18 of the underside 11 of the carrier 12 and thus electrically contacted from the underside of Trä ⁇ gers 12 ago.
  • the two light-emitting structures 2, 3 are indeed being formed ⁇ integrally over the first layer 6, 6, however, the first layer has a correspondingly low electrical conductivity, so that despite the ge ⁇ common first layer 6 is an electrical series connection of two LEDs structures 2 , 3 is achieved by the kauskon- contact 13.
  • the first and second via 10, 17 may be made of different contact layers and fabricated in the same deposition processes.
  • a first contact layer 20 of the plated-through holes 10, 17, which adjoins the light-emitting diode structures 2, 3, can be produced from the same material as the connection contact 13 and have the same layer thickness as the connection contact 13.
  • a second contact layer 21 may be formed of the same material as the stiffening structure 19 and deposited simultaneously with the stiffening structure 19.
  • an external contact 22 may be formed, which terminates the plated-through holes 10, 17.
  • the external contact 22 may be made of the same material as the first portion 20.
  • FIG. 1 can also be formed without a continuous first layer 6, so that even in the embodiment of FIG. 1 only two light-emitting diode structures 2, 3 arranged separately from one another can be provided. In addition, depending on the selected embodiment, more or less than four light-emitting diode structures may be formed separately from each other.
  • FIG. 2 shows a cross section through a further embodiment of a filament 1, wherein in this embodiment four light-emitting diode structures 2, 3, 23, 24 are provided.
  • the first, second, third and fourth light-emitting diode structures 2, 3, 23, 24 are identically formed and connected to each other in one piece via the first layer 6.
  • the construction of the filament of FIG. 2 corresponds substantially to the structure of the Fila ⁇ ment of Fig. 1, wherein not only two light-emitting structures 2, 3, but four light emitting structures 2, 3, 23, 24 are electrically connected in series.
  • the third layer 8 of the second light-emitting structure 3 is electrically conductively connected via a second connecting contact 25 with a second layer 7 of the third light-emitting structure 23rd
  • the second connection contact 25 has a first contact region 15, which is connected to the third layer 8 of the second light-emitting diode structure 3.
  • the second connection contact 25 has a two ⁇ th contact region 16, which is connected to the second layer 7 of the third light-emitting diode 23.
  • a third connection contact 26 is provided, which connects the third light-emitting diode structure 23 with the fourth light-emitting diode structure 24.
  • the third connection contact 26 has a first contact region 15, which is connected to the third layer 8 of the third light-emitting diode structure 23. 26 In addition, the third connection contact on a second contact ⁇ region 16, which is connected to the seventh layer 7 of the fourth light emitting structure 24th In addition, a third layer of the fourth light-emitting diode structure 24 is electrically conductively connected to the second through-connection 17.
  • the first, second, third and fourth layers of the light-emitting diode structure structures are, for example, of identical design and Queen ⁇ NEN be produced simultaneously. Depending on the selected embodiment, the layers of the light-emitting diode structures can also be designed differently.
  • the stiffening ⁇ structure 19 extends between the first and the second through-connection 10, 17 along the carrier 12.
  • the remaining Schichtauf ⁇ construction corresponds to the layer structure of FIG. 1st
  • LED filaments having three or more than four light-emitting diode structures may also be used.
  • the light-emitting diode structures are electrically connected in series.
  • the light-emitting diode structures can also be electrically connected in parallel.
  • the light-emitting diode structures can also be electrically connected in parallel and serially by means of connection contacts. For example, two or more rows of juxtaposed light emitting diode structures may be provided.
  • FIG. 3 shows a schematic cross section through the arrangement of FIG. 2 in the third layer 8, which is electrically conductive and p-doped.
  • the vias 10, 17 extend through the third layer 8.
  • the first contact portions 15 of the connection contacts ⁇ 13,25,26 each adjoin the third layer 8 of the light-emitting structures 2, 3, 23, 24.
  • the second contact regions 16 are defined by the third Schich ⁇ th 8, wherein the second contact portions 16 are electrically insulated by the first insulating layer 9 relative to the third layer 8.
  • middle pieces 27 of the connection contacts 13,25,26 are guided through the third layer 8. The middle pieces 27 are electrically insulated by the insulating layer 9 against the third layer 8.
  • the first and the two ⁇ th contact areas 15, 16 of the connection contacts are the same formed wide in the Z-direction as the light emitting diode structures.
  • the first and second contact regions 15, 16 of the connec ⁇ tion contacts also have a smaller width.
  • FIG. 4 shows a cross section through the arrangement of FIG. 2 in the plane of the second layer 7, which is electrically conductive and n-doped. In the second layer 7 protrudes the first via 10.
  • the second contact regions 16 protrude into the second layers 7 and are electrically connected to the second layers 7.
