WO2017215067A1 - 微发光二极管显示面板及其制作方法 - Google Patents

微发光二极管显示面板及其制作方法 Download PDF

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Publication number
WO2017215067A1
WO2017215067A1 PCT/CN2016/090108 CN2016090108W WO2017215067A1 WO 2017215067 A1 WO2017215067 A1 WO 2017215067A1 CN 2016090108 W CN2016090108 W CN 2016090108W WO 2017215067 A1 WO2017215067 A1 WO 2017215067A1
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Prior art keywords
light emitting
emitting diode
micro
micro light
substrate
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French (fr)
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陈黎暄
李泳锐
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US15/115,915 priority Critical patent/US10475970B2/en
Publication of WO2017215067A1 publication Critical patent/WO2017215067A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a micro light emitting diode display panel and a method of fabricating the same.
  • Flat display devices are widely used in various consumer electronics such as mobile phones, televisions, personal digital assistants, digital cameras, notebook computers, desktop computers, etc. due to their high image quality, power saving, thin body and wide application range. Products have become the mainstream in display devices.
  • a micro LED display is a display that realizes image display by using a high-density and small-sized LED array integrated on one substrate as a display pixel. As with a large-sized outdoor LED display, each pixel can be addressed. It can be seen as a miniature version of the outdoor LED display, which reduces the pixel distance from millimeter to micrometer.
  • the Micro LED display is the same as the Organic Light-Emitting Diode (OLED) display. Light-emitting display, but Micro LED display has the advantages of better material stability, longer life, no image imprinting than OLED display, and is considered to be the biggest competitor of OLED display.
  • the micro-light-emitting diode device must first be grown on a sapphire-based substrate by molecular beam epitaxy to form a display panel, and the micro-light-emitting diode device must be transferred from the sapphire substrate to the substrate.
  • Micro Transfer Printing is a technique for transferring a micro-light emitting diode device grown on a sapphire-based substrate onto a receiving substrate, specifically, first by laser stripping technology ( Laser lift-off, LLO) separates the micro-emitting diode bare chip from the sapphire-based substrate, and then uses a patterned polydimethylsiloxane (PDMS) transfer head to expose the micro-light emitting diode
  • LLO Laser lift-off
  • LLO Laser lift-off
  • PDMS polydimethylsiloxane
  • the chip is adsorbed from the sapphire substrate, and the PDMS transfer head is aligned with the receiving substrate, and then the micro light emitting diode bare chip adsorbed by the PDMS transfer head is attached to a predetermined position on the receiving substrate, and then the PDMS transfer head is peeled off.
  • the transfer of the micro-light emitting diode bare chip can be completed to form a micro light-emitting dio
  • micro-light-emitting diode display using only the micro-light-emitting diode as the basic display unit has a narrow color gamut and a poor display effect, in order to optimize the display of the micro-light-emitting diode display
  • the effect is to broaden its color gamut.
  • An object of the present invention is to provide a micro light emitting diode display panel capable of expanding the color gamut of a micro light emitting diode display panel and improving the image quality of the micro light emitting diode display panel.
  • Another object of the present invention is to provide a method for fabricating a micro light emitting diode display panel, which can enlarge the color gamut of the micro light emitting diode display panel and improve the image quality of the micro light emitting diode display panel.
  • the present invention provides a micro light emitting diode display panel comprising: a substrate, a plurality of micro light emitting diodes arranged in an array on the substrate, and a transparent package covering the plurality of micro light emitting diodes. a layer, and a quantum dot layer disposed on the encapsulation layer.
  • the substrate is a flexible substrate or a rigid substrate.
  • the material of the encapsulation layer is: parylene or an organic resin.
  • the plurality of micro light emitting diodes include: a red micro light emitting diode, a green micro light emitting diode, and a blue micro light emitting diode.
  • the quantum dot layer includes: a red quantum dot region disposed above each red micro light emitting diode, a green quantum dot region disposed above each green micro light emitting diode, and a blue quantum dot disposed above each blue micro light emitting diode Area.
