WO2018010228A1 - 一种具有曝光补正的光罩 - Google Patents

一种具有曝光补正的光罩 Download PDF

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Publication number
WO2018010228A1
WO2018010228A1 PCT/CN2016/093069 CN2016093069W WO2018010228A1 WO 2018010228 A1 WO2018010228 A1 WO 2018010228A1 CN 2016093069 W CN2016093069 W CN 2016093069W WO 2018010228 A1 WO2018010228 A1 WO 2018010228A1
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WO
WIPO (PCT)
Prior art keywords
exposure
region
sub
correction
sawtooth
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PCT/CN2016/093069
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English (en)
French (fr)
Inventor
张春倩
陈彩琴
王超
张启沛
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武汉华星光电技术有限公司
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Application filed by 武汉华星光电技术有限公司 filed Critical 武汉华星光电技术有限公司
Priority to US15/322,174 priority Critical patent/US10042245B2/en
Publication of WO2018010228A1 publication Critical patent/WO2018010228A1/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof

Definitions

  • the present invention relates to the field of liquid crystal display technology, and in particular to a photomask having exposure correction.
  • liquid crystal displays have been widely used in electronic display products such as televisions, computer screens, notebook computers, mobile phones, and the like.
  • the electric field is laterally distributed, so that it is more necessary to ensure the exposure accuracy of the pixel electrode, thereby obtaining a uniform electric field and uniformly deflecting the liquid crystal.
  • the design pattern cannot be completely copied, assuming that if it is an acute angle, after the exposure and etching process, The pattern on the mask will form rounded corners. If such a mask is used, the electric field will be uneven, which will affect the deflection of the liquid crystal and form a dark strip, which will affect the quality of the product and affect the display effect of the display.
  • the present invention provides a reticle with exposure correction.
  • the present invention provides a photomask having exposure correction, comprising a light-shielding region and an exposure region surrounded by the light-shielding region, wherein
  • the exposure area includes a correction sub-area and an exposure sub-area
  • the correction sub-region is disposed along two sides from an acute apex of the exposure sub-region;
  • the correction sub-region is in communication with the exposure sub-region; when the correction sub-region is a sawtooth wave region, a maximum depth of each sawtooth in the sawtooth wave region is less than an exposure minimum precision of the exposure machine; in the sawtooth wave region The maximum depth of each saw tooth is less than the exposure minimum precision of the exposure machine; the sawtooth in the sawtooth wave region is evenly arranged along the apex of the acute angle to both sides
  • the present invention provides a photomask having exposure correction, comprising a light-shielding region and an exposure region surrounded by a light-shielding region, the exposure region including a correction sub-region and an exposure sub-region, the correction sub-region from an acute angle of the exposure sub-region
  • the vertex is set along both sides.
  • the acute angle in the exposed area may become rounded shape after exposure etching, which may cause uneven electric field, affecting liquid crystal deflection in the panel, and thus by correcting the sub-positor
  • the regions are disposed along both sides from the acute apex of the exposure sub-area, and since the size of the acute angle is smaller than the exposure minimum precision of the exposure machine and the size of the correction sub-region is smaller than the exposure minimum precision of the exposure machine, the exposure pattern is not affected.
  • the light diffracted by the sharp angle is superimposed with the light of the other side of the acute angle, thereby increasing the light intensity and enhancing the exposure capability, thereby increasing the exposure precision, and obtaining the desired pattern after exposure etching, thereby making the electric field distribution uniform.
  • Improve the quality of LCD production and then improve the display of the display.
  • the correction sub-region is in communication with the exposure sub-region. This is the specific location of the correction sub-area.
  • the correction sub-region includes, but is not limited to, a sawtooth-like region or a sinusoid-like region.
  • the correction sub-region when the correction sub-region is a circular region, when the correction sub-region is a sawtooth wave region, the maximum depth of each sawtooth in the sawtooth wave region is less than exposure The minimum exposure of the machine.
  • the sawtooth in the sawtooth wave region is evenly arranged along the apex of the acute angle to both sides.
  • the sawtooth in the sawtooth wave region gradually decreases along the apex of the acute angle to both sides.
  • the sawtooth size is larger, and the enhancement effect on light is more obvious.
  • the sawtooth size is smaller and the light enhancement effect is smaller, so that the acute angle can be more uniformly improved.
  • the exposure intensity thus obtaining the desired pattern, thereby improving the display effect of the display.
  • the correction sub-region is a sine wave region
  • the peak of each sine wave in the sine wave region is smaller than the exposure minimum precision of the exposure machine.
  • This is another specific shape of the correction sub-area. By limiting the shape and size of the correction sub-area, the correction effect can be further optimized, thereby improving the display effect of the display.
  • the sine wave in the sine wave region is evenly arranged along the apex of the acute angle to both sides
  • the sine wave in the sinusoidal wave region gradually decreases along the apex of the acute angle to both sides. Further, by setting the sine wave closer to the vertex of the acute angle, the amplitude of the sine wave is larger, and the enhancement effect on the light is more obvious, and at a position farther away from the vertex of the specific acute angle, the amplitude of the sine wave is smaller, and the enhancement effect on the light is better. Small, so that the desired pattern is obtained, thereby improving the display effect of the display.
  • the present invention also provides a photomask having exposure correction, comprising a light-shielding region and an exposure region surrounded by the light-shielding region, wherein the exposure region includes a correction sub-region and an exposure sub-region, the correction sub-region from the exposure sub-region
  • the sharp corners of the area are set along both sides.
  • the light shielding region includes a body and an extension extending outward from the body.
  • the reticle of the exposure sub-region provided by the invention provides at least one correction sub-region around the acute-angle apex of the exposure sub-region, and the correction sub-region replaces the straight line on both sides of the original acute angle to form a class.
