WO2017221581A1 - Lead frame - Google Patents

Lead frame Download PDF

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Publication number
WO2017221581A1
WO2017221581A1 PCT/JP2017/017960 JP2017017960W WO2017221581A1 WO 2017221581 A1 WO2017221581 A1 WO 2017221581A1 JP 2017017960 W JP2017017960 W JP 2017017960W WO 2017221581 A1 WO2017221581 A1 WO 2017221581A1
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WO
WIPO (PCT)
Prior art keywords
lead frame
connecting bar
lead
short direction
bars
Prior art date
Application number
PCT/JP2017/017960
Other languages
French (fr)
Japanese (ja)
Inventor
石橋　貴弘
Original Assignee
株式会社三井ハイテック
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社三井ハイテック filed Critical 株式会社三井ハイテック
Priority to CN201780039299.3A priority Critical patent/CN109417063A/en
Publication of WO2017221581A1 publication Critical patent/WO2017221581A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the disclosed embodiment relates to a lead frame.
  • the above-described thin semiconductor device for example, collectively seals a lead frame on which a plurality of semiconductor elements and bonding wires are mounted, and integrally forms a plurality of semiconductor devices.
  • the technique which carries out the half etching process of the connecting bar previously is known (for example, refer patent document 1).
  • the connecting bar is half-etched like a conventional lead frame
  • the strength of the lead frame decreases with the increase in size of the lead frame, and the lead frame may be bent. Such bending may cause a semiconductor element or a bonding wire mounted on the lead frame to be broken or missing.
  • One aspect of the embodiment has been made in view of the above, and an object thereof is to provide a lead frame in which bending in a short direction is suppressed.
  • a lead frame is rectangular and includes a plurality of unit lead frames, a plurality of first connecting bars, and a plurality of second connecting bars.
  • the unit lead frame has a die pad and a plurality of leads.
  • the first connecting bar connects adjacent unit lead frames and extends in the longitudinal direction of the lead frame.
  • the second connecting bar connects adjacent unit lead frames and extends in a short direction of the lead frame.
  • at least one part of a plurality of said 2nd connecting bars has a part higher in rigidity than said 1st connecting bar.
  • a lead frame that suppresses bending can be provided.
  • FIG. 1 is a conceptual diagram of a lead frame according to the first embodiment.
  • FIG. 2 is an enlarged plan view of the lead frame according to the first embodiment.
  • 3A is a cross-sectional view taken along line AA shown in FIG. 3B is a cross-sectional view taken along line BB shown in FIG. 3C is a cross-sectional view taken along the line CC shown in FIG.
  • FIG. 4A is a schematic cross-sectional view showing one manufacturing process of the semiconductor device using the lead frame according to the first embodiment.
  • FIG. 4B is a schematic cross-sectional view showing the next manufacturing process of the semiconductor device using the lead frame according to the first embodiment.
  • FIG. 4C is a schematic cross-sectional view showing a further subsequent manufacturing process of the semiconductor device using the lead frame according to the first embodiment.
  • 5A is a cross-sectional view taken along line DD shown in FIG.
  • FIG. 5B is a cross-sectional view taken along the line DD in FIG. 2 according to a modification of the first embodiment.
  • FIG. 5C is a cross-sectional view taken along the line DD in FIG. 2 according to another modification of the first embodiment.
  • FIG. 6 is an enlarged plan view of a lead frame according to the second embodiment.
  • FIG. 7 is an enlarged plan view of a lead frame according to a modification of the second embodiment.
  • FIG. 8 is a schematic plan view of a lead frame according to the third embodiment.
  • FIG. 9 is a schematic plan view of a lead frame according to the fourth embodiment.
  • FIG. 10 is a schematic plan view of a lead frame according to a modification of the fourth embodiment.
  • FIG. 11 is a schematic plan view of a lead frame according to another modification of the fourth embodiment.
  • FIG. 12 is a schematic plan view of a lead frame according to still another modification of the fourth embodiment.
  • FIG. 13 is a schematic plan view of a lead frame obtained by combining the third embodiment and the fourth embodiment.
  • FIG. 14 is a schematic plan view of a lead frame according to the fifth embodiment.
  • FIG. 15 is a schematic plan view of a lead frame according to the sixth embodiment.
  • the lead frame 1 according to the first embodiment is rectangular in plan view, and includes a plurality of unit lead frames 10, a plurality of first connecting bars 11, and a plurality of second connecting bars. 12 and an outer frame 13.
  • the unit lead frames 10 are arranged in a matrix on the lead frame 1.
  • the first connecting bar 11 connects the unit lead frames 10 adjacent in the lateral direction and extends along the longitudinal direction L of the lead frame 1.
  • the second connecting bar 12 connects the unit lead frames 10 adjacent in the longitudinal direction and extends along the short direction S of the lead frame 1.
  • the outer frame 13 is provided so as to surround four sides of the unit lead frames 10 arranged in a matrix.
  • the outer frame 13 has a pair of first frame portions 13a extending in the short direction S and a pair of second frame portions 13b extending in the longitudinal direction L, and the pair of first frame portions 13a.
  • the first connecting bar 11 extends between them, and the second connecting bar 12 extends between the pair of second frame portions 13b.
  • the first connecting bar 11 extending in the longitudinal direction L is half-etched.
  • the lead frame is thin and long in the longitudinal direction. For this reason, the lead frame is easily bent in the longitudinal direction.
  • various ends are supported by supporting both end portions in the short direction of the lead frame, that is, the pair of second frame portions, so that the lead frame does not bend along the longitudinal direction which is more flexible than the short direction.
  • the manufacturing process is performed. For this reason, during the processing of the lead frame, the present inventor has realized that it is not a problem that it is difficult to bend in the longitudinal direction or that it is easily bent in the longitudinal direction. Rather, the inventor has noticed that the lead frame is easily bent in the short direction during processing. In particular, when the interval between the second frame portions 13b is increased with the enlargement of the lead frame or the like, the lead frame is easily bent in the short direction.
  • the rigidity of the second connecting bar 12 extending in the short direction S is made higher than the rigidity of the first connecting bar 11.
  • the second connecting bar 12 is not half-etched, and the second connecting bar 12 is thicker than at least a part of the first connecting bar 11.
  • a portion that has not been half-etched is referred to as a “full metal portion” and is indicated by rhombus hatching. Further, the half-etched portion is referred to as a “half-etched portion” and is indicated by hatching with hatching.
  • the lead frame 1 is a lead frame used for manufacturing a QFN type semiconductor device.
  • the lead frame 1 is made of copper, a copper alloy, an iron nickel alloy, or the like.
  • the lead frame 1 is formed by etching or the like on a rectangular metal plate in plan view.
  • the unit lead frame 10 is a portion surrounded by the first connecting bar 11 and the second connecting bar 12, and has a die pad 10a, a plurality of leads 10b, and a support bar 10c.
  • the rectangular die pad 10a in plan view is provided in the central portion of the unit lead frame 10, and the semiconductor element 20 can be mounted on the front surface side (see FIG. 4A).
  • the plurality of leads 10b are provided through spaces so as to face the four sides of the die pad 10a, and are supported by the first connecting bar 11 or the second connecting bar 12.
  • the lead 10b functions as an external terminal of the semiconductor device 2 by being electrically connected to the electrode of the semiconductor element 20 by the bonding wire 21 or the like (see FIGS. 4A and 4C).
  • the support bar 10c extends outward from each corner of the die pad 10a and is connected to the first connecting bar 11 and the second connecting bar 12 to support the die pad 10a.
  • the unit lead frame 10 corresponds to each semiconductor device 2 (see FIG. 4C).
  • a first connecting bar 11 and a second connecting bar 12 are arranged in a lattice pattern.
  • the first connecting bar 11 extends along the longitudinal direction L of the lead frame 1 and connects adjacent unit lead frames 10 along the short direction S. Moreover, the 1st connecting bar 11 is connected to the 1st frame part 13a (refer FIG. 1) of the outer frame 13 at both ends.
  • the second connecting bar 12 extends along the short direction S of the lead frame 1 and connects adjacent unit lead frames 10 along the longitudinal direction L. Moreover, the 2nd connecting bar 12 is connected to the 2nd frame part 13b (refer FIG. 1) of the outer frame 13 at both ends.
  • the first connecting bar 11 is formed so that the width W1 is uniform
  • the second connecting bar 12 is formed so that the width W2 is uniform.
  • the width W1 and the width W2 are equal.
  • the first connecting bar 11 and the second connecting bar 12 are orthogonal to each other at the intersection 14.
  • the widths W1 and W2 are not necessarily equal, and the first connecting bar 11 and the second connecting bar 12 do not have to be orthogonal.
  • FIGS. 3A to 3C the boundary lines of the constituent members are indicated by broken lines for easy understanding.
  • the die pad 10a and the lead 10b are not half-etched except for a part, and have the same thickness as the metal plate before the etching process.
  • An etched portion 15a that is half-etched on the back side is formed at the end of the die pad 10a, and an etched portion 15b that is half-etched on the back side is formed at the end of the lead 10b.
  • the first connecting bar 11 extending along the longitudinal direction L is half-etched on the back surface to form an etched portion 15c. That is, the first connecting bar 11 is thinner than the metal plate before the etching process and has a low rigidity.
  • the second connecting bar 12 extending along the short direction S is not half-etched, and has the same thickness as the metal plate before the etching. That is, the 2nd connecting bar 12 is thicker than the 1st connecting bar 11, and rigidity is high. Thereby, since the cross-sectional area of the 2nd connecting bar 12 is larger than the 1st connecting bar 11, the intensity
  • the half-etching process is not performed at the intersection 14 where the first connecting bar 11 (see FIG. 2) and the second connecting bar 12 cross each other, and the metal plate before the etching process It is the same thickness as the plate thickness. That is, the second connecting bar 12 extending along the short-side direction S includes a full metal portion from one end to the other end including the intersecting portion 14. Thereby, it is possible to suppress the lead frame 1 from being bent in the short direction S.
  • the second connecting bar 12 is composed of a full metal portion, similar to the main portion of the die pad 10a. Therefore, when the lead frame 1 is formed from a metal plate having a predetermined plate thickness, the thickness of the second connecting bar 12 can be maximized. Therefore, the strength of the lead frame 1 in the short direction S can be maximized.
  • FIGS. 4A to 4C are schematic cross-sectional views showing a cross section along the short direction S in the lead frame 1, and the boundary lines of the constituent members are indicated by broken lines.
  • the semiconductor element 20 is mounted on the die pad 10a of the lead frame 1, and a bonding wire 21 is used between each electrode of the semiconductor element 20 and the lead 10b corresponding to each electrode. Connect electrically.
  • the front surface side of the lead frame 1 is collectively sealed with a sealing resin 22.
  • the unit lead frames 10 are diced with a rotary blade along a dicing line DL along the first connecting bar 11 and the second connecting bar 12 (see FIG. 2).
  • the semiconductor device 2 is divided into individual semiconductor devices 2.
  • the first connecting bar 11 is provided with a recess by the etching portion 15 c, so that the metal at the time of dicing along the longitudinal direction L (see FIG. 2)
  • the cross-sectional area of the part can be reduced.
  • burrs are generated on the cut surface by the first connecting bar 11 during dicing. Can be suppressed. Therefore, an increase in time required for dicing can be suppressed as compared with the case where both connecting bars are all formed of a full metal portion.
  • the life of the rotary blade can be extended.
  • the second connecting bar 12 is composed of a full metal part (see FIG. 2). Therefore, it is possible to suppress the bending of the lead frame 1 in the short direction as compared with the case where both the connecting bars are all formed of the half-etched portion.
  • the sealing resin 22 is embedded in the etching portions 15a and 15b provided in the die pad 10a and the lead 10b, respectively. With this structure, in the semiconductor device 2, it is possible to prevent the die pad 10 a and the lead 10 b from being detached from the back surface side of the sealing resin 22.