  • the invention also provides a method for manufacturing a micro light emitting diode display panel, comprising the following steps:
  • Step 1 providing a substrate, forming a plurality of micro light-emitting diodes arranged in an array on the substrate;
  • Step 2 covering the plurality of micro light emitting diodes with a transparent encapsulation layer, and packaging the plurality of micro light emitting diodes;
  • Step 3 Form a quantum dot layer on the encapsulation layer.
  • the step 1 includes: firstly providing a primary substrate, generating a plurality of micro light emitting diodes on the primary substrate, and transferring the plurality of micro light emitting diodes onto the substrate by a micro transfer method;
  • the native substrate is a sapphire substrate
  • the substrate is a flexible substrate or a rigid substrate.
  • the material of the encapsulation layer is: parylene or an organic resin.
  • the plurality of micro light emitting diodes include: a red micro light emitting diode, a green micro light emitting diode, and a blue micro light emitting diode.
  • the quantum dot layer includes: a red quantum dot region disposed above each red micro light emitting diode, a green quantum dot region disposed above each green micro light emitting diode, and a blue quantum dot disposed above each blue micro light emitting diode Area.
  • the present invention also provides a micro light emitting diode display panel, comprising: a substrate, a plurality of micro light emitting diodes arranged in an array on the substrate, a transparent encapsulation layer covering the plurality of micro light emitting diodes, and a quantum dot layer on the encapsulation layer;
  • the substrate is a flexible substrate or a rigid substrate
  • the material of the encapsulation layer is: parylene or an organic resin.
  • the present invention provides a micro light emitting diode display panel including: a substrate, a plurality of micro light emitting diodes arranged in an array on the substrate, and a transparent cover of the plurality of micro light emitting diodes
  • the encapsulation layer and the quantum dot layer disposed on the encapsulation layer, the quantum dot layer is added on the encapsulation layer, and the short-wavelength light emitted by the micro-light-emitting diode is used to excite the quantum dot layer to emit light, thereby making the micro-light-emitting diode and the quantum dot
  • the layers together constitute a basic display unit of the micro-light-emitting diode display panel, which can enlarge the color gamut of the micro-light-emitting diode display panel and improve the display quality of the micro-light-emitting diode display panel.
  • the invention also provides a manufacturing method of the micro light emitting diode display panel, which can enlarge the color gamut
  • FIG. 1 is a schematic structural view of a first embodiment of a micro light emitting diode display panel of the present invention
  • FIG. 2 is a schematic structural view of a second embodiment of a micro light emitting diode display panel of the present invention.
  • FIG. 3 is a flow chart of a method of fabricating a micro light emitting diode display panel of the present invention.
  • the present invention firstly provides a micro light emitting diode display panel, comprising: a substrate 1, a plurality of micro light emitting diodes 2 arranged in an array on the substrate 1, and covering the plurality of micro A transparent encapsulation layer 3 of the light emitting diode 2 and a quantum dot layer 4 provided on the encapsulation layer 3.
  • the substrate 1 is a flexible substrate or a rigid substrate, and the plurality of micro light-emitting diodes 2 are transferred onto the substrate 1 by a micro-transfer method on a sapphire-based primary substrate, and the substrate 1 is transferred.
  • a circuit pattern is pre-formed to drive the plurality of micro-light-emitting diodes 2 to emit light
  • the micro light emitting diode 2 may select a gallium nitride (GaN) based light emitting diode, and the substrate 1 is a silicon substrate.
  • GaN gallium nitride
  • the encapsulation layer 3 functions to protect the micro-light-emitting diode 2 from moisture intrusion, and needs to have good heat resistance, insulation and film formation stability, and optional materials include, but are not limited to, various types of poly-pairs Toluene, or organic resin.
  • the encapsulation layer 3 can be formed by a spin coating process with a thickness between 50 nm and 0.5 mm.
  • FIG. 1 illustrates an a spin coating process with a thickness between 50 nm and 0.5 mm.
  • the thickness of the encapsulation layer 3 at the interval of each micro light emitting diode 2 is greater than the thickness on the micro light emitting diode 2, so that the encapsulation layer 3 is
  • the surface is a flat surface, and the upper surface of the quantum dot layer 4 is also a flat surface. As shown in FIG.
