WO2017208802A1

WO2017208802A1 - Semiconductor device

Info

Publication number: WO2017208802A1
Application number: PCT/JP2017/018308
Authority: WO
Inventors: 淳史細川; 中島　浩二; 翔太佐藤
Original assignee: 三菱電機株式会社
Priority date: 2016-06-01
Filing date: 2017-05-16
Publication date: 2017-12-07
Also published as: CN109196637B; JPWO2017208802A1; JP6707634B2; CN109196637A

Abstract

This semiconductor device (101) is provided with: a printed board (11); an electronic component (12) which is arranged on top of the printed board (11); and a heat sink (13) which is arranged below the printed board (11). The printed board (11) comprises an insulating layer (11C) and conductor layers (15). Each one of a plurality of conductor layers (15) has a plurality of first conductor layers (15A) that are electrically connected to the electronic component (12) and a plurality of second conductor layers (15B) that are arranged at a distance from the plurality of first conductor layers (15A) so as to be electrically insulated therefrom. This semiconductor device (101) is also provided with: a first penetration part (16A) which is connected to the plurality of first conductor layers (15A) and extends from one main surface (11a) of the printed board (11) to the other main surface (11b); and a second penetration part (16B) which is connected to the plurality of second conductor layers (15B) and extends from the one main surface (11a) of the printed board (11) to the other main surface (11b). The first conductor layers (15A) and the second conductor layers (15B) at least partially overlap each other when viewed in plan, or alternatively, the first conductor layers (15A) and the second conductor layers (15B) are arranged at a distance from each other in a direction along the one main surface (11a).

Description

Semiconductor device

The present invention relates to a semiconductor device, and more particularly to a semiconductor device that radiates heat generated from electronic components on a printed board through the printed board.

In recent years, semiconductor devices used in power electronics equipment such as in-vehicle equipment tend to be multifunctional, high output, and downsized. Accordingly, the amount of heat generated per unit volume of electronic components mounted on the semiconductor device is greatly increased, and a semiconductor device having high heat dissipation performance is desired.

Semiconductor devices that dissipate heat generated from electronic components are disclosed in, for example, Japanese Patent Application Laid-Open No. 6-77679 (Patent Document 1) and Japanese Patent Application Laid-Open No. 11-34592 (Patent Document 2). In these patent documents, an electronic component is joined above a printed circuit board, and a heat sink is fixed below. The printed circuit board has a heat conduction path formed so as to penetrate from one main surface to the other main surface. With this heat conduction path, heat generated from the electronic component is transmitted to the heat sink via the heat conduction path, and can be radiated from the heat sink to the outside.

JP-A-6-77679 JP-A-11-34592

In the apparatus disclosed in Japanese Patent Laid-Open No. 6-77679, a heat conduction path is provided only in the printed board away from directly below the electronic component. In Japanese Patent Laid-Open No. 11-34592, the electronic component of the printed board is provided. A heat conduction path is provided only underneath. For this reason, since the area of the heat transferable region of the printed circuit board is small and the amount of heat that can be conducted from the electronic component is small, the heat dissipation of the region from the electronic component to the heat sink below it is not sufficient.

The present invention has been made in view of the above problems, and its purpose is to enable heat conduction from an electronic component to a radiator over a wide range centering on the electronic component, and to dissipate heat generated by the electronic component. It is an object to provide a semiconductor device capable of improving the above.

The semiconductor device of the present invention includes a printed circuit board, an electronic component thereon, and a radiator below it. The printed circuit board includes an insulating layer and a conductor layer. Each of the plurality of conductor layers includes a plurality of first conductor layers electrically connected to the electronic component, and a plurality of first conductor layers spaced apart from each other and electrically insulated. A second conductor layer. A plurality of first conductor layers connected to each of the first through-holes extending from one main surface of the printed circuit board to the other main surface; and connected to each of the plurality of second conductive layers; A second penetrating portion extending from one main surface to the other main surface. The first conductor layer and the second conductor layer at least partially overlap each other in a planar manner, or are spaced apart from each other in the direction along one main surface.

According to the present invention, there is a path for radiating heat over a wide range including not only the lower part of the electronic part but also the area outside the electronic part. Since the range of the heat dissipation path is widened, the thermal resistance in the region from the electronic component to the radiator can be reduced, and a semiconductor device having high heat dissipation performance from the electronic component to the radiator can be provided.

It is a schematic perspective view which shows the external appearance aspect of the semiconductor device of this Embodiment. 1 is a schematic cross-sectional view showing a configuration of a semiconductor device as a first example of Embodiment 1. FIG. 3 is a schematic cross-sectional view showing a configuration of a semiconductor device as a second example of the first embodiment. FIG. 4 is a schematic cross-sectional view showing a configuration of a semiconductor device as a third example of the first embodiment. FIG. FIG. 6 is a schematic cross sectional view showing the configuration of a semiconductor device as a fourth example of the first embodiment. FIG. 6 is a schematic cross-sectional view showing a configuration of a semiconductor device as a fifth example of the first embodiment. It is a schematic sectional drawing explaining the heat-transfer aspect from the electronic component to the housing | casing for thermal radiation. 6 is a schematic cross-sectional view showing a configuration of a semiconductor device as a sixth example of the first embodiment. FIG. FIG. 6 is a schematic cross-sectional view showing a configuration of a semiconductor device as a first example of the second embodiment. FIG. 6 is a schematic cross-sectional view showing a configuration of a semiconductor device as a second example of the second embodiment. FIG. 6 is a schematic cross-sectional view showing a configuration of a semiconductor device as a third example of the second embodiment. FIG. 6 is a schematic cross-sectional view showing a configuration of a semiconductor device as a fourth example of the second embodiment. FIG. 10 is a schematic cross-sectional view showing a configuration of a semiconductor device as a first example of the third embodiment. 12 is a schematic cross-sectional view showing a configuration of a semiconductor device as a second example of the third embodiment. FIG. FIG. 10 is a schematic cross-sectional view showing a part of the configuration of a semiconductor device according to a fourth embodiment and a heat transfer mode from an electronic component to a heat dissipation housing in the semiconductor device. FIG. 16 is a schematic enlarged perspective view of a region XVI surrounded by a dotted line in FIG. 15.

Hereinafter, an embodiment will be described with reference to the drawings.
Embodiment 1 FIG.
FIG. 1 shows the appearance of the whole or a part of the semiconductor device of this embodiment. That is, when FIG. 1 is a part of a semiconductor device, FIG. 1 shows a mode in which only a part of the whole semiconductor device is cut out. Referring to FIG. 1, semiconductor device 100 of the present embodiment is used for a power conversion device mounted on, for example, power electronics equipment. The semiconductor device 100 mainly includes a printed circuit board 11, an electronic component 12, a heat radiating housing 13, and screws 14.

The printed circuit board 11 is a flat plate member having a rectangular shape in plan view, for example, which forms the foundation of the entire semiconductor device 100. A plurality of wirings, that is, conductor layers, which will be described later, are formed on the printed circuit board 11. The plurality of conductor layers electrically connect the electronic component 12 and other peripheral circuit components not shown.

The electronic component 12 is bonded to one main surface side of the printed circuit board 11, that is, the upper side in FIG. The electronic component 12 is a package in which a semiconductor chip including a MOSFET (Metal Oxide Semiconductor Field Effect Transistor), an IGBT (Insulated Gate Bipolar Transistor), or a diode is sealed with a resin. Since this semiconductor chip controls high power, the amount of heat generated by the electronic component 12 during operation of the semiconductor device 100 is as large as several watts to several tens of watts. For this reason, when the semiconductor device 100 is operated, a structure for radiating heat from the semiconductor device 100 by water cooling or air cooling is required.

The heat radiating housing 13 is a member as a heat radiator fixed to the other main surface side opposite to one main surface of the printed circuit board 11, that is, the lower side in FIG. The heat dissipating housing 13 is kept cooled to a certain temperature or lower by a device such as air cooling or water cooling (not shown) separately installed in the semiconductor device 100. Depending on the configuration of the semiconductor device 100, the heat radiating housing 13 may be a heat radiating device such as a heat sink or a heat pipe instead of the housing. However, in the following description, the radiator is assumed to be the heat radiating housing 13.

The screw 14 is used as a fixing member that fixes the printed circuit board 11 so as to contact the heat radiating housing 13. Since the fixing member only needs to fix the printed circuit board 11 and the heat radiating housing 13, the connecting member is not limited to the screw 14, and other connecting members such as rivets may be used instead. Further, in FIG. 1, the screw 14 is disposed in a region that is generally adjacent to the four corners of the printed circuit board 11 in plan view. However, the number of screws 14 is not limited to four, and may be any number as long as the heat dissipating housing 13 can be fixed to the printed board 11 by fastening. By fixing the printed circuit board 11 and the heat radiating housing 13 by a fixing member such as a screw 14, heat generated in the electronic component 12 is conducted to the heat radiating housing 13 through the printed circuit board 11, and the heat radiating housing. The heat can be radiated from 13 to the outside of the semiconductor device 100.