  • Sawtooth area or sine wave area Since the size of the acute angle is smaller than the minimum precision of the exposure of the exposure machine and the size of the correction sub-area is smaller than the minimum precision of the exposure of the exposure machine, the exposure pattern that does not affect, the light diffracted by the acute angle is superimposed with the light of the other side of the acute angle. Thereby increasing the light intensity, enhancing the exposure capability, thereby increasing the exposure precision, obtaining the desired pattern after exposure etching, thereby making the electric field distribution uniform, improving the production quality of the liquid crystal product, and thereby improving the display effect of the display.
  • FIG. 1 is a schematic view showing a structure in which a complementary sub-region of a reticle is a sawtooth wave region and a sawtooth is evenly arranged in a sawtooth wave region;
  • FIG. 2 is a schematic view showing a structure in which a complement sub-region of a reticle is a sawtooth wave region, and a sawtooth region in the sawtooth wave region gradually decreases from an apex of an acute angle to both sides;
  • FIG. 3 is a schematic structural view showing a sinusoidal wave region in a sinusoidal wave region in which a sinusoidal wave region is uniformly arranged in the sinusoidal wave region;
  • FIG. 4 is a schematic view showing a sinusoidal wave region in the sinusoidal wave region in the sinusoidal wave region of the present invention, and a sinusoidal wave in the sinusoidal wave region gradually decreases along the apex of the acute angle to both sides.
  • FIG. 1 illustrates a photomask 1 having an exposure correction function according to a preferred embodiment of the present invention.
  • the reticle 1 includes a light shielding region 11 and an exposure region 12.
  • the exposed area 12 is surrounded by the light blocking area 11.
  • the shaded portion is the light-shielding region 11, and the blank portion is the exposed region 12.
  • the light shielding region 11 includes a body 111 and an extending portion 112 extending outward from the body 111.
  • the body 111 is rectangular.
  • the body 111 includes a bottom edge 1111. It can be understood that the shape of the body 111 in other embodiments can be adaptively adjusted according to actual needs, such as a square, a polygon, and the like.
  • the extending portion 112 extends obliquely outward from the bottom edge 1111 of the body 111.
  • the extension portion 112 has a substantially U-line structure.
  • the front end of the extending portion 112 is connected to the bottom edge 1111 of the body 111 to form the exposed area 20. It can be understood that in other embodiments, the shape and the number of the extending portion 112 are adaptively adjusted according to actual needs, and only the exposed region 12 can be formed by being coupled to the body 111.
  • the exposure area 12 includes an exposure sub-area 122 and a correction sub-area 121.
  • the exposure sub-region 122 is substantially diamond-shaped. That is, the exposed portion 12 formed by the extending portion 112 and the body 111 is substantially rhombic.
  • the exposed region 12 is located at a critical position where the extension portion 112 is connected to the body 111 to form at least one acute-angle apex region.
  • the correction sub-region 121 is disposed along both sides from the acute vertex of the exposure sub-region.
  • the correction sub-region 121 is in communication with the exposure sub-region 122.
  • the correction sub-region includes, but is not limited to, a sawtooth-like region or a sinusoid-like region.
  • the correction sub-region 121 is a sawtooth wave region, and the maximum depth of each sawtooth 1211 in the sawtooth wave region 121 is smaller than the exposure minimum precision of the exposure machine.
  • the maximum depth of each sawtooth 1211 in the sawtooth wave region 121 is smaller than the exposure minimum precision of the exposure machine.
  • the sawtooth 1231 in the sawtooth wave region 123 in FIG. 2 is gradually reduced along the apex of the acute angle to both sides, because the sawtooth is larger in size closer to the acute apex, The enhancement effect of light is more obvious, and in the far position, the sawtooth size is smaller, and the light enhancement effect is smaller, so that the exposure intensity of the acute angle can be more uniformly improved, and the acute angle pattern can be better restored.
  • FIG. 3 is a photomask 2 with an exposure correction function according to another embodiment of the present invention.
  • the reticle 2 includes a light shielding region 21 and an exposure region 22.
  • the exposed area 22 is surrounded by the light blocking area 21.
  • the shaded portion is the light-shielding region 21, and the blank portion is the exposure region 22.
  • the exposure area 22 includes an exposure sub-area 222 and a correction sub-area 221 .
  • the structure of the reticle 2 is substantially the same as that of the reticle 1 described above. The difference is that in the present embodiment, the correction sub-region 221 is a sine wave region.
  • the maximum peak of each of the sine waves 2211 in the sine wave region 221 is smaller than the exposure minimum precision of the exposure machine.
  • the sine wave 2231 of the sine wave region 223 in FIG. 4 gradually decreases along the apex of the acute angle to both sides, because the sine wave closer to the acute angle apex has a larger amplitude and enhances the light.
  • the sine wave at a far position has a small amplitude and a small enhancement effect on light, so that the exposure intensity of the acute angle can be more uniformly improved, thereby obtaining the desired pattern.
  • the size of the sawtooth in the sawtooth region and the size of the sine wave in the sinusoidal region are set by the exposure machine according to the wavelength of the light, the position of the light source, etc., and can be understood and calculated by those skilled in the art.
  • the reticle with exposure correction function forms at least one complementary sub-region from the acute apex of the exposure sub-region along the acute angle, and the correction sub-region replaces the straight line on both sides of the original acute angle.
  • a sawtooth-like region or a sine wave region is formed. Since the size of the acute angle is smaller than the minimum precision of the exposure of the exposure machine and the size of the correction sub-area is smaller than the exposure precision of the exposure machine, the exposure pattern that does not affect, the light diffracted through the vertex of the acute angle is superimposed with the light on the other side of the sharp corner. Enhancement, thereby increasing the light intensity, enhancing the exposure ability, thereby increasing the exposure precision, obtaining the desired pattern after exposure etching, thereby making the electric field distribution uniform, improving the quality of the liquid crystal product, and thereby improving the display effect of the display.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Optical Elements Other Than Lenses (AREA)