  • the thickness of the encapsulation layer 3 at the interval of each micro light-emitting diode 2 is equal to the thickness on the micro-light-emitting diode 2, so that the encapsulation layer 3 is in each micro Grooves are formed at the intervals of the light-emitting diodes 2, and the quantum dot layer 4 is formed along the encapsulation layer 3, which also forms grooves at the intervals of the respective micro-light-emitting diodes 2.
  • the plurality of micro light emitting diodes 2 comprise: a red micro light emitting diode, a green micro light emitting diode, and a blue micro light emitting diode.
  • the quantum dot layer 4 includes: a red quantum dot region disposed above each red micro light emitting diode, a green quantum dot region disposed above each green micro light emitting diode, and a blue quantum disposed above each blue micro light emitting diode Point area. That is, the luminescent color of each region in the quantum dot layer 4 is formed corresponding to the luminescent color of the micro luminescent diode 2 underneath.
  • the short-wavelength light emitted by the micro-light-emitting diode 2 is used to excite the quantum dot layer 4 to emit light, so that the micro-light-emitting diode 2 and the quantum dot layer 4 together form a micro-luminescence.
  • the basic display unit of the diode display panel can enlarge the color gamut of the micro light emitting diode display panel and improve the display quality of the micro light emitting diode display panel compared to the prior art using only the micro light emitting diode as the basic display unit.
  • the structure of the quantum dot material used in the quantum dot layer 4 includes a luminescent core (for example, the green quantum dot material may include indium phosphide (InP), and cadmium sulfide sulfide (Cd 2 SSe), etc., red quantum dots.
  • Materials may include cadmium selenide (CdSe), and indium arsenide (InAs), inorganic protective shells (materials such as cadmium sulfide (CdS), zinc selenide (ZnSe), zinc sulfide (ZnS), and zinc oxide.
  • materials such as (ZnO)
  • surface ligands materials may be selected from R-COOH, R-NH2, or R-SH, wherein R is a linear alkane of 12 to 20 carbon atoms or Olefin molecule).
  • the present invention further provides a method for fabricating a micro light emitting diode display panel, comprising the following steps:
  • Step 1 Providing a substrate 1 on which a plurality of micro-light emitting arrays arranged in an array are formed Tube 2.
  • the step 1 includes: firstly providing a primary substrate, generating a plurality of micro light emitting diodes 2 on the primary substrate, and transferring the plurality of micro light emitting diodes 2 to the substrate by a micro transfer method;
  • the primary substrate is a sapphire substrate;
  • the substrate 1 is a flexible substrate or a rigid substrate.
  • the substrate 1 is pre-formed with a circuit pattern to drive the plurality of micro-light-emitting diodes 2 to emit light, and the micro-light-emitting diode 2 may select a gallium nitride-based light-emitting diode, and the substrate 1 is a silicon substrate.
  • Step 2 covering the plurality of micro light-emitting diodes 2 with a transparent encapsulation layer 3, and packaging the plurality of micro-light-emitting diodes 2.
  • the encapsulation layer 3 functions to protect the micro-light-emitting diode 2 from moisture intrusion and needs to have good heat resistance, insulation and film formation stability, and optional materials include, but are not limited to, various types of poly pairs. Xylene, or an organic resin.
  • the encapsulation layer 3 can be formed by a spin coating process with a thickness between 50 nm and 0.5 mm.
  • Step 3 Forming a quantum dot layer 4 on the encapsulation layer 3.
  • the thickness of the encapsulation layer 3 at the interval of each micro light emitting diode 2 is greater than the thickness on the micro light emitting diode 2, so that the encapsulation layer 3 is The surface is a flat surface, and the upper surface of the quantum dot layer 4 is also a flat surface. As shown in FIG. 1 , in the first embodiment of the present invention, the thickness of the encapsulation layer 3 at the interval of each micro light emitting diode 2 is greater than the thickness on the micro light emitting diode 2, so that the encapsulation layer 3 is The surface is a flat surface, and the upper surface of the quantum dot layer 4 is also a flat surface. As shown in FIG.
  • the thickness of the encapsulation layer 3 at the interval of each micro light-emitting diode 2 is equal to the thickness on the micro-light-emitting diode 2, so that the encapsulation layer 3 is in each micro Grooves are formed at the intervals of the light-emitting diodes 2, and the quantum dot layer 4 is formed along the encapsulation layer 3, which also forms grooves at the intervals of the respective micro-light-emitting diodes 2.