  • FIGS. 5A to 5C a portion corresponding to the cross-sectional outline shown in FIG. 5A is indicated by a broken line for easy understanding.
  • the second connecting bar 12 has a rectangular shape in sectional view, in other words, is composed of a full metal part.
  • the configuration of the second connecting bar 12 is not limited to the configuration shown in FIG. 5A.
  • an etching portion 15d that is half-etched may be formed on the back side of the side portion.
  • an etching portion 15e that is etched so that the side surface has a shape spreading toward the top may be formed.
  • the etching parts 15d and 15e can be formed in the same etching process as the etching parts 15a to 15c (see FIG. 3A).
  • the cross section is an inverted trapezoidal shape, and the central portion is formed of a full metal portion, and the strength in the short direction S (see FIG. 2) can be secured by the full metal portion. Furthermore, since the side portions are etched in any of the modifications, the cross-sectional area of the metal portion when dicing along the short direction S can be reduced. Therefore, in the second connecting bars 12A and 12B, both the strength in the short direction S and the reduction of the time required for dicing along the short direction S can be achieved.
  • FIG. 6 is a diagram corresponding to FIG. 2 in the first embodiment.
  • the lead frame 1A according to the second embodiment is a lead frame used for manufacturing a SON type semiconductor device.
  • the other points are the same as those of the lead frame 1 according to the first embodiment.
  • the common components are denoted by the same reference numerals, and detailed description thereof is omitted.
  • the unit lead frame 10 includes a rectangular die pad 10a, a plurality of leads 10b, and a support bar 10c in plan view.
  • the lead 10 b is provided through a space so as to face two sides of the die pad 10 a along the longitudinal direction L, and is supported only by the first connecting bar 11.
  • the support bar 10c extends from each corner of the die pad 10a along the longitudinal direction L and is connected only to the second connecting bar 12 to support the die pad 10a.
  • the first connecting bar 11 extending along the longitudinal direction L is formed of a half-etched portion
  • the second connecting bar 12 extending along the lateral direction S includes the intersecting portion 14. All are made up of full metal parts.
  • the lead 10b is not connected to the second connecting bar 12 formed of the full metal part, and only the support bar 10c is connected.
  • the adjacent support bars 10c are already electrically connected by the die pad 10a. There is no problem even if it is short-circuited by burr.
  • the time required for dicing along the short direction S can be shortened. That is, in the lead frame 1A used for manufacturing the SON type semiconductor device, the time required for dicing can be significantly shortened.
  • the support bar 10c extends from the die pad 10a to the lead 10b and supports the die pad 10a via the lead 10b.
  • the lead 10b connected to the support bar 10c serves as a grounding terminal in the semiconductor device 2 (see FIG. 4C).
  • the lead frame 1B all the constituent members of the unit lead frame 10 are connected to the first connecting bar 11 extending along the longitudinal direction L, and are not connected to the second connecting bar 12. Accordingly, since there is no member of the unit lead frame 10 supported by the second connecting bar 12, no burr is generated on the cut surface in dicing along the short direction S. Therefore, it is possible to further shorten the dicing time along the shorter direction S than the lead frame 1A.
  • FIGS. 8 to 13 all correspond to the lower diagram of FIG. 1 in the first embodiment, and can be applied to manufacture of both QFN type and SON type semiconductor devices.
  • the second connecting bars 12 are all formed of a full metal portion from one end to the other end in the short direction S. Further, the remaining second connecting bar 12 is formed of a half-etched portion from one end to the other end in the short direction S. And the 2nd connecting bar 12 comprised from the full metal part from one end to the other end and the 2nd connecting bar 12 comprised from the half etching part from the one end to the other end are arrange
  • the strength in the short-side direction S can be ensured by a part of the second connecting bar 12 composed of a full metal part from one end to the other end. Furthermore, the remaining second connecting bar 12, which is composed of half-etched portions, can extend the life of the rotary blade. Therefore, in the lead frame 1C, it is possible to achieve both the strength in the short direction S and the life extension of the rotary blade.
  • the 2nd connecting bar 12 comprised all by the full metal part and the 2nd connecting bar 12 comprised all the half-etching parts are shown, the example arranged alternately one by one, It is not limited to this.
  • a plurality of parts made up of full metal parts and a part made up of all half-etched parts may be alternately arranged (for example, two full metal parts and two half-etched parts are arranged alternately).
  • one part may be arranged alternately after increasing the number of parts than the other part (for example, three full metal parts and two half-etched parts are alternately arranged).
  • first frame portion 13a (see FIG. 1) is away from the first frame portion 13a (see FIG. 1), many portions that are all composed of the full metal portion may be arranged in the central portion of the lead frame 1C having relatively low strength. Further, a large number of portions that are all formed of half-etched portions may be disposed on the peripheral portion of the lead frame 1C that is close to the first frame portion 13a and relatively high in strength. Furthermore, in the 2nd connecting bar 12 comprised by the full metal part, it does not need to be comprised by the full metal part from one end to the other end.
  • the second connecting bar 12 includes a portion composed of a full metal portion and a portion composed of a half-etched portion between one end and the other end in the short direction S.
  • a portion composed of a full metal portion and a portion composed of a half-etched portion between one end and the other end in the short direction S For example, as shown in FIG. 9, between one end and the other end, three full metal portions of the unit lead frame 10 and half-etched portions of one unit lead frame 10 are alternately arranged. It has been.
  • the life of the rotary blade can be extended.
  • the lead frame 1D is configured such that the full metal portion is disposed at all locations from one end to the other end in the short direction S when all the second connecting bars 12 are viewed as a whole.
  • the adjacent second connecting bars 12 are arranged so as to overlap each other so that there is no portion that is not a full metal portion in the entire short direction S.
  • the lead frame 1D can be prevented from bending in the short direction S. That is, in the lead frame 1D, both the strength in the short direction S and the extension of the life of the rotary blade can be achieved.
  • the lead frame 1E is arranged such that the full metal portion is concentrated inside the predetermined region 16a.
  • the band-like region 16a is inclined from both the longitudinal direction L and the short direction S in plan view, and a plurality of regions 16a are arranged in parallel.
  • the full metal portion corresponding to one width of the unit lead frame 10 is short in the width direction between the adjacent lead frames 1 ⁇ / b> E with two full metal portions corresponding to the width of the unit lead frame 10. S is shifted to S.
  • the length of the arranged full metal part and the width shifted in the short direction S are not limited to this.
  • the interval between adjacent regions 16a, the inclination angle of the region 16a, and the like are also arbitrary.
  • the lead frame 1F is an example in which a pair of band-shaped regions 16b that are inclined from both the longitudinal direction L and the short direction S in the second connecting bar 12 cross each other.
  • FIG. 11 shows an example in which a pair of regions 16b are crossed, a plurality of pairs of regions 16b may be crossed.
  • the lead frame 1G is an example in which the rhombic region 16c is uniformly distributed in the lead frame 1G in the second connecting bar 12.
  • FIG. 12 shows an example in which the rhombic regions 16c are uniformly distributed, it is not always necessary to distribute them uniformly.
  • the lead frame 1H in which the third embodiment and the fourth embodiment are combined will be described with reference to FIG.
  • the lead frame 1H as in the third embodiment, among the plurality of second connecting bars 12, some of the second connecting bars 12 are all made up of a full metal portion from one end to the other end in the short direction S.
  • the lead frame 1H has a region 16d in which the full metal portion is concentrated inside the remaining second connecting bar 12 as in the fourth embodiment.
  • FIG. 13 shows a case where a plurality of regions 16d are arranged in parallel, the configuration of the region 16d is not limited to this.
  • the lead frame 1 (1A to 1H) is a rectangular lead frame, and includes a plurality of unit lead frames 10 arranged in a matrix and adjacent unit lead frames 10 to each other.
  • a plurality of first connecting bars 11 extending in the longitudinal direction L of the lead frame 1 (1A to 1H) and the adjacent unit lead frames 10 are connected to each other, and the short direction S of the lead frame 1 (1A to 1H) is connected.
  • the thickest part of the second connecting bar 12 (12A, 12B) than the first connecting bar 11 is the thickest part of the lead frame 1 (1A to 1H). Is the same thickness. As a result, the strength of the lead frame 1 (1A to 1H) in the short direction S can be maximized.
  • the lead 10b is supported only by the first connecting bar 11 that is thinner than the second connecting bar 12 (12A, 12B). Thereby, the time required for dicing along the longitudinal direction L can be shortened.
  • the die pad 10a is supported only by the second connecting bar 12 that is thicker than the first connecting bar 11 using the support bar 10c. Thereby, the time required for dicing along the short direction S can be shortened.
  • the second connecting bar 12A (12B) has an inverted trapezoidal cross section, and the thickest part is the thickest part of the lead frame 1 (1A to 1H). Is the same thickness. Thereby, both the strength in the short direction S and the reduction of the time required for dicing along the short direction S can be achieved.
  • the intersecting portion 14 where the first connecting bar 11 and the second connecting bar 12 (12A, 12B) intersect is the second connecting bar 12 (12A, 12B).
  • the thickness is the same as the portion thicker than the first connecting bar 11 in FIG. Thereby, the bending along the short direction S of the lead frame 1 (1A, 1B) can be suppressed.
  • some of the second connecting bars 12 (12A, 12B) out of the plurality of second connecting bars 12 (12A, 12B) are from one end to the other end in the short direction S. All are thicker than the first connecting bar 11.
  • the remaining second connecting bars 12 (12A, 12B) all have the same thickness as the first connecting bar 11 from one end to the other end in the short direction S. Thereby, the intensity
  • the second connecting bar 12 (12A, 12B) is thicker than the first connecting bar 11 from one end to the other end in the short direction S.
  • a part and a part having the same thickness as the first connecting bar 11 are mixed and all the second connecting bars 12 (12A, 12B) are viewed as a whole, from one end to the other end in the short direction S
  • the thicker part than the 1st connecting bar 11 is arrange
  • At least a part of the second connecting bar 12 has a portion thicker than the first connecting bar 11, so that at least a part of the second connecting bar 12 is the first connecting bar. 11 is higher than rigidity.
  • the method of making the rigidity different is not limited to this, and it may be configured as in the fifth and sixth embodiments.
  • FIG. 14 is a plan view showing a lead frame 1I of the fifth embodiment.
  • the first connecting bar 11I and the second connecting bar 12I have the same thickness.
  • at least a part of the plurality of second connecting bars 12I has a portion wider than the first connecting bar 11I.
  • the width WL of all the second connecting bars 12I is wider than the width WS of the first connecting bars 11I.
  • the number of lead frames 1I smaller than the actual number of unit lead frames is shown.
  • the cross-sectional area of the second connecting bar 12I is larger than the cross-sectional area of the first connecting bar 11I, and the rigidity of the second connecting bar 12I is larger than the rigidity of the first connecting bar 11I. Even with such a configuration, it is possible to provide the lead frame 1I which is not easily bent in the short direction. Note that the narrow portion provided in the first connecting bar 11I may be provided in the region where the half-etched portion shown in FIGS. 8 to 13 is provided.
  • FIG. 15 is a plan view showing a lead frame 1J of the sixth embodiment.
  • the thickness and width of the second connecting bar 12J are equal to the thickness and width of the first connecting bar 11J, respectively.
  • the ratio A2 of the number of second connecting bars 12J to the longitudinal dimension LJ of the lead frame 1J is larger than the ratio A1 of the number of first connecting bars 11J to the transverse dimension SJ of the lead frame 1J. large.
  • the number of lead frames 1I smaller than the actual number of unit lead frames is shown.
  • the cross-sectional area of the second connecting bar 12J is equal to the cross-sectional area of the first connecting bar 11J, and the rigidity of the first connecting bar 11J and the second connecting bar 12J is equal.
