WO2018018908A1 - Ensemble et cellule de batterie solaire, et procédé de préparation pour ceux-ci - Google Patents
Ensemble et cellule de batterie solaire, et procédé de préparation pour ceux-ci Download PDFInfo
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- WO2018018908A1 WO2018018908A1 PCT/CN2017/078348 CN2017078348W WO2018018908A1 WO 2018018908 A1 WO2018018908 A1 WO 2018018908A1 CN 2017078348 W CN2017078348 W CN 2017078348W WO 2018018908 A1 WO2018018908 A1 WO 2018018908A1
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- Prior art keywords
- solar cell
- back electrode
- laser cutting
- line
- main gate
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- 238000002360 preparation method Methods 0.000 title description 5
- 229910000679 solder Inorganic materials 0.000 claims abstract description 32
- 238000013461 design Methods 0.000 claims abstract description 23
- 238000003698 laser cutting Methods 0.000 claims description 50
- 238000007639 printing Methods 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000001816 cooling Methods 0.000 claims description 3
- 238000005476 soldering Methods 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000005520 cutting process Methods 0.000 abstract description 3
- 238000003466 welding Methods 0.000 abstract description 2
- 238000003475 lamination Methods 0.000 abstract 1
- 238000005457 optimization Methods 0.000 description 11
- 229910021419 crystalline silicon Inorganic materials 0.000 description 9
- 238000000034 method Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000004070 electrodeposition Methods 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
- H01L31/188—Apparatus specially adapted for automatic interconnection of solar cells in a module
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the invention relates to a solar cell panel assembly, in particular to a solar cell sheet and assembly and a preparation process thereof.
- a wedge electrode for crystal silicon solar cell connection ZL201210106034XCN
- a wedge electrode for crystal silicon solar cell connection which is characterized.
- the electrode wedge segment and the electrode segment are connected together, the electrode wedge segment is in contact with the front surface of the crystalline silicon solar cell sheet and is welded together, the electrode segment and the crystalline silicon solar cell sheet The back side is in contact and welded together.
- the object of the present invention is to provide a solar cell sheet, including a single crystal, polycrystalline or quasi-single crystal battery, especially a high-electricity parameter, high-performance solar cell, which can be used for subsequent laser cutting, and using a solder paste to cut
- the screen printing graphic design of the cell stack production assembly can increase the relative power of the component by at least 2% to solve the problem that the higher the optical performance of the prior art, the higher the system electrical loss.
- the invention only needs to make a small modification of the probe system of the IV test device of the solar cell sheet, has small changes to the battery production line, and does not increase the production cost of the battery end, and is an easy-to-implement, low-cost new battery. .
- a solar cell sheet in which a main gate line of a solar cell sheet and a back electrode of a back surface thereof are alternately arranged, in place of a design in which the previous main gate line and the back electrode overlap in the same plane.
- the solar cell sheet is divided into a plurality of solar cell slices by laser cutting lines, each of the solar cell slices having at least one main gate line and one back electrode, and the main grid line is adjacent to the solar cell slice parallel to the laser cutting On one side of the line direction, the back electrode is adjacent to the other side of the solar cell slice parallel to the direction of the laser cutting line.
- the main gate lines on each of the solar cell slices are close to the same side.
- the shortest linear distance between the main grid line and the laser cutting line is not more than 0.8 mm except for the main grid line near the solar cell frame.
- the shortest linear distance between the back electrode and the laser cutting line is not more than 0.8 mm except for the back electrode near the solar cell frame.
- the shortest linear distance between the main grid line near the solar cell frame and the solar cell frame parallel to the main grid line direction does not exceed 0.8 mm.
- the shortest linear distance between the back electrode adjacent to the solar cell frame and the solar cell frame parallel to the direction of the back electrode does not exceed 0.8 mm.
- the width of the main gate line does not exceed 1 mm.
- the width of the back electrode does not exceed 1 mm.
- a solar cell module using a solar cell chip comprising at least two solar cell slices, the back electrode of the upper solar cell slice and the main grid line of the next solar cell slice are abutted, and the tin is coated at the abutment The paste is connected.
- the solder paste has a thickness of 0.15 to 0.5 mm.
- a preparation process of a solar cell module using a solar cell sheet comprising the following steps:
- the solar cell chip is subjected to a splitting operation to be divided into individual solar cell slices;
- the solder paste may be performed simultaneously with the printing of the main gate line and the back electrode of the solar cell in step 2), or may be performed after the end of step 4).