Abstract

一种具有曝光补正的光罩（1,2），包括遮光区域（11,21）和被遮光区域（11,21）包围的曝光区域（12,22），所述曝光区域（12,22）包括补正子区域（121,221）以及曝光子区域（122,222），所述补正子区域（121,221）从所述曝光子区域（122,222）的锐角顶点处沿两边设置。

Description

一种具有曝光补正的光罩 技术领域
本发明涉及液晶显示技术领域，特别涉及一种具有曝光补正的光罩。
 背景技术
当前，液晶显示器已经广泛的应用在电子显示产品上，如电视、计算机屏幕、笔记本电脑、移动电话等。
在液晶显示器中，为保证液晶的偏转角度，需要保证在面板中形成的电场强度。然而，在广视角（FFS）显示模式中，电场为横向分布，从而更需要保证像素电极的曝光精度，从而得到均匀的电场，使液晶均匀偏转。
在制作的光罩的过程中，当光罩上的尺寸小于曝光机的最小精度，由于曝光精度的限制，不能完全复制设计的图形，假设如果是锐角，经过曝光、蚀刻制作过程后，得到的光罩上的图形会形成圆角，如果使用这样的光罩，会使电场不均匀，影响液晶的偏转，形成暗带，从而影响产品的制作质量，进而影响到显示器的显示效果。
故，有必要提供一种光罩，以解决现有技术所存在的问题。
 技术问题
为了避免由于曝光精度的限制，不能完全复制光罩设计的图形，本发明提供一种具有曝光补正的光罩。
 技术解决方案
本发明提供一种具有曝光补正的光罩，包括遮光区域和被遮光区域包围的曝光区域，其中，
所述曝光区域包括补正子区域以及曝光子区域，
所述补正子区域从所述曝光子区域的锐角顶点处沿两边设置; 所述补正子区域与曝光子区域相连通；当所述补正子区域为锯齿波区域时，所述锯齿波区域中每个锯齿的最大深度小于曝光机的曝光最小精度；所述锯齿波区域中每个锯齿的最大深度小于曝光机的曝光最小精度；所述锯齿波区域中锯齿沿锐角的顶点至两边均匀排列
本发明提供一种具有曝光补正的光罩，包括遮光区域和被遮光区域包围的曝光区域，所述曝光区域包括补正子区域以及曝光子区域，所述补正子区域从所述曝光子区域的锐角顶点处沿两边设置。在现有的光罩中，由于曝光精度的限制，该曝光区域中的锐角在曝光蚀刻后会变形成圆角形状，这样会导致电场不均匀，影响面板中的液晶偏转，因此通过将补正子区域从所述曝光子区域的锐角顶点处沿两边设置，且因为锐角的尺寸小于曝光机的曝光最小精度以及补正子区域的尺寸小于曝光机的曝光最小精度，这样不会影响的曝光图案。即经过锐角一边衍射的光会与锐角另一边的光发生叠加增强，从而增加光强度，增强曝光能力，进而达到增大曝光精度，经曝光蚀刻后得到想要的图案，进而使得电场分布均匀，提升液晶产品制作质量，进而提升到显示器的显示效果。
在本发明中的具有曝光补正的光罩，所述补正子区域与所述曝光子区域连通。此为补正子区域的具体位置。
在本发明中的具有曝光补正的光罩，所述补正子区域包括但不限于类锯齿波区域或类正弦波区域。
在本发明中的具有曝光补正的光罩，当所述补正子区域为圆形区域时，当所述补正子区域为锯齿波区域时，所述锯齿波区域中每个锯齿的最大深度小于曝光机的曝光最小精度。通过对补正子区域的形状及大小的限制，可以更加优化补正效果，进而提高显示器的显示效果。
在本发明中的具有曝光补正的光罩，所述锯齿波区域中锯齿沿锐角的顶点至两边均匀排列。
在本发明中的具有曝光补正的光罩，所述锯齿波区域中锯齿沿锐角的顶点至两边逐渐减小。通过设置距离锐角顶点更近的地方，锯齿尺寸更大，对光的增强效果更明显，而在较远的位置，锯齿尺寸较小，对光的增强效果较小，这样可以更加均匀的改善锐角的曝光强度，从而得到的想要得到的图案，进而提高显示器的显示效果。