  • the second via 17 terminates in the third layer 8 and thus does not protrude into the second layer 7.
  • Fig. 5 shows a cross section in the plane of the first
  • the first layer 6 is formed continuously over all light-emitting diode structures 2, 3, 23, 24.
  • Fig. 6 shows a cross section through a further exporting ⁇ approximate shape of a filament 1, wherein the embodiment of FIG. 6 is formed substantially in accordance with the embodiment of Fig. 2, except that the light-emitting diode structures 2, 3, 23, 24 are separated from each other, since no common ers ⁇ te layer 6 is provided.
  • the substrate 4 has been removed.
  • the conversion layer 5 is arranged directly on the light-emitting diode structures 2, 3, 23, 24. Depending on the selected execution ⁇ form can also be dispensed with the conversion layer 5 ⁇ to.
  • connection contacts can comprise a plurality of separate firstmaschinebe ⁇ rich 15 and / or several separate second contactless areas 16th
  • the plurality of first and second contact regions 15, 16 may be distributed in width and / or in the length of the carrier 12.
  • further layers and / or insulation layers and / or mirror layers may be provided in order to improve the functionality of the filament and in particular the light-emitting diode structures.
  • connection contacts, the first sections 20 of the plated-through holes and / or the external contacts 22 can have platinum, gold, titanium, silver.
  • the first and / or the second insulation layer 9, 18 may ⁇ example, be formed of silicon oxide.
  • the recesses for the introduction of the plated-through holes 10, 17 and the second contact regions 16 into the light-emitting diode structures can be introduced by means of etching processes.
  • the walls of the recesses can be covered with the first insulating layer 9.
  • the filaments may be processed on a wafer with a plurality of filaments simultaneously depending on the selected embodiment and are subsequently divided into individual Fila ⁇ elements. Fig.
  • the carrier 12 has a rectangular basic shape, wherein the first and the second plated-through holes 10, 17 are arranged in the opposite end regions. Between the two vias 10, 17, the stiffening structure 19 is arranged. In the embodiment presented Darge ⁇ 19, the stiffening structure in the same width as the carrier 12th In addition, extends the stiffening structure 19 over 80% of the length of the carrier 12th
  • Fig. 8 shows a plan view of the underside 11 of a direct WEI embodiment of a filament 1, wherein the auctioning ⁇ Fung structure 19 has the same length as in Fig. 7, but has a smaller width than the support 12.
  • the stiffening structure 19 has a width that corresponds to at least 80% of the width of the carrier 12.
  • Figures 7 and 8 is the
  • Stiffening structure 19 is formed as a one-piece surface having a substantially rectangular base.
  • Fig. 9 shows a plan view of an underside 11 of a support 12 of a filament 1, wherein said stiffening structural ⁇ structure 19 in the form of two sub-structures 31, 32 is formed.
  • the two partial structures 31, 32 are in the form of elongate strips.
  • the partial structures 31, 32 are arranged parallel to one another and parallel to the longitudinal extent of the filament 1.
  • the partial structures 31, 32 extend between the plated-through holes 10, 17 over at least 80% of the length of the filament 1.
  • the two partial structures 31, 32 are arranged at a distance from the sides of the carrier 12.
  • the partial structures 31, 32 are identical in the illustrated embodiment.
  • Each substructure 31, 32 has a width which is smaller than one half of the width of the carrier 12.
  • the width of the partial structures 31, 32 may be one third of the width of the carrier 12.
  • Fig. 10 shows a plan view of an underside 11 of a support 12 of a filament 1, wherein said stiffening structural ⁇ structure 19 in the form of three substructures 31, 32, 33 is formed.
  • the substructures 31, 32, 33 are excluded as forms stripes parallel to one another and parallel to the L Lucasserstre ⁇ ckung of the filament. 1
  • the substructures have a distance equal to each other and are aligned symmetrically over the width of the carrier 12.
  • Fig. 11 shows a plan view of an underside 11 of a support 12 of a filament 1, wherein the at stiffening structural ⁇ structure in the form of three substructures 31, 32, 33 according to Fig. 10 19, wherein also the cross struts 34 between the substructures 31, 32, 33 are provided.
  • seven transverse struts 34 are provided with sliding ⁇ chem distance from each other. Each transverse strut 34 connects the three substructures 31, 32, 33.
  • FIG. 12 shows a further embodiment in which three partial structures 31, 32, 33 according to FIG. 10 are provided, however, further transverse struts 35 are connected to the partial structures 31, 32, 33.
  • the further transverse struts 35 are not perpendicular, but at an angle inclined to the L Lucasserstre ⁇ ckung of the partial structures 31, 32, 33 are arranged.
  • four further transverse struts 35 are provided, which are interconnected in the form of a zigzag line.