- the solar cell slices can be stacked on top of each other and coated with solder paste at the joints.
- the connection is cured by heating and re-cooling.
- This printing graphic design is different from the existing traditional battery design.
- the main grid line and the back electrode of the solar cell slice are not in the upper and lower overlapping positions, but are staggered. design.
- the solder paste can be applied to the contact surface of the main grid line and the back electrode of the battery sheet by printing, spraying, etc., after applying the solder paste.
- the solar cell slice is welded and connected by infrared heating or hot air heating.
- the solder paste can be applied to the contact surface of the main grid line and the back electrode of the battery sheet by printing, spraying, etc., after applying the solder paste and then according to the assembly.
- the solar cell slice is welded and connected to form a component by infrared heating or hot air heating.
- the conventional component manufacturing adopts a method in which a solder ribbon and a bus bar are connected to the internal solar cell sheet, and the system has higher electrical loss of the system for the battery sheet with better optical performance.
- the idea of the present invention is to design a screen printing pattern of a solar cell that can be used for laser cutting, and to solder the cut cell sheet by solder paste, thereby reducing the current of the single cell and causing electrical loss of the component system. cut back.
- the package loss of the component can be relatively reduced by 85%-93%.
- the present application adopts a design in which the main gate line of the solar cell sheet and the back electrode of the back surface thereof are alternately arranged, instead of overlapping the previous main gate line and the back electrode in the same plane, so that When the top and bottom stacking design is carried out, the shading surface can be reduced as much as possible to improve the power generation efficiency of the battery.
- the front surface area of ordinary silicon-based batteries is about 7%.
- the solder paste is used in the present invention, so the width of the electrodes can be smaller than that of the conventional battery sheets.
- the current design is 1 to 1.4 mm.
- the design is No more than 1mm, the positive electrode area is reduced by 30% to 40%, which can reduce the shading loss of the front main grid of the cell and improve the output power of the component;
- the battery chip spacing is generally 2 ⁇ 3mm, and in this application, the stacking method for component connection can omit the spacing of 2 ⁇ 3mm, taking 60 battery slices as an example, with 6 batteries The chip slice is connected, and the 10 cell module is used as a solar cell unit.
- the method of the present application can greatly reduce the occupied area of the solar cell unit. If the same area is used, the design of 60 pieces can be used for laying more by the present application.
- FIG. 1 is a schematic structural view of a front surface of a solar cell sheet of the present invention.
- FIG. 2 is a schematic structural view of a back surface of a solar cell sheet of the present invention.
- FIG. 3 is a partially enlarged schematic view showing a portion of a main grid line and a laser cutting line of a solar cell sheet of the present invention
- FIG. 4 is a schematic structural view of a prior art solar cell module
- FIG. 5 is a schematic structural view of a solar cell module of the present invention.
- Fig. 6 is a view showing the effect of the solar battery module of the present invention after connection.
- a solar cell sheet using a new printed pattern the main gate line 2 of the solar cell sheet 1 and the back electrode 3 on the back side thereof are alternately arranged, in place of the previous main gate line 2 and the back electrode 3 overlapping in the same plane. design.
- the solar cell sheet is divided into a plurality of solar cell slices 5 by laser cutting lines 4, each of which has at least one main gate line 2 and one back electrode 3, and the main grid line 2 is adjacent to the solar cell slice 5.
- the back electrode 3 is adjacent to the other side of the solar cell slice 5 in the direction parallel to the laser cutting line 4.
- the main gate lines 2 on each of the solar cell chips 5 are close to the same side.
- the shortest linear distance between the main grid line 2 and the laser cutting line 4 is 0.8 mm except for the main grid line 2 near the frame of the solar cell sheet 1.
- the shortest linear distance between the back electrode 3 and the laser cutting line 4 was 0.8 mm except for the back electrode 3 near the frame of the solar cell sheet 1.
- the shortest linear distance between the main grid line 2 near the frame of the solar cell 1 and the frame of the solar cell 1 parallel to the direction of the main grid line 2 is 0.8 mm.
- the shortest linear distance between the back electrode 3 near the frame of the solar cell 1 and the frame of the solar cell 1 parallel to the direction of the back electrode 3 was 0.8 mm.
- the width of the main gate line 2 is 1 mm.
- the back electrode 3 has a width of 1 mm.