2 to 6 show examples of cross-sectional aspects cut so as to pass through the two screws 14 of FIG. 1 and the electronic component 12. The same applies to the sectional views shown in the following embodiments (each example). Next, an example of a specific structure of the semiconductor device 100 of the present embodiment will be described in detail with reference to FIGS.

Referring to FIG. 2, in semiconductor device 101 as a first example of semiconductor device 100 of the present embodiment, printed circuit board 11 includes one main surface 11a and the other main surface 11b on the opposite side. Have. The printed board 11 has a configuration including an insulating layer 11 C and a plurality of conductor layers 15.

The insulating layer 11 C is a member that forms the main body of the printed circuit board 11. The insulating layer 11C is made of, for example, glass fiber and an epoxy resin, but is not limited thereto, and may be made of, for example, an aramid resin and an epoxy resin. Alternatively, the insulating layer 11C may be formed of a ceramic material.

The conductor layer 15 extends along the main surface of the insulating layer 11C, that is, along one main surface 11a and the other main surface 11b of the printed board 11. A plurality of conductor layers 15 are laminated through a part of the insulating layer 11C from the electronic component 12 side, that is, the upper side of the printed board 11 to the heat radiating housing 13 side, that is, the lower side of the printed board 11. That is, a part of the insulating layer 11 C is sandwiched between one conductor layer 15 among the plurality of conductor layers 15 stacked and another conductor layer 15 adjacent thereto. In the semiconductor device 101, the conductor layer 15 is laminated in four layers at intervals in the vertical direction of the figure.

The four conductor layers 15 are laminated between the first conductor layer 15A and a plurality of first conductor layers 15A electrically connected to the electronic component 12 and the first conductor layer 15A in the left-right direction in the figure. And a plurality of, that is, four second conductor layers 15B, which are electrically insulated (for example, via the insulating layer 11C) and spaced apart from each other. The first conductor layer 15A and the second conductor layer 15B both extend along one main surface 11a and the other main surface 11b of the printed circuit board 11. Since the electronic component 12 is bonded to a relatively central portion of the printed circuit board 11 in a plan view, the first conductor layer 15A electrically connected to the electronic component 12 is formed on the relatively central portion of the printed circuit board 11. Is arranged. On the other hand, the second conductor layer 15B disposed between the first conductor layer 15A and the first conductor layer 15A via the insulating layer 11C is not electrically connected to the first conductor layer 15A. And is arranged in a relatively outer portion of the printed circuit board 11.

The first conductor layer 15A has a first conductor layer 15A1, a first conductor layer 15A2, and a first conductor layer from the lower layer (radiation housing 13 side) to the upper layer (electronic component 12 side) in the figure. 15A3 and the first conductor layer 15A4 are stacked in this order. In addition, the second conductor layer 15B extends from the lower layer (heat dissipating housing 13 side) to the upper layer (electronic component 12 side) in the figure, the second conductor layer 15B1, the second conductor layer 15B2, and the second conductor. The layer 15B3 and the second conductor layer 15B4 are stacked in this order. The first conductor layer 15A1 and the second conductor layer 15B1 are formed as the same layer. Similarly, each of the first conductor layer 15A2 and the second conductor layer 15B2, the first conductor layer 15A3 and the second conductor layer 15B3, and the first conductor layer 15A4 and the second conductor layer 15B4 Are also formed as the same layer. As described above, the first conductor layer 15A and the second conductor layer 15B arranged as the same layer are arranged at a distance from each other in the horizontal direction of the drawing along the one main surface 11a. The distance between the first conductor layer 15A2 (15A3) and the second conductor layer 15B2 (15B3), which are the same layer, varies depending on the voltage handled by the semiconductor device 101, but is, for example, 0.4 mm or more.

In FIG. 2, the first conductor layer 15A1 and the second conductor layer 15B1 are formed on the other main surface 11b of the printed circuit board 11. The first conductor layers 15A2 and 15A3 and the second conductor layers 15B2 and 15B3 are disposed inside the printed board 11 so as to be buried in the insulating layer 11C while maintaining a distance from the other conductor layers. The first conductor layer 15A4 and the second conductor layer 15B4 are formed on one main surface 11a of the printed board 11.

As shown in FIG. 2, the first conductor layers 15 A stacked on each other have one or the other

main surfaces

11 a and 11 b based on the distance between the pair of first conductor layers 15 A adjacent to each other inside the printed circuit board 11. The first conductor layer 15A and the first conductor layer 15A adjacent to the first conductor layer 15A are arranged such that the distance between them is smaller. Specifically, the vertical distance in FIG. 2 between the first conductor layer 15A1 and the first conductor layer 15A2 and the vertical distance in FIG. 2 between the first conductor layer 15A3 and the first conductor layer 15A4. The distance is smaller than the vertical distance in FIG. 2 between the first conductor layer 15A2 and the first conductor layer 15A3. The same applies to the second conductor layer 15B formed as the same layer as the first conductor layer 15A. That is, the distance between the second conductor layer 15B1 and the second conductor layer 15B2 in the vertical direction in FIG. 2 and the distance between the second conductor layer 15B3 and the second conductor layer 15B4 in FIG. The distance between the second conductor layer 15B2 and the second conductor layer 15B3 in the vertical direction in FIG. 2 is smaller.

More specifically, the vertical distance in FIG. 2 between the first conductor layer 15A1 and the first conductor layer 15A2 and the vertical direction in FIG. 2 between the first conductor layer 15A3 and the first conductor layer 15A4. The distance is, for example, about 0.2 mm, and is generally not less than 0.1 mm and not more than 0.3 mm. The distance in the vertical direction in FIG. 2 between the first conductor layer 15A2 and the first conductor layer 15A3 is, for example, about 1.0 mm, and is generally not less than 0.7 mm and not more than 1.3 mm. Regarding the distance, the same can be said for the second conductor layer 15B as for the first conductor layer 15A.

The first conductor layers 15A1 and 15A4 are formed so as to extend over a wide range of one main surface 11a and the other main surface 11b from a region overlapping the electronic component 12 in a plan view to a region outside thereof. For this reason, the first conductor layers 15A1 and 15A4 and the second conductor layers 15B1 and 15B4 that are spaced apart from each other are spread only in the outermost edge of the printed circuit board 11 and a relatively narrow area adjacent thereto. Is formed. On the other hand, the first conductor layers 15A2 and 15A3 are formed so as to extend only in a part of the region immediately below the electronic component 12, that is, in a relatively central portion of the electronic component 12 in plan view, at least in FIG. Yes. For this reason, the second conductor layers 15B2 and 15B3 in FIG. 2 are arranged so as to extend to the inner region in plan view as compared with the second conductor layers 15B1 and 15B4. It is arranged to overlap.

As a result, the first conductor layer 15A and the second conductor layer 15B may overlap each other in a planar manner at least partially. Specifically, in FIG. 2, for example, the first conductor layer 15A4 and the second conductor layer 15B3 adjacent to the lower side of the first conductor layer 15A4 partially overlap each other, and between them, An insulating layer 11C is interposed. That is, the first conductor layer 15A4 and the second conductor layer 15B3 face each other in the vertical direction of FIG. Similarly, for example, the first conductor layer 15A1 and the second conductor layer 15B2 adjacent to the upper side of the first conductor layer 15A1 overlap each other partially in the vertical direction in FIG. 11C is interposed. As shown in FIG. 2, the plurality of first conductor layers 15 A and the plurality of second conductor layers 15 B are planarly arranged around the electronic component 12, that is, in a region adjacent to the electronic component 12 in the left-right direction in the drawing. It is preferable to provide areas that overlap each other.

The plurality of conductor layers 15, that is, the first conductor layer 15A and the second conductor layer 15B are preferably formed of, for example, a copper thin film, particularly when the insulating layer 11C is made of a resin material, for example. The conductor layer 15 made of a copper thin film generally has a thickness of about 10 to several hundred μm. As the conductor layer 15 becomes thicker, heat can be spread over a wide range in the horizontal direction along the one main surface 11a and the like, and the heat dissipation performance as the semiconductor device 101 is further improved.

However, the conductor layer 15 may be formed as a thin film of an alloy mainly composed of copper or silver, particularly when the insulating layer 11C is made of a ceramic material, for example. However, even when the insulating layer 11C is made of a resin material, the conductor layer 15 may be formed of a thin film of an alloy mainly composed of copper or silver. That is, the conductor layer 15 (the first conductor layer 15A and the second conductor layer 15B) is selected from the group consisting of a copper thin film, a copper alloy thin film, and a silver alloy thin film. One of them.

The printed circuit board 11 is formed with a through portion 16 in addition to the conductor layer 15 as a plurality of wirings. The penetrating portion 16 extends so as to intersect (for example, orthogonally cross) the one main surface 11a and the other main surface 11b so as to reach the other main surface 11b from the one main surface 11a of the printed board 11.