  • the plurality of micro light emitting diodes 2 comprise: a red micro light emitting diode, a green micro light emitting diode, and a blue micro light emitting diode.
  • the quantum dot layer 4 includes: a red quantum dot region disposed above each red micro light emitting diode, a green quantum dot region disposed above each green micro light emitting diode, and a blue quantum disposed above each blue micro light emitting diode Point area. That is, the luminescent color of each region in the quantum dot layer 4 is formed corresponding to the luminescent color of the micro luminescent diode 2 underneath.
  • the short-wavelength light emitted by the micro-light-emitting diode 2 is used to excite the quantum dot layer 4 to emit light, so that the micro-light-emitting diode 2 and the quantum dot layer 4 together form a micro-luminescence.
  • the basic display unit of the diode display panel can enlarge the color gamut of the micro light emitting diode display panel and improve the display quality of the micro light emitting diode display panel compared to the prior art using only the micro light emitting diode as the basic display unit.
  • the present invention provides a micro light emitting diode display panel, including: a substrate, a plurality of micro light emitting diodes arranged in an array disposed on the substrate, and covering the plurality of micro light emitting diodes a transparent encapsulation layer of the pole tube and a quantum dot layer disposed on the encapsulation layer, the quantum dot layer is added on the encapsulation layer, and the short-wavelength light emitted by the micro-light-emitting diode is used to excite the quantum dot layer to emit light, thereby making the micro-luminescence
  • the diode and the quantum dot layer together form a basic display unit of the micro-light-emitting diode display panel, which can enlarge the color gamut of the micro-light-emitting diode display panel and improve the display quality of the micro-light-emitting diode display panel.