  • the lead frame 1J is longer than the longitudinal direction. Hard to bend in the short direction.
  • the longitudinal dimension LJ of the lead frame 1J is twice the lateral dimension SJ of the lead frame 1J.
  • the number ratio A1 is 2 / SJ. That is, the lead frame 1J is less likely to bend 1.75 times (7/4 times) in the short direction than in the long direction. For this reason, the handleability of the lead frame 1J is high.

Abstract

Provided is a lead frame that suppresses bending. This lead frame is rectangular and comprises a plurality of unit lead frames, a plurality of first connecting bars, and a plurality of second connecting bars. The unit lead frames have die pads and a plurality of leads. The first connecting bars connect neighboring unit lead frames together and extend in the long direction of the lead frame. The second connecting bars connect neighboring unit lead frames together and extend in the short direction of the lead frame. At least some of the plurality of second connecting bars have portions that are more rigid than the first connecting bars.

Description

リードフレームLead frame
　開示の実施形態は、リードフレームに関する。  The disclosed embodiment relates to a lead frame.
　薄型の半導体装置として、例えばＱＦＮ（Quad Flat Non-leaded package）タイプの半導体装置や、ＳＯＮ（Small Outline Non-leaded package）タイプの半導体装置等が知られている。また、上述の薄型の半導体装置は、例えば、複数の半導体素子やボンディングワイヤが搭載されたリードフレームを一括で樹脂封止して、複数の半導体装置を一体的に形成した後に、半導体装置毎に切り離すダイシングを経て製造される。そして、かかるダイシングにおいて、コネクティングバーにより切断面にバリが発生することを抑制するため、あらかじめコネクティングバーをハーフエッチング加工する技術が知られている（例えば、特許文献１参照）。  As thin semiconductor devices, for example, QFN (Quad Flat Non-leaded package) type semiconductor devices, SON (Small Outline Non-leaded package) type semiconductor devices, and the like are known. In addition, the above-described thin semiconductor device, for example, collectively seals a lead frame on which a plurality of semiconductor elements and bonding wires are mounted, and integrally forms a plurality of semiconductor devices. Manufactured through dicing. And in this dicing, in order to suppress that a burr | flash generate | occur | produces in a cut surface with a connecting bar, the technique which carries out the half etching process of the connecting bar previously is known (for example, refer patent document 1).
日本国特開２００１－３２０００７号公報Japanese Unexamined Patent Publication No. 2001-320007
　しかしながら、従来のリードフレームのようにコネクティングバーがハーフエッチング加工されている場合、リードフレームの大判化等に伴って強度が低下し、リードフレームが撓む恐れがある。そして、かかる撓みにより、リードフレーム上に搭載された半導体素子やボンディングワイヤが破断したり欠落したりする恐れがある。  However, when the connecting bar is half-etched like a conventional lead frame, the strength of the lead frame decreases with the increase in size of the lead frame, and the lead frame may be bent. Such bending may cause a semiconductor element or a bonding wire mounted on the lead frame to be broken or missing.
　実施形態の一態様は、上記に鑑みてなされたものであって、短手方向の撓みが抑制されたリードフレームを提供することを目的とする。  One aspect of the embodiment has been made in view of the above, and an object thereof is to provide a lead frame in which bending in a short direction is suppressed.
　実施形態の一態様に係るリードフレームは、矩形状であって、複数の単位リードフレームと、複数の第１コネクティングバーと、複数の第２コネクティングバーと、を備える。前記単位リードフレームは、ダイパッドと複数のリードとを有する。前記第１コネクティングバーは、隣接する前記単位リードフレーム同士を連結し、前記リードフレームの長手方向に延びる。前記第２コネクティングバーは、隣接する前記単位リードフレーム同士を連結し、前記リードフレームの短手方向に延びる。そして、複数の前記第２コネクティングバーの少なくとも一部が、前記第１コネクティングバーよりも剛性の高い部位を有する。 A lead frame according to an aspect of the embodiment is rectangular and includes a plurality of unit lead frames, a plurality of first connecting bars, and a plurality of second connecting bars. The unit lead frame has a die pad and a plurality of leads. The first connecting bar connects adjacent unit lead frames and extends in the longitudinal direction of the lead frame. The second connecting bar connects adjacent unit lead frames and extends in a short direction of the lead frame. And at least one part of a plurality of said 2nd connecting bars has a part higher in rigidity than said 1st connecting bar.
　実施形態の一態様によれば、撓みを抑制するリードフレームを提供することができる。  According to one aspect of the embodiment, a lead frame that suppresses bending can be provided.
図１は、第１の実施形態に係るリードフレームの概念図である。FIG. 1 is a conceptual diagram of a lead frame according to the first embodiment. 図２は、第１の実施形態に係るリードフレームの拡大平面図である。FIG. 2 is an enlarged plan view of the lead frame according to the first embodiment. 図３Ａは、図２に示すＡ－Ａ線の矢視断面図である。3A is a cross-sectional view taken along line AA shown in FIG. 図３Ｂは、図２に示すＢ－Ｂ線の矢視断面図である。3B is a cross-sectional view taken along line BB shown in FIG. 図３Ｃは、図２に示すＣ－Ｃ線の矢視断面図である。3C is a cross-sectional view taken along the line CC shown in FIG. 図４Ａは、第１の実施形態に係るリードフレームを用いた半導体装置の一製造工程を示した概略断面図である。FIG. 4A is a schematic cross-sectional view showing one manufacturing process of the semiconductor device using the lead frame according to the first embodiment. 図４Ｂは、第１の実施形態に係るリードフレームを用いた半導体装置の次の製造工程を示した概略断面図である。FIG. 4B is a schematic cross-sectional view showing the next manufacturing process of the semiconductor device using the lead frame according to the first embodiment. 図４Ｃは、第１の実施形態に係るリードフレームを用いた半導体装置のさらに次の製造工程を示した概略断面図である。FIG. 4C is a schematic cross-sectional view showing a further subsequent manufacturing process of the semiconductor device using the lead frame according to the first embodiment. 図５Ａは、図２に示すＤ－Ｄ線の矢視断面図である。5A is a cross-sectional view taken along line DD shown in FIG. 図５Ｂは、第１の実施形態の変形例に係る図２のＤ－Ｄ線に相当する矢視断面図である。FIG. 5B is a cross-sectional view taken along the line DD in FIG. 2 according to a modification of the first embodiment. 図５Ｃは、第１の実施形態の別の変形例に係る図２のＤ－Ｄ線に相当する矢視断面図である。FIG. 5C is a cross-sectional view taken along the line DD in FIG. 2 according to another modification of the first embodiment. 図６は、第２の実施形態に係るリードフレームの拡大平面図である。FIG. 6 is an enlarged plan view of a lead frame according to the second embodiment. 図７は、第２の実施形態の変形例に係るリードフレームの拡大平面図である。FIG. 7 is an enlarged plan view of a lead frame according to a modification of the second embodiment. 図８は、第３の実施形態に係るリードフレームの概略平面図である。FIG. 8 is a schematic plan view of a lead frame according to the third embodiment. 図９は、第４の実施形態に係るリードフレームの概略平面図である。FIG. 9 is a schematic plan view of a lead frame according to the fourth embodiment. 図１０は、第４の実施形態の変形例に係るリードフレームの概略平面図である。FIG. 10 is a schematic plan view of a lead frame according to a modification of the fourth embodiment. 図１１は、第４の実施形態の別の変形例に係るリードフレームの概略平面図である。FIG. 11 is a schematic plan view of a lead frame according to another modification of the fourth embodiment. 図１２は、第４の実施形態のさらに別の変形例に係るリードフレームの概略平面図である。FIG. 12 is a schematic plan view of a lead frame according to still another modification of the fourth embodiment. 図１３は、第３の実施形態と第４の実施形態とを組み合わせたリードフレームの概略平面図である。FIG. 13 is a schematic plan view of a lead frame obtained by combining the third embodiment and the fourth embodiment. 図１４は、第５の実施形態に係るリードフレームの概略平面図である。FIG. 14 is a schematic plan view of a lead frame according to the fifth embodiment. 図１５は、第６の実施形態に係るリードフレームの概略平面図である。FIG. 15 is a schematic plan view of a lead frame according to the sixth embodiment.
　以下、添付図面を参照して、本願の開示するリードフレームの実施形態について説明する。なお、以下に示す各実施形態によりこの発明が限定されるものではない。  Hereinafter, embodiments of a lead frame disclosed in the present application will be described with reference to the accompanying drawings. In addition, this invention is not limited by each embodiment shown below.
＜第１の実施形態＞
　まず、図１を参照して第１の実施形態に係るリードフレームの概略を説明する。図１に示すように、第１の実施形態に係るリードフレーム１は、平面視で矩形状であり、複数の単位リードフレーム１０と、複数の第１コネクティングバー１１と、複数の第２コネクティングバー１２と、外枠１３とを備える。単位リードフレーム１０は、リードフレーム１にマトリックス状に並べられている。  <First Embodiment>
First, the outline of the lead frame according to the first embodiment will be described with reference to FIG. As shown in FIG. 1, the lead frame 1 according to the first embodiment is rectangular in plan view, and includes a plurality of unit lead frames 10, a plurality of first connecting bars 11, and a plurality of second connecting bars. 12 and an outer frame 13. The unit lead frames 10 are arranged in a matrix on the lead frame 1.
　第１コネクティングバー１１は、短手方向に隣接する単位リードフレーム１０同士を連結し、リードフレーム１の長手方向Ｌに沿って延びている。第２コネクティングバー１２は、長手方向に隣接する単位リードフレーム１０同士を連結し、リードフレーム１の短手方向Ｓに沿って延びている。外枠１３は、マトリックス状に並べられた単位リードフレーム１０の四方を囲むように設けられる。  The first connecting bar 11 connects the unit lead frames 10 adjacent in the lateral direction and extends along the longitudinal direction L of the lead frame 1. The second connecting bar 12 connects the unit lead frames 10 adjacent in the longitudinal direction and extends along the short direction S of the lead frame 1. The outer frame 13 is provided so as to surround four sides of the unit lead frames 10 arranged in a matrix.
　具体的には、外枠１３は、短手方向Ｓに延びる一対の第１枠部１３ａと、長手方向Ｌに延びる一対の第２枠部１３ｂとを有し、一対の第１枠部１３ａの間に第１コネクティングバー１１が延び、一対の第２枠部１３ｂの間に第２コネクティングバー１２が延びている。そして、リードフレーム１において、長手方向Ｌに延びる第１コネクティングバー１１にはハーフエッチング加工がなされている。  Specifically, the outer frame 13 has a pair of first frame portions 13a extending in the short direction S and a pair of second frame portions 13b extending in the longitudinal direction L, and the pair of first frame portions 13a. The first connecting bar 11 extends between them, and the second connecting bar 12 extends between the pair of second frame portions 13b. In the lead frame 1, the first connecting bar 11 extending in the longitudinal direction L is half-etched.
　リードフレームは薄く、長手方向に長い部材である。このため、リードフレームは長手方向に撓みやすい。従来のリードフレームにおいては、短手方向よりも撓みやすい長手方向に沿ってリードフレームが撓まないように、リードフレームの短手方向における両端部、すなわち一対の第２枠部を支持して各種製造工程が行われている。このため、リードフレームの加工中は、長手方向に撓みにくい、または、長手方向に撓みやすいことは問題にならないことに本発明者は気がついた。むしろ、リードフレームの加工中は短手方向に撓みやすい状況となっていることに本発明者は気がついた。特に、リードフレームの大判化等に伴って第２枠部１３ｂ同士の間隔が大きくなると短手方向に撓みやすい。  The lead frame is thin and long in the longitudinal direction. For this reason, the lead frame is easily bent in the longitudinal direction. In the conventional lead frame, various ends are supported by supporting both end portions in the short direction of the lead frame, that is, the pair of second frame portions, so that the lead frame does not bend along the longitudinal direction which is more flexible than the short direction. The manufacturing process is performed. For this reason, during the processing of the lead frame, the present inventor has realized that it is not a problem that it is difficult to bend in the longitudinal direction or that it is easily bent in the longitudinal direction. Rather, the inventor has noticed that the lead frame is easily bent in the short direction during processing. In particular, when the interval between the second frame portions 13b is increased with the enlargement of the lead frame or the like, the lead frame is easily bent in the short direction.