The penetration part 16 has a first penetration part 16A and a second penetration part 16B. A plurality (five in FIG. 2) of first through portions 16A are formed at intervals so as to intersect the first conductor layers 15A1, 15A2, 15A3, and 15A4. The first through portion 16A is a conductor portion formed so as to fill the inside of the via hole formed in the printed circuit board 11 so as to reach the first conductor layer 15A4 from the first conductor layer 15A1. The first conductor layers 15A1, 15A2, 15A3, and 15A4 are electrically connected to each other. Basically, the first through portion 16A is made of copper or an alloy containing copper as a main component. As a result, the first through portion 16A and each of the plurality of first conductor layers 15A1, 15A2, 15A3, and 15A4 are electrically and mechanically connected to each other. It arrange | positions so that a member may be comprised.

The interval between the first through portions 16A adjacent to each other is, for example, not less than 0.5 mm and not more than 1.0 mm. The first through portion 16A is, for example, circular in plan view, and the diameter of the circle, that is, the width in the left-right direction of the first through portion 16A in FIG. 2 is preferably 0.2 mm or more and 0.3 mm or less, for example. .

Further, the second penetrating portion 16B is disposed outside the first penetrating portion 16A in plan view. Specifically, a through hole 17 is formed in the printed board 11 so as to reach from the one main surface 11a to the other main surface 11b in a region outside the electronic component 12 in a plan view. A second through portion 16 B as a cylindrical conductor film is formed on the inner wall portion of the through hole 17. Since the through hole 17 is connected so as to intersect the second conductor layers 15B1, 15B2, 15B3, and 15B4, the second through portion 16B in the through hole 17 is connected to the second conductor layers 15B1, 15B2, and 15B2. It is connected so as to cross 15B3 and 15B4. Therefore, the second through portion 16B is electrically connected to the second conductor layers 15B1, 15B2, 15B3, and 15B4. Basically, the second through portion 16B is formed of copper or an alloy containing copper as a main component. As a result, the second through portion 16B and each of the plurality of second conductor layers 15B1, 15B2, 15B3, and 15B4 are electrically and mechanically connected to each other. It arrange | positions so that a member may be comprised.

A screw 14 as a fixing member is disposed inside the through hole 17. The screw 14 extends in the vertical direction in FIG. 2 so as to reach from the one main surface 11a to the other main surface 11b, penetrate the printed circuit board 11, and reach the inside of the heat dissipating housing 13 below. Therefore, the screw 14 is provided inside the second through portion 16B. Accordingly, the screw 14 fixes the printed circuit board 11 to the heat radiating housing 13. The head portion of the screw 14 may be disposed so as to be in contact with the second conductor layer 15B4, and the surface of the extending portion of the screw 14 may be disposed so as to be in contact with the second through portion 16B.

In addition, the following members are arranged in the semiconductor device 101. An electrode 22 is formed on the electronic component 12. The electrode 22 is disposed so as to enable energization and heat dissipation between the inside and the outside of the electronic component 12. The electrode 22 is disposed so as to be buried in a part of the lower surface of the electronic component 12, but is not limited to such a mode.

A bonding member 23 is disposed between the electrode 22 of the electronic component 12 and the first conductor layer 15A4 of the printed circuit board 11, and the electrode 22 and the first conductor layer 15A4 are mutually connected by the bonding member 23. It is joined. The joining member 23 joins the electrode 22 and the first conductor layer 15A4 to each other, whereby the electronic component 12 and the printed board 11 are joined and fixed to each other.

The joining member 23 is preferably made of a material having a low electrical resistance and a high thermal conductivity, such as solder. In this way, the bonding member 23 bonds and fixes the electronic component 12 and the printed board 11 by fixing the electrode 22 of the electronic component 12 and the first conductor layer 15A of the printed board 11 to be bonded. be able to.

A resist layer 21 is disposed on a part of one main surface 11a of the printed circuit board 11 and a part of the other main surface 11b (not shown in FIG. 2). Specifically, for example, the resist layer 21 is disposed so as to be sandwiched between the electronic component 12 and the printed circuit board 11 from a region adjacent to the outside of the outermost edge of the electronic component 12 to a region adjacent to the inside thereof. . The resist layer 21 is disposed in an outer region in a plan view of the joining member 23 such as solder. The resist layer 21 suppresses the wetting and spreading of the joining member 23 such as solder, and easily secures electrical insulation between the electronic component 12 and the first conductor layer 15A4 in the region outside the electronic component 12. Yes.

Since the material of the resist layer 21 is a resin material, if the resist layer 21 is sandwiched between regions of the electronic component 12 and the printed circuit board 11, the thermal conductivity from the electronic component 12 to the printed circuit board 11 decreases at that portion. To do. Therefore, the resist layer 21 is preferably removed even on the one main surface 11a in the region in contact with the screw 14 and the region adjacent thereto.

An insulating member 24 is disposed between the other main surface 11 b of the printed board 11 and the heat radiating housing 13. Specifically, the insulating member 24 is disposed between the first conductor layer 15A1 formed on the other main surface 11b and the heat radiating housing 13. However, in FIG. 2, the thermal diffusion plate 25 is disposed on the other main surface 11b so as to cover the first conductor layer 15A1. Therefore, the insulating member 24 is disposed between the heat diffusing plate 25 and the heat radiating housing 13.

The insulating member 24 may be formed by thinly applying a liquid substance, for example, to the surface of the heat radiating housing 13. For example, the sheet-like member may include the heat diffusion plate 25 and the heat radiating housing. 13 may be arranged so as to be sandwiched between the two. The material used for the insulating member 24 is selected according to the performance required for the semiconductor device 101. Specific examples of the performance of the semiconductor device 101 include ensuring an insulation performance of 2.5 kV / min or more between the semiconductor chip mounted on the electronic component 12 and the heat radiating housing 13, or a heat radiating housing. If the temperature of the body 13 is 60 ° C. and the calorific value is 20 W, the thermal resistance is required to be 2.5 K / W or less.

The heat diffusion plate 25 is joined to the first conductor layer 15A1 disposed on the most main surface 11b side among the plurality of first conductor layers 15 through a joining member such as solder (not shown). It is preferable. The heat diffusing plate 25 is preferably made of a material having high thermal conductivity such as copper.

A part of the heat generated by the electronic component 12 by driving the electronic component 12 is naturally cooled from the surface of the package of the electronic component 12 to the surrounding air. However, basically, the heat generated by the electronic component 12 is transmitted to the lower side, that is, the printed circuit board 11 and the heat radiating housing 13, and is radiated from the heat radiating housing 13 to the outside of the semiconductor device 101. A structure for this purpose is shown in FIG.

In this way, the insulating member 24 and the heat diffusion plate 25 are sandwiched between the first conductor layer 15A1 and the heat radiating housing 13. For this reason, the distance between one main surface 13a of the heat radiating housing 13, that is, the upper main surface in FIG. 2 and the other main surface 13b (the lower side in FIG. 2) on the opposite side is the first conductor layer. Just below 15A, it is shorter than just below the second conductor layer 15B. In other words, one main surface 13a is recessed below the first conductor layer 15A and below the second conductor layer 15B in the lower side of FIG.

Referring to FIG. 3, the semiconductor device 102 as the second example of the semiconductor device 100 of the present embodiment basically has the same configuration as the semiconductor device 101 as the first example of FIG. Therefore, in FIG. 3, the same components as those in FIG. 2 are denoted by the same reference numerals, and the description thereof will not be repeated as long as the aspect is the same. The semiconductor device 102 in FIG. 3 differs from the semiconductor device 101 in FIG. 2 in the area of the first conductor layers 15A2 and 15A3 and the second conductor layers 15B2 and 15B3 in plan view.

Specifically, in the semiconductor device 102 of FIG. 3, the first conductor layers 15A2 and 15A3 cover almost the entire region directly below the electronic component 12 in plan view, more specifically, for example, the entire region overlapping the electrode 22. The number of first through portions 16A is larger than that in FIG. 2 (seven in FIG. 3). As a result, the second conductor layers 15B2 and 15B3 are narrower than the semiconductor device 101. The first conductor layers 15A1 and 15A4 and the second conductor layers 15B1 and 15B4 are basically the same as those of the semiconductor device 101.

Referring to FIG. 4, a semiconductor device 103 as a third example of the semiconductor device 100 of the present embodiment basically has the same configuration as the

semiconductor devices

101 and 102. For this reason, in FIG. 4, the same components as those in FIGS. 2 and 3 are denoted by the same reference numerals, and the description thereof will not be repeated as long as the aspect is the same. The semiconductor device 103 in FIG. 4 is different from the

semiconductor devices

101 and 102 in the area of the first conductor layers 15A2 and 15A3 and the second conductor layers 15B2 and 15B3 in plan view.