  • the invention also provides a manufacturing method of the micro light emitting diode display panel, which can enlarge the color ga

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Abstract

一种微发光二极管显示面板及其制作方法，该微发光二极管显示面板包括：基板(1)、设于所述基板(1)上的阵列排布的多个微发光二极管(2)、覆盖所述多个微发光二极管(2)的透明的封装层(3)、以及设于所述封装层(3)上的量子点层(4)，通过在封装层(3)上增设量子点层(4)，利用微发光二极管(2)的发出的短波长光激发量子点层(4)发光，从而使微发光二极管(2)和量子点层(4)共同组成微发光二极管显示面板的基本显示单元，能够扩大微发光二极管显示面板的色域，提升微发光二极管显示面板的显示品质。

Description

微发光二极管显示面板及其制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种微发光二极管显示面板及其制作方法。
背景技术
平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。
微发光二极管(Micro LED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，Micro LED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但Micro LED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。
由于晶格匹配的原因，微发光二极管器件必须先在蓝宝石类的基板上通过分子束外延的方法生长出来，而做成显示面板，还必须要把微发光二极管器件从蓝宝石类的基板上转移到用于形成显示面板的接收基板上，微转印(Micro Transfer Printing)就是一种将生长在蓝宝石类基板上的微发光二极管器件转移到接收基板上的技术，具体为，首先通过激光剥离技术(Laser lift-off，LLO)将微发光二极管裸芯片(bare chip)从蓝宝石类基板上分离开，随后使用一个图案化的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)传送头将微发光二极管裸芯片从蓝宝石类基板吸附起来，并将PDMS传送头与接收基板进行对位，随后将PDMS传送头所吸附的微发光二极管裸芯片贴附到接收基板上预设的位置，再剥离PDMS传送头，即可完成微发光二极管裸芯片的转移，形成微发光二极管阵列基板，进一步地，所述接收基板是已经预先制备完成电路图案的硅基板，其可以为柔性也可以为刚性。
由于仅仅利用微发光二极管作为基本显示单元的微发光二极管显示器的色域很窄，显示效果较差，因此，为了优化微发光二极管显示器的显示 效果，需要对其色域进行拓宽。
发明内容
本发明的目的在于提供一种微发光二极管显示面板，能够扩大微发光二极管显示面板的色域，提升微发光二极管显示面板的画质。
本发明的目的还在于提供一种微发光二极管显示面板的制作方法，能够扩大微发光二极管显示面板的色域，提升微发光二极管显示面板的画质。
为实现上述目的，本发明提供了一种微发光二极管显示面板，包括：基板、设于所述基板上的阵列排布的多个微发光二极管、覆盖所述多个微发光二极管的透明的封装层、以及设于所述封装层上的量子点层。
所述基板为柔性基板、或刚性基板。
所述封装层的材料为：聚对二甲苯、或有机树脂。
所述多个微发光二极管包括：红色微发光二极管、绿色微发光二极管、及蓝色微发光二极管。
所述量子点层包括：设于各个红色微发光二极管上方的红色量子点区、设于各个绿色微发光二极管上方的绿色量子点区、及设于各个蓝色微发光二极管上方的蓝色量子点区。
本发明还提供一种微发光二极管显示面板的制作方法，包括如下步骤：
步骤1、提供一基板，在所述基板上形成阵列排布的多个微发光二极管；
步骤2、在所述多个微发光二极管上覆盖透明的封装层，对所述多个微发光二极管进行封装；
步骤3、在所述封装层上形成量子点层。
所述步骤1具体包括：首先提供一原生基板，在所述原生基板上生成多个微发光二极管，再通过微转印的方法将所述多个微发光二极管转印到基板上；
所述原生基板为蓝宝石类基板；
所述基板为柔性基板、或刚性基板。
所述步骤2中通过旋涂的方法在所述多个微发光二极管上覆盖封装层；
所述封装层的材料为：聚对二甲苯、或有机树脂。
所述多个微发光二极管包括：红色微发光二极管、绿色微发光二极管、及蓝色微发光二极管。
所述量子点层包括：设于各个红色微发光二极管上方的红色量子点区、设于各个绿色微发光二极管上方的绿色量子点区、及设于各个蓝色微发光二极管上方的蓝色量子点区。
本发明还提供一种微发光二极管显示面板，包括：基板、设于所述基板上的阵列排布的多个微发光二极管、覆盖所述多个微发光二极管的透明的封装层、以及设于所述封装层上的量子点层；