　そこで、第１の実施形態に係るリードフレーム１においては、短手方向Ｓに延びる第２コネクティングバー１２の剛性を第１コネクティングバー１１の剛性よりも高くした。具体的には、第２コネクティングバー１２にはハーフエッチング加工を行わず、第２コネクティングバー１２を第１コネクティングバー１１の少なくとも一部よりも厚くしている。これにより、リードフレーム１の短手方向Ｓに沿った撓みを抑制することができる。  Therefore, in the lead frame 1 according to the first embodiment, the rigidity of the second connecting bar 12 extending in the short direction S is made higher than the rigidity of the first connecting bar 11. Specifically, the second connecting bar 12 is not half-etched, and the second connecting bar 12 is thicker than at least a part of the first connecting bar 11. Thereby, the bending along the short direction S of the lead frame 1 can be suppressed.
　なお、本願明細書の平面図においては、理解を容易にするため、ハーフエッチング加工されていない部位を「フルメタル部」と称し、菱形模様のハッチングで示す。また、ハーフエッチング加工された部位を「ハーフエッチング部」と称し、斜線からなるハッチングで示す。  In the plan view of the present specification, for easy understanding, a portion that has not been half-etched is referred to as a “full metal portion” and is indicated by rhombus hatching. Further, the half-etched portion is referred to as a “half-etched portion” and is indicated by hatching with hatching.
　以下、第１の実施形態に係るリードフレーム１の詳細について図２等を用いて説明する。リードフレーム１は、ＱＦＮタイプの半導体装置の製造に用いられるリードフレームである。リードフレーム１は、銅や銅合金、鉄ニッケル合金等で構成される。リードフレーム１は、平面視で長方形状の金属板に、エッチング加工等が施されることにより形成される。  Hereinafter, details of the lead frame 1 according to the first embodiment will be described with reference to FIG. The lead frame 1 is a lead frame used for manufacturing a QFN type semiconductor device. The lead frame 1 is made of copper, a copper alloy, an iron nickel alloy, or the like. The lead frame 1 is formed by etching or the like on a rectangular metal plate in plan view.
　図２に示すように、単位リードフレーム１０は、第１コネクティングバー１１と第２コネクティングバー１２とに囲まれた部位であり、ダイパッド１０ａと、複数のリード１０ｂと、サポートバー１０ｃとを有する。平面視で矩形状のダイパッド１０ａは、単位リードフレーム１０の中央部分に設けられ、おもて面側に半導体素子２０を搭載可能である（図４Ａ参照）。  As shown in FIG. 2, the unit lead frame 10 is a portion surrounded by the first connecting bar 11 and the second connecting bar 12, and has a die pad 10a, a plurality of leads 10b, and a support bar 10c. The rectangular die pad 10a in plan view is provided in the central portion of the unit lead frame 10, and the semiconductor element 20 can be mounted on the front surface side (see FIG. 4A).
　複数のリード１０ｂは、ダイパッド１０ａの四辺にそれぞれ向かい合うように空間を介して設けられ、第１コネクティングバー１１または第２コネクティングバー１２に支持される。そして、リード１０ｂは、半導体素子２０の電極とボンディングワイヤ２１等で電気的に接続されることによって、半導体装置２の外部端子として機能する（図４Ａ、図４Ｃ参照）。  The plurality of leads 10b are provided through spaces so as to face the four sides of the die pad 10a, and are supported by the first connecting bar 11 or the second connecting bar 12. The lead 10b functions as an external terminal of the semiconductor device 2 by being electrically connected to the electrode of the semiconductor element 20 by the bonding wire 21 or the like (see FIGS. 4A and 4C).
　サポートバー１０ｃは、ダイパッド１０ａの各角部からそれぞれ外方に延び、第１コネクティングバー１１および第２コネクティングバー１２に接続されてダイパッド１０ａを支持する。このように、単位リードフレーム１０は、個々の半導体装置２（図４Ｃ参照）に対応する。そして、単位リードフレーム１０の周囲には、第１コネクティングバー１１と第２コネクティングバー１２とが格子状に配置されている。  The support bar 10c extends outward from each corner of the die pad 10a and is connected to the first connecting bar 11 and the second connecting bar 12 to support the die pad 10a. Thus, the unit lead frame 10 corresponds to each semiconductor device 2 (see FIG. 4C). Around the unit lead frame 10, a first connecting bar 11 and a second connecting bar 12 are arranged in a lattice pattern.
　第１コネクティングバー１１は、リードフレーム１における長手方向Ｌに沿って延び、短手方向Ｓに沿って隣接する単位リードフレーム１０同士を連結している。また、第１コネクティングバー１１は、両端で外枠１３の第１枠部１３ａ（図１参照）に接続されている。  The first connecting bar 11 extends along the longitudinal direction L of the lead frame 1 and connects adjacent unit lead frames 10 along the short direction S. Moreover, the 1st connecting bar 11 is connected to the 1st frame part 13a (refer FIG. 1) of the outer frame 13 at both ends.
　第２コネクティングバー１２は、リードフレーム１における短手方向Ｓに沿って延び、長手方向Ｌに沿って隣接する単位リードフレーム１０同士を連結している。また、第２コネクティングバー１２は、両端で外枠１３の第２枠部１３ｂ（図１参照）に接続されている。  The second connecting bar 12 extends along the short direction S of the lead frame 1 and connects adjacent unit lead frames 10 along the longitudinal direction L. Moreover, the 2nd connecting bar 12 is connected to the 2nd frame part 13b (refer FIG. 1) of the outer frame 13 at both ends.
　また、図２に示すように、第１コネクティングバー１１は幅Ｗ１が均等になるように形成され、第２コネクティングバー１２は幅Ｗ２が均等になるように形成されている。ここで、例えば幅Ｗ１と幅Ｗ２とは等しい。そして、第１コネクティングバー１１と第２コネクティングバー１２とは、交差部１４で互いに直交している。しかしながら、第１の実施形態においては、必ずしも幅Ｗ１とＷ２とが等しくなくてもよく、第１コネクティングバー１１と第２コネクティングバー１２とは直交していなくてもよい。  Further, as shown in FIG. 2, the first connecting bar 11 is formed so that the width W1 is uniform, and the second connecting bar 12 is formed so that the width W2 is uniform. Here, for example, the width W1 and the width W2 are equal. The first connecting bar 11 and the second connecting bar 12 are orthogonal to each other at the intersection 14. However, in the first embodiment, the widths W1 and W2 are not necessarily equal, and the first connecting bar 11 and the second connecting bar 12 do not have to be orthogonal.
　次に、図３Ａ～図３Ｃを参照して、リードフレーム１における各部の断面形状について説明する。なお、図３Ａ～図３Ｃにおいては、理解を容易にするため、各構成部材の境界線を破線で示している。  Next, the cross-sectional shape of each part in the lead frame 1 will be described with reference to FIGS. 3A to 3C. In FIGS. 3A to 3C, the boundary lines of the constituent members are indicated by broken lines for easy understanding.
　図３Ａに示すように、ダイパッド１０ａおよびリード１０ｂは、一部を除いてハーフエッチング加工が行われておらず、エッチング加工前の金属板の板厚と同じ厚さである。そして、ダイパッド１０ａの端部には、裏面側にハーフエッチング加工されたエッチング部１５ａが形成され、リード１０ｂの端部には、裏面側にハーフエッチング加工されたエッチング部１５ｂが形成されている。  As shown in FIG. 3A, the die pad 10a and the lead 10b are not half-etched except for a part, and have the same thickness as the metal plate before the etching process. An etched portion 15a that is half-etched on the back side is formed at the end of the die pad 10a, and an etched portion 15b that is half-etched on the back side is formed at the end of the lead 10b.
　そして、長手方向Ｌに沿って延びる第１コネクティングバー１１には、裏面側にハーフエッチング加工がなされ、エッチング部１５ｃが形成されている。すなわち、第１コネクティングバー１１は、エッチング加工前の金属板よりも薄くなり、剛性が低くなっている。  The first connecting bar 11 extending along the longitudinal direction L is half-etched on the back surface to form an etched portion 15c. That is, the first connecting bar 11 is thinner than the metal plate before the etching process and has a low rigidity.
　一方で、図３Ｂに示すように、短手方向Ｓに沿って延びる第２コネクティングバー１２にはハーフエッチング加工はなされておらず、エッチング加工前の金属板の板厚と同じ厚さである。すなわち、第２コネクティングバー１２は、第１コネクティングバー１１よりも厚く、剛性が高くなっている。これにより、第２コネクティングバー１２の断面積が第１コネクティングバー１１よりも大きいことから、リードフレーム１の短手方向Ｓの強度を向上させることができる。したがって、リードフレーム１が短手方向Ｓに撓むことを抑制することができる。  On the other hand, as shown in FIG. 3B, the second connecting bar 12 extending along the short direction S is not half-etched, and has the same thickness as the metal plate before the etching. That is, the 2nd connecting bar 12 is thicker than the 1st connecting bar 11, and rigidity is high. Thereby, since the cross-sectional area of the 2nd connecting bar 12 is larger than the 1st connecting bar 11, the intensity | strength of the transversal direction S of the lead frame 1 can be improved. Therefore, the lead frame 1 can be prevented from bending in the short direction S.
　また、図３Ｃに示すように、第１コネクティングバー１１（図２参照）と第２コネクティングバー１２とが互いに交差する交差部１４にはハーフエッチング加工はなされておらず、エッチング加工前の金属板の板厚と同じ厚さである。すなわち、短手方向Ｓに沿って延びる第２コネクティングバー１２は、交差部１４を含めて、一端から他端まですべてフルメタル部で構成されている。これにより、リードフレーム１が短手方向Ｓに撓むことを抑制することができる。  Moreover, as shown in FIG. 3C, the half-etching process is not performed at the intersection 14 where the first connecting bar 11 (see FIG. 2) and the second connecting bar 12 cross each other, and the metal plate before the etching process It is the same thickness as the plate thickness. That is, the second connecting bar 12 extending along the short-side direction S includes a full metal portion from one end to the other end including the intersecting portion 14. Thereby, it is possible to suppress the lead frame 1 from being bent in the short direction S.
　さらに、リードフレーム１において、第２コネクティングバー１２は、ダイパッド１０ａの主要部分と同じくフルメタル部で構成されている。これにより、所定の板厚を有する金属板からリードフレーム１を形成した場合において、第２コネクティングバー１２の厚さを最大化することができる。したがって、リードフレーム１の短手方向Ｓの強度を最大化することができる。  Furthermore, in the lead frame 1, the second connecting bar 12 is composed of a full metal portion, similar to the main portion of the die pad 10a. Thereby, when the lead frame 1 is formed from a metal plate having a predetermined plate thickness, the thickness of the second connecting bar 12 can be maximized. Therefore, the strength of the lead frame 1 in the short direction S can be maximized.
　次に、図４Ａ～図４Ｃを参照して、第１の実施形態に係るリードフレーム１を用いて半導体装置２を製造する方法について説明する。なお、図４Ａ～図４Ｃは、リードフレーム１において短手方向Ｓに沿った断面を示した概略断面図であり、各構成部材の境界線を破線で示している。  Next, a method for manufacturing the semiconductor device 2 using the lead frame 1 according to the first embodiment will be described with reference to FIGS. 4A to 4C. 4A to 4C are schematic cross-sectional views showing a cross section along the short direction S in the lead frame 1, and the boundary lines of the constituent members are indicated by broken lines.