Specifically, in the semiconductor device 103 of FIG. 4, the first conductor layers 15A2 and 15A3 extend from the region immediately below the electronic component 12 in a plan view to the region outside thereof, as shown in FIG. It is formed in a wider range than that. More specifically, the first conductor layers 15A2 and 15A3 in FIG. 4 are spread so as to overlap the entire region overlapping the first conductor layers 15A1 and 15A4, for example, and the number of the first through portions 16A is correspondingly increased. Are formed more than FIG. 3 (15 in FIG. 4). As a result, the second conductor layers 15B2 and 15B3 are narrower than the

semiconductor devices

101 and 102. The first conductor layers 15A1 and 15A4 and the second conductor layers 15B1 and 15B4 are basically the same as those of the semiconductor device 101.

In the semiconductor device 103, since the area occupied by the first conductor layer 15A is very large and the area occupied by the second conductor layer 15B is small, the first conductor layer 15A and the second conductor layer 15B are viewed in plan view. Does not include opposing areas so as to overlap each other. However, also in the semiconductor device 103, at least the first conductor layer 15A and the second conductor layer 15B are disposed with an interval of, for example, 0.4 mm or more therebetween via the insulating layer 11C. For this reason, the one first member formed by connecting the first through portion 16A and the first conductor layer 15A to each other, and the second through portion 16B and the second conductor layer 15B are connected to each other. The one united second member is electrically insulated from each other.

Referring to FIG. 5, the semiconductor device 104 as the fourth example of the semiconductor device 100 of the present embodiment basically has the same configuration as the semiconductor device 101 as the first example of FIG. Therefore, in FIG. 5, the same components as those in FIG. 2 are denoted by the same reference numerals, and description thereof will not be repeated as long as the aspect is the same. The semiconductor device 104 in FIG. 5 is different from the semiconductor device 101 in FIG. 2 in the number of layers of the first conductor layer 15A and the second conductor layer 15B.

Specifically, in the semiconductor device 104 of FIG. 5, the first conductor layer 15A is the first conductor layer 15A1, 15A2, 15A3, and the second conductor layer 15B is the second conductor layer 15B1. , 15B2 and 15B3. In this regard, in the semiconductor device 104, the first conductor layer 15A is a four-layered first conductor layer 15A1 to 15A4, and the second conductor layer 15B is a four-layered second conductor layer 15B1 to 15B4. It differs from the devices 101 to 103 in configuration.

The first conductor layer 15A3 in FIG. 5 corresponds to the first conductor layer 15A4 in FIGS. 2 to 4, and the second conductor layer 15B3 in FIG. 5 corresponds to the second conductor layer 15B4 in FIGS. To do. Therefore, the first conductor layer 15A3 in FIG. 5 is formed on one main surface 11a similarly to the first conductor layer 15A4 in FIGS. 2 to 4, and the formed region and the area in plan view are the same. The second conductor layer 15B3 in FIG. 5 is formed on one main surface 11a similarly to the second conductor layer 15B4 in FIGS. 2 to 4, and the formed region and the area in plan view are the same. The first conductor layer 15A2 is disposed substantially at the center between the first conductor layer 15A1 and the first conductor layer 15A3 in the vertical direction of FIG. 5, and the second conductor layer 15B2 is the second conductor layer 15B2 in the vertical direction of FIG. The second conductor layer 15B1 and the second conductor layer 15B3 are disposed substantially at the center.

As described above, the first conductor layer 15A and the second conductor layer 15B can have a configuration in which an arbitrary number of layers of three or more layers are stacked with a space therebetween. That is, the first conductor layer 15A and the second conductor layer 15B are not limited to three layers and four layers, and may be five layers or more. Also in the semiconductor device 104, the plane areas of the first conductor layer 15A2 and the second conductor layer 15B2 may be the same as those in FIGS.

Referring to FIG. 6, the semiconductor device 105 as the fifth example of the semiconductor device 100 of the present embodiment basically has the same configuration as the semiconductor device 101 as the first example of FIG. Therefore, in FIG. 6, the same components as those in FIG. 2 are denoted by the same reference numerals, and description thereof will not be repeated as long as the aspect is the same. The semiconductor device 105 in FIG. 6 includes the first heat transfer member 31 in at least one of the region between the printed circuit board 11 and the screw 14 and the region between the printed circuit board 11 and the heat radiating housing 13. Further, the semiconductor device 101 is different from the semiconductor device 101 of FIG.

Specifically, in the semiconductor device 105 of FIG. 6, the region sandwiched between the second conductor layer 15B4 of the printed circuit board 11 and the head of the screw 14, and the second conductor layer 15B1 of the printed circuit board 11 The first heat transfer member 31 is disposed in both areas sandwiched between the heat dissipation casing 13 and the heat dissipation casing 13 directly below. However, the first heat transfer member 31 may be disposed only in one of these regions. As the first heat transfer member 31, insulating heat transfer grease or the like is preferably used.

6 shows an example in which the first heat transfer member 31 is applied to the semiconductor device 101 of FIG. 2, but the first heat transfer is applied to the semiconductor devices 102 to 104 of FIGS. The member 31 for application may be applied.

Next, the effect of the present embodiment will be described while explaining the heat transfer mode of the semiconductor device 100 with reference to FIG.

FIG. 7 shows a heat transfer mode from the electronic component 12 in the region of the electronic device 12 and the printed board 11 of the semiconductor device 102 shown in FIG. 3, for example. Referring to FIG. 7, in the first member which is a part of copper or a copper-based alloy composed of the first conductor layer 15A and the first through portion 16A, a solid line arrow in the figure. Heat is transferred from the electronic component 12 to the heat dissipation housing 13 through the first heat dissipation path HA shown in FIG. Specifically, heat generated in the electronic component 12 is transmitted through the electrode 22 and the joining member 23, and is transmitted from the electronic component 12 side to the heat radiating housing 13 side through the first through portion 16 A of the printed circuit board 11 therebelow. . Thereafter, the heat reaches the heat radiating housing 13 via the heat diffusion plate 25 and the insulating member 24, and is radiated from there to the outside of the semiconductor device. As the first heat radiation path HA, there is a path that travels in the horizontal direction along the first conductor layers 15A1, 15A2, 15A3, and 15A4 although solid arrows are not shown.

In this way, first, a plurality of first conductor layers 15A that are electrically connected to the electronic component 12 that generates heat, and a first through portion 16A that is connected to the first conductor layers 15A and extends up and down the printed circuit board 11. A first heat dissipation path HA is formed by the first member. As a result, in the present embodiment, for example, the electronic component 12 is mainly connected to the electronic component 12 as compared with the case where the electronic component 12 is not electrically connected and the heat dissipation path is provided only in a region away from the electronic component 12 in plan view. Heat can be radiated to the heat radiating housing 13 over a wide range by the first heat radiation path HA of the first member capable of conducting heat with high thermal conductivity. Therefore, the thermal resistance in the region between the electronic component 12 and the heat radiating housing 13 can be reduced, and the heat radiation efficiency from the electronic component 12 to the heat radiating housing 13 can be increased.

3 is wider than the semiconductor device 101 of FIG. 2, and the semiconductor device 103 of FIG. 4 is wider than the semiconductor device 102 of FIG. Is formed. Therefore, the heat dissipation effect is higher in the semiconductor device 102 than in the semiconductor device 101 and in the semiconductor device 103 than in the semiconductor device 102.

However, when only the first heat radiation path HA electrically connected to the electronic component 12 is provided directly below the electronic component 12, heat radiation from the peripheral portion may be weakened. Therefore, in the present embodiment, the plurality of first conductor layers 15A are connected to the plurality of second conductor layers 15B and the second conductor layers 15B that are spaced apart from each other, and the printed board 11 is moved in the vertical direction. A second heat dissipation path HB is formed by the second member with the second penetrating portion 16B extending in the direction. The second heat dissipation path HB is indicated by a dotted arrow in FIG. 7, and is mainly composed of a path that travels in the horizontal direction along the second conductor layers 15B2 and 15B3 and the second through portion 16B. ing. By disposing the second heat dissipation path HB so as to face the first heat dissipation path HA, for example, the thermal resistance in the outer area in plan view of the first heat dissipation path HA is reduced, and the heat dissipation efficiency of this area is reduced. Can be increased. Therefore, the heat dissipation efficiency toward the heat dissipation housing 13 can be further increased.

As described above, the heat radiation path is provided in both the region directly below the electronic component 12 and the outer region in plan view. For this reason, since heat can be radiated from the electronic component 12 to the heat radiating housing 13 in a wider range in plan view, the semiconductor device 100 can be miniaturized.

Note that the first heat dissipation path HA is not formed entirely in the plan view of the printed circuit board 11, and the second heat dissipation path HB is electrically connected from the first heat dissipation path HA so as not to be electrically connected to the first heat dissipation path HA. The reason for the electrical insulation is to prevent the electronic component 12 and the heat radiating housing 13 from being electrically short-circuited with each other via the screw 14 and the second through portion 16B. In general, the semiconductor device 100 is required to be electrically insulated from the electronic component 12 and the heat dissipation housing 13 for safety. For this reason, the insulating member 24 is disposed between the other main surface 11b of the printed circuit board 11 and the heat radiating housing 13, and electrical insulation between the two is ensured.