  • Fig. 13 shows a plan view of a further execution ⁇ form of a filament 1, wherein the stiffening structure is formed in the form of a plurality of interconnected ring structures 36 19.
  • the ring structures 36 are formed in such a way that in each case two ring structures 36 adjacent to each other, wherein each two adjacent
  • Ring structures meet in the middle of another ring.
  • the ring structures 36 are arranged parallel to a longitudinal direction of the filament 1 between the plated-through holes 10, 17.
  • FIG. 14 shows a further embodiment in which two partial structures 31, 32 are arranged in the form of elongated strips, wherein the two partial structures are connected to one another via crossed additional transverse struts 35 in each case in the end regions.
  • a company logo 37 made of the material of the substructure is introduced into the carrier 12 in a central area.
  • the company logo 37 may have a different height he in the Y direction than the partial structures 31,32 and in particular have a smaller height than the partial structures 31,32.
  • various forms of partial structures and combinations of partial structures may also be provided.
  • Fig. 15 shows a schematic top view in a zx plane on a wafer 39 which is formed for example of silicon, sapphire, silicon carbide or gallium nitride or another suitable material ⁇ ge.
  • the wafer 39 may be formed of the same material as the substrate 4.
  • a pn-type semiconductor layer structure 7, 8 having an active layer with a pn junction 38 for generating electromagnetic radiation is deposited.
  • the pn semiconductor layer structure 7, 8 can be produced by means of epitaxial deposition methods.
  • other methods for producing a pn-type semiconductor layer structure 7, 8 with a pn junction 38 on the wafer 39 may also be used.
  • the pn semiconductor layer structure 7, 8 can be produced with the pn junction 38 on an auxiliary carrier, subsequently released from the auxiliary carrier and transferred to the wafer 39.
  • FIG. 16 shows a schematic partial cross section in a y-x plane through the wafer 39, on which the pn semiconductor layer structure 7, 8 with the pn junction 38 is arranged.
  • a first layer 6 is provided as a buffer layer in the example shown.
  • the structure of the structure is shown below using the example of two light-emitting diode structures 2, 3, wherein the wafer 39 with the semiconductor layer structure 7, 8 has a multiplicity of
  • FIG. 17 shows a partial cross section in the yx plane through two light-emitting diode structures 2, 3 of the wafer 39 with the semiconductor layer structure 7, 8, recesses 40, 41, 42, 43, 44 being introduced into the pn semiconductor layer structure 7, 8.
  • a multiplicity of recesses 40, 41, 42, 43, 44 are introduced into the pn-semiconductor layer structure 7, 8 of the wafer 39 in order to be able to produce a plurality of light-emitting diode structures 2, 3.
  • the first recess 40 is guided through the third and the second layer 7, 8 to the first layer 6.
  • the second recess 41 is laterally spaced from the first recess 40 and through the third layer 8 and through the pn junction 38 to the second
  • the third recess 42 is guided laterally be ⁇ abstandet from the second recess 41 and by the third and the second layer to the first layer 7,8. 6
  • the fourth recess 43 is laterally spaced from the third recess 42 and passed through the third layer 8 and through the pn junction 38 to the second layer 7.
  • the fifth recess 44 is laterally spaced from the fourth recess 43 and guided through the third and the second layer 7, 8 to the first layer 6.
  • the fifth recess 44 merges into a further first recess 40.
  • the third recess 42 separates the second and the third in the x-direction
  • the first recess 40 and the fifth recess 44 separate in the x-direction, the first and the second Leuchtdio ⁇ den Jardin 2.3 of adjacent light-emitting diode structures. In the z-direction, the recesses 40, 41, 42, 43, 44 may extend over the entire wafer 39.
  • Figure 18 shows the partial cross-section of the figure according to the up take 17 ⁇ and patterning a first insulating layer 9.
  • the first insulating layer 9 is formed so that ei ⁇ ne first contact surface 45 remains free to the second layer 7 in the region of the second recess 41st
  • a second contact surface 46 remains to the third layer 8 between the second recess 41 and the third recess 42 in the region of the first light-emitting diode structure 2 free.
  • the first insulation layer 9 is also designed so that a third contact surface 47 to the second layer 7 in the region of the fourth recess 43 remains free.
  • a fourth contact surface 48 to the third layer 8 between the fourth recess 43 and the fifth recess 44 in the region of the second light-emitting diode structure 3 remains free.
  • FIG. 19 shows the partial cross section of FIG. 18, wherein an electrically conductive first through-connection 10 is arranged in the second recess 41 and on the first contact surface 45.
  • a first connection contact 13 is arranged on the second and the third contact surface 46, 47 and in the third recess 42 and in the fourth recess 43.