- the solar cell sheet 1 is divided into a plurality of solar cell slices 5 by laser cutting lines 4, each of which has at least one main gate line 2 and one back electrode 3, and the main grid line 2 is close to the solar cell slice. 5 is parallel to the side of the laser cutting line 4, and the back electrode 3 is adjacent to the other side of the solar cell slice 5 in the direction parallel to the laser cutting line 4.
- the main gate lines 2 on each of the solar cell chips 5 are close to the same side.
- the shortest linear distance between the main grid line 2 and the laser cutting line 4 is 0.1 mm except for the main grid line 2 near the frame of the solar cell sheet 1.
- the shortest linear distance between the back electrode 3 and the laser cutting line 4 was 0.1 mm except for the back electrode 3 near the frame of the solar cell sheet 1.
- the shortest linear distance between the main grid line 2 near the frame of the solar cell sheet 1 and the frame of the solar cell sheet 1 parallel to the main grid line 2 is 0.1 mm.
- the shortest linear distance between the back electrode 3 near the frame of the solar cell 1 and the frame of the solar cell 1 parallel to the direction of the back electrode 3 was 0.1 mm.
- the width of the main gate line 2 is 0.1 mm.
- the back electrode 3 has a width of 0.1 mm.
- the position does not exceed 0.8mm and 1mm, the actual excess will definitely leave room for it.
- the laser has a region, so here 0.1mm is used, of course, 0.05mm or 0.01mm can also be used.
- This printed graphic design is different from the existing conventional battery design.
- the front and back electrodes of the battery sheets are not in the upper and lower overlapping positions, but are staggered.
- the solder paste can be applied to the front or back electrode of the battery sheet by printing, spraying, etc., after applying the solder paste, and then according to the battery piece in the assembly.
- the typesetting is required to be typeset, the battery piece is welded and connected by infrared heating or hot air heating.
- the solar cell sheet 1 is divided into four solar cell slices by three laser cutting lines, each of which has at least one main gate line 2 and one back electrode 3, and the main grid line 2 is close to the solar cell.
- the slice 5 is parallel to one side of the direction of the laser cutting line 4, and the back electrode 3 is adjacent to the other side of the solar cell slice 5 in the direction parallel to the laser cutting line 4.
- the main gate lines 2 on each of the solar cell chips 5 are close to the same side.
- the arrangement of the main grid lines 2 on the same side may also be replaced by the fact that the main grid lines 2 on the solar cell slice 5 are close to the intermediate position, and the main grid line 2 of each solar cell slice 5 is close to the center of the solar cell sheet 1.
- the laser cutting line 4 is parallel to the laser cutting line 4, and the back electrode 3 is away from the center laser cutting line 4 side of the solar cell 1 and parallel to the laser cutting line 4.
- the shortest linear distance between the main grid line 2 and the laser cutting line 4 is 0.45 mm except for the main grid line 2 near the frame of the solar cell sheet 1.
- the shortest linear distance between the back electrode 3 and the laser cutting line 4 is 0.45 mm, except for the back electrode 3 near the frame of the solar cell sheet 1.
- the shortest linear distance between the main grid line 2 near the frame of the solar cell sheet 1 and the frame of the solar cell sheet 1 parallel to the direction of the main grid line 2 is 0.45 mm.
- the shortest linear distance between the back electrode 3 near the frame of the solar cell 1 and the frame of the solar cell 1 parallel to the direction of the back electrode 3 was 0.45 mm.
- the width of the main gate line 2 is 0.2 mm.
- the back electrode 3 has a width of 0.5 mm.
- the main grid line 2 is designed continuously, and can be segmented according to actual needs; the back electrode is the same.
- the thickness of the main gate line 2 and the back electrode 3 can be printed according to the general process requirements of the current screen printing of the battery sheet, and there is no special requirement. Currently, the printing thickness is generally 12 to 25 um.
- the laser cutting line 4 has a width of 0.1 to 1.6 mm.
- the groove width of the battery sheet may vary according to the size of the laser spot, but will not exceed twice the width of the cutting line;
- the distance between two adjacent main grid lines 2 is the width of each solar cell slice.
- a wedge electrode for connecting a crystalline silicon solar cell characterized in that it comprises a electrode wedge segment and a electrode segment, the electrode wedge segment and the electrode segment are connected together, and the electrode wedge segment is in contact with the front surface of the crystalline silicon solar cell sheet And soldered together, the electrode segments are in contact with the back side of the crystalline silicon solar cell sheet and soldered together.