By sandwiching the insulating layer 11C between the first heat radiation path HA and the second heat radiation path HB, the first heat radiation path HA and the second heat radiation path HB are directly electrically connected without sandwiching the insulating layer 11C. Compared to the case, the heat dissipation to the second heat dissipation path HB is slightly inferior. However, by making the thickness H1 and thickness H3 of the insulating layer 11C shown in FIG. 7 thinner than the thickness H2, for example, by setting the thicknesses H1 and H3 to about 0.2 mm (0.1 mm to 0.3 mm), the first The thermal resistance of the portion of the insulating layer 11C extending from the heat dissipation path HA to the second heat dissipation path HB can be reduced, and transmission in the region of the insulating layer 11C from the first heat dissipation path HA to the second heat dissipation path HB is possible. A decrease in thermal efficiency can be suppressed. Accordingly, the first conductor layer 15A and the second conductor layer 15B as indicated by the left and right arrows in the figure are used as heat dissipation paths, and the first member such as the first conductor layer 15A and the second conductor layer 15B and the like Heat transfer efficiency between the two members can be increased.

However, if the insulating layer 11C in all regions is made thin, the standard printed circuit board 11 material cannot be used, which may increase manufacturing costs. Moreover, if the thickness of the entire printed circuit board 11 is reduced, there is a concern that the strength is weakened. Therefore, as a countermeasure, it is preferable that the region indicated by the thickness H2 is thicker than the thicknesses H1 and H3 (0.7 mm or more and 1.3 mm or less), because it is not necessary to conduct heat conduction so much and there is no problem even if the thermal resistance increases. . If it does in this way, the fall of the whole intensity | strength by the thickness of the whole printed circuit board 11 becoming extremely thin can be suppressed. In addition, since a standard material can be used as the insulating layer 11C constituting the printed circuit board 11 without using a special material, an increase in production cost can be suppressed.

Since the first member constituting the first heat radiation path HA and the second member constituting the second heat radiation path HB are thin films of copper or a copper-based alloy as a main component, which is a substance having a low thermal resistance, The heat dissipation efficiency in the heat dissipation path can be further increased. In addition, since the first conductor layer 15A and the second conductor layer 15B are stacked with three or more layers spaced apart from each other, heat can be radiated in both directions by both the through portion 16 and the conductor layer 15, The heat dissipation efficiency can be further increased.

In addition, by interposing the first heat transfer member 31 as in the semiconductor device 105, the contact thermal resistance between the second conductor layer 15B and the second through portion 16B and the heat radiating housing 13 is reduced. can do.

Furthermore, by joining the first diffusion layer 25 to the first conductor layer 15A1, it becomes possible to further spread the heat over a wide range, and the heat dissipation can be further enhanced.

7 shows the heat transfer mechanism of the semiconductor device 102 as an example. However, since the heat transfer is basically performed in the

other semiconductor devices

101, 103, 104, and 105 in the same manner as in FIG. Is omitted.

Next, the configuration and operation effect of the semiconductor device to which the configuration of this embodiment is applied will be described with reference to FIG.

Referring to FIG. 8, a semiconductor device 106 as a modified example (sixth example) of the present embodiment basically has the same configuration as semiconductor device 101 as the first example of FIG. Therefore, in FIG. 3, the same components as those in FIG. 2 are denoted by the same reference numerals, and the description thereof will not be repeated as long as the aspect is the same. In the semiconductor device 106 of FIG. 8, a plurality (two in FIG. 8) of electronic components 12 are bonded on one main surface 11a of the printed circuit board 11, and those electronic components 12 are formed on the other main surface 11b. A common heat dissipating housing 13 is fixed. A single semiconductor device 101 is formed for each region where the electronic component 12 is disposed, and a plurality of semiconductor devices 101 are arranged to constitute a semiconductor device 106. In the semiconductor device 106, a through hole 17 is formed in each region between a pair of adjacent semiconductor devices 101, and a screw 14 is provided in the through hole 17. The second heat dissipation path HC made of the second member, which is arranged in a region adjacent to the screw 14, is arranged so as to be shared by both the pair of semiconductor devices 101 adjacent to the screw 14.

Thus, if a plurality of semiconductor devices 101 share the same heat dissipation path, the semiconductor device 106 can be further miniaturized. Moreover, if it does in this way, since it becomes the structure by which the thermal radiation path | route is arrange | positioned for every semiconductor device 101, the thermal radiation efficiency can be improved further.

FIG. 8 shows an example in which two semiconductor devices 101 are combined as an example. However, the present invention is not limited to this. For example, a semiconductor device 106 in which two or more semiconductor devices 102 to 105 are combined may be used, or a semiconductor device 106 having a configuration in which the semiconductor devices 101 to 105 are appropriately combined is formed. May be.

Embodiment 2. FIG.
Hereinafter, an example of a specific structure of the semiconductor device 100 of the present embodiment will be described in detail with reference to FIGS.

Referring to FIG. 9, a semiconductor device 201 as a first example of the semiconductor device 100 of the present embodiment basically has the same configuration as the semiconductor device 101 of FIG. Therefore, in FIG. 9, the same components as those in FIG. 2 are denoted by the same reference numerals, and the description thereof will not be repeated as long as the aspect is the same. The semiconductor device 201 in FIG. 9 is fixed to the electronic component 12 and the second conductor layer 15B4 arranged on the most main surface 11a side of the printed board 11 among the plurality of second conductor layers 15B. The semiconductor device 101 is different from the semiconductor device 101 of FIG. 2 in that a heat radiating metal plate 26 as a first heat radiating metal plate is further provided.

The heat radiating sheet metal 26 is a flat plate member made of a metal material having high thermal conductivity such as copper. In FIG. 9, the heat dissipating metal plate 26 is attached to both the uppermost surface of the package constituting the electronic component 12 whose positions in the vertical direction are greatly different from each other and the uppermost surface of the second conductor layer 15 B 4. It is bent at the end of the second conductor layer 15B4 and the region directly above the electronic component 12, and has a hat-like cross-sectional shape. The bending angle of the heat dissipating metal plate 26 shown in FIG. 9 is an arbitrary angle at which the heat dissipating metal plate 26 can be fixed in close contact with the uppermost surfaces of both the electronic component 12 and the second conductor layer 15B4. Can do. Further, by using a single member in which a plurality of heat radiating metal plates 26 are combined, a configuration is used in which the single member can be fixed to the uppermost surfaces of both the electronic component 12 and the second conductor layer 15B4. Also good.

For example, in each example of the first embodiment, the heat generated by the electronic component 12 is natural from the surface of the package of the electronic component 12 to the surrounding air, except for the heat transmitted to the printed circuit board 11 and the heat radiating housing 13 side. Air cooled. However, in the present embodiment, a heat radiating metal plate 26 that is in contact with the uppermost surface of the electronic component 12 and the uppermost surface of the second conductor layer 15B4 is additionally disposed. The heat radiating metal plate 26 is fixed to the printed circuit board 11 with screws 14 immediately above the second conductor layer 15B4. As a result, part of the heat generated by the electronic component 12 is thermally conducted to the second conductor layer 15B4 side through the heat radiating metal plate 26, and is radiated from the second conductor layer 15B4 by the second heat radiation path of the second member. Heat can be transferred to the housing 13. Thus, since the heat dissipation path from the electronic component 12 to the second conductor layer 15B4 is formed by the heat dissipation metal plate 26, the heat dissipation efficiency can be further enhanced.

Referring to FIG. 10, a semiconductor device 202 as a second example of the semiconductor device 100 of the present embodiment basically has the same configuration as the semiconductor device 201 of FIG. Therefore, in FIG. 10, the same components as those in FIG. 9 are denoted by the same reference numerals, and the description thereof will not be repeated as long as the aspect is the same. The semiconductor device 202 of FIG. 10 is different from that of FIG. 9 in that at least one of the electronic component 12 and the second conductor layer 15B4 is fixed to the heat radiating metal plate 26 via the second heat transfer member 32. Different from the semiconductor device 201.

That is, the semiconductor device 202 of FIG. 10 includes the second region in the region between the heat radiating metal plate 26 and the uppermost surface of the electronic component 12 and the region between the heat radiating metal plate 26 and the second conductor layer 15B4 of the printed board 11. 9 is different from the semiconductor device 201 of FIG. 9 in that the heat transfer member 32 is disposed. In FIG. 10, the second heat transfer is applied both to the region between the heat dissipating metal plate 26 and the uppermost surface of the electronic component 12 and to the region between the heat dissipating metal plate 26 and the second conductor layer 15B4 of the printed board 11. A member 32 is disposed. The second heat transfer member 32 is fixed in close contact with both the heat radiating sheet metal 26 and the electronic component 12. The second heat transfer member 32 is fixed in close contact with both the heat radiating metal plate 26 and the second conductor layer 15B4. However, the second heat transfer member 32 may be disposed only in one of the region fixed to the electronic component 12 and the region fixed to the second conductor layer 15B4.