　まず、図４Ａに示すように、リードフレーム１のダイパッド１０ａ上に、半導体素子２０を搭載し、半導体素子２０の各電極と、各電極に対応するリード１０ｂとの間を、それぞれボンディングワイヤ２１により電気的に接続する。次に、図４Ｂに示すように、リードフレーム１のおもて面側を、封止樹脂２２で一括に封止する。次に、各単位リードフレーム１０（図２参照）の間を、第１コネクティングバー１１および第２コネクティングバー１２（図２参照）に沿ったダイシングラインＤＬに沿って回転刃物でダイシングする。これにより、図４Ｃに示すように、個別の半導体装置２毎に分割される。  First, as shown in FIG. 4A, the semiconductor element 20 is mounted on the die pad 10a of the lead frame 1, and a bonding wire 21 is used between each electrode of the semiconductor element 20 and the lead 10b corresponding to each electrode. Connect electrically. Next, as shown in FIG. 4B, the front surface side of the lead frame 1 is collectively sealed with a sealing resin 22. Next, the unit lead frames 10 (see FIG. 2) are diced with a rotary blade along a dicing line DL along the first connecting bar 11 and the second connecting bar 12 (see FIG. 2). Thereby, as shown in FIG. 4C, the semiconductor device 2 is divided into individual semiconductor devices 2.
　ここで、図４Ｂに示すように、リードフレーム１においては、第１コネクティングバー１１にはエッチング部１５ｃにより凹部が設けられることから、長手方向Ｌ（図２参照）に沿ったダイシングの際の金属部分の断面積を小さくすることができる。これにより、長手方向Ｌに沿った場合のダイシングの速度を短手方向Ｓ（図２参照）の場合に比べて速くしたとしても、ダイシングの際に第１コネクティングバー１１により切断面にバリが発生することを抑制することができる。したがって、両方のコネクティングバーをすべてフルメタル部で構成する場合と比べて、ダイシングに要する時間の増加を抑制することができる。  Here, as shown in FIG. 4B, in the lead frame 1, the first connecting bar 11 is provided with a recess by the etching portion 15 c, so that the metal at the time of dicing along the longitudinal direction L (see FIG. 2) The cross-sectional area of the part can be reduced. Thus, even if the dicing speed along the longitudinal direction L is higher than that in the short direction S (see FIG. 2), burrs are generated on the cut surface by the first connecting bar 11 during dicing. Can be suppressed. Therefore, an increase in time required for dicing can be suppressed as compared with the case where both connecting bars are all formed of a full metal portion.
　さらに、リードフレーム１においては、ダイシングの際の金属部分の断面積が小さいため、ダイシングの際の回転刃物の摩耗を抑制することができる。したがって、回転刃物の寿命を長くすることができる。  Furthermore, in the lead frame 1, since the cross-sectional area of the metal part at the time of dicing is small, it is possible to suppress the wear of the rotary blade at the time of dicing. Therefore, the life of the rotary blade can be extended.
　一方で、リードフレーム１においては、第２コネクティングバー１２がフルメタル部で構成されている（図２参照）。したがって、両方のコネクティングバーをすべてハーフエッチング部で構成する場合と比べて、リードフレーム１の短手方向の撓みを抑制することができる。  On the other hand, in the lead frame 1, the second connecting bar 12 is composed of a full metal part (see FIG. 2). Therefore, it is possible to suppress the bending of the lead frame 1 in the short direction as compared with the case where both the connecting bars are all formed of the half-etched portion.
　なお、半導体装置２においては、ダイパッド１０ａとリード１０ｂとにそれぞれ設けられたエッチング部１５ａ、１５ｂに、封止樹脂２２が埋まるように樹脂封止されている。かかる構造により、半導体装置２において、ダイパッド１０ａやリード１０ｂが封止樹脂２２の裏面側から脱離することを防止することができる。  In the semiconductor device 2, the sealing resin 22 is embedded in the etching portions 15a and 15b provided in the die pad 10a and the lead 10b, respectively. With this structure, in the semiconductor device 2, it is possible to prevent the die pad 10 a and the lead 10 b from being detached from the back surface side of the sealing resin 22.
　次に、図５Ａ～図５Ｃを参照して、第１の実施形態にかかる第２コネクティングバー１２およびその変形例について説明する。なお、図５Ｂおよび図５Ｃにおいては、理解を容易にするため、図５Ａに示した断面の輪郭に対応する部分を破線で示す。  Next, the second connecting bar 12 according to the first embodiment and its modification will be described with reference to FIGS. 5A to 5C. In FIG. 5B and FIG. 5C, a portion corresponding to the cross-sectional outline shown in FIG. 5A is indicated by a broken line for easy understanding.
　図５Ａに示すように、第２コネクティングバー１２は、断面視で矩形状であり、換言するとすべてフルメタル部で構成される。かかる構造により、所定の板厚を有する金属板からリードフレーム１を形成し、幅Ｗ２を所定の値にした場合において、第２コネクティングバー１２の断面積を最大化することができる。したがって、リードフレーム１の短手方向Ｓの強度を最大化することができる。  As shown in FIG. 5A, the second connecting bar 12 has a rectangular shape in sectional view, in other words, is composed of a full metal part. With this structure, when the lead frame 1 is formed from a metal plate having a predetermined plate thickness and the width W2 is set to a predetermined value, the cross-sectional area of the second connecting bar 12 can be maximized. Therefore, the strength of the lead frame 1 in the short direction S can be maximized.
　一方で、第２コネクティングバー１２の構成は、図５Ａに示す構成に限定されない。例えば、図５Ｂに示す第２コネクティングバー１２Ａのように、側部の裏面側にハーフエッチング加工されたエッチング部１５ｄを形成してもよい。また、図５Ｃに示す第２コネクティングバー１２Ｂのように、側面が上に向かって末広がり形状を有するようにエッチング加工されたエッチング部１５ｅを形成してもよい。なお、エッチング部１５ｄ、１５ｅは、上述のエッチング部１５ａ～１５ｃ（図３Ａ参照）と同一のエッチング工程で形成することができる。  On the other hand, the configuration of the second connecting bar 12 is not limited to the configuration shown in FIG. 5A. For example, like the second connecting bar 12A shown in FIG. 5B, an etching portion 15d that is half-etched may be formed on the back side of the side portion. Further, as in the second connecting bar 12B shown in FIG. 5C, an etching portion 15e that is etched so that the side surface has a shape spreading toward the top may be formed. The etching parts 15d and 15e can be formed in the same etching process as the etching parts 15a to 15c (see FIG. 3A).
　そして、いずれの変形例においても、断面が逆台形状であり、中央部分がフルメタル部で構成されており、かかるフルメタル部により短手方向Ｓ（図２参照）の強度を確保することができる。さらに、いずれの変形例においても側部がエッチングされていることから、短手方向Ｓに沿ったダイシングの際の金属部分の断面積を小さくすることができる。したがって、第２コネクティングバー１２Ａ、１２Ｂにおいては、短手方向Ｓの強度と、短手方向Ｓに沿ったダイシングに要する時間の短縮とを両立することができる。  In any of the modified examples, the cross section is an inverted trapezoidal shape, and the central portion is formed of a full metal portion, and the strength in the short direction S (see FIG. 2) can be secured by the full metal portion. Furthermore, since the side portions are etched in any of the modifications, the cross-sectional area of the metal portion when dicing along the short direction S can be reduced. Therefore, in the second connecting bars 12A and 12B, both the strength in the short direction S and the reduction of the time required for dicing along the short direction S can be achieved.
＜第２の実施形態＞ 
　次に、図６を参照して第２の実施形態に係るリードフレーム１Ａについて説明する。なお、図６は、第１の実施形態における図２に対応する図である。  <Second Embodiment>
Next, a lead frame 1A according to a second embodiment will be described with reference to FIG. FIG. 6 is a diagram corresponding to FIG. 2 in the first embodiment.
　第２の実施形態に係るリードフレーム１Ａは、ＳＯＮタイプの半導体装置の製造に用いられるリードフレームである。その他の点は、第１の実施形態に係るリードフレーム１と同様であり、共通の構成については同一の符号を付して、詳細な説明は省略する。  The lead frame 1A according to the second embodiment is a lead frame used for manufacturing a SON type semiconductor device. The other points are the same as those of the lead frame 1 according to the first embodiment. The common components are denoted by the same reference numerals, and detailed description thereof is omitted.
　リードフレーム１Ａにおいて、単位リードフレーム１０は、平面視で矩形状のダイパッド１０ａと、複数のリード１０ｂと、サポートバー１０ｃとを有する。リード１０ｂは、長手方向Ｌに沿ったダイパッド１０ａの２辺に向かい合うように空間を介して設けられ、第１コネクティングバー１１にのみ支持される。また、サポートバー１０ｃは、ダイパッド１０ａの各角部からそれぞれ長手方向Ｌに沿って延び、第２コネクティングバー１２にのみ接続されて、ダイパッド１０ａを支持している。  In the lead frame 1A, the unit lead frame 10 includes a rectangular die pad 10a, a plurality of leads 10b, and a support bar 10c in plan view. The lead 10 b is provided through a space so as to face two sides of the die pad 10 a along the longitudinal direction L, and is supported only by the first connecting bar 11. The support bar 10c extends from each corner of the die pad 10a along the longitudinal direction L and is connected only to the second connecting bar 12 to support the die pad 10a.
　そして、第１の実施形態と同様に、長手方向Ｌに沿って延びる第１コネクティングバー１１はハーフエッチング部で構成され、短手方向Ｓに沿って延びる第２コネクティングバー１２は交差部１４を含めてすべてフルメタル部で構成されている。  As in the first embodiment, the first connecting bar 11 extending along the longitudinal direction L is formed of a half-etched portion, and the second connecting bar 12 extending along the lateral direction S includes the intersecting portion 14. All are made up of full metal parts.
　さらに、リードフレーム１Ａにおいては、フルメタル部で構成された第２コネクティングバー１２にはリード１０ｂが接続されておらず、サポートバー１０ｃのみが接続されている。これにより、短手方向Ｓに沿ったダイシングにおいて、第２コネクティングバー１２により切断面にバリが発生したとしても、隣接するサポートバー１０ｃ同士はすでにダイパッド１０ａで電気的に接続されていることから、バリにより短絡しても支障はない。  Furthermore, in the lead frame 1A, the lead 10b is not connected to the second connecting bar 12 formed of the full metal part, and only the support bar 10c is connected. Thereby, in dicing along the short direction S, even if burrs occur on the cut surface by the second connecting bar 12, the adjacent support bars 10c are already electrically connected by the die pad 10a. There is no problem even if it is short-circuited by burr.
　したがって、バリの発生以外の問題が生じない程度にダイシングの速度を速くすることができることから、短手方向Ｓに沿ったダイシングに要する時間を短くすることができる。すなわち、ＳＯＮタイプの半導体装置の製造に用いられるリードフレーム１Ａにおいては、ダイシングに要する時間を大幅に短くすることができる。  Therefore, since the dicing speed can be increased to such an extent that problems other than the occurrence of burrs do not occur, the time required for dicing along the short direction S can be shortened. That is, in the lead frame 1A used for manufacturing the SON type semiconductor device, the time required for dicing can be significantly shortened.
