WO2017219443A1 - 阵列基板、液晶显示面板显示装置 - Google Patents

阵列基板、液晶显示面板显示装置 Download PDF

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WO2017219443A1
WO2017219443A1 PCT/CN2016/092323 CN2016092323W WO2017219443A1 WO 2017219443 A1 WO2017219443 A1 WO 2017219443A1 CN 2016092323 W CN2016092323 W CN 2016092323W WO 2017219443 A1 WO2017219443 A1 WO 2017219443A1
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tft switch
gate
array substrate
pixel
liquid crystal
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PCT/CN2016/092323
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English (en)
French (fr)
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武岳
雍玮娜
彭邦银
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深圳市华星光电技术有限公司
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Priority to US15/125,194 priority Critical patent/US20180217459A1/en
Publication of WO2017219443A1 publication Critical patent/WO2017219443A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133707—Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/40—Arrangements for improving the aperture ratio

Definitions

  • the present invention relates to the field of liquid crystal display panels, and in particular, to an array substrate and a liquid crystal display panel.
  • a Thin Film Transistor (TFT) array substrate is an important component of a liquid crystal display, which can achieve high speed, high brightness, high contrast display effect, and has become the mainstream of many flat panel display technologies.
  • the array substrate mainly includes a gate line, a data line, a pixel electrode, a thin film transistor, and the like.
  • the via hole connecting the pixel electrode is located outside the pixel electrode in the pixel region, it is necessary to occupy a certain area of the pixel region and reduce the light transmission area in the region.
  • These indispensable components reduce the aperture ratio of each pixel unit. And as the pixel is higher, the influence on the pixel aperture ratio is greater.
  • An object of the present invention is to provide an array substrate and a liquid crystal display panel which have an increased aperture ratio.
  • the present invention provides an array substrate, the array substrate includes a plurality of gate lines arranged in parallel, and a plurality of parallel spaced data lines, wherein the plurality of gate lines and the plurality of data lines are vertically arranged to form a number Pixel regions; the plurality of gate lines and the plurality of data lines are insulated and orthogonal
  • a TFT switch and a pixel electrode are disposed in each of the pixel regions, and the TFT switch is connected to a gate line and a data line of a pixel region where the TFT switch is located, wherein the pixel electrode is provided with a via hole, and the via hole is
  • the TFT switches are disposed adjacent to each other, and the pixel electrode is electrically connected to the TFT through the via hole provided therein connection.
  • the pixel electrode is provided with an extended area, and the TFT switch is located at one side of the extended area, and the through hole is formed in a layer of the extended area that penetrates the data line of the array substrate.
  • the TFT switch includes a source and a drain, the via is electrically connected to the source, and the drain is connected to the data line.
  • the plurality of gate lines are arranged along the first direction and extend along the second direction; the plurality of data lines are arranged along the second direction and extend along the first direction; Two data lines and two gate lines intersect to form the sub-pixel area.
  • the TFT switch includes a gate electrically connected to the gate line.
  • the liquid crystal display panel of the present application comprises an array substrate, a liquid crystal layer and a color filter substrate.
  • the array substrate comprises a plurality of gate lines arranged in parallel, a plurality of parallel spaced data lines, and the plurality of gate lines and The plurality of data lines are vertically arranged to form a plurality of pixel regions; the plurality of gate lines are insulated from the plurality of data lines, and each of the pixel regions is provided with a TFT switch and a pixel electrode, and the TFT switch Connected to the gate line and the data line of the pixel region in which it is located, a via hole is disposed in the pixel electrode, and the via hole is disposed adjacent to the TFT switch, and the pixel electrode passes through the photo device disposed therein The hole is electrically connected to the TFT switch, and the liquid crystal layer is located between the array substrate and the color filter substrate.
  • the pixel electrode is provided with an extended area, the TFT switch is located at one side of the extended area, and the through hole is opened in the extended area.