In FIG. 9, the uppermost surface portion of the electronic component 12 is constituted by a resin package, and electrical insulation between the electronic component mounted on the electronic component 12 and the metal heat radiating sheet metal 26 is ensured. However, for example, when an electrode is disposed on the uppermost surface portion of the electronic component 12, from the viewpoint of ensuring electrical insulation between the electronic component 12 and the heat radiating sheet metal 26, as shown in FIG. 12 and / or a region between the heat dissipating sheet metal 26 and the second conductor layer 15B4 of the printed board 11 so that the second heat transfer member 32 is sandwiched therebetween.

As the second heat transfer member 32, it is preferable to use, for example, a sheet formed by applying a heat-dissipating silicone resin. Thereby, both the electrical insulation of the area | region between the heat sink metal plate 26 and the electronic component 12, and / or the area | region between the heat sink metal plate 26 and the 2nd conductor layer 15B4 of the printed circuit board 11, and low contact thermal resistance are both. Can be realized.

Alternatively, although not shown, a member having a high thermal conductivity in the planar direction, such as a graphite sheet, which is installed on the entire surface of the heat radiating sheet metal 26 on the side facing the electronic component 12 is used as the second heat transfer member 32. Can also be used. In this case, the heat generated by the electronic component 12 is transmitted to the heat radiating metal plate 26 through the graphite sheet, and the route is transmitted through the graphite sheet to the region between the heat radiating metal plate 26 and the second conductor layer 15B4 of the printed board 11. These two paths can be transmitted to the second conductor layer 15B4. For this reason, the thermal resistance of the area | region between the electronic component 12 and 2nd conductor layer 15B4 can be reduced further, and the effect of the heat conduction by the heat sink metal plate 26 can be improved more.

Referring to FIG. 11, a semiconductor device 203 as a third example of the semiconductor device 100 of the present embodiment basically has the same configuration as the semiconductor device 201 of FIG. Therefore, in FIG. 11, the same components as those in FIG. 9 are denoted by the same reference numerals, and description thereof will not be repeated as long as the aspect is the same. The semiconductor device 203 of FIG. 11 is different from the electronic component 12 in that a heat dissipation fin 27 is provided on the surface of the heat radiating sheet metal 26 directly above the electronic component 12 (on the upper side in the drawing). 9 different from the semiconductor device 201 of FIG. In this way, in addition to the heat radiation path from the electronic component 12 to the second conductor layer 15B4 by the heat radiating sheet metal 26, a path for natural air cooling from the electronic component 12 through the heat radiating sheet metal 26 is provided. Therefore, the heat dissipation effect can be further enhanced as compared with the semiconductor device 201 of FIG.

Referring to FIG. 12, a semiconductor device 204 as a fourth example of the semiconductor device 100 of the present embodiment basically has the same configuration as the semiconductor device 106 of FIG. Therefore, in FIG. 11, the same components as those in FIG. 9 are denoted by the same reference numerals, and description thereof will not be repeated as long as the aspect is the same. The semiconductor device 204 in FIG. 12 is in contact with the respective electronic components 12 of the semiconductor device 101 arranged in a plurality (three in FIG. 12) as well as the semiconductor device 106 and the screw 14 disposed between the semiconductor devices 101. The semiconductor device 106 is different from the semiconductor device 106 in that a single large heat radiating metal plate 26 is disposed so as to straddle each of the second conductor layers 15B4. As in FIGS. 9 to 11, the heat radiating metal plate 26 includes the electronic component 12 and the second conductor layer disposed closest to one main surface 11a of the printed circuit board 11 among the plurality of second conductor layers 15B. It is fixed to 15B4. However, instead of using a single large heat radiating metal plate 26 as shown in FIG. 12, a separate heat radiating metal plate 26 may be provided for each of the plurality of semiconductor devices 101.

In the semiconductor device 204 including the plurality of electronic components 12, like the semiconductor device 106, the adjacent semiconductor devices 101 share the same heat dissipation path, so that the semiconductor device 204 can be further downsized. . Note that the thermal resistance of the heat radiating metal plate 26 can be further reduced by making the heat radiating metal plate 26 thicker than the configuration of FIG. 12 or by increasing the area where the heat radiating metal plate 26 and the second conductor layer 15B4 are fixed. it can.

Note that the second heat transfer member 32 of FIG. 10 and / or the fins 27 of FIG. 11 may be added to the semiconductor device 204 of FIG. Also in this embodiment, the configuration of the conductor layer 15 as shown in FIGS. 3 to 5 may be employed.

Next, although partially overlapping with the above, the function and effect of this embodiment will be described. The present embodiment provides the following operational effects in addition to the operational effects of the first embodiment.

In this embodiment, in any of the examples, as the heat path generated by the electronic component 12 by fixing the heat radiating metal plate 26, in addition to the components of the first embodiment, a path that transmits the heat radiating metal plate 26 is used. Can be added. For this reason, the presence of a heat dissipation path from the electronic component 12 to the second conductor layer 15B4 can reduce the thermal resistance between the electronic component 12 and the heat dissipation housing 13 and improve the heat dissipation performance of the semiconductor device. .

Embodiment 3 FIG.
Hereinafter, an example of a specific structure of the semiconductor device 100 of the present embodiment will be described in detail with reference to FIGS.

Referring to FIG. 13, a semiconductor device 301 as a first example of the semiconductor device 100 of the present embodiment basically has the same configuration as the semiconductor device 201 of FIG. For this reason, in FIG. 9, the same components as those in FIG. The semiconductor device 301 of FIG. 13 includes a heat dissipating metal plate 28 as a flat plate-like second heat dissipating metal plate fixed to the electronic component 12 and one main surface of the printed circuit board 11 among a plurality of second conductor layers 15B. The semiconductor device 201 is different from the semiconductor device 201 of FIG. 9 in that the second conductor layer 15B4 disposed on the 11a side and the spacer 29 disposed between the heat radiating metal plates 28 are further provided.

Here, the heat radiating sheet metal 28 is flat. The heat radiating sheet metal 28 according to the present embodiment is similar to the heat radiating sheet metal 26 shown in FIG. 13 between the top surface of the electronic component 12 and the top surface of the second conductor layer 15B4. This means that the surface is not bent in consideration of the step in the vertical direction, and the surface is almost flat as a whole. The heat radiating sheet metal 28 extends flatly from the uppermost surface of the electronic component 12 to the uppermost surface of the second conductor layer 15B4 on the left and right sides of FIG.

In the present embodiment, since the heat radiating metal plate 28 is not bent as in the second embodiment, a gap is formed between the heat radiating metal plate 28 and the second conductor layer 15B4 directly above the second conductor layer 15B4. Arise. A member that fills this gap is a spacer 29. By disposing the spacer 29, the heat radiating metal plate 28 is placed on the uppermost surfaces of the spacer 29 and the electronic component 12 so as to bridge them.

The spacer 29 is a cylindrical or rectangular parallelepiped member, for example, and is preferably made of a metal material having high thermal conductivity. The spacer 29 may be fixed to the region between the second conductor layer 15B4 and the heat radiating metal plate 28 by the screw 14. In this case, since the screw 14 penetrates the spacer 29, a through hole is formed in the central portion of the spacer 29 in plan view.

Referring to FIG. 14, a semiconductor device 302 as a second example of the semiconductor device 100 of the present embodiment basically has the same configuration as the semiconductor device 301 of FIG. For this reason, in FIG. 14, the same reference numerals are given to the same components as those in FIG. The semiconductor device 302 of FIG. 14 is different from the semiconductor device 301 of FIG. 13 in that a plate spring 33 is fixed to the heat radiating metal plate 28 by, for example, screws 14. The leaf spring 33 presses the electronic component 12 downward from the upper side of the heat radiating metal plate 28.

13 and 14 show only the regions of the

single semiconductor devices

301 and 302, the first embodiment (FIG. 8) and the second embodiment (FIG. 12) also in this embodiment. Similarly, a configuration in which a plurality of electronic components 12 are included and the second heat dissipation path is shared among them may be employed. Also in the present embodiment, the configuration of the conductor layer 15 as shown in FIGS. 3 to 5, the fins 27 and the second heat transfer member 32 as shown in FIGS. 10 to 11 may be employed.

Next, the function and effect of this embodiment will be described. The present embodiment provides the following operational effects in addition to the operational effects of the first embodiment.