其中，所述基板为柔性基板、或刚性基板；
其中，所述封装层的材料为：聚对二甲苯、或有机树脂。
本发明的有益效果：本发明提供了一种微发光二极管显示面板，其包括：基板、设于所述基板上的阵列排布的多个微发光二极管、覆盖所述多个微发光二极管的透明的封装层、以及设于所述封装层上的量子点层，通过在封装层上增设量子点层，利用微发光二极管发出的短波长光激发量子点层发光，从而使微发光二极管和量子点层共同组成微发光二极管显示面板的基本显示单元，能够扩大微发光二极管显示面板的色域，提升微发光二极管显示面板的显示品质。本发明还提供一种微发光二极管显示面板的制作方法，能够扩大微发光二极管显示面板的色域，提升微发光二极管显示面板的显示品质。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为本发明的微发光二极管显示面板的第一实施例的结构示意图；
图2为本发明的微发光二极管显示面板的第二实施例的结构示意图；
图3为本发明的微发光二极管显示面板的制作方法的流程图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1或图2，本发明首先提供一种微发光二极管显示面板，包括：基板1、设于所述基板1上的阵列排布的多个微发光二极管2、覆盖所述多个微发光二极管2的透明的封装层3、以及设于所述封装层3上的量子点层4。
具体地，所述基板1为柔性基板、或刚性基板，所述多个微发光二极管2通过微转印的方法由蓝宝石类的原生基板上转印到基板1上，所述基板1在转印前预先形成有电路图案，以驱动所述多个微发光二极管2发光， 所述微发光二极管2可选择基于氮化镓(GaN)的发光二极管，所述基板1为硅基板。
进一步地，所述封装层3的作用为保护微发光二极管2，防止水汽侵入，并且需要具备良好耐热性、绝缘性和成膜稳定性，可选的材料包括但不限于各类型聚对二甲苯、或有机树脂。所述封装层3的可通过旋涂工艺形成，厚度在50nm至0.5mm之间。可选地，如图1所示，在本发明的第一实施例中，所述封装层3在各个微发光二极管2的间隔处的厚度大于微发光二极管2上的厚度，使得封装层3上表面为一平整表面，所述量子点层4的上表面也为一平整表面。如图2所示，在本发明的第二实施例中，所述封装层3在各个微发光二极管2的间隔处的厚度等于微发光二极管2上的厚度，使得所述封装层3在各个微发光二极管2的间隔处形成凹槽，所述量子点层4顺着所述封装层3形成，其在各个微发光二极管2的间隔处也形成凹槽。
可选地，所述多个微发光二极管2包括：红色微发光二极管、绿色微发光二极管、及蓝色微发光二极管。所述量子点层4包括：设于各个红色微发光二极管上方的红色量子点区、设于各个绿色微发光二极管上方的绿色量子点区、及设于各个蓝色微发光二极管上方的蓝色量子点区。也即所述量子点层4中各个区域的发光颜色对应其下方的微发光二极管2的发光颜色形成。
值得一提的是，通过在封装层3上增设量子点层4，利用微发光二极管2发出的短波长光激发量子点层4发光，从而使微发光二极管2和量子点层4共同组成微发光二极管显示面板的基本显示单元，相比于仅采用微发光二极管作为基本显示单元的现有技术，能够扩大微发光二极管显示面板的色域，提升微发光二极管显示面板的显示品质。
具体地，所述量子点层4所使用的量子点材料的结构包括发光核(例如绿色量子点材料可包括磷化铟(InP)、及硫化硒化镉(Cd2SSe)等，红色量子点材料可包括硒化镉(CdSe)、及砷化铟(InAs)等)、无机保护壳层(材料可选择硫化镉(CdS)、硒化锌(ZnSe)、硫化锌(ZnS)、及氧化锌(ZnO)等材料中的一种或多种组合)、以及表面配体(材料可选择R-COOH、R-NH2、或R-SH，其中R为12～20个碳原子的直链烷烃或烯烃分子)。
请参阅图3，本发明还提供一种微发光二极管显示面板的制作方法，包括如下步骤：
步骤1、提供一基板1，在所述基板1上形成阵列排布的多个微发光二 极管2。
具体地，所述步骤1具体包括：首先提供一原生基板，在所述原生基板上生成多个微发光二极管2，再通过微转印的方法将所述多个微发光二极管2转印到基板1上；所述原生基板为蓝宝石类基板；所述基板1为柔性基板、或刚性基板。所述基板1在转印前预先形成有电路图案，以驱动所述多个微发光二极管2发光，所述微发光二极管2可选择基于氮化镓的发光二极管，所述基板1为硅基板。
步骤2、在所述多个微发光二极管2上覆盖透明的封装层3，对所述多个微发光二极管2进行封装。
具体地，所述封装层3的作用为保护微发光二极管2，防止水汽侵入，并且需要具备良好耐热性、绝缘性和成膜稳定性，可选的材料包括但不限于：各类型聚对二甲苯、或有机树脂。所述封装层3的可通过旋涂工艺形成，厚度在50nm至0.5mm之间。
步骤3、在所述封装层3上形成量子点层4。