  • the TFT switch includes a gate, a source and a drain, the via is electrically connected to the source, and the gate is electrically connected to the gate line.
  • the plurality of gate lines are arranged along the first direction and extend along the second direction; the plurality of data lines are arranged along the second direction and extend along the first direction; Two data lines and two gate lines intersect to form the sub-pixel area.
  • the present application provides a display device, which includes the liquid crystal display panel and a backlight module, and the liquid crystal display panel is disposed on the backlight module to provide a light source through a backlight module.
  • the array substrate of the present invention opens a via hole connecting the TFT switch and the pixel electrode in the pixel electrode region, avoids occupying other regions of the pixel region, increases the light shielding area, avoids reducing the aperture ratio of the pixel region, and improves the pixel.
  • the transmittance of the area is not limited to a via hole connecting the TFT switch and the pixel electrode in the pixel electrode region, avoids occupying other regions of the pixel region, increases the light shielding area, avoids reducing the aperture ratio of the pixel region, and improves the pixel.
  • FIG. 1 is a plan perspective view of a partial region of an array substrate provided by the present invention.
  • a preferred embodiment of the present invention provides an array substrate and a liquid crystal display panel.
  • the liquid crystal display panel includes an array substrate 11 , a color filter substrate, and a liquid crystal sandwiched between the array substrate 11 and the color filter substrate.
  • the array substrate 10 includes a plurality of parallel spaced gate lines 11 and a plurality of parallel spaced apart data lines 12.
  • the plurality of gate lines 11 and the plurality of data lines 12 are vertically arranged orthogonally to form a plurality of pixel regions. 13; the plurality of gate lines 11 and the plurality of data lines 12 are insulated and orthogonal.
  • the plurality of pixel regions 13 are arranged in a matrix.
  • a TFT switch 14 and a pixel electrode 15 are disposed in each of the pixel regions 13.
  • the TFT switch 14 is connected to the gate line 11 and the data line 12 of the pixel region 13 in which it is located.
  • a via hole 16 is provided in the pixel electrode 15. The via hole 16 is disposed adjacent to the TFT switch 14, and the pixel electrode 15 is electrically connected to the TFT switch 14 through the via hole 16 provided therein.
  • the plurality of gate lines 11 are arranged along the first direction and extend along the second direction; the first direction is a longitudinal direction, and the second direction is a horizontal direction.
  • the plurality of data lines 12 are spaced apart along the second direction and extend along the first direction; each of the two data lines 12 and the two gate lines 11 intersect to form the pixel area 13.
  • the first direction is a horizontally perpendicular direction.
  • the pixel electrode 15 is provided with an extended region 151
  • the TFT switch 14 is located at the side of the extended region 151
  • the via hole 16 is defined in the extended region 151.
  • a gap area is formed between the extended area 131 and the data line, and the TFT is disposed in the vacant area.
  • the via hole 16 is formed in the extending region 151 and penetrates the insulating layer for connecting the pixel electrode 15 and the source and drain electrodes.
  • the TFT switch 14 includes a source 141 and a drain 142.
  • the via 16 is electrically connected to the drain 142, and the source 141 is connected to the data line 12.
  • the TFT switch 14 includes a gate (not shown), and the gate is electrically connected to the gate line 11.
  • the via 16 connecting the TFT switch 14 and the pixel electrode 15 is opened in the area of the pixel electrode 15, avoiding occupying the area of other parts of the pixel area 13 and increasing the light-shielding area, thereby avoiding affecting the pixel area.
  • the aperture ratio increases the light transmittance of the pixel area.
  • the present invention provides a display device, which includes the liquid crystal display panel and a backlight module, and the liquid crystal display panel is disposed on the backlight module to provide a light source through a backlight module.

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  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
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Abstract

一种阵列基板及液晶显示面板，所述阵列基板包括数个平行间隔设置的栅极线（11）、数个平行间隔设置的数据线（12），数个栅极线（11）与数个数据线（12）垂直正交设置形成数个像素区域（13）；数个栅极线（11）与数个数据线（12）为绝缘正交，每个所述像素区域（13）内设有TFT开关（14）、像素电极（15），所述TFT开关（14）与其所在的像素区域（13）的栅极线（11）及数据线（12）连接，所述像素电极（15）内设有过孔（16），所述过孔（16）与所述TFT开关（14）相邻设置，所述像素电极（15）通过设于其内的所述过孔（16）与TFT开关（14）电连接。