在本发明中的具有曝光补正的光罩，当所述补正子区域为正弦波区域时，所述正弦波区域中每个正弦波的波峰小于曝光机的曝光最小精度。此为补正子区域的另一种具体的形状，通过对补正子区域的形状及大小的限制，可以更加优化补正效果，进而提高显示器的显示效果。
在本发明中的具有曝光补正的光罩，所述正弦波区域中的正弦波沿锐角的顶点至两边均匀排列
在本发明中的具有曝光补正的光罩，所述正弦波区域中的正弦波沿锐角的顶点至两边逐渐减小。进一步通过设定正弦波距离锐角顶点更近的地方，正弦波振幅更大，对光的增强效果更明显，而在具体锐角顶点较远的位置，正弦波振幅较小，对光的增强效果较小，从而得到想要的图案，进而提高显示器的显示效果。
本发明还提供一种具有曝光补正的光罩，包括遮光区域和被遮光区域包围的曝光区域，其中，所述曝光区域包括补正子区域以及曝光子区域，所述补正子区域从所述曝光子区域的锐角顶点处沿两边设置。所述遮光区域包括本体及自所述本体向外延伸而成的延伸部。
 有益效果
与现有技术相比，本发明提供的具有曝光补正功能的光罩中曝光子区域的锐角顶点周围形成至少一补正子区域，该补正子区域取代了原有的锐角的两边的直线而形成类锯齿区域或者正弦波区域。由于锐角的尺寸小于曝光机的曝光最小精度以及补正子区域的尺寸小于曝光机的曝光最小精度，这样不会影响的曝光图案，经过锐角一边衍射的光会与锐角另一边的光发生叠加增强，从而增加光强度，增强曝光能力，进而达到增大曝光精度，经曝光蚀刻后得到想要的图案，进而使得电场分布均匀，提升液晶产品制作质量，进而提升显示器的显示效果。
 附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面对实施例中所需要使用的附图作简单的介绍。下面描述中的附图仅为本发明的部分实施例，对于本领域普通技术人员而言，在不付出创造性劳动的前提下，还可以根据这些附图获取其他的附图。
图1为本发明中的光罩的补正子区域为锯齿波区域，且锯齿波区域中锯齿均匀排列的结构示意图；
图2为本发明中的光罩的补正子区域为锯齿波区域，且锯齿波区域中锯齿沿锐角的顶点至两边逐渐减小的结构示意图；
图3本发明中的光罩的补正子区域为正弦波区域，且正弦波区域中正弦波均匀排列的结构示意图；
图4本发明中的光罩的补正子区域为正弦波区域，且正弦波区域中正弦波沿锐角的顶点至两边逐渐减小的结构示意图。
 本发明的最佳实施方式
请参照附图中的图式，其中相同的组件符号代表相同的组件。以下的说明是基于所例示的本发明具体实施例，其不应被视为限制本发明未在此详述的其它具体实施例。
请参阅图1，为本发明的一较佳实施例提供的具有曝光补正功能的光罩1。该光罩1包括遮光区域11和曝光区域12。其中该曝光区域12被该遮光区域11包围。阴影部分为遮光区域11，空白部分为曝光区域12。
具体的，该遮光区域11包括本体111及自该本体111向外延伸而成的延伸部112。本实施例中，该本体111为矩形。该本体111包括一底边1111。可以理解的，其他实施例中该本体111的形状可以根据实际需求进行适应性调整，如方形、多边形等。
本实施例中，所述延伸部112自该本体111的底边1111斜向外延伸而成。该延伸部112大致呈U行结构。本实施例中，该延伸部112的首尾与该本体111的底边1111连接形成所述曝光区域20。可以理解的，其他实施例中，所述延伸部112的形状及数量根据实际需要进行适应性调整，只有能够与本体111连接配合形成所述曝光区域12即可。