In the present embodiment, since the heat radiating sheet metal 28 is flat, it is not necessary to perform bending to bend it like the heat radiating sheet metal 26 of the second embodiment, thereby reducing the processing cost. Can do. Since a distance is generated between the flat heat dissipating metal plate 28 and the second conductor layer 15B4 immediately below the flat heat dissipating metal plate 28, the thermal resistance between the heat dissipating metal plate 28 and the second conductor layer 15B4 is larger than that of the second embodiment. There are concerns. However, by increasing the cross-sectional area of the spacer 29 sandwiched between the heat radiating metal plate 28 and the second conductor layer 15B4 in plan view from above in FIG. The resistance can be set to be equal to or lower than the thermal resistance of the heat radiating sheet metal 26 of the second embodiment.

When the flat plate-like heat radiating metal plate 28 is used, the printed circuit board 11 is not only fixed to the heat radiating housing 13 by the screws 14 but also directed downward from the upper side of FIG. By being pressed, it is fixed to the heat radiating housing 13. For this reason, when attaching the printed circuit board 11 to the heat radiating housing 13, the thickness of the insulating member 24 suppresses the deformation that causes the printed circuit board 11 to warp upward in the drawing and the damage caused by the deformation. Can do. Further, when the heat radiating metal plate 28 presses the electronic component 12 downward, the insulating member 24 disposed between the printed board 11 and the heat radiating housing 13 can be crushed so as to be thinner. Thereby, the thermal resistance via the insulating member 24 between the printed circuit board 11 and the heat dissipation housing 13 can be reduced.

Further, the leaf spring 33 installed as shown in FIG. 14 presses the electronic component 12 downward from the upper side of the heat radiating sheet metal 28, thereby pressing downward on the printed circuit board 11 just below the electronic component 12. The pressure becomes larger. For this reason, deformation and breakage of the printed circuit board 11 can be more reliably suppressed, and thermal resistance via the insulating member 24 between the printed circuit board 11 and the heat radiating housing 13 can be further reduced. it can.

The force for pressing the electronic component 12 downward increases as the vertical dimension of the spacer 29 in FIG. 13 is reduced (that is, as the height is lowered), and the vertical dimension of the spacer 29 in FIG. (That is, if the height is increased), it becomes smaller. By utilizing this fact, the magnitude of the pressing force applied to the electronic component 12 by the heat radiating sheet metal 28 can be adjusted.

Embodiment 4 FIG.
Hereinafter, an example of a specific structure of the semiconductor device 100 of the present embodiment will be described in detail with reference to FIGS.

FIG. 15 shows a heat transfer mode from the electronic component 12 in the semiconductor device 401 as an example of the semiconductor device 100 according to the present embodiment by cutting out a part of the electronic component 12 and the printed board 11. . Referring to FIG. 15, the semiconductor device 401 of the present embodiment has basically the same configuration as the semiconductor device 101 of FIG. Therefore, in FIG. 15, the same components as those in FIG. The semiconductor device 401 in FIG. 15 is different from the semiconductor device 101 in FIG. 2 in the number of first conductor layers 15A and the heat transfer mechanism from the first conductor layer 15A to the second conductor layer 15B.

Specifically, in the semiconductor device 401 of FIG. 15, the first conductor layer 15A similar to the other examples is added to the first conductor layers 15A1, 15A2, 15A3, and 15A4, as well as the first conductor layers 15A5 and 15A5. A total of 6 layers with 15A6. The second conductor layer 15B has four layers of second conductor layers 15B1, 15B2, 15B3, and 15B4 as in the other examples. Thus, in the present embodiment, the printed circuit board includes five or more first conductor layers 15A. In this respect, the semiconductor device 401 is different from the semiconductor device 101 in which the first conductor layer 15A and the second conductor layer 15B are both four layers.

In the first conductor layer 15A in FIG. 15, the first conductor layers 15A1, 15A2, 15A3, and 15A4 are laminated in this order from the lower layer to the upper layer in the same manner as in the above examples. On the other hand, the first conductor layer 15A5 and the first conductor layer 15A6 are sandwiched between the first conductor layer 15A2 and the first conductor layer 15A3, and the first conductor layer 15A5 is the first conductor layer 15A5. Is laminated below the conductor layer 15A6. However, the present invention is not limited thereto, and the first conductor layers 15A5 and 15A6 may be disposed, for example, between the first conductor layer 15A3 and the first conductor layer 15A4. These six first conductor layers 15A1 to 15A6 are laminated with a space therebetween.

In the present embodiment, similarly to the other embodiments, the first conductor layer 15A has a first surface on one or the other

main surface

11a, 11b based on the distance between the first conductor layers 15A2, 15A3 in the first conductor layer 15A. The conductor layers 15A1 and 15A4 and the first conductor layers 15A2 and 15A3 adjacent to the conductor layers 15A1 and 15A4 are arranged such that the distance therebetween becomes smaller. However, in the present embodiment, the first conductor layer 15A5 and the first conductor layer 15A6 are sandwiched between the first conductor layer 15A2 and the first conductor layer 15A3. For this reason, the first conductor layer on one or the other

main surfaces

11a, 11b is determined based on the distance between a pair of adjacent first conductor layers 15A5 and the first conductor layer 15A6 inside the printed circuit board 11, for example. The distance between 15A1 and 15A4 and the first conductor layers 15A2 and 15A3 adjacent thereto is larger. However, the present invention is not limited to such a mode, and in the present embodiment, the distance between the first conductor layer 15A1 and the first conductor layer 15A2 is larger than the distance between the first conductor layer 15A5 and the first conductor layer 15A6. May be smaller.

Also in the present embodiment, each of the first conductor layers 15A1, 15A2, 15A3, and 15A4 is formed as the same layer as each of the second conductor layers 15B1, 15B2, 15B3, and 15B4.

The first conductor layers 15A1, 15A5, 15A6, and 15A4 are formed so as to extend over a wide range of one main surface 11a and the other main surface 11b from a region overlapping the electronic component 12 in a plan view to a region outside thereof. ing. For this reason, the first conductor layers 15A1 and 15A4 and the second conductor layers 15B1 and 15B4 that are spaced apart from each other are spread only in the outermost edge of the printed circuit board 11 and a relatively narrow area adjacent thereto. Is formed. On the other hand, the first conductor layers 15A2 and 15A3 are formed so as to extend only in a part of the region immediately below the electronic component 12, that is, in a relatively central portion of the electronic component 12 in plan view, at least in FIG. Yes. For this reason, the second conductor layers 15B2 and 15B3 in FIG. 2 are arranged so as to extend to the inner region in plan view as compared with the second conductor layers 15B1 and 15B4. It is arranged to overlap.

As a result, in FIG. 15, for example, the first conductor layers 15A1, 15A5, 15A6, and 15A4 and the second conductor layers 15B2 and 15B3 partially overlap each other and are insulated between them. The layer 11C is interposed.

In the present embodiment, among the five or more first conductor layers 15A, the first conductor layer 15A inside the printed circuit board 11 (not exposed on the surface) and the first conductor layer 15A inside (not exposed on the surface). The first heat transfer via 15AA is connected to the first conductor layer 15A other than the first conductor layer 15A. That is, as shown in FIG. 15, among the six first conductor layers 15A, the right end portion of the first conductor layer 15A6 inside the printed circuit board 11 (not exposed on the surface) and the other first conductors other than the first conductor layer 15A. The first heat transfer via 15AA extending in the vertical direction in the drawing in the region outside the electronic component 12 in plan view, with the right end of the uppermost first conductor layer 15A4 being one of the layers 15A Connected by. Further, as shown in FIG. 15, among the six first conductor layers 15A, the right end portion of the first conductor layer 15A5 inside the printed circuit board 11 (not exposed to the surface) and the other first conductors other than the first conductor layer 15A. The first heat transfer via 15AA extending in the vertical direction in the drawing in the region outside the electronic component 12 in plan view, with the right end of the lowermost first conductor layer 15A1 being one of the layers 15A Connected by. However, the first heat transfer via 15AA is not limited thereto, and may be a mode in which two first conductor layers 15A arranged at intervals in the printed circuit board 11 are connected to each other.

In the present embodiment, among the plurality of (four layers here) second conductor layers 15B, the second conductor layer 15B inside the printed circuit board 11 (not exposed to the surface) and the inside (on the surface) The second heat transfer via 15BB is connected to the second conductor layer 15B other than the second conductor layer 15B (not exposed). That is, as shown in FIG. 15, among the four second conductor layers 15B, the left end portion of the second conductor layer 15B2 inside the printed circuit board 11 (not exposed to the surface) and the other second conductors other than that. The second conductor layer 15B3, which is one of the layers 15B, is connected to the left end portion of the second conductor layer 15B3 by a second heat transfer via 15BB extending in the vertical direction in the drawing in a region overlapping the electronic component 12 in plan view. Yes. However, the second heat transfer via 15BB is not limited thereto, and for example, the second conductor layer 15B formed on one or the other main surface of the printed circuit board 11 and the second conductor disposed inside the printed circuit board 11. It may be an aspect in which the layer 15B is connected.