Description

阵列基板、液晶显示面板显示装置
本发明要求2016年6月24日递交的发明名称为“阵列基板及液晶显示面板”的申请号201610466448.1的在先申请优先权，上述在先申请的内容以引入的方式并入本文本中。
技术领域
本发明涉及液晶显示面板技术领域，特别涉及一种阵列基板及液晶显示面板。
背景技术
随着电子技术的不断发展，液晶显示器已广泛的应用于各个显示领域。薄膜晶体管(Thin Film Transistor，TFT)阵列基板是液晶显示器的重要组成部分，其可以达到高速度、高亮度、高对比度的显示效果，目前已经成为众多平板显示技术的主流。其中，阵列基板主要包括栅线、数据线、像素电极和薄膜晶体管等。随着人们对显示效果要求的提高，对像素要求越来越高，显示器单位面积上的像素单元越来越多，每一个像素单元也就越来越小。由于连接像素电极的过孔位于像素区域内像素电极外侧，需要占用一定的像素区域的面积，减小该区域内透光面积，这些必不可少的组件会降低着每一个像素单元的开口率，并且随着像素越高，对像素开口率的影响越大。
发明内容
本发明的目的在于提供一种提高开口率的阵列基板及液晶显示面板。
本申请提供一种阵列基板，所述阵列基板包括数个平行间隔设置的栅极线、数个平行间隔设置的数据线，所述数个栅极线与数个数据线垂直正交设置形成数个像素区域；所述数个栅极线与数个数据线为绝缘正交，
所述每个像素区域内设有TFT开关、像素电极，所述TFT开关与其所在的像素区域的栅极线及数据线连接，所述像素电极内设有过孔，所述过孔与所述TFT开关相邻设置，所述像素电极通过设于其内的所述过孔与TFT开关电 连接。
其中，所述像素电极设有延伸区域，所述TFT开关位于所述延伸区域一侧，所述过孔开设于所述延伸区域内贯穿阵列基板的数据线所在层。
其中，所述TFT开关包括源极及漏极，所述过孔与所述源极电连接，所述漏极连接所述数据线。
其中，所述数个栅极线沿着第一方向间隔排布，并沿着第二方向延伸；所述数个数据线沿着第二方向间隔排布，并沿着第一方向延伸；每两个数据线与两个栅极线交叉围成所述子像素区域。
其中，所述TFT开关包括栅极，所述栅极电连接所述栅极线。
本申请的液晶显示面板，包括阵列基板、液晶层和彩膜基板，所述阵列基板包括数个平行间隔设置的栅极线、数个平行间隔设置的数据线，所述数个栅极线与数个数据线垂直正交设置形成数个像素区域；所述数个栅极线与数个数据线为绝缘正交，所述每个像素区域内设有TFT开关、像素电极，所述TFT开关与其所在的像素区域的栅极线及数据线连接，所述像素电极内设有过孔，所述过孔与所述TFT开关相邻设置，所述像素电极通过设于其内的所述过孔与TFT开关电连接，所述液晶层位于所述阵列基板和彩膜基板之间。
其中，所述像素电极设有延伸区域，所述TFT开关位于所述延伸区域一侧，所述过孔开设于所述延伸区域内。
其中，所述TFT开关包括栅极、源极及漏极，所述过孔与所述源极电连接，所述栅极电连接所述栅极线。