该曝光区域12包括曝光子区域122和补正子区域121。具体的，本实施例中，该曝光子区域122大致呈菱形。也即所述延伸部112与该本体111配合形成的曝光区域12大致呈菱形。该曝光区域12位于该延伸部112与本体111连接的临界位置形成至少一锐角顶点区域。该补正子区域121从所述曝光子区域的锐角顶点处沿两边设置。该补正子区域121与该曝光子区域122连通。
优选的，所述补正子区域包括但不限于类锯齿波区域或类正弦波区域。
本实施例中，所述补正子区域121为锯齿波区域，该锯齿波区域121中每个锯齿1211的最大深度小于曝光机的曝光最小精度，当光透过锯齿波区域后会发生衍射，经过锐角一边衍射的光会与锐角另一条边的光发生叠加增强，从而增加光强度，增强曝光能力，进而达到增大曝光精度的目的。在刻蚀后，会形成两条边仍然是直线的锐角图形。通过多次实验可以得出，这种补正子区域可以使补正效果更佳，即更好的还原锐角图案。具体的，该锯齿区域121中的锯齿1211沿锐角的顶点至两边均匀排列，且每个锯齿紧密连接。
结合图1并参阅图2所示，优选的，图2中的锯齿波区域123中的锯齿1231沿锐角的顶点至两边逐渐减小，因为距离锐角顶点更近的地方，锯齿尺寸更大，对光的增强效果更明显，而在较远的位置，锯齿尺寸较小，对光的增强效果较小，这样可以更加均匀的改善锐角的曝光强度，更好的还原锐角图案。
请参阅图3，为本发明另一较佳实施例提供的具有曝光补正功能的光罩2。该光罩2包括遮光区域21和曝光区域22。其中该曝光区域22被该遮光区域21包围。阴影部分为遮光区域21，空白部分为曝光区域22。该曝光区域22包括曝光子区域222和补正子区域221。该光罩2的结构与前述光罩1的结构基本相同。不同之处在于，在本实施例中该补正子区域221为正弦波区域。所述正弦波区域221的中每个正弦波2211的最大波峰小于曝光机的曝光最小精度。当光透过正弦波后会发生衍射，经过锐角一边衍射的光会与锐角另一条边的光发生叠加增强，从而增加光强度，增强曝光能力，进而达到增大曝光精度的目的。在刻蚀后，会形成两条边仍然是直线的锐角图形。通过多次实验可以得出，这种补正子区域可以使补正效果更佳，即更好的还原锐角图案。具体的，该正弦波区域221中的正弦波沿锐角的顶点至两边均匀排列，且每个正弦波紧密连接。
结合图3并参阅图4，图4中正弦波区域223的正弦波2231沿着锐角的顶点至两边逐渐减小，因为距离锐角顶点更近的正弦波，振幅更大，对光的增强效果更明显，而在较远的位置的正弦波，振幅较小，对光的增强效果较小，这样可以更加均匀的改善锐角的曝光强度，从而得到的想要得到的图案。
可以理解的是，所述补正子区域的相关形状设计不局限于上述所描述的形状，可以使其他的结构，这里不一一举例描述。
上述锯齿区域中锯齿的尺寸与正弦波区域中正弦波的大小是通过曝光机根据光的波长，光源位置等条件设置的，对于本领域技术人员而言，是可以理解并计算出来的。
与现有技术相比，本发明提供的具有曝光补正功能的光罩中从曝光子区域的锐角顶点沿锐角两边形成至少一补正子区域，该补正子区域取代了原有的锐角的两边的直线而形成类锯齿区域或者正弦波区域。由于锐角的尺寸小于曝光机的曝光最小精度以及补正子区域的尺寸小于曝光机的曝光最小精度，这样不会影响的曝光图案，经过锐角顶点一边衍射的光会与锐角顶点另一边的光发生叠加增强，从而增加光强度，增强曝光能力，进而达到增大曝光精度，经曝光蚀刻后得到想要的图案，进而使得电场分布均匀，提升液晶产品制作质量，进而提升显示器的显示效果。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (19)