可选地，如图1所示，在本发明的第一实施例中，所述封装层3在各个微发光二极管2的间隔处的厚度大于微发光二极管2上的厚度，使得封装层3上表面为一平整表面，所述量子点层4的上表面也为一平整表面。如图2所示，在本发明的第二实施例中，所述封装层3在各个微发光二极管2的间隔处的厚度等于微发光二极管2上的厚度，使得所述封装层3在各个微发光二极管2的间隔处形成凹槽，所述量子点层4顺着所述封装层3形成，其在各个微发光二极管2的间隔处也形成凹槽。
可选地，所述多个微发光二极管2包括：红色微发光二极管、绿色微发光二极管、及蓝色微发光二极管。所述量子点层4包括：设于各个红色微发光二极管上方的红色量子点区、设于各个绿色微发光二极管上方的绿色量子点区、及设于各个蓝色微发光二极管上方的蓝色量子点区。也即所述量子点层4中各个区域的发光颜色对应其下方的微发光二极管2的发光颜色形成。
值得一提的是，通过在封装层3上增设量子点层4，利用微发光二极管2发出的短波长光激发量子点层4发光，从而使微发光二极管2和量子点层4共同组成微发光二极管显示面板的基本显示单元，相比于仅采用微发光二极管作为基本显示单元的现有技术，能够扩大微发光二极管显示面板的色域，提升微发光二极管显示面板的显示品质。
综上所述，本发明提供了一种微发光二极管显示面板，其包括：基板、设于所述基板上的阵列排布的多个微发光二极管、覆盖所述多个微发光二 极管的透明的封装层、以及设于所述封装层上的量子点层，通过在封装层上增设量子点层，利用微发光二极管发出的短波长光激发量子点层发光，从而使微发光二极管和量子点层共同组成微发光二极管显示面板的基本显示单元，能够扩大微发光二极管显示面板的色域，提升微发光二极管显示面板的显示品质。本发明还提供一种微发光二极管显示面板的制作方法，能够扩大微发光二极管显示面板的色域，提升微发光二极管显示面板的显示品质。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (13)

  1. 一种微发光二极管显示面板，包括：基板、设于所述基板上的阵列排布的多个微发光二极管、覆盖所述多个微发光二极管的透明的封装层、以及设于所述封装层上的量子点层。
  2. 如权利要求1所述的微发光二极管显示面板，其中，所述基板为柔性基板、或刚性基板。
  3. 如权利要求1所述的微发光二极管显示面板，其中，所述封装层的材料为：聚对二甲苯、或有机树脂。
  4. 如权利要求1所述的微发光二极管显示面板，其中，所述多个微发光二极管包括：红色微发光二极管、绿色微发光二极管、及蓝色微发光二极管。
  5. 如权利要求4所述的微发光二极管显示面板，其中，所述量子点层包括：设于各个红色微发光二极管上方的红色量子点区、设于各个绿色微发光二极管上方的绿色量子点区、及设于各个蓝色微发光二极管上方的蓝色量子点区。
  6. 一种微发光二极管显示面板的制作方法，包括如下步骤：
    步骤1、提供一基板，在所述基板上形成阵列排布的多个微发光二极管；
    步骤2、在所述多个微发光二极管上覆盖透明的封装层，对所述多个微发光二极管进行封装；
    步骤3、在所述封装层上形成量子点层。
  7. 如权利要求6所述的微发光二极管显示面板的制作方法，其中，所述步骤1具体包括：首先提供一原生基板，在所述原生基板上生成多个微发光二极管，再通过微转印的方法将所述多个微发光二极管转印到基板上；
    所述原生基板为蓝宝石类基板；
    所述基板为柔性基板、或刚性基板。
  8. 如权利要求6所述的微发光二极管显示面板的制作方法，其中，所述步骤2中通过旋涂的方法在所述多个微发光二极管上覆盖封装层；
    所述封装层的材料为：聚对二甲苯、或有机树脂。
  9. 如权利要求6所述的微发光二极管显示面板的制作方法，其中，所述多个微发光二极管包括：红色微发光二极管、绿色微发光二极管、及蓝色微发光二极管。
  10. 如权利要求9所述的微发光二极管显示面板的制作方法，其中， 所述量子点层包括：设于各个红色微发光二极管上方的红色量子点区、设于各个绿色微发光二极管上方的绿色量子点区、及设于各个蓝色微发光二极管上方的蓝色量子点区。
  11. 一种微发光二极管显示面板，包括：基板、设于所述基板上的阵列排布的多个微发光二极管、覆盖所述多个微发光二极管的透明的封装层、以及设于所述封装层上的量子点层；
    其中，所述基板为柔性基板、或刚性基板；
    其中，所述封装层的材料为：聚对二甲苯、或有机树脂。
  12. 如权利要求11所述的微发光二极管显示面板，其中，所述多个微发光二极管包括：红色微发光二极管、绿色微发光二极管、及蓝色微发光二极管。
  13. 如权利要求12所述的微发光二极管显示面板，其中，所述量子点层包括：设于各个红色微发光二极管上方的红色量子点区、设于各个绿色微发光二极管上方的绿色量子点区、及设于各个蓝色微发光二极管上方的蓝色量子点区。
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