其中，所述数个栅极线沿着第一方向间隔排布，并沿着第二方向延伸；所述数个数据线沿着第二方向间隔排布，并沿着第一方向延伸；每两个数据线与两个栅极线交叉围成所述子像素区域。
本申请提供一种显示装置，所述显示装置包括所述的液晶显示面板及背光模组，所述液晶显示面板设于所述背光模组上通过背光模组提供光源。
本发明所述的阵列基板将连接TFT开关与所述像素电极的过孔开设于像素电极区域内，避免占用像素区域其它部位的区域而增加遮光面积，避免减小像素区域的开口率，提升像素区域的透光率。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明提供的阵列基板的部分区域的平面透视图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请参阅图1，本发明佳实施方式提供一种阵列基板及液晶显示面板，液晶显示面板包括阵列基板11、彩膜基板及夹持于所述阵列基板11与所述彩膜基板之间的液晶层。所述阵列基板10包括数个平行间隔设置的栅极线11、数个平行间隔设置的数据线12，所述数个栅极线11与数个数据线12垂直正交设置形成数个像素区域13；所述数个栅极线11与数个数据线12为绝缘正交。所述数个像素区域13呈矩阵排列。
所述每个像素区域13内设有TFT开关14、像素电极15。所述TFT开关14与其所在的像素区域13的栅极线11及数据线12连接。所述像素电极15内设有过孔16。所述过孔16与所述TFT开关14相邻设置，所述像素电极15通过设于其内的所述过孔16与TFT开关14电连接。
本实施例中，所述数个栅极线11沿着第一方向间隔排布，并沿着第二方向延伸；所述第一方向为纵向，所述第二方向为横向。所述数个数据线12沿着第二方向间隔排布，并沿着第一方向延伸；每两个数据线12与两个栅极线11交叉围成所述像素区域13。所述第一方向水平垂直垂直的方向。
本实施例中，所述像素电极15设有延伸区域151，所述TFT开关14位于所述延伸区域151一侧，所述过孔16开设于所述延伸区域151内。具体的，所述延伸区域131与所述数据线之间形成空位区，所述TFT设于空位区内， 所述过孔16开设于所述延伸区域151内贯穿所述绝缘层，用以连接像素电极15与源漏极。
进一步的，所述TFT开关14包括源极141及漏极142，所述过孔16与所述漏极142电连接，所述源极141连接所述数据线12。
进一步的，所述TFT开关14包括栅极(图未示)，所述栅极电连接所述栅极线11。
本发明所述的阵列基板中，连接TFT开关14与所述像素电极15的过孔16开设于像素电极15区域内，避免占用像素区域13其它部位的区域而增加遮光面积，避免影响像素区域的开口率，提升像素区域的透光率。
本发明提供一种显示装置，所述显示装置包括所述的液晶显示面板及背光模组，所述液晶显示面板设于所述背光模组上通过背光模组提供光源。
以上所揭露的仅为本发明较佳实施例而已，当然不能以此来限定本发明之权利范围，本领域普通技术人员可以理解实现上述实施例的全部或部分流程，并依本发明权利要求所作的等同变化，仍属于发明所涵盖的范围。