  1. 一种具有曝光补正的光罩，包括遮光区域和被遮光区域包围的曝光区域，其中，
    所述曝光区域包括补正子区域以及曝光子区域，
    所述补正子区域从所述曝光子区域的锐角顶点处沿两边设置; 所述补正子区域与曝光子区域相连通；当所述补正子区域为锯齿波区域时，所述锯齿波区域中每个锯齿的最大深度小于曝光机的曝光最小精度；所述锯齿波区域中每个锯齿的最大深度小于曝光机的曝光最小精度；所述锯齿波区域中锯齿沿锐角的顶点至两边均匀排列。
  2. 一种具有曝光补正的光罩，包括遮光区域和被遮光区域包围的曝光区域，其中，
    所述曝光区域包括补正子区域以及曝光子区域，
    所述补正子区域从所述曝光子区域的锐角顶点处沿两边设置; 所述遮光区域包括本体及自所述本体向外延伸而成的延伸部。
  3. 根据权利要求2所述的具有曝光补正的光罩，其中，所述补正子区域与曝光子区域相连通。
  4. 根据权利要求3所述的具有曝光补正的光罩，其中，所述补正子区域包括但不限于类锯齿波区域或类正弦波区域。
  5. 根据权利要求4所述的具有曝光补正的光罩，其中，当所述补正子区域为锯齿波区域时，所述锯齿波区域中每个锯齿的最大深度小于曝光机的曝光最小精度。
  6. 根据权利要求5所述的具有曝光补正的光罩，其中，所述锯齿波区域中锯齿沿锐角的顶点至两边均匀排列。
  7. 根据权利要求5所述的具有曝光补正的光罩，其中，所述锯齿波区域中锯齿沿锐角的顶点至两边逐渐减小。
  8. 根据权利要求4所述的具有曝光补正的光罩，其中，当所述补正子区域为正弦波区域时，所述正弦波区域中每个正弦波的波峰小于曝光机的曝光最小精度。
  9. 根据权利要求8所述的具有曝光补正的光罩，其中，所述正弦波区域中的正弦波沿锐角的顶点至两边均匀排列。
  10. 根据权利要求8所述的具有曝光补正的光罩，其中，所述正弦波区域中的正弦波沿锐角的顶点至两边逐渐减小。
  11. 一种具有曝光补正的光罩，包括遮光区域和被遮光区域包围的曝光区域，其中，
    所述曝光区域包括补正子区域以及曝光子区域，
    所述补正子区域从所述曝光子区域的锐角顶点处沿两边设置。
  12. 根据权利要求11所述的具有曝光补正的光罩，其中，所述补正子区域与曝光子区域相连通。
  13. 根据权利要求12所述的具有曝光补正的光罩，其中，所述补正子区域包括但不限于类锯齿波区域或类正弦波区域。
  14. 根据权利要求13所述的具有曝光补正的光罩，其中，当所述补正子区域为锯齿波区域时，所述锯齿波区域中每个锯齿的最大深度小于曝光机的曝光最小精度。
  15. 根据权利要求14所述的具有曝光补正的光罩，其中，所述锯齿波区域中锯齿沿锐角的顶点至两边均匀排列。
  16. 根据权利要求14所述的具有曝光补正的光罩，其中，所述锯齿波区域中锯齿沿锐角的顶点至两边逐渐减小。
  17. 根据权利要求13所述的具有曝光补正的光罩，其中，当所述补正子区域为正弦波区域时，所述正弦波区域中每个正弦波的波峰小于曝光机的曝光最小精度。
  18. 根据权利要求17所述的具有曝光补正的光罩，其中，所述正弦波区域中的正弦波沿锐角的顶点至两边均匀排列。
  19. 根据权利要求17所述的具有曝光补正的光罩，其中，所述正弦波区域中的正弦波沿锐角的顶点至两边逐渐减小。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113314462A (zh) * 2021-05-26 2021-08-27 惠科股份有限公司 驱动电路的制造方法、驱动电路和光罩