　次に、図７を参照して、第２の実施形態の変形例にかかるリードフレーム１Ｂについて説明する。リードフレーム１Ｂにおいて、サポートバー１０ｃは、ダイパッド１０ａからリード１０ｂに延び、リード１０ｂを介してダイパッド１０ａを支持している。ここで、サポートバー１０ｃに接続されたリード１０ｂは、半導体装置２（図４Ｃ参照）において接地用の端子となる。  Next, a lead frame 1B according to a modification of the second embodiment will be described with reference to FIG. In the lead frame 1B, the support bar 10c extends from the die pad 10a to the lead 10b and supports the die pad 10a via the lead 10b. Here, the lead 10b connected to the support bar 10c serves as a grounding terminal in the semiconductor device 2 (see FIG. 4C).
　すなわち、リードフレーム１Ｂにおいて、単位リードフレーム１０の構成部材はすべて長手方向Ｌに沿って延びる第１コネクティングバー１１に接続されており、第２コネクティングバー１２には接続されていない。これにより、第２コネクティングバー１２に支持される単位リードフレーム１０の部材自体がないことから、短手方向Ｓに沿ったダイシングにおいて切断面でバリは発生しない。したがって、リードフレーム１Ａよりも短手方向Ｓに沿ったダイシングの時間をさらに短くすることができる。  That is, in the lead frame 1B, all the constituent members of the unit lead frame 10 are connected to the first connecting bar 11 extending along the longitudinal direction L, and are not connected to the second connecting bar 12. Accordingly, since there is no member of the unit lead frame 10 supported by the second connecting bar 12, no burr is generated on the cut surface in dicing along the short direction S. Therefore, it is possible to further shorten the dicing time along the shorter direction S than the lead frame 1A.
＜第３の実施形態＞ 
　次に、図８を参照して第３の実施形態に係るリードフレーム１Ｃについて説明する。なお、図８～図１３は、すべて第１の実施形態における図１の下図に対応する図であり、ＱＦＮタイプ、ＳＯＮタイプいずれの半導体装置の製造にも適用可能である。  <Third Embodiment>
Next, a lead frame 1C according to a third embodiment will be described with reference to FIG. FIGS. 8 to 13 all correspond to the lower diagram of FIG. 1 in the first embodiment, and can be applied to manufacture of both QFN type and SON type semiconductor devices.
　リードフレーム１Ｃにおいて、複数の第２コネクティングバー１２のうち、一部の第２コネクティングバー１２は、短手方向Ｓにおける一端から他端まですべてフルメタル部で構成されている。また、残りの第２コネクティングバー１２は、短手方向Ｓにおける一端から他端まですべてハーフエッチング部で構成されている。そして、一端から他端まですべてフルメタル部で構成された第２コネクティングバー１２と、一端から他端まですべてハーフエッチング部で構成された第２コネクティングバー１２とが、交互に並んで配置されている。  In the lead frame 1 </ b> C, among the plurality of second connecting bars 12, some of the second connecting bars 12 are all formed of a full metal portion from one end to the other end in the short direction S. Further, the remaining second connecting bar 12 is formed of a half-etched portion from one end to the other end in the short direction S. And the 2nd connecting bar 12 comprised from the full metal part from one end to the other end and the 2nd connecting bar 12 comprised from the half etching part from the one end to the other end are arrange | positioned alternately. .
　ここで、リードフレーム１Ｃにおいては、一端から他端まですべてフルメタル部で構成された一部の第２コネクティングバー１２により、短手方向Ｓの強度を確保することができる。さらに、すべてハーフエッチング部で構成された残りの第２コネクティングバー１２により、回転刃物の寿命を長くすることができる。したがって、リードフレーム１Ｃにおいては、短手方向Ｓの強度と回転刃物の長寿命化とを両立することができる。  Here, in the lead frame 1C, the strength in the short-side direction S can be ensured by a part of the second connecting bar 12 composed of a full metal part from one end to the other end. Furthermore, the remaining second connecting bar 12, which is composed of half-etched portions, can extend the life of the rotary blade. Therefore, in the lead frame 1C, it is possible to achieve both the strength in the short direction S and the life extension of the rotary blade.
　なお、図８においては、すべてフルメタル部で構成された第２コネクティングバー１２と、すべてハーフエッチング部で構成された第２コネクティングバー１２とを１本ずつ交互に並べた例を示しているが、これに限定されるものではない。例えば、すべてフルメタル部で構成された部位と、すべてハーフエッチング部で構成された部位とを複数本ずつ交互に並べてもよい（例：フルメタル部２本とハーフエッチング部２本とを交互に配列）。また、一方の部位を他方の部位よりも本数を多くした上で交互に並べてもよい（例：フルメタル部３本とハーフエッチング部２本とを交互に配列）。  In addition, in FIG. 8, although the 2nd connecting bar 12 comprised all by the full metal part and the 2nd connecting bar 12 comprised all the half-etching parts are shown, the example arranged alternately one by one, It is not limited to this. For example, a plurality of parts made up of full metal parts and a part made up of all half-etched parts may be alternately arranged (for example, two full metal parts and two half-etched parts are arranged alternately). . Further, one part may be arranged alternately after increasing the number of parts than the other part (for example, three full metal parts and two half-etched parts are alternately arranged).
　また、第１枠部１３ａ（図１参照）から離れているため相対的に強度が低いリードフレーム１Ｃの中央部分に、すべてフルメタル部で構成された部位を多く配置してもよい。さらに、第１枠部１３ａに近く相対的に強度が高いリードフレーム１Ｃの周縁部分に、すべてハーフエッチング部で構成された部位を多く配置してもよい。さらに、フルメタル部で構成された第２コネクティングバー１２において、一端から他端まですべてフルメタル部で構成されていなくてもよい。  Further, since the first frame portion 13a (see FIG. 1) is away from the first frame portion 13a (see FIG. 1), many portions that are all composed of the full metal portion may be arranged in the central portion of the lead frame 1C having relatively low strength. Further, a large number of portions that are all formed of half-etched portions may be disposed on the peripheral portion of the lead frame 1C that is close to the first frame portion 13a and relatively high in strength. Furthermore, in the 2nd connecting bar 12 comprised by the full metal part, it does not need to be comprised by the full metal part from one end to the other end.
＜第４の実施形態＞ 
　次に、図９を参照して第４の実施形態に係るリードフレーム１Ｄについて説明する。  <Fourth Embodiment>
Next, a lead frame 1D according to a fourth embodiment will be described with reference to FIG.
　リードフレーム１Ｄにおいて、第２コネクティングバー１２は、短手方向Ｓの一端から他端までの間に、フルメタル部で構成された部位とハーフエッチング部で構成された部位とが混在している。例えば、図９に示すように、一端から他端までの間に、単位リードフレーム１０の幅３個分のフルメタル部と、単位リードフレーム１０の幅１個分のハーフエッチング部とが交互に並べられている。このように、第２コネクティングバー１２の一部にハーフエッチング部を設けることにより、回転刃物の寿命を長くすることができる。  In the lead frame 1D, the second connecting bar 12 includes a portion composed of a full metal portion and a portion composed of a half-etched portion between one end and the other end in the short direction S. For example, as shown in FIG. 9, between one end and the other end, three full metal portions of the unit lead frame 10 and half-etched portions of one unit lead frame 10 are alternately arranged. It has been. Thus, by providing a half-etched part in a part of the second connecting bar 12, the life of the rotary blade can be extended.
　また、リードフレーム１Ｄにおいては、すべての第２コネクティングバー１２を全体で見た場合に、短手方向Ｓの一端から他端までのすべての箇所にフルメタル部が配置されるように構成されている。例えば、図９に示すように、隣接する第２コネクティングバー１２同士において、短手方向Ｓ全体でフルメタル部でない箇所がないように重ね合わせて配置している。  Further, the lead frame 1D is configured such that the full metal portion is disposed at all locations from one end to the other end in the short direction S when all the second connecting bars 12 are viewed as a whole. . For example, as shown in FIG. 9, the adjacent second connecting bars 12 are arranged so as to overlap each other so that there is no portion that is not a full metal portion in the entire short direction S.
　かかるフルメタル部の配置により、すべての第２コネクティングバー１２を全体で見た場合に、撓みやすい薄い部位をリードフレーム１Ｄからなくすことができる。したがって、リードフレーム１Ｄが短手方向Ｓに撓むことを抑制することができる。すなわち、リードフレーム１Ｄにおいては、短手方向Ｓの強度と、回転刃物の長寿命化とを両立することができる。  With the arrangement of the full metal portion, it is possible to eliminate a thin portion that is easily bent from the lead frame 1D when all the second connecting bars 12 are viewed as a whole. Therefore, the lead frame 1D can be prevented from bending in the short direction S. That is, in the lead frame 1D, both the strength in the short direction S and the extension of the life of the rotary blade can be achieved.
　次に、図１０を参照して第４の実施形態の変形例に係るリードフレーム１Ｅについて説明する。リードフレーム１Ｅは、各第２コネクティングバー１２において、フルメタル部を所定の領域１６ａの内部に集中させて配置している。また、リードフレーム１Ｅにおいては、平面視で帯状の領域１６ａを長手方向Ｌおよび短手方向Ｓのいずれからも傾斜させるとともに、複数の領域１６ａを平行に配置している。  Next, a lead frame 1E according to a modification of the fourth embodiment will be described with reference to FIG. In each second connecting bar 12, the lead frame 1E is arranged such that the full metal portion is concentrated inside the predetermined region 16a. In the lead frame 1E, the band-like region 16a is inclined from both the longitudinal direction L and the short direction S in plan view, and a plurality of regions 16a are arranged in parallel.
　なお、図１０に示した領域１６ａにおいては、それぞれ単位リードフレーム１０の幅２個分のフルメタル部が隣接するリードフレーム１Ｅ間で、フルメタル部が単位リードフレーム１０の幅１個分ずつ短手方向Ｓにずれて配置されている。しかしながら、配置されるフルメタル部の長さや短手方向Ｓにずれる幅はこれに限られない。また、隣接する領域１６ａ同士の間隔や、領域１６ａの傾斜角度等も任意である。  In the region 16 a shown in FIG. 10, the full metal portion corresponding to one width of the unit lead frame 10 is short in the width direction between the adjacent lead frames 1 </ b> E with two full metal portions corresponding to the width of the unit lead frame 10. S is shifted to S. However, the length of the arranged full metal part and the width shifted in the short direction S are not limited to this. Further, the interval between adjacent regions 16a, the inclination angle of the region 16a, and the like are also arbitrary.
　次に、図１１を参照して第４の実施形態の別の変形例に係るリードフレーム１Ｆについて説明する。リードフレーム１Ｆは、第２コネクティングバー１２において、長手方向Ｌおよび短手方向Ｓのいずれからも傾斜させた一対の帯状の領域１６ｂを、互いに交差させた例である。なお、図１１には領域１６ｂを一対交差させた例について示しているが、領域１６ｂを複数対交差させてもよい。  Next, a lead frame 1F according to another modification of the fourth embodiment will be described with reference to FIG. The lead frame 1F is an example in which a pair of band-shaped regions 16b that are inclined from both the longitudinal direction L and the short direction S in the second connecting bar 12 cross each other. Although FIG. 11 shows an example in which a pair of regions 16b are crossed, a plurality of pairs of regions 16b may be crossed.
　次に、図１２を参照して第４の実施形態のさらに別の変形例に係るリードフレーム１Ｇについて説明する。リードフレーム１Ｇは、第２コネクティングバー１２において、菱形状の領域１６ｃをリードフレーム１Ｇ内に一様に分布させた例である。なお、図１２には菱形状の領域１６ｃを一様に分布させた例について示しているが、必ずしも一様に分布させなくともよい。また、菱形状以外の形状の領域１６ｃを分布させてもよい。例えば、三角形状や矩形形状等の領域１６ｃを分布させてもよい。また、領域１６ｃの大きさは任意である。  Next, a lead frame 1G according to still another modification of the fourth embodiment will be described with reference to FIG. The lead frame 1G is an example in which the rhombic region 16c is uniformly distributed in the lead frame 1G in the second connecting bar 12. Although FIG. 12 shows an example in which the rhombic regions 16c are uniformly distributed, it is not always necessary to distribute them uniformly. Moreover, you may distribute the area | region 16c of shapes other than a rhombus shape. For example, regions 16c having a triangular shape or a rectangular shape may be distributed. Further, the size of the region 16c is arbitrary.