- a solar cell module using a laminated design comprising at least two solar cell slices 5, the back electrode 3 of the upper solar cell slice 5 and the main grid line 2 of the next solar cell slice 5 are in contact with each other
- the solder paste 6 is applied to the connection.
- the back electrode 3 and the main gate line 2 on each of the solar cell chips 5 are alternately arranged.
- the back electrode 3 on each of the solar cell slices 5 is adjacent to one side of the solar cell slice 5, and the main gate line 2 is adjacent to the other side of the solar cell slice 5.
- the shortest straight line distance between the back electrode 3 and the main grid line 2 and the solar cell slice 5 on each solar cell slice 5 in a direction parallel to the main gate line 2 is not more than 0.8 mm.
- the solder paste 6 has a thickness of 0.15 to 0.5 mm.
- the solder paste 6 can be applied to the abutment of the main gate line 2 and the back electrode 3 of the solar cell slice 5 by printing, spraying, etc., and the solder paste is applied. After 6th, according to the typesetting requirements of the solar cut cell sheet 5 in the module, the solar cell slice 5 is welded and connected to form a component by infrared heating or hot air heating.
- a wedge electrode for connecting a crystalline silicon solar cell comprising a wedge segment of the electrode and a segment of the electrode, the wedge segment and the electrode segment being joined together, the wedge segment of the electrode being in contact with the front surface of the crystalline silicon solar cell and soldered together
- the electrode segments are in contact with the back side of the crystalline silicon solar cell sheet and are soldered together.
- the solar cell slices of the present application are stacked, and the layout of different components can be used to reduce the spacing of the cells to increase the output power of the components by more than 2%.
- the solar cell slices of the present application are stacked at the same time, and the solder paste layer is applied to the abutment between the slices to realize the connection, so the width of the electrodes can be smaller than that of the current conventional cells, and at the same time, the back of each solar cell slice
- the shortest straight line distance between the electrode and the main grid line and the solar cell slice along the frame parallel to the main grid line direction does not exceed 0.8 mm. If the frame is 0, the shading area can be effectively reduced and the output power of the component can be improved.
- a preparation process of a solar cell module using a solar cell sheet comprising the following steps:
- the solar cell sheet is subjected to a splitting operation to be divided into individual solar cell slices 5;
- the solder paste 6 can be simultaneously printed in the step 2) of the printed solar cell 1 main gate line 2 and the back electrode 3 Alternatively, the solder paste 6 may be applied after the end of step 4).
- the solar cell chips 5 are stacked one on top of the other and the solder paste 6 is applied to the joints, and then the joints can be solidified by soldering or heating and re-cooling.
- the invention provides a solar cell sheet and a component and a preparation process thereof, and the method and the method for realizing the technical solution are many.
- the above description is only a preferred embodiment of the present invention, and it should be noted that it is common to the technical field.
- the skilled person will be able to make several modifications and retouchings without departing from the principles of the invention. These modifications and refinements are also considered to be within the scope of the invention, and various components not specifically identified in this embodiment are available.
- the prior art is implemented.
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Abstract
L'invention concerne une cellule de batterie solaire (1), dans laquelle des lignes de grille principales (2) de celle-ci et une électrode arrière (3) sur le côté arrière de celle-ci sont disposées en quinconce. La conception précédente comme quoi les positions des lignes de grille principales et de l'électrode arrière se chevauchent dans le même plan est remplacée. En même temps, la cellule de batterie solaire constitue un ensemble, avec connexion par empilement et soudage. Tout d'abord, des tranches de batterie solaire (5) obtenues après découpe de la cellule de batterie solaire sont appliquées à une conception de stratification de manière à constituer un nouvel ensemble de batterie solaire. D'autre part, en ce qui concerne le matériau, de la pâte à souder (6) est utilisée pour remplacer une bande de soudure ou une barre omnibus, pour ainsi réduire considérablement les coûts. De plus, la connexion est réalisée par empilement, pour ainsi réduire considérablement les pertes électriques et améliorer l'efficacité globale de production d'énergie de l'ensemble.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020197002982A KR20190029625A (ko) | 2016-07-29 | 2017-03-28 | 일종의 태양전지 셀과 컴포넌트 및 그 제조공법 |
Applications Claiming Priority (2)
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