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106200257A (zh) * 2016-07-13 2016-12-07 武汉华星光电技术有限公司 一种具有曝光补正的光罩
CN108761997A (zh) * 2018-06-05 2018-11-06 深圳市华星光电技术有限公司 光罩和薄膜晶体管的制备方法
CN109407430B (zh) * 2018-12-17 2024-04-26 武汉华星光电技术有限公司 一种阵列基板及其制备方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5707765A (en) * 1996-05-28 1998-01-13 Microunity Systems Engineering, Inc. Photolithography mask using serifs and method thereof
US6044007A (en) * 1999-03-24 2000-03-28 Advanced Micro Devices, Inc. Modification of mask layout data to improve writeability of OPC
US20030162103A1 (en) * 2002-02-28 2003-08-28 Katsuo Oshima Mask pattern correction method
JP2004093705A (ja) * 2002-08-29 2004-03-25 Fujitsu Ltd マスクパターンの補正方法
US20060105249A1 (en) * 2004-11-17 2006-05-18 Fujitsu Limited Exposure mask and method of manufacturing the same
CN1858884A (zh) * 2006-06-06 2006-11-08 烟台正海电子网板股份有限公司 彩色显像管荫罩印相用原版
CN101297390A (zh) * 2005-09-13 2008-10-29 朗明科技公司 用于光刻法的系统、掩模和方法
CN106200257A (zh) * 2016-07-13 2016-12-07 武汉华星光电技术有限公司 一种具有曝光补正的光罩

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5707765A (en) * 1996-05-28 1998-01-13 Microunity Systems Engineering, Inc. Photolithography mask using serifs and method thereof
US6044007A (en) * 1999-03-24 2000-03-28 Advanced Micro Devices, Inc. Modification of mask layout data to improve writeability of OPC
US20030162103A1 (en) * 2002-02-28 2003-08-28 Katsuo Oshima Mask pattern correction method
JP2004093705A (ja) * 2002-08-29 2004-03-25 Fujitsu Ltd マスクパターンの補正方法
US20060105249A1 (en) * 2004-11-17 2006-05-18 Fujitsu Limited Exposure mask and method of manufacturing the same
CN101297390A (zh) * 2005-09-13 2008-10-29 朗明科技公司 用于光刻法的系统、掩模和方法
CN1858884A (zh) * 2006-06-06 2006-11-08 烟台正海电子网板股份有限公司 彩色显像管荫罩印相用原版
CN106200257A (zh) * 2016-07-13 2016-12-07 武汉华星光电技术有限公司 一种具有曝光补正的光罩

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113314462A (zh) * 2021-05-26 2021-08-27 惠科股份有限公司 驱动电路的制造方法、驱动电路和光罩

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