  • Connecting contact 13 connects the third layer 8 of the ers ⁇ th light emitting structure 2 electrically connected to the second layer 7 of the second light-emitting structure 3.
  • an electrically conductive second via 17 is disposed in the fifth recess 44 and the fourth contact surface 48 .
  • a second insulation layer 18 is provided, which electrically separates the first connection contact 13 from the first through-connection 10 and from the second through-connection 17.
  • the second isolati ⁇ onstik 18 is covered with a carrier 12th
  • the carrier 12 is formed of a molding material.
  • the Trä ⁇ ger 12 may be formed of silicone, epoxy or plastic.
  • the carrier forms 12 When the carrier forms 12 overall of an electrically insulating material can be verzich ⁇ tet on the second insulation layer eighteenth
  • the carrier 12 has been applied, for example, by a compression molding method or by an injection molding method.
  • the first and the second via 10, 17 are formed from two contact layers 20, 21 having differing ⁇ che materials.
  • the plated-through holes 10, 17 extend
  • the carrier 12 is also formed laterally of the first connection contact 13 between the plated-through holes 10, 17.
  • the carrier 12 may cover the entire area of the wafer except for the vias.
  • FIG. 20 shows further method steps which are optional.
  • a recess 49 is introduced into the carrier 12.
  • the recess 49 may also already formed during the manufacture of the carrier 12 who ⁇ .
  • corresponding tools are used to form the recess 49 in the manufacture of the carrier 12.
  • the recess 49 is formed between the plated-through holes 10, 17 and spaced from the plated-through holes 10, 17 in the region of the first and the second light-emitting diode structure 2, 3.
  • the recess 49 is then filled with a material 19 having a higher rigidity than the Ma ⁇ TERIAL the wearer 12th
  • the recess can ⁇ filled 49 with a metallic material 19 the advertising.
  • the metallic material 19 can be introduced into the recess 49, for example, egg ⁇ nem galvanic process.
  • the material 19 represents a stiffening structure.
  • a conversion layer 5 can be applied to the wafer 39 opposite to the semiconductor layer structure 7, 8.
  • the conversion layer 5 is formed so as to shift the wavelength of the pn junction 38, he testified ⁇ electromagnetic radiation at least partially.
  • Fig. 21 shows a schematic plan view of a Sectionaus ⁇ section of the wafer 39 according to the process status of FIG. 20 having a plurality of light emitting structures 2,3.
  • the wafer 39 is divided into individual filaments 1, each filament ment has two light-emitting diode structures 2,3, as shown in Fig. 20 or in Fig. 1.
  • the filaments explained in FIGS. 1 to 14 can be produced.
  • other methods may be used.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un filament (1) muni d'un support (12). Au moins deux structures de diodes électroluminescentes (2, 3) sont disposées sur le support (12), lesquelles comportent une structure de couche semi-conductrice p-n (6,7) pourvue d'une zone active (38) destinée à générer un rayonnement électromagnétique. Une couche p (8) de la première structure de diode électroluminescente (2) est reliée électriquement à un contact de connexion électrique (13). Une couche n (7) de la seconde structure de diode électroluminescente (3) est reliée électriquement au contact de connexion électrique (13). Le contact de connexion électrique (13) est disposé sur un premier côté (14) du support (12) et deux contacts d'alimentation (10, 17) sont prévus pour faire fonctionner le filament (1) sur le support (12). Le premier contact d'alimentation est relié électriquement à une couche n (7) de la première structure de diode électroluminescente (2) et le second contact d'alimentation (17) est relié électriquement à une couche p (8) de la seconde structure de diode électroluminescente (3). De plus, l'invention concerne un procédé de production d'un filament.
PCT/EP2017/069949 2016-08-05 2017-08-07 Filament muni d'un support WO2018024914A1 (fr)

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Application Number Priority Date Filing Date Title
DE102016114571.8 2016-08-05
DE102016114571.8A DE102016114571A1 (de) 2016-08-05 2016-08-05 Filament mit einem träger

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120074441A1 (en) * 2010-09-24 2012-03-29 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
DE102013206186A1 (de) * 2013-04-09 2014-10-09 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
US20150255440A1 (en) * 2014-03-06 2015-09-10 Epistar Corporation Light-emitting device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008011848A1 (de) * 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
DE102012112302A1 (de) * 2012-12-14 2014-06-18 Osram Opto Semiconductors Gmbh Anzeigevorrichtung und Verfahren zur Herstellung einer Anzeigevorrichtung

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120074441A1 (en) * 2010-09-24 2012-03-29 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
DE102013206186A1 (de) * 2013-04-09 2014-10-09 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
US20150255440A1 (en) * 2014-03-06 2015-09-10 Epistar Corporation Light-emitting device

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