　次に、図１３を参照して第３の実施形態と第４の実施形態とを組み合わせたリードフレーム１Ｈについて説明する。リードフレーム１Ｈは、第３の実施形態と同様に、複数の第２コネクティングバー１２のうち、一部の第２コネクティングバー１２は、短手方向Ｓにおける一端から他端まですべてフルメタル部で構成される。さらに、リードフレーム１Ｈは、第４の実施形態と同様に、残りの第２コネクティングバー１２において、内部にフルメタル部を集中させた領域１６ｄを有する。図１３では、複数の領域１６ｄが平行に配置された場合について示しているが、領域１６ｄの構成はこれに限られない。  Next, a lead frame 1H in which the third embodiment and the fourth embodiment are combined will be described with reference to FIG. In the lead frame 1H, as in the third embodiment, among the plurality of second connecting bars 12, some of the second connecting bars 12 are all made up of a full metal portion from one end to the other end in the short direction S. The Furthermore, the lead frame 1H has a region 16d in which the full metal portion is concentrated inside the remaining second connecting bar 12 as in the fourth embodiment. Although FIG. 13 shows a case where a plurality of regions 16d are arranged in parallel, the configuration of the region 16d is not limited to this.
　以上、本発明の各実施形態について説明したが、本発明は上述の各実施形態に限定されるものではなく、その趣旨を逸脱しない限りにおいて種々の変更が可能である。例えば、上述の各実施形態においては、ＱＦＮタイプやＳＯＮタイプの半導体装置の製造に用いるリードフレームについて説明したが、その他のタイプの半導体装置の製造に用いてもよい。  As mentioned above, although each embodiment of this invention was described, this invention is not limited to each above-mentioned embodiment, A various change is possible unless it deviates from the meaning. For example, in each of the above-described embodiments, the lead frame used for manufacturing a QFN type or SON type semiconductor device has been described. However, the lead frame may be used for manufacturing other types of semiconductor devices.
　以上のように、実施形態に係るリードフレーム１（１Ａ～１Ｈ）は、矩形状のリードフレームであって、マトリックス状に並べられた複数の単位リードフレーム１０と、隣接する単位リードフレーム１０同士を連結し、リードフレーム１（１Ａ～１Ｈ）の長手方向Ｌに延びる複数の第１コネクティングバー１１と、隣接する単位リードフレーム１０同士を連結し、リードフレーム１（１Ａ～１Ｈ）の短手方向Ｓに延びる複数の第２コネクティングバー１２（１２Ａ、１２Ｂ）とを備える。そして、複数の第２コネクティングバー１２（１２Ａ、１２Ｂ）の少なくとも一部が、第１コネクティングバー１１よりも厚い部位を有する。これにより、リードフレーム１（１Ａ～１Ｈ）の短手方向Ｓに沿った撓みを抑制することができる。 As described above, the lead frame 1 (1A to 1H) according to the embodiment is a rectangular lead frame, and includes a plurality of unit lead frames 10 arranged in a matrix and adjacent unit lead frames 10 to each other. A plurality of first connecting bars 11 extending in the longitudinal direction L of the lead frame 1 (1A to 1H) and the adjacent unit lead frames 10 are connected to each other, and the short direction S of the lead frame 1 (1A to 1H) is connected. And a plurality of second connecting bars 12 (12A, 12B). Then, at least a part of the plurality of second connecting bars 12 (12 </ b> A, 12 </ b> B) has a portion thicker than the first connecting bar 11. Thereby, the bending along the short direction S of the lead frame 1 (1A to 1H) can be suppressed.
　また、実施形態に係るリードフレーム１（１Ａ～１Ｈ）において、第２コネクティングバー１２（１２Ａ、１２Ｂ）における第１コネクティングバー１１よりも厚い部位は、リードフレーム１（１Ａ～１Ｈ）の最も厚い部位と同じ厚さである。これにより、リードフレーム１（１Ａ～１Ｈ）の短手方向Ｓの強度を最大化することができる。  In the lead frame 1 (1A to 1H) according to the embodiment, the thickest part of the second connecting bar 12 (12A, 12B) than the first connecting bar 11 is the thickest part of the lead frame 1 (1A to 1H). Is the same thickness. As a result, the strength of the lead frame 1 (1A to 1H) in the short direction S can be maximized.
　また、実施形態に係るリードフレーム１Ａ（１Ｂ）において、リード１０ｂは、第２コネクティングバー１２（１２Ａ、１２Ｂ）よりも薄い第１コネクティングバー１１にのみ支持されている。これにより、長手方向Ｌに沿ったダイシングに要する時間を短くすることができる。  In the lead frame 1A (1B) according to the embodiment, the lead 10b is supported only by the first connecting bar 11 that is thinner than the second connecting bar 12 (12A, 12B). Thereby, the time required for dicing along the longitudinal direction L can be shortened.
　また、実施形態に係るリードフレーム１Ａにおいて、ダイパッド１０ａは、サポートバー１０ｃを用いて第１コネクティングバー１１よりも厚い第２コネクティングバー１２にのみ支持されている。これにより、短手方向Ｓに沿ったダイシングに要する時間を短くすることができる。  In the lead frame 1A according to the embodiment, the die pad 10a is supported only by the second connecting bar 12 that is thicker than the first connecting bar 11 using the support bar 10c. Thereby, the time required for dicing along the short direction S can be shortened.
　また、実施形態に係るリードフレーム１（１Ａ～１Ｈ）において、第２コネクティングバー１２Ａ（１２Ｂ）は、断面が逆台形状であり、最も厚い部分がリードフレーム１（１Ａ～１Ｈ）の最も厚い部位と同じ厚さである。これにより、短手方向Ｓの強度と、短手方向Ｓに沿ったダイシングに要する時間の短縮とを両立することができる。  In the lead frame 1 (1A to 1H) according to the embodiment, the second connecting bar 12A (12B) has an inverted trapezoidal cross section, and the thickest part is the thickest part of the lead frame 1 (1A to 1H). Is the same thickness. Thereby, both the strength in the short direction S and the reduction of the time required for dicing along the short direction S can be achieved.
　また、実施形態に係るリードフレーム１（１Ａ、１Ｂ）において、第１コネクティングバー１１と第２コネクティングバー１２（１２Ａ、１２Ｂ）とが交差する交差部１４は、第２コネクティングバー１２（１２Ａ、１２Ｂ）における第１コネクティングバー１１よりも厚い部位と同じ厚さである。これにより、リードフレーム１（１Ａ、１Ｂ）の短手方向Ｓに沿った撓みを抑制することができる。  In the lead frame 1 (1A, 1B) according to the embodiment, the intersecting portion 14 where the first connecting bar 11 and the second connecting bar 12 (12A, 12B) intersect is the second connecting bar 12 (12A, 12B). The thickness is the same as the portion thicker than the first connecting bar 11 in FIG. Thereby, the bending along the short direction S of the lead frame 1 (1A, 1B) can be suppressed.
　また、実施形態に係るリードフレーム１Ｃにおいて、複数の第２コネクティングバー１２（１２Ａ、１２Ｂ）のうち一部の第２コネクティングバー１２（１２Ａ、１２Ｂ）は、短手方向Ｓの一端から他端まですべて第１コネクティングバー１１よりも厚い。また、残りの第２コネクティングバー１２（１２Ａ、１２Ｂ）は、短手方向Ｓの一端から他端まですべて第１コネクティングバー１１と同じ厚さである。これにより、短手方向Ｓの強度と、回転刃物の長寿命化とを両立することができる。  Further, in the lead frame 1C according to the embodiment, some of the second connecting bars 12 (12A, 12B) out of the plurality of second connecting bars 12 (12A, 12B) are from one end to the other end in the short direction S. All are thicker than the first connecting bar 11. The remaining second connecting bars 12 (12A, 12B) all have the same thickness as the first connecting bar 11 from one end to the other end in the short direction S. Thereby, the intensity | strength of the transversal direction S and the lifetime improvement of a rotary blade can be made compatible.
　また、実施形態に係るリードフレーム１Ｄ（１Ｅ～１Ｈ）において、第２コネクティングバー１２（１２Ａ、１２Ｂ）は、短手方向Ｓの一端から他端までの間に、第１コネクティングバー１１よりも厚い部位と、第１コネクティングバー１１と同じ厚さである部位とが混在し、すべての第２コネクティングバー１２（１２Ａ、１２Ｂ）を全体で見た場合に、短手方向Ｓの一端から他端までのすべての箇所に、第１コネクティングバー１１よりも厚い部位が配置されている。これにより、短手方向Ｓの強度と、回転刃物の長寿命化とを両立することができる。  In the lead frame 1D (1E to 1H) according to the embodiment, the second connecting bar 12 (12A, 12B) is thicker than the first connecting bar 11 from one end to the other end in the short direction S. When a part and a part having the same thickness as the first connecting bar 11 are mixed and all the second connecting bars 12 (12A, 12B) are viewed as a whole, from one end to the other end in the short direction S The thicker part than the 1st connecting bar 11 is arrange | positioned in all the places. Thereby, the intensity | strength of the transversal direction S and the lifetime improvement of a rotary blade can be made compatible.
　上述した第１～第４実施形態においては、第２コネクティングバー１２の少なくとも一部が第１コネクティングバー１１よりも厚い部位を有することにより、第２コネクティングバー１２の少なくとも一部が第１コネクティングバー１１の剛性より高くされている。しかし、剛性を異ならせる手法はこれに限られず、第５実施形態および第６実施形態のように構成してもよい。 In the first to fourth embodiments described above, at least a part of the second connecting bar 12 has a portion thicker than the first connecting bar 11, so that at least a part of the second connecting bar 12 is the first connecting bar. 11 is higher than rigidity. However, the method of making the rigidity different is not limited to this, and it may be configured as in the fifth and sixth embodiments.
　図１４は、第５実施形態のリードフレーム１Ｉを示す平面図である。図１４に示すリードフレーム１Ｉにおいて、第１コネクティングバー１１Ｉおよび第２コネクティングバー１２Ｉは厚みが等しい。図１４に示すように、複数の第２コネクティングバー１２Ｉの少なくとも一部が、第１コネクティングバー１１Ｉよりも幅広の部位を有している。図示の例では、全ての第２コネクティングバー１２Ｉの幅ＷＬが第１コネクティングバー１１Ｉの幅ＷＳより広い。なお、図１４においては、説明をわかりやすくするために、実際の単位リードフレームの個数よりも少ないリードフレーム１Ｉを示している。 FIG. 14 is a plan view showing a lead frame 1I of the fifth embodiment. In the lead frame 1I shown in FIG. 14, the first connecting bar 11I and the second connecting bar 12I have the same thickness. As shown in FIG. 14, at least a part of the plurality of second connecting bars 12I has a portion wider than the first connecting bar 11I. In the illustrated example, the width WL of all the second connecting bars 12I is wider than the width WS of the first connecting bars 11I. In FIG. 14, for the sake of easy understanding, the number of lead frames 1I smaller than the actual number of unit lead frames is shown.