The first heat transfer via 15AA and the second heat transfer via 15BB are connected to each other by a conductor, like the first through portion 16A and the second through portion 16B. However, the first heat transfer via 15AA and the second heat transfer via 15BB do not penetrate through the entire printed circuit board 11 and have the first or second conductor layer inside the printed circuit board 11 as one end. , Different from the first through portion 16A and the second through portion 16B. The first heat transfer via 15AA and the second heat transfer via 15BB may be configured so that the entire interior is filled with a conductor, and only the outer wall surface extending in the vertical direction in the figure is covered with the conductor. The inside may be filled with an insulating material such as resin.

As shown in FIG. 15, the first heat transfer via 15AA has a mode of penetrating the second conductor layer 15B3 disposed between the first conductor layer 15A4 and the first conductor layer 15A6. . FIG. 16 is a schematic perspective view of the portion where the first heat transfer via 15AA penetrates the second conductor layer 15B3 in FIG. 15 as seen from above. Referring to FIG. 16, the second conductor layer 15B3 has an opening 15PH as a hole formed so as to penetrate the second conductor layer 15B3 in the vertical direction in the figure, and the second conductor layer 15B3 is formed so as to penetrate the opening 15PH. One heat transfer via 15AA extends in the vertical direction in the figure. The opening 15PH and the first heat transfer via 15PH are spaced from each other so as not to contact each other. This is because the first conductor layers 15A4 and 15A6 and the second conductor layer 15B3 need to be electrically insulated. The interval varies depending on the voltage handled by the semiconductor device 401, but is preferably 0.4 mm or more, for example.

Next, the operational effects of the present embodiment will be described while explaining the heat transfer mode of the semiconductor device 401 with reference to FIGS. 15 and 16.

Referring again to FIG. 15, in the present embodiment as well, the first heat dissipation path HA indicated by a solid line in the drawing and the second heat dissipation path HB indicated by a dotted line in the figure are similar to those of the other embodiments. Heat is transferred from the upper layer to the lower layer. However, in this case, for example, a temperature difference may occur between the right end portion of the first conductor layer 15A4 and the right end portion of the first conductor layer 15A6 due to a difference in thermal conductivity. In this case, the amount of heat conduction from the lower temperature layer of the two first conductor layers 15A to the second conductor layer 15B is reduced, and the efficiency of heat conduction is reduced.

Therefore, the first heat transfer via 15AA is provided between the right end of the first conductor layer 15A4 and the right end of the first conductor layer 15A6 as in the present embodiment. As a result, the first heat transfer via 15AA is used as the third heat dissipation path HD indicated by the chain line arrow in the figure, and heat is radiated between the first conductor layer 15A4 and the first conductor layer 15A6 in the vertical direction of the figure. Therefore, the temperature difference between the first conductor layer 15A4 and the first conductor layer 15A6 can be reduced, and the temperature distribution in the first conductor layer 15A can be made uniform. As the temperature distribution of the first conductor layer 15A is made uniform, the heat conduction from there to the second conductor layer 15B3 is uniformly shown from the upper side and the lower side as shown in the fourth heat radiation path HE. To be made. Thereby, heat can be efficiently conducted from the first conductor layer 15A to the second conductor layer 15B as compared with the case where heat is unevenly distributed only on either the upper side or the lower side of the second conductor layer 15B3. it can.

Referring to FIG. 16 again, in the vicinity of the opening 15PH, the heat is transferred through the third heat radiation path HD between the first conductor layer 15A4 and the first conductor layer 15A6, so that the first heat transfer is performed. The via 15AA generates heat. The generated heat is transmitted from the first heat transfer via 15AA to the second conductor layer 15B3 through the opening 15PH as shown in the fourth heat dissipation path HE. Thereby, the efficiency of heat transfer between the first member and the second member can be increased.

In FIG. 15, the first heat transfer via 15AA that connects the first conductor layer 15A4 and the first conductor layer 15A6, and the first conductor layer 15A1 and the first conductor layer 15A5 that are in contact with each other. These heat transfer vias 15AA are arranged separately. However, a structure in which these are connected without being divided may be used.

In the above, the effect of the first heat transfer via 15AA between the first conductor layer 15A4 and the first conductor layer 15A6 has been described. However, the first heat transfer via 15AA between the first conductor layer 15A1 and the first conductor layer 15A5 in FIG. 15 and the second conductor layer 15B2 and the second conductor layer 15B3 in FIG. The second heat transfer via 15BB basically has the same effects as described above.

In the above, an example having six first conductor layers 15A has been described. However, the number of first conductor layers 15A may be seven or more. Further, it is not always necessary to provide both the first heat transfer via 15AA and the second heat transfer via 15BB, and only one of them may be provided. The first heat transfer via 15AA and the second heat transfer via 15BB described above should not be arranged only on the right side of the electronic component 12 in FIG. 15 but may be arranged on the left side of the electronic component 12 as well. The electronic component 12 may be arranged around the left and right as well as the front and rear.

The features described in the embodiments described above (each example included in the embodiments) may be applied so as to be appropriately combined within a technically consistent range.

The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

11 printed circuit board, 11a one main surface, 11b other main surface, 11C insulating layer, 12 electronic parts, 13 heat dissipation housing, 14 screws, 15 conductor layers, 15A, 15A1, 15A2, 15A3, 15A4, 15A5, 15A6 First conductor layer, 15AA first heat transfer via, 15B, 15B1, 15B2, 15B3, 15B4 second conductor layer, 15BB second heat transfer via, 15PH opening, 16 penetration, 16A first penetration Part, 16B second penetrating part, 17 through hole, 21 resist layer, 22 electrode, 23 joining member, 24 insulating member, 25 heat diffusing plate, 26 heat radiating sheet metal, 27 fin, 28 heat radiating sheet metal, 29 spacer, 31 first Heat transfer member, 32 second heat transfer member, 33 leaf spring, 100, 101, 102, 103 104, 105, 106, 201, 202, 203, 204, 301, 302, 401 Semiconductor device, HA first heat radiation path, HB, HC second heat radiation path, HD third heat radiation path, HE fourth heat radiation Route.

Claims

A printed circuit board,
An electronic component joined to one main surface side of the printed circuit board;
A radiator fixed to the other main surface side opposite to the one main surface of the printed circuit board;
The printed circuit board includes an insulating layer, and a conductor layer that extends along the main surface of the insulating layer and is laminated in plural from the electronic component side to the radiator side via a part of the insulating layer,
Each of the plurality of conductor layers is arranged to be electrically insulated from the plurality of first conductor layers electrically connected to the electronic component and spaced apart from the plurality of first conductor layers. A plurality of second conductor layers,
A first through portion connected to each of the plurality of first conductor layers and extending from the one main surface of the printed circuit board to the other main surface;
A second penetrating portion connected to each of the plurality of second conductor layers and extending from the one main surface of the printed circuit board to the other main surface;
The semiconductor device, wherein the first conductor layer and the second conductor layer at least partially overlap each other in a planar manner or are spaced from each other in a direction along the one main surface.
The plurality of first and second conductor layers are any one selected from the group consisting of a copper thin film, a thin film of an alloy containing copper as a main component, and a thin film of an alloy containing silver as a main component. The semiconductor device according to claim 1, wherein three or more layers are stacked with a gap therebetween.
3. The semiconductor device according to claim 1, wherein the plurality of first conductor layers and the plurality of second conductor layers include regions that overlap each other in a plane around the electronic component.
A fixing member provided inside the second penetrating portion and fixing the printed circuit board to the radiator;
The semiconductor device according to any one of claims 1 to 3, further comprising an insulating member disposed between the other main surface of the printed circuit board and the radiator.
5. The semiconductor according to claim 4, further comprising a first heat transfer member in at least one of a region between the printed circuit board and the fixing member and a region between the printed circuit board and the radiator. apparatus.
6. The heat diffusion plate according to claim 1, further comprising a heat diffusion plate joined to the first conductor layer disposed on the most other main surface side among the plurality of first conductor layers. Semiconductor device.
The first heat dissipating sheet metal fixed to the electronic component and the second conductor layer disposed on the most main surface side of the plurality of second conductor layers is further provided. 7. The semiconductor device according to claim 6.
The at least one of the electronic component and the second conductor layer on the most main surface side is fixed to the first heat radiating sheet metal via a second heat transfer member. Semiconductor device.
A flat plate-like second heat dissipating metal plate fixed to the electronic component;
The spacer further disposed between the second conductor layer disposed on the most main surface side of the plurality of second conductor layers and the second heat dissipating sheet metal. 7. The semiconductor device according to any one of items 1 to 6.
The printed circuit board includes five or more first conductor layers,
Of the five or more first conductor layers, the first conductor layer inside the printed circuit board is connected to the first conductor layer other than the first conductor layer inside. A first heat transfer via;
Of the plurality of second conductor layers, the second conductor layer inside the printed circuit board is connected to the second conductor layer other than the second conductor layer inside the second printed circuit board. The semiconductor device according to any one of claims 1 to 9, further comprising at least one of a heat transfer via.