Claims (13)

  1. 一种阵列基板，其中，所述阵列基板包括数个平行间隔设置的栅极线、数个平行间隔设置的数据线，所述数个栅极线与数个数据线垂直正交设置形成数个像素区域；所述数个栅极线与数个数据线为绝缘正交，
    所述每个像素区域内设有TFT开关、像素电极，所述TFT开关与其所在的像素区域的栅极线及数据线连接，所述像素电极内设有过孔，所述过孔与所述TFT开关相邻设置，所述像素电极通过设于其内的所述过孔与TFT开关电连接。
  2. 如权利要求1所述的阵列基板，其中，所述像素电极设有延伸区域，所述TFT开关位于所述延伸区域一侧，所述过孔开设于所述延伸区域内贯穿阵列基板的数据线所在层。
  3. 如权利要求1所述的阵列基板，其中，所述TFT开关包括源极及漏极，所述过孔与所述漏极电连接，所述源极连接所述数据线。
  4. 如权利要求1所述的阵列基板，其中，所述数个栅极线沿着第一方向间隔排布，并沿着第二方向延伸；所述数个数据线沿着第二方向间隔排布，并沿着第一方向延伸；每两个数据线与两个栅极线交叉围成所述子像素区域。
  5. 如权利要求1所述的阵列基板，其中，所述TFT开关包括栅极，所述栅极电连接所述栅极线。
  6. 一种液晶显示面板，包括阵列基板、液晶层和彩膜基板，其中，所述阵列基板包括数个平行间隔设置的栅极线、数个平行间隔设置的数据线，所述数个栅极线与数个数据线垂直正交设置形成数个像素区域；所述数个栅极线与数个数据线为绝缘正交，所述每个像素区域内设有TFT开关、像素电极，所述TFT开关与其所在的像素区域的栅极线及数据线连接，所述像素电极内设有过孔，所述过孔与所述TFT开关相邻设置，所述像素电极通过设于其内的所述过孔与TFT开关电连接，所述液晶层位于所述阵列基板和彩膜基板之间。
  7. 如权利要求6所述的液晶显示面板，其中，所述像素电极设有延伸区域，所述TFT开关位于所述延伸区域一侧，所述过孔开设于所述延伸区域内。
  8. 如权利要求6所述的液晶显示面板，其中，所述TFT开关包括栅极、 源极及漏极，所述过孔与所述源极电连接，所述栅极电连接所述栅极线。
  9. 如权利要求6所述的液晶显示面板，其中，所述数个栅极线沿着第一方向间隔排布，并沿着第二方向延伸；所述数个数据线沿着第二方向间隔排布，并沿着第一方向延伸；每两个数据线与两个栅极线交叉围成所述子像素区域。
  10. 一种显示装置，其中，所述显示装置包括液晶显示面板及背光模组，所述液晶显示面板设于所述背光模组上通过背光模组提供光源，其中液晶显示面板，包括阵列基板、液晶层和彩膜基板，所述阵列基板包括数个平行间隔设置的栅极线、数个平行间隔设置的数据线，所述数个栅极线与数个数据线垂直正交设置形成数个像素区域；所述数个栅极线与数个数据线为绝缘正交，所述每个像素区域内设有TFT开关、像素电极，所述TFT开关与其所在的像素区域的栅极线及数据线连接，所述像素电极内设有过孔，所述过孔与所述TFT开关相邻设置，所述像素电极通过设于其内的所述过孔与TFT开关电连接，所述液晶层位于所述阵列基板和彩膜基板之间。
  11. 如权利要求10所述的显示装置，其中，所述像素电极设有延伸区域，所述TFT开关位于所述延伸区域一侧，所述过孔开设于所述延伸区域内。
  12. 如权利要求10所述的显示装置，其中，所述TFT开关包括栅极、源极及漏极，所述过孔与所述源极电连接，所述栅极电连接所述栅极线。
  13. 如权利要求10所述的显示装置，其中，所述数个栅极线沿着第一方向间隔排布，并沿着第二方向延伸；所述数个数据线沿着第二方向间隔排布，并沿着第一方向延伸；每两个数据线与两个栅极线交叉围成所述子像素区域。
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070058099A1 (en) * 2005-09-09 2007-03-15 Seiko Epson Corporation Electrooptic device, substrate therefor, method for making the electrooptic device, and electronic apparatus
CN101556417A (zh) * 2008-04-11 2009-10-14 北京京东方光电科技有限公司 Ffs型tft-lcd阵列基板结构及其制造方法
CN101807585A (zh) * 2009-02-18 2010-08-18 北京京东方光电科技有限公司 Tft-lcd阵列基板及其制造方法
CN102403320A (zh) * 2010-09-16 2012-04-04 上海天马微电子有限公司 阵列基板及其制作方法、液晶显示面板
CN102629046A (zh) * 2011-06-29 2012-08-08 北京京东方光电科技有限公司 阵列基板及其制造方法、液晶显示器件

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070058099A1 (en) * 2005-09-09 2007-03-15 Seiko Epson Corporation Electrooptic device, substrate therefor, method for making the electrooptic device, and electronic apparatus
CN101556417A (zh) * 2008-04-11 2009-10-14 北京京东方光电科技有限公司 Ffs型tft-lcd阵列基板结构及其制造方法
CN101807585A (zh) * 2009-02-18 2010-08-18 北京京东方光电科技有限公司 Tft-lcd阵列基板及其制造方法
CN102403320A (zh) * 2010-09-16 2012-04-04 上海天马微电子有限公司 阵列基板及其制作方法、液晶显示面板
CN102629046A (zh) * 2011-06-29 2012-08-08 北京京东方光电科技有限公司 阵列基板及其制造方法、液晶显示器件

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