　第２コネクティングバー１２Ｉの断面積が第１コネクティングバー１１Ｉの断面積より大きく、第２コネクティングバー１２Ｉの剛性が第１コネクティングバー１１Ｉの剛性より大きい。このような構成によっても、短手方向に撓みにくいリードフレーム１Ｉを提供することができる。なお、第１コネクティングバー１１Ｉに設ける幅狭の部位を、図８～図１３で示したハーフエッチング部が設けられる領域に設けてもよい。 The cross-sectional area of the second connecting bar 12I is larger than the cross-sectional area of the first connecting bar 11I, and the rigidity of the second connecting bar 12I is larger than the rigidity of the first connecting bar 11I. Even with such a configuration, it is possible to provide the lead frame 1I which is not easily bent in the short direction. Note that the narrow portion provided in the first connecting bar 11I may be provided in the region where the half-etched portion shown in FIGS. 8 to 13 is provided.
　図１５は、第６実施形態のリードフレーム１Ｊを示す平面図である。図１５に示すリードフレーム１Ｊにおいて、第２コネクティングバー１２Jの厚みおよび幅が第１コネクティングバー１１Jの厚みおよび幅とそれぞれ等しい。図１５に示すように、リードフレーム１Ｊの長手方向寸法ＬＪに対する第２コネクティングバー１２Ｊの個数の比Ａ２が、リードフレーム１Ｊの短手方向寸法ＳＪに対する第１コネクティングバー１１Ｊの個数の比Ａ１よりも大きい。なお、図１５においては、説明をわかりやすくするために、実際の単位リードフレームの個数よりも少ないリードフレーム１Ｉを示している。 FIG. 15 is a plan view showing a lead frame 1J of the sixth embodiment. In the lead frame 1J shown in FIG. 15, the thickness and width of the second connecting bar 12J are equal to the thickness and width of the first connecting bar 11J, respectively. As shown in FIG. 15, the ratio A2 of the number of second connecting bars 12J to the longitudinal dimension LJ of the lead frame 1J is larger than the ratio A1 of the number of first connecting bars 11J to the transverse dimension SJ of the lead frame 1J. large. In FIG. 15, for the sake of easy understanding, the number of lead frames 1I smaller than the actual number of unit lead frames is shown.
　第２コネクティングバー１２Ｊの断面積が第１コネクティングバー１１Ｊの断面積と等しく、第１コネクティングバー１１Ｊと第２コネクティングバー１２Ｊの剛性は等しい。しかし、単位長さ当たりの第２コネクティングバー１２Ｊの個数［個／ｍ］が単位長さ当たりの第１コネクティングバー１１Ｊの個数［個／ｍ］よりも多いため、リードフレーム１Ｊは長手方向よりも短手方向に撓みにくい。
　図１５においては、リードフレーム１Ｊの長手方向寸法ＬＪがリードフレーム１Ｊの短手方向寸法ＳＪの二倍である。第１コネクティングバー１１Ｊが２個、第２コネクティングバー１２Ｊが７個である。つまり、リードフレーム１Ｊの長手方向寸法ＬＪに対する第２コネクティングバー１２Ｊの個数の比Ａ２は７／ＬＪ＝７／（２ＳＪ）であり、リードフレーム１Ｊの短手方向寸法ＳＪに対する第１コネクティングバー１１Ｊの個数の比Ａ１は２／ＳＪである。つまり、リードフレーム１Ｊは、短手方向は長手方向よりも１．７５倍（７／４倍）撓みにくくされている。このため、リードフレーム１Ｊの取扱性が高い。 The cross-sectional area of the second connecting bar 12J is equal to the cross-sectional area of the first connecting bar 11J, and the rigidity of the first connecting bar 11J and the second connecting bar 12J is equal. However, since the number [number / m] of the second connecting bars 12J per unit length is larger than the number [number / m] of the first connecting bars 11J per unit length, the lead frame 1J is longer than the longitudinal direction. Hard to bend in the short direction.
In FIG. 15, the longitudinal dimension LJ of the lead frame 1J is twice the lateral dimension SJ of the lead frame 1J. There are two first connecting bars 11J and seven second connecting bars 12J. In other words, the ratio A2 of the number of the second connecting bars 12J to the longitudinal dimension LJ of the lead frame 1J is 7 / LJ = 7 / (2SJ), and the first connecting bar 11J with respect to the transverse dimension SJ of the lead frame 1J. The number ratio A1 is 2 / SJ. That is, the lead frame 1J is less likely to bend 1.75 times (7/4 times) in the short direction than in the long direction. For this reason, the handleability of the lead frame 1J is high.
　さらなる効果や変形例は、当業者によって容易に導き出すことができる。このため、本発明のより広範な態様は、以上のように表しかつ記述した特定の詳細および代表的な実施形態に限定されるものではない。したがって、添付の特許請求の範囲およびその均等物によって定義される総括的な発明の概念の精神または範囲から逸脱することなく、様々な変更が可能である。  Further effects and modifications can be easily derived by those skilled in the art. Thus, the broader aspects of the present invention are not limited to the specific details and representative embodiments shown and described above. Accordingly, various modifications can be made without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents.
１、１Ａ～１Ｊ リードフレーム 
２ 半導体装置 
１０ 単位リードフレーム 
１０ａ ダイパッド 
１０ｂ リード 
１０ｃ サポートバー 
１１、１１Ｉ、１１Ｊ 第１コネクティングバー 
１２、１２Ａ、１２Ｂ、１２Ｉ、１２Ｊ 第２コネクティングバー 
１３ 外枠 
１４ 交差部 
Ｌ 長手方向 
Ｓ 短手方向  1, 1A-1J Lead frame
2 Semiconductor devices
10 unit lead frame
10a Die pad
10b lead
10c Support bar
11, 11I, 11J 1st connecting bar
12, 12A, 12B, 12I, 12J Second connecting bar
13 Outer frame
14 Intersection
L Longitudinal direction
S Short direction

Claims (11)

  1. 　矩形状のリードフレームであって、 
    　ダイパッドと複数のリードとを有し、マトリックス状に並べられた複数の単位リードフレームと、
    　隣接する前記単位リードフレーム同士を連結し、前記リードフレームの長手方向に延びる複数の第１コネクティングバーと、
    　隣接する前記単位リードフレーム同士を連結し、前記リードフレームの短手方向に延びる複数の第２コネクティングバーと、
    　を備え、
    　複数の前記第２コネクティングバーの少なくとも一部が、前記第１コネクティングバーよりも剛性の高い部位を有することを特徴とするリードフレーム。     A rectangular lead frame,
    A plurality of unit lead frames having a die pad and a plurality of leads and arranged in a matrix;
    A plurality of first connecting bars connecting adjacent unit lead frames and extending in the longitudinal direction of the lead frames;
    A plurality of second connecting bars that connect adjacent unit lead frames and extend in the short direction of the lead frames;
    With
    A lead frame, wherein at least a part of the plurality of second connecting bars has a portion having rigidity higher than that of the first connecting bar.
  2. 　前記リードは、前記第１コネクティングバーにのみ支持されていること 
    を特徴とする請求項１に記載のリードフレーム。      The lead is supported only by the first connecting bar.
    The lead frame according to claim 1.
  3. 　複数の前記第２コネクティングバーの少なくとも一部が、前記第１コネクティングバーよりも厚い部位を有することを特徴とする、請求項１または２に記載のリードフレーム。 3. The lead frame according to claim 1, wherein at least a part of the plurality of second connecting bars has a portion thicker than the first connecting bar. 4.
  4. 　前記第２コネクティングバーにおける前記第１コネクティングバーよりも厚い部位は、前記リードフレームの最も厚い部位と同じ厚さであることを特徴とする請求項３に記載のリードフレーム。  4. The lead frame according to claim 3, wherein a portion thicker than the first connecting bar in the second connecting bar has the same thickness as the thickest portion of the lead frame.
  5. 　前記ダイパッドは、前記第２コネクティングバーにのみ支持されていることを特徴とする請求項４に記載のリードフレーム。  The lead frame according to claim 4, wherein the die pad is supported only by the second connecting bar.
  6. 　前記第２コネクティングバーは、断面が逆台形状であり、最も厚い部分が前記リードフレームの最も厚い部位と同じ厚さであることを特徴とする請求項３～５のいずれか一つに記載のリードフレーム。  6. The second connecting bar according to claim 3, wherein the cross section of the second connecting bar has an inverted trapezoidal shape, and the thickest portion has the same thickness as the thickest portion of the lead frame. Lead frame.
  7. 　前記第１コネクティングバーと前記第２コネクティングバーとが交差する交差部は、前記第２コネクティングバーにおける前記第１コネクティングバーよりも厚い部位と同じ厚さであることを特徴とする請求項３～６のいずれか一つに記載のリードフレーム。  The crossing portion where the first connecting bar and the second connecting bar intersect has the same thickness as a portion of the second connecting bar that is thicker than the first connecting bar. The lead frame according to any one of the above.
  8. 　複数の前記第２コネクティングバーのうち一部の前記第２コネクティングバーは、前記短手方向の一端から他端まですべて前記第１コネクティングバーよりも厚く、
    　残りの前記第２コネクティングバーは、前記短手方向の一端から他端まですべて前記第１コネクティングバーと同じ厚さであることを特徴とする請求項３～７のいずれか一つに記載のリードフレーム。      Among the plurality of second connecting bars, some of the second connecting bars are all thicker than the first connecting bar from one end to the other end in the short direction,
    The lead according to any one of claims 3 to 7, wherein the remaining second connecting bar has the same thickness as the first connecting bar from one end to the other end in the short direction. flame.
  9. 　前記第２コネクティングバーは、前記短手方向の一端から他端までの間に、前記第１コネクティングバーよりも厚い部位と、前記第１コネクティングバーと同じ厚さである部位とが混在し、
    　すべての前記第２コネクティングバーを全体で見た場合に、前記短手方向の一端から他端までのすべての箇所に、前記第１コネクティングバーよりも厚い部位が配置されていることを特徴とする請求項３～８のいずれか一つに記載のリードフレーム。      The second connecting bar includes a portion thicker than the first connecting bar and a portion having the same thickness as the first connecting bar between one end and the other end in the short direction,
    When all of the second connecting bars are viewed as a whole, thicker portions than the first connecting bars are disposed at all locations from one end to the other end in the lateral direction. The lead frame according to any one of claims 3 to 8.
  10. 　複数の前記第２コネクティングバーの少なくとも一部が、前記第１コネクティングバーよりも幅広の部位を有することを特徴とする、請求項１または２に記載のリードフレーム。  3. The lead frame according to claim 1, wherein at least a part of the plurality of second connecting bars has a portion wider than the first connecting bar. 4.
  11. 　矩形状のリードフレームであって、 
    　ダイパッドと複数のリードとを有し、マトリックス状に並べられた複数の単位リードフレームと、
    　隣接する前記単位リードフレーム同士を連結し、前記リードフレームの長手方向に延びる複数の第１コネクティングバーと、
    　隣接する前記単位リードフレーム同士を連結し、前記リードフレームの短手方向に延びる複数の第２コネクティングバーと、
    　を備え、
    　前記第２コネクティングバーの厚みおよび幅が前記第１コネクティングバーの厚みおよび幅とそれぞれ等しく、
    　前記リードフレームの長手方向寸法に対する前記第２コネクティングバーの個数の比が、前記リードフレームの短手方向寸法に対する前記第１コネクティングバーの個数の比よりも大きいことを特徴とする、リードフレーム。      A rectangular lead frame,
    A plurality of unit lead frames having a die pad and a plurality of leads and arranged in a matrix;
    A plurality of first connecting bars connecting adjacent unit lead frames and extending in the longitudinal direction of the lead frames;
    A plurality of second connecting bars that connect adjacent unit lead frames and extend in the short direction of the lead frames;
    With
    The thickness and width of the second connecting bar are equal to the thickness and width of the first connecting bar, respectively.
    The lead frame according to claim 1, wherein the ratio of the number of the second connecting bars to the longitudinal dimension of the lead frame is larger than the ratio of the number of the first connecting bars to the lateral dimension of the lead frame.
PCT/JP2017/017960 2016-06-24 2017-05-11 Lead frame WO2017221581A1 (en)

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